*DIODES_INC_SPICE_MODEL ZXGD3111 version1 
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=20May2016
*VERSION=1


*PIN ORDER 1:GND  2:GND   3:Vcc  4:GATE   5:PGND   6:PGND  7:DRAIN
.SUBCKT ZXGD3111 1 2 3 4 5 6 7
Gin 12 11 7 2 .1
D1 10 11 DMOD
D2 10 12 DMOD
Rset 11 12 33.3k TC2=.1m
Cset 11 12 1p
Rgnd 12 2 1m
Sw 14 2 12 11 SMOD
Rbias 3 14 1k
Cbias 14 2 .8n
Dz 2 14 DMOD1
Rshort1 2 1 10m
Rshort2 5 6 10m
Q1 3 14 31 npns
Q2 3 31 4 npnl
Q3 2 31 4 pnpl
Q4 2 14 31 pnps

.MODEL DMOD D(BV=20)
.MODEL DMOD1 D(BV=12)
.MODEL SMOD VSWITCH(VOFF=10.5 VON=9.5 ROFF=1meg RON=.5)


.MODEL npns NPN IS=6E-16 NF=1.005 BF=260 IKF=0.007 VAF=51 ISE=2E-16 NE=1.35 
+ BR=25 ISC=1e-15 NC=1.2 RB=200 RE=3 RC=0.6 CJC=0.24E-12 MJC=0.33 VJC=0.7
+ CJE=1.02E-12 MJE=0.3 VJE=0.7
+ TF=1E-9 TR=30e-9
.MODEL npnl NPN IS=3E-13 NF=1.005 BF=260 IKF=0.7 VAF=51 ISE=1E-14 NE=1.45 
+ BR=25 ISC=1e-13 NC=1.2 RB=2 RE=0.05 RC=0.1 CJC=27E-12 MJC=0.4 VJC=0.7
+ CJE=114E-12 MJE=0.35 VJE=0.7
+ TF=1E-9 TR=30e-9 
.MODEL pnps PNP IS=5E-16 NF=1 BF=350 IKF=0.006 VAF=51 ISE=5E-16 NE=1.35 
+ BR=25 ISC=1e-15 NC=1.2 RB=500 RE=5 RC=.6 CJC=0.54E-12 MJC=0.32 VJC=0.5
+ CJE=1.05E-12 MJE=0.2 VJE=0.6
+ TF=10E-9 TR=30e-9 
.MODEL pnpl PNP IS=2.2E-13 NF=1 BF=350 IKF=0.6 VAF=51 ISE=1E-14 NE=1.45 
+ BR=25 ISC=1e-13 NC=1.2 RB=3 RE=0.05 RC=0.1 CJC=35E-12 MJC=0.4 VJC=0.6
+ CJE=125E-12 MJE=0.5 VJE=1
+ TF=10E-9 TR=30e-9 


.ENDS

*                (c)  2016 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*DIODES_INC_SPICE_MODEL ZXGD3112 version1 
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=20May2016
*VERSION=1


*PIN ORDER 1:GND  2:GND   3:Vcc  4:GATE   5:PGND   6:PGND  7:DRAIN
.SUBCKT ZXGD3112 1 2 3 4 5 6 7
Gin 12 11 7 2 .1
D1 10 11 DMOD
D2 10 12 DMOD
Rset 11 12 33.3k TC2=.1m
Cset 11 12 1p
Rgnd 12 2 1m
Sw 14 2 12 11 SMOD
Rbias 3 14 1k
Cbias 14 2 .8n
Dz 2 14 DMOD1
Rshort1 2 1 10m
Rshort2 5 6 10m
Q1 3 14 31 npns
Q2 3 31 4 npnl
Q3 2 31 4 pnpl
Q4 2 14 31 pnps

.MODEL DMOD D(BV=20)
.MODEL DMOD1 D(BV=12)
.MODEL SMOD VSWITCH(VOFF=10.5 VON=9.5 ROFF=1meg RON=.5)


.MODEL npns NPN IS=6E-16 NF=1.005 BF=260 IKF=0.007 VAF=51 ISE=2E-16 NE=1.35 
+ BR=25 ISC=1e-15 NC=1.2 RB=200 RE=3 RC=0.6 CJC=0.24E-12 MJC=0.33 VJC=0.7
+ CJE=1.02E-12 MJE=0.3 VJE=0.7
+ TF=1E-9 TR=30e-9
.MODEL npnl NPN IS=3E-13 NF=1.005 BF=260 IKF=0.7 VAF=51 ISE=1E-14 NE=1.45 
+ BR=25 ISC=1e-13 NC=1.2 RB=2 RE=0.05 RC=0.1 CJC=27E-12 MJC=0.4 VJC=0.7
+ CJE=114E-12 MJE=0.35 VJE=0.7
+ TF=1E-9 TR=30e-9 
.MODEL pnps PNP IS=5E-16 NF=1 BF=350 IKF=0.006 VAF=51 ISE=5E-16 NE=1.35 
+ BR=25 ISC=1e-15 NC=1.2 RB=500 RE=5 RC=.6 CJC=0.54E-12 MJC=0.32 VJC=0.5
+ CJE=1.05E-12 MJE=0.2 VJE=0.6
+ TF=10E-9 TR=30e-9 
.MODEL pnpl PNP IS=2.2E-13 NF=1 BF=350 IKF=0.6 VAF=51 ISE=1E-14 NE=1.45 
+ BR=25 ISC=1e-13 NC=1.2 RB=3 RE=0.05 RC=0.1 CJC=35E-12 MJC=0.4 VJC=0.6
+ CJE=125E-12 MJE=0.5 VJE=1
+ TF=10E-9 TR=30e-9 


.ENDS

*                (c)  2016 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*DIODES_INC_SPICE_MODEL ZXGD3108 version1 
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=20May2016
*VERSION=1

.SUBCKT ZXGD3108 1 2 3 4 5 6 7 8
Gin 12 11 8 2 .1
D1 10 11 DMOD
D2 10 12 DMOD
Rset 11 12 33.3k TC2=.1m
Cset 11 12 1p
Rgnd 12 2 1m
Sw 14 2 12 11 SMOD
Rbias 5 14 1k
Cbias 14 2 .8n
Rshort1 2 3 10m
Rshort2 5 6 10m
Q1 5 14 31 npns
Q2 5 31 4 npnl
Q3 2 31 4 pnpl
Q4 2 14 31 pnps

.MODEL DMOD D(BV=20)
.MODEL SMOD VSWITCH(VOFF=10.5 VON=9.5 ROFF=1meg RON=.5)


.MODEL npns NPN IS=6E-16 NF=1.005 BF=260 IKF=0.007 VAF=51 ISE=2E-16 NE=1.35 
+ BR=25 ISC=1e-15 NC=1.2 RB=200 RE=3 RC=0.6 CJC=0.24E-12 MJC=0.33 VJC=0.7
+ CJE=1.02E-12 MJE=0.3 VJE=0.7
+ TF=1E-9 TR=30e-9
.MODEL npnl NPN IS=3E-13 NF=1.005 BF=260 IKF=0.7 VAF=51 ISE=1E-14 NE=1.45 
+ BR=25 ISC=1e-13 NC=1.2 RB=2 RE=0.05 RC=0.1 CJC=27E-12 MJC=0.4 VJC=0.7
+ CJE=114E-12 MJE=0.35 VJE=0.7
+ TF=1E-9 TR=30e-9 
.MODEL pnps PNP IS=5E-16 NF=1 BF=350 IKF=0.006 VAF=51 ISE=5E-16 NE=1.35 
+ BR=25 ISC=1e-15 NC=1.2 RB=500 RE=5 RC=.6 CJC=0.54E-12 MJC=0.32 VJC=0.5
+ CJE=1.05E-12 MJE=0.2 VJE=0.6
+ TF=10E-9 TR=30e-9 
.MODEL pnpl PNP IS=2.2E-13 NF=1 BF=350 IKF=0.6 VAF=51 ISE=1E-14 NE=1.45 
+ BR=25 ISC=1e-13 NC=1.2 RB=3 RE=0.05 RC=0.1 CJC=35E-12 MJC=0.4 VJC=0.6
+ CJE=125E-12 MJE=0.5 VJE=1
+ TF=10E-9 TR=30e-9 


.ENDS

*                (c)  2016 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*DIODES_INC_SPICE_MODEL ZXGD3105
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=29Nov2012
*VERSION=1

.SUBCKT ZXGD3105 1 2 3 4 5 6 7 8
L1 1 11 2n
L2 7 12 2n
Din 3 4 DMOD1
Rin 3 12 30000
*Dx 3 5 DMOD
D1 3 11 DMOD
D2 12 3 DMOD
Q1 5 3 12 NMOD

G1 11 13 VALUE={1.38e-11*(exp((V(30)-V(13))/.0026))}
G2 14 12 VALUE={1.38e-11*(exp((V(14)-V(30))/.0026))}
R01 11 13 1000000
R02 14 12 1000000
R03 13 8 2
R04 14 8 1.2
D3 8 11 DMOD
D4 12 8 DMOD
R1 5 30 10
C2 30 12 8p
CS 30 8 2p
.MODEL DMOD D(IS=8n BV=30) 
.MODEL DMOD1 D(IS=200E-15 RS=59.7m
+ CJO=.6p  VJ=.42 M=0.36 N=1.35 TT=7n)
.MODEL NMOD NPN(IS=1.25E-15 BF=11 NF=1 ISE=6E-16 NE=1.15 CJC=2.56E-12 VJC=.72 MJC=.21 CJE=3.72E-12 VJE=.72 MJE=.24 TR=.1E-9)

.ENDS


*                (c)  2012 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*DIODES-BCD AP2127 ADJ Version Spice Model v1.0
*
*NOTE: This is a simplified model not all features are modeled.
*
.subckt AP2127_ADJ  1 2 3 4 5
* NODES: VIN GND EN ADJ VOUT
M1 5 9 1 1 MOD1 L=1u W=1000u
R1 6 1 1E6
C1 9 1 20E-12
C2 5 9 20E-12
G1 2 20 4 12 6E-6
G2 2 22 12 4 6E-6
F1 22 2 VS 1
F2 1 6 VS 20
G3 6 1 22 2 100E-6
R3 20 23 10E3
VS 23 2 0
C3 20 2 310E-15  
C4 20 5 10E-12
R2 22 2 5E6
R5 22 24 400E3
C5 24 2 20E-12
D1 5 1 Dmod1
R6 3 13 20E4
R7 3 2 3E6
C6 13 2 4E-6
R8 1 5 50E6
R9 6 9 20E3
R10 2 12 Rmod1 1 
R40 5 2 5E4
S1 1 6 13 2 Smod1
I1 2 12 0.8
.MODEL MOD1 PMOS (VTO=-0.82 RS=0.2 RD=0.2 IS=1E-15 KP=0.73 KF=2e-19 AF=1.22)
.MODEL Dmod1 D (IS=1E-13 RS=0.5 N=1)
.MODEL Dmod2 D (IS=1E-13 RS=0.1 N=0.5)
.MODEL Rmod1 RES (TC1=-3E-5 TC2=-1E-7)
.MODEL Smod1 VSWITCH RON=1E-3 ROFF=10E6  VON=0.5 VOFF=1.2 
.ENDS AP2127_ADJ
*


*TITLE=AP8803 MACROMODEL
*ORIGIN=DZSL_AG_GS
*SIMULATOR=DIODES, SIMETRIX
*DATE=6th Jan 2012
*VERSION=1
*PIN_ORDER   1:SW, 2:GND, 3:CTRL, 4:SET, 5:VIN
*
* SIMetrix macromodel for AL8803 Buck LED Driver

* based on work by Tim Wilson

.subckt AL8803_SIMETRIX 10  26  13   20  18
* pins-------------------1---2---3----4---5 
*names                  SW  GND CTRL SET VIN

* Vref Generator *
E2         19 26 18 26 1
B111       14 26  V=Min(V(19), 1.25)    
R3         14 19  20k  
R4         14 13  200k  

* CTRL input filter *
* Faster (but unrealistic) startup can be
* achieved by changing initial conditions
* on C1 to C3 to match the settled value.
* eg 1.25V if CTRL is floating in the application
* or equal to the external DC voltage applied to CTRL
* or equal to the average value of the PWM signal
* applied to CTRL
C1         15 26  5p IC=0 
C2         16 26  5p IC=0 
C3         17 26  5p IC=0 
R5         13 15  7.7meg  
R6         15 16  7.7meg  
R7         16 17  7.7meg  
E7         12 26 17 26 1

* CTRL lockout with hysteresis *
R8         12 adj_lockout  1000  
I1         12 adj_lockout DC 50uA  
C7         adj_lockout 12  1p IC=0 
X_S4       adj_lockout 26 adj_lockout 12 AP_S4 
X_S5       adj_lockout 26 23 26 AP_S5 

* UV lockout *
X_S6       18 26 23 26 AP_S6 

* Main Function *
G2         26 8 18 20 1m
C4         26 20  20p  
R9         26 9  3.832k  
R10        9 8  10.859k  
X_S7       23 26 9 26 AP_S7 
G3         21 26 8 12 1000m
R11        26 21  1meg  
V3         24 26 700mV
D8         24 21 Dclamp 
V4         22 26 6V
D9         21 22 Dclamp 

* Comp Delay (Asymmetric) *
E4         25 26 21 26 1
C6         26 23  25p  
R13        23 25  2k  

* Output NMOS *
X_S8       23 26 11 26 AP_S8 
R12        11 10  0.4  
C5         26 10  100p  

* Supply Current *
X_S3       adj_lockout 26 4 7 AP_S3 
R1         26 7  1.58k 
R2         26 4  67k  
X_S2       18 26 6 4 AP_S2 
V1         5 26 1V
X_F1       6 5 18 26 AP_F1 


* Timestep Control *
* Only purpose is to force timestep without using a control card *
V99        99 26 DC 0 AC 0 PULSE 0 0 0 100n 100n 500n 1u
R99        99 26 100

.model Dzener D Is=1e-8 N=10 bv=1.245 ibv=1e-12 Cjo=.1e-12 Rs=.1 TBV1=4e-5 nbv=.01 
.model Dclamp  D Is=2.682n N=1.836 Rs=.5664 Ikf=44.17m Cjo=4p M=.3333 Vj=.5

.subckt AP_F1 1 2 3 4  
F_F1       3 4 VF_F1 1
VF_F1      1 2 0V
.ends AP_F1

.subckt AP_S3 1 2 3 4  
S_S3       3 4 1 2 S3
RS_S3      1 2 1G
.MODEL     S3 VSWITCH Roff=1e6 Ron=1.0 Voff=198mV Von=200mV
.ends AP_S3

.subckt AP_S2 1 2 3 4  
S_S2       3 4 1 2 S2
RS_S2      1 2 1G
.MODEL     S2 VSWITCH Roff=1e6 Ron=1.0 Voff=1.248V Von=1.25V
.ends AP_S2

.subckt AP_S6 1 2 3 4  
S_S6       3 4 1 2 S6
RS_S6      1 2 1G
.MODEL     S6 VSWITCH Roff=10e6 Ron=1.0 Voff=6.505V Von=6.495V
.ends AP_S6

.subckt AP_S7 1 2 3 4  
S_S7       3 4 1 2 S7
RS_S7      1 2 1G
.MODEL     S7 VSWITCH Roff=10e6 Ron=1.0 Voff=2750mV Von=2755mV
.ends AP_S7

.subckt AP_S8 1 2 3 4  
S_S8       3 4 1 2 S8
RS_S8      1 2 1G
.MODEL     S8 VSWITCH Roff=10e6 Ron=1.0 Voff=2750mV Von=2755mV
.ends AP_S8

.subckt AP_S4 1 2 3 4  
S_S4       3 4 1 2 S4
RS_S4      1 2 1G
.MODEL     S4 VSWITCH Roff=10e6 Ron=1 Voff=255mV Von=245mV
.ends AP_S4

.subckt AP_S5 1 2 3 4  
S_S5       3 4 1 2 S5
RS_S5      1 2 1G
.MODEL     S5 VSWITCH Roff=10e6 Ron=1.0 Voff=251mV Von=249mV
.ends AP_S5

.ends AP8803_SIMETRIX
*
*                (c)  2012 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*TITLE=AL8806 MACROMODEL
*ORIGIN=DZSL_AG_GS
*SIMULATOR=DIODES, SIMETRIX and PSPICE
*DATE=22 Jul 2013
*VERSION=3
*PIN_ORDER   1:SET, 2:GND, 3:GND, 4:CTRL, 5:SW, 6:SW, 7: N/C, 8: VIN




* This model is intended for feasibility study of application
* design.  It is expected that it will not accurately represent
* the device real performance.  However some important features
* of the device are modelled approximately.
* The model does not include effects of temperature or self-heating.
* Testing of prototype hardware and optimisation on the bench
* is always required before production build.


* NOTE:  set RELTOL=1E-5 for clean switching waveform

.subckt AL8806 1 2 3 4 5 6 7 8   

Rsh1 2 3 1u
Rsh2 5 6 1u

*                   
* Block 1: Vref Generator * input nodes 8 and 2, outputs 11 and 2
.param  VIL1=0.8  VOL1=0  VIH1=3.45 VOH1=2.5  ;high and low limits of input and output  
.param  MUH1=0.05  MUL1=0.1  ; high and low curve error
.param SL1={(VOH1-VOL1)/(VIH1-VIL1)}  ; gain slope
E11  11  2  value={min(max(VOL1+SL1*(V(8)-V(2)-VIL1+MUL1*(1-tanh((V(8)-V(2)-VIL1+MUL1)/MUL1))
+ -MUH1*(1+tanh((V(8)-V(2)-VIH1-MUH1)/MUH1))) ,VOL1),VOH1)}
R11        11 4  50k  




* Block 2: CTRL limiter  * input nodes  4 and 2, outputs 21 and 2
.param  VIL2=0  VOL2=0  VIH2=2.5 VOH2=2.5  ;high and low limits of input and output  
.param  MUH2=0.001  MUL2=0.2  ; high and low curve error
.param SL2={(VOH2-VOL2)/(VIH2-VIL2)}  ; gain slope
E21  21  2  value={min(max(VOL2+SL2*(V(4)-V(2)-VIL2+MUL2*(1-tanh((V(4)-V(2)-VIL2+MUL2)/MUL2))
+ -MUH2*(1+tanh((V(4)-V(2)-VIH2-MUH2)/MUH2))) ,VOL2),VOH2)}




* Block 3: CTRL lockout with hysteresis *
R32        21  31  1000  
I31        21  31  100uA  
R31        31  32  1k
C31        32   2  10p
S31        31  21 32  2  S_31          
.model   S_31   VSWITCH Roff=10e6 Ron=1 Voff=505mV Von=495mV




S32        53  2 32 2  S_32 
.MODEL   S_32   VSWITCH Roff=10e6 Ron=100 Voff=501mV Von=499mV

* Block 4: UVLO with hysteresis*
E41       41 2  value={0.5*(1+tanh(1e3*(V(43)-V(8)+5.7)))}
R41       41 42 1k
C41       42 2  20p
R42       42 43 800k
R43       43 2  200k
S41       53 2 42 2   S_41 
.MODEL   S_41   VSWITCH Roff=1e6 Ron=100 Voff=0.4 Von=0.6




* Block 5: Current Sense Comparator*
G51        2 51 8 1 1m  ;  input amplifier
C51        2  1  3p      ;  input capacitance



* SET input current; asymptote input nodes 1 and 2, outputs 1 and 2
.param  xx5=5  yy5=16u  nn5=32;input corner, output limit, asymptote power
.param  aa5={xx5**nn5}
G52  1  2  value={yy5*(V(1)-V(2))/(aa5+(V(1)-V(2))**nn5)**(1/nn5)}
R51        2  52  10.417k  
R52        52 51  20.833k  
S51        52 2 66 2   S_51 
.MODEL     S_51  VSWITCH Roff=10e6 Ron=1.0 Voff=2.5V Von=2.8V
C52        51  2 0.5p
G53        53  2 value={0.01*tanh(100*(V(51)-V(21)))} ;comparator
C54        53  2 1f  
V51        54  2 700mV
D51        54 53 Dclamp
V52        55  2 8V
D52        53 55 Dclamp




* Block 6: Comp Delay and gate driver*
R64        53 63  10Meg    ;  input filter with C61 
C61        63  2  0.0015p   ;  
G61        61 65  Value={0.1*(max(V(63)-V(65)-0.5,0))**2*(V(61)-V(65))}
G62        65 62  Value={0.1*(max(V(65)-V(63)-0.5,0))**2*(V(65)-V(62))}
R66        61 65 10meg
R67        65 62 10meg
R61         8 61  1.2
R62        62  2  1.2
R63        65  2  10k

R65        65 64  1        ;  driver current sense
R68        66 64  49        ;  output resistance-1 ohm
C62         2 66  25f  




* Block 7: Output NMOS *
S71        72 71 66 71 S_71 
.MODEL     S_71 VSWITCH Roff=10e6 Ron=0.25 Voff=2.5V Von=2.8V
R72        72  5  50m     ; on resistance = R72 + R73 + Ron(S71) 
R73        71  2  50m
C73        72 71  100p
C71        66 71  40p
C72        72 66  15p
 
* Block 8: Supply Current *
G81         8  2 Value={(300u*(V(11)-V(2))/VOH1)+0.6u*(V(8)-V(2))}

* Block 9: Protection diodes
D91   2  5  D_1     ;SW
D92   2  8  D_1     ;VIN
D93   2  4  D_2     ;CTRL
D94   8  1  D_2    ;SET forward
D95   1  8  D_2    ;SET reverse

.model Dclamp  D Is=2.682n N=1.836 Rs=.5664 Ikf=44.17m Cjo=4p M=.3333 Vj=.5
.model D_1  D  IS=1e-14 BV=40
.model D_2  D  IS=1e-14 BV=6.5

.ends AL8805


*  =====================================================================
*
*                (c)  2013 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition or warranty as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Incorporated, 4949 Hedgcoxe Road, Suite 200, Plano, TX 75024, USA


*TITLE=AL8807 MACROMODEL
*ORIGIN=DZSL_AG_GS
*SIMULATOR=DIODES, SIMETRIX and PSPICE
*DATE=17th Jan 2013
*VERSION=1
*PIN_ORDER   1:SW, 2:GND, 3:CTRL, 4:SET, 5:VIN
*
* This model is intended for feasibility study of application
* design.  It is expected that it will not accurately represent
* the device real performance.  However some important features
* of the device are modelled approximately.
* The model does not include effects of temperature or self-heating.
* Testing of prototype hardware and optimisation on the bench
* is always required before production build.
*
* NOTE:  set RELTOL=1E-5 for clean switching waveform
*
.subckt AL8807   10   26   13  20   18  
* Connections    SW  GND  CTRL SET  VIN
* pins   SOT23   1   2    3    4    5
*                   
* Block 1: Vref Generator *  input is V(18)-V(26)
*required input parameters
.param  VIL1=0.7  VIH1=3.5  VOL1=0 VOH1=2.5  ; low and high limits of input and output  
.param  MUL1=0.1  MUH1=0.05  ; low and high curve error
*calculations
.param KL1={MUL1*tanh((VIH1-VIL1)/MUL1)}  KH1={MUH1*tanh((VIH1-VIL1)/MUH1)}
.param SL1={(VOH1-VOL1)/(VIH1-VIL1-KL1-KH1)}  ;gain slope
E11 14 26 value={min(max(VOL1+SL1*(V(18)-V(26)-VIL1-MUL1*tanh((V(18)-V(26)-VIL1)/MUL1)
+ -MUH1*tanh((V(18)-V(26)-VIH1)/MUH1)-KH1),VOL1),VOH1)}
R4         14 13  50k  

* Block 2: CTRL limiter
* tanh limiter, type 1, input nodes 13 and 26, outputs 12 and 26
.param  VIH2=2.5  VOH2=2.5  ;high limits of input and output  
.param  MU2=0.001  ; curve error
.param SL2={VOH2/VIH2}  ;gain slope
E21  12  26  value={SL2*min(V(13)-V(26)-MU2*(1+tanh((V(13)-V(26)-VIH2-MU2)/MU2)),VOH2)}

* Block 3: CTRL lockout with hysteresis *
R8         12 adj_lockout  1000  
I1         12 adj_lockout 100uA  
R31        adj_lockout 31  1k
C31        31 26 10p
S4   adj_lockout 12 31 26  S_4          
.model   S_4   VSWITCH Roff=10e6 Ron=1 Voff=505mV Von=495mV

S5       21 26 31 26  S_5 
.MODEL  S_5   VSWITCH Roff=10e6 Ron=100 Voff=501mV Von=499mV

* Block 4: UVLO with hysteresis*
E41       41 26 value={0.5*(1+tanh(1e3*(V(43)-V(18)+5.7)))}
R41       41 42 1k
C41       42 26 20p
R42       42 43 800k
R43       43 26 200k
S41       21 26 42 26   S_41 
.MODEL   S_41   VSWITCH Roff=1e6 Ron=100 Voff=0.4 Von=0.6

* Block 5: Current Sense Comparator*
G51        26 8 18 20 1m  ;  input amplifier
C51         26 20  3p      ;  input capacitance
* SET input current; asymptote input nodes 20 and 26, outputs 20 and 26
.param  xx5=5  yy5=16u  nn5=32;input corner, output limit, asymptote power
.param  aa5={xx5**nn5}
G52  20  26  value={yy5*(V(20)-V(26))/(aa5+(V(20)-V(26))**nn5)**(1/nn5)}
R51        26 9  10.417k  
R52        9 8  20.833k  
S51        9 26 23 26   S_51 
.MODEL     S_51  VSWITCH Roff=10e6 Ron=1.0 Voff=2.5V Von=2.8V
C52        8  26 0.5p
G53        21 26 value={0.01*tanh(100*(V(8)-V(12)))} ;comparator
C54        21 26 1f  
V3         24 26 700mV
D8         24 21 Dclamp
V4         22 26 8V
D9         21 22 Dclamp

* Block 6: Comp Delay and gate driver*
R64        21 63  10Meg    ;  input filter with C61 
C61        63 26  0.0015p   ;  
G4         61 25  Value={0.1*(max(V(63)-V(25)-0.5,0))**2*(V(61)-V(25))}
G5         25 62  Value={0.1*(max(V(25)-V(63)-0.5,0))**2*(V(25)-V(62))}
R66        61 25 10meg
R67        25 62 10meg
R61        18 61  1.2
R62        62 26  1.2
R63        25 26  10k

R65        25 64  1        ;  driver current sense
R13        23 64  330        ;  output resistance-1 ohm
C6         26 23  25f  

* Block 7: Output NMOS *
S8       11 71 23 71 S_8 
.MODEL     S_8 VSWITCH Roff=10e6 Ron=0.25 Voff=2.5V Von=2.8V
R72        11 10  50m     ; on resistance = R72 + R73 + Ron(S8) 
R73        71 26  50m
C5         11 71  100p
C71        23 71  40p
C72        11 23  15p
 
* Block 8: Supply Current *
G81         18 26 Value={(300u*(V(14)-V(26))/VOH1)+0.6u*(V(18)-V(26))}

* Block 9: Protection diodes
D91  26 10 D_1     ;SW
D92  26 18 D_1     ;VIN
D93  26 13 D_2     ;CTRL
D94  18 20  D_2    ;SET forward
D95  20 18  D_2    ;SET reverse

.model Dclamp  D Is=2.682n N=1.836 Rs=.5664 Ikf=44.17m Cjo=4p M=.3333 Vj=.5
.model D_1  D  IS=1e-14 BV=40
.model D_2  D  IS=1e-14 BV=6.5

.ends AL8807
*  =====================================================================
*
*                (c)  2013 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition or warranty as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Incorporated, 4949 Hedgcoxe Road, Suite 200, Plano, TX 75024, USA
*


*TITLE=AL8807A MACROMODEL
*ORIGIN=DZSL_AG_GS
*SIMULATOR=DIODES, SIMETRIX and PSPICE
*DATE=1st Feb 2013
*VERSION=1
*PIN_ORDER   1:SW, 2:GND, 3:CTRL, 4:SET, 5:VIN
*
* This model is intended for feasibility study of application
* design.  It is expected that it will not accurately represent
* the device real performance.  However some important features
* of the device are modelled approximately.
* The model does not include effects of temperature or self-heating.
* Testing of prototype hardware and optimisation on the bench
* is always required before production build.
*
* NOTE:  set RELTOL=1E-5 for clean switching waveform
*
.subckt AL8807A  1   2    3    4     5  
* Connections    SW  GND  CTRL SET  VIN
* pins   SOT23   1   2    3    4     5
*                   
* Block 1: Vref Generator * input nodes 5 and 2, outputs 11 and 2
.param  VIL1=0.8  VOL1=0  VIH1=3.45 VOH1=2.5  ;high and low limits of input and output  
.param  MUH1=0.05  MUL1=0.1  ; high and low curve error
.param SL1={(VOH1-VOL1)/(VIH1-VIL1)}  ; gain slope
E11  11  2  value={min(max(VOL1+SL1*(V(5)-V(2)-VIL1+MUL1*(1-tanh((V(5)-V(2)-VIL1+MUL1)/MUL1))
+ -MUH1*(1+tanh((V(5)-V(2)-VIH1-MUH1)/MUH1))) ,VOL1),VOH1)}
R11        11 3  50k  

* Block 2: CTRL limiter  * input nodes  3 and 2, outputs 21 and 2
.param  VIL2=0  VOL2=0  VIH2=2.5 VOH2=2.5  ;high and low limits of input and output  
.param  MUH2=0.001  MUL2=0.2  ; high and low curve error
.param SL2={(VOH2-VOL2)/(VIH2-VIL2)}  ; gain slope
E21  21  2  value={min(max(VOL2+SL2*(V(3)-V(2)-VIL2+MUL2*(1-tanh((V(3)-V(2)-VIL2+MUL2)/MUL2))
+ -MUH2*(1+tanh((V(3)-V(2)-VIH2-MUH2)/MUH2))) ,VOL2),VOH2)}

* Block 3: CTRL lockout with hysteresis *  not used

* Block 4: UVLO with hysteresis*
E41       41 2  value={0.5*(1+tanh(1e3*(V(43)-V(5)+5.7)))}
R41       41 42 1k
C41       42 2  20p
R42       42 43 800k
R43       43 2  200k
S41       53 2 42 2   S_41 
.MODEL   S_41   VSWITCH Roff=1e6 Ron=100 Voff=0.4 Von=0.6

* Block 5: Current Sense Comparator*
G51        2 51 5 4 1m  ;  input amplifier
C51        2  4  3p      ;  input capacitance
* SET input current; asymptote input nodes 4 and 2, outputs 4 and 2
.param  xx5=5  yy5=16u  nn5=32;input corner, output limit, asymptote power
.param  aa5={xx5**nn5}
G52  4  2  value={yy5*(V(4)-V(2))/(aa5+(V(4)-V(2))**nn5)**(1/nn5)}
R51        2  52  10.417k  
R52        52 51  20.833k  
S51        52 2 66 2   S_51 
.MODEL     S_51  VSWITCH Roff=10e6 Ron=1.0 Voff=2.5V Von=2.8V
C52        51  2 0.5p
G53        53  2 value={0.01*tanh(100*(V(51)-V(21)))} ;comparator
C54        53  2 1f  
V51        54  2 700mV
D51        54 53 Dclamp
V52        55  2 8V
D52        53 55 Dclamp

* Block 6: Comp Delay and gate driver*
R64        53 63  10Meg    ;  input filter with C61 
C61        63  2  0.0015p   ;  
G61        61 65  Value={0.1*(max(V(63)-V(65)-0.5,0))**2*(V(61)-V(65))}
G62        65 62  Value={0.1*(max(V(65)-V(63)-0.5,0))**2*(V(65)-V(62))}
R66        61 65 10meg
R67        65 62 10meg
R61         5 61  1.2
R62        62  2  1.2
R63        65  2  10k

R65        65 64  1        ;  driver current sense
R68        66 64  330        ;  output resistance-1 ohm
C62         2 66  25f  

* Block 7: Output NMOS *
S71        72 71 66 71 S_71 
.MODEL     S_71 VSWITCH Roff=10e6 Ron=0.25 Voff=2.5V Von=2.8V
R72        72  1  50m     ; on resistance = R72 + R73 + Ron(S71) 
R73        71  2  50m
C73        72 71  100p
C71        66 71  40p
C72        72 66  15p
 
* Block 8: Supply Current *
G81         5  2 Value={(300u*(V(11)-V(2))/VOH1)+0.6u*(V(5)-V(2))}

* Block 9: Protection diodes
D91   2  1  D_1     ;SW
D92   2  5  D_1     ;VIN
D93   2  3  D_2     ;CTRL
D94   5  4  D_2    ;SET forward
D95   4  5  D_2    ;SET reverse

.model Dclamp  D Is=2.682n N=1.836 Rs=.5664 Ikf=44.17m Cjo=4p M=.3333 Vj=.5
.model D_1  D  IS=1e-14 BV=40
.model D_2  D  IS=1e-14 BV=6.5

.ends AL8807A
*  =====================================================================
*
*                (c)  2013 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition or warranty as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Incorporated, 4949 Hedgcoxe Road, Suite 200, Plano, TX 75024, USA


**$ENCRYPTED_LIB
**$INTERFACE
*$
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$CDNENCFINISH
.ENDS ZXLD1371_PSPICE
*$
.subckt ZXLD1371_FOR_HIERARCHY_S7 1 2 3 4  
$CDNENCSTART
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$CDNENCFINISH
.ends ZXLD1371_FOR_HIERARCHY_S7
*$
.subckt ZXLD1371_FOR_HIERARCHY_S4 1 2 3 4  
$CDNENCSTART
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$CDNENCFINISH
.ends ZXLD1371_FOR_HIERARCHY_S4
*$
.subckt ZXLD1371_FOR_HIERARCHY_S1 1 2 3 4  
$CDNENCSTART
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$CDNENCFINISH
.ends ZXLD1371_FOR_HIERARCHY_S1
*$
.subckt ZXLD1371_FOR_HIERARCHY_S5 1 2 3 4  
$CDNENCSTART
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$CDNENCFINISH
.ends ZXLD1371_FOR_HIERARCHY_S5
*$
.subckt ZXLD1371_FOR_HIERARCHY_S9 1 2 3 4  
$CDNENCSTART
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$CDNENCFINISH
.ends ZXLD1371_FOR_HIERARCHY_S9
*$
.subckt FREQ_HYS_CONTROL_freq_S5 1 2 3 4  
$CDNENCSTART
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$CDNENCFINISH
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*$
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425c9b52d84437faed112ed3066b88085a8d2d705d2688894223460450a363bd9d521bfb0940593fa0c7a89b875d76a7b0718e2bf61f10a79c4d3d62406ead54
1faea247e1a8c1555afff61ed7f1575cc9ea4b833c89b58ac9f6c53b093b66727f70dd368fa57289ba6003231ac0493b63635097c559ebe1683daeb2b137fd4d
b211161c561aa8ac73e70156d3cd9e3236806a8e381bf9a0b74feb6ff8076c794d22c850cafe6d88de6b5e23e32a61b6bd761caf95d962ddf56ff53d81d427bd
ff2f30a0f5680561a8b2bab6b462538002e6d7b91a055bf47df3b84ad0c4ee9bc9f6c53b093b66727f70dd368fa57289ba6003231ac0493b0801900bb0d2ae74
$CDNENCFINISH
.ENDS OPAMP
*$
.SUBCKT SR_LATCH S R Q Qb
$CDNENCSTART
eee8c5c7a2bc4b01f045f303678664e7916da0bae22e8cb0bba041dd67c69ce448ea70148a9ac1670c8926c1ac5057c8ccfcd77bf87ca9dc6004e157994bc9bf
3ff62270067d0a2acd275293805a1df15414ce0c3c28bd7fe83384dc37890adeef1c3670504e0551f3c5bb9f3f22721496d6f86ec564aabc82d021902886a9e0
a7cbdf8ef8369f02abcd5bc418da0bde184dc1300cea2a1333803012812e35a27bbf3a0197757d1a6ff4dc351624cea4964c77ba3214ca8c9d716709579b3adb
b521439d911db4ae985fd30f1da54348f716375b8c71d2ca7447dc705bd2b9a632f1f96ca76f178f24a8b58514063cc5773cfc1bd26698df56a4048f1e4ff032
b9714e9f0185ebe0c3fa3d1e401a4503979added4bba322bd4f2da227571b4d2d5df8edfc52ef08bf588045849eceb90e6626fc5bfd508b1d776614f460f1ceb
ff7b9cdb444d3489f5af95f73630db59f588045849eceb90e6626fc5bfd508b16334dff5a8e8736c568101f0eaa845cf3900116365b287716165f3a5d711faa4
1054010ec6d491bee18a20b319ef4d27a0c7a89b875d76a7b0718e2bf61f10a7ff08e5ba163dd43c18663872d39f019dc350cbfaf73a0398017aa9b2faa6789e
$CDNENCFINISH
.ENDS SR_LATCH
*$



*TITLE=AL8805 MACROMODEL
*ORIGIN=DZSL_AG_GS
*SIMULATOR=DIODES, SIMETRIX and PSPICE
*DATE=1st Feb 2013
*VERSION=2
*PIN_ORDER   1:SW, 2:GND, 3:CTRL, 4:SET, 5:VIN
*
* This model is intended for feasibility study of application
* design.  It is expected that it will not accurately represent
* the device real performance.  However some important features
* of the device are modelled approximately.
* The model does not include effects of temperature or self-heating.
* Testing of prototype hardware and optimisation on the bench
* is always required before production build.
*
* NOTE:  set RELTOL=1E-5 for clean switching waveform
*
.subckt AL8805  1   2    3    4     5  
* Connections    SW  GND  CTRL SET  VIN
* pins   SOT23   1   2    3    4     5
*                   
* Block 1: Vref Generator * input nodes 5 and 2, outputs 11 and 2
.param  VIL1=0.8  VOL1=0  VIH1=3.45 VOH1=2.5  ;high and low limits of input and output  
.param  MUH1=0.05  MUL1=0.1  ; high and low curve error
.param SL1={(VOH1-VOL1)/(VIH1-VIL1)}  ; gain slope
E11  11  2  value={min(max(VOL1+SL1*(V(5)-V(2)-VIL1+MUL1*(1-tanh((V(5)-V(2)-VIL1+MUL1)/MUL1))
+ -MUH1*(1+tanh((V(5)-V(2)-VIH1-MUH1)/MUH1))) ,VOL1),VOH1)}
R11        11 3  50k  

* Block 2: CTRL limiter  * input nodes  3 and 2, outputs 21 and 2
.param  VIL2=0  VOL2=0  VIH2=2.5 VOH2=2.5  ;high and low limits of input and output  
.param  MUH2=0.001  MUL2=0.2  ; high and low curve error
.param SL2={(VOH2-VOL2)/(VIH2-VIL2)}  ; gain slope
E21  21  2  value={min(max(VOL2+SL2*(V(3)-V(2)-VIL2+MUL2*(1-tanh((V(3)-V(2)-VIL2+MUL2)/MUL2))
+ -MUH2*(1+tanh((V(3)-V(2)-VIH2-MUH2)/MUH2))) ,VOL2),VOH2)}

* Block 3: CTRL lockout with hysteresis *
R32        21  31  1000  
I31        21  31  100uA  
R31        31  32  1k
C31        32   2  10p
S31        31  21 32  2  S_31          
.model   S_31   VSWITCH Roff=10e6 Ron=1 Voff=505mV Von=495mV

S32        53  2 32 2  S_32 
.MODEL   S_32   VSWITCH Roff=10e6 Ron=100 Voff=501mV Von=499mV

* Block 4: UVLO with hysteresis*
E41       41 2  value={0.5*(1+tanh(1e3*(V(43)-V(5)+5.7)))}
R41       41 42 1k
C41       42 2  20p
R42       42 43 800k
R43       43 2  200k
S41       53 2 42 2   S_41 
.MODEL   S_41   VSWITCH Roff=1e6 Ron=100 Voff=0.4 Von=0.6

* Block 5: Current Sense Comparator*
G51        2 51 5 4 1m  ;  input amplifier
C51        2  4  3p      ;  input capacitance
* SET input current; asymptote input nodes 4 and 2, outputs 4 and 2
.param  xx5=5  yy5=16u  nn5=32;input corner, output limit, asymptote power
.param  aa5={xx5**nn5}
G52  4  2  value={yy5*(V(4)-V(2))/(aa5+(V(4)-V(2))**nn5)**(1/nn5)}
R51        2  52  10.417k  
R52        52 51  20.833k  
S51        52 2 66 2   S_51 
.MODEL     S_51  VSWITCH Roff=10e6 Ron=1.0 Voff=2.5V Von=2.8V
C52        51  2 0.5p
G53        53  2 value={0.01*tanh(100*(V(51)-V(21)))} ;comparator
C54        53  2 1f  
V51        54  2 700mV
D51        54 53 Dclamp
V52        55  2 8V
D52        53 55 Dclamp

* Block 6: Comp Delay and gate driver*
R64        53 63  10Meg    ;  input filter with C61 
C61        63  2  0.0015p   ;  
G61        61 65  Value={0.1*(max(V(63)-V(65)-0.5,0))**2*(V(61)-V(65))}
G62        65 62  Value={0.1*(max(V(65)-V(63)-0.5,0))**2*(V(65)-V(62))}
R66        61 65 10meg
R67        65 62 10meg
R61         5 61  1.2
R62        62  2  1.2
R63        65  2  10k

R65        65 64  1        ;  driver current sense
R68        66 64  49        ;  output resistance-1 ohm
C62         2 66  25f  

* Block 7: Output NMOS *
S71        72 71 66 71 S_71 
.MODEL     S_71 VSWITCH Roff=10e6 Ron=0.25 Voff=2.5V Von=2.8V
R72        72  1  50m     ; on resistance = R72 + R73 + Ron(S71) 
R73        71  2  50m
C73        72 71  100p
C71        66 71  40p
C72        72 66  15p
 
* Block 8: Supply Current *
G81         5  2 Value={(300u*(V(11)-V(2))/VOH1)+0.6u*(V(5)-V(2))}

* Block 9: Protection diodes
D91   2  1  D_1     ;SW
D92   2  5  D_1     ;VIN
D93   2  3  D_2     ;CTRL
D94   5  4  D_2    ;SET forward
D95   4  5  D_2    ;SET reverse

.model Dclamp  D Is=2.682n N=1.836 Rs=.5664 Ikf=44.17m Cjo=4p M=.3333 Vj=.5
.model D_1  D  IS=1e-14 BV=40
.model D_2  D  IS=1e-14 BV=6.5

.ends AL8805
*  =====================================================================
*
*                (c)  2013 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition or warranty as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Incorporated, 4949 Hedgcoxe Road, Suite 200, Plano, TX 75024, USA


*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*DATE=23/07/2015
*VERSION=1

*PIN ORDER 1:EN 2:OUT 3:OUT 4:GND 5:OUT 6:Rext
.SUBCKT BCR420UW6 1 2 3 4 5 6 


Q1 5 8 6 BCRNPN
R1 1 8 20K TC1=0.2m
R2 6 4 95 TC1=2m
Rshort23 2 3 10u
Rshort35 3 5 10u
D1 8 9 BCRdiode
D2 9 4 BCRdiode



.MODEL BCRNPN NPN IS=300e-11 NF=1.2 ISE=30e-15 NE=1.2 BF=350
+ VAF=10 IKF=300m ISC=2e-13 NC=1.2 BR=15 NR=1 RE=0.01
+ RB=0.33 RC=0.01 CJE=60e-12 VJE=0.55 MJE=0.36 CJC=15e-12 VJC=0.5
+ MJC=0.35 TF=1e-9 TR=4e-9  QUASIMOD=1 RCO=1 GAMMA=1.3e-9 NK=.55
+ XTB=1.4 TRE1=0.004 TRB1=0.003 TRC1=0.004



.model BCRdiode D(IS=3f RS=.01 N=1.05 IKF=1m CJO=.5p M=0.3 VJ=0.7
+ BV=3 XTI=12.5)



.ENDS

.SIMULATOR DEFAULT


*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*DATE=23/07/2015
*VERSION=1

*PIN ORDER 1:EN 2:OUT 3:OUT 4:GND 5:OUT 6:Rext

.SUBCKT BCR421UW6 1 2 3 4 5 6 
Q1 5 8 6 BCRNPN
R1 1 8 1.5K TC1=0.2m
R2 6 4 95 TC1=2m
Rshort23 2 3 10u
Rshort35 3 5 10u
D1 8 9 BCRdiode
D2 9 4 BCRdiode
.MODEL BCRNPN NPN IS=300e-11 NF=1.2 ISE=30e-15 NE=1.2 BF=350
+ VAF=10 IKF=300m ISC=2e-13 NC=1.2 BR=15 NR=1 RE=0.01
+ RB=0.33 RC=0.01 CJE=60e-12 VJE=0.55 MJE=0.36 CJC=15e-12 VJC=0.5
+ MJC=0.35 TF=1e-9 TR=4e-9  QUASIMOD=1 RCO=1 GAMMA=1.3e-9 NK=.6
+ XTB=1.4 TRE1=0.004 TRB1=0.003 TRC1=0.004
.model BCRdiode D(IS=10f RS=.01 N=1.05 IKF=1m CJO=.5p M=0.3 VJ=0.7
+ BV=3 XTI=10)
.ENDS

.SIMULATOR DEFAULT


*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*DATE=23/07/2015
*VERSION=1

*PIN ORDER 1:EN 2:OUT 3:OUT 4:GND 5:OUT 6:Rext

.SUBCKT BCR421UW6 1 2 3 4 5 6 
Q1 5 8 6 BCRNPN
R1 1 8 1.5K TC1=0.2m
R2 6 4 95 TC1=2m
Rshort23 2 3 10u
Rshort35 3 5 10u
D1 8 9 BCRdiode
D2 9 4 BCRdiode
.MODEL BCRNPN NPN IS=300e-11 NF=1.2 ISE=30e-15 NE=1.2 BF=350
+ VAF=10 IKF=300m ISC=2e-13 NC=1.2 BR=15 NR=1 RE=0.01
+ RB=0.33 RC=0.01 CJE=60e-12 VJE=0.55 MJE=0.36 CJC=15e-12 VJC=0.5
+ MJC=0.35 TF=1e-9 TR=4e-9  QUASIMOD=1 RCO=1 GAMMA=1.3e-9 NK=.6
+ XTB=1.4 TRE1=0.004 TRB1=0.003 TRC1=0.004
.model BCRdiode D(IS=10f RS=.01 N=1.05 IKF=1m CJO=.5p M=0.3 VJ=0.7
+ BV=3 XTI=10)
.ENDS

.SIMULATOR DEFAULT


*DIODES_INC_SPICE_MODEL
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=5OCT2011
*VERSION=1

*PINS ORDER OUT BIAS EN GND FB Rext

.SUBCKT AL5802 1 2 3 4 5 6
Q1 1 3 6 T2
Q2 3 5 4 T1
R1 2 3 10K TC1=-4E-3
.MODEL T2 NPN IS=2.6E-14 NF=1 BF=300 ISE=4.5E-15 NE=1.5 
+ BR=5 ISC=2E-14 NC=1.3 NR=1 CJC=5.6E-12 MJC=0.24 VJC=0.4
+ CJE=13.49E-12 MJE=0.37 VJE=0.75 
.MODEL T1 NPN IS=1E-14 NF=1 BF=150 ISE=8E-15 NE=1.5 
+ BR=1.5 ISC=1.2E-13 NC=1.5 NR=1 CJC=5.279E-12 MJC=0.28 VJC=0.5
+ CJE=8.92E-12 MJE=0.36 VJE=0.73 
.ENDS

.SIMULATOR DEFAULT


*                (c)  2012 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*TITLE=BCR401UW6
*DATE=12/05/2016
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*VERSION=1




*PIN ORDER 1:GND 2:OUT 3:OUT 4:VS 5:OUT 6:Rext

.SUBCKT BCR401UW6 1 6 2 5 3 4 

Q1 5 8 6 BCRPNP
R1 8 1 22K TC=2m,8u
R2 6 4 91 TC=3.5m,6u
Rshort23 2 3 1m
Rshort35 3 5 1m
D1 4 9 BCRdiode
D2 9 8 BCRdiode


.MODEL BCRPNP PNP (IS=100.000f NF=0.995 BF=440 VAF=4.000 IKF=.14
+ ISE=.55n NE=2.234 NR=1.005 BR=4.800 ISC=0.125P NC=2.074
+ RB=1.00 RE=0.82 RC=1.4
+ CJE=10P VJE=0.9000 MJE=0.4
+ CJC=10P VJC=0.900 MJC=0.55 
+ TF=8.600n TR=2.604n XTB=1.900 EG=1.110 XTI=3.300)

.model BCRdiode D(IS=2.4E-16 N=1.06 RS=2 IBV=1.00E-04 BV=7.5E+01 IKF=.15m
+ M=.45 CJO=1E-14 EG=1.11E+00
+ TT=8.66E-012 VJ=1.1E+00 XTI=3.0E+00)


.ENDS



*                (c)  2016 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*TITLE=BCR402UW6
*DATE=12/05/2016
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*VERSION=1

*PIN ORDER 1:GND 2:OUT 3:OUT 4:VS 5:OUT 6:Rext

.SUBCKT BCR402UW6 1 6 2 5 3 4 

Q1 5 8 6 BCRPNP
R1 8 1 22K TC=2m,8u
R2 6 4 44 TC=3.5m,6u
Rshort23 2 3 1m
Rshort35 3 5 1m
D1 4 9 BCRdiode
D2 9 8 BCRdiode


.MODEL BCRPNP PNP (IS=100.000f NF=0.995 BF=440 VAF=4.000 IKF=.14
+ ISE=.55n NE=2.234 NR=1.005 BR=4.800 ISC=0.125P NC=2.074
+ RB=1.00 RE=0.82 RC=1.4
+ CJE=10P VJE=0.9000 MJE=0.4
+ CJC=10P VJC=0.900 MJC=0.55 
+ TF=8.600n TR=2.604n XTB=1.900 EG=1.110 XTI=3.300)

.model BCRdiode D(IS=2.4E-16 N=1.06 RS=2 IBV=1.00E-04 BV=7.5E+01 IKF=.15m
+ M=.45 CJO=1E-14 EG=1.11E+00
+ TT=8.66E-012 VJ=1.1E+00 XTI=3.0E+00)


.ENDS



*                (c)  2016 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*TITLE=BCR405UW6
*DATE=12/05/2016
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*VERSION=1

*PIN ORDER 1:GND 2:OUT 3:OUT 4:VS 5:OUT 6:Rext

.SUBCKT BCR405UW6 1 6 2 5 3 4 

Q1 5 8 6 BCRPNP
R1 8 1 22K TC=2m,8u
R2 6 4 16.5 TC=4m,6u
Rshort23 2 3 1m
Rshort35 3 5 1m
D1 4 9 BCRdiode
D2 9 8 BCRdiode


.MODEL BCRPNP PNP (IS=220.000f NF=0.995 BF=440 VAF=4.000 IKF=.18
+ ISE=.55n NE=2.234 NR=1.005 BR=4.800 ISC=0.125P NC=2.074
+ RB=1.00 RE=0.82 RC=1.4
+ CJE=10P VJE=0.9000 MJE=0.4
+ CJC=10P VJC=0.900 MJC=0.55 
+ TF=8.600n TR=2.604n XTB=1.900 EG=1.110 XTI=3.300)

.model BCRdiode D(IS=2.4E-16 N=1.06 RS=2 IBV=1.00E-04 BV=7.5E+01 IKF=.08m
+ M=.45 CJO=1E-14 EG=1.11E+00
+ TT=8.66E-012 VJ=1.1E+00 XTI=3.0E+00)


.ENDS

*                (c)  2016 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*DATE=23/07/2015
*VERSION=1

*PIN ORDER 1:EN 2:OUT 3:OUT 4:GND 5:OUT 6:Rext
.SUBCKT BCR420UW6Q 1 2 3 4 5 6 


Q1 5 8 6 BCRNPN
R1 1 8 20K TC1=0.2m
R2 6 4 95 TC1=2m
Rshort23 2 3 10u
Rshort35 3 5 10u
D1 8 9 BCRdiode
D2 9 4 BCRdiode



.MODEL BCRNPN NPN IS=300e-11 NF=1.2 ISE=30e-15 NE=1.2 BF=350
+ VAF=10 IKF=300m ISC=2e-13 NC=1.2 BR=15 NR=1 RE=0.01
+ RB=0.33 RC=0.01 CJE=60e-12 VJE=0.55 MJE=0.36 CJC=15e-12 VJC=0.5
+ MJC=0.35 TF=1e-9 TR=4e-9  QUASIMOD=1 RCO=1 GAMMA=1.3e-9 NK=.55
+ XTB=1.4 TRE1=0.004 TRB1=0.003 TRC1=0.004



.model BCRdiode D(IS=3f RS=.01 N=1.05 IKF=1m CJO=.5p M=0.3 VJ=0.7
+ BV=3 XTI=12.5)



.ENDS

.SIMULATOR DEFAULT


*ZETEX ZMR500 Spice Model v1.0 Last revision 31/01/07
    *
    .SUBCKT ZMR500 1 2 3 
    * Connections  IN_GND_OUT
    Q1 12 5 6 Qmod1
    R1 4 2 Rmod1 1
    R2 6 7 0.04
    R4 10 2 15E3
    R5 6 8 1E6
    R6 5 6 1E6
    D1 1 11 Dmod1
    D2 11 12 Dmod1
    R8 7 2 Rmod3 100E3
    C4 8 10 130E-12
    I1 2 4 5.001
    G1 5 7 8 4 1
    G2 2 4 1 2 5E-4
    VS 3 7 0
    F1 2 4 VS 0.5
    .MODEL Qmod1 NPN (RC=10 RB=10 RE=10 CJC=2p CJE=5p)
    .MODEL Dmod1 D (IS=0.8E-15)
    .MODEL Rmod1 RES (TC1=-3.9E-5 TC2=-6.1E-7)
    .MODEL Rmod3 RES (TC1=-5E-4 TC2=0E-7)
    .ENDS ZMR500
    *
    *$
    *


*ZETEX ZHT431 Spice Model v1.0 Last Revised 22/7/2005
    *              
    *NOTE: This is a simplified Model.  Do not rely on this Model for 
    *validation of circuit stability.  It does not accurately replicate 
    *stability boundary conditions with additional load capacitance.  
    *Check stability by normal breadboarding techniques.
    *
    .SUBCKT ZHT431 1 2 3
    *Connections  Vz Vref Gnd
    *Input current
    L2 2 12 2E-9
    Rin 12 13 Rmod1 20E6
    Cin 12 13 1E-12
    D1 13 12 Dmod
    D2 12 11 Dmod
    *Reference voltage, Voltage dependence
    Iref 13 21 2.4985E-3
    Rref 21 13 Rmod2 1000
    G1 21 13 11 13 1.43E-6
    *Gain, time constant  and  clamp voltage
    G2 13 31 12 21 0.004
    Rt1 31 13 1E8
    Ct1 31 32  800E-12
    Rt2 32 13 2000
    Ct2 31 33  50E-12
    Rt3 33 13 5
    D3 31 13 Dmod
    D4 13 31 Dmod
    *Buffer,Output
    G3 13 41 13 31 0.22
    L1 1 11 2E-9
    Rz 11 42 10
    D5 42 41 Dmod
    D6 13 41 Dmod
    D7 13 11 Dmod
    Rx 13 23 0.5
    L3 3 23 2E-9
    Rq 11 13  Rmod3 74E3
    *
    .MODEL Rmod1 RES (TC1=2.95E-3 TC2=-5E-7)
    .MODEL Rmod2 RES (TC1=8.5E-6 TC2=-3.3E-7)
    .MODEL Rmod3 RES (TC1=-2.5E-3 TC2=2E-5)
    .MODEL Dmod D IS=1E-14 RS=0.1 BV=22 CJO=0.1E-12
    .ENDS  ZHT431
    *
    *$
    *


*ZETEX ZR431 Spice Model v1.0 Last Revised 31/3/2005
    *              
    *NOTE: This is a simplified Model.  Do not rely on this Model for 
    *validation of circuit stability.  It does not accurately replicate 
    *stability boundary conditions with additional load capacitance.  
    *Check stability by normal breadboarding techniques.
    *
    .SUBCKT ZR431 1 2 3
    *Connections  Vz Vref Gnd
    *Input current
    L2 2 12 2E-9
    Rin 12 13 Rmod1 20E6
    Cin 12 13 1E-12
    D1 13 12 Dmod
    D2 12 11 Dmod
    *Reference voltage, Voltage dependence
    Iref 13 21 2.4985E-3
    Rref 21 13 Rmod2 1000
    G1 21 13 11 13 1.43E-6
    *Gain, time constant  and  clamp voltage
    G2 13 31 12 21 0.004
    Rt1 31 13 1E8
    Ct1 31 32  800E-12
    Rt2 32 13 2000
    Ct2 31 33  50E-12
    Rt3 33 13 5
    D3 31 13 Dmod
    D4 13 31 Dmod
    *Buffer,Output
    G3 13 41 13 31 0.22
    L1 1 11 2E-9
    Rz 11 42 10
    D5 42 41 Dmod
    D6 13 41 Dmod
    D7 13 11 Dmod
    Rx 13 23 0.5
    L3 3 23 2E-9
    Rq 11 13  Rmod3 74E3
    *
    .MODEL Rmod1 RES (TC1=2.95E-3 TC2=-5E-7)
    .MODEL Rmod2 RES (TC1=8.5E-6 TC2=-3.3E-7)
    .MODEL Rmod3 RES (TC1=-2.5E-3 TC2=2E-5)
    .MODEL Dmod D IS=1E-14 RS=0.1 BV=22 CJO=0.1E-12
    .ENDS  ZR431
    *
    *$
    *


*TITLE=ZXRE060 MACROMODEL
*ORIGIN=DZSL_AG_GS
*SIMULATOR=DIODES, SIMETRIX and PSPICE
*DATE=3rd March 2011
*VERSION=1
*PIN_ORDER   1:PGND, 2:GND, 3:IN, 4:FB, 5:OUT
*
.subckt ZXRE060 PGND  GND  IN  FB  OUT
* pins-----------1----2----3----4---5      
*
*Voltage reference with temperature effect
E1      REFG  1    value={(0.6+1.72e-5*(TEMP-25)-1e-7*(TEMP-25)**2)*(0.5+0.5*tanh(4*(V(VCCL)-1.5)))}
I1	VCCL  1    0.48m  ; Supply current	
R1      REFG  inm  48k
R2      FB    inp  48k
C1      inm   inp  0.2p  
I3	VCCL  inp  45n ; input bias current
I4  	VCCL  inm  45n
*
*First amplifier, limited to internal 2V supply
E2      E2out 1    value={tanh(11.52*(V(inp)-V(inm)))}
R7	E2out C3p  1
C3	C3p   1    250n ;  600kHz first breakpoint
R3	C3p   int  10k
I2	VCCL  int  2.5u
C2	int   1    6p   ;  2MHz second breakpoint
*Second amplifier: transconductance
*with sink current output voltage limit of 0
*source current output voltage limit of 2V
G1      G1out 1    value={11e-6*(1-tanh(19.3*(v(int)-v(Q2e))))*tanh(10*max((V(G1out)-V(1)),0))}
G2      VCCL G1out value={11e-6*(1+tanh(19.3*(V(int)-V(Q2e))))*tanh(10*max(2-(V(G1out)-V(1)),0))}
*
*Output Stage
Q1	Q1c  G1out Q2b 1 NPNCT
R4	VCCL Q1c   250
R5	Q2b  PGNDL 50k
Q2	OUTL Q2b   Q2e 1 NPNCT 5
R6	Q2e  PGNDL 2.56
*
L1	IN   VCCL  2n
L2	GND  1     2n
L3	OUT  OUTL  2n
L4	PGND PGNDL 2n
*Output transistor model from CT
.model  NPNCT NPN  
+ is = 2.265f
+ nf = 1.000 
+ ise = 6.055f
+ ne = 1.562 
+ bf = 190.0 
+ ikf = 28.71m
+ vaf = 22.83 
+ nr = 1.008 
+ isc = 1.00000e-24
+ nc = 1.543 
+ br = 34.83 
+ ikr = 1.250m
+ var = 19.13 
+ rb = 267.9 
+ irb = 1.250m
+ rbm = 100.0m
+ re = 802.9m
+ rc = 164.1m
+ cje = 163.1f
+ vje = 1.200 
+ mje = 151.0m
+ tf = 70.00p
+ xtf = 10.00 
+ vtf = 30.00 
+ itf = 200.0m
+ ptf = 34.00 
+ cjc = 380.6f
+ vjc = 410.0m
+ mjc = 360.0m
+ xcjc = 50.00m
+ tr = 6.00n
+ cjs = 525.2f
+ vjs = 401.0m
+ mjs = 179.2m
+ xtb = 200.0m
+ xti = 5.100 
+ eg = 1.110 
+ fc = 950.0m
.ends ZXRE060
*
*                (c)  2011 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*ZETEX ZR431L Spice Model v1.0 Last Revised 21/10/05
    *
    *NOTE: This is a simplified model.  Do not rely on this model for 
    *validation of circuit stability.  It does not accurately replicate 
    *stability boundary conditions when the device is operated with 
    *additional load capacitance.  Check the circuit stability by normal 
    *breadboarding techniques.
    *
    .SUBCKT ZR431L 1 2 3
    *Connections  Vz Vref Gnd
    *
    *Input current
    Rin 2 3 Rmod1 1.127E7
    D1 3 2 Dmod1
    D2 2 1 Dmod1
    Cin 2 3 10E-12
    *
    *Quiescent current
    E1 50 3 2 3 1
    D8 50 51 Dmod1
    Rq 51 52 Rmod4 31E3
    Vq 52 3 0
    F1 1 3 Vq 1
    Ro 1 3 1.5E6
    *
    *Reference voltage
    Iref 3 21 1.2405E-3
    Rref 21 3 Rmod2 1000
    *
    *Voltage dependence
    G1 21 3 POLY(1) 1 3 0 1.57E-6 -0.97e-7
    *
    *Gain
    G2 3 31 2 21 1e-7
    Rt2  3 31 100E6
    Rt3  3 32 3E6
    Ct1 31 32 3E-13
    D3 31 3  Dmod1
    D4 3 31  Dmod1
    *
    *Output
    *Q1 5 42 3 Qmod1
    Cr1 7 31 1.5e-14
    G3 41 3 31 3 0.8
    Rc1 6 7 5
    Rc2 7 5 5
    D6 3 41 Dmod1
    D7 3 1 Dmod1
    L1 1 6 10nH
    D9 5 41 Dmod2
    *
    .MODEL Qmod1 NPN BF=220 CJC=3E-12 CJE=3E-12
    .MODEL Rmod1 RES (TC1=2.95E-3 TC2=-5E-7)
    .MODEL Rmod2 RES (TC1=1.5e-5 TC2=-3.5e-7)
    .MODEL Rmod3 RES (TC1=-2.5E-3 TC2=2E-5)
    .MODEL Rmod4 RES (TC1=1.7E-3 TC2=0)
    .MODEL Dmod1 D IS=5E-15 RS=4 BV=22
    .MODEL Dmod2 D IS=1E-18 RS=.01
    .ENDS  ZR431L
    *
    *$
    *


*ZETEX ZRC250 Spice Model v1.0 Last Revised 11/07/06
    *
    *NOTE: This is a simplified model.  Confirm
    *any design using a physical circuit.
    *
    .SUBCKT ZRC250 1 3
    *Connections  Vz Gnd
    *
    *Quiescent current
    R1 1 49 320E3
    R2 49 3 315.2E3
    C1 49 1 4.5e-12
    E1 50 3 49 3 1
    D8 50 51 Dmod1
    Rq 51 52 Rmod2 70E3
    Vq 52 3 0
    F1 1 3 Vq 1
    *
    *Reference voltage
    Iref 3 21 1.2405E-3
    Rref 21 3 Rmod1 1000
    *
    *Gain
    G2 3 31 49 21 1e-7
    Rt2  3 31 100E6
    Rt3  3 32 3E6
    Ct1 31 32 1.5E-13
    D3 31 3  Dmod1
    D4 3 31  Dmod1
    *
    *Output
    G3 41 3 31 3 0.3
    Rc1 6 5 10
    D6 3 41 Dmod1
    D7 3 6 Dmod1
    L1 1 6 10nH
    D9 5 41 Dmod2
    *
    .MODEL Qmod1 NPN BF=220 CJC=3E-12 CJE=3E-12
    .MODEL Rmod1 RES (TC1=3.8e-5 TC2=-1e-7)
    .MODEL Rmod2 RES (TC1=1.7E-3 TC2=0)
    .MODEL Dmod1 D IS=5E-15 RS=4 BV=22
    .MODEL Dmod2 D IS=1E-18 RS=.01
    .ENDS  ZRC250
    *
    *$
    *


*TITLE=ZXCT1030 MACROMODEL
*ORIGIN=DZSL_AG_GS
*SIMULATOR=DIODES, SIMETRIX and PSPICE
*DATE=14th June 2010
*VERSION=1
*PIN_ORDER   1:VCC, 2:VS-, 3:VS+, 4:GND, 5:COMPIN, 6:REF, 7:OUT, 8:COMPOUT
*
.subckt ZXCT1030 VCC VS- VS+ GND COMPIN REF OUT COMPOUT
* pins------------1--2----3---4---5------6---7----8      
*
*Voltage reference
R1         REFG REF  34
V1         REFG  GND 1.24
*
* Current sense amplifier limited by supply voltage
R2         GND VCC  58k        ;quiescent current at 5V
R3         VS- AIN-  100k         ;input filter
C1         VS+ AIN- 1p        ;input filter
G1    VS+ OUT VALUE={ max(V(VS+)-V(AIN-),0)/150*tanh ( 20*max(V(VS+)-1.1-V(OUT),0) ) }
R4         OUT GND  1.5k       ;output resistance
*
*Comparator with VS- undervoltage detection and limited by supply voltage
E2         DELTA GND VALUE = { V(OUT)-V(COMPIN)+0.015*V(E3OUT) }
R5         DELTA  COMPINT  1k   ; delay filter
C2         COMPINT  GND  150p   ; delay filter
E3      E3OUT GND VALUE={ 0.5*(1+tanh(V(COMPINT)*10000)) }
E4  S1IN GND VALUE={ ( V(E3OUT)+tanh(20*max(2.1-V(VS-),0)) )*tanh(20*max(V(VCC)-2.1,0)) }
*
*Output transistor open collector
S1         COMPOUT GND S1IN GND _S1
.MODEL       _S1 VSWITCH Roff=10e6 Ron=300 Voff=0.25 Von=0.75
*
.ends ZXCT1030
*
*                (c)  2010 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*
*


*
*Zetex ZXCT1080 Spice Model v2.0 Last Revised 28/04/08
*
.SUBCKT ZXCT1080 1 2 3 4 5
* 
*Pins = Gnd, Vcc, S+, S-, Vout
*
R1 2 1 1E6
R2 4 1 1E8
R3 13 14 1000
R4 15 5 Rmod1 3.5
R5 16 12 9
R6 12 1 Rmod2 1
R7 3 1 1E6
R8 21 22 Rmod3 1
C1 14 1 3E-10
E1 16 1 value={((V(3)-V(4))*100)+(V(3)/466*(V(3)-V(4))+((V(2)-5)/100)+0.025+(V(21)*10))}
E2 13 1 value={V(12)-((V(12)-V(2))*(TANH((V(12)-V(2))*110)+1)/2)}
E3 15 1 value={V(14)*((TANH(V(14)*100)+1)/2)}
I1 1 21 1
V1 1 22 1
.MODEL Rmod1 RES (TC1=6e-3 )
.MODEL Rmod2 RES (TC1=5e-6 )
.MODEL Rmod3 RES (TC1=5e-5 )
.ENDS ZXCT1080
*
*$
*
*                (c)  2008 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA


*ZETEX ZXCT1009F Spice Model v2.1 Last revision 02/02/07
    *
    *
    .SUBCKT ZXCT1009F 1 2 3
    *
    *Pins 1.Load 2.Vin 3.Iout
    *
    I1 4 3 4uA
    R6 4 3 20E6
    R1 2 4 Rmod1 1
    Q1 4 5 3 LargeN
    C1 5 11 3E-9
    R5 11 3 10
    R2 5 6 10E3
    D1 6 8 Dmod
    R3 7 6 1
    V2 8 3 10
    E1 7 3 4 9 1000
    V1 10 1 100e-3
    I2 9 10 100E-3
    R4 9 10 Rmod2 1
    .MODEL Dmod D IS=1E-15 BV=20 IBV=1E-3 
    .MODEL LargeN NPN IS=3.8E-16 LOT/1/UNIFORM=50% DEV/GAUSS=1%
    + BF=220 LOT/1/UNIFORM=50% DEV/GAUSS=1% NK=.75 IKF=17e-3 VAF=60
    + ISE=1.8E-16 NE=1.4 BR=.7 IKR=3e-2 VAR=7 ISC=5E-12 NC=1.321 RB=300
    + RE=19.7 RC=63.4 CJC=51E-12 MJC=.42 VJC=.595 CJE=.21E-12 MJE=.33
    + VJE=.7 TF=1.5E-10 TR=6E-9 XTF=0.3 VTF=6 ITF=5E-5 XTB=1.17 XTI=5.4
    + KF=2E-13 AF=1.4
    .MODEL Rmod1 RES (R=99.5 TC1=1E-3 TC2=1E-5 LOT/1/UNIFORM=1% DEV/GAUSS=0.5%)
    .MODEL Rmod2 RES (R=1 LOT/1/UNIFORM=1% DEV/GAUSS=0.5%)
    .ENDS 
    *
    *$
    *


*TITLE=ZXCT1010 MACROMODEL
*ORIGIN=DZSL_AG_GS
*SIMULATOR=DIODES, SIMETRIX and PSPICE
*DATE=14th July 2010
*VERSION=1
*PIN_ORDER     2:GND, 3:OUT, 4:S+, 5:S-   (Pin 1 is NC)
*
.subckt ZXCT1010 GND OUT S+ S-
* pins------------2---3--4--5
*      
R1  S- FILT  100k      ;input filter
C1  S+ FILT  20p       ;input filter
R2  S+ GND  1Meg       ;quiescent current at 5V
*  Output as a voltage: first part of expression limits resonse to zero for negative input
*  tanh function limits output when supply is less than 1.1V above Vout  
E1  E1OUT GND VALUE={ max(V(S+)-V(FILT),0)*tanh( 20*max(V(S-)-1.1-V(OUT),0) ) }
R3  E1OUT GND 1Meg
*  Transconductance = 1/100 A/V, with temperature dependence
G1  S+  OUT VALUE={(V(E1OUT) - V(GND))*(1/100)*(1.01-0.0003*TEMP-6e-6*(TEMP**2)-5e-8*(TEMP**3)+2.7e-10*(TEMP**4))}  
.ends ZXCT1010
*
*
*                (c)  2010 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*
*


*TITLE=ZXCT1082 MACROMODEL
*ORIGIN=DZSL_AG_GS
*SIMULATOR=DIODES, SIMETRIX and PSPICE
*DATE=1st Sept 2011
*VERSION=2
*PIN_ORDER   1:OUT  2:GND, 3:S+, 4:S-, 5:VCC

*Does not include temperature dependence of offset error, gain or input current.
*Includes roughly approximated temperature effect of low voltage operating knee of VS- and VCC. 

.subckt ZXCT1082 OUT GND  S+  S- VCC
* pins------------1---2---3---4---5
      
.PARAM VTH1 = {1-0.004*(TEMP-25)}
.PARAM KG ={1e-4/(2-VTH1)**2} ; rnom/(VON-VTH1)^2
D1  S+ 1 DHM
D2  1  S- DHM
D3  S- 2 DHM
D4  2  S+ DHM
D7  GND VCC DHM
D8  GND S- DHM
D9  GND S+ DHM

*input current typ 1.7uA at Vcc=VS+=12V
G1  S+ GND value={(1.4u+((V(VCC)-V(GND)-4)/42e6)+((V(S+)-V(GND))/6e8))
+ *0.25*(1+tanh(10*(V(VCC)-V(GND)-3.5)))*(1+tanh(20*(V(S+)-V(GND)-1)))}
G2  S- GND value={(1.4u+((V(VCC)-V(GND)-4)/42e6)+((V(S+)-V(GND))/6e8))
+ *0.25*(1+tanh(10*(V(VCC)-V(GND)-3.5)))*(1+tanh(20*(V(S+)-V(GND)-1)))}
R1  S+ FILT 10k      ;input filter
C1  FILT S- 1pf       ;input filter 
R2  VCC GND  3.75Meg   ;Vcc quiescent current, typ 16uA at 60V
G3  S- SIN VALUE={0.1*((1+tanh(10*(V(S-)-V(FILT))))*tanh(50*max(V(S-)-V(SIN),0))
+ +(-1+tanh(10*(V(S-)-V(FILT))))*tanh(50*max(V(SIN)-V(GND),0)))
+ *tanh(20*max(V(VCC)-VTH1,0))}
C5  S- GND 3p
C6  S+ GND 2p
C4  SIN FILT 100f
R3  S+ SIN 1G
C2  SIN S+ 500f
R6  S+ S+A 1k
G4  S+A OUT VALUE={KG*(max(V(S+A)-V(SIN)-VTH1,0)**2)*(V(S+A)-V(OUT))}
R4  S+ OUT 8G
C3  SIN OUT 80f
C7  OUT GND 1.25p
* zener diode
D5  SIN S+ DHM
D6  S+  Z1 DHM
I1  SIN Z1 0.192
RZ  Z1 SIN 100

.model DHM D IS=6.3E-16 BV=65
.ends ZXCT1082
*
*                (c)  2011 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition or warranty as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Incorporated, 4949 Hedgcoxe Road, Suite 200, Plano, TX 75024, USA


*ZETEX ZXCT1008F Spice Model v1.0 Last revision 15/08/07
    *
    *
    .SUBCKT ZXCT1008F 1 2 3
    *
    *Pins 1.Load 2.Vin 3.Iout
    *
    I1 4 3 4uA
    R6 4 3 20E6
    R1 2 4 Rmod1 1
    Q1 4 5 3 LargeN
    C1 5 11 3E-9
    R5 11 3 10
    R2 5 6 10E3
    D1 6 8 Dmod
    R3 7 6 1
    V2 8 3 10
    E1 7 3 4 9 1000
    V1 10 1 100e-3
    I2 9 10 100E-3
    R4 9 10 Rmod2 1
    .MODEL Dmod D IS=1E-15 BV=20 IBV=1E-3 
    .MODEL LargeN NPN IS=3.8E-16 LOT/1/UNIFORM=50% DEV/GAUSS=1%
    + BF=220 LOT/1/UNIFORM=50% DEV/GAUSS=1% NK=.75 IKF=17e-3 VAF=60
    + ISE=1.8E-16 NE=1.4 BR=.7 IKR=3e-2 VAR=7 ISC=5E-12 NC=1.321 RB=300
    + RE=19.7 RC=63.4 CJC=51E-12 MJC=.42 VJC=.595 CJE=.21E-12 MJE=.33
    + VJE=.7 TF=1.5E-10 TR=6E-9 XTF=0.3 VTF=6 ITF=5E-5 XTB=1.17 XTI=5.4
    + KF=2E-13 AF=1.4
    .MODEL Rmod1 RES (R=99.5 TC1=1E-3 TC2=1E-5 LOT/1/UNIFORM=1% DEV/GAUSS=0.5%)
    .MODEL Rmod2 RES (R=1 LOT/1/UNIFORM=1% DEV/GAUSS=0.5%)
    .ENDS 
    *
    *$
    *


*SRC=DMN3052L;DI_DMN3052L;MOSFETs N;Enh;30.0V 5.40A 32.0mohms  Diodes Inc MOSFET
*SYM=POWMOSN
.SUBCKT DI_DMN3052L   10 20 30
*     TERMINALS:  D  G  S
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  14.2m
RS  40  3  1.80m
RG  20  2  27.8
CGS  2  3  473p
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  374p
R1  13  0  1.00
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1.00
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.50n
.MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m
+ ETA=2.00m VTO=1.20 KP=40.0
.MODEL DCGD D (CJO=374p VJ=0.600 M=0.680
.MODEL DSUB D (IS=22.4n N=1.50 RS=83.3m BV=30.0
+ CJO=125p VJ=0.800 M=0.420 TT=234n
.MODEL DLIM D (IS=100U)
.ENDS


*SRC=DMN3112S;DI_DMN3112S;MOSFETs N;Enh;30.0V 5.80A 57.0mohms  Diodes Inc MOSFET
*SYM=POWMOSN
.SUBCKT DI_DMN3112S   10 20 30
*     TERMINALS:  D  G  S
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  26.1m
RS  40  3  2.42m
RG  20  2  105
CGS  2  3  218p
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  228p
R1  13  0  1.00
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1.00
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.50n
.MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m
+ ETA=2.00m VTO=2.20 KP=10.2
.MODEL DCGD D (CJO=228p VJ=0.600 M=0.680
.MODEL DSUB D (IS=24.1n N=1.50 RS=60.3m BV=30.0
+ CJO=83.9p VJ=0.800 M=0.420 TT=239n
.MODEL DLIM D (IS=100U)
.ENDS


*
*Zetex ZVN4424Z Spice Model v1 Last Revised 28/7/08
*
.SUBCKT ZVN4424Z 3 4 5
*------connections-------D-G-S
M1 6 2 8 8 N4424AM
M2 6 2 8 8 N4424AMS
RG 4 2 35
RD 3 6 3.6
RS 8 5 0.15 
RL 3 5 240E6
D1 5 3 N4424AD
Egs2 13 8 2 8 1
Eds1 14 8 6 8 1
C1 2 8 145E-12
C2 2 3  11E-12
C3 15 14 235E-12 
C4 16 8 226E-12
S1 2 15 14 13 SMOD1
S2 13 15 14 13 SMOD2
S3 16 13 13 8 SMOD3
S4 16 2 13 8 SMOD4
.MODEL SMOD1 VSWITCH RON=.001 ROFF=100  VON=1 VOFF=2
.MODEL SMOD2 VSWITCH RON=.001 ROFF=100  VON=2 VOFF=1
.MODEL SMOD3 VSWITCH RON=.001 ROFF=100  VON=-3 VOFF=-4
.MODEL SMOD4 VSWITCH RON=.001 ROFF=100  VON=-4 VOFF=-3
.MODEL N4424AM NMOS VTO=1.3 IS=1E-15 KP=0.85
+CBD=66.2E-12 PB=1
.MODEL N4424AMS NMOS VTO=.86 IS=1E-15 KP=0.0085
+CBD=.66E-12 PB=1
.MODEL N4424AD D IS=5.516E-13 RS=.2084 N=1.0078
.ENDS ZVN4424Z
*
*$
*
*                (c)  2008 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA


*ZETEX ZVP4105A Spice Model v1.0 Last Revised 31/3/05
    *              
    .SUBCKT ZVP4105A 3 4 5
    * NODES: DRAIN GATE SOURCE
    M1 3 2 5 5 MOD1
    RG 4 2 167
    RL 3 5 50E6
    C1 2 5 26P
    C2 3 2 4P 
    D1 3 5 DIODE1
    *
    .MODEL MOD1 PMOS VTO=-1.709 RS=3.091 RD=0.979 IS=1E-15 KP=0.146
    +CBD=12P PB=1
    .MODEL DIODE1 D IS=1.072E-13 RS=0.527 N=1.077
    .ENDS ZVP4105A
    *
    *$
    *


*SRC=MBR1030;DI_MBR1030;Diodes;Si;  30.0V  10.0A  5.00ns   Diodes Inc. Schottky Barrier Rectifier
.MODEL DI_MBR1030 D  ( IS=2.62m RS=4.20m BV=30.0 IBV=100u
+ CJO=796p  M=0.333 N=2.12 TT=7.20n )


*SRC=MBR1635;DI_MBR1635;Diodes;Si;  35.0V  16.0A  5.00ns   Diodes Inc. Schottky
.MODEL DI_MBR1635 D  ( IS=138u RS=2.62m BV=35.0 IBV=31.0u
+ CJO=862p  M=0.333 N=1.53 TT=7.20n )


*SRC=MBR1640;DI_MBR1640;Diodes;Si;  40.0V  16.0A  5.00ns   Diodes Inc. Schottky
.MODEL DI_MBR1640 D  ( IS=138u RS=2.62m BV=40.0 IBV=31.0u
+ CJO=862p  M=0.333 N=1.53 TT=7.20n )


*SRC=SBL3030CT;DI_SBL3030CT;Diodes;Si;  30.0V  30.0A  10.0ns   Diodes Inc. Schottky - Single device of dual
.MODEL DI_SBL3030CT D  ( IS=200u RS=1.92m BV=30.0 IBV=1.00m
+ CJO=809p  M=0.333 N=1.42 TT=14.4n )


*SRC=SBL3040CT;DI_SBL3040CT;Diodes;Si;  40.0V  30.0A  10.0ns   Diodes Inc. Schottky - Single device of dual
.MODEL DI_SBL3040CT D  ( IS=200u RS=1.92m BV=40.0 IBV=1.00m
+ CJO=809p  M=0.333 N=1.42 TT=14.4n )


*SRC=SBL4030PT;DI_SBL4030PT;Diodes;Si;  30.0V  40.0A  10.0ns   Diodes Inc. Schottky - Single device of dual
.MODEL DI_SBL4030PT D  ( IS=10.9u RS=1.53m BV=30.0 IBV=1.00m
+ CJO=1.33n  M=0.333 N=1.08 TT=14.4n )


*SRC=SBL4035PT;DI_SBL4035PT;Diodes;Si;  35.0V  40.0A  10.0ns   Diodes Inc. Schottky - Single device of dual
.MODEL DI_SBL4035PT D  ( IS=10.9u RS=1.53m BV=35.0 IBV=1.00m
+ CJO=1.33n  M=0.333 N=1.08 TT=14.4n )


*SRC=SBL4040PT;DI_SBL4040PT;Diodes;Si;  40.0V  40.0A  10.0ns   Diodes Inc. Schottky - Single device of dual
.MODEL DI_SBL4040PT D  ( IS=10.9u RS=1.53m BV=40.0 IBV=1.00m
+ CJO=1.33n  M=0.333 N=1.08 TT=14.4n )


*SRC=SBL4045PT;DI_SBL4045PT;Diodes;Si;  45.0V  40.0A  10.0ns   Diodes Inc. Schottky - Single device of dual
.MODEL DI_SBL4045PT D  ( IS=10.9u RS=1.53m BV=45.0 IBV=1.00m
+ CJO=1.33n  M=0.333 N=1.08 TT=14.4n )


*SRC=SBL4050PT;DI_SBL4050PT;Diodes;Si;  50.0V  40.0A  10.0ns   Diodes Inc. Schottky - Single device of dual
.MODEL DI_SBL4050PT D  ( IS=53.0u RS=1.26m BV=50.0 IBV=1.00m
+ CJO=1.33n  M=0.333 N=1.70 TT=14.4n )


*SRC=SBL4060PT;DI_SBL4060PT;Diodes;Si;  60.0V  40.0A  10.0ns   Diodes Inc. Schottky - Single device of dual
.MODEL DI_SBL4060PT D  ( IS=53.0u RS=1.26m BV=60.0 IBV=1.00m
+ CJO=1.33n  M=0.333 N=1.70 TT=14.4n )


*SRC=DMN3052LSS;DI_DMN3052LSS;MOSFETs N;Enh;30.0V 7.10A 30.0mohms  DIodes Inc MOSFET
*SYM=POWMOSN
.SUBCKT DI_DMN3052LSS   10 20 30
*     TERMINALS:  D  G  S
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  13.2m
RS  40  3  1.75m
RG  20  2  21.1
CGS  2  3  471p
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  384p
R1  13  0  1.00
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1.00
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.50n
.MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m
+ ETA=2.00m VTO=1.20 KP=38.0
.MODEL DCGD D (CJO=384p VJ=0.600 M=0.680
.MODEL DSUB D (IS=29.5n N=1.50 RS=57.7m BV=30.0
+ CJO=125p VJ=0.800 M=0.420 TT=254n
.MODEL DLIM D (IS=100U)
.ENDS


*SRC=DMN3112SSS;DI_DMN3112SSS;MOSFETs N;Enh;30.0V 6.00A 57.0mohms  Diodes Inc MOSFET
*SYM=POWMOSN
.SUBCKT DI_DMN3112SSS   10 20 30
*     TERMINALS:  D  G  S
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  26.1m
RS  40  3  2.42m
RG  20  2  56.0
CGS  2  3  218p
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  458p
R1  13  0  1.00
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1.00
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.50n
.MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m
+ ETA=1.93m VTO=2.20 KP=4.11
.MODEL DCGD D (CJO=458p VJ=0.600 M=0.680
.MODEL DSUB D (IS=24.9n N=1.50 RS=75.0m BV=30.0
+ CJO=128p VJ=0.800 M=0.420 TT=239n
.MODEL DLIM D (IS=100U)
.ENDS


*---------- DMG8880LSS Spice Model ----------.SUBCKT DMG8880LSS 10 20 30 *     TERMINALS:  D  G  SM1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 RD 10 1 0.004237 RS 30 3 0.001 RG 20 2 0.97 CGS 2 3 1.154E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1  VFB 1 CGD 13 14 1.22E-009 R1 13 0 1 D1 12 13  DLIM DDG 15 14  DCGD R2 12 15 1 D2 15 0  DLIM DSD 3 10  DSUB .MODEL NMOS NMOS  LEVEL = 3  VMAX = 9.897E+005  ETA = 4.441E-017  VTO = 2.123 + TOX = 6E-008  NSUB = 1E+017  KP = 68.03  KAPPA = 416.1  U0 = 202.1 .MODEL DCGD D  CJO = 7.076E-010  VJ = 0.225  M = 0.3502 .MODEL DSUB D  IS = 2.798E-010  N = 1.195  RS = 0.003607  BV = 35  CJO = 1.85E-010  VJ = 0.7412  M = 0.6747 .MODEL DLIM D  IS = 0.0001 .ENDS*Diodes DMG8880LSS Spice Model v1.0 Last Revised 2010/9/21


*---------- DMC3018LSD Spice Model ----------

*NMOS
.SUBCKT DMC3018LSD_N 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.005805 
RS 30 3 0.001 
RG 20 2 1.32 
CGS 2 3 6.922E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 9.2E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0.0143  VTO = 2.028 
+ TOX = 6E-008  NSUB = 1E+017  KP = 21.95  KAPPA = 105  U0 = 200 
.MODEL DCGD D  CJO = 4.611E-010  VJ = 0.3568  M = 0.4267 
.MODEL DSUB D  IS = 2.567E-010  N = 1.254  RS = 0.01257  BV = 35  CJO = 8.267E-011  VJ = 0.4558  M = 0.5515 
.MODEL DLIM D  IS = 0.0001 
.ENDS


*PMOS
.SUBCKT DMC3018LSD_P 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.02496 
RS 30 3 0.001 
RG 20 2 11.1 
CGS 2 3 8.938E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 8.92E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 2.425E+005 KP = 27.53 ETA = 0.0001 
+ TOX = 6E-008 NSUB = 1E+017 KAPPA = 2.932 VTO = -1.9 
.MODEL DCGD D CJO = 4.013E-010 VJ = 0.3844 M = 0.3457 
.MODEL DSUB D IS = 2.245E-010 N = 1.343 RS = 0.01819 
+ BV = 35 CJO = 7.964E-011 VJ = 3.068 M = 0.9583 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMC3018LSD Spice Model v2.0 Last Revised 2012/8/6


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=22/02/2005
*VERSION=2
*PIN_ORDER         D G S
*
.SUBCKT ZXMN2A02X8 30 40 50
M1 6 2 7 7 Nmod L=1.16E-6 W=2.3
M2 7 2 7 6 Pmod L=1.3E-6 W=1.3
RG 4 2 1
RIN 2 5 1E12
RD 3 6 Rdmod 0.0045
RS 7 5 Rdmod 0.01
RL 3 5 3E9
C1 2 5 10E-12
C2 3 2 5E-12
D1 5 3  Dbodymod
LD 3 30 1.5E-9
LG 4 40 1.0E-9
LS 5 50 1.0E-9
.MODEL Nmod NMOS (LEVEL=3 TOX=4.5E-8 NSUB=10E16
+VTO=1.365 KP=3.6E-5 NFS=2E11 KAPPA=0.1 UO=650 IS=1E-15 N=10)
.MODEL Pmod PMOS (LEVEL=3 TOX=4.5E-8 NSUB=1.5E16
+TPG=-1 IS=1E-15 N=10)
.MODEL Dbodymod D (IS=2E-11 RS=.015 XTI=1.5 TRS1=1.5e-3 TT=7e-9
+CJO=450e-12 BV=22)
.MODEL Rdmod RES (TC1=3e-3 TC2=6E-6)
.ENDS
*
*$


*SRC=DNLS160;DI_DNLS160;BJTs NPN; Si;  60.0V  1.00A  300MHz    
.MODEL DI_DNLS160  NPN (IS=3.69f NF=1.00 BF=322 VAF=139
+ IKF=0.989 ISE=6.05f NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=1.50 RE=48.0m RB=0.192 RC=19.2m
+ XTB=1.5 CJE=120p VJE=1.10 MJE=0.500 CJC=20.8p VJC=0.300
+ MJC=0.300 TF=480p TR=83.0n EG=1.12 )


*SRC=DNLS160V;DI_DNLS160V;BJTs NPN; Si;  60.0V  1.00A  300MHz    
.MODEL DI_DNLS160V  NPN (IS=3.69f NF=1.00 BF=322 VAF=139
+ IKF=0.989 ISE=6.05f NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=1.50 RE=48.0m RB=0.192 RC=19.2m
+ XTB=1.5 CJE=120p VJE=1.10 MJE=0.500 CJC=20.8p VJC=0.300
+ MJC=0.300 TF=480p TR=83.0n EG=1.12 )


*
.MODEL FZTA42 NPN IS =5E-14 NF =1 BF =230 IKF=250E-3
+VAF=610 ISE=9E-15 NE =1.28 RCO=75 GAMMA=3.1E-7
+NR =1 BR =5 VAR=45 ISC=5e-12 NC =1.3 
+RB =7 RE =0.07 RC =0.07 QUASIMOD=1
+CJC=9.26E-12 MJC=0.241 VJC=0.3905 CJE=68.6E-12 
+TF =1.1E-9 TR =0.9e-6 XTB=1.4 
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=27JUL2010
*VERSION=2
*
.MODEL ZXTN5551Z NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14
+ NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23
+ CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9
+ TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=18/09/2014
*VERSION=1


.SUBCKT DMG4406LSS 10 20 30
M1 1 2 3 3  Nmod1
RD 10 1 Rmod1 5E-3
RS 23 3 Rmod1 4E-3
RG 20 22 5
RIN 20 23 2E11
RDS 10 23 6E9
CGS 2 3 1250E-12 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 1250E-12 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 23 10  DSUB
EL 2 22 1 3 0.0015
LS  30 23  1n
.MODEL Nmod1 NMOS (LEVEL=3 VTO=2.1 TOX=5.8E-8 NSUB=3E+16 KP=130 NFS=1E+12 IS=.5E-15 N=10)
.MODEL DCGD D (CJO =260E-12  VJ = 0.5  M = 0.43 T_ABS=25)
.MODEL DSUB D (IS = 1E-12 N=1.025 RS=0.002 BV=35 CJO=400E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=2E-3)
.MODEL DLIM D (IS=100U N=1 T_ABS=25)
.MODEL Rmod1 RES (TC1=.1e-3 TC2=12E-6)
.ENDS



*                     (c)  2014 Diodes Inc
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*



*DIODES_INC_SPICE_MODEL PD3Z284C5V6
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=02/10/15
*VERSION=1
*PINS 1=A 2=K

.SUBCKT PD3Z284C5V6  1 2
*        Terminals    A   K
D1 1 2 DF
DR 3 1 DR
VZ 2 3 3
.MODEL DF D ( IS=24f RS=.3 N=1.1
+ CJO=84p VJ=0.66 M=0.330 TT=50.1n BV=5.7 IBV=1m TBV1=.281m)
.MODEL DR D ( IS=8f RS=12k N=2 EG=1.4)
.ENDS


*                (c)  2015 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*SRC=SDM6CC;DI_SDM6CC;Diodes;Si;  30.0V  0.200A  1.30ns   Diodes INC Schottky Diode
.MODEL DI_SDM6CC D  ( IS=2.73u RS=0.653 BV=30.0 IBV=700n
+ CJO=5.30p  M=0.333 N=1.98


*ZETEX ZTX601 Spice Model v1.0 Last Revised 23/12/04
    *
    .SUBCKT ZTX601 1 2 3
    *               C B E
    Q1 1 2 4 SUB601
    Q2 1 4 3 SUB601 2.74
    *
    .MODEL SUB601 NPN IS=8.354E-14 BF=70 VAF=18.3 IKF=0.25 ISE=2E-13
    +NE=1.45 BR=2 VAR=6.5 NR=1 IKR=0.2 ISC=6.138E-13 NC=1.46 RB=0.5 RE=0.25
    +RC=0.3 CJE=83.7E-12 VJE=0.6868 MJE=0.3362 CJC=8.6E-12 VJC=0.3679
    +MJC=0.3607 TF=1E-9 TR=1800E-9
    .ENDS ZTX601
    *
    *$
    *


*ZETEX ZTX601B Spice Model v1.0 Last Revised 9/5/94
    *
    .SUBCKT ZTX601B 1 2 3
    *               C B E
    Q1 1 2 4 SUB601B
    Q2 1 4 3 SUB601B 2.74
    *
    .MODEL SUB601B NPN IS=8.354E-14 BF=130 VAF=18.3 IKF=0.2 ISE=2E-13
    +NE=1.45 BR=2 VAR=6.5 NR=1 IKR=0.2 ISC=6.138E-13 NC=1.46 RB=0.5 RE=0.25
    +RC=0.3 CJE=83.7E-12 VJE=0.6868 MJE=0.3362 CJC=8.6E-12 VJC=0.3679 MJC=0.3607 
    +TF=1E-9 TR=1800E-9
    .ENDS ZTX601B
    *
    *$
    *


*SRC=SBL1030;DI_SBL1030;Diodes;Si;  30.0V  10.0A  5.00ns   Diodes Inc. Schottky 
.MODEL DI_SBL1030 D  ( IS=759u RS=4.20m BV=30.0 IBV=1.00m
+ CJO=2.12n  M=0.333 N=1.70 TT=7.20n )


*SRC=SBL1060;DI_SBL1060;Diodes;Si;  60.0V  10.0A  5.00ns   Diodes Inc. Schottky 
.MODEL DI_SBL1060 D  ( IS=210u RS=4.22m BV=60.0 IBV=1.00m
+ CJO=2.12n  M=0.333 N=2.03 TT=7.20n )


*SRC=SBL1035;DI_SBL1035;Diodes;Si;  35.0V  10.0A  5.00ns   Diodes Inc. Schottky 
.MODEL DI_SBL1035 D  ( IS=759u RS=4.20m BV=35.0 IBV=1.00m
+ CJO=2.12n  M=0.333 N=1.70 TT=7.20n )


*SRC=SBL1040;DI_SBL1040;Diodes;Si;  40.0V  10.0A  5.00ns   Diodes Inc. Schottky 
.MODEL DI_SBL1040 D  ( IS=759u RS=4.20m BV=40.0 IBV=1.00m
+ CJO=2.12n  M=0.333 N=1.70 TT=7.20n )


*SRC=SBL1045;DI_SBL1045;Diodes;Si;  45.0V  10.0A  5.00ns   Diodes Inc. Schottky 
.MODEL DI_SBL1045 D  ( IS=759u RS=4.20m BV=45.0 IBV=1.00m
+ CJO=2.12n  M=0.333 N=1.70 TT=7.20n )


*SRC=SBL1050;DI_SBL1050;Diodes;Si;  50.0V  10.0A  5.00ns   Diodes Inc. Schottky 
.MODEL DI_SBL1050 D  ( IS=210u RS=4.22m BV=50.0 IBV=1.00m
+ CJO=2.12n  M=0.333 N=2.03 TT=7.20n )


*SRC=1N5401;DI_1N5401;Diodes;Si;  100V  3.00A  3.00us   Diodes Inc. Standard Rectifier 
.MODEL DI_1N5401 D  ( IS=63.0n RS=14.1m BV=100 IBV=10.0u 
+ CJO=125p  M=0.333 N=1.70 TT=4.32u )


*SRC=1N5402;DI_1N5402;Diodes;Si;  200V  3.00A  3.00us   Diodes Inc. Standard Rectifier 
.MODEL DI_1N5402 D  ( IS=63.0n RS=14.1m BV=200 IBV=10.0u 
+ CJO=125p  M=0.333 N=1.70 TT=4.32u )


*SRC=1N5404;DI_1N5404;Diodes;Si;  400V  3.00A  3.00us   Diodes Inc. Standard Rectifier 
.MODEL DI_1N5404 D  ( IS=63.0n RS=14.1m BV=400 IBV=10.0u 
+ CJO=125p  M=0.333 N=1.70 TT=4.32u )


*SRC=1N5406;DI_1N5406;Diodes;Si;  600V  3.00A  3.00us   Diodes Inc. Standard Rectifier 
.MODEL DI_1N5406 D  ( IS=63.0n RS=14.1m BV=600 IBV=10.0u 
+ CJO=53.0p  M=0.333 N=1.70 TT=4.32u )


*SRC=1N5407;DI_1N5407;Diodes;Si;  800V  3.00A  3.00us   Diodes Inc. Standard Rectifier 
.MODEL DI_1N5407 D  ( IS=63.0n RS=14.1m BV=800 IBV=10.0u 
+ CJO=53.0p  M=0.333 N=1.70 TT=4.32u )


*SRC=1N5408;DI_1N5408;Diodes;Si;  1.00kV  3.00A  3.00us   Diodes Inc. Standard Rectifier 
.MODEL DI_1N5408 D  ( IS=63.0n RS=14.1m BV=1.00k IBV=10.0u 
+ CJO=53.0p  M=0.333 N=1.70 TT=4.32u )


*SRC=1N5400;DI_1N5400;Diodes;Si;  50.0V  3.00A  3.00us   Diodes Inc. Standard Rectifier 
.MODEL DI_1N5400 D  ( IS=63.0n RS=14.1m BV=50.0 IBV=10.0u 
+ CJO=125p  M=0.333 N=1.70 TT=4.32u )


*ZETEX ZXCL280 Spice Model v1.0 Last revision 13/12/06
    *
    *NOTE: This is a simplified model not all features are modeled.
    *
    .subckt ZXCL280  1 2 3 4
    * NODES: GND EN VIN VOUT
    M1 4 8 3 3 MOD1
    C1 8 3 126E-12
    C2 4 8 20E-12 
    C3 1 10 130E-12 
    C4 1 11 2E-9
    C5 1 15 10E-9  
    C6 13 1 400E-12 
    D1 4 3 Dmod1
    D2 5 7 Dmod2
    D3 1 5 Dmod2
    R1 4 9 63.25E3
    R2 9 1 50E3
    R30 5 6 10E3
    R3 10 5 3000
    R4 11 5 180E3
    R5 15 5  2E6
    R6 2 13 1E6
    R7 2 1 55E6
    R8 3 4 50E6
    R9 5 8 34
    R10 1 12 Rmod1 1 
    S1 3 5 13 1 Smod1
    E1 3 6 12 9 100
    E2 7 1 3 1 1.0
    I1 1 12 1.25
    .MODEL MOD1 PMOS (VTO=-0.82 RS=0.6 RD=0.2 IS=1E-15 KP=0.73 CBD=60E-12 KF=2e-19 AF=1.22)
    .MODEL Dmod1 D (IS=1E-13 RS=0.5 N=1)
    .MODEL Dmod2 D (IS=1E-13 RS=0.1 N=0.5)
    .MODEL Rmod1 RES (TC1=-3E-5 TC2=-1E-7)
    .MODEL Smod1 VSWITCH (RON=1 ROFF=1E6  VON=0 VOFF=1) 
    .ENDS ZXCL280
    *
    *$
    *


*ZETEX ZXCL300 Spice Model v1.0 Last revision 13/12/06
    *
    *NOTE: This is a simplified model not all features are modeled.
    *
    .subckt ZXCL300  1 2 3 4
    * NODES: GND EN VIN VOUT
    M1 4 8 3 3 MOD1
    C1 8 3 126E-12
    C2 4 8 20E-12 
    C3 1 10 130E-12 
    C4 1 11 2E-9
    C5 1 15 10E-9  
    C6 13 1 400E-12 
    D1 4 3 Dmod1
    D2 5 7 Dmod2
    D3 1 5 Dmod2
    R1 4 9 71.4E3
    R2 9 1 50E3
    R30 5 6 10E3
    R3 10 5 3000
    R4 11 5 180E3
    R5 15 5  2E6
    R6 2 13 1E6
    R7 2 1 55E6
    R8 3 4 50E6
    R9 5 8 34
    R10 1 12 Rmod1 1 
    S1 3 5 13 1 Smod1
    E1 3 6 12 9 100
    E2 7 1 3 1 1.0
    I1 1 12 1.25
    .MODEL MOD1 PMOS (VTO=-0.82 RS=0.6 RD=0.2 IS=1E-15 KP=0.73 CBD=60E-12 KF=2e-19 AF=1.22)
    .MODEL Dmod1 D (IS=1E-13 RS=0.5 N=1)
    .MODEL Dmod2 D (IS=1E-13 RS=0.1 N=0.5)
    .MODEL Rmod1 RES (TC1=-3E-5 TC2=-1E-7)
    .MODEL Smod1 VSWITCH RON=1 ROFF=1E6  VON=0 VOFF=1 
    .ENDS ZXCL300
    *
    *$
    *


*ZETEX ZXMN3A02N8 Spice Model v2.0 Last Revised 22/2/05
    *
    *
    .SUBCKT ZXMN3A02N8 30 40 50
    *----connections----D-G-S
    M1 6 2 7 7 Nmod L=1.16E-6 W=2.3
    M2 7 2 7 6 Pmod L=1.3E-6 W=1.3
    RG 4 2 3
    RIN 2 5 1E12
    RD 3 6 Rdmod 0.001
    RS 7 5 Rdmod 0.018
    RL 3 5 3E9
    C1 2 5 8.5E-12
    C2 3 2 3E-12
    D1 5 3  Dbodymod
    LD 3 30 1.3E-9
    LG 4 40 1.2E-9
    LS 5 50 1.2E-9
    .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E17 VTO=2
    +KP=5E-5 NFS=2E11 KAPPA=0.1 UO=650 IS=1E-15 N=10)
    .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1.5E16
    +TPG=-1 IS=1E-15 N=10)
    .MODEL Dbodymod D (IS=4E-12 RS=.014 IKF=3.6 TRS1=1.5e-3
    +CJO=1070e-12  BV=33)
    .MODEL Rdmod RES (TC1=4e-3 TC2=1E-5)
    .ENDS
    *
    *$
    *


*SRC=1N4001;DI_1N4001;Diodes;Si;  50.0V  1.00A  3.00us   Diodes, Inc. diode
.MODEL DI_1N4001 D  ( IS=76.9p RS=42.0m BV=50.0 IBV=5.00u
+ CJO=39.8p  M=0.333 N=1.45 TT=4.32u )


*SRC=B160B;DI_B160B;Diodes;Si;  60.0V  1.00A  5.00ns   Diodes Inc. Schottky
.MODEL DI_B160B D  ( IS=15.7u RS=42.0m BV=60.0 IBV=500u
+ CJO=133p  M=0.333 N=1.70 TT=7.20n )


*SRC=B170;DI_B170;Diodes;Si;  70.0V  1.00A  5.00ns   Diodes Inc. Schottky 
.MODEL DI_B170 D  ( IS=89.3u RS=42.2m BV=70.0 IBV=500n 
+ CJO=66.3p  M=0.333 N=2.45 TT=7.20n )


*SRC=B170B;DI_B170B;Diodes;Si;  70.0V  1.00A  5.00ns   Diodes Inc. Schottky
.MODEL DI_B170B D  ( IS=89.3u RS=42.2m BV=70.0 IBV=500n
+ CJO=66.3p  M=0.333 N=2.45 TT=7.20n )


*SRC=B180;DI_B180;Diodes;Si;  80.0V  1.00A  5.00ns   Diodes Inc. Schottky 
.MODEL DI_B180 D  ( IS=89.3u RS=42.2m BV=80.0 IBV=500n 
+ CJO=66.3p  M=0.333 N=2.45 TT=7.20n )


*SRC=B180B;DI_B180B;Diodes;Si;  80.0V  1.00A  5.00ns   Diodes Inc. Schottky
.MODEL DI_B180B D  ( IS=89.3u RS=42.2m BV=80.0 IBV=500n
+ CJO=66.3p  M=0.333 N=2.45 TT=7.20n )


*SRC=B190;DI_B190;Diodes;Si;  90.0V  1.00A  5.00ns   Diodes Inc. Schottky 
.MODEL DI_B190 D  ( IS=89.3u RS=42.2m BV=90.0 IBV=500n 
+ CJO=66.3p  M=0.333 N=2.45 TT=7.20n )


*SRC=B190B;DI_B190B;Diodes;Si;  90.0V  1.00A  5.00ns   Diodes Inc. Schottky
.MODEL DI_B190B D  ( IS=89.3u RS=42.2m BV=90.0 IBV=500n
+ CJO=66.3p  M=0.333 N=2.45 TT=7.20n )


*SRC=B2100;DI_B2100;Diodes;Si;  100.0V  2.00A  10.0ns   Diodes Inc Schottky
.MODEL DI_B2100 D  ( IS=746u RS=21.0m BV=100.0 IBV=500u
+ CJO=179p  M=0.333 N=2.87 TT=14.4n )


*SRC=B220;DI_B220;Diodes;Si;  20.0V  2.00A  1.00ns   Diodes Inc. 
.MODEL DI_B220 D  ( IS=7.98u RS=13.4m BV=20.0 IBV=500u
+ CJO=370p  M=0.333 N=1.13 TT=1.44n )


*SRC=B220A;DI_B220A;Diodes;Si;  20.0V  2.00A  1.00ns   Diodes Inc. 
.MODEL DI_B220A D  ( IS=7.98u RS=13.4m BV=20.0 IBV=500u
+ CJO=370p  M=0.333 N=1.13 TT=1.44n )


*SRC=B230;DI_B230;Diodes;Si;  30.0V  2.00A  1.00ns   Diodes Inc. 
.MODEL DI_B230 D  ( IS=7.98u RS=13.4m BV=30.0 IBV=500u
+ CJO=370p  M=0.333 N=1.13 TT=1.44n )


*SRC=B230A;DI_B230A;Diodes;Si;  30.0V  2.00A  1.00ns   Diodes Inc. 
.MODEL DI_B230A D  ( IS=7.98u RS=13.4m BV=30.0 IBV=500u
+ CJO=370p  M=0.333 N=1.13 TT=1.44n )


*SRC=B240;DI_B240;Diodes;Si;  40.0V  2.00A  1.00ns   Diodes Inc. 
.MODEL DI_B240 D  ( IS=7.98u RS=13.4m BV=40.0 IBV=500u
+ CJO=370p  M=0.333 N=1.13 TT=1.44n )


*SRC=B240A;DI_B240A;Diodes;Si;  40.0V  2.00A  1.00ns   Diodes Inc. 
.MODEL DI_B240A D  ( IS=7.98u RS=13.4m BV=40.0 IBV=500u
+ CJO=370p  M=0.333 N=1.13 TT=1.44n )


*SRC=B250;DI_B250;Diodes;Si;  50.0V  2.00A  1.00ns   Diodes Inc. 
.MODEL DI_B250 D  ( IS=6.08u RS=14.9m BV=50.0 IBV=500u
+ CJO=370p  M=0.333 N=1.55 TT=1.44n )


*SRC=B250A;DI_B250A;Diodes;Si;  50.0V  2.00A  1.00ns   Diodes Inc. 
.MODEL DI_B250A D  ( IS=6.08u RS=14.9m BV=50.0 IBV=500u
+ CJO=370p  M=0.333 N=1.55 TT=1.44n )


*SRC=B260;DI_B260;Diodes;Si;  60.0V  2.00A  1.00ns   Diodes Inc. 
.MODEL DI_B260 D  ( IS=6.08u RS=14.9m BV=60.0 IBV=500u
+ CJO=370p  M=0.333 N=1.55 TT=1.44n )


*SRC=B260A;DI_B260A;Diodes;Si;  60.0V  2.00A  1.00ns   Diodes Inc. 
.MODEL DI_B260A D  ( IS=6.08u RS=14.9m BV=60.0 IBV=500u
+ CJO=370p  M=0.333 N=1.55 TT=1.44n )


*SRC=B270;DI_B270;Diodes;Si;  70.0V  2.00A  10.0ns   Diodes Inc Schottky
.MODEL DI_B270 D  ( IS=746u RS=21.0m BV=70.0 IBV=500u
+ CJO=179p  M=0.333 N=2.87 TT=14.4n )


*SRC=B280;DI_B280;Diodes;Si;  80.0V  2.00A  10.0ns   Diodes Inc Schottky
.MODEL DI_B280 D  ( IS=746u RS=21.0m BV=80.0 IBV=500u
+ CJO=179p  M=0.333 N=2.87 TT=14.4n )


*SRC=B290;DI_B290;Diodes;Si;  90.0V  2.00A  10.0ns   Diodes Inc Schottky
.MODEL DI_B290 D  ( IS=746u RS=21.0m BV=90.0 IBV=500u
+ CJO=179p  M=0.333 N=2.87 TT=14.4n )


*SRC=B3100;DI_B3100;Diodes;Si;  100V  3.00A  10.0ns   Diodes Inc. Schottky
.MODEL DI_B3100 D  ( IS=916u RS=14.1m BV=100 IBV=500u
+ CJO=159p  M=0.333 N=3.04 TT=14.4n )


*SRC=B320;DI_B320;Diodes;Si;  30.0V  3.00A  5.00ns   Diodes Inc. Schottky
.MODEL DI_B320 D  ( IS=9.90n RS=14.0m BV=30.0 IBV=500u
+ CJO=464p  M=0.333 N=0.775 TT=7.20n )


*SRC=B320A;DI_B320A;Diodes;Si;  30.0V  3.00A  5.00ns   Diodes Inc. Schottky
.MODEL DI_B320A D  ( IS=9.90n RS=14.0m BV=30.0 IBV=500u
+ CJO=464p  M=0.333 N=0.775 TT=7.20n )


*SRC=B320B;DI_B320B;Diodes;Si;  30.0V  3.00A  5.00ns   Diodes Inc. Schottky
.MODEL DI_B320B D  ( IS=9.90n RS=14.0m BV=30.0 IBV=500u
+ CJO=464p  M=0.333 N=0.775 TT=7.20n )


*SRC=B330;DI_B330;Diodes;Si;  30.0V  3.00A  5.00ns   Diodes Inc. Schottky
.MODEL DI_B330 D  ( IS=9.90n RS=14.0m BV=30.0 IBV=500u
+ CJO=464p  M=0.333 N=0.775 TT=7.20n )


*SRC=B330A;DI_B330A;Diodes;Si;  30.0V  3.00A  5.00ns   Diodes Inc. Schottky
.MODEL DI_B330A D  ( IS=9.90n RS=14.0m BV=30.0 IBV=500u
+ CJO=464p  M=0.333 N=0.775 TT=7.20n )


*SRC=B330B;DI_B330B;Diodes;Si;  30.0V  3.00A  5.00ns   Diodes Inc. Schottky
.MODEL DI_B330B D  ( IS=9.90n RS=14.0m BV=30.0 IBV=500u
+ CJO=464p  M=0.333 N=0.775 TT=7.20n )


*SRC=B340;DI_B340;Diodes;Si;  40.0V  3.00A  5.00ns   Diodes Inc. Schottky
.MODEL DI_B340 D  ( IS=9.90n RS=14.0m BV=40.0 IBV=500u
+ CJO=464p  M=0.333 N=0.775 TT=7.20n )


*SRC=B340A;DI_B340A;Diodes;Si;  40.0V  3.00A  5.00ns   Diodes Inc. Schottky
.MODEL DI_B340A D  ( IS=9.90n RS=14.0m BV=40.0 IBV=500u
+ CJO=464p  M=0.333 N=0.775 TT=7.20n )


*SRC=B340B;DI_B340B;Diodes;Si;  40.0V  3.00A  5.00ns   Diodes Inc. Schottky
.MODEL DI_B340B D  ( IS=9.90n RS=14.0m BV=40.0 IBV=500u
+ CJO=464p  M=0.333 N=0.775 TT=7.20n )


*SRC=B340LA;DI_B340LA;Diodes;Si;  40.0V  3.00A  10.0ns   Diodes Inc.
Schottky
.MODEL DI_B340LA D  ( IS=1.15m RS=17.8m BV=40.0 IBV=2.00m
+ CJO=411p  M=0.333 N=1.70 TT=14.4n )


*SRC=B340LB;DI_B340LB;Diodes;Si;  40.0V  3.00A  10.0ns   Diodes Inc.
Schottky
.MODEL DI_B340LB D  ( IS=1.15m RS=17.8m BV=40.0 IBV=2.00m
+ CJO=411p  M=0.333 N=1.70 TT=14.4n )


*SRC=B350;DI_B350;Diodes;Si;  50.0V  3.00A  5.00ns   Diodes Inc. Schottky
.MODEL DI_B350 D  ( IS=9.90n RS=14.0m BV=50.0 IBV=500u
+ CJO=464p  M=0.333 N=0.775 TT=7.20n )


*SRC=B350A;DI_B350A;Diodes;Si;  50.0V  3.00A  5.00ns   Diodes Inc. Schottky
.MODEL DI_B350A D  ( IS=9.90n RS=14.0m BV=50.0 IBV=500u
+ CJO=464p  M=0.333 N=0.775 TT=7.20n )


*SRC=B350B;DI_B350B;Diodes;Si;  50.0V  3.00A  5.00ns   Diodes Inc. Schottky
.MODEL DI_B350B D  ( IS=9.90n RS=14.0m BV=50.0 IBV=500u
+ CJO=464p  M=0.333 N=0.775 TT=7.20n )


*SRC=B360;DI_B360;Diodes;Si;  60.0V  3.00A  5.00ns   Diodes Inc. Schottky
.MODEL DI_B360 D  ( IS=9.90n RS=14.0m BV=60.0 IBV=500u
+ CJO=464p  M=0.333 N=0.775 TT=7.20n )


*SRC=B360A;DI_B360A;Diodes;Si;  60.0V  3.00A  5.00ns   Diodes Inc. Schottky
.MODEL DI_B360A D  ( IS=9.90n RS=14.0m BV=60.0 IBV=500u
+ CJO=464p  M=0.333 N=0.775 TT=7.20n )


*SRC=B360B;DI_B360B;Diodes;Si;  60.0V  3.00A  5.00ns   Diodes Inc. Schottky
.MODEL DI_B360B D  ( IS=9.90n RS=14.0m BV=60.0 IBV=500u
+ CJO=464p  M=0.333 N=0.775 TT=7.20n )


*SRC=B370;DI_B370;Diodes;Si;  70.0V  3.00A  10.0ns   Diodes Inc. Schottky
.MODEL DI_B370 D  ( IS=916u RS=14.1m BV=70.0 IBV=500u
+ CJO=159p  M=0.333 N=3.04 TT=14.4n )


*SRC=B380;DI_B380;Diodes;Si;  80.0V  3.00A  10.0ns   Diodes Inc. Schottky
.MODEL DI_B380 D  ( IS=916u RS=14.1m BV=80.0 IBV=500u
+ CJO=159p  M=0.333 N=3.04 TT=14.4n )


*SRC=B390;DI_B390;Diodes;Si;  90.0V  3.00A  10.0ns   Diodes Inc. Schottky
.MODEL DI_B390 D  ( IS=916u RS=14.1m BV=90.0 IBV=500u
+ CJO=159p  M=0.333 N=3.04 TT=14.4n )


*SRC=B3L30LP;DI_B3L30LP;Diodes;Si;  30.0V  3.00A  15.0ns   Diodes INC Schottky rectifier
.MODEL DI_B3L30LP D  ( IS=25.1u RS=12.5m BV=30.0 IBV=450u
+ CJO=517p  M=0.333 N=1.03 TT=21.6n )


*SRC=B520C;DI_B520C;Diodes;Si;  20.0V  5.00A  5.00ns   Diodes Inc. Schottky 
.MODEL DI_B520C D  ( IS=617u RS=10.0m BV=20.0 IBV=500u 
+ CJO=497p  M=0.333 N=1.70 TT=7.20n )


*SRC=B530C;DI_B530C;Diodes;Si;  30.0V  5.00A  5.00ns   Diodes Inc. Schottky 
.MODEL DI_B530C D  ( IS=617u RS=10.0m BV=30.0 IBV=500u 
+ CJO=497p  M=0.333 N=1.70 TT=7.20n )


.LIB B540C
*
.MODEL B540C D (
+LEVEL    = 1              IS       = 1.5672e-06     RS       = 0.0209949      
+N        = 1.01362        IBV      = 0.0001         CJO      = 8.98694e-10    
+VJ       = 0.396195       MJ       = 0.457747       FC       = 0.5            
+XTI      = 0.000352915    EG       = 0.750278       TRS1     = 0.00406277     
+TRS2     = 2.17553e-07    BV       = 50             TT       = 0 )
*
.ENDL B540C


*SRC=B550C;DI_B550C;Diodes;Si;  50.0V  5.00A  5.00ns   Diodes Inc. Schottky 
.MODEL DI_B550C D  ( IS=66.7u RS=14.1m BV=50.0 IBV=500u 
+ CJO=497p  M=0.333 N=1.70 TT=7.20n )


*SRC=B560C;DI_B560C;Diodes;Si;  60.0V  5.00A  5.00ns   Diodes Inc. Schottky 
.MODEL DI_B560C D  ( IS=66.7u RS=14.1m BV=60.0 IBV=500u 
+ CJO=497p  M=0.333 N=1.70 TT=7.20n )


*BAS70LP;Schottky rectifier 

*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=11NOV2011
*VERSION=1

.MODEL BAS70LP D  ( IS=1.5n RS=14 ISR=3n BV=75 NBV=300 IBV=15n IKF=.4m
+ CJO=2.04p  M=0.19 VJ=.4 N=.99 TT=1.6n EG=.8 XTI=.3 TBV1=.0001 TRS1=.0048)

.SIMULATOR DEFAULT


*SRC=BAT1000;DI_BAT1000;Diodes;Si;  40.0V  1.00A  5.00ns   Diodes Inc. Schottky Barrier Rectifier 
.MODEL DI_BAT1000 D  ( IS=874n RS=65.3m BV=40.0 IBV=100u 
+ CJO=175p  M=0.333 N=0.823 TT=7.20n )


*SRC=BAT400D;DI_BAT400D;Diodes;Si;  40.0V  0.500A  5.00ns   Diodes Inc. Schottky 
.MODEL DI_BAT400D D  ( IS=1.80u RS=0.103 BV=40.0 IBV=50.0u 
+ CJO=119p  M=0.333 N=1.26 TT=7.20n )


*SRC=BAT750;DI_BAT750;Diodes;Si;  40.0V  0.750A  5.00ns   Diodes Inc. Schottky 
.MODEL DI_BAT750 D  ( IS=23.1u RS=82.3m BV=40.0 IBV=100u 
+ CJO=225p  M=0.333 N=1.16 TT=7.20n )


.MODEL BAT750 D IS=7E-6 N=0.99 RS=130E-3 IKF=0.15 XTI=2 EG=0.58
+ CJO=184.9p M=0.523 VJ=0.3905 Fc=0.5 BV=60 IBV=300E-6
+ ISR=4E-6 NR=1.8  
*


*SRC=BAT760;DI_BAT760;Diodes;Si;  30.0V  1.00A  10.0ns   Diodes Inc. Schottky
.MODEL DI_BAT760 D  ( IS=10.6u RS=49.9m BV=30.0 IBV=50.0u
+ CJO=49.3p  M=0.333 N=1.35 TT=14.4n )


*SRC=DFLS1100;DI_DFLS1100;Diodes;Si;  100V  1.00A  11.0ns   Diodes Inc. Schottky Rectifier
.MODEL DI_DFLS1100 D  ( IS=270n RS=28.3m BV=100 IBV=1.00u
+ CJO=70.9p  M=0.333 N=1.50 TT=15.8n )


*SRC=DFLS1150;DI_DFLS1150;Diodes;Si;  150V  1.00A  14.0ns   Diodes Inc. Schottky Rectifier
.MODEL DI_DFLS1150 D  ( IS=10.2u RS=27.0m BV=150 IBV=2.00u
+ CJO=55.2p  M=0.333 N=2.32 TT=20.2n )


*SRC=DFLS1200;DI_DFLS1200;Diodes;Si;  200V  1.00A  30.0ns   Diodes Inc. Schottky
.MODEL DI_DFLS1200 D  ( IS=64.7u RS=10.3m BV=200 IBV=2.00u
+ CJO=45.3p  M=0.333 N=3.25 TT=43.2n )


*SRC=DFLS120L;DI_DFLS120L;Diodes;Si;  20.0V  1.00A  5.00ns   DIODES INC SCHOTTKY RECTIFIER
.MODEL DI_DFLS120L D  ( IS=21.0u RS=46.3m BV=20.0 IBV=1.00m
+ CJO=252p  M=0.333 N=0.936 TT=7.20n )


*SRC=DFLS130;DI_DFLS130;Diodes;Si;  30.0V  1.00A  5.00ns   DIODES INC SCHOTTKY RECTIFIER
.MODEL DI_DFLS130 D  ( IS=35.5u RS=54.5m BV=30.0 IBV=1.00m
+ CJO=97.1p  M=0.333 N=1.09 TT=7.20n )


*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*DATE=10AUG2011
*VERSION=2
*
.MODEL DFLS130L D(IS=10U RS=58m N=0.88 BV=30 IBV=0.36m NBV=150
+ EG=0.62 ISR=30u CJO=396.4p VJ=0.31 M=0.48 TBV1=-0.007 TRS1=0.0045)
*$


*SRC=DFLS140;DI_DFLS140;Diodes;Si;  40.0V  1.10A  5.00ns   Diodes Inc Schottky
.MODEL DI_DFLS140 D  ( IS=163n RS=0.103 BV=40.0 IBV=20.0u
+ CJO=99.4p  M=0.333 N=1.00 TT=7.20n )


*SRC=DFLS140L;DI_DFLS140L;Diodes;Si;  40.0V  1.00A  5.00ns   Diodes Inc. Low VF Schottky
.MODEL DI_DFLS140L D  ( IS=817n RS=32.2m BV=40.0 IBV=500u
+ CJO=293p  M=0.333 N=1.01 TT=7.20n )


*SRC=DFLS160;DI_DFLS160;Diodes;Si;  60.0V  1.00A  10.0ns   Diodes Inc. Schottky Rectifier
.MODEL DI_DFLS160 D  ( IS=736n RS=63.0m BV=60.0 IBV=100u
+ CJO=163p  M=0.333 N=1.01 TT=14.4n )


*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*DATE=16/12/2014
*VERSION=1.1
*
.SUBCKT DFLS2100 1 2 
D1 1 2 Dsch
D2 1 2 Dpn 
.MODEL Dsch D (IS=4n RS=.2 BV=110 IBV=50u CJO=88p M=.4 VJ=.55 N=1.05 IKF=60m TRS1=.006 TT=15n EG=.8)
.model Dpn D(IS=1p IKF=100 BV=110 TT=50n EG=1.05 RS=.028 ISR=1n)
.ENDS


*                (c)  2014 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*SRC=DFLS220L;DI_DFLS220L;Diodes;Si;  20.0V  2.00A  5.00ns   Diodes Inc. Schottky
.MODEL DI_DFLS220L D  ( IS=20.3u RS=47.4m BV=20.0 IBV=1.00m
+ CJO=252p  M=0.333 N=0.947 TT=7.20n )


*SRC=DFLS230;DI_DFLS230;Diodes;Si;  30.0V  2.00A  5.00ns   Diodes Inc. Schottky
.MODEL DI_DFLS230 D  ( IS=100u RS=52.2m BV=30.0 IBV=1.00m
+ CJO=133p  M=0.333 N=1.27 TT=7.20n )


*SRC=DFLS230L;DI_DFLS230L;Diodes;Si;  30.0V  2.00A  5.00ns   Diodes Inc. Schottky
.MODEL DI_DFLS230L D  ( IS=125u RS=43.6m BV=30.0 IBV=1.00m
+ CJO=265p  M=0.333 N=1.21 TT=7.20n )


*SRC=DFLS230LH;DI_DFLS230LH;Diodes;Si;  30.0V  1.00A  11.0ns   Diodes Inc. Schottky
.MODEL DI_DFLS230LH D  ( IS=947n RS=32.4m BV=30.0 IBV=200u
+ CJO=206p  M=0.333 N=0.957 TT=15.8n )


*SRC=DFLS240L;DI_DFLS240L;Diodes;Si;  40.0V  2.00A  5.00ns   Diodes Inc. Schottky
.MODEL DI_DFLS240L D  ( IS=516n RS=31.4m BV=40.0 IBV=500u
+ CJO=292p  M=0.333 N=0.911 TT=7.20n )


*SRC=MBR1030CT;DI_MBR1030CT;Diodes;Si;  30.0V  10.0A  10.0ns   Diodes Inc. Schottky - Single device of dual
.MODEL DI_MBR1030CT D  ( IS=4.25u RS=13.0m BV=30.0 IBV=100u
+ CJO=318p  M=0.333 N=1.15 TT=14.4n )


*SRC=MBR1035;DI_MBR1035;Diodes;Si;  35.0V  10.0A  5.00ns   Diodes Inc. Schottky Barrier Rectifier
.MODEL DI_MBR1035 D  ( IS=2.62m RS=4.20m BV=35.0 IBV=100u
+ CJO=796p  M=0.333 N=2.12 TT=7.20n )


*SRC=MBR1040;DI_MBR1040;Diodes;Si;  40.0V  10.0A  5.00ns   Diodes Inc. Schottky Barrier Rectifier
.MODEL DI_MBR1040 D  ( IS=2.62m RS=4.20m BV=40.0 IBV=100u
+ CJO=796p  M=0.333 N=2.12 TT=7.20n )


*SRC=MBR1040CT;DI_MBR1040CT;Diodes;Si;  40.0V  10.0A  10.0ns   Diodes Inc. Schottky - Single device of dual
.MODEL DI_MBR1040CT D  ( IS=4.25u RS=13.0m BV=40.0 IBV=100u
+ CJO=318p  M=0.333 N=1.15 TT=14.4n )


*SRC=MBR1045;DI_MBR1045;Diodes;Si;  45.0V  10.0A  5.00ns   Diodes Inc. Schottky Barrier Rectifier
.MODEL DI_MBR1045 D  ( IS=2.62m RS=4.20m BV=45.0 IBV=100u
+ CJO=796p  M=0.333 N=2.12 TT=7.20n )


*SRC=MBR1045CT;DI_MBR1045CT;Diodes;Si;  45.0V  10.0A  10.0ns   Diodes Inc. Schottky - Single device of dual
.MODEL DI_MBR1045CT D  ( IS=4.25u RS=13.0m BV=45.0 IBV=100u
+ CJO=318p  M=0.333 N=1.15 TT=14.4n )


*SRC=MBR1050;DI_MBR1050;Diodes;Si;  50.0V  10.0A  5.00ns   Diodes Inc. Schottky Barrier Rectifier
.MODEL DI_MBR1050 D  ( IS=153u RS=3.17m BV=50.0 IBV=100u
+ CJO=796p  M=0.333 N=1.96 TT=7.20n )


*SRC=MBR1050CT;DI_MBR1050CT;Diodes;Si;  50.0V  10.0A  10.0ns   Diodes Inc. Schottky - Single device of dual
.MODEL DI_MBR1050CT D  ( IS=7.24u RS=14.5m BV=50.0 IBV=100u
+ CJO=318p  M=0.333 N=1.29 TT=14.4n )


*SRC=MBR1060;DI_MBR1060;Diodes;Si;  60.0V  10.0A  5.00ns   Diodes Inc. Schottky Barrier Rectifier
.MODEL DI_MBR1060 D  ( IS=153u RS=3.17m BV=60.0 IBV=100u
+ CJO=796p  M=0.333 N=1.96 TT=7.20n )


*SRC=MBR1530CT;DI_MBR1530CT;Diodes;Si;  30.0V  15.0A  5.00ns   Diodes Inc. Schottky - One element of device
.MODEL DI_MBR1530CT D  ( IS=344u RS=2.81m BV=30.0 IBV=25.0u
+ CJO=530p  M=0.333 N=2.28 TT=7.20n )


*SRC=MBR1535CT;DI_MBR1535CT;Diodes;Si;  35.0V  15.0A  5.00ns   Diodes Inc. Schottky - One element of device
.MODEL DI_MBR1535CT D  ( IS=344u RS=2.81m BV=35.0 IBV=25.0u
+ CJO=530p  M=0.333 N=2.28 TT=7.20n )


*SRC=MBR1540CT;DI_MBR1540CT;Diodes;Si;  40.0V  15.0A  5.00ns   Diodes Inc. Schottky - One element of device
.MODEL DI_MBR1540CT D  ( IS=344u RS=2.81m BV=40.0 IBV=25.0u
+ CJO=530p  M=0.333 N=2.28 TT=7.20n )


*SRC=MBR1545CT;DI_MBR1545CT;Diodes;Si;  45.0V  15.0A  5.00ns   Diodes Inc. Schottky - One element of device
.MODEL DI_MBR1545CT D  ( IS=344u RS=2.81m BV=45.0 IBV=25.0u
+ CJO=530p  M=0.333 N=2.28 TT=7.20n )


*SRC=MBR1550CT;DI_MBR1550CT;Diodes;Si;  50.0V  15.0A  5.00ns   Diodes Inc. Schottky - One element of device
.MODEL DI_MBR1550CT D  ( IS=11.3u RS=2.64m BV=50.0 IBV=25.0u
+ CJO=530p  M=0.333 N=1.87 TT=7.20n )


*SRC=MBR1560CT;DI_MBR1560CT;Diodes;Si;  60.0V  15.0A  5.00ns   Diodes Inc. Schottky - One element of device
.MODEL DI_MBR1560CT D  ( IS=11.3u RS=2.64m BV=60.0 IBV=25.0u
+ CJO=530p  M=0.333 N=1.87 TT=7.20n )


*SRC=MBR2030CT;DI_MBR2030CT;Diodes;Si;  30.0V  20.0A  1.00ns   Diodes Inc. Schottky - One element of device
.MODEL DI_MBR2030CT D  ( IS=99.0u RS=2.10m BV=30.0 IBV=60.0u
+ CJO=994p  M=0.333 N=1.70 TT=1.44n )


*SRC=MBR2035CT;DI_MBR2035CT;Diodes;Si;  35.0V  20.0A  1.00ns   Diodes Inc. Schottky - One element of device
.MODEL DI_MBR2035CT D  ( IS=98.9u RS=2.11m BV=35.0 IBV=60.0u
+ CJO=994p  M=0.333 N=1.70 TT=1.44n )


*SRC=MBR2040CT;DI_MBR2040CT;Diodes;Si;  40.0V  20.0A  1.00ns   Diodes Inc. Schottky - One element of device
.MODEL DI_MBR2040CT D  ( IS=98.9u RS=2.11m BV=40.0 IBV=60.0u
+ CJO=994p  M=0.333 N=1.70 TT=1.44n )


*SRC=MBR2045CT;DI_MBR2045CT;Diodes;Si;  45.0V  20.0A  1.00ns   Diodes Inc. Schottky - One element of device
.MODEL DI_MBR2045CT D  ( IS=98.9u RS=2.11m BV=45.0 IBV=60.0u
+ CJO=994p  M=0.333 N=1.70 TT=1.44n )


*SRC=MBR2050CT;DI_MBR2050CT;Diodes;Si;  50.0V  20.0A  1.00ns   Diodes Inc. Schottky - One element of device
.MODEL DI_MBR2050CT D  ( IS=16.0u RS=2.11m BV=50.0 IBV=60.0u
+ CJO=994p  M=0.333 N=1.70 TT=1.44n )


*SRC=MBR2060CT;DI_MBR2060CT;Diodes;Si;  60.0V  20.0A  1.00ns   Diodes Inc. Schottky - One element of device
.MODEL DI_MBR2060CT D  ( IS=16.0u RS=2.11m BV=60.0 IBV=60.0u
+ CJO=994p  M=0.333 N=1.70 TT=1.44n )


*SRC=MBR2545CT;DI_MBR2545CT;Diodes;Si;  45.0V  30.0A  1.00ns   Diodes Inc. Schottky - One element of device
.MODEL DI_MBR2545CT D  ( IS=533u RS=1.41m BV=45.0 IBV=50.0u
+ CJO=1.34n  M=0.333 N=1.95 TT=1.44n )


*SRC=MBR2560CT;DI_MBR2560CT;Diodes;Si;  60.0V  30.0A  1.00ns   Diodes Inc. Schottky - One element of device
.MODEL DI_MBR2560CT D  ( IS=1.16m RS=1.41m BV=60.0 IBV=50.0u
+ CJO=1.34k  M=0.333 N=2.53 TT=1.44n )


*SRC=MBRB1530CT;DI_MBRB1530CT;Diodes;Si;  30.0V  15.0A  30.0ns   Diodes
Inc. Schottky -- one element of device
.MODEL DI_MBRB1530CT D  ( IS=71.5u RS=2.81m BV=30.0 IBV=100u
+ CJO=464p  M=0.333 N=1.61 TT=43.2n )


*SRC=MBRB1540CT;DI_MBRB1540CT;Diodes;Si;  40.0V  15.0A  30.0ns   Diodes
Inc. Schottky -- one element of device
.MODEL DI_MBRB1540CT D  ( IS=71.5u RS=2.81m BV=40.0 IBV=100u
+ CJO=464p  M=0.333 N=1.61 TT=43.2n )


*SRC=PD3S120L;DI_PD3S120L;Diodes;Si;  20.0V  1.00A  18.0ns   Diodes INC Schottky rectifier
.MODEL DI_PD3S120L D  ( IS=4.60u RS=41.2m BV=20.0 IBV=70.0u
+ CJO=112p  M=0.333 N=1.03 TT=25.9n )


*SRC=PS3S130H;DI_PD3S130H;Diodes;Si;  30.0V  1.00A  17.5ns   Diodes INC Schottky rectifier
.MODEL DI_PD3S130H D  ( IS=425n RS=67.9m BV=30.0 IBV=100u
+ CJO=97.1p  M=0.333 N=1.07 TT=25.2n )


*SRC=PS3S130L;DI_PD3S130L;Diodes;Si;  30.0V  1.00A  21.5ns   Diodes INC Schottky rectifier
.MODEL DI_PD3S130L D  ( IS=6.92u RS=35.0m BV=30.0 IBV=1.50m
+ CJO=97.1p  M=0.333 N=0.953 TT=31.0n )


*SRC=PS3S140;DI_PD3S140;Diodes;Si;  40.0V  1.00A  27.0ns   Diodes INC Schottky rectifier
.MODEL DI_PD3S140 D  ( IS=91.2n RS=62.2m BV=40.0 IBV=50.0u
+ CJO=77.7p  M=0.333 N=0.996 TT=38.9n )


*SRC=PS3S160;DI_PD3S160;Diodes;Si;  60.0V  1.00A  13.0ns   Diodes INC Schottky rectifier
.MODEL DI_PD3S160 D  ( IS=82.7n RS=57.6m BV=60.0 IBV=100u
+ CJO=92.2p  M=0.333 N=1.09 TT=18.7n )


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=13/10/2009
*VERSION=1
*
.MODEL PD3S230L D IS=1.07E-5 N=1 ISR=7E-6 NR=1 BV=33
+ IBV=1E-4 NBV=5 IBVL=6E-6 NBVL=200 RS=0.035 CJO=220E-12
+ VJ=0.33 M=0.40 EG=0.6 XTI=2 TRS1=6E-3
*
*$


*SRC=PDS1040;DI_PDS1040;Diodes;Si;  40.0V  10.0A  10.0ns   Diodes Inc. Schottky
.MODEL DI_PDS1040 D  ( IS=2.78u RS=2.78m BV=40.0 IBV=700u
+ CJO=1.72n  M=0.333 N=1.05 TT=14.4n )


*SRC=PDS1040L;Di_PDS1040L;Diodes;Si;  40.0V  10.0A  35.0ns   Diodes Inc. 10A Low VF Schottky Barrier Rectifier
.MODEL Di_PDS1040L D  ( IS=6.02u RS=4.20m BV=40.0 IBV=600u
+ CJO=2.21n  M=0.333 N=1.04 TT=50.4n )


*SRC=PDS1045;Di_PDS1045;Diodes;Si;  45.0V  10.0A  31.1ns   Diodes Inc. 10A Schottky Barrier Rectifier
.MODEL Di_PDS1045 D  ( IS=17.0u RS=4.20m BV=45.0 IBV=600u
+ CJO=2.25n  M=0.333 N=1.11 TT=44.8n )


*SRC=PDS3100;DI_PDS3100;Diodes;Si;  100V  3.00A  10.0ns   Diodes Inc. 3A HV Schottky Barrier Rectifier
.MODEL DI_PDS3100 D  ( IS=20.9u RS=13.9m BV=100 IBV=200u
+ CJO=305p  M=0.333 N=1.70 TT=14.4n )


*DIODES_INC_SPICE_MODEL_PDS3200
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=30/06/2014
*VERSION=1


.MODEL PDS3200 D (IS=10E-9 RS=0.026 ISR=.1u  BV=202.0 IBV=1u 
+ CJO=500p  M=0.4 VJ=.55 N=1  IKF=.09 EG=.95 XTI=1.5 TT=30n)




*                (c)  2014 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*



*SRC=PDS340;DI_PDS340;Diodes;Si;  40.0V  3.00A  13.0ns   Diodes Inc. Schottky
.MODEL DI_PDS340 D  ( IS=2.59u RS=13.5m BV=40.0 IBV=500u
+ CJO=630p  M=0.333 N=1.11 TT=18.7n )


*
*Zetex PDS360 Spice Model v1.0 Last Revised 20/02/09
*
.MODEL PDS360 D IS=0.7E-7 N=1.02 ISR=0.94E-7 NR=1.1 BV=63 IBV=2E-4
+ NBV=2 IBVL=8E-8 NBVL=300 RS=0.034 CJO=390E-12 VJ=1.1 M=0.53
+ EG=0.74 XTI=2 TRS1=4e-3
*
*$
*
*                (c)  2009 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA


*SRC=PDS4150;DI_PDS4150;Diodes;Si;  150V  4.00A  15.0ns   Diodes Inc. 4A HV Schottky Barrier Rectifier
.MODEL DI_PDS4150 D  ( IS=19.2u RS=5.66m BV=150 IBV=10.0u
+ CJO=630p  M=0.333 N=1.89 TT=21.6n )


*SRC=PDS5100;DI_PDS5100;Diodes;Si;  100V  5.00A  15.0ns   Diodes Inc. 5A Schottky Barrier Rectifier
.MODEL DI_PDS5100 D  ( IS=49.0u RS=7.63m BV=100 IBV=200u
+ CJO=375p  M=0.333 N=1.84 TT=21.6n )


*PDS5100H Spice Model v2.0 Last Revised 05/12/2014  Diodes Inc SCHOTTKY BARRIER RECTIFIER
*SIMULATOR=SPICE3

.MODEL PDS5100H D  ( IS=9.000n RS=18.00m BV=105.0 IBV=36.54u
+ CJO=836.0p M=450.0m N=970.0m TT=18.50n EG=800.0m VJ=450.0m XTI=1.500 )

*                (c)  2014 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan



*DIODES_INC_SPICE_MODEL_PDS560
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=4/08/2014
*VERSION=1

.MODEL PDS560 D (IS=18E-8 RS=0.018 ISR=20E-8  BV=60.0 IBV=1u 
+ CJO=500p  M=0.4 VJ=.4 N=.97  IKF=.35 EG=.69 XTI=1.5 NR=1.2 TT=20n)




*                (c)  2014 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*SRC=SB1100;DI_SB1100;Diodes;Si;  100.0V  1.00A  5.00ns   Diodes Inc. Schottky 
.MODEL DI_SB1100 D  ( IS=6.63u RS=62.3m BV=100.0 IBV=500u 
+ CJO=199p  M=0.333 N=1.70 TT=7.20n )


*SRC=SB140;DI_SB140;Diodes;Si;  40.0V  1.00A  5.00ns   Diodes Inc. Schottky
.MODEL DI_SB140 D  ( IS=31.5u RS=49.2m BV=40.0 IBV=500u
+ CJO=239p  M=0.333 N=1.70 TT=7.20n )


*SRC=SB150;DI_SB150;Diodes;Si;  50.0V  1.00A  5.00ns   Diodes Inc. Schottky
.MODEL DI_SB150 D  ( IS=1.17u RS=42.0m BV=50.0 IBV=500u
+ CJO=172p  M=0.333 N=1.28 TT=7.20n )


*SRC=SB160;DI_SB160;Diodes;Si;  60.0V  1.00A  5.00ns   Diodes Inc. Schottky
.MODEL DI_SB160 D  ( IS=1.17u RS=42.0m BV=60.0 IBV=500u
+ CJO=172p  M=0.333 N=1.28 TT=7.20n )


*SRC=SB170;DI_SB170;Diodes;Si;  70.0V  1.00A  5.00ns   Diodes Inc. Schottky 
.MODEL DI_SB170 D  ( IS=6.63u RS=62.3m BV=70.0 IBV=500u 
+ CJO=199p  M=0.333 N=1.70 TT=7.20n )


*SRC=SB180;DI_SB180;Diodes;Si;  80.0V  1.00A  5.00ns   Diodes Inc. Schottky 
.MODEL DI_SB180 D  ( IS=6.63u RS=62.3m BV=80.0 IBV=500u 
+ CJO=199p  M=0.333 N=1.70 TT=7.20n )


*SRC=SB190;DI_SB190;Diodes;Si;  90.0V  1.00A  5.00ns   Diodes Inc. Schottky 
.MODEL DI_SB190 D  ( IS=6.63u RS=62.3m BV=90.0 IBV=500u 
+ CJO=199p  M=0.333 N=1.70 TT=7.20n )


*SRC=SB340;DI_SB340;Diodes;Si;  40.0V  3.00A  5.00ns   Diodes Inc. Schottky
.MODEL DI_SB340 D  ( IS=85.9n RS=18.5m BV=40.0 IBV=70.0u
+ CJO=411p  M=0.333 N=0.754 TT=7.20n )


*SRC=SBG3030CT;DI_SBG3030CT;Diodes;Si;  30.0V  30.0A  5.00ns   Diodes Inc. Schottky - Single device of dual
.MODEL DI_SBG3030CT D  ( IS=31.1u RS=3.70m BV=30.0 IBV=1.00m
+ CJO=796p  M=0.333 N=1.17 TT=7.20n )
===============================================================================================


*SRC=SBG3040CT;DI_SBG3040CT;Diodes;Si;  40.0V  30.0A  5.00ns   Diodes Inc. Schottky - Single device of dual
.MODEL DI_SBG3040CT D  ( IS=31.1u RS=3.70m BV=40.0 IBV=1.00m
+ CJO=796p  M=0.333 N=1.17 TT=7.20n )
===============================================================================================


*SRC=SBG3045CT;DI_SBG3045CT;Diodes;Si;  45.0V  30.0A  5.00ns   Diodes Inc. Schottky - Single device of dual
.MODEL DI_SBG3045CT D  ( IS=31.1u RS=3.70m BV=45.0 IBV=1.00m
+ CJO=796p  M=0.333 N=1.17 TT=7.20n )
===============================================================================================


*SRC=SBL1630PT;DI_SBL1630PT;Diodes;Si;  30.0V  16.0A  5.00ns   Diodes Inc. Schottky - Single device of dual
.MODEL DI_SBL1630PT D  ( IS=575u RS=3.47m BV=30.0 IBV=500u
+ CJO=1.86n  M=0.333 N=1.68 TT=7.20n )


*SRC=SBL1635PT;DI_SBL1635PT;Diodes;Si;  35.0V  16.0A  5.00ns   Diodes Inc. Schottky - Single device of dual
.MODEL DI_SBL1635PT D  ( IS=575u RS=3.47m BV=35.0 IBV=500u
+ CJO=1.86n  M=0.333 N=1.68 TT=7.20n )


*SRC=SBL1640PT;DI_SBL1640PT;Diodes;Si;  40.0V  16.0A  5.00ns   Diodes Inc. Schottky - Single device of dual
.MODEL DI_SBL1640PT D  ( IS=575u RS=3.47m BV=40.0 IBV=500u
+ CJO=1.86n  M=0.333 N=1.68 TT=7.20n )


*SRC=SBL1645PT;DI_SBL1645PT;Diodes;Si;  45.0V  16.0A  5.00ns   Diodes Inc. Schottky - Single device of dual
.MODEL DI_SBL1645PT D  ( IS=575u RS=3.47m BV=45.0 IBV=500u
+ CJO=1.86n  M=0.333 N=1.68 TT=7.20n )


*SRC=SBL1650PT;DI_SBL1650PT;Diodes;Si;  50.0V  16.0A  5.00ns   Diodes Inc. Schottky - Single device of dual
.MODEL DI_SBL1650PT D  ( IS=89.9u RS=3.60m BV=50.0 IBV=500u
+ CJO=1.86n  M=0.333 N=1.67 TT=7.20n )


*SRC=SBL1660PT;DI_SBL1660PT;Diodes;Si;  60.0V  16.0A  5.00ns   Diodes Inc. Schottky - Single device of dual
.MODEL DI_SBL1660PT D  ( IS=89.9u RS=3.60m BV=60.0 IBV=500u
+ CJO=1.86n  M=0.333 N=1.67 TT=7.20n )


*SRC=SBL2040CT;DI_SBL2040CT;Diodes;Si;  40.0V  20.0A  10.0ns   Diodes Inc. Schottky - Single device of dual
.MODEL DI_SBL2040CT D  ( IS=4.83m RS=2.37m BV=40.0 IBV=1.00m
+ CJO=1.34n  M=0.333 N=2.28 TT=14.4n )


*SRC=SBL2045CT;DI_SBL2045CT;Diodes;Si;  45.0V  20.0A  10.0ns   Diodes Inc. Schottky - Single device of dual
.MODEL DI_SBL2045CT D  ( IS=4.83m RS=2.37m BV=45.0 IBV=1.00m
+ CJO=1.34n  M=0.333 N=2.28 TT=14.4n )


*SRC=SBL2050CT;DI_SBL2050CT;Diodes;Si;  50.0V  20.0A  10.0ns   Diodes Inc. Schottky - Single device of dual
.MODEL DI_SBL2050CT D  ( IS=3.50m RS=2.11m BV=50.0 IBV=1.00m
+ CJO=1.34n  M=0.333 N=2.95 TT=14.4n )


*SRC=SBL30L30CT;DI_SBL30L30CT;Diodes;Si;  30.0V  30.0A  50.0ns   Diodes INC Schottky Rectifier
.MODEL DI_SBL30L30CT D  ( IS=60.6u RS=2.64m BV=30.0 IBV=1.50m
+ CJO=3.05u  M=0.333 N=1.22 TT=72.0n


*SRC=SBL530;DI_SBL530;Diodes;Si;  30.0V  5.00A  10.0ns   Diodes Inc. Schottky
.MODEL DI_SBL530 D  ( IS=926u RS=9.47m BV=30.0 IBV=500u
+ CJO=968p  M=0.333 N=1.69 TT=14.4n )


*SRC=SBL535;DI_SBL535;Diodes;Si;  35.0V  5.00A  10.0ns   Diodes Inc. Schottky
.MODEL DI_SBL535 D  ( IS=926u RS=9.47m BV=35.0 IBV=500u
+ CJO=968p  M=0.333 N=1.69 TT=14.4n )


*SRC=SBL540;DI_SBL540;Diodes;Si;  40.0V  5.00A  10.0ns   Diodes Inc. Schottky
.MODEL DI_SBL540 D  ( IS=926u RS=9.47m BV=40.0 IBV=500u
+ CJO=968p  M=0.333 N=1.69 TT=14.4n )


*SRC=SBL545;DI_SBL545;Diodes;Si;  45.0V  5.00A  10.0ns   Diodes Inc. Schottky
.MODEL DI_SBL545 D  ( IS=926u RS=9.47m BV=45.0 IBV=500u
+ CJO=968p  M=0.333 N=1.69 TT=14.4n )


*SRC=SBL550;DI_SBL550;Diodes;Si;  50.0V  5.00A  10.0ns   Diodes Inc. Schottky
.MODEL DI_SBL550 D  ( IS=14.0u RS=8.33m BV=50.0 IBV=500u
+ CJO=968p  M=0.333 N=1.70 TT=14.4n )


*SRC=SBL560;DI_SBL560;Diodes;Si;  60.0V  5.00A  10.0ns   Diodes Inc. Schottky
.MODEL DI_SBL560 D  ( IS=14.0u RS=8.33m BV=60.0 IBV=500u
+ CJO=968p  M=0.333 N=1.70 TT=14.4n )


*SRC=SBL6030PT;DI_SBL6030PT;Diodes;Si;  30.0V  60.0A  10.0ns   Diodes Inc. Schottky - Single device of dual
.MODEL DI_SBL6030PT D  ( IS=1.93m RS=917u BV=30.0 IBV=20.0m
+ CJO=3.25n  M=0.333 N=1.68 TT=14.4n )


*SRC=SBL6040PT;DI_SBL6040PT;Diodes;Si;  40.0V  60.0A  10.0ns   Diodes Inc. Schottky - Single device of dual
.MODEL DI_SBL6040PT D  ( IS=1.93m RS=917u BV=40.0 IBV=20.0m
+ CJO=3.25n  M=0.333 N=1.68 TT=14.4n )


*SRC=SBL6050PT;DI_SBL6050PT;Diodes;Si;  50.0V  60.0A  10.0ns   Diodes Inc. Schottky - Single device of dual
.MODEL DI_SBL6050PT D  ( IS=353u RS=909u BV=50.0 IBV=20.0m
+ CJO=3.25n  M=0.333 N=1.76 TT=14.4n )


*SRC=SBL6060PT;DI_SBL6060PT;Diodes;Si;  60.0V  60.0A  10.0ns   Diodes Inc. Schottky - Single device of dual
.MODEL DI_SBL6060PT D  ( IS=353u RS=909u BV=60.0 IBV=20.0m
+ CJO=3.25n  M=0.333 N=1.76 TT=14.4n )


*SRC=SD830;DI_SD830;Diodes;Si;  30.0V  8.00A  5.00ns   Diodes Inc. Schottky
.MODEL DI_SD830 D  ( IS=248u RS=5.25m BV=30.0 IBV=1.00m
+ CJO=1.06n  M=0.333 N=1.70 TT=7.20n )


*SRC=SD840;DI_SD840;Diodes;Si;  40.0V  8.00A  5.00ns   Diodes Inc. Schottky
.MODEL DI_SD840 D  ( IS=248u RS=5.25m BV=40.0 IBV=1.00m
+ CJO=1.06n  M=0.333 N=1.70 TT=7.20n )


*SRC=SD845;DI_SD845;Diodes;Si;  45.0V  8.00A  5.00ns   Diodes Inc. Schottky
.MODEL DI_SD845 D  ( IS=248u RS=5.25m BV=45.0 IBV=1.00m
+ CJO=1.06n  M=0.333 N=1.70 TT=7.20n )


*SRC=SD860;DI_SD860;Diodes;Si;  60.0V  8.00A  5.00ns   Diodes Inc. Schottky
.MODEL DI_SD860 D  ( IS=248u RS=5.25m BV=60.0 IBV=1.00m
+ CJO=1.06n  M=0.333 N=1.70 TT=7.20n )


*SRC=SDM100K30L;DI_SDM100K30L;Diodes;Si;  30.0V  1.00A  10.0ns   Diodes Inc. Schottky Barrier Rectifier
.MODEL DI_SDM100K30L D  ( IS=255n RS=0.108 BV=30.0 IBV=100u
+ CJO=53.4p  M=0.333 N=0.927 TT=14.4n )


*SDM1L30BLP Spice Model v1.0 Last Revised 04/10/2014  Diodes Inc Surface Mount Schottky Bridge

.MODEL DI_SDM1L30BLP D  ( IS=26.03u RS=46.51m BV=33 IBV=10
+ CJO=516.8p  M=443.9m N=1.030 TT=10.00n EG=480.0m VJ=396.1m )

*                (c)  2014 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan


*ZETEX ZHCS1000 Spice Model v1.0 Last Revised 22/05/02
    *
    .MODEL ZHCS1000 D IS=1.6e-7 N=.59 RS=137e-3 IKF=2.5e-3 XTI=2
    +EG=.58 CJO=184.9p M=.5231 VJ=.3905 Fc=.5 BV=60 IBV=100E-6
    +ISR=4E-6 NR=1.8 
    *
    *$
    *


*ZETEX ZHCS2000 Spice Model v1.0 Last Revised 22/10/03
    *
    .MODEL ZHCS2000 D IS=5e-7 N=.59 RS=88e-3 IKF=5e-3 XTI=2
    +EG=.58 CJO=370p M=.5231 VJ=.3905 Fc=.5 BV=60 IBV=300E-6
    +ISR=10E-6 NR=1.8 
    *
    *$
    *


*ZETEX ZHCS500 Spice Model v1.0 Last Revised 22/05/02
    *
    .MODEL ZHCS500 D IS=9.1e-8 N=.59 RS=250e-3 IKF=1.37e-3 XTI=2
    +EG=.58 CJO=101p M=.5231 VJ=.3905 Fc=.5 BV=60 IBV=100E-6
    +ISR=2.2E-6 NR=1.8 
    *
    *$
    *


*ZETEX ZHCS750 Spice Model v1.0 Last Revised 23/9/97
    *
    .MODEL ZHCS750 D IS=7E-6 N=.99 RS=130E-3 IKF=.15 XTI=2 EG=.58
    +              CJO=184.9p M=.523 VJ=.3905 Fc=.5 BV=60 IBV=300E-6
    +              ISR=4E-6 NR=1.8  
    *
    *$
    *


*ZETEX ZLLS1000 Spice Model v2.0 Last revision 24/05/2007
    *
    *This simple model has limitations with respect to temperature
    *for best fit of forward characteristitics with temperature EG=0.63
    *for best fit of reverse characteristitics with temperature EG=0.85
    *
    .MODEL ZLLS1000 D IS=1.35E-6 N=1.03 ISR=3.3E-6 NR=2 IKF=0.65 BV=56 IBV=5E-4 
    +RS=0.14 TT=4E-9 CJO=115E-12 VJ=0.6 M=0.36 EG=0.63 XTI=2 TRS1=4E-3
    *
    *$
    *


*ZETEX ZLLS410 Spice Model v1.0 Last Revised 25/05/07
    *
    *This simple model has limitations with respect to temperature
    *best fit of forward characteristitics with temperature EG=0.63
    *best fit of reverse characteristitics with temperature EG=0.75
    *
    .MODEL ZLLS410 D IS=1.3e-6 N=1.03 ISR=4E-7 NR=2 IKF=0.15 BV=36 IBV=200E-6
    +NBV=1 RS=0.1 TT=2e-9 CJO=81e-12 VJ=0.6 M=0.39 EG=0.63 XTI=2 TRS1=4E-3
    *
    *$
    *


*SRC=MBRB1535CT;DI_MBRB1535CT;Diodes;Si;  35.0V  15.0A  30.0ns   Diodes
Inc. Schottky -- one element of device
.MODEL DI_MBRB1535CT D  ( IS=71.5u RS=2.81m BV=35.0 IBV=100u
+ CJO=464p  M=0.333 N=1.61 TT=43.2n )


*SRC=1N5818;DI_1N5818;Diodes;Si;  30.0V  1.00A  3.00us   Diodes Inc. Schottky Barrier Rectifier
.MODEL DI_1N5818 D  ( IS=263u RS=73.1m BV=30.0 IBV=1.00m
+ CJO=203p  M=0.333 N=1.90 TT=4.32u )


*SRC=1N5819;DI_1N5819;Diodes;Si;  40.0V  1.00A  3.00us   Diodes Inc. Schottky Barrier Rectifier
.MODEL DI_1N5819 D  ( IS=390n RS=0.115 BV=40.0 IBV=1.00m
+ CJO=203p  M=0.333 N=1.70 TT=4.32u )


*SRC=1N5819HW;DI_1N5819HW;Diodes;Si;  40.0V  1.00A  5.00ns   Diodes Inc.
Schottky
.MODEL DI_1N5819HW D  ( IS=191u RS=42.0m BV=40.0 IBV=1.00m
+ CJO=239p  M=0.333 N=1.70 TT=7.20n )


*SRC=B130L;DI_B130L;Diodes;Si;  30.0V  1.00A  5.00ns   Diodes Inc. Schottky
.MODEL DI_B130L D  ( IS=188u RS=18.5m BV=30.0 IBV=1.00m
+ CJO=331p  M=0.333 N=1.65 TT=7.20n )


*SRC=B130LAW;DI_B130LAW;Diodes;Si;  30.0V  1.00A  5.00ns   Diodes Inc.
Schottky
.MODEL DI_B130LAW D  ( IS=407u RS=75.5m BV=30.0 IBV=1.00m
+ CJO=119p  M=0.333 N=1.70 TT=7.20n )


*SRC=B130LB;DI_B130LB;Diodes;Si;  30.0V  1.00A  10.0ns   Diodes Inc.
Schottky
.MODEL DI_B130LB D  ( IS=458u RS=28.0m BV=30.0 IBV=1.00m
+ CJO=159p  M=0.333 N=1.70 TT=14.4n )


*
*Zetex PDS760 Spice Model v1.0 Last Revised 24/02/09
*
.MODEL PDS760 D IS=2.1E-7 N=1.02 ISR=2.6E-7 NR=1.1 BV=63 IBV=2E-4
+ NBV=2 IBVL=5.5E-7 NBVL=350 RS=0.016 CJO=1060E-12 VJ=1.1 M=0.53
+ EG=0.74 XTI=2 TRS1=4e-3
*
*$
*
*                (c)  2009 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA


*SRC=PDS1040CTL;Di_PDS1040CTL;Diodes;Si;  40.0V  10.0A  20.0ns   Diodes Inc. 10A Dual Low VF Schottky Barrier Rectifier Per Node
.MODEL Di_PDS1040CTL D  ( IS=21.5u RS=4.20m BV=40.0 IBV=200u
+ CJO=789p  M=0.333 N=1.28 TT=28.8n )


*SRC=PDS540;DI_PDS540;Diodes;Si;  40.0V  5.00A  15.0ns   Diodes Inc. 5A Schottky Barrier Rectifier
.MODEL DI_PDS540 D  ( IS=9.59u RS=10.7m BV=40.0 IBV=300u
+ CJO=727p  M=0.333 N=1.26 TT=21.6n )


*SRC=PDS835L;DI_PDS835L;Diodes;Si;  35.0V  8.00A  15.0ns   Diodes Inc. 8A Low VF Schottky Barrier Rectifier
.MODEL DI_PDS835L D  ( IS=42.9u RS=6.30m BV=35.0 IBV=1.40m
+ CJO=623p  M=0.333 N=1.43 TT=21.6n )


*SRC=B1100B;DI_B1100B;Diodes;Si;  100V  1.00A  5.00ns   Diodes Inc.
Schottky
.MODEL DI_B1100B D  ( IS=89.3u RS=42.2m BV=100 IBV=500n
+ CJO=66.3p  M=0.333 N=2.45 TT=7.20n )


*SRC=B120;DI_B120;Diodes;Si;  20.0V  1.00A  5.00ns   Diodes Inc. Schottky
.MODEL DI_B120 D  ( IS=39.6u RS=50.2m BV=20.0 IBV=500u
+ CJO=265p  M=0.333 N=1.70 TT=7.20n )


*SRC=B120B;DI_B120B;Diodes;Si;  20.0V  1.00A  5.00ns   Diodes Inc. Schottky
.MODEL DI_B120B D  ( IS=39.6u RS=50.2m BV=20.0 IBV=500u
+ CJO=265p  M=0.333 N=1.70 TT=7.20n )


*SRC=B130;DI_B130;Diodes;Si;  30.0V  1.00A  5.00ns   Diodes Inc. Schottky
.MODEL DI_B130 D  ( IS=39.6u RS=50.2m BV=30.0 IBV=500u
+ CJO=265p  M=0.333 N=1.70 TT=7.20n )


*SRC=B130B;DI_B130B;Diodes;Si;  30.0V  1.00A  5.00ns   Diodes Inc. Schottky
.MODEL DI_B130B D  ( IS=39.6u RS=50.2m BV=30.0 IBV=500u
+ CJO=265p  M=0.333 N=1.70 TT=7.20n )


*SRC=B140B;DI_B140B;Diodes;Si;  40.0V  1.00A  5.00ns   Diodes Inc. Schottky
.MODEL DI_B140B D  ( IS=39.6u RS=50.2m BV=40.0 IBV=500u
+ CJO=265p  M=0.333 N=1.70 TT=7.20n )


*SRC=B140HB;DI_B140HB;Diodes;Si;  40.0V  1.00A  10.0ns   Diodes Inc.
Schottky
.MODEL DI_B140HB D  ( IS=31.0u RS=42.1m BV=40.0 IBV=1.00m
+ CJO=159p  M=0.333 N=1.70 TT=14.4n )


*SRC=B140HW;DI_B140HW;Diodes;Si;  40.0V  1.00A  11.0ns   Diodes Incorporated Schottky diode
.MODEL DI_B140HW D  ( IS=123n RS=66.4m BV=40.0 IBV=40.0u
+ CJO=119p  M=0.333 N=1.07 TT=15.8n )


*SRC=B150;DI_B150;Diodes;Si;  50.0V  1.00A  5.00ns   Diodes Inc. Schottky
.MODEL DI_B150 D  ( IS=15.7u RS=42.0m BV=50.0 IBV=500u
+ CJO=133p  M=0.333 N=1.70 TT=7.20n )


*SRC=B150B;DI_B150B;Diodes;Si;  50.0V  1.00A  5.00ns   Diodes Inc. Schottky
.MODEL DI_B150B D  ( IS=15.7u RS=42.0m BV=50.0 IBV=500u
+ CJO=133p  M=0.333 N=1.70 TT=7.20n )


*SRC=B0520LW;DI_B0520LW;Diodes;Si;  20.0V  0.500A  5.00ns   Diodes Inc. Schottky
.MODEL DI_B0520LW D  ( IS=195u RS=49.4m BV=20.0 IBV=250u
+ CJO=199p  M=0.333 N=1.72 TT=7.20n )


*SRC=B0520WS;DI_B0520WS;Schottky rectifier 

*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=7OCT2011
*VERSION=1

.MODEL B0520WS D  ( IS=1.5u RS=0.16 ISR=3u BV=22.0 IBV=.5m 
+ CJO=107p  M=0.45 VJ=.38 N=0.907 TT=5.6n EG=.69 XTI=.3 TBV1=.0001 TRS1=.0048)

.SIMULATOR DEFAULT


*SRC=B0530W;DI_B0530W;Diodes;Si;  30.0V  0.500A  5.00ns   Diodes Inc. Schottky 
.MODEL DI_B0530W D  ( IS=47.4u RS=26.8m BV=30.0 IBV=130u 
+ CJO=225p  M=0.333 N=1.66 TT=7.20n )


*SRC=B0530WS;DI_B0530WS;Diodes;Si;  30.0V  0.500A  10.0ns   Diodes Inc. Schottky 
.MODEL DI_B0530WS D  ( IS=897u RS=72.9m BV=30.0 IBV=500u 
+ CJO=79.6p  M=0.333 N=2.85 TT=14.4n )


*SRC=B0540W;DI_B0540W;Diodes;Si;  40.0V  0.500A  10.0ns   Diodes Inc. Schottky 
.MODEL DI_B0540W D  ( IS=55.9p RS=0.125 BV=40.0 IBV=20.0u 
+ CJO=225p  M=0.333 N=0.700 TT=14.4n )


*SRC=B0540WS;DI_B0540WS;Diodes;Si;  40.0V  0.500A  5.00ns   Diodes, Inc. Schottky
.MODEL DI_B0540WS D  ( IS=685p RS=84.4m BV=40.0 IBV=5.00u
+ CJO=125p  M=0.333 N=1.70 TT=7.20n


*SRC=B1100;DI_B1100;Diodes;Si;  100V  1.00A  5.00ns   Diodes Inc. Schottky 
.MODEL DI_B1100 D  ( IS=89.3u RS=42.2m BV=100 IBV=500n 
+ CJO=66.3p  M=0.333 N=2.45 TT=7.20n )


*SRC=B1100LB;DI_B1100LB;Diodes;Si;  100V  1.00A  10.0ns   Diodes Inc.
Schottky
.MODEL DI_B1100LB D  ( IS=20.0n RS=24.7m BV=100 IBV=500n
+ CJO=225p  M=0.333 N=1.22 TT=14.4n )


*SRC=B140;DI_B140;Diodes;Si;  40.0V  1.00A  5.00ns   Diodes Inc. Schottky
.MODEL DI_B140 D  ( IS=39.6u RS=50.2m BV=40.0 IBV=500u
+ CJO=265p  M=0.333 N=1.70 TT=7.20n )


*SRC=B160;DI_B160;Diodes;Si;  60.0V  1.00A  5.00ns   Diodes Inc. Schottky
.MODEL DI_B160 D  ( IS=15.7u RS=42.0m BV=60.0 IBV=500u
+ CJO=133p  M=0.333 N=1.70 TT=7.20n )


*SRC=SB120;DI_SB120;Diodes;Si;  20.0V  1.00A  5.00ns   Diodes Inc. Schottky
.MODEL DI_SB120 D  ( IS=31.5u RS=49.2m BV=20.0 IBV=500u
+ CJO=239p  M=0.333 N=1.70 TT=7.20n )


*SRC=SB130;DI_SB130;Diodes;Si;  30.0V  1.00A  5.00ns   Diodes Inc. Schottky
.MODEL DI_SB130 D  ( IS=31.5u RS=49.2m BV=30.0 IBV=500u
+ CJO=239p  M=0.333 N=1.70 TT=7.20n )


SDM2U30CSP Spice Model v1.0 Last Revised 8/11/2015  Diodes Inc SUPER BARRIER RECTIFIER
 SIMULATOR=SPICE3
.MODEL DI_SDM02U30LP3 D  ( IS=10.49u RS=43.16m BV=100.00 IBV=200.00u
+ CJO=375.0p M=333.0m N=1.146 TT=21.6n EG=480.0m VJ=600.0m )

*                (c)  2015 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan


*SRC=1N5817;DI_1N5817;Diodes;Si;  20.0V  1.00A  3.00us   Diodes Inc. Schottky Barrier Rectifier
.MODEL DI_1N5817 D  ( IS=870u RS=81.3m BV=20.0 IBV=1.00m
+ CJO=203p  M=0.333 N=1.81 TT=4.32u )


*SRC=SD103AWS;DI_SD103AWS;Diodes;Si;  40.0V  0.350A  10.0ns   Diodes Inc.
Schottky
.MODEL DI_SD103AWS D  ( IS=8.65u RS=0.120 BV=40.0 IBV=5.00u
+ CJO=53.0p  M=0.333 N=1.70 TT=14.4n )


*SBRT20U50SLP Spice Model v1.0 Last Revised 04/16/2014  Diodes Inc Trench SUPER BARRIER RECTIFIER

.MODEL DI_SBRT20U50SLP D  ( IS=60.50u RS=6.029m BV=55.00 IBV=10.00
+ CJO=13.00n M=473.3m N=1.017 TT=10.00n EG=480.0m VJ=20.19m )

*                (c)  2014 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan


*SBRT10U50SP5 Spice Model v1.0 Last Revised 11/06/2014  Diodes Inc TRENCH SUPER BARRIER RECTIFIER
*SIMULATOR=SPICE3

.MODEL DI_SBRT10U50SP5 D  ( IS=47.29u RS=7.545m BV=55.00 IBV=10.00
+ CJO=5.815n M=426.5m N=1.010 TT=38.20n EG=480.0m VJ=35.52m )

*                (c)  2014 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan


*SBRT10M50SP5 Spice Model v1.0 Last Revised 11/06/2014  Diodes Inc TRENCH SUPER BARRIER RECTIFIER
*SIMULATOR=SPICE3

.MODEL DI_SBRT10M50SP5 D  ( IS=29.37u RS=7.908m BV=55.00 IBV=10.00
+ CJO=5.720n M=433.9m N=1.018 TT=36.10n EG=480.0m VJ=40.85m )

*                (c)  2014 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan


*SBRT5A50SAF Spice Model v1.0 Last Revised 04/11/2014  Diodes Inc Trench SUPER BARRIER RECTIFIER

.MODEL DI_SBRT5A50SAF D  ( IS=16.70u RS=25.96m BV=61 IBV=10
+ CJO=1.986n  M=388.7m N=1.052 TT=10.00n  EG=480.0m VJ=11.34m )

*                (c)  2014 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan


*SBRT3U40P1 Spice Model v1.0 Last Revised 05/28/2014  Diodes Inc TRENCH SUPER BARRIER RECTIFIER
*SIMULATOR=SPICE3

.MODEL DI_SBRT3U40P1 D  ( IS=11.26u RS=31.17m BV=45.00 IBV=10.00
+ CJO=2.602n M=426.4m N=1.031 TT=12.40n EG=480.0m VJ=6.740m )

*                (c)  2014 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan


*SBRT60U100CT Spice Model v1.0 Last Revised 04/15/2014  Diodes Inc Trench SUPER BARRIER RECTIFIER
*SIMULATOR=SPICE3

.MODEL DI_SBRT60U100CT D  ( IS=25.99u RS=12.84m BV=110.0 IBV=10.00
+ CJO=17.15n M=505.1m N=1.027 TT=44.60n EG=480.0m VJ=10.13m )

*                (c)  2014 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan


*SBRT40V100CT Spice Model v1.0 Last Revised 05/14/2014  Diodes Inc TRENCH SUPER BARRIER RECTIFIER
*SIMULATOR=SPICE3

.MODEL DI_SBRT40V100CT D  ( IS=27.99u RS=16.00m BV=110.0 IBV=10.00
+ CJO=11.96n M=452.9m N=1.016 TT=30.30n EG=480.0m VJ=3.448m )

*                (c)  2014 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan


*SBRT20M60SP5 Spice Model v1.0 Last Revised 05/23/2014  Diodes Inc TRENCH SUPER BARRIER RECTIFIER
*SIMULATOR=SPICE3

.MODEL DI_SBRT20M60SP5 D  ( IS=17.25u RS=7.887m BV=66.00 IBV=10.00
+ CJO=14.41n M=526.0m N=1.019 TT=44.20n EG=480.0m VJ=21.52m )

*                (c)  2014 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan


*SBRT20U60SP5 Spice Model v1.0 Last Revised 05/22/2014  Diodes Inc TRENCH SUPER BARRIER RECTIFIER
*SIMULATOR=SPICE3

.MODEL DI_SBRT20U60SP5 D  ( IS=53.48u RS=7.620m BV=66.00 IBV=10.00
+ CJO=14.07n M=529.3m N=1.019 TT=43.20n EG=480.0m VJ=23.66m )

*                (c)  2014 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan


*SBRT15U100SP5 Spice Model v1.0 Last Revised 05/22/2014  Diodes Inc TRENCH SUPER BARRIER RECTIFIER
*SIMULATOR=SPICE3

.MODEL DI_SBRT15U100SP5 D  ( IS=14.76u RS=19.00m BV=110.00 IBV=10.00
+ CJO=10.76n M=519.9m N=1.023 TT=29.10n EG=480.0m VJ=14.89m )

*                (c)  2014 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan


*SBRT25M50SLP Spice Model v1.0 Last Revised 05/20/2014  Diodes Inc TRENCH SUPER BARRIER RECTIFIER
*SIMULATOR=SPICE3

.MODEL DI_SBRT25M50SLP D  ( IS=21.40u RS=5.797m BV=55.00 IBV=10.00
+ CJO=21.87n M=530.5m N=1.014 TT=59.50n EG=480.0m VJ=19.30m )

*                (c)  2014 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan


*SBRT3U45SA Spice Model v1.0 Last Revised 04/22/2014  Diodes Inc TRENCH SUPER BARRIER RECTIFIER
*SIMULATOR=SPICE3

.MODEL DI_SBRT3U45SA D  ( IS=16.77u RS=32.93m BV=50.50 IBV=10.00
+ CJO=1.717n M=325.5m N=1.065 TT=10.00n EG=480.0m VJ=1.538m )

*                (c)  2014 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan


*SBRT3M40SA Spice Model v1.0 Last Revised 04/21/2014  Diodes Inc TRENCH SUPER BARRIER RECTIFIER
*SIMULATOR=SPICE3

.MODEL DI_SBRT3M40SA D  ( IS=8.986u RS=29.32m BV=45.00 IBV=10.00
+ CJO=1.880n M=259.7m N=1.047 TT=10.00n EG=480.0m VJ=140.3u )

*                (c)  2014 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan


*TITLE=SBRT30u45CT
*DATE=28/1/2016
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*VERSION=1

.MODEL SBRT30U45CT D(IS=100u RS=.005 BV=48 IBV=110u CJO=4000p M=.6 VJ=.4 N=1.05 ISR=20n IKF=15 TRS1=4m XTI1=3 TT=85n EG=.51 NBV=200)


*                (c)  2016 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*SBRT5A50SA Spice Model v1.0 Last Revised 04/23/2014  Diodes Inc TRENCH SUPER BARRIER RECTIFIER
*SIMULATOR=SPICE3

.MODEL DI_SBRT5A50SA D  ( IS=11.30u RS=22.68m BV=56.00 IBV=10.00
+ CJO=1.998n M=448.8m N=1.040 TT=10.00n EG=480.0m VJ=33.67m )

*                (c)  2014 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan


*SRC=SBR05U20LP;DI_SBR05U20LP;Diodes;Si;  20.0V  0.500A  40.0ns   Diodes INC Schottky rectifier
.MODEL DI_SBR05U20LP D  ( IS=2.83u RS=0.188 BV=20.0 IBV=20.0u
+ CJO=53.0p  M=0.333 N=1.18 TT=57.6n )


*SRC=SBR10U40CT;DI_SBR10U40CT;Diodes;Si;  40.0V  5.00A  35.0ns   Diodes INC SBR rectifier
.MODEL DI_SBR10U40CT D  ( IS=6.83m RS=6.69u BV=40.0 IBV=0.100
+ CJO=593p  M=0.333 N=7.19 TT=50.4n )


*DIODES_INC_SPICE_MODEL SBR10U45SP5
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=3/10/2012
*VERSION=1


.MODEL SBR10U45SP5 D( IS=28E-6 RS=10m BV=46.0 IBV=300u N=.97 TT=10n EG=.48 TRS1=4m CJO=12590p M=.8 VJ=.4)


*                (c)  2012 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*


*SRC=SBR130S3;SBR130S3;Diodes;Si;  30.0V  1.00A  39.0ns   Diodes 
.MODEL SBR130S3 D  ( IS=7.30u RS=80.3m BV=30.0 IBV=12.2u
+ CJO=416p  M=0.333 N=1.09 TT=56.2n


*SBR1U150SA Spice Model v1.0 Last Revised 05/07/2014  Diodes Inc SURFACE MOUNT SUPER BARRIER RECTIFIER

.MODEL DI_SBR1U150SA D  ( IS=1.020m RS=1.983u BV=165.00 IBV=10.00
+ CJO=1.164n M=461.9m N=3.651 TT=10.00n EG=480.0m VJ=12.68m )

*                (c)  2014 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan


*TITLE: SBR1U40LP
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=27Apr2012
*VERSION=1
*PIN 1=Anode 2=Cathode

.SUBCKT SBR1U40LP 1 2
M1 3 4 5 5 NMOD
D1 5 3 DMOD
R1 1 4 1u
C1 3 5 1p
R2 1 5 1u
R3 3 2 1u
.MODEL NMOD NMOS(LEVEL=3 VTO=.24 TOX=90E-10 NSUB=6E+15 KP=40 NFS=.2E+12 RS=0.3)
.MODEL DMOD D(IS=5.7E-7 TT=3u N=1.74)
.ENDS

.SIMULATOR DEFAULT


*                (c)  2012 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*SRC=SBR20A200CTB;DI_SBR20A200CTB;Diodes;Si;  200V  20.0A  20.0ns   Diodes INC Schottky rectifier
.MODEL DI_SBR20A200CTB D  ( IS=4.16m RS=1.34m BV=200 IBV=3.28u
+ CJO=514p  M=0.333 N=3.98 TT=28.8n


*SRC=SBR20U150CT;DI_SBR20U150CT;Diodes;Si;  150V  20.0A  30.0ns   Diodes Inc. SBR/ SKY
.MODEL DI_SBR20U150CT D  ( IS=3.25m RS=2.57m BV=150 IBV=500u
+ CJO=11.3n  M=0.333 N=3.28 TT=43.2n )


*SRC=SBR20U150CTFP;DI_SBR20U150CTFP;Diodes;Si;  150V  20.0A  30.0ns   Diodes Inc. SBR/ SKY
.MODEL DI_SBR20U150CTFP D  ( IS=3.25m RS=2.57m BV=150 IBV=500u
+ CJO=11.3n  M=0.333 N=3.28 TT=43.2n )


*SRC=SBR2A30P1;DI_SBR2A30P1;Diodes;Si;  30.0V  2.00A  12.0ns   Diodes INC Schottky rectifier
.MODEL DI_SBR2A30P1 D  ( IS=78.9u RS=29.8m BV=30.0 IBV=60.0u
+ CJO=806p  M=0.333 N=1.25 TT=17.3n)


*SRC=SBR2A40P1;DI_SBR2A40P1;Diodes;Si;  40.0V  2.00A  12.0ns   Diodes INC Schottky rectifier
.MODEL DI_SBR2A40P1 D  ( IS=17.0u RS=28.8m BV=40.0 IBV=15.9u
+ CJO=705p  M=0.333 N=1.17 TT=17.3n)


*SRC=SBR2M30P1;DI_SBR2M30P1;Diodes;Si;  30.0V  2.00A  12.0ns   Diodes INC Schottky rectifier
.MODEL DI_SBR2M30P1 D  ( IS=17.0u RS=28.8m BV=30.0 IBV=20.0u
+ CJO=865p  M=0.333 N=1.17 TT=17.3n)


*SRC=SBR3045CT;DI_SBR3045CT;Diodes;Si;  45.0V  30.0A  35.2ns   Diodes Inc. SBR/ SKY
.MODEL DI_SBR3045CT D  ( IS=2.03m RS=2.30m BV=45.0 IBV=500u
+ CJO=1.87n  M=0.333 N=1.66 TT=50.7n )


*SRC=SBR30A45CT;DI_SBR30A45CT;Diodes;Si;  45.0V  30.0A  35.2ns   Diodes Inc. SBR/ SKY
.MODEL DI_SBR30A45CT D  ( IS=120u RS=1.66m BV=45.0 IBV=500u
+ CJO=1.87n  M=0.333 N=1.18 TT=50.7n )


*SRC=SBR30U30CT;DI_SBR30U30CT;Diodes;Si;  20.0V  30.0A  35.0ns   Diodes INC Schottky rectifier
.MODEL DI_SBR30U30CT D  ( IS=580u RS=3.06m BV=20.0 IBV=230u
+ CJO=997p  M=0.333 N=1.35 TT=50.4n


*SRC=SBR3A40SA;DI_SBR3A40SA;Diodes;Si;  40.0V  3.00A  12.0ns   Diodes Inc. SBR/ SKY
.MODEL DI_SBR3A40SA D  ( IS=165u RS=18.5m BV=40.0 IBV=400u
+ CJO=57.0p  M=0.333 N=1.26 TT=17.3n )


*SRC=SBR3M30P1;DI_SBR3M30P1;Diodes;Si;  30.0V  3.00A  12.0ns   Diodes INC Schottky rectifier
.MODEL DI_SBR3M30P1 D  ( IS=11.4u RS=10.6m BV=30.0 IBV=19.0u
+ CJO=865p  M=0.333 N=1.13 TT=17.3n)


*SRC=SBR3U100LP;DI_SBR3U100LP;Diodes;Si;  100V  3.00A  12.9ns   Diodes Inc. SBR/ SKY
.MODEL DI_SBR3U100LP D  ( IS=8.73n RS=34.4m BV=100 IBV=16.0u
+ CJO=141p  M=0.333 N=0.700 TT=18.6n )


*SRC=SBR3U150LP;DI_SBR3U150LP;Diodes;Si;  150V  3.00A  11.5ns   Diodes Inc. SBR/ SKY
.MODEL DI_SBR3U150LP D  ( IS=311u RS=22.4m BV=150 IBV=600n
+ CJO=178p  M=0.333 N=2.78 TT=16.6n )


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=02/07/2009
*VERSION=3
*PIN_ORDER   anode cathode
*
.SUBCKT SBR3U20SA 1 2
D1 1 3 Dmod
R1 3 2 95
L1 3 2 1.8E-9
.MODEL Dmod D (IS=8E-5 N=1.1 ISR=5E-8 NR=1.0 BV=21 IBV=1E-3 NBV=5
+ IBVL=2E-6 NBVL=500 RS=0.015 CJO=3500E-12 VJ=0.38 M=0.7 EG=0.5 XTI=2
+ TRS1=0.003 TT=3e-9)
.ENDS
*
*$


*SRC=SBR3U30P1;DI_SBR3U30P1;Diodes;Si;  30.0V  3.00A  12.0ns   Diodes INC Schottky rectifier
.MODEL DI_SBR3U30P1 D  ( IS=1.14m RS=11.7m BV=30.0 IBV=146u
+ CJO=951p  M=0.333 N=1.71 TT=17.3n)


*TITLE: SBR3U40P1
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=1May2012
*VERSION=1


.MODEL SBR3U40P1 D( IS=20E-6 RS=35m BV=41.0 IBV=70u N=1 TT=10n EG=.53 TRS1=5m CJO=500p M=.6 VJ=.4)



*                (c)  2012 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*SRC=SBR40U45CT;DI_SBR40U45CT;Diodes;Si;  45.0V  40.0A  74.0ns   Diodes INC Schottky rectifier
.MODEL DI_SBR40U45CT D  ( IS=30.5m RS=1.77m BV=45.0 IBV=250u
+ CJO=8.18n  M=0.333 N=2.24 TT=107n


.MODEL SBR4U130LP D (
+ IS=15.568E-6
+ N=1.031
+ RS=20e-3
+ IKF=257.62E-6
+ CJO=5.0982E-9
+ M=1.0812
+ VJ=68.681E-3
+ ISR=38.247E-9
+ NR=4.9950
+ BV=130.27
+ IBV=100.00E-6
+ XTI=2.89 )


*SBR60A300CT Spice Model v1.0 Last Revised 12/17/2014  Diodes Inc SUPER BARRIER RECTIFIER
 SIMULATOR=SPICE3
.MODEL DI_SBR60A300CT D  ( IS=3.829u RS=25.27m BV=330.0 IBV=10.00
+ CJO=1.006n M=557.8m N=1.413 TT=25.00n EG=480.0m VJ=826.8m )

*                (c)  2014 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan


*SRC=SBR60A60CT;DI_SBR60A60CT;Diodes;Si;  60.0V  60.0A  68.0ns   Diodes INC Schottky rectifier
.MODEL DI_SBR60A60CT D  ( IS=1.44m RS=1.34m BV=60.0 IBV=70.0u
+ CJO=7.24n  M=0.333 N=1.72 TT=97.9n )


*SBR10U200P5 Spice Model v1.0 Last Revised 2/24/2015  Diodes Inc SUPER BARRIER RECTIFIER
 SIMULATOR=SPICE3
.MODEL DI_SBR10U200P5 D  ( IS=35.49n RS=15.06m BV=220.0 IBV=10.00
+ CJO=1.190n M=412.1m N=1.366 TT=21.70n EG=480.0m VJ=61.27m )

*                (c)  2015 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan


*SRC=SBR8U60P5;;Diodes;Si;  60.0V  8.00A  25.0ns   Diodes INC SBR rectifier
.MODEL  D  ( IS=75.3u RS=20.1m BV=60.0 IBV=600u
+ CJO=13.3n  M=0.333 N=1.10 TT=36.0n )


*SBR40U300CTB Spice Model v1.0 Last Revised 12/17/2014  Diodes Inc SUPER BARRIER RECTIFIER
 SIMULATOR=SPICE3
.MODEL DI_SBR40U300CTB D  ( IS=233.1n RS=16.34m BV=330.0 IBV=10.00
+ CJO=1.055n M=487.5m N=1.424 TT=33.00n EG=480.0m VJ=504.9m )

*                (c)  2014 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan


*TITLE=SBR1U400P1
*DATE=12/03/2012
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*VERSION=1


.MODEL SBR1U400P1 D(IS=70n RS=.05 BV=401 IBV=50u CJO=65p M=.41 VJ=.41 N=1.25 ISR=20n IKF=.51m TRS1=0 XTI1=3 TT=85n EG=.75 TIKF=.1)



*                (c)  2011 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*TITLE=SBR1U200P1
*DATE=5/02/2016
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*VERSION=2



.SUBCKT SBR1U200P1 1 2 
D1 1 2 Dsch
D2 1 2 Dpn 
.MODEL Dsch D(IS=55n RS=1.8 BV=201 IBV=50u CJO=355p M=.41 VJ=.41 N=1.05 ISR=20n IKF=10m TRS1=.001 XTI1=3 TT=50n EG=.6 TIKF=.1)
.model Dpn D(IS=8p IKF=30m BV=250 N=1 TT=50n EG=1.12 RS=.008 ISR=.1n)
.ends



*                (c)  2016 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*SBR12U120P5 Spice Model v1.0 Last Revised 3/28/2016  Diodes Inc SUPER BARRIER RECTIFIER
 SIMULATOR=SPICE3
.MODEL DI_SBR12U120P5 D  ( IS=3.440u RS=40.05m BV=135.0 IBV=10.00
+ CJO=3.462n M=3.523 N=1.047 TT=10.00n EG=480.0m VJ=682.4m )

*                (c)  2015 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*   Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan


*TITLE: SBR2U150SA
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=16Dec2014
*VERSION=1


.SUBCKT SBR2U150SA 1 2 

D1 1 2 Dsch
D2 1 2 Dpn 
.MODEL Dsch D ( IS=4u RS=.3 BV=160.0 IBV=150.0u CJO=951p  M=0.333 N=1.145 TT=17.3n EG=.5 TRS1=3m NBV=10 IKF=200m)
.model Dpn D(IS=2p IKF=20000m BV=160 TT=50n EG=1.12 RS=.02 ISR=1n)
.ENDS



*                (c)  2014 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


The SBR12U45LH uses SBR patented technology that offers ultra low VF to reduce forward power loss and improve efficiency. Encapsulated in the new PDI-5SP package with a 0.75mm low height profile and protruding leads for easy soldering, it is specially suited for use as a bypass diode in solar panels.


*TITLE: SBR2U10LP
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=17Dec2014
*VERSION=1



.MODEL SBR1U30CSP D( IS=5.5u RS=45m BV=32 IBV=150.0u CJO=750p  M=1 VJ=.45 N=1.05 TT=30n EG=.5 TRS1=5m IKF=85m)


*                (c)  2014 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*TITLE: SBR3150SB
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=16Dec2014
*VERSION=1


.SUBCKT SBR3150SB 1 2 
D1 1 2 Dsch
D2 1 2 Dpn 
.MODEL Dsch D ( IS=11u RS=.22 BV=160.0 IBV=150.0u CJO=951p  M=0.333 N=1.145 TT=17.3n EG=.47 TRS1=2m NBV=10 IKF=120m)
.model Dpn D(IS=2p IKF=100 BV=160 TT=50n EG=1.1 RS=.011 ISR=1n)
.ENDS




*                (c)  2014 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*SBR3U60P1 Spice Model v1.0 Last Revised 04/29/2014  Diodes Inc SUPER BARRIER RECTIFIER

.MODEL DI_SBR3U60P1 D  ( IS=1.638u RS=62.49m BV=66.00 IBV=10.00
+ CJO=1.853n M=761.6m N=1.048 TT=10.00n EG=480.0m VJ=173.8m )

*                (c)  2014 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan


*SBRT15U50SP5 Spice Model v1.0 Last Revised 10/30/2014  Diodes Inc TRENCH SUPER BARRIER RECTIFIER
*SIMULATOR=SPICE3

.MODEL DI_SBRT15U50SP5 D  ( IS=74.23u RS=5.775m BV=55.00 IBV=10.00
+ CJO=14.41n M=489.9m N=1.023 TT=49.80n EG=480.0m VJ=20.30m )

*                (c)  2014 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan


*TITLE: SBR2U10LP
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=17Dec2014
*VERSION=1



.MODEL SBR1U30CSP D( IS=5.5u RS=50m BV=32 IBV=150.0u CJO=750p  M=1 VJ=.45 N=1.05 TT=30n EG=.5 TRS1=5m IKF=85m)


*                (c)  2014 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*TITLE: SBR2U10LP
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=9Jun2014
*VERSION=1



.MODEL SBR2U10LP D( IS=26u RS=20m BV=11 IBV=150.0u CJO=790p  M=0.65 VJ=.4 N=1.05 TT=50n EG=.5 TRS1=6m ISR=50u)
* 

*                (c)  2014 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


.MODEL SBR02U100LP D (
+ IS=37.999E-9
+ N=1.2423
+ RS=1.0042
+ IKF=6.4683E-3
+ CJO=138.07E-12
+ M=1.4985
+ VJ=.79033
+ ISR=7.0384E-12
+ NR=4.9950
+ BV=103
+ IBV=1.0000E-3 
+ XTI=2.67 )


*SBR0230T5 Spice Model v1.0 Last Revised 1/12/2016  Diodes Inc SUPER BARRIER RECTIFIER
 SIMULATOR=SPICE3
.MODEL DI_SDM02U30LP3 D  ( IS=54.13n RS=378.1m BV=50.00 IBV=10.00
+ CJO=237.7p M=526.0m N=1.032 TT=10.00n EG=480.0m VJ=12.71m )

*                (c)  2015 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan


*TITLE: SBR2U30P1
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=31Jan2012
*VERSION=2
*PIN 1=Anode 2=Cathode


.MODEL SBR2U30P1 D( IS=60u RS=25m BV=32.0 IBV=150.0u CJO=951p  M=0.333 N=1.14 TT=17.3n EG=.5 TRS1=3m NBV=10)


*                (c)  2011 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*********************************************************************************************************************
*SRC=10A01;DI_10A01;Diodes;Si;  50.0V  10.0A  3.00us   Diodes Inc. 10A Rectifier
.MODEL DI_10A01 D  ( IS=844n RS=2.06m BV=50.0 IBV=10.0u
+ CJO=277p  M=0.333 N=2.06 TT=4.32u )
*********************************************************************************************************************


*********************************************************************************************************************
*SRC=10A02;DI_10A02;Diodes;Si;  100V  10.0A  3.00us   Diodes Inc. 10A Rectifier
.MODEL DI_10A02 D  ( IS=844n RS=2.06m BV=100 IBV=10.0u
+ CJO=277p  M=0.333 N=2.06 TT=4.32u )
*********************************************************************************************************************


*********************************************************************************************************************
*SRC=10A04;DI_10A04;Diodes;Si;  400V  10.0A  3.00us   Diodes Inc. 10A Rectifier
.MODEL DI_10A04 D  ( IS=844n RS=2.06m BV=400 IBV=10.0u
+ CJO=277p  M=0.333 N=2.06 TT=4.32u )
*********************************************************************************************************************


*********************************************************************************************************************
*SRC=10A05;DI_10A05;Diodes;Si;  600V  10.0A  3.00us   Diodes Inc. 10A Rectifier
.MODEL DI_10A05 D  ( IS=844n RS=2.06m BV=600 IBV=10.0u
+ CJO=148p  M=0.333 N=2.06 TT=4.32u )
*********************************************************************************************************************


*********************************************************************************************************************
*SRC=10A06;DI_10A06;Diodes;Si;  800V  10.0A  3.00us   Diodes Inc. 10A Rectifier
.MODEL DI_10A06 D  ( IS=844n RS=2.06m BV=800 IBV=10.0u
+ CJO=148p  M=0.333 N=2.06 TT=4.32u )
*********************************************************************************************************************


*********************************************************************************************************************
*SRC=10A07;DI_10A07;Diodes;Si;  1.00kV  10.0A  3.00us   Diodes Inc. 10A Rectifier
.MODEL DI_10A07 D  ( IS=844n RS=2.06m BV=1.00k IBV=10.0u
+ CJO=148p  M=0.333 N=2.06 TT=4.32u )
*********************************************************************************************************************


***************************************************************************************************************************************
*SRC=1N4002G;DI_1N4002G;Diodes;Si;  100V  1.00A  2.00us   Diodes Inc. Glass Passivated Rectifier
.MODEL DI_1N4002G D  ( IS=65.4p RS=42.2m BV=100 IBV=5.00u
+ CJO=14.8p  M=0.333 N=1.36 TT=2.88u )
***************************************************************************************************************************************


*SRC=1N4003;DI_1N4003;Diodes;Si;  200V  1.00A  3.00us   Diodes, Inc. diode
.MODEL DI_1N4003 D  ( IS=76.9p RS=42.0m BV=200 IBV=5.00u
+ CJO=39.8p  M=0.333 N=1.45 TT=4.32u )


***************************************************************************************************************************************
*SRC=1N4003G;DI_1N4003G;Diodes;Si;  200V  1.00A  2.00us   Diodes Inc. Glass Passivated Rectifier
.MODEL DI_1N4003G D  ( IS=65.4p RS=42.2m BV=200 IBV=5.00u
+ CJO=14.8p  M=0.333 N=1.36 TT=2.88u )
***************************************************************************************************************************************


*SRC=1N4004;DI_1N4004;Diodes;Si;  400V  1.00A  3.00us   Diodes, Inc. diode
.MODEL DI_1N4004 D  ( IS=76.9p RS=42.0m BV=400 IBV=5.00u
+ CJO=39.8p  M=0.333 N=1.45 TT=4.32u )


***************************************************************************************************************************************
*SRC=1N4004G;DI_1N4004G;Diodes;Si;  400V  1.00A  2.00us   Diodes Inc. Glass Passivated Rectifier
.MODEL DI_1N4004G D  ( IS=65.4p RS=42.2m BV=400 IBV=5.00u
+ CJO=14.8p  M=0.333 N=1.36 TT=2.88u )
***************************************************************************************************************************************


***************************************************************************************************************************************
*SRC=1N4005G;DI_1N4005G;Diodes;Si;  600V  1.00A  2.00us   Diodes Inc. Glass Passivated Rectifier
.MODEL DI_1N4005G D  ( IS=65.4p RS=42.2m BV=600 IBV=5.00u
+ CJO=14.8p  M=0.333 N=1.36 TT=2.88u )
***************************************************************************************************************************************


*SRC=1N4006;DI_1N4006;Diodes;Si;  800V  1.00A  3.00us   Diodes, Inc. diode
.MODEL DI_1N4006 D  ( IS=76.9p RS=42.0m BV=800 IBV=5.00u
+ CJO=26.5p  M=0.333 N=1.45 TT=4.32u )


***************************************************************************************************************************************
*SRC=1N4006G;DI_1N4006G;Diodes;Si;  800V  1.00A  2.00us   Diodes Inc. Glass Passivated Rectifier
.MODEL DI_1N4006G D  ( IS=65.4p RS=42.2m BV=800 IBV=5.00u
+ CJO=14.8p  M=0.333 N=1.36 TT=2.88u )
***************************************************************************************************************************************


***************************************************************************************************************************************
*SRC=1N4007G;DI_1N4007G;Diodes;Si;  1.00kV  1.00A  2.00us   Diodes Inc. Glass Passivated Rectifier
.MODEL DI_1N4007G D  ( IS=65.4p RS=42.2m BV=1.00k IBV=5.00u
+ CJO=14.8p  M=0.333 N=1.36 TT=2.88u )
**************************************************************************************************************************************


*SRC=6A05;DI_6A05;Diodes;Si;  50.0V  6.00A  2.00us   Diodes Inc. 
.MODEL DI_6A05 D  ( IS=52.4n RS=7.00m BV=50.0 IBV=10.0u
+ CJO=60.0p  M=0.333 N=1.70 TT=2.88u )


*SRC=6A1;DI_6A1;Diodes;Si;  100V  6.00A  2.00us   Diodes Inc. 
.MODEL DI_6A1 D  ( IS=52.4n RS=7.00m BV=100 IBV=10.0u
+ CJO=60.0p  M=0.333 N=1.70 TT=2.88u )


*SRC=6A2;DI_6A2;Diodes;Si;  200V  6.00A  2.00us   Diodes Inc. 
.MODEL DI_6A2 D  ( IS=52.4n RS=7.00m BV=200 IBV=10.0u
+ CJO=60.0p  M=0.333 N=1.70 TT=2.88u )


*SRC=6A4;DI_6A4;Diodes;Si;  400V  6.00A  2.00us   Diodes Inc. 
.MODEL DI_6A4 D  ( IS=52.4n RS=7.00m BV=400 IBV=10.0u
+ CJO=60.0p  M=0.333 N=1.70 TT=2.88u )


*SRC=6A6;DI_6A6;Diodes;Si;  600V  6.00A  2.00us   Diodes Inc. 
.MODEL DI_6A6 D  ( IS=52.4n RS=7.00m BV=600 IBV=10.0u
+ CJO=60.0p  M=0.333 N=1.70 TT=2.88u )


*SRC=6A8;DI_6A8;Diodes;Si;  800V  6.00A  2.00us   Diodes Inc. 
.MODEL DI_6A8 D  ( IS=52.4n RS=7.00m BV=800 IBV=10.0u
+ CJO=60.0p  M=0.333 N=1.70 TT=2.88u )


*SRC=DFLR1600;DI_DFLR1600;Diodes;Si;  600V  1.00A  3.00us   Diodes Inc Standard Recovery Rectifier
.MODEL DI_DFLR1600 D  ( IS=5.90n RS=44.7m BV=600 IBV=3.00u
+ CJO=18.5p  M=0.333 N=1.88 TT=4.32u )


*SRC=PDR3G;DI_PDR3G;Diodes;Si;  400V  3.00A  3.09us   Diodes Inc. Standard Recovery Rectifier
.MODEL DI_PDR3G D  ( IS=5.82n RS=13.9m BV=400 IBV=10.0u
+ CJO=38.5p  M=0.333 N=1.70 TT=4.45u )


*SRC=PDR5G;DI_PDR5G;Diodes;Si;  400V  5.00A  3.32us   Diodes Inc. Standard Recovery Rectifier
.MODEL DI_PDR5G D  ( IS=8.05n RS=8.40m BV=400 IBV=10.0u
+ CJO=75.6p  M=0.333 N=1.70 TT=4.78u )


*SRC=S1A;DI_S1A;Diodes;Si;  50.0V  1.00A  3.00us   Diodes Inc. Rectifier
.MODEL DI_S1A D  ( IS=7.31e-018 RS=42.0m BV=50.0 IBV=5.00u
+ CJO=42.4p  M=0.333 N=0.775 TT=4.32u )


*SRC=S1AB;DI_S1AB;Diodes;Si;  50.0V  1.00A  3.00us   Diodes Inc. Rectifier
.MODEL DI_S1AB D  ( IS=7.31e-018 RS=42.0m BV=50.0 IBV=5.00u
+ CJO=42.4p  M=0.333 N=0.775 TT=4.32u )


*SRC=S1B;DI_S1B;Diodes;Si;  100V  1.00A  3.00us   Diodes Inc. Rectifier
.MODEL DI_S1B D  ( IS=7.31e-018 RS=42.0m BV=100 IBV=5.00u
+ CJO=42.4p  M=0.333 N=0.775 TT=4.32u )


*SRC=S1BB;DI_S1BB;Diodes;Si;  100V  1.00A  3.00us   Diodes Inc. Rectifier
.MODEL DI_S1BB D  ( IS=7.31e-018 RS=42.0m BV=100 IBV=5.00u
+ CJO=42.4p  M=0.333 N=0.775 TT=4.32u )


*SRC=S1D;DI_S1D;Diodes;Si;  200V  1.00A  3.00us   Diodes Inc. Rectifier
.MODEL DI_S1D D  ( IS=7.31e-018 RS=42.0m BV=200 IBV=5.00u
+ CJO=42.4p  M=0.333 N=0.775 TT=4.32u )


*SRC=S1DB;DI_S1DB;Diodes;Si;  200V  1.00A  3.00us   Diodes Inc. Rectifier
.MODEL DI_S1DB D  ( IS=7.31e-018 RS=42.0m BV=200 IBV=5.00u
+ CJO=42.4p  M=0.333 N=0.775 TT=4.32u )


*TITLE=S1G-13-F
*DATE=19/11/2013
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*VERSION=1



.model S1G-13-F  D(IS=.0005n RS=0.03 CJO=17p M=0.5 VJ=0.75 N=1.1 IKF=.15 ISR=.01u
+ BV=401 IBV=100u TT=150n EG=.95 TRS1=.1m)



*                (c)  2013 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL



*SRC=S1GB;DI_S1GB;Diodes;Si;  400V  1.00A  3.00us   Diodes Inc. Rectifier
.MODEL DI_S1GB D  ( IS=7.31e-018 RS=42.0m BV=400 IBV=5.00u
+ CJO=42.4p  M=0.333 N=0.775 TT=4.32u )


*SRC=S1J;DI_S1J;Diodes;Si;  600V  1.00A  3.00us   Diodes Inc. Rectifier
.MODEL DI_S1J D  ( IS=7.31e-018 RS=42.0m BV=600 IBV=5.00u
+ CJO=42.4p  M=0.333 N=0.775 TT=4.32u )


*SRC=S1JB;DI_S1JB;Diodes;Si;  600V  1.00A  3.00us   Diodes Inc. Rectifier
.MODEL DI_S1JB D  ( IS=7.31e-018 RS=42.0m BV=600 IBV=5.00u
+ CJO=42.4p  M=0.333 N=0.775 TT=4.32u )


*SRC=S1K;DI_S1K;Diodes;Si;  800V  1.00A  3.00us   Diodes Inc. Rectifier
.MODEL DI_S1K D  ( IS=7.31e-018 RS=42.0m BV=800 IBV=5.00u
+ CJO=42.4p  M=0.333 N=0.775 TT=4.32u )


*SRC=S1KB;DI_S1KB;Diodes;Si;  800V  1.00A  3.00us   Diodes Inc. Rectifier
.MODEL DI_S1KB D  ( IS=7.31e-018 RS=42.0m BV=800 IBV=5.00u
+ CJO=42.4p  M=0.333 N=0.775 TT=4.32u )


*SRC=S1M;DI_S1M;Diodes;Si;  1.00kV  1.00A  3.00us   Diodes Inc. Rectifier
.MODEL DI_S1M D  ( IS=7.31e-018 RS=42.0m BV=1.00k IBV=5.00u
+ CJO=42.4p  M=0.333 N=0.775 TT=4.32u )


*SRC=S1MB;DI_S1MB;Diodes;Si;  1.00kV  1.00A  3.00us   Diodes Inc. Rectifier
.MODEL DI_S1MB D  ( IS=7.31e-018 RS=42.0m BV=1.00k IBV=5.00u
+ CJO=42.4p  M=0.333 N=0.775 TT=4.32u )


*SRC=S2A;DI_S2A;Diodes;Si;  50.0V  1.50A  3.00us   Diodes Inc. 
.MODEL DI_S2A D  ( IS=1.30u RS=8.92m BV=50.0 IBV=5.00u
+ CJO=37.0p  M=0.333 N=2.58 TT=4.32u )


*SRC=S2B;DI_S2B;Diodes;Si;  100V  1.50A  3.00us   Diodes Inc. 
.MODEL DI_S2B D  ( IS=1.30u RS=8.92m BV=100 IBV=5.00u
+ CJO=37.0p  M=0.333 N=2.58 TT=4.32u )


*SRC=S2BA;DI_S2BA;Diodes;Si;  100V  1.50A  3.00us   Diodes Inc. 
.MODEL DI_S2BA D  ( IS=1.30u RS=8.92m BV=100 IBV=5.00u
+ CJO=37.0p  M=0.333 N=2.58 TT=4.32u )


*SRC=S2D;DI_S2D;Diodes;Si;  200V  1.50A  3.00us   Diodes Inc. 
.MODEL DI_S2D D  ( IS=1.30u RS=8.92m BV=200 IBV=5.00u
+ CJO=37.0p  M=0.333 N=2.58 TT=4.32u )


*SRC=S2DA;DI_S2DA;Diodes;Si;  200V  1.50A  3.00us   Diodes Inc. 
.MODEL DI_S2DA D  ( IS=1.30u RS=8.92m BV=200 IBV=5.00u
+ CJO=37.0p  M=0.333 N=2.58 TT=4.32u )


*SRC=S2K;DI_S2K;Diodes;Si;  800V  1.50A  3.00us   Diodes Inc. 
.MODEL DI_S2K D  ( IS=1.30u RS=8.92m BV=800 IBV=5.00u
+ CJO=37.0p  M=0.333 N=2.58 TT=4.32u )


*SRC=S3A;DI_S3A;Diodes;Si;  50.0V  3.00A  3.00us   Diodes Inc. -
.MODEL DI_S3A D  ( IS=1.37n RS=14.0m BV=50.0 IBV=10.0u
+ CJO=74.0p  M=0.333 N=1.70 TT=4.32u )


*SRC=S3BB;S3BB;Diodes;Si;  100V  3.00A  3.00us   Diodes Inc. -
.MODEL S3BB D  ( IS=1.37n RS=14.0m BV=100 IBV=10.0u
+ CJO=74.0p  M=0.333 N=1.70 TT=4.32u )


*SRC=S3DB;DI_S3DB;Diodes;Si;  200V  3.00A  3.00us   Diodes Inc. -
.MODEL DI_S3DB D  ( IS=1.37n RS=14.0m BV=200 IBV=10.0u
+ CJO=74.0p  M=0.333 N=1.70 TT=4.32u )


*SRC=S3GB;DI_S3GB;Diodes;Si;  400V  3.00A  3.00us   Diodes Inc. -
.MODEL DI_S3GB D  ( IS=1.37n RS=14.0m BV=400 IBV=10.0u
+ CJO=74.0p  M=0.333 N=1.70 TT=4.32u )


*SRC=S3K;DI_S3K;Diodes;Si;  800V  3.00A  3.00us   Diodes Inc. -
.MODEL DI_S3K D  ( IS=1.37n RS=14.0m BV=800 IBV=10.0u
+ CJO=74.0p  M=0.333 N=1.70 TT=4.32u )


*SRC=S3M;DI_S3M;Diodes;Si;  1.00kV  3.00A  3.00us   Diodes Inc. -
.MODEL DI_S3M D  ( IS=1.37n RS=14.0m BV=1.00k IBV=10.0u
+ CJO=74.0p  M=0.333 N=1.70 TT=4.32u )


*SRC=S5AC;DI_S5AC;Diodes;Si;  50.0V  5.00A  2.00us   Diodes Inc. -
.MODEL DI_S5AC D  ( IS=2.28n RS=8.40m BV=50.0 IBV=10.0u
+ CJO=74.0p  M=0.333 N=1.70 TT=2.88u )


*SRC=S5BC;DI_S5BC;Diodes;Si;  100V  5.00A  2.00us   Diodes Inc. -
.MODEL DI_S5BC D  ( IS=2.28n RS=8.40m BV=100 IBV=10.0u
+ CJO=74.0p  M=0.333 N=1.70 TT=2.88u )


*SRC=S5DC;DI_S5DC;Diodes;Si;  200V  5.00A  2.00us   Diodes Inc. -
.MODEL DI_S5DC D  ( IS=2.28n RS=8.40m BV=200 IBV=10.0u
+ CJO=74.0p  M=0.333 N=1.70 TT=2.88u )


*SRC=S5GC;DI_S5GC;Diodes;Si;  400V  5.00A  2.00us   Diodes Inc. 
.MODEL DI_S5GC D  ( IS=2.28n RS=8.40m BV=400 IBV=10.0u
+ CJO=74.0p  M=0.333 N=1.70 TT=2.88u )


*SRC=S5JC;DI_S5JC;Diodes;Si;  600V  5.00A  2.00us   Diodes Inc. -
.MODEL DI_S5JC D  ( IS=2.28n RS=8.40m BV=600 IBV=10.0u
+ CJO=74.0p  M=0.333 N=1.70 TT=2.88u )


*SRC=S5KC;DI_S5KC;Diodes;Si;  800V  5.00A  2.00us   Diodes Inc. -
.MODEL DI_S5KC D  ( IS=2.28n RS=8.40m BV=800 IBV=10.0u
+ CJO=74.0p  M=0.333 N=1.70 TT=2.88u )


*SRC=S5MC;DI_S5MC;Diodes;Si;  1.00kV  5.00A  2.00us   Diodes Inc. -
.MODEL DI_S5MC D  ( IS=2.28n RS=8.40m BV=1.00k IBV=10.0u
+ CJO=74.0p  M=0.333 N=1.70 TT=2.88u )


*SRC=S8KC;S8KC;Diodes;Si;  800V  8.00A  3.00us   Diodes Inc 
.MODEL S8KC D  ( IS=777n RS=8.87m BV=800 IBV=10.0u
+ CJO=74.0p  M=0.333 N=1.65 TT=4.32u )


*SRC=S8MC;S8MC;Diodes;Si;  1.00kV  8.00A  3.00us   Diodes Inc 
.MODEL S8MC D  ( IS=777n RS=8.87m BV=1.00k IBV=10.0u
+ CJO=74.0  M=0.333 N=1.65 TT=4.32u


*TITLE=PDR5K
*DATE=1/04/2015
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*VERSION=1


.MODEL PDR5K D(IS=1n RS=.006 BV=850 IBV=50u CJO=88p M=.4 VJ=.6 N=1.5 ISR=2n TRS1=0 XTI1=3 IKF=10 TT=2u EG=1.18)

*                (c)  2015 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*PD3R1600 Spice Model v1.0 Last Revised 04/02/2014  Diodes Inc SURFACE MOUNT STANDARD RECTIFIER

.MODEL DI_PD3R1600 D  ( IS=240.8p RS=22.56m BV=660 IBV=10
+ CJO=5.000n  M=528.1m N=1.620 TT=10.00n  EG=480m VJ=139.2m  )

*                (c)  2014 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan


*********************************************************************************************************************
*SRC=10A03;DI_10A03;Diodes;Si;  200V  10.0A  3.00us   Diodes Inc. 10A Rectifier
.MODEL DI_10A03 D  ( IS=844n RS=2.06m BV=200 IBV=10.0u
+ CJO=277p  M=0.333 N=2.06 TT=4.32u )
*********************************************************************************************************************


***************************************************************************************************************************************
*SRC=1N4001G;DI_1N4001G;Diodes;Si;  50.0V  1.00A  2.00us   Diodes Inc. Glass Passivated Rectifier
.MODEL DI_1N4001G D  ( IS=65.4p RS=42.2m BV=50.0 IBV=5.00u
+ CJO=14.8p  M=0.333 N=1.36 TT=2.88u )
***************************************************************************************************************************************


*SRC=1N4007;DI_1N4007;Diodes;Si;  1.00kV  1.00A  3.00us   Diodes, Inc. diode
.MODEL DI_1N4007 D  ( IS=76.9p RS=42.0m BV=1.00k IBV=5.00u
+ CJO=26.5p  M=0.333 N=1.45 TT=4.32u )


*SRC=6A10;DI_6A10;Diodes;Si;  1.00kV  6.00A  2.00us   Diodes Inc. 
.MODEL DI_6A10 D  ( IS=52.4n RS=7.00m BV=1.00k IBV=10.0u
+ CJO=60.0p  M=0.333 N=1.70 TT=2.88u )


*SRC=S2G;DI_S2G;Diodes;Si;  400V  1.50A  3.00us   Diodes Inc. 
.MODEL DI_S2G D  ( IS=1.30u RS=8.92m BV=400 IBV=5.00u
+ CJO=37.0p  M=0.333 N=2.58 TT=4.32u )


*SRC=S2J;DI_S2J;Diodes;Si;  600V  1.50A  3.00us   Diodes Inc. 
.MODEL DI_S2J D  ( IS=1.30u RS=8.92m BV=600 IBV=5.00u
+ CJO=37.0p  M=0.333 N=2.58 TT=4.32u )


*SRC=S2JA;DI_S2JA;Diodes;Si;  600V  1.50A  3.00us   Diodes Inc. 
.MODEL DI_S2JA D  ( IS=1.30u RS=8.92m BV=600 IBV=5.00u
+ CJO=37.0p  M=0.333 N=2.58 TT=4.32u )


*SRC=S2KA;DI_S2KA;Diodes;Si;  800V  1.50A  3.00us   Diodes Inc. 
.MODEL DI_S2KA D  ( IS=1.30u RS=8.92m BV=800 IBV=5.00u
+ CJO=37.0p  M=0.333 N=2.58 TT=4.32u )


*SRC=S2M;DI_S2M;Diodes;Si;  1.00kV  1.50A  3.00us   Diodes Inc. 
.MODEL DI_S2M D  ( IS=1.30u RS=8.92m BV=1.00k IBV=5.00u
+ CJO=37.0p  M=0.333 N=2.58 TT=4.32u )


*SRC=S2MA;DI_S2MA;Diodes;Si;  1.00kV  1.50A  3.00us   Diodes Inc. 
.MODEL DI_S2MA D  ( IS=1.30u RS=8.92m BV=1.00k IBV=5.00u
+ CJO=37.0p  M=0.333 N=2.58 TT=4.32u )


*SRC=S3D;DI_S3D;Diodes;Si;  200V  3.00A  3.00us   Diodes Inc. -
.MODEL DI_S3D D  ( IS=1.37n RS=14.0m BV=200 IBV=10.0u
+ CJO=74.0p  M=0.333 N=1.70 TT=4.32u )


*SRC=1N4002;DI_1N4002;Diodes;Si;  100V  1.00A  3.00us   Diodes, Inc. diode
.MODEL DI_1N4002 D  ( IS=76.9p RS=42.0m BV=100 IBV=5.00u
+ CJO=39.8p  M=0.333 N=1.45 TT=4.32u )


*SRC=1N4005;DI_1N4005;Diodes;Si;  600V  1.00A  3.00us   Diodes, Inc. diode
.MODEL DI_1N4005 D  ( IS=76.9p RS=42.0m BV=600 IBV=5.00u
+ CJO=26.5p  M=0.333 N=1.45 TT=4.32u )


*SRC=S2AA;DI_S2AA;Diodes;Si;  50.0V  1.50A  3.00us   Diodes Inc. 
.MODEL DI_S2AA D  ( IS=1.30u RS=8.92m BV=50.0 IBV=5.00u
+ CJO=37.0p  M=0.333 N=2.58 TT=4.32u )


*SRC=S2GA;DI_S2GA;Diodes;Si;  400V  1.50A  3.00us   Diodes Inc. 
.MODEL DI_S2GA D  ( IS=1.30u RS=8.92m BV=400 IBV=5.00u
+ CJO=37.0p  M=0.333 N=2.58 TT=4.32u )


*SRC=DFLR1200;DI_DFLR1200;Diodes;Si;  200V  1.00A  3.00us   Diodes Inc Standard Recovery Rectifier
.MODEL DI_DFLR1200 D  ( IS=5.90n RS=44.7m BV=200 IBV=3.00u
+ CJO=18.5p  M=0.333 N=1.88 TT=4.32u )


*SRC=DFLR1400;DI_DFLR1400;Diodes;Si;  400V  1.00A  3.00us   Diodes Inc Standard Recovery Rectifier
.MODEL DI_DFLR1400 D  ( IS=5.90n RS=44.7m BV=400 IBV=3.00u
+ CJO=18.5p  M=0.333 N=1.88 TT=4.32u )


*SRC=1N5711WS;DI_1N5711WS;Diodes;Si;  70.0V  15.0mA  1.00ns   Diodes Inc. 
.MODEL DI_1N5711WS D  ( IS=315n RS=2.80 BV=70.0 IBV=10.0u
+ CJO=2.00p  M=0.333 N=2.03 TT=1.44n )


*SRC=BAS40;DI_BAS40;Diodes;Si;  40.0V  0.200A  5.00ns   Diodes Inc. Schottky diode 
.MODEL DI_BAS40 D  ( IS=6.12u RS=0.120 BV=40.0 IBV=200n  
+ CJO=5.00p  M=0.333 N=2.61 TT=7.20n )


*
* This model account for one of the two diodes contained in the 
* BAS40-4 device. The other one is totally identical.
*
.LIB BAS40_04
*
.SUBCKT BAS40_04 A K
*
D1 A K BAS40_1
D2 A K1 BAS40_2
V1 K1 K DC 217e-3
*
.MODEL BAS40_1 D (
+LEVEL    = 1              IS       = 2.24014e-09    RS       = 7.23547        
+N        = 1.02505        IKF      = 0.255776                  
+CJO      = 3.0881e-12     VJ       = 119.67e-3      MJ       = 183.18e-3       
+FC       = 0.5            XTI      = 0.60541        EG       = 0.75453        
+TRS1     = 0.00733869     TRS2     = 1.45813e-05    IBV      = 0.01
+BV       = 40             TT       = 6.02e-9        )
*
.MODEL BAS40_2 D (
+LEVEL    = 1              IS       = 5.04958e-11    RS       = 0.00692754     
+N        = 1.10729        XTI      = 1.45276        EG       = 1.46766        
+TRS1     = 0.0021771      TRS2     = 0.000729073    IKF      = 0.0102054 
+IBV      = 0.01           BV       = 1e3            TT       = 0 )
*
.ENDS BAS40_04
*                                                                               
.ENDL BAS40_04


*SRC=BAS40-04T;DI_BAS40-04T;Diodes;Si;  40.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, dual, one node of two 
.MODEL DI_BAS40-04T D  ( IS=6.12u RS=0.120 BV=40.0 IBV=200n 
+ CJO=5.00p  M=0.333 N=2.61 TT=7.20n )


*SRC=BAS40-05;DI_BAS40-05;Diodes;Si;  40.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, dual, one node of two 
.MODEL DI_BAS40-05 D  ( IS=6.12u RS=0.120 BV=40.0 IBV=200n 
+ CJO=5.00p  M=0.333 N=2.61 TT=7.20n )


*SRC=BAS40-05T;DI_BAS40-05T;Diodes;Si;  40.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, dual, one node of two 
.MODEL DI_BAS40-05T D  ( IS=6.12u RS=0.120 BV=40.0 IBV=200n 
+ CJO=5.00p  M=0.333 N=2.61 TT=7.20n )


*SRC=BAS40-06T;DI_BAS40-06T;Diodes;Si;  40.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, dual, one node of two 
.MODEL DI_BAS40-06T D  ( IS=6.12u RS=0.120 BV=40.0 IBV=200n 
+ CJO=5.00p  M=0.333 N=2.61 TT=7.20n )


*SRC=BAS40BRW;DI_BAS40BRW;Diodes;Si;  40.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, Quad, one node of four
.MODEL DI_BAS40BRW D  ( IS=6.12u RS=0.120 BV=40.0 IBV=200n 
+ CJO=5.00p  M=0.333 N=2.61 TT=7.20n )


*SRC=BAS40DW-04;DI_BAS40DW-04;Diodes;Si;  40.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, Quad, one node of four
.MODEL DI_BAS40DW-04 D  ( IS=6.12u RS=0.120 BV=40.0 IBV=200n 
+ CJO=5.00p  M=0.333 N=2.61 TT=7.20n )


*SRC=BAS40DW-05;DI_BAS40DW-05;Diodes;Si;  40.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, Quad, one node of four
.MODEL DI_BAS40DW-05 D  ( IS=6.12u RS=0.120 BV=40.0 IBV=200n 
+ CJO=5.00p  M=0.333 N=2.61 TT=7.20n )


*SRC=BAS40DW-06;DI_BAS40DW-06;Diodes;Si;  40.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, Quad, one node of four
.MODEL DI_BAS40DW-06 D  ( IS=6.12u RS=0.120 BV=40.0 IBV=200n 
+ CJO=5.00p  M=0.333 N=2.61 TT=7.20n )


*SRC=BAS40LP;DI_BAS40LP;Diodes;Si;  40.0V  0.200A  5.00ns   Diodes Inc Schottky
.MODEL DI_BAS40LP D  ( IS=2.93u RS=1.29 BV=40.0 IBV=200n
+ CJO=2.30p  M=0.333 N=2.39 TT=7.20n )


*SRC=BAS40W;DI_BAS40W;Diodes;Si;  40.0V  0.200A  5.00ns   Diodes Inc. Schottky diode
.MODEL DI_BAS40W D  ( IS=6.12u RS=0.120 BV=40.0 IBV=200n 
+ CJO=5.00p  M=0.333 N=2.61 TT=7.20n )


*
*Zetex BAT54 Spice Model v1.0 Last Revised 25/04/00
*
.MODEL BAT54 D Is=649e-9 N=1.04 RS=2.09 IKF=20e-3
+XTI=2 EG=0.58 
+CJO=12.4e-12 M=0.381 VJ=0.391
+BV=50 IBV=100e-6 ISR=431e-9 NR=4.99
*
*$
*
*                (c)  2005 Zetex Semiconductors plc
*
*   The copyright in these models  and  the designs embodied belong
*   to Zetex Semiconductors plc (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Zetex PLC, its distributors
*   or agents.
*
*   Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*SRC=BAT54A;DI_BAT54A;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, dual, one node of two
.MODEL DI_BAT54A D  ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
+ CJO=13.3p  M=0.333 N=2.28 TT=7.20n )


*SRC=BAT54JW;DI_BAT54JW;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, dual, one node of two
.MODEL DI_BAT54JW D  ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
+ CJO=13.3p  M=0.333 N=2.28 TT=7.20n )


*BAT54LP Spice Model v1.0 Last Revised 08/04/2014  Diodes Inc SUPER BARRIER RECTIFIER
*SIMULATOR=SPICE3


.MODEL DI_BAT54LP D  ( IS=98.64n RS=1.080 BV=40.00 IBV=10.00
+ CJO=222.3p M=548.8m N=1.140 TT=10.00n EG=480.0m VJ=5.075m )

*                (c)  2014 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan


*SRC=BAT54LPS;DI_BAT54LPS;Diodes;Si;  30.0V  0.200A  2.00ns   Diodes Inc. SBR/ SKY
.MODEL DI_BAT54LPS D  ( IS=20.9n RS=0.895 BV=30.0 IBV=2.00u
+ CJO=10.6p  M=0.333 N=1.07 TT=2.88n )


*SRC=BAT54S;DI_BAT54S;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, dual, one node of two
.MODEL DI_BAT54S D  ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
+ CJO=13.3p  M=0.333 N=2.28 TT=7.20n )


*SRC=BAT54SDW;DI_BAT54SDW;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, quad, one node of four
.MODEL DI_BAT54SDW D  ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
+ CJO=13.3p  M=0.333 N=2.28 TT=7.20n )


*SRC=BAT54ST;DI_BAT54ST;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, dual, one node of two
.MODEL DI_BAT54ST D  ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
+ CJO=13.3p  M=0.333 N=2.28 TT=7.20n )


*SRC=BAT54SW;DI_BAT54SW;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, dual, one node of two
.MODEL DI_BAT54SW D  ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
+ CJO=13.3p  M=0.333 N=2.28 TT=7.20n )


*SRC=BAT54T;DI_BAT54T;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc. Schottky diode
.MODEL DI_BAT54T D  ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
+ CJO=13.3p  M=0.333 N=2.28 TT=7.20n )


*SRC=BAT54TW;DI_BAT54TW;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, tripple, one node of three
.MODEL DI_BAT54TW D  ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
+ CJO=13.3p  M=0.333 N=2.28 TT=7.20n )


*SRC=BAT54V;DI_BAT54V;Diodes;Si;  29.6V  0.200A  5.00ns   Diodes Inc. One Element of Dual Schottky Diodes
.MODEL DI_BAT54V D  ( IS=124n RS=0.210 BV=29.6 IBV=2.00
+ CJO=13.3  M=0.333 N=1.19 TT=7.20n )


*SRC=BAT54W;DI_BAT54W;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc. Schottky diode
.MODEL DI_BAT54W D  ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
+ CJO=13.3p  M=0.333 N=2.28 TT=7.20n )


*SRC=BAT54WS;DI_BAT54WS;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc. Schottky diode
.MODEL DI_BAT54WS D  ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
+ CJO=13.3p  M=0.333 N=2.28 TT=7.20n )


*SRC=PS3S0230;DI_PD3S0230;Diodes;Si;  30.0V  0.200A  2.00ns   Diodes INC Schottky Diode
.MODEL DI_PD3S0230 D  ( IS=400n RS=0.378 BV=30.0 IBV=2.00u
+ CJO=14.6p  M=0.333 N=1.31 TT=2.88n )


*******************************************************************************************************************************************
*SRC=QSBT40;DI_QSBT40;Diodes;Si;  30.0V  0.200A  50.0ns   Diodes Inc. Schottky Bus - Single Device of Multiple
.MODEL DI_QSBT40 D  ( IS=500n RS=0.211 BV=30.0 IBV=2.00u
+ CJO=10.0p  M=0.333 N=1.70 TT=72.0n )
*******************************************************************************************************************************************


*SRC=SD101AW;DI_SD101AW;Diodes;Si;  60.0V  15.0mA  1.00ns   Diodes Inc. Schottky 
.MODEL DI_SD101AW D  ( IS=1.82u RS=2.80 BV=60.0 IBV=200n 
+ CJO=2.65p  M=0.333 N=1.70 TT=1.44n )


*******************************************************************************************************************************************
*SRC=SD101AWS;DI_SD101AWS;Diodes;Si;  60.0V  15.0mA  1.00ns   Diodes Inc. Schottky- SD101AWS/BWS/CWS
.MODEL DI_SD101AWS D  ( IS=230n RS=2.13 BV=60.0 IBV=200n
+ CJO=2.00p  M=0.333 N=1.96 TT=1.44n )
*******************************************************************************************************************************************


*SRC=SD101BW;DI_SD101BW;Diodes;Si;  50.0V  15.0mA  1.00ns   Diodes Inc. Schottky 
.MODEL DI_SD101BW D  ( IS=1.82u RS=2.80 BV=50.0 IBV=200n 
+ CJO=2.65p  M=0.333 N=1.70 TT=1.44n )


*SRC=SD101BWS;DI_SD101BWS;Diodes;Si;  50.0V  15.0mA  1.00ns   Diodes Inc. Schottky 
.MODEL DI_SD101BWS D  ( IS=1.82u RS=2.80 BV=50.0 IBV=200n 
+ CJO=2.65p  M=0.333 N=1.70 TT=1.44n )


*SRC=SD101CW;DI_SD101CW;Diodes;Si;  40.0V  15.0mA  1.00ns   Diodes Inc. Schottky 
.MODEL DI_SD101CW D  ( IS=1.82u RS=2.80 BV=40.0 IBV=200n 
+ CJO=2.65p  M=0.333 N=1.70 TT=1.44n )


*SRC=SD101CWS;DI_SD101CWS;Diodes;Si;  40.0V  15.0mA  1.00ns   Diodes Inc. Schottky 
.MODEL DI_SD101CWS D  ( IS=1.82u RS=2.80 BV=40.0 IBV=200n 
+ CJO=2.65p  M=0.333 N=1.70 TT=1.44n )


*SRC=SD103ASDM;DI_SD103ASDM;Diodes;Si;  40.0V  0.350A  10.0ns   Diodes Inc. Schottky Barrier Diode, quad, one node of four
.MODEL DI_SD103ASDM D  ( IS=646n RS=0.120 BV=40.0 IBV=5.00u
+ CJO=29.2  M=0.333 N=1.28 TT=14.4n )


*SRC=SD103ATW;DI_SD103ATW;Diodes;Si;  40.0V  0.350A  10.0ns   Diodes Inc. Schottky Barrier Diode, tripple, one node of three
.MODEL DI_SD103ATW D  ( IS=646n RS=0.120 BV=40.0 IBV=5.00u
+ CJO=29.2  M=0.333 N=1.28 TT=14.4n )


*SRC=SD103AW;DI_SD103AW;Diodes;Si;  40.0V  0.350A  10.0ns   Diodes Inc. Schottky 
.MODEL DI_SD103AW D  ( IS=8.65u RS=0.120 BV=40.0 IBV=5.00u 
+ CJO=53.0p  M=0.333 N=1.70 TT=14.4n )


*SRC=SD103BW;DI_SD103BW;Diodes;Si;  30.0V  0.350A  10.0ns   Diodes Inc. Schottky 
.MODEL DI_SD103BW D  ( IS=8.65u RS=0.120 BV=30.0 IBV=5.00u 
+ CJO=53.0p  M=0.333 N=1.70 TT=14.4n )


*SRC=SD103BWS;DI_SD103BWS;Diodes;Si;  30.0V  0.350A  10.0ns   Diodes Inc. Schottky 
.MODEL DI_SD103BWS D  ( IS=8.65u RS=0.120 BV=30.0 IBV=5.00u 
+ CJO=53.0p  M=0.333 N=1.70 TT=14.4n )


*SRC=SD103CW;DI_SD103CW;Diodes;Si;  20.0V  0.350A  10.0ns   Diodes Inc. Schottky 
.MODEL DI_SD103CW D  ( IS=8.65u RS=0.120 BV=20.0 IBV=5.00u 
+ CJO=53.0p  M=0.333 N=1.70 TT=14.4n )


*SRC=SD103CWS;DI_SD103CWS;Diodes;Si;  20.0V  0.350A  10.0ns   Diodes Inc. Schottky 
.MODEL DI_SD103CWS D  ( IS=8.65u RS=0.120 BV=20.0 IBV=5.00u 
+ CJO=53.0p  M=0.333 N=1.70 TT=14.4n )


*SRC=SDM03MT40;DI_SDM03MT40;Diodes;Si;  40.0V  0.200A  5.00ns   Diodes Inc. Schottky 
.MODEL DI_SDM03MT40 D  ( IS=309u RS=0.210 BV=40.0 IBV=1.00u 
+ CJO=2.65p  M=0.333 N=6.81 TT=7.20n )


*SRC=SDM03U40;DI_SDM03U40;Diodes;Si;  30.0V  30.0mA  1.00ns   Diodes Inc.
Schottky
.MODEL DI_SDM03U40 D  ( IS=16.5u RS=2.20 BV=30.0 IBV=500n
+ CJO=2.59p  M=0.333 N=2.92 TT=1.44n )


*SRC=SDM10M45SD;DI_SDM10M45SD;Diodes;Si;  45.0V  0.100A  5.00ns   Diodes Inc. Schottky 
.MODEL DI_SDM10M45SD D  ( IS=290n RS=0.420 BV=45.0 IBV=1.00u 
+ CJO=10.6p  M=0.333 N=1.28 TT=7.20n )


*SRC=SDM10P45;DI_SDM10P45;Diodes;Si;  45.0V  0.100A  5.00ns   Diodes Inc. Schottky 
.MODEL DI_SDM10P45 D  ( IS=745n RS=0.792 BV=45.0 IBV=1.00u 
+ CJO=11.2p  M=0.333 N=1.39 TT=7.20n )


*SRC=SDM10U45;DI_SDM10U45;Diodes;Si;  45.0V  0.100A  2.00ns   Diodes Inc. SBR/ SKY
.MODEL DI_SDM10U45 D  ( IS=7.68u RS=1.32 BV=45.0 IBV=1.00u
+ CJO=13.3p  M=0.333 N=1.81 TT=2.88n )


*SRC=SDM10U45LP;DI_SDM10U45LP;Diodes;Si;  40.0V  0.300A  5.00ns   Diodes Inc. Schottky
.MODEL DI_SDM10U45LP D  ( IS=26.8u RS=0.140 BV=40.0 IBV=1.00u
+ CJO=10.6p  M=0.333 N=2.45 TT=7.20n )


*SRC=SDM20E40C;DI_SDM20E40C;Diodes;Si;  40.0V  0.400A  5.00ns   Diodes Inc. Schottky 
.MODEL DI_SDM20E40C D  ( IS=3.15u RS=0.165 BV=40.0 IBV=70.0u 
+ CJO=39.8p  M=0.333 N=1.16 TT=7.20n )


*SRC=SDM20N40A;DI_SDM20N40A;Diodes;Si;  40.0V  0.200A  5.00ns   Diodes, Inc. Dual Schottky, Model for Single Schottky Only
.MODEL DI_SDM20N40A D  ( IS=34.0p RS=0.211 BV=40.0 IBV=15.0u
+ CJO=50.0p  M=0.333 N=1.73 TT=7.20n


*SRC=SDM20U30;DI_SDM20U30;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc.
Schottky
.MODEL DI_SDM20U30 D  ( IS=59.4n RS=0.210 BV=30.0 IBV=150u
+ CJO=19.9p  M=0.333 N=0.700 TT=7.20n )


*SRC=SDM20U30LP;DI_SDM20U30LP;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc. Schottky
.MODEL DI_SDM20U30LP D  ( IS=59.4n RS=0.210 BV=30.0 IBV=150u
+ CJO=19.9p  M=0.333 N=0.700 TT=7.20n )


*SRC=SDM20U40;DI_SDM20U40;Diodes;Si;  40.0V  0.250A  10.0ns   Diodes Inc.
Schottky
.MODEL DI_SDM20U40 D  ( IS=4.32u RS=0.168 BV=40.0 IBV=5.00u
+ CJO=39.8p  M=0.333 N=1.70 TT=14.4n )


*SRC=SDM40E20LC;DI_SDM40E20LC;Diodes;Si;  20.0V  0.400A  10.0ns   Diodes INC Schottky Diode
.MODEL DI_SDM40E20LC D  ( IS=2.83m RS=23.0m BV=20.0 IBV=250u
+ CJO=66.3p  M=0.333 N=2.17 TT=14.4n


*SRC=SDMG0340L;DI_SDMG0340L;Diodes;Si;  40.0V  30.0mA  1.00ns   Diodes Inc. 
.MODEL DI_SBMG0340L D  ( IS=13.9u RS=2.57 BV=40.0 IBV=10.0u
+ CJO=2.65p  M=0.333 N=2.82 TT=1.44n )


*SRC=SDMG0340LA;DI_SDMG0340LA;Diodes;Si;  40.0V  30.0mA  1.00ns   Diodes Inc. Schottky diode, dual, one node of two 
.MODEL DI_SBMG0340LA D  ( IS=13.9u RS=2.57 BV=40.0 IBV=10.0u
+ CJO=2.65p  M=0.333 N=2.82 TT=1.44n )


*SRC=SDMG0340LC;DI_SDMG0340LC;Diodes;Si;  40.0V  30.0mA  1.00ns   Diodes Inc. Schottky diode, dual, one node of two 
.MODEL DI_SBMG0340LC D  ( IS=13.9u RS=2.57 BV=40.0 IBV=10.0u
+ CJO=2.65p  M=0.333 N=2.82 TT=1.44n )


*SRC=SDMG0340LS;DI_SDMG0340LS;Diodes;Si;  40.0V  30.0mA  1.00ns   Diodes Inc. Schottky diode, dual, one node of two 
.MODEL DI_SBMG0340LS D  ( IS=13.9u RS=2.57 BV=40.0 IBV=10.0u
+ CJO=2.65p  M=0.333 N=2.82 TT=1.44n )


*SRC=SDMK0340L;DI_SDMK0340L;Diodes;Si;  40.0V  30.0mA  3.00us   Diodes Inc. Schottky Barrier Diode
.MODEL DI_SDMK0340L D  ( IS=11.2u RS=3.64 BV=40.0 IBV=500n
+ CJO=2.65p  M=0.333 N=2.69 TT=4.32u )
******************************************************************************************************************************


*SRC=SDMP0340LAT;DI_SDMP0340LAT;Diodes;Si;  40.0V  30.0mA  5.00ns   Diodes Inc. Schottky diode, dual, one node of two 
.MODEL DI_SDMP0340LAT D  ( IS=16.5u RS=2.20 BV=40.0 IBV=1.00u 
+ CJO=2.65p  M=0.333 N=2.92 TT=7.20n )
**************************************************************************************************************************************************


*SRC=SDMP0340LCT;DI_SDMP0340LCT;Diodes;Si;  40.0V  30.0mA  5.00ns   Diodes Inc. Schottky diode, dual, one node of two 
.MODEL DI_SDMP0340LCT D  ( IS=16.5u RS=2.20 BV=40.0 IBV=1.00u 
+ CJO=2.65p  M=0.333 N=2.92 TT=7.20n )
**************************************************************************************************************************************************


*SRC=SDMP0340LST;DI_SDMP0340LST;Diodes;Si;  40.0V  30.0mA  5.00ns   Diodes Inc. Schottky diode, dual, one node of two 
.MODEL DI_SDMP0340LST D  ( IS=16.5u RS=2.20 BV=40.0 IBV=1.00u 
+ CJO=2.65p  M=0.333 N=2.92 TT=7.20n )
**************************************************************************************************************************************************


*SRC=SDMP0340LT;DI_SDMP0340LT;Diodes;Si;  40.0V  30.0mA  5.00ns   Diodes Inc. Schottky 
.MODEL DI_SDMP0340LT D  ( IS=16.5u RS=2.20 BV=40.0 IBV=1.00u 
+ CJO=2.65p  M=0.333 N=2.92 TT=7.20n )


*ZETEX ZHCS350 Spice Model v1.0 Last Revised 26/04/2005
    *
    .MODEL ZHCS350 D IS=1.35e-7 N=1.06 ISR=6e-7 NR=1.1 RS=0.9
    +IKF=0.2 BV=65 TRS1=6.5e-3 XTI=2 EG=0.63 Fc=0.5 CJO=18.84e-12
    +M=0.5 VJ=0.33 TT=1.6e-9 
    *
    *$
    *


*ZETEX ZHCS400 Spice Model v1.0 Last Revised 22/05/02
    *
    .MODEL ZHCS400 D IS=9.1e-8 N=.59 RS=250e-3 IKF=1.37e-3 XTI=2
    +EG=.58 CJO=101p M=.5231 VJ=.3905 Fc=.5 BV=60 IBV=100E-6
    +ISR=2.2E-6 NR=1.8 
    *
    *$
    *


*ZETEX ZLLS350 Spice Model v2.0 Last revision 24/05/2007
    *
    *This simple model has limitations with respect to temperature
    *best fit of forward characteristitics with temperature EG=0.63
    *best fit of reverse characteristitics with temperature EG=0.85
    *
    .MODEL ZLLS350 D IS=14E-8 N=1.03 ISR=9E-8 NR=2 IKF=0.043 BV=56 IBV=1E-4
    +RS=1.2 TT=1e-9 CJO=13.5E-12 VJ=0.6 M=0.33 EG=0.63 XTI=2 TRS1=4E-3
    *
    *$
    *


*SRC=BAS40T;DI_BAS40T;Diodes;Si;  40.0V  0.200A  5.00ns   Diodes Inc. Schottky diode 
.MODEL DI_BAS40T D  ( IS=6.12u RS=0.120 BV=40.0 IBV=200n 
+ CJO=5.00p  M=0.333 N=2.61 TT=7.20n )


*SRC=BAS40TW;DI_BAS40TW;Diodes;Si;  40.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, Tripple, one node of three
.MODEL DI_BAS40TW D  ( IS=6.12u RS=0.120 BV=40.0 IBV=200n 
+ CJO=5.00p  M=0.333 N=2.61 TT=7.20n )


*SRC=BAS40W-04;DI_BAS40W-04;Diodes;Si;  40.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, dual, one node of two
.MODEL DI_BAS40W-04 D  ( IS=6.12u RS=0.120 BV=40.0 IBV=200n 
+ CJO=5.00p  M=0.333 N=2.61 TT=7.20n )


*SRC=BAS40W-05;DI_BAS40W-05;Diodes;Si;  40.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, dual, one node of two
.MODEL DI_BAS40W-05 D  ( IS=6.12u RS=0.120 BV=40.0 IBV=200n 
+ CJO=5.00p  M=0.333 N=2.61 TT=7.20n )


*SRC=BAS40W-06;DI_BAS40W-06;Diodes;Si;  40.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, dual, one node of two
.MODEL DI_BAS40W-06 D  ( IS=6.12u RS=0.120 BV=40.0 IBV=200n 
+ CJO=5.00p  M=0.333 N=2.61 TT=7.20n )


*SRC=BAS70;DI_BAS70;Diodes;Si;  70.0V  70.0mA  5.00ns   Diodes Inc. -
.MODEL DI_BAS70 D  ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
+ CJO=2.00p  M=0.333 N=1.70 TT=7.20n )


*SRC=BAS70-04;DI_BAS70-04;Diodes;Si;  70.0V  70.0mA  5.00ns   Diodes Inc. Schottky diode, dual, one node of two
.MODEL DI_BAS70-04 D  ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
+ CJO=2.00p  M=0.333 N=1.70 TT=7.20n )


*SRC=BAS70-04T;DI_BAS70-04T;Diodes;Si;  70.0V  70.0mA  5.00ns   Diodes Inc. Schottky diode, dual, one node of two
.MODEL DI_BAS70-04T D  ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
+ CJO=2.00p  M=0.333 N=1.70 TT=7.20n )


*SRC=BAS70-05;DI_BAS70-05;Diodes;Si;  70.0V  70.0mA  5.00ns   Diodes Inc. Schottky diode, dual, one node of two
.MODEL DI_BAS70-05 D  ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
+ CJO=2.00p  M=0.333 N=1.70 TT=7.20n )


*SRC=BAS70-05T;DI_BAS70-05T;Diodes;Si;  70.0V  70.0mA  5.00ns   Diodes Inc. Schottky diode, dual, one node of two
.MODEL DI_BAS70-05T D  ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
+ CJO=2.00p  M=0.333 N=1.70 TT=7.20n )


*SRC=BAS70-06;DI_BAS70-06;Diodes;Si;  70.0V  70.0mA  5.00ns   Diodes Inc. Schottky diode, dual, one node of two
.MODEL DI_BAS70-06 D  ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
+ CJO=2.00p  M=0.333 N=1.70 TT=7.20n )


*SRC=BAS70-06T;DI_BAS70-06T;Diodes;Si;  70.0V  70.0mA  5.00ns   Diodes Inc. Schottky diode, dual, one node of two
.MODEL DI_BAS70-06T D  ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
+ CJO=2.00p  M=0.333 N=1.70 TT=7.20n )


*SRC=BAS70BRW;DI_BAS70BRW;Diodes;Si;  70.0V  70.0mA  5.00ns   Diodes Inc. Schottky diode, quad, one node of four
.MODEL DI_BAS70BRW D  ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
+ CJO=2.00p  M=0.333 N=1.70 TT=7.20n )


*SRC=BAS70DW-04;DI_BAS70DW-04;Diodes;Si;  70.0V  70.0mA  5.00ns   Diodes Inc. Schottky diode, quad, one node of four
.MODEL DI_BAS70DW-04 D  ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
+ CJO=2.00p  M=0.333 N=1.70 TT=7.20n )


*SRC=BAS70DW-05;DI_BAS70DW-05;Diodes;Si;  70.0V  70.0mA  5.00ns   Diodes Inc. Schottky diode, quad, one node of four
.MODEL DI_BAS70DW-05 D  ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
+ CJO=2.00p  M=0.333 N=1.70 TT=7.20n )


*SRC=BAS70DW-06;DI_BAS70DW-06;Diodes;Si;  70.0V  70.0mA  5.00ns   Diodes Inc. Schottky diode, quad, one node of four
.MODEL DI_BAS70DW-06 D  ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
+ CJO=2.00p  M=0.333 N=1.70 TT=7.20n )


*SRC=BAS70JW;DI_BAS70JW;Diodes;Si;  70.0V  70.0mA  5.00ns   Diodes Inc. Schottky diode, dual, one node of two
.MODEL DI_BAS70JW D  ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
+ CJO=2.00p  M=0.333 N=1.70 TT=7.20n )


*SRC=BAS70T;DI_BAS70T;Diodes;Si;  70.0V  70.0mA  5.00ns   Diodes Inc. Schottky diode
.MODEL DI_BAS70T D  ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
+ CJO=2.00p  M=0.333 N=1.70 TT=7.20n )


*SRC=BAS70TW;DI_BAS70TW;Diodes;Si;  70.0V  70.0mA  5.00ns   Diodes Inc. Schottky diode, tripple, one node of three
.MODEL DI_BAS70TW D  ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
+ CJO=2.00p  M=0.333 N=1.70 TT=7.20n )


*SRC=BAS70W;DI_BAS70W;Diodes;Si;  70.0V  70.0mA  5.00ns   Diodes Inc. Schottky diode
.MODEL DI_BAS70W D  ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
+ CJO=2.00p  M=0.333 N=1.70 TT=7.20n )


*SRC=BAS70W-04;DI_BAS70W-04;Diodes;Si;  70.0V  70.0mA  5.00ns   Diodes Inc. Schottky diode, dual, one node of two
.MODEL DI_BAS70W-04 D  ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
+ CJO=2.00p  M=0.333 N=1.70 TT=7.20n )


*SRC=BAS70W-05;DI_BAS70W-05;Diodes;Si;  70.0V  70.0mA  5.00ns   Diodes Inc. Schottky diode, dual, one node of two
.MODEL DI_BAS70W-05 D  ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
+ CJO=2.00p  M=0.333 N=1.70 TT=7.20n )


*SRC=BAS70W-06;DI_BAS70W-06;Diodes;Si;  70.0V  70.0mA  5.00ns   Diodes Inc. Schottky diode, dual, one node of two
.MODEL DI_BAS70W-06 D  ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
+ CJO=2.00p  M=0.333 N=1.70 TT=7.20n )


*SRC=BAT40V;DI_BAT40V;Diodes;Si;  40.0V  0.200A  5.00ns   Diodes Inc. Schottky
.MODEL DI_BAT40V D  ( IS=82.9n RS=0.373 BV=40.0 IBV=10.0u
+ CJO=11.9p  M=0.333 N=1.14 TT=7.20n )


*SRC=BAT40VC;DI_BAT40VC;Diodes;Si;  40.0V  0.200A  5.00ns   Diodes Inc. Schottky
.MODEL DI_BAT40VC D  ( IS=82.9n RS=0.373 BV=40.0 IBV=10.0u
+ CJO=11.9p  M=0.333 N=1.14 TT=7.20n )


*SRC=BAT42W;DI_BAT42W;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc Schottky Diode
.MODEL DI_BAT42W D  ( IS=87.5u RS=18.1m BV=30.0 IBV=500n
+ CJO=8.88p  M=0.333 N=3.51 TT=7.20n )


*SRC=BAT42WS;DI_BAT42WS;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc
Schottky Diode
.MODEL DI_BAT42WS D  ( IS=87.5u RS=18.1m BV=30.0 IBV=500n
+ CJO=8.88p  M=0.333 N=3.51 TT=7.20n )


*SRC=1N6263W;DI_1N6263W;Diodes;Si;  60.0V  15.0mA  1.00ns   Diodes Inc. Schottky 
.MODEL DI_1N6263W D  ( IS=1.82u RS=2.80 BV=60.0 IBV=200n 
+ CJO=2.65p  M=0.333 N=1.70 TT=1.44n )


*SRC=BAT43W;DI_BAT43W;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc Schottky Diode 
.MODEL DI_BAT43W D  ( IS=87.5u RS=18.1m BV=30.0 IBV=500n 
+ CJO=8.88p  M=0.333 N=3.51 TT=7.20n )


*SRC=BAT43WS;DI_BAT43WS;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc Schottky Diode 
.MODEL DI_BAT43WS D  ( IS=87.5u RS=18.1m BV=30.0 IBV=500n 
+ CJO=8.88p  M=0.333 N=3.51 TT=7.20n )


*SRC=BAT46W;DI_BAT46W;Diodes;Si;  100V  0.150A  5.00ns   Diodes Inc. Schottky 
.MODEL DI_BAT46W D  ( IS=603n RS=0.280 BV=100 IBV=5.00u 
+ CJO=7.96p  M=0.333 N=1.70 TT=7.20n )


*ZETEX BAT54 Spice Model v1.0 Last Revised 25/04/00
    *
    .MODEL BAT54 D Is=649e-9 N=1.04 RS=2.09 IKF=20e-3
    +XTI=2 EG=0.58 
    +CJO=12.4e-12 M=0.381 VJ=0.391
    +BV=50 IBV=100e-6 ISR=431e-9 NR=4.99
    *
    *$
    *


*SRC=BAT54ADW;DI_BAT54ADW;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, quad, one node of four
.MODEL DI_BAT54ADW D  ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
+ CJO=13.3p  M=0.333 N=2.28 TT=7.20n )


*SRC=BAT54AT;DI_BAT54AT;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, dual, one node of two
.MODEL DI_BAT54AT D  ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
+ CJO=13.3p  M=0.333 N=2.28 TT=7.20n )


*SRC=BAT54AW;DI_BAT54AW;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, dual, one node of two
.MODEL DI_BAT54AW D  ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
+ CJO=13.3p  M=0.333 N=2.28 TT=7.20n )


*SRC=BAT54BRW;DI_BAT54BRW;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, quad, one node of four
.MODEL DI_BAT54BRW D  ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
+ CJO=13.3p  M=0.333 N=2.28 TT=7.20n )


*SRC=BAT54C;DI_BAT54C;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, dual, one node of two
.MODEL DI_BAT54C D  ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
+ CJO=13.3p  M=0.333 N=2.28 TT=7.20n )


*SRC=BAT54CDW;DI_BAT54CDW;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, quad, one node of four
.MODEL DI_BAT54CDW D  ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
+ CJO=13.3p  M=0.333 N=2.28 TT=7.20n )


*SRC=BAT54CT;DI_BAT54CT;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, dual, one node of two
.MODEL DI_BAT54CT D  ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
+ CJO=13.3p  M=0.333 N=2.28 TT=7.20n )


*SRC=BAT54CW;DI_BAT54CW;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, dual, one node of two
.MODEL DI_BAT54CW D  ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
+ CJO=13.3p  M=0.333 N=2.28 TT=7.20n )


*******************************************************************************************************************************************
*SRC=BAT54DW;DI_BAT54DW;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc. Schottky, dual, one of two nodes
.MODEL DI_BAT54DW D  ( IS=235n RS=0.210 BV=30.0 IBV=2.00u
+ CJO=13.3p  M=0.333 N=1.28 TT=7.20n )
*******************************************************************************************************************************************


*ZETEX ZLLS2000 Spice Model v2.0 Last revision 25/05/2007
    *
    *This simple model has limitations with respect to temperature
    *for best fit of forward characteristitics with temperature EG=0.63
    *for best fit of reverse characteristitics with temperature EG=0.85
    *
    .MODEL ZLLS2000 D IS=2.7e-6 N=1.03 ISR=4.5E-6 NR=2 IKF=1.3 BV=56 IBV=1E-3
    +RS=0.07 TT=6e-9 CJO=265e-12 VJ=0.6 M=0.34 EG=0.63 XTI=2 TRS1=4e-3
    *
    *$
    *


*ZETEX ZLLS400 Spice Model v2.0 Last revision 24/05/2007
    *
    *This simple model has limitations with respect to temperature
    *best fit of forward characteristitics with temperature EG=0.63
    *best fit of reverse characteristitics with temperature EG=0.85
    *
    .MODEL ZLLS400 D IS=6.1e-7 N=1.03 ISR=1.4E-6 NR=2 IKF=0.32 BV=42 IBV=2E-4
    +RS=0.27 TT=3e-9 CJO=71e-12 VJ=0.6 M=0.36 EG=0.63 XTI=2 TRS1=4e-3
    *
    *$
    *


*ZETEX ZLLS500 Spice Model v2.0 Last revision 24/05/2007
    *
    *This simple model has limitations with respect to temperature
    *best fit of forward characteristitics with temperature EG=0.63
    *best fit of reverse characteristitics with temperature EG=0.85
    *
    .MODEL ZLLS500 D IS=6.1e-7 N=1.03 ISR=1.4E-6 NR=2 IKF=0.32 BV=42 IBV=2E-4
    +RS=0.27 TT=3e-9 CJO=71e-12 VJ=0.6 M=0.36 EG=0.63 XTI=2 TRS1=4e-3
    *
    *$
    *


*SRC=BAS40-06;DI_BAS40-06;Diodes;Si;  40.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, dual, one node of two 
.MODEL DI_BAS40-06 D  ( IS=6.12u RS=0.120 BV=40.0 IBV=200n 
+ CJO=5.00p  M=0.333 N=2.61 TT=7.20n )


*TITLE=SDM02U30LP3
*DATE=30/08/2016
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*VERSION=1

.MODEL SDM02U30LP3 D(IS=.22u RS=2.2 BV=33 IBV=110u CJO=6p M=.33 VJ=.4 N=1 ISR=1u IKF=100m TRS1=5m XTI1=3 TT=30n EG=.54 NBV=2)

*                (c)  2016 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*SDM02U30CSP Spice Model v1.0 Last Revised 8/31/2016  Diodes Inc SUPER BARRIER RECTIFIER
 SIMULATOR=SPICE3
.MODEL DI_SDM02U30CSP D  ( IS=276.7n RS=424.6p BV=50.00 IBV=10.00
+ CJO=261.8p M=526.0m N=625.2p TT=1.627n EG=480.0m VJ=8.630m )

*                (c)  2016 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan


*SDM02M30LP3 Spice Model v1.0 Last Revised 8/31/2016  Diodes Inc SUPER BARRIER RECTIFIER
 SIMULATOR=SPICE3
.MODEL DI_SDM02M30LP3 D  ( IS=25.07n RS=444.1p BV=50.00 IBV=10.00
+ CJO=45.92p M=357.3m N=285.5 TT=10.00n EG=480.0m VJ=1.309m )

*                (c)  2016 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan


*SRC=SDM40E20LS;DI_SDM40E20LS;Diodes;Si;  20.0V  0.400A  5.00ns   Diodes Inc. Schottky 
.MODEL DI_SDM40E20LS D  ( IS=54.8u RS=0.132 BV=20.0 IBV=250u 
+ CJO=199p  M=0.333 N=1.34 TT=7.20n )


*SRC=DF005M;DI_DF005M;Diodes;Si;  50.0V  1.00A  3.00us   Diodes Inc. Bridge -- for one element 
.MODEL DI_DF005M D  ( IS=4.42n RS=42.0m BV=50.0 IBV=10.0u 
+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )


*SRC=DF005S;DI_DF005S;Diodes;Si;  50.0V  1.00A  3.00us   Diodes Inc. Bridge -- for one element 
.MODEL DI_DF005S D  ( IS=4.42n RS=42.0m BV=50.0 IBV=10.0u 
+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )


*SRC=DF01M;DI_DF01M;Diodes;Si;  100V  1.00A  3.00us   Diodes Inc. Bridge -- for one element 
.MODEL DI_DF01M D  ( IS=4.42n RS=42.0m BV=100 IBV=10.0u 
+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )


*SRC=DF01S;DI_DF01S;Diodes;Si;  100V  1.00A  3.00us   Diodes Inc. Bridge -- for one element 
.MODEL DI_DF01S D  ( IS=4.42n RS=42.0m BV=100 IBV=10.0u 
+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )


*SRC=DF02M;DI_DF02M;Diodes;Si;  200V  1.00A  3.00us   Diodes Inc. Bridge -- for one element 
.MODEL DI_DF02M D  ( IS=4.42n RS=42.0m BV=200 IBV=10.0u 
+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )


*SRC=DF02S;DI_DF02S;Diodes;Si;  200V  1.00A  3.00us   Diodes Inc. Bridge -- for one element 
.MODEL DI_DF02S D  ( IS=4.42n RS=42.0m BV=200 IBV=10.0u 
+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )


*SRC=DF04M;DI_DF04M;Diodes;Si;  400V  1.00A  3.00us   Diodes Inc. Bridge -- for one element 
.MODEL DI_DF04M D  ( IS=4.42n RS=42.0m BV=400 IBV=10.0u 
+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )


*SRC=DF04S;DI_DF04S;Diodes;Si;  400V  1.00A  3.00us   Diodes Inc. Bridge -- for one element 
.MODEL DI_DF04S D  ( IS=4.42n RS=42.0m BV=400 IBV=10.0u 
+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )


*SRC=DF06M;DI_DF06M;Diodes;Si;  600V  1.00A  3.00us   Diodes Inc. Bridge -- for one element 
.MODEL DI_DF06M D  ( IS=4.42n RS=42.0m BV=600 IBV=10.0u 
+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )


*SRC=DF06S;DI_DF06S;Diodes;Si;  600V  1.00A  3.00us   Diodes Inc. Bridge -- for one element 
.MODEL DI_DF06S D  ( IS=4.42n RS=42.0m BV=600 IBV=10.0u 
+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )


*SRC=DF08M;DI_DF08M;Diodes;Si;  800V  1.00A  3.00us   Diodes Inc. Bridge -- for one element 
.MODEL DI_DF08M D  ( IS=4.42n RS=42.0m BV=800 IBV=10.0u 
+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )


*SRC=DF08S;DI_DF08S;Diodes;Si;  800V  1.00A  3.00us   Diodes Inc. Bridge -- for one element 
.MODEL DI_DF08S D  ( IS=4.42n RS=42.0m BV=800 IBV=10.0u 
+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )


*SRC=DF10M;DI_DF10M;Diodes;Si;  1.00kV  1.00A  3.00us   Diodes Inc. Bridge -- for one element 
.MODEL DI_DF10M D  ( IS=4.42n RS=42.0m BV=1.00k IBV=10.0u 
+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )


*SRC=DF10S;DI_DF10S;Diodes;Si;  1.00kV  1.00A  3.00us   Diodes Inc. Bridge -- for one element 
.MODEL DI_DF10S D  ( IS=4.42n RS=42.0m BV=1.00k IBV=10.0u 
+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )


*SRC=DF15005S;DI_DF15005S;Diodes;Si;  50.0V  1.50A  3.00us   Diodes Inc. Bridge -- for one element
.MODEL DI_DF15005S D  ( IS=2.06n RS=28.1m BV=50.0 IBV=10.0u
+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )


*SRC=DF1501S;DI_DF1501S;Diodes;Si;  100V  1.50A  3.00us   Diodes Inc. Bridge -- for one element
.MODEL DI_DF1501S D  ( IS=2.06n RS=28.1m BV=100 IBV=10.0u
+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )


*SRC=DF1502S;DI_DF1502S;Diodes;Si;  200V  1.50A  3.00us   Diodes Inc. Bridge -- for one element
.MODEL DI_DF1502S D  ( IS=2.06n RS=28.1m BV=200 IBV=10.0u
+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )


*SRC=DF1504S;DI_DF1504S;Diodes;Si;  400V  1.50A  3.00us   Diodes Inc. Bridge -- for one element
.MODEL DI_DF1504S D  ( IS=2.06n RS=28.1m BV=400 IBV=10.0u
+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )


*SRC=DF1506S;DI_DF1506S;Diodes;Si;  600V  1.50A  3.00us   Diodes Inc. Bridge -- for one element
.MODEL DI_DF1506S D  ( IS=2.06n RS=28.1m BV=600 IBV=10.0u
+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )


*SRC=DF1508S;DI_DF1508S;Diodes;Si;  800V  1.50A  3.00us   Diodes Inc. Bridge -- for one element
.MODEL DI_DF1508S D  ( IS=2.06n RS=28.1m BV=800 IBV=10.0u
+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )


*SRC=DF1510S;DI_DF1510S;Diodes;Si;  1.00kV  1.50A  3.00us   Diodes Inc. Bridge -- for one element
.MODEL DI_DF1510S D  ( IS=2.06n RS=28.1m BV=1.00k IBV=10.0u
+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )


*SRC=GBJ15005;DI_GBJ15005;Diodes;Si;  50.0V  15.0A  3.00us   Diodes Inc.
Bridge Rectifier -- for one element
.MODEL DI_GBJ15005 D  ( IS=5.11u RS=3.43m BV=50.0 IBV=10.0u
+ CJO=106p  M=0.333 N=2.44 TT=4.32u )


*SRC=GBJ1501;DI_GBJ1501;Diodes;Si;  100V  15.0A  3.00us   Diodes Inc.
Bridge Rectifier -- for one element
.MODEL DI_GBJ1501 D  ( IS=5.11u RS=3.43m BV=100 IBV=10.0u
+ CJO=106p  M=0.333 N=2.44 TT=4.32u )


*SRC=GBJ1502;DI_GBJ1502;Diodes;Si;  200V  15.0A  3.00us   Diodes Inc.
Bridge Rectifier -- for one element
.MODEL DI_GBJ1502 D  ( IS=5.11u RS=3.43m BV=200 IBV=10.0u
+ CJO=106p  M=0.333 N=2.44 TT=4.32u )


*SRC=GBJ1504;DI_GBJ1504;Diodes;Si;  400V  15.0A  3.00us   Diodes Inc.
Bridge Rectifier -- for one element
.MODEL DI_GBJ1504 D  ( IS=5.11u RS=3.43m BV=400 IBV=10.0u
+ CJO=106p  M=0.333 N=2.44 TT=4.32u )


*SRC=GBJ1506;DI_GBJ1506;Diodes;Si;  600V  15.0A  3.00us   Diodes Inc.
Bridge Rectifier -- for one element
.MODEL DI_GBJ1506 D  ( IS=5.11u RS=3.43m BV=600 IBV=10.0u
+ CJO=106p  M=0.333 N=2.44 TT=4.32u )


*SRC=GBJ1508;DI_GBJ1508;Diodes;Si;  800V  15.0A  3.00us   Diodes Inc.
Bridge Rectifier -- for one element
.MODEL DI_GBJ1508 D  ( IS=5.11u RS=3.43m BV=800 IBV=10.0u
+ CJO=106p  M=0.333 N=2.44 TT=4.32u )


*SRC=GBJ1510;DI_GBJ1510;Diodes;Si;  1.00kV  15.0A  3.00us   Diodes Inc.
Bridge Rectifier -- for one element
.MODEL DI_GBJ1510 D  ( IS=5.11u RS=3.43m BV=1.00k IBV=10.0u
+ CJO=106p  M=0.333 N=2.44 TT=4.32u )


*SRC=GBJ20005;DI_GBJ20005;Diodes;Si;  50.0V  20.0A  3.00us   Diodes Inc.
Bridge Rect. This model covers only one element.  There are four elements per pkg. .MODEL DI_GBJ20005 D  ( IS=15.1u RS=2.96m BV=50.0 IBV=10.0u
+ CJO=111p  M=0.333 N=2.84 TT=4.32u )


*SRC=GBJ2001;DI_GBJ2001;Diodes;Si;  100V  20.0A  3.00us   Diodes Inc.
Bridge Rect. This model covers only one element.  There are four elements per pkg. .MODEL DI_GBJ2001 D  ( IS=15.1u RS=2.96m BV=100 IBV=10.0u
+ CJO=111p  M=0.333 N=2.84 TT=4.32u )


*SRC=GBJ2002;DI_GBJ2002;Diodes;Si;  200V  20.0A  3.00us   Diodes Inc.
Bridge Rect. This model covers only one element.  There are four elements per pkg. .MODEL DI_GBJ2002 D  ( IS=15.1u RS=2.96m BV=200 IBV=10.0u
+ CJO=111p  M=0.333 N=2.84 TT=4.32u )


*SRC=GBJ2004;DI_GBJ2004;Diodes;Si;  400V  20.0A  3.00us   Diodes Inc.
Bridge Rect. This model covers only one element.  There are four elements per pkg. .MODEL DI_GBJ2004 D  ( IS=15.1u RS=2.96m BV=400 IBV=10.0u
+ CJO=111p  M=0.333 N=2.84 TT=4.32u )


*SRC=GBJ2006;DI_GBJ2006;Diodes;Si;  600V  20.0A  3.00us   Diodes Inc.
Bridge Rect. This model covers only one element.  There are four elements per pkg. .MODEL DI_GBJ2006 D  ( IS=15.1u RS=2.96m BV=600 IBV=10.0u
+ CJO=111p  M=0.333 N=2.84 TT=4.32u )


*SRC=GBJ2008;DI_GBJ2008;Diodes;Si;  800V  20.0A  3.00us   Diodes Inc.
Bridge Rect. This model covers only one element.  There are four elements per pkg. .MODEL DI_GBJ2008 D  ( IS=15.1u RS=2.96m BV=800 IBV=10.0u
+ CJO=111p  M=0.333 N=2.84 TT=4.32u )


*SRC=GBJ2010;DI_GBJ2010;Diodes;Si;  1.00kV  20.0A  3.00us   Diodes Inc.
Bridge Rect. This model covers only one element.  There are four elements per pkg. .MODEL DI_GBJ2010 D  ( IS=15.1u RS=2.96m BV=1.00k IBV=10.0u
+ CJO=111p  M=0.333 N=2.84 TT=4.32u )


*SRC=GBJ2510;DI_GBJ2510;Diodes;Si;  1.00kV  25.0A  3.00us   Diodes Inc. Bridge Rectifier--Per Element
.MODEL DI_GBJ2510 D  ( IS=379n RS=2.84m BV=1.00k IBV=10.0u
+ CJO=146p  M=0.333 N=2.07 TT=4.32u )


*SRC=GBU1002;DI_GBU1002;Diodes;Si;  200V  10.0A  3.00us   Diodes Inc.
Bridge Rectifier -- Per Element
.MODEL DI_GBU1002 D  ( IS=1.71f RS=7.00m BV=200 IBV=5.00u
+ CJO=133p  M=0.333 N=0.900 TT=4.32u )


*SRC=GBU4005;DI_GBU4005;Diodes;Si;  50.0V  4.00A  3.00us   Diodes Inc. Bridge -- for one element
.MODEL DI_GBU4005 D  ( IS=23.3n RS=7.20m BV=50.0 IBV=5.00u
+ CJO=148p  M=0.333 N=1.80 TT=4.32u )


*SRC=GBU401;DI_GBU401;Diodes;Si;  100V  4.00A  3.00us   Diodes Inc. Bridge -- for one element
.MODEL DI_GBU401 D  ( IS=23.3n RS=7.20m BV=100 IBV=5.00u
+ CJO=148p  M=0.333 N=1.80 TT=4.32u )


*SRC=GBU402;DI_GBU402;Diodes;Si;  200V  4.00A  3.00us   Diodes Inc. Bridge -- for one element
.MODEL DI_GBU402 D  ( IS=23.3n RS=7.20m BV=200 IBV=5.00u
+ CJO=148p  M=0.333 N=1.80 TT=4.32u )


*SRC=GBU404;DI_GBU404;Diodes;Si;  400V  4.00A  3.00us   Diodes Inc. Bridge -- for one element
.MODEL DI_GBU404 D  ( IS=23.3n RS=7.20m BV=400 IBV=5.00u
+ CJO=148p  M=0.333 N=1.80 TT=4.32u )


*SRC=GBU406;DI_GBU406;Diodes;Si;  600V  4.00A  3.00us   Diodes Inc. Bridge -- for one element
.MODEL DI_GBU406 D  ( IS=23.3n RS=7.20m BV=600 IBV=5.00u
+ CJO=148p  M=0.333 N=1.80 TT=4.32u )


*SRC=GBU408;DI_GBU408;Diodes;Si;  800V  4.00A  3.00us   Diodes Inc. Bridge -- for one element
.MODEL DI_GBU408 D  ( IS=23.3n RS=7.20m BV=800 IBV=5.00u
+ CJO=148p  M=0.333 N=1.80 TT=4.32u )


*SRC=GBU410;DI_GBU410;Diodes;Si;  1.00kV  4.00A  3.00us   Diodes Inc. Bridge -- for one element
.MODEL DI_GBU410 D  ( IS=23.3n RS=7.20m BV=1.00k IBV=5.00u
+ CJO=148p  M=0.333 N=1.80 TT=4.32u )


*SRC=GBU8005;DI_GBU8005;Diodes;Si;  50.0V  8.00A  3.00us   Diodes Inc. Bridge -- for one element
.MODEL DI_GBU8005 D  ( IS=17.8p RS=7.59m BV=50.0 IBV=5.00u
+ CJO=240p  M=0.333 N=1.25 TT=4.32u )


*SRC=GBU801;DI_GBU801;Diodes;Si;  100V  8.00A  3.00us   Diodes Inc. Bridge -- for one element
.MODEL DI_GBU801 D  ( IS=17.8p RS=7.59m BV=100 IBV=5.00u
+ CJO=240p  M=0.333 N=1.25 TT=4.32u )


*SRC=GBU802;DI_GBU802;Diodes;Si;  200V  8.00A  3.00us   Diodes Inc. Bridge -- for one element
.MODEL DI_GBU802 D  ( IS=17.8p RS=7.59m BV=200 IBV=5.00u
+ CJO=240p  M=0.333 N=1.25 TT=4.32u )


*SRC=GBU804;DI_GBU804;Diodes;Si;  400V  8.00A  3.00us   Diodes Inc. Bridge -- for one element
.MODEL DI_GBU804 D  ( IS=17.8p RS=7.59m BV=400 IBV=5.00u
+ CJO=240p  M=0.333 N=1.25 TT=4.32u )


*SRC=GBU806;DI_GBU806;Diodes;Si;  600V  8.00A  3.00us   Diodes Inc. Bridge -- for one element
.MODEL DI_GBU806 D  ( IS=17.8p RS=7.59m BV=600 IBV=5.00u
+ CJO=240p  M=0.333 N=1.25 TT=4.32u )


*SRC=GBU808;DI_GBU808;Diodes;Si;  800V  8.00A  3.00us   Diodes Inc. Bridge -- for one element
.MODEL DI_GBU808 D  ( IS=17.8p RS=7.59m BV=800 IBV=5.00u
+ CJO=240p  M=0.333 N=1.25 TT=4.32u )


*SRC=GBU810;DI_GBU810;Diodes;Si;  1.00kV  8.00A  3.00us   Diodes Inc. Bridge -- for one element
.MODEL DI_GBU810 D  ( IS=17.8p RS=7.59m BV=1.00k IBV=5.00u
+ CJO=240p  M=0.333 N=1.25 TT=4.32u )


*SRC=HD01;DI_HD01;Diodes;Si;  100V  0.800A  3.00us   Diodes Inc. Bridge
Rectifier -- for one element

.MODEL DI_HD01 D  ( IS=3.47n RS=42.6m BV=100 IBV=5.00u

+ CJO=25.2p  M=0.333 N=1.70 TT=4.32u )


*SRC=HD02;DI_HD02;Diodes;Si;  200V  0.800A  3.00us   Diodes Inc. Bridge
Rectifier -- for one element

.MODEL DI_HD02 D  ( IS=3.47n RS=42.6m BV=200 IBV=5.00u

+ CJO=25.2p  M=0.333 N=1.70 TT=4.32u )


*SRC=HD04;DI_HD04;Diodes;Si;  400V  0.800A  3.00us   Diodes Inc. Bridge
Rectifier -- for one element

.MODEL DI_HD04 D  ( IS=3.47n RS=42.6m BV=400 IBV=5.00u

+ CJO=25.2p  M=0.333 N=1.70 TT=4.32u )


*SRC=HD06;DI_HD06;Diodes;Si;  600V  0.800A  3.00us   Diodes Inc. Bridge
Rectifier -- for one element

.MODEL DI_HD06 D  ( IS=3.47n RS=42.6m BV=600 IBV=5.00u

+ CJO=25.2p  M=0.333 N=1.70 TT=4.32u )


*SRC=KBJ4005G;DI_KBJ4005G;Diodes;Si;  50.0V  4.00A  3.00us   Diodes Inc. Bridge Rectifier - Per Diode
.MODEL DI_KBJ4005G D  ( IS=656n RS=10.5m BV=50.0 IBV=10.0u
+ CJO=79.6p  M=0.333 N=2.45 TT=4.32u )


*SRC=KBJ401G;DI_KBJ401G;Diodes;Si;  100V  4.00A  3.00us   Diodes Inc. Bridge Rectifier - Per Diode
.MODEL DI_KBJ401G D  ( IS=656n RS=10.5m BV=100 IBV=10.0u
+ CJO=79.6p  M=0.333 N=2.45 TT=4.32u )


*SRC=KBJ402G;DI_KBJ402G;Diodes;Si;  200V  4.00A  3.00us   Diodes Inc. Bridge Rectifier - Per Diode
.MODEL DI_KBJ402G D  ( IS=656n RS=10.5m BV=200 IBV=10.0u
+ CJO=79.6p  M=0.333 N=2.45 TT=4.32u )


*SRC=KBJ404G;DI_KBJ404G;Diodes;Si;  400V  4.00A  3.00us   Diodes Inc. Bridge Rectifier - Per Diode
.MODEL DI_KBJ404G D  ( IS=656n RS=10.5m BV=400 IBV=10.0u
+ CJO=79.6p  M=0.333 N=2.45 TT=4.32u )


*SRC=KBJ406G;DI_KBJ406G;Diodes;Si;  600V  4.00A  3.00us   Diodes Inc. Bridge Rectifier - Per Diode
.MODEL DI_KBJ406G D  ( IS=656n RS=10.5m BV=600 IBV=10.0u
+ CJO=79.6p  M=0.333 N=2.45 TT=4.32u )


*SRC=KBJ408G;DI_KBJ408G;Diodes;Si;  800V  4.00A  3.00us   Diodes Inc. Bridge Rectifier - Per Diode
.MODEL DI_KBJ408G D  ( IS=656n RS=10.5m BV=800 IBV=10.0u
+ CJO=79.6p  M=0.333 N=2.45 TT=4.32u )


*SRC=KBJ410G;DI_KBJ410G;Diodes;Si;  1.00kV  4.00A  3.00us   Diodes Inc. Bridge Rectifier - Per Diode
.MODEL DI_KBJ410G D  ( IS=656n RS=10.5m BV=1.00k IBV=10.0u
+ CJO=79.6p  M=0.333 N=2.45 TT=4.32u )


*SRC=KBP01G;DI_KBP01G;Diodes;Si;  100V  1.50A  3.00us   Diodes Inc. Bridge -- for one element
.MODEL DI_KBP01G D  ( IS=39.2u RS=28.1m BV=100 IBV=5.00u
+ CJO=26.5p  M=0.333 N=4.38 TT=4.32u )


*SRC=KBP02G;DI_KBP02G;Diodes;Si;  200V  1.50A  3.00us   Diodes Inc. Bridge -- for one element
.MODEL DI_KBP02G D  ( IS=39.2u RS=28.1m BV=200 IBV=5.00u
+ CJO=26.5p  M=0.333 N=4.38 TT=4.32u )


*SRC=KBP04G;DI_KBP04G;Diodes;Si;  400V  1.50A  3.00us   Diodes Inc. Bridge -- for one element
.MODEL DI_KBP04G D  ( IS=39.2u RS=28.1m BV=400 IBV=5.00u
+ CJO=26.5p  M=0.333 N=4.38 TT=4.32u )


*SRC=KBP06G;DI_KBP06G;Diodes;Si;  600V  1.50A  3.00us   Diodes Inc. Bridge -- for one element
.MODEL DI_KBP06G D  ( IS=39.2u RS=28.1m BV=600 IBV=5.00u
+ CJO=26.5p  M=0.333 N=4.38 TT=4.32u )


*SRC=KBP08G;DI_KBP08G;Diodes;Si;  800V  1.50A  3.00us   Diodes Inc. Bridge -- for one element
.MODEL DI_KBP08G D  ( IS=39.2u RS=28.1m BV=800 IBV=5.00u
+ CJO=26.5p  M=0.333 N=4.38 TT=4.32u )


*SRC=KBP10G;DI_KBP10G;Diodes;Si;  1.00kV  1.50A  3.00us   Diodes Inc. Bridge -- for one element
.MODEL DI_KBP10G D  ( IS=39.2u RS=28.1m BV=1.00k IBV=5.00u
+ CJO=26.5p  M=0.333 N=4.38 TT=4.32u )


*SRC=KBP2005G;DI_KBP2005G;Diodes;Si;  50.0V  2.00A  3.00us   Diodes Inc. Bridge -- for one element
.MODEL DI_KBP2005G D  ( IS=143n RS=21.1m BV=50.0 IBV=5.00u
+ CJO=46.2p  M=0.333 N=2.12 TT=4.32u )


*SRC=KBP201G;DI_KBP201G;Diodes;Si;  100V  2.00A  3.00us   Diodes Inc. Bridge -- for one element
.MODEL DI_KBP201G D  ( IS=143n RS=21.1m BV=100 IBV=5.00u
+ CJO=46.2p  M=0.333 N=2.12 TT=4.32u )


*SRC=KBP202G;DI_KBP202G;Diodes;Si;  200V  2.00A  3.00us   Diodes Inc. Bridge -- for one element
.MODEL DI_KBP202G D  ( IS=143n RS=21.1m BV=200 IBV=5.00u
+ CJO=46.2p  M=0.333 N=2.12 TT=4.32u )


*SRC=KBP204G;DI_KBP204G;Diodes;Si;  400V  2.00A  3.00us   Diodes Inc. Bridge -- for one element
.MODEL DI_KBP204G D  ( IS=143n RS=21.1m BV=400 IBV=5.00u
+ CJO=46.2p  M=0.333 N=2.12 TT=4.32u )


*SRC=KBP206G;DI_KBP206G;Diodes;Si;  600V  2.00A  3.00us   Diodes Inc. Bridge -- for one element
.MODEL DI_KBP206G D  ( IS=143n RS=21.1m BV=600 IBV=5.00u
+ CJO=46.2p  M=0.333 N=2.12 TT=4.32u )


*SRC=KBP208G;DI_KBP208G;Diodes;Si;  800V  2.00A  3.00us   Diodes Inc. Bridge -- for one element
.MODEL DI_KBP208G D  ( IS=143n RS=21.1m BV=800 IBV=5.00u
+ CJO=46.2p  M=0.333 N=2.12 TT=4.32u )


*SRC=KBP210G;DI_KBP210G;Diodes;Si;  1.00kV  2.00A  3.00us   Diodes Inc. Bridge -- for one element
.MODEL DI_KBP210G D  ( IS=143n RS=21.1m BV=1.00k IBV=5.00u
+ CJO=46.2p  M=0.333 N=2.12 TT=4.32u )


*SRC=RH02;DI_RH02;Diodes;Si;  200V  0.500A  150ns   Diodes Inc. Fast Recovery Bridge Rectifier, per node
.MODEL DI_RH02 D  ( IS=2.25n RS=0.100 BV=200 IBV=5.00u
+ CJO=24.0p  M=0.333 N=1.70 TT=216n )


*SRC=RH04;DI_RH04;Diodes;Si;  400V  0.500A  150ns   Diodes Inc. Fast Recovery Bridge Rectifier, per node
.MODEL DI_RH04 D  ( IS=2.25n RS=0.100 BV=400 IBV=5.00u
+ CJO=24.0p  M=0.333 N=1.70 TT=216n )


*SRC=RH06;DI_RH06;Diodes;Si;  600V  0.500A  250ns   Diodes Inc. Fast Recovery Bridge Rectifier, per node
.MODEL DI_RH06 D  ( IS=2.25n RS=0.100 BV=600 IBV=5.00u
+ CJO=24.0p  M=0.333 N=1.70 TT=360n )


*SRC=KBP005G;DI_KBP005G;Diodes;Si;  50.0V  1.50A  3.00us   Diodes Inc. Bridge -- for one element
.MODEL DI_KBP005G D  ( IS=39.2u RS=28.1m BV=50.0 IBV=5.00u
+ CJO=26.5p  M=0.333 N=4.38 TT=4.32u )


*SRC=DLPA006;DI_DLPA006;Diodes;Si;  85.0V  0.160A  3.00us   Diodes, Inc.
Switching - one element of DLPA006 array
.MODEL DI_DLPA006 D  ( IS=59.0p RS=0.262 BV=85.0 IBV=5.00n
+ CJO=2.00p  M=0.333 N=1.78 TT=4.32u )


*SRC=MSB15MH; DI_MSB15MH; Diodes Inc.; Si;  1000V  1.50A    Diodes Bridge -- for one element

.MODEL DI_MSB15MH D  ( IS=1.14457E-09 RS=19m BV=1000 IBV=5.00u
+ CJO=43.5p  M=0.333 N=1.7 TT=4.32u )


*SRC=MSB25MH; DI_MSB25MH; Diodes Inc.; Si;  1000V  2.50A    Diodes Bridge -- for one element

.MODEL DI_MSB25MH D  ( IS=2.3E-10 RS=11.56m BV=1000 IBV=5.00u
+ CJO=52.5p  M=0.333 N=1.7 TT=4.32u )


*SRC=1N4934;DI_1N4934;Diodes;Si;  100V  1.00A  200ns   Diodes Inc. Fast
Rectifier
.MODEL DI_1N4934 D  ( IS=830n RS=34.0m BV=100 IBV=5.00u
+ CJO=26.5p  M=0.333 N=2.46 TT=288n )


*SRC=1N4935;DI_1N4935;Diodes;Si;  200V  1.00A  200ns   Diodes Inc. Fast
Rectifier
.MODEL DI_1N4935 D  ( IS=830n RS=34.0m BV=200 IBV=5.00u
+ CJO=26.5p  M=0.333 N=2.46 TT=288n )


*SRC=1N4936;DI_1N4936;Diodes;Si;  400V  1.00A  200ns   Diodes Inc. Fast
Rectifier
.MODEL DI_1N4936 D  ( IS=830n RS=34.0m BV=400 IBV=5.00u
+ CJO=26.5p  M=0.333 N=2.46 TT=288n )


*SRC=1N4937;DI_1N4937;Diodes;Si;  600V  1.00A  200ns   Diodes Inc. Fast
Rectifier
.MODEL DI_1N4937 D  ( IS=830n RS=34.0m BV=600 IBV=5.00u
+ CJO=26.5p  M=0.333 N=2.46 TT=288n )


* DFLU1400 SPICE model
*
* THIS MODEL IS A SPICE SUBCIRCUIT.
* ANY NETLIST USING IT MUST INCLUDE
* A STATEMENT WITH THE FOLLOWING SYNTAX
*
* X1 DFLU1400 A C
*
* SUBCIRCUIT NODE 1 -> ANODE
* SUBCIRCUIT NODE 2 -> CATHODE
*
.SUBCKT DFLU1400 1 2
D1 1 2 DFLU1400_1
D2 1 2 DFLU1400_2
*
.MODEL DFLU1400_1 D (
+LEVEL    = 1              IS       = 8.97113e-10    RS       = 0.218519       
+N        = 1.00753        BV       = 400            IBV      = 5e-06          
+CJO      = 1.7785e-11     VJ       = 0.468489       MJ       = 0.395956       
+FC       = 0.5            XTI      = 2.98187        EG       = 1.19064        
+TT       = 33e-9          IKF      = 6.06945e-06    TRS1     = -0.00446639    
+TRS2     = 9.32759e-06     )
*
.MODEL DFLU1400_2 D (
+LEVEL    = 1              IS       = 1.05089e-12    RS       = 0.146586       
+N        = 1.16507        BV       = 1E5            IBV      = 1e-06 
+CJO      = 1.7785e-11     VJ       = 0.468489       MJ       = 0.395956
+FC       = 0.5            XTI      = 3.14412        EG       = 1.05458
+TRS1     = 0.000149447    TRS2     = 2.90699e-05    IKF      = 9.9308e-06
+TT       = 33e-9 )
*
.ENDS DFLU1400


*SRC=ES1A;DI_ES1A;Diodes;Si;  50.0V  1.00A  20.0ns   Diodes Inc. 
.MODEL DI_ES1A D  ( IS=123n RS=42.0m BV=50.0 IBV=5.00u
+ CJO=18.5p  M=0.333 N=2.12 TT=28.8n )


*SRC=ES1B;DI_ES1B;Diodes;Si;  100V  1.00A  20.0ns   Diodes Inc. 
.MODEL DI_ES1B D  ( IS=123n RS=42.0m BV=100 IBV=5.00u
+ CJO=18.5p  M=0.333 N=2.12 TT=28.8n )


*SRC=ES1C;DI_ES1C;Diodes;Si;  150V  1.00A  20.0ns   Diodes Inc. 
.MODEL DI_ES1C D  ( IS=123n RS=42.0m BV=150 IBV=5.00u
+ CJO=18.5p  M=0.333 N=2.12 TT=28.8n )


*SRC=ES1D;DI_ES1D;Diodes;Si;  200V  1.00A  20.0ns   Diodes Inc. 
.MODEL DI_ES1D D  ( IS=123n RS=42.0m BV=200 IBV=5.00u
+ CJO=18.5p  M=0.333 N=2.12 TT=28.8n )


*SRC=ES1G;DI_ES1G;Diodes;Si;  400V  1.00A  20.0ns   Diodes Inc. 
.MODEL DI_ES1G D  ( IS=373n RS=64.3m BV=400 IBV=5.00u
+ CJO=18.5p  M=0.333 N=2.84 TT=28.8n )


*SRC=ES2A;DI_ES2A;Diodes;Si;  50.0V  2.00A  25.0ns   Diodes Inc. Fast
Rectifier
.MODEL DI_ES2A D  ( IS=267n RS=21.0m BV=50.0 IBV=5.00u
+ CJO=83.5p  M=0.333 N=1.70 TT=36.0n )


*****************************************************************************************
*SRC=ES2AA;DI_ES2AA;Diodes;Si;  50.0V  2.00A  25.0ns   Diodes Inc. Fast
Rectifier
.MODEL DI_ES2AA D  ( IS=267n RS=21.0m BV=50.0 IBV=5.00u
+ CJO=83.5p  M=0.333 N=1.70 TT=36.0n )
****************************************************************************************


*SRC=ES2B;DI_ES2B;Diodes;Si;  100V  2.00A  25.0ns   Diodes Inc. Fast
Rectifier
.MODEL DI_ES2B D  ( IS=267n RS=21.0m BV=100 IBV=5.00u
+ CJO=83.5p  M=0.333 N=1.70 TT=36.0n )


****************************************************************************************
SRC=ES2BA;DI_ES2BA;Diodes;Si;  100V  2.00A  25.0ns   Diodes Inc. Fast
Rectifier
.MODEL DI_ES2BA D  ( IS=267n RS=21.0m BV=100 IBV=5.00u
+ CJO=83.5p  M=0.333 N=1.70 TT=36.0n )
***************************************************************************************


*SRC=ES2C;DI_ES2C;Diodes;Si;  150V  2.00A  25.0ns   Diodes Inc. Fast
Rectifier
.MODEL DI_ES2C D  ( IS=267n RS=21.0m BV=150 IBV=5.00u
+ CJO=83.5p  M=0.333 N=1.70 TT=36.0n )


***************************************************************************************
*SRC=ES2CA;DI_ES2CA;Diodes;Si;  150V  2.00A  25.0ns   Diodes Inc. Fast
Rectifier
.MODEL DI_ES2CA D  ( IS=267n RS=21.0m BV=150 IBV=5.00u
+ CJO=83.5p  M=0.333 N=1.70 TT=36.0n )
*****************************************************************************************


*SRC=ES2D;DI_ES2D;Diodes;Si;  200V  2.00A  25.0ns   Diodes Inc. Fast
Rectifier
.MODEL DI_ES2D D  ( IS=267n RS=21.0m BV=200 IBV=5.00u
+ CJO=83.5p  M=0.333 N=1.70 TT=36.0n )


*****************************************************************************************
*SRC=ES2DA;DI_ES2DA;Diodes;Si;  200V  2.00A  25.0ns   Diodes Inc. Fast
Rectifier
.MODEL DI_ES2DA D  ( IS=267n RS=21.0m BV=200 IBV=5.00u
+ CJO=83.5p  M=0.333 N=1.70 TT=36.0n )
*****************************************************************************************


*SRC=ES2G;DI_ES2G;Diodes;Si;  400V  2.00A  25.0ns   Diodes Inc. Fast
Rectifier
.MODEL DI_ES2G D  ( IS=3.92n RS=21.0m BV=400 IBV=5.00u
+ CJO=83.5p  M=0.333 N=1.95 TT=36.0n )


*SRC=ES3A;DI_ES3A;Diodes;Si;  50.0V  3.00A  25.0ns   Diodes Inc. 
.MODEL DI_ES3A D  ( IS=7.27p RS=22.4m BV=50.0 IBV=10.0u
+ CJO=83.2p  M=0.333 N=0.700 TT=36.0n )


*SRC=ES3AB;DI_ES3AB;Diodes;Si;  50.0V  3.00A  25.0ns   Diodes Inc. 
.MODEL DI_ES3AB D  ( IS=7.27p RS=22.4m BV=50.0 IBV=10.0u
+ CJO=83.2p  M=0.333 N=0.700 TT=36.0n )


*SRC=ES3B;DI_ES3B;Diodes;Si;  100V  3.00A  25.0ns   Diodes Inc. 
.MODEL DI_ES3B D  ( IS=7.27p RS=22.4m BV=100 IBV=10.0u
+ CJO=83.2p  M=0.333 N=0.700 TT=36.0n )


*SRC=ES3BB;DI_ES3BB;Diodes;Si;  100V  3.00A  25.0ns   Diodes Inc. 
.MODEL DI_ES3BB D  ( IS=7.27p RS=22.4m BV=100 IBV=10.0u
+ CJO=83.2p  M=0.333 N=0.700 TT=36.0n )


*SRC=ES3C;DI_ES3C;Diodes;Si;  150V  3.00A  25.0ns   Diodes Inc. 
.MODEL DI_ES3C D  ( IS=7.27p RS=22.4m BV=150 IBV=10.0u
+ CJO=83.2p  M=0.333 N=0.700 TT=36.0n )


*SRC=ES3CB;DI_ES3CB;Diodes;Si;  150V  3.00A  25.0ns   Diodes Inc. 
.MODEL DI_ES3CB D  ( IS=7.27p RS=22.4m BV=150 IBV=10.0u
+ CJO=83.2p  M=0.333 N=0.700 TT=36.0n )


*SRC=ES3D;DI_ES3D;Diodes;Si;  200V  3.00A  25.0ns   Diodes Inc. 
.MODEL DI_ES3D D  ( IS=7.27p RS=22.4m BV=200 IBV=10.0u
+ CJO=83.2p  M=0.333 N=0.700 TT=36.0n )


*SRC=ES3DB;DI_ES3DB;Diodes;Si;  200V  3.00A  25.0ns   Diodes Inc. 
.MODEL DI_ES3DB D  ( IS=7.27p RS=22.4m BV=200 IBV=10.0u
+ CJO=83.2p  M=0.333 N=0.700 TT=36.0n )


*SRC=MUR120;DI_MUR120;Diodes;Si;  200V  1.00A  25.0ns   Diodes Inc. Super Fast Rectifier
.MODEL DI_MUR120 D  ( IS=7.06e-017 RS=73.4m BV=200 IBV=2.00u
+ CJO=49.9p  M=0.333 N=0.700 TT=36.0n )


*SRC=MURS120;DI_MURS120;Diodes;Si;  200V  1.00A  25.0ns   Diodes Inc. Super Fast Rectifier
.MODEL DI_MURS120 D  ( IS=17.1n RS=20.6m BV=200 IBV=2.00u
+ CJO=60.0p  M=0.333 N=1.73 TT=36.0n )
************************************************************************************************************************************


*SRC=MURS140;DI_MURS140;Diodes;Si;  400V  1.00A  50.0ns   Diodes Inc. Super Fast Rectifier
.MODEL DI_MURS140 D  ( IS=17.1n RS=20.6m BV=400 IBV=2.00u
+ CJO=45.0p  M=0.333 N=1.73 TT=72.0n )
***********************************************************************************************************************************


*SRC=MURS160;DI_MURS160;Diodes;Si;  600V  1.00A  50.0ns   Diodes Inc. Super Fast Rectifier
.MODEL DI_MURS160 D  ( IS=17.1n RS=20.6m BV=600 IBV=2.00u
+ CJO=45.0p  M=0.333 N=1.73 TT=72.0n )
***********************************************************************************************************************************


*SRC=MURS320;DI_MURS320;Diodes;Si;  200V  3.00A  25.0ns   Diodes Inc. Super Fast Rectifier
.MODEL DI_MURS320 D  ( IS=11.8n RS=7.89m BV=200 IBV=5.00u
+ CJO=45.0p  M=0.333 N=1.56 TT=36.0n )
***********************************************************************************************************************************


*SRC=PDU340;DI_PDU340;Diodes;Si;  400V  3.00A  50.0ns   Diodes Inc. Ultrafast Rectifier
.MODEL DI_PDU340 D  ( IS=3.74u RS=25.9m BV=400 IBV=10.0u
+ CJO=86.2p  M=0.333 N=2.58 TT=72.0n )


*SRC=PDU420;DI_PDU420;Diodes;Si;  400V  4.00A  25.0ns   Diodes Inc. ultrafast rectifier
.MODEL DI_PDU420 D  ( IS=189n RS=10.5m BV=400 IBV=5.00u
+ CJO=276p  M=0.333 N=1.73 TT=36.0n )


*SRC=PDU540;DI_PDU540;Diodes;Si;  400V  5.00A  35.0ns   Diodes Inc. Ultrafast Rectifier
.MODEL DI_PDU540 D  ( IS=2.68u RS=8.33m BV=400 IBV=10.0u
+ CJO=196p  M=0.333 N=2.27 TT=50.4n )


*SRC=PDU620;DI_PDU620;Diodes;Si;  200V  6.00A  25.0ns   Diodes Inc. Ultrafast Rectifier
.MODEL DI_PDU620 D  ( IS=190n RS=9.91m BV=200 IBV=5.00u
+ CJO=402p  M=0.333 N=1.69 TT=36.0n )


*SRC=PDU620CT;DI_PDU620CT;Diodes;Si;  200V  3.00A  25.0ns   Diodes Inc. Ultrafast Rectifier
.MODEL DI_PDU620CT D  ( IS=7.48n RS=19.5m BV=200 IBV=5.00u
+ CJO=223p  M=0.333 N=1.42 TT=36.0n )


*SRC=PR1001G;DI_PR1001G;Diodes;Si;  50.0V  1.00A  150ns   Diodes Inc. Fast
Rectifier
.MODEL DI_PR1001G D  ( IS=5.00n RS=29.8m BV=50.0 IBV=5.00u
+ CJO=27.8p  M=0.333 N=1.72 TT=216n )


*SRC=PR1002G;DI_PR1002G;Diodes;Si;  100V  1.00A  150ns   Diodes Inc. Fast
Rectifier
.MODEL DI_PR1002G D  ( IS=5.00n RS=29.8m BV=100 IBV=5.00u
+ CJO=27.8p  M=0.333 N=1.72 TT=216n )


*SRC=PR1003G;DI_PR1003G;Diodes;Si;  200V  1.00A  150ns   Diodes Inc. Fast
Rectifier
.MODEL DI_PR1003G D  ( IS=5.00n RS=29.8m BV=200 IBV=5.00u
+ CJO=27.8p  M=0.333 N=1.72 TT=216n )


*SRC=PR1004G;DI_PR1004G;Diodes;Si;  400V  1.00A  150ns   Diodes Inc. Fast
Rectifier
.MODEL DI_PR1004G D  ( IS=5.00n RS=29.8m BV=400 IBV=5.00u
+ CJO=27.8p  M=0.333 N=1.72 TT=216n )


*SRC=PR1005G;DI_PR1005G;Diodes;Si;  600V  1.00A  250ns   Diodes Inc. Fast
Rectifier
.MODEL DI_PR1005G D  ( IS=5.00n RS=29.8m BV=600 IBV=5.00u
+ CJO=19.9p  M=0.333 N=1.72 TT=360n )


*SRC=PR1006G;DI_PR1006G;Diodes;Si;  800V  1.00A  500ns   Diodes Inc. Fast
Rectifier
.MODEL DI_PR1006G D  ( IS=5.00n RS=29.8m BV=800 IBV=5.00u
+ CJO=19.9p  M=0.333 N=1.72 TT=720n )


*SRC=PR1007G;DI_PR1007G;Diodes;Si;  1.00kV  1.00A  500ns   Diodes Inc. Fast
Rectifier
.MODEL DI_PR1007G D  ( IS=5.00n RS=29.8m BV=1.00k IBV=5.00u
+ CJO=19.9p  M=0.333 N=1.72 TT=720n )


*SRC=PR6001;DI_PR6001;Diodes;Si;  50.0V  6.00A  150ns   Diodes Inc. Fast Rectifier 
.MODEL DI_PR6001 D  ( IS=863n RS=12.6m BV=50.0 IBV=10.0u 
+ CJO=663p  M=0.333 N=1.70 TT=216n )


*SRC=RS1A;DI_RS1A;Diodes;Si;  50.0V  1.00A  150ns   Diodes Inc. Fast Rectifier
.MODEL DI_RS1A D  ( IS=948n RS=81.3m BV=50.0 IBV=5.00u
+ CJO=27.7p  M=0.333 N=2.48 TT=216n )
*************************************************************************************************************************************


*SRC=RS1AB;DI_RS1AB;Diodes;Si;  50.0V  1.00A  150ns   Diodes Inc. Fast Rectifier
.MODEL DI_RS1AB D  ( IS=948n RS=81.3m BV=50.0 IBV=5.00u
+ CJO=27.7p  M=0.333 N=2.48 TT=216n )
*************************************************************************************************************************************


*SRC=RS1B;DI_RS1B;Diodes;Si;  100V  1.00A  150ns   Diodes Inc. Fast Rectifier
.MODEL DI_RS1B D  ( IS=948n RS=81.3m BV=100 IBV=5.00u
+ CJO=27.7p  M=0.333 N=2.48 TT=216n )
**************************************************************************************************************************************


*SRC=RS1BB;DI_RS1BB;Diodes;Si;  100V  1.00A  150ns   Diodes Inc. Fast Rectifier
.MODEL DI_RS1BB D  ( IS=948n RS=81.3m BV=100 IBV=5.00u
+ CJO=27.7p  M=0.333 N=2.48 TT=216n )
**************************************************************************************************************************************


*SRC=RS1D;DI_RS1D;Diodes;Si;  200V  1.00A  150ns   Diodes Inc. Fast Rectifier
.MODEL DI_RS1D D  ( IS=948n RS=81.3m BV=200 IBV=5.00u
+ CJO=27.7p  M=0.333 N=2.48 TT=216n )
**************************************************************************************************************************************


*SRC=RS1DB;DI_RS1DB;Diodes;Si;  200V  1.00A  150ns   Diodes Inc. Fast Rectifier
.MODEL DI_RS1DB D  ( IS=948n RS=81.3m BV=200 IBV=5.00u
+ CJO=27.7p  M=0.333 N=2.48 TT=216n )
**************************************************************************************************************************************


*SRC=RS1G;DI_RS1G;Diodes;Si;  400V  1.00A  150ns   Diodes Inc. Fast Rectifier
.MODEL DI_RS1G D  ( IS=948n RS=81.3m BV=400 IBV=5.00u
+ CJO=27.7p  M=0.333 N=2.48 TT=216n )
**************************************************************************************************************************************


*SRC=RS1GB;DI_RS1GB;Diodes;Si;  400V  1.00A  150ns   Diodes Inc. Fast Rectifier
.MODEL DI_RS1GB D  ( IS=948n RS=81.3m BV=400 IBV=5.00u
+ CJO=27.7p  M=0.333 N=2.48 TT=216n )
**************************************************************************************************************************************


*SRC=RS1J;DI_RS1J;Diodes;Si;  600V  1.00A  250ns   Diodes Inc. Fast Rectifier
.MODEL DI_RS1J D  ( IS=948n RS=81.3m BV=600 IBV=5.00u
+ CJO=27.7p  M=0.333 N=2.48 TT=360n )
**************************************************************************************************************************************


*SRC=RS1JB;DI_RS1JB;Diodes;Si;  600V  1.00A  250ns   Diodes Inc. Fast Rectifier
.MODEL DI_RS1JB D  ( IS=948n RS=81.3m BV=600 IBV=5.00u
+ CJO=27.7p  M=0.333 N=2.48 TT=360n )
**************************************************************************************************************************************


*SRC=RS1K;DI_RS1K;Diodes;Si;  800V  1.00A  500ns   Diodes Inc. Fast Rectifier
.MODEL DI_RS1K D  ( IS=948n RS=81.3m BV=800 IBV=5.00u
+ CJO=27.7p  M=0.333 N=2.48 TT=720n )
**************************************************************************************************************************************


*SRC=RS1KB;DI_RS1KB;Diodes;Si;  800V  1.00A  500ns   Diodes Inc. Fast Rectifier
.MODEL DI_RS1KB D  ( IS=948n RS=81.3m BV=800 IBV=5.00u
+ CJO=27.7p  M=0.333 N=2.48 TT=720n )
**************************************************************************************************************************************


*SRC=RS1M;DI_RS1M;Diodes;Si;  1.00kV  1.00A  500ns   Diodes Inc. Fast Rectifier
.MODEL DI_RS1M D  ( IS=948n RS=81.3m BV=1.00k IBV=5.00u
+ CJO=27.7p  M=0.333 N=2.48 TT=720n )
**************************************************************************************************************************************


*SRC=RS1MB;DI_RS1MB;Diodes;Si;  1.00kV  1.00A  500ns   Diodes Inc. Fast Rectifier
.MODEL DI_RS1MB D  ( IS=948n RS=81.3m BV=1.00k IBV=5.00u
+ CJO=27.7p  M=0.333 N=2.48 TT=720n )
**************************************************************************************************************************************


*SRC=RS2A;DI_RS2A;Diodes;Si;  50.0V  1.50A  150ns   Diodes Inc. Fast Rectifier
.MODEL DI_RS2A D  ( IS=169u RS=4.81m BV=50.0 IBV=5.00u
+ CJO=55.5p  M=0.333 N=6.02 TT=216n )
******************************************************************************************************


*SRC=RS2AA;DI_RS2AA;Diodes;Si;  50.0V  1.50A  150ns   Diodes Inc. Fast Rectifier
.MODEL DI_RS2AA D  ( IS=169u RS=4.81m BV=50.0 IBV=5.00u
+ CJO=55.5p  M=0.333 N=6.02 TT=216n )
******************************************************************************************************


*SRC=RS2B;DI_RS2B;Diodes;Si;  100V  1.50A  150ns   Diodes Inc. Fast Rectifier
.MODEL DI_RS2B D  ( IS=169u RS=4.81m BV=100 IBV=5.00u
+ CJO=55.5p  M=0.333 N=6.02 TT=216n )
******************************************************************************************************


*SRC=RS2BA;DI_RS2BA;Diodes;Si;  100V  1.50A  150ns   Diodes Inc. Fast Rectifier
.MODEL DI_RS2BA D  ( IS=169u RS=4.81m BV=100 IBV=5.00u
+ CJO=55.5p  M=0.333 N=6.02 TT=216n )
******************************************************************************************************


*SRC=RS2D;DI_RS2D;Diodes;Si;  200V  1.50A  150ns   Diodes Inc. Fast Rectifier
.MODEL DI_RS2D D  ( IS=169u RS=4.81m BV=200 IBV=5.00u
+ CJO=55.5p  M=0.333 N=6.02 TT=216n )
******************************************************************************************************


*SRC=RS2DA;DI_RS2DA;Diodes;Si;  200V  1.50A  150ns   Diodes Inc. Fast Rectifier
.MODEL DI_RS2DA D  ( IS=169u RS=4.81m BV=200 IBV=5.00u
+ CJO=55.5p  M=0.333 N=6.02 TT=216n )
******************************************************************************************************


*SRC=RS2G;DI_RS2G;Diodes;Si;  400V  1.50A  150ns   Diodes Inc. Fast Rectifier
.MODEL DI_RS2G D  ( IS=169u RS=4.81m BV=400 IBV=5.00u
+ CJO=55.5p  M=0.333 N=6.02 TT=216n )
******************************************************************************************************


*SRC=RS2GA;DI_RS2GA;Diodes;Si;  400V  1.50A  150ns   Diodes Inc. Fast Rectifier
.MODEL DI_RS2GA D  ( IS=169u RS=4.81m BV=400 IBV=5.00u
+ CJO=55.5p  M=0.333 N=6.02 TT=216n )
******************************************************************************************************


*SRC=RS2J;DI_RS2J;Diodes;Si;  600V  1.50A  250ns   Diodes Inc. Fast Rectifier
.MODEL DI_RS2J D  ( IS=169u RS=4.81m BV=600 IBV=5.00u
+ CJO=55.5p  M=0.333 N=6.02 TT=360n )
******************************************************************************************************


*SRC=RS2JA;DI_RS2JA;Diodes;Si;  600V  1.50A  250ns   Diodes Inc. Fast Rectifier
.MODEL DI_RS2JA D  ( IS=169u RS=4.81m BV=600 IBV=5.00u
+ CJO=55.5p  M=0.333 N=6.02 TT=360n )
******************************************************************************************************


*SRC=RS2K;DI_RS2K;Diodes;Si;  800V  1.50A  500ns   Diodes Inc. Fast Rectifier
.MODEL DI_RS2K D  ( IS=169u RS=4.81m BV=800 IBV=5.00u
+ CJO=55.5p  M=0.333 N=6.02 TT=720n )
******************************************************************************************************


*SRC=RS2KA;DI_RS2KA;Diodes;Si;  800V  1.50A  500ns   Diodes Inc. Fast Rectifier
.MODEL DI_RS2KA D  ( IS=169u RS=4.81m BV=800 IBV=5.00u
+ CJO=55.5p  M=0.333 N=6.02 TT=720n )
******************************************************************************************************


*SRC=RS2M;DI_RS2M;Diodes;Si;  1.00kV  1.50A  500ns   Diodes Inc. Fast Rectifier
.MODEL DI_RS2M D  ( IS=169u RS=4.81m BV=1.00k IBV=5.00u
+ CJO=55.5p  M=0.333 N=6.02 TT=720n )
******************************************************************************************************


*SRC=RS2MA;DI_RS2MA;Diodes;Si;  1.00kV  1.50A  500ns   Diodes Inc. Fast Rectifier
.MODEL DI_RS2MA D  ( IS=169u RS=4.81m BV=1.00k IBV=5.00u
+ CJO=55.5p  M=0.333 N=6.02 TT=720n )
******************************************************************************************************


*SRC=RS3A;DI_RS3A;Diodes;Si;  50.0V  3.00A  150ns   Diodes Inc. Fast Rectifier
.MODEL DI_RS3A D  ( IS=200n RS=25.4m BV=50.0 IBV=5.00u
+ CJO=92.5p  M=0.333 N=2.23 TT=216n )
**********************************************************************************************************


*SRC=RS3AB;DI_RS3AB;Diodes;Si;  50.0V  3.00A  150ns   Diodes Inc. Fast Rectifier
.MODEL DI_RS3AB D  ( IS=200n RS=25.4m BV=50.0 IBV=5.00u
+ CJO=92.5p  M=0.333 N=2.23 TT=216n )
**********************************************************************************************************


*SRC=RS3B;DI_RS3B;Diodes;Si;  100V  3.00A  150ns   Diodes Inc. Fast Rectifier
.MODEL DI_RS3B D  ( IS=200n RS=25.4m BV=100 IBV=5.00u
+ CJO=92.5p  M=0.333 N=2.23 TT=216n )
**********************************************************************************************************


*SRC=RS3BB;DI_RS3BB;Diodes;Si;  100V  3.00A  150ns   Diodes Inc. Fast Rectifier
.MODEL DI_RS3BB D  ( IS=200n RS=25.4m BV=100 IBV=5.00u
+ CJO=92.5p  M=0.333 N=2.23 TT=216n )
**********************************************************************************************************


*SRC=RS3D;DI_RS3D;Diodes;Si;  200V  3.00A  150ns   Diodes Inc. Fast Rectifier
.MODEL DI_RS3D D  ( IS=200n RS=25.4m BV=200 IBV=5.00u
+ CJO=92.5p  M=0.333 N=2.23 TT=216n )
**********************************************************************************************************


*SRC=RS3DB;DI_RS3DB;Diodes;Si;  200V  3.00A  150ns   Diodes Inc. Fast Rectifier
.MODEL DI_RS3DB D  ( IS=200n RS=25.4m BV=200 IBV=5.00u
+ CJO=92.5p  M=0.333 N=2.23 TT=216n )
**********************************************************************************************************


*SRC=RS3G;DI_RS3G;Diodes;Si;  400V  3.00A  150ns   Diodes Inc. Fast Rectifier
.MODEL DI_RS3G D  ( IS=200n RS=25.4m BV=400 IBV=5.00u
+ CJO=92.5p  M=0.333 N=2.23 TT=216n )
**********************************************************************************************************


*SRC=RS3GB;DI_RS3GB;Diodes;Si;  400V  3.00A  150ns   Diodes Inc. Fast Rectifier
.MODEL DI_RS3GB D  ( IS=200n RS=25.4m BV=400 IBV=5.00u
+ CJO=92.5p  M=0.333 N=2.23 TT=216n )
**********************************************************************************************************


*SRC=RS3J;DI_RS3J;Diodes;Si;  600V  3.00A  250ns   Diodes Inc. Fast Rectifier
.MODEL DI_RS3J D  ( IS=200n RS=25.4m BV=600 IBV=5.00u
+ CJO=92.5p  M=0.333 N=2.23 TT=360n )
**********************************************************************************************************


*SRC=RS3JB;DI_RS3JB;Diodes;Si;  600V  3.00A  250ns   Diodes Inc. Fast Rectifier
.MODEL DI_RS3JB D  ( IS=200n RS=25.4m BV=600 IBV=5.00u
+ CJO=92.5p  M=0.333 N=2.23 TT=360n )
**********************************************************************************************************


*SRC=RS3K;DI_RS3K;Diodes;Si;  800V  3.00A  500ns   Diodes Inc. Fast Rectifier
.MODEL DI_RS3K D  ( IS=200n RS=25.4m BV=800 IBV=5.00u
+ CJO=92.5p  M=0.333 N=2.23 TT=720n )
***********************************************************************************************************


*SRC=RS3KB;DI_RS3KB;Diodes;Si;  800V  3.00A  500ns   Diodes Inc. Fast Rectifier
.MODEL DI_RS3KB D  ( IS=200n RS=25.4m BV=800 IBV=5.00u
+ CJO=92.5p  M=0.333 N=2.23 TT=720n )
***********************************************************************************************************


*SRC=RS3M;DI_RS3M;Diodes;Si;  1.00kV  3.00A  500ns   Diodes Inc. Fast Rectifier
.MODEL DI_RS3M D  ( IS=200n RS=25.4m BV=1.00k IBV=5.00u
+ CJO=92.5p  M=0.333 N=2.23 TT=720n )
***********************************************************************************************************


*SRC=RS3MB;DI_RS3MB;Diodes;Si;  1.00kV  3.00A  500ns   Diodes Inc. Fast Rectifier
.MODEL DI_RS3MB D  ( IS=200n RS=25.4m BV=1.00k IBV=5.00u
+ CJO=92.5p  M=0.333 N=2.23 TT=720n )
***********************************************************************************************************


*SRC=SF10AG;DI_SF10AG;Diodes;Si;  50.0V  1.00A  35.0ns   Diodes Inc. 
.MODEL DI_SF10AG D  ( IS=1.42n RS=42.0m BV=50.0 IBV=10.0u
+ CJO=139p  M=0.333 N=1.70 TT=50.4n )


*SRC=SF10BG;DI_SF10BG;Diodes;Si;  100V  1.00A  35.0ns   Diodes Inc. 
.MODEL DI_SF10BG D  ( IS=1.42n RS=42.0m BV=100 IBV=10.0u
+ CJO=139p  M=0.333 N=1.70 TT=50.4n )


*SRC=SF10CG;DI_SF10CG;Diodes;Si;  150V  1.00A  35.0ns   Diodes Inc. 
.MODEL DI_SF10CG D  ( IS=1.42n RS=42.0m BV=150 IBV=10.0u
+ CJO=139p  M=0.333 N=1.70 TT=50.4n )


*SRC=SF10DG;DI_SF10DG;Diodes;Si;  200V  1.00A  35.0ns   Diodes Inc. 
.MODEL DI_SF10DG D  ( IS=1.42n RS=42.0m BV=200 IBV=10.0u
+ CJO=139p  M=0.333 N=1.70 TT=50.4n )


*SRC=SF10FG;DI_SF10FG;Diodes;Si; 300V 1.00A 40.0ns Diodes Inc. -
.MODEL DI_SF10FG D ( IS=50.9p RS=75.5m BV=300 IBV=10.0u
+ CJO=139p M=0.333 N=1.70 TT=57.6n )


*SRC=SF10GG;DI_SF10GG;Diodes;Si; 400V 1.00A 40.0ns Diodes Inc. -
.MODEL DI_SF10GG D ( IS=50.9p RS=75.5m BV=400 IBV=10.0u
+ CJO=139p M=0.333 N=1.70 TT=57.6n )


*SRC=SF10HG;DI_SF10HG;Diodes;Si; 500V 1.00A 50.0ns Diodes Inc. -
.MODEL DI_SF10HG D ( IS=13.5u RS=30.9m BV=500 IBV=10.0u
+ CJO=92.5p M=0.333 N=5.40 TT=72.0n )


*SRC=SF10JG;DI_SF10JG;Diodes;Si;  600V  1.00A  50.0ns   Diodes Inc. -
.MODEL DI_SF10JG D  ( IS=13.5u RS=30.9m BV=600 IBV=10.0u
+ CJO=92.5p  M=0.333 N=5.40 TT=72.0n )


*SRC=UF1001;DI_UF1001;Diodes;Si;  50.0V  1.00A  50.0ns   Diodes Inc. 1.0A Ultra-Fast Rectifier
.MODEL DI_UF1001 D  ( IS=125u RS=17.5m BV=50.0 IBV=5.00u
+ CJO=79.6p  M=0.333 N=3.75 TT=72.0n )


*SRC=UF1002;DI_UF1002;Diodes;Si;  100V  1.00A  50.0ns   Diodes Inc. 1.0A Ultra-Fast Rectifier
.MODEL DI_UF1002 D  ( IS=125u RS=17.5m BV=100 IBV=5.00u
+ CJO=79.6p  M=0.333 N=3.75 TT=72.0n )


*SRC=UF1003;DI_UF1003;Diodes;Si;  200V  1.00A  50.0ns   Diodes Inc. 1.0A Ultra-Fast Rectifier
.MODEL DI_UF1003 D  ( IS=125u RS=17.5m BV=200 IBV=5.00u
+ CJO=79.6p  M=0.333 N=3.75 TT=72.0n )


*SRC=UF1004;DI_UF1004;Diodes;Si;  400V  1.00A  50.0ns   Diodes Inc. 1.0A Ultra-Fast Rectifier
.MODEL DI_UF1004 D  ( IS=38.7u RS=15.4m BV=400 IBV=5.00u
+ CJO=79.6p  M=0.333 N=4.17 TT=72.0n )


*SRC=UF1005;DI_UF1005;Diodes;Si;  600V  1.00A  50.0ns   Diodes Inc. 1.0A Ultra-Fast Rectifier
.MODEL DI_UF1005 D  ( IS=13.9u RS=56.6m BV=600 IBV=5.00u
+ CJO=46.4p  M=0.333 N=4.11 TT=72.0n )


*SRC=UF1006;DI_UF1006;Diodes;Si;  800V  1.00A  50.0ns   Diodes Inc. 1.0A Ultra-Fast Rectifier
.MODEL DI_UF1006 D  ( IS=13.9u RS=56.6m BV=800 IBV=5.00u
+ CJO=46.4p  M=0.333 N=4.11 TT=72.0n )


*SRC=UF1007;DI_UF1007;Diodes;Si;  1.00kV  1.00A  50.0ns   Diodes Inc. 1.0A Ultra-Fast Rectifier
.MODEL DI_UF1007 D  ( IS=13.9u RS=56.6m BV=1.00k IBV=5.00u
+ CJO=46.4p  M=0.333 N=4.11 TT=72.0n )


*SRC=UF3001;DI_UF3001;Diodes;Si;  50.0V  3.00A  50.0ns   Diodes Inc. Ultra-Fast Rectifier
.MODEL DI_UF3001 D  ( IS=70.7u RS=43.0u BV=50.0 IBV=10.0u
+ CJO=139p  M=0.333 N=4.27 TT=72.0n )


*SRC=UF3002;DI_UF3002;Diodes;Si;  100V  3.00A  50.0ns   Diodes Inc. Ultra-Fast Rectifier
.MODEL DI_UF3002 D  ( IS=70.7u RS=43.0u BV=100 IBV=5.00u
+ CJO=139p  M=0.333 N=4.27 TT=72.0n )


*SRC=UF3003;DI_UF3003;Diodes;Si;  200V  3.00A  50.0ns   Diodes Inc. Ultra-Fast Rectifier
.MODEL DI_UF3003 D  ( IS=70.7u RS=43.0u BV=200 IBV=5.00u
+ CJO=139p  M=0.333 N=4.27 TT=72.0n )


*SRC=UF3004;DI_UF3004;Diodes;Si;  400V  3.00A  50.0ns   Diodes Inc. Ultra-Fast Rectifier
.MODEL DI_UF3004 D  ( IS=9.58u RS=15.4m BV=400 IBV=5.00u
+ CJO=139p  M=0.333 N=3.45 TT=72.0n )


*SRC=UF3005;DI_UF3005;Diodes;Si;  600V  3.00A  75.0ns   Diodes Inc. Ultra-Fast Rectifier
.MODEL Di_UF3005 D  ( IS=4.50u RS=14.1m BV=600 IBV=10.0u
+ CJO=92.5p  M=0.333 N=4.29 TT=108n )


*SRC=UF3006;DI_UF3006;Diodes;Si;  800V  3.00A  75.0ns   Diodes Inc. Ultra-Fast Rectifier
.MODEL Di_UF3006 D  ( IS=4.50u RS=14.1m BV=800 IBV=10.0u
+ CJO=92.5p  M=0.333 N=4.29 TT=108n )


*SRC=UF3007;Di_UF3007;Diodes;Si;  1.00kV  3.00A  75.0ns   Diodes Inc. Ultra-Fast Rectifier
.MODEL Di_UF3007 D  ( IS=4.50u RS=14.1m BV=1.00k IBV=10.0u
+ CJO=92.5p  M=0.333 N=4.29 TT=108n )


*SRC=US1A;DI_US1A;Diodes;Si;  50.0V  1.00A  50.0ns   Diodes Inc. -
.MODEL DI_US1A D  ( IS=667n RS=72.0m BV=50.0 IBV=5.00u
+ CJO=37.0p  M=0.333 N=2.41 TT=72.0n )


*SRC=US1B;DI_US1B;Diodes;Si;  100V  1.00A  50.0ns   Diodes Inc. -
.MODEL DI_US1B D  ( IS=667n RS=72.0m BV=100 IBV=5.00u
+ CJO=37.0p  M=0.333 N=2.41 TT=72.0n )


*SRC=US1D;DI_US1D;Diodes;Si;  200V  1.00A  50.0ns   Diodes Inc. -
.MODEL DI_US1D D  ( IS=667n RS=72.0m BV=200 IBV=5.00u
+ CJO=37.0p  M=0.333 N=2.41 TT=72.0n )


*SRC=US1G;DI_US1G;Diodes;Si;  400V  1.00A  50.0ns   Diodes Inc. 
.MODEL DI_US1G D  ( IS=540p RS=0.116 BV=400 IBV=5.00u
+ CJO=37.0p  M=0.333 N=1.70 TT=72.0n )


*SRC=US1J;DI_US1J;Diodes;Si;  600V  1.00A  75.0ns   Diodes Inc. -
.MODEL DI_US1J D  ( IS=709n RS=82.3m BV=600 IBV=5.00u
+ CJO=18.5p  M=0.333 N=3.23 TT=108n )


*SRC=US1K;DI_US1K;Diodes;Si;  800V  1.00A  75.0ns   Diodes Inc. -
.MODEL DI_US1K D  ( IS=709n RS=82.3m BV=800 IBV=5.00u
+ CJO=18.5p  M=0.333 N=3.23 TT=108n )


*SRC=US1M;DI_US1M;Diodes;Si;  1.00kV  1.00A  75.0ns   Diodes Inc. -
.MODEL DI_US1M D  ( IS=709n RS=82.3m BV=1.00k IBV=5.00u
+ CJO=18.5p  M=0.333 N=3.23 TT=108n )


*SRC=UF5A400D1;DI_UF5A400D1;Diodes;Si;  400V  5.00A  28.0ns   Diodes Inc. Ultra-Fast Rectifier
.MODEL DI_UF5A400D1 D  ( IS=129n RS=20.58m BV=510 IBV=10.00u
+ CJO=125.5p  M=0.333 N=1.9 TT=28.0n)


*DFLF1800 Spice Model v1.0 Last Revised 03/06/2014  Diodes Inc Fast Recovery Rectifier

.MODEL DI_DFLF1800 D  ( IS=59.0n RS=44.7m BV=800 IBV=10.00u
+ CJO=12.4p  M=0.245 N=2.235 TT=4.32u )

*                (c)  2014 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA


*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=25Aug2016
*VERSION=1

.SUBCKT RS1MWF 1 2
D1 1 2 DF
D2 1 2 DR
.MODEL DF D ( IS=5p RS=.041 BV=1000 IKF=80u CJO=15p  M=0.35 VJ=.65 N=1 TT=460n EG=.7 TRS1=0.01m XTI=15)
.model DR D (N=10 ISR=6.5n BV=1010 IBV=100u EG=.8 RS=2 CJO=1p VJ=.65)
.ENDS

*                (c)  2016 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=25Aug2016
*VERSION=1

.SUBCKT RS1MSWF 1 2
D1 1 2 DF
D2 1 2 DR
.MODEL DF D  ( IS=.3p RS=.1 BV=1000 IKF=500u CJO=6p  M=0.35 VJ=.65 N=1 TT=500n EG=.7 TRS1=.01m XTI=16)
.model DR D(N=10 ISR=6.5n BV=1010 IBV=100u EG=.55 RS=2.6 CJO=1p VJ=.65)
.ENDS

*                (c)  2016 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=25Aug2016
*VERSION=1

.SUBCKT RS1MSWFQ 1 2
D1 1 2 DF
D2 1 2 DR
.MODEL DF D  ( IS=.3p RS=.1 BV=1000 IKF=500u CJO=6p  M=0.35 VJ=.65 N=1 TT=500n EG=.7 TRS1=.01m XTI=16)
.model DR D(N=10 ISR=6.5n BV=1010 IBV=100u EG=.55 RS=2.6 CJO=1p VJ=.65)
.ENDS

*                (c)  2016 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*SRC=1N4933;DI_1N4933;Diodes;Si;  50.0V  1.00A  200ns   Diodes Inc. Fast
Rectifier
.MODEL DI_1N4933 D  ( IS=830n RS=34.0m BV=50.0 IBV=5.00u
+ CJO=26.5p  M=0.333 N=2.46 TT=288n )


*SRC=AZ23C10;DI_AZ23C10;Diodes;Zener <=10V; 10.0V  0.300W   Diodes Inc. Per node.  Device contains two
*SYM=HZEN
.SUBCKT DI_AZ23C10  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 8.35
.MODEL DF D ( IS=12.4p RS=31.6 N=1.10
+ CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.47f RS=3.45 N=2.23 )
.ENDS


*SRC=AZ23C10W;DI_AZ23C10W;Diodes;Zener <=10V; 10.0V  0.200W   Diodes Inc. Per node.  Device contains two
*SYM=HZEN
.SUBCKT DI_AZ23C10W  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 8.32
.MODEL DF D ( IS=8.24p RS=30.4 N=1.10
+ CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.65f RS=3.45 N=2.23 )
.ENDS


*SRC=AZ23C11;DI_AZ23C11;Diodes;Zener 10V-50V; 11.0V  0.300W   Diodes Inc. Per node.  Device contains two
*SYM=HZEN
.SUBCKT DI_AZ23C11  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 8.79
.MODEL DF D ( IS=11.2p RS=31.3 N=1.10
+ CJO=41.5p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.25f RS=4.60 N=2.97 )
.ENDS



*SRC=AZ23C12;DI_AZ23C12;Diodes;Zener 10V-50V; 12.0V  0.300W   Diodes Inc. Per node.  Device contains two
*SYM=HZEN
.SUBCKT DI_AZ23C12  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 9.78
.MODEL DF D ( IS=10.3p RS=31.0 N=1.10
+ CJO=39.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.06f RS=4.60 N=2.97 )
.ENDS


*SRC=AZ23C13;DI_AZ23C13;Diodes;Zener 10V-50V; 13.0V  0.300W   Diodes Inc. Per node.  Device contains two
*SYM=HZEN
.SUBCKT DI_AZ23C13  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 10.7
.MODEL DF D ( IS=9.51p RS=30.8 N=1.10
+ CJO=37.7p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.90f RS=9.46 N=3.00 )
.ENDS


*SRC=AZ23C15;DI_AZ23C15;Diodes;Zener 10V-50V; 15.0V  0.300W   Diodes Inc. Per node.  Device contains two
*SYM=HZEN
.SUBCKT DI_AZ23C15  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 12.7
.MODEL DF D ( IS=8.24p RS=30.4 N=1.10
+ CJO=31.4p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.65f RS=14.5 N=3.00 )
.ENDS


*SRC=AZ23C16;DI_AZ23C16;Diodes;Zener 10V-50V; 16.0V  0.300W   Diodes Inc. Per node.  Device contains two
*SYM=HZEN
.SUBCKT DI_AZ23C16  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 13.6
.MODEL DF D ( IS=7.72p RS=30.2 N=1.10
+ CJO=30.2p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.54f RS=24.5 N=3.00 )
.ENDS



*SRC=AZ23C18;DI_AZ23C18;Diodes;Zener 10V-50V; 18.0V  0.300W   Diodes Inc. Per node.  Device contains two
*SYM=HZEN
.SUBCKT DI_AZ23C18  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 15.6
.MODEL DF D ( IS=6.87p RS=29.9 N=1.10
+ CJO=26.4p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.37f RS=34.5 N=3.00 )
.ENDS



*SRC=AZ23C18W;DI_AZ23C18W;Diodes;Zener 10V-50V; 18.0V  0.200W   Diodes Inc. Per node.  Device contains two
*SYM=HZEN
.SUBCKT DI_AZ23C18W  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 15.5
.MODEL DF D ( IS=4.58p RS=28.7 N=1.10
+ CJO=26.4p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=9.16e-016 RS=34.5 N=3.00 )
.ENDS



*SRC=AZ23C20;DI_AZ23C20;Diodes;Zener 10V-50V; 20.0V  0.300W   Diodes Inc. Per node.  Device contains two
*SYM=HZEN
.SUBCKT DI_AZ23C20  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 17.6
.MODEL DF D ( IS=6.18p RS=29.6 N=1.10
+ CJO=23.9p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.24f RS=34.5 N=3.00 )
.ENDS



*SRC=AZ23C22;DI_AZ23C22;Diodes;Zener 10V-50V; 22.0V  0.300W   Diodes Inc. Per node.  Device contains two
*SYM=HZEN
.SUBCKT DI_AZ23C22  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 19.5
.MODEL DF D ( IS=5.62p RS=29.3 N=1.10
+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.12f RS=39.5 N=3.00 )
.ENDS



*SRC=AZ23C24;DI_AZ23C24;Diodes;Zener 10V-50V; 24.0V  0.300W   Diodes Inc. Per node.  Device contains two
*SYM=HZEN
.SUBCKT DI_AZ23C24  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 21.4
.MODEL DF D ( IS=5.15p RS=29.1 N=1.10
+ CJO=21.4p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.03f RS=64.5 N=3.00 )
.ENDS



*SRC=AZ23C27;DI_AZ23C27;Diodes;Zener 10V-50V; 27.0V  0.300W   Diodes Inc. Per node.  Device contains two
*SYM=HZEN
.SUBCKT DI_AZ23C27  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 24.4
.MODEL DF D ( IS=4.58p RS=28.7 N=1.10
+ CJO=20.7p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=9.16e-016 RS=64.5 N=3.00 )
.ENDS



*SRC=AZ23C2V7;DI_AZ23C2V7;Diodes;Zener <=10V; 2.70V  0.300W   Diodes Inc. Per node.  Device contains two
*SYM=HZEN
.SUBCKT DI_AZ23C2V7  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.263
.MODEL DF D ( IS=45.8p RS=35.3 N=1.10
+ CJO=450p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=9.16f RS=67.5 N=3.00 ).ENDS



*SRC=AZ23C30;DI_AZ23C30;Diodes;Zener 10V-50V; 30.0V  0.300W   Diodes Inc. Per node.  Device contains two
*SYM=HZEN
.SUBCKT DI_AZ23C30  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 27.4
.MODEL DF D ( IS=4.12p RS=28.4 N=1.10
+ CJO=19.5p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.24e-016 RS=64.5 N=3.00 ).ENDS



*SRC=AZ23C33;DI_AZ23C33;Diodes;Zener 10V-50V; 33.0V  0.300W   Diodes Inc. Per node.  Device contains two
*SYM=HZEN
.SUBCKT DI_AZ23C33  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 30.4
.MODEL DF D ( IS=3.75p RS=28.2 N=1.10
+ CJO=18.9p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=7.49e-016 RS=64.5 N=3.00 ).ENDS



*SRC=AZ23C36;DI_AZ23C36;Diodes;Zener 10V-50V; 36.0V  0.300W   Diodes Inc. Per node.  Device contains two
*SYM=HZEN
.SUBCKT DI_AZ23C36  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 33.3
.MODEL DF D ( IS=3.43p RS=27.9 N=1.10
+ CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.87e-016 RS=74.5 N=3.00 ).ENDS



*SRC=AZ23C39;DI_AZ23C39;Diodes;Zener 10V-50V; 39.0V  0.300W   Diodes Inc. Per node.  Device contains two
*SYM=HZEN
.SUBCKT DI_AZ23C39  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 36.3
.MODEL DF D ( IS=3.17p RS=27.7 N=1.10
+ CJO=17.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.34e-016 RS=74.5 N=3.00 ).ENDS



*SRC=AZ23C3V0;DI_AZ23C3V0;Diodes;Zener <=10V; 3.00V  0.300W   Diodes Inc. Per node.  Device contains two
*SYM=HZEN
.SUBCKT DI_AZ23C3V0  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.495
.MODEL DF D ( IS=41.2p RS=35.0 N=1.10
+ CJO=417p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.24f RS=79.5 N=3.00 ).ENDS



*SRC=AZ23C3V3;DI_AZ23C3V3;Diodes;Zener <=10V; 3.30V  0.300W   Diodes Inc. Per node.  Device contains two
*SYM=HZEN
.SUBCKT DI_AZ23C3V3  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.787
.MODEL DF D ( IS=37.5p RS=34.7 N=1.10
+ CJO=397p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=7.49f RS=79.5 N=3.00 ).ENDS



*SRC=AZ23C3V6;DI_AZ23C3V6;Diodes;Zener <=10V; 3.60V  0.300W   Diodes Inc. Per node.  Device contains two
*SYM=HZEN
.SUBCKT DI_AZ23C3V6 1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.08
.MODEL DF D ( IS=34.3p RS=34.5 N=1.10
+ CJO=384p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.87f RS=79.5 N=3.00 ).ENDS



*SRC=AZ23C3V9;DI_AZ23C3V9;Diodes;Zener <=10V; 3.60V  0.300W   Diodes Inc. Per node.  Device contains two
*SYM=HZEN
.SUBCKT DI_AZ23C3V9  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.08
.MODEL DF D ( IS=34.3p RS=34.5 N=1.10
+ CJO=370p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.87f RS=79.5 N=3.00 ).ENDS



*SRC=AZ23C43;DI_AZ23C43;Diodes;Zener 10V-50V; 43.0V  0.300W   Diodes Inc. Per node.  Device contains two
*SYM=HZEN
.SUBCKT DI_AZ23C43  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 40.3
.MODEL DF D ( IS=2.87p RS=27.4 N=1.10
+ CJO=16.7p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.75e-016 RS=84.5 N=3.00 ).ENDS



*SRC=AZ23C47;DI_AZ23C47;Diodes;Zener 10V-50V; 47.0V  0.300W   Diodes Inc. Per node.  Device contains two
*SYM=HZEN
.SUBCKT DI_AZ23C47  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 44.3
.MODEL DF D ( IS=2.63p RS=27.2 N=1.10
+ CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.26e-016 RS=84.5 N=3.00 ).ENDS



*SRC=AZ23C4V3;DI_AZ23C4V3;Diodes;Zener <=10V; 4.30V  0.300W   Diodes Inc. Per node.  Device contains two
*SYM=HZEN
.SUBCKT DI_AZ23C4V3  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.77
.MODEL DF D ( IS=28.7p RS=34.0 N=1.10
+ CJO=357p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.75f RS=79.5 N=3.00 ).ENDS



*SRC=AZ23C4V7;DI_AZ23C4V7;Diodes;Zener <=10V; 4.70V  0.300W   Diodes Inc. Per node.  Device contains two
*SYM=HZEN
.SUBCKT DI_AZ23C4V7  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.24
.MODEL DF D ( IS=26.3p RS=33.7 N=1.10
+ CJO=350p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.26f RS=62.5 N=3.00 ).ENDS



*SRC=AZ23C51;DI_AZ23C51;Diodes;Zener >50V; 51.0V  0.300W   Diodes Inc. Per node.  Device contains two
*SYM=HZEN
.SUBCKT DI_AZ23C51  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 48.2
.MODEL DF D ( IS=2.42p RS=26.9 N=1.10
+ CJO=16.2p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.85e-016 RS=84.5 N=3.00 ).ENDS



*SRC=AZ23C5V1;DI_AZ23C5V1;Diodes;Zener <=10V; 5.10V  0.300W   Diodes Inc. Per node.  Device contains two
*SYM=HZEN
.SUBCKT DI_AZ23C5V1  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.73
.MODEL DF D ( IS=24.2p RS=33.5 N=1.10
+ CJO=132p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.85f RS=44.5 N=3.00 ).ENDS



*SRC=AZ23C5V6;DI_AZ23C5V6;Diodes;Zener <=10V; 5.60V  0.300W   Diodes Inc. Per node.  Device contains two
*SYM=HZEN
*VERSION=2
.SUBCKT DI_AZ23C5V6  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 3.32
.MODEL DF D ( IS=22.1p RS=33.2 N=1.10 CJO=102p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.41f RS=24.5 N=3.00 )
.ENDS



*SRC=AZ23C5V6W;DI_AZ23C5V6W;Diodes;Zener <=10V; 5.60V  0.200W   Diodes Inc. Per node.  Device contains two
*SYM=HZEN
.SUBCKT DI_AZ23C5V6W  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 3.29
.MODEL DF D ( IS=14.7p RS=32.1 N=1.10
+ CJO=102p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.94f RS=24.5 N=3.00 ).ENDS



*SRC=AZ23C6V2;DI_AZ23C6V2;Diodes;Zener <=10V; 6.20V  0.300W   Diodes Inc. Per node.  Device contains two
*SYM=HZEN
.SUBCKT DI_AZ23C6V2  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.12
.MODEL DF D ( IS=19.9p RS=32.9 N=1.10
+ CJO=79.4p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.99f RS=2.30 N=1.49 ).ENDS



*SRC=AZ23C6V8;DI_AZ23C6V8;Diodes;Zener <=10V; 6.80V  0.300W   Diodes Inc. Per node.  Device contains two
*SYM=HZEN
.SUBCKT DI_AZ23C6V8  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.93
.MODEL DF D ( IS=18.2p RS=32.7 N=1.10
+ CJO=72.7p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.64f RS=1.84 N=1.19 ).ENDS



*SRC=AZ23C6V8W;DI_AZ23C6V8W;Diodes;Zener <=10V; 6.80V  0.200W   Diodes Inc. Per node.  Device contains two
*SYM=HZEN
.SUBCKT DI_AZ23C6V8W  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.15
.MODEL DF D ( IS=12.1p RS=31.5 N=1.10
+ CJO=72.7p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.42f RS=3.45 N=2.23 ).ENDS



*SRC=AZ23C7V5;DI_AZ23C7V5;Diodes;Zener <=10V; 7.50V  0.300W   Diodes Inc. Per node.  Device contains two
*SYM=HZEN
.SUBCKT DI_AZ23C7V5  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 6.74
.MODEL DF D ( IS=16.5p RS=32.4 N=1.10
+ CJO=59.5p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.30f RS=1.61 N=1.04 ).ENDS



*SRC=AZ23C8V2;DI_AZ23C8V2;Diodes;Zener <=10V; 8.20V  0.300W   Diodes Inc. Per node.  Device contains two
*SYM=HZEN
.SUBCKT DI_AZ23C8V2  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 7.43
.MODEL DF D ( IS=15.1p RS=32.1 N=1.10
+ CJO=54.2p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.01f RS=1.61 N=1.04 ).ENDS



*SRC=AZ23C9V1;DI_AZ23C9V1;Diodes;Zener <=10V; 9.10V  0.300W   Diodes Inc. Per node.  Device contains two
*SYM=HZEN
.SUBCKT DI_AZ23C9V1  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 8.00
.MODEL DF D ( IS=13.6p RS=31.8 N=1.10
+ CJO=48.9p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.72f RS=2.30 N=1.49 ).ENDS



*SRC=BZT52C10;DI_BZT52C10;Diodes;Zener <=10V; 10.0V  0.500W   Diodes Inc. Zener 
*SYM=HZEN 
.SUBCKT DI_BZT52C10  1 2 
*        Terminals    A   K 
D1 1 2 DF 
DZ 3 1 DR 
VZ 2 3 7.84 
.MODEL DF D ( IS=20.6p RS=1.22 N=1.10 
+ CJO=45.6p VJ=0.750 M=0.330 TT=50.1n ) 
.MODEL DR D ( IS=4.12f RS=4.60 N=2.97 ) 
.ENDS


*SRC=BZT52C9V1LP;DI_BZT52C9V1LP;Diodes;Zener <=10V; 9.10V  0.250W   Diodes Inc. QFN Zener
*SYM=HZEN
.SUBCKT DI_BZT52C9V1LP  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 7.44
.MODEL DF D ( IS=11.3p RS=31.3 N=1.10
+ CJO=50.3p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.26f RS=3.45 N=2.23 )
.ENDS


*SRC=BZT52C10S;DI_BZT52C10S;Diodes;Zener <=10V; 10.0V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZT52C10S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 7.76
.MODEL DF D ( IS=8.24p RS=30.4 N=1.10
+ CJO=47.6p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.65f RS=4.60 N=2.97 ).ENDS



*SRC=BZT52C10T;DI_BZT52C10T;Diodes;Zener <=10V; 10.0V  0.500W   Diodes Inc. Zener 
*SYM=HZEN 
.SUBCKT DI_BZT52C10  1 2 
*        Terminals    A   K 
D1 1 2 DF 
DZ 3 1 DR 
VZ 2 3 7.84 
.MODEL DF D ( IS=20.6p RS=1.22 N=1.10 
+ CJO=45.6p VJ=0.750 M=0.330 TT=50.1n ) 
.MODEL DR D ( IS=4.12f RS=4.60 N=2.97 ) 
.ENDS


*SRC=BZT52C11;DI_BZT52C11;Diodes;Zener 10V-50V; 11.0V  0.500W   Diodes Inc.
-
*SYM=HZEN
.SUBCKT DI_BZT52C11  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 8.83
.MODEL DF D ( IS=18.7p RS=32.7 N=1.10
+ CJO=44.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.75f RS=4.60 N=2.97).ENDS



*SRC=BZT52C11LP;DI_BZT52C11LP;Diodes;Zener 10V-50V; 11.0V  0.250W   Diodes Inc. QFN Zener
*SYM=HZEN
.SUBCKT DI_BZT52C11LP  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 8.77
.MODEL DF D ( IS=9.36p RS=30.8 N=1.10
+ CJO=33.9p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.87f RS=4.60 N=2.97 )
.ENDS


*SRC=BZT52C11S;DI_BZT52C11S;Diodes;Zener 10V-50V; 11.0V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZT52C11S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 8.76
.MODEL DF D ( IS=7.49p RS=30.1 N=1.10
+ CJO=44.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.50f RS=4.60 N=2.97 ).ENDS



*SRC=BZT52C11T;DI_BZT52C11T;Diodes;Zener 10V-50V; 11.0V  0.500W   Diodes Inc.
-
*SYM=HZEN
.SUBCKT DI_BZT52C11  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 8.83
.MODEL DF D ( IS=18.7p RS=32.7 N=1.10
+ CJO=44.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.75f RS=4.60 N=2.97).ENDS



*SRC=BZT52C12;DI_BZT52C12;Diodes;Zener 10V-50V; 12.0V  0.500W   Diodes Inc.
-
*SYM=HZEN
.SUBCKT DI_BZT52C12  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 9.78
.MODEL DF D ( IS=17.2p RS=32.5 N=1.10
+ CJO=42.7p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.43f RS=9.46 N=3.00).ENDS



*SRC=BZT52C12LP;DI_BZT52C12LP;Diodes;Zener 10V-50V; 12.0V  0.250W   Diodes Inc. QFN Zener
*SYM=HZEN
.SUBCKT DI_BZT52C12LP  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 9.72
.MODEL DF D ( IS=8.58p RS=30.5 N=1.10
+ CJO=31.4p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.72f RS=9.46 N=3.00 )
.ENDS


*SRC=BZT52C12S;DI_BZT52C12S;Diodes;Zener 10V-50V; 12.0V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZT52C12S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 9.71
.MODEL DF D ( IS=6.87p RS=29.9 N=1.10
+ CJO=42.7p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.37f RS=9.46 N=3.00 ).ENDS



*SRC=BZT52C12T;DI_BZT52C12T;Diodes;Zener 10V-50V; 12.0V  0.500W   Diodes Inc.
-
*SYM=HZEN
.SUBCKT DI_BZT52C12  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 9.78
.MODEL DF D ( IS=17.2p RS=32.5 N=1.10
+ CJO=42.7p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.43f RS=9.46 N=3.00).ENDS



*SRC=BZT52C13;DI_BZT52C13;Diodes;Zener 10V-50V; 13.0V  0.500W   Diodes Inc. Zener 
*SYM=HZEN 
.SUBCKT DI_BZT52C13  1 2 
*        Terminals    A   K 
D1 1 2 DF 
DZ 3 1 DR 
VZ 2 3 12.4 
.MODEL DF D ( IS=15.8p RS=1.24 N=1.10 
+ CJO=51.5p VJ=1.00 M=0.330 TT=50.1n ) 
.MODEL DR D ( IS=3.17f RS=1.26 N=0.814 ) 
.ENDS


*SRC=BZT52C13LP;DI_BZT52C13LP;Diodes;Zener 10V-50V; 13.0V  0.250W   Diodes Inc. QFN Zener
*SYM=HZEN
.SUBCKT DI_BZT52C13LP  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 10.7
.MODEL DF D ( IS=7.92p RS=30.3 N=1.10
+ CJO=26.4p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.58f RS=14.5 N=3.00 )
.ENDS


*SRC=BZT52C13T;DI_BZT52C13T;Diodes;Zener 10V-50V; 13.0V  0.500W   Diodes Inc. Zener 
*SYM=HZEN 
.SUBCKT DI_BZT52C13  1 2 
*        Terminals    A   K 
D1 1 2 DF 
DZ 3 1 DR 
VZ 2 3 12.4 
.MODEL DF D ( IS=15.8p RS=1.24 N=1.10 
+ CJO=51.5p VJ=1.00 M=0.330 TT=50.1n ) 
.MODEL DR D ( IS=3.17f RS=1.26 N=0.814 ) 
.ENDS


*SRC=BZT52C15;DI_BZT52C15;Diodes;Zener 10V-50V; 15.0V  0.500W   Diodes Inc.
-
*SYM=HZEN
.SUBCKT DI_BZT52C15  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 12.7
.MODEL DF D ( IS=13.7p RS=31.9 N=1.10
+ CJO=32.7p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.75f RS=14.5 N=3.00).ENDS



*SRC=BZT52C15LP;DI_BZT52C15LP;Diodes;Zener 10V-50V; 15.0V  0.250W   Diodes Inc. QFN Zener
*SYM=HZEN
.SUBCKT DI_BZT52C15LP  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 12.7
.MODEL DF D ( IS=6.87p RS=29.9 N=1.10
+ CJO=25.5p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.37f RS=14.5 N=3.00 )
.ENDS


*SRC=BZT52C15S;DI_BZT52C15S;Diodes;Zener 10V-50V; 15.0V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZT52C15S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 12.7
.MODEL DF D ( IS=5.49p RS=29.3 N=1.10
+ CJO=25.5p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.10f RS=14.5 N=3.00 ).ENDS



*SRC=BZT52C15T;DI_BZT52C15T;Diodes;Zener 10V-50V; 15.0V  0.500W   Diodes Inc.
-
*SYM=HZEN
.SUBCKT DI_BZT52C15  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 12.7
.MODEL DF D ( IS=13.7p RS=31.9 N=1.10
+ CJO=32.7p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.75f RS=14.5 N=3.00).ENDS



*SRC=BZT52C16;DI_BZT52C16;Diodes;Zener 10V-50V; 16.0V  0.500W   Diodes Inc.
-
*SYM=HZEN
.SUBCKT DI_BZT52C16  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 13.7
.MODEL DF D ( IS=12.9p RS=31.7 N=1.10
+ CJO=31.4p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.58f RS=24.5 N=3.00).ENDS



*SRC=BZT52C16LP;DI_BZT52C16LP;Diodes;Zener 10V-50V; 16.0V  0.250W   Diodes Inc. QFN Zener
*SYM=HZEN
.SUBCKT DI_BZT52C16LP  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 13.6
.MODEL DF D ( IS=6.44p RS=29.7 N=1.10
+ CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.29f RS=24.5 N=3.00 )
.ENDS


*SRC=BZT52C16S;DI_BZT52C16S;Diodes;Zener 10V-50V; 16.0V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZT52C16S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 13.6
.MODEL DF D ( IS=5.15p RS=29.1 N=1.10
+ CJO=25.4p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.03f RS=24.5 N=3.00 ).ENDS



*SRC=BZT52C16T;DI_BZT52C16T;Diodes;Zener 10V-50V; 16.0V  0.500W   Diodes Inc.
-
*SYM=HZEN
.SUBCKT DI_BZT52C16  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 13.7
.MODEL DF D ( IS=12.9p RS=31.7 N=1.10
+ CJO=31.4p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.58f RS=24.5 N=3.00).ENDS



*SRC=BZT52C18;DI_BZT52C18;Diodes;Zener 10V-50V; 18.0V  0.500W   Diodes Inc.
-
*SYM=HZEN
.SUBCKT DI_BZT52C18  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 15.6
.MODEL DF D ( IS=11.4p RS=31.3 N=1.10
+ CJO=27.7p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.29f RS=29.5 N=3.00).ENDS



*SRC=BZT52C18LP;DI_BZT52C18LP;Diodes;Zener 10V-50V; 18.0V  0.250W   Diodes Inc. QFN Zener
*SYM=HZEN
.SUBCKT DI_BZT52C18LP  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 15.6
.MODEL DF D ( IS=5.72p RS=29.4 N=1.10
+ CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.14f RS=29.5 N=3.00 )
.ENDS


**********************************************************************************************************************************
*SRC=BZT52C18S;DI_BZT52C18S;Diodes;Zener 10V-50V; 18.0V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZT52C18S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 15.6
.MODEL DF D ( IS=4.58p RS=28.7 N=1.10
+ CJO=25.3p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=9.16e-016 RS=29.5 N=3.00 )
.ENDS
*********************************************************************************************************************************


*SRC=BZT52C18T;DI_BZT52C18T;Diodes;Zener 10V-50V; 18.0V  0.500W   Diodes Inc.
-
*SYM=HZEN
.SUBCKT DI_BZT52C18  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 15.6
.MODEL DF D ( IS=11.4p RS=31.3 N=1.10
+ CJO=27.7p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.29f RS=29.5 N=3.00).ENDS



*SRC=BZT52C20;DI_BZT52C20;Diodes;Zener 10V-50V; 20.0V  0.500W   Diodes Inc.
-
*SYM=HZEN
.SUBCKT DI_BZT52C20  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 17.6
.MODEL DF D ( IS=10.3p RS=31.0 N=1.10
+ CJO=23.9p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.06f RS=39.5 N=3.00).ENDS



*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=1/04/2014
*VERSION=1


.model BZT52C20LP D(IS=.0002n RS=0.01 CJO=1000p M=0.5 VJ=0.4 N=1.2 IKF=30m ISR=.0002u BV=20 IBV=10u TT=40n EG=1.2 TRS1=.01m)


.ENDS
*         (c)  2014 Diodes Inc
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*

.SIMULATOR DEFAULT



*SRC=BZT52C20S;DI_BZT52C20S;Diodes;Zener 10V-50V; 20.0V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZT52C20S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 17.5
.MODEL DF D ( IS=4.12p RS=28.4 N=1.10
+ CJO=23.9p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.24e-016 RS=39.5 N=3.00 ).ENDS



*SRC=BZT52C20T;DI_BZT52C20T;Diodes;Zener 10V-50V; 20.0V  0.500W   Diodes Inc.
-
*SYM=HZEN
.SUBCKT DI_BZT52C20  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 17.6
.MODEL DF D ( IS=10.3p RS=31.0 N=1.10
+ CJO=23.9p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.06f RS=39.5 N=3.00).ENDS



*SRC=BZT52C22;DI_BZT52C22;Diodes;Zener 10V-50V; 22.0V  0.500W   Diodes Inc.
-
*SYM=HZEN
.SUBCKT DI_BZT52C22  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 19.6
.MODEL DF D ( IS=9.36p RS=30.8 N=1.10
+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.87f RS=39.5 N=3.00).ENDS



*SRC=BZT52C22LP;DI_BZT52C22LP;Diodes;Zener 10V-50V; 22.0V  0.250W   Diodes Inc. QFN Zener
*SYM=HZEN
.SUBCKT DI_BZT52C22LP  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 19.5
.MODEL DF D ( IS=4.68p RS=28.8 N=1.10
+ CJO=20.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=9.36e-016 RS=39.5 N=3.00 )
.ENDS


*SRC=BZT52C22S;DI_BZT52C22S;Diodes;Zener 10V-50V; 22.0V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZT52C22S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 19.5
.MODEL DF D ( IS=3.75p RS=28.2 N=1.10
+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=7.49e-016 RS=39.5 N=3.00 ).ENDS



*SRC=BZT52C24LP;DI_BZT52C24LP;Diodes;Zener 10V-50V; 24.0V  0.250W   Diodes Inc. QFN Zener
*SYM=HZEN
.SUBCKT DI_BZT52C24LP  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 21.4
.MODEL DF D ( IS=4.29p RS=28.5 N=1.10
+ CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.58e-016 RS=54.5 N=3.00 )
.ENDS


*SRC=BZT52C24S;DI_BZT52C24S;Diodes;Zener 10V-50V; 24.0V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZT52C24S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 21.4
.MODEL DF D ( IS=3.43p RS=27.9 N=1.10
+ CJO=21.4p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.87e-016 RS=54.5 N=3.00 ).ENDS



*SRC=BZT52C24T;DI_BZT52C24T;Diodes;Zener 10V-50V; 24.0V  0.500W   Diodes Inc.
-
*SYM=HZEN
.SUBCKT DI_BZT52C24  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 21.5
.MODEL DF D ( IS=8.58p RS=30.5 N=1.10
+ CJO=21.4p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.72f RS=54.5 N=3.00).ENDS



*SRC=BZT52C27;DI_BZT52C27;Diodes;Zener 10V-50V; 27.0V  0.500W   Diodes Inc.
-
*SYM=HZEN
.SUBCKT DI_BZT52C27  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 24.7
.MODEL DF D ( IS=7.63p RS=30.2 N=1.10
+ CJO=20.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.53f RS=41.1 N=3.00).ENDS



*SRC=BZT52C27S;DI_BZT52C27S;Diodes;Zener 10V-50V; 27.0V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZT52C27S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 24.7
.MODEL DF D ( IS=3.05p RS=27.6 N=1.10
+ CJO=20.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.10e-016 RS=41.1 N=3.00 ).ENDS



*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=16/04/2014
*VERSION=1

*Comments:zener break down is modelled only at 25°c


.SUBCKT BZT52C2V0 1 2 
D1 1 2 DF
D2 2 1 DR
.model DF D(IS=.00015n RS=0.055 CJO=500p M=0.5 VJ=0.4 N=1.1 IKF=200m TT=40n EG=1.05 TRS1=.01m)
.model DR D(IS=.6n RS=15 N=3 IKF=.72u T_ABS=25)
.ENDS


*         (c)  2014 Diodes Inc
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*

.SIMULATOR DEFAULT


*SRC=BZT52C2V0S;DI_BZT52C2V0S;Diodes;Zener <=10V; 2.00V  0.200W   Diodes Inc. 200 mW Zener
*SYM=HZEN
.SUBCKT DI_BZT52C2V0S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0
.MODEL DF D ( IS=41.2p RS=35.0 N=1.10
+ CJO=503p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.24f RS=84.5 N=3.00 ).ENDS



*SRC=BZT52C2V0T;DI_BZT52C2V0T;Diodes;Zener <=10V; 2.00V  0.15W   Diodes Inc.
*SYM=HZEN
.SUBCKT DI_BZT52C2V0T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0
.MODEL DF D ( IS=103p RS=37.6 N=1.10
+ CJO=516p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=20.6f RS=84.5 N=3.00).ENDS



*SRC=BZT52C2V4;DI_BZT52C2V4;Diodes;Zener <=10V; 2.40V  0.500W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_BZT52C2V4  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0
.MODEL DF D ( IS=85.8p RS=37.1 N=1.10
+ CJO=461p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=17.2f RS=84.5 N=3.00 )
.ENDS


*SRC=BZT52C2V4LP;BZT52C2V4LP;Diodes;Zener <=10V; 2.40V  0.250W   DIODES ZENER DIODE
*SYM=HZEN
.SUBCKT BZT52C2V4LP  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0
.MODEL DF D ( IS=42.9p RS=35.1 N=1.10
+ CJO=159p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.58f RS=84.5 N=3.00 )
.ENDS


*SRC=BZT52C2V4S;DI_BZT52C2V4S;Diodes;Zener <=10V; 2.40V  0.200W   Diodes Inc. 200 mW Zener
*SYM=HZEN
.SUBCKT DI_BZT52C2V4S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0
.MODEL DF D ( IS=34.3p RS=34.5 N=1.10
+ CJO=460p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.87f RS=84.5 N=3.00 ).ENDS



*SRC=BZT52C2V4T;DI_BZT52C2V4T;Diodes;Zener <=10V; 2.40V  0.15W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_BZT52C2V4T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0
.MODEL DF D ( IS=85.8p RS=37.1 N=1.10
+ CJO=461p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=17.2f RS=84.5 N=3.00 )
.ENDS


*SRC=BZT52C2V7;DI_BZT52C2V7;Diodes;Zener <=10V; 2.70V  0.500W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_BZT52C2V7  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.217
.MODEL DF D ( IS=76.3p RS=36.7 N=1.10
+ CJO=461p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=15.3f RS=84.5 N=3.00 )
.ENDS


*SRC=BZT52C2V7LP;BZT52C2V7LP;Diodes;Zener <=10V; 2.70V  0.250W   DIODES ZENER DIODE
*SYM=HZEN
.SUBCKT BZT52C2V7LP  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.164
.MODEL DF D ( IS=38.1p RS=34.8 N=1.10
+ CJO=152p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=7.63f RS=84.5 N=3.00 )
.ENDS


*SRC=BZT52C2V7S;DI_BZT52C2V7S;Diodes;Zener <=10V; 2.70V  0.200W   Diodes Inc. 200 mW Zener
*SYM=HZEN
.SUBCKT DI_BZT52C2V7S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.146
.MODEL DF D ( IS=30.5p RS=34.1 N=1.10
+ CJO=410p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.10f RS=84.5 N=3.00 ).ENDS



*SRC=BZT52C2V7T;DI_BZT52C2V7T;Diodes;Zener <=10V; 2.70V  0.15W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_BZT52C2V7T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.217
.MODEL DF D ( IS=76.3p RS=36.7 N=1.10
+ CJO=461p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=15.3f RS=84.5 N=3.00 )
.ENDS


*SRC=BZT52C30;DI_BZT52C30;Diodes;Zener 10V-50V; 30.0V  0.500W   Diodes Inc.
-
*SYM=HZEN
.SUBCKT DI_BZT52C30  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 27.7
.MODEL DF D ( IS=6.87p RS=29.9 N=1.10
+ CJO=18.9p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.37f RS=41.1 N=3.00).ENDS



*SRC=BZT52C30S;DI_BZT52C30S;Diodes;Zener 10V-50V; 30.0V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZT52C30S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 27.7
.MODEL DF D ( IS=2.75p RS=27.3 N=1.10
+ CJO=18.9p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.49e-016 RS=41.1 N=3.00 ).ENDS



*SRC=BZT52C33;DI_BZT52C33;Diodes;Zener 10V-50V; 33.0V  0.500W   Diodes Inc.
-
*SYM=HZEN
.SUBCKT DI_BZT52C33  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 30.7
.MODEL DF D ( IS=6.24p RS=29.6 N=1.10
+ CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.25f RS=41.1 N=3.00).ENDS



*SRC=BZT52C33S;DI_BZT52C33S;Diodes;Zener 10V-50V; 33.0V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZT52C33S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 30.7
.MODEL DF D ( IS=2.50p RS=27.0 N=1.10
+ CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.99e-016 RS=41.1 N=3.00 ).ENDS



*SRC=BZT52C36;DI_BZT52C36;Diodes;Zener 10V-50V; 36.0V  0.500W   Diodes Inc. Zener 
*SYM=HZEN 
.SUBCKT DI_BZT52C36  1 2 
*        Terminals    A   K 
D1 1 2 DF 
DZ 3 1 DR 
VZ 2 3 33.7 
.MODEL DF D ( IS=5.72p RS=1.27 N=1.10 
+ CJO=18.9p VJ=1.00 M=0.330 TT=50.1n ) 
.MODEL DR D ( IS=1.14f RS=51.1 N=3.00 ) 
.ENDS


*SRC=BZT52C36LP;BZT52C36LP;Diodes;Zener 10V-50V; 36.0V  0.250W   DIODES ZENER DIODE
*SYM=HZEN
.SUBCKT BZT52C36LP  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 33.7
.MODEL DF D ( IS=2.86p RS=27.4 N=1.10
+ CJO=23.9p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.72e-016 RS=51.1 N=3.00 )
.ENDS


*SRC=BZT52C36S;DI_BZT52C36S;Diodes;Zener 10V-50V; 36.0V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZT52C36S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 33.7
.MODEL DF D ( IS=2.29p RS=26.8 N=1.10
+ CJO=17.3p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.58e-016 RS=41.1 N=3.00 ).ENDS



*SRC=BZT52C39;DI_BZT52C39;Diodes;Zener 10V-50V; 39.0V  0.500W   Diodes Inc. 
*SYM=HZEN 
.SUBCKT DI_BZT52C39  1 2 
*        Terminals    A   K 
D1 1 2 DF 
DZ 3 1 DR 
VZ 2 3 36.6 
.MODEL DF D ( IS=5.28p RS=29.1 N=1.10 
+ CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) 
.MODEL DR D ( IS=1.06f RS=91.1 N=3.00  )                                               
.ENDS


*SRC=BZT52C39LP;BZT52C39LP;Diodes;Zener 10V-50V; 39.0V  0.250W   DIODES ZENER DIODE
*SYM=HZEN
.SUBCKT BZT52C39LP  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 36.6
.MODEL DF D ( IS=2.64p RS=27.2 N=1.10
+ CJO=24.9p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.28e-016 RS=91.1 N=3.00 )
.ENDS


*SRC=BZT52C39S;DI_BZT52C39S;Diodes;Zener 10V-50V; 39.0V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZT52C39S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 36.5
.MODEL DF D ( IS=2.11p RS=26.5 N=1.10
+ CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.23e-016 RS=91.1 N=3.00 ).ENDS



*SRC=BZT52C3V0;DI_BZT52C3V0;Diodes;Zener <=10V; 3.00V  0.500W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_BZT52C3V0  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.534
.MODEL DF D ( IS=68.7p RS=36.4 N=1.10
+ CJO=384p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=13.7f RS=79.5 N=3.00 )
.ENDS


*SRC=BZT52C3V0LP;BZT52C3V0LP;Diodes;Zener <=10V; 3.00V  0.250W   DIODES ZENER DIODE
*SYM=HZEN
.SUBCKT BZT52C3V0LP  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.480
.MODEL DF D ( IS=34.3p RS=34.5 N=1.10
+ CJO=144p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.87f RS=79.5 N=3.00 )
.ENDS


*SRC=BZT52C3V0S;DI_BZT52C3V0S;Diodes;Zener <=10V; 3.00V  0.200W   Diodes Inc. 200 mW Zener
*SYM=HZEN
.SUBCKT DI_BZT52C3V0S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.463
.MODEL DF D ( IS=27.5p RS=33.8 N=1.10
+ CJO=403p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.49f RS=79.5 N=3.00 ).ENDS



*SRC=BZT52C3V0T;DI_BZT52C3V0T;Diodes;Zener <=10V; 3.00V  0.15W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_BZT52C3V0T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.534
.MODEL DF D ( IS=68.7p RS=36.4 N=1.10
+ CJO=384p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=13.7f RS=79.5 N=3.00 )
.ENDS


*SRC=BZT52C3V3;DI_BZT52C3V3;Diodes;Zener <=10V; 3.30V  0.500W   Diodes Inc.
-
*SYM=HZEN
.SUBCKT DI_BZT52C3V3  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.827
.MODEL DF D ( IS=62.4p RS=36.2 N=1.10
+ CJO=403p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=12.5f RS=79.5 N=3.00).ENDS



*SRC=BZT52C3V3LP;BZT52C3V3LP;Diodes;Zener <=10V; 3.30V  0.250W   DIODES ZENER DIODE
*SYM=HZEN
.SUBCKT BZT52C3V3LP  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.773
.MODEL DF D ( IS=31.2p RS=34.2 N=1.10
+ CJO=136p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.24f RS=79.5 N=3.00 )
.ENDS


*SRC=BZT52C3V3S;DI_BZT52C3V3S;Diodes;Zener <=10V; 3.30V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZT52C3V3S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.756
.MODEL DF D ( IS=25.0p RS=33.6 N=1.10
+ CJO=403p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.99f RS=79.5 N=3.00 ).ENDS



*SRC=BZT52C3V3T;DI_BZT52C3V3T;Diodes;Zener <=10V; 3.30V  0.15W   Diodes Inc.
-
*SYM=HZEN
.SUBCKT DI_BZT52C3V3T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.827
.MODEL DF D ( IS=62.4p RS=36.2 N=1.10
+ CJO=403p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=12.5f RS=79.5 N=3.00).ENDS



*SRC=BZT52C3V6;DI_BZT52C3V6;Diodes;Zener <=10V; 3.60V  0.500W   Diodes Inc.
-
*SYM=HZEN
.SUBCKT DI_BZT52C3V6  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.15
.MODEL DF D ( IS=57.2p RS=35.9 N=1.10
+ CJO=390p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=11.4f RS=74.5 N=3.00).ENDS



*SRC=BZT52C3V6LP;BZT52C3V6LP;Diodes;Zener <=10V; 3.60V  0.250W   DIODES ZENER DIODE
*SYM=HZEN
.SUBCKT BZT52C3V6LP  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.09
.MODEL DF D ( IS=28.6p RS=34.0 N=1.10
+ CJO=130p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.72f RS=74.5 N=3.00 )
.ENDS


*SRC=BZT52C3V6S;DI_BZT52C3V6S;Diodes;Zener <=10V; 3.60V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZT52C3V6S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.07
.MODEL DF D ( IS=22.9p RS=33.3 N=1.10
+ CJO=390p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.58f RS=74.5 N=3.00 ).ENDS



*SRC=BZT52C3V6T;DI_BZT52C3V6T;Diodes;Zener <=10V; 3.60V  0.15W   Diodes Inc.
-
*SYM=HZEN
.SUBCKT DI_BZT52C3V6T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.15
.MODEL DF D ( IS=57.2p RS=35.9 N=1.10
+ CJO=390p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=11.4f RS=74.5 N=3.00).ENDS



*SRC=BZT52C3V9;DI_BZT52C3V9;Diodes;Zener <=10V; 3.90V  0.500W   Diodes Inc.
-
*SYM=HZEN
.SUBCKT DI_BZT52C3V9  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.44
.MODEL DF D ( IS=52.8p RS=35.7 N=1.10
+ CJO=384p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=10.6f RS=74.5 N=3.00).ENDS



*SRC=BZT52C3V9LP;BZT52C3V9LP;Diodes;Zener <=10V; 3.90V  0.250W   DIODES ZENER DIODE
*SYM=HZEN
.SUBCKT BZT52C3V9LP  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.39
.MODEL DF D ( IS=26.4p RS=33.7 N=1.10
+ CJO=122p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.28f RS=74.5 N=3.00 )
.END


********************************************************************************************************************************
*SRC=BZT52C3V9S;DI_BZT52C3V9S;Diodes;Zener <=10V; 3.90V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZT52C3V9S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.37
.MODEL DF D ( IS=21.1p RS=33.1 N=1.10
+ CJO=384p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.23f RS=74.5 N=3.00 )
.ENDS
********************************************************************************************************************************


*SRC=BZT52C3V9T;DI_BZT52C3V9T;Diodes;Zener <=10V; 3.90V  0.15W   Diodes Inc.
-
*SYM=HZEN
.SUBCKT DI_BZT52C3V9T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.44
.MODEL DF D ( IS=52.8p RS=35.7 N=1.10
+ CJO=384p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=10.6f RS=74.5 N=3.00).ENDS



*SRC=BZT52C43;DI_BZT52C43;Diodes;Zener 10V-50V; 43.0V  0.410W   Diodes Inc. Zener 
*SYM=HZEN 
.SUBCKT DI_BZT52C43  1 2 
*        Terminals    A   K 
D1 1 2 DF 
DZ 3 1 DR 
VZ 2 3 40.3 
.MODEL DF D ( IS=3.93p RS=1.51 N=1.10 
+ CJO=24.1p VJ=1.00 M=0.330 TT=50.1n ) 
.MODEL DR D ( IS=7.86e-016 RS=84.5 N=3.00 ) 
.ENDS


*SRC=BZT52C47;DI_BZT52C47;Diodes;Zener 10V-50V; 47.0V  0.410W   Diodes Inc. Zener 
*SYM=HZEN 
.SUBCKT DI_BZT52C47  1 2 
*        Terminals    A   K 
D1 1 2 DF 
DZ 3 1 DR 
VZ 2 3 44.3 
.MODEL DF D ( IS=3.59p RS=1.48 N=1.10 
+ CJO=24.1p VJ=1.00 M=0.330 TT=50.1n ) 
.MODEL DR D ( IS=7.19e-016 RS=84.5 N=3.00 ) 
.ENDS


*SRC=BZT52C4V3;DI_BZT52C4V3;Diodes;Zener <=10V; 4.30V  0.500W   Diodes Inc.
-
*SYM=HZEN
.SUBCKT DI_BZT52C4V3  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.83
.MODEL DF D ( IS=47.9p RS=35.4 N=1.10
+ CJO=370p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=9.58f RS=74.5 N=3.00).ENDS



*SRC=BZT52C4V3LP;BZT52C4V3LP;Diodes;Zener <=10V; 4.30V  0.250W   DIODES ZENER DIODE
*SYM=HZEN
.SUBCKT BZT52C4V3LP  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.78
.MODEL DF D ( IS=24.0p RS=33.4 N=1.10
+ CJO=111p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.79f RS=74.5 N=3.00 )
.ENDS


*SRC=BZT52C5V1T;DI_BZT52C5V1T;Diodes;Zener <=10V; 5.10V  0.15W   Diodes Inc.
-
*SYM=HZEN
.SUBCKT DI_BZT52C5V1T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.77
.MODEL DF D ( IS=40.4p RS=34.9 N=1.10
+ CJO=145p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.08f RS=44.5 N=3.00).ENDS



*SRC=BZT52C5V6;DI_BZT52C5V6;Diodes;Zener <=10V; 5.60V  0.500W   Diodes Inc.
-
*SYM=HZEN
.SUBCKT DI_BZT52C5V6  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 3.36
.MODEL DF D ( IS=36.8p RS=34.7 N=1.10
+ CJO=99.2p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=7.36f RS=24.5 N=3.00).ENDS



*SRC=BZT52C5V6LP;DI_BZT52C5V6LP;Diodes;Zener <=10V; 5.60V  0.250W   Diodes Inc. QFN Zener
*SYM=HZEN
.SUBCKT DI_BZT52C5V6LP  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 3.31
.MODEL DF D ( IS=18.4p RS=32.7 N=1.10
+ CJO=106p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.68f RS=24.5 N=3.00 )
.ENDS


*SRC=BZT52C6V8LP;DI_BZT52C6V8LP;Diodes;Zener <=10V; 6.80V  0.250W   Diodes Inc. QFN Zener
*SYM=HZEN
.SUBCKT DI_BZT52C6V8LP  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.16
.MODEL DF D ( IS=15.1p RS=32.1 N=1.10
+ CJO=66.1p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.03f RS=3.45 N=2.23 )
.ENDS


*SRC=BZT52C7V5LP;DI_BZT52C7V5LP;Diodes;Zener <=10V; 7.50V  0.250W   Diodes Inc. QFN Zener
*SYM=HZEN
.SUBCKT DI_BZT52C7V5LP  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.85
.MODEL DF D ( IS=13.7p RS=31.9 N=1.10
+ CJO=55.5p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.75f RS=3.45 N=2.23 )
.ENDS


*SRC=BZT52C8V2;DI_BZT52C8V2;Diodes;Zener <=10V; 8.20V  0.500W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_BZT52C8V2  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 6.59
.MODEL DF D ( IS=25.1p RS=33.6 N=1.10
+ CJO=38.4p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.02f RS=3.45 N=2.23 )
.ENDS


*SRC=BZT52C8V2LP;DI_BZT52C8V2LP;Diodes;Zener <=10V; 8.20V  0.250W   Diodes Inc. QFN Zener
*SYM=HZEN
.SUBCKT DI_BZT52C8V2LP  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 6.55
.MODEL DF D ( IS=12.6p RS=31.6 N=1.10
+ CJO=51.6p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.51f RS=3.45 N=2.23 )
.ENDS


*SRC=BZT52C8V2T;DI_BZT52C8V2T;Diodes;Zener <=10V; 8.20V  0.500W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_BZT52C8V2  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 6.59
.MODEL DF D ( IS=25.1p RS=33.6 N=1.10
+ CJO=38.4p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.02f RS=3.45 N=2.23 )
.ENDS


*SRC=BZT52C9V1;DI_BZT52C9V1;Diodes;Zener <=10V; 9.10V  0.500W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_BZT52C9V1  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 7.48
.MODEL DF D ( IS=22.6p RS=33.3 N=1.10
+ CJO=35.3p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.53f RS=3.45 N=2.23 )
.ENDS


*SRC=BZT52C9V1T;DI_BZT52C9V1T;Diodes;Zener <=10V; 9.10V  0.500W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_BZT52C9V1  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 7.48
.MODEL DF D ( IS=22.6p RS=33.3 N=1.10
+ CJO=35.3p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.53f RS=3.45 N=2.23 )
.ENDS


*SRC=BZX84C10;DI_BZX84C10;Diodes;Zener <=10V; 10.0V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_BZX84C10  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 7.81
.MODEL DF D ( IS=14.4p RS=32.0 N=1.10
+ CJO=24.1p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.88f RS=4.60 N=2.97 )
.ENDS


*SRC=BZX84C11;DI_BZX84C11;Diodes;Zener 10V-50V; 11.0V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_BZX84C11  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 8.80
.MODEL DF D ( IS=13.1p RS=31.7 N=1.10
+ CJO=45.2p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.62f RS=4.60 N=2.97 )
.ENDS


*SRC=BZX84C12;DI_BZX84C12;Diodes;Zener 10V-50V; 12.0V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_BZX84C12  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 9.75
.MODEL DF D ( IS=12.0p RS=31.5 N=1.10
+ CJO=42.7p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.40f RS=9.46 N=3.00 )
.ENDS


*SRC=BZX84C13;DI_BZX84C13;Diodes;Zener 10V-50V; 13.0V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_BZX84C13  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 10.7
.MODEL DF D ( IS=11.1p RS=31.3 N=1.10
+ CJO=40.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.22f RS=14.5 N=3.00 )
.ENDS


*SRC=BZX84C15;DI_BZX84C15;Diodes;Zener 10V-50V; 15.0V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_BZX84C15  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 12.7
.MODEL DF D ( IS=9.61p RS=30.8 N=1.10
+ CJO=37.2p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.92f RS=14.5 N=3.00 )
.ENDS


*SRC=BZX84C16;DI_BZX84C16;Diodes;Zener 10V-50V; 16.0V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_BZX84C16  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 13.7
.MODEL DF D ( IS=9.01p RS=30.7 N=1.10
+ CJO=35.8p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.80f RS=24.5 N=3.00 )
.ENDS


*SRC=BZX84C18;DI_BZX84C18;Diodes;Zener 10V-50V; 18.0V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_BZX84C18  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 15.6
.MODEL DF D ( IS=8.01p RS=30.3 N=1.10
+ CJO=33.5p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.60f RS=29.5 N=3.00 )
.ENDS


*SRC=BZX84C20;DI_BZX84C20;Diodes;Zener 10V-50V; 20.0V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_BZX84C20  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 17.6
.MODEL DF D ( IS=7.21p RS=30.0 N=1.10
+ CJO=31.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.44f RS=39.5 N=3.00 )
.ENDS


*SRC=BZX84C22;DI_BZX84C22;Diodes;Zener 10V-50V; 22.0V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_BZX84C22  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 19.6
.MODEL DF D ( IS=6.55p RS=29.8 N=1.10
+ CJO=30.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.31f RS=39.5 N=3.00 )
.ENDS


*SRC=BZX84C24;DI_BZX84C24;Diodes;Zener 10V-50V; 24.0V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_BZX84C24  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 21.5
.MODEL DF D ( IS=6.01p RS=29.5 N=1.10
+ CJO=28.9p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.20f RS=54.5 N=3.00 )
.ENDS


*SRC=BZX84C27;DI_BZX84C27;Diodes;Zener 10V-50V; 27.0V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_BZX84C27  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 24.4
.MODEL DF D ( IS=5.34p RS=29.2 N=1.10
+ CJO=27.3p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.07f RS=64.5 N=3.00 )
.ENDS


*SRC=BZX84C2V4;DI_BZX84C2V4;Diodes;Zener <=10V; 2.40V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_BZX84C2V4  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0
.MODEL DF D ( IS=60.1p RS=36.1 N=1.10
+ CJO=205p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=12.0f RS=84.5 N=3.00 )
.ENDS


*SRC=BZX84C2V7;DI_BZX84C2V7;Diodes;Zener <=10V; 2.70V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_BZX84C2V7  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.190
.MODEL DF D ( IS=53.4p RS=35.7 N=1.10
+ CJO=172p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=10.7f RS=84.5 N=3.00 )
.ENDS


*SRC=BZX84C30;DI_BZX84C30;Diodes;Zener 10V-50V; 30.0V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_BZX84C30  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 27.4
.MODEL DF D ( IS=4.81p RS=28.9 N=1.10
+ CJO=26.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=9.61e-016 RS=64.5 N=3.00 )
.ENDS


*SRC=BZX84C33;DI_BZX84C33;Diodes;Zener 10V-50V; 33.0V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_BZX84C33  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 30.4
.MODEL DF D ( IS=4.37p RS=28.6 N=1.10
+ CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.74e-016 RS=64.5 N=3.00 )
.ENDS


*SRC=BZX84C36;DI_BZX84C36;Diodes;Zener 10V-50V; 36.0V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_BZX84C36  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 33.3
.MODEL DF D ( IS=4.01p RS=28.4 N=1.10
+ CJO=24.2p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.01e-016 RS=74.5 N=3.00 )
.ENDS


*SRC=BZX84C39;DI_BZX84C39;Diodes;Zener 10V-50V; 39.0V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_BZX84C39  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 36.1
.MODEL DF D ( IS=3.70p RS=28.1 N=1.10
+ CJO=23.5p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=7.39e-016 RS=114 N=3.00 )
.ENDS


*SRC=BZX84C3V0;DI_BZX84C3V0;Diodes;Zener <=10V; 3.00V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_BZX84C3V0  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.507
.MODEL DF D ( IS=48.1p RS=35.4 N=1.10
+ CJO=147p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=9.61f RS=79.5 N=3.00 )
.ENDS


*SRC=BZX84C3V3;DI_BZX84C3V3;Diodes;Zener <=10V; 3.30V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_BZX84C3V3  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.799
.MODEL DF D ( IS=43.7p RS=35.2 N=1.10
+ CJO=127p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.74f RS=79.5 N=3.00 )
.ENDS


*SRC=BZX84C3V6;DI_BZX84C3V6;Diodes;Zener <=10V; 3.60V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_BZX84C3V6  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.12
.MODEL DF D ( IS=40.1p RS=34.9 N=1.10
+ CJO=112p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.01f RS=74.5 N=3.00 )
.ENDS


*SRC=BZX84C3V9;DI_BZX84C3V9;Diodes;Zener <=10V; 3.90V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_BZX84C3V9  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.41
.MODEL DF D ( IS=37.0p RS=34.7 N=1.10
+ CJO=99.1p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=7.39f RS=74.5 N=3.00 )
.ENDS


*SRC=BZX84C43;DI_BZX84C43;Diodes;Zener 10V-50V; 43.0V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_BZX84C43  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 40.0
.MODEL DF D ( IS=3.35p RS=27.8 N=1.10
+ CJO=22.7p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.71e-016 RS=134 N=3.00 )
.ENDS


*SRC=BZX84C47;DI_BZX84C47;Diodes;Zener 10V-50V; 47.0V  0.350W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_BZX84C47  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 43.9
.MODEL DF D ( IS=3.07p RS=27.6 N=1.10
+ CJO=22.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.14e-016 RS=154 N=3.00 )
.ENDS


*SRC=BZX84C4V3;DI_BZX84C4V3;Diodes;Zener <=10V; 4.30V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_BZX84C4V3  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.80
.MODEL DF D ( IS=33.5p RS=34.4 N=1.10
+ CJO=85.6p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.71f RS=74.5 N=3.00 )
.ENDS


*SRC=BZX84C4V7;DI_BZX84C4V7;Diodes;Zener <=10V; 4.70V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_BZX84C4V7  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.25
.MODEL DF D ( IS=30.7p RS=34.2 N=1.10
+ CJO=74.9p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.14f RS=64.5 N=3.00 )
.ENDS


*SRC=bzx84c51;DI_BZX84C51;Diodes;Zener >50V; 51.0V  0.350W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_BZX84C51  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 48.5
.MODEL DF D ( IS=2.83p RS=1.77 N=1.10
+ CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.65e-016 RS=141 N=3.00 )
.ENDS


*SRC=BZX84C5V1;DI_BZX84C5V1;Diodes;Zener <=10V; 5.10V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_BZX84C5V1  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.74
.MODEL DF D ( IS=28.3p RS=33.9 N=1.10
+ CJO=66.2p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.65f RS=44.5 N=3.00 )
.ENDS


*SRC=BZX84C5V6;DI_BZX84C5V6;Diodes;Zener <=10V; 5.60V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_BZX84C5V6  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 3.33
.MODEL DF D ( IS=25.7p RS=33.7 N=1.10
+ CJO=57.6p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.15f RS=24.5 N=3.00 )
.ENDS


*SRC=BZX84C6V2;DI_BZX84C6V2;Diodes;Zener <=10V; 6.20V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_BZX84C6V2  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.12
.MODEL DF D ( IS=23.3p RS=33.4 N=1.10
+ CJO=49.4p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.65f RS=2.30 N=1.49 )
.ENDS


*SRC=BZX84C6V8;DI_BZX84C6V8;Diodes;Zener <=10V; 6.80V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_BZX84C6V8  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.18
.MODEL DF D ( IS=21.2p RS=33.1 N=1.10
+ CJO=43.0p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.24f RS=3.45 N=2.23 )
.ENDS


*SRC=BZX84C7V5;DI_C;Diodes;Zener <=10V; 7.50V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_BZX84C7V5  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.87
.MODEL DF D ( IS=19.2p RS=32.8 N=1.10
+ CJO=37.1p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.85f RS=3.45 N=2.23 )
.ENDS


*SRC=BZX84C8V2;DI_BZX84C8V2;Diodes;Zener <=10V; 8.20V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_BZX84C8V2  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 6.57
.MODEL DF D ( IS=17.6p RS=32.6 N=1.10
+ CJO=32.5p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.52f RS=3.45 N=2.23 )
.ENDS


*SRC=BZX84C9V1;DI_BZX84C9V1;Diodes;Zener <=10V; 9.10V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_BZX84C9V1  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 7.46
.MODEL DF D ( IS=15.8p RS=32.3 N=1.10
+ CJO=27.8p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.17f RS=3.45 N=2.23 )
.ENDS


*SRC=DDZ10C;DI_DDZ10C;Diodes;Zener <=10V; 10.0V  0.500W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZ10C  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 7.65
.MODEL DF D ( IS=20.6p RS=33.0 N=1.10
+ CJO=39.7p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.12f RS=4.11 N=3.00 )
.ENDS


*SRC=DDZ10CS;DI_DDZ10CS;Diodes;Zener <=10V; 10.0V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZ10CS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 7.58
.MODEL DF D ( IS=8.24p RS=30.4 N=1.10
+ CJO=39.7p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.65f RS=4.11 N=3.00 )
.ENDS


*SRC=DDZ11C;DI_DDZ11C;Diodes;Zener 10V-50V; 11.0V  0.500W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZ11C  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 8.77
.MODEL DF D ( IS=18.7p RS=32.7 N=1.10
+ CJO=33.9p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.75f RS=2.30 N=2.97 )
.ENDS


*SRC=DDZ11CS;DI_DDZ11CS;Diodes;Zener 10V-50V; 11.0V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZ11CS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 8.70
.MODEL DF D ( IS=7.49p RS=30.1 N=1.10
+ CJO=33.9p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.50f RS=2.30 N=2.97 )
.ENDS


*SRC=DDZ12C;DI_DDZ12C;Diodes;Zener 10V-50V; 12.0V  0.500W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZ12C  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 9.73
.MODEL DF D ( IS=17.2p RS=32.5 N=1.10
+ CJO=32.7p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.43f RS=4.23 N=3.00 )
.ENDS


*SRC=DDZ12CS;DI_DDZ12CS;Diodes;Zener 10V-50V; 12.0V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZ12CS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 9.66
.MODEL DF D ( IS=6.87p RS=29.9 N=1.10
+ CJO=32.7p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.37f RS=4.23 N=3.00 )
.ENDS


*SRC=DDZ13B;DI_DDZ13B;Diodes;Zener 10V-50V; 13.0V  0.500W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZ13B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 10.7
.MODEL DF D ( IS=15.8p RS=32.3 N=1.10
+ CJO=26.4p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.17f RS=6.23 N=3.00 )
.ENDS


*SRC=DDZ13BS;DI_DDZ13BS;Diodes;Zener 10V-50V; 13.0V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZ13BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 10.6
.MODEL DF D ( IS=6.34p RS=29.7 N=1.10
+ CJO=26.4p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.27f RS=6.23 N=3.00 )
.ENDS


*SRC=DDZ14;DI_DDZ14;Diodes;Zener 10V-50V; 14.0V  0.500W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZ14  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 11.7
.MODEL DF D ( IS=14.7p RS=32.1 N=1.10
+ CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.94f RS=8.23 N=3.00 )
.ENDS


*SRC=DDZ14S;DI_DDZ14S;Diodes;Zener 10V-50V; 14.0V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZ14S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 11.6
.MODEL DF D ( IS=5.89p RS=29.4 N=1.10
+ CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.18f RS=8.23 N=3.00 )
.ENDS


*SRC=DDZ15;DI_DDZ15;Diodes;Zener 10V-50V; 15.0V  0.500W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZ15  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 12.7
.MODEL DF D ( IS=13.7p RS=31.9 N=1.10
+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.75f RS=10.2 N=3.00 )
.ENDS


*SRC=DDZ15S;DI_DDZ15S;Diodes;Zener 10V-50V; 15.0V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZ15S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 12.6
.MODEL DF D ( IS=5.49p RS=29.3 N=1.10
+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.10f RS=10.2 N=3.00 )
.ENDS


*SRC=DDZ16;DI_DDZ16;Diodes;Zener 10V-50V; 16.0V  0.500W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZ16  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 13.6
.MODEL DF D ( IS=12.9p RS=31.7 N=1.10
+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.58f RS=10.2 N=3.00 )
.ENDS


*SRC=DDZ16S;DI_DDZ16S;Diodes;Zener 10V-50V; 16.0V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZ16S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 13.6
.MODEL DF D ( IS=5.15p RS=29.1 N=1.10
+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.03f RS=10.2 N=3.00 )
.ENDS


*SRC=DDZ18C;DI_DDZ18C;Diodes;Zener 10V-50V; 18.0V  0.500W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZ18C  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 15.6
.MODEL DF D ( IS=11.4p RS=31.3 N=1.10
+ CJO=21.4p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.29f RS=15.2 N=3.00 )
.ENDS


*SRC=DDZ18CS;DI_DDZ18CS;Diodes;Zener 10V-50V; 18.0V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZ18CS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 15.5
.MODEL DF D ( IS=4.58p RS=28.7 N=1.10
+ CJO=21.4p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=9.16e-016 RS=15.2 N=3.00 )
.ENDS


*SRC=DDZ20C;DI_DDZ20C;Diodes;Zener 10V-50V; 20.0V  0.500W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZ20C  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 17.5
.MODEL DF D ( IS=10.3p RS=31.0 N=1.10
+ CJO=20.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.06f RS=20.2 N=3.00 )
.ENDS


*SRC=DDZ20CS;DI_DDZ20CS;Diodes;Zener 10V-50V; 20.0V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZ20CS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 17.5
.MODEL DF D ( IS=4.12p RS=28.4 N=1.10
+ CJO=20.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.24e-016 RS=20.2 N=3.00 )
.ENDS


*SRC=DDZ22D;DI_DDZ22D;Diodes;Zener 10V-50V; 22.0V  0.500W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZ22D  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 19.7
.MODEL DF D ( IS=9.36p RS=30.8 N=1.10
+ CJO=18.9p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.87f RS=14.5 N=3.00 )
.ENDS


*SRC=DDZ22DS;DI_DDZ22DS;Diodes;Zener 10V-50V; 22.0V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZ22DS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 19.6
.MODEL DF D ( IS=3.75p RS=28.2 N=1.10
+ CJO=18.9p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=7.49e-016 RS=14.5 N=3.00 )
.ENDS


*SRC=DDZ24C;DI_DDZ24C;Diodes;Zener 10V-50V; 24.0V  0.500W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZ24C  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 21.7
.MODEL DF D ( IS=8.58p RS=30.5 N=1.10
+ CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.72f RS=19.5 N=3.00 )
.ENDS


*SRC=DDZ24CS;DI_DDZ24CS;Diodes;Zener 10V-50V; 24.0V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZ24CS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 21.6
.MODEL DF D ( IS=3.43p RS=27.9 N=1.10
+ CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.87e-016 RS=19.5 N=3.00 )
.ENDS


*SRC=DDZ27D;DI_DDZ27D;Diodes;Zener 10V-50V; 27.0V  0.500W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZ27D  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 24.6
.MODEL DF D ( IS=7.63p RS=30.2 N=1.10
+ CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.53f RS=29.5 N=3.00 )
.ENDS


*SRC=DDZ27DS;DI_DDZ27DS;Diodes;Zener 10V-50V; 27.0V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZ27DS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 24.5
.MODEL DF D ( IS=3.05p RS=27.6 N=1.10
+ CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.10e-016 RS=29.5 N=3.00 )
.ENDS


*SRC=DDZ30D;DI_DDZ30D;Diodes;Zener 10V-50V; 30.0V  0.500W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZ30D  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 27.6
.MODEL DF D ( IS=6.87p RS=29.9 N=1.10
+ CJO=15.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.37f RS=39.5 N=3.00 )
.ENDS


*SRC=DDZ30DS;DI_DDZ30DS;Diodes;Zener 10V-50V; 30.0V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZ30DS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 27.5
.MODEL DF D ( IS=2.75p RS=27.3 N=1.10
+ CJO=15.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.49e-016 RS=39.5 N=3.00 )
.ENDS


*SRC=DDZ33;DI_DDZ33;Diodes;Zener 10V-50V; 33.0V  0.500W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZ33  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 30.4
.MODEL DF D ( IS=6.24p RS=29.6 N=1.10
+ CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.25f RS=59.5 N=3.00 )
.ENDS


*SRC=DDZ33S;DI_DDZ33S;Diodes;Zener 10V-50V; 33.0V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZ33S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 30.4
.MODEL DF D ( IS=2.50p RS=27.0 N=1.10
+ CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.99e-016 RS=59.5 N=3.00 )
.ENDS


*SRC=DDZ36;DI_DDZ36;Diodes;Zener 10V-50V; 36.0V  0.500W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZ36  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 33.4
.MODEL DF D ( IS=5.72p RS=29.4 N=1.10
+ CJO=23.9p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.14f RS=69.5 N=3.00 )
.ENDS


*SRC=DDZ36S;DI_DDZ36S;Diodes;Zener 10V-50V; 36.0V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZ36S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 33.3
.MODEL DF D ( IS=2.29p RS=26.8 N=1.10
+ CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.58e-016 RS=69.5 N=3.00 )
.ENDS


*SRC=DDZ39F;DI_DDZ39F;Diodes;Zener 10V-50V; 39.0V  0.500W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZ39F  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 36.4
.MODEL DF D ( IS=5.28p RS=29.1 N=1.10
+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.06f RS=69.5 N=3.00 )
.ENDS


*SRC=DDZ43;DI_DDZ43;Diodes;Zener 10V-50V; 43.0V  0.500W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZ43  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 40.4
.MODEL DF D ( IS=4.79p RS=28.9 N=1.10
+ CJO=20.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=9.58e-016 RS=74.5 N=3.00 )
.ENDS


*SRC=DDZ43S;DI_DDZ43S;Diodes;Zener 10V-50V; 43.0V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZ43S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 40.3
.MODEL DF D ( IS=1.92p RS=26.3 N=1.10
+ CJO=12.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.83e-016 RS=74.5 N=3.00 )
.ENDS


*SRC=DDZ5V1B;DI_DDZ5V1B;Diodes;Zener <=10V; 5.10V  0.500W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZ5V1B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.62
.MODEL DF D ( IS=40.4p RS=34.9 N=1.10
+ CJO=119p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.08f RS=13.1 N=3.00 )
.ENDS


*SRC=DDZ5V1BS;DI_DDZ5V1BS;Diodes;Zener <=10V; 5.10V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZ5V1BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.55
.MODEL DF D ( IS=16.2p RS=32.3 N=1.10
+ CJO=119p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.23f RS=13.1 N=3.00 )
.ENDS


*SRC=DDZ5V6B;DI_DDZ5V6B;Diodes;Zener <=10V; 5.60V  0.500W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZ5V6B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 3.23
.MODEL DF D ( IS=36.8p RS=34.7 N=1.10
+ CJO=106p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=7.36f RS=7.11 N=3.00 )
.ENDS


*SRC=DDZ5V6BS;DI_DDZ5V6BS;Diodes;Zener <=10V; 5.60V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZ5V6BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 3.16
.MODEL DF D ( IS=14.7p RS=32.1 N=1.10
+ CJO=106p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.94f RS=7.11 N=3.00 )
.ENDS


*SRC=DDZ6V2B;DI_DDZ6V2B;Diodes;Zener <=10V; 6.20V  0.500W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZ6V2B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 3.91
.MODEL DF D ( IS=33.2p RS=34.4 N=1.10
+ CJO=80.7p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.65f RS=3.11 N=3.00 )
.ENDS


*SRC=DDZ6V2BS;DI_DDZ6V2BS;Diodes;Zener <=10V; 6.20V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZ6V2BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 3.83
.MODEL DF D ( IS=13.3p RS=31.8 N=1.10
+ CJO=80.7p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.66f RS=3.11 N=3.00 )
.ENDS


*SRC=DDZ6V8C;DI_DDZ6V8C;Diodes;Zener <=10V; 6.80V  0.500W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZ6V8C  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 4.56
.MODEL DF D ( IS=30.3p RS=34.1 N=1.10
+ CJO=72.7p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.06f RS=1.15 N=2.97 )
.ENDS


*SRC=DDZ6V8CS;DI_DDZ6V8CS;Diodes;Zener <=10V; 6.80V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZ6V8CS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 4.49
.MODEL DF D ( IS=12.1p RS=31.5 N=1.10
+ CJO=72.7p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.42f RS=1.15 N=2.97 )
.ENDS


*SRC=DDZ7V5C;DI_DDZ7V5C;Diodes;Zener <=10V; 7.50V  0.500W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZ7V5C  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.21
.MODEL DF D ( IS=27.5p RS=33.8 N=1.10
+ CJO=52.9p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.49f RS=2.12 N=3.00 )
.ENDS


*SRC=DDZ7V5CS;DI_DDZ7V5CS;Diodes;Zener <=10V; 7.50V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZ7V5CS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.14
.MODEL DF D ( IS=11.0p RS=31.2 N=1.10
+ CJO=52.9p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.20f RS=2.12 N=3.00 )
.ENDS


*DIODES_INC_SPICE_MODEL
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=1Mar2011
*VERSION=2


.SUBCKT DDZ8V2C  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 7.6
.MODEL DF D ( IS=25.1p RS=33.6 N=1.10
+ CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.02f RS=3.8 N=1 )
.ENDS

.SIMULATOR DEFAULT

*                (c)  2013 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*SRC=DDZ8V2CS;DI_DDZ8V2CS;Diodes;Zener <=10V; 8.20V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZ8V2CS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.79
.MODEL DF D ( IS=10.0p RS=31.0 N=1.10
+ CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.01f RS=4.11 N=3.00 )
.ENDS


*SRC=DDZ9678;DDZ9678;Diodes;Zener <=10V; 1.80V  0.500W   DIODES ZENER DIODE
*SYM=HZEN
.SUBCKT DDZ9678  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.80
.MODEL DF D ( IS=114p RS=3.13 N=1.10
+ CJO=145p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=22.9f RS=43.7m N=282u )
.ENDS


*SRC=DDZ9688;DI_DDZ9688;Diodes;Zener <=10V; 4.70V  0.500W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9688  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.63
.MODEL DF D ( IS=43.8p RS=35.2 N=1.10
+ CJO=119p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.77f RS=6.45k N=3.00 )
.ENDS


*SRC=DDZ9689;DI_DDZ9689;Diodes;Zener <=10V; 5.10V  0.500W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9689  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 3.15
.MODEL DF D ( IS=40.4p RS=34.9 N=1.10
+ CJO=119p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.08f RS=3.95k N=3.00 )
.ENDS


*SRC=DDZ9689S;DI_DDZ9689S;Diodes;Zener <=10V; 5.10V  0.200W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9689S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 3.08
.MODEL DF D ( IS=16.2p RS=32.3 N=1.10
+ CJO=119p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.23f RS=3.95k N=3.00 )
.ENDS


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=17/09/2014
*VERSION=1


.model DDZ9689T D(IS=.015p RS=.06 CJO=165p M=0.5 IKF=20m VJ=0.5  N=1.08 BV=5.8 NBVL=24 NBV=1.2 IBVL=.15m IBV=.4m TT=40n EG=1.1 TRS1=1.1m TBV1=.01m) 

*         (c)  2014 Diodes Inc
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*

.SIMULATOR DEFAULT


*SRC=DDZ9690;DI_DDZ9690;Diodes;Zener <=10V; 5.60V  0.500W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9690  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 3.79
.MODEL DF D ( IS=36.8p RS=34.7 N=1.10
+ CJO=92.6p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=7.36f RS=946 N=3.00 )
.ENDS


*SRC=DDZ9690S;DI_DDZ9690S;Diodes;Zener <=10V; 5.60V  0.200W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9690S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 3.72
.MODEL DF D ( IS=14.7p RS=32.1 N=1.10
+ CJO=92.6p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.94f RS=946 N=3.00 )
.ENDS


*SRC=DDZ9690T;DI_DDZ9690T;Diodes;Zener <=10V; 5.60V  0.150W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9690T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 3.70
.MODEL DF D ( IS=11.0p RS=31.2 N=1.10
+ CJO=92.6p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.21f RS=946 N=3.00 )
.ENDS


*SRC=DDZ9691;DI_DDZ9691;Diodes;Zener <=10V; 6.20V  0.500W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9691  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.31
.MODEL DF D ( IS=33.2p RS=34.4 N=1.10
+ CJO=79.4p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.65f RS=230 N=1.49 )
.ENDS


*SRC=DDZ9691S;DI_DDZ9691S;Diodes;Zener <=10V; 6.20V  0.200W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9691S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.28
.MODEL DF D ( IS=13.3p RS=31.8 N=1.10
+ CJO=79.4p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.66f RS=230 N=1.49 )
.ENDS


*SRC=DDZ9691T;DI_DDZ9691T;Diodes;Zener <=10V; 6.20V  0.150W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9691T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.27
.MODEL DF D ( IS=9.97p RS=31.0 N=1.10
+ CJO=79.4p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.99f RS=230 N=1.49 )
.ENDS


*SRC=DDZ9692;DI_DDZ9692;Diodes;Zener <=10V; 6.80V  0.500W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9692  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 6.71
.MODEL DF D ( IS=30.3p RS=34.1 N=1.10
+ CJO=52.9p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.06f RS=23.0 N=0.149 )
.ENDS


*SRC=DDZ9692S;DI_DDZ9692S;Diodes;Zener <=10V; 6.80V  0.200W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9692S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 6.71
.MODEL DF D ( IS=12.1p RS=31.5 N=1.10
+ CJO=52.9p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.42f RS=23.0 N=0.149 )
.ENDS


*SRC=DDZ9692T;DI_DDZ9692T;Diodes;Zener <=10V; 6.80V  0.150W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9692T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 6.71
.MODEL DF D ( IS=9.09p RS=30.7 N=1.10
+ CJO=52.9p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.82f RS=23.0 N=0.149 )
.ENDS


*SRC=DDZ9693;DI_DDZ9693;Diodes;Zener <=10V; 7.50V  0.500W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9693  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 7.41
.MODEL DF D ( IS=27.5p RS=33.8 N=1.10
+ CJO=52.9p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.49f RS=23.0 N=0.149 )
.ENDS


*SRC=DDZ9693S;DI_DDZ9693S;Diodes;Zener <=10V; 7.50V  0.200W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9693S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 7.41
.MODEL DF D ( IS=11.0p RS=31.2 N=1.10
+ CJO=52.9p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.20f RS=23.0 N=0.149 )
.ENDS


*SRC=DDZ9693T;DI_DDZ9693T;Diodes;Zener <=10V; 7.50V  0.150W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9693T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 7.41
.MODEL DF D ( IS=8.24p RS=30.4 N=1.10
+ CJO=52.9p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.65f RS=23.0 N=0.149 )
.ENDS


*SRC=DDZ9694;DI_DDZ9694;Diodes;Zener <=10V; 8.20V  0.500W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9694  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 8.07
.MODEL DF D ( IS=25.1p RS=33.6 N=1.10
+ CJO=47.6p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.02f RS=34.5 N=0.223 )
.ENDS


*SRC=DDZ9694S;DI_DDZ9694S;Diodes;Zener <=10V; 8.20V  0.200W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9694S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 8.06
.MODEL DF D ( IS=10.0p RS=31.0 N=1.10
+ CJO=47.6p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.01f RS=34.5 N=0.223 )
.ENDS


*SRC=DDZ9694T;DI_DDZ9694T;Diodes;Zener <=10V; 8.20V  0.150W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9694T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 8.06
.MODEL DF D ( IS=7.54p RS=30.2 N=1.10
+ CJO=47.6p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.51f RS=34.5 N=0.223 )
.ENDS


*SRC=DDZ9696;DI_DDZ9696;Diodes;Zener <=10V; 9.10V  0.500W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9696  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 8.90
.MODEL DF D ( IS=22.6p RS=33.3 N=1.10
+ CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.53f RS=50.6 N=0.327 )
.ENDS


*SRC=DDZ9696S;DI_DDZ9696S;Diodes;Zener <=10V; 9.10V  0.200W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9696S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 8.89
.MODEL DF D ( IS=9.05p RS=30.7 N=1.10
+ CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.81f RS=50.6 N=0.327 )
.ENDS


*SRC=DDZ9696T;DI_DDZ9696T;Diodes;Zener <=10V; 9.10V  0.150W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9696T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 8.89
.MODEL DF D ( IS=6.79p RS=29.9 N=1.10
+ CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.36f RS=50.6 N=0.327 )
.ENDS


*SRC=DDZ9697;DI_DDZ9697;Diodes;Zener <=10V; 10.0V  0.500W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9697  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 9.73
.MODEL DF D ( IS=20.6p RS=33.0 N=1.10
+ CJO=39.7p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.12f RS=69.0 N=0.446 )
.ENDS


*SRC=DDZ9697S;DI_DDZ9697S;Diodes;Zener <=10V; 10.0V  0.200W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9697S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 9.72
.MODEL DF D ( IS=8.24p RS=30.4 N=1.10
+ CJO=39.7p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.65f RS=69.0 N=0.446 )
.ENDS


*SRC=DDZ9697T;DI_DDZ9697T;Diodes;Zener <=10V; 10.0V  0.150W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9697T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 9.71
.MODEL DF D ( IS=6.18p RS=29.6 N=1.10
+ CJO=39.7p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.24f RS=69.0 N=0.446 )
.ENDS


*SRC=DDZ9698;DI_DDZ9698;Diodes;Zener 10V-50V; 11.0V  0.500W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9698  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 10.7
.MODEL DF D ( IS=18.7p RS=32.7 N=1.10
+ CJO=35.2p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.75f RS=69.0 N=0.446 )
.ENDS


*SRC=DDZ9698T;DI_DDZ9698T;Diodes;Zener 10V-50V; 11.0V  0.150W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9698T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 10.7
.MODEL DF D ( IS=18.7p RS=32.7 N=1.10
+ CJO=35.2p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.75f RS=69.0 N=0.446 )
.ENDS


*SRC=DDZ9699;DI_DDZ9699;Diodes;Zener 10V-50V; 12.0V  0.500W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9699  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 11.7
.MODEL DF D ( IS=17.2p RS=32.5 N=1.10
+ CJO=32.7p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.43f RS=69.0 N=0.446 )
.ENDS


*SRC=DDZ9699S;DI_DDZ9699S;Diodes;Zener 10V-50V; 12.0V  0.200W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9699S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 11.7
.MODEL DF D ( IS=6.87p RS=29.9 N=1.10
+ CJO=32.7p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.37f RS=69.0 N=0.446 )
.ENDS


*SRC=DDZ9699T;DI_DDZ9699T;Diodes;Zener 10V-50V; 12.0V  0.150W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9699T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 11.7
.MODEL DF D ( IS=5.15p RS=29.1 N=1.10
+ CJO=32.7p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.03f RS=69.0 N=0.446 )
.ENDS


*SRC=DDZ9700;DI_DDZ9700;Diodes;Zener 10V-50V; 13.0V  0.500W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9700  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 12.7
.MODEL DF D ( IS=15.8p RS=32.3 N=1.10
+ CJO=30.2p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.17f RS=69.0 N=0.446 )
.ENDS


*SRC=DDZ9700S;DI_DDZ9700S;Diodes;Zener 10V-50V; 13.0V  0.200W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9700S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 12.7
.MODEL DF D ( IS=6.34p RS=29.7 N=1.10
+ CJO=30.2p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.27f RS=69.0 N=0.446 )
.ENDS


*SRC=DDZ9700T;DI_DDZ9700T;Diodes;Zener 10V-50V; 13.0V  0.150W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9700T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 12.7
.MODEL DF D ( IS=4.75p RS=28.8 N=1.10
+ CJO=30.2p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=9.51e-016 RS=69.0 N=0.446 )
.ENDS


*SRC=DDZ9701;DI_DDZ9701;Diodes;Zener 10V-50V; 14.0V  0.500W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9701  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 13.7
.MODEL DF D ( IS=14.7p RS=32.1 N=1.10
+ CJO=27.7p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.94f RS=69.0 N=0.446 )
.ENDS


*SRC=DDZ9702;DI_DDZ9702;Diodes;Zener 10V-50V; 15.0V  0.500W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9702  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 14.7
.MODEL DF D ( IS=13.7p RS=31.9 N=1.10
+ CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.75f RS=69.0 N=0.446 )
.ENDS


*SRC=DDZ9702S;DI_DDZ9702S;Diodes;Zener 10V-50V; 15.0V  0.200W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9702S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 14.7
.MODEL DF D ( IS=5.49p RS=29.3 N=1.10
+ CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.10f RS=69.0 N=0.446 )
.ENDS


*SRC=DDZ9702T;DI_DDZ9702T;Diodes;Zener 10V-50V; 15.0V  0.150W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9702T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 14.7
.MODEL DF D ( IS=4.12p RS=28.4 N=1.10
+ CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.24e-016 RS=69.0 N=0.446 )
.ENDS


*SRC=DDZ9703;DI_DDZ9703;Diodes;Zener 10V-50V; 16.0V  0.500W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9703  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 15.7
.MODEL DF D ( IS=12.9p RS=31.7 N=1.10
+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.58f RS=69.0 N=0.446 )
.ENDS


*SRC=DDZ9703S;DI_DDZ9703S;Diodes;Zener 10V-50V; 16.0V  0.200W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9703S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 15.7
.MODEL DF D ( IS=5.15p RS=29.1 N=1.10
+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.03f RS=69.0 N=0.446 )
.ENDS


*SRC=DDZ9703T;DI_DDZ9703T;Diodes;Zener 10V-50V; 16.0V  0.150W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9703T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 15.7
.MODEL DF D ( IS=3.86p RS=28.2 N=1.10
+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=7.73e-016 RS=69.0 N=0.446 )
.ENDS


*SRC=DDZ9705;DI_DDZ9705;Diodes;Zener 10V-50V; 18.0V  0.500W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9705  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 17.7
.MODEL DF D ( IS=11.4p RS=31.3 N=1.10
+ CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.29f RS=69.0 N=0.446 )
.ENDS


*SRC=DDZ9705S;DI_DDZ9705S;Diodes;Zener 10V-50V; 18.0V  0.200W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9705S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 17.7
.MODEL DF D ( IS=4.58p RS=28.7 N=1.10
+ CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=9.16e-016 RS=69.0 N=0.446 )
.ENDS


*SRC=DDZ9705T;DI_DDZ9705T;Diodes;Zener 10V-50V; 18.0V  0.150W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9705T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 17.7
.MODEL DF D ( IS=3.43p RS=27.9 N=1.10
+ CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.87e-016 RS=69.0 N=0.446 )
.ENDS


*SRC=DDZ9707;DI_DDZ9707;Diodes;Zener 10V-50V; 20.0V  0.500W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9707  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 19.7
.MODEL DF D ( IS=10.3p RS=31.0 N=1.10
+ CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.06f RS=69.0 N=0.446 )
.ENDS


*SRC=DDZ9707S;DI_DDZ9707S;Diodes;Zener 10V-50V; 20.0V  0.200W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9707S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 19.7
.MODEL DF D ( IS=4.12p RS=28.4 N=1.10
+ CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.24e-016 RS=69.0 N=0.446 )
.ENDS


*SRC=DDZ9707T;DI_DDZ9707T;Diodes;Zener 10V-50V; 20.0V  0.150W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9707T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 19.7
.MODEL DF D ( IS=3.09p RS=27.6 N=1.10
+ CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.18e-016 RS=69.0 N=0.446 )
.ENDS


*SRC=DDZ9708;DI_DDZ9708;Diodes;Zener 10V-50V; 22.0V  0.500W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9708  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 21.6
.MODEL DF D ( IS=9.36p RS=30.8 N=1.10
+ CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.87f RS=92.0 N=0.594 )
.ENDS


*SRC=DDZ9708S;DI_DDZ9708S;Diodes;Zener 10V-50V; 22.0V  0.200W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9708S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 21.6
.MODEL DF D ( IS=3.75p RS=28.2 N=1.10
+ CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=7.49e-016 RS=92.0 N=0.594 )
.ENDS


*SRC=DDZ9708T;DI_DDZ9708T;Diodes;Zener 10V-50V; 22.0V  0.150W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9708T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 21.6
.MODEL DF D ( IS=2.81p RS=27.3 N=1.10
+ CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.62e-016 RS=92.0 N=0.594 )
.ENDS


*SRC=DDZ9709;DI_DDZ9709;Diodes;Zener 10V-50V; 24.0V  0.500W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9709  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 23.6
.MODEL DF D ( IS=8.58p RS=30.5 N=1.10
+ CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.72f RS=92.0 N=0.594 )
.ENDS


*SRC=DDZ9709S;DI_DDZ9709S;Diodes;Zener 10V-50V; 24.0V  0.200W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9709S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 23.6
.MODEL DF D ( IS=3.43p RS=27.9 N=1.10
+ CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.87e-016 RS=92.0 N=0.594 )
.ENDS


*SRC=DDZ9709T;DI_DDZ9709T;Diodes;Zener 10V-50V; 24.0V  0.150W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9709T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 23.6
.MODEL DF D ( IS=2.57p RS=27.1 N=1.10
+ CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.15e-016 RS=92.0 N=0.594 )
.ENDS


*SRC=DDZ9711;DI_DDZ9711;Diodes;Zener 10V-50V; 27.0V  0.500W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9711  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 26.6
.MODEL DF D ( IS=7.63p RS=30.2 N=1.10
+ CJO=15.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.53f RS=92.0 N=0.594 )
.ENDS


*SRC=DDZ9711S;DI_DDZ9711S;Diodes;Zener 10V-50V; 27.0V  0.200W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9711S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 26.6
.MODEL DF D ( IS=3.05p RS=27.6 N=1.10
+ CJO=15.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.10e-016 RS=92.0 N=0.594 )
.ENDS


*SRC=DDZ9711T;DI_DDZ9711T;Diodes;Zener 10V-50V; 27.0V  0.150W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9711T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 26.6
.MODEL DF D ( IS=2.29p RS=26.8 N=1.10
+ CJO=15.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.58e-016 RS=92.0 N=0.594 )
.ENDS


*SRC=DDZ9712;DI_DDZ9712;Diodes;Zener 10V-50V; 28.0V  0.500W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9712  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 27.6
.MODEL DF D ( IS=7.36p RS=30.1 N=1.10
+ CJO=15.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.47f RS=92.0 N=0.594 )


*SRC=DDZ9712S;DI_DDZ9712S;Diodes;Zener 10V-50V; 28.0V  0.200W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9712S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 27.6
.MODEL DF D ( IS=2.94p RS=27.5 N=1.10
+ CJO=15.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.89e-016 RS=92.0 N=0.594 )
.ENDS


*SRC=DDZ9712T;DI_DDZ9712T;Diodes;Zener 10V-50V; 28.0V  0.150W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9712T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 27.6
.MODEL DF D ( IS=2.21p RS=26.7 N=1.10
+ CJO=15.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.41e-016 RS=92.0 N=0.594 )
.ENDS


*SRC=DDZ9713;DI_DDZ9713;Diodes;Zener 10V-50V; 30.0V  0.500W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9713  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 29.6
.MODEL DF D ( IS=6.87p RS=29.9 N=1.10
+ CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.37f RS=92.0 N=0.594 )
.ENDS


*SRC=DDZ9713S;DI_DDZ9713S;Diodes;Zener 10V-50V; 30.0V  0.200W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9713S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 29.6
.MODEL DF D ( IS=2.75p RS=27.3 N=1.10
+ CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.49e-016 RS=92.0 N=0.594 )
.ENDS


*SRC=DDZ9713T;DI_DDZ9713T;Diodes;Zener 10V-50V; 30.0V  0.150W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9713T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 29.6
.MODEL DF D ( IS=2.06p RS=26.5 N=1.10
+ CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.12e-016 RS=92.0 N=0.594 )
.ENDS


*SRC=DDZ9714;DI_DDZ9714;Diodes;Zener 10V-50V; 33.0V  0.500W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9714  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 31.0
.MODEL DF D ( IS=6.24p RS=29.6 N=1.10
+ CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.25f RS=1.35k N=3.00 )
.ENDS


*SRC=DDZ9714S;DI_DDZ9714S;Diodes;Zener 10V-50V; 33.0V  0.200W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9714S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 31.0
.MODEL DF D ( IS=2.50p RS=27.0 N=1.10
+ CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.99e-016 RS=1.35k N=3.00 )
.ENDS


*SRC=DDZ9714T;DI_DDZ9714T;Diodes;Zener 10V-50V; 33.0V  0.150W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9714T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 30.9
.MODEL DF D ( IS=1.87p RS=26.2 N=1.10
+ CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.75e-016 RS=1.35k N=3.00 )
.ENDS


*SRC=DDZ9715;DI_DDZ9715;Diodes;Zener 10V-50V; 36.0V  0.500W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9715  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 33.9
.MODEL DF D ( IS=5.72p RS=29.4 N=1.10
+ CJO=13.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.14f RS=4.45k N=3.00 )
.ENDS


*SRC=DDZ9715S;DI_DDZ9715S;Diodes;Zener 10V-50V; 36.0V  0.200W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9715S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 34.0
.MODEL DF D ( IS=2.29p RS=26.8 N=1.10
+ CJO=13.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.58e-016 RS=1.45k N=3.00 )
.ENDS


*SRC=DDZ9715T;DI_DDZ9715T;Diodes;Zener 10V-50V; 36.0V  0.150W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9715T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 33.9
.MODEL DF D ( IS=1.72p RS=25.9 N=1.10
+ CJO=13.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.43e-016 RS=1.45k N=3.00 )
.ENDS


*SRC=DDZ9716;DI_DDZ9716;Diodes;Zener 10V-50V; 39.0V  0.500W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9716  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 36.9
.MODEL DF D ( IS=5.28p RS=29.1 N=1.10
+ CJO=24.5p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.06f RS=4.45k N=3.00 )
.ENDS


*SRC=DDZ9716S;DI_DDZ9716S;Diodes;Zener 10V-50V; 39.0V  0.200W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9716S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 36.9
.MODEL DF D ( IS=2.11p RS=26.5 N=1.10
+ CJO=12.8p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.23e-016 RS=1.45k N=3.00 )
.ENDS


*SRC=DDZ9716T;DI_DDZ9716T;Diodes;Zener 10V-50V; 39.0V  0.150W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9716T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 36.9
.MODEL DF D ( IS=1.58p RS=25.7 N=1.10
+ CJO=12.8p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.17e-016 RS=1.45k N=3.00 )
.ENDS


*SRC=DDZ9717;DI_DDZ9717;Diodes;Zener 10V-50V; 43.0V  0.500W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9717  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 40.8
.MODEL DF D ( IS=4.79p RS=28.9 N=1.10
+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=9.58e-016 RS=6.25k N=3.00 )
.ENDS


*SRC=DDZ9717S;DI_DDZ9717S;Diodes;Zener 10V-50V; 43.0V  0.200W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9717S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 40.7
.MODEL DF D ( IS=1.92p RS=26.3 N=1.10
+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.83e-016 RS=6.25k N=3.00 )


*SRC=DDZ9717T;DI_DDZ9717T;Diodes;Zener 10V-50V; 43.0V  0.150W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DDZ9717T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 40.7
.MODEL DF D ( IS=1.44p RS=25.4 N=1.10
+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.87e-016 RS=6.25k N=3.00 )
.ENDS


*SRC=DDZ9V1C;DI_DDZ9V1C;Diodes;Zener <=10V; 9.10V  0.500W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZ9V1C  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 6.76
.MODEL DF D ( IS=22.6p RS=33.3 N=1.10
+ CJO=41.0p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.53f RS=4.11 N=3.00 )
.ENDS


*SRC=DDZ9V1CS;DI_DDZ9V1CS;Diodes;Zener <=10V; 9.10V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZ9V1CS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 6.68
.MODEL DF D ( IS=9.05p RS=30.7 N=1.10
+ CJO=41.0p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.81f RS=4.11 N=3.00 )
.ENDS


*SRC=DDZX10C;DI_DDZX10C;Diodes;Zener <=10V; 10.0V  0.300W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZX10C  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 7.61
.MODEL DF D ( IS=12.4p RS=31.6 N=1.10
+ CJO=39.7p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.47f RS=4.11 N=3.00 )
.ENDS


*SRC=DDZX11C;DI_DDZX11C;Diodes;Zener 10V-50V; 11.0V  0.300W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZX11C  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 8.74
.MODEL DF D ( IS=11.2p RS=31.3 N=1.10
+ CJO=33.9p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.25f RS=2.30 N=2.97 )
.ENDS


*SRC=DDZX12C;DI_DDZX12C;Diodes;Zener 10V-50V; 12.0V  0.300W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZX12C  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 9.69
.MODEL DF D ( IS=10.3p RS=31.0 N=1.10
+ CJO=32.7p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.06f RS=4.23 N=3.00 )
.ENDS


*SRC=DDZX13B;DI_DDZX13B;Diodes;Zener 10V-50V; 13.0V  0.300W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZX13B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 10.7
.MODEL DF D ( IS=9.51p RS=30.8 N=1.10
+ CJO=26.4p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.90f RS=6.23 N=3.00 )
.ENDS


*SRC=DDZX14;DI_DDZX14;Diodes;Zener 10V-50V; 14.0V  0.300W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZX14  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 11.6
.MODEL DF D ( IS=8.83p RS=30.6 N=1.10
+ CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.77f RS=8.23 N=3.00 )
.ENDS


*SRC=DDZX15;DI_DDZX15;Diodes;Zener 10V-50V; 15.0V  0.300W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZX15  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 12.6
.MODEL DF D ( IS=8.24p RS=30.4 N=1.10
+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.65f RS=10.2 N=3.00 )
.ENDS


*SRC=DDZX16;DI_DDZX16;Diodes;Zener 10V-50V; 16.0V  0.300W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZX16  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 13.6
.MODEL DF D ( IS=7.72p RS=30.2 N=1.10
+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.55f RS=10.2 N=3.00 )
.ENDS


*SRC=DDZX18C;DI_DDZX18C;Diodes;Zener 10V-50V; 18.0V  0.300W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZX18C  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 15.5
.MODEL DF D ( IS=6.87p RS=29.9 N=1.10
+ CJO=21.4p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.37f RS=15.2 N=3.00 )
.ENDS


*SRC=DDZX20C;DI_DDZX20C;Diodes;Zener 10V-50V; 20.0V  0.300W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZX20C  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 17.5
.MODEL DF D ( IS=6.18p RS=29.6 N=1.10
+ CJO=20.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.24f RS=20.2 N=3.00 )
.ENDS


*SRC=DDZX22D;DI_DDZX22D;Diodes;Zener 10V-50V; 22.0V  0.300W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZX22D  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 19.7
.MODEL DF D ( IS=5.62p RS=29.3 N=1.10
+ CJO=18.9p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.12f RS=14.5 N=3.00 )
.ENDS


*SRC=DDZX24C;DI_DDZX24C;Diodes;Zener 10V-50V; 24.0V  0.300W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZX24C  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 21.6
.MODEL DF D ( IS=5.15p RS=29.1 N=1.10
+ CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.03f RS=19.5 N=3.00 )
.ENDS


*SRC=DDZX27D;DI_DDZX27D;Diodes;Zener 10V-50V; 27.0V  0.300W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZX27D  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 24.6
.MODEL DF D ( IS=4.58p RS=28.7 N=1.10
+ CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=9.16e-016 RS=29.5 N=3.00 )
.ENDS


*SRC=DDZX30D;DI_DDZX30D;Diodes;Zener 10V-50V; 30.0V  0.300W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZX30D  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 27.5
.MODEL DF D ( IS=4.12p RS=28.4 N=1.10
+ CJO=15.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.24e-016 RS=39.5 N=3.00 )
.ENDS


*SRC=DDZX33;DI_DDZX33;Diodes;Zener 10V-50V; 33.0V  0.300W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZX33  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 30.4
.MODEL DF D ( IS=3.75p RS=28.2 N=1.10
+ CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=7.49e-016 RS=59.5 N=3.00 )
.ENDS


*SRC=DDZX36;DI_DDZX36;Diodes;Zener 10V-50V; 36.0V  0.300W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZX36  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 33.4
.MODEL DF D ( IS=3.43p RS=27.9 N=1.10
+ CJO=23.9p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.87e-016 RS=69.5 N=3.00 )
.ENDS


*SRC=DDZX39F;DI_DDZX39F;Diodes;Zener 10V-50V; 39.0V  0.300W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZX39  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 36.3
.MODEL DF D ( IS=3.17p RS=27.7 N=1.10
+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.34e-016 RS=69.5 N=3.00 )
.ENDS


*SRC=DDZX43;DI_DDZX43;Diodes;Zener 10V-50V; 43.0V  0.300W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZX43  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 40.3
.MODEL DF D ( IS=2.87p RS=27.4 N=1.10
+ CJO=20.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.75e-016 RS=74.5 N=3.00 )
.ENDS


*SRC=DDZX5V1B;DI_DDZX5V1B;Diodes;Zener <=10V; 5.10V  0.300W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZX5V1B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.58
.MODEL DF D ( IS=24.2p RS=33.5 N=1.10
+ CJO=119p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.85f RS=13.1 N=3.00 )
.ENDS


*SRC=DDZX5V6B;DI_DDZX5V6B;Diodes;Zener <=10V; 5.60V  0.300W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZX5V6B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 3.19
.MODEL DF D ( IS=22.1p RS=33.2 N=1.10
+ CJO=106p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.41f RS=7.11 N=3.00 )
.ENDS


*SRC=DDZX6V2B;DI_DDZX6V2B;Diodes;Zener <=10V; 6.20V  0.300W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZX6V2B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 3.87
.MODEL DF D ( IS=19.9p RS=32.9 N=1.10
+ CJO=80.7p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.99f RS=3.11 N=3.00 )
.ENDS


*SRC=DDZX6V8C;DI_DDZX6V8C;Diodes;Zener <=10V; 6.80V  0.300W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZX6V8C  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 4.52
.MODEL DF D ( IS=18.2p RS=32.7 N=1.10
+ CJO=72.7p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.64f RS=1.15 N=2.97 )
.ENDS


*SRC=DDZX7V5C;DI_DDZX7V5C;Diodes;Zener <=10V; 7.50V  0.300W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZX7V5C  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.17
.MODEL DF D ( IS=16.5p RS=32.4 N=1.10
+ CJO=52.9p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.30f RS=2.12 N=3.00 )
.ENDS


*SRC=DDZX8V2C;DI_DDZX8V2C;Diodes;Zener <=10V; 8.20V  0.300W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZX8V2C  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.82
.MODEL DF D ( IS=15.1p RS=32.1 N=1.10
+ CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.01f RS=4.11 N=3.00 )
.ENDS


*SRC=DDZX9V1C;DI_DDZX9V1C;Diodes;Zener <=10V; 9.10V  0.300W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZX9V1C  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 6.72
.MODEL DF D ( IS=13.6p RS=31.8 N=1.10
+ CJO=41.0p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.72f RS=4.11 N=3.00 )
.ENDS


*SRC=DFLZ8V2;DI_DFLZ8V2;Diodes;Zener <=10V; 8.20V  1.00W   DIODES INC ZENER
*SYM=HZEN
.SUBCKT DI_DFLZ8V2  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.87
.MODEL DF D ( IS=50.2p RS=0.801 N=1.10
+ CJO=767p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=10.0f RS=0.230 N=2.97 )


*SRC=DFLZ9V1;DI_DFLZ9V1;Diodes;Zener <=10V; 9.10V  1.00W   DIODES INC ZENER
*SYM=HZEN
.SUBCKT DI_DFLZ9V1  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 7.96
.MODEL DF D ( IS=45.3p RS=0.786 N=1.10
+ CJO=688p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=9.05f RS=0.230 N=1.49 )


*SRC=DZ23C10;DI_DZ23C10;Diodes;Zener <=10V; 10.0V  0.300W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_DZ23C10  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 7.81
.MODEL DF D ( IS=14.4p RS=32.0 N=1.10
+ CJO=24.1p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.88f RS=4.60 N=2.97 )


*SRC=DZ23C11;DI_DZ23C11;Diodes;Zener 10V-50V; 11.0V  0.300W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_DZ23C11  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 8.80
.MODEL DF D ( IS=13.1p RS=31.7 N=1.10
+ CJO=45.2p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.62f RS=4.60 N=2.97 )


*SRC=DZ23C12;DI_DZ23C12;Diodes;Zener 10V-50V; 12.0V  0.300W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_DZ23C12  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 9.75
.MODEL DF D ( IS=12.0p RS=31.5 N=1.10
+ CJO=42.7p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.40f RS=9.46 N=3.00 )


*SRC=DZ23C13;DI_DZ23C13;Diodes;Zener 10V-50V; 13.0V  0.300W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_DZ23C13  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 10.7
.MODEL DF D ( IS=11.1p RS=31.3 N=1.10
+ CJO=40.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.22f RS=14.5 N=3.00 )


*SRC=DZ23C15;DI_DZ23C15;Diodes;Zener 10V-50V; 15.0V  0.300W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_DZ23C15  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 12.7
.MODEL DF D ( IS=9.61p RS=30.8 N=1.10
+ CJO=37.2p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.92f RS=14.5 N=3.00 )


*SRC=DZ23C16;DI_DZ23C16;Diodes;Zener 10V-50V; 16.0V  0.300W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_DZ23C16  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 13.7
.MODEL DF D ( IS=9.01p RS=30.7 N=1.10
+ CJO=35.8p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.80f RS=24.5 N=3.00 )


*SRC=DZ23C18;DI_DZ23C18;Diodes;Zener 10V-50V; 18.0V  0.300W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_DZ23C18  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 15.6
.MODEL DF D ( IS=8.01p RS=30.3 N=1.10
+ CJO=33.5p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.60f RS=29.5 N=3.00 )


*SRC=DZ23C20;DI_DZ23C20;Diodes;Zener 10V-50V; 20.0V  0.300W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_DZ23C20  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 17.6
.MODEL DF D ( IS=7.21p RS=30.0 N=1.10
+ CJO=31.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.44f RS=39.5 N=3.00 )


*SRC=DZ23C22;DI_DZ23C22;Diodes;Zener 10V-50V; 22.0V  0.300W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_DZ23C22  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 19.6
.MODEL DF D ( IS=6.55p RS=29.8 N=1.10
+ CJO=30.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.31f RS=39.5 N=3.00 )


*SRC=DZ23C24;DI_DZ23C24;Diodes;Zener 10V-50V; 24.0V  0.300W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_DZ23C24  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 21.5
.MODEL DF D ( IS=6.01p RS=29.5 N=1.10
+ CJO=28.9p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.20f RS=54.5 N=3.00 )


*SRC=DZ23C27;DI_DZ23C27;Diodes;Zener 10V-50V; 27.0V  0.300W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_DZ23C27  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 24.4
.MODEL DF D ( IS=5.34p RS=29.2 N=1.10
+ CJO=27.3p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.07f RS=64.5 N=3.00 )


*SRC=DZ23C2V7;DI_DZ23C2V7;Diodes;Zener <=10V; 2.70V  0.300W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_DZ23C2V7  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.190
.MODEL DF D ( IS=53.4p RS=35.7 N=1.10
+ CJO=172p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=10.7f RS=84.5 N=3.00 )


*SRC=DZ23C30;DI_DZ23C30;Diodes;Zener 10V-50V; 30.0V  0.300W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_DZ23C30  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 27.4
.MODEL DF D ( IS=4.81p RS=28.9 N=1.10
+ CJO=26.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=9.61e-016 RS=64.5 N=3.00 )


*SRC=DZ23C33;DI_DZ23C33;Diodes;Zener 10V-50V; 33.0V  0.300W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_DZ23C33  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 30.4
.MODEL DF D ( IS=4.37p RS=28.6 N=1.10
+ CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.74e-016 RS=64.5 N=3.00 )


*SRC=DZ23C36;DI_DZ23C36;Diodes;Zener 10V-50V; 36.0V  0.300W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_DZ23C36  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 33.3
.MODEL DF D ( IS=4.01p RS=28.4 N=1.10
+ CJO=24.2p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.01e-016 RS=74.5 N=3.00 )


*SRC=DZ23C39;DI_DZ23C39;Diodes;Zener 10V-50V; 39.0V  0.300W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_DZ23C39  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 36.1
.MODEL DF D ( IS=3.70p RS=28.1 N=1.10
+ CJO=23.5p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=7.39e-016 RS=114 N=3.00 )


*SRC=DZ23C3V0;DI_DZ23C3V0;Diodes;Zener <=10V; 3.00V  0.300W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_DZ23C3V0  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.507
.MODEL DF D ( IS=48.1p RS=35.4 N=1.10
+ CJO=147p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=9.61f RS=79.5 N=3.00 )


*SRC=DZ23C3V3;DI_DZ23C3V3;Diodes;Zener <=10V; 3.30V  0.300W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_DZ23C3V3  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.799
.MODEL DF D ( IS=43.7p RS=35.2 N=1.10
+ CJO=127p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.74f RS=79.5 N=3.00 )


*SRC=DZ23C3V6;DI_DZ23C3V6;Diodes;Zener <=10V; 3.60V  0.300W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_DZ23C3V6  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.12
.MODEL DF D ( IS=40.1p RS=34.9 N=1.10
+ CJO=112p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.01f RS=74.5 N=3.00 )


*SRC=DZ23C3V9;DI_DZ23C3V9;Diodes;Zener <=10V; 3.90V  0.300W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_DZ23C3V9  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.41
.MODEL DF D ( IS=37.0p RS=34.7 N=1.10
+ CJO=99.1p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=7.39f RS=74.5 N=3.00 )


*SRC=DZ23C43;DI_DZ23C43;Diodes;Zener 10V-50V; 43.0V  0.300W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_DZ23C43  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 40.0
.MODEL DF D ( IS=3.35p RS=27.8 N=1.10
+ CJO=22.7p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.71e-016 RS=134 N=3.00 )


*SRC=DZ23C47;DI_DZ23C47;Diodes;Zener 10V-50V; 47.0V  0.300W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_DZ23C47  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 43.9
.MODEL DF D ( IS=3.07p RS=27.6 N=1.10
+ CJO=22.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.14e-016 RS=154 N=3.00 )


*SRC=DZ23C4V3;DI_DZ23C4V3;Diodes;Zener <=10V; 4.30V  0.300W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_DZ23C4V3  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.80
.MODEL DF D ( IS=33.5p RS=34.4 N=1.10
+ CJO=85.6p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.71f RS=74.5 N=3.00 )


*SRC=DZ23C4V7;DI_DZ23C4V7;Diodes;Zener <=10V; 4.70V  0.300W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_DZ23C4V7  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.25
.MODEL DF D ( IS=30.7p RS=34.2 N=1.10
+ CJO=74.9p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.14f RS=64.5 N=3.00 )


*SRC=DZ23C51;DI_DZ23C51;Diodes;Zener >50V; 51.0V  0.300W   Diodes Inc. zener
*SYM=HZEN
.SUBCKT DI_DZ23C51  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 48.5
.MODEL DF D ( IS=2.83p RS=1.77 N=1.10
+ CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.65e-016 RS=141 N=3.00 )


*SRC=DZ23C5V1;DI_DZ23C5V1;Diodes;Zener <=10V; 5.10V  0.300W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_DZ23C5V1  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.74
.MODEL DF D ( IS=28.3p RS=33.9 N=1.10
+ CJO=66.2p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.65f RS=44.5 N=3.00 )


*SRC=DZ23C5V6;DI_DZ23C5V6;Diodes;Zener <=10V; 5.60V  0.300W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_DZ23C5V6  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 3.33
.MODEL DF D ( IS=25.7p RS=33.7 N=1.10
+ CJO=57.6p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.15f RS=24.5 N=3.00 )


*SRC=DZ23C6V2;DI_DZ23C6V2;Diodes;Zener <=10V; 6.20V  0.300W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_DZ23C6V2  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.12
.MODEL DF D ( IS=23.3p RS=33.4 N=1.10
+ CJO=49.4p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.65f RS=2.30 N=1.49 )


*SRC=DZ23C6V8;DI_DZ23C6V8;Diodes;Zener <=10V; 6.80V  0.300W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_DZ23C6V8  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.18
.MODEL DF D ( IS=21.2p RS=33.1 N=1.10
+ CJO=43.0p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.24f RS=3.45 N=2.23 )


*SRC=DZ23C7V5;DI_DZ23C7V5;Diodes;Zener <=10V; 7.50V  0.300W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_DZ23C7V5  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.87
.MODEL DF D ( IS=19.2p RS=32.8 N=1.10
+ CJO=37.1p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.85f RS=3.45 N=2.23 )


*SRC=DZ23C8V2;DI_DZ23C8V2;Diodes;Zener <=10V; 8.20V  0.300W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_DZ23C8V2  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 6.57
.MODEL DF D ( IS=17.6p RS=32.6 N=1.10
+ CJO=32.5p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.52f RS=3.45 N=2.23 )


*SRC=DZ23C9V1;DI_DZ23C9V1;Diodes;Zener <=10V; 9.10V  0.300W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_DZ23C9V1  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 7.46
.MODEL DF D ( IS=15.8p RS=32.3 N=1.10
+ CJO=27.8p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.17f RS=3.45 N=2.23 )


*SRC=DZL6V8AXV3;DZL6V8AXV3;Diodes;Zener <=10V; 6.80V  0.220W   DIODES INC 
*SYM=HZEN
.SUBCKT DZL6V8AXV3  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.15
.MODEL DF D ( IS=13.3p RS=31.8 N=1.10
+ CJO=65.0p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.67f RS=3.45 N=2.23 )
.ENDS


*DIODES_INC_SPICE_MODEL ZENER
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=29Apr2013
*VERSION=2


.SUBCKT MMSZ5221B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.65

.MODEL DF D ( IS=25.1p RS=33.6 N=1.10
+ CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=30f RS=3.8 N=.9 )
.ENDS


*                (c)  2013 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*SRC=MMBZ5221BS;DI_MMBZ5221BS;Diodes;Zener <=10V; 2.40V  0.200W   Diodes Inc. This model covers only one element.  There are two elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5221BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0
.MODEL DF D ( IS=34.3p RS=34.5 N=1.10
+ CJO=340p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.87f RS=26.1 N=3.00 )


*SRC=MMBZ5221BT;DI_MMBZ5221BT;Diodes;Zener <=10V; 2.40V  0.150W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5221BT  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0
.MODEL DF D ( IS=25.7p RS=33.7 N=1.10
+ CJO=205p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.15f RS=26.1 N=3.00 )


*SRC=MMBZ5221BTS;DI_MMBZ5221BTS;Diodes;Zener <=10V; 2.40V  0.200W   Diodes Inc. This model covers only one element.  There are three elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5221BTS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0
.MODEL DF D ( IS=34.3p RS=34.5 N=1.10
+ CJO=340p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.87f RS=26.1 N=3.00 )


*SRC=MMBZ5221BW;DI_MMBZ5221BW;Diodes;Zener <=10V; 2.40V  0.200W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5221BW  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0
.MODEL DF D ( IS=34.3p RS=34.5 N=1.10
+ CJO=205p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.87f RS=26.1 N=3.00 )


*SRC=MMBZ5222B;MMBZ5222B;Diodes;Zener <=10V; 2.50V  0.350W   DIODES Zener
*SYM=HZEN
.SUBCKT MMBZ5222B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0
.MODEL DF D ( IS=57.7p RS=36.0 N=1.10
+ CJO=255p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=11.5f RS=26.1 N=3.00 )
.ENDS


*SRC=MMBZ5223B;DI_MMBZ5223B;Diodes;Zener <=10V; 2.70V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_MMBZ5223B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0
.MODEL DF D ( IS=53.4p RS=35.7 N=1.10
+ CJO=172p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=10.7f RS=26.1 N=3.00 )
.ENDS


*SRC=MMBZ5223BS;DI_MMBZ5223BS;Diodes;Zener <=10V; 2.70V  0.200W   Diodes Inc. This model covers only one element.  There are two elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5223BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0
.MODEL DF D ( IS=30.5p RS=34.1 N=1.10
+ CJO=275p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.10f RS=26.1 N=3.00 )


*SRC=MMBZ5223BT;DI_MMBZ5223BT;Diodes;Zener <=10V; 2.70V  0.150W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5223BT  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0
.MODEL DF D ( IS=22.9p RS=33.3 N=1.10
+ CJO=172p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.58f RS=26.1 N=3.00 )


*SRC=MMBZ5223BTS;DI_MMBZ5223BTS;Diodes;Zener <=10V; 2.70V  0.200W   Diodes Inc. This model covers only one element.  There are three elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5223BTS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0
.MODEL DF D ( IS=30.5p RS=34.1 N=1.10
+ CJO=275p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.10f RS=26.1 N=3.00 )


*SRC=MMBZ5258BS;DI_MMBZ5258BS;Diodes;Zener 10V-50V; 36.0V  0.200W   Diodes Inc. This model covers only one element.  There are two elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5258BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 33.5
.MODEL DF D ( IS=2.29p RS=26.8 N=1.10
+ CJO=38.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.58e-016 RS=47.1 N=3.00 )


*SRC=MMBZ5258BT;DI_MMBZ5258BT;Diodes;Zener 10V-50V; 36.0V  0.150W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5258BT  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 33.5
.MODEL DF D ( IS=1.72p RS=25.9 N=1.10
+ CJO=24.2p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.43e-016 RS=47.1 N=3.00 )


*SRC=MMBZ5258BTS;DI_MMBZ5258BTS;Diodes;Zener 10V-50V; 36.0V  0.200W   Diodes Inc. This model covers only one element.  There are three elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5258BTS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 33.5
.MODEL DF D ( IS=2.29p RS=26.8 N=1.10
+ CJO=38.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.58e-016 RS=47.1 N=3.00 )


*SRC=MMBZ5258BW;DI_MMBZ5258BW;Diodes;Zener 10V-50V; 36.0V  0.200W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5258BW  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 33.5
.MODEL DF D ( IS=2.29p RS=26.8 N=1.10
+ CJO=24.2p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.58e-016 RS=47.1 N=3.00 )


*SRC=MMBZ5259B;DI_MMBZ5259B;Diodes;Zener 10V-50V; 39.0V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_MMBZ5259B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 35.1
.MODEL DF D ( IS=3.70p RS=28.1 N=1.10
+ CJO=23.5p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=7.39e-016 RS=76.1 N=3.00 )
.ENDS


*SRC=MMBZ5259BS;DI_MMBZ5259BS;Diodes;Zener 10V-50V; 39.0V  0.200W   Diodes Inc. This model covers only one element.  There are two elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5259BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 36.5
.MODEL DF D ( IS=2.11p RS=26.5 N=1.10
+ CJO=37.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.23e-016 RS=55.7 N=3.00 )


*SRC=MMBZ5259BT;DI_MMBZ5259BT;Diodes;Zener 10V-50V; 39.0V  0.150W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5259BT  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 36.5
.MODEL DF D ( IS=1.58p RS=25.7 N=1.10
+ CJO=23.5p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.17e-016 RS=55.7 N=3.00 )


*SRC=MMBZ5259BTS;DI_MMBZ5259BTS;Diodes;Zener 10V-50V; 39.0V  0.200W   Diodes Inc. This model covers only one element.  There are three elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5259BTS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 36.5
.MODEL DF D ( IS=2.11p RS=26.5 N=1.10
+ CJO=37.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.23e-016 RS=55.7 N=3.00 )


*DIODES_INC_SPICE_MODEL ZENER
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=29Apr2013
*VERSION=2


.SUBCKT MMSZ5221B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.65

.MODEL DF D ( IS=25.1p RS=33.6 N=1.10
+ CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=30f RS=3.8 N=.9 )
.ENDS


*                (c)  2013 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*SRC=DDZ10BSF;DDZ10BSF;Diodes;Zener <=10V; 9.66V  0.500W   DIODES ZENER DIODE
*SYM=HZEN
.SUBCKT DDZ10BSF  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 8.80
.MODEL DF D ( IS=21.3p RS=33.1 N=1.10
+ CJO=41.0p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.27f RS=0.437 N=1.13 )
.ENDS


*SRC=DDZ11BSF;DDZ11BSF;Diodes;Zener 10V-50V; 10.8V  0.500W   DIODES ZENER DIODE
*SYM=HZEN
.SUBCKT DDZ11BSF  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 10.2
.MODEL DF D ( IS=19.1p RS=32.8 N=1.10
+ CJO=36.3p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.81f RS=0.582 N=0.752 )
.ENDS


*SRC=DDZ12BSF;DDZ12BSF;Diodes;Zener 10V-50V; 11.7V  0.500W   DIODES ZENER DIODE
*SYM=HZEN
.SUBCKT DDZ12BSF  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 11.2
.MODEL DF D ( IS=17.6p RS=32.6 N=1.10
+ CJO=34.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.52f RS=0.527 N=0.681 )
.ENDS


*SRC=DDZ27DSF;DI_DDZ27DSF;Diodes;Zener 10V-50V; 27.0V  0.500W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DDZ27D  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 24.6
.MODEL DF D ( IS=7.63p RS=30.2 N=1.10
+ CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.53f RS=29.5 N=3.00 )
.ENDS


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=23/12/2014
*VERSION=1

.model 1SMB5929B D(IS=1n RS=0.1 CJO=1800p M=0.5 VJ=0.4 ISR=.008u N=1.05 IKF=10u BV=15 NBV=10 IBV=25m TT=40n EG=.84 TRS1=.1m) 


*         (c)  2014 Diodes Inc
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*

.SIMULATOR DEFAULT


*SRC= D3Z5V1BF; D3Z5V1BF;Diodes;Zener <=10V; 5.09V  0.500W   DIODES Zener
*SYM=HZEN
.SUBCKT D3Z5V1BF  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.66
.MODEL DF D ( IS=40.5p RS=1.92 N=1.10
+ CJO=30.0p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.09f RS=64.5 N=3.00 )
.ENDS


*TITLE=GDZ5V1LP3
*DATE=21/11/2013
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*VERSION=1

.model GDZ5V1LP3  D(IS=.21f RS=0.15 CJO=17p M=0.37 VJ=0.7 N=1 IKF=5m ISR=.05n 
+ BV=5 IBV=100u TT=30n EG=1.12 TRS1=.1m)



*                (c)  2013 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL



*SRC=DFLZ5V1Q;DI_DFLZ5V1Q;Diodes;Zener <=10V; 5.10V  1.00W   DIODES INC ZENER
*SYM=HZEN
.SUBCKT DI_DFLZ5V1Q  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.69
.MODEL DF D ( IS=80.8p RS=0.869 N=1.10
+ CJO=1.80n VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=16.2f RS=1.22 N=3.00 )


*SRC=PD3Z284C4V7;PD3Z284C4V7;Diodes;Zener <=10V; 4.70V  0.250W   DIODES ZENER DIODE
*SYM=HZEN
.SUBCKT PD3Z284C4V7  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.22
.MODEL DF D ( IS=21.9p RS=9.72 N=1.10
+ CJO=103p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.38f RS=64.5 N=3.00 )
.ENDS


*SRC=BZT52C51;DI_BZT52C51;Diodes;Zener >50V; 51.0V  0.410W   Diodes Inc. Zener 
*SYM=HZEN 
.SUBCKT DI_BZT52C51  1 2 
*        Terminals    A   K 
D1 1 2 DF 
DZ 3 1 DR 
VZ 2 3 48.3 
.MODEL DF D ( IS=3.31p RS=1.45 N=1.10 
+ CJO=24.1p VJ=1.00 M=0.330 TT=50.1n ) 
.MODEL DR D ( IS=6.62e-016 RS=84.5 N=3.00 ) 
.ENDS


*SRC=BZT52C5V1LP;DI_BZT52C5V1LP;Diodes;Zener <=10V; 5.10V  0.250W   Diodes Inc. QFN Zener
*SYM=HZEN
.SUBCKT DI_BZT52C5V1LP  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.71
.MODEL DF D ( IS=20.2p RS=33.0 N=1.10
+ CJO=132p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.04f RS=44.5 N=3.00 )
.ENDS


*SRC=MMBZ5223BW;DI_MMBZ5223BW;Diodes;Zener <=10V; 2.70V  0.200W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5223BW  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0
.MODEL DF D ( IS=30.5p RS=34.1 N=1.10
+ CJO=172p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.10f RS=26.1 N=3.00 )


*DIODES_INC_SPICE_MODEL ZENER
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=29Apr2013
*VERSION=2


.SUBCKT MMSZ5225B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.3

.MODEL DF D ( IS=25.1p RS=33.6 N=1.10
+ CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=30f RS=3.8 N=.9 )
.ENDS


*                (c)  2013 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*SRC=MMBZ5225BS;DI_MMBZ5225BS;Diodes;Zener <=10V; 3.00V  0.200W   Diodes Inc. This model covers only one element.  There are two elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5225BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.230
.MODEL DF D ( IS=27.5p RS=33.8 N=1.10
+ CJO=240p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.49f RS=26.1 N=3.00 )


*SRC=MMBZ5225BT;DI_MMBZ5225BT;Diodes;Zener <=10V; 3.00V  0.150W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5225BT  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.208
.MODEL DF D ( IS=20.6p RS=33.0 N=1.10
+ CJO=147p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.12f RS=26.1 N=3.00 )


*SRC=MMBZ5225BTS;DI_MMBZ5225BTS;Diodes;Zener <=10V; 3.00V  0.200W   Diodes Inc. This model covers only one element.  There are three elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5225BTS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.230
.MODEL DF D ( IS=27.5p RS=33.8 N=1.10
+ CJO=240p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.49f RS=26.1 N=3.00 )


*SRC=MMBZ5225BW;DI_MMBZ5225BW;Diodes;Zener <=10V; 3.00V  0.200W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5225BW  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.230
.MODEL DF D ( IS=27.5p RS=33.8 N=1.10
+ CJO=147p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.49f RS=26.1 N=3.00 )


*DIODES_INC_SPICE_MODEL ZENER
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=29Apr2013
*VERSION=2


.SUBCKT MMSZ5226B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.6

.MODEL DF D ( IS=25.1p RS=33.6 N=1.10
+ CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=30f RS=3.8 N=.9 )
.ENDS

*                (c)  2013 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*SRC=MMBZ5226BS;DI_MMBZ5226BS;Diodes;Zener <=10V; 3.30V  0.200W   Diodes Inc. This model covers only one element.  There are two elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5226BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.563
.MODEL DF D ( IS=25.0p RS=33.6 N=1.10
+ CJO=230p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.99f RS=24.1 N=3.00 )


*SRC=MMBZ5226BT;DI_MMBZ5226BT;Diodes;Zener <=10V; 3.30V  0.150W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5226BT  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.541
.MODEL DF D ( IS=18.7p RS=32.7 N=1.10
+ CJO=127p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.75f RS=24.1 N=3.00 )


*SRC=MMBZ5226BTS;DI_MMBZ5226BTS;Diodes;Zener <=10V; 3.30V  0.200W   Diodes
Inc. This model covers only one element.  There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5226BTS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.563
.MODEL DF D ( IS=25.0p RS=33.6 N=1.10
+ CJO=230p VJ=0.750 M=0.330 TT=50.1n )


*SRC=MMBZ5226BW;DI_MMBZ5226BW;Diodes;Zener <=10V; 3.30V  0.200W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5226BW  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.563
.MODEL DF D ( IS=25.0p RS=33.6 N=1.10
+ CJO=127p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.99f RS=24.1 N=3.00 )


*DIODES_INC_SPICE_MODEL ZENER
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=29Apr2013
*VERSION=2

.SUBCKT MMSZ5227B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.9

.MODEL DF D ( IS=25.1p RS=33.6 N=1.10
+ CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=30f RS=3.8 N=.9 )
.ENDS

*                (c)  2013 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*SRC=MMBZ5227BS;DI_MMBZ5227BS;Diodes;Zener <=10V; 3.60V  0.200W   Diodes Inc. This model covers only one element.  There are two elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5227BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.936
.MODEL DF D ( IS=22.9p RS=33.3 N=1.10
+ CJO=190p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.58f RS=20.1 N=3.00 )


*SRC=MMBZ5227BT;DI_MMBZ5227BT;Diodes;Zener <=10V; 3.60V  0.150W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5227BT  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.914
.MODEL DF D ( IS=17.2p RS=32.5 N=1.10
+ CJO=112p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.43f RS=20.1 N=3.00 )


*SRC=MMBZ5227BTS;DI_MMBZ5227BTS;Diodes;Zener <=10V; 3.60V  0.200W   Diodes Inc. This model covers only one element.  There are three elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5227BTS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.936
.MODEL DF D ( IS=22.9p RS=33.3 N=1.10
+ CJO=190p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.58f RS=20.1 N=3.00 )


*SRC=MMBZ5227BW;DI_MMBZ5227BW;Diodes;Zener <=10V; 3.60V  0.200W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5227BW  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.936
.MODEL DF D ( IS=22.9p RS=33.3 N=1.10
+ CJO=112p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.58f RS=20.1 N=3.00 )


*SRC=MMBZ5228B;DI_MMBZ5228B;Diodes;Zener <=10V; 3.90V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_MMBZ5228B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.29
.MODEL DF D ( IS=37.0p RS=34.7 N=1.10
+ CJO=99.1p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=7.39f RS=19.1 N=3.00 )
.ENDS


*SRC=MMBZ5228BS;DI_MMBZ5228BS;Diodes;Zener <=10V; 3.90V  0.200W   Diodes Inc. This model covers only one element.  There are two elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5228BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.25
.MODEL DF D ( IS=21.1p RS=33.1 N=1.10
+ CJO=180p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.23f RS=19.1 N=3.00 )


*SRC=MMBZ5228BT;DI_MMBZ5228BT;Diodes;Zener <=10V; 3.90V  0.150W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5228BT  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.23
.MODEL DF D ( IS=15.8p RS=32.3 N=1.10
+ CJO=99.1p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.17f RS=19.1 N=3.00 )


*SRC=MMBZ5228BTS;DI_MMBZ5228BTS;Diodes;Zener <=10V; 3.90V  0.200W   Diodes Inc. This model covers only one element.  There are three elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5228BTS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.25
.MODEL DF D ( IS=21.1p RS=33.1 N=1.10
+ CJO=180p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.23f RS=19.1 N=3.00 )


*SRC=MMBZ5228BW;DI_MMBZ5228BW;Diodes;Zener <=10V; 3.90V  0.200W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5228BW  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.25
.MODEL DF D ( IS=21.1p RS=33.1 N=1.10
+ CJO=99.1p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.23f RS=19.1 N=3.00 )


*SRC=MMBZ5229B;DI_MMBZ5229B;Diodes;Zener <=10V; 4.30V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_MMBZ5229B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.71
.MODEL DF D ( IS=33.5p RS=34.4 N=1.10
+ CJO=85.6p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.71f RS=18.1 N=3.00 )
.ENDS


*SRC=MMBZ5229BS;DI_MMBZ5229BS;Diodes;Zener <=10V; 4.30V  0.200W   Diodes Inc. This model covers only one element.  There are two elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5229BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.66
.MODEL DF D ( IS=19.2p RS=32.8 N=1.10
+ CJO=170p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.83f RS=18.1 N=3.00 )


*SRC=MMBZ5229BT;DI_MMBZ5229BT;Diodes;Zener <=10V; 4.30V  0.150W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5229BT  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.64
.MODEL DF D ( IS=14.4p RS=32.0 N=1.10
+ CJO=85.6p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.87f RS=18.1 N=3.00 )


*SRC=MMBZ5229BTS;DI_MMBZ5229BTS;Diodes;Zener <=10V; 4.30V  0.200W   Diodes Inc. This model covers only one element.  There are three elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5229BTS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.66
.MODEL DF D ( IS=19.2p RS=32.8 N=1.10
+ CJO=170p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.83f RS=18.1 N=3.00 )


*SRC=MMBZ5229BW;DI_MMBZ5229BW;Diodes;Zener <=10V; 4.30V  0.200W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5229BW  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.66
.MODEL DF D ( IS=19.2p RS=32.8 N=1.10
+ CJO=85.6p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.83f RS=18.1 N=3.00 )


*SRC=MMBZ5230B;DI_MMBZ5230B;Diodes;Zener <=10V; 4.70V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_MMBZ5230B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.16
.MODEL DF D ( IS=30.7p RS=34.2 N=1.10
+ CJO=74.9p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.14f RS=15.1 N=3.00 )
.ENDS


*SRC=MMBZ5230BS;DI_MMBZ5230BS;Diodes;Zener <=10V; 4.70V  0.200W   Diodes Inc. This model covers only one element.  There are two elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5230BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.12
.MODEL DF D ( IS=17.5p RS=32.6 N=1.10
+ CJO=160p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.51f RS=15.1 N=3.00 )


*SRC=MMBZ5230BT;DI_MMBZ5230BT;Diodes;Zener <=10V; 4.70V  0.150W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5230BT  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.09
.MODEL DF D ( IS=13.1p RS=31.7 N=1.10
+ CJO=74.9p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.63f RS=15.1 N=3.00 )


*SRC=MMBZ5230BTS;DI_MMBZ5230BTS;Diodes;Zener <=10V; 4.70V  0.200W   Diodes Inc. This model covers only one element.  There are three elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5230BTS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.12
.MODEL DF D ( IS=17.5p RS=32.6 N=1.10
+ CJO=160p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.51f RS=15.1 N=3.00 )


*SRC=MMBZ5230BW;DI_MMBZ5230BW;Diodes;Zener <=10V; 4.70V  0.200W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5230BW  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.12
.MODEL DF D ( IS=17.5p RS=32.6 N=1.10
+ CJO=74.9p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.51f RS=15.1 N=3.00 )


*SRC=MMBZ5231B;DI_MMBZ5231B;Diodes;Zener <=10V; 5.10V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_MMBZ5231B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.59
.MODEL DF D ( IS=28.3p RS=33.9 N=1.10
+ CJO=66.2p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.65f RS=13.1 N=3.00 )
.ENDS


*SRC=MMBZ5231BS;DI_MMBZ5231BS;Diodes;Zener <=10V; 5.10V  0.200W   Diodes Inc. This model covers only one element.  There are two elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5231BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.55
.MODEL DF D ( IS=16.2p RS=32.3 N=1.10
+ CJO=145p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.23f RS=13.1 N=3.00 )


*SRC=MMBZ5231BT;DI_MMBZ5231BT;Diodes;Zener <=10V; 5.10V  0.150W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5231BT  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.53
.MODEL DF D ( IS=12.1p RS=31.5 N=1.10
+ CJO=66.2p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.42f RS=13.1 N=3.00 )


*SRC=MMBZ5231BTS;DI_MMBZ5231BTS;Diodes;Zener <=10V; 5.10V  0.200W   Diodes Inc. This model covers only one element.  There are three elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5231BTS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.55
.MODEL DF D ( IS=16.2p RS=32.3 N=1.10
+ CJO=145p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.23f RS=13.1 N=3.00 )


*SRC=MMBZ5231BW;DI_MMBZ5231BW;Diodes;Zener <=10V; 5.10V  0.200W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5231BW  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.55
.MODEL DF D ( IS=16.2p RS=32.3 N=1.10
+ CJO=66.2p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.23f RS=13.1 N=3.00 )


*SRC=MMBZ5232B;DI_MMBZ5232B;Diodes;Zener <=10V; 5.60V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_MMBZ5232B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 3.21
.MODEL DF D ( IS=25.7p RS=33.7 N=1.10
+ CJO=57.6p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.15f RS=7.11 N=3.00 )
.ENDS


*SRC=MMBZ5232BS;DI_MMBZ5232BS;Diodes;Zener <=10V; 5.60V  0.200W   Diodes Inc. This model covers only one element.  There are two elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5232BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 3.16
.MODEL DF D ( IS=14.7p RS=32.1 N=1.10
+ CJO=130p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.94f RS=7.11 N=3.00 )


*SRC=MMBZ5232BT;DI_MMBZ5232BT;Diodes;Zener <=10V; 5.60V  0.150W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5232BT  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 3.14
.MODEL DF D ( IS=11.0p RS=31.2 N=1.10
+ CJO=57.6p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.21f RS=7.11 N=3.00 )


*SRC=MMBZ5232BTS;DI_MMBZ5232BTS;Diodes;Zener <=10V; 5.60V  0.200W   Diodes Inc. This model covers only one element.  There are three elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5232BTS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 3.16
.MODEL DF D ( IS=14.7p RS=32.1 N=1.10
+ CJO=130p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.94f RS=7.11 N=3.00 )


*SRC=MMBZ5232BW;DI_MMBZ5232BW;Diodes;Zener <=10V; 5.60V  0.200W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5232BW  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 3.16
.MODEL DF D ( IS=14.7p RS=32.1 N=1.10
+ CJO=57.6p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.94f RS=7.11 N=3.00 )


*SRC=MMBZ5233B;DI_MMBZ5233B;Diodes;Zener <=10V; 6.00V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_MMBZ5233B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 3.68
.MODEL DF D ( IS=24.0p RS=33.5 N=1.10
+ CJO=51.9p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.81f RS=3.11 N=3.00 )
.ENDS


*SRC=MMBZ5233BS;DI_MMBZ5233BS;Diodes;Zener <=10V; 6.00V  0.200W   Diodes Inc. This model covers only one element.  There are two elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5233BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 3.64
.MODEL DF D ( IS=13.7p RS=31.9 N=1.10
+ CJO=125p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.75f RS=3.11 N=3.00 )


*SRC=MMBZ5233BTS;DI_MMBZ5233BTS;Diodes;Zener <=10V; 6.00V  0.200W   Diodes Inc. This model covers only one element.  There are three elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5233BTS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 3.64
.MODEL DF D ( IS=13.7p RS=31.9 N=1.10
+ CJO=125p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.75f RS=3.11 N=3.00 )


*SRC=MMBZ5234B;DI_MMBZ5234B;Diodes;Zener <=10V; 6.20V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_MMBZ5234B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 3.88
.MODEL DF D ( IS=23.3p RS=33.4 N=1.10
+ CJO=49.4p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.65f RS=3.11 N=3.00 )
.ENDS


*SRC=MMBZ5234BS;DI_MMBZ5234BS;Diodes;Zener <=10V; 6.20V  0.200W   Diodes Inc. This model covers only one element.  There are two elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5234BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 3.83
.MODEL DF D ( IS=13.3p RS=31.8 N=1.10
+ CJO=120p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.66f RS=3.11 N=3.00 )


*SRC=MMBZ5234BT;DI_MMBZ5234BT;Diodes;Zener <=10V; 6.20V  0.150W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5234BT  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 3.81
.MODEL DF D ( IS=9.97p RS=31.0 N=1.10
+ CJO=49.4p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.99f RS=3.11 N=3.00 )


*SRC=MMBZ5234BTS;DI_MMBZ5234BTS;Diodes;Zener <=10V; 6.20V  0.200W   Diodes Inc. This model covers only one element.  There are three elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5234BTS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 3.83
.MODEL DF D ( IS=13.3p RS=31.8 N=1.10
+ CJO=120p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.66f RS=3.11 N=3.00 )


*SRC=MMBZ5234BW;DI_MMBZ5234BW;Diodes;Zener <=10V; 6.20V  0.200W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5234BW  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 3.83
.MODEL DF D ( IS=13.3p RS=31.8 N=1.10
+ CJO=49.4p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.66f RS=3.11 N=3.00 )


*SRC=MMBZ5235B;DI_MMBZ5235B;Diodes;Zener <=10V; 6.80V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_MMBZ5235B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 4.53
.MODEL DF D ( IS=21.2p RS=33.1 N=1.10
+ CJO=43.0p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.24f RS=1.15 N=2.97 )
.ENDS


*SRC=MMBZ5235BS;DI_MMBZ5235BS;Diodes;Zener <=10V; 6.80V  0.200W   Diodes Inc. This model covers only one element.  There are two elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5235BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 4.49
.MODEL DF D ( IS=12.1p RS=31.5 N=1.10
+ CJO=110p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.42f RS=1.15 N=2.97 )


*SRC=MMBZ5235BT;DI_MMBZ5235BT;Diodes;Zener <=10V; 6.80V  0.150W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5235BT  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 4.47
.MODEL DF D ( IS=9.09p RS=30.7 N=1.10
+ CJO=43.0p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.82f RS=1.15 N=2.97 )


*SRC=MMBZ5235BTS;DI_MMBZ5235BTS;Diodes;Zener <=10V; 6.80V  0.200W   Diodes Inc. This model covers only one element.  There are three elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5235BTS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 4.49
.MODEL DF D ( IS=12.1p RS=31.5 N=1.10
+ CJO=110p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.42f RS=1.15 N=2.97 )


*SRC=MMBZ5235BW;DI_MMBZ5235BW;Diodes;Zener <=10V; 6.80V  0.200W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5235BW  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 4.49
.MODEL DF D ( IS=12.1p RS=31.5 N=1.10
+ CJO=43.0p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.42f RS=1.15 N=2.97 )


*SRC=MMBZ5236B;DI_MMBZ5236B;Diodes;Zener <=10V; 7.50V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_MMBZ5236B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.18
.MODEL DF D ( IS=19.2p RS=32.8 N=1.10
+ CJO=37.1p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.85f RS=2.12 N=3.00 )
.ENDS


*SRC=MMBZ5236BS;DI_MMBZ5236BS;Diodes;Zener <=10V; 7.50V  0.200W   Diodes Inc. This model covers only one element.  There are two elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5236BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.14
.MODEL DF D ( IS=11.0p RS=31.2 N=1.10
+ CJO=95.0p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.20f RS=2.12 N=3.00 )


*SRC=MMBZ5236BT;DI_MMBZ5236BT;Diodes;Zener <=10V; 7.50V  0.150W   Diodes
Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5236BT  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.12
.MODEL DF D ( IS=8.24p RS=30.4 N=1.10
+ CJO=37.1p VJ=0.750 M=0.330 TT=50.1n )


*SRC=MMBZ5236BTS;DI_MMBZ5236BTS;Diodes;Zener <=10V; 7.50V  0.200W   Diodes Inc. This model covers only one element.  There are three elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5236BTS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.14
.MODEL DF D ( IS=11.0p RS=31.2 N=1.10
+ CJO=95.0p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.20f RS=2.12 N=3.00 )


*SRC=MMBZ5236BW;DI_MMBZ5236BW;Diodes;Zener <=10V; 7.50V  0.200W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5236BW  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.14
.MODEL DF D ( IS=11.0p RS=31.2 N=1.10
+ CJO=37.1p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.20f RS=2.12 N=3.00 )


*SRC=MMBZ5237B;DI_MMBZ5237B;Diodes;Zener <=10V; 8.20V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_MMBZ5237B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.84
.MODEL DF D ( IS=17.6p RS=32.6 N=1.10
+ CJO=32.5p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.52f RS=4.11 N=3.00 )
.ENDS


*SRC=MMBZ5237BS;DI_MMBZ5237BS;Diodes;Zener <=10V; 8.20V  0.200W   Diodes Inc. This model covers only one element.  There are two elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5237BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.79
.MODEL DF D ( IS=10.0p RS=31.0 N=1.10
+ CJO=88.0p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.01f RS=4.11 N=3.00 )


*SRC=MMBZ5237BT;DI_MMBZ5237BT;Diodes;Zener <=10V; 8.20V  0.150W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5237BT  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.77
.MODEL DF D ( IS=7.54p RS=30.2 N=1.10
+ CJO=32.5p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.51f RS=4.11 N=3.00 )


*SRC=MMBZ5237BTS;DI_MMBZ5237BTS;Diodes;Zener <=10V; 8.20V  0.200W   Diodes Inc. This model covers only one element.  There are three elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5237BTS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.79
.MODEL DF D ( IS=10.0p RS=31.0 N=1.10
+ CJO=88.0p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.01f RS=4.11 N=3.00 )


*SRC=MMBZ5237BW;DI_MMBZ5237BW;Diodes;Zener <=10V; 8.20V  0.200W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5237BW  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.79
.MODEL DF D ( IS=10.0p RS=31.0 N=1.10
+ CJO=32.5p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.01f RS=4.11 N=3.00 )


*SRC=MMBZ5238B;DI_MMBZ5238B;Diodes;Zener <=10V; 8.70V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_MMBZ5238B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 6.33
.MODEL DF D ( IS=16.6p RS=32.4 N=1.10
+ CJO=29.7p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.31f RS=4.11 N=3.00 )
.ENDS


*SRC=MMBZ5238BS;DI_MMBZ5238BS;Diodes;Zener <=10V; 8.70V  0.200W   Diodes Inc. This model covers only one element.  There are two elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5238BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 6.29
.MODEL DF D ( IS=9.47p RS=30.8 N=1.10
+ CJO=83.0p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.89f RS=4.11 N=3.00 )


*SRC=MMBZ5238BTS;DI_MMBZ5238BTS;Diodes;Zener <=10V; 8.70V  0.200W   Diodes Inc. This model covers only one element.  There are three elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5238BTS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 6.29
.MODEL DF D ( IS=9.47p RS=30.8 N=1.10
+ CJO=83.0p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.89f RS=4.11 N=3.00 )


*SRC=MMBZ5239B;DI_MMBZ5239B;Diodes;Zener <=10V; 9.10V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_MMBZ5239B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 6.69
.MODEL DF D ( IS=15.8p RS=32.3 N=1.10
+ CJO=27.8p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.17f RS=6.11 N=3.00 )
.ENDS


*SRC=MMBZ5239BS;DI_MMBZ5239BS;Diodes;Zener <=10V; 9.10V  0.200W   Diodes Inc. This model covers only one element.  There are two elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5239BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 6.64
.MODEL DF D ( IS=9.05p RS=30.7 N=1.10
+ CJO=80.0p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.81f RS=6.11 N=3.00 )


*SRC=MMBZ5239BT;DI_MMBZ5239BT;Diodes;Zener <=10V; 9.10V  0.150W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5239BT  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 6.62
.MODEL DF D ( IS=6.79p RS=29.9 N=1.10
+ CJO=27.8p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.36f RS=6.11 N=3.00 )


*SRC=MMBZ5239BTS;DI_MMBZ5239BTS;Diodes;Zener <=10V; 9.10V  0.200W   Diodes Inc. This model covers only one element.  There are three elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5239BTS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 6.64
.MODEL DF D ( IS=9.05p RS=30.7 N=1.10
+ CJO=80.0p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.81f RS=6.11 N=3.00 )


*SRC=MMBZ5239BW;DI_MMBZ5239BW;Diodes;Zener <=10V; 9.10V  0.200W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5239BW  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 6.64
.MODEL DF D ( IS=9.05p RS=30.7 N=1.10
+ CJO=27.8p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.81f RS=6.11 N=3.00 )


*SRC=MMBZ5240B;DI_MMBZ5240B;Diodes;Zener <=10V; 10.0V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_MMBZ5240B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 7.44
.MODEL DF D ( IS=14.4p RS=32.0 N=1.10
+ CJO=24.1p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.88f RS=13.1 N=3.00 )
.ENDS


*SRC=MMBZ5240BS;DI_MMBZ5240BS;Diodes;Zener <=10V; 10.0V  0.200W   Diodes Inc. This model covers only one element.  There are two elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5240BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 7.40
.MODEL DF D ( IS=8.24p RS=30.4 N=1.10
+ CJO=77.0p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.65f RS=13.1 N=3.00 )


*SRC=MMBZ5240BT;DI_MMBZ5240BT;Diodes;Zener <=10V; 10.0V  0.150W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5240BT  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 7.37
.MODEL DF D ( IS=6.18p RS=29.6 N=1.10
+ CJO=24.1p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.24f RS=13.1 N=3.00 )


*SRC=MMBZ5240BTS;DI_MMBZ5240BTS;Diodes;Zener <=10V; 10.0V  0.200W   Diodes Inc. This model covers only one element.  There are three elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5240BTS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 7.40
.MODEL DF D ( IS=8.24p RS=30.4 N=1.10
+ CJO=77.0p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.65f RS=13.1 N=3.00 )


*SRC=MMBZ5240BW;DI_MMBZ5240BW;Diodes;Zener <=10V; 10.0V  0.200W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5240BW  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 7.40
.MODEL DF D ( IS=8.24p RS=30.4 N=1.10
+ CJO=24.1p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.65f RS=13.1 N=3.00 )


*SRC=MMBZ5241B;DI_MMBZ5241B;Diodes;Zener 10V-50V; 11.0V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_MMBZ5241B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 8.33
.MODEL DF D ( IS=13.1p RS=31.7 N=1.10
+ CJO=45.2p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.62f RS=18.1 N=3.00 )
.ENDS


*SRC=MMBZ5241BS;DI_MMBZ5241BS;Diodes;Zener 10V-50V; 11.0V  0.200W   Diodes Inc. This model covers only one element.  There are two elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5241BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 8.29
.MODEL DF D ( IS=7.49p RS=30.1 N=1.10
+ CJO=75.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.50f RS=18.1 N=3.00 )


*SRC=MMBZ5241BT;DI_MMBZ5241BT;Diodes;Zener 10V-50V; 11.0V  0.150W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5241BT  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 8.27
.MODEL DF D ( IS=5.62p RS=29.3 N=1.10
+ CJO=45.2p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.12f RS=18.1 N=3.00 )


*SRC=MMBZ5241BTS;DI_MMBZ5241BTS;Diodes;Zener 10V-50V; 11.0V  0.200W   Diodes Inc. This model covers only one element.  There are three elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5241BTS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 8.29
.MODEL DF D ( IS=7.49p RS=30.1 N=1.10
+ CJO=75.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.50f RS=18.1 N=3.00 )


*SRC=MMBZ5241BW;DI_MMBZ5241BW;Diodes;Zener 10V-50V; 11.0V  0.200W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5241BW  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 8.29
.MODEL DF D ( IS=7.49p RS=30.1 N=1.10
+ CJO=45.2p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.50f RS=18.1 N=3.00 )


*SRC=MMBZ524B;DI_MMBZ5242B;Diodes;Zener 10V-50V; 12.0V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_MMBZ5242B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 9.17
.MODEL DF D ( IS=12.0p RS=31.5 N=1.10
+ CJO=42.7p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.40f RS=26.1 N=3.00 )
.ENDS


*SRC=MMBZ5242BS;DI_MMBZ5242BS;Diodes;Zener 10V-50V; 12.0V  0.200W   Diodes Inc. This model covers only one element.  There are two elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5242BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 9.12
.MODEL DF D ( IS=6.87p RS=29.9 N=1.10
+ CJO=74.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.37f RS=26.1 N=3.00 )


*SRC=MMBZ5242BT;DI_MMBZ5242BT;Diodes;Zener 10V-50V; 12.0V  0.150W   Diodes
Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5242BT  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 9.10
.MODEL DF D ( IS=5.15p RS=29.1 N=1.10
+ CJO=42.7p VJ=1.00 M=0.330 TT=50.1n )


*SRC=MMBZ5242BTS;DI_MMBZ5242BTS;Diodes;Zener 10V-50V; 12.0V  0.200W   Diodes Inc. This model covers only one element.  There are three elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5242BTS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 9.12
.MODEL DF D ( IS=6.87p RS=29.9 N=1.10
+ CJO=74.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.37f RS=26.1 N=3.00 )


*SRC=MMBZ5242BW;DI_MMBZ5242BW;Diodes;Zener 10V-50V; 12.0V  0.200W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5242BW  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 9.12
.MODEL DF D ( IS=6.87p RS=29.9 N=1.10
+ CJO=42.7p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.37f RS=26.1 N=3.00 )


*SRC=MMBZ5243B;DI_MMBZ5243B;Diodes;Zener 10V-50V; 13.0V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_MMBZ5243B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 10.5
.MODEL DF D ( IS=11.1p RS=31.3 N=1.10
+ CJO=40.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.22f RS=9.11 N=3.00 )
.ENDS


*SRC=MMBZ5243BS;DI_MMBZ5243BS;Diodes;Zener 10V-50V; 13.0V  0.200W   Diodes Inc. This model covers only one element.  There are two elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5243BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 10.7
.MODEL DF D ( IS=6.34p RS=29.7 N=1.10
+ CJO=66.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.27f RS=4.82 N=3.00 )


*SRC=MMBZ5243BT;DI_MMBZ5243BT;Diodes;Zener 10V-50V; 13.0V  0.150W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5243BT  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 10.5
.MODEL DF D ( IS=4.75p RS=28.8 N=1.10
+ CJO=40.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=9.51e-016 RS=21.8 N=3.00 )


*SRC=MMBZ5243BTS;DI_MMBZ5243BTS;Diodes;Zener 10V-50V; 13.0V  0.200W   Diodes Inc. This model covers only one element.  There are three elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5243BTS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 10.7
.MODEL DF D ( IS=6.34p RS=29.7 N=1.10
+ CJO=66.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.27f RS=4.82 N=3.00 )


*SRC=MMBZ5243BW;DI_MMBZ5243BW;Diodes;Zener 10V-50V; 13.0V  0.200W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5243BW  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 10.7
.MODEL DF D ( IS=6.34p RS=29.7 N=1.10
+ CJO=40.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.27f RS=4.82 N=3.00 )


*SRC=MMBZ5244B;DI_MMBZ5244B;Diodes;Zener 10V-50V; 14.0V  0.350W   Diodes Inc. Zener
*SYM=HZEN
.SUBCKT DI_MMBZ5244B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 11.7
.MODEL DF D ( IS=10.3p RS=1.77 N=1.10
+ CJO=31.4p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.06f RS=6.37 N=3.00 )


*SRC=MMBZ5245B;DI_MMBZ5245B;Diodes;Zener 10V-50V; 15.0V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_MMBZ5245B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 12.4
.MODEL DF D ( IS=9.61p RS=30.8 N=1.10
+ CJO=37.2p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.92f RS=12.1 N=3.00 )
.ENDS


*SRC=MMBZ5245BS;DI_MMBZ5245BS;Diodes;Zener 10V-50V; 15.0V  0.200W   Diodes Inc. This model covers only one element.  There are two elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5245BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 12.6
.MODEL DF D ( IS=5.49p RS=29.3 N=1.10
+ CJO=60.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.10f RS=6.86 N=3.00 )


*SRC=MMBZ5245BT;DI_MMBZ5245BT;Diodes;Zener 10V-50V; 15.0V  0.150W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5245BT  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 12.4
.MODEL DF D ( IS=4.12p RS=28.4 N=1.10
+ CJO=40.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.24e-016 RS=28.1 N=3.00 )


*SRC=MMBZ5245BTS;DI_MMBZ5245BTS;Diodes;Zener 10V-50V; 15.0V  0.200W   Diodes Inc. This model covers only one element.  There are three elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5245BTS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 12.6
.MODEL DF D ( IS=5.49p RS=29.3 N=1.10
+ CJO=60.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.10f RS=6.86 N=3.00 )


*SRC=MMBZ5245BW;DI_MMBZ5245BW;Diodes;Zener 10V-50V; 15.0V  0.200W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5245BW  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 12.6
.MODEL DF D ( IS=5.49p RS=29.3 N=1.10
+ CJO=37.2p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.10f RS=6.86 N=3.00 )


*SRC=MMBZ5246B;DI_MMBZ5246B;Diodes;Zener 10V-50V; 16.0V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_MMBZ5246B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 13.4
.MODEL DF D ( IS=9.01p RS=30.7 N=1.10
+ CJO=35.8p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.80f RS=13.1 N=3.00 )
.ENDS


*SRC=MMBZ5246BS;DI_MMBZ5246BS;Diodes;Zener 10V-50V; 16.0V  0.200W   Diodes Inc. This model covers only one element.  There are two elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5246BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 13.6
.MODEL DF D ( IS=5.15p RS=29.1 N=1.10
+ CJO=58.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.03f RS=7.04 N=3.00 )


*SRC=MMBZ5246BT;DI_MMBZ5246BT;Diodes;Zener 10V-50V; 16.0V  0.150W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5246BT  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 13.6
.MODEL DF D ( IS=3.86p RS=28.2 N=1.10
+ CJO=35.8p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=7.73e-016 RS=7.04 N=3.00 )


*SRC=MMBZ5246BTS;DI_MMBZ5246BTS;Diodes;Zener 10V-50V; 16.0V  0.200W   Diodes Inc. This model covers only one element.  There are three elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5246BTS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 13.6
.MODEL DF D ( IS=5.15p RS=29.1 N=1.10
+ CJO=58.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.03f RS=7.04 N=3.00 )


*SRC=MMBZ5246BW;DI_MMBZ5246BW;Diodes;Zener 10V-50V; 16.0V  0.200W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5246BW  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 13.6
.MODEL DF D ( IS=5.15p RS=29.1 N=1.10
+ CJO=35.8p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.03f RS=7.04 N=3.00 )


*SRC=MMBZ5248B;DI_MMBZ5248B;Diodes;Zener 10V-50V; 18.0V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_MMBZ5248B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 15.3
.MODEL DF D ( IS=8.01p RS=30.3 N=1.10
+ CJO=33.5p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.60f RS=17.1 N=3.00 )
.ENDS


*SRC=MMBZ5248BS;DI_MMBZ5248BS;Diodes;Zener 10V-50V; 18.0V  0.200W   Diodes Inc. This model covers only one element.  There are two elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5248BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 15.6
.MODEL DF D ( IS=4.58p RS=28.7 N=1.10
+ CJO=53.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=9.16e-016 RS=9.90 N=3.00 )


SRC=MMBZ5248BT;DI_MMBZ5248BT;Diodes;Zener 10V-50V; 18.0V  0.150W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5248BT  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 15.6
.MODEL DF D ( IS=3.43p RS=27.9 N=1.10
+ CJO=33.5p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.87e-016 RS=9.90 N=3.00 )
.ENDS


*SRC=MMBZ5248BTS;DI_MMBZ5248BTS;Diodes;Zener 10V-50V; 18.0V  0.200W   Diodes Inc. This model covers only one element.  There are three elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5248BTS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 15.6
.MODEL DF D ( IS=4.58p RS=28.7 N=1.10
+ CJO=53.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=9.16e-016 RS=9.90 N=3.00 )


*SRC=MMBZ5248BW;DI_MMBZ5248BW;Diodes;Zener 10V-50V; 18.0V  0.200W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5248BW  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 15.6
.MODEL DF D ( IS=4.58p RS=28.7 N=1.10
+ CJO=33.5p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=9.16e-016 RS=9.90 N=3.00 )


*SRC=MMBZ5250B;DI_MMBZ5250B;Diodes;Zener 10V-50V; 20.0V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_MMBZ5250B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 17.2
.MODEL DF D ( IS=7.21p RS=30.0 N=1.10
+ CJO=31.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.44f RS=21.1 N=3.00 )
.ENDS


*SRC=MMBZ5250BS;DI_MMBZ5250BS;Diodes;Zener 10V-50V; 20.0V  0.200W   Diodes Inc. This model covers only one element.  There are two elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5250BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 17.6
.MODEL DF D ( IS=4.12p RS=28.4 N=1.10
+ CJO=50.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.24e-016 RS=12.5 N=3.00 )



*SRC=MMBZ5250BT;DI_MMBZ5250BT;Diodes;Zener 10V-50V; 20.0V  0.150W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5250BT  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 17.6
.MODEL DF D ( IS=3.09p RS=27.6 N=1.10
+ CJO=31.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.18e-016 RS=12.5 N=3.00 )


*SRC=MMBZ5250BTS;DI_MMBZ5250BTS;Diodes;Zener 10V-50V; 20.0V  0.200W   Diodes Inc. This model covers only one element.  There are three elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5250BTS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 17.6
.MODEL DF D ( IS=4.12p RS=28.4 N=1.10
+ CJO=50.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.24e-016 RS=12.5 N=3.00 )


*SRC=MMBZ5250BW;DI_MMBZ5250BW;Diodes;Zener 10V-50V; 20.0V  0.200W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5250BW  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 17.6
.MODEL DF D ( IS=4.12p RS=28.4 N=1.10
+ CJO=31.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.24e-016 RS=12.5 N=3.00 )


*SRC=MMBZ5251B;DI_MMBZ5251B;Diodes;Zener 10V-50V; 22.0V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_MMBZ5251B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 19.1
.MODEL DF D ( IS=6.55p RS=29.8 N=1.10
+ CJO=30.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.31f RS=25.1 N=3.00 )
.ENDS


*SRC=MMBZ5251BS;DI_MMBZ5251BS;Diodes;Zener 10V-50V; 22.0V  0.200W   Diodes Inc. This model covers only one element.  There are two elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5251BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 19.6
.MODEL DF D ( IS=3.75p RS=28.2 N=1.10
+ CJO=48.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=7.49e-016 RS=15.1 N=3.00 )


*SRC=MMBZ5251BT;DI_MMBZ5251BT;Diodes;Zener 10V-50V; 22.0V  0.150W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5251BT  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 19.6
.MODEL DF D ( IS=2.81p RS=27.3 N=1.10
+ CJO=30.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.62e-016 RS=15.1 N=3.00 )


*SRC=MMBZ5251BTS;DI_MMBZ5251BTS;Diodes;Zener 10V-50V; 22.0V  0.200W   Diodes Inc. This model covers only one element.  There are three elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5251BTS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 19.6
.MODEL DF D ( IS=3.75p RS=28.2 N=1.10
+ CJO=48.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=7.49e-016 RS=15.1 N=3.00 )


*SRC=MMBZ5251BW;DI_MMBZ5251BW;Diodes;Zener 10V-50V; 22.0V  0.200W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5251BW  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 19.6
.MODEL DF D ( IS=3.75p RS=28.2 N=1.10
+ CJO=30.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=7.49e-016 RS=15.1 N=3.00 )


*SRC=MMBZ5252B;DI_MMBZ5252B;Diodes;Zener 10V-50V; 24.0V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_MMBZ5252B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 21.1
.MODEL DF D ( IS=6.01p RS=29.5 N=1.10
+ CJO=28.9p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.20f RS=29.1 N=3.00 )
.ENDS


*SRC=MMBZ5252BS;DI_MMBZ5252BS;Diodes;Zener 10V-50V; 24.0V  0.200W   Diodes Inc. This model covers only one element.  There are two elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5252BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 21.6
.MODEL DF D ( IS=3.43p RS=27.9 N=1.10
+ CJO=45.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.87e-016 RS=18.1 N=3.00 )


*SRC=MMBZ5252BT;DI_MMBZ5252BT;Diodes;Zener 10V-50V; 24.0V  0.150W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5252BT  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 21.6
.MODEL DF D ( IS=2.57p RS=27.1 N=1.10
+ CJO=28.9p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.15e-016 RS=18.1 N=3.00 )


*SRC=MMBZ5252BTS;DI_MMBZ5252BTS;Diodes;Zener 10V-50V; 24.0V  0.200W   Diodes Inc. This model covers only one element.  There are three elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5252BTS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 21.6
.MODEL DF D ( IS=3.43p RS=27.9 N=1.10
+ CJO=45.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.87e-016 RS=18.1 N=3.00 )


*SRC=MMBZ5252BW;DI_MMBZ5252BW;Diodes;Zener 10V-50V; 24.0V  0.200W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5252BW  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 21.6
.MODEL DF D ( IS=3.43p RS=27.9 N=1.10
+ CJO=28.9p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.87e-016 RS=18.1 N=3.00 )


*SRC=MMBZ5254B;DI_MMBZ5254B;Diodes;Zener 10V-50V; 27.0V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_MMBZ5254B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 23.9
.MODEL DF D ( IS=5.34p RS=29.2 N=1.10
+ CJO=27.3p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.07f RS=37.1 N=3.00 )
.ENDS


*SRC=MMBZ5254BS;DI_MMBZ5254BS;Diodes;Zener 10V-50V; 27.0V  0.200W   Diodes Inc. This model covers only one element.  There are two elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5254BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 24.6
.MODEL DF D ( IS=3.05p RS=27.6 N=1.10
+ CJO=42.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.10e-016 RS=25.5 N=3.00 )


*SRC=MMBZ5254BT;DI_MMBZ5254BT;Diodes;Zener 10V-50V; 27.0V  0.150W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5254BT  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 24.5
.MODEL DF D ( IS=2.29p RS=26.8 N=1.10
+ CJO=27.3p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.58e-016 RS=25.5 N=3.00 )


*SRC=MMBZ5254BTS;DI_MMBZ5254BTS;Diodes;Zener 10V-50V; 27.0V  0.200W   Diodes Inc. This model covers only one element.  There are three elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5254BTS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 24.6
.MODEL DF D ( IS=3.05p RS=27.6 N=1.10
+ CJO=42.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.10e-016 RS=25.5 N=3.00 )


*SRC=MMBZ5254BW;DI_MMBZ5254BW;Diodes;Zener 10V-50V; 27.0V  0.200W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5254BW  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 24.6
.MODEL DF D ( IS=3.05p RS=27.6 N=1.10
+ CJO=27.3p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.10e-016 RS=25.5 N=3.00 )


*SRC=MMBZ5255B;DI_MMBZ5255B;Diodes;Zener 10V-50V; 28.0V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_MMBZ5255B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 24.8
.MODEL DF D ( IS=5.15p RS=29.1 N=1.10
+ CJO=26.9p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.03f RS=40.1 N=3.00 )
.ENDS


*SRC=MMBZ5255BS;DI_MMBZ5255BS;Diodes;Zener 10V-50V; 28.0V  0.200W   Diodes Inc. This model covers only one element.  There are two elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5255BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 25.6
.MODEL DF D ( IS=2.94p RS=27.5 N=1.10
+ CJO=41.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.89e-016 RS=26.7 N=3.00 )


*SRC=MMBZ5255BT;DI_MMBZ5255BT;Diodes;Zener 10V-50V; 28.0V  0.150W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5255BT  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 25.6
.MODEL DF D ( IS=2.21p RS=26.7 N=1.10
+ CJO=26.9p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.41e-016 RS=26.7 N=3.00 )


*SRC=MMBZ5255BTS;DI_MMBZ5255BTS;Diodes;Zener 10V-50V; 28.0V  0.200W   Diodes Inc. This model covers only one element.  There are three elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5255BTS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 25.6
.MODEL DF D ( IS=2.94p RS=27.5 N=1.10
+ CJO=41.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.89e-016 RS=26.7 N=3.00 )


*SRC=MMBZ5255BW;DI_MMBZ5255BW;Diodes;Zener 10V-50V; 28.0V  0.200W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5255BW  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 25.6
.MODEL DF D ( IS=2.94p RS=27.5 N=1.10
+ CJO=26.9p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.89e-016 RS=26.7 N=3.00 )


*SRC=MMBZ5256B;DI_MMBZ5256B;Diodes;Zener 10V-50V; 30.0V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_MMBZ5256B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 26.7
.MODEL DF D ( IS=4.81p RS=28.9 N=1.10
+ CJO=26.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=9.61e-016 RS=45.1 N=3.00 )
.ENDS


*SRC=MMBZ5256BS;DI_MMBZ5256BS;Diodes;Zener 10V-50V; 30.0V  0.200W   Diodes Inc. This model covers only one element.  There are two elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5256BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 27.6
.MODEL DF D ( IS=2.75p RS=27.3 N=1.10
+ CJO=40.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.49e-016 RS=30.5 N=3.00 )


*SRC=MMBZ5256BT;DI_MMBZ5256BT;Diodes;Zener 10V-50V; 30.0V  0.150W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5256BT  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 27.5
.MODEL DF D ( IS=2.06p RS=26.5 N=1.10
+ CJO=26.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.12e-016 RS=30.5 N=3.00 )


*SRC=MMBZ5256BTS;DI_MMBZ5256BTS;Diodes;Zener 10V-50V; 30.0V  0.200W   Diodes Inc. This model covers only one element.  There are three elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5256BTS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 27.6
.MODEL DF D ( IS=2.75p RS=27.3 N=1.10
+ CJO=40.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.49e-016 RS=30.5 N=3.00 )


*SRC=MMBZ5256BW;DI_MMBZ5256BW;Diodes;Zener 10V-50V; 30.0V  0.200W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5256BW  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 27.6
.MODEL DF D ( IS=2.75p RS=27.3 N=1.10
+ CJO=26.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.49e-016 RS=30.5 N=3.00 )


*SRC=MMBZ5257B;DI_MMBZ5257B;Diodes;Zener 10V-50V; 33.0V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_MMBZ5257B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 29.5
.MODEL DF D ( IS=4.37p RS=28.6 N=1.10
+ CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.74e-016 RS=54.1 N=3.00 )
.ENDS


*SRC=MMBZ5257BS;DI_MMBZ5257BS;Diodes;Zener 10V-50V; 33.0V  0.200W   Diodes Inc. This model covers only one element.  There are two elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5257BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 30.6
.MODEL DF D ( IS=2.50p RS=27.0 N=1.10
+ CJO=39.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.99e-016 RS=37.6 N=3.00 )


*SRC=MMBZ5257BT;DI_MMBZ5257BT;Diodes;Zener 10V-50V; 33.0V  0.150W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5257BT  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 30.5
.MODEL DF D ( IS=1.87p RS=26.2 N=1.10
+ CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.75e-016 RS=37.6 N=3.00 )


*SRC=MMBZ5257BTS;DI_MMBZ5257BTS;Diodes;Zener 10V-50V; 33.0V  0.200W   Diodes Inc. This model covers only one element.  There are three elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5257BTS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 30.6
.MODEL DF D ( IS=2.50p RS=27.0 N=1.10
+ CJO=39.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.99e-016 RS=37.6 N=3.00 )


*SRC=MMBZ5257BW;DI_MMBZ5257BW;Diodes;Zener 10V-50V; 33.0V  0.200W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5257BW  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 30.6
.MODEL DF D ( IS=2.50p RS=27.0 N=1.10
+ CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.99e-016 RS=37.6 N=3.00 )


*SRC=MMBZ5258B;DI_MMBZ5258B;Diodes;Zener 10V-50V; 36.0V  0.350W   Diodes Inc. 
*SYM=HZEN
.SUBCKT DI_MMBZ5258B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 32.3
.MODEL DF D ( IS=4.01p RS=28.4 N=1.10
+ CJO=24.2p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.01e-016 RS=66.1 N=3.00 )
.ENDS


*SRC=MMBZ5259BW;DI_MMBZ5259BW;Diodes;Zener 10V-50V; 39.0V  0.200W   Diodes Inc. -
*SYM=HZEN
.SUBCKT DI_MMBZ5259BW  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 36.5
.MODEL DF D ( IS=2.11p RS=26.5 N=1.10
+ CJO=23.3p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.23e-016 RS=55.7 N=3.00 )


*SRC=MMSZ5221BS;DI_MMSZ5221BS;Diodes;Zener <=10V; 2.40V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5221BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0
.MODEL DF D ( IS=85.8p RS=37.1 N=1.10
+ CJO=794p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=17.2f RS=26.1 N=3.00 )


*DIODES_INC_SPICE_MODEL ZENER
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=29Apr2013
*VERSION=2


.SUBCKT MMSZ5223B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2

.MODEL DF D ( IS=25.1p RS=33.6 N=1.10
+ CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=30f RS=3.8 N=.9 )
.ENDS


*                (c)  2013 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*SRC=MMSZ5223BS;DI_MMSZ5223BS;Diodes;Zener <=10V; 2.70V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5223BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 9.75m
.MODEL DF D ( IS=76.3p RS=36.7 N=1.10
+ CJO=463p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=15.3f RS=26.1 N=3.00 )


*SRC=MMSZ5225BS;DI_MMSZ5225BS;Diodes;Zener <=10V; 3.00V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5225BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.302
.MODEL DF D ( IS=68.7p RS=36.4 N=1.10
+ CJO=397p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=13.7f RS=26.1 N=3.00 )


*SRC=MMSZ5226BS;DI_MMSZ5226BS;Diodes;Zener <=10V; 3.30V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5226BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.634
.MODEL DF D ( IS=62.4p RS=36.2 N=1.10
+ CJO=251p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=12.5f RS=24.1 N=3.00 )


*SRC=MMSZ5227BS;DI_MMSZ5227BS;Diodes;Zener <=10V; 3.60V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5227BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.01
.MODEL DF D ( IS=57.2p RS=35.9 N=1.10
+ CJO=238p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=11.4f RS=20.1 N=3.00 )


*SRC=MMSZ5228B;DI_MMSZ5228B;Diodes;Zener <=10V; 3.90V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5228B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.32
.MODEL DF D ( IS=52.8p RS=35.7 N=1.10
+ CJO=159p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=10.6f RS=19.1 N=3.00 )


*SRC=MMSZ5228BS;DI_MMSZ5228BS;Diodes;Zener <=10V; 3.90V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5228BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.32
.MODEL DF D ( IS=52.8p RS=35.7 N=1.10
+ CJO=159p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=10.6f RS=19.1 N=3.00 )


*SRC=MMSZ5229B;DI_MMSZ5229B;Diodes;Zener <=10V; 4.30V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5229B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.73
.MODEL DF D ( IS=47.9p RS=35.4 N=1.10
+ CJO=145p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=9.58f RS=18.1 N=3.00 )


*SRC=MMSZ5229BS;DI_MMSZ5229BS;Diodes;Zener <=10V; 4.30V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5229BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.73
.MODEL DF D ( IS=47.9p RS=35.4 N=1.10
+ CJO=145p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=9.58f RS=18.1 N=3.00 )


*SRC=MMSZ5230B;DI_MMSZ5230B;Diodes;Zener <=10V; 4.70V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5230B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.19
.MODEL DF D ( IS=43.8p RS=35.2 N=1.10
+ CJO=139p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.77f RS=15.1 N=3.00 )


*SRC=MMSZ5230BS;DI_MMSZ5230BS;Diodes;Zener <=10V; 4.70V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5230BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.19
.MODEL DF D ( IS=43.8p RS=35.2 N=1.10
+ CJO=139p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.77f RS=15.1 N=3.00 )


*SRC=MMSZ5231B;DI_MMSZ5231B;Diodes;Zener <=10V; 5.10V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5231B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.62
.MODEL DF D ( IS=40.4p RS=34.9 N=1.10
+ CJO=132p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.08f RS=13.1 N=3.00 )


*SRC=MMSZ5231BS;DI_MMSZ5231BS;Diodes;Zener <=10V; 5.10V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5231BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.62
.MODEL DF D ( IS=40.4p RS=34.9 N=1.10
+ CJO=132p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.08f RS=13.1 N=3.00 )


*SRC=MMSZ5232B;DI_MMSZ5232B;Diodes;Zener <=10V; 5.60V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5232B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 3.23
.MODEL DF D ( IS=36.8p RS=34.7 N=1.10
+ CJO=106p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=7.36f RS=7.11 N=3.00 )


*SRC=MMSZ5232BS;DI_MMSZ5232BS;Diodes;Zener <=10V; 5.60V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5232BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 3.23
.MODEL DF D ( IS=36.8p RS=34.7 N=1.10
+ CJO=106p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=7.36f RS=7.11 N=3.00 )


*SRC=MMSZ5233B;DI_MMSZ5233B;Diodes;Zener <=10V; 6.00V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5233B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 3.71
.MODEL DF D ( IS=34.3p RS=34.5 N=1.10
+ CJO=83.3p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.87f RS=3.11 N=3.00 )


*SRC=MMSZ5233BS;DI_MMSZ5233BS;Diodes;Zener <=10V; 6.00V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5233BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 3.71
.MODEL DF D ( IS=34.3p RS=34.5 N=1.10
+ CJO=83.3p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.87f RS=3.11 N=3.00 )


*SRC=MMSZ5234B;DI_MMSZ5234B;Diodes;Zener <=10V; 6.20V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5234B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 3.91
.MODEL DF D ( IS=33.2p RS=34.4 N=1.10
+ CJO=79.4p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.65f RS=3.11 N=3.00 )


*SRC=MMSZ5234BS;DI_MMSZ5234BS;Diodes;Zener <=10V; 6.20V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5234BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 3.91
.MODEL DF D ( IS=33.2p RS=34.4 N=1.10
+ CJO=79.4p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.65f RS=3.11 N=3.00 )


*SRC=MMSZ5235B;DI_MMSZ5235B;Diodes;Zener <=10V; 6.80V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5235B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 4.56
.MODEL DF D ( IS=30.3p RS=34.1 N=1.10
+ CJO=71.4p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.06f RS=1.15 N=2.97 )


*SRC=MMSZ5235BS;DI_MMSZ5235BS;Diodes;Zener <=10V; 6.80V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5235BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 4.56
.MODEL DF D ( IS=30.3p RS=34.1 N=1.10
+ CJO=71.4p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.06f RS=1.15 N=2.97 )


*SRC=MMSZ5236B;DI_MMSZ5236B;Diodes;Zener <=10V; 7.50V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5236B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.21
.MODEL DF D ( IS=27.5p RS=33.8 N=1.10
+ CJO=58.2p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.49f RS=2.12 N=3.00 )


*SRC=MMSZ5236BS;DI_MMSZ5236BS;Diodes;Zener <=10V; 7.50V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5236BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.21
.MODEL DF D ( IS=27.5p RS=33.8 N=1.10
+ CJO=58.2p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.49f RS=2.12 N=3.00 )


*SRC=MMSZ5237B;DI_MMSZ5237B;Diodes;Zener <=10V; 8.20V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5237B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.86
.MODEL DF D ( IS=25.1p RS=33.6 N=1.10
+ CJO=52.9p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.02f RS=4.11 N=3.00 )


*SRC=MMSZ5237BS;DI_MMSZ5237BS;Diodes;Zener <=10V; 8.20V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5237BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.86
.MODEL DF D ( IS=25.1p RS=33.6 N=1.10
+ CJO=52.9p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.02f RS=4.11 N=3.00 )


*SRC=MMSZ5238B;DI_MMSZ5238B;Diodes;Zener <=10V; 8.70V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5238B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 6.36
.MODEL DF D ( IS=23.7p RS=33.4 N=1.10
+ CJO=51.6p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.74f RS=4.11 N=3.00 )


*SRC=MMSZ5238BS;DI_MMSZ5238BS;Diodes;Zener <=10V; 8.70V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5238BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 6.36
.MODEL DF D ( IS=23.7p RS=33.4 N=1.10
+ CJO=51.6p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.74f RS=4.11 N=3.00 )


*SRC=MMSZ5239B;DI_MMSZ5239B;Diodes;Zener <=10V; 9.10V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5239B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 6.72
.MODEL DF D ( IS=22.6p RS=33.3 N=1.10
+ CJO=50.3p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.53f RS=6.11 N=3.00 )


*SRC=MMSZ5239BS;DI_MMSZ5239BS;Diodes;Zener <=10V; 9.10V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5239BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 6.72
.MODEL DF D ( IS=22.6p RS=33.3 N=1.10
+ CJO=50.3p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.53f RS=6.11 N=3.00 )


*SRC=MMSZ5240B;DI_MMSZ5240B;Diodes;Zener <=10V; 10.0V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5240B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 7.47
.MODEL DF D ( IS=20.6p RS=33.0 N=1.10
+ CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.12f RS=13.1 N=3.00 )


*SRC=MMSZ5240BS;DI_MMSZ5240BS;Diodes;Zener <=10V; 10.0V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5240BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 7.47
.MODEL DF D ( IS=20.6p RS=33.0 N=1.10
+ CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.12f RS=13.1 N=3.00 )


*SRC=MMSZ5241B;DI_MMSZ5241B;Diodes;Zener 10V-50V; 11.0V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5241B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 8.36
.MODEL DF D ( IS=18.7p RS=32.7 N=1.10
+ CJO=32.7p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.75f RS=18.1 N=3.00 )


*SRC=MMSZ5241BS;DI_MMSZ5241BS;Diodes;Zener 10V-50V; 11.0V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5241BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 8.36
.MODEL DF D ( IS=18.7p RS=32.7 N=1.10
+ CJO=32.7p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.75f RS=18.1 N=3.00 )


*SRC=MMSZ5242B;DI_MMSZ5242B;Diodes;Zener 10V-50V; 12.0V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5242B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 9.19
.MODEL DF D ( IS=17.2p RS=32.5 N=1.10
+ CJO=31.4p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.43f RS=26.1 N=3.00 )


*SRC=MMSZ5242BS;DI_MMSZ5242BS;Diodes;Zener 10V-50V; 12.0V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5242BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 9.19
.MODEL DF D ( IS=17.2p RS=32.5 N=1.10
+ CJO=31.4p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.43f RS=26.1 N=3.00 )


*SRC=MMSZ5243B;DI_MMSZ5243B;Diodes;Zener 10V-50V; 13.0V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5243B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 10.7
.MODEL DF D ( IS=15.8p RS=32.3 N=1.10
+ CJO=30.2p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.17f RS=4.82 N=3.00 )


*SRC=MMSZ5243BS;DI_MMSZ5243BS;Diodes;Zener 10V-50V; 13.0V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5243BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 10.7
.MODEL DF D ( IS=15.8p RS=32.3 N=1.10
+ CJO=30.2p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.17f RS=4.82 N=3.00 )


*SRC=MMSZ5245B;DI_MMSZ5245B;Diodes;Zener 10V-50V; 15.0V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5245B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 12.7
.MODEL DF D ( IS=13.7p RS=31.9 N=1.10
+ CJO=28.9p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.75f RS=6.86 N=3.00 )


*SRC=MMSZ5245BS;DI_MMSZ5245BS;Diodes;Zener 10V-50V; 15.0V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5245BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 12.7
.MODEL DF D ( IS=13.7p RS=31.9 N=1.10
+ CJO=28.9p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.75f RS=6.86 N=3.00 )


*SRC=MMSZ5246B;DI_MMSZ5246B;Diodes;Zener 10V-50V; 16.0V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5246B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 13.7
.MODEL DF D ( IS=12.9p RS=31.7 N=1.10
+ CJO=27.7p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.58f RS=7.04 N=3.00 )


*SRC=MMSZ5246BS;DI_MMSZ5246BS;Diodes;Zener 10V-50V; 16.0V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5246BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 13.7
.MODEL DF D ( IS=12.9p RS=31.7 N=1.10
+ CJO=27.7p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.58f RS=7.04 N=3.00 )


*SRC=MMSZ5248B;DI_MMSZ5248B;Diodes;Zener 10V-50V; 18.0V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5248B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 15.7
.MODEL DF D ( IS=11.4p RS=31.3 N=1.10
+ CJO=25.8p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.29f RS=9.90 N=3.00 )


*SRC=MMSZ5248BS;DI_MMSZ5248BS;Diodes;Zener 10V-50V; 18.0V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5248BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 15.7
.MODEL DF D ( IS=11.4p RS=31.3 N=1.10
+ CJO=25.8p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.29f RS=9.90 N=3.00 )


*SRC=MMSZ5250B;DI_MMSZ5250B;Diodes;Zener 10V-50V; 20.0V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5250B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 17.7
.MODEL DF D ( IS=10.3p RS=31.0 N=1.10
+ CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.06f RS=8.47 N=3.00 )


*SRC=MMSZ5250BS;DI_MMSZ5250BS;Diodes;Zener 10V-50V; 20.0V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5250BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 17.7
.MODEL DF D ( IS=10.3p RS=31.0 N=1.10
+ CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.06f RS=8.47 N=3.00 )


*SRC=MMSZ5251B;DI_MMSZ5251B;Diodes;Zener 10V-50V; 22.0V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5251B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 19.7
.MODEL DF D ( IS=9.36p RS=30.8 N=1.10
+ CJO=18.9p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.87f RS=15.1 N=3.00 )


*SRC=MMSZ5251BS;DI_MMSZ5251BS;Diodes;Zener 10V-50V; 22.0V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5251BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 19.7
.MODEL DF D ( IS=9.36p RS=30.8 N=1.10
+ CJO=18.9p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.87f RS=15.1 N=3.00 )


*SRC=MMSZ5252B;DI_MMSZ5252B;Diodes;Zener 10V-50V; 24.0V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5252B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 21.7
.MODEL DF D ( IS=8.58p RS=30.5 N=1.10
+ CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.72f RS=18.1 N=3.00 )


*SRC=MMSZ5252BS;DI_MMSZ5252BS;Diodes;Zener 10V-50V; 24.0V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5252BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 21.7
.MODEL DF D ( IS=8.58p RS=30.5 N=1.10
+ CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.72f RS=18.1 N=3.00 )


*SRC=MMSZ5254B;DI_MMSZ5254B;Diodes;Zener 10V-50V; 27.0V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5254B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 24.6
.MODEL DF D ( IS=7.63p RS=30.2 N=1.10
+ CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.53f RS=25.5 N=3.00 )


*SRC=MMSZ5254BS;DI_MMSZ5254BS;Diodes;Zener 10V-50V; 27.0V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5254BS 1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 24.6
.MODEL DF D ( IS=7.63p RS=30.2 N=1.10
+ CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.53f RS=25.5 N=3.00 )


*SRC=MMSZ5255B;DI_MMSZ5255B;Diodes;Zener 10V-50V; 28.0V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5255B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 25.6
.MODEL DF D ( IS=7.36p RS=30.1 N=1.10
+ CJO=15.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.47f RS=26.7 N=3.00 )


*SRC=MMSZ5255BS;DI_MMSZ5255BS;Diodes;Zener 10V-50V; 28.0V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5255BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 25.6
.MODEL DF D ( IS=7.36p RS=30.1 N=1.10
+ CJO=15.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.47f RS=26.7 N=3.00 )


*SRC=MMSZ5256B;DI_MMSZ5256B;Diodes;Zener 10V-50V; 30.0V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5256B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 27.6
.MODEL DF D ( IS=6.87p RS=29.9 N=1.10
+ CJO=14.5p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.37f RS=30.5 N=3.00 )


*SRC=MMSZ5256BS;DI_MMSZ5256BS;Diodes;Zener 10V-50V; 30.0V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5256BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 27.6
.MODEL DF D ( IS=6.87p RS=29.9 N=1.10
+ CJO=14.5p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.37f RS=30.5 N=3.00 )


*SRC=MMSZ5257B;DI_MMSZ5257B;Diodes;Zener 10V-50V; 33.0V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5257B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 30.6
.MODEL DF D ( IS=6.24p RS=29.6 N=1.10
+ CJO=14.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.25f RS=37.6 N=3.00 )


*SRC=MMSZ5257BS;DI_MMSZ5257BS;Diodes;Zener 10V-50V; 33.0V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5257BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 30.6
.MODEL DF D ( IS=6.24p RS=29.6 N=1.10
+ CJO=14.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.25f RS=37.6 N=3.00 )


*SRC=MMSZ5258B;DI_MMSZ5258B;Diodes;Zener 10V-50V; 36.0V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5258B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 33.6
.MODEL DF D ( IS=5.72p RS=3.55k N=1.10
+ CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.14f RS=47.1 N=3.00 )


*SRC=MMSZ5258BS;DI_MMSZ5258BS;Diodes;Zener 10V-50V; 36.0V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5258BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 33.6
.MODEL DF D ( IS=5.72p RS=29.4 N=1.10
+ CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.14f RS=47.1 N=3.00 )


*SRC=MMSZ5259B;DI_MMSZ5259B;Diodes;Zener 10V-50V; 39.0V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5259B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 36.6
.MODEL DF D ( IS=5.28p RS=29.1 N=1.10
+ CJO=13.7p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.06f RS=55.7 N=3.00 )


*SRC=MMSZ5259BS;DI_MMSZ5259BS;Diodes;Zener 10V-50V; 39.0V  0.500W   Diodes Inc. 500 mW Zener
*SYM=HZEN
.SUBCKT DI_MMSZ5259BS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 36.6
.MODEL DF D ( IS=5.28p RS=29.1 N=1.10
+ CJO=13.7p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.06f RS=55.7 N=3.00 )


*SRC=MMSZ5263B;MMSZ5263B;Diodes;Zener >50V; 56.0V  0.500W   DIODES Zener
*SYM=HZEN
.SUBCKT MMSZ5263B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 53.5
.MODEL DF D ( IS=3.68p RS=28.1 N=1.10
+ CJO=11.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=7.36e-016 RS=115 N=3.00 )
.ENDS


*SRC=QZX363C12;DI_QZX363C12;Diodes;Zener 10V-50V; 12.0V  0.200W   Diodes Inc. Zener Diode Array, quad, one node of four
*SYM=HZEN
.SUBCKT DI_QZX363C12  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 9.71
.MODEL DF D ( IS=6.87p RS=29.9 N=1.10
+ CJO=26.4p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.37f RS=9.46 N=3.00 )


*SRC=QZX363C15;DI_QZX363C15;Diodes;Zener 10V-50V; 15.0V  0.200W   Diodes Inc. Zener Diode Array, quad, one node of four
*SYM=HZEN
.SUBCKT DI_QZX363C15  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 12.7
.MODEL DF D ( IS=5.49p RS=29.3 N=1.10
+ CJO=25.8p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.10f RS=14.5 N=3.00 )


*SRC=QZX363C20;DI_QZX363C20;Diodes;Zener 10V-50V; 20.0V  0.200W   Diodes Inc. Zener Diode Array, quad, one node of four
*SYM=HZEN
.SUBCKT DI_QZX363C20  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 17.5
.MODEL DF D ( IS=4.12p RS=28.4 N=1.10
+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.24e-016 RS=39.5 N=3.00 )


*SRC=QZX363C5V6;DI_QZX363C5V6;Diodes;Zener <=10V; 5.60V  0.200W   Diodes Inc. Zener Diode Array, quad, one node of four
*SYM=HZEN
.SUBCKT DI_QZX363C5V6  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 3.29
.MODEL DF D ( IS=14.7p RS=32.1 N=1.10
+ CJO=92.6p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.94f RS=24.5 N=3.00 )


*SRC=QZX363C6V8;DI_QZX363C6V8;Diodes;Zener <=10V; 6.80V  0.200W   Diodes Inc. Zener Diode Array, quad, one node of four
*SYM=HZEN
.SUBCKT DI_QZX363C6V8  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.15
.MODEL DF D ( IS=12.1p RS=31.5 N=1.10
+ CJO=66.1p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.42f RS=3.45 N=2.23 )


*SRC=QZX563C6V8C;DI_QZX563C6V8C;Diodes;Zener <=10V; 6.80V  0.150W   Diodes Inc.
-
*SYM=HZEN
.SUBCKT DI_QZX563C6V8C  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.20
.MODEL DF D ( IS=30.3p RS=34.1 N=1.10
+ CJO=72.7p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.06f RS=3.45 N=2.23


*DIODES_INC_SPICE_MODEL
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=18sep2013
*VERSION=1


.SUBCKT SMAZ15  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 14.2
.MODEL DF D ( IS=2.51p RS=.0780 N=1.15
+ CJO=100p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.02f RS=3.8 N=1 )
.ENDS
.SIMULATOR DEFAULT

*                (c)  2013 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*SRC=UDZ5V1B;UDZ5V1B;Diodes;Zener <=10V; 5.10V  0.200W   DIODES INC Zener
*SYM=HZEN
.SUBCKT UDZ5V1B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 4.20
.MODEL DF D ( IS=16.2p RS=25.3 N=1.10
+ CJO=28.0p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.23f RS=1.89 N=1.22 )
.ENDS


*SRC=UDZ5V1BF;UDZ5V1BF;Diodes;Zener <=10V; 5.09V  0.500W   DIODES Zener
*SYM=HZEN
.SUBCKT UDZ5V1BF  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.66
.MODEL DF D ( IS=40.5p RS=1.92 N=1.10
+ CJO=30.0p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.09f RS=64.5 N=3.00 )
.ENDS


*TITLE=GDZ5V6LP3
*DATE=25/01/2016
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*VERSION=1


** Imported from: C:\Users\suppuluri\Desktop\GDZ3V9LP3.txt
.model GDZ5V6LP3  D(IS=.21f RS=0.35 CJO=14.5p M=0.37 VJ=0.7 N=1 IKF=18m ISR=.05n 
+ BV=5.5 IBV=100u TT=30n EG=1.09 TRS1=.1m)



*                (c)  2016 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*DIODES_INC_SPICE_MODEL PD3Z284C5V6
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=02/12/15
*VERSION=1
*PINS 1=A 2=K

.SUBCKT DDZ9684  1 2
*        Terminals    A   K
D1 1 2 DF
DR 3 1 DR
VZ 2 3 2.25
.MODEL DF D ( IS=1.5f RS=.22 N=1
+ CJO=119p VJ=0.750 M=0.330 TT=50.1n BV=5.1 IBV=3u TBV1=.31m TRS1=3m NBV=1.8)
.MODEL DR D ( IS=80f RS=200 N=2 EG=1.4)
.ENDS


*                (c)  2015 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*DIODES_INC_SPICE_MODEL
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=29Jan2016
*VERSION=1

.SUBCKT DDZ3V6BSF  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 1 2 DR
.MODEL DF D ( IS=10f RS=.5 N=1.10
+ CJO=46.3p VJ=0.750 M=0.330 TT=10.1n BV=3.35 IBV=.1u TBV1=-1m)
.MODEL DR D ( IS=5f RS=6k N=10 BV=.5 IBV=1f ISR=1f Eg=1.4 TBV1=-6m)
.ENDS



*                (c)  2016 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*TITLE=GDZ6V8LP3
*DATE=22/02/2016
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*VERSION=1



.model GDZ6V8LP3  D(IS=.2f RS=.05 CJO=17p M=0.37 VJ=0.7 N=.9 IKF=.1m ISR=.05n 
+ BV=6.71 IBV=100u TT=30n EG=1.14 TRS1=.01m)



*                (c)  2016 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*DIODES_INC_SPICE_MODEL
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=26Feb2016
*VERSION=1

.SUBCKT DDZ6V8B  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 1 2 DR
.MODEL DF D ( IS=30f RS=.22 N=1.13
+ CJO=46.3p VJ=0.750 M=0.330 TT=10.1n BV=6.5 IBV=1u TBV1=.3m NBV=.8)
.MODEL DR D ( IS=5f RS=4k N=10 BV=4.5 IBV=1f ISR=1f Eg=1.4 TBV1=-1.22m NBV=3)
.ENDS


*                (c)  2016 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, Un


*DIODES_INC_SPICE_MODEL
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=26Feb2016
*VERSION=1

.SUBCKT DDZ6V8BSF  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 1 2 DR
.MODEL DF D ( IS=30f RS=.22 N=1.13
+ CJO=46.3p VJ=0.750 M=0.330 TT=10.1n BV=6.5 IBV=1u TBV1=.3m NBV=.8)
.MODEL DR D ( IS=5f RS=4k N=10 BV=4.5 IBV=1f ISR=1f Eg=1.4 TBV1=-1.22m NBV=3)
.ENDS


*                (c)  2016 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, Un


*DIODES_INC_SPICE_MODEL
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=13May2016
*VERSION=1

.SUBCKT DDZ9V1BSF  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 1 2 DR
.MODEL DF D ( IS=55f RS=.075 N=1.15
+ CJO=46.3p VJ=0.750 M=0.330 TT=10.1n BV=8.6 IBV=10u TBV1=.4m IKF=30m EG=1.16)
.MODEL DR D ( IS=5f RS=6k N=10 BV=7 IBV=1p ISR=1f Eg=.05 TBV1=-1m)
.ENDS



*                (c)  2016 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*DIODES_INC_SPICE_MODEL
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=13Jun2016
*VERSION=1

.SUBCKT DDZ4V3BSF  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 1 2 DR
.MODEL DF D ( IS=10f RS=.5 N=1.10
+ CJO=46.3p VJ=0.750 M=0.330 TT=10.1n BV=4 IBV=.6u TBV1=-1m)
.MODEL DR D ( IS=5f RS=6k N=10 BV=.5 IBV=1f ISR=1f Eg=1.4 TBV1=-6m)
.ENDS



*                (c)  2016 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*TITLE=GDZ3V9LP3
*DATE=21/11/2013
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*VERSION=1


** Imported from: C:UserssuppuluriDesktopGDZ3V9LP3.txt
.model GDZ3V9LP3  D(IS=.21f RS=0.15 CJO=17p M=0.37 VJ=0.7 N=1 IKF=5m ISR=.05n 
+ BV=5 IBV=100u TT=30n EG=1.12 TRS1=.1m)



*
.ENDS
                (c)  2013 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*SRC=BZT52C13S;DI_BZT52C13S;Diodes;Zener 10V-50V; 13.0V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZT52C13S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 10.7
.MODEL DF D ( IS=6.34p RS=29.7 N=1.10
+ CJO=25.8p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.27f RS=14.5 N=3.00 ).ENDS



*SRC=BZT52C22T;DI_BZT52C22T;Diodes;Zener 10V-50V; 22.0V  0.500W   Diodes Inc.
-
*SYM=HZEN
.SUBCKT DI_BZT52C22  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 19.6
.MODEL DF D ( IS=9.36p RS=30.8 N=1.10
+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.87f RS=39.5 N=3.00).ENDS



*SRC=BZT52C24;DI_BZT52C24;Diodes;Zener 10V-50V; 24.0V  0.500W   Diodes Inc.
-
*SYM=HZEN
.SUBCKT DI_BZT52C24  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 21.5
.MODEL DF D ( IS=8.58p RS=30.5 N=1.10
+ CJO=21.4p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.72f RS=54.5 N=3.00).ENDS



*SRC=BZT52C4V3S;DI_BZT52C4V3S;Diodes;Zener <=10V; 4.30V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZT52C4V3S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.76
.MODEL DF D ( IS=19.2p RS=32.8 N=1.10
+ CJO=370p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.83f RS=74.5 N=3.00 ).ENDS



*SRC=BZT52C4V3T;DI_BZT52C4V3T;Diodes;Zener <=10V; 4.30V  0.15W   Diodes Inc.
-
*SYM=HZEN
.SUBCKT DI_BZT52C4V3T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.83
.MODEL DF D ( IS=47.9p RS=35.4 N=1.10
+ CJO=370p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=9.58f RS=74.5 N=3.00).ENDS



*SRC=BZT52C4V7S;DI_BZT52C4V7S;Diodes;Zener <=10V; 4.70V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZT52C4V7S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.20
.MODEL DF D ( IS=17.5p RS=32.6 N=1.10
+ CJO=357p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.51f RS=64.5 N=3.00 ).ENDS



*SRC=BZT52C4V7T;DI_BZT52C4V7T;Diodes;Zener <=10V; 4.70V  0.15W   Diodes Inc.
-
*SYM=HZEN
.SUBCKT DI_BZT52C4V7T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.27
.MODEL DF D ( IS=43.8p RS=35.2 N=1.10
+ CJO=357p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.77f RS=64.5 N=3.00).ENDS



*SRC=BZT52C51S;DI_BZT52C51S;Diodes;Zener >50V; 51.0V  0.200W   Diodes Inc. Zener
*SYM=HZEN
.SUBCKT DI_BZT52C51S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 48.2
.MODEL DF D ( IS=1.62p RS=25.8 N=1.10
+ CJO=24.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.23e-016 RS=84.5 N=3.00 ).ENDS



*SRC=BZT52C5V1;DI_BZT52C5V1;Diodes;Zener <=10V; 5.10V  0.500W   Diodes Inc.
-
*SYM=HZEN
.SUBCKT DI_BZT52C5V1  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.77
.MODEL DF D ( IS=40.4p RS=34.9 N=1.10
+ CJO=145p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.08f RS=44.5 N=3.00).ENDS



*SRC=BZT52C5V1S;DI_BZT52C5V1S;Diodes;Zener <=10V; 5.10V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZT52C5V1S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.70
.MODEL DF D ( IS=16.2p RS=32.3 N=1.10
+ CJO=145p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.23f RS=44.5 N=3.00 ).ENDS



*SRC=BZT52C5V6S;DI_BZT52C5V6S;Diodes;Zener <=10V; 5.60V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZT52C5V6S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 3.29
.MODEL DF D ( IS=14.7p RS=32.1 N=1.10
+ CJO=99.2p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.94f RS=24.5 N=3.00 ).ENDS



*SRC=BZT52C5V6T;DI_BZT52C5V6T;Diodes;Zener <=10V; 5.60V  0.500W   Diodes Inc.
-
*SYM=HZEN
.SUBCKT DI_BZT52C5V6  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 3.36
.MODEL DF D ( IS=36.8p RS=34.7 N=1.10
+ CJO=99.2p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=7.36f RS=24.5 N=3.00).ENDS



*SRC=BZT52C6V2;DI_BZT52C6V2;Diodes;Zener <=10V; 6.20V  0.500W   Diodes Inc.
-
*SYM=HZEN
.SUBCKT DI_BZT52C6V2  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.14
.MODEL DF D ( IS=33.2p RS=34.4 N=1.10
+ CJO=79.4p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.65f RS=2.30 N=1.49).ENDS



*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=1/04/2014
*VERSION=1


.model BZT52C6V2LP D(IS=.0002n RS=0.01 CJO=1000p M=0.5 VJ=0.4 N=1.2 IKF=30m ISR=.0002u BV=6 IBV=10u TT=40n EG=1.2 TRS1=.01m)


.ENDS
*         (c)  2016 Diodes Inc
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*

.SIMULATOR DEFAULT



*SRC=BZT52C6V2T;DI_BZT52C6V2T;Diodes;Zener <=10V; 6.20V  0.500W   Diodes Inc.
-
*SYM=HZEN
.SUBCKT DI_BZT52C6V2  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.14
.MODEL DF D ( IS=33.2p RS=34.4 N=1.10
+ CJO=79.4p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.65f RS=2.30 N=1.49).ENDS



*SRC=BZT52C6V8;DI_BZT52C6V8;Diodes;Zener <=10V; 6.80V  0.500W   Diodes Inc.
-
*SYM=HZEN
.SUBCKT DI_BZT52C6V8  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.20
.MODEL DF D ( IS=30.3p RS=34.1 N=1.10
+ CJO=72.7p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.06f RS=3.45 N=2.23).ENDS



*SRC=BZT52C6V8S;DI_BZT52C6V8S;Diodes;Zener <=10V; 6.80V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZT52C6V8S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.15
.MODEL DF D ( IS=12.1p RS=31.5 N=1.10
+ CJO=72.7p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.42f RS=3.45 N=2.23 ).ENDS



*SRC=BZT52C6V8T;DI_BZT52C6V8T;Diodes;Zener <=10V; 6.80V  0.500W   Diodes Inc.
-
*SYM=HZEN
.SUBCKT DI_BZT52C6V8  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.20
.MODEL DF D ( IS=30.3p RS=34.1 N=1.10
+ CJO=72.7p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.06f RS=3.45 N=2.23).ENDS



*SRC=BZT52C7V5;DI_BZT52C7V5;Diodes;Zener <=10V; 7.50V  0.500W   Diodes Inc.
-
*SYM=HZEN
.SUBCKT DI_BZT52C7V5  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.89
.MODEL DF D ( IS=27.5p RS=33.8 N=1.10
+ CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.49f RS=3.45 N=2.23).ENDS



*SRC=BZT52C7V5S;DI_BZT52C7V5S;Diodes;Zener <=10V; 7.50V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZT52C7V5S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.84
.MODEL DF D ( IS=11.0p RS=31.2 N=1.10
+ CJO=54.2p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.20f RS=3.45 N=2.23 ).ENDS



*SRC=BZT52C7V5T;DI_BZT52C7V5T;Diodes;Zener <=10V; 7.50V  0.500W   Diodes Inc.
-
*SYM=HZEN
.SUBCKT DI_BZT52C7V5  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.89
.MODEL DF D ( IS=27.5p RS=33.8 N=1.10
+ CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.49f RS=3.45 N=2.23).ENDS



*SRC=BZT52C8V2S;DI_BZT52C8V2S;Diodes;Zener <=10V; 8.20V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZT52C8V2S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 6.53
.MODEL DF D ( IS=10.0p RS=31.0 N=1.10
+ CJO=51.6p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.01f RS=3.45 N=2.23 ).ENDS



*SRC=BZT52C9V1S;DI_BZT52C9V1S;Diodes;Zener <=10V; 9.10V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZT52C9V1S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 7.43
.MODEL DF D ( IS=9.05p RS=30.7 N=1.10
+ CJO=48.9p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.81f RS=3.45 N=2.23 ).ENDS



*SRC=BZX84C10S;DI_BZX84C10S;Diodes;Zener <=10V; 10.0V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C10S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 7.76
.MODEL DF D ( IS=8.24p RS=30.4 N=1.10
+ CJO=24.1p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.65f RS=4.60 N=2.97 ).ENDS



*SRC=BZX84C10T;DI_BZX84C10T;Diodes;Zener <=10V; 10.0V  0.150W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C10T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 7.74
.MODEL DF D ( IS=6.18p RS=29.6 N=1.10
+ CJO=24.1p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.24f RS=4.60 N=2.97 ).ENDS



*SRC=BZX84C10TS;DI_BZX84C10TS;Diodes;Zener <=10V; 10.0V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C10TS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 7.76
.MODEL DF D ( IS=8.24p RS=30.4 N=1.10
+ CJO=24.1p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.65f RS=4.60 N=2.97 ).ENDS



*SRC=BZX84C10W;DI_BZX84C10W;Diodes;Zener <=10V; 10.0V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C10W  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 7.76
.MODEL DF D ( IS=8.24p RS=30.4 N=1.10
+ CJO=24.1p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.65f RS=4.60 N=2.97 ).ENDS



*SRC=BZX84C11S;DI_BZX84C11S;Diodes;Zener 10V-50V; 11.0V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C11S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 8.76
.MODEL DF D ( IS=7.49p RS=30.1 N=1.10
+ CJO=45.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.50f RS=4.60 N=2.97 ).ENDS



*SRC=BZX84C11T;DI_BZX84C11T;Diodes;Zener 10V-50V; 11.0V  0.150W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C11T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 8.74
.MODEL DF D ( IS=5.62p RS=29.3 N=1.10
+ CJO=45.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.12f RS=4.60 N=2.97 ).ENDS



*SRC=BZX84C11W;DI_BZX84C11W;Diodes;Zener 10V-50V; 11.0V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C11W  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 8.76
.MODEL DF D ( IS=7.49p RS=30.1 N=1.10
+ CJO=45.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.50f RS=4.60 N=2.97 ).ENDS



*SRC=BZX84C12S;DI_BZX84C12S;Diodes;Zener 10V-50V; 12.0V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C12S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 9.71
.MODEL DF D ( IS=6.87p RS=29.9 N=1.10
+ CJO=42.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.37f RS=9.46 N=3.00 ).ENDS



*SRC=BZX84C12T;DI_BZX84C12T;Diodes;Zener 10V-50V; 12.0V  0.150W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C12T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 9.68
.MODEL DF D ( IS=5.15p RS=29.1 N=1.10
+ CJO=42.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.03f RS=9.46 N=3.00 ).ENDS



*SRC=BZX84C12TS;DI_BZX84C12TS;Diodes;Zener 10V-50V; 12.0V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C12TS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 9.71
.MODEL DF D ( IS=6.87p RS=29.9 N=1.10
+ CJO=42.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.37f RS=9.46 N=3.00 ).ENDS



*SRC=BZX84C12W;DI_BZX84C12W;Diodes;Zener 10V-50V; 12.0V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C12W  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 9.71
.MODEL DF D ( IS=6.87p RS=29.9 N=1.10
+ CJO=42.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.37f RS=9.46 N=3.00 ).ENDS



*SRC=BZX84C13T;DI_BZX84C13T;Diodes;Zener 10V-50V; 13.0V  0.150W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C13T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 10.7
.MODEL DF D ( IS=4.75p RS=28.8 N=1.10
+ CJO=40.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=9.51e-016 RS=14.5 N=3.00 ).ENDS



*SRC=BZX84C13TS;DI_BZX84C13TS;Diodes;Zener 10V-50V; 13.0V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C13TS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 10.7
.MODEL DF D ( IS=6.34p RS=29.7 N=1.10
+ CJO=40.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.27f RS=14.5 N=3.00 ).ENDS



*SRC=BZX84C13W;DI_BZX84C13W;Diodes;Zener 10V-50V; 13.0V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C13W  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 10.7
.MODEL DF D ( IS=6.34p RS=29.7 N=1.10
+ CJO=40.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.27f RS=14.5 N=3.00 ).ENDS



*SRC=BZX84C15S;DI_BZX84C15S;Diodes;Zener 10V-50V; 15.0V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C15S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 12.7
.MODEL DF D ( IS=5.49p RS=29.3 N=1.10
+ CJO=37.2p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.10f RS=14.5 N=3.00 ).ENDS



*SRC=BZX84C15T;DI_BZX84C15T;Diodes;Zener 10V-50V; 15.0V  0.150W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C15T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 12.6
.MODEL DF D ( IS=4.12p RS=28.4 N=1.10
+ CJO=37.2p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.24e-016 RS=14.5 N=3.00 ).ENDS



*SRC=BZX84C15TS;DI_BZX84C15TS;Diodes;Zener 10V-50V; 15.0V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C15TS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 12.7
.MODEL DF D ( IS=5.49p RS=29.3 N=1.10
+ CJO=37.2p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.10f RS=14.5 N=3.00 ).ENDS



*SRC=BZX84C15W;DI_BZX84C15W;Diodes;Zener 10V-50V; 15.0V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C15W  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 12.7
.MODEL DF D ( IS=5.49p RS=29.3 N=1.10
+ CJO=37.2p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.10f RS=14.5 N=3.00 ).ENDS



*SRC=BZX84C16S;DI_BZX84C16S;Diodes;Zener 10V-50V; 16.0V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C16S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 13.6
.MODEL DF D ( IS=5.15p RS=29.1 N=1.10
+ CJO=35.8p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.03f RS=24.5 N=3.00 ).ENDS



*SRC=BZX84C16T;DI_BZX84C16T;Diodes;Zener 10V-50V; 16.0V  0.150W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C16T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 13.6
.MODEL DF D ( IS=3.86p RS=28.2 N=1.10
+ CJO=35.8p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=7.73e-016 RS=24.5 N=3.00 ).ENDS



*SRC=BZX84C16TS;DI_BZX84C16TS;Diodes;Zener 10V-50V; 16.0V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C16TS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 13.6
.MODEL DF D ( IS=5.15p RS=29.1 N=1.10
+ CJO=35.8p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.03f RS=24.5 N=3.00 ).ENDS



*SRC=BZX84C16W;DI_BZX84C16W;Diodes;Zener 10V-50V; 16.0V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C16W  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 13.6
.MODEL DF D ( IS=5.15p RS=29.1 N=1.10
+ CJO=35.8p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.03f RS=24.5 N=3.00 ).ENDS



*SRC=BZX84C18S;DI_BZX84C18S;Diodes;Zener 10V-50V; 18.0V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C18S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 15.6
.MODEL DF D ( IS=4.58p RS=28.7 N=1.10
+ CJO=33.4p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=9.16e-016 RS=29.5 N=3.00 ).ENDS



*SRC=BZX84C18T;DI_BZX84C18T;Diodes;Zener 10V-50V; 18.0V  0.150W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C18T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 15.6
.MODEL DF D ( IS=3.43p RS=27.9 N=1.10
+ CJO=33.4p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.87e-016 RS=29.5 N=3.00 ).ENDS



*SRC=BZX84C18TS;DI_BZX84C18TS;Diodes;Zener 10V-50V; 18.0V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C18TS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 15.6
.MODEL DF D ( IS=4.58p RS=28.7 N=1.10
+ CJO=33.4p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=9.16e-016 RS=29.5 N=3.00 ).ENDS



*SRC=BZX84C18W;DI_BZX84C18W;Diodes;Zener 10V-50V; 18.0V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C18W  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 15.6
.MODEL DF D ( IS=4.58p RS=28.7 N=1.10
+ CJO=33.4p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=9.16e-016 RS=29.5 N=3.00 ).ENDS



*SRC=BZX84C20S;DI_BZX84C20S;Diodes;Zener 10V-50V; 20.0V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C20S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 17.5
.MODEL DF D ( IS=4.12p RS=28.4 N=1.10
+ CJO=31.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.24e-016 RS=39.5 N=3.00 ).ENDS



*SRC=BZX84C20T;DI_BZX84C20T;Diodes;Zener 10V-50V; 20.0V  0.150W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C20T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 17.5
.MODEL DF D ( IS=3.09p RS=27.6 N=1.10
+ CJO=31.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.18e-016 RS=39.5 N=3.00 ).ENDS



*SRC=BZX84C20TS;DI_BZX84C20TS;Diodes;Zener 10V-50V; 20.0V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C20TS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 17.5
.MODEL DF D ( IS=4.12p RS=28.4 N=1.10
+ CJO=31.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.24e-016 RS=39.5 N=3.00 ).ENDS



*SRC=BZX84C20W;DI_BZX84C20W;Diodes;Zener 10V-50V; 20.0V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C20W  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 17.5
.MODEL DF D ( IS=4.12p RS=28.4 N=1.10
+ CJO=31.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.24e-016 RS=39.5 N=3.00 ).ENDS



*SRC=BZX84C22S;DI_BZX84C22S;Diodes;Zener 10V-50V; 22.0V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C22S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 19.5
.MODEL DF D ( IS=3.75p RS=28.2 N=1.10
+ CJO=30.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=7.49e-016 RS=39.5 N=3.00 ).ENDS



*SRC=BZX84C22T;DI_BZX84C22T;Diodes;Zener 10V-50V; 22.0V  0.150W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C22T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 19.5
.MODEL DF D ( IS=2.81p RS=27.3 N=1.10
+ CJO=30.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.62e-016 RS=39.5 N=3.00 ).ENDS



*SRC=BZX84C22TS;DI_BZX84C22TS;Diodes;Zener 10V-50V; 22.0V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C22TS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 19.5
.MODEL DF D ( IS=3.75p RS=28.2 N=1.10
+ CJO=30.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=7.49e-016 RS=39.5 N=3.00 ).ENDS



*SRC=BZX84C22W;DI_BZX84C22W;Diodes;Zener 10V-50V; 22.0V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C22W  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 19.5
.MODEL DF D ( IS=3.75p RS=28.2 N=1.10
+ CJO=30.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=7.49e-016 RS=39.5 N=3.00 ).ENDS



*SRC=BZX84C24T;DI_BZX84C24T;Diodes;Zener 10V-50V; 24.0V  0.150W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C24T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 21.4
.MODEL DF D ( IS=2.57p RS=27.1 N=1.10
+ CJO=28.9p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.15e-016 RS=54.5 N=3.00 ).ENDS



*SRC=BZX84C24TS;DI_BZX84C24TS;Diodes;Zener 10V-50V; 24.0V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C24TS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 21.4
.MODEL DF D ( IS=3.43p RS=27.9 N=1.10
+ CJO=28.9p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.87e-016 RS=54.5 N=3.00 ).ENDS



*SRC=BZX84C24W;DI_BZX84C24W;Diodes;Zener 10V-50V; 24.0V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C24W  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 21.4
.MODEL DF D ( IS=3.43p RS=27.9 N=1.10
+ CJO=28.9p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.87e-016 RS=54.5 N=3.00 ).ENDS



*SRC=BZX84C27S;DI_BZX84C27S;Diodes;Zener 10V-50V; 27.0V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C27S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 24.7
.MODEL DF D ( IS=3.05p RS=27.6 N=1.10
+ CJO=27.3p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.10e-016 RS=41.1 N=3.00 ).ENDS



*SRC=BZX84C27T;DI_BZX84C27T;Diodes;Zener 10V-50V; 27.0V  0.150W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C27T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 24.7
.MODEL DF D ( IS=2.29p RS=26.8 N=1.10
+ CJO=27.3p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.58e-016 RS=41.1 N=3.00 ).ENDS



*SRC=BZX84C27TS;DI_BZX84C27TS;Diodes;Zener 10V-50V; 27.0V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C27TS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 24.7
.MODEL DF D ( IS=3.05p RS=27.6 N=1.10
+ CJO=27.3p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.10e-016 RS=41.1 N=3.00 ).ENDS



*SRC=BZX84C27W;DI_BZX84C27W;Diodes;Zener 10V-50V; 27.0V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C27W  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 24.7
.MODEL DF D ( IS=3.05p RS=27.6 N=1.10
+ CJO=27.3p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.10e-016 RS=41.1 N=3.00 ).ENDS



*SRC=BZX84C2V4S;DI_BZX84C2V4S;Diodes;Zener <=10V; 2.40V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C2V4S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0
.MODEL DF D ( IS=34.3p RS=34.5 N=1.10
+ CJO=205p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.87f RS=84.5 N=3.00 ).ENDS



*SRC=BZX84C2V4T;DI_BZX84C2V4T;Diodes;Zener <=10V; 2.40V  0.150W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C2V4T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0
.MODEL DF D ( IS=25.7p RS=33.7 N=1.10
+ CJO=205p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.15f RS=84.5 N=3.00 ).ENDS



*SRC=BZX84C2V4TS;DI_BZX84C2V4TS;Diodes;Zener <=10V; 2.40V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C2V4TS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0
.MODEL DF D ( IS=34.3p RS=34.5 N=1.10
+ CJO=205p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.87f RS=84.5 N=3.00 ).ENDS



*SRC=BZX84C2V4W;DI_BZX84C2V4W;Diodes;Zener <=10V; 2.40V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C2V4W  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0
.MODEL DF D ( IS=34.3p RS=34.5 N=1.10
+ CJO=205p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.87f RS=84.5 N=3.00 ).ENDS



*SRC=BZX84C2V7S;DI_BZX84C2V7S;Diodes;Zener <=10V; 2.70V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C2V7S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.146
.MODEL DF D ( IS=30.5p RS=34.1 N=1.10
+ CJO=172p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.10f RS=84.5 N=3.00 ).ENDS



*SRC=BZX84C2V7T;DI_BZX84C2V7T;Diodes;Zener <=10V; 2.70V  0.150W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C2V7T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.124
.MODEL DF D ( IS=22.9p RS=33.3 N=1.10
+ CJO=172p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.58f RS=84.5 N=3.00 ).ENDS



*SRC=BZX84C2V7TS;DI_BZX84C2V7TS;Diodes;Zener <=10V; 2.70V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C2V7TS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.146
.MODEL DF D ( IS=30.5p RS=34.1 N=1.10
+ CJO=172p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.10f RS=84.5 N=3.00 ).ENDS



*SRC=BZX84C2V7W;DI_BZX84C2V7W;Diodes;Zener <=10V; 2.70V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C2V7W  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.146
.MODEL DF D ( IS=30.5p RS=34.1 N=1.10
+ CJO=172p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.10f RS=84.5 N=3.00 ).ENDS



*SRC=BZX84C30S;DI_BZX84C30S;Diodes;Zener 10V-50V; 30.0V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C30S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 27.7
.MODEL DF D ( IS=2.75p RS=27.3 N=1.10
+ CJO=26.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.49e-016 RS=41.1 N=3.00 ).ENDS



*SRC=BZX84C30T;DI_BZX84C30T;Diodes;Zener 10V-50V; 30.0V  0.150W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C30T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 27.6
.MODEL DF D ( IS=2.06p RS=26.5 N=1.10
+ CJO=26.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.12e-016 RS=41.1 N=3.00 ).ENDS



*SRC=BZX84C30TS;DI_BZX84C30TS;Diodes;Zener 10V-50V; 30.0V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C30TS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 27.7
.MODEL DF D ( IS=2.75p RS=27.3 N=1.10
+ CJO=26.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.49e-016 RS=41.1 N=3.00 ).ENDS



*SRC=BZX84C30W;DI_BZX84C30W;Diodes;Zener 10V-50V; 30.0V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C30W  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 27.7
.MODEL DF D ( IS=2.75p RS=27.3 N=1.10
+ CJO=26.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.49e-016 RS=41.1 N=3.00 ).ENDS



*SRC=BZX84C33S;DI_BZX84C33S;Diodes;Zener 10V-50V; 33.0V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C33S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 30.7
.MODEL DF D ( IS=2.50p RS=27.0 N=1.10
+ CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.99e-016 RS=41.1 N=3.00 ).ENDS



*SRC=BZX84C33T;DI_BZX84C33T;Diodes;Zener 10V-50V; 33.0V  0.150W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C33T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 30.6
.MODEL DF D ( IS=1.87p RS=26.2 N=1.10
+ CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.75e-016 RS=41.1 N=3.00 ).ENDS



*SRC=BZX84C33TS;DI_BZX84C33TS;Diodes;Zener 10V-50V; 33.0V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C33TS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 30.7
.MODEL DF D ( IS=2.50p RS=27.0 N=1.10
+ CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.99e-016 RS=41.1 N=3.00 ).ENDS



*SRC=BZX84C33W;DI_BZX84C33W;Diodes;Zener 10V-50V; 33.0V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C33W  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 30.7
.MODEL DF D ( IS=2.50p RS=27.0 N=1.10
+ CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.99e-016 RS=41.1 N=3.00 ).ENDS



*SRC=BZX84C36S;DI_BZX84C36S;Diodes;Zener 10V-50V; 36.0V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C36S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 33.6
.MODEL DF D ( IS=2.29p RS=26.8 N=1.10
+ CJO=24.2p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.58e-016 RS=51.1 N=3.00 ).ENDS



*SRC=BZX84C36T;DI_BZX84C36T;Diodes;Zener >50V; 536V  0.150W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C36T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 533
.MODEL DF D ( IS=115f RS=18.2 N=1.10
+ CJO=24.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.31e-017 RS=51.1 N=3.00 ).ENDS



*SRC=BZX84C36TS;DI_BZX84C36TS;Diodes;Zener 10V-50V; 36.0V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C36TS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 33.6
.MODEL DF D ( IS=2.29p RS=26.8 N=1.10
+ CJO=24.2p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.58e-016 RS=51.1 N=3.00 ).ENDS



*SRC=BZX84C36W;DI_BZX84C36W;Diodes;Zener 10V-50V; 36.0V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C36W  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 33.6
.MODEL DF D ( IS=2.29p RS=26.8 N=1.10
+ CJO=24.2p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.58e-016 RS=51.1 N=3.00 ).ENDS



*SRC=BZX84C39S;DI_BZX84C39S;Diodes;Zener 10V-50V; 39.0V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C39S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 36.5
.MODEL DF D ( IS=2.11p RS=26.5 N=1.10
+ CJO=23.5p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.23e-016 RS=91.1 N=3.00 ).ENDS



*SRC=BZX84C39T;DI_BZX84C39T;Diodes;Zener 10V-50V; 39.0V  0.150W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C39T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 36.5
.MODEL DF D ( IS=1.58p RS=25.7 N=1.10
+ CJO=23.5p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.17e-016 RS=91.1 N=3.00 ).ENDS



*SRC=BZX84C39TS;DI_BZX84C39TS;Diodes;Zener 10V-50V; 39.0V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C39TS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 36.5
.MODEL DF D ( IS=2.11p RS=26.5 N=1.10
+ CJO=23.5p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.23e-016 RS=91.1 N=3.00 ).ENDS



*SRC=BZX84C39W;DI_BZX84C39W;Diodes;Zener 10V-50V; 39.0V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C39W  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 36.5
.MODEL DF D ( IS=2.11p RS=26.5 N=1.10
+ CJO=23.5p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.23e-016 RS=91.1 N=3.00 ).ENDS



*SRC=BZX84C3V0S;DI_BZX84C3V0S;Diodes;Zener <=10V; 3.00V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C3V0S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.463
.MODEL DF D ( IS=27.5p RS=33.8 N=1.10
+ CJO=147p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.49f RS=79.5 N=3.00 ).ENDS



*SRC=BZX84C3V0T;DI_BZX84C3V0T;Diodes;Zener <=10V; 3.00V  0.150W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C3V0T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.441
.MODEL DF D ( IS=20.6p RS=33.0 N=1.10
+ CJO=147p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.12f RS=79.5 N=3.00 ).ENDS



*SRC=BZX84C3V0TS;DI_BZX84C3V0TS;Diodes;Zener <=10V; 3.00V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C3V0TS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.463
.MODEL DF D ( IS=27.5p RS=33.8 N=1.10
+ CJO=147p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.49f RS=79.5 N=3.00 ).ENDS



*SRC=BZX84C3V0W;DI_BZX84C3V0W;Diodes;Zener <=10V; 3.00V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C3V0W  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.463
.MODEL DF D ( IS=27.5p RS=33.8 N=1.10
+ CJO=147p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.49f RS=79.5 N=3.00 ).ENDS



*SRC=BZX84C3V3S;DI_BZX84C3V3S;Diodes;Zener <=10V; 3.30V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C3V3S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.756
.MODEL DF D ( IS=25.0p RS=33.6 N=1.10
+ CJO=127p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.99f RS=79.5 N=3.00 ).ENDS



*SRC=BZX84C3V3T;DI_BZX84C3V3T;Diodes;Zener <=10V; 3.30V  0.150W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C3V3T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.733
.MODEL DF D ( IS=18.7p RS=32.7 N=1.10
+ CJO=127p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.75f RS=79.5 N=3.00 ).ENDS



*SRC=BZX84C3V3TS;DI_BZX84C3V3TS;Diodes;Zener <=10V; 3.30V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C3V3TS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.756
.MODEL DF D ( IS=25.0p RS=33.6 N=1.10
+ CJO=127p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.99f RS=79.5 N=3.00 ).ENDS



*SRC=BZX84C3V3W;DI_BZX84C3V3W;Diodes;Zener <=10V; 3.30V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C3V3W  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.756
.MODEL DF D ( IS=25.0p RS=33.6 N=1.10
+ CJO=127p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.99f RS=79.5 N=3.00 ).ENDS



*SRC=BZX84C3V6S;DI_BZX84C3V6S;Diodes;Zener <=10V; 3.60V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C3V6S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.07
.MODEL DF D ( IS=22.9p RS=33.3 N=1.10
+ CJO=112p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.58f RS=74.5 N=3.00 ).ENDS



*SRC=BZX84C3V6T;DI_BZX84C3V6T;Diodes;Zener <=10V; 3.60V  0.150W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C3V6T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.05
.MODEL DF D ( IS=17.2p RS=32.5 N=1.10
+ CJO=112p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.43f RS=74.5 N=3.00 ).ENDS



*SRC=BZX84C3V6TS;DI_BZX84C3V6TS;Diodes;Zener <=10V; 3.60V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C3V6TS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.07
.MODEL DF D ( IS=22.9p RS=33.3 N=1.10
+ CJO=112p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.58f RS=74.5 N=3.00 ).ENDS



*SRC=BZX84C3V6W;DI_BZX84C3V6W;Diodes;Zener <=10V; 3.60V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C3V6W  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.07
.MODEL DF D ( IS=22.9p RS=33.3 N=1.10
+ CJO=112p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.58f RS=74.5 N=3.00 ).ENDS



*SRC=BZX84C3V9S;DI_BZX84C3V9S;Diodes;Zener <=10V; 3.90V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C3V9S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.37
.MODEL DF D ( IS=21.1p RS=33.1 N=1.10
+ CJO=94.1p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.23f RS=74.5 N=3.00 ).ENDS



*SRC=BZX84C3V9T;DI_BZX84C3V9T;Diodes;Zener <=10V; 3.90V  0.150W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C3V9T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.35
.MODEL DF D ( IS=15.8p RS=32.3 N=1.10
+ CJO=94.1p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.17f RS=74.5 N=3.00 ).ENDS



*SRC=BZX84C3V9TS;DI_BZX84C3V9TS;Diodes;Zener <=10V; 3.90V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C3V9TS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.37
.MODEL DF D ( IS=21.1p RS=33.1 N=1.10
+ CJO=94.1p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.23f RS=74.5 N=3.00 ).ENDS



*SRC=BZX84C3V9W;DI_BZX84C3V9W;Diodes;Zener <=10V; 3.90V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C3V9W  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.37
.MODEL DF D ( IS=21.1p RS=33.1 N=1.10
+ CJO=94.1p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.23f RS=74.5 N=3.00 ).ENDS



*SRC=BZX84C4V3S;DI_BZX84C4V3S;Diodes;Zener <=10V; 4.30V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C4V3S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.76
.MODEL DF D ( IS=19.2p RS=32.8 N=1.10
+ CJO=85.6p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.83f RS=74.5 N=3.00 ).ENDS



*SRC=BZX84C4V3T;DI_BZX84C4V3T;Diodes;Zener <=10V; 4.30V  0.150W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C4V3T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.74
.MODEL DF D ( IS=14.4p RS=32.0 N=1.10
+ CJO=85.6p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.87f RS=74.5 N=3.00 ).ENDS



*SRC=BZX84C4V3TS;DI_BZX84C4V3TS;Diodes;Zener <=10V; 4.30V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C4V3TS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.76
.MODEL DF D ( IS=19.2p RS=32.8 N=1.10
+ CJO=85.6p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.83f RS=74.5 N=3.00 ).ENDS



*SRC=BZX84C4V3W;DI_BZX84C4V3W;Diodes;Zener <=10V; 4.30V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C4V3W  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.76
.MODEL DF D ( IS=19.2p RS=32.8 N=1.10
+ CJO=85.6p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.83f RS=74.5 N=3.00 ).ENDS



*SRC=BZX84C4V7S;DI_BZX84C4V7S;Diodes;Zener <=10V; 4.70V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C4V7S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.20
.MODEL DF D ( IS=17.5p RS=32.6 N=1.10
+ CJO=74.9p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.51f RS=64.5 N=3.00 ).ENDS



*SRC=BZX84C4V7T;DI_BZX84C4V7T;Diodes;Zener <=10V; 4.70V  0.150W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C4V7T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.18
.MODEL DF D ( IS=13.1p RS=31.7 N=1.10
+ CJO=74.9p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.63f RS=64.5 N=3.00 ).ENDS



*SRC=BZX84C4V7TS;DI_BZX84C4V7TS;Diodes;Zener <=10V; 4.70V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C4V7TS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.20
.MODEL DF D ( IS=17.5p RS=32.6 N=1.10
+ CJO=74.9p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.51f RS=64.5 N=3.00 ).ENDS



*SRC=BZX84C4V7W;DI_BZX84C4V7W;Diodes;Zener <=10V; 4.70V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C4V7W  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.20
.MODEL DF D ( IS=17.5p RS=32.6 N=1.10
+ CJO=74.9p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.51f RS=64.5 N=3.00 ).ENDS



*SRC=BZX84C5V1S;DI_BZX84C5V1S;Diodes;Zener <=10V; 5.10V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C5V1S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.70
.MODEL DF D ( IS=16.2p RS=32.3 N=1.10
+ CJO=66.2p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.23f RS=44.5 N=3.00 ).ENDS



*SRC=BZX84C5V1T;DI_BZX84C5V1T;Diodes;Zener <=10V; 5.10V  0.150W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C5V1T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.67
.MODEL DF D ( IS=12.1p RS=31.5 N=1.10
+ CJO=66.2p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.42f RS=44.5 N=3.00 ).ENDS



*SRC=BZX84C5V1TS;DI_BZX84C5V1TS;Diodes;Zener <=10V; 5.10V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C5V1TS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.70
.MODEL DF D ( IS=16.2p RS=32.3 N=1.10
+ CJO=66.2p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.23f RS=44.5 N=3.00 ).ENDS



*SRC=BZX84C5V1W;DI_BZX84C5V1W;Diodes;Zener <=10V; 5.10V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C5V1W  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.70
.MODEL DF D ( IS=16.2p RS=32.3 N=1.10
+ CJO=66.2p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.23f RS=44.5 N=3.00 ).ENDS



*SRC=BZX84C5V6S;DI_BZX84C5V6S;Diodes;Zener <=10V; 5.60V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C5V6S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 3.29
.MODEL DF D ( IS=14.7p RS=32.1 N=1.10
+ CJO=57.6p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.94f RS=24.5 N=3.00 ).ENDS



*SRC=BZX84C5V6T;DI_BZX84C5V6T;Diodes;Zener <=10V; 5.60V  0.150W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C5V6T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 3.27
.MODEL DF D ( IS=11.0p RS=31.2 N=1.10
+ CJO=57.6p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.21f RS=24.5 N=3.00 ).ENDS



*SRC=BZX84C5V6TS;DI_BZX84C5V6TS;Diodes;Zener <=10V; 5.60V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C5V6TS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 3.29
.MODEL DF D ( IS=14.7p RS=32.1 N=1.10
+ CJO=57.6p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.94f RS=24.5 N=3.00 ).ENDS



*SRC=BZX84C5V6W;DI_BZX84C5V6W;Diodes;Zener <=10V; 5.60V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C5V6W  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 3.29
.MODEL DF D ( IS=14.7p RS=32.1 N=1.10
+ CJO=57.6p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.94f RS=24.5 N=3.00 ).ENDS



*SRC=BZX84C6V2S;DI_BZX84C6V2S;Diodes;Zener <=10V; 6.20V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C6V2S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.10
.MODEL DF D ( IS=13.3p RS=31.8 N=1.10
+ CJO=49.4p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.66f RS=2.30 N=1.49 ).ENDS



*SRC=BZX84C6V2T;DI_BZX84C6V2T;Diodes;Zener <=10V; 6.20V  0.150W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C6V2T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.09
.MODEL DF D ( IS=9.97p RS=31.0 N=1.10
+ CJO=49.4p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.99f RS=2.30 N=1.49 ).ENDS



*SRC=BZX84C6V2TS;DI_BZX84C6V2TS;Diodes;Zener <=10V; 6.20V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C6V2TS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.10
.MODEL DF D ( IS=13.3p RS=31.8 N=1.10
+ CJO=49.4p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.66f RS=2.30 N=1.49 ).ENDS



*SRC=BZX84C6V2W;DI_BZX84C6V2W;Diodes;Zener <=10V; 6.20V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C6V2W  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.10
.MODEL DF D ( IS=13.3p RS=31.8 N=1.10
+ CJO=49.4p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.66f RS=2.30 N=1.49 ).ENDS



*SRC=BZX84C6V8S;DI_BZX84C6V8S;Diodes;Zener <=10V; 6.80V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C6V8S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.15
.MODEL DF D ( IS=12.1p RS=31.5 N=1.10
+ CJO=43.0p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.42f RS=3.45 N=2.23 ).ENDS



*SRC=BZX84C6V8T;DI_BZX84C6V8T;Diodes;Zener <=10V; 6.80V  0.150W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C6V8T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.13
.MODEL DF D ( IS=9.09p RS=30.7 N=1.10
+ CJO=43.0p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.82f RS=3.45 N=2.23 )
.ENDS


*SRC=BZX84C6V8TS;DI_BZX84C6V8TS;Diodes;Zener <=10V; 6.80V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C6V8TS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.15
.MODEL DF D ( IS=12.1p RS=31.5 N=1.10
+ CJO=43.0p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.42f RS=3.45 N=2.23 ).ENDS



*SRC=BZX84C6V8W;DI_BZX84C6V8W;Diodes;Zener <=10V; 6.80V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C6V8W  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.15
.MODEL DF D ( IS=12.1p RS=31.5 N=1.10
+ CJO=43.0p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.42f RS=3.45 N=2.23 ).ENDS



*SRC=BZX84C7V5S;DI_BZX84C7V5S;Diodes;Zener <=10V; 7.50V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C7V5S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.84
.MODEL DF D ( IS=11.0p RS=31.2 N=1.10
+ CJO=37.1p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.20f RS=3.45 N=2.23 ).ENDS



*SRC=BZX84C7V5T;DI_BZX84C7V5T;Diodes;Zener <=10V; 7.50V  0.150W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C7V5T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.82
.MODEL DF D ( IS=8.24p RS=30.4 N=1.10
+ CJO=37.1p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.65f RS=3.45 N=2.23 ).ENDS



*SRC=BZX84C7V5TS;DI_BZX84C7V5TS;Diodes;Zener <=10V; 7.50V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C7V5TS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.84
.MODEL DF D ( IS=11.0p RS=31.2 N=1.10
+ CJO=37.1p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.20f RS=3.45 N=2.23 ).ENDS



*SRC=BZX84C7V5W;DI_BZX84C7V5W;Diodes;Zener <=10V; 7.50V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C7V5W  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.84
.MODEL DF D ( IS=11.0p RS=31.2 N=1.10
+ CJO=37.1p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.20f RS=3.45 N=2.23 ).ENDS



*SRC=BZX84C8V2S;DI_BZX84C8V2S;Diodes;Zener <=10V; 8.20V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C8V2S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 6.53
.MODEL DF D ( IS=10.0p RS=31.0 N=1.10
+ CJO=32.5p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.01f RS=3.45 N=2.23 ).ENDS



*SRC=BZX84C8V2T;DI_BZX84C8V2T;Diodes;Zener <=10V; 8.20V  0.150W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C8V2T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 6.52
.MODEL DF D ( IS=7.54p RS=30.2 N=1.10
+ CJO=32.5p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.51f RS=3.45 N=2.23 ).ENDS



*SRC=BZX84C8V2TS;DI_BZX84C8V2TS;Diodes;Zener <=10V; 8.20V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C8V2TS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 6.53
.MODEL DF D ( IS=10.0p RS=31.0 N=1.10
+ CJO=32.5p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.01f RS=3.45 N=2.23 ).ENDS



*SRC=BZX84C8V2W;DI_BZX84C8V2W;Diodes;Zener <=10V; 8.20V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C8V2W  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 6.53
.MODEL DF D ( IS=10.0p RS=31.0 N=1.10
+ CJO=32.5p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.01f RS=3.45 N=2.23 ).ENDS



*SRC=BZX84C9V1S;DI_BZX84C9V1S;Diodes;Zener <=10V; 9.10V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C9V1S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 7.43
.MODEL DF D ( IS=9.05p RS=30.7 N=1.10
+ CJO=27.8p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.81f RS=3.45 N=2.23 ).ENDS



*SRC=BZX84C9V1T;DI_BZX84C9V1T;Diodes;Zener <=10V; 9.10V  0.150W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C9V1T  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 7.41
.MODEL DF D ( IS=6.79p RS=29.9 N=1.10
+ CJO=27.8p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.36f RS=3.45 N=2.23 ).ENDS



*SRC=BZX84C9V1TS;DI_BZX84C9V1TS;Diodes;Zener <=10V; 9.10V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C9V1TS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 7.43
.MODEL DF D ( IS=9.05p RS=30.7 N=1.10
+ CJO=27.8p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.81f RS=3.45 N=2.23 ).ENDS



*SRC=BZX84C9V1W;DI_BZX84C9V1W;Diodes;Zener <=10V; 9.10V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZX84C9V1W  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 7.43
.MODEL DF D ( IS=9.05p RS=30.7 N=1.10
+ CJO=27.8p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.81f RS=3.45 N=2.23 ).ENDS



*SRC=DFLZ10;DI_DFLZ10;Diodes;Zener <=10V; 10.0V  1.00W   DIODES INC ZENER
*SYM=HZEN
.SUBCKT DI_DFLZ10  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 8.86
.MODEL DF D ( IS=41.2p RS=0.773 N=1.10
+ CJO=622p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.24f RS=0.230 N=1.49 ).ENDS



*SRC=DFLZ11;DI_DFLZ11;Diodes;Zener 10V-50V; 11.0V  1.00W   DIODES INC ZENER
*SYM=HZEN
.SUBCKT DI_DFLZ11  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 8.58
.MODEL DF D ( IS=37.5p RS=0.759 N=1.10
+ CJO=478p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=7.49f RS=2.45 N=3.00 ).ENDS


*SRC=DFLZ12;DI_DFLZ12;Diodes;Zener 10V-50V; 12.0V  1.00W   DIODES INC ZENER
*SYM=HZEN
.SUBCKT DI_DFLZ12  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 9.58
.MODEL DF D ( IS=34.3p RS=0.747 N=1.10
+ CJO=427p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.87f RS=2.45 N=3.00 ).ENDS



*SRC=DFLZ13;DI_DFLZ13;Diodes;Zener 10V-50V; 13.0V  1.00W   DIODES INC ZENER
*SYM=HZEN
.SUBCKT DI_DFLZ13  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 10.5
.MODEL DF D ( IS=31.7p RS=0.736 N=1.10
+ CJO=415p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.34f RS=3.45 N=3.00 ).ENDS



*SRC=DFLZ15;DI_DFLZ15;Diodes;Zener 10V-50V; 15.0V  1.00W   DIODES INC ZENER
*SYM=HZEN
.SUBCKT DI_DFLZ15  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 12.5
.MODEL DF D ( IS=27.5p RS=0.715 N=1.10
+ CJO=402p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.49f RS=3.45 N=3.00 ).ENDS



*SRC=DFLZ16;DI_DFLZ16;Diodes;Zener 10V-50V; 16.0V  1.00W   DIODES INC ZENER
*SYM=HZEN
.SUBCKT DI_DFLZ16  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 13.7
.MODEL DF D ( IS=25.7p RS=0.706 N=1.10
+ CJO=371p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.15f RS=2.89 N=3.00 )
.ENDS



*SRC=DFLZ18;DI_DFLZ18;Diodes;Zener 10V-50V; 18.0V  1.00W   DIODES INC ZENER
*SYM=HZEN
.SUBCKT DI_DFLZ18  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 15.6
.MODEL DF D ( IS=22.9p RS=0.689 N=1.10
+ CJO=332p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.58f RS=2.89 N=3.00 ).ENDS



*SRC=DFLZ20;DI_DFLZ20;Diodes;Zener 10V-50V; 20.0V  1.00W   DIODES INC ZENER
*SYM=HZEN
.SUBCKT DI_DFLZ20  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 17.6
.MODEL DF D ( IS=20.6p RS=0.674 N=1.10
+ CJO=313p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.12f RS=2.89 N=3.00 ).ENDS



*SRC=DFLZ22;DI_DFLZ22;Diodes;Zener 10V-50V; 22.0V  1.00W   DIODES INC ZENER
*SYM=HZEN
.SUBCKT DI_DFLZ22  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 19.6
.MODEL DF D ( IS=18.7p RS=0.661 N=1.10
+ CJO=277p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.75f RS=2.89 N=3.00 ).ENDS



*SRC=DFLZ24;DI_DFLZ24;Diodes;Zener 10V-50V; 24.0V  1.00W   DIODES INC ZENER
*SYM=HZEN
.SUBCKT DI_DFLZ24  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 21.6
.MODEL DF D ( IS=17.2p RS=0.648 N=1.10
+ CJO=259p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.43f RS=2.89 N=3.00 ).ENDS



*SRC=DFLZ27;DI_DFLZ27;Diodes;Zener 10V-50V; 27.0V  1.00W   DIODES INC ZENER
*SYM=HZEN
.SUBCKT DI_DFLZ27  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 24.6
.MODEL DF D ( IS=15.3p RS=0.631 N=1.10
+ CJO=253p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.05f RS=2.89 N=3.00 ).ENDS



*SRC=DFLZ33;DI_DFLZ33;Diodes;Zener 10V-50V; 33.0V  1.00W   DIODES INC ZENER
*SYM=HZEN
.SUBCKT DI_DFLZ33  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 30.6
.MODEL DF D ( IS=12.5p RS=0.603 N=1.10
+ CJO=220p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.50f RS=2.89 N=3.00 )
.ENDS



*SRC=DFLZ36;DI_DFLZ36;Diodes;Zener 10V-50V; 36.0V  1.00W   DIODES INC ZENER
*SYM=HZEN
.SUBCKT DI_DFLZ36  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 34.9
.MODEL DF D ( IS=11.4p RS=0.590 N=1.10
+ CJO=220p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.29f RS=1.15 N=1.49 )
.ENDS



*SRC=DFLZ39;DI_DFLZ39;Diodes;Zener 10V-50V; 39.0V  1.00W   DIODES INC ZENER
*SYM=HZEN
.SUBCKT DI_DFLZ39  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 37.9
.MODEL DF D ( IS=10.6p RS=0.579 N=1.10
+ CJO=220p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.11f RS=1.15 N=1.49 )
.ENDS



*SRC=DFLZ5V1;DI_DFLZ5V1;Diodes;Zener <=10V; 5.10V  1.00W   DIODES INC ZENER
*SYM=HZEN
.SUBCKT DI_DFLZ5V1  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.69
.MODEL DF D ( IS=80.8p RS=0.869 N=1.10
+ CJO=1.80n VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=16.2f RS=1.22 N=3.00 ).ENDS



*SRC=DFLZ5V6;DI_DFLZ5V6;Diodes;Zener <=10V; 5.60V  1.00W   DIODES INC ZENER
*SYM=HZEN
.SUBCKT DI_DFLZ5V6  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 3.30
.MODEL DF D ( IS=73.6p RS=0.856 N=1.10
+ CJO=1.52n VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=14.7f RS=0.230 N=2.97 ).ENDS



*SRC=DFLZ6V2;DI_DFLZ6V2;Diodes;Zener <=10V; 6.20V  1.00W   DIODES INC ZENER
*SYM=HZEN
.SUBCKT DI_DFLZ6V2  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 3.89
.MODEL DF D ( IS=66.5p RS=0.841 N=1.10
+ CJO=1.26n VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=13.3f RS=0.230 N=2.97 ).ENDS



*SRC=DFLZ6V8;DI_DFLZ6V8;Diodes;Zener <=10V; 6.80V  1.00W   DIODES INC ZENER
*SYM=HZEN
.SUBCKT DI_DFLZ6V8  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 4.49
.MODEL DF D ( IS=60.6p RS=0.828 N=1.10
+ CJO=1.02n VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=12.1f RS=0.230 N=2.97 ).ENDS



*SRC=DFLZ7V5;DI_DFLZ7V5;Diodes;Zener <=10V; 7.50V  1.00W   DIODES INC ZENER
*SYM=HZEN
.SUBCKT DI_DFLZ7V5  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.18
.MODEL DF D ( IS=54.9p RS=0.814 N=1.10
+ CJO=926p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=11.0f RS=0.230 N=2.97 ).ENDS



*DIODES_INC_SPICE_MODEL
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=8Aug2016
*VERSION=1

.SUBCKT DDZ4V7ASF  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 1 2 DR
.MODEL DF D ( IS=15f RS=.15 N=1.07
+ CJO=46.3p VJ=0.750 M=0.330 TT=10.1n BV=4.31 IBV=6u TBV1=.1m ISR=50f)
.MODEL DR D ( IS=10f RS=3k N=10 BV=2.5 IBV=10p ISR=150p Eg=1.4 TBV1=-.1m)
.ENDS



*                (c)  2016 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*DIODES_INC_SPICE_MODEL
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=07Sep2016
*VERSION=1

.SUBCKT DDZ17  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 1 2 DR
.MODEL DF D ( IS=55f RS=.075 N=1.15
+ CJO=46.3p VJ=0.750 M=0.330 TT=10.1n BV=16.85 IBV=10u TBV1=.4m IKF=30m EG=1.16)
.MODEL DR D ( IS=5f RS=6k N=10 BV=16 IBV=1p ISR=1f Eg=.08 TBV1=-1m)
.ENDS



*                (c)  2016 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*SRC=1N4148WS;1N4148WS;Diodes;Si;  75.0V  0.300A  4.00ns   Diodes Inc.
Switching Diode
.MODEL 1N4148WS D  ( IS=10.4n RS=51.5m BV=75.0 IBV=1.00u
+ CJO=2.00p  M=0.333 N=2.07 TT=5.76n )


*SRC=1N4148WT;DI_1N4148WT;Diodes;Si;  80.0V  0.125A  4.00ns   Diodes Inc.
Switching
.MODEL DI_1N4148WT D  ( IS=111n RS=0.628 BV=80.0 IBV=1.00u
+ CJO=2.00p  M=0.333 N=1.70 TT=5.76n )


*SRC=1N4448HLP;DI_1N4448HLP;Diodes;Si;  80.0V  0.250A  4.00ns   Diodes Inc. Switching Diode
.MODEL DI_1N4448HLP D  ( IS=3.2n RS=0.761 BV=100.0 IBV=100n ISR=5n
+ CJO=1.3p  M=0.21 VJ=.5 N=1.88 TT=3n )


*SRC=1N4448HWS;DI_1N4448HWS;Diodes;Si;  80.0V  0.500A  4.00ns   Diodes Inc. Switching Diode
.MODEL DI_1N4448HWS D  ( IS=24.7n RS=84.4m BV=80.0 IBV=100n
+ CJO=3.50p  M=0.333 N=2.12 TT=5.76n )


*SRC=1N4448HWT;DI_1N4448HWT;Diodes;Si;  80.0V  0.250A  4.00ns   Diodes Inc.
Switching
.MODEL DI_1N4448HWT D  ( IS=137f RS=0.168 BV=80.0 IBV=100n
+ CJO=3.56p  M=0.333 N=1.11 TT=5.76n )


*SRC=1N4448W;DI_1N4448W;Diodes;Si;  75.0V  0.250A  4.00ns   Diodes Inc. 
.MODEL DI_1N4448W D  ( IS=355p RS=0.168 BV=75.0 IBV=2.50u
+ CJO=4.00p  M=0.333 N=1.70 TT=5.76n )


*SRC=1N4448WS;DI_1N4448WS;Diodes;Si;  75.0V  0.500A  4.00ns   Diodes Inc. Switching Diode
.MODEL DI_1N4448WS D  ( IS=24.7n RS=84.4m BV=75.0 IBV=2.50u
+ CJO=4.00p  M=0.333 N=2.12 TT=5.76n )


*SRC=BAL99;DI_BAL99;Diodes;Si;  75.0V  0.300A  4.00ns   Diodes Inc.
Switching Diode
.MODEL DI_BAL99 D  ( IS=31.2n RS=0.360 BV=75.0 IBV=2.50u
+ CJO=1.72p  M=0.333 N=2.35 TT=5.76n )


*SRC=MMBD4148;DI_MMBD4148;Diodes;Si;  75.0V  0.300A  4.00ns   Diodes Inc. Switching 
.MODEL DI_MMBD4148 D  ( IS=126n RS=0.140 BV=75.0 IBV=1.00u 
+ CJO=2.65p  M=0.333 N=2.60 TT=5.76n )


*SRC=BAS16LP;DI_BAS16LP;Diodes;Si;  75.0V  0.300A  4.00ns   Diodes Inc. Switching Diode
.MODEL DI_BAS16LP D  ( IS=74.3n RS=0.699 BV=75.0 IBV=1.00u
+ CJO=2.00p  M=0.333 N=2.35 TT=5.76n )


*SRC=BAS16T;DI_BAS16T;Diodes;Si;  85.0V  0.155A  4.00ns   Diodes Inc.
Switching Diode
.MODEL DI_BAS16T D  ( IS=2.69n RS=0.271 BV=85.0 IBV=2.00u
+ CJO=1.99p  M=0.333 N=1.95 TT=5.76n
************************************************************************************************************************


*SRC=BAS16TW;DI_BAS16TW;Diodes;Si;  75.0V  0.300A  4.00ns   Diodes Inc.
Switching Diode
.MODEL DI_BAS16TW D  ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u
+ CJO=1.72p  M=0.333 N=2.34 TT=5.76n )


*SRC=BAS16V;DI_BAS16V;Diodes;Si;  75.0V  0.300A  4.00ns   Diodes Inc. Switching diode - one element of device
.MODEL DI_BAS16V D  ( IS=412p RS=0.140 BV=75.0 IBV=1.00u
+ CJO=1.72p  M=0.333 N=1.70 TT=5.76n )


*SRC=BAS16W;DI_BAS16W;Diodes;Si;  75.0V  0.300A  4.00ns   Diodes Inc.
Switching Diode
.MODEL DI_BAS16W D  ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u
+ CJO=1.72p  M=0.333 N=2.34 TT=5.76n )


*SRC=BAS19;DI_BAS19;Diodes;Si;  100V  0.400A  50.0ns   Diodes Inc.
Switching Diode
.MODEL DI_BAS19 D  ( IS=41.7n RS=0.270 BV=100 IBV=100n
+ CJO=2.98p  M=0.333 N=2.35 TT=72.0n )


*SRC=BAS19W;DI_BAS19W;Diodes;Si;  100V  0.400A  50.0ns   Diodes Inc.
Switching Diode
.MODEL DI_BAS19W D  ( IS=114n RS=0.172 BV=100 IBV=100n
+ CJO=2.98p  M=0.333 N=2.58 TT=72.0n )


*SRC=BAS20;DI_BAS20;Diodes;Si;  150V  0.400A  50.0ns   Diodes Inc.
Switching Diode
.MODEL DI_BAS20 D  ( IS=41.7n RS=0.270 BV=150 IBV=100n
+ CJO=2.98p  M=0.333 N=2.35 TT=72.0n )


*SRC=BAS20DW;DI_BAS20DW;Diodes;Si;  200V  0.300A  50.0ns   Diodes Inc. Single Element of Dual BAS20DW
.MODEL DI_BAS20DW D  ( IS=2.86n RS=0.141 BV=200 IBV=100n
+ CJO=2.98p  M=0.333 N=1.95 TT=72.0n )


*SRC=BAS20W;DI_BAS20W;Diodes;Si;  150V  0.400A  50.0ns   Diodes Inc.
Switching Diode
.MODEL DI_BAS20W D  ( IS=114n RS=0.172 BV=150 IBV=100n
+ CJO=2.98p  M=0.333 N=2.58 TT=72.0n )


*SRC=BAS21;DI_BAS21;Diodes;Si;  200V  0.400A  50.0ns   Diodes Inc.
Switching Diode
.MODEL DI_BAS21 D  ( IS=41.7n RS=0.270 BV=200 IBV=100n
+ CJO=2.98p  M=0.333 N=2.35 TT=72.0n )


*SRC=BAS21DW;DI_BAS21DW;Diodes;Si;  250V  0.300A  50.0ns   Diodes Inc. Single Element of Dual BAS21DW
.MODEL DI_BAS21DW D  ( IS=2.86n RS=0.141 BV=250 IBV=100n
+ CJO=2.98p  M=0.333 N=1.95 TT=72.0n )


*SRC=BAS21T;DI_BAS21T;Diodes;Si;  200V  0.400A  50.0ns   Diodes Inc. Switching Diode
.MODEL DI_BAS21T D  ( IS=401n RS=0.105 BV=200 IBV=100n
+ CJO=5.00p  M=0.333 N=2.87 TT=72.0n )


*SRC=BAS21W;DI_BAS21W;Diodes;Si;  200V  0.400A  50.0ns   Diodes Inc.
Switching Diode
.MODEL DI_BAS21W D  ( IS=114n RS=0.172 BV=200 IBV=100n
+ CJO=2.98p  M=0.333 N=2.58 TT=72.0n )


*SRC=BAV116W;DI_BAV116W;Diodes;Si;  130V  0.215A  3.00us   Diodes Inc. Low leakage diode
.MODEL DI_BAV116W D  ( IS=22.5p RS=0.282 BV=130 IBV=5.00n
+ CJO=2.40p  M=0.333 N=1.67 TT=4.32u )


*SRC=BAV16W;BAV16W;Diodes;Si;  75.0V  0.300A  4.00ns   Diodes Inc. -
.MODEL BAV16W D  ( IS=10.4n RS=51.5m BV=75.0 IBV=1.00u
+ CJO=2.00p  M=0.333 N=2.07 TT=5.76n )


*SRC=BAV16WS;BAV16WS;Diodes;Si;  75.0V  0.300A  4.00ns   Diodes Inc.
Switching Diode
.MODEL BAV16WS D  ( IS=10.4n RS=51.5m BV=75.0 IBV=1.00u
+ CJO=2.00p  M=0.333 N=2.07 TT=5.76n )


*SRC=BAV170;DI_BAV170;Diodes;Si;  85.0V  0.215A  3.00us   Diodes, Inc. diode
.MODEL DI_BAV170 D  ( IS=31.5p RS=0.195 BV=85.0 IBV=5.00n
+ CJO=2.00p  M=0.333 N=1.70 TT=4.32u


*SRC=BAV170T;DI_BAV170T;Diodes;Si;  85.0V  0.125A  3.00us   Diodes Inc. Switching Diode, dual, model for one element
.MODEL DI_BAV170T D  ( IS=10.5p RS=0.196 BV=85.0 IBV=5.00n
+ CJO=2.00p  M=0.333 N=1.61 TT=4.32u )


*SRC=BAV199;DI_BAV199;Diodes;Si;  85.0V  0.160A  3.00us   Diodes, Inc. diode
.MODEL DI_BAV199 D  ( IS=59.0p RS=0.262 BV=85.0 IBV=5.00n
+ CJO=2.00p  M=0.333 N=1.78 TT=4.32u )


*SRC=BAV199DW;DI_BAV199DW;Diodes;Si;  85.0V  0.160A  3.00us   Diodes, Inc.
Switching - one element of BAV199DW array
.MODEL DI_BAV199DW D  ( IS=59.0p RS=0.262 BV=85.0 IBV=5.00n
+ CJO=2.00p  M=0.333 N=1.78 TT=4.32u )


*SRC=BAV199T;DI_BAV199T;Diodes;Si;  85.0V  0.125A  3.00us   Diodes Inc. Switching Diode, dual, model for one element
.MODEL DI_BAV199T D  ( IS=10.5p RS=0.196 BV=85.0 IBV=5.00n
+ CJO=2.00p  M=0.333 N=1.61 TT=4.32u )


*SRC=BAV199W;DI_BAV199W;Diodes;Si;  85.0V  0.160A  3.00us   Diodes Inc. Switching Diode
.MODEL DI_BAV199W D  ( IS=22.5p RS=0.264 BV=85.0 IBV=10.0u
+ CJO=2.00  M=0.333 N=1.70 TT=4.32u )


*SRC=BAV19W;BAV19W;Diodes;Si;  100V  0.400A  50.0ns   Diodes Inc. -
.MODEL BAV19W D  ( IS=1.09u RS=0.105 BV=100 IBV=100n
+ CJO=5.00p  M=0.333 N=3.29 TT=72.0n )


*SRC=BAV19WS;BAV19WS;Diodes;Si;  100V  0.400A  50.0ns   Diodes Inc.
Switching Diode
.MODEL BAV19WS D  ( IS=1.09u RS=0.105 BV=100 IBV=100n
+ CJO=5.00p  M=0.333 N=3.29 TT=72.0n )


*SRC=BAV20W;DI_BAV20W;Diodes;Si;  150V  0.400A  50.0ns   Diodes Inc. -
.MODEL DI_BAV20W D  ( IS=1.09u RS=0.105 BV=150 IBV=100n
+ CJO=5.00p  M=0.333 N=3.29 TT=72.0n )


*SRC=BAV20WS;DI_BAV20WS;Diodes;Si;  150V  0.400A  50.0ns   Diodes Inc.
Switching Diode
.MODEL DI_BAV20WS D  ( IS=1.09u RS=0.105 BV=150 IBV=100n
+ CJO=5.00p  M=0.333 N=3.29 TT=72.0n )


*SRC=BAV21W;DI_BAV21W;Diodes;Si;  200V  0.400A  50.0ns   Diodes Inc. -
.MODEL DI_BAV21W D  ( IS=1.09u RS=0.105 BV=200 IBV=100n
+ CJO=5.00p  M=0.333 N=3.29 TT=72.0n )


*SRC=BAV21WS;DI_BAV21WS;Diodes;Si;  200V  0.400A  50.0ns   Diodes Inc.
Switching Diode
.MODEL DI_BAV21WS D  ( IS=1.09u RS=0.105 BV=200 IBV=100n
+ CJO=5.00p  M=0.333 N=3.29 TT=72.0n )


*SRC=BAV23A;DI_BAV23A;Diodes;Si;  200V  0.400A  50.0ns   Diodes Inc. Switching Diode 
.MODEL DI_BAV23A D  ( IS=237n RS=0.260 BV=200 IBV=100n 
+ CJO=3.05p  M=0.333 N=2.69 TT=72.0n )


*SRC=BAV23C;DI_BAV23C;Diodes;Si;  200V  0.400A  50.0ns   Diodes Inc. Switching Diode 
.MODEL DI_BAV23C D  ( IS=237n RS=0.260 BV=200 IBV=100n 
+ CJO=3.05p  M=0.333 N=2.69 TT=72.0n )


*SRC=BAV23S;DI_BAV23S;Diodes;Si;  200V  0.400A  50.0ns   Diodes Inc. Switching Diode 
.MODEL DI_BAV23S D  ( IS=237n RS=0.260 BV=200 IBV=100n 
+ CJO=3.05p  M=0.333 N=2.69 TT=72.0n )


*SRC=BAV3004W;DI_BAV3004W;Diodes;Si;  350V  0.225A  50.0ns   Diodes, Inc. switching
.MODEL DI_BAV3004W D  ( IS=58.9n RS=0.412 BV=350 IBV=100n
+ CJO=1.17p  M=0.333 N=2.37 TT=72.0n )


*SRC=BAV3004WS;DI_BAV3004WS;Diodes;Si;  350V  0.225A  50.0ns   Diodes, Inc. switching
.MODEL DI_BAV3004W D  ( IS=58.9n RS=0.412 BV=350 IBV=100n
+ CJO=1.17p  M=0.333 N=2.37 TT=72.0n )


*SRC=BAV70;DI_BAV70;Diodes;Si;  75.0V  0.300A  4.00ns   Diodes, Inc. switching
.MODEL DI_BAV70 D  ( IS=308p RS=0.329 BV=75.0 IBV=2.50u
+ CJO=2.65p  M=0.333 N=1.70 TT=5.76n )


*SRC=BAV70T;DI_BAV70T;Diodes;Si;  85.0V  0.155A  4.00ns   Diodes Inc.
Switching Diode - one element of device
.MODEL DI_BAV70T D  ( IS=2.69n RS=0.271 BV=85.0 IBV=2.00u
+ CJO=1.99p  M=0.333 N=1.95 TT=5.76n )


*SRC=BAV70W;DI_BAV70W;Diodes;Si;  75.0V  0.300A  4.00ns   Diodes Inc.
Switching Diode
.MODEL DI_BAV70W D  ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u
+ CJO=1.72p  M=0.333 N=2.34 TT=5.76n )


*SRC=BAV756DW;DI_BAV756DW;Diodes;Si;  75.0V  0.300A  4.00ns   Diodes Inc. Switching - one element of device 
.MODEL DI_BAV756DW D  ( IS=49.2n RS=0.141 BV=75.0 IBV=2.50u 
+ CJO=2.65p  M=0.333 N=2.45 TT=5.76n )


*SRC=BAV99;DI_BAV99;Diodes;Si;  75.0V  0.300A  4.00ns   Diodes Inc.
switching
.MODEL DI_BAV99 D  ( IS=261p RS=0.140 BV=75.0 IBV=2.50u
+ CJO=1.19p  M=0.333 N=1.70 TT=5.76n )


*SRC=BAV99BRW;DI_BAV99BRW;Diodes;Si;  75.0V  0.300A  4.00ns   Diodes Inc. Switching Diode, Quad, Model for one element
.MODEL DI_BAV99BRW D  ( IS=412p RS=0.140 BV=75.0 IBV=2.50u
+ CJO=2.00p  M=0.333 N=1.70 TT=5.76n )


*SRC=BAV99T;DI_BAV99T;Diodes;Si;  85.0V  0.155A  4.00ns   Diodes Inc.
Switching Diode - one element of device
.MODEL DI_BAV99T D  ( IS=2.69n RS=0.271 BV=85.0 IBV=2.00u
+ CJO=1.99p  M=0.333 N=1.95 TT=5.76n )


*SRC=BAV99W;DI_BAV99W;Diodes;Si;  75.0V  0.300A  4.00ns   Diodes Inc.
Switching Diode
.MODEL DI_BAV99W D  ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u
+ CJO=1.72p  M=0.333 N=2.34 TT=5.76n )


*SRC=BAW156;DI_BAW156;Diodes;Si;  85.0V  0.160A  3.00us   Diodes, Inc. diode
.MODEL DI_BAW156 D  ( IS=59.0p RS=0.262 BV=85.0 IBV=5.00n
+ CJO=2.00p  M=0.333 N=1.78 TT=4.32u )


*SRC=BAW156T;DI_BAW156T;Diodes;Si;  85.0V  0.125A  3.00us   Diodes Inc. Switching Diode, dual, model for one element
.MODEL DI_BAW156T D  ( IS=10.5p RS=0.196 BV=85.0 IBV=5.00n
+ CJO=2.00p  M=0.333 N=1.61 TT=4.32u )


*SRC=BAW56;DI_BAW56;Diodes;Si;  75.0V  0.300A  4.00ns   Diodes Inc. Switching Diode 
.MODEL DI_BAW56 D  ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u 
+ CJO=1.72p  M=0.333 N=2.34 TT=5.76n )


*SRC=BAW567DW;DI_BAW567DW;Diodes;Si;  75.0V  0.300A  4.00ns   Diodes Inc. Switching Diode 
.MODEL DI_BAW567DW D  ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u 
+ CJO=1.72p  M=0.333 N=2.34 TT=5.76n )


*SRC=BAW56DW;DI_BAW56DW;Diodes;Si;  75.0V  0.300A  4.00ns   Diodes Inc. Switching Diode 
.MODEL DI_BAW56DW D  ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u 
+ CJO=1.72p  M=0.333 N=2.34 TT=5.76n )


*SRC=BAW56T;DI_BAW56T;Diodes;Si;  85.0V  0.155A  4.00ns   Diodes Inc.
Switching Diode - one element of device
.MODEL DI_BAW56T D  ( IS=2.69n RS=0.271 BV=85.0 IBV=2.00u
+ CJO=1.99p  M=0.333 N=1.95 TT=5.76n )


*SRC=BAW56W;DI_BAW56W;Diodes;Si;  75.0V  0.300A  4.00ns   Diodes Inc.
Switching Diode
.MODEL DI_BAW56W D  ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u
+ CJO=1.72p  M=0.333 N=2.34 TT=5.76n )


*SRC=MMBD2004S;DI_MMBD2004S;Diodes;Si;  240V  0.225A  50.0ns   Diodes Inc. Switching 
.MODEL DI_MMBD2004S D  ( IS=1.76u RS=0.187 BV=240 IBV=100n 
+ CJO=6.63p  M=0.333 N=1.70 TT=72.0n )


*SRC=MMBD2004SW;DI_MMBD2004SW;Diodes;Si;  240V  0.225A  50.0ns   Diodes Inc. Switching - one element of device
.MODEL DI_MMBD2004SW D  ( IS=1.76u RS=0.187 BV=240 IBV=100n
+ CJO=6.63p  M=0.333 N=1.70 TT=72.0n )


*SRC=MMBD3004S;DI_MMBD3004S;Diodes;Si;  300V  0.225A  50.0ns   Diodes Inc. Switching
D1  1 = A  2 = C  DI_MMBD3004A
.MODEL DI_MMBD3004A D
+ IS = 5.000n
+ N = 1.930
+ BV = 300.0
+ IBV = 100.0n
+ RS = 730.0m
+ CJO = 979.0f
+ M = 43.5m
+ TT = 72.0n
+ VJ = 390.5m


*SRC=MMBD3004BRM;DI_MMBD3004BRM;Diodes;Si;  300V  0.225A  50.0ns   Diodes Inc. Switching - one element of MMBD3004BRM
D1  1 = A  2 = C  DI_MMBD3004BRM
.MODEL DI_MMBD3004BRM D
+ IS = 5.000n
+ N = 1.930
+ BV = 300.0
+ IBV = 100.0n
+ RS = 730.0m
+ CJO = 979.0f
+ M = 43.5m
+ TT = 72.0n
+ VJ = 390.5m


*SRC=MMBD3004S;DI_MMBD3004S;Diodes;Si;  300V  0.225A  50.0ns   Diodes Inc. Switching
D1  1 = A  2 = C  DI_MMBD3004C
.MODEL DI_MMBD3004C D
+ IS = 5.000n
+ N = 1.930
+ BV = 300.0
+ IBV = 100.0n
+ RS = 730.0m
+ CJO = 979.0f
+ M = 43.5m
+ TT = 72.0n
+ VJ = 390.5m


*SRC=MMBD3004S;DI_MMBD3004S;Diodes;Si;  300V  0.225A  50.0ns   Diodes Inc. Switching
D1  1 = A  2 = C  DI_MMBD3004S
.MODEL DI_MMBD3004S D
+ IS = 5.000n
+ N = 1.930
+ BV = 300.0
+ IBV = 100.0n
+ RS = 730.0m
+ CJO = 979.0f
+ M = 43.5m
+ TT = 72.0n
+ VJ = 390.5m


*SRC=MMBD4148;DI_MMBD4148;Diodes;Si;  75.0V  0.250A  4.00ns   Diodes Inc. Switching Diode 
.MODEL DI_MMBD4148 D  ( IS=300n RS=0.422 BV=75.0 IBV=2.50u 
+ CJO=1.99p  M=0.333 N=2.77 TT=5.76n )


*SRC=MMBD4148PLM;MMBD4148PLM;Diodes;Si;  75.0V  0.300A  4.00ns   DIODES Inc 
.MODEL MMBD4148PLM D  ( IS=13.0u RS=0.140 BV=75.0 IBV=1.00u
+ CJO=2.00  M=0.333 N=4.97 TT=5.76n )


*SRC=MMBD4148W;DI_MMBD4148W;Diodes;Si;  75.0V  0.300A  4.00ns   Diodes Inc.
Switching Diode
.MODEL DI_MMBD4148W D  ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u
+ CJO=1.72p  M=0.333 N=2.34 TT=5.76n )


*SRC=MMBD4448;DI_MMBD4448;Diodes;Si;  75.0V  0.250A  4.00ns   Diodes Inc. Switching Diode
.MODEL DI_MMBD4448 D  ( IS=300n RS=0.422 BV=75.0 IBV=2.50u
+ CJO=1.99p  M=0.333 N=2.77 TT=5.76n )


*SRC=MMBD4448H;DI_MMBD4448H;Diodes;Si;  80.0V  0.250A  4.00ns   Diodes Inc. Switching Diode 
.MODEL DI_MMBD4448H D  ( IS=300n RS=0.422 BV=80.0 IBV=100n 
+ CJO=1.99p  M=0.333 N=2.77 TT=5.76n )


*SRC=MMBD4448HADW;DI_MMBD4448HADW;Diodes;Si;  80.0V  0.500A  1.50ns
Diodes Inc. Switching - model for one node of four
.MODEL DI_MMBD4448HADW D  ( IS=1.12n RS=84.0m BV=80.0 IBV=100n
+ CJO=2.92p  M=0.333 N=1.70 TT=2.16n )


*SRC=MMBD4448HAQW;DI_MMBD4448HAQW;Diodes;Si;  80.0V  0.500A  1.50ns
Diodes Inc. Switching - model for one node of four
.MODEL DI_MMBD4448HAQW D  ( IS=1.12n RS=84.0m BV=80.0 IBV=100n
+ CJO=2.92p  M=0.333 N=1.70 TT=2.16n )


*SRC=MMBD4448HCQW;DI_MMBD4448HCQW;Diodes;Si;  80.0V  0.500A  1.50ns
Diodes Inc. Switching - model for one node of four
.MODEL DI_MMBD4448HCQW D  ( IS=1.12n RS=84.0m BV=80.0 IBV=100n
+ CJO=2.92p  M=0.333 N=1.70 TT=2.16n )


*SRC=MMBD4448HSDW;DI_MMBD4448HSDW;Diodes;Si;  80.0V  0.500A  1.50ns
Diodes Inc. Switching - model for one node of four
.MODEL DI_MMBD4448HSDW D  ( IS=1.12n RS=84.0m BV=80.0 IBV=100n
+ CJO=2.92p  M=0.333 N=1.70 TT=2.16n )


**********************************************************************************************************************************************
*SRC=MMBD4448HT;DI_MMBD4448HT;Diodes;Si;  80.0V  0.500A  1.50ns
Diodes Inc. Switching
.MODEL DI_MMBD4448HT D  ( IS=1.12n RS=84.0m BV=80.0 IBV=100n
+ CJO=2.92p  M=0.333 N=1.70 TT=2.16n )
********************************************************************************************************************************************


**********************************************************************************************************************************************
*SRC=MMBD4448HTA;DI_MMBD4448HTA;Diodes;Si;  80.0V  0.500A  1.50ns
Diodes Inc. Switching - One node of two
.MODEL DI_MMBD4448HTA D  ( IS=1.12n RS=84.0m BV=80.0 IBV=100n
+ CJO=2.92p  M=0.333 N=1.70 TT=2.16n )
**********************************************************************************************************************************************


**********************************************************************************************************************************************
*SRC=MMBD4448HTC;DI_MMBD4448HTC;Diodes;Si;  80.0V  0.500A  1.50ns
Diodes Inc. Switching - One node of two
.MODEL DI_MMBD4448HTC D  ( IS=1.12n RS=84.0m BV=80.0 IBV=100n
+ CJO=2.92p  M=0.333 N=1.70 TT=2.16n )
**********************************************************************************************************************************************


**********************************************************************************************************************************************
*SRC=MMBD4448HTS;DI_MMBD4448HTS;Diodes;Si;  80.0V  0.500A  1.50ns
Diodes Inc. Switching - One node of two
.MODEL DI_MMBD4448HTS D  ( IS=1.12n RS=84.0m BV=80.0 IBV=100n
+ CJO=2.92p  M=0.333 N=1.70 TT=2.16n )
**********************************************************************************************************************************************


*SRC=MMBD4448HTW;DI_MMBD4448HTW;Diodes;Si;  80.0V  0.500A  1.50ns
Diodes Inc. Switching - model for one node of three
.MODEL DI_MMBD4448HTW D  ( IS=1.12n RS=84.0m BV=80.0 IBV=100n
+ CJO=2.92p  M=0.333 N=1.70 TT=2.16n )


*SRC=MMBD4448HW;DI_MMBD4448HW;Diodes;Si;  80.0V  0.500A  4.00ns   Diodes Inc. Switching Diode
.MODEL DI_MMBD4448HW D  ( IS=77.0n RS=84.0m BV=80.0 IBV=100n
+ CJO=1.99p  M=0.333 N=2.37 TT=5.76n )


*SRC=MMBD4448V;DI_MMBD4448V;Diodes;Si;  80.0V  0.500A  4.00ns   Diodes Inc. Switching - one element of device
.MODEL DI_MMBD4448V D  ( IS=4.77n RS=84.4m BV=80.0 IBV=100n
+ CJO=1.99p  M=0.333 N=1.95 TT=5.76n )


*SRC=MMBD4448W;DI_MMBD4448W;Diodes;Si;  75.0V  0.300A  4.00ns   Diodes Inc.
Switching Diode
.MODEL DI_MMBD4448W D  ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u
+ CJO=1.72p  M=0.333 N=2.34 TT=5.76n )


*SRC=MMBD7000;DI_MMBD7000;Diodes;Si;  75.0V  0.300A  4.00us   Diodes Inc. 
.MODEL DI_MMBD7000 D  ( IS=5.08n RS=0.140 BV=75.0 IBV=2.00u
+ CJO=2.00p  M=0.333 N=2.03 TT=5.76u )


*SRC=MMBD914;DI_MMBD914;Diodes;Si;  75.0V  0.300A  4.00ns   Diodes Inc. Switching 
.MODEL DI_MMBD914 D  ( IS=126n RS=0.140 BV=75.0 IBV=1.00u 
+ CJO=2.65p  M=0.333 N=2.60 TT=5.76n )


*SRC=SDA006;DI_SDA006;Diodes;Si;  75.0V  0.300A  4.00ns   Diodes Inc.
Databus Transient Suppressor - Model is for one Diode Element
.MODEL DI_SDA006 D  ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u
+ CJO=1.72p  M=0.333 N=2.34 TT=5.76n )


*SRC=DLPA004;DLPA004;Diodes;Si;  85.0V  0.300A  3.00us   DIODES Switching Diodes
.MODEL DLPA004 D  ( IS=42.4p RS=0.140 BV=85.0 IBV=2.50u
+ CJO=2.00p  M=0.333 N=1.70 TT=4.32u )


*SRC=MMBD7000HS;MMBD7000HS;Diodes;Si;  100V  0.300A  4.00ns   DIODES Switching Diode
.MODEL MMBD7000HS D  ( IS=412p RS=0.140 BV=100 IBV=3.00u
+ CJO=2.00p  M=0.333 N=1.70 TT=5.76n )


*SRC=MMBD7000HC;MMBD7000HC;Diodes;Si;  100V  0.300A  4.00ns   DIODES Switching Diode
.MODEL MMBD7000HC D  ( IS=412p RS=0.140 BV=100 IBV=3.00u
+ CJO=2.00p  M=0.333 N=1.70 TT=5.76n )


*SRC=MMBD5004BRM;MMBD5004BRM;Diodes;Si;  400V  1.25A  50.0ns   DIODES Switching diodes
.MODEL MMBD5004BRM D  ( IS=128n RS=33.6m BV=400 IBV=5.00u
+ CJO=2.00p  M=0.333 N=2.62 TT=72.0n )


*SRC=BAS521;BAS521;Diodes;Si;  300V  0.250A  50.0ns   DIODES Switching Diode
.MODEL BAS521 D  ( IS=74.8n RS=0.288 BV=300 IBV=150n
+ CJO=810f  M=0.333 N=2.41 TT=72.0n )


*SRC=BAS521LP;BAS521LP;Diodes;Si;  325V  0.250A  50.0ns   DIODES Switching Diode
.MODEL BAS521LP D  ( IS=74.8n RS=0.288 BV=325 IBV=150n
+ CJO=810f  M=0.333 N=2.41 TT=72.0n )


*SRC=BAW101S;BAW101S;Diodes;Si;  300V  0.250A  50.0ns   DIODES Switching Diode
.MODEL BAW101S D  ( IS=74.8n RS=0.288 BV=300 IBV=150n
+ CJO=700f  M=0.333 N=2.41 TT=72.0n )


*SRC=BAW101V;BAW101V;Diodes;Si;  325V  0.250A  50.0ns   DIODES Switching Diode
.MODEL BAW101V D  ( IS=74.8n RS=0.288 BV=325 IBV=150n
+ CJO=700f  M=0.333 N=2.41 TT=72.0n )


*SRC=MMBD5004A/C/S; 400V  0.3A  50.0ns   Diodes Inc. High Voltage Switching Diode

D1  1 = A  2 = C  DI_MMBD5004ACS
.MODEL DI_MMBD5004ACS D
+ IS = 10n
+ N = 2.02
+ BV = 400
+ IBV = 1.00u
+ RS = 0.7
+ CJO = 0.6p
+ VJ = 60m
+ M = 35m
+ FC = 0.5
+ TT = 50n


*SRC=BAV5004LP; 400V  0.3A  50.0ns   Diodes Inc. High Voltage Switching Diode

D1  1 = A  2 = C  DI_BAV5004LP
.MODEL DI_BAV5004LP D
+ IS = 10n
+ N = 2.15
+ BV = 400
+ IBV = 1.00u
+ RS = 0.6
+ CJO = 0.90p
+ VJ = 55m
+ M = 28m
+ FC = 0.5
+ TT = 50n


*SRC=1SS361UDJ; 80V  0.3A  4.0ns   Diodes Inc. Switching Diode

D1  1 = A  2 = C  DI_1SS361UDJ
.MODEL DI_1SS361UDJ D
+ IS = 2.0n
+ N = 1.83
+ BV = 80
+ IBV = 1.00u
+ RS = 0.7
+ CJO = 0.71p
+ VJ = 5m
+ M = 9m
+ FC = 0.5
+ TT = 4n


*SRC=1N4148W;1N4148W;Diodes;Si;  75.0V  0.300A  4.00ns   Diodes Inc. 
.MODEL 1N4148W D  ( IS=10.4n RS=51.5m BV=75.0 IBV=1.00u
+ CJO=2.00p  M=0.333 N=2.07 TT=5.76n )


*SRC=BAV99DW;DI_BAV99DW;Diodes;Si;  75.0V  0.300A  4.00ns   Diodes Inc. Switching Diode, Quad, Model for one element
.MODEL DI_BAV99DW D  ( IS=412p RS=0.140 BV=75.0 IBV=2.50u
+ CJO=2.00p  M=0.333 N=1.70 TT=5.76n )


*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*DATE=2/07/2015
*VERSION=1
*
.MODEL DLLFSD01LP3 D(IS=30p RS=.6 N=1 BV=105 IBV=0.36m IKF=1u 
+ EG=1.1 ISR=.8n CJO=.5p VJ=0.4 M=0.48 TRS1=0.0001 TT=2n)


*                (c)  2015 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*SRC=BAS116;DI_BAS116;Diodes;Si;  60.0V  0.215A  3.00us   Diodes Inc.
Switching Diode
.MODEL DI_BAS116 D  ( IS=4.53u RS=0.383 BV=60.0 IBV=5.00n
+ CJO=1.72p  M=0.333 N=4.07 TT=4.32u )


*SRC=BAS116T;DI_BAS116T;Diodes;Si;  85.0V  0.215A  3.00us   Diodes Inc. Switching Diode
.MODEL DI_BAS116T D  ( IS=10.5p RS=0.196 BV=85.0 IBV=5.00n
+ CJO=2.00p  M=0.333 N=1.61 TT=4.32u )



*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=13/11/2013
*VERSION=1


.model BAS116LP3  D(IS=4f RS=0.1 CJO=2.37p M=0.4 VJ=0.6 ISR=.005n N=1.05 IKF=1m
+ BV=85 IBV=100u TT=40n EG=1.14 TRS1=.1m)



*                (c)  2013 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*SRC=BAS116UDJ; 400V  0.3A  50.0ns   Diodes Inc. Switching Diode

D1  1 = A  2 = C  DI_BAS116UDJ
.MODEL DI_BAS116UDJ D
+ IS = 1.1p
+ N = 1.42
+ BV = 400
+ IBV = 1.00u
+ RS = 0.350
+ CJO = 1.95p
+ VJ = 60m
+ M = 173m
+ FC = 0.5
+ TT = 50n


*SRC=1N4448HLP;DI_1N4448HLP;Diodes;Si;  80.0V  0.250A  4.00ns   Diodes Inc. Switching Diode
.MODEL DI_1N4448HLP D  ( IS=5.31n RS=0.761 BV=80.0 IBV=100n
+ CJO=3.56p  M=0.333 N=1.90 TT=5.76n )


*SRC=DMN55D0UT;DI_DMN55D0UT;MOSFETs N;Enh;50.0V 0.160A 4.00ohms Diodes Inc MOSFET
.MODEL DI_DMN55D0UT NMOS( LEVEL=1 VTO=1.00 KP=0.324 GAMMA=1.24
+ PHI=.75 LAMBDA=133u RD=0.560 RS=0.560
+ IS=80.0f PB=0.800 MJ=0.460 CBD=9.60p 
+ CBS=11.5p CGSO=25.2n CGDO=21.0n CGBO=204n )
* -- Assumes default L=100U W=100U --
*SRC=BC857BV;DI_BC857BV;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs
.MODEL DI_BC857BV PNP (IS=10.2f NF=1.00 BF=650 VAF=121
+ IKF=42.5m ISE=2.25p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.105 RE=0.715 RB=2.86 RC=0.286
+ XTB=1.5 CJE=37.6p VJE=1.10 MJE=0.500 CJC=12.1p VJC=0.300
+ MJC=0.300 TF=499p TR=95.9n EG=1.12 )=499p TR=95.9n EG=1.12 )


*SRC=DMN55D0UT;DI_DMN55D0UT;MOSFETs N;Enh;50.0V 0.160A 4.00ohms Diodes Inc MOSFET
.MODEL DI_DMN55D0UT NMOS( LEVEL=1 VTO=1.00 KP=0.324 GAMMA=1.24
+ PHI=.75 LAMBDA=133u RD=0.560 RS=0.560
+ IS=80.0f PB=0.800 MJ=0.460 CBD=9.60p 
+ CBS=11.5p CGSO=25.2n CGDO=21.0n CGBO=204n )
* -- Assumes default L=100U W=100U --
*SRC=BC847BVC;DI_BC847BVC;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes, Inc. transistor
.MODEL DI_BC847BVC NPN (IS=3.75f NF=1.00 BF=1.61k VAF=121
+ IKF=8.79m ISE=8.38p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306
+ XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300
+ MJC=0.300 TF=520p TR=78.9n EG=1.12 )


*ZETEX BSP75N Spice Model v1.0 Last revision 22/02/07
    *
    .SUBCKT BSP75 1 2 3
    *------connections-------D-G-S
    *
    M1 31 4 33 33 Mmod1
    M2 4 4 43 3 Mmod2 M=25
    M3 41 37 38 38 Mmod3
    M4 16 18 17 3 Mmod2 M=200
    M5 15 16 17 3 Mmod2 M=200
    M6 14 15 3 3 Mmod2 M=400
    R1 2 4 20E3
    R2 41 31 0.01
    R3 3 33 0.25
    R4 1 3 10E6
    R5 37 3 20E3
    R6 2 13 15E3
    R7 2 12 1.7E3
    R8 12 10 30E3
    R9 12 11 28E3
    R10 11 3 2300
    R11 13 16 35E3
    R12 13 15 35E3
    R13 17 3 2.5E3
    R14 4 14 300
    R15 18 45 50E3
    C1 4 33 200E-12
    C2 4 1 60E-12
    C3 35 33 200E-12
    S1 43 3 41 42 Smod1
    S2 4 35 31 4 Smod2
    S3 34 35 31 4 Smod3
    E1 42 3 2 3 0.22
    E2 34 33 4 33 1
    E3 18 19 11 10 100
    D1 5 2 Dmod1
    D2 5 3 Dmod1
    D3 38 4 Dmod3
    D4 3 12 Dmod4
    D5 3 13 Dmod5
    D6 10 3 Dmod6
    D7 37 41 Dmod7
    D8 3 1 Dmod8
    D9 3 45 Dmod2
    *
    *
    *Distributed Thermal Model - minimum copper Rth=208 and infin;C/W
    *To enable thermal feedback change *G1 to G1
    V1 1 41 0
    *G1 3 20 VALUE = {ABS( I(V1) * V(1,3) ) }
    R21 20 21 0.07
    R22 21 22 0.17
    R23 22 23 0.37
    R24 23 24 1.34
    R25 24 25 2.80
    R26 25 26 11.19
    R27 26 27 48.10
    R28 27 28 78.30
    R29 28 29 65.99
    C21 20 21 7.45E-5
    C22 21 22 2.98E-4
    C23 22 23 8.94E-4
    C24 23 24 2.23E-3
    C25 24 25 1.97E-2
    C26 25 26 3.58E-2
    C27 26 27 5.61E-2
    C28 27 28 4.47E-1
    C29 28 29 1.36
    V2 29 3 25
    E4 19 3 22 29 0.201
    *Junction temperature node 20 at 1V=1 and infin;C
    *Ambient temperature set V2 at 1V=1 and infin;C
    *
    *
    .MODEL Mmod1 NMOS (LEVEL=1 VTO=1.95 IS=1E-15 KP=2.2)
    .MODEL Mmod2 NMOS (LEVEL=1 VTO=2.5 CGDO=5E-7 CGSO=5E-7)
    .MODEL Mmod3 NMOS (LEVEL=1 VTO=1.95 IS=1E-15 KP=0.002 RS=150 CGDO=5E-7 CGSO=5E-7)
    .MODEL Dmod1 D (RS=11 BV=11)
    .MODEL Dmod2 D (RS=1 BV=5 CJO=10p)
    .MODEL Dmod3 D (RS=10 BV=12)
    .MODEL Dmod4 D (RS=10 BV=4)
    .MODEL Dmod5 D (RS=10 BV=7)
    .MODEL Dmod6 D (IS=1E-14 RS=10 BV=12)
    .MODEL Dmod7 D (RS=1 BV=65)
    .MODEL Dmod8 D (IS=6E-13 RS=.13 N=1.01 BV=82 CJO=200E-12)
    .MODEL Smod1 VSWITCH RON=700 ROFF=1E6  VON=0.5 VOFF=-1.5
    .MODEL Smod2 VSWITCH RON=1 ROFF=1E6  VON=-0.5 VOFF=0.5
    .MODEL Smod3 VSWITCH RON=1 ROFF=1E6  VON=0.5 VOFF=-0.5
    .ENDS
    *
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=27/11/09
*VERSION=2
*PIN_ORDER         D G S
*
.SUBCKT ZXMS6001N3 1 2 3
M1 31 4 33 33 Mmod1
M2 4 4 43 3 Mmod2 M=25
M3 41 37 38 38 Mmod3
M4 16 45 17 3 Mmod2 M=200
M5 15 16 17 3 Mmod2 M=200
M6 14 15 3 3 Mmod2 M=400
R1 2 4 20E3
R2 41 31 0.01
R3 3 33 0.25
R4 1 3 10E6
R5 37 3 20E3
R6 2 13 15E3
R7 2 3 26E3
R8 12 10 30E3
R9 12 11 28E3
R10 11 3 2.3E3
R11 13 16 35E3
R12 13 15 35E3
R13 17 3 2.5E3
R14 4 14 300
R15 18 45 50E3
R16 44 12 1.2E3
C1 4 33 400E-12
C2 4 1 75E-12
C3 35 36 400E-12
C4 16 3 200E-12
S1 43 3 41 42 Smod1
S2 4 35 31 4 Smod2
S3 34 35 31 4 Smod3
E1 42 3 2 3 0.22
E2 34 33 4 33 1
E3 18 19 11 10 100
E4 44 3 2 3 1
E6 36 3 31 4 1
D1 5 2 Dmod1
D2 5 3 Dmod1
D3 38 4 Dmod3
D4 3 12 Dmod4
D5 3 13 Dmod5
D6 10 3 Dmod6
D7 37 41 Dmod7
D8 3 1 Dmod8
D9 3 45 Dmod2
V1 1 41 0
*
*Distributed Thermal Model for device mounted on minimum copper Rth=208°C/W
*To enable thermal feedback for transient analysis only change **G1 to G1
*Transient junction temperature may be observed at node 100 where 1V=1°C
*
**G1 3 20 VALUE =  {ABS( I(V1) * V(1,3) ) }
R21 20 21 0.07
R22 21 22 0.17
R23 22 23 0.37
R24 23 24 1.34
R25 24 25 2.80
R26 25 26 11.19
R27 26 27 48.10
R28 27 28 78.30
R29 28 29 65.99
C21 20 21 7.45E-5
C22 21 22 2.98E-4
C23 22 23 8.94E-4
C24 23 24 2.23E-3
C25 24 25 1.97E-2
C26 25 26 3.58E-2
C27 26 27 5.61E-2
C28 27 28 4.47E-1
C29 28 29 1.36
V2 29 3 25
E5 19 3 22 29 0.201
*Junction temperature at node 20 is 1V/°C
*Ambient temperature set V2 at 1V per 1°C
*
*
.MODEL Mmod1 NMOS (LEVEL=1 VTO=1.95 IS=1E-15 KP=2.2 )
.MODEL Mmod2 NMOS (LEVEL=1 VTO=2.5)
.MODEL Mmod3 NMOS (LEVEL=1 VTO=1.95 IS=1E-15 KP=0.002 RS=150)
.MODEL Dmod1 D (RS=11 BV=11)
.MODEL Dmod2 D (RS=1 BV=5 CJO=10p)
.MODEL Dmod3 D (RS=10 BV=12)
.MODEL Dmod4 D (RS=10 BV=4)
.MODEL Dmod5 D (RS=10 BV=7)
.MODEL Dmod6 D (IS=1E-14 RS=10 BV=12)
.MODEL Dmod7 D (RS=1 BV=65)
.MODEL Dmod8 D (IS=6E-13 RS=.13 N=1.01 BV=82 CJO=200E-12)
.MODEL Smod1 VSWITCH RON=6000 ROFF=1E6  VON=0.5 VOFF=-1.5
.MODEL Smod2 VSWITCH RON=1 ROFF=1E6  VON=-0.5 VOFF=0.5
.MODEL Smod3 VSWITCH RON=1 ROFF=1E6  VON=0.5 VOFF=-0.5
.ENDS
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=08/12/2009
*VERSION=2
*PIN_ORDER         D G S
*
.SUBCKT ZXMS6004FF 1 2 3
M1 31 40 33 33 Mmod1
M2 4 4 21 3 Mmod2 M=40
M3 41 37 38 38 Mmod3
M6 14 51 3 3 Mmod2 M=400
R1 2 4 60E3
R2 41 31 0.01
R3 3 33 0.35
R4 41 3 10E6
R5 37 3 20E3
R7 2 12 600
R8 12 10 50E3
R10 50 3 1000
R11 12 52 98E3
R12 3 52 2E3
R13 51 52 120E3
R14 4 14 500
R15 110 111 Rmod1 1
C1 4 33 200E-12
C2 4 31 50E-12
C3 35 31 200E-12
C4 52 3 50E-12
S1 21 3 41 22 Smod1
S2 4 35 31 4 Smod2
S3 34 35 31 4 Smod3
E1 22 3 2 3 0.22
E2 34 33 4 33 1
E3 19 3 103 109 4E-3
E4 19 50 value={V(10)-V(52)-0.50}
E5 51 3 value={V(12)*((TANH(V(50)*100)+1)/2)}
E6 4 40 100 3 4.2e-3
E7 109 3 value={(V(110)*1000)+27}
D1 5 2 Dmod1
D2 5 3 Dmod1
D3 38 4 Dmod3
D4 3 12 Dmod4
D5 13 3 Dmod6
D6 10 13 Dmod6
D7 37 41 Dmod7
D8 3 41 Dmod8
V1 1 41 0
V2 3 111 1
I1 3 110 1
*
* Distributed Thermal Model 15mm x 15mm x 1.6mm FR4 1oz Cu
* To enable thermal feedback for transient analysis only change **G1 to G1
* Transient junction temperature may be observed at node 100 where 1V=1°C
*
**G1 3 100 value={ABS( I(V1) * V(1,3) ) }
R21 100 101 0.23
R22 101 102 0.275
R23 102 103 1.265
R24 103 104 2.875
R25 104 105 10.925
R26 105 106 28.175
R27 106 107 29.67
R28 107 108 11.73
R29 108 109 67.85
C21 100 101 2.17E-5
C22 101 102 1.09E-4
C23 102 103 2.37E-4
C24 103 104 6.61E-4
C25 104 105 2.563E-3
C26 105 106 6.744E-3
C27 106 107 2.7974E-2
C28 107 108 0.8525
C29 108 109 0.8843
*
.MODEL Mmod1 NMOS (LEVEL=1 VTO=1.35 IS=1E-15 KP=10)
.MODEL Mmod2 NMOS (LEVEL=1 VTO=2.7 )
.MODEL Mmod3 NMOS (LEVEL=1 VTO=1.95 IS=1E-15 KP=0.001 RS=10)
.MODEL Dmod1 D (RS=11 BV=11)
.MODEL Dmod2 D (RS=1 BV=5 CJO=10p)
.MODEL Dmod3 D (RS=10 BV=12)
.MODEL Dmod4 D (RS=10 BV=6)
.MODEL Dmod5 D (RS=10 BV=7)
.MODEL Dmod6 D (IS=1E-14 RS=10 BV=12)
.MODEL Dmod7 D (RS=1 BV=65)
.MODEL Dmod8 D (IS=1E-13 RS=0.05 N=1.005 BV=90 CJO=212E-12 M=0.5 VJ=0.75)
.MODEL Smod1 VSWITCH RON=100 ROFF=1E6  VON=0.5 VOFF=0
.MODEL Smod2 VSWITCH RON=1 ROFF=1E6  VON=-0.5 VOFF=0.5
.MODEL Smod3 VSWITCH RON=1 ROFF=1E6  VON=0.5 VOFF=-0.5
.MODEL Rmod1 RES (TC1=1e-3)
.ENDS
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=12/11/2009
*VERSION=1
*PIN_ORDER         D G S
*
.SUBCKT BSP75G 1 2 3
M1 31 4 33 33 Mmod1
M2 4 4 43 3 Mmod2 M=25
M3 41 37 38 38 Mmod3
M4 16 18 17 3 Mmod2 M=200
M5 15 16 17 3 Mmod2 M=200
M6 14 15 3 3 Mmod2 M=400
R1 2 4 20E3
R2 41 31 0.01
R3 3 33 0.25
R4 1 3 10E6
R5 37 3 20E3
R6 2 13 15E3
R7 2 12 1.7E3
R8 12 10 30E3
R9 12 11 28E3
R10 11 3 2300
R11 13 16 35E3
R12 13 15 35E3
R13 17 3 2.5E3
R14 4 14 300
R15 18 45 50E3
C1 4 33 200E-12
C2 4 1 60E-12
C3 35 33 200E-12
S1 43 3 41 42 Smod1
S2 4 35 31 4 Smod2
S3 34 35 31 4 Smod3
E1 42 3 2 3 0.22
E2 34 33 4 33 1
E3 18 19 11 10 100
D1 5 2 Dmod1
D2 5 3 Dmod1
D3 38 4 Dmod3
D4 3 12 Dmod4
D5 3 13 Dmod5
D6 10 3 Dmod6
D7 37 41 Dmod7
D8 3 1 Dmod8
D9 3 45 Dmod2
*
*Distributed Thermal Model for device mounted on minimum copper Rth=208°C/W
*To enable thermal feedback for transient analysis change **G1 to G1
V1 1 41 0
**G1 3 20 VALUE = {ABS( I(V1) * V(1,3) ) }
R21 20 21 0.07
R22 21 22 0.17
R23 22 23 0.37
R24 23 24 1.34
R25 24 25 2.80
R26 25 26 11.19
R27 26 27 48.10
R28 27 28 78.30
R29 28 29 65.99
C21 20 21 7.45E-5
C22 21 22 2.98E-4
C23 22 23 8.94E-4
C24 23 24 2.23E-3
C25 24 25 1.97E-2
C26 25 26 3.58E-2
C27 26 27 5.61E-2
C28 27 28 4.47E-1
C29 28 29 1.36
V2 29 3 25
E4 19 3 22 29 0.201
*Junction temperature at node 20 is 1V/°C
*Ambient temperature set V2 at 1V per 1°C
*
.MODEL Mmod1 NMOS (LEVEL=1 VTO=1.95 IS=1E-15 KP=2.2)
.MODEL Mmod2 NMOS (LEVEL=1 VTO=2.5 CGDO=5E-7 CGSO=5E-7)
.MODEL Mmod3 NMOS (LEVEL=1 VTO=1.95 IS=1E-15 KP=0.002 RS=150
+ CGDO=5E-7 CGSO=5E-7)
.MODEL Dmod1 D (RS=11 BV=11)
.MODEL Dmod2 D (RS=1 BV=5 CJO=10p)
.MODEL Dmod3 D (RS=10 BV=12)
.MODEL Dmod4 D (RS=10 BV=4)
.MODEL Dmod5 D (RS=10 BV=7)
.MODEL Dmod6 D (IS=1E-14 RS=10 BV=12)
.MODEL Dmod7 D (RS=1 BV=65)
.MODEL Dmod8 D (IS=6E-13 RS=.13 N=1.01 BV=82 CJO=200E-12)
.MODEL Smod1 VSWITCH RON=3.9E3 ROFF=1E6  VON=0.5 VOFF=-1.5
.MODEL Smod2 VSWITCH RON=1 ROFF=1E6  VON=-0.5 VOFF=0.5
.MODEL Smod3 VSWITCH RON=1 ROFF=1E6  VON=0.5 VOFF=-0.5
.ENDS
*
*$


*ZETEX ZXM61N03F Spice Model v1.0 Last Revised 23/1/03
    *
    .SUBCKT ZXM61N03F 3 4 5
    *----connections----D-G-S
    *
    M1 6 2 8 8 MOSMOD
    M2 6 2 8 8 MOSMODS
    RG 4 2 6
    RIN 2 8 200E6
    RD 3 6 RDSMOD 0.15
    RS 8 5 RDSMOD 0.024
    RL 3 5 35E6
    C1 2 8 135E-12
    C2 2 3 17E-12 
    C3 15 14 175E-12
    C4 16 8 183E-12
    D1 5 3 DMOD1
    S1 2 15 14 13 SMOD1a
    S2 13 15 14 13 SMOD1b
    S3 16 13 13 8 SMOD2a
    S4 16 2 13 8 SMOD2b
    Egs2 13 8 2 8 1
    Eds1 14 8 3 8 1
    .MODEL MOSMOD NMOS VTO=2.2 IS=1E-15 KP=2.5 CBD=85E-12 LAMBDA=4.9E-3
    .MODEL MOSMODS NMOS VTO=1.8 IS=1E-15 KP=0.02
    .MODEL DMOD1 D IS=1E-13 RS=0.15 BV=38 IBV=1E-6 TT=9e-9
    .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4  VON=-1.5 VOFF=1.5
    .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4  VON=1.5 VOFF=-1.5
    .MODEL SMOD2a VSWITCH RON=1e2 ROFF=1e4  VON=-1.5 VOFF=-3.5
    .MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4  VON=-3.5 VOFF=-1.5
    .MODEL RDSMOD RES (TC1=3E-3 TC2=2E-5)
    .ENDS  ZXM61N03F
    *
    *$
    *


*ZETEX ZXM62N03G Spice Model v1.0 Last Revised 24/1/03
    *
    .SUBCKT ZXM62N03G 3 4 5
    *----connections----D-G-S
    *
    M1 6 2 8 8 MOSMOD
    M2 6 2 8 8 MOSMODS
    RG 4 2 5
    RIN 2 8 200E6
    RD 3 6 RDSMOD 0.051
    RS 8 5 RDSMOD 0.0093
    RL 3 5 35E6
    C1 2 8 349E-12
    C2 2 3 43E-12 
    C3 15 14 453E-12
    C4 16 8 474E-12
    D1 5 3 DMOD1
    S1 2 15 14 13 SMOD1a
    S2 13 15 14 13 SMOD1b
    S3 16 13 13 8 SMOD2a
    S4 16 2 13 8 SMOD2b
    Egs2 13 8 2 8 1
    Eds1 14 8 3 8 1
    .MODEL MOSMOD NMOS VTO=2.2 IS=1E-15 KP=6.5 CBD=221E-12 LAMBDA=4.9E-3
    .MODEL MOSMODS NMOS VTO=1.8 IS=1E-15 KP=0.04
    .MODEL DMOD1 D IS=2.6E-13 RS=0.058 BV=38 IBV=1E-6 TT=21e-9
    .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4  VON=-1.5 VOFF=1.5
    .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4  VON=1.5 VOFF=-1.5
    .MODEL SMOD2a VSWITCH RON=1e2 ROFF=1e4  VON=-1.5 VOFF=-3.5
    .MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4  VON=-3.5 VOFF=-1.5
    .MODEL RDSMOD RES (TC1=3E-3 TC2=2E-5)
    .ENDS  ZXM62N03G
    *
    *$
    *


*ZETEX ZXMD63N03X Spice Model v1.1 Last Revised 23/1/03
    *
    .SUBCKT ZXMD63N03X 3 4 5
    *----connections----D-G-S
    *
    M1 6 2 8 8 MOSMOD
    M2 6 2 8 8 MOSMODS
    RG 4 2 5
    RIN 2 8 200E6
    RD 3 6 RDSMOD 0.065
    RS 8 5 RDSMOD 0.012
    RL 3 5 35E6
    C1 2 8 269E-12
    C2 2 3 33E-12 
    C3 15 14 349E-12
    C4 16 8 365E-12
    D1 5 3 DMOD1
    S1 2 15 14 13 SMOD1a
    S2 13 15 14 13 SMOD1b
    S3 16 13 13 8 SMOD2a
    S4 16 2 13 8 SMOD2b
    Egs2 13 8 2 8 1
    Eds1 14 8 3 8 1
    .MODEL MOSMOD NMOS VTO=2.2 IS=1E-15 KP=5 CBD=170E-12 LAMBDA=4.9E-3
    .MODEL MOSMODS NMOS VTO=1.8 IS=1E-15 KP=0.033
    .MODEL DMOD1 D IS=2E-13 RS=0.075 BV=38 IBV=1E-6 TT=21e-9
    .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4  VON=-1.5 VOFF=1.5
    .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4  VON=1.5 VOFF=-1.5
    .MODEL SMOD2a VSWITCH RON=1e2 ROFF=1e4  VON=-1.5 VOFF=-3.5
    .MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4  VON=-3.5 VOFF=-1.5
    .MODEL RDSMOD RES (TC1=3E-3 TC2=2E-5)
    .ENDS  ZXMD63N03X
    *
    *$
    *


*ZETEX ZXMN3A01F Spice Model v2.0 Last Revised 22/2/05
    *
    .SUBCKT ZXMN3A01F 30 40 50
    *------connections-------D-G-S
    M1 6 2 5 5 Nmod L=1.16E-6 W=0.28
    M2 5 2 5 6 Pmod L=1.3E-6 W=0.13
    RG 4 2 5
    RIN 2 5 1E12
    RD 3 6 Rdmod 0.08
    RL 3 5 3E9
    C1 2 5 8.5E-12
    C2 3 4 3E-12
    D1 5 3  Dbodymod
    LD 3 30 0.5E-9
    LG 4 40 1.0E-9
    LS 5 50 1.0E-9
    .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=5E17 VTO=2.3
    +KP=15E-5 RS=.045 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10)
    .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1.5E16
    +TPG=-1 IS=1E-15 N=10)
    .MODEL Dbodymod D (IS=6E-13 RS=.025 IKF=0.1 TRS1=1.5e-3
    +CJO=85e-12  BV=33)
    .MODEL Rdmod RES (TC1=4.2e-3 TC2=1E-5)
    .ENDS ZXMN3A01F
    *
    *$
    *


*ZETEX ZXMN3A02X8 Spice Model v2.0 Last Revised 22/2/05
    *
    *
    .SUBCKT ZXMN3A02X8 30 40 50
    *----connections----D-G-S
    M1 6 2 7 7 Nmod
    M2 7 2 7 6 Pmod
    RG 4 2 3
    RIN 2 5 1E12
    RD 3 6 Rdmod 0.001
    RS 7 5 Rdmod 0.018
    RL 3 5 3E9
    C1 2 5 8.5E-12
    C2 3 2 3E-12
    D1 5 3  Dbodymod
    LD 3 30 1.5E-9
    LG 4 40 1.0E-9
    LS 5 50 1.0E-9
    .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E17 L=1.16E-6 W=2.3  VTO=2
    +KP=5E-5 NFS=2E11 KAPPA=0.1 UO=650 IS=1E-15 N=10)
    .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1.5E16 L=1.3E-6 W=1.3  
    +TPG=-1 IS=1E-15 N=10)
    .MODEL Dbodymod D (IS=4E-12 RS=.014 IKF=3.6 TRS1=1.5e-3
    +CJO=1070e-12  BV=33)
    .MODEL Rdmod RES (TC1=4e-3 TC2=1E-5)
    .ENDS
    *
    *$
    *


*ZETEX ZXMN3A03E6 Spice Model v2.0 Last revision 15/03/07
    *
    .SUBCKT ZXMN3A03E6 30 40 50
    *------connections-------D-G-S
    M1 6 20 5 5 Nmod 
    M2 5 20 5 6 Pmod 
    RG 4 2 1
    RIN 2 5 1E12
    RD 3 6 Rmod1 0.04
    RL 3 5 1E8
    C1 2 5 2E-11
    C2 3 4 1E-12
    D1 5 3  Dbodymod
    Egt1 2 20 21 5 1.0
    Vgt1 5 22 1.0
    Igt1 5 21 1.0
    Rgt 21 22 Rmod2 1.8
    LD 3 30 0.3E-9
    LG 4 40 1.9E-9
    LS 5 50 1.9E-9
    .MODEL Nmod NMOS (LEVEL=3 L=0.7E-6 W=0.77 TOX=60E-9 NSUB=2.58E16 UO=1022)
    +VTO=1.2 KP=65E-6 GAMMA=1.61 PHI=0.74 RS=0.035 KAPPA=0.03 NFS=2.0E12 RD=0.03)
    .MODEL Pmod PMOS (LEVEL=3 L=1.2E-6 W=1.0 TOX=64E-9 NSUB=2.58E16 UO=396)
    .MODEL Dbodymod D (IS=1.5E-10 N=1.13 RS=0.06 IKF=0.3 XTI=0.1 TRS1=6E-3 
    +TIKF=6E-2 CJO=1E-12)
    .MODEL Rmod1 RES (TC1=1E-5 TC2=1E-6)
    .MODEL Rmod2 RES (TC1=4E-4 TC2=1E-6)
    .ENDS ZXMN3A03E6
    *
    *$
    *


*ZETEX ZXMN3A04DN8 Spice Model v2.0 Last Revised 15/03/07
    *
    .SUBCKT ZXMN3A04DN8 30 40 50
    *------connections-------D-G-S
    M1 6 20 5 5 Nmod 
    M2 5 20 5 6 Pmod 
    RG 4 2 1.0
    RIN 2 5 1E12
    RD 3 6 Rmod1 0.01
    RL 3 5 1E8
    C1 2 5 6.2E-10
    C2 3 4 1.5E-10
    D1 5 3  Dbodymod
    Egt1 2 20 21 5 1.0
    Vgt1 5 22 1.0
    Igt1 5 21 1.0
    Rgt 21 22 Rmod2 2.3
    LD 3 30 1.5E-9
    LG 4 40 1.2E-9
    LS 5 50 1.2E-9
    .MODEL Nmod NMOS (LEVEL=3 L=0.7E-6 W=2.183 TOX=64E-9 NSUB=3.07E16 
    +UO=389 RS=0.02 XJ=1.6e-6)
    .MODEL Pmod PMOS (LEVEL=3 L=1.2E-6 W=2.183 TOX=64E-9 NSUB=1.07E16 
    +UO=429  TPG=-1)
    .MODEL Dbodymod D (IS=6E-10 N=1.2 RS=0.03 IKF=1 TIKF=2 TRS1=4E-4 
    +XTI=0.1)
    .MODEL Rmod1 RES (TC1=1E-4 TC2=1E-6)
    .MODEL Rmod2 RES (TC1=-3E-4 TC2=-5E-6)
    .ENDS ZXMN3A04DN8
    *
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=25/02/2009
*VERSION=1
*PIN_ORDER         D G S
*
.SUBCKT ZXMN3A04K 1 2 3
M11 20 21 22 22 Nnmod1 L=0.7E-6 W=2.183
M12 22 21 22 20 Pnmod1 L=1.2E-6 W=2.183
RG1 26 27 1.1
RIN1 21 22 1E12
RD1 20 24 Rnmod1 0.01
RS1 22 23 1E-6
RL1 23 24 1E8
C11 21 22 11E-10
C12 20 21 1E-12
D1 23 24  Dnmod1
Egt1 26 21 30 22 1
Vgt1 22 31 1
Igt1 22 30 1
Rgt1 30 31 Rnmod2 2.3
LD1 1 24 1.3E-9
LG1 2 27 2.4E-9
LS1 3 23 2.4E-9
.MODEL Nnmod1 NMOS (LEVEL=3 TOX=64E-9 NSUB=3.07E16 UO=389 RS=0.02 XJ=1.6e-6)
.MODEL Pnmod1 PMOS (LEVEL=3 TOX=64E-9 NSUB=1.07E16 UO=429  TPG=-1)
.MODEL Dnmod1 D (IS=6E-10 N=1.2 RS=0.03 IKF=1 TIKF=2 TRS1=4E-4 XTI=0.1)
.MODEL Rnmod1 RES (TC1=10.7E-3 TC2=-4E-5)
.MODEL Rnmod2 RES (TC1=-2.6E-3 TC2=-5E-6)
.ENDS
*
*$


*ZETEX ZXMN3A06DN8 Spice Model v2.0 Last revision 15/3/07
    *
    .SUBCKT ZXMN3A06DN8 30 40 50
    *------connections-------D-G-S
    M1 6 2 5 5 Nmod L=1.16E-6 W=1.5
    M2 5 2 5 6 Pmod L=1.3E-6 W=0.65
    RG 4 2 2.5
    RIN 2 5 1E12
    RD 3 6 Rmod 0.012
    RS 5 55 Rmod 0.012
    RL 3 5 3E12
    C1 2 5 300E-12
    C2 3 4 3E-12
    D1 5 3  Dbodymod
    LD 3 30 1.5E-9
    LG 4 40 1.2E-9
    LS 55 50 1.2E-9
    .MODEL Nmod NMOS (LEVEL=3 TOX=7.5E-8 NSUB=5E16 VTO= 1.5
    +KP=1.25E-5 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10)
    .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1.5E16
    +TPG=-1 IS=1E-15 N=10)
    .MODEL Dbodymod D (IS=8E-12 RS=.025 IKF=0.1 TRS1=1.5e-3
    +CJO=158e-12  BV=33 TT=16e-9)
    .MODEL Rmod RES (TC1=2.8e-3 TC2=0.8E-5)
    .ENDS ZXMN3A06DN8
    *
    *$
    *


*ZETEX ZXMN3A14F Spice Model v1.0 Last revision 31/5/06
    *
    .SUBCKT ZXMN3A14F 30 40 50
    *------connections-------D-G-S
    M1 6 2 5 5 Nmod L=1.16E-6 W=0.76
    M2 5 2 5 6 Pmod L=1.3E-6 W=0.35
    RG 4 2 4.5
    RIN 2 5 1E12
    RD 3 6 Rmod 0.04
    RS 5 55 Rmod 0.015 
    RL 3 5 3E9
    C1 2 5 8.5E-12
    C2 3 4 3E-12
    D1 5 3  Dbodymod
    LD 3 30 0.5E-9
    LG 4 40 1.0E-9
    LS 55 50 1.0E-9
    .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=5E16 VTO=2.13
    +KP=2.5E-5 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10)
    .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1.5E16
    +TPG=-1 IS=1E-15 N=10)
    .MODEL Dbodymod D (IS=6E-13 RS=.025 IKF=0.1 TRS1=1.5e-3
    +CJO=150e-12  BV=33 TT=12e-9)
    .MODEL Rmod RES (TC1=2.8e-3 TC2=0.8E-5)
    .ENDS ZXMN3A14F
    *
    *$
    *


*ZETEX ZXMN3B04N8 Spice Model v2.0 Last Revised 15/3/07
    *
    .SUBCKT ZXMN3B04N8 30 40 50
    *------connections-------D-G-S
    M1 6 2 5 5 Nmod L=1.16E-6 W=2.9
    M2 5 2 5 6 Pmod L=1.3E-6 W=1.6
    RG 4 2 1
    RIN 2 5 1E12
    RD 3 6 Rdmod 0.01
    RL 3 5 3E9
    C1 2 5 8.5E-12
    C2 3 4 3E-12
    D1 5 3  Dbodymod
    LD 3 30 1.3E-9
    LG 4 40 1.2E-9
    LS 5 50 1.2E-9
    .MODEL Nmod NMOS (LEVEL=3 TOX=3.7E-8 NSUB=3E17 VTO=1.32
    +KP=15E-5 RS=.008 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10)
    .MODEL Pmod PMOS (LEVEL=3 TOX=5E-8 NSUB=1.5E16
    +TPG=-1 IS=1E-15 N=10)
    .MODEL Dbodymod D (IS=1E-11 RS=.01 IKF=.5 TRS1=3e-3
    +CJO=85e-12  BV=33)
    .MODEL Rdmod RES (TC1=5.2e-3 TC2=1E-5)
    .ENDS ZXMN3B04N8
    *
    *$
    *


*---------- DMN3007LSS Spice Model ----------
.SUBCKT DMN3007LSS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.004231 
RS 30 3 0.001 
RG 20 2 0.7 
CGS 2 3 2.344E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 3.1E-009 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8.75E+005  ETA = 0.01118  VTO = 2.29 
+ TOX = 6E-008  NSUB = 7.825E+016  KP = 86.95  KAPPA = 256.4  U0 = 170.2 
.MODEL DCGD D  CJO = 2.253E-009  VJ = 0.3475  M = 0.4648 
.MODEL DSUB D  IS = 2.301E-010  N = 1.194  RS = 0.002878  BV = 35  CJO = 6.368E-010  VJ = 0.6415  M = 0.7534 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN3007LSS Spice Model v1.1 Last Revised 2011/3/2


*SRC=DMN3010LSS;DI_DMN3010LSS;MOSFETs N;Enh;30.0V 16.0A 9.00mohms  Diodes Inc MOSFET
*SYM=POWMOSN
.SUBCKT DI_DMN3010LSS   10 20 30
*     TERMINALS:  D  G  S
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  3.27m
RS  40  3  1.22m
RG  20  2  9.37
CGS  2  3  1.68n
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  2.23n
R1  13  0  1.00
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1.00
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.50n
.MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m
+ ETA=2.00m VTO=2.00 KP=41.4
.MODEL DCGD D (CJO=2.23n VJ=0.600 M=0.680
.MODEL DSUB D (IS=66.4n N=1.50 RS=28.1m BV=30.0
+ CJO=485p VJ=0.800 M=0.420 TT=324n
.MODEL DLIM D (IS=100U)
.ENDS


*---------- DMN3033LDM Spice Model ----------
.SUBCKT DMN3033LDM 10 20 30 
* TERMINALS: D G S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.005805 
RS 30 3 0.001 
RG 20 2 1.32 
CGS 2 3 6.922E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 9.2E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.0143 VTO = 2.028 
+ TOX = 6E-008 NSUB = 1E+017 KP = 21.95 KAPPA = 105 U0 = 200 
.MODEL DCGD D CJO = 4.611E-010 VJ = 0.3568 M = 0.4267 
.MODEL DSUB D IS = 2.567E-010 N = 1.254 RS = 0.01257 BV = 35 CJO = 8.267E-011 VJ = 0.4558 M = 0.5515 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMN3033LDM Spice Model V2.0 Last Revised 2013/12/10


*SRC=DMN3033LSN;DI_DMN3033LSN;MOSFETs N;Enh;30.0V 6.00A 30.0mohms  DIODES INC MOSFET
.MODEL DI_DMN3033LSN  NMOS( LEVEL=1 VTO=2.10 KP=3.12u  GAMMA=2.60
+ PHI=.75  LAMBDA=56.2u RD=4.20m RS=4.20m
+ IS=3.00p  PB=0.800 MJ=0.460 CBD=92.7p 
+ CBS=111p  CGSO=1.30u CGDO=1.08u CGBO=5.17u  )
*   -- Assumes default L=100U W=100U --


*SRC=DMN3051LDM;DI_DMN3051LDM;MOSFETs N;Enh;30.0V 4.00A 38.0mohms   
*SYM=POWMOSN
.SUBCKT DI_DMN3051LDM   10 20 30
*     TERMINALS:  D  G  S
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  17.0m
RS  40  3  1.95m
RG  20  2  47.0
CGS  2  3  343p
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  370p
R1  13  0  1.00
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1.00
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.50n
.MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m
+ ETA=2.00m VTO=2.20 KP=16.9
.MODEL DCGD D (CJO=370p VJ=0.600 M=0.680
.MODEL DSUB D (IS=16.6n N=1.50 RS=0.102 BV=30.0
+ CJO=132p VJ=0.800 M=0.420 TT=214n
.MODEL DLIM D (IS=100U)
.ENDS


*SRC=DMN3115UDM;DI_DMN3115UDM;MOSFETs N;Enh;30.0V 3.20A 60.0mohms  Diodes Inc MOSFET
.MODEL DI_DMN3115UDM  NMOS( LEVEL=1 VTO=1.00 KP=10.7  GAMMA=1.24
+ PHI=.75  LAMBDA=50.9u RD=8.40m RS=8.40m
+ IS=1.60p  PB=0.800 MJ=0.460 CBD=76.2p 
+ CBS=91.4p  CGSO=648n CGDO=540n CGBO=3.57u  )
*   -- Assumes default L=100U W=100U --


*SRC=DMN3150L;DI_DMN3150L;MOSFETs N;Enh;28.0V 3.10A 85.0mohms  DIODES INC MOSFET
.MODEL DI_DMN3150L  NMOS( LEVEL=1 VTO=1.40 KP=2.90u  GAMMA=1.74
+ PHI=.75  LAMBDA=145u RD=11.9m RS=11.9m
+ IS=1.55p  PB=0.800 MJ=0.460 CBD=64.7p 
+ CBS=77.6p  CGSO=576n CGDO=480n CGBO=1.99u  )
*   -- Assumes default L=100U W=100U --


*SRC=DMN3200U;DI_DMN3200U;MOSFETs N;Enh;30.0V 2.20A 90.0mohms  Diodes Inc MOSFET
.MODEL DI_DMN3200U  NMOS( LEVEL=1 VTO=1.00 KP=11.4  GAMMA=1.24
+ PHI=.75  LAMBDA=139u RD=12.6m RS=12.6m
+ IS=1.10p  PB=0.800 MJ=0.460 CBD=103p 
+ CBS=123p  CGSO=420n CGDO=350n CGBO=2.13u  )
*   -- Assumes default L=100U W=100U --


*SRC=DMN32D2LDF;DI_DMN32D2LDF;MOSFETs N;Enh;30.0V 0.400A 1.20ohms  Diodes Inc MOSFET
.MODEL DI_DMN32D2LDF  NMOS( LEVEL=1 VTO=1.20 KP=0.100  GAMMA=1.49
+ PHI=.75  LAMBDA=555u RD=0.168 RS=0.168
+ IS=200f  PB=0.800 MJ=0.460 CBD=13.1p 
+ CBS=15.7p  CGSO=43.2n CGDO=36.0n CGBO=311n  )
*   -- Assumes default L=100U W=100U --


*---------- DMN32D2LFB4 Spice Model ----------
.SUBCKT DMN32D2LFB4 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.5483 
RS 30 3 0.001 
RG 20 2 74.82 
CGS 2 3 3.5E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2E-014 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9734 
+ TOX = 6E-008 NSUB = 1E+016 KP = 3.524 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.449E-011 VJ = 0.7996 M = 0.6 
.MODEL DSUB D IS = 7.105E-010 N = 1.311 RS = 0.8388 BV = 30 CJO = 1E-015 VJ = 0.6 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN32D2LFB4 Spice Model v1.0 Last Revised 2015/10/20


*SRC=DMN32D2LV;???;MOSFETs N;Enh;30.0V 0.400A 1.20ohms  Diodes, Inc. 
.MODEL ???  NMOS( LEVEL=1 VTO=-1.20 KP=0.100  GAMMA=1.49
+ PHI=.75  LAMBDA=556u RD=0.168 RS=0.168
+ IS=200f  PB=0.800 MJ=0.460 CBD=13.1p 
+ CBS=15.7p  CGSO=43.2n CGDO=36.0n CGBO=1.37u  )
*   -- Assumes default L=100U W=100U --


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=02NOV2010
*VERSION=2
*
.SUBCKT DMN3300U 10 20 30 
* TERMINALS: D G S 
M1 10 20 30 30 DMOS L=100U W=100U
.MODEL DMOS NMOS( LEVEL=1 VTO=1.00 KP=10.4 GAMMA=1.24 
+ PHI=.75 LAMBDA=127u RD=21.0m RS=21.0m 
+ IS=1.00p PB=0.800 MJ=0.460 CBD=39.7p 
+ CBS=47.7p CGSO=276n CGDO=230n CGBO=1.42u )
.ENDS
*
*$


*SRC=DMN4800LSS;DI_DMN4800LSS;MOSFETs N;Enh;30.0V 10.0A 14.0mohms  Diodes Inc MOSFET
*SYM=POWMOSN
.SUBCKT DI_DMN4800LSS   10 20 30
*     TERMINALS:  D  G  S
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  5.65m
RS  40  3  1.35m
RG  20  2  15.0
CGS  2  3  775p
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  162p
R1  13  0  1.00
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1.00
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.50n
.MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m
+ ETA=1.40m VTO=1.60 KP=13.8
.MODEL DCGD D (CJO=162p VJ=0.600 M=0.680
.MODEL DSUB D (IS=41.5n N=1.50 RS=19.0m BV=30.0
+ CJO=313p VJ=0.800 M=0.420 TT=253n
.MODEL DLIM D (IS=100U)
.ENDS


*SRC=DMN4468LSS;DI_DMN4468LSS;MOSFETs N;Enh;30.0V 8.70A 14.0mohms  Diodes Inc MOSFET
*SYM=POWMOSN
.SUBCKT DI_DMN4468LSS   10 20 30
*     TERMINALS:  D  G  S
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  5.65m
RS  40  3  1.35m
RG  20  2  20.0
CGS  2  3  852p
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  108p
R1  13  0  1.00
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1.00
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.50n
.MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m
+ ETA=1.61m VTO=1.95 KP=10.7
.MODEL DCGD D (CJO=108p VJ=0.600 M=0.680
.MODEL DSUB D (IS=36.1n N=1.50 RS=21.8m BV=30.0
+ CJO=208p VJ=0.800 M=0.420 TT=253n
.MODEL DLIM D (IS=100U)
.ENDS


*DIODES_INC_SPICE_MODEL DMN3404L 
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=22Jan2013
*VERSION=1.1



.SUBCKT DMN3404L   10 20 30
M1 1 2 3 3  Nmod1
RD 10 1 Rmod1 10E-3
RS 23 3 Rmod1 12E-3
RG 20 22 1.8
RIN 20 23 2E11
RDS 10 23 2E9
CGS 2 3 320E-12 
EGD 12 0 2 1 1
REGD 12 0 1
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 500E-12 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 23 10 DSUB
EL 2 22 1 3 .003
RL 30 23 3
LS  30 23 2E-9
.MODEL Nmod1 NMOS (LEVEL=3 VTO=2 TOX=6.4E-8 NSUB=5E+16 KP=33 NFS=1E11 IS=1E-15 N=10)
.MODEL DCGD D (CJO = 162E-12  VJ = 0.45  M = 0.33)
.MODEL DSUB D (IS=2.5E-13 N=1 RS=0.018 BV=33 CJO=50E-12 VJ=0.45 M=0.33 TT=3E-9)
.MODEL DLIM D (IS=100U N=1)
.MODEL Rmod1 RES (TC1=.5e-3 TC2=3E-6)
.ENDS


*                (c)  2013 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=210JUL2010
*VERSION=1
*------connections-------P1=G1, P2=S1, P3=G2, P4=S2, P5=P6=D2, P7=P8=D1
*
.SUBCKT DMN3024LSD  P1 P2 P3 P4 P5 P6 P7 P8
*Device1
M11 106 103 108 108 Nmod
R12 P2 102 2
R11 104 106 Rmod1 0.015
R13 108 105 Rmod1 0.005
R15 104 105 100E6
R16 102 105 100E6
D11 105 104 Dmod1
I11 108 121 1
V11 122 121 1
R17 122 108 Rmod2 1
E11 102 103 121 108 1
E12 113 108 102 108 1
E13 114 108 104 108 1
C11 102 108 549E-12
C12 102 104 129E-12
C13 115 114 390E-12 
C14 116 108 400E-12
S11 102 115 114 113 SMOD1
S12 113 115 114 113 SMOD2
S13 116 113 113 108 SMOD3
S14 116 102 113 108 SMOD4
L11 P7 104 1E-9
L12 P1 105 1E-9
R18 P7 P8 0.001


*Device2
M21 206 203 208 208 Nmod
R22 P4 202 2
R21 204 206 Rmod1 0.015
R23 208 205 Rmod1 0.005
R25 204 205 100E6
R26 202 205 100E6
D21 205 204 Dmod1
I21 208 221 1
V21 222 221 1
R27 222 208 Rmod2 1
E21 202 203 221 208 1
E22 213 208 202 208 1
E23 214 208 204 208 1
C21 202 208 549E-12
C22 202 204 129E-12
C23 215 214 390E-12 
C24 216 208 400E-12
S21 202 215 214 213 SMOD1
S22 213 215 214 213 SMOD2
S23 216 213 213 208 SMOD3
S24 216 202 213 208 SMOD4
L21 P5 204 1E-9
L22 P3 205 1E-9
R28 P5 P6 0.001
*
.MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=-0.5 VOFF=0.5
.MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=0.5 VOFF=-0.5
.MODEL SMOD3 VSWITCH RON=.001 ROFF=100  VON=-2 VOFF=-3
.MODEL SMOD4 VSWITCH RON=.001 ROFF=100  VON=-3 VOFF=-2
.MODEL Nmod NMOS (LEVEL=3  VTO=2.5 KP=35  NFS=1.33E12 KAPPA=500 TOX=30E-9  NSUB=1E16 IS=1E-15 N=10)
.MODEL Dmod1 D (IS=8.7E-14 RS=0.019 CJO=400E-12 VJ=0.6 M=0.55 TT=1e-9 TRS1=1e-4  BV=33)
.MODEL Rmod1 RES (TC1=4.3e-3 TC2=0.6E-5)
.MODEL Rmod2 RES (TC1=-4.5e-3 TC2=-6E-6)
.ENDS DMN3024LSD
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=21JUL2010
*VERSION=1
*------connections-------D-G-S
*
.SUBCKT DMN3024LSS 3 4 5
M1 6 20 8 8 Nmod
RG 4 2 2
RD 3 6 Rmod1 0.015
RS 8 5 Rmod1 0.005
RL 3 5 100E6
D1 5 3 Dmod1
I1 8 21 1
V1 22 21 1
RT 22 8 Rmod2 1
Et 2 20 21 8 1
Egs2 13 8 2 8 1
Eds1 14 8 3 8 1
C1 2 8 549E-12
C2 2 3  129E-12
C3 15 14 390E-12 
C4 16 8 400E-12
S1 2 15 14 13 SMOD1
S2 13 15 14 13 SMOD2
S3 16 13 13 8 SMOD3
S4 16 2 13 8 SMOD4
.MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=-0.5 VOFF=0.5
.MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=0.5 VOFF=-0.5
.MODEL SMOD3 VSWITCH RON=.001 ROFF=100  VON=-2 VOFF=-3
.MODEL SMOD4 VSWITCH RON=.001 ROFF=100  VON=-3 VOFF=-2
.MODEL Nmod NMOS (LEVEL=3  VTO=2.5 KP=35  NFS=1.33E12 KAPPA=500 TOX=30E-9  NSUB=1E16 IS=1E-15 N=10)
.MODEL Dmod1 D (IS=8.7E-14 RS=0.019 CJO=400E-12 VJ=0.6 M=0.55 TT=1e-9 TRS1=1e-4  BV=33)
.MODEL Rmod1 RES (TC1=4.3e-3 TC2=0.6E-5)
.MODEL Rmod2 RES (TC1=-4.5e-3 TC2=-6E-6)
.ENDS DMN3024LSS
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=21JUL2010
*VERSION=1
*------connections-------D-G-S
*
.SUBCKT DMN3024LK3 3 4 5
M1 6 20 8 8 Nmod
RG 4 2 2
RD 3 6 Rmod1 0.015
RS 8 5 Rmod1 0.005
RL 3 5 100E6
D1 5 3 Dmod1
I1 8 21 1
V1 22 21 1
RT 22 8 Rmod2 1
Et 2 20 21 8 1
Egs2 13 8 2 8 1
Eds1 14 8 3 8 1
C1 2 8 549E-12
C2 2 3  129E-12
C3 15 14 390E-12 
C4 16 8 400E-12
S1 2 15 14 13 SMOD1
S2 13 15 14 13 SMOD2
S3 16 13 13 8 SMOD3
S4 16 2 13 8 SMOD4
.MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=-0.5 VOFF=0.5
.MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=0.5 VOFF=-0.5
.MODEL SMOD3 VSWITCH RON=.001 ROFF=100  VON=-2 VOFF=-3
.MODEL SMOD4 VSWITCH RON=.001 ROFF=100  VON=-3 VOFF=-2
.MODEL Nmod NMOS (LEVEL=3  VTO=2.5 KP=35  NFS=1.33E12 KAPPA=500 TOX=30E-9  NSUB=1E16 IS=1E-15 N=10)
.MODEL Dmod1 D (IS=8.7E-14 RS=0.019 CJO=400E-12 VJ=0.6 M=0.55 TT=1e-9 TRS1=1e-4  BV=33)
.MODEL Rmod1 RES (TC1=4.3e-3 TC2=0.6E-5)
.MODEL Rmod2 RES (TC1=-4.5e-3 TC2=-6E-6)
.ENDS DMN3024LK3
*
*$


*SYM=POWMOSN
.SUBCKT DMG4800LSD   D=10 G=20 S=30
*     TERMINALS:  D  G  S
M1   1  20  3  3  NMOS L=0.6U W=2.304672
RD  10  1  2m
RS  30  3  4m
CGS  20  3  692p
EGD 12  0  20  1  1
VFB 14  0  0
FFB  20  1  VFB  1
CGD 13 14  488p
R1  13  0  1.00
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1.00
D2  15  0  DLIM
DSD  3 10  DSUB
.MODEL NMOS NMOS LEVEL=3 U0=400 VMAX=40k
+ ETA=0.1m VTO=1.62 TOX=60n NSUB=2.16e16
.MODEL DCGD D CJO=488p VJ=450m M=0.420
.MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=30
+ CJO=48p VJ=0.950 M=0.920
.MODEL DLIM D IS=100U
.ENDS


*---------- DMG4468LK3 Spice Model ----------
.SUBCKT DMG4468LK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.009266 
RS 30 3 0.001002 
RG 20 2 1.37 
CGS 2 3 7.889E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 7E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0.0001  VTO = 2.046 
+ TOX = 6.045E-008  NSUB = 1E+017  KP = 28.97  KAPPA = 71.64  U0 = 400 
.MODEL DCGD D  CJO = 4.839E-010  VJ = 0.213  M = 0.3746 
.MODEL DSUB D  IS = 3.11E-010  N = 1.297  RS = 0.00732  BV = 35  CJO = 6.786E-011  VJ = 0.4257  M = 0.5551 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMG4468LK3 Spice Model v1.0 Last Revised 2010/10/6


*---------- DMG4800LK3 Spice Model ----------
.SUBCKT DMG4800LK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.00609 
RS 30 3 0.001002 
RG 20 2 1.37 
CGS 2 3 6.734E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 7E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8E+005  ETA = 0.0001  VTO = 1.515 
+ TOX = 6.045E-008  NSUB = 3.203E+015  KP = 26.14  KAPPA = 26.53  U0 = 400 
.MODEL DCGD D  CJO = 5.334E-010  VJ = 0.3477  M = 0.4238 
.MODEL DSUB D  IS = 2.647E-009  N = 1.306  RS = 0.01224  BV = 35  CJO = 5.333E-011  VJ = 0.6305  M = 0.8 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMG4800LK3 Spice Model v1.0 Last Revised 2010/10/6


*---------- DMG4468LFG Spice Model ----------
.SUBCKT DMG4468LFG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.009103 
RS 30 3 0.001002 
RG 20 2 1.37 
CGS 2 3 7.889E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 7E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0.003725  VTO = 2.01 
+ TOX = 6E-008  NSUB = 1E+017  KP = 50.8  KAPPA = 110.3  U0 = 400 
.MODEL DCGD D  CJO = 4.839E-010  VJ = 0.213  M = 0.3746 
.MODEL DSUB D  IS = 2.251E-010  N = 1.221  RS = 0.005011  BV = 35  CJO = 7.248E-011  VJ = 0.3928  M = 0.5931 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMG4468LFG Spice Model v1.0 Last Revised 2010/10/19


*---------- DMG4800LFG Spice Model ----------
.SUBCKT DMG4800LFG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.00633 
RS 30 3 0.001002 
RG 20 2 1.37 
CGS 2 3 6.734E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 7E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8E+005  ETA = 0.0001  VTO = 1.616 
+ TOX = 6.045E-008  NSUB = 9.967E+015  KP = 31.63  KAPPA = 28.61  U0 = 400 
.MODEL DCGD D  CJO = 5.334E-010  VJ = 0.3477  M = 0.4238 
.MODEL DSUB D  IS = 2.647E-009  N = 1.349  RS = 0.006635  BV = 35  CJO = 5.245E-011  VJ = 0.6712  M = 0.8243 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMG4800LFG Spice Model v1.0 Last Revised 2010/10/6


*---------- DMG4496SSS Spice Model ----------
.SUBCKT DMG4496SSS    10 20 30
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.01007 
RS 30 3 0.001 
RG 20 2 2.86 
CGS 2 3 4.495E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 4.55E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0.01276  VTO = 2.136 
+ TOX = 6E-008  NSUB = 4.86E+016  KP = 25.62  KAPPA = 7.551  U0=400
.MODEL DCGD D  CJO = 1.88E-010  VJ = 0.1151  M = 0.2705 
.MODEL DSUB D  IS = 1E-009  N = 1.345  RS = 0.004398  BV = 35  CJO = 2.225E-010  VJ = 0.6  M = 0.4775 
.MODEL DLIM D  IS = 1E-005 
.ENDS
*Diodes DMG4496SSS Spice Model v1.0 Last Revised 2010/6/24


*---------- DMG4466SSS Spice Model ----------
.SUBCKT DMG4466SSS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.01149 
RS 30 3 0.001002 
RG 20 2 1.13 
CGS 2 3 4.216E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 4.55E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8.276E+005  ETA = 0.02587  VTO = 2.098 
+ TOX = 6.045E-008  NSUB = 1.406E+017  KP = 34.37  KAPPA = 1E-015  U0 = 4.441E-010 
.MODEL DCGD D  CJO = 2.453E-010  VJ = 0.1563  M = 0.3026 
.MODEL DSUB D  IS = 1.188E-009  N = 1.345  RS = 0.004578 
+ BV = 35  CJO = 1.739E-010  VJ = 0.4139  M = 0.4368 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMG4466SSS Spice Model v1.1 Last Revised 2011/1/8


*---------- DMG4466SSSL Spice Model ----------
.SUBCKT DMG4466SSSL 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.01149 
RS 30 3 0.001002 
RG 20 2 1.13 
CGS 2 3 4.216E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 4.55E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8.276E+005  ETA = 0.02587  VTO = 2.098 
+ TOX = 6.045E-008  NSUB = 1.406E+017  KP = 34.37  KAPPA = 1E-015  U0 = 4.441E-010 
.MODEL DCGD D  CJO = 2.453E-010  VJ = 0.1563  M = 0.3026 
.MODEL DSUB D  IS = 1.188E-009  N = 1.345  RS = 0.004578 
+ BV = 35  CJO = 1.739E-010  VJ = 0.4139  M = 0.4368 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMG4466SSSL Spice Model v1.1 Last Revised 2011/1/18


*---------- DMN3730UFB4 Spice Model ----------
.SUBCKT DMN3730UFB4 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.254 
RS 30 3 0.001 
RG 20 2 64.1 
CGS 2 3 6.303E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.3E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8482 
+ TOX = 6E-008 NSUB = 1E+016 KP = 6.297 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 2.864E-011 VJ = 0.6391 M = 0.6 
.MODEL DSUB D IS = 1.379E-008 N = 1.49 RS = 0.3453 BV = 34 CJO = 7E-012 VJ = 0.6 M = 0.7813 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN3730UFB4 Spice Model v1.0M Last Revised 2016/5/17



*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=24JAN2011
*VERSION=1
*PIN_ORDER         
*1=S1
*2=G1
*3=S2
*4=G2
*5=D2
*6=D2
*7=D1
*8=D1
*
.SUBCKT ZXMN3AMC 1 2 3 4 5 6 7 8
*Dev1 N-channel
M11 11 12 13 13 Nmod1 L=1.16E-6 W=0.28
M12 13 12 13 11 Pmod1 L=1.3E-6 W=0.13
RG11 2 12 5
RIN11 12 13 1E12
RD11 11 15 Rdmod1 0.08
RS11 13 14 1E-6
RL11 13 15 3E9
C11 12 13 8.5E-12
C12 12 15 3E-12
D11 13 15  Dmod1
RP11 15 7 1E-6
RP12 15 8 1E-6
LS11 14 1 11.2E-9
*Dev2 N-channel
M21 21 22 23 23 Nmod1 L=1.16E-6 W=0.28
M22 23 22 23 21 Pmod1 L=1.3E-6 W=0.13
RG21 4 22 5
RIN21 22 23 1E12
RD21 21 25 Rdmod1 0.08
RS21 23 24 1E-6
RL21 23 25 3E9
C21 22 23 8.5E-12
C22 22 25 3E-12
D21 23 25  Dmod1
RP21 25 5 1E-6
RP22 25 6 1E-6
LS21 24 3 11.2E-9
.MODEL Nmod1 NMOS (LEVEL=3 TOX=5.5E-8 NSUB=5E17 VTO=2.3
+KP=15E-5 RS=.045 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10)
.MODEL Pmod1 PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1.5E16
+TPG=-1 IS=1E-15 N=10)
.MODEL Dmod1 D (IS=6E-13 RS=.025 IKF=0.1 TRS1=1.5e-3
+CJO=85e-12  BV=33)
.MODEL Rdmod1 RES (TC1=4.2e-3 TC2=1E-5)
.ENDS
*
*$


*DIODES_INC_SPICE_MODEL DMN3730U N-channel MOSFET
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=1DEC2011
*VERSION=1

.SUBCKT DMN3730 10 20 30
M1 1 2 3 3  Nmod1
RD 10 1 Rmod1 400E-3
RS 23 3 Rmod1 10E-3
RG 20 22 70
RIN 20 23 2E11
RDS 10 23 6E9
CGS 2 3 120E-12 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 90E-12 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 23 10  DSUB
EL 2 22 1 3 0.0015
LS  30 23  1n
.MODEL Nmod1 NMOS (LEVEL=3 VTO=.87 TOX=5.8E-8 NSUB=1E+17 KP=11.5 NFS=.5E+10 IS=1E-15 N=10)
.MODEL DCGD D (CJO =30E-12  VJ = 0.5  M = 0.43)
.MODEL DSUB D (IS = 1E-13 N=1.19 RS=0.06 BV=35 CJO=330E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=2E-3)
.MODEL DLIM D (IS=100U N=1)
.MODEL Rmod1 RES (TC1=6e-3 TC2=12E-6)
.ENDS
.SIMULATOR DEFAULT


*---------- DMG4822SSD Spice Model ----------
.SUBCKT DMG4822SSD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.01149 
RS 30 3 0.001002 
RG 20 2 1.13 
CGS 2 3 4.216E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 4.55E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8.276E+005  ETA = 0.02587  VTO = 2.098 
+ TOX = 6.045E-008  NSUB = 1.406E+017  KP = 34.37  KAPPA = 1E-015  U0 = 4.441E-010 
.MODEL DCGD D  CJO = 2.453E-010  VJ = 0.1563  M = 0.3026 
.MODEL DSUB D  IS = 1.188E-009  N = 1.345  RS = 0.004578 
+ BV = 35  CJO = 1.739E-010  VJ = 0.4139  M = 0.4368 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMG4822SSD Spice Model v1.0 Last Revised 2011/6/27


*---------- DMN3029LFG Spice Model ----------
.SUBCKT DMN3029LFG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.006868 
RS 30 3 0.001 
RG 20 2 1.92 
CGS 2 3 5.089E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 4.8E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+005  ETA = 0.001  VTO = 2.23 
+ TOX = 6E-008  NSUB = 1E+016  KP = 33.14  U0 = 400  KAPPA = 0.001011 
.MODEL DCGD D  CJO = 2.68E-010  VJ = 0.204  M = 0.3131 
.MODEL DSUB D  IS = 1.168E-010  N = 1.244  RS = 0.00323  BV = 35  CJO = 1.898E-010  VJ = 0.2902  M = 0.4412 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN3029LFG Spice Model v1.0 Last Revised 2011/8/16


*---------- DMN3110S Spice Model ----------
.SUBCKT DMN3110S 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.01593 
RS 30 3 0.001 
RG 20 2 1.4 
CGS 2 3 2.711E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 5.2E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 5.378E+005  ETA = 0.001  VTO = 2.227 
+ TOX = 6E-008  NSUB = 1E+016  KP = 9.816  U0 = 400  KAPPA = 10 
.MODEL DCGD D  CJO = 2.317E-010  VJ = 0.2783  M = 0.4405 
.MODEL DSUB D  IS = 1E-015  N = 0.8731  RS = 0.04482  BV = 35  CJO = 1.086E-011  VJ = 0.4101  M = 0.9 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN3110S Spice Model v1.0 Last Revised 2011/8/15


*---------- DMG7410SFG Spice Model ----------
.SUBCKT DMG7410SFG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.006868 
RS 30 3 0.001 
RG 20 2 1.92 
CGS 2 3 5.089E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 4.8E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+005  ETA = 0.001  VTO = 2.23 
+ TOX = 6E-008  NSUB = 1E+016  KP = 33.14  U0 = 400  KAPPA = 0.001011 
.MODEL DCGD D  CJO = 2.68E-010  VJ = 0.204  M = 0.3131 
.MODEL DSUB D  IS = 1.168E-010  N = 1.244  RS = 0.00323  BV = 35  CJO = 1.898E-010  VJ = 0.2902  M = 0.4412 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMG7410SFG Spice Model v1.0 Last Revised 2011/8/16


*---------- DMG7430LFG Spice Model ----------
.SUBCKT DMG7430LFG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.007058 
RS 30 3 0.001 
RG 20 2 2.94 
CGS 2 3 1.348E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.222 
+ TOX = 6E-008 NSUB = 1E+016 KP = 121.1 U0 = 400 KAPPA = 1E-015 
.MODEL DCGD D CJO = 3.779E-010 VJ = 0.6 M = 0.4637 
.MODEL DSUB D IS = 2.322E-010 N = 1.242 RS = 0.002024 
+ BV = 45 CJO = 1.63E-010 VJ = 0.7 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMG7430LFG  Spice Model v1.0 Last Revised 2014/3/14



*---------- DMN3018SSS Spice Model ----------
.SUBCKT DMN3018SSS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01061 
RS 30 3 0.001 
RG 20 2 1.47 
CGS 2 3 1.924E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1E-013 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.267 
+ TOX = 6E-008 NSUB = 1E+016 KP = 33.03 U0 = 400 KAPPA = 1E-015 
.MODEL DCGD D CJO = 7.297E-010 VJ = 0.6 M = 0.5206
.MODEL DSUB D IS = 1.439E-013 N = 0.9284 RS = 0.01772 
+ BV = 20 CJO = 4.24E-010 VJ = 0.65 M = 0.8 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN3018SSS Spice Model v1.0 Last Revised 2014/7/24


*---------- DMN63D8LV Spice Model ----------
.SUBCKT DMN63D8LV 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 1.906 
RS 30 3 0.001 
RG 20 2 62 
CGS 2 3 2.111E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 5.5E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 5.378E+005  ETA = 0.001  VTO = 1.592 
+ TOX = 6E-008  NSUB = 1E+016  KP = 0.5626  U0 = 400  KAPPA = 10 
.MODEL DCGD D  CJO = 1.249E-011  VJ = 0.7186  M = 0.6 
.MODEL DSUB D  IS = 1.685E-012  N = 1.251  RS = 0.2452  BV = 65  CJO = 6.828E-012  VJ = 0.6  M = 0.6 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN63D8LV Spice Model v1.0 Last Revised 2014/10/15


*---------- DMN3900UFA Spice Model ----------
.SUBCKT DMN3900UFA 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.3262 
RS 30 3 0.001 
RG 20 2 467 
DESD1 2 5 DESD 
DESD2 3 5 DESD 
CGS 2 3 4.031E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 0.9767 
+ TOX = 6E-008 NSUB = 1E+016 KP = 3.291 U0 = 400 KAPPA = 8.238 
.MODEL DCGD D CJO = 2.804E-011 VJ = 0.04193 M = 0.3358 
.MODEL DSUB D IS = 4.551E-009 N = 1.836 RS = 0.1357 
+ CJO = 3.048E-012 VJ = 0.1 M = 0.1882 
.MODEL DLIM D IS = 0.0001 
.MODEL DESD D IS = 7.551E-009 N = 22.09 BV = 2.453 
.ENDS
*Diodes DMN3900UFA Spice Model v2.0 Last Revised 2014/2/18


*---------- DMN3025LFG Spice Model ----------

.SUBCKT DMN3025LFG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01437 
RS 30 3 0.001 
RG 20 2 1.84 
CGS 2 3 4.55E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 4.1E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 2.222 
+ TOX = 6E-008 NSUB = 1E+017 KP = 35.61 KAPPA = 1E-015 U0 = 400 
.MODEL DCGD D CJO = 2.222E-010 VJ = 0.2975 M = 0.3378 
.MODEL DSUB D IS = 2.278E-010 N = 1.242 RS = 0.007361 
+ BV = 35 CJO = 4.795E-011 VJ = 0.3436 M = 0.5232 
.MODEL DLIM D IS = 0.0001 
.ENDS


*Diodes DMN3025LFG Spice Model v1.0 Last Revised 2013/4/17


*---------- DMN63D8LDW Spice Model ----------
.SUBCKT DMN63D8LDW 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 1.906 
RS 30 3 0.001 
RG 20 2 62 
CGS 2 3 2.111E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 5.5E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 5.378E+005  ETA = 0.001  VTO = 1.592 
+ TOX = 6E-008  NSUB = 1E+016  KP = 0.5626  U0 = 400  KAPPA = 10 
.MODEL DCGD D  CJO = 1.249E-011  VJ = 0.7186  M = 0.6 
.MODEL DSUB D  IS = 1.685E-012  N = 1.251  RS = 0.2452  BV = 65  CJO = 6.828E-012  VJ = 0.6  M = 0.6 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN63D8LDW Spice Model v1.0 Last Revised 2014/10/15


*---------- DMN3010LFG Spice Model ----------
.SUBCKT DMN3010LFG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.0045 
RS 30 3 0.001 
RG 20 2 2.36 
CGS 2 3 1.952E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.4E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.358 
+ TOX = 6E-008 NSUB = 1E+016 KP = 129.3 U0 = 400 KAPPA = 4.441E-014 
.MODEL DCGD D CJO = 7.076E-010 VJ = 0.6 M = 0.4965 
.MODEL DSUB D IS = 2.322E-010 N = 1.242 RS = 0.002024 
+ BV = 35 CJO = 2.865E-010 VJ = 2.446 M = 1.359 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN3010LFG  Spice Model v1.0 Last Revised 2014/3/14


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=21/03/2014
*VERSION=1

.SUBCKT DMN3190LDW 10 20 30
M1 1 2 3 3  Nmod1
RD 10 1 Rmod1 50E-3
RS 23 3 Rmod1 100E-3
RG 20 22 50
RIN 20 23 2E11
RDS 10 23 6E9
CGS 2 3 90E-12 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 84E-12 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 23 10  DSUB
EL 2 22 1 3 0.0015
LS  30 23  1n
.MODEL Nmod1 NMOS (LEVEL=3 VTO=2.5 TOX=7.3E-8 NSUB=6E+16 KP=7.5 NFS=2.8E+12 IS=.5E-15 N=10)
.MODEL DCGD D (CJO =26E-12  VJ = 0.5  M = 0.43)
.MODEL DSUB D (IS = 1E-13 N=1.0 RS=0.07 BV=35 CJO=100E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=2E-3)
.MODEL DLIM D (IS=100U N=1)
.MODEL Rmod1 RES (TC1=.1e-3 TC2=12E-6)
.ENDS
*                     (c)  2014 Diodes Inc
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*

.SIMULATOR DEFAULT

*                     (c)  2014 Diodes Inc
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*---------- DMN31D5UFZ Spice Model ----------
.SUBCKT DMN31D5UFZ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.7969 
RS 30 3 0.001 
RG 20 2 219 
CGS 2 3 2.124E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 6.5E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8E+005  ETA = 0  VTO = 0.7496 
+ TOX = 6E-008  NSUB = 1E+016  KP = 1.745  U0 = 400  KAPPA = 1 
.MODEL DCGD D  CJO = 1.072E-011  VJ = 0.111  M = 0.4766 
.MODEL DSUB D  IS = 8.906E-008  N = 1.859  RS = 0.9141  BV = 35  CJO = 1.64E-012  VJ = 0.1  M = 0.1 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN31D5UFZ Spice Model v1.0 Last Revised 2015/3/11


*---------- DMN3008SFG Spice Model ----------
.SUBCKT DMN3008SFG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001509 
RS 30 3 0.001 
RG 20 2 0.02 
CGS 2 3 3.299E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 4.5E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.645 
+ TOX = 6E-008 NSUB = 1E+016 KP = 135.4 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.825E-009 VJ = 0.7987 M = 0.6 
.MODEL DSUB D IS = 2.672E-010 N = 1.105 RS = 0.003471 BV = 35 CJO = 6.274E-010 VJ = 0.8 M = 0.6 TT=1E-08
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN3008SFG Spice Model v1.0M Last Revised 2016/5/3


*---------- DMT3008LFDF Spice Model ----------
.SUBCKT DMT3008LFDF 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001978 
RS 30 3 0.001 
RG 20 2 1.62 
CGS 2 3 9.083E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 4E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.922 
+ TOX = 6E-008 NSUB = 1E+016 KP = 41.04 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.931E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 4.761E-010 N = 1.236 RS = 0.002671 BV = 35 CJO = 8.829E-010 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT3008LFDF Spice Model v1.0M Last Revised 2016/6/14



*---------- DMN3027LFG Spice Model ----------
.SUBCKT DMN3027LFG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.006868 
RS 30 3 0.001 
RG 20 2 1.92 
CGS 2 3 5.089E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 4.8E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+005  ETA = 0.001  VTO = 2.23 
+ TOX = 6E-008  NSUB = 1E+016  KP = 33.14  U0 = 400  KAPPA = 0.001011 
.MODEL DCGD D  CJO = 2.68E-010  VJ = 0.204  M = 0.3131 
.MODEL DSUB D  IS = 1.168E-010  N = 1.244  RS = 0.00323  BV = 35  CJO = 1.898E-010  VJ = 0.2902  M = 0.4412 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN3027LFG Spice Model v1.0 Last Revised 2015/6/22


*---------- DMN63D8L Spice Model ----------
.SUBCKT DMN63D8L 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 1.906 
RS 30 3 0.001 
RG 20 2 62 
CGS 2 3 2.111E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 5.5E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 5.378E+005  ETA = 0.001  VTO = 1.592 
+ TOX = 6E-008  NSUB = 1E+016  KP = 0.5626  U0 = 400  KAPPA = 10 
.MODEL DCGD D  CJO = 1.249E-011  VJ = 0.7186  M = 0.6 
.MODEL DSUB D  IS = 1.685E-012  N = 1.251  RS = 0.2452  BV = 65  CJO = 6.828E-012  VJ = 0.6  M = 0.6 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN63D8L Spice Model v1.0 Last Revised 2015/7/3



*---------- DMN63D8LW Spice Model ----------
.SUBCKT DMN63D8LW 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 1.906 
RS 30 3 0.001 
RG 20 2 62 
CGS 2 3 2.111E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 5.5E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 5.378E+005  ETA = 0.001  VTO = 1.592 
+ TOX = 6E-008  NSUB = 1E+016  KP = 0.5626  U0 = 400  KAPPA = 10 
.MODEL DCGD D  CJO = 1.249E-011  VJ = 0.7186  M = 0.6 
.MODEL DSUB D  IS = 1.685E-012  N = 1.251  RS = 0.2452  BV = 65  CJO = 6.828E-012  VJ = 0.6  M = 0.6 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN63D8LW Spice Model v1.0 Last Revised 2015/7/3



*---------- DMT3009LDT Spice Model ----------
.SUBCKT DMT3009LDT 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.002503 
RS 30 3 0.001 
RG 20 2 1.04 
CGS 2 3 7.039E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5.5E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.879 
+ TOX = 6E-008 NSUB = 1E+016 KP = 40.58 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 3.446E-010 VJ = 0.8 M = 0.7188 
.MODEL DSUB D IS = 2.773E-010 N = 1.21 RS = 0.005245 BV = 30 CJO = 1.695E-009 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT3009LDT Spice Model v1.0 Last Revised 2015/9/7



*Q1

*---------- DMN3025LDT Spice Model ----------
.SUBCKT DMN3025LDT 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.004998 
RS 30 3 0.001 
RG 20 2 1.84 
CGS 2 3 4.764E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 4E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.946 
+ TOX = 6E-008 NSUB = 1E+016 KP = 16.89 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.977E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.313E-010 N = 1.242 RS = 0.008911 BV = 30 CJO = 2.221E-010 VJ = 0.6002 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Q2

*---------- DMT3009LDT Spice Model ----------
.SUBCKT DMT3009LDT 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.002503 
RS 30 3 0.001 
RG 20 2 1.04 
CGS 2 3 7.039E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5.5E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.879 
+ TOX = 6E-008 NSUB = 1E+016 KP = 40.58 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 3.446E-010 VJ = 0.8 M = 0.7188 
.MODEL DSUB D IS = 2.773E-010 N = 1.21 RS = 0.005245 BV = 30 CJO = 1.695E-009 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMN3025LDT Spice Model v1.0 Last Revised 2015/9/9


*---------- DMN3032LFDB Spice Model ----------
.SUBCKT DMN3032LFDB 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.004399 
RS 30 3 0.001 
RG 20 2 2.29 
CGS 2 3 4.23E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.525 
+ TOX = 6E-008 NSUB = 1E+016 KP = 17.07 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 3.11E-010 VJ = 0.335 M = 0.5084 
.MODEL DSUB D IS = 2.451E-010 N = 1.289 RS = 0.02026 BV = 30 CJO = 1E-015 VJ = 0.1 M = 0.2257 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN3032LFDB Spice Model v1.0 Last Revised 2015/9/23


*---------- DMN3015LSD Spice Model ----------
.SUBCKT DMN3015LSD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.007363 
RS 30 3 0.001 
RG 20 2 2.94 
CGS 2 3 1.344E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 9.9E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8E+005  ETA = 0.001  VTO = 2.213 
+ TOX = 6E-008  NSUB = 1E+016  KP = 176.5  U0 = 400  KAPPA = 4.441E-010 
.MODEL DCGD D  CJO = 4.27E-010  VJ = 0.7983  M = 0.6 
.MODEL DSUB D  IS = 8.592E-011  N = 1.184  RS = 0.003043  BV = 50  CJO = 3.379E-010  VJ = 0.6  M = 0.6 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN3015LSD  Spice Model v1.0 Last Revised 2015/6/16


*---------- DMN3032LFDBQ Spice Model ----------
.SUBCKT DMN3032LFDBQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.004399 
RS 30 3 0.001 
RG 20 2 2.29 
CGS 2 3 4.23E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.525 
+ TOX = 6E-008 NSUB = 1E+016 KP = 17.07 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 3.11E-010 VJ = 0.335 M = 0.5084 
.MODEL DSUB D IS = 2.451E-010 N = 1.289 RS = 0.02026 BV = 30 CJO = 1E-015 VJ = 0.1 M = 0.2257 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN3032LFDBQ Spice Model v1.0 Last Revised 2015/9/23


*---------- DMN3018SSD Spice Model ----------
.SUBCKT DMN3018SSD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01061 
RS 30 3 0.001 
RG 20 2 1.47 
CGS 2 3 1.924E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1E-013 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.267 
+ TOX = 6E-008 NSUB = 1E+016 KP = 33.03 U0 = 400 KAPPA = 1E-015 
.MODEL DCGD D CJO = 7.297E-010 VJ = 0.6 M = 0.5206
.MODEL DSUB D IS = 1.439E-013 N = 0.9284 RS = 0.01772 
+ BV = 20 CJO = 4.24E-010 VJ = 0.65 M = 0.8 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN3018SSD Spice Model v1.0 Last Revised 2015/1/30


*---------- DMTH3004LPS Spice Model ----------
.SUBCKT DMTH3004LPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001 
RS 30 3 0.001 
RG 20 2 1 
CGS 2 3 2.049E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.8E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.164 
+ TOX = 6E-008 NSUB = 1E+016 KP = 135.6 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 9.486E-010 VJ = 2.289 M = 0.7048 
.MODEL DSUB D IS = 2.321E-010 N = 1.181 RS = 0.0003474 BV = 30 CJO = 1.937E-009 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH3004LPS Spice Model v1.0 Last Revised 2015/11/10


*ZETEX ZXMN3A01E6 Spice Model v2.0 Last Revised 22/2/05
    *
    .SUBCKT ZXMN3A01E6 30 40 50
    *------connections-------D-G-S
    M1 6 2 5 5 Nmod L=1.16E-6 W=0.28
    M2 5 2 5 6 Pmod L=1.3E-6 W=0.13
    RG 4 2 5
    RIN 2 5 1E12
    RD 3 6 Rdmod 0.08
    RL 3 5 3E9
    C1 2 5 8.5E-12
    C2 3 4 3E-12
    D1 5 3  Dbodymod
    LD 3 30 0.3E-9
    LG 4 40 1.9E-9
    LS 5 50 1.9E-9
    .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=5E17 VTO=2.3
    +KP=15E-5 RS=.045 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10)
    .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1.5E16
    +TPG=-1 IS=1E-15 N=10)
    .MODEL Dbodymod D (IS=6E-13 RS=.025 IKF=0.1 TRS1=1.5e-3
    +CJO=85e-12  BV=33)
    .MODEL Rdmod RES (TC1=4.2e-3 TC2=1E-5)
    .ENDS ZXMN3A01E6
    *
    *$
    *


*ZETEX ZXMN3B14F Spice Model v1.0 Last revision 6/1/06
    *
    .SUBCKT ZXMN3B14F 30 40 50
    *------connections-------D-G-S
    M1 6 2 5 5 Nmod L=0.7E-6 W=1.3
    M2 5 2 5 6 Pmod L=1.3E-6 W=0.34
    RG 4 2 2.8
    RIN 2 5 1E12
    RD 3 6 Rdmod 0.03
    RL 3 5 3E9
    C1 2 5 8.5E-12
    C2 3 4 3E-12
    D1 5 3  Dbodymod
    LD 3 30 0.5E-9
    LG 4 40 1.0E-9
    LS 5 50 1.0E-9
    .MODEL Nmod NMOS (LEVEL=3 TOX=3.7E-8 NSUB=5E16 VTO=1.24
    +KP=1.5E-5 RS=.01 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10)
    .MODEL Pmod PMOS (LEVEL=3 TOX=3.7E-8 NSUB=2.58E16
    +TPG=-1 IS=1E-15 N=10)
    .MODEL Dbodymod D (IS=1E-11 RS=.025 IKF=.5 TRS1=3e-3 TT=1.2E-8
    +CJO=200e-12  BV=33)
    .MODEL Rdmod RES (TC1=4.9e-3 TC2=1E-5)
    .ENDS ZXMN3B14F
    *
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=210JUL2010
*VERSION=1
*------connections-------P1=G1, P2=S1, P3=G2, P4=S2, P5=P6=D2, P7=P8=D1
*
.SUBCKT ZXMN3F31DN8  P1 P2 P3 P4 P5 P6 P7 P8
*Device1
M11 106 103 108 108 Nmod
R12 P2 102 2
R11 104 106 Rmod1 0.015
R13 108 105 Rmod1 0.005
R15 104 105 100E6
R16 102 105 100E6
D11 105 104 Dmod1
I11 108 121 1
V11 122 121 1
R17 122 108 Rmod2 1
E11 102 103 121 108 1
E12 113 108 102 108 1
E13 114 108 104 108 1
C11 102 108 549E-12
C12 102 104 129E-12
C13 115 114 390E-12 
C14 116 108 400E-12
S11 102 115 114 113 SMOD1
S12 113 115 114 113 SMOD2
S13 116 113 113 108 SMOD3
S14 116 102 113 108 SMOD4
L11 P7 104 1E-9
L12 P1 105 1E-9
R18 P7 P8 0.001


*Device2
M21 206 203 208 208 Nmod
R22 P4 202 2
R21 204 206 Rmod1 0.015
R23 208 205 Rmod1 0.005
R25 204 205 100E6
R26 202 205 100E6
D21 205 204 Dmod1
I21 208 221 1
V21 222 221 1
R27 222 208 Rmod2 1
E21 202 203 221 208 1
E22 213 208 202 208 1
E23 214 208 204 208 1
C21 202 208 549E-12
C22 202 204 129E-12
C23 215 214 390E-12 
C24 216 208 400E-12
S21 202 215 214 213 SMOD1
S22 213 215 214 213 SMOD2
S23 216 213 213 208 SMOD3
S24 216 202 213 208 SMOD4
L21 P5 204 1E-9
L22 P3 205 1E-9
R28 P5 P6 0.001
*
.MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=-0.5 VOFF=0.5
.MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=0.5 VOFF=-0.5
.MODEL SMOD3 VSWITCH RON=.001 ROFF=100  VON=-2 VOFF=-3
.MODEL SMOD4 VSWITCH RON=.001 ROFF=100  VON=-3 VOFF=-2
.MODEL Nmod NMOS (LEVEL=3  VTO=2.5 KP=35  NFS=1.33E12 KAPPA=500 TOX=30E-9  NSUB=1E16 IS=1E-15 N=10)
.MODEL Dmod1 D (IS=8.7E-14 RS=0.019 CJO=400E-12 VJ=0.6 M=0.55 TT=1e-9 TRS1=1e-4  BV=33)
.MODEL Rmod1 RES (TC1=4.3e-3 TC2=0.6E-5)
.MODEL Rmod2 RES (TC1=-4.5e-3 TC2=-6E-6)
.ENDS ZXMN3F31DN8
*
*$


*---------- DMN3023L Spice Model ----------
.SUBCKT DMN3023L 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01447 
RS 30 3 0.001 
RG 20 2 12 
CGS 2 3 8.446E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 8.7E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.83 
+ TOX = 6E-008 NSUB = 1E+016 KP = 48.02 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 2.856E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.256E-010 N = 1.23 RS = 0.01103 BV = 30 CJO = 2.22E-010 VJ = 0.1 M = 0.2257 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN3023L Spice Model v1.0 Last Revised 2015/7/21


*---------- DMNH3010LK3 Spice Model ----------
.SUBCKT DMNH3010LK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.004289 
RS 30 3 0.001 
RG 20 2 2.36 
CGS 2 3 1.96E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.5E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.613 
+ TOX = 6E-008 NSUB = 1E+016 KP = 98.69 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 7.191E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.341E-010 N = 1.193 RS = 0.002974 BV = 30 CJO = 3.471E-010 VJ = 0.8 M = 0.6 TT = 1.37E-008 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMNH3010LK3 Spice Model v1.0 Last Revised 2015/01/07


*---------- DMT3006LDK Spice Model ----------
.SUBCKT DMT3006LDK 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001846 
RS 30 3 0.001 
RG 20 2 1.04 
CGS 2 3 1.248E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 8E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.961 
+ TOX = 6E-008 NSUB = 1E+016 KP = 69.31 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 4.861E-010 VJ = 0.8 M = 0.6541 
.MODEL DSUB D IS = 2.305E-010 N = 1.192 RS = 0.003032 BV = 30 CJO = 1.695E-009 VJ = 0.8 M = 0.6 TT=7E-09
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT3006LDK Spice Model v1.0M Last Revised 2016/3/2


*---------- DMN4800LSSQ Spice Model ----------
.SUBCKT DMN4800LSSQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.00609 
RS 30 3 0.001002 
RG 20 2 1.37 
CGS 2 3 6.734E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 7E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8E+005  ETA = 0.0001  VTO = 1.515 
+ TOX = 6.045E-008  NSUB = 3.203E+015  KP = 26.14  KAPPA = 26.53  U0 = 400 
.MODEL DCGD D  CJO = 5.334E-010  VJ = 0.3477  M = 0.4238 
.MODEL DSUB D  IS = 2.647E-009  N = 1.306  RS = 0.01224  BV = 35  CJO = 5.333E-011  VJ = 0.6305  M = 0.8 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN4800LSSQ Spice Model v1.0M Last Revised 2016/3/2


*---------- DMN3018SFGQ Spice Model ----------
.SUBCKT DMN3018SFGQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.009782 
RS 30 3 0.001 
RG 20 2 1.16 
CGS 2 3 7.066E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 6.066E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.353 
+ TOX = 6E-008 NSUB = 1E+016 KP = 52.61 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 4.065E-010 VJ = 1 M = 0.9231 
.MODEL DSUB D IS = 2.251E-010 N = 1.3 RS = 0.004445 BV = 33.26 CJO = 2.225E-010 VJ = 0.1072 M = 0.284 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN3018SFGQ  Spice Model v1.0M Last Revised 2016/2/25


*---------- DMTH3004LK3 Spice Model ----------
.SUBCKT DMTH3004LK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001 
RS 30 3 0.001 
RG 20 2 1 
CGS 2 3 2.049E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.8E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.164 
+ TOX = 6E-008 NSUB = 1E+016 KP = 135.6 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 9.486E-010 VJ = 2.289 M = 0.7048 
.MODEL DSUB D IS = 2.321E-010 N = 1.181 RS = 0.0003474 BV = 30 CJO = 1.937E-009 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH3004LK3 Spice Model v1.0 Last Revised 2015/11/10


*---------- DMT3020LFDB Spice Model ----------
.SUBCKT DMT3020LFDB 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.006049 
RS 30 3 0.001 
RG 20 2 1.08 
CGS 2 3 3.632E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.7E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.641 TOX = 6E-008 NSUB = 1E+016 KP = 18.96 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.731E-010 VJ = 0.8 M = 0.6441 
.MODEL DSUB D IS = 1.009E-009 N = 1.296 RS = 0.01293 BV = 30 CJO = 5.543E-010 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT3020LFDB Spice Model v1.0 Last Revised 2015/11/11


*---------- DMT3006LFG Spice Model ----------
.SUBCKT DMT3006LFG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001846 
RS 30 3 0.001 
RG 20 2 1.04 
CGS 2 3 1.248E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 8E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.961 
+ TOX = 6E-008 NSUB = 1E+016 KP = 69.31 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 4.861E-010 VJ = 0.8 M = 0.6541 
.MODEL DSUB D IS = 2.305E-010 N = 1.192 RS = 0.003032 BV = 30 CJO = 1.695E-009 VJ = 0.8 M = 0.6 TT=7E-09
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT3006LFG Spice Model v1.0M Last Revised 2016/5/3


*---------- DMT3020LFDF Spice Model ----------
.SUBCKT DMT3020LFDF 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.006049 
RS 30 3 0.001 
RG 20 2 1.08 
CGS 2 3 3.632E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.7E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.641 TOX = 6E-008 NSUB = 1E+016 KP = 18.96 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.731E-010 VJ = 0.8 M = 0.6441 
.MODEL DSUB D IS = 1.009E-009 N = 1.296 RS = 0.01293 BV = 30 CJO = 5.543E-010 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT3020LFDF Spice Model v1.0M Last Revised 2016/5/6


*---------- DMT3006LFDF Spice Model ----------
.SUBCKT DMT3006LFDF 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001846 
RS 30 3 0.001 
RG 20 2 1.04 
CGS 2 3 1.248E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 8E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.961 
+ TOX = 6E-008 NSUB = 1E+016 KP = 69.31 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 4.861E-010 VJ = 0.8 M = 0.6541 
.MODEL DSUB D IS = 2.305E-010 N = 1.192 RS = 0.003032 BV = 30 CJO = 1.695E-009 VJ = 0.8 M = 0.6 TT=7E-09
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT3006LFDF Spice Model v1.0M Last Revised 2016/5/3


*---------- DMT3006LPS Spice Model ----------
.SUBCKT DMT3006LPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001846 
RS 30 3 0.001 
RG 20 2 1.04 
CGS 2 3 1.248E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 8E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.961 
+ TOX = 6E-008 NSUB = 1E+016 KP = 69.31 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 4.861E-010 VJ = 0.8 M = 0.6541 
.MODEL DSUB D IS = 2.305E-010 N = 1.192 RS = 0.003032 BV = 30 CJO = 1.695E-009 VJ = 0.8 M = 0.6 TT=7E-09
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT3006LPS Spice Model v1.0M Last Revised 2016/5/3


*SRC=DMN100;DI_DMN100;MOSFETs N;Enh;30.0V 1.10A 0.150ohms  Diodes Inc. MOSFET
.MODEL DI_DMN100  NMOS( LEVEL=1 VTO=2.00 KP=11.5  GAMMA=2.48
+ PHI=.75  LAMBDA=306u RD=21.0m RS=21.0m
+ IS=550f  PB=0.800 MJ=0.460 CBD=199p 
+ CBS=238p  CGSO=360n CGDO=300n CGBO=840n  )   *   -- Assumes default L=100U W=100U --


*---------- DMN3008SFGQ Spice Model ----------
.SUBCKT DMN3008SFGQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001509 
RS 30 3 0.001 
RG 20 2 0.02 
CGS 2 3 3.299E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 4.5E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.645 
+ TOX = 6E-008 NSUB = 1E+016 KP = 135.4 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.825E-009 VJ = 0.7987 M = 0.6 
.MODEL DSUB D IS = 2.672E-010 N = 1.105 RS = 0.003471 BV = 35 CJO = 6.274E-010 VJ = 0.8 M = 0.6 TT=1E-08
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN3008SFGQ Spice Model v1.0M Last Revised 2016/5/3


*---------- DMN3030LSS Spice Model ----------
.SUBCKT DMN3030LSS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.005805 
RS 30 3 0.001 
RG 20 2 1.32 
CGS 2 3 6.922E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 9.2E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0.0143  VTO = 2.028 
+ TOX = 6E-008  NSUB = 1E+017  KP = 21.95  KAPPA = 105  U0 = 200 
.MODEL DCGD D  CJO = 4.611E-010  VJ = 0.3568  M = 0.4267 
.MODEL DSUB D  IS = 2.567E-010  N = 1.254  RS = 0.01257  BV = 35  CJO = 8.267E-011  VJ = 0.4558  M = 0.5515 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN3030LSS Spice Model v1.0 Last Revised 2011/5/30


*SRC=DMN3033LSD;DI_DMN3033LSD;MOSFETs N;Enh;30.0V 6.90A 22.0mohms  Diodes Inc MOSFET
*SYM=POWMOSN
.SUBCKT DI_DMN3033LSD   10 20 30
*     TERMINALS:  D  G  S
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  9.45m
RS  40  3  1.55m
RG  20  2  21.7
CGS  2  3  633p
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  843p
R1  13  0  1.00
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1.00
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.50n
.MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=60.0m
+ ETA=2.00m VTO=3.00 KP=13.5
.MODEL DCGD D (CJO=843p VJ=0.600 M=0.680
.MODEL DSUB D (IS=28.6n N=1.50 RS=65.2m BV=30.0
+ CJO=200p VJ=0.800 M=0.420 TT=252n
.MODEL DLIM D (IS=100U)
.ENDS


*SRC=DMN3051L;DI_DMN3051L;MOSFETs N;Enh;30.0V 5.80A 38.0mohms  Diodes Inc MOSFET
*SYM=POWMOSN
.SUBCKT DI_DMN3051L   10 20 30
*     TERMINALS:  D  G  S
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  17.0m
RS  40  3  1.95m
RG  20  2  47.0
CGS  2  3  343p
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  370p
R1  13  0  1.00
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1.00
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.50n
.MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m
+ ETA=2.00m VTO=2.20 KP=15.6
.MODEL DCGD D (CJO=370p VJ=0.600 M=0.680
.MODEL DSUB D (IS=24.1n N=1.50 RS=70.7m BV=30.0
+ CJO=132p VJ=0.800 M=0.420 TT=239n
.MODEL DLIM D (IS=100U)
.ENDS


*---------- DMT3004LFG Spice Model ----------
.SUBCKT DMT3004LFG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001 
RS 30 3 0.001 
RG 20 2 1 
CGS 2 3 2.049E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.8E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.164 
+ TOX = 6E-008 NSUB = 1E+016 KP = 135.6 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 9.486E-010 VJ = 2.289 M = 0.7048 
.MODEL DSUB D IS = 2.321E-010 N = 1.181 RS = 0.0003474 BV = 30 CJO = 1.937E-009 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT3004LFG Spice Model v1.0M Last Revised 2016/6/29


*---------- DMN3020UFDF Spice Model ----------
.SUBCKT DMN3020UFDF 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01197 
RS 30 3 0.001 
RG 20 2 1.27 
CGS 2 3 1.239E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.85E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9495 
+ TOX = 6E-008 NSUB = 1E+016 KP = 109.4 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 5.31E-010 VJ = 0.6 M = 0.6 
.MODEL DSUB D IS = 1.004E-008 N = 1.226 RS = 0.01837 BV = 35.5 CJO = 2.226E-010 VJ = 0.7186 M = 0.6022 TT = 3.5E-009 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN3020UFDF Spice Model v1.0M Last Revised 2016/7/19



*---------- DMT3002LPS Spice Model ----------
.SUBCKT DMT3002LPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.0001 
RS 30 3 0.001 
RG 20 2 1.04 
CGS 2 3 4.937E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.99 
+ TOX = 6E-008 NSUB = 1E+016 KP = 268.9 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.2E-009 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.244E-010 N = 1.155 RS = 0.0008535 BV = 30 CJO = 5E-009 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT3002LPS Spice Model v1.0M Last Revised 2016/2/4


*---------- DMN3055LFDB Spice Model ----------
.SUBCKT DMN3055LFDB 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01938 
RS 30 3 0.001 
RG 20 2 2.05 
CGS 2 3 4.156E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5.7E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.394 
+ TOX = 6E-008 NSUB = 1E+016 KP = 32.82 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 3.123E-010 VJ = 0.6 M = 0.6 
.MODEL DSUB D IS = 2.225E-010 N = 1.229 RS = 0.02329 BV = 35 CJO = 2.22E-010 VJ = 0.6 M = 0.6211 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN3055LFDB Spice Model v1.0M Last Revised 2016/5/9


*---------- DMTH3003LFG Spice Model ----------
.SUBCKT DMTH3003LFG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001 
RS 30 3 0.001 
RG 20 2 1 
CGS 2 3 2.049E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.8E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.164 
+ TOX = 6E-008 NSUB = 1E+016 KP = 135.6 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 9.486E-010 VJ = 2.289 M = 0.7048 
.MODEL DSUB D IS = 2.321E-010 N = 1.181 RS = 0.0003474 BV = 30 CJO = 1.937E-009 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH3003LFG Spice Model v1.0M Last Revised 2016/6/29


*---------- DMTH3002LPS Spice Model ----------
.SUBCKT DMTH3002LPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.0001 
RS 30 3 0.001 
RG 20 2 1.04 
CGS 2 3 4.937E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.99 
+ TOX = 6E-008 NSUB = 1E+016 KP = 268.9 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.2E-009 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.244E-010 N = 1.155 RS = 0.0008535 BV = 30 CJO = 5E-009 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH3002LPS Spice Model v1.0M Last Revised 2016/2/4



*---------- DMN3016LFDF Spice Model ----------
.SUBCKT DMN3016LFDF 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.007363 
RS 30 3 0.001 
RG 20 2 2.94 
CGS 2 3 1.344E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 9.9E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8E+005  ETA = 0.001  VTO = 2.213 
+ TOX = 6E-008  NSUB = 1E+016  KP = 176.5  U0 = 400  KAPPA = 4.441E-010 
.MODEL DCGD D  CJO = 4.27E-010  VJ = 0.7983  M = 0.6 
.MODEL DSUB D  IS = 8.592E-011  N = 1.184  RS = 0.003043  BV = 50  CJO = 3.379E-010  VJ = 0.6  M = 0.6 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN3016LFDF  Spice Model v1.0 Last Revised 2015/6/16



*---------- DMN3025LFDF Spice Model ----------
.SUBCKT DMN3025LFDF 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.0121 
RS 30 3 0.001 
RG 20 2 2.45 
CGS 2 3 5.929E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 6.45E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8E+005  ETA = 0.001  VTO = 1.863 
+ TOX = 6E-008  NSUB = 1E+016  KP = 52  U0 = 400  KAPPA = 4.441E-010 
.MODEL DCGD D  CJO = 3.069E-010  VJ = 0.7  M = 0.65 
.MODEL DSUB D  IS = 1.511E-011  N = 1.099  RS = 0.01954  BV = 45  CJO = 2.221E-010  VJ = 0.6319  M = 0.7672 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN3025LFDF Spice Model v1.0 Last Revised 2015/1/30



*---------- DMN3042LFDF Spice Model ----------
.SUBCKT DMN3042LFDF 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01631 
RS 30 3 0.001 
RG 20 2 3.19 
CGS 2 3 5.244E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 6.7E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.053 
+ TOX = 6E-008 NSUB = 1E+016 KP = 44.07 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 3.121E-010 VJ = 0.7018 M = 0.6 
.MODEL DSUB D IS = 1.011E-009 N = 1.157 RS = 0.0244 BV = 36 CJO = 2.1E-010 VJ = 0.7682 M = 0.6 TT=3.9E-09
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN3042LFDF Spice Model v1.0M Last Revised 2016/8/29


*---------- DMT3020LFCL Spice Model ----------
.SUBCKT DMT3020LFCL 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.006049 
RS 30 3 0.001 
RG 20 2 1.08 
CGS 2 3 3.632E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.7E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.641 TOX = 6E-008 NSUB = 1E+016 KP = 18.96 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.731E-010 VJ = 0.8 M = 0.6441 
.MODEL DSUB D IS = 1.009E-009 N = 1.296 RS = 0.01293 BV = 37.6 CJO = 5.543E-010 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT3020LFCL Spice Model v1.0M Last Revised 2016/7/14


*---------- DMT31M6LPS Spice Model ----------
.SUBCKT DMT31M6LPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 1E-009 
RS 30 3 0.001 
RG 20 2 0.94 
CGS 2 3 7.102E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 3.8E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.071 
+ TOX = 6E-008 NSUB = 1E+016 KP = 381.1 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 3E-009 VJ = 0.8 M = 0.7165 
.MODEL DSUB D IS = 2.338E-010 N = 1.114 RS = 0.00242 BV = 34 CJO = 5E-009 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT31M6LPS Spice Model v1.0M Last Revised 2016/8/31


*---------- ZXMN3A14FTA Spice Model ----------
.SUBCKT ZXMN3A14FQTA 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.02679 
RS 30 3 0.001 
RG 20 2 1.23 
CGS 2 3 3.56E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 4.2E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.548 
+ TOX = 6E-008 NSUB = 1E+016 KP = 9.886 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 2.613E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 1.518E-009 N = 1.343 RS = 0.04565 BV = 35 CJO = 2.328E-010 VJ = 0.8 M = 0.6  
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes ZXMN3A14FQTA Spice Model v1.0M Last Revised 2016/9/13



*---------- DMN3016LDV Spice Model ----------

.SUBCKT DMN3016LDV 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.007058 
RS 30 3 0.001 
RG 20 2 2.94 
CGS 2 3 1.348E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.222 
+ TOX = 6E-008 NSUB = 1E+016 KP = 121.1 U0 = 400 KAPPA = 1E-015 
.MODEL DCGD D CJO = 3.779E-010 VJ = 0.6 M = 0.4637 
.MODEL DSUB D IS = 2.322E-010 N = 1.242 RS = 0.002024 BV = 45 CJO = 1.63E-010 VJ = 0.7 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMN3016LDV Spice Model v1.0M Last Revised 2016/9/7



*---------- DMN3021LFDF Spice Model ----------
.SUBCKT DMN3021LFDF 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.007356 
RS 30 3 0.001 
RG 20 2 2.75 
CGS 2 3 6.551E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 4.4E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.915 
+ TOX = 6E-008 NSUB = 1E+016 KP = 48.83 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 3.203E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.259E-010 N = 1.266 RS = 0.00556 BV = 34 CJO = 2.269E-010 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN3021LFDF Spice Model v1.0M Last Revised 2016/8/29


*SRC=DMN3150LW;DI_DMN3150LW;MOSFETs N;Enh;28.0V 1.60A 88.0mohms  Diodes Inc MOSFET
*SYM=POWMOSN
.SUBCKT DI_DMN3150LW   10 20 30
*     TERMINALS:  D  G  S
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  40.8m
RS  40  3  3.20m
RG  20  2  93.7
CGS  2  3  257p
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  219p
R1  13  0  1.00
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1.00
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.50n
.MODEL DMOS NMOS(LEVEL=3 VMAX=58.3k THETA=80.0m
+ ETA=2.00m VTO=1.40 KP=21.8
.MODEL DCGD D (CJO=219p VJ=0.600 M=0.680
.MODEL DSUB D (IS=6.64n N=1.50 RS=0.256 BV=28.0
+ CJO=85.0p VJ=0.800 M=0.420 TT=162n
.MODEL DLIM D (IS=100U)
.ENDS


*SRC=DMN2009LSS;DI_DMN2009LSS;MOSFETs N;Enh;20.0V 12.0A 8.00mohms  Diodes Inc. MOSFET
*SYM=POWMOSN
.SUBCKT DI_DMN2009LSS   10 20 30
*     TERMINALS:  D  G  S
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  2.80m
RS  40  3  1.20m
RG  20  2  12.5
CGS  2  3  2.46n
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  663p
R1  13  0  1.00
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1.00
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.50n
.MODEL DMOS NMOS(LEVEL=3 VMAX=41.7k THETA=60.0m
+ ETA=2.00m VTO=3.00 KP=274
.MODEL DCGD D (CJO=663p VJ=0.600 M=0.680
.MODEL DSUB D (IS=49.8n N=1.50 RS=37.5m BV=20.0
+ CJO=1.28n VJ=0.800 M=0.420 TT=297n
.MODEL DLIM D (IS=100U)
.ENDS


*SYM=POWMOSN
.SUBCKT DMN2020LSN   D=10 G=20 S=30
*     TERMINALS:  D  G  S
M1   1  2  3  3  NMOS L=0.6U W=1943.229m
RD  10  1  5m
RS  30  3  4m
RG  20  2  1.5
CGS  2  3  952p
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  550p
R1  13  0  1.00
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1.00
D2  15  0  DLIM
DSD  3 10  DSUB
.MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k
+ ETA=0.1m VTO=1.525 TOX=25n NSUB=5.3e16
.MODEL DCGD D CJO=550p VJ=0.350 M=0.410
.MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20
+ CJO=116p VJ=0.120 M=0.380
.MODEL DLIM D IS=100U
.ENDS


*ZETEX ZXMN2A02N8 Spice Model v2.0 Last Revised 22/2/05
    *
    .SUBCKT ZXMN2A02N8 30 40 50
    *---connections---D-G-S
    M1 6 2 7 7 Nmod L=1.16E-6 W=2.3
    M2 7 2 7 6 Pmod L=1.3E-6 W=1.3
    RG 4 2 1
    RIN 2 5 1E12
    RD 3 6 Rdmod 0.0045
    RS 7 5 Rdmod 0.01
    RL 3 5 3E9
    C1 2 5 10E-12
    C2 3 2 5E-12
    D1 5 3  Dbodymod
    LD 3 30 1.3E-9
    LG 4 40 1.2E-9
    LS 5 50 1.2E-9
    .MODEL Nmod NMOS (LEVEL=3 TOX=4.5E-8 NSUB=10E16
    +VTO=1.365 KP=3.6E-5 NFS=2E11 KAPPA=0.1 UO=650 IS=1E-15 N=10)
    .MODEL Pmod PMOS (LEVEL=3 TOX=4.5E-8 NSUB=1.5E16
    +TPG=-1 IS=1E-15 N=10)
    .MODEL Dbodymod D (IS=2E-11 RS=.015 XTI=1.5 TRS1=1.5e-3 TT=7e-9
    +CJO=450e-12 BV=22)
    .MODEL Rdmod RES (TC1=3e-3 TC2=6E-6)
    .ENDS
    *
    *$
    *


*---------- DMG8601UFG Spice Model ----------
.SUBCKT DMG8601UFG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.01441 
RS 30 3 0.001 
RG 20 2 202.6 
CGS 2 3 1.466E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 1E-009 
R1 13 30 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1.361E+005  ETA = 0.001  VTO = 0.8913 
+ TOX = 6E-008  NSUB = 1E+016  KP = 97.33  KAPPA = 1  U0 = 400 
.MODEL DCGD D  CJO = 2.802E-010  VJ = 0.2313  M = 0.4878 
.MODEL DSUB D  IS = 2.098E-009  N = 1.133  RS = 0.02894  BV = 25  CJO = 2.541E-010  VJ = 0.1292  M = 0.32 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMG8601UFG Spice Model v1.0 Last Revised 2011/5/5


*---------- DMG6968UTS Spice Model ----------
.SUBCKT DMG6968UTS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.01441 
RS 30 3 0.001 
RG 20 2 202.6 
CGS 2 3 1.466E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 1E-009 
R1 13 30 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1.361E+005  ETA = 0.001  VTO = 0.8913 
+ TOX = 6E-008  NSUB = 1E+016  KP = 97.33  KAPPA = 1  U0 = 400 
.MODEL DCGD D  CJO = 2.802E-010  VJ = 0.2313  M = 0.4878 
.MODEL DSUB D  IS = 2.098E-009  N = 1.133  RS = 0.02894  BV = 25  CJO = 2.541E-010  VJ = 0.1292  M = 0.32 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMG6968UTS Spice Model v1.0 Last Revised 2011/5/5


*SRC=DMG6968UDM;DI_DMG6968UDM;MOSFETs N;Enh;20.0V 6.50A 25.0mohms  Diodes Inc MOSFET
*SYM=POWMOSN
.SUBCKT DI_DMG6968UDM   10 20 30
*     TERMINALS:  D  G  S
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  10.9m
RS  40  3  1.62m
RG  20  2  40.7
CGS  2  3  114p
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  204p
R1  13  0  1.00
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1.00
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.50n
.MODEL DMOS NMOS(LEVEL=3 VMAX=41.7k THETA=80.0m
+ ETA=2.00m VTO=0.900 KP=31.8
.MODEL DCGD D (CJO=204p VJ=0.600 M=0.680
.MODEL DSUB D (IS=27.0n N=1.50 RS=55.4m BV=20.0
+ CJO=134p VJ=0.800 M=0.420 TT=247n
.MODEL DLIM D (IS=100U)
.ENDS


*SYM=POWMOSN
.SUBCKT DMG9926USD   D=10 G=20 S=30
*     TERMINALS:  D  G  S
M1   1  2  3  3  NMOS L=0.6U W=0.8625
RD  10  1  16m
RS  30  3  4m
RG  20  2  1.5
CGS  2  3  872p
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  408p
R1  13  0  1.00
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1.00
D2  15  0  DLIM
DSD  3 10  DSUB
*********************************************
.MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k
+ ETA=0.1m VTO=1.0 TOX=16.8n NSUB=5.36e16
*********************************************
.MODEL DCGD D CJO=448p VJ=0.450 M=0.550
*********************************************
.MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20
+ CJO=28p VJ=0.800 M=0.420
*********************************************
.MODEL DLIM D IS=100U
*********************************************
.ENDS


*---------- DMG3414U Spice Model ----------
.SUBCKT DMG3414U 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.01338 
RS 30 3 1E-003
RG 20 2 18 
CGS 2 3 7.702E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 1.1E-009 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 5.027E-008  VTO = 0.8394  
+ TOX = 6E-008  NSUB = 1E+016  KP = 46.34  KAPPA = 1E-015  U0 = 400 
.MODEL DCGD D  CJO = 4.457E-010  VJ = 0.2472  M = 0.4558 
.MODEL DSUB D  IS = 4.271E-010  N = 1.076  RS = 0.05217  BV = 25  CJO = 3.405E-011  VJ = 0.2561  M = 0.4362 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMG3414U Spice Model v1.0 Last Revised 2011/7/7


*SRC=DMG6968U;DI_DMG6968U;MOSFETs N;Enh;20.0V 6.50A 25.0mohms  Diodes Inc MOSFET
*SYM=POWMOSN
.SUBCKT DI_DMG6968U   10 20 30
*     TERMINALS:  D  G  S
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  10.9m
RS  40  3  1.62m
RG  20  2  33.7
CGS  2  3  119p
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  226p
R1  13  0  1.00
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1.00
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.50n
.MODEL DMOS NMOS(LEVEL=3 VMAX=41.7k THETA=80.0m
+ ETA=2.00m VTO=0.900 KP=31.8
.MODEL DCGD D (CJO=226p VJ=0.600 M=0.680
.MODEL DSUB D (IS=27.0n N=1.50 RS=55.4m BV=20.0
+ CJO=176p VJ=0.800 M=0.420 TT=247n
.MODEL DLIM D (IS=100U)
.ENDS


*SYM=POWMOSN
.SUBCKT DMN2075   D=10 G=20 S=30
*     TERMINALS:  D  G  S
M1   1  2  3  3  NMOS L=0.6U W=0.8625
RD  10  1  16m
RS  30  3  4m
RG  20  2  1.24
CGS  2  3  872p
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  408p
R1  13  0  1.00
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1.00
D2  15  0  DLIM
DSD  3 10  DSUB
.MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k
+ ETA=0.1m VTO=1.0 TOX=16.8n NSUB=5.36e16
.MODEL DCGD D CJO=448p VJ=0.450 M=0.550
.MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=25.0
+ CJO=28p VJ=0.800 M=0.420
.MODEL DLIM D IS=100U
.ENDS


*SYM=POWMOSN
.SUBCKT DMG9926UDM   D=10 G=20 S=30
*     TERMINALS:  D  G  S
M1   1  2  3  3  NMOS L=0.6U W=0.8625
RD  10  1  16m
RS  30  3  4m
RG  20  2  1.5
CGS  2  3  872p
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  408p
R1  13  0  1.00
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1.00
D2  15  0  DLIM
DSD  3 10  DSUB
*********************************************
.MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k
+ ETA=0.1m VTO=1.0 TOX=16.8n NSUB=5.36e16
*********************************************
.MODEL DCGD D CJO=448p VJ=0.450 M=0.550
*********************************************
.MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20
+ CJO=28p VJ=0.800 M=0.420
*********************************************
.MODEL DLIM D IS=100U
*********************************************
.ENDS


*---------- DMN2041LSD Spice Model ----------
.SUBCKT DMN2041LSD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.01312 
RS 30 3 0.001002 
RG 20 2 1.37 
CGS 2 3 4.74E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 9E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8E+005  ETA = 0.0001  VTO = 1.023 
+ TOX = 6E-008  NSUB = 1.901E+016  KP = 50  KAPPA = 30.04  U0 = 400 
.MODEL DCGD D  CJO = 4.457E-010  VJ = 0.2472  M = 0.4558 
.MODEL DSUB D  IS = 2.93E-009  N = 1.251  RS = 0.02983  BV = 25  CJO = 3.405E-011  VJ = 0.2561  M = 0.4362 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN2041LSD Spice Model v1.0 Last Revised 2010/11/18


*SRC=DMN2050L;DI_DMN2050L;MOSFETs N;Enh;20.0V 5.90A 29.0mohms  Diodes Inc MOSFET
*SYM=POWMOSN
.SUBCKT DI_DMN2050L   10 20 30
*     TERMINALS:  D  G  S
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  12.8m
RS  40  3  1.72m
RG  20  2  25.4
CGS  2  3  415p
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  825p
R1  13  0  1.00
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1.00
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.50n
.MODEL DMOS NMOS(LEVEL=3 VMAX=41.7k THETA=80.0m
+ ETA=1.83m VTO=1.40 KP=75.8
.MODEL DCGD D (CJO=825p VJ=0.600 M=0.680
.MODEL DSUB D (IS=24.5n N=1.50 RS=25.4m BV=20.0
+ CJO=215p VJ=0.800 M=0.420 TT=234n
.MODEL DLIM D (IS=100U)
.ENDS


*---------- DMN2075U Spice Model ----------
.SUBCKT DMN2075U 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.03596 
RS 30 3 0.001 
RG 20 2 1.5 
CGS 2 3 5.381E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 7E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9505 
+ TOX = 6E-008 NSUB = 1E+016 KP = 55.47 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 3.128E-010 VJ = 0.6 M = 0.6001 
.MODEL DSUB D IS = 4.456E-010 N = 1.107 RS = 0.06698 BV = 22 CJO = 1E-015 VJ = 0.6 M = 0.7957 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN2075U Spice Model v1.0M Last Revised 2016/4/7


*
*Zetex ZXMN2B03E6 Spice Model v1.0 Last Revised 7/12/07
*
.SUBCKT ZXMN2B03E6 30 40 50
*------connections-------D-G-S
M1 6 2 5 5 Nmod L=1.16E-6 W=1.83
M2 5 2 5 6 Pmod L=1.2E-6 W=0.67
RG 4 22 1.5
RIN 2 5 1E12
RD 3 6 Rmod1 0.015
RL 3 5 3E9
C1 2 5 10E-12
C2 3 4 3E-12
D1 5 3  Dmod1
Rt 5 61 Rmod2 1
Vt 61 62 1
It 5 62 1
Et 2 22  62 5 1
LD 3 30 0.5E-9
LG 4 40 1.0E-9
LS 5 50 1.0E-9
.MODEL Nmod NMOS (LEVEL=3 TOX=3.5E-8 NSUB=1E17 VTO=0.8
+KP=7E-5 RS=.020 NFS=1E11 KAPPA=0.06 IS=1E-15 N=10)
.MODEL Pmod PMOS (LEVEL=3 TOX=3.5E-8 NSUB=4.1E16
+TPG=-1 IS=1E-15 N=10)
.MODEL Dmod1 D (IS=1E-11 RS=.05 IKF=.5 TT=0.6E-8
+CJO=200e-12  BV=23)
.MODEL Rmod1 RES (TC1=8e-3 TC2=0.9E-5)
.MODEL Rmod2 RES (TC1=-1.2e-3 TC2=-1E-6)
.ENDS ZXMN2B03E6
*
*$
*
*                (c)  2007 Zetex Semiconductors plc
*
*   The copyright in these models  and  the designs embodied belong
*   to Zetex Semiconductors plc (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Zetex, its distributors
*   or agents.
*
*   Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*ZETEX ZXM64N02X Spice Model v1.0 Last Revised 10/01/2005
    *
    .SUBCKT ZXM64N02X 3 4 5
    *----connections----D-G-S
    *
    M1 6 20 8 8 MOSMOD
    M2 6 20 8 8 MOSMODS
    RG 4 2 1.7
    RIN 2 8 200E6
    RD 3 6 RDSMOD 0.02
    RS 8 5 RDSMOD 0.004
    RL 3 5 35E6
    C1 2 8 1000E-12
    C2 2 3 130E-12 
    C3 15 14 1150E-12
    C4 16 8 1100E-12
    D1 5 3 DMOD1
    S1 2 15 14 13 SMOD1a
    S2 13 15 14 13 SMOD1b
    S3 16 13 13 8 SMOD2a
    S4 16 2 13 8 SMOD2b
    Egs2 13 8 2 8 1
    Eds1 14 8 3 8 1
    Egt1 20 2 5 21 1
    Vgt1 5 22 1
    Igt1 5 21 1
    Rgt 21 22 RMOD2 1
    .MODEL MOSMOD NMOS VTO=1.29 IS=1E-15 KP=35 LAMBDA=4.9E-3
    .MODEL MOSMODS NMOS VTO=0.8 IS=1E-15 KP=0.35
    .MODEL DMOD1 D IS=6E-13 RS=0.025 BV=22 CJO=750E-12 IBV=1E-6 TT=21e-9
    .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4  VON=-1 VOFF=1.5
    .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4  VON=1.5 VOFF=-1
    .MODEL SMOD2a VSWITCH RON=1e2 ROFF=1e4  VON=-1.5 VOFF=-3.5
    .MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4  VON=-3.5 VOFF=-1.5
    .MODEL RDSMOD RES (TC1=2.3E-3 TC2=0.8E-5)
    .MODEL RMOD2 RES (TC1=-1.9e-3 TC2=1e-6)
    .ENDS  ZXM64N02X
    *
    *$
    *


*DIODES_INC_SPICE_MODEL ZXMN2F30FH N-channel MOSFET
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=27Oct2014
*VERSION=1




.SUBCKT ZXMN2F30FH 10 20 30
M1 1 2 3 3  Nmod1
RD 10 1 Rmod1 15E-3
RS 23 3 Rmod1 10E-3
RG 20 22 10
RIN 20 23 2E11
RDS 10 23 6E9
CGS 2 3 20E-12 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 36E-12 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 23 10  DSUB
EL 2 22 1 3 0.015
LS  30 23 1n
.MODEL Nmod1 NMOS (LEVEL=3  VTO=1.95 KP=90  NFS=8E12 TOX=3.5E-8  NSUB=1E17 IS=1E-15 N=10)
.MODEL DCGD D (CJO = 16E-12  VJ = 0.5  M = 0.43)
.MODEL DSUB D (IS = .1E-10 N=1.1 RS=0.003 BV=22 CJO=10E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=3E-3)
.MODEL DLIM D (IS=100U N=1)
.MODEL Rmod1 RES (TC1=3e-6 TC2=6E-6)
.ENDS

.SIMULATOR DEFAULT

.SIMULATOR DEFAULT

*                (c)  2014 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*---------- DMN2100UDM Spice Model ----------
.SUBCKT DMN2100UDM 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.01441 
RS 30 3 0.001 
RG 20 2 202.6 
CGS 2 3 1.466E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 1E-009 
R1 13 30 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1.361E+005  ETA = 0.001  VTO = 0.8913 
+ TOX = 6E-008  NSUB = 1E+016  KP = 97.33  KAPPA = 1  U0 = 400 
.MODEL DCGD D  CJO = 2.802E-010  VJ = 0.2313  M = 0.4878 
.MODEL DSUB D  IS = 2.098E-009  N = 1.133  RS = 0.02894  BV = 25  CJO = 2.541E-010  VJ = 0.1292  M = 0.32 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN2100UDM Spice Model v1.0 Last Revised 2013/6/28


*ZETEX ZXMN2B14FH Spice Model v1.0 Last Revised 30/11/07
    *
    .SUBCKT ZXMN2B14FH 30 40 50
    *------connections-------D-G-S
    M1 6 2 5 5 Nmod L=1E-6 W=1.1
    M2 5 2 5 6 Pmod L=1E-6 W=0.55
    RG 4 22 2.8
    RIN 2 5 1E12
    RD 3 6 Rmod1 0.03
    RL 3 5 3E9
    C1 2 5 300E-12
    C2 3 4 3E-12
    D1 5 3  Dmod1
    Rt 5 61 Rmod2 1
    Vt 61 62 1
    It 5 62 1
    Et 2 22  62 5 1
    LD 3 30 0.5E-9
    LG 4 40 1.0E-9
    LS 5 50 1.0E-9
    .MODEL Nmod NMOS (LEVEL=3 TOX=3.5E-8 NSUB=1E17 VTO=0.84
    +KP=3.7E-5 RS=.006 NFS=1E11 KAPPA=0.06 IS=1E-15 N=10)
    .MODEL Pmod PMOS (LEVEL=3 TOX=3.5E-8 NSUB=4.1E16
    +TPG=-1 IS=1E-15 N=10)
    .MODEL Dmod1 D (IS=1E-11 RS=.03 IKF=.5 TRS1=3e-3 TT=0.6E-8
    +CJO=200e-12  BV=23)
    .MODEL Rmod1 RES (TC1=4.2e-3 TC2=0.8E-5)
    .MODEL Rmod2 RES (TC1=-0.9e-3 TC2=0E-5)
    .ENDS ZXMN2B14FH
    *
    *$
    *


*ZETEX ZXMN2A03E6 Spice Model v1.0 Last Revised 11/08/05
    *
    .SUBCKT ZXMN2A03E6 30 40 50
    *------connections-------D-G-S
    M1 6 20 5 5 Nmod 
    M2 5 20 5 6 Pmod 
    RG 4 2 1
    RIN 2 5 1E12
    RD 3 6 Rmod1 0.04
    RL 3 5 3E9
    C1 2 5 1.5E-10
    C2 3 4 2.5E-10
    D1 5 3  Dbodymod
    Egt1 2 20 21 5 1
    Vgt1 5 22 1
    Igt1 5 21 1
    Rgt 21 22 Rmod2 1.45
    LD 3 30 0.3E-9
    LG 4 40 1.9E-9
    LS 5 50 1.9E-9
    .MODEL Nmod NMOS (LEVEL=3 L=0.7E-6 W=0.77 TOX=45E-9 NSUB=4.09E16 UO=929)
    +VTO=0.9 KP=34E-6 GAMMA=1.52 PHI=0.77 RS=0.02 KAPPA=0.01)
    .MODEL Pmod PMOS (LEVEL=3 L=0.6E-6 W=0.8 TOX=70E-9 NSUB=4.09E16 UO=373)
    .MODEL Dbodymod D (IS=2E-11 N=1 IKF=3 RS=0.05 TRS1=1E-5 TRS2=3E-5 XTI=0.1)
    .MODEL Rmod1 RES (TC1=0 TC2=0)
    .MODEL Rmod2 RES (TC1=3E-4 TC2=1E-7)
    .ENDS ZXMN2A03E6
    *
    *$
    *


*ZETEX ZXMN2A14F Spice Model v1.0 Last Revised 22/2/05
    *
    .SUBCKT ZXMN2A14F 30 40 50
    *----connections-----D-G-S
    M1 6 20 5 5 Nmod L=1.16E-6 W=0.74
    M2 5 20 5 6 Pmod L=1.3E-6 W=0.45
    RG 4 2 3.5
    RIN 2 5 1E12
    RD 3 6 Rmod1 0.015
    RL 3 5 3E12
    C1 2 5 8.5E-12
    C2 3 4 3.5E-12
    D1 5 3  Dmod1
    Egt1 20 2 21 5 1
    Vgt1 5 22 1
    Igt1 5 21 1
    Rgt 21 22 Rmod2 1
    LD 3 30 0.5E-9
    LG 4 40 1.0E-9
    LS 5 50 1.0E-9
    .MODEL Nmod NMOS (LEVEL=3 TOX=4.5E-8 NSUB=5E16
    +VTO=1.25 KP=10E-5 RS=.027  NFS=1E9 KAPPA=0.06 UO=650 IS=1E-15 N=10)
    .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=3.3E16
    +TPG=-1 IS=1E-15 N=10)
    .MODEL Dmod1 D (IS=1E-10 RS=.054 IKF=0.04 TRS1=1.5e-3
    +CJO=600e-12  BV=23)
    .MODEL Rmod1 RES (TC1=8.2e-3 TC2=2.3E-5)
    .MODEL Rmod2 RES (TC1=-3E-4 TC2=0E-6)
    .ENDS ZXMN2A14F
    *
    *$
    *


*
*Zetex ZXMN2F34FH Spice Model v1.0 Last Revised 31/07/08
*
.SUBCKT ZXMN2F34FH 3 4 5
*------connections-------D-G-S
M1 6 20 8 8 Nmod
RG 4 2 7
RD 3 6 Rmod1 0.025
RS 8 5 Rmod1 0.0033 
RL 3 5 100E6
D1 5 3 Dmod1
I1 8 21 1
V1 22 21 1
RT 22 8 Rmod2 1
Et 2 20 21 8 1
Egs2 13 8 2 8 1
Eds1 14 8 3 8 1
C1 2 8 200E-12
C2 2 3  40E-12
C3 15 14 270E-12 
C4 16 8 230E-12
S1 2 15 14 13 SMOD1
S2 13 15 14 13 SMOD2
S3 16 13 13 8 SMOD3
S4 16 2 13 8 SMOD4
.MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=0.5 VOFF=1.5
.MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=1.5 VOFF=0.5
.MODEL SMOD3 VSWITCH RON=.001 ROFF=100  VON=-2 VOFF=-3
.MODEL SMOD4 VSWITCH RON=.001 ROFF=100  VON=-3 VOFF=-2
.MODEL Nmod NMOS (LEVEL=3  VTO=1.574 KP=16  NFS=1.33E12 KAPPA=500 TOX=30E-9  NSUB=1E16 IS=1E-15 N=10)
.MODEL Dmod1 D (IS=8.7E-14 RS=0.026 CJO=320E-12 VJ=0.55 M=0.45 TT=1e-9 TRS1=1e-4  BV=22)
.MODEL Rmod1 RES (TC1=3.1e-3 TC2=0.6E-5)
.MODEL Rmod2 RES (TC1=-1.9e-3 TC2=-6E-6)
.ENDS ZXMN2F34FH
*
*$
*
*                (c)  2008 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA


*---------- DMG3420U Spice Model ----------
.SUBCKT DMG3420U 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.02158 
RS 30 3 0.001 
RG 20 2 1.53 
CGS 2 3 3.785E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 6.25E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0.009674  VTO = 1.32 
+ TOX = 6E-008  NSUB = 1E+016  KP = 53.82  KAPPA = 1E-015  U0 = 400 
.MODEL DCGD D  CJO = 3.069E-010  VJ = 0.1752  M = 0.4052 
.MODEL DSUB D  IS = 8.863E-010  N = 1.372  RS = 0.01813  BV = 22  CJO = 4.022E-011  VJ = 0.2305  M = 0.4418 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMG3420U Spice Model v1.0 Last Revised 2010/5/9


*SRC=DMN2112SN;DI_DMN2112SN;MOSFETs N;Enh;20.0V 1.20A 0.100ohms  DIODES INC MOSFET
.MODEL DI_DMN2112SN  NMOS( LEVEL=1 VTO=1.20 KP=35.3  GAMMA=1.49
+ PHI=.75  LAMBDA=83.3u RD=14.0m RS=14.0m
+ IS=600f  PB=0.800 MJ=0.460 CBD=248p 
+ CBS=298p  CGSO=540n CGDO=450n CGBO=1.21u  )
*   -- Assumes default L=100U W=100U --


*SRC=DMN2215UDM;DI_DMN2215UDM;MOSFETs N;Enh;20.0V 2.00A 0.100ohms  Diodes Inc MOSFET
*SYM=POWMOSN
.SUBCKT DI_DMN2215UDM   10 20 30
*     TERMINALS:  D  G  S
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  46.5m
RS  40  3  3.50m
RG  20  2  75.0
CGS  2  3  158p
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  211p
R1  13  0  1.00
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1.00
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.50n
.MODEL DMOS NMOS(LEVEL=3 VMAX=41.7k THETA=80.0m
+ ETA=2.00m VTO=1.00 KP=25.9Meg
.MODEL DCGD D (CJO=211p VJ=0.600 M=0.680
.MODEL DSUB D (IS=8.30n N=1.50 RS=0.175 BV=20.0
+ CJO=65.6p VJ=0.800 M=0.420 TT=174n
.MODEL DLIM D (IS=100U)
.ENDS


*SRC=DMN2114SN;DI_DMN2114SN;MOSFETs N;Enh;20.0V 1.20A 0.100ohms  DIODES INC MOSFET
.MODEL DI_DMN2114SN  NMOS( LEVEL=1 VTO=1.40 KP=21.8  GAMMA=1.74
+ PHI=.75  LAMBDA=83.3u RD=14.0m RS=14.0m
+ IS=600f  PB=0.800 MJ=0.460 CBD=248p 
+ CBS=298p  CGSO=540n CGDO=450n CGBO=810n  )
*   -- Assumes default L=100U W=100U --


*SRC=DMN2230U;DI_DMN2230U;MOSFETs N;Enh;20.0V 2.00A 0.110ohms  Diodes Inc MOSFET
.MODEL DI_DMN2230U  NMOS( LEVEL=1 VTO=1.00 KP=10.4  GAMMA=1.24
+ PHI=.75  LAMBDA=127u RD=15.4m RS=15.4m
+ IS=1.00p  PB=0.800 MJ=0.460 CBD=46.4p 
+ CBS=55.6p  CGSO=360n CGDO=300n CGBO=1.22u  )
*   -- Assumes default L=100U W=100U --


*ZETEX ZXMN2A01E6 Spice Model v2.0 Last Revised 22/2/05
    *
    .SUBCKT ZXMN2A01E6 30 40 50
    *------connections-------D-G-S
    M1 6 20 5 5 Nmod L=1.16E-6 W=0.46
    M2 5 20 5 6 Pmod L=1.3E-6 W=0.22
    RG 4 2 5
    RIN 2 5 1E12
    RD 3 6 Rmod1 0.036
    RL 3 5 3E9
    C1 2 5 8.5E-12
    C2 3 4 3E-12
    D1 5 3  Dbodymod
    Egt1 2 20 21 5 1
    Vgt1 5 22 1
    Igt1 5 21 1
    Rgt 21 22 Rmod2 1
    LD 3 30 0.3E-9
    LG 4 40 1.9E-9
    LS 5 50 1.9E-9
    .MODEL Nmod NMOS (LEVEL=3 TOX=4.5E-8 NSUB=3.5E16 VTO=1.31
    +KP=4E-5 RS=.03 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10)
    .MODEL Pmod PMOS (LEVEL=3 TOX=4.5E-8 NSUB=3.3E16
    +TPG=-1 IS=1E-15 N=10)
    .MODEL Dbodymod D (IS=5E-12 RS=.025 IKF=0.1 TRS1=1.5e-3
    +CJO=230e-12  BV=23)
    .MODEL Rmod1 RES (TC1=5.8e-3 TC2=1.3E-5)
    .MODEL Rmod2 RES (TC1=-3e-4 TC2=0)
    .ENDS
    *
    *$
    *


*ZETEX ZXMN2A01F Spice Model v2.0 Last Revised 22/2/05
    *
    .SUBCKT ZXMN2A01F 30 40 50
    *------connections-------D-G-S
    M1 6 20 5 5 Nmod L=1.16E-6 W=0.46
    M2 5 20 5 6 Pmod L=1.3E-6 W=0.22
    RG 4 2 5
    RIN 2 5 1E12
    RD 3 6 Rmod1 0.036
    RL 3 5 3E9
    C1 2 5 8.5E-12
    C2 3 4 3E-12
    D1 5 3  Dbodymod
    Egt1 2 20 21 5 1
    Vgt1 5 22 1
    Igt1 5 21 1
    Rgt 21 22 Rmod2 1
    LD 3 30 0.5E-9
    LG 4 40 1.0E-9
    LS 5 50 1.0E-9
    .MODEL Nmod NMOS (LEVEL=3 TOX=4.5E-8 NSUB=3.5E16 VTO=1.31
    +KP=4E-5 RS=.03 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10)
    .MODEL Pmod PMOS (LEVEL=3 TOX=4.5E-8 NSUB=3.3E16
    +TPG=-1 IS=1E-15 N=10)
    .MODEL Dbodymod D (IS=5E-12 RS=.025 IKF=0.1 TRS1=1.5e-3
    +CJO=230e-12  BV=23)
    .MODEL Rmod1 RES (TC1=5.8e-3 TC2=1.3E-5)
    .MODEL Rmod2 RES (TC1=-3e-4 TC2=0)
    .ENDS ZXMN2A01F
    *
    *$
    *


*ZETEX ZXMD63N02X Spice Model v1.0 Last Revised 3/7/00
    *
    .SUBCKT ZXMD63N02X 3 4 5
    *               D G S
    M1 3 2 5 5 M63N02
    RG 4 2 18
    RL 3 5 1E9
    C1 2 5 700E-12
    C2 3 2 50E-12
    D1 5 3 D63N02
    *
    .MODEL M63N02 NMOS VTO=1.40 RS=0.04 RD=0.02 KP=15
    +CBD=600E-12 LAMBDA=8.7E-3
    .MODEL D63N02 D IS=4E-12 N=1.04 IKF=82E-3 RS=105E-3
    .ENDS ZXMD63N02X
    *
    *$
    *


*ZETEX ZXM61N02F Spice Model v1.0 Last Revised 24/2/04
    *
    .SUBCKT ZXM61N02F 3 4 5
    *----connections----D-G-S
    *
    M1 6 20 8 8 MOSMOD
    M2 6 20 8 8 MOSMODS
    RG 4 2 6
    RIN 2 8 200E6
    RD 3 6 RMOD1 0.03
    RS 8 5 RMOD1 0.0225
    RL 3 5 35E6
    C1 2 8 158E-12
    C3 15 14 175E-12
    C4 16 8 183E-12
    D1 5 3 DMOD1
    D2 17 3 DMOD2
    S1 2 15 14 13 SMOD1a
    S2 13 15 14 13 SMOD1b
    S3 16 13 13 8 SMOD2a
    S4 16 2 13 8 SMOD2b
    Egs1 2 17 2 8 1
    Egs2 13 8 2 8 1
    Eds1 14 8 3 8 1
    Egt1 2 20 21 8 -1
    Vgt1 8 22 1
    Igt1 8 21 1
    Rgt 21 22 RMOD2 1
    .MODEL MOSMOD NMOS VTO=1.35 IS=1E-15 KP=5.5 CBD=90E-12 LAMBDA=4.9E-3
    .MODEL MOSMODS NMOS VTO=0.95 IS=1E-15 KP=0.055
    .MODEL DMOD1 D IS=1E-13 RS=0.15 BV=24 IBV=1E-6 TT=9e-9
    .MODEL DMOD2 D CJO=190e-12 IS=1e-30 N=10
    .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4  VON=-1.75 VOFF=2.75
    .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4  VON=2.75 VOFF=-1.75
    .MODEL SMOD2a VSWITCH RON=1e2 ROFF=1e4  VON=-1.5 VOFF=-3.5
    .MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4  VON=-3.5 VOFF=-1.5
    .MODEL RMOD1 RES (TC1=2.5E-3 TC2=1.8E-5)
    .MODEL RMOD2 RES (TC1=3.3E-3 TC2=1.5E-6)
    .ENDS  ZXM61N02F
    *
    *$
    *


*SYM=POWMOSN
.SUBCKT DMG1012T   D=10 G=20 S=30
*     TERMINALS:  D  G  S
M1   1  20  3  3  NMOS L=0.6U W=47.66m
RD  10  1  220m
RS  30  3  80m
CGS  20  3  57p
EGD 12  0  20  1  1
VFB 14  0  0
FFB  20  1  VFB  1
CGD 13 14  27p
R1  13  0  1.00
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1.00
D2  15  0  DLIM
DSD  3 10  DSUB
.MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k
+ ETA=0.1m VTO=0.99 TOX=16.8n NSUB=4.57e16
.MODEL DCGD D CJO=27p VJ=80m M=0.320
.MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20
+ CJO=14p VJ=0.800 M=0.420
.MODEL DLIM D IS=100U
.ENDS


*---------- DMN2004K Spice Model ----------
.SUBCKT DMN2004K 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.1925 
RS 30 3 0.001 
RG 20 2 68 
CGS 2 3 3.272E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 6.7E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0.01  VTO = 0.9058 
+ TOX = 6E-008  NSUB = 1E+016  KP = 3.223  U0 = 400  KAPPA = 15.35 
.MODEL DCGD D  CJO = 1.94E-011  VJ = 0.1108  M = 0.3101 
.MODEL DSUB D  IS = 1E-009  N = 1.905  RS = 0.02633  BV = 25  CJO = 5.066E-012  VJ = 0.1753  M = 0.2672 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN2004K Spice Model v1.0 Last Revised 2011/10/27


*---------- DMN2004TK Spice Model ----------
.SUBCKT DMN2004TK 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.1925 
RS 30 3 0.001 
RG 20 2 68 
CGS 2 3 3.272E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 6.7E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0.01  VTO = 0.9058 
+ TOX = 6E-008  NSUB = 1E+016  KP = 3.223  U0 = 400  KAPPA = 15.35 
.MODEL DCGD D  CJO = 1.94E-011  VJ = 0.1108  M = 0.3101 
.MODEL DSUB D  IS = 1E-009  N = 1.905  RS = 0.02633  BV = 25  CJO = 5.066E-012  VJ = 0.1753  M = 0.2672 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN2004TK Spice Model v1.0 Last Revised 2011/10/27


*---------- DMN2004VK Spice Model ----------
.SUBCKT DMN2004VK 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.1925 
RS 30 3 0.001 
RG 20 2 68 
CGS 2 3 3.272E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 6.7E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0.01  VTO = 0.9058 
+ TOX = 6E-008  NSUB = 1E+016  KP = 3.223  U0 = 400  KAPPA = 15.35 
.MODEL DCGD D  CJO = 1.94E-011  VJ = 0.1108  M = 0.3101 
.MODEL DSUB D  IS = 1E-009  N = 1.905  RS = 0.02633  BV = 25  CJO = 5.066E-012  VJ = 0.1753  M = 0.2672 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN2004VK Spice Model v1.0 Last Revised 2011/10/27


*---------- DMN2005K Spice Model ----------
.SUBCKT DMN2005K 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.1925 
RS 30 3 0.001 
RG 20 2 68 
CGS 2 3 3.272E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 6.7E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0.01  VTO = 0.9058 
+ TOX = 6E-008  NSUB = 1E+016  KP = 3.223  U0 = 400  KAPPA = 15.35 
.MODEL DCGD D  CJO = 1.94E-011  VJ = 0.1108  M = 0.3101 
.MODEL DSUB D  IS = 1E-009  N = 1.905  RS = 0.02633  BV = 25  CJO = 5.066E-012  VJ = 0.1753  M = 0.2672 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN2005K Spice Model v1.0 Last Revised 2011/11/15


*---------- DMN2005DLP4K Spice Model ----------
.SUBCKT DMN2005DLP4K 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.1925 
RS 30 3 0.001 
RG 20 2 68 
CGS 2 3 3.272E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 6.7E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0.01  VTO = 0.9058 
+ TOX = 6E-008  NSUB = 1E+016  KP = 3.223  U0 = 400  KAPPA = 15.35 
.MODEL DCGD D  CJO = 1.94E-011  VJ = 0.1108  M = 0.3101 
.MODEL DSUB D  IS = 1E-009  N = 1.905  RS = 0.02633  BV = 25  CJO = 5.066E-012  VJ = 0.1753  M = 0.2672 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN2005DLP4K Spice Model v1.0 Last Revised 2011/11/15


*---------- DMN2005LP4K Spice Model ----------
.SUBCKT DMN2005LP4K 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.1925 
RS 30 3 0.001 
RG 20 2 68 
CGS 2 3 3.272E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 6.7E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0.01  VTO = 0.9058 
+ TOX = 6E-008  NSUB = 1E+016  KP = 3.223  U0 = 400  KAPPA = 15.35 
.MODEL DCGD D  CJO = 1.94E-011  VJ = 0.1108  M = 0.3101 
.MODEL DSUB D  IS = 1E-009  N = 1.905  RS = 0.02633  BV = 25  CJO = 5.066E-012  VJ = 0.1753  M = 0.2672 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DDMN2005LP4K Spice Model v1.0 Last Revised 2011/11/15


*---------- DMN2005LPK Spice Model ----------
.SUBCKT DMN2005LPK 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.1925 
RS 30 3 0.001 
RG 20 2 68 
CGS 2 3 3.272E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 6.7E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0.01  VTO = 0.9058 
+ TOX = 6E-008  NSUB = 1E+016  KP = 3.223  U0 = 400  KAPPA = 15.35 
.MODEL DCGD D  CJO = 1.94E-011  VJ = 0.1108  M = 0.3101 
.MODEL DSUB D  IS = 1E-009  N = 1.905  RS = 0.02633  BV = 25  CJO = 5.066E-012  VJ = 0.1753  M = 0.2672 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN2005LPK Spice Model v1.0 Last Revised 2011/11/15


*---------- DMN2016UTS Spice Model ----------
.SUBCKT DMN2016UTS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.01185 
RS 30 3 0.001 
RG 20 2 1.42 
CGS 2 3 1.392E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 1.85E-009 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0.01011  VTO = 1.042 
+ TOX = 6E-008  NSUB = 1E+016  KP = 143.4  KAPPA = 20.85  U0 = 400 
.MODEL DCGD D  CJO = 6.156E-010  VJ = 0.1767  M = 0.3617 
.MODEL DSUB D  IS = 7.1E-010  N = 1.3  RS = 0.01232  BV = 25  CJO = 7.957E-011  VJ = 0.3347  M = 0.4933 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN2016UTS Spice Model v1.0 Last Revised 2011/1/31


*
*Zetex ZXMN2B01F Spice Model v1.0 Last Revised 5/12/07
*
.SUBCKT ZXMN2B01F 30 40 50
*------connections-------D-G-S
M1 6 2 5 5 Nmod L=1.16E-6 W=0.55
M2 5 2 5 6 Pmod L=1.2E-6 W=0.22
RG 4 22 4.2
RIN 2 5 1E12
RD 3 6 Rmod1 0.05
RL 3 5 3E9
C1 2 5 10E-12
C2 3 4 3E-12
D1 5 3  Dmod1
Rt 5 61 Rmod2 1
Vt 61 62 1
It 5 62 1
Et 2 22  62 5 1
LD 3 30 0.5E-9
LG 4 40 1.0E-9
LS 5 50 1.0E-9
.MODEL Nmod NMOS (LEVEL=3 TOX=3.5E-8 NSUB=1E17 VTO=0.66
+KP=7E-5 RS=.025  KAPPA=0.07 NFS=2E11 IS=1E-15 N=10)
.MODEL Pmod PMOS (LEVEL=3 TOX=3.5E-8 NSUB=4.1E16
+TPG=-1 IS=1E-15 N=10)
.MODEL Dmod1 D (IS=6E-13 RS=.025 IKF=0.1 TRS1=3e-3 TT=0.6E-8
+CJO=115e-12  BV=23)
.MODEL Rmod1 RES (TC1=4.6e-3 TC2=0.9E-5)
.MODEL Rmod2 RES (TC1=-1.4e-3 TC2=0E-5)
.ENDS ZXMN2B01F
*
*$
*
*                (c)  2007 Zetex Semiconductors plc
*
*   The copyright in these models  and  the designs embodied belong
*   to Zetex Semiconductors plc (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Zetex, its distributors
*   or agents.
*
*   Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*---------- DMN2400UV Spice Model ----------
.SUBCKT DMN2400UV 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.1925 
RS 30 3 0.001 
RG 20 2 68 
CGS 2 3 3.272E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 6.7E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0.01  VTO = 0.9058 
+ TOX = 6E-008  NSUB = 1E+016  KP = 3.223  U0 = 400  KAPPA = 15.35 
.MODEL DCGD D  CJO = 1.94E-011  VJ = 0.1108  M = 0.3101 
.MODEL DSUB D  IS = 1E-009  N = 1.905  RS = 0.02633  BV = 25  CJO = 5.066E-012  VJ = 0.1753  M = 0.2672 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN2400UV Spice Model v1.0 Last Revised 2011/10/27


*---------- DMG1024UV Spice Model ----------
.SUBCKT DMG1024UV 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.2635 
RS 30 3 0.001 
RG 20 2 93 
CGS 2 3 5.63E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 6E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 4.147E+004  ETA = 0.00355  VTO = 0.9014 
+ TOX = 1.68E-008  NSUB = 3.755E+015  KP = 4.794  KAPPA = 1E-015  U0 = 4.441E-010 
.MODEL DCGD D  CJO = 2.806E-011  VJ = 0.04974  M = 0.2926 
.MODEL DSUB D  IS = 2.941E-010  N = 1.586  RS = 0.07503  BV = 22  CJO = 1.491E-011  VJ = 0.219  M = 0.277 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMG1024UV Spice Model v1.0 Last Revised 2010/10/4


*---------- DMN2004DMK Spice Model ----------
.SUBCKT DMN2004DMK 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.1925 
RS 30 3 0.001 
RG 20 2 68 
CGS 2 3 3.272E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 6.7E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0.01  VTO = 0.9058 
+ TOX = 6E-008  NSUB = 1E+016  KP = 3.223  U0 = 400  KAPPA = 15.35 
.MODEL DCGD D  CJO = 1.94E-011  VJ = 0.1108  M = 0.3101 
.MODEL DSUB D  IS = 1E-009  N = 1.905  RS = 0.02633  BV = 25  CJO = 5.066E-012  VJ = 0.1753  M = 0.2672 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN2004DMK Spice Model v1.0 Last Revised 2011/10/27


*---------- DMN2004DWK Spice Model ----------
.SUBCKT DMN2004DWK 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.1925 
RS 30 3 0.001 
RG 20 2 68 
CGS 2 3 3.272E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 6.7E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0.01  VTO = 0.9058 
+ TOX = 6E-008  NSUB = 1E+016  KP = 3.223  U0 = 400  KAPPA = 15.35 
.MODEL DCGD D  CJO = 1.94E-011  VJ = 0.1108  M = 0.3101 
.MODEL DSUB D  IS = 1E-009  N = 1.905  RS = 0.02633  BV = 25  CJO = 5.066E-012  VJ = 0.1753  M = 0.2672 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN2004DWK Spice Model v1.0 Last Revised 2011/10/27


*---------- DMN2004WK Spice Model ----------
.SUBCKT DMN2004WK 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.1925 
RS 30 3 0.001 
RG 20 2 68 
CGS 2 3 3.272E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 6.7E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0.01  VTO = 0.9058 
+ TOX = 6E-008  NSUB = 1E+016  KP = 3.223  U0 = 400  KAPPA = 15.35 
.MODEL DCGD D  CJO = 1.94E-011  VJ = 0.1108  M = 0.3101 
.MODEL DSUB D  IS = 1E-009  N = 1.905  RS = 0.02633  BV = 25  CJO = 5.066E-012  VJ = 0.1753  M = 0.2672 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN2004WK Spice Model v1.0 Last Revised 2011/10/27


*---------- DMN2040LTS Spice Model ----------
.SUBCKT DMN2040LTS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.01312 
RS 30 3 0.001002 
RG 20 2 1.37 
CGS 2 3 4.74E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 9E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8E+005  ETA = 0.0001  VTO = 1.023 
+ TOX = 6E-008  NSUB = 1.901E+016  KP = 50  KAPPA = 30.04  U0 = 400 
.MODEL DCGD D  CJO = 4.457E-010  VJ = 0.2472  M = 0.4558 
.MODEL DSUB D  IS = 2.93E-009  N = 1.251  RS = 0.02983  BV = 25  CJO = 3.405E-011  VJ = 0.2561  M = 0.4362 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN2040LTS Spice Model v1.0 Last Revised 2010/11/18


*---------- DMN26D0UT Spice Model ----------
.SUBCKT DMN26D0UT 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 1 
RS 30 3 0.001 
RG 20 2 1.37 
CGS 2 3 1.2E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 9E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 5.039E+004  ETA = 0.0001  VTO = 0.6781  
+TOX = 6E-008  NSUB = 1E+015  KP = 0.5796  KAPPA = 1E-015  U0 = 400 
.MODEL DCGD D  CJO = 5.649E-012  VJ = 0.1656  M = 0.2556 
.MODEL DSUB D  IS = 1E-006  N = 2.736  RS = 0.6505  BV = 22  CJO = 3.516E-012  VJ = 0.7721  M = 0.3577 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN26D0UT Spice Model v1.0 Last Revised 2011/1/10


*---------- DMN26D0UFB4 Spice Model ----------
.SUBCKT DMN26D0UFB4 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 1 
RS 30 3 0.001 
RG 20 2 1.37 
CGS 2 3 1.2E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 9E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 5.039E+004  ETA = 0.0001  VTO = 0.6781  
+TOX = 6E-008  NSUB = 1E+015  KP = 0.5796  KAPPA = 1E-015  U0 = 400 
.MODEL DCGD D  CJO = 5.649E-012  VJ = 0.1656  M = 0.2556 
.MODEL DSUB D  IS = 1E-006  N = 2.736  RS = 0.6505  BV = 22  CJO = 3.516E-012  VJ = 0.7721  M = 0.3577 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN26D0UFB4 Spice Model v1.0 Last Revised 2011/1/10


*---------- DMN26D0UDJ Spice Model ----------
.SUBCKT DMN26D0UDJ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 1 
RS 30 3 0.001 
RG 20 2 1.37 
CGS 2 3 1.2E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 9E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 5.039E+004  ETA = 0.0001  VTO = 0.6781  
+TOX = 6E-008  NSUB = 1E+015  KP = 0.5796  KAPPA = 1E-015  U0 = 400 
.MODEL DCGD D  CJO = 5.649E-012  VJ = 0.1656  M = 0.2556 
.MODEL DSUB D  IS = 1E-006  N = 2.736  RS = 0.6505  BV = 22  CJO = 3.516E-012  VJ = 0.7721  M = 0.3577 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMNDMN26D0UDJ Spice Model v1.0 Last Revised 2011/1/7


*---------- DMN2600UFB Spice Model ----------
.SUBCKT DMN2600UFB 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.3301 
RS 30 3 0.001 
RG 20 2 72.3 
CGS 2 3 6.524E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 1.15E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 6.963E+004  ETA = 1.444E-015  VTO = 0.9928 
+ TOX = 6E-008  NSUB = 1E+016  KP = 6.867  KAPPA = 0.41  U0 = 400 
.MODEL DCGD D  CJO = 2.395E-011  VJ = 0.07377  M = 0.279 
.MODEL DSUB D  IS = 1.816E-009  N = 1.387  RS = 0.2679  BV = 35  CJO = 5.814E-012  VJ = 0.1256  M = 0.2537 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN2600UFB Spice Model v1.0 Last Revised 2011/2/9


*---------- DMN2400UFB4 Spice Model ----------
.SUBCKT DMN2400UFB4 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.1925 
RS 30 3 0.001 
RG 20 2 68 
CGS 2 3 3.272E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 6.7E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0.01  VTO = 0.9058 
+ TOX = 6E-008  NSUB = 1E+016  KP = 3.223  U0 = 400  KAPPA = 15.35 
.MODEL DCGD D  CJO = 1.94E-011  VJ = 0.1108  M = 0.3101 
.MODEL DSUB D  IS = 1E-009  N = 1.905  RS = 0.02633  BV = 25  CJO = 5.066E-012  VJ = 0.1753  M = 0.2672 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN2400UFB4 Spice Model v1.0 Last Revised 2011/10/27


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=24JAN2011
*VERSION=1
*PIN_ORDER         
*1=S1
*2=G1
*3=S2
*4=G2
*5=D2
*6=D2
*7=D1
*8=D1
*
.SUBCKT ZXMN2AMC 1 2 3 4 5 6 7 8
*Dev1 N-channel
M11 11 12 13 13 Nmod1 L=1.16E-6 W=0.46
M12 13 12 13 11 Pmod1 L=1.3E-6 W=0.22
RG11 2 16 5
RIN11 12 13 1E12
RD11 11 15 Rmod11 0.036
RS11 13 14 1E-6
RL11 13 15 3E9
C11 12 13 8.5E-12
C12 12 15 3E-12
Egt11 16 12 17 13 1
Vgt11 13 18 1
Igt11 13 17 1
Rgt11 17 18 Rmod12 1
D11 13 15  Dmod1
RP11 15 7 1E-6
RP12 15 8 1E-6
LS11 14 1 1.2E-9
*Dev2 N-channel
M21 21 22 23 23 Nmod1 L=1.16E-6 W=0.46
M22 23 22 23 21 Pmod1 L=1.3E-6 W=0.22
RG21 4 26 5
RIN21 22 23 1E12
RD21 21 25 Rmod11 0.036
RS21 23 24 1E-6
RL21 23 25 3E9
C21 22 23 8.5E-12
C22 22 25 3E-12
Egt21 26 22 27 23 1
Vgt21 23 28 1
Igt21 23 27 1
Rgt21 27 28 Rmod12 1
D21 23 25  Dmod1
RP21 25 5 1E-6
RP22 25 6 1E-6
LS21 24 3 1.2E-9
.MODEL Nmod1 NMOS (LEVEL=3 TOX=4.5E-8 NSUB=3.5E16 VTO=1.31
+KP=4E-5 RS=.03 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10)
.MODEL Pmod1 PMOS (LEVEL=3 TOX=4.5E-8 NSUB=3.3E16
+TPG=-1 IS=1E-15 N=10)
.MODEL Dmod1 D (IS=5E-12 RS=.025 IKF=0.1 TRS1=1.5e-3
+CJO=230e-12  BV=23)
.MODEL Rmod11 RES (TC1=5.8e-3 TC2=1.3E-5)
.MODEL Rmod12 RES (TC1=-3e-4 TC2=0)
.ENDS
*
*$


*---------- DMG5802LFX Spice Model ----------
.SUBCKT DMG5802LFX 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.01074 
RS 30 3 0.001 
RG 20 2 1.47 
CGS 2 3 9.956E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 1.9E-009 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 3.802E+005  ETA = 1E-006  VTO = 1.016 
+ TOX = 6E-008  NSUB = 1E+016  KP = 94.75  KAPPA = 7.017  U0 = 400 
.MODEL DCGD D  CJO = 6.156E-010  VJ = 0.1767  M = 0.3617 
.MODEL DSUB D  IS = 1.268E-009  N = 1.142  RS = 0.02111  BV = 30  CJO = 7.957E-011  VJ = 0.3347  M = 0.4933 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMG5802LFX Spice Model v1.0 Last Revised 2011/6/27


*DIODES_INC_SPICE_MODEL DMN2300UFB4 N-channel MOSFET
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=30JUL2012
*VERSION=2

.SUBCKT DMN2300UFB4 10 20 30
M1 1 2 3 3  Nmod1
RD 10 1 Rmod1 130E-3
RS 23 3 Rmod1 10E-3
RG 20 22 50
RIN 20 23 2E11
RDS 10 23 6E9
CGS 2 3 140E-12 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 140E-12 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 23 10  DSUB
EL 2 22 1 3 0.022
LS  30 23  1n
.MODEL Nmod1 NMOS (LEVEL=3 VTO=.9095 TOX=5.8E-8 NSUB=1E+17 KP=11.5 NFS=.5E+10 IS=1E-15 N=10)
.MODEL DCGD D (CJO =30E-12  VJ = 0.5  M = 0.43 T_ABS=25)
.MODEL DSUB D (IS = 1E-13 N=1.19 RS=0.06 BV=22 CJO=330E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=2E-3)
.MODEL DLIM D (IS=100U N=1 T_ABS=25)
.MODEL Rmod1 RES (TC1=6e-3 TC2=12E-6)
.ENDS

.SIMULATOR DEFAULT


*---------- DMN2990UDJ Spice Model ----------
.SUBCKT DMN2990UDJ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.3743 
RS 30 3 0.001 
RG 20 2 113 
CGS 2 3 2.5E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 8E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0.01  VTO = 0.8716 
+ TOX = 6E-008  NSUB = 1.886E+016  KP = 2.108  U0 = 400  KAPPA = 10.7 
.MODEL DCGD D  CJO = 1.594E-011  VJ = 0.2646  M = 0.429 
.MODEL DSUB D  IS = 2.265E-009  N = 1.422  RS = 1.834  BV = 25  CJO = 2.7E-012  VJ = 0.2048  M = 0.1841 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN2990UDJ Spice Model v1.0 Last Revised 2011/8/12


*---------- DMN2075UDW Spice Model ----------
.SUBCKT DMN2075UDW 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.03596 
RS 30 3 0.001 
RG 20 2 1.5 
CGS 2 3 5.381E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 7E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9505 
+ TOX = 6E-008 NSUB = 1E+016 KP = 55.47 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 3.128E-010 VJ = 0.6 M = 0.6001 
.MODEL DSUB D IS = 4.456E-010 N = 1.107 RS = 0.06698 BV = 22 CJO = 1E-015 VJ = 0.6 M = 0.7957 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN2075UDW Spice Model v1.0M Last Revised 2016/4/7


*DIODES_INC_SPICE_MODEL DMN2065UW
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=17Apr2013
*VERSION=1
*PINS 10=D 20=G 30=S



.SUBCKT DMN2065UW   10 20 30
M1 1 2 3 3  Nmod1
RD 10 1 Rmod1 33E-3
RS 23 3 Rmod1 15E-3
RG 20 22 8
RIN 20 23 2E11
RDS 10 23 2E9
CGS 2 3 220E-12 
EGD 12 0 2 1 1
*REGD 12 0 1
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 760E-12 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 23 10 DSUB
EL 2 22 1 3 .003
RL 30 23 3
LS  30 23 2E-9
.MODEL Nmod1 NMOS (LEVEL=3 VTO=.92 TOX=4.5E-8 NSUB=1E+16 KP=75 NFS=1E+11 IS=1E-15 N=10)
.MODEL DCGD D (CJO = 180E-12  VJ = 0.45  M = 0.33 T_ABS=25)
.MODEL DSUB D (IS=.1E-12 N=1.02 RS=0.06 BV=22 CJO=94E-12 VJ=0.45 M=0.33 TT=3E-9)
.MODEL DLIM D (IS=100U N=1 T_ABS=25)
.MODEL Rmod1 RES (TC1=1e-3 TC2=1E-6)
.ENDS

.SIMULATOR DEFAULT


*                (c)  2013 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*---------- DMN21D2UFB Spice Model ----------
.SUBCKT DMN21D2UFB 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.3846 
RS 30 3 0.001 
RG 20 2 200 
CGS 2 3 2.452E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 6.7E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.9675 
+ TOX = 6E-008 NSUB = 1E+016 KP = 2.2 U0 = 400 KAPPA = 38 
.MODEL DCGD D CJO = 1.4E-011 VJ = 0.207 M = 0.3876 
.MODEL DSUB D IS = 2.291E-010 N = 1.262 RS = 1.472 
+ BV = 65 CJO = 3.241E-012 VJ = 0.2008 M = 0.2 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN21D2UFB Spice Model v1.0 Last Revised 2012/5/3


*---------- DMN1019UFDE Spice Model ----------
.SUBCKT DMN1019UFDE 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.003695 
RS 30 3 0.001 
RG 20 2 1.12 
DESD1 2 5 DESD 
DESD2 3 5 DESD 
CGS 2 3 2.085E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 3.8E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001248 VTO = 0.9106 
+ TOX = 6E-008 NSUB = 1E+016 KP = 208.4 U0 = 400 KAPPA = 94.25 
.MODEL DCGD D CJO = 1.867E-009 VJ = 0.2465 M = 0.4333 
.MODEL DSUB D IS = 2.007E-009 N = 1.095 RS = 0.01324 
+ BV = 20 CJO = 5.112E-012 VJ = 6.535E-009 M = 0.00671 
.MODEL DLIM D IS = 0.0001 
.MODEL DESD D IS = 1.223E-008 N = 54.81 BV = 5.381 
.ENDS
*Diodes DMN1019UFDE Spice Model v1.0 Last Revised 2014/4/03


*DIODES_INC_SPICE_MODEL DMN2013UFDE
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=31Mar2104
*VERSION=1
*PINS 10=D 20=G 30=S


.SUBCKT DMN2013UFDE   10 20 30
M1 1 2 3 3  Nmod1
RD 10 1 Rmod1 4E-3
RS 23 3 Rmod1 3E-3
RG 20 22 1.2
RIN 20 23 2E11
RDS 10 23 2E9
CGS 2 3 1200E-12 
EGD 12 0 2 1 1
*REGD 12 0 1
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1900E-12 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 23 10 DSUB
EL 2 22 1 3 .005
RL 30 23 3
LS  30 23 2E-9
.MODEL Nmod1 NMOS (LEVEL=3 VTO=.9 TOX=4.5E-8 NSUB=1E+16 KP=190 NFS=1E+11 IS=1E-15 N=10)
.MODEL DCGD D (CJO = 180E-12  VJ = 0.45  M = 0.33 T_ABS=25)
.MODEL DSUB D (IS=200E-12 N=1 RS=0.0128 BV=22 CJO=94E-12 VJ=0.45 M=0.33 TT=3E-9)
.MODEL DLIM D (IS=100U N=1 T_ABS=25)
.MODEL Rmod1 RES (TC1=.3e-3 TC2=1E-6)
.ENDS


*                     (c)  2014 Diodes Inc
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*



*---------- DMN2990UFA Spice Model ----------

*NMOS
.SUBCKT DMN2990UFA 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.3743 
RS 30 3 0.001 
RG 20 2 113 
CGS 2 3 2.5E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 8E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0.01  VTO = 0.8716 
+ TOX = 6E-008  NSUB = 1.886E+016  KP = 2.108  U0 = 400  KAPPA = 10.7 
.MODEL DCGD D  CJO = 1.594E-011  VJ = 0.2646  M = 0.429 
.MODEL DSUB D  IS = 2.265E-009  N = 1.422  RS = 1.834  BV = 25  CJO = 2.7E-012  VJ = 0.2048  M = 0.1841 
.MODEL DLIM D  IS = 0.0001 
.ENDS


*Diodes DMN2990UFA Spice Model v1.0 Last Revised 2012/11/30


*---------- DMN2400UFD Spice Model ----------
.SUBCKT DMN2400UFD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.1925 
RS 30 3 0.001 
RG 20 2 68 
CGS 2 3 3.272E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 6.7E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0.01  VTO = 0.9058 
+ TOX = 6E-008  NSUB = 1E+016  KP = 3.223  U0 = 400  KAPPA = 15.35 
.MODEL DCGD D  CJO = 1.94E-011  VJ = 0.1108  M = 0.3101 
.MODEL DSUB D  IS = 1E-009  N = 1.905  RS = 0.02633  BV = 25  CJO = 5.066E-012  VJ = 0.1753  M = 0.2672 
.MODEL DLIM D  IS = 0.0001 
.ENDS

*Diodes DMN2400UFD Spice Model v1.0 Last Revised 2012/11/28


*---------- DMN1033UCB4 Spice Model ----------
.SUBCKT DMN1033UCB4 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01433 
RS 30 3 0.001 
RG 20 2 0.98 
CGS 2 3 2.151E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.6971 
+ TOX = 6E-008 NSUB = 1E+016 KP = 88.11 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.2E-009 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 3.509E-009 N = 1.028 RS = 0.05865 BV = 10 CJO = 1E-015 VJ = 0.6 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN1033UCB4 Spice Model v1.0 Last Revised 2015/10/21


*---------- DMN2011UFDE Spice Model ----------
.SUBCKT DMN2011UFDE 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.0032 
RS 30 3 0.001 
RG 20 2 1.49 
CGS 2 3 1.99E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 3.25E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.95 
+ TOX = 6E-008 NSUB = 1E+016 KP = 184 U0 = 400 KAPPA = 80 
.MODEL DCGD D CJO = 1.288E-009 VJ = 0.6701 M = 0.6 
.MODEL DSUB D IS = 3.806E-009 N = 1.128 RS = 0.007 
+ BV = 30 CJO = 1.91E-010 VJ = 1E-015 M = 0.03576 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN2011UFDE Spice Model v1.0 Last Revised 2014/9/11


*---------- DMN1025UFDB Spice Model ----------
.SUBCKT DMN1025UFDB 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01123 
RS 30 3 0.001 
RG 20 2 11.46 
CGS 2 3 8.145E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.95E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.698 
+ TOX = 6E-008 NSUB = 1E+016 KP = 68.44 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 4.104E-010 VJ = 0.6 M = 0.6 
.MODEL DSUB D IS = 4.939E-009 N = 1.071 RS = 0.06849 BV = 10 CJO = 1E-015 VJ = 0.6 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN1025UFDB Spice Model v1.0 Last Revised 2015/10/21



*---------- DMN1032UCB4 Spice Model ----------
.SUBCKT DMN1032UCB4 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.001 
RS 30 3 0.01537 
RG 20 2 3 
CGS 2 3 2.965E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 4.05E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8E+005  ETA = 0.001  VTO = 0.8636 
+ TOX = 6E-008  NSUB = 1E+016  KP = 72.73  U0 = 400  KAPPA = 49.24 
.MODEL DCGD D  CJO = 8.344E-011  VJ = 0.6  M = 0.407 
.MODEL DSUB D  IS = 1.684E-010  N = 1.089  RS = 0.01698  BV = 15  CJO = 2.507E-010  VJ = 0.6381  M = 0.2149 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN1032UCB4 Spice Model v1.0 Last Revised 2014/4/30


*---------- DMN2023UCB4 Spice Model ----------
.SUBCKT DMN2023UCB4 20 30 40 50 
*     TERMINALS:   G1 S1 G2 S2
X1 10 20 30 Single
X2 10 40 50 Single
.ENDS

*single channel 
.SUBCKT Single 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.007802 
RS 30 3 0.001 
RG 20 2 1 
CGS 2 3 2.306E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 4.5E-009 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8E+005  ETA = 0.001  VTO = 0.9022 
+ TOX = 6E-008  NSUB = 1E+016  KP = 202.3  U0 = 400  KAPPA = 1 
.MODEL DCGD D  CJO = 9.462E-010  VJ = 1  M = 0.7 
.MODEL DSUB D  IS = 3.451E-008  N = 4.441E-010  RS = 1.473  BV = 65  CJO = 1.058E-011  VJ = 1  M = 0.7 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN2023UCB4 Spice Model v1.0 Last Revised 2015/1/5


*---------- DMN2046U Spice Model ----------
.SUBCKT DMN2046U 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.0283 
RS 30 3 0.001 
RG 20 2 62.39 
CGS 2 3 2.599E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 4.5E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8493 
+ TOX = 6E-008 NSUB = 1E+016 KP = 26.84 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.821E-010 VJ = 0.6 M = 0.6077 
.MODEL DSUB D IS = 9.26E-009 N = 1.865 RS = 0.007806 BV = 20 CJO = 2.22E-010 VJ = 0.6 M = 0.7301 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN2046U Spice Model v1.0 Last Revised 2015/12/10


*---------- DMN1016UCB6 Spice Model ----------
.SUBCKT DMN1016UCB6 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.01495 
RS 30 3 1E-008 
RG 20 2 3 
CGS 2 3 2.491E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 6.5E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8E+005  ETA = 0.001  VTO = 0.8702 
+ TOX = 6E-008  NSUB = 1E+016  KP = 65.71  U0 = 400  KAPPA = 4.441E-010 
.MODEL DCGD D  CJO = 1.5E-010  VJ = 0.8  M = 0.3 
.MODEL DSUB D  IS = 2.294E-010  N = 1.129  RS = 0.0324  BV = 20  CJO = 3.378E-010  VJ = 0.8  M = 0.6 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN1016UCB6  Spice Model v1.0 Last Revised 2015/7/22


*---------- DMN1054UCB4 Spice Model ----------
.SUBCKT DMN1054UCB4 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.02848 
RS 30 3 0.007857 
RG 20 2 1.16 
CGS 2 3 5.054E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 9.75E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8E+005  ETA = 0.001  VTO = 0.8543 
+ TOX = 6E-008  NSUB = 1E+016  KP = 113.6  U0 = 400  KAPPA = 1 
.MODEL DCGD D  CJO = 4.172E-010  VJ = 0.6  M = 0.6531 
.MODEL DSUB D  IS = 1.997E-008  N = 1.295  RS = 0.1266  BV = 15  CJO = 1.714E-012  VJ = 0.6607  M = 0.6958 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN1054UCB4 Spice Model v1.0 Last Revised 2015/1/23


*---------- DMN2005UPS Spice Model ----------
.SUBCKT DMN2005UPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001735 
RS 30 3 1E-006 
RG 20 2 0.73 
CGS 2 3 4.893E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 8.203E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.8495 
+ TOX = 6E-008 NSUB = 1E+016 KP = 404.4 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 3.312E-009 VJ = 0.1775 M = 0.4588 
.MODEL DSUB D IS = 7.261E-009 N = 1.052 RS = 0.006412 BV = 28 CJO = 5.538E-010 VJ = 0.3369 M = 0.6764 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN2005UPS  Spice Model v1.0 Last Revised 2015/7/20


*---------- DMN2010UDZ Spice Model ----------
.SUBCKT DMN2010UDZ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.004472 
RS 30 3 0.0001699 
RG 20 2 1.09 
CGS 2 3 2.367E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 4.5E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 
+ DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.8879 
+ TOX = 6E-008 NSUB = 1E+016 KP = 350.3 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 1.902E-009 VJ = 0.3 M = 0.5 
.MODEL DSUB D IS = 9.653E-009 N = 1.119 RS = 0.01253 BV = 26 CJO = 2.221E-010 VJ = 0.5 M = 0.5766 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN2010UDZ Spice Model v1.0 Last Revised 2015/6/6



*---------- DMN2027UPS Spice Model ----------
.SUBCKT DMN2027UPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.007309 
RS 30 3 1E-008 
RG 20 2 1.5 
CGS 2 3 9.632E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 1.095E-009 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8E+005  ETA = 0.001  VTO = 1.335 
+ TOX = 6E-008  NSUB = 1E+016  KP = 107.7  U0 = 400  KAPPA = 4.441E-010 
.MODEL DCGD D  CJO = 6.082E-010  VJ = 0.6  M = 0.5 
.MODEL DSUB D  IS = 3.253E-010  N = 1.168  RS = 0.01176  BV = 28  CJO = 2.221E-010  VJ = 0.6  M = 0.6492 
.MODEL DLIM D  IS = 0.0001 
.ENDS

*Diodes DMN2027UPS  Spice Model v1.0 Last Revised 2015/7/27


*---------- DMN2022UNS Spice Model ----------
.SUBCKT DMN2022UNS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.007593 
RS 30 3 0.001 
RG 20 2 95.7 
CGS 2 3 1.702E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.7E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9482 
+ TOX = 6E-008 NSUB = 1E+016 KP = 146.6 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 8.774E-010 VJ = 0.6 M = 0.6 
.MODEL DSUB D IS = 1.408E-008 N = 1.274 RS = 0.01256 BV = 20 CJO = 5.835E-010 VJ = 0.8 M = 0.6 TT=1.49E-7
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN2022UNS Spice Model v1.0 Last Revised 2015/11/2


*---------- DMN1250UFEL Spice Model ----------
.SUBCKT DMN1250UFEL 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.1663 
RS 30 3 1E-008 
RG 20 2 2.35 
CGS 2 3 1.394E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 1.48E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8E+005  ETA = 0.001  VTO = 0.9121 
+ TOX = 6E-008  NSUB = 1E+016  KP = 2.576  U0 = 400  KAPPA = 4.441E-010 
.MODEL DCGD D  CJO = 1.178E-011  VJ = 0.7572  M = 0.2141 
.MODEL DSUB D  IS = 2.68E-010  N = 1.331  RS = 0.6651  BV = 15  CJO = 5.599E-012  VJ = 0.8  M = 0.6 
.MODEL DLIM D  IS = 0.0001 
.ENDS

*Diodes DMN1250UFEL  Spice Model v1.0 Last Revised 2015/7/29


*---------- DMN2230UQ Spice Model ----------
.SUBCKT DMN2230UQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.05454 
RS 30 3 0.001 
RG 20 2 59.7 
CGS 2 3 1.5E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.55E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9509 
+ TOX = 6E-008 NSUB = 1E+016 KP = 15.65 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.13E-010 VJ = 0.6 M = 0.6 
.MODEL DSUB D IS = 2.851E-009 N = 1.329 RS = 0.1207 BV = 20 CJO = 2.22E-010 VJ = 0.6 M = 0.7957 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN2230UQ Spice Model v1.0 Last Revised 2016/01/11


*---------- DMG2302UK Spice Model ----------
.SUBCKT DMG2302UK 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.02745 
RS 30 3 0.001 
RG 20 2 2.64 
CGS 2 3 1E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.55E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.6118 
+ TOX = 6E-008 NSUB = 1E+016 KP = 11.46 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 7.358E-011 VJ = 0.7999 M = 0.6 
.MODEL DSUB D IS = 4.844E-007 N = 1.983 RS = 0.05975 BV = 20 CJO = 8E-011 VJ = 0.6 M = 0.7957 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMG2302UK Spice Model v1.0 Last Revised 2016/1/22


*---------- DMN2008LFU Spice Model ----------
.SUBCKT DMN2008LFU 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 6.043E-005 
RS 30 3 0.001 
RG 20 2 465 
CGS 2 3 1.308E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.7E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9748 
+ TOX = 6E-008 NSUB = 1E+016 KP = 78.89 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 5.312E-010 VJ = 0.6606 M = 0.6 
.MODEL DSUB D IS = 1.156E-009 N = 1.088 RS = 0.007059 BV = 26 CJO = 7.728E-010 VJ = 0.8 M = 0.6 TT=2.5E-07
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN2008LFU Spice Model v1.0M Last Revised 2016/5/5


*---------- DMN1150UFL3 Spice Model ----------
.SUBCKT DMN1150UFL3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.05481 
RS 30 3 0.001 
RG 20 2 90 
CGS 2 3 6.366E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.707E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.7353 
+ TOX = 6E-008 NSUB = 1E+016 KP = 11.2 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 2.627E-010 VJ = 1 M = 0.9231 
.MODEL DSUB D IS = 1.294E-009 N = 1.166 RS = 0.4831 BV = 16.8 CJO = 1.444E-015 VJ = 0.1 M = 0.9578 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN1150UFL3  Spice Model v1.0 Last Revised 2015/04/13


*---------- DMN2500UFB4 Spice Model ----------
.SUBCKT DMN2500UFB4 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.2263 
RS 30 3 0.001 
RG 20 2 92.87 
CGS 2 3 5.5E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8822 TOX = 6E-008 NSUB = 1E+016 KP = 5.422 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 2.566E-011 VJ = 0.1 M = 0.3169 
.MODEL DSUB D IS = 1.051E-009 N = 1.807 RS = 4.441E-010 BV = 26 CJO = 1.5E-011 VJ = 0.6 M = 0.6917 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN2500UFB4 Spice Model v1.0M Last Revised 2016/6/30



*---------- DMT2004UFDF Spice Model ----------
.SUBCKT DMT2004UFDF 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.002012 
RS 30 3 0.001 
RG 20 2 1.55 
CGS 2 3 1.143E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 3.1E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.135 
+ TOX = 6E-008 NSUB = 1E+016 KP = 163.9 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.542E-009 VJ = 0.8 M = 0.3454 
.MODEL DSUB D IS = 3.534E-009 N = 1.214 RS = 0.007301 BV = 27 CJO = 2.538E-010 VJ = 0.9 M = 0.7644 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT2004UFDF Spice Model v1.0M Last Revised 2016/6/30



*---------- DMN2004DWKQ Spice Model ----------
.SUBCKT DMN2004DWKQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.1925 
RS 30 3 0.001 
RG 20 2 68 
CGS 2 3 3.272E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 6.7E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0.01  VTO = 0.9058 
+ TOX = 6E-008  NSUB = 1E+016  KP = 3.223  U0 = 400  KAPPA = 15.35 
.MODEL DCGD D  CJO = 1.94E-011  VJ = 0.1108  M = 0.3101 
.MODEL DSUB D  IS = 1E-009  N = 1.905  RS = 0.02633  BV = 25  CJO = 5.066E-012  VJ = 0.1753  M = 0.2672 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN2004DWKQ Spice Model v1.0M Last Revised 2016/4/14


*---------- ZXMN2F30FHQ Spice Model ----------
.SUBCKT ZXMN2F30FHQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.02158 
RS 30 3 0.001 
RG 20 2 1.53 
CGS 2 3 3.785E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 6.25E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0.009674  VTO = 1.32 
+ TOX = 6E-008  NSUB = 1E+016  KP = 53.82  KAPPA = 1E-015  U0 = 400 
.MODEL DCGD D  CJO = 3.069E-010  VJ = 0.1752  M = 0.4052 
.MODEL DSUB D  IS = 8.863E-010  N = 1.372  RS = 0.01813  BV = 22  CJO = 4.022E-011  VJ = 0.2305  M = 0.4418 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes ZXMN2F30FHQ Spice Model v1.0 Last Revised 2016/7/22


*---------- DMN2011UFDF Spice Model ----------
.SUBCKT DMN2011UFDF 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.0032 
RS 30 3 0.001 
RG 20 2 1.49 
CGS 2 3 1.99E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 3.25E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.95 
+ TOX = 6E-008 NSUB = 1E+016 KP = 184 U0 = 400 KAPPA = 80 
.MODEL DCGD D CJO = 1.288E-009 VJ = 0.6701 M = 0.6 
.MODEL DSUB D IS = 3.806E-009 N = 1.128 RS = 0.007 
+ BV = 30 CJO = 1.91E-010 VJ = 1E-015 M = 0.03576 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN2011UFDF Spice Model v1.0 Last Revised 2014/9/11



*---------- DMN2058U Spice Model ----------
.SUBCKT DMN2058U 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01969 
RS 30 3 0.001 
RG 20 2 3.1 
CGS 2 3 2.453E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 4.6E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7391 
+ TOX = 6E-008 NSUB = 1E+016 KP = 34.05 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 2.179E-010 VJ = 0.2219 M = 0.4485 
.MODEL DSUB D IS = 5.374E-009 N = 1.272 RS = 0.06325 BV = 26 CJO = 2.226E-010 VJ = 0.113 M = 0.6916 TT=2.7E-09
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN2058U Spice Model v1.0M Last Revised 2016/6/15


*---------- DMN2056U Spice Model ----------
.SUBCKT DMN2056U 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01796 
RS 30 3 0.001 
RG 20 2 2.6 
CGS 2 3 3.089E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5.8E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7861 
+ TOX = 6E-008 NSUB = 1E+016 KP = 44.43 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.836E-010 VJ = 0.1383 M = 0.3956 
.MODEL DSUB D IS = 9.074E-010 N = 1.126 RS = 0.07299 BV = 25 CJO = 2.226E-010 VJ = 0.113 M = 0.6916 TT=2.3E-09
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN2056U Spice Model v1.0M Last Revised 2016/6/15


*---------- DMN2004WKQ Spice Model ----------
.SUBCKT DMN2004WKQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.1925 
RS 30 3 0.001 
RG 20 2 68 
CGS 2 3 3.272E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 6.7E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0.01  VTO = 0.9058 
+ TOX = 6E-008  NSUB = 1E+016  KP = 3.223  U0 = 400  KAPPA = 15.35 
.MODEL DCGD D  CJO = 1.94E-011  VJ = 0.1108  M = 0.3101 
.MODEL DSUB D  IS = 1E-009  N = 1.905  RS = 0.02633  BV = 25  CJO = 5.066E-012  VJ = 0.1753  M = 0.2672 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN2004WKQ Spice Model v1.0 Last Revised 2016/9/21


*---------- DMT2004UPS Spice Model ----------
.SUBCKT DMT2004UPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.002012 
RS 30 3 0.001 
RG 20 2 1.55 
CGS 2 3 1.143E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 3.1E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.135 
+ TOX = 6E-008 NSUB = 1E+016 KP = 163.9 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.542E-009 VJ = 0.8 M = 0.3454 
.MODEL DSUB D IS = 3.534E-009 N = 1.214 RS = 0.007301 BV = 27 CJO = 2.538E-010 VJ = 0.9 M = 0.7644 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT2004UPS Spice Model v1.0M Last Revised 2016/6/30



*---------- DMT2004UFG Spice Model ----------
.SUBCKT DMT2004UFG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.002012 
RS 30 3 0.001 
RG 20 2 1.55 
CGS 2 3 1.143E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 3.1E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.135 
+ TOX = 6E-008 NSUB = 1E+016 KP = 163.9 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.542E-009 VJ = 0.8 M = 0.3454 
.MODEL DSUB D IS = 3.534E-009 N = 1.214 RS = 0.007301 BV = 27 CJO = 2.538E-010 VJ = 0.9 M = 0.7644 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT2004UFG Spice Model v1.0M Last Revised 2016/6/30



*---------- DMG3414UQ Spice Model ----------
.SUBCKT DMG3414UQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.01338 
RS 30 3 1E-003
RG 20 2 18 
CGS 2 3 7.702E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 1.1E-009 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 5.027E-008  VTO = 0.8394  
+ TOX = 6E-008  NSUB = 1E+016  KP = 46.34  KAPPA = 1E-015  U0 = 400 
.MODEL DCGD D  CJO = 4.457E-010  VJ = 0.2472  M = 0.4558 
.MODEL DSUB D  IS = 4.271E-010  N = 1.076  RS = 0.05217  BV = 25  CJO = 3.405E-011  VJ = 0.2561  M = 0.4362 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMG3414UQ Spice Model v1.0 Last Revised 2016/9/26


*ZETEX ZVN2106A Spice Model v1.2 Last Revised 6/4/01
    *
    .SUBCKT ZVN2106A 3 4 5
    *------connections-------D-G-S
    M1 6 2 8 8 N2106AM
    M2 6 2 8 8 N2106AMS
    RG 4 2 15
    RD 3 6 0.25
    RS 8 5 0.94 
    RL 3 5 100E6
    C1 2 8 37E-12
    C2 2 3  20E-12
    C3 15 14 85E-12 
    C4 16 8 87E-12
    D1 5 3 N2106AD
    S1 2 15 13 14 SMOD1
    S2 13 15 14 13 SMOD1
    S3 16 13 13 8 SMOD2
    S4 16 2 8 13 SMOD2
    Egs2 13 8 2 8 1
    Eds1 14 8 3 8 1
    .MODEL N2106AM NMOS VTO=1.6 IS=1E-15 KP=0.67
    +CBD=50E-12 PB=1
    .MODEL N2106AMS NMOS VTO=.98 IS=1E-15 KP=0.006 PB=1
    .MODEL N2106AD D IS=5.516E-13 RS=.2084 N=1.0078
    .MODEL SMOD1 VSWITCH RON=.001 ROFF=100  VON=3.5 VOFF=2.5
    .MODEL SMOD2 VSWITCH RON=.001 ROFF=100  VON=-5 VOFF=-6
    .ENDS ZVN2106A
    *
    *$
    *


*ZETEX ZVN2106G Spice Model v1.2 Last Revised 6/4/01
    *
    .SUBCKT ZVN2106G 3 4 5
    *------connections-------D-G-S
    M1 6 2 8 8 N2106AM
    M2 6 2 8 8 N2106AMS
    RG 4 2 15
    RD 3 6 0.25
    RS 8 5 0.94 
    RL 3 5 100E6
    C1 2 8 37E-12
    C2 2 3  20E-12
    C3 15 14 85E-12 
    C4 16 8 87E-12
    D1 5 3 N2106AD
    S1 2 15 13 14 SMOD1
    S2 13 15 14 13 SMOD1
    S3 16 13 13 8 SMOD2
    S4 16 2 8 13 SMOD2
    Egs2 13 8 2 8 1
    Eds1 14 8 3 8 1
    .MODEL N2106AM NMOS VTO=1.6 IS=1E-15 KP=0.67
    +CBD=50E-12 PB=1
    .MODEL N2106AMS NMOS VTO=.98 IS=1E-15 KP=0.006 PB=1
    .MODEL N2106AD D IS=5.516E-13 RS=.2084 N=1.0078
    .MODEL SMOD1 VSWITCH RON=.001 ROFF=100  VON=3.5 VOFF=2.5
    .MODEL SMOD2 VSWITCH RON=.001 ROFF=100  VON=-5 VOFF=-6
    .ENDS ZVN2106G
    *
    *$
    *


*ZETEX ZVN3306A Spice Model v1.1 Last Revised 3/5/00
    *
    .SUBCKT ZVN3306A 3 4 5
    *                D G S
    M1 3 2 5 5 N3306M
    RG 4 2 270
    RL 3 5 1.2E8
    C1 2 5 28E-12
    C2 3 2 3E-12 
    D1 5 3 N3306D
    *
    .MODEL N3306M NMOS VTO=1.824 RS=1.572 RD=1.436 IS=1E-15 KP=.1233
    +CBD=35E-12 PB=1
    .MODEL N3306D D IS=5E-12 RS=.768
    .ENDS ZVN3306A
    *
    *$
    *


*ZETEX ZVN3306F Spice Model v1.1 Last Revised 3/5/00
    *
    .SUBCKT ZVN3306F 3 4 5
    *                D G S
    M1 3 2 5 5 N3306M
    RG 4 2 270
    RL 3 5 1.2E8
    C1 2 5 28E-12
    C2 3 2 3E-12 
    D1 5 3 N3306D
    *
    .MODEL N3306M NMOS VTO=1.824 RS=1.572 RD=1.436 IS=1E-15 KP=.1233
    +CBD=35E-12 PB=1
    .MODEL N3306D D IS=5E-12 RS=.768
    .ENDS ZVN3306F
    *
    *$
    *


*ZETEX ZVN4106F Spice Model v1.1 Last Revised 3/5/00
    *
    .SUBCKT ZVN4106F 3 4 5
    * Nodes          D G S
    M1 3 2 5 5 MOD1
    RG 4 2 343
    RL 3 5 6E6
    C1 2 5 23.5P
    C2 3 2 4.5P 
    D1 5 3 DIODE1
    *
    .MODEL MOD1 NMOS VTO=2.474 RS=1.68 RD=0.0 IS=1E-15 KP=0.296
    +CBD=53.5P PB=1 LAMBDA=267E-6
    .MODEL DIODE1 D IS=1.254E-13 N=1.0207 RS=0.222
    .ENDS ZVN4106F
    *
    *$
    *


*ZETEX ZVN4206A Spice Model v1.0 Last Revised 30/01/02
    *
    .SUBCKT ZVN4206A 3 4 5
    *------connections-------D-G-S
    M1 6 2 8 8 MOSMOD
    M2 6 2 8 8 MOSMODS
    RG 4 2 30
    RD 3 6 0.05
    RS 8 5 0.5 
    RL 3 5 6E6
    C1 2 8 80E-12
    C2 2 3 25E-12
    C3 15 14 75E-12 
    C4 16 8 40E-12
    D1 5 3 DMOD
    S1 2 15 14 13 SMOD1
    S2 13 15 13 14 SMOD1
    S3 16 13 13 8 SMOD2
    S4 16 2 8 13 SMOD2
    Egs2 13 8 2 8 1
    Eds1 14 8 3 8 1
    .MODEL MOSMOD NMOS VTO=2.4 IS=1E-15 KP=0.84 CBD=195E-12 PB=1
    .MODEL MOSMODS NMOS VTO=1.8 IS=1E-15 KP=0.084 PB=1
    .MODEL DMOD D IS=6E-13 RS=.13 N=1.01
    .MODEL SMOD1 VSWITCH RON=.1 ROFF=1E5  VON=1.5 VOFF=4.5
    .MODEL SMOD2 VSWITCH RON=.1 ROFF=1E5  VON=-5 VOFF=-6
    .ENDS  ZVN4206A
    *
    *$
    *


*ZETEX ZVN4206AV Spice Model v1.0 Last Revised 30/01/02
    *
    .SUBCKT ZVN4206AV 3 4 5
    *------connections-------D-G-S
    M1 6 2 8 8 MOSMOD
    M2 6 2 8 8 MOSMODS
    RG 4 2 30
    RD 3 6 0.05
    RS 8 5 0.5 
    RL 3 5 6E6
    C1 2 8 80E-12
    C2 2 3 25E-12
    C3 15 14 75E-12 
    C4 16 8 40E-12
    D1 5 3 DMOD
    S1 2 15 14 13 SMOD1
    S2 13 15 13 14 SMOD1
    S3 16 13 13 8 SMOD2
    S4 16 2 8 13 SMOD2
    Egs2 13 8 2 8 1
    Eds1 14 8 3 8 1
    .MODEL MOSMOD NMOS VTO=2.4 IS=1E-15 KP=0.84 CBD=195E-12 PB=1
    .MODEL MOSMODS NMOS VTO=1.8 IS=1E-15 KP=0.084 PB=1
    .MODEL DMOD D IS=6E-13 RS=.13 N=1.01
    .MODEL SMOD1 VSWITCH RON=.1 ROFF=1E5  VON=1.5 VOFF=4.5
    .MODEL SMOD2 VSWITCH RON=.1 ROFF=1E5  VON=-5 VOFF=-6
    .ENDS  ZVN4206AV
    *
    *$
    *


*ZETEX ZVN4206G Spice Model v1.0 Last Revised 30/01/02
    *
    .SUBCKT ZVN4206G 3 4 5
    *------connections-------D-G-S
    M1 6 2 8 8 MOSMOD
    M2 6 2 8 8 MOSMODS
    RG 4 2 30
    RD 3 6 0.05
    RS 8 5 0.5 
    RL 3 5 6E6
    C1 2 8 80E-12
    C2 2 3 25E-12
    C3 15 14 75E-12 
    C4 16 8 40E-12
    D1 5 3 DMOD
    S1 2 15 14 13 SMOD1
    S2 13 15 13 14 SMOD1
    S3 16 13 13 8 SMOD2
    S4 16 2 8 13 SMOD2
    Egs2 13 8 2 8 1
    Eds1 14 8 3 8 1
    .MODEL MOSMOD NMOS VTO=2.4 IS=1E-15 KP=0.84 CBD=195E-12 PB=1
    .MODEL MOSMODS NMOS VTO=1.8 IS=1E-15 KP=0.084 PB=1
    .MODEL DMOD D IS=6E-13 RS=.13 N=1.01
    .MODEL SMOD1 VSWITCH RON=.1 ROFF=1E5  VON=1.5 VOFF=4.5
    .MODEL SMOD2 VSWITCH RON=.1 ROFF=1E5  VON=-5 VOFF=-6
    .ENDS  ZVN4206G
    *
    *$
    *


*ZETEX ZVN4206GV Spice Model v1.0 Last Revised 30/01/02
    *
    .SUBCKT ZVN4206GV 3 4 5
    *------connections-------D-G-S
    M1 6 2 8 8 MOSMOD
    M2 6 2 8 8 MOSMODS
    RG 4 2 30
    RD 3 6 0.05
    RS 8 5 0.5 
    RL 3 5 6E6
    C1 2 8 80E-12
    C2 2 3 25E-12
    C3 15 14 75E-12 
    C4 16 8 40E-12
    D1 5 3 DMOD
    S1 2 15 14 13 SMOD1
    S2 13 15 13 14 SMOD1
    S3 16 13 13 8 SMOD2
    S4 16 2 8 13 SMOD2
    Egs2 13 8 2 8 1
    Eds1 14 8 3 8 1
    .MODEL MOSMOD NMOS VTO=2.4 IS=1E-15 KP=0.84 CBD=195E-12 PB=1
    .MODEL MOSMODS NMOS VTO=1.8 IS=1E-15 KP=0.084 PB=1
    .MODEL DMOD D IS=6E-13 RS=.13 N=1.01
    .MODEL SMOD1 VSWITCH RON=.1 ROFF=1E5  VON=1.5 VOFF=4.5
    .MODEL SMOD2 VSWITCH RON=.1 ROFF=1E5  VON=-5 VOFF=-6
    .ENDS  ZVN4206GV
    *
    *$
    *


*ZETEX ZVN4306A Spice Model v1.1 Last Revised 3/5/00
    *
    .SUBCKT ZVN4306A 3 4 5
    *NODES: DRAIN GATE SOURCE
    M1 3 2 5 5 MOD1
    RG 4 2 108
    RL 3 5 6E6
    C1 2 5 224.5E-12
    C2 3 2 10.5E-12 
    D1 5 3 DIODE1
    *
    .MODEL MOD1 NMOS VTO=2.634 RS=0.2762 RD=0.0 IS=1E-15 KP=9.77
    +CBD=405E-12 PB=1 LAMBDA=0
    .MODEL DIODE1 D IS=6.19E-13 N=1.0043 RS=0.065
    .ENDS ZVN4306A
    *
    *$
    *


*ZETEX ZVN4306AV Spice Model v1.0 Last Revised 23/3/06
    *
    .SUBCKT ZVN4306AV 3 4 5
    *NODES: DRAIN GATE SOURCE
    M1 3 2 5 5 MOD1
    RG 4 2 108
    RL 3 5 6E6
    C1 2 5 224.5E-12
    C2 3 2 10.5E-12 
    D1 5 3 DIODE1
    *
    .MODEL MOD1 NMOS VTO=2.634 RS=0.2762 RD=0.0 IS=1E-15 KP=9.77
    +CBD=405E-12 PB=1 LAMBDA=0
    .MODEL DIODE1 D IS=6.19E-13 N=1.0043 RS=0.065
    .ENDS ZVN4306AV
    *
    *$
    *


*ZETEX ZVN4306G Spice Model v1.1 Last Revised 3/5/00
    *
    .SUBCKT ZVN4306G 3 4 5
    *NODES: DRAIN GATE SOURCE
    M1 3 2 5 5 MOD1
    RG 4 2 108
    RL 3 5 6E6
    C1 2 5 224.5E-12
    C2 3 2 10.5E-12 
    D1 5 3 DIODE1
    *
    .MODEL MOD1 NMOS VTO=2.634 RS=0.2762 RD=0.0 IS=1E-15 KP=9.77
    +CBD=405E-12 PB=1 LAMBDA=0
    .MODEL DIODE1 D IS=6.19E-13 N=1.0043 RS=0.065
    .ENDS ZVN4306G
    *
    *$
    *


*ZETEX ZVN4306GV Spice Model v1.0 Last Revised 23/2/06
    *
    .SUBCKT ZVN4306GV 3 4 5
    *NODES: DRAIN GATE SOURCE
    M1 3 2 5 5 MOD1
    RG 4 2 108
    RL 3 5 6E6
    C1 2 5 224.5E-12
    C2 3 2 10.5E-12 
    D1 5 3 DIODE1
    *
    .MODEL MOD1 NMOS VTO=2.634 RS=0.2762 RD=0.0 IS=1E-15 KP=9.77
    +CBD=405E-12 PB=1 LAMBDA=0
    .MODEL DIODE1 D IS=6.19E-13 N=1.0043 RS=0.065
    .ENDS ZVN4306GV
    *
    *$
    *


*ZETEX ZXMN4A06G Spice Model v3.0 Last Revised 4/12/07
    *
    .SUBCKT ZXMN4A06G 30 40 50
    *------connections-------D-G-S
    M1 6 2 5 5 Nmod L=1.16E-6 W=1.7
    M2 5 2 5 6 Pmod L=1.3E-6 W=0.75
    RG 4 2 1.6
    RIN 2 5 1E12
    RD 3 6 Rmod 0.012
    RS 5 55 Rmod 0.012
    RL 3 5 3E12
    C1 2 5 75E-12
    C2 3 4 5E-12
    D1 5 3  Dbodymod
    LD 3 30 1E-9
    LG 4 40 2.3E-9
    LS 55 50 2.3E-9
    .MODEL Nmod NMOS (LEVEL=3 TOX=7.5E-8 NSUB=5E16 VTO= 1.75
    +KP=1.5E-5 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10)
    .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E16
    +TPG=-1 IS=1E-15 N=10)
    .MODEL Dbodymod D (IS=8E-12 RS=.016 IKF=10 TRS1=1.5e-3
    +CJO=250e-12  BV=44 TT=17e-9)
    .MODEL Rmod RES (TC1=3.5e-3 TC2=0.8E-5)
    .ENDS ZXMN4A06G
    *
    *$
    *


*ZETEX ZXMN4A06K Spice Model v3.0 Last Revised 4/12/07
    *
    .SUBCKT ZXMN4A06K 30 40 50
    *------connections-------D-G-S
    M1 6 2 5 5 Nmod L=1.16E-6 W=1.7
    M2 5 2 5 6 Pmod L=1.3E-6 W=0.75
    RG 4 2 1.6
    RIN 2 5 1E12
    RD 3 6 Rmod 0.012
    RS 5 55 Rmod 0.012
    RL 3 5 3E12
    C1 2 5 75E-12
    C2 3 4 5E-12
    D1 5 3  Dbodymod
    LD 3 30 1E-9
    LG 4 40 2.3E-9
    LS 55 50 2.3E-9
    .MODEL Nmod NMOS (LEVEL=3 TOX=7.5E-8 NSUB=5E16 VTO= 1.75
    +KP=1.5E-5 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10)
    .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E16
    +TPG=-1 IS=1E-15 N=10)
    .MODEL Dbodymod D (IS=8E-12 RS=.016 IKF=10 TRS1=1.5e-3
    +CJO=250e-12  BV=44 TT=17e-9)
    .MODEL Rmod RES (TC1=3.5e-3 TC2=0.8E-5)
    .ENDS ZXMN4A06K
    *
    *$
    *
    


*ZETEX ZXMN6A07F Spice Model v1.0 Last Revised 29/6/05
    *              
    .SUBCKT ZXMN6A07F 30 40 50
    *----connections-----D_G_S
    M1 6 2 5 5 Nmod L=.6E-6 W=0.34
    M2 5 2 5 6 Pmod L=.6E-6 W=0.24
    RG 4 2 4
    RIN 2 5 1E12
    RD 3 6 Rmod1 0.12
    RL 6 5 10E9
    C1 2 5 25E-12
    C2 3 4 15E-12
    D1 5 3  Dbodymod
    LD 3 30 0.5E-9
    LG 4 40 1.0E-9
    LS 5 50 1.0E-9
    .MODEL Nmod NMOS (LEVEL=3 TOX=85E-9 NSUB=1E17 VTO=3.35  XJ=1.6E-6
    +KP=9.5E-6 RS=.035 NFS=1.2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10)
    .MODEL Pmod PMOS (LEVEL=3 TOX=80E-9 NSUB=1E16 XJ=2.3E-6
    +TPG=-1 IS=1E-15 N=10)
    .MODEL Dbodymod D (IS=0.5E-12 RS=.055  TRS1=1.5e-3
    +CJO=71e-12  TT=24E-9 BV=66)
    .MODEL Rmod1 RES (TC1=7.3e-3 TC2=1.6E-5)
    .ENDS ZXMN6A07F
    *
    *$
    *


*ZETEX ZXMN6A07Z Spice Model v1.0 Last Revised 29/6/05
    *              
    .SUBCKT ZXMN6A07Z 30 40 50
    *----connections-----D_G_S
    M1 6 2 5 5 Nmod L=.6E-6 W=0.34
    M2 5 2 5 6 Pmod L=.6E-6 W=0.24
    RG 4 2 4
    RIN 2 5 1E12
    RD 3 6 Rmod1 0.12
    RL 6 5 10E9
    C1 2 5 25E-12
    C2 3 4 15E-12
    D1 5 3  Dbodymod
    LD 3 30 0.6E-9
    LG 4 40 2.0E-9
    LS 5 50 2.0E-9
    .MODEL Nmod NMOS (LEVEL=3 TOX=85E-9 NSUB=1E17 VTO=3.35  XJ=1.6E-6
    +KP=9.5E-6 RS=.035 NFS=1.2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10)
    .MODEL Pmod PMOS (LEVEL=3 TOX=80E-9 NSUB=1E16 XJ=2.3E-6
    +TPG=-1 IS=1E-15 N=10)
    .MODEL Dbodymod D (IS=0.5E-12 RS=.055  TRS1=1.5e-3
    +CJO=71e-12  TT=24E-9 BV=66)
    .MODEL Rmod1 RES (TC1=7.3e-3 TC2=1.6E-5)
    .ENDS ZXMN6A07Z
    *
    *$
    *


*ZETEX ZXMN6A08E6 Spice Model v2.0 Last Revised 22/2/05
    *
    .SUBCKT ZXMN6A08E6 30 40 50
    *----connections-----D_G_S
    M1 6 2 5 5 Nmod L=1E-6 W=0.6
    M2 5 2 5 6 Pmod L=1E-6 W=0.45
    RG 4 2 4
    RIN 2 5 1E12
    RD 3 6 Rmod1 0.075
    RL 6 5 10E9
    C1 2 5 100E-12
    C2 3 4 5E-12
    D1 5 3  Dbodymod
    LD 3 30 0.3E-9
    LG 4 40 1.9E-9
    LS 5 50 1.9E-9
    .MODEL Nmod NMOS (LEVEL=3 TOX=5E-8 NSUB=2E17 VTO=2.25
    +KP=1.8E-5 RS=.009 NFS=2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10)
    .MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=1E16
    +TPG=-1 IS=1E-15 N=10)
    .MODEL Dbodymod D (IS=2E-12 RS=.025 IKF=0.06 TRS1=1.5e-3
    +CJO=120e-12  BV=61)
    .MODEL Rmod1 RES (TC1=6e-3 TC2=1.2E-5)
    .ENDS ZXMN6A08E6
    *
    *$
    *


*ZETEX ZXMN6A08G Spice Model v2.0 Last Revised 24/10/07
    *
    .SUBCKT ZXMN6A08G 30 40 50
    *----connections-----D_G_S
    M1 6 2 5 5 Nmod L=1E-6 W=0.6
    M2 5 2 5 6 Pmod L=1E-6 W=0.45
    RG 4 2 4
    RIN 2 5 1E12
    RD 3 6 Rmod1 0.075
    RL 6 5 10E9
    C1 2 5 100E-12
    C2 3 4 5E-12
    D1 5 3  Dbodymod
    LD 3 30 1E-9
    LG 4 40 2.3E-9
    LS 5 50 2.3E-9
    .MODEL Nmod NMOS (LEVEL=3 TOX=5E-8 NSUB=2E17 VTO=2.25
    +KP=1.8E-5 RS=.009 NFS=2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10)
    .MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=1E16
    +TPG=-1 IS=1E-15 N=10)
    .MODEL Dbodymod D (IS=2E-12 RS=.025 IKF=0.06 TRS1=1.5e-3
    +CJO=120e-12  BV=61)
    .MODEL Rmod1 RES (TC1=6e-3 TC2=1.2E-5)
    .ENDS ZXMN6A08G
    *
    *$
    *


*ZETEX ZXMN6A09DN8 Spice Model v1.5 Last Revised 24/2/05
    *
    .SUBCKT ZXMN6A09DN8 30 40 50
    *------connections------D-G-S
    M1 6 2 8 8 MOSMOD
    M2 6 2 8 8 MOSMODS
    RG 4 2 5
    RD 3 6 0.005
    RS 8 5 0.005 
    RL 3 5 60E6
    C1 2 8 1000E-12
    C2 2 3 90E-12
    C3 15 14 700E-12 
    C4 16 8 500E-12
    D1 5 3 DMOD
    S1 2 15 14 13 SMOD1
    S2 13 15 13 14 SMOD1
    S3 16 13 13 8 SMOD2
    S4 16 2 8 13 SMOD2
    Egs2 13 8 2 8 1
    Eds1 14 8 3 8 1
    LD 3 30 1.5E-9
    LG 4 40 1.2E-9
    LS 5 50 1.2E-9
    .MODEL MOSMOD NMOS VTO=2.6 IS=1E-15 KP=11.4 CBD=412E-12 PB=1
    .MODEL MOSMODS NMOS VTO=2 IS=1E-15 KP=0.1 PB=1
    .MODEL DMOD D IS=6E-13 RS=.15 N=1.01 TT=4e-8
    .MODEL SMOD1 VSWITCH RON=.1 ROFF=1E5  VON=0 VOFF=3
    .MODEL SMOD2 VSWITCH RON=.1 ROFF=1E5  VON=-5 VOFF=-6
    .ENDS ZXMN6A09DN8
    *
    *$
    *


*ZETEX ZXMN6A09G Spice Model v1.5 Last Revised 24/2/05
    *
    .SUBCKT ZXMN6A09G 30 40 50
    *------connections------D-G-S
    M1 6 2 8 8 MOSMOD
    M2 6 2 8 8 MOSMODS
    RG 4 2 5
    RD 3 6 0.005
    RS 8 5 0.005 
    RL 3 5 60E6
    C1 2 8 1000E-12
    C2 2 3 90E-12
    C3 15 14 700E-12 
    C4 16 8 500E-12
    D1 5 3 DMOD
    S1 2 15 14 13 SMOD1
    S2 13 15 13 14 SMOD1
    S3 16 13 13 8 SMOD2
    S4 16 2 8 13 SMOD2
    Egs2 13 8 2 8 1
    Eds1 14 8 3 8 1
    LD 3 30 1E-9
    LG 4 40 2.3E-9
    LS 5 50 2.3E-9
    .MODEL MOSMOD NMOS VTO=2.6 IS=1E-15 KP=11.4 CBD=412E-12 PB=1
    .MODEL MOSMODS NMOS VTO=2 IS=1E-15 KP=0.1 PB=1
    .MODEL DMOD D IS=6E-13 RS=.15 N=1.01 TT=4e-8
    .MODEL SMOD1 VSWITCH RON=.1 ROFF=1E5  VON=0 VOFF=3
    .MODEL SMOD2 VSWITCH RON=.1 ROFF=1E5  VON=-5 VOFF=-6
    .ENDS ZXMN6A09G
    *
    *$
    *


*ZETEX ZXMN6A09K Spice Model v1.5 Last Revised 24/2/05
    *
    .SUBCKT ZXMN6A09K 30 40 50
    *------connections------D-G-S
    M1 6 2 8 8 MOSMOD
    M2 6 2 8 8 MOSMODS
    RG 4 2 5
    RD 3 6 0.005
    RS 8 5 0.005 
    RL 3 5 60E6
    C1 2 8 1000E-12
    C2 2 3 90E-12
    C3 15 14 700E-12 
    C4 16 8 500E-12
    D1 5 3 DMOD
    S1 2 15 14 13 SMOD1
    S2 13 15 13 14 SMOD1
    S3 16 13 13 8 SMOD2
    S4 16 2 8 13 SMOD2
    Egs2 13 8 2 8 1
    Eds1 14 8 3 8 1
    LD 3 30 1.3E-9
    LG 4 40 2.4E-9
    LS 5 50 2.4E-9
    .MODEL MOSMOD NMOS VTO=2.6 IS=1E-15 KP=11.4 CBD=412E-12 PB=1
    .MODEL MOSMODS NMOS VTO=2 IS=1E-15 KP=0.1 PB=1
    .MODEL DMOD D IS=6E-13 RS=.15 N=1.01 TT=4e-8
    .MODEL SMOD1 VSWITCH RON=.1 ROFF=1E5  VON=0 VOFF=3
    .MODEL SMOD2 VSWITCH RON=.1 ROFF=1E5  VON=-5 VOFF=-6
    .ENDS ZXMN6A09K
    *
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=30/01/2009
*VERSION=1
*PIN_ORDER         Sn1, Gn1, Sn2, Gn2, Dn2, Dn2, Dn1, Dn1
*
.SUBCKT ZXMN6A11DN8  1 2 3 4 5 6 7 8
*Dev1 N-channel
M11 20 21 22 22 Nnmod1 L=0.8E-6 W=0.5
M12 22 21 22 20 Pnmod1 L=0.6E-6 W=0.45
RG1 26 27 4.5
RIN1 21 22 2E12
RD1 20 24 Rnmod1 0.08
RS1 22 23 1E-6
RL1 23 24 10E9
C11 21 22 220E-12
C12 20 21 1E-12
D1 23 24  Dnmod1
Egt1 26 21 30 22 1
Vgt1 22 31 1.0
Igt1 22 30 1.0
Rgt1 30 31 Rnmod2 1
LD1 24 25 1.5E-9
RP11 7 25 1E-6
RP12 8 25 1E-6
LG1 2 27 1.2E-9
LS1 1 23 1.2E-9
*Dev2 N-channel
M21 60 61 62 62 Nnmod1 L=0.8E-6 W=0.5
M22 62 61 62 60 Pnmod1 L=0.6E-6 W=0.45
RG21 66 67 4.5
RIN2 61 62 2E12
RD2 60 64 Rnmod1 0.08
RS2 62 63 1E-6
RL2 63 64 10E9
C21 61 62 220E-12
C22 60 61 1E-12
D2 63 64  Dnmod1
Egt2 66 61 30 22 1
Vgt2 62 71 1.0
Igt2 62 70 1.0
Rgt2 70 71 Rnmod2 1
LD2 64 65 1.5E-9
RP21 5 65 1E-6
RP22 6 65 1E-6
LG2 4 67 1.2E-9
LS2 3 63 1.2E-9
.MODEL Nnmod1 NMOS (LEVEL=3 TOX=8E-8 NSUB=1E17 VTO=2.45 KP=1.6E-5 
+RS=.007 NFS=2E11 KAPPA=0.06 IS=1E-16 N=10)
.MODEL Pnmod1 PMOS (LEVEL=3 TOX=8E-8 NSUB=1E16 TPG=-1 IS=1E-16 N=10)
.MODEL Dnmod1 D (IS=1.8E-13 RS=.023 TT=2.2e-8 CJO=90e-12  BV=63)
.MODEL Rnmod1 RES (TC1=5.5e-3 TC2=1.4E-5)
.MODEL Rnmod2 RES (TC1=-1.04e-3 TC2=-2E-6)
.ENDS
*
*$


*ZETEX ZXMN6A11G Spice Model v1.0 Last Revised 29/11/07
    *
    .SUBCKT ZXMN6A11G 30 40 50
    *----connections-----D_G_S
    M1 6 2 5 5 Nmod L=0.8E-6 W=0.5
    M2 5 2 5 6 Pmod L=1E-6 W=0.45
    RG 4 22 2
    RIN1 2 5 2E12
    RIN2 22 5 2E12
    RD 3 6 Rmod1 0.08
    RL 6 5 10E9
    C1 2 5 220E-12
    C2 3 4 1E-12
    D1 5 3  Dmod1
    Rt 5 61 Rmod2 1
    Vt 61 62 1
    It 5 62 1
    Et 2 22  62 5 1
    LD 3 30 1E-9
    LG 4 40 2.3E-9
    LS 5 50 2.3E-9
    .MODEL Nmod NMOS (LEVEL=3 TOX=8E-8 NSUB=1E17 VTO=2.45 KP=1.6E-5 
    +RS=.007 NFS=2E11 KAPPA=0.06 IS=1E-16 N=10)
    .MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=1E16 TPG=-1 IS=1E-16 N=10)
    .MODEL Dmod1 D (IS=1.8E-13 RS=.023 TT=2.2e-8 CJO=90e-12  BV=63)
    .MODEL Rmod1 RES (TC1=5.5e-3 TC2=1.4E-5)
    .MODEL Rmod2 RES (TC1=1e-3 TC2=0E-5)
    .ENDS ZXMN6A11G
    *
    *$
    *


*ZETEX ZXMN6A11Z Spice Model v1.0 Last Revised 29/11/07
    *
    .SUBCKT ZXMN6A11Z 30 40 50
    *----connections-----D_G_S
    M1 6 2 5 5 Nmod L=0.8E-6 W=0.5
    M2 5 2 5 6 Pmod L=1E-6 W=0.45
    RG 4 22 2
    RIN1 2 5 2E12
    RIN2 22 5 2E12
    RD 3 6 Rmod1 0.08
    RL 6 5 10E9
    C1 2 5 220E-12
    C2 3 4 1E-12
    D1 5 3  Dmod1
    Rt 5 61 Rmod2 1
    Vt 61 62 1
    It 5 62 1
    Et 2 22  62 5 1
    LD 3 30 1.3E-9
    LG 4 40 2.4E-9
    LS 5 50 2.4E-9
    .MODEL Nmod NMOS (LEVEL=3 TOX=8E-8 NSUB=1E17 VTO=2.45 KP=1.6E-5 
    +RS=.007 NFS=2E11 KAPPA=0.06 IS=1E-16 N=10)
    .MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=1E16 TPG=-1 IS=1E-16 N=10)
    .MODEL Dmod1 D (IS=1.8E-13 RS=.023 TT=2.2e-8 CJO=90e-12  BV=63)
    .MODEL Rmod1 RES (TC1=5.5e-3 TC2=1.4E-5)
    .MODEL Rmod2 RES (TC1=1e-3 TC2=0E-5)
    .ENDS ZXMN6A11Z
    *
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=30/01/2009
*VERSION=1
*PIN_ORDER         Sn1, Gn1, Sn2, Gn2, Dn2, Dn2, Dn1, Dn1
*
.SUBCKT ZXMN6A25DN8 1 2 3 4 5 6 7 8
*Dev1 N-channel
M11 20 21 22 22 Nnmod1 L=1E-6 W=2
M12 22 21 22 20 Pnmod1 L=1E-6 W=1.5
RG1 26 27 2
RIN1 21 22 2E12
RD1 20 24 Rnmod1 0.04
RS1 22 23 1e-6
RL1 23 24 10E9
C11 21 22 200E-12
C12 20 21 5E-12
D1 23 24  Dnmod1
Egt1 26 21 30 22 1
Vgt1 22 31 1.0
Igt1 22 30 1.0
Rgt1 30 31 Rnmod2 1
LD1 24 25 1.5E-9
RP11 7 25 1E-6
RP12 8 25 1E-6
LG1 2 27 1.2E-9
LS1 1 23 1.2E-9
*Dev2 N-channel
M21 60 61 62 62 Nnmod1 L=1E-6 W=2
M22 62 61 62 60 Pnmod1 L=1E-6 W=1.5
RG2 66 67 2
RIN2 61 62 2E12
RD2 60 64 Rnmod1 0.04
RS2 62 63 1e-6
RL2 63 64 10E9
C21 61 62 200E-12
C22 60 61 5E-12
D2 63 64  Dnmod1
Egt2 66 61 30 22 1
Vgt2 62 71 1.0
Igt2 62 70 1.0
Rgt2 70 71 Rnmod2 1
LD2 64 65 1.5E-9
RP21 5 65 1E-6
RP22 6 65 1E-6
LG2 4 67 1.2E-9
LS2 3 63 1.2E-9
.MODEL Nnmod1 NMOS (LEVEL=3 TOX=8E-8 NSUB=6E16 VTO=2.4 KP=1.6E-5
+RS=.006 NFS=5E11 KAPPA=0.06 IS=1E-16 N=10)
.MODEL Pnmod1 PMOS (LEVEL=3 TOX=8E-8 NSUB=6.6E15 TPG=-1 IS=1E-16 N=10)
.MODEL Dnmod1 D (IS=3E-12 RS=.02 TT=2.3e-8 CJO=210e-12  BV=66)
.MODEL Rnmod1 RES (TC1=3.4e-3 TC2=-1.5E-5)
.MODEL Rnmod2 RES (TC1=1.42E-3e-3 TC2=-1.5E-6)
.ENDS
*
*$


*ZETEX ZXMN6A25G Spice Model v1.0 Last Revised 28/11/07
    *
    .SUBCKT ZXMN6A25G 30 40 50
    *----connections-----D_G_S
    M1 6 2 5 5 Nmod L=1E-6 W=2
    M2 5 2 5 6 Pmod L=1E-6 W=1.5
    RG 4 22 2
    RIN1 2 5 2E12
    RIN2 22 5 2E12
    RD 3 6 Rmod1 0.04
    RL 6 5 10E9
    C1 2 5 200E-12
    C2 3 4 5E-12
    D1 5 3  Dmod1
    Rt 5 61 Rmod2 1
    Vt 61 62 1
    It 5 62 1
    Et 2 22  62 5 1
    LD 3 30 1E-9
    LG 4 40 2.3E-9
    LS 5 50 2.3E-9
    .MODEL Nmod NMOS (LEVEL=3 TOX=8E-8 NSUB=6E16 VTO=2.4 KP=1.6E-5
    +RS=.006 NFS=5E11 KAPPA=0.06 IS=1E-16 N=10)
    .MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=6.6E15 TPG=-1 IS=1E-16 N=10)
    .MODEL Dmod1 D (IS=3E-12 RS=.02 TT=2.3e-8 CJO=210e-12  BV=63)
    .MODEL Rmod1 RES (TC1=5e-3 TC2=1.4E-5)
    .MODEL Rmod2 RES (TC1=-1.3e-3 TC2=0E-5)
    .ENDS ZXMN6A25G
    *
    *$
    *


*ZETEX ZXMN6A25K Spice Model v1.0 Last Revised 28/11/07
    *
    .SUBCKT ZXMN6A25K 30 40 50
    *----connections-----D_G_S
    M1 6 2 5 5 Nmod L=1E-6 W=2
    M2 5 2 5 6 Pmod L=1E-6 W=1.5
    RG 4 22 2
    RIN1 2 5 2E12
    RIN2 22 5 2E12
    RD 3 6 Rmod1 0.04
    RL 6 5 10E9
    C1 2 5 200E-12
    C2 3 4 5E-12
    D1 5 3  Dmod1
    Rt 5 61 Rmod2 1
    Vt 61 62 1
    It 5 62 1
    Et 2 22  62 5 1
    LD 3 30 1.3E-9
    LG 4 40 2.4E-9
    LS 5 50 2.4E-9
    .MODEL Nmod NMOS (LEVEL=3 TOX=8E-8 NSUB=6E16 VTO=2.4 KP=1.6E-5
    +RS=.006 NFS=5E11 KAPPA=0.06 IS=1E-16 N=10)
    .MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=6.6E15 TPG=-1 IS=1E-16 N=10)
    .MODEL Dmod1 D (IS=3E-12 RS=.02 TT=2.3e-8 CJO=210e-12  BV=63)
    .MODEL Rmod1 RES (TC1=5e-3 TC2=1.4E-5)
    .MODEL Rmod2 RES (TC1=-1.3e-3 TC2=0E-5)
    .ENDS ZXMN6A25K
    *
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=27/10/2008
*VERSION=1
*PIN_ORDER         D G S
*
.SUBCKT ZXMN6A25N8 1 2 3
*Dev1 N-channel
M11 20 21 22 22 Nnmod1 L=1E-6 W=2
M12 22 21 22 20 Pnmod1 L=1E-6 W=1.5
RG1 26 27 2
RIN1 21 22 2E12
RD1 20 24 Rnmod1 0.04
RS1 22 23 1e-6
RL1 23 24 10E9
C11 21 22 200E-12
C12 20 21 5E-12
D1 23 24  Dnmod1
Egt1 26 21 30 22 1
Vgt1 22 31 1.0
Igt1 22 30 1.0
Rgt1 30 31 Rnmod2 1
LD1 1 24 1.3E-9
LG1 2 27 1.2E-9
LS1 3 23 1.2E-9
.MODEL Nnmod1 NMOS (LEVEL=3 TOX=8E-8 NSUB=6E16 VTO=2.4 KP=1.6E-5
+RS=.006 NFS=5E11 KAPPA=0.06 IS=1E-16 N=10)
.MODEL Pnmod1 PMOS (LEVEL=3 TOX=8E-8 NSUB=6.6E15 TPG=-1 IS=1E-16 N=10)
.MODEL Dnmod1 D (IS=3E-12 RS=.02 TT=2.3e-8 CJO=210e-12  BV=66)
.MODEL Rnmod1 RES (TC1=3.4e-3 TC2=-1.5E-5)
.MODEL Rnmod2 RES (TC1=1.42E-3e-3 TC2=-1.5E-6)
.ENDS
*
*$


*ZETEX ZXMN7A11G Spice Model v1.0 Last Revised 29/11/07
    *
    .SUBCKT ZXMN7A11G 30 40 50
    *----connections-----D_G_S
    M1 6 2 5 5 Nmod L=0.8E-6 W=0.5
    M2 5 2 5 6 Pmod L=1E-6 W=0.45
    RG 4 22 2.2
    RIN1 2 5 2E12
    RIN2 22 5 2E12
    RD 3 6 Rmod1 0.08
    RL 6 5 10E9
    C1 2 5 220E-12
    C2 3 4 1E-12
    D1 5 3  Dmod1
    Rt 5 61 Rmod2 1
    Vt 61 62 1
    It 5 62 1
    Et 2 22  62 5 1
    LD 3 30 1E-9
    LG 4 40 2.3E-9
    LS 5 50 2.3E-9
    .MODEL Nmod NMOS (LEVEL=3 TOX=8E-8 NSUB=1E17 VTO=1.68 KP=1.6E-5 
    +RS=.005 NFS=2E11 KAPPA=0.06 IS=1E-16 N=10)
    .MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=1E16 TPG=-1 IS=1E-16 N=10)
    .MODEL Dmod1 D (IS=1.8E-13 RS=.023 TT=2e-8 CJO=90e-12  BV=73)
    .MODEL Rmod1 RES (TC1=4.5e-3 TC2=1.4E-5)
    .MODEL Rmod2 RES (TC1=-2e-3 TC2=0E-5)
    .ENDS ZXMN7A11G
    *
    *$
    *


*ZETEX ZXMN7A11K Spice Model v1.0 Last Revised 29/11/07
    *
    .SUBCKT ZXMN7A11K 30 40 50
    *----connections-----D_G_S
    M1 6 2 5 5 Nmod L=0.8E-6 W=0.5
    M2 5 2 5 6 Pmod L=1E-6 W=0.45
    RG 4 22 2.2
    RIN1 2 5 2E12
    RIN2 22 5 2E12
    RD 3 6 Rmod1 0.08
    RL 6 5 10E9
    C1 2 5 220E-12
    C2 3 4 1E-12
    D1 5 3  Dmod1
    Rt 5 61 Rmod2 1
    Vt 61 62 1
    It 5 62 1
    Et 2 22  62 5 1
    LD 3 30 1.3E-9
    LG 4 40 2.4E-9
    LS 5 50 2.4E-9
    .MODEL Nmod NMOS (LEVEL=3 TOX=8E-8 NSUB=1E17 VTO=1.68 KP=1.6E-5 
    +RS=.005 NFS=2E11 KAPPA=0.06 IS=1E-16 N=10)
    .MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=1E16 TPG=-1 IS=1E-16 N=10)
    .MODEL Dmod1 D (IS=1.8E-13 RS=.023 TT=2e-8 CJO=90e-12  BV=73)
    .MODEL Rmod1 RES (TC1=4.5e-3 TC2=1.4E-5)
    .MODEL Rmod2 RES (TC1=-2e-3 TC2=0E-5)
    .ENDS ZXMN7A11K
    *
    *$
    *


*---------- 2N7002A Spice Model ----------
.SUBCKT 2N7002A 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 2.175 
RS 30 3 0.001 
RG 20 2 79.9 
DESD1 2 5 DESD 
DESD2 3 5 DESD 
CGS 2 3 2.011E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5.9E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.595 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.58 U0 = 400 KAPPA = 4.069 
.MODEL DCGD D CJO = 1.646E-011 VJ = 0.1277 M = 0.4 
.MODEL DSUB D IS = 4.551E-009 N = 1.836 RS = 0.1357 
+ CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 
.MODEL DLIM D IS = 0.0001 
.MODEL DESD D IS = 1.223E-008 N = 54.79 BV = 5.385 
.ENDS
*Diodes 2N7002A Spice Model v1.0 Last Revised 2016/6/15


*SRC=2N7002DW;DI_2N7002DW;MOSFETs N;Enh;60.0V 0.115A 3.20ohms  Diodes Inc. MOSFET - One element of dual
.MODEL DI_2N7002DW  NMOS( LEVEL=1 VTO=1.50 KP=32.0m  GAMMA=1.86
+ PHI=.75  LAMBDA=34.2u RD=0.448 RS=0.448
+ IS=57.5f  PB=0.800 MJ=0.460 CBD=44.5p 
+ CBS=53.4p  CGSO=24.0n CGDO=20.0n CGBO=176n  )  *   -- Assumes default L=100U W=100U --


*SRC=2N7002E;DI_2N7002E;MOSFETs N;Enh;60.0V 0.240A 4.00ohms  Diodes Inc. MOSFET .MODEL DI_2N7002E  NMOS( LEVEL=1 VTO=2.50 KP=781u  GAMMA=3.10
+ PHI=.75  LAMBDA=83.2u RD=0.560 RS=0.560
+ IS=120f  PB=0.800 MJ=0.460 CBD=44.5p
+ CBS=53.4p  CGSO=24.0n CGDO=20.0n CGBO=176n  )
*   -- Assumes default L=100U W=100U --


*SRC=2N7002K;DI_2N7002K;MOSFETs N;Enh;60.0V 0.300A 2.00ohms  Diodes Inc. MOSFET
.MODEL DI_2N7002K  NMOS( LEVEL=1 VTO=2.50 KP=32.0m  GAMMA=3.10
+ PHI=.75  LAMBDA=104u RD=0.280 RS=0.280
+ IS=150f  PB=0.800 MJ=0.460 CBD=98.8p 
+ CBS=119p  CGSO=60.0n CGDO=50.0n CGBO=390n  )
*   -- Assumes default L=100U W=100U --


*---------- 2N7002T Spice Model ----------
.SUBCKT 2N7002T 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 1.213 
RS 30 3 0.001 
RG 20 2 71.9 
CGS 2 3 1.8E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 6.6E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.885 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.4493 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 2.522E-011 VJ = 0.6 M = 0.7265 
.MODEL DSUB D IS = 2.816E-009 N = 1.731 RS = 0.05482 BV = 20 CJO = 5.5E-011 VJ = 0.6 M = 0.7957 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes 2N7002T Spice Model v1.0M Last Revised 2016/2/1


*SRC=2N7002W;DI_2N7002W;MOSFETs N;Enh;60.0V 0.115A 3.20ohms  Diodes Inc. MOSFET 
.MODEL DI_2N7002W  NMOS( LEVEL=1 VTO=1.50 KP=32.0m  GAMMA=1.86
+ PHI=.75  LAMBDA=40.0u RD=0.448 RS=0.448
+ IS=57.5f  PB=0.800 MJ=0.460 CBD=44.5p 
+ CBS=53.4p  CGSO=24.0n CGDO=20.0n CGBO=176n  )   *   -- Assumes default L=100U W=100U --


*SRC=BS870;DI_BS870;MOSFETs N;Enh;60.0V 0.250A 3.50ohms  Diodes Inc. MOSFET 
.MODEL DI_BS870  NMOS( LEVEL=1 VTO=2.00 KP=32.0m  GAMMA=2.48
+ PHI=.75  LAMBDA=86.8u RD=0.490 RS=0.490
+ IS=125f  PB=0.800 MJ=0.460 CBD=29.8p 
+ CBS=35.8p  CGSO=24.0n CGDO=20.0n CGBO=176n  )   *   -- Assumes default L=100U W=100U --


*ZETEX BSS138 Spice Model v2.0 Last Revised 5/4/07
    *
    .SUBCKT BSS138/ZTX 3 4 5
    * Nodes        D G S
    M1 3 2 5 5 MOD1
    RG 4 2 20
    RL 3 5 6E6
    C1 2 5 30E-12
    C2 3 2 1E-12 
    C3 7 5 58E-12
    D1 5 3 Dmod1
    D2 6 3 Dmod2
    Egs1 2 6 2 5 1
    Egs2 8 5 2 5 1
    S1 2 7 3 2 SMOD1a
    S2 7 8 3 2 SMOD1b
    .MODEL MOD1 NMOS VTO=1 RS=1.58 RD=0.0 IS=1E-15 KP=0.395
    +CBD=53.5E-12 PB=1 LAMBDA=267E-6
    .MODEL Dmod1 D IS=1.254E-13 N=1.0207 RS=0.222
    .MODEL Dmod2 D CJO=40E-12
    .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4  VON=-1 VOFF=1
    .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4  VON=1 VOFF=-1
    .ENDS
    *
    *$
    *


*---------- BSS138DW Spice Model ----------
.SUBCKT BSS138DW 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.9338 
RS 30 3 0.001 
RG 20 2 47 
CGS 2 3 1.906E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 4.9E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 1E-012 VTO = 1.422 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.5025 U0 = 400 KAPPA = 7.117 
.MODEL DCGD D CJO = 9.463E-012 VJ = 6.446 M = 0.9816 
.MODEL DSUB D IS = 7.582E-010 N = 1.586 RS = 0.1976 
+ BV = 65 CJO = 1.173E-011 VJ = 0.03727 M = 0.2868 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes BSS138DW Spice Model v1.0 Last Revised 2012/8/22


*---------- BSS138W Spice Model ----------
.SUBCKT BSS138W 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.9338 
RS 30 3 0.001 
RG 20 2 47 
CGS 2 3 1.906E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 4.9E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 1E-012 VTO = 1.422 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.5025 U0 = 400 KAPPA = 7.117 
.MODEL DCGD D CJO = 9.463E-012 VJ = 6.446 M = 0.9816 
.MODEL DSUB D IS = 7.582E-010 N = 1.586 RS = 0.1976 
+ BV = 65 CJO = 1.173E-011 VJ = 0.03727 M = 0.2868 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes BSS138W Spice Model v1.0 Last Revised 2012/8/22


*SRC=DMN5010VAK;DI_DMN5010VAK;MOSFETs N;Enh;50.0V 0.280A 2.00ohms  Diodes Inc. N Channel MOSFET
.MODEL DI_DMN5010VAK  NMOS( LEVEL=1 VTO=1.00 KP=0.200  GAMMA=1.24
+ PHI=.75  LAMBDA=117u RD=0.280 RS=0.280
+ IS=140f  PB=0.800 MJ=0.460 CBD=98.8p 
+ CBS=119p  CGSO=60.0n CGDO=50.0n CGBO=390n  )
*   -- Assumes default L=100U W=100U --


*SRC=DMN55D0UT;DI_DMN55D0UT;MOSFETs N;Enh;50.0V 0.160A 4.00ohms  Diodes Inc MOSFET
.MODEL DI_DMN55D0UT  NMOS( LEVEL=1 VTO=1.00 KP=0.324  GAMMA=1.24
+ PHI=.75  LAMBDA=133u RD=0.560 RS=0.560
+ IS=80.0f  PB=0.800 MJ=0.460 CBD=9.60p 
+ CBS=11.5p  CGSO=25.2n CGDO=21.0n CGBO=204n  )
*   -- Assumes default L=100U W=100U --


*---------- DMN5L06DWK Spice Model ----------
.SUBCKT DMN5L06DWK 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 1.449 
RS 30 3 0.001 
RG 20 2 127 
DESD1 2 5 DESD 
DESD2 3 5 DESD 
CGS 2 3 2.688E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.189 TOX = 6E-008 NSUB = 1E+016 KP = 1.163 U0 = 400 KAPPA = 14.08 
.MODEL DCGD D CJO = 1.808E-011 VJ = 0.134 M = 0.369 
.MODEL DSUB D IS = 247.6E-9 N = 1.566 RS = 0.358 EG = 0.06341 XTI = 8.194 
+ TNOM = 217.5 BV = 70 CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 
.MODEL DLIM D IS = 0.0001 
.MODEL DESD D IS = 2.728E-008 N = 66.22 BV = 5.068 
.ENDs
*Diodes DMN5L06DWK Spice Model v1.0 Last Revised 2013/2/18


*---------- DMN5L06K Spice Model ----------
.SUBCKT DMN5L06K 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 1.449 
RS 30 3 0.001 
RG 20 2 127 
DESD1 2 5 DESD 
DESD2 3 5 DESD 
CGS 2 3 2.688E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.189 TOX = 6E-008 NSUB = 1E+016 KP = 1.163 U0 = 400 KAPPA = 14.08 
.MODEL DCGD D CJO = 1.808E-011 VJ = 0.134 M = 0.369 
.MODEL DSUB D IS = 247.6E-9 N = 1.566 RS = 0.358 EG = 0.06341 XTI = 8.194 
+ TNOM = 217.5 BV = 70 CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 
.MODEL DLIM D IS = 0.0001 
.MODEL DESD D IS = 2.728E-008 N = 66.22 BV = 5.068 
.ENDs
*Diodes DMN5L06K Spice Model v1.0 Last Revised 2013/2/18


*---------- DMN5L06TK Spice Model ----------
.SUBCKT DMN5L06TK 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 1.449 
RS 30 3 0.001 
RG 20 2 127 
DESD1 2 5 DESD 
DESD2 3 5 DESD 
CGS 2 3 2.688E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.189 TOX = 6E-008 NSUB = 1E+016 KP = 1.163 U0 = 400 KAPPA = 14.08 
.MODEL DCGD D CJO = 1.808E-011 VJ = 0.134 M = 0.369 
.MODEL DSUB D IS = 247.6E-9 N = 1.566 RS = 0.358 EG = 0.06341 XTI = 8.194 
+ TNOM = 217.5 BV = 70 CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 
.MODEL DLIM D IS = 0.0001 
.MODEL DESD D IS = 2.728E-008 N = 66.22 BV = 5.068 
.ENDs
*Diodes DMN5L06TK Spice Model v1.0 Last Revised 2013/2/18


*SRC=DMN5L06VK;DI_DMN5L06VK;MOSFETs N;Enh;50.0V 0.280A 2.00ohms  Diodes Inc MOSFET
.MODEL DI_DMN5L06VK  NMOS( LEVEL=1 VTO=1.00 KP=0.200  GAMMA=1.24
+ PHI=.75  LAMBDA=117u RD=0.280 RS=0.280
+ IS=140f  PB=0.800 MJ=0.460 CBD=98.8p 
+ CBS=119p  CGSO=60.0n CGDO=50.0n CGBO=390n  )
*   -- Assumes default L=100U W=100U --


*---------- DMN5L06WK Spice Model ----------
.SUBCKT DMN5L06WK 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 1.449 
RS 30 3 0.001 
RG 20 2 127 
DESD1 2 5 DESD 
DESD2 3 5 DESD 
CGS 2 3 2.688E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.189 TOX = 6E-008 NSUB = 1E+016 KP = 1.163 U0 = 400 KAPPA = 14.08 
.MODEL DCGD D CJO = 1.808E-011 VJ = 0.134 M = 0.369 
.MODEL DSUB D IS = 247.6E-9 N = 1.566 RS = 0.358 EG = 0.06341 XTI = 8.194 
+ TNOM = 217.5 BV = 70 CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 
.MODEL DLIM D IS = 0.0001 
.MODEL DESD D IS = 2.728E-008 N = 66.22 BV = 5.068 
.ENDs
*Diodes DMN5L06WK Spice Model v1.0 Last Revised 2013/2/18


*---------- DMN601DMK Spice Model ----------
.SUBCKT DMN601DMK 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 1.631 
RS 30 3 0.001 
RG 20 2 133 
CGS 2 3 2.711E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 2.628E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0  VTO = 1.596 
+ TOX = 6E-008  NSUB = 1.945E+017  KP = 1.196  KAPPA = 1E-015  U0 = 400  THETA = 5.648E-007 
.MODEL DCGD D  CJO = 2.628E-011  VJ = 0.6  M = 0.2561 
.MODEL DSUB D  IS = 2.05E-009  N = 1.698  RS = 0.1282  BV = 65  CJO = 6.226E-012  VJ = 1  M = 0.6474 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN601DMK Spice Model v1.0 Last Revised 2012/4/25


*---------- DMN601DWK Spice Model ----------
.SUBCKT DMN601DWK 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 1.631 
RS 30 3 0.001 
RG 20 2 133 
CGS 2 3 2.711E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 2.628E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0  VTO = 1.596 
+ TOX = 6E-008  NSUB = 1.945E+017  KP = 1.196  KAPPA = 1E-015  U0 = 400  THETA = 5.648E-007 
.MODEL DCGD D  CJO = 2.628E-011  VJ = 0.6  M = 0.2561 
.MODEL DSUB D  IS = 2.05E-009  N = 1.698  RS = 0.1282  BV = 65  CJO = 6.226E-012  VJ = 1  M = 0.6474 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN601DWK Spice Model v1.0 Last Revised 2012/4/25


*---------- DMN601K Spice Model ----------
.SUBCKT DMN601K 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 1.631 
RS 30 3 0.001 
RG 20 2 133 
CGS 2 3 2.711E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 2.628E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0  VTO = 1.596 
+ TOX = 6E-008  NSUB = 1.945E+017  KP = 1.196  KAPPA = 1E-015  U0 = 400  THETA = 5.648E-007 
.MODEL DCGD D  CJO = 2.628E-011  VJ = 0.6  M = 0.2561 
.MODEL DSUB D  IS = 2.05E-009  N = 1.698  RS = 0.1282  BV = 65  CJO = 6.226E-012  VJ = 1  M = 0.6474 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN601K Spice Model v1.0 Last Revised 2012/4/25


*---------- DMN601TK Spice Model ----------
.SUBCKT DMN601TK 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 1.631 
RS 30 3 0.001 
RG 20 2 133 
CGS 2 3 2.711E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 2.628E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0  VTO = 1.596 
+ TOX = 6E-008  NSUB = 1.945E+017  KP = 1.196  KAPPA = 1E-015  U0 = 400  THETA = 5.648E-007 
.MODEL DCGD D  CJO = 2.628E-011  VJ = 0.6  M = 0.2561 
.MODEL DSUB D  IS = 2.05E-009  N = 1.698  RS = 0.1282  BV = 65  CJO = 6.226E-012  VJ = 1  M = 0.6474 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN601TK Spice Model v1.0 Last Revised 2012/4/25


*---------- DMN601VK Spice Model ----------
.SUBCKT DMN601VK 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 1.631 
RS 30 3 0.001 
RG 20 2 133 
CGS 2 3 2.711E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 2.628E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0  VTO = 1.596 
+ TOX = 6E-008  NSUB = 1.945E+017  KP = 1.196  KAPPA = 1E-015  U0 = 400  THETA = 5.648E-007 
.MODEL DCGD D  CJO = 2.628E-011  VJ = 0.6  M = 0.2561 
.MODEL DSUB D  IS = 2.05E-009  N = 1.698  RS = 0.1282  BV = 65  CJO = 6.226E-012  VJ = 1  M = 0.6474 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN601VK Spice Model v1.0 Last Revised 2012/4/25


*---------- DMN601WK Spice Model ----------
.SUBCKT DMN601WK 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 1.631 
RS 30 3 0.001 
RG 20 2 133 
CGS 2 3 2.711E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 2.628E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0  VTO = 1.596 
+ TOX = 6E-008  NSUB = 1.945E+017  KP = 1.196  KAPPA = 1E-015  U0 = 400  THETA = 5.648E-007 
.MODEL DCGD D  CJO = 2.628E-011  VJ = 0.6  M = 0.2561 
.MODEL DSUB D  IS = 2.05E-009  N = 1.698  RS = 0.1282  BV = 65  CJO = 6.226E-012  VJ = 1  M = 0.6474 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN601WK Spice Model v1.0 Last Revised 2012/4/25


*SRC=DMN66D0LDW;DI_DMN66D0LDW;MOSFETs N;Enh;60.0V 0.115A 5.00ohms  Diodes Inc MOSFET
.MODEL DI_DMN66D0LDW  NMOS( LEVEL=1 VTO=2.00 KP=55.7m  GAMMA=2.48
+ PHI=.75  LAMBDA=69.6u RD=0.700 RS=0.700
+ IS=57.5f  PB=0.800 MJ=0.460 CBD=9.88p 
+ CBS=11.9p  CGSO=16.8n CGDO=14.0n CGBO=199n  )
*   -- Assumes default L=100U W=100U --


*SRC=DMN66D0LW;DI_DMN66D0LW;MOSFETs N;Enh;60.0V 0.115A 5.00ohms  Diodes Inc MOSFET
.MODEL DI_DMN66D0LW  NMOS( LEVEL=1 VTO=2.00 KP=55.7m  GAMMA=2.48
+ PHI=.75  LAMBDA=69.6u RD=0.700 RS=0.700
+ IS=57.5f  PB=0.800 MJ=0.460 CBD=9.88p 
+ CBS=11.9p  CGSO=16.8n CGDO=14.0n CGBO=199n  )
*   -- Assumes default L=100U W=100U --


*SRC=MMBF170;DI_MMBF170;MOSFETs N;Enh;60.0V 0.500A 2.10ohms  Diodes Inc. MOSFET 
.MODEL DI_MMBF170  NMOS( LEVEL=1 VTO=2.10 KP=18.8m  GAMMA=2.60 
+ PHI=.75  LAMBDA=1.04m RD=0.294 RS=0.294 
+ IS=250f  PB=0.800 MJ=0.460 CBD=29.8p 
+ CBS=35.8p  CGSO=24.0n CGDO=20.0n CGBO=176n  ) 
*   -- Assumes default L=100U W=100U --


*---------- DMN66D0LT Spice Model ----------
.SUBCKT DMN66D0LT 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 1.631 
RS 30 3 0.001 
RG 20 2 133 
CGS 2 3 2.711E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 2.628E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0  VTO = 1.596 
+ TOX = 6E-008  NSUB = 1.945E+017  KP = 1.196  KAPPA = 1E-015  U0 = 400  THETA = 5.648E-007 
.MODEL DCGD D  CJO = 2.628E-011  VJ = 0.009081  M = 0.2561 
.MODEL DSUB D  IS = 2.05E-009  N = 1.698  RS = 0.1282  BV = 65  CJO = 6.226E-012  VJ = 1  M = 0.6474 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN66D0LT Spice Model v1.0 Last Revised 2011/1/13


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=02/11/2009
*VERSION=1
*PIN_ORDER         D G S
*
.SUBCKT ZXMN6A08K 30 40 50
M1 6 2 5 5 Nmod L=1E-6 W=0.6
M2 5 2 5 6 Pmod L=1E-6 W=0.45
RG 4 2 4
RIN 2 5 1E12
RD 3 6 Rmod1 0.075
RL 6 5 10E9
C1 2 5 100E-12
C2 3 4 5E-12
D1 5 3  Dbodymod
LD 3 30 1E-9
LG 4 40 2.3E-9
LS 5 50 2.3E-9
.MODEL Nmod NMOS (LEVEL=3 TOX=5E-8 NSUB=2E17 VTO=2.25
+KP=1.8E-5 RS=0.009 NFS=2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10)
.MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=1E16
+TPG=-1 IS=1E-15 N=10)
.MODEL Dbodymod D (IS=2E-12 RS=0.025 IKF=0.06 TRS1=1.5e-3
+CJO=120e-12  BV=61)
.MODEL Rmod1 RES (TC1=6e-3 TC2=1.2E-5)
.ENDS ZXMN6A08K
*
*$


*DIODES_INC_SPICE_MODEL DMN6068LK3 N-channel MOSFET
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=21Dec2011
*VERSION=1
*PINS 10=D 20=G 30=S

.SUBCKT DMN6068 10 20 30
M1 1 2 3 3  Nmod1
RD 10 1 Rmod1 27E-3
RS 23 3 Rmod1 27E-3
RG 20 22 1.5
RIN 20 23 2E11
RDS 10 23 6E9
CGS 2 3 380E-12 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 426E-12 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 23 10  DSUB
EL 2 22 1 3 0.0015
LS  30 23 2n
.MODEL Nmod1 NMOS (LEVEL=3 VTO=3.4 TOX=6E-8 NSUB=2.8E+17 KP=155 NFS=8E+11 IS=1E-15 N=10)
.MODEL DCGD D (CJO = 244E-12  VJ = 0.5  M = 0.43 T_ABS=25)
.MODEL DSUB D (IS = .1E-10 N=1.1 RS=0.02 BV=66 CJO=330E-12 VJ=0.42 M=0.5 TT=145E-9 TRS1=2E-3)
.MODEL DLIM D (IS=100U N=1 T_ABS=25)
.MODEL Rmod1 RES (TC1=2e-3 TC2=6E-6)
.ENDS


*DIODES_INC_SPICE_MODEL DMN6066SSD N-channel MOSFET
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=29Nov2011
*VERSION=1

.SUBCKT DMN6066 10 20 30
M1 1 2 3 3  Nmod1
RD 10 1 Rmod1 27E-3
RS 23 3 Rmod1 27E-3
RG 20 22 1.5
RIN 20 23 2E11
RDS 10 23 6E9
CGS 2 3 420E-12 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 420E-12 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 23 10  DSUB
EL 2 22 1 3 0.0015
LS  30 23  3n
.MODEL Nmod1 NMOS (LEVEL=3 VTO=3.2 TOX=6E-8 NSUB=3E+17 KP=140 NFS=8E+11 IS=1E-15 N=10)
.MODEL DCGD D (CJO = 220E-12  VJ = 0.5  M = 0.43)
.MODEL DSUB D (IS = .1E-10 N=1.1 RS=0.02 BV=66 CJO=330E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=2E-3)
.MODEL DLIM D (IS=100U N=1)
.MODEL Rmod1 RES (TC1=2e-3 TC2=6E-6)
.ENDS

.SIMULATOR DEFAULT


*ZETEX VN10LF Spice Model v1.1 Last Revised 3/5/00
    *
    .SUBCKT VN10LF 3 4 5
    *              D G S
    M1 3 2 5 5 N3306M
    RG 4 2 270
    RL 3 5 1.2E8
    C1 2 5 28E-12
    C2 3 2 3E-12 
    D1 5 3 N3306D
    *
    .MODEL N3306M NMOS VTO=1.824 RS=1.572 RD=1.436 IS=1E-15 KP=.1233
    +CBD=35E-12 PB=1
    .MODEL N3306D D IS=5E-12 RS=.768
    .ENDS VN10LF
    *
    *$
    *


*---------- DMG1026UV Spice Model ----------
.SUBCKT DMG1026UV 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 1.188 
RS 30 3 0.001 
RG 20 2 127.7 
CGS 2 3 3.079E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 7.5E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 1.099 
+ TOX = 6E-008 NSUB = 1E+017 KP = 1.832 KAPPA = 1E-015 U0 = 400 
.MODEL DCGD D CJO = 1.712E-011 VJ = 0.6 M = 0.5004 
.MODEL DSUB D IS = 7.2E-007 N = 2.594 RS = 0.03889 
+ BV = 35 CJO = 4.301E-012 VJ = 0.2 M = 0.1735 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMG1026UV Spice Model v1.0 Last Revised 2014/6/6


*---------- DMN62D1SFB Spice Model ----------
.SUBCKT DMN62D1SFB 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.8574 
RS 30 3 0.001 
RG 20 2 81.24 
CGS 2 3 3.774E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 8.43E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8E+005  ETA = 0.001  VTO = 1.584 
+ TOX = 6E-008  NSUB = 1E+016  KP = 0.9918  U0 = 400  KAPPA = 1 
.MODEL DCGD D  CJO = 2.818E-011  VJ = 0.4  M = 0.5368 
.MODEL DSUB D  IS = 6.562E-012  N = 1.326  RS = 0.08305  BV = 65  CJO = 5.117E-012  VJ = 0.4  M = 0.6 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN62D1SFB Spice Model v1.0 Last Revised 2015/2/26


*---------- DMN4031SSD Spice Model ----------
.SUBCKT DMN4031SSD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.001 
RS 30 3 0.009995 
RG 20 2 1.56 
CGS 2 3 8.311E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 9.4E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0.001  VTO = 3.195 
+ TOX = 6E-008  NSUB = 1E+016  KP = 26.57  U0 = 400  KAPPA = 32.33 
.MODEL DCGD D  CJO = 3.144E-010  VJ = 0.09587  M = 0.3239 
.MODEL DSUB D  IS = 1.133E-011  N = 1.136  RS = 1.044E-015  BV = 40  CJO = 1.281E-010  VJ = 0.3722  M = 0.5383 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN4031SSD Spice Model v1.0 Last Revised 2011/8/15


*---------- BSN20 Spice Model ----------
.SUBCKT BSN20 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.9338 
RS 30 3 0.001 
RG 20 2 47 
CGS 2 3 1.906E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 4.9E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 1E-012 VTO = 1.422 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.5025 U0 = 400 KAPPA = 7.117 
.MODEL DCGD D CJO = 9.463E-012 VJ = 6.446 M = 0.9816 
.MODEL DSUB D IS = 7.582E-010 N = 1.586 RS = 0.1976 
+ BV = 65 CJO = 1.173E-011 VJ = 0.03727 M = 0.2868 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes BSN20 Spice Model v1.0 Last Revised 2012/8/22


*DIODES_INC_SPICE_MODEL DMN62D0LFB N-channel MOSFET
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=07Aug2012
*VERSION=1

.SUBCKT DMN62D0LFB 10 20 30
M1 1 2 3 3  Nmod1
RD 10 1 Rmod1 1.1
RS 23 3 Rmod1 .3
RG 20 22 126
RIN 20 23 2E11
RDS 10 23 6E9
CGS 2 3 40E-12 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 40E-12 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 23 10  DSUB
EL 2 22 1 3 0.003
LS  30 23  3n
.MODEL Nmod1 NMOS (LEVEL=3 VTO=1.15 TOX=5E-8 NSUB=3E+15 KP=3.8 NFS=12E+11 IS=1E-15 N=10)
.MODEL DCGD D (CJO = 15E-12  VJ = 0.5  M = 0.43 T_ABS=25)
.MODEL DSUB D (IS = 5E-13 N=1.1 RS=0.06 BV=66 CJO=33E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=2E-3)
.MODEL DLIM D (IS=100U N=1 T_ABS=25)
.MODEL Rmod1 RES (TC1=.1e-3 TC2=6E-6)
.ENDS


*---------- DMN65D8LDW Spice Model ----------
.SUBCKT DMN65D8LDW 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 2.175 
RS 30 3 0.001 
RG 20 2 79.9 
DESD1 2 5 DESD 
DESD2 3 5 DESD 
CGS 2 3 2.011E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5.9E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.595 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.58 U0 = 400 KAPPA = 4.069 
.MODEL DCGD D CJO = 1.646E-011 VJ = 0.1277 M = 0.4 
.MODEL DSUB D IS = 4.551E-009 N = 1.836 RS = 0.1357 
+ CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 
.MODEL DLIM D IS = 0.0001 
.MODEL DESD D IS = 1.223E-008 N = 54.79 BV = 5.385 
.ENDS
*Diodes DMN65D8LDW Spice Model v1.0 Last Revised 2012/7/23


*---------- DMN65D8LFB Spice Model ----------
.SUBCKT DMN65D8LFB 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 2.175 
RS 30 3 0.001 
RG 20 2 79.9 
DESD1 2 5 DESD 
DESD2 3 5 DESD 
CGS 2 3 2.011E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5.9E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.595 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.58 U0 = 400 KAPPA = 4.069 
.MODEL DCGD D CJO = 1.646E-011 VJ = 0.1277 M = 0.4 
.MODEL DSUB D IS = 4.551E-009 N = 1.836 RS = 0.1357 
+ CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 
.MODEL DLIM D IS = 0.0001 
.MODEL DESD D IS = 1.223E-008 N = 54.79 BV = 5.385 
.ENDS
*Diodes DMN65D8LFB Spice Model v1.0 Last Revised 2012/7/23


*---------- DMN6040SVT Spice Model ----------
.SUBCKT DMN6040SVT 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.02611 
RS 30 3 0.001 
RG 20 2 1.18 
CGS 2 3 1.277E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 7.5E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8E+005  ETA = 0.01616  VTO = 2.642 
+ TOX = 6E-008  NSUB = 1E+016  KP = 47.18  U0 = 400  KAPPA = 1 
.MODEL DCGD D  CJO = 3.638E-010  VJ = 0.3003  M = 0.4785 
.MODEL DSUB D  IS = 1.146E-011  N = 1.109  RS = 0.008602  BV = 65  CJO = 1.445E-010  VJ = 0.3616  M = 0.5674 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN6040SVT Spice Model v1.0 Last Revised 2012/3/26


*---------- DMN65D8LW Spice Model ----------
.SUBCKT DMN65D8LW 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 2.175 
RS 30 3 0.001 
RG 20 2 79.9 
DESD1 2 5 DESD 
DESD2 3 5 DESD 
CGS 2 3 2.011E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5.9E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.595 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.58 U0 = 400 KAPPA = 4.069 
.MODEL DCGD D CJO = 1.646E-011 VJ = 0.1277 M = 0.4 
.MODEL DSUB D IS = 4.551E-009 N = 1.836 RS = 0.1357 
+ CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 
.MODEL DLIM D IS = 0.0001 
.MODEL DESD D IS = 1.223E-008 N = 54.79 BV = 5.385 
.ENDS
*Diodes DMN65D8LW Spice Model v1.0 Last Revised 2012/7/23


*---------- DMN6040SFDE Spice Model ----------
.SUBCKT DMN6040SFDE 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.02611 
RS 30 3 0.001 
RG 20 2 1.18 
CGS 2 3 1.277E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 7.5E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8E+005  ETA = 0.01616  VTO = 2.642 
+ TOX = 6E-008  NSUB = 1E+016  KP = 47.18  U0 = 400  KAPPA = 1 
.MODEL DCGD D  CJO = 3.638E-010  VJ = 0.3003  M = 0.4785 
.MODEL DSUB D  IS = 1.146E-011  N = 1.109  RS = 0.008602  BV = 65  CJO = 1.445E-010  VJ = 0.3616  M = 0.5674 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN6040SFDE Spice Model v1.0 Last Revised 2012/11/30


*---------- DMN6040SSD Spice Model ----------
.SUBCKT DMN6040SSD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.02611 
RS 30 3 0.001 
RG 20 2 1.18 
CGS 2 3 1.277E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 7.5E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8E+005  ETA = 0.01616  VTO = 2.642 
+ TOX = 6E-008  NSUB = 1E+016  KP = 47.18  U0 = 400  KAPPA = 1 
.MODEL DCGD D  CJO = 3.638E-010  VJ = 0.3003  M = 0.4785 
.MODEL DSUB D  IS = 1.146E-011  N = 1.109  RS = 0.008602  BV = 65  CJO = 1.445E-010  VJ = 0.3616  M = 0.5674 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN6040SSD Spice Model v1.0 Last Revised 2012/11/30


*---------- DMN6040SSS Spice Model ----------
.SUBCKT DMN6040SSS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.02611 
RS 30 3 0.001 
RG 20 2 1.18 
CGS 2 3 1.277E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 7.5E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8E+005  ETA = 0.01616  VTO = 2.642 
+ TOX = 6E-008  NSUB = 1E+016  KP = 47.18  U0 = 400  KAPPA = 1 
.MODEL DCGD D  CJO = 3.638E-010  VJ = 0.3003  M = 0.4785 
.MODEL DSUB D  IS = 1.146E-011  N = 1.109  RS = 0.008602  BV = 65  CJO = 1.445E-010  VJ = 0.3616  M = 0.5674 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN6040SSS Spice Model v1.0 Last Revised 2012/11/30


*---------- DMN65D8L Spice Model ----------
.SUBCKT DMN65D8L 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 2.175 
RS 30 3 0.001 
RG 20 2 79.9 
DESD1 2 5 DESD 
DESD2 3 5 DESD 
CGS 2 3 2.011E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5.9E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.595 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.58 U0 = 400 KAPPA = 4.069 
.MODEL DCGD D CJO = 1.646E-011 VJ = 0.1277 M = 0.4 
.MODEL DSUB D IS = 4.551E-009 N = 1.836 RS = 0.1357 
+ CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 
.MODEL DLIM D IS = 0.0001 
.MODEL DESD D IS = 1.223E-008 N = 54.79 BV = 5.385 
.ENDS
*Diodes DMN65D8L Spice Model v1.0 Last Revised 2012/7/23


*---------- DMN6040SK3 Spice Model ----------
.SUBCKT DMN6040SK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.02611 
RS 30 3 0.001 
RG 20 2 1.18 
CGS 2 3 1.277E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 7.5E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8E+005  ETA = 0.01616  VTO = 2.642 
+ TOX = 6E-008  NSUB = 1E+016  KP = 47.18  U0 = 400  KAPPA = 1 
.MODEL DCGD D  CJO = 3.638E-010  VJ = 0.3003  M = 0.4785 
.MODEL DSUB D  IS = 1.146E-011  N = 1.109  RS = 0.008602  BV = 65  CJO = 1.445E-010  VJ = 0.3616  M = 0.5674 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN6040SK3 Spice Model v1.0 Last Revised 2013/04/17


*---------- DMN62D0LFD Spice Model ----------
.SUBCKT DMN62D0LFD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 1.631 
RS 30 3 0.001 
RG 20 2 133 
CGS 2 3 2.79E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 3.4E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0  VTO = 1.596 
+ TOX = 6E-008  NSUB = 1.945E+017  KP = 1.196  KAPPA = 1E-015  U0 = 400  THETA = 5.648E-007 
.MODEL DCGD D  CJO = 1.283E-011  VJ = 0.6  M = 0.4065 
.MODEL DSUB D  IS = 2.05E-009  N = 1.698  RS = 0.1282  BV = 65  CJO = 8.365E-012  VJ = 0.7198  M = 0.6 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN62D0LFD Spice Model v1.1 Last Revised 2014/12/8


*---------- DMN4026SSD Spice Model ----------
.SUBCKT DMN4026SSD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.008754 
RS 30 3 0.001 
RG 20 2 1.7 
CGS 2 3 1.04E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 6.6E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 2.455 
+ TOX = 6E-008 NSUB = 1E+017 KP = 49.07 KAPPA = 1E-015 U0 = 400 
.MODEL DCGD D CJO = 2.703E-010 VJ = 0.2734 M = 0.3551 
.MODEL DSUB D IS = 2.278E-010 N = 1.242 RS = 0.007361 
+ BV = 50 CJO = 2.302E-010 VJ = 0.3812 M = 0.5232 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMN4026SSD Spice Model v1.0 Last Revised 2014/2/5


*---------- DMN6140L Spice Model ----------
.SUBCKT DMN6140L 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.06658 
RS 30 3 0.001 
RG 20 2 0.65 
CGS 2 3 3.184E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 4.4E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 5.378E+005  ETA = 0.001 
+ VTO = 1.88  TOX = 6E-008  NSUB = 1E+016  KP = 5.783  U0 = 400  KAPPA = 10 
.MODEL DCGD D  CJO = 1.846E-010  VJ = 0.6  M = 0.6135 
.MODEL DSUB D  IS = 2.247E-010  N = 1.308  RS = 0.02648  BV = 65  CJO = 6.828E-012  VJ = 0.7  M = 0.6 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN6140L Spice Model v1.0 Last Revised 2014/11/14


*---------- DMN4010LFG Spice Model ----------
.SUBCKT DMN4010LFG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.005483 
RS 30 3 0.001 
RG 20 2 1.64 
CGS 2 3 1.736E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.58E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 2.274
+ TOX = 6E-008 NSUB = 1E+017 KP = 95.33 KAPPA = 24.52 U0 = 400 
.MODEL DCGD D CJO = 8.624E-010 VJ = 0.3663 M = 0.4967 
.MODEL DSUB D IS = 2.495E-010 N = 1.227 RS = 0.003519 
+ BV = 45 CJO = 7.592E-010 VJ = 0.3012 M = 0.5211 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN4010LFG  Spice Model v1.0 Last Revised 2014/8/04


*---------- DMN6013LFG Spice Model ----------
.SUBCKT DMN6013LFG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.005556 
RS 30 3 0.001 
RG 20 2 1.49 
CGS 2 3 2.658E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.56E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.766 
+ TOX = 6E-008 NSUB = 1E+016 KP = 67.2 U0 = 400 KAPPA = 38.59 
.MODEL DCGD D CJO = 1.231E-009 VJ = 0.6368 M = 0.5502 
.MODEL DSUB D IS = 5E-011 N = 1.108 RS = 0.002574 
+ BV = 70 CJO = 5.209E-010 VJ = 0.9791 M = 0.89 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN6013LFG Spice Model v1.0 Last Revised 2014/9/15


*---------- DMT6016LSS Spice Model ----------
.SUBCKT DMT6016LSS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.008248 
RS 30 3 0.001 
RG 20 2 1.35 
CGS 2 3 8.551E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 6E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8E+005  ETA = 0.001  VTO = 2.685 
+ TOX = 6E-008  NSUB = 1E+016  KP = 44  U0 = 400  KAPPA = 1 
.MODEL DCGD D  CJO = 3.956E-010  VJ = 0.8  M = 0.6557 
.MODEL DSUB D  IS = 3.752E-008  N = 1.624  RS = 0.005938  BV = 65  CJO = 5.236E-010  VJ = 1  M = 0.2051 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMT6016LSS Spice Model v1.0 Last Revised 2014/12/19


*---------- DMT6016LPS Spice Model ----------
.SUBCKT DMT6016LPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.006728 
RS 30 3 0.001 
RG 20 2 1.35 
CGS 2 3 8.475E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 6E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.61 
+ TOX = 6E-008 NSUB = 1E+016 KP = 37.72 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 3.945E-010 VJ = 0.8 M = 0.6507 
.MODEL DSUB D IS = 2.448E-010 N = 1.248 RS = 0.006471 BV = 60 CJO = 5.274E-010 VJ = 0.8 M = 0.6 TT=2.2E-010
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT6016LPS Spice Model v1.0 Last Revised 2015/11/10


*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=17/12/2014
*VERSION=1


.SUBCKT DMN6016LFDF 10 20 30
M1 1 2 3 3  Nmod1 
RD 10 1 Rmod1 6E-3
RS 23 3 Rmod1 6E-3
RG 20 22 1.5
RIN 20 23 2E11
RDS 10 23 6E9
CGS 2 3 740E-12 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 660E-12 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 23 10  DSUB
EL 2 22 1 3 0.00015
LS  30 23  3n
.MODEL Nmod1 NMOS (LEVEL=3 VTO=2.77 TOX=7.5E-8 NSUB=7.5E+16 KP=120 NFS=7E+11 IS=.5E-15 N=10)
.MODEL DCGD D (CJO = 320E-12  VJ = 0.42  M = 0.4 T_ABS=25)
.MODEL DSUB D (IS = .1E-10 N=1.1 RS=0.004 BV=66 CJO=500E-12 VJ=0.42 M=0.5 TT=18E-9 TRS1=2E-3 IKF=10)
.MODEL DLIM D (IS=100U N=1 T_ABS=25)
.MODEL Rmod1 RES (TC1=1.5e-3 TC2=6E-6)


*---------- DMT6009LFG Spice Model ----------
.SUBCKT DMT6009LFG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.006099 
RS 30 3 1E-008 
RG 20 2 1.71 
CGS 2 3 2.016E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.086 
+ TOX = 6E-008 NSUB = 1E+016 KP = 136.4 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 4.367E-010 VJ = 1 M = 0.5797 
.MODEL DSUB D IS = 2.239E-010 N = 1.183 RS = 0.005972 BV = 67 CJO = 8.953E-010 VJ = 1 M = 0.201 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT6009LFG  Spice Model v1.0 Last Revised 2015/7/27


*---------- DMNH4011SK3 Spice Model ----------
.SUBCKT DMNH4011SK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.004592 
RS 30 3 0.001 
RG 20 2 2.19 
CGS 2 3 1.266E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 9E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.749 
+ TOX = 6E-008 NSUB = 1E+016 KP = 48.89 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 8.203E-010 VJ = 0.6 M = 0.6 
.MODEL DSUB D IS = 2.926E-010 N = 1.193 RS = 0.001056 BV = 55 CJO = 8.778E-010 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMNH4011SK3 Spice Model v1.0 Last Revised 2015/06/05



*---------- DMN6069SFG Spice Model ----------
.SUBCKT DMN6069SFG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.03539 
RS 30 3 1E-008 
RG 20 2 2.16 
CGS 2 3 7.47E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5.1E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.641 
+ TOX = 6E-008 NSUB = 1E+016 KP = 36.47 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 2.225E-010 VJ = 0.3984 M = 0.4935 
.MODEL DSUB D IS = 2.365E-010 N = 1.257 RS = 0.006622 BV = 72 CJO = 2.225E-010 VJ = 0.1191 M = 0.564 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN6069SFG  Spice Model v1.0 Last Revised 2015/8/03


*DIODES_INC_SPICE_MODEL DMN61D8LQ N-channel MOSFET
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=24/08/2015
*VERSION=1


"**Pin order:  Drain=10, Gate=50, Source=30"
.SUBCKT DMN61D8LQ 10 50 30
M1 1 2 3 3  Nmod1
RD 10 1 Rmod1 1.02
RS 23 3 Rmod1 .08
RG 20 22 50
RIN 20 23 2E11
RDS 10 23 6E9
CGS 2 3 30E-12 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 40E-12 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 23 10  DSUB
EL 2 22 1 3 0.022
LS  30 23  1n



*ESD and Clamp structures
Dclamp1 10 55 Dclamp
Dclamp2 20 55 Dclamp
Desd1 20 60 DESD
Desd2 30 60 DESD
RgateS 50 20 5.5K
RgateP 50 30 100K
Desd3 50 40 DESD
Desd4 30 40 DESD


.MODEL Nmod1 NMOS (LEVEL=3 VTO=1.65 TOX=4.1E-8 NSUB=2E+17 KP=2 NFS=1E+10 IS=1E-15 N=10)
.MODEL DCGD D (CJO =30E-12  VJ = 0.5  M = 0.43 T_ABS=25)
.MODEL DSUB D (IS = 2E-13 N=1 RS=0.06 BV=80 IKF=50m CJO=100E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=1E-3 EG=1.09)
.MODEL DLIM D (IS=100U N=1 T_ABS=25)
.MODEL Rmod1 RES (TC1=.05e-3 TC2=12E-6)

*ESD and CLAMP DIoDES

.model DESD  D(IS=.150f RS=1m BV=12 Ibv=10u)
.model Dclamp D(IS=.160f RS=1m BV=60 Ibv=10u)
.ENDS





*                (c)  2015 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
"*   to Diodes Incorporated ("" Zetex "").  They  are  supplied"
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
"*   in respect of any use is accepted by Diodes Incorporated, its distributors"
*   or agents.
*
"*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,"
"*   Oldham, United Kingdom, OL9 9LL"
*




*DIODES_INC_SPICE_MODEL DMN61D8L N-channel MOSFET
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=24/08/2015
*VERSION=1


**Pin order:  Drain=10, Gate=50, Source=30
.SUBCKT DMN61D8L 10 50 30
M1 1 2 3 3  Nmod1
RD 10 1 Rmod1 1.02
RS 23 3 Rmod1 .08
RG 20 22 50
RIN 20 23 2E11
RDS 10 23 6E9
CGS 2 3 30E-12 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 40E-12 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 23 10  DSUB
EL 2 22 1 3 0.022
LS  30 23  1n



*ESD and Clamp structures
Dclamp1 10 55 Dclamp
Dclamp2 20 55 Dclamp
Desd1 20 60 DESD
Desd2 30 60 DESD
RgateS 50 20 5.5K
RgateP 50 30 100K
Desd3 50 40 DESD
Desd4 30 40 DESD


.MODEL Nmod1 NMOS (LEVEL=3 VTO=1.65 TOX=4.1E-8 NSUB=2E+17 KP=2 NFS=1E+10 IS=1E-15 N=10)
.MODEL DCGD D (CJO =30E-12  VJ = 0.5  M = 0.43 T_ABS=25)
.MODEL DSUB D (IS = 2E-13 N=1 RS=0.06 BV=80 IKF=50m CJO=100E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=1E-3 EG=1.09)
.MODEL DLIM D (IS=100U N=1 T_ABS=25)
.MODEL Rmod1 RES (TC1=.05e-3 TC2=12E-6)

*ESD and CLAMP DIoDES

.model DESD  D(IS=.150f RS=1m BV=12 Ibv=10u)
.model Dclamp D(IS=.160f RS=1m BV=60 Ibv=10u)
.ENDS





*                (c)  2015 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*








*---------- DMT6004LPS Spice Model ----------
.SUBCKT DMT6004LPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.0001798 
RS 30 3 0.001659 
RG 20 2 0.64 
CGS 2 3 4.923E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 3.7E-009 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8E+005  ETA = 0.001  VTO = 2.095 
+ TOX = 6E-008  NSUB = 1E+016  KP = 287.2  U0 = 400  KAPPA = 4.441E-010 
.MODEL DCGD D  CJO = 1.864E-009  VJ = 1  M = 0.7538 
.MODEL DSUB D  IS = 1.026E-008  N = 1.357  RS = 4.441E-010  BV = 65  CJO = 3E-009  VJ = 0.8  M = 0.3 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMT6004LPS Spice Model v1.0 Last Revised 2015/6/5



*---------- DMTH4004SPSQ Spice Model ----------
.SUBCKT DMTH4004SPSQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001299 
RS 30 3 0.001 
RG 20 2 0.77 
CGS 2 3 4.614E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.5E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.189 
+ TOX = 6E-008 NSUB = 1E+016 KP = 66.04 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 5.071E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 9.177E-009 N = 1.352 RS = 9.544E-005 BV = 50 CJO = 6.893E-010 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH4004SPSQ Spice Model v2.0 Last Revised 2015/11/16


*---------- DMNH4006SK3 Spice Model ----------
.SUBCKT DMNH4006SK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001 
RS 30 3 0.001 
RG 20 2 1.7 
CGS 2 3 2.157E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.1E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.15 
+ TOX = 6E-008 NSUB = 1E+016 KP = 47.64 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.275E-009 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.252E-010 N = 1.153 RS = 0.001541 BV = 40 CJO = 1.897E-009 VJ = 0.7999 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH4006SK3 Spice Model v1.0 Last Revised 2015/9/10


*---------- DMTH6010LK3 Spice Model ----------
.SUBCKT DMTH6010LK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.004229 
RS 30 3 0.001 
RG 20 2 0.59 
CGS 2 3 2.15E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.58E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.161 
+ TOX = 6E-008 NSUB = 1E+016 KP = 161.3 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 9.443E-010 VJ = 1 M = 0.9231 
.MODEL DSUB D IS = 3.582E-010 N = 1.161 RS = 0.004476 BV = 72.8 CJO = 1.69E-009 VJ = 1 M = 0.9352 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH6010LK3  Spice Model v1.0 Last Revised 2015/6/15



*---------- DMTH6004SPS Spice Model ----------
.SUBCKT DMTH6004SPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001226 
RS 30 3 1E-008 
RG 20 2 0.66 
CGS 2 3 4.957E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 3.8E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.661 
+ TOX = 6E-008 NSUB = 1E+016 KP = 76.21 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 1.182E-009 VJ = 1 M = 0.6256 
.MODEL DSUB D IS = 5.527E-010 N = 1.203 RS = 0.002268 BV = 64 CJO = 2.894E-009 VJ = 1 M = 0.2266 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH6004SPS  Spice Model v1.0 Last Revised 2015/10/01



*---------- DMTH6010LPS Spice Model ----------
.SUBCKT DMTH6010LPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.004229 
RS 30 3 0.001 
RG 20 2 0.59 
CGS 2 3 2.15E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.58E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.161 
+ TOX = 6E-008 NSUB = 1E+016 KP = 161.3 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 9.443E-010 VJ = 1 M = 0.9231 
.MODEL DSUB D IS = 3.582E-010 N = 1.161 RS = 0.004476 BV = 72.8 CJO = 1.69E-009 VJ = 1 M = 0.9352 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH6010LPS  Spice Model v1.0 Last Revised 2015/6/15


*---------- DMTH6004SCTB Spice Model ----------
.SUBCKT DMTH6004SCTB 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001226 
RS 30 3 1E-008 
RG 20 2 0.66 
CGS 2 3 4.957E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 3.8E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.661 
+ TOX = 6E-008 NSUB = 1E+016 KP = 76.21 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 1.182E-009 VJ = 1 M = 0.6256 
.MODEL DSUB D IS = 5.527E-010 N = 1.203 RS = 0.002268 BV = 64 CJO = 2.894E-009 VJ = 1 M = 0.2266 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH6004SCTB  Spice Model v1.0 Last Revised 2015/10/01


---------- DMTH4007SPS Spice Model ----------
.SUBCKT DMTH4007SPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.002288 
RS 30 3 0.001 
RG 20 2 0.46 
CGS 2 3 2.042E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.7E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.513 
+ TOX = 6E-008 NSUB = 1E+016 KP = 100 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 1.098E-009 VJ = 1 M = 0.9231 
.MODEL DSUB D IS = 2.333E-010 N = 1.213 RS = 0.0009699 BV = 72.8 CJO = 1.33E-009 VJ = 1 M = 0.1934 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH4007SPS  Spice Model v1.0 Last Revised 2015/6/15


*---------- DMT6009LK3 Spice Model ----------
.SUBCKT DMT6009LK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.006099 
RS 30 3 1E-008 
RG 20 2 1.71 
CGS 2 3 2.016E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.086 
+ TOX = 6E-008 NSUB = 1E+016 KP = 136.4 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 4.367E-010 VJ = 1 M = 0.5797 
.MODEL DSUB D IS = 2.239E-010 N = 1.183 RS = 0.005972 BV = 67 CJO = 8.953E-010 VJ = 1 M = 0.201 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT6009LK3 Spice Model v1.0 Last Revised 2015/7/27


*---------- DMT6015LPS Spice Model ----------
.SUBCKT DMT6015LPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.008244 
RS 30 3 0.001 
RG 20 2 1.48 
CGS 2 3 1.107E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 6E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.997 
+ TOX = 6E-008 NSUB = 1E+016 KP = 40.42 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 3.204E-010 VJ = 0.8 M = 0.6777 
.MODEL DSUB D IS = 1.257E-009 N = 1.322 RS = 0.005675 BV = 60 CJO = 5.719E-010 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT6015LPS Spice Model v1.0 Last Revised 2015/10/27


*DIODES_INC_SPICE_MODEL DMN61D8LVTQ N-channel MOSFET
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=24/08/2015
*VERSION=1


"**Pin order:  Drain=10, Gate=50, Source=30"
.SUBCKT DMN61D8LVTQ 10 50 30
M1 1 2 3 3  Nmod1
RD 10 1 Rmod1 1.02
RS 23 3 Rmod1 .08
RG 20 22 50
RIN 20 23 2E11
RDS 10 23 6E9
CGS 2 3 30E-12 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 40E-12 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 23 10  DSUB
EL 2 22 1 3 0.022
LS  30 23  1n



*ESD and Clamp structures
Dclamp1 10 55 Dclamp
Dclamp2 20 55 Dclamp
Desd1 20 60 DESD
Desd2 30 60 DESD
RgateS 50 20 5.5K
RgateP 50 30 100K
Desd3 50 40 DESD
Desd4 30 40 DESD


.MODEL Nmod1 NMOS (LEVEL=3 VTO=1.65 TOX=4.1E-8 NSUB=2E+17 KP=2 NFS=1E+10 IS=1E-15 N=10)
.MODEL DCGD D (CJO =30E-12  VJ = 0.5  M = 0.43 T_ABS=25)
.MODEL DSUB D (IS = 2E-13 N=1 RS=0.06 BV=80 IKF=50m CJO=100E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=1E-3 EG=1.09)
.MODEL DLIM D (IS=100U N=1 T_ABS=25)
.MODEL Rmod1 RES (TC1=.05e-3 TC2=12E-6)

*ESD and CLAMP DIoDES

.model DESD  D(IS=.150f RS=1m BV=12 Ibv=10u)
.model Dclamp D(IS=.160f RS=1m BV=60 Ibv=10u)
.ENDS





*                (c)  2015 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
"*   to Diodes Incorporated ("" Zetex "").  They  are  supplied"
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
"*   in respect of any use is accepted by Diodes Incorporated, its distributors"
*   or agents.
*
"*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,"
"*   Oldham, United Kingdom, OL9 9LL"
*



*---------- DMTH4005SPSQ Spice Model ----------
.SUBCKT DMTH4005SPSQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 9.814E-005 
RS 30 3 0.001 
RG 20 2 0.67 
CGS 2 3 2.961E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.3E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.117 
+ TOX = 6E-008 NSUB = 1E+016 KP = 46.39 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.053E-009 VJ = 0.8 M = 0.6001 
.MODEL DSUB D IS = 1.159E-009 N = 1.284 RS = 0.0003205 BV = 40 CJO = 1.784E-009 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH4005SPSQ Spice Model v1.0 Last Revised 2015/8/19


*---------- DMTH6005LPSQ Spice Model ----------
.SUBCKT DMTH6005LPSQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.003586 
RS 30 3 1E-008 
RG 20 2 0.66 
CGS 2 3 3.195E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.3E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.272 
+ TOX = 6E-008 NSUB = 1E+016 KP = 222.2 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 5.577E-010 VJ = 1 M = 0.9082 
.MODEL DSUB D IS = 4.976E-010 N = 1.224 RS = 0.001644 BV = 70 CJO = 2.885E-009 VJ = 1 M = 0.9133 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH6005LPSQ  Spice Model v1.0 Last Revised 2015/11/10


---------- DMTH4007SPSQ Spice Model ----------
.SUBCKT DMTH4007SPSQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.002288 
RS 30 3 0.001 
RG 20 2 0.46 
CGS 2 3 2.042E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.7E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.513 
+ TOX = 6E-008 NSUB = 1E+016 KP = 100 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 1.098E-009 VJ = 1 M = 0.9231 
.MODEL DSUB D IS = 2.333E-010 N = 1.213 RS = 0.0009699 BV = 72.8 CJO = 1.33E-009 VJ = 1 M = 0.1934 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH4007SPSQ  Spice Model v1.0 Last Revised 2015/11/12



*---------- DMT6009LSS Spice Model ----------
.SUBCKT DMT6009LSS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.006099 
RS 30 3 1E-008 
RG 20 2 1.71 
CGS 2 3 2.016E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.086 
+ TOX = 6E-008 NSUB = 1E+016 KP = 136.4 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 4.367E-010 VJ = 1 M = 0.5797 
.MODEL DSUB D IS = 2.239E-010 N = 1.183 RS = 0.005972 BV = 67 CJO = 8.953E-010 VJ = 1 M = 0.201 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT6009LSS  Spice Model v1.0 Last Revised 2015/10/22


*---------- DMN61D9UDW Spice Model ----------
.SUBCKT DMN61D9UDW 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 1.449 
RS 30 3 0.001 
RG 20 2 127 
DESD1 2 5 DESD 
DESD2 3 5 DESD 
CGS 2 3 2.688E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.189 TOX = 6E-008 NSUB = 1E+016 KP = 1.163 U0 = 400 KAPPA = 14.08 
.MODEL DCGD D CJO = 1.808E-011 VJ = 0.134 M = 0.369 
.MODEL DSUB D IS = 247.6E-9 N = 1.566 RS = 0.358 EG = 0.06341 XTI = 8.194 
+ TNOM = 217.5 BV = 70 CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 
.MODEL DLIM D IS = 0.0001 
.MODEL DESD D IS = 2.728E-008 N = 66.22 BV = 5.068 
.ENDs
*Diodes DMN61D9UDW Spice Model v1.0 Last Revised 2015/7/3


*---------- DMN61D9U Spice Model ----------
.SUBCKT DMN61D9U 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 1.449 
RS 30 3 0.001 
RG 20 2 127 
DESD1 2 5 DESD 
DESD2 3 5 DESD 
CGS 2 3 2.688E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.189 TOX = 6E-008 NSUB = 1E+016 KP = 1.163 U0 = 400 KAPPA = 14.08 
.MODEL DCGD D CJO = 1.808E-011 VJ = 0.134 M = 0.369 
.MODEL DSUB D IS = 247.6E-9 N = 1.566 RS = 0.358 EG = 0.06341 XTI = 8.194 
+ TNOM = 217.5 BV = 70 CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 
.MODEL DLIM D IS = 0.0001 
.MODEL DESD D IS = 2.728E-008 N = 66.22 BV = 5.068 
.ENDs
*Diodes DMN61D9U Spice Model v1.0 Last Revised 2015/7/3


*---------- DMTH6005LPS Spice Model ----------
.SUBCKT DMTH6005LPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.003586 
RS 30 3 1E-008 
RG 20 2 0.66 
CGS 2 3 3.195E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.3E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.272 
+ TOX = 6E-008 NSUB = 1E+016 KP = 222.2 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 5.577E-010 VJ = 1 M = 0.9082 
.MODEL DSUB D IS = 4.976E-010 N = 1.224 RS = 0.001644 BV = 70 CJO = 2.885E-009 VJ = 1 M = 0.9133 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH6005LPS  Spice Model v1.0 Last Revised 2015/8/17


*---------- DMTH6004SCTBQ Spice Model ----------
.SUBCKT DMTH6004SCTBQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001226 
RS 30 3 1E-008 
RG 20 2 0.66 
CGS 2 3 4.957E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 3.8E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.661 
+ TOX = 6E-008 NSUB = 1E+016 KP = 76.21 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 1.182E-009 VJ = 1 M = 0.6256 
.MODEL DSUB D IS = 5.527E-010 N = 1.203 RS = 0.002268 BV = 64 CJO = 2.894E-009 VJ = 1 M = 0.2266 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH6004SCTBQ  Spice Model v1.0 Last Revised 2015/10/01


*---------- DMN63D1LDW Spice Model ----------
.SUBCKT DMN63D1LDW 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 1.631 
RS 30 3 0.001 
RG 20 2 133 
CGS 2 3 2.711E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 2.628E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0  VTO = 1.596 
+ TOX = 6E-008  NSUB = 1.945E+017  KP = 1.196  KAPPA = 1E-015  U0 = 400  THETA = 5.648E-007 
.MODEL DCGD D  CJO = 2.628E-011  VJ = 0.6  M = 0.2561 
.MODEL DSUB D  IS = 2.05E-009  N = 1.698  RS = 0.1282  BV = 65  CJO = 6.226E-012  VJ = 1  M = 0.6474 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN63D1LDW Spice Model v1.0 Last Revised 2015/7/1


*---------- DMN67D8LDW Spice Model ----------
.SUBCKT DMN67D8L 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.764 
RS 30 3 0.001 
RG 20 2 120 
CGS 2 3 1.982E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5.95E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.951 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.3344 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.046E-011 VJ = 0.2615 M = 0.3137 
.MODEL DSUB D IS = 6.246E-010 N = 1.568 RS = 0.1544 BV = 75 CJO = 9.897E-012 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN67D8LDW Spice Model v1.0 Last Revised 2015/7/14


*---------- DMN67D8LW Spice Model ----------
.SUBCKT DMN67D8L 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.764 
RS 30 3 0.001 
RG 20 2 120 
CGS 2 3 1.982E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5.95E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.951 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.3344 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.046E-011 VJ = 0.2615 M = 0.3137 
.MODEL DSUB D IS = 6.246E-010 N = 1.568 RS = 0.1544 BV = 75 CJO = 9.897E-012 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN67D8LW Spice Model v1.0 Last Revised 2015/7/14


*---------- DMN62D0U Spice Model ----------
.SUBCKT DMN62D0U 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 1.631 
RS 30 3 0.001 
RG 20 2 133 
CGS 2 3 2.79E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 3.4E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0  VTO = 1.596 
+ TOX = 6E-008  NSUB = 1.945E+017  KP = 1.196  KAPPA = 1E-015  U0 = 400  THETA = 5.648E-007 
.MODEL DCGD D  CJO = 1.283E-011  VJ = 0.6  M = 0.4065 
.MODEL DSUB D  IS = 2.05E-009  N = 1.698  RS = 0.1282  BV = 65  CJO = 8.365E-012  VJ = 0.7198  M = 0.6 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN62D0U Spice Model v1.0 Last Revised 2015/7/3


*---------- DMN62D0UW Spice Model ----------
.SUBCKT DMN62D0UW 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 1.631 
RS 30 3 0.001 
RG 20 2 133 
CGS 2 3 2.79E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 3.4E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0  VTO = 1.596 
+ TOX = 6E-008  NSUB = 1.945E+017  KP = 1.196  KAPPA = 1E-015  U0 = 400  THETA = 5.648E-007 
.MODEL DCGD D  CJO = 1.283E-011  VJ = 0.6  M = 0.4065 
.MODEL DSUB D  IS = 2.05E-009  N = 1.698  RS = 0.1282  BV = 65  CJO = 8.365E-012  VJ = 0.7198  M = 0.6 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN62D0UW Spice Model v1.0 Last Revised 2015/7/3


*---------- DMN62D0UDW Spice Model ----------
.SUBCKT DMN62D0UDW 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 1.631 
RS 30 3 0.001 
RG 20 2 133 
CGS 2 3 2.79E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 3.4E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0  VTO = 1.596 
+ TOX = 6E-008  NSUB = 1.945E+017  KP = 1.196  KAPPA = 1E-015  U0 = 400  THETA = 5.648E-007 
.MODEL DCGD D  CJO = 1.283E-011  VJ = 0.6  M = 0.4065 
.MODEL DSUB D  IS = 2.05E-009  N = 1.698  RS = 0.1282  BV = 65  CJO = 8.365E-012  VJ = 0.7198  M = 0.6 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN62D0UDW Spice Model v1.0 Last Revised 2015/7/3


*---------- 2N7002H Spice Model ----------
.SUBCKT 2N7002H 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.1977 
RS 30 3 0.001 
RG 20 2 134.6 
CGS 2 3 2.532E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.072 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.3271 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 1.33E-010 VJ = 0.1 M = 0.9638 
.MODEL DSUB D IS = 2.229E-010 N = 1.639 RS = 0.7641 BV = 86.7 CJO = 1.164E-012 VJ = 0.1038 M = 0.4732 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes 2N7002H  Spice Model v1.0 Last Revised 2015/6/29


*---------- DMTH6010LPSQ Spice Model ----------
.SUBCKT DMTH6010LPSQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.004229 
RS 30 3 0.001 
RG 20 2 0.59 
CGS 2 3 2.15E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.58E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.161 
+ TOX = 6E-008 NSUB = 1E+016 KP = 161.3 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 9.443E-010 VJ = 1 M = 0.9231 
.MODEL DSUB D IS = 3.582E-010 N = 1.161 RS = 0.004476 BV = 72.8 CJO = 1.69E-009 VJ = 1 M = 0.9352 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH6010LPSQ  Spice Model v1.0 Last Revised 2015/11/10


*---------- DMTH8012LK3Q Spice Model ----------
.SUBCKT DMTH8012LK3Q 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.01093 
RS 30 3 0.001 
RG 20 2 0.68 
CGS 2 3 2.125E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 1E-009 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8E+005  ETA = 0.001  VTO = 2.22 
+ TOX = 6E-008  NSUB = 1E+016  KP = 83.45  U0 = 400  KAPPA = 4.441E-010 
.MODEL DCGD D  CJO = 2.852E-010  VJ = 0.9  M = 0.5564 
.MODEL DSUB D  IS = 2.326E-010  N = 1.19  RS = 0.00327  BV = 90  CJO = 1.422E-009  VJ = 0.8  M = 0.3738 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMTH8012LK3Q  Spice Model v1.0 Last Revised 2015/11/13


*---------- DMTH4004SPS Spice Model ----------
.SUBCKT DMTH4004SPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001299 
RS 30 3 0.001 
RG 20 2 0.77 
CGS 2 3 4.614E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.5E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.189 
+ TOX = 6E-008 NSUB = 1E+016 KP = 66.04 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 5.071E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 9.177E-009 N = 1.352 RS = 9.544E-005 BV = 50 CJO = 6.893E-010 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH4004SPS Spice Model v1.0 Last Revised 2015/10/1


*---------- DMN61D9UW Spice Model ----------
.SUBCKT DMN61D9UW 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 1.449 
RS 30 3 0.001 
RG 20 2 127 
DESD1 2 5 DESD 
DESD2 3 5 DESD 
CGS 2 3 2.688E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.189 TOX = 6E-008 NSUB = 1E+016 KP = 1.163 U0 = 400 KAPPA = 14.08 
.MODEL DCGD D CJO = 1.808E-011 VJ = 0.134 M = 0.369 
.MODEL DSUB D IS = 247.6E-9 N = 1.566 RS = 0.358 EG = 0.06341 XTI = 8.194 
+ TNOM = 217.5 BV = 70 CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 
.MODEL DLIM D IS = 0.0001 
.MODEL DESD D IS = 2.728E-008 N = 66.22 BV = 5.068 
.ENDs
*Diodes DMN61D9UW Spice Model v1.0 Last Revised 2015/7/3


*---------- DMTH4004SCTB Spice Model ----------
.SUBCKT DMTH4004SCTB 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001299 
RS 30 3 0.001 
RG 20 2 0.77 
CGS 2 3 4.614E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.5E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.189 
+ TOX = 6E-008 NSUB = 1E+016 KP = 66.04 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 5.071E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 9.177E-009 N = 1.352 RS = 9.544E-005 BV = 50 CJO = 6.893E-010 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH4004SCTB Spice Model v1.0 Last Revised 2015/10/1


*---------- DMT6010LSS Spice Model ----------
.SUBCKT DMT6010LSS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.003535 
RS 30 3 0.001 
RG 20 2 0.6 
CGS 2 3 2.137E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.6E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.01616 VTO = 2.226 
+ TOX = 6E-008 NSUB = 1E+016 KP = 85.27 U0 = 400 KAPPA = 38.28 
.MODEL DCGD D CJO = 7.629E-010 VJ = 2.052 M = 1.442 
.MODEL DSUB D IS = 3.784E-010 N = 1.165 RS = 0.004441 
+ BV = 65 CJO = 1.489E-009 VJ = 2.873 M = 0.3016 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMNT6010LSS Spice Model v1.0 Last Revised 2013/9/9


*---------- DMTH4007LPSQ Spice Model ----------
.SUBCKT DMTH4007LPSQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.002855 
RS 30 3 0.001 
RG 20 2 0.62 
CGS 2 3 2.005E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 8E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.997 
+ TOX = 6E-008 NSUB = 1E+016 KP = 74.74 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.614E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 3.75E-010 N = 1.163 RS = 0.004456 BV = 40 CJO = 1.695E-009 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH4007LPSQ Spice Model v1.0 Last Revised 2015/8/19


*---------- DMT6007LFG Spice Model ----------
.SUBCKT DMT6007LFG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001863 
RS 30 3 0.001 
RG 20 2 0.59 
CGS 2 3 2.146E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.6E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.341 
+ TOX = 6E-008 NSUB = 1E+016 KP = 111 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 8.665E-010 VJ = 0.8 M = 0.7124 
.MODEL DSUB D IS = 2.3E-010 N = 1.161 RS = 0.002386 BV = 60 CJO = 3E-009 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT6007LFG Spice Model v1.0 Last Revised 2015/11/18


*---------- DMTH4004SCTBQ Spice Model ----------
.SUBCKT DMTH4004SCTBQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001299 
RS 30 3 0.001 
RG 20 2 0.77 
CGS 2 3 4.614E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.5E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.189 
+ TOX = 6E-008 NSUB = 1E+016 KP = 66.04 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 5.071E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 9.177E-009 N = 1.352 RS = 9.544E-005 BV = 50 CJO = 6.893E-010 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH4004SCTBQ Spice Model v1.0 Last Revised 2015/11/13


*---------- DMTH6010LK3Q Spice Model ----------
.SUBCKT DMTH6010LK3Q 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.004229 
RS 30 3 0.001 
RG 20 2 0.59 
CGS 2 3 2.15E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.58E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.161 
+ TOX = 6E-008 NSUB = 1E+016 KP = 161.3 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 9.443E-010 VJ = 1 M = 0.9231 
.MODEL DSUB D IS = 3.582E-010 N = 1.161 RS = 0.004476 BV = 72.8 CJO = 1.69E-009 VJ = 1 M = 0.9352 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH6010LK3Q  Spice Model v1.0 Last Revised 2015/11/10


*---------- DMTH4007SPDQ Spice Model ----------
.SUBCKT DMTH4007SPDQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.005581 
RS 30 3 1E-008 
RG 20 2 0.42 
CGS 2 3 2.083E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.45E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.54 
+ TOX = 6E-008 NSUB = 1E+016 KP = 75.2 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 9.398E-010 VJ = 1 M = 0.9082 
.MODEL DSUB D IS = 2.675E-010 N = 1.232 RS = 0.005279 BV = 66 CJO = 2.502E-009 VJ = 1 M = 0.9133 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH4007SPDQ  Spice Model v1.0 Last Revised 2015/11/13


*---------- DMNH4011SK3Q Spice Model ----------
.SUBCKT DMNH4011SK3Q 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.004592 
RS 30 3 0.001 
RG 20 2 2.19 
CGS 2 3 1.266E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 9E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.749 
+ TOX = 6E-008 NSUB = 1E+016 KP = 48.89 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 8.203E-010 VJ = 0.6 M = 0.6 
.MODEL DSUB D IS = 2.926E-010 N = 1.193 RS = 0.001056 BV = 55 CJO = 8.778E-010 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMNH4011SK3Q Spice Model v1.0 Last Revised 2015/11/13


*SRC=DMN5L06DMK;DI_DMN5L06DMK;MOSFETs N;Enh;50.0V 0.280A 2.00ohms  Diodes Inc. N Channel MOSFET
.MODEL DI_DMN5L06DMK  NMOS( LEVEL=1 VTO=1.20 KP=0.200  GAMMA=1.49
+ PHI=.75  LAMBDA=117u RD=0.280 RS=0.280
+ IS=140f  PB=0.800 MJ=0.460 CBD=98.8p 
+ CBS=119p  CGSO=60.0n CGDO=50.0n CGBO=390n  )
*   -- Assumes default L=100U W=100U --


*---------- DMTH6004SPSQ Spice Model ----------
.SUBCKT DMTH6004SPSQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001226 
RS 30 3 1E-008 
RG 20 2 0.66 
CGS 2 3 4.957E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 3.8E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.661 
+ TOX = 6E-008 NSUB = 1E+016 KP = 76.21 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 1.182E-009 VJ = 1 M = 0.6256 
.MODEL DSUB D IS = 5.527E-010 N = 1.203 RS = 0.002268 BV = 64 CJO = 2.894E-009 VJ = 1 M = 0.2266 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH6004SPSQ  Spice Model v1.0 Last Revised 2015/10/01


*---------- DMT69M8LSS Spice Model ----------
.SUBCKT DMT69M8LSS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.006099 
RS 30 3 1E-008 
RG 20 2 1.71 
CGS 2 3 2.016E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.086 
+ TOX = 6E-008 NSUB = 1E+016 KP = 136.4 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 4.367E-010 VJ = 1 M = 0.5797 
.MODEL DSUB D IS = 2.239E-010 N = 1.183 RS = 0.005972 BV = 67 CJO = 8.953E-010 VJ = 1 M = 0.201 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT69M8LSS  Spice Model v1.0 Last Revised 2015/10/22


*---------- DMT5015LFDF Spice Model ----------
.SUBCKT DMT5015LFDF 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.008659 
RS 30 3 0.001 
RG 20 2 1.9 
CGS 2 3 9.188E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 4E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.916 
+ TOX = 6E-008 NSUB = 1E+016 KP = 47.24 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.116E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 4.682E-010 N = 1.238 RS = 0.007384 BV = 50 CJO = 7.542E-010 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT5015LFDF Spice Model v1.0 Last Revised 2015/12/15


*---------- DMTH4004LK3 Spice Model ----------
.SUBCKT DMTH4004LK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.0006761 
RS 30 3 0.001 
RG 20 2 0.66 
CGS 2 3 4.581E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.5E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.369 
+ TOX = 6E-008 NSUB = 1E+016 KP = 208.7 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 5.071E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 1.691E-008 N = 1.354 RS = 0.0001471 BV = 40 CJO = 6.893E-010 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH4004LK3 Spice Model v1.0 Last Revised 2015/12/15


*---------- DMN4026SK3 Spice Model ----------
.SUBCKT DMN4026SK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.007676 
RS 30 3 0.001 
RG 20 2 1.5 
CGS 2 3 1.176E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 8E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.129 
+ TOX = 6E-008 NSUB = 1E+016 KP = 40 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 2.925E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.232E-010 N = 1.234 RS = 0.004374 BV = 48 CJO = 2.224E-010 VJ = 0.7963 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN4026SK3 Spice Model v1.0 Last Revised 2015/6/17


*---------- DMN6040SVTQ Spice Model ----------
.SUBCKT DMN6040SVTQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.02611 
RS 30 3 0.001 
RG 20 2 1.18 
CGS 2 3 1.277E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 7.5E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8E+005  ETA = 0.01616  VTO = 2.642 
+ TOX = 6E-008  NSUB = 1E+016  KP = 47.18  U0 = 400  KAPPA = 1 
.MODEL DCGD D  CJO = 3.638E-010  VJ = 0.3003  M = 0.4785 
.MODEL DSUB D  IS = 1.146E-011  N = 1.109  RS = 0.008602  BV = 65  CJO = 1.445E-010  VJ = 0.3616  M = 0.5674 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN6040SVTQ Spice Model v1.0 Last Revised 2015/12/23


*---------- DMN6040SSDQ Spice Model ----------
.SUBCKT DMN6040SSDQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.02611 
RS 30 3 0.001 
RG 20 2 1.18 
CGS 2 3 1.277E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 7.5E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8E+005  ETA = 0.01616  VTO = 2.642 
+ TOX = 6E-008  NSUB = 1E+016  KP = 47.18  U0 = 400  KAPPA = 1 
.MODEL DCGD D  CJO = 3.638E-010  VJ = 0.3003  M = 0.4785 
.MODEL DSUB D  IS = 1.146E-011  N = 1.109  RS = 0.008602  BV = 65  CJO = 1.445E-010  VJ = 0.3616  M = 0.5674 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN6040SSDQ Spice Model v1.0 Last Revised 2015/12/23


*---------- DMN53D0LQ Spice Model ----------
.SUBCKT DMN53D0LQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.6021 
RS 30 3 0.001 
RG 20 2 29.9 
CGS 2 3 5E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5.8E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.411 
+ TOX = 6E-008 NSUB = 1E+016 KP = 1.08 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 3.516E-011 VJ = 0.6 M = 0.6 
.MODEL DSUB D IS = 4.736E-009 N = 1.687 RS = 0.2132 BV = 50 CJO = 2.22E-010 VJ = 0.1 M = 0.7932 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN53D0LQ Spice Model v1.0 Last Revised 2015/01/05


*---------- DMTH6004LPS Spice Model ----------
.SUBCKT DMTH6004LPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.0001798 
RS 30 3 0.001659 
RG 20 2 0.64 
CGS 2 3 4.923E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 3.7E-009 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8E+005  ETA = 0.001  VTO = 2.095 
+ TOX = 6E-008  NSUB = 1E+016  KP = 287.2  U0 = 400  KAPPA = 4.441E-010 
.MODEL DCGD D  CJO = 1.864E-009  VJ = 1  M = 0.7538 
.MODEL DSUB D  IS = 1.026E-008  N = 1.357  RS = 4.441E-010  BV = 65  CJO = 3E-009  VJ = 0.8  M = 0.3 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMTH6004LPS Spice Model v1.0 Last Revised 2015/6/5


*---------- DMN601VKQ Spice Model ----------
.SUBCKT DMN601VKQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 1.631 
RS 30 3 0.001 
RG 20 2 133 
CGS 2 3 2.711E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 2.628E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0  VTO = 1.596 
+ TOX = 6E-008  NSUB = 1.945E+017  KP = 1.196  KAPPA = 1E-015  U0 = 400  THETA = 5.648E-007 
.MODEL DCGD D  CJO = 2.628E-011  VJ = 0.6  M = 0.2561 
.MODEL DSUB D  IS = 2.05E-009  N = 1.698  RS = 0.1282  BV = 65  CJO = 6.226E-012  VJ = 1  M = 0.6474 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN601VKQ Spice Model v1.0 Last Revised 2016/1/13


*---------- DMN601WKQ Spice Model ----------
.SUBCKT DMN601WKQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 1 
RS 30 3 0.001 
RG 20 2 1.48 
CGS 2 3 2.8E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 6E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.027 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.6294 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.368E-011 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.273E-010 N = 1.499 RS = 0.1514 BV = 60 CJO = 2E-011 VJ = 0.6 M = 0.7751 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN601WKQ Spice Model v1.0 Last Revised 2016/01/07


*---------- 2N7002 Spice Model ----------
.SUBCKT N7002 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.976 
RS 30 3 0.001 
RG 20 2 160.6 
CGS 2 3 2E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5.9E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 2.154 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.4654 KAPPA = 1E-015 U0 = 400 
.MODEL DCGD D CJO = 1.2E-011 VJ = 0.6 M = 0.6 
.MODEL DSUB D IS = 6.808E-010 N = 1.576 RS = 0.1408 BV = 72 CJO = 8E-012 VJ = 0.8 M = 0.6474 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes N7002 Spice Model v0 Last Revised 2017/2/9


*---------- DMTH4004SK3 Spice Model ----------
.SUBCKT DMTH4004SK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001299 
RS 30 3 0.001 
RG 20 2 0.77 
CGS 2 3 4.614E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.5E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.189 
+ TOX = 6E-008 NSUB = 1E+016 KP = 66.04 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 5.071E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 9.177E-009 N = 1.352 RS = 9.544E-005 BV = 50 CJO = 6.893E-010 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH4004SK3 Spice Model v1.0 Last Revised 2015/11/20


*---------- DMTH6004SCT Spice Model ----------
.SUBCKT DMTH6004SCT 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001226 
RS 30 3 1E-008 
RG 20 2 0.66 
CGS 2 3 4.957E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 3.8E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.661 
+ TOX = 6E-008 NSUB = 1E+016 KP = 76.21 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 1.182E-009 VJ = 1 M = 0.6256 
.MODEL DSUB D IS = 5.527E-010 N = 1.203 RS = 0.002268 BV = 64 CJO = 2.894E-009 VJ = 1 M = 0.2266 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH6004SCT  Spice Model v1.0M Last Revised 2016/2/18


*---------- DMTH6005LK3 Spice Model ----------
.SUBCKT DMTH6005LK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.003586 
RS 30 3 1E-008 
RG 20 2 0.66 
CGS 2 3 3.195E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.3E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.272 
+ TOX = 6E-008 NSUB = 1E+016 KP = 222.2 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 5.577E-010 VJ = 1 M = 0.9082 
.MODEL DSUB D IS = 4.976E-010 N = 1.224 RS = 0.001644 BV = 70 CJO = 2.885E-009 VJ = 1 M = 0.9133 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH6005LK3  Spice Model v1.0M Last Revised 2016/2/22


*---------- 2N7002VAC Spice Model ----------
.SUBCKT 2N7002VAC 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.764 
RS 30 3 0.001 
RG 20 2 120 
CGS 2 3 1.982E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5.95E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.951 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.3344 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.046E-011 VJ = 0.2615 M = 0.3137 
.MODEL DSUB D IS = 6.246E-010 N = 1.568 RS = 0.1544 BV = 75 CJO = 9.897E-012 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes 2N7002VAC Spice Model v1.0M Last Revised 2016/2/23


*---------- 2N7002VC Spice Model ----------
.SUBCKT 2N7002VC 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.764 
RS 30 3 0.001 
RG 20 2 120 
CGS 2 3 1.982E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5.95E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.951 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.3344 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.046E-011 VJ = 0.2615 M = 0.3137 
.MODEL DSUB D IS = 6.246E-010 N = 1.568 RS = 0.1544 BV = 75 CJO = 9.897E-012 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes 2N7002VC Spice Model v1.0M Last Revised 2016/2/23


*---------- MMBF170Q Spice Model ----------
.SUBCKT MMBF170Q 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.764 
RS 30 3 0.001 
RG 20 2 120 
CGS 2 3 1.982E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5.95E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.951 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.3344 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.046E-011 VJ = 0.2615 M = 0.3137 
.MODEL DSUB D IS = 6.246E-010 N = 1.568 RS = 0.1544 BV = 75 CJO = 9.897E-012 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes MMBF170Q Spice Model v1.0M Last Revised 2016/3/7


*---------- DMTH4005SK3 Spice Model ----------
.SUBCKT DMTH4005SK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 9.814E-005 
RS 30 3 0.001 
RG 20 2 0.67 
CGS 2 3 2.961E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.3E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.117 
+ TOX = 6E-008 NSUB = 1E+016 KP = 46.39 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.053E-009 VJ = 0.8 M = 0.6001 
.MODEL DSUB D IS = 1.159E-009 N = 1.284 RS = 0.0003205 BV = 40 CJO = 1.784E-009 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH4005SK3 Spice Model v1.0M Last Revised 2016/3/8


*---------- DMTH4004LK3Q Spice Model ----------
.SUBCKT DMTH4004LK3Q 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.0006761 
RS 30 3 0.001 
RG 20 2 0.66 
CGS 2 3 4.581E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.5E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.369 
+ TOX = 6E-008 NSUB = 1E+016 KP = 208.7 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 5.071E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 1.691E-008 N = 1.354 RS = 0.0001471 BV = 40 CJO = 6.893E-010 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH4004LK3Q Spice Model v1.0M Last Revised 2016/2/18


*---------- DMTH6004SK3 Spice Model ----------
.SUBCKT DMTH6004SK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001226 
RS 30 3 1E-008 
RG 20 2 0.66 
CGS 2 3 4.957E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 3.8E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.661 
+ TOX = 6E-008 NSUB = 1E+016 KP = 76.21 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 1.182E-009 VJ = 1 M = 0.6256 
.MODEL DSUB D IS = 5.527E-010 N = 1.203 RS = 0.002268 BV = 64 CJO = 2.894E-009 VJ = 1 M = 0.2266 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH6004SK3  Spice Model v1.0M Last Revised 2016/2/18


*---------- DMTH6005LK3Q Spice Model ----------
.SUBCKT DMTH6005LK3Q 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.003586 
RS 30 3 1E-008 
RG 20 2 0.66 
CGS 2 3 3.195E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.3E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.272 
+ TOX = 6E-008 NSUB = 1E+016 KP = 222.2 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 5.577E-010 VJ = 1 M = 0.9082 
.MODEL DSUB D IS = 4.976E-010 N = 1.224 RS = 0.001644 BV = 70 CJO = 2.885E-009 VJ = 1 M = 0.9133 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH6005LK3Q  Spice Model v1.0M Last Revised 2016/2/22


*---------- DMTH8012LPSQ Spice Model ----------
.SUBCKT DMT8012LPSQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.008517 
RS 30 3 0.001 
RG 20 2 0.44 
CGS 2 3 2.128E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.2E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.597 
+ TOX = 6E-008 NSUB = 1E+016 KP = 56.79 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 8.921E-010 VJ = 0.7739 M = 0.8 
.MODEL DSUB D IS = 2.461E-010 N = 1.229 RS = 0.001885 BV = 89 CJO = 1.11E-009 VJ = 0.8 M = 0.6392 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT8012LPSQ Spice Model v1.0M Last Revised 2016/3/21


*---------- DMTH6004SK3Q Spice Model ----------
.SUBCKT DMTH6004SK3Q 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001226 
RS 30 3 1E-008 
RG 20 2 0.66 
CGS 2 3 4.957E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 3.8E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.661 
+ TOX = 6E-008 NSUB = 1E+016 KP = 76.21 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 1.182E-009 VJ = 1 M = 0.6256 
.MODEL DSUB D IS = 5.527E-010 N = 1.203 RS = 0.002268 BV = 64 CJO = 2.894E-009 VJ = 1 M = 0.2266 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH6004SK3Q  Spice Model v1.0M Last Revised 2016/2/18


*---------- DMTH6009LK3 Spice Model ----------
.SUBCKT DMTH6009LK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.006099 
RS 30 3 1E-008 
RG 20 2 1.71 
CGS 2 3 2.016E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.086 
+ TOX = 6E-008 NSUB = 1E+016 KP = 136.4 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 4.367E-010 VJ = 1 M = 0.5797 
.MODEL DSUB D IS = 2.239E-010 N = 1.183 RS = 0.005972 BV = 67 CJO = 8.953E-010 VJ = 1 M = 0.201 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH6009LK3 Spice Model v1.0 Last Revised 2015/7/27


*---------- DMT6004SCT Spice Model ----------
.SUBCKT DMT6004SCT 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001226 
RS 30 3 1E-008 
RG 20 2 0.66 
CGS 2 3 4.957E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 3.8E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.661 
+ TOX = 6E-008 NSUB = 1E+016 KP = 76.21 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 1.182E-009 VJ = 1 M = 0.6256 
.MODEL DSUB D IS = 5.527E-010 N = 1.203 RS = 0.002268 BV = 64 CJO = 2.894E-009 VJ = 1 M = 0.2266 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT6004SCT  Spice Model v1.0M Last Revised 2016/4/6


*---------- DMNH6012SPS Spice Model ----------
.SUBCKT DMNH6012SPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.004237 
RS 30 3 0.001 
RG 20 2 2 
CGS 2 3 1.998E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.301E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.907 
+ TOX = 6E-008 NSUB = 1E+016 KP = 68.11 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 6.216E-010 VJ = 1 M = 0.9231 
.MODEL DSUB D IS = 2.336E-010 N = 1.151 RS = 0.0009964 BV = 71 CJO = 1.485E-009 VJ = 0.7681 M = 0.4279 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMNH6012SPS  Spice Model v1.0 Last Revised 2015/04/12


*---------- DMTH4005SK3Q Spice Model ----------
.SUBCKT DMTH4005SK3Q 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 9.814E-005 
RS 30 3 0.001 
RG 20 2 0.67 
CGS 2 3 2.961E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.3E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.117 
+ TOX = 6E-008 NSUB = 1E+016 KP = 46.39 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.053E-009 VJ = 0.8 M = 0.6001 
.MODEL DSUB D IS = 1.159E-009 N = 1.284 RS = 0.0003205 BV = 40 CJO = 1.784E-009 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH4005SK3Q Spice Model v1.0M Last Revised 2016/3/8


*---------- DMNH6008SPSQ Spice Model ----------
.SUBCKT DMNH6008SPSQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001343 
RS 30 3 0.001 
RG 20 2 1.35 
CGS 2 3 2.757E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.209 
+ TOX = 6E-008 NSUB = 1E+016 KP = 43.04 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 4.614E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.22E-010 N = 1.156 RS = 4.441E-010 BV = 68 CJO = 2E-009 VJ = 0.8 M = 0.6 TT=1.6E-08
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMNH6008SPSQ Spice Model v1.0M Last Revised 2016/3/31


*---------- DMNH6012SPSQ Spice Model ----------
.SUBCKT DMNH6012SPSQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.004237 
RS 30 3 0.001 
RG 20 2 2 
CGS 2 3 1.998E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.301E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.907 
+ TOX = 6E-008 NSUB = 1E+016 KP = 68.11 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 6.216E-010 VJ = 1 M = 0.9231 
.MODEL DSUB D IS = 2.336E-010 N = 1.151 RS = 0.0009964 BV = 71 CJO = 1.485E-009 VJ = 0.7681 M = 0.4279 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMNH6012SPSQ  Spice Model v1.0 Last Revised 2015/04/12


*---------- DMNH6008SCTQ Spice Model ----------
.SUBCKT DMNH6008SCTQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001343 
RS 30 3 0.001 
RG 20 2 1.35 
CGS 2 3 2.757E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.209 
+ TOX = 6E-008 NSUB = 1E+016 KP = 43.04 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 4.614E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.22E-010 N = 1.156 RS = 4.441E-010 BV = 68 CJO = 2E-009 VJ = 0.8 M = 0.6 TT=1.6E-08
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMNH6008SCTQ Spice Model v1.0M Last Revised 2016/3/31


*---------- BSS138DWQ Spice Model ----------
.SUBCKT BSS138DWQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.9338 
RS 30 3 0.001 
RG 20 2 47 
CGS 2 3 1.906E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 4.9E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 1E-012 VTO = 1.422 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.5025 U0 = 400 KAPPA = 7.117 
.MODEL DCGD D CJO = 9.463E-012 VJ = 6.446 M = 0.9816 
.MODEL DSUB D IS = 7.582E-010 N = 1.586 RS = 0.1976 
+ BV = 65 CJO = 1.173E-011 VJ = 0.03727 M = 0.2868 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes BSS138DWQ Spice Model v1.0M Last Revised 2016/4/19


*---------- DMT6010SCT Spice Model ----------
.SUBCKT DMT6010SCT 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.004229 
RS 30 3 0.001 
RG 20 2 0.59 
CGS 2 3 2.15E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.58E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.161 
+ TOX = 6E-008 NSUB = 1E+016 KP = 161.3 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 9.443E-010 VJ = 1 M = 0.9231 
.MODEL DSUB D IS = 3.582E-010 N = 1.161 RS = 0.004476 BV = 72.8 CJO = 1.69E-009 VJ = 1 M = 0.9352 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT6010SCT  Spice Model v1.0M Last Revised 2016/4/7


*---------- DMT6005LPS Spice Model ----------
.SUBCKT DMT6005LPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.003586 
RS 30 3 1E-008 
RG 20 2 0.66 
CGS 2 3 3.195E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.3E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.272 
+ TOX = 6E-008 NSUB = 1E+016 KP = 222.2 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 5.577E-010 VJ = 1 M = 0.9082 
.MODEL DSUB D IS = 4.976E-010 N = 1.224 RS = 0.001644 BV = 70 CJO = 2.885E-009 VJ = 1 M = 0.9133 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT6005LPS  Spice Model v1.0M Last Revised 2016/4/20


*---------- DMTH6010SCT Spice Model ----------
.SUBCKT DMTH6010SCT 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.004229 
RS 30 3 0.001 
RG 20 2 0.59 
CGS 2 3 2.15E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.58E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.161 
+ TOX = 6E-008 NSUB = 1E+016 KP = 161.3 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 9.443E-010 VJ = 1 M = 0.9231 
.MODEL DSUB D IS = 3.582E-010 N = 1.161 RS = 0.004476 BV = 72.8 CJO = 1.69E-009 VJ = 1 M = 0.9352 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH6010SCT  Spice Model v1.0M Last Revised 2016/4/7


---------- DMTH4007SK3 Spice Model ----------
.SUBCKT DMTH4007SK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.002288 
RS 30 3 0.001 
RG 20 2 0.46 
CGS 2 3 2.042E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.7E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.513 
+ TOX = 6E-008 NSUB = 1E+016 KP = 100 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 1.098E-009 VJ = 1 M = 0.9231 
.MODEL DSUB D IS = 2.333E-010 N = 1.213 RS = 0.0009699 BV = 72.8 CJO = 1.33E-009 VJ = 1 M = 0.1934 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH4007SK3  Spice Model v1.0M Last Revised 2016/4/25


*---------- DMT6009LCT Spice Model ----------
.SUBCKT DMT6009LCT 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.006099 
RS 30 3 1E-008 
RG 20 2 1.71 
CGS 2 3 2.016E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.086 
+ TOX = 6E-008 NSUB = 1E+016 KP = 136.4 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 4.367E-010 VJ = 1 M = 0.5797 
.MODEL DSUB D IS = 2.239E-010 N = 1.183 RS = 0.005972 BV = 67 CJO = 8.953E-010 VJ = 1 M = 0.201 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT6009LCT  Spice Model v1.0M Last Revised 2016/5/4


*---------- DMNH6021SK3Q Spice Model ----------
.SUBCKT DMNH6021SK3Q 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.00808 
RS 30 3 0.001 
RG 20 2 2.18 
CGS 2 3 9.932E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 7E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.343 
+ TOX = 6E-008 NSUB = 1E+016 KP = 37.38 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 4.614E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 1.001E-009 N = 1.251 RS = 0.0008424 BV = 73 CJO = 8.135E-010 VJ = 0.6295 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMNH6021SK3Q Spice Model v1.0M Last Revised 2016/5/10


*---------- DMT6009LPS Spice Model ----------
.SUBCKT DMT6009LPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.006099 
RS 30 3 1E-008 
RG 20 2 1.71 
CGS 2 3 2.016E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.086 
+ TOX = 6E-008 NSUB = 1E+016 KP = 136.4 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 4.367E-010 VJ = 1 M = 0.5797 
.MODEL DSUB D IS = 2.239E-010 N = 1.183 RS = 0.005972 BV = 67 CJO = 8.953E-010 VJ = 1 M = 0.201 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT6009LPS  Spice Model v1.0M Last Revised 2016/5/4


*---------- DMT6015LSS Spice Model ----------
.SUBCKT DMT6015LSS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.008244 
RS 30 3 0.001 
RG 20 2 1.48 
CGS 2 3 1.107E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 6E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.997 
+ TOX = 6E-008 NSUB = 1E+016 KP = 40.42 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 3.204E-010 VJ = 0.8 M = 0.6777 
.MODEL DSUB D IS = 1.257E-009 N = 1.322 RS = 0.005675 BV = 60 CJO = 5.719E-010 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT6015LSS Spice Model v1.0M Last Revised 2016/5/4


*---------- DMTH6010LPD Spice Model ----------
.SUBCKT DMTH6010LPD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.004229 
RS 30 3 0.001 
RG 20 2 0.59 
CGS 2 3 2.15E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.58E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.161 
+ TOX = 6E-008 NSUB = 1E+016 KP = 161.3 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 9.443E-010 VJ = 1 M = 0.9231 
.MODEL DSUB D IS = 3.582E-010 N = 1.161 RS = 0.004476 BV = 72.8 CJO = 1.69E-009 VJ = 1 M = 0.9352 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH6010LPD  Spice Model v1.0M Last Revised 2016/5/4


*---------- DMT6005LSS Spice Model ----------
.SUBCKT DMT6005LSS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001828 
RS 30 3 0.001 
RG 20 2 0.66 
CGS 2 3 3.208E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.2E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.908 
+ TOX = 6E-008 NSUB = 1E+016 KP = 92.19 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 4.295E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 7.508E-009 N = 1.396 RS = 0.0001377 BV = 60 CJO = 2E-009 VJ = 0.8 M = 0.6 TT = 2E-008 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT6005LSS Spice Model v1.0M Last Revised 2016/3/30


*---------- DMTH6010LPDQ Spice Model ----------
.SUBCKT DMTH6010LPDQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.005507 
RS 30 3 0.001 
RG 20 2 0.67 
CGS 2 3 2.569E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.2E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.411 
+ TOX = 6E-008 NSUB = 1E+016 KP = 66.76 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 8.846E-010 VJ = 0.8 M = 0.7836 
.MODEL DSUB D IS = 2.263E-010 N = 1.18 RS = 0.007091 BV = 68 CJO = 3E-009 VJ = 0.8 M = 0.6 TT = 1.7E-008 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH6010LPDQ Spice Model v1.0M Last Revised 2016/5/20


*---------- DMT4004LPS Spice Model ----------
.SUBCKT DMT4004LPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.0006761 
RS 30 3 0.001 
RG 20 2 0.66 
CGS 2 3 4.581E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.5E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.369 
+ TOX = 6E-008 NSUB = 1E+016 KP = 208.7 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 5.071E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 1.691E-008 N = 1.354 RS = 0.0001471 BV = 40 CJO = 6.893E-010 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT4004LPS Spice Model v1.0M Last Revised 2016/5/4


*---------- DMT8012LSS Spice Model ----------
.SUBCKT DMT8012LSS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.008517 
RS 30 3 0.001 
RG 20 2 0.44 
CGS 2 3 2.128E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.2E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.597 
+ TOX = 6E-008 NSUB = 1E+016 KP = 56.79 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 8.921E-010 VJ = 0.7739 M = 0.8 
.MODEL DSUB D IS = 2.461E-010 N = 1.229 RS = 0.001885 BV = 89 CJO = 1.11E-009 VJ = 0.8 M = 0.6392 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT8012LSS Spice Model v1.0M Last Revised 2016/5/4


*---------- DMT6017LSS Spice Model ----------
.SUBCKT DMT6017LSS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.008248 
RS 30 3 0.001 
RG 20 2 1.35 
CGS 2 3 8.551E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 6E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8E+005  ETA = 0.001  VTO = 2.685 
+ TOX = 6E-008  NSUB = 1E+016  KP = 44  U0 = 400  KAPPA = 1 
.MODEL DCGD D  CJO = 3.956E-010  VJ = 0.8  M = 0.6557 
.MODEL DSUB D  IS = 3.752E-008  N = 1.624  RS = 0.005938  BV = 65  CJO = 5.236E-010  VJ = 1  M = 0.2051 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMT6017LSS Spice Model v1.0M Last Revised 2016/5/4


*---------- DMT69M8LPS Spice Model ----------
.SUBCKT DMT69M8LPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.006099 
RS 30 3 1E-008 
RG 20 2 1.71 
CGS 2 3 2.016E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.086 
+ TOX = 6E-008 NSUB = 1E+016 KP = 136.4 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 4.367E-010 VJ = 1 M = 0.5797 
.MODEL DSUB D IS = 2.239E-010 N = 1.183 RS = 0.005972 BV = 67 CJO = 8.953E-010 VJ = 1 M = 0.201 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT69M8LPS  Spice Model v1.0M Last Revised 2016/5/4


*---------- DMNH4006SPSQ Spice Model ----------
.SUBCKT DMNH4006SPSQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001 
RS 30 3 0.001 
RG 20 2 1.7 
CGS 2 3 2.157E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.1E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.15 
+ TOX = 6E-008 NSUB = 1E+016 KP = 47.64 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.275E-009 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.252E-010 N = 1.153 RS = 0.001541 BV = 40 CJO = 1.897E-009 VJ = 0.7999 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMNH4006SPSQ Spice Model v1.0M Last Revised 2016/3/31


*---------- DMT6015LFV Spice Model ----------
.SUBCKT DMT6015LFV 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.008244 
RS 30 3 0.001 
RG 20 2 1.48 
CGS 2 3 1.107E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 6E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.997 
+ TOX = 6E-008 NSUB = 1E+016 KP = 40.42 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 3.204E-010 VJ = 0.8 M = 0.6777 
.MODEL DSUB D IS = 1.257E-009 N = 1.322 RS = 0.005675 BV = 60 CJO = 5.719E-010 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT6015LFV Spice Model v1.0M Last Revised 2016/5/26


*---------- DMNH4006SK3Q Spice Model ----------
.SUBCKT DMNH4006SK3Q 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001 
RS 30 3 0.001 
RG 20 2 1.7 
CGS 2 3 2.157E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.1E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.15 
+ TOX = 6E-008 NSUB = 1E+016 KP = 47.64 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.275E-009 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.252E-010 N = 1.153 RS = 0.001541 BV = 40 CJO = 1.897E-009 VJ = 0.7999 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMNH4006SK3Q Spice Model v1.0 Last Revised 2015/9/10


*---------- DMNH4011SPSQ Spice Model ----------
.SUBCKT DMNH4011SPSQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.004592 
RS 30 3 0.001 
RG 20 2 2.19 
CGS 2 3 1.266E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 9E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.749 
+ TOX = 6E-008 NSUB = 1E+016 KP = 48.89 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 8.203E-010 VJ = 0.6 M = 0.6 
.MODEL DSUB D IS = 2.926E-010 N = 1.193 RS = 0.001056 BV = 55 CJO = 8.778E-010 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMNH4011SPSQ Spice Model v1.0M Last Revised 2016/04/28


*---------- DMTH4004LPS Spice Model ----------
.SUBCKT DMTH4004LPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.0006761 
RS 30 3 0.001 
RG 20 2 0.66 
CGS 2 3 4.581E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.5E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.369 
+ TOX = 6E-008 NSUB = 1E+016 KP = 208.7 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 5.071E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 1.691E-008 N = 1.354 RS = 0.0001471 BV = 40 CJO = 6.893E-010 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH4004LPS Spice Model v1.0M Last Revised 2016/4/18


*---------- DMTH6016LPS Spice Model ----------
.SUBCKT DMTH6016LPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.006728 
RS 30 3 0.001 
RG 20 2 1.35 
CGS 2 3 8.475E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 6E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.61 
+ TOX = 6E-008 NSUB = 1E+016 KP = 37.72 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 3.945E-010 VJ = 0.8 M = 0.6507 
.MODEL DSUB D IS = 2.448E-010 N = 1.248 RS = 0.006471 BV = 60 CJO = 5.274E-010 VJ = 0.8 M = 0.6 TT=2.2E-010
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH6016LPS Spice Model v1.0M Last Revised 2016/4/19


*---------- DMTH6010SK3Q Spice Model ----------
.SUBCKT DMTH6010SK3Q 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001 
RS 30 3 0.001 
RG 20 2 0.39 
CGS 2 3 2.821E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 7E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.126 
+ TOX = 6E-008 NSUB = 1E+016 KP = 42.75 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 5.661E-010 VJ = 0.8 M = 0.7959 
.MODEL DSUB D IS = 2.263E-010 N = 1.18 RS = 0.007091 BV = 67 CJO = 2E-009 VJ = 0.8 M = 0.6 TT = 1.7E-008 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH6010SK3Q Spice Model v1.0M Last Revised 2016/5/30



*---------- DMP4025LSSQ Spice Model ----------
.SUBCKT DMP4025LSSQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.006043 
RS 30 3 0.001 
RG 20 2 6.43 
CGS 2 3 1.554E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1.4E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 
+ TOX = 6E-008 NSUB = 1E+016 KP = 11.66 KAPPA = 9.057 VTO = -1.385 
.MODEL DCGD D CJO = 5.62E-010 VJ = 0.6 M = 0.4221 
.MODEL DSUB D IS = 4.586E-010 N = 1.275 RS = 0.01773 
+ BV = 50 CJO = 2.892E-010 VJ = 0.0947 M = 0.3174 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP4025LSSQ Spice Model v1.0 Last Revised 2016/5/3


*---------- DMTH4005SCT Spice Model ----------
.SUBCKT DMTH4005SCT 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 9.814E-005 
RS 30 3 0.001 
RG 20 2 0.67 
CGS 2 3 2.961E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.3E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.117 
+ TOX = 6E-008 NSUB = 1E+016 KP = 46.39 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.053E-009 VJ = 0.8 M = 0.6001 
.MODEL DSUB D IS = 1.159E-009 N = 1.284 RS = 0.0003205 BV = 40 CJO = 1.784E-009 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH4005SCT Spice Model v1.0M Last Revised 2016/6/1


*---------- DMNH6021SK3 Spice Model ----------
.SUBCKT DMNH6021SK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.00808 
RS 30 3 0.001 
RG 20 2 2.18 
CGS 2 3 9.932E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 7E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.343 
+ TOX = 6E-008 NSUB = 1E+016 KP = 37.38 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 4.614E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 1.001E-009 N = 1.251 RS = 0.0008424 BV = 73 CJO = 8.135E-010 VJ = 0.6295 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMNH6021SK3 Spice Model v1.0M Last Revised 2016/5/10



*---------- DMT4005SCT Spice Model ----------
.SUBCKT DMT4005SCT 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 9.814E-005 
RS 30 3 0.001 
RG 20 2 0.67 
CGS 2 3 2.961E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.3E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.117 
+ TOX = 6E-008 NSUB = 1E+016 KP = 46.39 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.053E-009 VJ = 0.8 M = 0.6001 
.MODEL DSUB D IS = 1.159E-009 N = 1.284 RS = 0.0003205 BV = 40 CJO = 1.784E-009 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT4005SCT Spice Model v1.0M Last Revised 2016/6/1



*---------- DMTH6005LCT Spice Model ----------
.SUBCKT DMTH6005LCT 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.003586 
RS 30 3 1E-008 
RG 20 2 0.66 
CGS 2 3 3.195E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.3E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.272 
+ TOX = 6E-008 NSUB = 1E+016 KP = 222.2 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 5.577E-010 VJ = 1 M = 0.9082 
.MODEL DSUB D IS = 4.976E-010 N = 1.224 RS = 0.001644 BV = 70 CJO = 2.885E-009 VJ = 1 M = 0.9133 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH6005LCT  Spice Model v1.0M Last Revised 2016/6/1



*---------- DMNH6021SPS Spice Model ----------
.SUBCKT DMNH6021SPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.00808 
RS 30 3 0.001 
RG 20 2 2.18 
CGS 2 3 9.932E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 7E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.343 
+ TOX = 6E-008 NSUB = 1E+016 KP = 37.38 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 4.614E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 1.001E-009 N = 1.251 RS = 0.0008424 BV = 73 CJO = 8.135E-010 VJ = 0.6295 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMNH6021SPS Spice Model v1.0M Last Revised 2016/4/28


*---------- DMNH6021SPSQ Spice Model ----------
.SUBCKT DMNH6021SPSQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.00808 
RS 30 3 0.001 
RG 20 2 2.18 
CGS 2 3 9.932E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 7E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.343 
+ TOX = 6E-008 NSUB = 1E+016 KP = 37.38 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 4.614E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 1.001E-009 N = 1.251 RS = 0.0008424 BV = 73 CJO = 8.135E-010 VJ = 0.6295 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMNH6021SPSQ Spice Model v1.0M Last Revised 2016/4/28


*---------- DMNH6021SPD Spice Model ----------
.SUBCKT DMNH6021SPD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.00808 
RS 30 3 0.001 
RG 20 2 2.18 
CGS 2 3 9.932E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 7E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.343 
+ TOX = 6E-008 NSUB = 1E+016 KP = 37.38 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 4.614E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 1.001E-009 N = 1.251 RS = 0.0008424 BV = 73 CJO = 8.135E-010 VJ = 0.6295 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMNH6021SPD Spice Model v1.0M Last Revised 2016/4/28



*---------- DMNH6021SPDQ Spice Model ----------
.SUBCKT DMNH6021SPDQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.00808 
RS 30 3 0.001 
RG 20 2 2.18 
CGS 2 3 9.932E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 7E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.343 
+ TOX = 6E-008 NSUB = 1E+016 KP = 37.38 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 4.614E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 1.001E-009 N = 1.251 RS = 0.0008424 BV = 73 CJO = 8.135E-010 VJ = 0.6295 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMNH6021SPDQ Spice Model v1.0M Last Revised 2016/4/28



*---------- 2N7002AQ Spice Model ----------
.SUBCKT 2N7002AQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 2.175 
RS 30 3 0.001 
RG 20 2 79.9 
DESD1 2 5 DESD 
DESD2 3 5 DESD 
CGS 2 3 2.011E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5.9E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.595 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.58 U0 = 400 KAPPA = 4.069 
.MODEL DCGD D CJO = 1.646E-011 VJ = 0.1277 M = 0.4 
.MODEL DSUB D IS = 4.551E-009 N = 1.836 RS = 0.1357 
+ CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 
.MODEL DLIM D IS = 0.0001 
.MODEL DESD D IS = 1.223E-008 N = 54.79 BV = 5.385 
.ENDS
*Diodes 2N7002AQ Spice Model v1.0 Last Revised 2016/6/15


*---------- DMNH6022SSD Spice Model ----------
.SUBCKT DMNH6022SSD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01507 
RS 30 3 0.001 
RG 20 2 1.95 
CGS 2 3 1.906E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.91 
+ TOX = 6E-008 NSUB = 1E+016 KP = 27.65 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 4.087E-010 VJ = 0.6996 M = 0.6 
.MODEL DSUB D IS = 2.295E-010 N = 1.289 RS = 0.003381 BV = 67 CJO = 3.016E-010 VJ = 0.6 M = 0.6 TT=9E-09
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMNH6022SSD Spice Model v1.0M Last Revised 2016/4/28


*---------- DMNH6022SSDQ Spice Model ----------
.SUBCKT DMNH6022SSDQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01507 
RS 30 3 0.001 
RG 20 2 1.95 
CGS 2 3 1.906E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.91 
+ TOX = 6E-008 NSUB = 1E+016 KP = 27.65 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 4.087E-010 VJ = 0.6996 M = 0.6 
.MODEL DSUB D IS = 2.295E-010 N = 1.289 RS = 0.003381 BV = 67 CJO = 3.016E-010 VJ = 0.6 M = 0.6 TT=9E-09
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMNH6022SSDQ Spice Model v1.0M Last Revised 2016/4/28


*---------- DMNH6012LK3 Spice Model ----------
.SUBCKT DMNH6012LK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.004237 
RS 30 3 0.001 
RG 20 2 2 
CGS 2 3 1.998E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.301E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.907 
+ TOX = 6E-008 NSUB = 1E+016 KP = 68.11 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 6.216E-010 VJ = 1 M = 0.9231 
.MODEL DSUB D IS = 2.336E-010 N = 1.151 RS = 0.0009964 BV = 71 CJO = 1.485E-009 VJ = 0.7681 M = 0.4279 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMNH6012LK3  Spice Model v1.0 Last Revised 2015/04/12



*---------- DMNH6012LK3Q Spice Model ----------
.SUBCKT DMNH6012LK3Q 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.004237 
RS 30 3 0.001 
RG 20 2 2 
CGS 2 3 1.998E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.301E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.907 
+ TOX = 6E-008 NSUB = 1E+016 KP = 68.11 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 6.216E-010 VJ = 1 M = 0.9231 
.MODEL DSUB D IS = 2.336E-010 N = 1.151 RS = 0.0009964 BV = 71 CJO = 1.485E-009 VJ = 0.7681 M = 0.4279 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMNH6012LK3Q  Spice Model v1.0 Last Revised 2015/04/12


*---------- DMNH6042SPD Spice Model ----------
.SUBCKT DMNH6042SPD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.02382 
RS 30 3 0.001 
RG 20 2 3.84 
CGS 2 3 4.735E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.8E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.931 
+ TOX = 6E-008 NSUB = 1E+016 KP = 29.13 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.626E-010 VJ = 0.6807 M = 0.6 
.MODEL DSUB D IS = 2.317E-010 N = 1.22 RS = 0.005274 BV = 70 CJO = 1E-010 VJ = 0.6065 M = 0.6033 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMNH6042SPD Spice Model v1.0M Last Revised 2016/3/4


*---------- DMNH6042SPDQ Spice Model ----------
.SUBCKT DMNH6042SPDQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.02382 
RS 30 3 0.001 
RG 20 2 3.84 
CGS 2 3 4.735E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.8E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.931 
+ TOX = 6E-008 NSUB = 1E+016 KP = 29.13 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.626E-010 VJ = 0.6807 M = 0.6 
.MODEL DSUB D IS = 2.317E-010 N = 1.22 RS = 0.005274 BV = 70 CJO = 1E-010 VJ = 0.6065 M = 0.6033 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMNH6042SPDQ Spice Model v1.0M Last Revised 2016/4/28


*---------- DMNH6042SSD Spice Model ----------
.SUBCKT DMNH6042SSD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.02382 
RS 30 3 0.001 
RG 20 2 3.84 
CGS 2 3 4.735E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.8E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.931 
+ TOX = 6E-008 NSUB = 1E+016 KP = 29.13 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.626E-010 VJ = 0.6807 M = 0.6 
.MODEL DSUB D IS = 2.317E-010 N = 1.22 RS = 0.005274 BV = 70 CJO = 1E-010 VJ = 0.6065 M = 0.6033 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMNH6042SSD Spice Model v1.0M Last Revised 2016/3/4


*---------- DMT6005LCT Spice Model ----------
.SUBCKT DMT6005LCT 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.003586 
RS 30 3 1E-008 
RG 20 2 0.66 
CGS 2 3 3.195E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.3E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.272 
+ TOX = 6E-008 NSUB = 1E+016 KP = 222.2 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 5.577E-010 VJ = 1 M = 0.9082 
.MODEL DSUB D IS = 4.976E-010 N = 1.224 RS = 0.001644 BV = 70 CJO = 2.885E-009 VJ = 1 M = 0.9133 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT6005LCT  Spice Model v1.0M Last Revised 2016/6/1


*---------- DMN6013LFGQ Spice Model ----------
.SUBCKT DMN6013LFGQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.005556 
RS 30 3 0.001 
RG 20 2 1.49 
CGS 2 3 2.658E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.56E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.766 
+ TOX = 6E-008 NSUB = 1E+016 KP = 67.2 U0 = 400 KAPPA = 38.59 
.MODEL DCGD D CJO = 1.231E-009 VJ = 0.6368 M = 0.5502 
.MODEL DSUB D IS = 5E-011 N = 1.108 RS = 0.002574 
+ BV = 70 CJO = 5.209E-010 VJ = 0.9791 M = 0.89 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN6013LFGQ Spice Model v1.0M Last Revised 2016/5/3


*---------- DMNH6042SPS Spice Model ----------
.SUBCKT DMNH6042SPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.02382 
RS 30 3 0.001 
RG 20 2 3.84 
CGS 2 3 4.735E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.8E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.931 
+ TOX = 6E-008 NSUB = 1E+016 KP = 29.13 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.626E-010 VJ = 0.6807 M = 0.6 
.MODEL DSUB D IS = 2.317E-010 N = 1.22 RS = 0.005274 BV = 70 CJO = 1E-010 VJ = 0.6065 M = 0.6033 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMNH6042SPS Spice Model v1.0M Last Revised 2016/3/4


*---------- DMTH6009LPS Spice Model ----------
.SUBCKT DMTH6009LPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.006099 
RS 30 3 1E-008 
RG 20 2 1.71 
CGS 2 3 2.016E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.086 
+ TOX = 6E-008 NSUB = 1E+016 KP = 136.4 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 4.367E-010 VJ = 1 M = 0.5797 
.MODEL DSUB D IS = 2.239E-010 N = 1.183 RS = 0.005972 BV = 67 CJO = 8.953E-010 VJ = 1 M = 0.201 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH6009LPS  Spice Model v1.0M Last Revised 2016/5/4


*---------- DMTH4004SK3Q Spice Model ----------
.SUBCKT DMTH4004SK3Q 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001299 
RS 30 3 0.001 
RG 20 2 0.77 
CGS 2 3 4.614E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.5E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.189 
+ TOX = 6E-008 NSUB = 1E+016 KP = 66.04 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 5.071E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 9.177E-009 N = 1.352 RS = 9.544E-005 BV = 50 CJO = 6.893E-010 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH4004SK3Q Spice Model v1.0 Last Revised 2016/7/21


*---------- DMNH6042SK3 Spice Model ----------
.SUBCKT DMNH6042SK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.02382 
RS 30 3 0.001 
RG 20 2 3.84 
CGS 2 3 4.735E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.8E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.931 
+ TOX = 6E-008 NSUB = 1E+016 KP = 29.13 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.626E-010 VJ = 0.6807 M = 0.6 
.MODEL DSUB D IS = 2.317E-010 N = 1.22 RS = 0.005274 BV = 70 CJO = 1E-010 VJ = 0.6065 M = 0.6033 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMNH6042Sk3 Spice Model v1.0M Last Revised 2016/3/4



*---------- DMNH6042SK3Q Spice Model ----------
.SUBCKT DMNH6042SK3Q 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.02382 
RS 30 3 0.001 
RG 20 2 3.84 
CGS 2 3 4.735E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.8E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.931 
+ TOX = 6E-008 NSUB = 1E+016 KP = 29.13 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.626E-010 VJ = 0.6807 M = 0.6 
.MODEL DSUB D IS = 2.317E-010 N = 1.22 RS = 0.005274 BV = 70 CJO = 1E-010 VJ = 0.6065 M = 0.6033 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMNH6042Sk3Q Spice Model v1.0M Last Revised 2016/3/4



*---------- DMNH4015SSD Spice Model ----------
.SUBCKT DMNH4015SSD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.005294 
RS 30 3 0.001 
RG 20 2 1.79 
CGS 2 3 1.835E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.15E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.131 
+ TOX = 6E-008 NSUB = 1E+016 KP = 64.22 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 6.395E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.266E-010 N = 1.191 RS = 0.003973 BV = 45 CJO = 2.425E-010 VJ = 0.8 M = 0.6 TT=5E-09
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMNH4015SSD Spice Model v1.0M Last Revised 2016/7/18



*---------- DMNH4015SSDQ Spice Model ----------
.SUBCKT DMNH4015SSDQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.005294 
RS 30 3 0.001 
RG 20 2 1.79 
CGS 2 3 1.835E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.15E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.131 
+ TOX = 6E-008 NSUB = 1E+016 KP = 64.22 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 6.395E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.266E-010 N = 1.191 RS = 0.003973 BV = 45 CJO = 2.425E-010 VJ = 0.8 M = 0.6 TT=5E-09
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMNH4015SSDQ Spice Model v1.0M Last Revised 2016/7/18



*---------- DMTH6016LPSQ Spice Model ----------
.SUBCKT DMTH6016LPSQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.006728 
RS 30 3 0.001 
RG 20 2 1.35 
CGS 2 3 8.475E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 6E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.61 
+ TOX = 6E-008 NSUB = 1E+016 KP = 37.72 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 3.945E-010 VJ = 0.8 M = 0.6507 
.MODEL DSUB D IS = 2.448E-010 N = 1.248 RS = 0.006471 BV = 60 CJO = 5.274E-010 VJ = 0.8 M = 0.6 TT=2.2E-010
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH6016LPSQ Spice Model v1.0M Last Revised 2016/7/22


*---------- DMNH4011SPS Spice Model ----------
.SUBCKT DMNH4011SPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.004592 
RS 30 3 0.001 
RG 20 2 2.19 
CGS 2 3 1.266E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 9E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.749 
+ TOX = 6E-008 NSUB = 1E+016 KP = 48.89 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 8.203E-010 VJ = 0.6 M = 0.6 
.MODEL DSUB D IS = 2.926E-010 N = 1.193 RS = 0.001056 BV = 55 CJO = 8.778E-010 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMNH4011SPS Spice Model v1.0M Last Revised 2016/04/28



*---------- DMNH6008SCT Spice Model ----------
.SUBCKT DMNH6008SCT 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001343 
RS 30 3 0.001 
RG 20 2 1.35 
CGS 2 3 2.757E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.209 
+ TOX = 6E-008 NSUB = 1E+016 KP = 43.04 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 4.614E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.22E-010 N = 1.156 RS = 4.441E-010 BV = 68 CJO = 2E-009 VJ = 0.8 M = 0.6 TT=1.6E-08
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMNH6008SCT Spice Model v1.0M Last Revised 2016/3/31



*---------- DMNH6042SPSQ Spice Model ----------
.SUBCKT DMNH6042SPSQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.02382 
RS 30 3 0.001 
RG 20 2 3.84 
CGS 2 3 4.735E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.8E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.931 
+ TOX = 6E-008 NSUB = 1E+016 KP = 29.13 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.626E-010 VJ = 0.6807 M = 0.6 
.MODEL DSUB D IS = 2.317E-010 N = 1.22 RS = 0.005274 BV = 70 CJO = 1E-010 VJ = 0.6065 M = 0.6033 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMNH6042SPSQ Spice Model v1.0M Last Revised 2016/3/4



*---------- DMNH6042SSDQ Spice Model ----------
.SUBCKT DMNH6042SSDQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.02382 
RS 30 3 0.001 
RG 20 2 3.84 
CGS 2 3 4.735E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.8E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.931 
+ TOX = 6E-008 NSUB = 1E+016 KP = 29.13 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.626E-010 VJ = 0.6807 M = 0.6 
.MODEL DSUB D IS = 2.317E-010 N = 1.22 RS = 0.005274 BV = 70 CJO = 1E-010 VJ = 0.6065 M = 0.6033 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMNH6042SSDQ Spice Model v1.0M Last Revised 2016/3/4


*---------- DMT4002LPS Spice Model ----------
.SUBCKT DMT4002LPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 5E-008 
RS 30 3 0.001 
RG 20 2 0.85 
CGS 2 3 6.987E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 3.8E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.461 
+ TOX = 6E-008 NSUB = 1E+016 KP = 290.9 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 2.21E-009 VJ = 0.8 M = 0.7963 
.MODEL DSUB D IS = 2.268E-010 N = 1.123 RS = 0.0001872 BV = 45 CJO = 5E-009 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT4002LPS Spice Model v1.0M Last Revised 2016/8/31


*---------- DMNH4005SCTQ Spice Model ----------
.SUBCKT DMNH4005SCTQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001 
RS 30 3 0.001 
RG 20 2 1.66 
CGS 2 3 2.804E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.37 
+ TOX = 6E-008 NSUB = 1E+016 KP = 102.4 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 8E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.268E-010 N = 1.123 RS = 0.0001872 BV = 51 CJO = 3E-009 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMNH4005SCTQ Spice Model v1.0M Last Revised 2016/8/30


*---------- DMT6002LPS Spice Model ----------
.SUBCKT DMT6002LPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.0001 
RS 30 3 0.001 
RG 20 2 0.68 
CGS 2 3 8E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 4.2E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.549 
+ TOX = 6E-008 NSUB = 1E+016 KP = 212 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 2.254E-009 VJ = 0.8 M = 0.6192 
.MODEL DSUB D IS = 2.249E-010 N = 1.121 RS = 0.0001411 BV = 68 CJO = 4.5E-009 VJ = 0.8 M = 0.6 TT = 3.1E-08
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT6002LPS Spice Model v1.0M Last Revised 2016/8/31


*---------- DMNH4005SCT Spice Model ----------
.SUBCKT DMNH4005SCT 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001 
RS 30 3 0.001 
RG 20 2 1.66 
CGS 2 3 2.804E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.37 
+ TOX = 6E-008 NSUB = 1E+016 KP = 102.4 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 8E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.268E-010 N = 1.123 RS = 0.0001872 BV = 51 CJO = 3E-009 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMNH4005SCT Spice Model v1.0M Last Revised 2016/8/30



*---------- DMNH4026SSD Spice Model ----------
.SUBCKT DMNH4026SSD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.007676 
RS 30 3 0.001 
RG 20 2 1.5 
CGS 2 3 1.176E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 8E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.129 
+ TOX = 6E-008 NSUB = 1E+016 KP = 40 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 2.925E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.232E-010 N = 1.234 RS = 0.004374 BV = 48 CJO = 2.224E-010 VJ = 0.7963 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMNH4026SSD Spice Model v1.0 Last Revised 2015/6/17



*---------- DMNH4026SSDQ Spice Model ----------
.SUBCKT DMNH4026SSDQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.007676 
RS 30 3 0.001 
RG 20 2 1.5 
CGS 2 3 1.176E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 8E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.129 
+ TOX = 6E-008 NSUB = 1E+016 KP = 40 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 2.925E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.232E-010 N = 1.234 RS = 0.004374 BV = 48 CJO = 2.224E-010 VJ = 0.7963 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMNH4026SSDQ Spice Model v1.0 Last Revised 2015/6/17



*---------- DMNH4005SPSQ Spice Model ----------
.SUBCKT DMNH4005SPSQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001 
RS 30 3 0.001 
RG 20 2 1.66 
CGS 2 3 2.804E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.37 
+ TOX = 6E-008 NSUB = 1E+016 KP = 102.4 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 8E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.268E-010 N = 1.123 RS = 0.0001872 BV = 51 CJO = 3E-009 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMNH4005SPSQ Spice Model v1.0M Last Revised 2016/10/21


*---------- DMT4011LFG Spice Model ----------
.SUBCKT DMT4011LFG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.004622 
RS 30 3 0.001 
RG 20 2 0.98 
CGS 2 3 7.377E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 6.2E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.084 
+ TOX = 6E-008 NSUB = 1E+016 KP = 50.72 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 3.891E-010 VJ = 0.8 M = 0.7987 
.MODEL DSUB D IS = 4.2E-010 N = 1.244 RS = 0.006966 BV = 44 CJO = 5.719E-010 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT4011LFG Spice Model v1.0 Last Revised 2016/10/28



*---------- DMTH6004LPSQ Spice Model ----------
.SUBCKT DMTH6004LPSQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.0001798 
RS 30 3 0.001659 
RG 20 2 0.64 
CGS 2 3 4.923E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 3.7E-009 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8E+005  ETA = 0.001  VTO = 2.095 
+ TOX = 6E-008  NSUB = 1E+016  KP = 287.2  U0 = 400  KAPPA = 4.441E-010 
.MODEL DCGD D  CJO = 1.864E-009  VJ = 1  M = 0.7538 
.MODEL DSUB D  IS = 1.026E-008  N = 1.357  RS = 4.441E-010  BV = 65  CJO = 3E-009  VJ = 0.8  M = 0.3 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMTH6004LPSQ Spice Model v1.0 Last Revised 2016/10/28



*ZETEX ZVN0124A Spice Model v1.1 Last Revised 3/5/00
    *
    .SUBCKT ZVN0124A 3 4 5
    *                D G S
    M1 3 2 5 5 MN0124
    RG 4 2 225
    RL 3 5 2.4E7
    C1 2 5 60E-12
    C2 3 2 2E-12 
    D1 5 3 DN0124
    *
    .MODEL MN0124 NMOS VTO=1.5512 RS=1.436 RD=9.254 IS=1E-15 KP=1.077
    +CBD=36E-12 PB=1 LAMBDA=0
    .MODEL DN0124 D IS=3.071E-12 N=1.026 RS=0.511
    .ENDS ZVN0124A
    *
    *$
    *


*ZETEX ZVN0540A Spice Model v1.0 Last Revised 4/8/04
    *
    *
    .SUBCKT ZVN0540A 3 4 5
    *                D G S
    M1 6 20 8 8 MOSMOD
    M2 6 20 8 8 MOSMODS
    RG 4 2 55
    RIN 2 8 200E6
    RD 3 6 RMOD1 40
    RS 8 5 RMOD1 2.5 
    RL 3 5 200E6
    C1 2 8 160E-12
    C2 17 3 2E-12 
    D1 5 3 DMOD1
    D2 17 3 DMOD2
    Egs1 2 17 2 8 1
    Egt1 2 20 21 5 1
    Vgt1 5 22 1
    Igt1 5 21 1
    Rgt 21 22 RMOD2 1
    .MODEL MOSMOD NMOS VTO=2.26 IS=1E-15 KP=.59 CBD=15E-12 PB=1 LAMBDA=4.9E-3
    .MODEL MOSMODS NMOS VTO=1.9 IS=1E-15 KP=0.02 PB=1
    .MODEL DMOD1 D IS=2E-13 RS=10 N=1.01 IKF=3e-3
    .MODEL DMOD2 D CJO=25e-12 IS=1e-30 N=10
    .MODEL RMOD1 RES (TC1=8E-3 TC2=1.7E-5)
    .MODEL RMOD2 RES (TC1=-2.5e-3 TC2=3.3e-6)
    .ENDS
    *
    *$
    *


*ZETEX ZVN0545A Spice Model v1.0 Last Revised 20/5/04
    *
    *
    .SUBCKT ZVN0545A 3 4 5
    *                D G S
    M1 6 20 8 8 MOSMOD
    M2 6 20 8 8 MOSMODS
    RG 4 2 55
    RIN 2 8 200E6
    RD 3 6 RMOD1 40
    RS 8 5 RMOD1 2.5 
    RL 3 5 200E6
    C1 2 8 160E-12
    C2 17 3 2E-12 
    D1 5 3 DMOD1
    D2 17 3 DMOD2
    Egs1 2 17 2 8 1
    Egt1 2 20 21 5 1
    Vgt1 5 22 1
    Igt1 5 21 1
    Rgt 21 22 RMOD2 1
    .MODEL MOSMOD NMOS VTO=2.26 IS=1E-15 KP=.59 CBD=15E-12 PB=1 LAMBDA=4.9E-3
    .MODEL MOSMODS NMOS VTO=1.9 IS=1E-15 KP=0.02 PB=1
    .MODEL DMOD1 D IS=2E-13 RS=10 N=1.01 IKF=3e-3
    .MODEL DMOD2 D CJO=25e-12 IS=1e-30 N=10
    .MODEL RMOD1 RES (TC1=8E-3 TC2=1.7E-5)
    .MODEL RMOD2 RES (TC1=-2.5e-3 TC2=3.3e-6)
    .ENDS
    *
    *$
    *


*ZETEX ZVN0545G Spice Model v1.0 Last Revised 20/5/04
    *
    *
    .SUBCKT ZVN0545G 3 4 5
    *                D G S
    M1 6 20 8 8 MOSMOD
    M2 6 20 8 8 MOSMODS
    RG 4 2 55
    RIN 2 8 200E6
    RD 3 6 RMOD1 40
    RS 8 5 RMOD1 2.5 
    RL 3 5 200E6
    C1 2 8 160E-12
    C2 17 3 2E-12 
    D1 5 3 DMOD1
    D2 17 3 DMOD2
    Egs1 2 17 2 8 1
    Egt1 2 20 21 5 1
    Vgt1 5 22 1
    Igt1 5 21 1
    Rgt 21 22 RMOD2 1
    .MODEL MOSMOD NMOS VTO=2.26 IS=1E-15 KP=.59 CBD=15E-12 PB=1 LAMBDA=4.9E-3
    .MODEL MOSMODS NMOS VTO=1.9 IS=1E-15 KP=0.02 PB=1
    .MODEL DMOD1 D IS=2E-13 RS=10 N=1.01 IKF=3e-3
    .MODEL DMOD2 D CJO=25e-12 IS=1e-30 N=10
    .MODEL RMOD1 RES (TC1=8E-3 TC2=1.7E-5)
    .MODEL RMOD2 RES (TC1=-2.5e-3 TC2=3.3e-6)
    .ENDS
    *
    *$
    *


*ZETEX ZVN2110A Spice Model v1.1 Last Revised 3/5/00
    *
    .SUBCKT ZVN2110A 3 4 5
    *               D G S
    M1 3 2 5 5 MN2110a
    M2 3 2 5 5 MN2110b
    RG 4 2 200
    RL 3 5 1E9
    C1 2 5 50E-12
    C2 3 2 5E-12
    D1 5 3 DN2110a
    *
    .MODEL MN2110a NMOS VTO=2 RS=.1 RD=1.8 IS=1E-15 KP=0.3
    +CBD=60E-12 PB=1 LAMBDA=2.6E-3
    .MODEL MN2110b NMOS VTO=0.9 RS=2 KP=0.1 PB=1 LAMBDA=2.6E-3
    .MODEL DN2110a D IS=1E-12 RS=0.37
    .ENDS ZVN2110A
    *
    *$
    *


*ZETEX ZVN2110G Spice Model v1.1 Last Revised 3/5/00
    *
    .SUBCKT ZVN2110G 3 4 5
    *               D G S
    M1 3 2 5 5 MN2110a
    M2 3 2 5 5 MN2110b
    RG 4 2 200
    RL 3 5 1E9
    C1 2 5 50E-12
    C2 3 2 5E-12
    D1 5 3 DN2110a
    *
    .MODEL MN2110a NMOS VTO=2 RS=.1 RD=1.8 IS=1E-15 KP=0.3
    +CBD=60E-12 PB=1 LAMBDA=2.6E-3
    .MODEL MN2110b NMOS VTO=0.9 RS=2 KP=0.1 PB=1 LAMBDA=2.6E-3
    .MODEL DN2110a D IS=1E-12 RS=0.37
    .ENDS ZVN2110G
    *
    *$
    *


*ZETEX ZVN2120G Spice Model v2.1 Last Revised 12/10/06
    *
    .SUBCKT ZVN2120G 3 4 5
    *               D G S
    M1 30 2 50 50 Mmod1
    M2 30 2 50 50 Mmod2
    RG 4 2 35
    RIN 2 5 2E10
    RL 3 5 2E8
    RD 31 30 Rmod1 7
    RS 50 51 1.0
    C1 2 50 60E-12
    C2 3 2 6E-12
    C3 12 50 50E-12
    C4 15 14 100E-12
    D1 5 3 Dmod1
    VX 51 5 0
    H1 60 5 VX 10
    S3 3 31 60 5 Smod3
    S1A 2 12 13 50 Smod1a
    S1B 13 12 13 50 Smod1b
    S2A 2 15 14 13 Smod2a
    S2B 13 15 14 13 Smod2b
    Egs1 13 50 2 50 1
    Eds1 14 50 30 50 1
    *
    .MODEL Mmod1 NMOS VTO=1.8 IS=1E-15 KP=0.5 PB=1 LAMBDA=1.5E-3
    .MODEL Mmod2 NMOS VTO=1.3 RS=2 KP=0.1 PB=1 LAMBDA=1.5E-3
    .MODEL Dmod1 D IS=1E-12 BV=220 RS=1 CJO=124E-12 M=0.7 VJ=0.36
    .MODEL Smod1a VSWITCH RON=.001 ROFF=100  VON=-6 VOFF=-4
    .MODEL Smod1b VSWITCH RON=.001 ROFF=100  VON=-4 VOFF=-6
    .MODEL Smod2a VSWITCH RON=.001 ROFF=100  VON=-1.5 VOFF=1.5
    .MODEL Smod2b VSWITCH RON=.001 ROFF=100  VON=1.5 VOFF=-1.5
    .MODEL Smod3 VSWITCH RON=0.1 ROFF=90  VON=4.5 VOFF=25
    .MODEL Rmod1 RES (TC1=8E-3 TC2=1.8E-5)
    .ENDS ZVN2120G
    *
    *$
    *


*ZETEX ZVN3310A Spice Model v1.1 Last Revised 3/5/00
    *              
    .SUBCKT ZVN3310A 3 4 5
    * NODES: DRAIN GATE SOURCE
    M1 3 2 5 5 MOD1   
    RG 4 2 356
    RL 3 5 1E8
    C1 2 5 21.5P
    C2 3 2 2.5P 
    D1 5 3 DIODE1
    *
    .MODEL MOD1 NMOS VTO=1.736 RS=2.147 RD=1.682 IS=1E-15 KP=0.157
    +CBD=25.5P PB=1
    .MODEL DIODE1 D IS=6.12E-13 RS=.629
    .ENDS ZVN3310A
    *
    *$
    *


*ZETEX ZVN3310F Spice Model v1.1 Last Revised 3/5/00
    *              
    .SUBCKT ZVN3310F 3 4 5
    * NODES: DRAIN GATE SOURCE
    M1 3 2 5 5 MOD1   
    RG 4 2 356
    RL 3 5 1E8
    C1 2 5 21.5P
    C2 3 2 2.5P 
    D1 5 3 DIODE1
    *
    .MODEL MOD1 NMOS VTO=1.736 RS=2.147 RD=1.682 IS=1E-15 KP=0.157
    +CBD=25.5P PB=1
    .MODEL DIODE1 D IS=6.12E-13 RS=.629
    .ENDS ZVN3310F
    *
    *$
    *


*ZETEX ZVN3320F Spice Model v1.0 Last Revised 27/5/02
    *              
    .SUBCKT ZVN3320F 3 4 5
    * ----connections---- D G S 
    *
    M1 6 2 8 8 MOSMOD
    M2 6 2 8 8 MOSMODS
    RG 4 2 190
    RIN 2 8 200E6
    RD 3 6 RDSMOD 18
    RS 8 5 RDSMOD 1.5 
    RL 3 5 35E6
    C1 2 8 6.5E-12
    *C2 2 3 1E-12 
    C3 15 14 3.8E-12
    C4 16 8 5.3E-12
    D1 5 3 DMOD1
    D2 17 3  DMOD2
    S1 2 15 13 14 SMOD1a
    S2 13 15 13 14 SMOD1b
    S3 16 13 8 13 SMOD2a
    S4 16 2 8 13 SMOD2b
    Egs1 2 17 2 8 1
    Egs2 13 8 2 8 1
    Eds1 14 8 3 8 1
    .MODEL MOSMOD NMOS VTO=1.55 IS=1E-15 KP=0.07 CBD=39E-12 PB=1 LAMBDA=4.9E-3
    .MODEL MOSMODS NMOS VTO=0.8 IS=1E-15 KP=0.007 PB=1
    .MODEL DMOD1 D IS=3E-8 RS=.17 N=1.95 TT=1e-9 BV=220 IBV=1E-3
    .MODEL DMOD2 D CJO=1.8E-12 IS=1E-30 N=10
    .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4  VON=1 VOFF=-1
    .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4  VON=-1 VOFF=1
    .MODEL SMOD2a VSWITCH RON=1e2 ROFF=1e4  VON=1.5 VOFF=3.5
    .MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4  VON=3.5 VOFF=1.5
    .MODEL RDSMOD RES (TC1=7E-3 TC2=4.2E-5)
    .ENDS ZVN3320F
    *
    *$
    *


*ZETEX ZVN4210A Spice Model v1.1 Last Revised 3/5/00
    *
    .SUBCKT ZVN4210A 3 4 5
    * Nodes          D G S
    M1 3 2 5 5 MOD1
    RG 4 2 401.5
    RL 3 5 1E7
    C1 2 5 61.5P
    C2 3 2 3.5P 
    D1 5 3 DIODE1
    *
    .MODEL MOD1 NMOS VTO=1.922 RS=0.858 RD=0.2025 IS=1E-15 KP=2.082
    +CBD=108P PB=1 LAMBDA=0
    .MODEL DIODE1 D IS=1.10461E-12 N=1.0114 RS=0.166
    .ENDS ZVN4210A
    *
    *$
    *


*ZETEX ZVN4210G Spice Model v1.1 Last Revised 3/5/00
    *
    .SUBCKT ZVN4210G 3 4 5
    * Nodes          D G S
    M1 3 2 5 5 MOD1
    RG 4 2 401.5
    RL 3 5 1E7
    C1 2 5 61.5P
    C2 3 2 3.5P 
    D1 5 3 DIODE1
    *
    .MODEL MOD1 NMOS VTO=1.922 RS=0.858 RD=0.2025 IS=1E-15 KP=2.082
    +CBD=108P PB=1 LAMBDA=0
    .MODEL DIODE1 D IS=1.10461E-12 N=1.0114 RS=0.166
    .ENDS ZVN4210G
    *
    *$
    *


*ZETEX ZVN4310A Spice Model v1.1 Last Revised 8/2/02
    *
    .SUBCKT ZVN4310A 3 4 5
    *NODES: DRAIN GATE SOURCE
    M1 3 2 5 5 MOD1
    RG 4 2 82
    RL 3 5 1E7
    C1 2 5 200E-12
    C2 3 2 13.5E-12 
    D1 5 3 DIODE1
    *
    .MODEL MOD1 NMOS VTO=2.555 RS=0.2068 RD=0.1665 IS=1E-15 KP=5.02
    +CBD=288E-12 PB=1 LAMBDA=0
    .MODEL DIODE1 D IS=9.759E-13 N=1.02476 RS=0.0844
    .ENDS ZVN4310A
    *
    *$
    *


*ZETEX ZVN4310G Spice Model v1.1 Last Revised 8/2/02
    *
    .SUBCKT ZVN4310G 3 4 5
    *NODES: DRAIN GATE SOURCE
    M1 3 2 5 5 MOD1
    RG 4 2 82
    RL 3 5 1E7
    C1 2 5 200E-12
    C2 3 2 13.5E-12 
    D1 5 3 DIODE1
    *
    .MODEL MOD1 NMOS VTO=2.555 RS=0.2068 RD=0.1665 IS=1E-15 KP=5.02
    +CBD=288E-12 PB=1 LAMBDA=0
    .MODEL DIODE1 D IS=9.759E-13 N=1.02476 RS=0.0844
    .ENDS ZVN4310G
    *
    *$
    *


*ZETEX ZVN4424A Spice Model v1.2 Last Revised 20/3/01
    *
    .SUBCKT ZVN4424A 3 4 5
    *------connections-------D-G-S
    M1 6 2 8 8 N4424AM
    M2 6 2 8 8 N4424AMS
    RG 4 2 9
    RD 3 6 3.6
    RS 8 5 0.15 
    RL 3 5 240E6
    C1 2 8 137E-12
    C2 2 3  15E-12
    C3 15 14 385E-12 
    C4 16 8 220E-12
    D1 5 3 N4424AD
    S1 2 15 13 14 SMOD1
    S2 13 15 14 13 SMOD1
    S3 16 13 13 8 SMOD2
    S4 16 2 8 13 SMOD2
    Egs2 13 8 2 8 1
    Eds1 14 8 3 8 1
    .MODEL N4424AM NMOS VTO=1.3 IS=1E-15 KP=0.85
    +CBD=66.2E-12 PB=1
    .MODEL N4424AMS NMOS VTO=.86 IS=1E-15 KP=0.0085
    +CBD=.66E-12 PB=1
    .MODEL N4424AD D IS=5.516E-13 RS=.2084 N=1.0078
    .MODEL SMOD1 VSWITCH RON=.001 ROFF=100  VON=1.5 VOFF=1
    .MODEL SMOD2 VSWITCH RON=.001 ROFF=100  VON=-0.5 VOFF=-2.5
    .ENDS ZVN4424A
    *
    *$
    *


*ZETEX ZVN4424G Spice Model v1.2 Last Revised 20/3/01
    *
    .SUBCKT ZVN4424G 3 4 5
    *------connections-------D-G-S
    M1 6 2 8 8 N4424AM
    M2 6 2 8 8 N4424AMS
    RG 4 2 9
    RD 3 6 3.6
    RS 8 5 0.15 
    RL 3 5 240E6
    C1 2 8 137E-12
    C2 2 3  15E-12
    C3 15 14 385E-12 
    C4 16 8 220E-12
    D1 5 3 N4424AD
    S1 2 15 13 14 SMOD1
    S2 13 15 14 13 SMOD1
    S3 16 13 13 8 SMOD2
    S4 16 2 8 13 SMOD2
    Egs2 13 8 2 8 1
    Eds1 14 8 3 8 1
    .MODEL N4424AM NMOS VTO=1.3 IS=1E-15 KP=0.85
    +CBD=66.2E-12 PB=1
    .MODEL N4424AMS NMOS VTO=.86 IS=1E-15 KP=0.0085
    +CBD=.66E-12 PB=1
    .MODEL N4424AD D IS=5.516E-13 RS=.2084 N=1.0078
    .MODEL SMOD1 VSWITCH RON=.001 ROFF=100  VON=1.5 VOFF=1
    .MODEL SMOD2 VSWITCH RON=.001 ROFF=100  VON=-0.5 VOFF=-2.5
    .ENDS ZVN4424G
    *
    *$
    *


*ZETEX ZVN4525E6 Spice Model v1.0 Last Revised 4/8/2004
    *
    .SUBCKT  ZVN4525E6 3 4 5
    *------connections-------D-G-S
    M1 6 20 8 8 MOSMOD1
    M2 6 20 8 8 MOSMOD2
    RG 4 2 7
    RIN 2 8 200E6
    RD 3 6 RMOD1 4.8
    RS 8 5 RMOD1 0.2 
    RL 3 5 250E6
    C1 2 8 80E-12
    C2 2 3  12E-12
    C3 15 14 175E-12
    C4 16 8 175E-12
    D1 5 3 DMOD1
    S1 2 15 14 13 SMOD1a
    S2 13 15 14 13 SMOD1b
    S3 16 13 13 8 SMOD2a
    S4 16 2 13 8 SMOD2b
    Egs2 13 8 2 8 1
    Eds1 14 8 3 8 1
    Egt1 2 20 21 5 1
    Vgt1 5 22 1
    Igt1 5 21 1
    Rgt 21 22 RMOD2 1
    .MODEL MOSMOD1 NMOS VTO=1.3 IS=1E-15 KP=0.46
    .MODEL MOSMOD2 NMOS VTO=.86 IS=1E-15 KP=0.0046
    .MODEL DMOD1 D IS=4.14E-13 RS=.278 N=1.0078 CJO=130E-12
    .MODEL SMOD1a VSWITCH RON=.01 ROFF=1e3  VON=-1.7 VOFF=2.75
    .MODEL SMOD1b VSWITCH RON=.01 ROFF=1e3  VON=2.75 VOFF=-1.7
    .MODEL SMOD2a VSWITCH RON=.01 ROFF=1e3  VON=-1.5 VOFF=-3.5
    .MODEL SMOD2b VSWITCH RON=.01 ROFF=1e3  VON=-3.5 VOFF=-1.5
    .MODEL RMOD1 RES (TC1=8.9e-3 TC2=3e-5)
    .MODEL RMOD2 RES (TC1=-2.5e-3 TC2=3.3e-6)
    .ENDS
    *
    *$
    *


*ZETEX ZVN4525G Spice Model v1.0 Last Revised 21/05/2004
    *
    .SUBCKT  ZVN4525G 3 4 5
    *------connections-------D-G-S
    M1 6 20 8 8 MOSMOD1
    M2 6 20 8 8 MOSMOD2
    RG 4 2 7
    RIN 2 8 200E6
    RD 3 6 RMOD1 4.8
    RS 8 5 RMOD1 0.2 
    RL 3 5 250E6
    C1 2 8 80E-12
    C2 2 3  12E-12
    C3 15 14 175E-12
    C4 16 8 175E-12
    D1 5 3 DMOD1
    S1 2 15 14 13 SMOD1a
    S2 13 15 14 13 SMOD1b
    S3 16 13 13 8 SMOD2a
    S4 16 2 13 8 SMOD2b
    Egs2 13 8 2 8 1
    Eds1 14 8 3 8 1
    Egt1 2 20 21 5 1
    Vgt1 5 22 1
    Igt1 5 21 1
    Rgt 21 22 RMOD2 1
    .MODEL MOSMOD1 NMOS VTO=1.3 IS=1E-15 KP=0.46
    .MODEL MOSMOD2 NMOS VTO=.86 IS=1E-15 KP=0.0046
    .MODEL DMOD1 D IS=4.14E-13 RS=.278 N=1.0078 CJO=130E-12
    .MODEL SMOD1a VSWITCH RON=.01 ROFF=1e3  VON=-1.7 VOFF=2.75
    .MODEL SMOD1b VSWITCH RON=.01 ROFF=1e3  VON=2.75 VOFF=-1.7
    .MODEL SMOD2a VSWITCH RON=.01 ROFF=1e3  VON=-1.5 VOFF=-3.5
    .MODEL SMOD2b VSWITCH RON=.01 ROFF=1e3  VON=-3.5 VOFF=-1.5
    .MODEL RMOD1 RES (TC1=8.9e-3 TC2=3e-5)
    .MODEL RMOD2 RES (TC1=-2.5e-3 TC2=3.3e-6)
    .ENDS
    *
    *$
    *


*ZETEX ZVN4525Z Spice Model v1.0 Last Revised 4/8/2004
    *
    .SUBCKT  ZVN4525Z 3 4 5
    *------connections-------D-G-S
    M1 6 20 8 8 MOSMOD1
    M2 6 20 8 8 MOSMOD2
    RG 4 2 7
    RIN 2 8 200E6
    RD 3 6 RMOD1 4.8
    RS 8 5 RMOD1 0.2 
    RL 3 5 250E6
    C1 2 8 80E-12
    C2 2 3  12E-12
    C3 15 14 175E-12
    C4 16 8 175E-12
    D1 5 3 DMOD1
    S1 2 15 14 13 SMOD1a
    S2 13 15 14 13 SMOD1b
    S3 16 13 13 8 SMOD2a
    S4 16 2 13 8 SMOD2b
    Egs2 13 8 2 8 1
    Eds1 14 8 3 8 1
    Egt1 2 20 21 5 1
    Vgt1 5 22 1
    Igt1 5 21 1
    Rgt 21 22 RMOD2 1
    .MODEL MOSMOD1 NMOS VTO=1.3 IS=1E-15 KP=0.46
    .MODEL MOSMOD2 NMOS VTO=.86 IS=1E-15 KP=0.0046
    .MODEL DMOD1 D IS=4.14E-13 RS=.278 N=1.0078 CJO=130E-12
    .MODEL SMOD1a VSWITCH RON=.01 ROFF=1e3  VON=-1.7 VOFF=2.75
    .MODEL SMOD1b VSWITCH RON=.01 ROFF=1e3  VON=2.75 VOFF=-1.7
    .MODEL SMOD2a VSWITCH RON=.01 ROFF=1e3  VON=-1.5 VOFF=-3.5
    .MODEL SMOD2b VSWITCH RON=.01 ROFF=1e3  VON=-3.5 VOFF=-1.5
    .MODEL RMOD1 RES (TC1=8.9e-3 TC2=3e-5)
    .MODEL RMOD2 RES (TC1=-2.5e-3 TC2=3.3e-6)
    .ENDS
    *
    *$
    *


*ZETEX ZVNL110A Spice Model v1.0 Last Revised 19/3/03
    *
    .SUBCKT ZVNL110A 3 4 5
    *               D G S
    M1 21 22 23 23 MNL110a
    M2 21 22 23 23 MNL110b
    RG 4 22 120
    RD 3 21 2
    RS 5 23 1
    RL 3 5 1E9
    C1 22 5 55E-12
    C2 3 22 5E-12
    D1 5 3 DNL110a
    *
    .MODEL MNL110a NMOS VTO=2.1 IS=1E-15 KP=0.2 CBD=60E-12 PB=1 
    +LAMBDA=2.6E-3
    .MODEL MNL110b NMOS VTO=0.95 RS=2 Rd=2 KP=0.05 PB=1 LAMBDA=2.6E-3
    .MODEL DNL110a D IS=1E-12 RS=0.37 BV=105
    .ENDS ZVNL110A
    *
    *$
    *


*ZETEX ZVNL110G Spice Model v1.0 Last Revised 19/3/03
    *
    .SUBCKT ZVNL110G 3 4 5
    *               D G S
    M1 21 22 23 23 MNL110a
    M2 21 22 23 23 MNL110b
    RG 4 22 120
    RD 3 21 2
    RS 5 23 1
    RL 3 5 1E9
    C1 22 5 55E-12
    C2 3 22 5E-12
    D1 5 3 DNL110a
    *
    .MODEL MNL110a NMOS VTO=2.1 IS=1E-15 KP=0.2 CBD=60E-12 PB=1 
    +LAMBDA=2.6E-3
    .MODEL MNL110b NMOS VTO=0.95 RS=2 Rd=2 KP=0.05 PB=1 LAMBDA=2.6E-3
    .MODEL DNL110a D IS=1E-12 RS=0.37 BV=105
    .ENDS ZVNL110G
    *
    *$
    *


*ZETEX ZVNL120A Spice Model v1.0 Last Revised 27/9/04
    *
    .SUBCKT ZVNL120A 3 4 5
    *               D G S
    M1 21 2 23 23 Mmod1
    M2 21 2 23 23 Mmod2
    J1 24 25 21 Jmod
    RJ 25 23 1000
    RG 4 22 90
    RD1 3 24 Rmod1 2
    RD2 21 24 Rmod1 20
    RS 5 23 Rmod1 1
    RL 3 5 1.5E9
    RIN 22 5 2E9
    C1 22 5 85E-12
    C2 3 22 7E-12
    D1 5 3 Dmod
    Igt 5 31 1
    Rgt 31 32 Rmod2 1
    Vgt 5 32 1
    Egt 22 2 5 31 1
    .MODEL Mmod1 NMOS VTO=1.7 IS=1E-15 KP=0.5 CBD=20E-12 PB=1 
    +LAMBDA=2.6E-3
    .MODEL Mmod2 NMOS VTO=0.95 RS=2 Rd=2 KP=0.05 PB=1 LAMBDA=2.6E-3
    .MODEL Jmod NJF  Beta=15m Betatce=-.5 Lambda=50m Vto=-6.25 Vtotc=-2.5m 
    .MODEL Dmod D IS=1E-12 RS=0.5 BV=205
    .MODEL Rmod1 RES (TC1=9e-3 TC2=2.5E-5)
    .MODEL Rmod2 RES (TC1=2.4e-3 TC2=1E-6)
    .ENDS ZVNL120A
    *
    *$
    *


*ZETEX ZVNL120G Spice Model v1.0 Last Revised 27/9/04
    *
    .SUBCKT ZVNL120G 3 4 5
    *               D G S
    M1 21 2 23 23 Mmod1
    M2 21 2 23 23 Mmod2
    J1 24 25 21 Jmod
    RJ 25 23 1000
    RG 4 22 90
    RD1 3 24 Rmod1 2
    RD2 21 24 Rmod1 20
    RS 5 23 Rmod1 1
    RL 3 5 1.5E9
    RIN 22 5 2E9
    C1 22 5 85E-12
    C2 3 22 7E-12
    D1 5 3 Dmod
    Igt 5 31 1
    Rgt 31 32 Rmod2 1
    Vgt 5 32 1
    Egt 22 2 5 31 1
    .MODEL Mmod1 NMOS VTO=1.7 IS=1E-15 KP=0.5 CBD=20E-12 PB=1 
    +LAMBDA=2.6E-3
    .MODEL Mmod2 NMOS VTO=0.95 RS=2 Rd=2 KP=0.05 PB=1 LAMBDA=2.6E-3
    .MODEL Jmod NJF  Beta=15m Betatce=-.5 Lambda=50m Vto=-6.25 Vtotc=-2.5m 
    .MODEL Dmod D IS=1E-12 RS=0.5 BV=205
    .MODEL Rmod1 RES (TC1=9e-3 TC2=2.5E-5)
    .MODEL Rmod2 RES (TC1=2.4e-3 TC2=1E-6)
    .ENDS ZVNL120G
    *
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=16/10/2009
*VERSION=1
*PIN_ORDER         D G S
*
.SUBCKT ZXMN0545G4 3 4 5
M1 6 20 8 8 MOSMOD
M2 6 20 8 8 MOSMODS
RG 4 2 55
RIN 2 8 200E6
RD 3 6 RMOD1 40
RS 8 5 RMOD1 2.5 
RL 3 5 200E6
C1 2 8 160E-12
C2 17 3 2E-12 
D1 5 3 DMOD1
D2 17 3 DMOD2
Egs1 2 17 2 8 1
Egt1 2 20 21 5 1
Vgt1 5 22 1
Igt1 5 21 1
Rgt 21 22 RMOD2 1
.MODEL MOSMOD NMOS VTO=2.26 IS=1E-15 KP=.59 CBD=15E-12 PB=1 LAMBDA=4.9E-3
.MODEL MOSMODS NMOS VTO=1.9 IS=1E-15 KP=0.02 PB=1
.MODEL DMOD1 D IS=2E-13 RS=10 N=1.01 IKF=3E-3
.MODEL DMOD2 D CJO=25E-12 IS=1E-30 N=10
.MODEL RMOD1 RES (TC1=8E-3 TC2=1.7E-5)
.MODEL RMOD2 RES (TC1=-2.5E-3 TC2=3.3E-6)
.ENDS
*
*$


*DIODES_INC_SPICE_MODEL ZXMN10A07F N-channel MOSFET
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=18Dec2014
*VERSION=1



.SUBCKT ZXMN10A07F 10 20 30
M1 1 2 3 3  Nmod1
RD 10 1 Rmod1 400E-3
RS 23 3 Rmod1 200E-3
RG 20 22 2.6
RIN 20 23 2E11
RDS 10 23 6E9
CGS 2 3 105E-12 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 80E-12 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 23 10  DSUB
EL 2 22 1 3 0.0015
LS  30 23 1n
.MODEL Nmod1 NMOS (LEVEL=3 VTO=4.15 TOX=10.7E-8 NSUB=1.2E+17 KP=4.2 NFS=5E+11 IS=1E-15 N=10)
.MODEL DCGD D (CJO = 60E-12  VJ = 0.5  M = 0.43)
.MODEL DSUB D (IS = .02E-10 N=1.1 RS=0.04 BV=105 CJO=33E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=3E-3 IKF=.4)
.MODEL DLIM D (IS=100U N=1)
.MODEL Rmod1 RES (TC1=3e-3 TC2=6E-6)
.ENDS

.SIMULATOR DEFAULT

*                (c)  2014 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*DIODES_INC_SPICE_MODEL ZXMN10A07Z N-channel MOSFET
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=1Jul2014
*VERSION=1



.SUBCKT ZXMN10A07Z 10 20 30
M1 1 2 3 3  Nmod1
RD 10 1 Rmod1 400E-3
RS 23 3 Rmod1 200E-3
RG 20 22 2.6
RIN 20 23 2E11
RDS 10 23 6E9
CGS 2 3 105E-12 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 80E-12 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 23 10  DSUB
EL 2 22 1 3 0.0015
LS  30 23 1n
.MODEL Nmod1 NMOS (LEVEL=3 VTO=4.15 TOX=10.7E-8 NSUB=1.2E+17 KP=4.2 NFS=5E+11 IS=1E-15 N=10)
.MODEL DCGD D (CJO = 60E-12  VJ = 0.5  M = 0.43)
.MODEL DSUB D (IS = .02E-10 N=1.1 RS=0.04 BV=105 CJO=33E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=3E-3 IKF=.4)
.MODEL DLIM D (IS=100U N=1)
.MODEL Rmod1 RES (TC1=3e-3 TC2=6E-6)
.ENDS


*ZETEX  ZXMN10A08DN8 Spice Model v2.0 Last Revised 21/2/05
    *
    .SUBCKT ZXMN10A08DN8 30 40 50
    *------connections-------D-G-S
    M1 6 2 5 5 Nmod L=1E-6 W=0.6
    M2 5 2 5 6 Pmod L=1.5E-6 W=0.45
    RG 4 2 3.2
    RIN 2 5 1E12
    RD 3 6 Rdmod 0.14
    RL 6 5 10E9
    C1 2 5 30E-12
    C2 3 4 10E-12
    D1 5 3  Dbodymod
    LD 3 30 1.5E-9
    LG 4 40 1.2E-9
    LS 5 50 1.2E-9
    .MODEL Nmod NMOS (LEVEL=3 TOX=5E-8 NSUB=2E17 VTO=4.05
    +KP=18E-5 RS=.07 NFS=2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10)
    .MODEL Pmod PMOS (LEVEL=3 TOX=15E-8 NSUB=2E15
    +TPG=-1 IS=1E-15 N=10)
    .MODEL Dbodymod D (IS=2E-12 RS=.02 IKF=0.06 TRS1=1.5e-3
    +CJO=120e-12 BV=101)
    .MODEL Rdmod RES (TC1=9.5e-3 TC2=2.5E-5)
    .ENDS ZXMN10A08DN8
    *
    *$
    *


*ZETEX  ZXMN10A08E6 Spice Model v2.0 Last Revised 21/2/05
    *
    .SUBCKT ZXMN10A08E6 30 40 50
    *------connections-------D-G-S
    M1 6 2 5 5 Nmod L=1E-6 W=0.6
    M2 5 2 5 6 Pmod L=1.5E-6 W=0.45
    RG 4 2 3.2
    RIN 2 5 1E12
    RD 3 6 Rdmod 0.14
    RL 6 5 10E9
    C1 2 5 30E-12
    C2 3 4 10E-12
    D1 5 3  Dbodymod
    LD 3 30 0.3E-9
    LG 4 40 1.9E-9
    LS 5 50 1.9E-9
    .MODEL Nmod NMOS (LEVEL=3 TOX=5E-8 NSUB=2E17 VTO=4.05
    +KP=18E-5 RS=.07 NFS=2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10)
    .MODEL Pmod PMOS (LEVEL=3 TOX=15E-8 NSUB=2E15
    +TPG=-1 IS=1E-15 N=10)
    .MODEL Dbodymod D (IS=2E-12 RS=.02 IKF=0.06 TRS1=1.5e-3
    +CJO=120e-12 BV=101)
    .MODEL Rdmod RES (TC1=9.5e-3 TC2=2.5E-5)
    .ENDS ZXMN10A08E6
    *
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=25/02/09
*VERSION=1
*PIN_ORDER         D G S
*
.SUBCKT ZXMN10A08G 1 2 3
M11 20 21 22 22 Nnmod1 L=1E-6 W=0.6
M12 22 21 22 20 Pnmod1 L=1.5E-6 W=0.45
RG1 21 27 3.2
RIN1 21 22 1E12
RD1 20 24 Rnmod1 0.14
RS1 22 23 1E-6
RL1 23 24 10E9
C11 21 22 65E-12
C12 20 21 10E-12
D1 23 24  Dnmod1
LD1 1 24 1.0E-9
LG1 2 27 2.3E-9
LS1 3 23 2.3E-9
.MODEL Nnmod1 NMOS (LEVEL=3 TOX=5E-8 NSUB=2E17 VTO=4.05
+KP=18E-5 RS=.07 NFS=2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10)
.MODEL Pnmod1 PMOS (LEVEL=3 TOX=15E-8 NSUB=2E15
+TPG=-1 IS=1E-15 N=10)
.MODEL Dnmod1 D (IS=2E-12 RS=.02 IKF=0.06 TRS1=1.5e-3
+CJO=120e-12 BV=110)
.MODEL Rnmod1 RES (TC1=9.5e-3 TC2=2.5E-5)
.ENDS ZXMN10A08G
*
*$


*ZETEX ZXMN10A09K Spice Model v2.0 Last Revised 21/2/05
    *
    .SUBCKT ZXMN10A09K 30 40 50
    *------connections-------D-G-S
    M1 6 2 5 5 Nmod L=1E-6 W=1.7
    M2 5 2 5 6 Pmod L=1.5E-6 W=1.27
    RG 4 2 0.7
    RIN 2 5 1E12
    RD 3 6 Rdmod 0.19
    RL 6 5 10E9
    C1 2 5 85E-12
    C2 3 4 28E-12
    D1 5 3  Dbodymod
    LD 3 30 1.3E-9
    LG 4 40 2.4E-9
    LS 5 50 2.4E-9
    .MODEL Nmod NMOS (LEVEL=3 TOX=5E-8 NSUB=2E17 VTO=3.45
    +KP=2.5E-5 RS=.0053 NFS=2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10)
    .MODEL Pmod PMOS (LEVEL=3 TOX=15E-8 NSUB=2E15
    +TPG=-1 IS=1E-15 N=10)
    .MODEL Dbodymod D (IS=5.6E-12 RS=.016 IKF=0.095 TRS1=1.5e-3
    +CJO=338e-12  BV=101)
    .MODEL Rdmod RES (TC1=7e-3 TC2=2.5E-5)
    .ENDS ZXMN10A09K
    *
    *$
    *


*ZETEX  ZXMN10A11G Spice Model v2.0 Last Revised 11/2/05
    *
    *
    .SUBCKT ZXMN10A11G 30 40 50
    *------connections-------D-G-S
    M1 6 2 5 5 Nmod L=1E-6 W=0.48
    M2 5 2 5 6 Pmod L=1.5E-6 W=0.31
    RG 4 2 2.9
    RIN 2 5 1E12
    RD 3 6 Rdmod 0.28
    RL 6 5 10E9
    C1 2 5 21E-12
    C2 3 4 6.9E-12
    D1 5 3  Dbodymod
    LD 3 30 1E-9
    LG 4 40 2.3E-9
    LS 5 50 2.3E-9
    .MODEL Nmod NMOS (LEVEL=3 TOX=5E-8 NSUB=2E17 VTO=3.22
    +KP=1.42E-5 RS=.023 NFS=2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10)
    .MODEL Pmod PMOS (LEVEL=3 TOX=15E-8 NSUB=2E15  TPG=-1 
    +IS=1E-15 N=10)
    .MODEL Dbodymod D (IS=1.6E-12 RS=0.03 IKF=0.047 TRS1=1.5e-3
    +CJO=83e-12  BV=101)
    .MODEL Rdmod RES (TC1=7e-3 TC2=2.5E-5)
    .ENDS ZXMN10A11G
    *
    *$
    *


*ZETEX ZXMN10A11K Spice Model v2.0 Last Revised 24/10/07
    *
    *
    .SUBCKT ZXMN10A11K 30 40 50
    *------connections-------D-G-S
    M1 6 2 5 5 Nmod L=1E-6 W=0.48
    M2 5 2 5 6 Pmod L=1.5E-6 W=0.31
    RG 4 2 2.9
    RIN 2 5 1E12
    RD 3 6 Rdmod 0.28
    RL 6 5 10E9
    C1 2 5 21E-12
    C2 3 4 6.9E-12
    D1 5 3  Dbodymod
    LD 3 30 1.3E-9
    LG 4 40 2.4E-9
    LS 5 50 2.4E-9
    .MODEL Nmod NMOS (LEVEL=3 TOX=5E-8 NSUB=2E17 VTO=3.22
    +KP=1.42E-5 RS=.023 NFS=2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10)
    .MODEL Pmod PMOS (LEVEL=3 TOX=15E-8 NSUB=2E15  TPG=-1 
    +IS=1E-15 N=10)
    .MODEL Dbodymod D (IS=1.6E-12 RS=0.03 IKF=0.047 TRS1=1.5e-3
    +CJO=83e-12  BV=101)
    .MODEL Rdmod RES (TC1=7e-3 TC2=2.5E-5)
    .ENDS ZXMN10A11K
    *
    *$
    *


*ZETEX ZXMN10A25G Spice Model v1.0 Last Revised 24/10/07
    *
    .SUBCKT ZXMN10A25G 30 40 50
    *------connections-------D-G-S
    M1 6 2 5 5 Nmod L=1E-6 W=1.75
    M2 5 2 5 6 Pmod L=1.5E-6 W=1.3
    RG 4 2 1.5
    RIN 2 5 1E12
    RD 3 6 Rdmod 0.08
    RL 3 5 10E9
    C1 2 5 200E-12
    D1 5 3  Dbodymod
    LD 3 30 1E-9
    LG 4 40 2.3E-9
    LS 5 50 2.3E-9
    .MODEL Nmod NMOS (LEVEL=3 TOX=10E-8 NSUB=1E17 VTO=3.7
    +KP=2E-5 RS=0.01 NFS=7e10  KAPPA=0.06 IS=1E-15 N=10)
    .MODEL Pmod PMOS (LEVEL=3 TOX=10E-8 NSUB=2E15 TPG=-1
    +IS=1E-15 N=10)
    .MODEL Dbodymod D (IS=1E-12 RS=.025 TRS1=1.5e-3
    +CJO=240e-12 VJ=0.6 M=0.54 TT=5e-9 BV=101)
    .MODEL Rdmod RES (TC1=7.5e-3 TC2=2.3E-5)
    .ENDS ZXMN10A25G
    *
    *$
    *


*ZETEX ZXMN10A25K Spice Model v1.0 Last Revised 24/10/07
    *
    .SUBCKT ZXMN10A25K 30 40 50
    *------connections-------D-G-S
    M1 6 2 5 5 Nmod L=1E-6 W=1.75
    M2 5 2 5 6 Pmod L=1.5E-6 W=1.3
    RG 4 2 1.5
    RIN 2 5 1E12
    RD 3 6 Rdmod 0.08
    RL 3 5 10E9
    C1 2 5 200E-12
    D1 5 3  Dbodymod
    LD 3 30 1.3E-9
    LG 4 40 2.4E-9
    LS 5 50 2.4E-9
    .MODEL Nmod NMOS (LEVEL=3 TOX=10E-8 NSUB=1E17 VTO=3.7
    +KP=2E-5 RS=0.01 NFS=7e10  KAPPA=0.06 IS=1E-15 N=10)
    .MODEL Pmod PMOS (LEVEL=3 TOX=10E-8 NSUB=2E15 TPG=-1
    +IS=1E-15 N=10)
    .MODEL Dbodymod D (IS=1E-12 RS=.025 TRS1=1.5e-3
    +CJO=240e-12 VJ=0.6 M=0.54 TT=5e-9 BV=101)
    .MODEL Rdmod RES (TC1=7.5e-3 TC2=2.3E-5)
    .ENDS ZXMN10A25K
    *
    *$
    *


*ZETEX ZXMN10B08E6 Spice Model v2.0 Last Revised 22/2/05
    *
    .SUBCKT ZXMN10B08E6 30 40 50
    *------connections-------D-G-S
    M1 6 2 5 5 Nmod L=1E-6 W=0.75
    M2 5 2 5 6 Pmod L=1.5E-6 W=0.75
    RG 4 2 1
    RIN 2 5 1E12
    RD 3 6 Rdmod 0.19
    RL 3 5 10E9
    C1 2 5 100E-12
    D1 5 3  Dbodymod
    LD 3 30 0.3E-9
    LG 4 40 1.9E-9
    LS 5 50 1.9E-9
    .MODEL Nmod NMOS (LEVEL=3 TOX=8E-8 NSUB=2E17 VTO=3.12
    +KP=2.2E-5 RS=.015 NFS=6E11 KAPPA=0.06 UO=650 IS=1E-15 N=10)
    .MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=1E15 TPG=-1
    +IS=1E-15 N=10)
    .MODEL Dbodymod D (IS=2E-12 RS=.025 IKF=0.06 TRS1=1.5e-3
    +CJO=300e-12 TT=5e-9 BV=101)
    .MODEL Rdmod RES (TC1=7e-3 TC2=2.5E-5)
    .ENDS
    *
    *$
    *


*SRC=BSS123W;DI_BSS123W;MOSFETs N;Enh;100V 0.170A 1.00ohms  Diodes Inc. MOSFET 
.MODEL DI_BSS123W  NMOS( LEVEL=1 VTO=1.40 KP=0.805  GAMMA=1.74
+ PHI=.75  LAMBDA=41.8u RD=0.140 RS=0.140
+ IS=85.0f  PB=0.800 MJ=0.460 CBD=39.5p 
+ CBS=47.4p  CGSO=24.0n CGDO=20.0n CGBO=246n  )   *   -- Assumes default L=100U W=100U --


*ZETEX  BSS123 Spice Model v1.0 Last Revision 27/3/06
    *
    .SUBCKT BSS123/ZTX 3 4 5
    * NODES: DRAIN GATE SOURCE
    M1 3 2 5 5 MOD1   
    RG 4 2 356
    RL 3 5 1E8
    C1 2 5 21.5P
    C2 3 2 2.5P 
    D1 5 3 DIODE1
    *
    .MODEL MOD1 NMOS VTO=1.736 RS=2.147 RD=1.682 IS=1E-15 KP=0.157
    +CBD=25.5P PB=1
    .MODEL DIODE1 D IS=6.12E-13 RS=.629
    .ENDS BSS123
    *
    *$
    *


*DIODES_INC_SPICE_MODEL ZXMN20B28K
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=23Apr2014
*VERSION=1
*PINS 10=D 20=G 30=S


.SUBCKT  ZXMN20B28K 10 20 30 
M1 1 2 3 3  Nmod1
RD 10 1 Rmod1 530E-3
RS 23 3 Rmod1 120E-3
RG 20 22 20
RIN 20 23 2E11
RDS 10 23 6E9
CGS 2 3 450E-12 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 800E-12 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 23 10  DSUB
EL 2 22 1 3 0.00001
LS  30 23  3n
.MODEL Nmod1 NMOS (LEVEL=3 VTO=2.2 TOX=5E-8 NSUB=1E+15 KP=150 NFS=15E+11 IS=1E-15 N=10)
.MODEL DCGD D (CJO = 130E-12  VJ = 0.5  M = 0.43 T_ABS=25)
.MODEL DSUB D (IS = 1.5E-12 N=1 RS=0.01 BV=210 IKF=.12 CJO=350E-12 VJ=0.42 M=0.5 TT=130E-9 TRS1=1.2E-3)
.MODEL DLIM D (IS=100U N=1 T_ABS=25)
.MODEL Rmod1 RES (TC1=1.2e-3 TC2=8E-6)
.ENDS



*                     (c)  2014 Diodes Inc
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*DIODES_INC_SPICE_MODEL ZXMN15A25K
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=20Dec2011
*VERSION=1
*PINS 10=D 20=G 30=S

.SUBCKT zxmn15a27k 10 20 30 
M1 1 2 3 3  Nmod1
RD 10 1 Rmod1 300E-3
RS 23 3 Rmod1 180E-3
RG 20 22 2
RIN 20 23 2E11
RDS 10 23 6E9
CGS 2 3 150E-12 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 240E-12 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 23 10  DSUB
EL 2 22 1 3 0.001
LS  30 23  3n
.MODEL Nmod1 NMOS (LEVEL=3 VTO=3.2 TOX=20E-8 NSUB=2.8E+15 KP=9.5 NFS=1E+11 IS=1E-15 N=10)
.MODEL DCGD D (CJO = 140E-12  VJ = 0.5  M = 0.43 T_ABS=25)
.MODEL DSUB D (IS = 1.85E-12 N=1.085 RS=0.022 BV=155 CJO=330E-12 VJ=0.42 M=0.5 TT=150E-9 TRS1=2.6E-3)
.MODEL DLIM D (IS=100U N=1 T_ABS=25)
.MODEL Rmod1 RES (TC1=8e-3 TC2=8E-6)
.ENDS

.SIMULATOR DEFAULT


*---------- BSS127SSN Spice Model ----------
.SUBCKT BSS127SSN 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 84.22 
RS 30 3 0.001 
RG 20 2 29 
CGS 2 3 1.958E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 7.5E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 1E-012 VTO = 3.419 
+ TOX = 6.8E-008 NSUB = 1E+016 KP = 0.127 U0 = 400 KAPPA = 1.044E-015 
.MODEL DCGD D CJO = 1.137E-011 VJ = 0.9051 M = 0.89 
.MODEL DSUB D IS = 2.294E-010 N = 1.601 RS = 0.1079 BV = 690 
+ CJO = 1.956E-011 VJ = 1.514 M = 0.8171 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes BSS127SSN Spice Model v1.1 Last Revised 2014/8/5


*---------- BSS127S Spice Model ----------
.SUBCKT BSS127S 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 84.22 
RS 30 3 0.001 
RG 20 2 29 
CGS 2 3 1.958E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 7.5E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 1E-012 VTO = 3.419 
+ TOX = 6.8E-008 NSUB = 1E+016 KP = 0.127 U0 = 400 KAPPA = 1.044E-015 
.MODEL DCGD D CJO = 1.137E-011 VJ = 0.9051 M = 0.89 
.MODEL DSUB D IS = 2.294E-010 N = 1.601 RS = 0.1079 
+ BV = 690 CJO = 1.956E-011 VJ = 1.514 M = 0.8171 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes BSS127S Spice Model v1.1 Last Revised 2014/8/5



*---------- DMG4N65CT Spice Model ----------
.SUBCKT DMG4N65CT 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 1.901 
RS 30 3 0.001 
RG 20 2 2.4 
CGS 2 3 8.859E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 7.5E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 1E-012 VTO = 4.347 
+ TOX = 6E-008 NSUB = 1E+016 KP = 4.509 U0 = 400 KAPPA = 13.05 
.MODEL DCGD D CJO = 3.337E-010 VJ = 0.6 M = 0.9816 
.MODEL DSUB D IS = 2.232E-010 N = 1.338 RS = 0.002184 
+ BV = 700 CJO = 1.208E-009 VJ = 0.4984 M = 0.83 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMG4N65CT Spice Model v1.0 Last Revised 2014/5/9



*---------- DMN10H120SFG Spice Model ----------
.SUBCKT DMN10H120SFG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.05782 
RS 30 3 0.001 
RG 20 2 1.86 
CGS 2 3 5.654E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 3.75E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8E+005  ETA = 0.001  VTO = 3.378 
+ TOX = 6E-008  NSUB = 1E+016  KP = 20  U0 = 400  KAPPA = 1 
.MODEL DCGD D  CJO = 2.382E-010  VJ = 0.7  M = 0.7 
.MODEL DSUB D  IS = 9.862E-009  N = 1.554  RS = 4.441E-010  BV = 125  CJO = 4.436E-010  VJ = 0.7  M = 0.7033 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN10H120SFG Spice Model v1.0 Last Revised 2014/12/09


*---------- DMN30H4D0LFDE Spice Model ----------
.SUBCKT DMN30H4D0LFDE 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 2.239 
RS 30 3 0.001 
RG 20 2 1.53 
CGS 2 3 2E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 3.9E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.514 
+ TOX = 6E-008 NSUB = 1E+016 KP = 3.1 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.204E-010 VJ = 0.1 M = 0.5744 
.MODEL DSUB D IS = 5.479E-008 N = 1.755 RS = 0.04325 BV = 334 CJO = 1.2E-010 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN30H4D0LFDE Spice Model v1.0M Last Revised 2016/6/16


*---------- DMN24H3D5L Spice Model ----------
.SUBCKT DMN24H3D5L 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 1.5 
RS 30 3 0.001 
RG 20 2 3.86 
CGS 2 3 2.2E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 3.5E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.384 
+ TOX = 6E-008 NSUB = 1E+016 KP = 3.501 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.657E-010 VJ = 0.6 M = 0.7947 
.MODEL DSUB D IS = 7.117E-010 N = 1.369 RS = 0.04982 BV = 280 CJO = 1E-015 VJ = 0.6 M = 0.8 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN24H3D5L Spice Model v1.0M Last Revised 2016/3/14


*---------- DMN10H170SVTQ Spice Model ----------
.SUBCKT DMN10H170SVTQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.1083 
RS 30 3 1E-008 
RG 20 2 1.37 
CGS 2 3 1.07E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 3.5E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.715 
+ TOX = 6E-008 NSUB = 1E+016 KP = 20.25 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 2.221E-010 VJ = 0.1 M = 0.4408 
.MODEL DSUB D IS = 2.405E-010 N = 1.267 RS = 0.006864 BV = 116 CJO = 2.222E-010 VJ = 0.1225 M = 0.5115 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN10H170SVTQ  Spice Model v1.0 Last Revised 2015/9/30



*---------- DMNH10H028SK3Q Spice Model ----------
.SUBCKT DMNH10H028SK3Q 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.02115 
RS 30 3 1E-008 
RG 20 2 1.82 
CGS 2 3 2.134E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 8E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.675 
+ TOX = 6E-008 NSUB = 1E+016 KP = 72.57 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 4.731E-010 VJ = 1 M = 0.9082 
.MODEL DSUB D IS = 2.476E-010 N = 1.172 RS = 0.003739 BV = 119 CJO = 2.226E-009 VJ = 1 M = 0.9133 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMNH10H028SK3Q  Spice Model v1.0 Last Revised 2015/9/07



*---------- DMT10H015LFG Spice Model ----------
.SUBCKT DMT10H015LFG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.0122 
RS 30 3 1E-008 
RG 20 2 0.75 
CGS 2 3 2.015E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.1E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.947 
+ TOX = 6E-008 NSUB = 1E+016 KP = 128.2 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 4.441E-010 VJ = 0.6602 M = 0.8033 
.MODEL DSUB D IS = 2.272E-010 N = 1.181 RS = 0.001826 BV = 105 CJO = 1.15E-009 VJ = 1 M = 0.256 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT10H015LFG  Spice Model v1.0 Last Revised 2015/9/14



*---------- DMT10H015LPS Spice Model ----------
.SUBCKT DMT10H015LPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.0122 
RS 30 3 1E-008 
RG 20 2 0.75 
CGS 2 3 2.015E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.1E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.947 
+ TOX = 6E-008 NSUB = 1E+016 KP = 128.2 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 4.441E-010 VJ = 0.6602 M = 0.8033 
.MODEL DSUB D IS = 2.272E-010 N = 1.181 RS = 0.001826 BV = 105 CJO = 1.15E-009 VJ = 1 M = 0.256 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT10H015LPS  Spice Model v1.0 Last Revised 2015/9/14


*---------- DMJ70H1D3SI3 Spice Model ----------
.SUBCKT DMJ70H1D3SI3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.9496 
RS 30 3 0.001 
RG 20 2 3.52 
CGS 2 3 3.31E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.8E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.304 
+ TOX = 6E-008 NSUB = 1E+016 KP = 2.467 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 4.213E-010 VJ = 0.8 M = 0.607 
.MODEL DSUB D IS = 3.838E-010 N = 1.374 RS = 0.01098 BV = 700 CJO = 1.766E-009 VJ = 0.8 M = 0.6121 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMJ70H1D3SI3 Spice Model v1.0 Last Revised 2015/9/14


*---------- DMNH10H028SPSQ Spice Model ----------
.SUBCKT DMNH10H028SPSQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.02115 
RS 30 3 1E-008 
RG 20 2 1.82 
CGS 2 3 2.134E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 8E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.675 
+ TOX = 6E-008 NSUB = 1E+016 KP = 72.57 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 4.731E-010 VJ = 1 M = 0.9082 
.MODEL DSUB D IS = 2.476E-010 N = 1.172 RS = 0.003739 BV = 119 CJO = 2.226E-009 VJ = 1 M = 0.9133 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMNH10H028SPSQ  Spice Model v1.0 Last Revised 2015/9/07


*---------- DMG4N60SK3 Spice Model ----------
.SUBCKT DMG4N60SK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 1.712 
RS 30 3 0.001 
RG 20 2 3.34 
CGS 2 3 5.257E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 6.5E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.767 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.6613 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 3.457E-010 VJ = 0.6971 M = 0.8 
.MODEL DSUB D IS = 2.293E-010 N = 1.33 RS = 0.005872 BV = 600 CJO = 7.577E-010 VJ = 0.7116 M = 0.8 TT=2.3E-007
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMG4N60SK3 Spice Model v1.0 Last Revised 2015/11/10


*---------- DMJ70H1D3SJ3 Spice Model ----------
.SUBCKT DMJ70H1D3SJ3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.9496 
RS 30 3 0.001 
RG 20 2 3.52 
CGS 2 3 3.31E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.8E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.304 
+ TOX = 6E-008 NSUB = 1E+016 KP = 2.467 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 4.213E-010 VJ = 0.8 M = 0.607 
.MODEL DSUB D IS = 3.838E-010 N = 1.374 RS = 0.01098 BV = 700 CJO = 1.766E-009 VJ = 0.8 M = 0.6121 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMJ70H1D3SJ3 Spice Model v1.0 Last Revised 2015/9/14


*---------- DMN15H310SK3 Spice Model ----------
.SUBCKT DMN15H310SK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.1731 
RS 30 3 0.001 
RG 20 2 0.98 
CGS 2 3 3.848E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 3.1E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.651 
+ TOX = 6E-008 NSUB = 1E+016 KP = 11.81 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.862E-010 VJ = 0.6 M = 0.6 
.MODEL DSUB D IS = 3.094E-010 N = 1.262 RS = 0.01335 BV = 170 CJO = 2.22E-010 VJ = 0.6 M = 0.6149 TT=3.8E-08
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN15H310SK3 Spice Model v1.0 Last Revised 2016/1/15


*---------- DMJ70H1D3SH3 Spice Model ----------
.SUBCKT DMJ70H1D3SH3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.9496 
RS 30 3 0.001 
RG 20 2 3.52 
CGS 2 3 3.31E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.8E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.304 
+ TOX = 6E-008 NSUB = 1E+016 KP = 2.467 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 4.213E-010 VJ = 0.8 M = 0.607 
.MODEL DSUB D IS = 3.838E-010 N = 1.374 RS = 0.01098 BV = 700 CJO = 1.766E-009 VJ = 0.8 M = 0.6121 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMJ70H1D3SH3 Spice Model v1.0 Last Revised 2015/9/14


*---------- DMT10H015LSS Spice Model ----------
.SUBCKT DMT10H015LSS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.0122 
RS 30 3 1E-008 
RG 20 2 0.75 
CGS 2 3 2.015E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.1E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.947 
+ TOX = 6E-008 NSUB = 1E+016 KP = 128.2 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 4.441E-010 VJ = 0.6602 M = 0.8033 
.MODEL DSUB D IS = 2.272E-010 N = 1.181 RS = 0.001826 BV = 105 CJO = 1.15E-009 VJ = 1 M = 0.256 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT10H015LSS  Spice Model v1.0 Last Revised 2015/9/14



*---------- DMT10H010LPS Spice Model ----------
.SUBCKT DMT10H010LPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.005481 
RS 30 3 1E-006 
RG 20 2 0.99 
CGS 2 3 3.582E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.77E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.748 
+ TOX = 6E-008 NSUB = 1E+016 KP = 100.6 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 7.459E-010 VJ = 1 M = 0.5389 
.MODEL DSUB D IS = 2.258E-010 N = 1.188 RS = 0.002508 BV = 114 CJO = 1.914E-009 VJ = 1 M = 0.2026 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT10H010LPS  Spice Model v1.0 Last Revised 2015/7/15


*---------- DMT10H010LPS Spice Model ----------
.SUBCKT DMT10H010LPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.005481 
RS 30 3 1E-006 
RG 20 2 0.99 
CGS 2 3 3.582E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.77E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.748 
+ TOX = 6E-008 NSUB = 1E+016 KP = 100.6 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 7.459E-010 VJ = 1 M = 0.5389 
.MODEL DSUB D IS = 2.258E-010 N = 1.188 RS = 0.002508 BV = 114 CJO = 1.914E-009 VJ = 1 M = 0.2026 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT10H010LPS  Spice Model v1.0 Last Revised 2015/7/15



*---------- DMT10H010LCT Spice Model ----------
.SUBCKT DMT10H010LCT 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.005481 
RS 30 3 1E-006 
RG 20 2 0.99 
CGS 2 3 3.582E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.77E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.748 
+ TOX = 6E-008 NSUB = 1E+016 KP = 100.6 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 7.459E-010 VJ = 1 M = 0.5389 
.MODEL DSUB D IS = 2.258E-010 N = 1.188 RS = 0.002508 BV = 114 CJO = 1.914E-009 VJ = 1 M = 0.2026 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT10H010LCT  Spice Model v1.0 Last Revised 2015/10/13


*
*Zetex BS170P Spice Model v1.1 Last Revised 3/5/00
*
.SUBCKT BS170P 3 4 5
*             D G S
M1 3 2 5 5 N3306M
RG 4 2 270
RL 3 5 1.2E8
C1 2 5 28E-12
C2 3 2 3E-12 
D1 5 3 N3306D
*
.MODEL N3306M NMOS VTO=1.824 RS=1.572 RD=1.436 IS=1E-15 KP=.1233
+CBD=35E-12 PB=1
.MODEL N3306D D IS=5E-12 RS=.768
.ENDS BS170P


*---------- DMNH10H028SCT Spice Model ----------
.SUBCKT DMNH10H028SCT 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01799 
RS 30 3 0.001 
RG 20 2 1.8 
CGS 2 3 2.196E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 8E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.538 
+ TOX = 6E-008 NSUB = 1E+016 KP = 51.62 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 2.277E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.515E-010 N = 1.179 RS = 0.001664 BV = 119 CJO = 1.202E-009 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMNH10H028SCT Spice Model v1.0M Last Revised 2016/4/19


*---------- DMN10H700S Spice Model ----------
.SUBCKT DMN10H700S 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.5307 
RS 30 3 0.001 
RG 20 2 1.89 
CGS 2 3 2.39E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.95E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.374 
+ TOX = 6E-008 NSUB = 1E+016 KP = 2.893 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 4.347E-011 VJ = 0.7808 M = 0.6 
.MODEL DSUB D IS = 2.258E-010 N = 1.404 RS = 0.02857 BV = 117 CJO = 1E-015 VJ = 0.6 M = 0.6149 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN10H700S Spice Model v1.0M Last Revised 2016/4/19


*---------- DMTH10H010LCT Spice Model ----------
.SUBCKT DMTH10H010LCT 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.003569 
RS 30 3 0.001 
RG 20 2 1.2 
CGS 2 3 3.092E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.1E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.685 
+ TOX = 6E-008 NSUB = 1E+016 KP = 53.29 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 3.5E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.273E-010 N = 1.184 RS = 0.0002213 BV = 103 CJO = 2E-009 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH10H010LCT Spice Model v1.0M Last Revised 2016/3/16


*---------- DMG4N60SCT Spice Model ----------
.SUBCKT DMG4N60SCT 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 1 
RS 30 3 0.001 
RG 20 2 3.09 
CGS 2 3 5.393E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 4.5E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.626 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.4508 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 2.385E-010 VJ = 0.6 M = 0.8 
.MODEL DSUB D IS = 2.344E-010 N = 1.337 RS = 0.005462 BV = 660 CJO = 6.251E-010 VJ = 0.6 M = 0.692 TT=1.2E-07
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMG4N60SCT Spice Model v1.0M Last Revised 2016/5/5


*---------- DMG4N60SJ3 Spice Model ----------
.SUBCKT DMG4N60SJ3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 1 
RS 30 3 0.001 
RG 20 2 3.09 
CGS 2 3 5.393E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 4.5E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.626 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.4508 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 2.385E-010 VJ = 0.6 M = 0.8 
.MODEL DSUB D IS = 2.344E-010 N = 1.337 RS = 0.005462 BV = 660 CJO = 6.251E-010 VJ = 0.6 M = 0.692 TT=1.2E-07
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMG4N60SJ3 Spice Model v1.0M Last Revised 2016/5/5


*---------- DMT10H014LSS Spice Model ----------
.SUBCKT DMT10H014LSS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.0122 
RS 30 3 1E-008 
RG 20 2 0.75 
CGS 2 3 2.015E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.1E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.947 
+ TOX = 6E-008 NSUB = 1E+016 KP = 128.2 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 4.441E-010 VJ = 0.6602 M = 0.8033 
.MODEL DSUB D IS = 2.272E-010 N = 1.181 RS = 0.001826 BV = 105 CJO = 1.15E-009 VJ = 1 M = 0.256 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT10H014LSS  Spice Model v1.0M Last Revised 2016/5/4


*---------- DMTH10H015LK3 Spice Model ----------
.SUBCKT DMTH10H015LK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.0122 
RS 30 3 1E-008 
RG 20 2 0.75 
CGS 2 3 2.015E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.1E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.947 
+ TOX = 6E-008 NSUB = 1E+016 KP = 128.2 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 4.441E-010 VJ = 0.6602 M = 0.8033 
.MODEL DSUB D IS = 2.272E-010 N = 1.181 RS = 0.001826 BV = 105 CJO = 1.15E-009 VJ = 1 M = 0.256 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH10H015LK3  Spice Model v1.0M Last Revised 2016/6/13



*---------- DMTH10H030LK3 Spice Model ----------
.SUBCKT DMTH10H030LK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.0122 
RS 30 3 1E-008 
RG 20 2 0.75 
CGS 2 3 2.015E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.1E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.947 
+ TOX = 6E-008 NSUB = 1E+016 KP = 128.2 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 4.441E-010 VJ = 0.6602 M = 0.8033 
.MODEL DSUB D IS = 2.272E-010 N = 1.181 RS = 0.001826 BV = 105 CJO = 1.15E-009 VJ = 1 M = 0.256 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH10H030LK3  Spice Model v1.0M Last Revised 2016/6/13



*---------- DMT10H015LCG Spice Model ----------
.SUBCKT DMT10H015LCG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.0122 
RS 30 3 1E-008 
RG 20 2 0.75 
CGS 2 3 2.015E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.1E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.947 
+ TOX = 6E-008 NSUB = 1E+016 KP = 128.2 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 4.441E-010 VJ = 0.6602 M = 0.8033 
.MODEL DSUB D IS = 2.272E-010 N = 1.181 RS = 0.001826 BV = 105 CJO = 1.15E-009 VJ = 1 M = 0.256 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT10H015LCG  Spice Model v1.0M Last Revised 2015/6/13


*---------- DMTH10H015LPS Spice Model ----------
.SUBCKT DMTH10H015LPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.0122 
RS 30 3 1E-008 
RG 20 2 0.75 
CGS 2 3 2.015E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.1E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.947 
+ TOX = 6E-008 NSUB = 1E+016 KP = 128.2 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 4.441E-010 VJ = 0.6602 M = 0.8033 
.MODEL DSUB D IS = 2.272E-010 N = 1.181 RS = 0.001826 BV = 105 CJO = 1.15E-009 VJ = 1 M = 0.256 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH10H015LPS  Spice Model v1.0M Last Revised 2016/6/13


*---------- DMT10H015LK3 Spice Model ----------
.SUBCKT DMT10H015LK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.0122 
RS 30 3 1E-008 
RG 20 2 0.75 
CGS 2 3 2.015E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.1E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.947 
+ TOX = 6E-008 NSUB = 1E+016 KP = 128.2 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 4.441E-010 VJ = 0.6602 M = 0.8033 
.MODEL DSUB D IS = 2.272E-010 N = 1.181 RS = 0.001826 BV = 105 CJO = 1.15E-009 VJ = 1 M = 0.256 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT10H015LK3  Spice Model v1.0M Last Revised 2016/6/13


*---------- DMN10H220LQ Spice Model ----------
.SUBCKT DMN10H220LQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.1185 
RS 30 3 0.001 
RG 20 2 2.05 
CGS 2 3 3.939E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 3.2E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.875 
+ TOX = 6E-008 NSUB = 1E+016 KP = 7.549 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.543E-010 VJ = 0.6 M = 0.6016 
.MODEL DSUB D IS = 2.244E-010 N = 1.289 RS = 0.02506 BV = 105 CJO = 8E-011 VJ = 0.7087 M = 0.6107 TT = 8.5E-009 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN10H220LQ Spice Model v1.0M Last Revised 2016/8/19


*---------- DMN90H8D5HCT Spice Model ----------
.SUBCKT DMN90H8D5HCT 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 4.929 
RS 30 3 0.001 
RG 20 2 1.16 
CGS 2 3 4.818E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.3E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 4.431 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.4278 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 2.517E-011 VJ = 0.1357 M = 0.7414 
.MODEL DSUB D IS = 2.318E-010 N = 1.372 RS = 0.01261 BV = 1054 CJO = 7.723E-010 VJ = 0.3635 M = 0.6859 TT = 1.87E-007 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN90H8D5HCT Spice Model v1.0M Last Revised 2016/8/3


*---------- DMN90H2D2HCT Spice Model ----------
.SUBCKT DMN90H2D2HCT 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 1.542 
RS 30 3 0.001 
RG 20 2 4.86 
CGS 2 3 1.465E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 6E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 4.498 
+ TOX = 6E-008 NSUB = 1E+016 KP = 2.06 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.49E-012 VJ = 2.391 M = 0.12 
.MODEL DSUB D IS = 2.503E-010 N = 1.303 RS = 0.005901 BV = 1054 CJO = 2.001E-009 VJ = 0.1005 M = 0.5169 TT=3E-07
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN90H2D2HCT Spice Model v1.0M Last Revised 2016/8/3


*---------- DMN95H8D5HCT Spice Model ----------
.SUBCKT DMN95H8D5HCT 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 4.929 
RS 30 3 0.001 
RG 20 2 1.16 
CGS 2 3 4.818E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.3E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 4.431 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.4278 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 2.517E-011 VJ = 0.1357 M = 0.7414 
.MODEL DSUB D IS = 2.318E-010 N = 1.372 RS = 0.01261 BV = 1054 CJO = 7.723E-010 VJ = 0.3635 M = 0.6859 TT = 1.87E-007 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN95H8D5HCT Spice Model v1.0M Last Revised 2016/8/3


*---------- DMT10H010LK3 Spice Model ----------
.SUBCKT DMT10H010LK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.003569 
RS 30 3 0.001 
RG 20 2 1.2 
CGS 2 3 3.092E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.1E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.685 
+ TOX = 6E-008 NSUB = 1E+016 KP = 53.29 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 3.5E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.273E-010 N = 1.184 RS = 0.0002213 BV = 103 CJO = 2E-009 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT10H010LK3 Spice Model v1.0M Last Revised 2016/9/5


*---------- DMJ70H900HJ3 Spice Model ----------
.SUBCKT DMJ70H900HJ3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.406 
RS 30 3 0.001 
RG 20 2 3.63 
CGS 2 3 4.621E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.25E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.701 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.7411 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 6.856E-010 VJ = 0.4981 M = 0.9056 
.MODEL DSUB D IS = 2.234E-010 N = 1.323 RS = 0.006451 BV = 812 CJO = 1.769E-009 VJ = 0.9 M = 0.8991 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMJ70H900HJ3 Spice Model v1.0M Last Revised 2016/6/20



*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=02JUN2010
*VERSION=1
*PIN_ORDER         Sn1, Gn1, Sn2, Gn2, Dn2, Dn2, Dn1, Dn1
*
.SUBCKT ZXMD63C03X 1 2 3 4 5 6 7 8
*Device1
M11 13 12 11 11 Mmod11
M12 13 12 11 11 Mmod12
R11 12 2 5
R12 12 11 2E9
R13 13 14 Rmod11 0.065
R14 11 15 Rmod11 0.012
R15 14 15 300E6
C11 12 11 269E-12
C12 12 14 33E-12 
C13 16 17 300E-12
C14 18 11 365E-12
D11 15 14 Dmod11
S11 12 17 13 12 Smod11
S12 17 19 13 12 Smod12
S13 19 18 12 11 Smod13
S14 18 12 12 11 Smod14
E11 19 11 12 11 1
E12 16 11 14 11 1
L11 15 1 1E-9
L12 14 20 1E-9
R16 20 7 1E-3
R17 20 8 1E-3
* Device2
M21 23 22 21 21 Mmod21
R21 22 4 18
R22 23 21 300E6
R25 21 22 2E9
C21 22 21 450E-12
C22 23 22 35E-12
D21 23 21 Dmod21
L21 21 3 1E-9
L22 23 24 1E-9
R23 24 5 1E-3
R24 24 6 1E-3
*
.MODEL Mmod11 NMOS VTO=2.2 IS=1E-15 KP=5 CBD=170E-12 LAMBDA=4.9E-3
.MODEL Mmod12 NMOS VTO=1.8 IS=1E-15 KP=0.033
.MODEL Dmod11 D IS=2E-13 RS=0.075 BV=38 IBV=1E-6 TT=21e-9
.MODEL Smod11 VSWITCH RON=1e-2 ROFF=1e4  VON=-1.5 VOFF=1.5
.MODEL Smod12 VSWITCH RON=1e-2 ROFF=1e4  VON=1.5 VOFF=-1.5
.MODEL Smod13 VSWITCH RON=1e-2 ROFF=1e4  VON=-1.5 VOFF=-3.5
.MODEL Smod14 VSWITCH RON=1e-2 ROFF=1e4  VON=-3.5 VOFF=-1.5
.MODEL Rmod11 RES (TC1=3E-3 TC2=2E-5)
.MODEL Mmod21 PMOS VTO=-2.32 RS=0.09 RD=0.045 KP=4.2
+CBD=480E-12 LAMBDA=4.9E-3
.MODEL Dmod21 D IS=4E-13 N=1.04 IKF=295E-3 RS=94E-3
.ENDS
*
*$


*---------- DMC3021LSD Spice Model ----------

*NMOS
.SUBCKT DMC3021LSD_N 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.005805 
RS 30 3 0.001 
RG 20 2 1.32 
CGS 2 3 6.922E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 9.2E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0.0143  VTO = 2.028 
+ TOX = 6E-008  NSUB = 1E+017  KP = 21.95  KAPPA = 105  U0 = 200 
.MODEL DCGD D  CJO = 4.611E-010  VJ = 0.3568  M = 0.4267 
.MODEL DSUB D  IS = 2.567E-010  N = 1.254  RS = 0.01257  BV = 35  CJO = 8.267E-011  VJ = 0.4558  M = 0.5515 
.MODEL DLIM D  IS = 0.0001 
.ENDS


*PMOS
.SUBCKT DMC3021LSD_P 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.02496 
RS 30 3 0.001 
RG 20 2 11.1 
CGS 2 3 8.938E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 8.92E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 2.425E+005 KP = 27.53 ETA = 0.0001 
+ TOX = 6E-008 NSUB = 1E+017 KAPPA = 2.932 VTO = -1.9 
.MODEL DCGD D CJO = 4.013E-010 VJ = 0.3844 M = 0.3457 
.MODEL DSUB D IS = 2.245E-010 N = 1.343 RS = 0.01819 
+ BV = 35 CJO = 7.964E-011 VJ = 3.068 M = 0.9583 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMC3021LSD Spice Model v2.0 Last Revised 2012/8/6


*---------- DMC3032LSD Spice Model ----------

*NMOS

.SUBCKT DMC3032LSD_NMOS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01735 
RS 30 3 0.001 
RG 20 2 1.51 
CGS 2 3 3.898E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 4.95E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 1.5 
+ TOX = 6E-008 NSUB = 1E+017 KP = 16.9 KAPPA = 9.834 U0 = 400 
.MODEL DCGD D CJO = 2.661E-010 VJ = 0.2369  M = 0.408 
.MODEL DSUB D IS = 1.445E-010 N = 1.257 RS = 0.01296 BV = 35 
+ CJO = 4.795E-011 VJ = 0.3436 M = 0.5232 
.MODEL DLIM D IS = 0.0001 
.ENDS


*PMOS

.SUBCKT DMC3032LSD_PMOS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.02496 
RS 30 3 0.001 
RG 20 2 11.1 
CGS 2 3 8.938E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 8.92E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 2.425E+005 KP = 27.53 ETA = 0.0001 
+ TOX = 6E-008 NSUB = 1E+017 KAPPA = 2.932 VTO = -1.9 
.MODEL DCGD D CJO = 4.013E-010 VJ = 0.3844 M = 0.3457 
.MODEL DSUB D IS = 2.245E-010 N = 1.343 RS = 0.01819 
+ BV = 35 CJO = 7.964E-011 VJ = 3.068 M = 0.9583 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMC3032LSD Spice Model v2.0 Last Revised 2012/8/06


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=24JAN2011
*VERSION=1
*PIN_ORDER         
*1=S1
*2=G1
*3=S2
*4=G2
*5=D2
*6=D2
*7=D1
*8=D1
*
.SUBCKT ZXMC3AMC 1 2 3 4 5 6 7 8
*Dev1 N-channel
M11 11 12 13 13 Nmod1 L=1.16E-6 W=0.28
M12 13 12 13 11 Pmod1 L=1.3E-6 W=0.13
RG11 2 12 5
RIN11 12 13 1E12
RD11 11 15 Rmod1 0.08
RS11 13 14 1E-6
RL11 13 15 3E9
C11 12 13 8.5E-12
C12 12 15 3E-12
D11 13 15  Dmod1
RP11 15 7 1E-6
RP12 15 8 1E-6
LS11 14 1 11.2E-9
.MODEL Nmod1 NMOS (LEVEL=3 TOX=5.5E-8 NSUB=5E17 VTO=2.3
+KP=15E-5 RS=.045 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10)
.MODEL Pmod1 PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1.5E16
+TPG=-1 IS=1E-15 N=10)
.MODEL Dmod1 D (IS=6E-13 RS=.025 IKF=0.1 TRS1=1.5e-3
+CJO=85e-12  BV=33)
.MODEL Rmod1 RES (TC1=4.2e-3 TC2=1E-5)
*Dev2 P-channel
M21 21 22 23 23 Pmod2 L=1.2E-6 W=0.33
M22 23 22 23 21 Nmod2 L=1.4E-6 W=0.19
RG21 4 22 10
RIN21 22 23 1E9
RD21 21 25 Rmod2 0.05
RS21 23 24 1E-6
RL21 23 25 3E9
C21 22 23 8.5E-12
C22 22 25 5E-12
D21 25 23  Dmod2
RP21 25 5 1E-6
RP22 25 6 1E-6
LS21 24 3 1.2E-9
.MODEL Pmod2 PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E17 
+VTO=-1.9 KP=2E-5 RS=.05 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10)
.MODEL Nmod2 NMOS (LEVEL=3 TOX=5.5E-8 NSUB=2E16 
+TPG=-1 IS=1E-15 N=10)
.MODEL Dmod2 D (IS=6E-13 RS=.025 IKF=0.1 TRS1=1.5e-3
+CJO=65e-12  BV=33)
.MODEL Rmod2 RES (TC1=5.5e-3 TC2=1.5E-5)
.ENDS
*
*$


*---------- DMC3021LK4 Spice Model ----------

*NMOS
.SUBCKT DMC3021LK4_N 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.005805 
RS 30 3 0.001 
RG 20 2 1.32 
CGS 2 3 6.922E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 9.2E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0.0143  VTO = 2.028 
+ TOX = 6E-008  NSUB = 1E+017  KP = 21.95  KAPPA = 105  U0 = 200 
.MODEL DCGD D  CJO = 4.611E-010  VJ = 0.3568  M = 0.4267 
.MODEL DSUB D  IS = 2.567E-010  N = 1.254  RS = 0.01257  BV = 35  CJO = 8.267E-011  VJ = 0.4558  M = 0.5515 
.MODEL DLIM D  IS = 0.0001 
.ENDS


*PMOS
.SUBCKT DMC3021LK4_P 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.02496 
RS 30 3 0.001 
RG 20 2 11.1 
CGS 2 3 8.938E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 8.92E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 2.425E+005 KP = 27.53 ETA = 0.0001 
+ TOX = 6E-008 NSUB = 1E+017 KAPPA = 2.932 VTO = -1.9 
.MODEL DCGD D CJO = 4.013E-010 VJ = 0.3844 M = 0.3457 
.MODEL DSUB D IS = 2.245E-010 N = 1.343 RS = 0.01819 
+ BV = 35 CJO = 7.964E-011 VJ = 3.068 M = 0.9583 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMC3021LK4 Spice Model v2.0 Last Revised 2012/8/6


*---------- DMG6602SVT Spice Model ----------

*NMOS
.SUBCKT DMG6602SVT_N 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.01593 
RS 30 3 0.001 
RG 20 2 1.4 
CGS 2 3 2.711E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 5.2E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 5.378E+005  ETA = 0.001  VTO = 2.227 
+ TOX = 6E-008  NSUB = 1E+016  KP = 9.816  U0 = 400  KAPPA = 10 
.MODEL DCGD D  CJO = 2.317E-010  VJ = 0.2783  M = 0.4405 
.MODEL DSUB D  IS = 1E-015  N = 0.8731  RS = 0.04482  BV = 35  CJO = 1.086E-011  VJ = 0.4101  M = 0.9 
.MODEL DLIM D  IS = 0.0001 
.ENDS

*PMOS
.SUBCKT DMG6602SVT_P 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.04762 
RS 30 3 0.001 
RG 20 2 17 
CGS 2 3 3.334E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 3.9E-010 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 7.77E+005  ETA = 0.001 
+ TOX = 6E-008  NSUB = 1E+016  KP = 7.61  KAPPA = 25  VTO = -1.533 
.MODEL DCGD D  CJO = 1.725E-010  VJ = 0.4474  M = 0.3707 
.MODEL DSUB D  IS = 1.119E-011  N = 1.169  RS = 0.06724  BV = 35  CJO = 2.406E-011  VJ = 0.1  M = 0.8 
.MODEL DLIM D  IS = 0.0001 
.ENDS

*Diodes DMG6602SVT Spice Model v1.0 Last Revised 2011/8/15


*---------- DMC3025LSD Spice Model ----------

*NMOS
.SUBCKT DMC3025LSD_NMOS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01437 
RS 30 3 0.001 
RG 20 2 1.84 
CGS 2 3 4.55E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 4.1E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 2.222 
+ TOX = 6E-008 NSUB = 1E+017 KP = 35.61 KAPPA = 1E-015 U0 = 400 
.MODEL DCGD D CJO = 2.222E-010 VJ = 0.2975 M = 0.3378 
.MODEL DSUB D IS = 2.278E-010 N = 1.242 RS = 0.007361 
+ BV = 35 CJO = 4.795E-011 VJ = 0.3436 M = 0.5232 
.MODEL DLIM D IS = 0.0001 
.ENDS


*PMOS

.SUBCKT DMC3025LSD_PMOS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01769 
RS 30 3 0.001 
RG 20 2 10.8 
CGS 2 3 5.834E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 3.85E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 TOX = 6E-008 
+ NSUB = 1E+016 KP = 8.945 KAPPA = 11.93 VTO = -1.877 
.MODEL DCGD D CJO = 1.097E-010 VJ = 1 M = 0.24 
.MODEL DSUB D IS = 2.613E-010 N = 1.268 RS = 0.01102 BV = 50 
+ CJO = 1.637E-010 VJ = 0.753 M = 0.6004 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMC3025LSD Spice Model v1.0 Last Revised 2013/4/16


*---------- DMC31D5UDJ Spice Model ----------

*NMOS
.SUBCKT DMC31D5UDJ_NMOS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.7969 
RS 30 3 0.001 
RG 20 2 219 
CGS 2 3 2.124E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 6.5E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8E+005  ETA = 0  VTO = 0.7496 
+ TOX = 6E-008  NSUB = 1E+016  KP = 1.745  U0 = 400  KAPPA = 1 
.MODEL DCGD D  CJO = 1.072E-011  VJ = 0.111  M = 0.4766 
.MODEL DSUB D  IS = 8.906E-008  N = 1.859  RS = 0.9141  BV = 35  CJO = 1.64E-012  VJ = 0.1  M = 0.1 
.MODEL DLIM D  IS = 0.0001 
.ENDS


*PMOS
.SUBCKT DMC31D5UDJ_P 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 1.727 
RS 30 3 0.001 
RG 20 2 389 
CGS 2 3 2.041E-011 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 5.3E-011 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1E+006  ETA = 0.001  
+ TOX = 6E-008  NSUB = 1E+016  KP = 0.5546  KAPPA = 49.86  VTO = -0.7516 
.MODEL DCGD D  CJO = 7.862E-012  VJ = 0.2  M = 0.3592 
.MODEL DSUB D  IS = 2.888E-005  N = 4.275  RS = 4.441E-010  BV = 35  CJO = 2.878E-012  VJ = 0.6  M = 0.2781 
.MODEL DLIM D  IS = 0.0001 
.ENDS

*Diodes DMC31D5UDJ Spice Model v1.0 Last Revised 2014/12/5



*---------- DMC3400SDW Spice Model ----------

*NMOS

.SUBCKT DMC3400SDW_N 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.08876 
RS 30 3 0.001 
RG 20 2 91.88 
CGS 2 3 5E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 8E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.728 
+ TOX = 6E-008 NSUB = 1E+016 KP = 1.286 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 2.92E-011 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.377E-010 N = 1.449 RS = 0.8337 BV = 30 CJO = 1.5E-011 VJ = 0.6427 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS


*PMOS

.SUBCKT DMC3400SDW_P 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.2004 
RS 30 3 0.001 
RG 20 2 240.1 
CGS 2 3 4.97E-011 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 7.5E-011 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.8889 KAPPA = 19.32 VTO = -1.774 
.MODEL DCGD D CJO = 2.466E-011 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.247E-010 N = 1.538 RS = 0.6734 BV = 30 CJO = 2.286E-011 VJ = 0.6656 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMC3400SDW Spice Model v1.0 Last Revised 2015/8/27



*---------- DMC3730UFL3 Spice Model ----------

*NMOS
.SUBCKT DMC3730UFL3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.2286 
RS 30 3 0.001 
RG 20 2 1.08 
CGS 2 3 6E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 9E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8442 
+ TOX = 6E-008 NSUB = 1E+016 KP = 6.177 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 3.263E-011 VJ = 0.6 M = 0.6 
.MODEL DSUB D IS = 1.909E-009 N = 1.3 RS = 0.4387 BV = 34 CJO = 1E-015 VJ = 0.6 M = 0.7823 
.MODEL DLIM D IS = 0.0001 
.ENDS

*PMOS
.SUBCKT DMC3730UFL3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.4982 
RS 30 3 0.001 
RG 20 2 177.7 
CGS 2 3 8.153E-011 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 6.5E-011 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 2.741 KAPPA = 19.32 VTO = -0.9343 
.MODEL DCGD D CJO = 2.569E-011 VJ = 0.6 M = 0.6165 
.MODEL DSUB D IS = 4.013E-007 N = 2.187 RS = 0.2665 BV = 38 CJO = 1.212E-011 VJ = 0.71 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMC3730UFL3 Spice Model v1.0M Last Revised 2016/4/1


*---------- DMC3025LNS Spice Model ----------

*NMOS

.SUBCKT DMC3025LNS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01437 
RS 30 3 0.001 
RG 20 2 1.84 
CGS 2 3 4.55E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 4.1E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 2.222 
+ TOX = 6E-008 NSUB = 1E+017 KP = 35.61 KAPPA = 1E-015 U0 = 400 
.MODEL DCGD D CJO = 2.222E-010 VJ = 0.2975 M = 0.3378 
.MODEL DSUB D IS = 2.278E-010 N = 1.242 RS = 0.007361 BV = 35 CJO = 4.795E-011 VJ = 0.3436 M = 0.5232 
.MODEL DLIM D IS = 0.0001 
.ENDS

*PMOS

.SUBCKT DMC3025LNS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01336 
RS 30 3 0.001 
RG 20 2 8.56 
CGS 2 3 1.2E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 6.5E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 18.68 KAPPA = 19.32 VTO = -1.634 
.MODEL DCGD D CJO = 2.5E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.291E-010 N = 1.209 RS = 0.01908 BV = 34 CJO = 2.5E-010 VJ = 0.8 M = 0.6 TT = 5.17E-009 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMC3025LNS Spice Model v1.0M Last Revised 2016/9/7



*---------- DMC3025LDV Spice Model ----------

*NMOS

.SUBCKT DMC3025LDV 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01437 
RS 30 3 0.001 
RG 20 2 1.84 
CGS 2 3 4.55E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 4.1E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 2.222 
+ TOX = 6E-008 NSUB = 1E+017 KP = 35.61 KAPPA = 1E-015 U0 = 400 
.MODEL DCGD D CJO = 2.222E-010 VJ = 0.2975 M = 0.3378 
.MODEL DSUB D IS = 2.278E-010 N = 1.242 RS = 0.007361 BV = 35 CJO = 4.795E-011 VJ = 0.3436 M = 0.5232 
.MODEL DLIM D IS = 0.0001 
.ENDS

*PMOS

.SUBCKT DMC3025LDV 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01336 
RS 30 3 0.001 
RG 20 2 8.56 
CGS 2 3 1.2E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 6.5E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 18.68 KAPPA = 19.32 VTO = -1.634 
.MODEL DCGD D CJO = 2.5E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.291E-010 N = 1.209 RS = 0.01908 BV = 34 CJO = 2.5E-010 VJ = 0.8 M = 0.6 TT = 5.17E-009 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMC3025LDV Spice Model v1.0M Last Revised 2016/9/7



*---------- DMC3016LNS Spice Model ----------

*NMOS

.SUBCKT DMC3016LNS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.007058 
RS 30 3 0.001 
RG 20 2 2.94 
CGS 2 3 1.348E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.222 
+ TOX = 6E-008 NSUB = 1E+016 KP = 121.1 U0 = 400 KAPPA = 1E-015 
.MODEL DCGD D CJO = 3.779E-010 VJ = 0.6 M = 0.4637 
.MODEL DSUB D IS = 2.322E-010 N = 1.242 RS = 0.002024 BV = 45 CJO = 1.63E-010 VJ = 0.7 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS

*PMOS

.SUBCKT DMC3016LNS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01336 
RS 30 3 0.001 
RG 20 2 8.56 
CGS 2 3 1.2E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 6.5E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 18.68 KAPPA = 19.32 VTO = -1.634 
.MODEL DCGD D CJO = 2.5E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.291E-010 N = 1.209 RS = 0.01908 BV = 34 CJO = 2.5E-010 VJ = 0.8 M = 0.6 TT = 5.17E-009 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMC3016LNS Spice Model v1.0M Last Revised 2016/9/7



*---------- DMC3016LDV Spice Model ----------

*NMOS

.SUBCKT DMC3016LDV 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.007058 
RS 30 3 0.001 
RG 20 2 2.94 
CGS 2 3 1.348E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.222 
+ TOX = 6E-008 NSUB = 1E+016 KP = 121.1 U0 = 400 KAPPA = 1E-015 
.MODEL DCGD D CJO = 3.779E-010 VJ = 0.6 M = 0.4637 
.MODEL DSUB D IS = 2.322E-010 N = 1.242 RS = 0.002024 BV = 45 CJO = 1.63E-010 VJ = 0.7 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS

*PMOS

.SUBCKT DMC3016LDV 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01336 
RS 30 3 0.001 
RG 20 2 8.56 
CGS 2 3 1.2E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 6.5E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 18.68 KAPPA = 19.32 VTO = -1.634 
.MODEL DCGD D CJO = 2.5E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.291E-010 N = 1.209 RS = 0.01908 BV = 34 CJO = 2.5E-010 VJ = 0.8 M = 0.6 TT = 5.17E-009 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMC3016LDV Spice Model v1.0M Last Revised 2016/9/7



*DIODES_INC_SPICE_MODEL DMG6601LVT
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=31Mar2014
*VERSION=1

.SUBCKT DMG6601LVT G1 S2 G2 D2 S1 D1

*NMOS


M1 1 2 3 3  Nmod1 
RD D1 1 Rmod1 18E-3
RS 23 3 Rmod1 24E-3
RG G1 22 2
RIN G1 23 2E11
RDS D1 23 2E9
CGS 2 3 280E-12 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 840E-12 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 23 D1  DSUB
EL 2 22 1 3 0.003
LS S1 23 2E-9
RL S1 23 3
RLrun S1 S2 3E+9
.MODEL Nmod1 NMOS (LEVEL=3 VTO=1.31 TOX=4.5E-8 NSUB=1E+16 KP=50 NFS=1E+11 IS=1E-15 N=10)
.MODEL DCGD D (CJO = 72E-12  VJ = 0.45  M = 0.33 T_ABS=25)
.MODEL DSUB D (IS=1E-12 N=1.03 RS=0.022 BV=33 CJO=120E-12 VJ=0.45 M=0.33 TT=3E-9 TRS1=.0035)
.MODEL Rmod1 RES (TC1=1e-3 TC2=1E-6)


.SIMULATOR DEFAULT

*PMOS


M2 4 5 6 6  Pmod1
RD2 D2 4 Rmod2 40E-3
RS2 53 6 Rmod2 50E-3
RG2 G2 52 17
RIN2 G2 53 2E11
RDS2 D2 53 2E9
CGS2 5 6 460E-12 
EGD2 16 0 4 5 1
VFB2 18 0 0 
FFB2 4 5 VFB2 1 
CGD2 17 18 860E-12 
R12 17 0 1 
D12 16 17  DLIM 
DDG2 19 18  DCGD2 
R22 16 19 1 
D22 19 0  DLIM 
DSD2 D2 53 DSUB2
EL2 5 52 4 6 .003
RL2 S2 53 3
LS2 S2 53 2E-9
.MODEL Pmod1 PMOS (LEVEL=3 VTO=-1.2 TOX=4.5E-8 NSUB=1E+15 KP=45 NFS=1E+11 IS=1E-15 N=10)
.MODEL DCGD2 D (CJO = 100E-12  VJ = 0.45  M = 0.33 T_ABS=25)
.MODEL DSUB2 D (IS=.14E-12 N=1.02 RS=0.033 BV=33 CJO=94E-12 VJ=.45 M=0.33 TT=3E-9 TRS1=.002)
.MODEL Rmod2 RES (TC1=2.5e-3 TC2=1E-6)





*common model for PMOS and NMOS

.MODEL DLIM D (IS=100U N=1 T_ABS=25)

.ENDS


*                     (c)  2014 Diodes Inc
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL



*DIODES_INC_SPICE_MODEL ZXMC10A816N8
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=17Sep2014
*VERSION=1

** Imported from: C:UserssuppuluriDesktopXMC10A816N8XMC10A816.txt

** PINS: 1=S1 , 2=G1, 3=S2, 4=G2, 5=D21, 6=D22, 7=D11, 8=D12


.SUBCKT ZXMC10A816N8 D11 G1 S1 D21 G2 S2 D12 D22


*NMOS

M1 1 2 3 3  Nmod1 
RD D11 1 Rmod1 90E-3
RS 23 3 Rmod1 84E-3
RG G1 22 10
RIN G1 23 2E11
RDS D11 23 2E9
CGS 2 3 370E-12 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 380E-12 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 23 D11  DSUB
EL 2 22 1 3 0.0035
LS S1 23 2E-9
RL S1 S2 3E+10
.MODEL Nmod1 NMOS (LEVEL=3 VTO=3.45 TOX=11E-8 NSUB=2.83E+15 KP=50 NFS=1E+12 IS=1E-15 N=10)
.MODEL DCGD D (CJO = 8E-12  VJ = 0.6  M = 0.33 T_ABS=25)
.MODEL DSUB D (IS =5E-12 N=1.08 RS=0.02 BV=105 CJO=200E-12 VJ=0.53 M=0.55 TT=40E-9 IKF=200m)
.MODEL Rmod1 RES (TC1=1E-3 TC2=6E-6)


*PMOS

M2 4 5 6 6  Pmod1
RD2 D21 4 Rmod2 130E-3
RS2 53 6 Rmod2 84E-3
RG2 G2 52 240
RIN2 G2 53 2E11
RDS2 D21 53 2E9
CGS2 5 6 500E-12 
EGD2 16 0 4 5 1
VFB2 18 0 0 
FFB2 4 5 VFB2 1 
CGD2 17 18 600E-12 
R12 17 0 1 
D12 16 17  DLIM 
DDG2 19 18  DCGD2 
R22 16 19 1 
D22 19 0  DLIM 
DSD2 D21 53 DSUB2
EL2 5 52 4 6 .0003
RL2 S2 53 3
LS2 S2 53 2E-9
.MODEL Pmod1 PMOS (LEVEL=3 VTO=-3.4 TOX=11E-8 NSUB=3.56E+16 KP=60 NFS=.1E+12 IS=1E-15 N=10)
.MODEL DCGD2 D (CJO = 240E-12  VJ = 0.45  M = 0.33 T_ABS=25)
.MODEL DSUB2 D (IS=1E-12 N=1 RS=0.012 BV=105 CJO=100E-12 VJ=0.45 M=0.33 TT=40E-9 IKF=140m TRS1=1.5m)
.MODEL Rmod2 RES (TC1=2.6e-3 TC2=3E-6)


*common model for PMOS and NMOS

.MODEL DLIM D (IS=100U N=1 T_ABS=25)
Rdrain1 D11 D12 .001m
Rdrain2 D21 D22 .001m
.ENDS



*                (c)  2014 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*---------- DMG4511SK4 Spice Model ----------

*NMOS
.SUBCKT DMG4511SK4_N 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.02 
RS 30 3 0.0001227 
RG 20 2 1.56 
CGS 2 3 8.311E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 9.4E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0.001  VTO = 2.45 
+ TOX = 6E-008  NSUB = 1E+016  KP = 43.98  U0 = 400  KAPPA = 10 
.MODEL DCGD D  CJO = 3.144E-010  VJ = 0.09587  M = 0.3239 
.MODEL DSUB D  IS = 3.094E-011  N = 1.136  RS = 0.01791  BV = 40  CJO = 1.281E-010  VJ = 0.3722  M = 0.5383 
.MODEL DLIM D  IS = 0.0001 
.ENDS

*PMOS
.SUBCKT DMG4511SK4_P 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.02422 
RS 30 3 0.001 
RG 20 2 7 
CGS 2 3 9.898E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 8E-010 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1.558E+005  ETA = 0.0001 
+ TOX = 6E-008  NSUB = 1E+016  KP = 16.62  KAPPA = 1  VTO = -1.536 
.MODEL DCGD D  CJO = 3.059E-010  VJ = 0.1859  M = 0.2861 
.MODEL DSUB D  IS = 3.103E-011  N = 1.129  RS = 0.03535  BV = 45  CJO = 1.446E-010  VJ = 0.8474  M = 0.6504 
.MODEL DLIM D  IS = 0.0001 
.ENDS

*Diodes DMG4511SK4 Spice Model v1.0 Last Revised 2011/10/28


*---------- DMG1029SV Spice Model ----------

*NMOS
.SUBCKT DMG1029SV_N 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 1.631 
RS 30 3 0.001 
RG 20 2 133 
CGS 2 3 2.711E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 2.628E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0  VTO = 1.596 
+ TOX = 6E-008  NSUB = 1.945E+017  KP = 1.196  KAPPA = 1E-015  U0 = 400  THETA = 5.648E-007 
.MODEL DCGD D  CJO = 2.628E-011  VJ = 0.009081  M = 0.2561 
.MODEL DSUB D  IS = 2.05E-009  N = 1.698  RS = 0.1282  BV = 65  CJO = 6.226E-012  VJ = 1  M = 0.6474 
.MODEL DLIM D  IS = 0.0001 
.ENDS

*PMOS
.SUBCKT DMG1029SV_P 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 2.072 
RS 30 3 0.001 
RG 20 2 50 
CGS 2 3 2.301E-011 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 4.1E-011 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 TOX = 6E-008 NSUB = 1E+016 KP = 0.3083 KAPPA = 32.1 VTO = -1.513 
.MODEL DCGD D CJO = 7.698E-012 VJ = 0.2 M = 0.2205 
.MODEL DSUB D IS = 9.579E-010 N = 1.677 RS = 0.1623  BV = 65 CJO = 9.694E-012 VJ = 0.4761 M = 0.3849 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMG1029SV Spice Model v1.0 Last Revised 2012/4/17


*---------- DMC4029SSD Spice Model ----------
**************************************************************************************
* NMOS
.SUBCKT DMC4029SSD_NMOS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.008754 
RS 30 3 0.001 
RG 20 2 1.7 
CGS 2 3 1.04E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 6.6E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 2.455 
+ TOX = 6E-008 NSUB = 1E+017 KP = 49.07 KAPPA = 1E-015 U0 = 400 
.MODEL DCGD D CJO = 2.703E-010 VJ = 0.2734 M = 0.3551 
.MODEL DSUB D IS = 2.278E-010 N = 1.242 RS = 0.007361 
+ BV = 50 CJO = 2.302E-010 VJ = 0.3812 M = 0.5232 
.MODEL DLIM D IS = 0.0001 
.ENDS
********************************************************************************V
* PMOS
.SUBCKT DMC4029SSD_PMOS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.0269 
RS 30 3 0.001 
RG 20 2 12.6 
CGS 2 3 1.121E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 
+ TOX = 6E-008 NSUB = 1E+016 KP = 23.02 KAPPA = 53.88 VTO = -1.675 
.MODEL DCGD D CJO = 2.806E-010 VJ = 0.3881 M = 0.3064 
.MODEL DSUB D IS = 2.613E-010 N = 1.268 RS = 0.01102 
+ BV = 50 CJO = 1.89E-010 VJ = 4.441E-016 M = 1 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMC4029SSD Spice Model v1.0 Last Revised 2014/2/5


*---------- DMC4050SSDQ Spice Model ----------

*NMOS
.SUBCKT DMC4050SSDQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01247 
RS 30 3 0.001 
RG 20 2 1.29 
CGS 2 3 1.225E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.7E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.378 
+ TOX = 6E-008 NSUB = 1E+016 KP = 59.42 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 5.583E-010 VJ = 0.6 M = 0.6 
.MODEL DSUB D IS = 1.44E-009 N = 1.222 RS = 0.009951 BV = 47 CJO = 1E-015 VJ = 0.6 M = 0.7823 
.MODEL DLIM D IS = 0.0001 
.ENDS

*PMOS
.SUBCKT DMC4050SSDQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.006043 
RS 30 3 0.001 
RG 20 2 6.43 
CGS 2 3 1.554E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1.4E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 
+ TOX = 6E-008 NSUB = 1E+016 KP = 11.66 KAPPA = 9.057 VTO = -1.385 
.MODEL DCGD D CJO = 5.62E-010 VJ = 0.6 M = 0.4221 
.MODEL DSUB D IS = 4.586E-010 N = 1.275 RS = 0.01773 BV = 50 CJO = 2.892E-010 VJ = 0.0947 M = 0.3174 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMC4050SSDQ Spice Model v1.0M Last Revised 2016/4/1


*---------- DMC6040SSDQ Spice Model ----------

*NMOS

.SUBCKT DMC6040SSDQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.03016 
RS 30 3 0.001 
RG 20 2 1.66 
CGS 2 3 1.107E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 8.5E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.359 
+ TOX = 6E-008 NSUB = 1E+016 KP = 58.33 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.99E-010 VJ = 0.7999 M = 0.6 
.MODEL DSUB D IS = 2.23E-010 N = 1.26 RS = 0.006689 BV = 67 CJO = 2.221E-010 VJ = 0.6969 M = 0.6 TT=7E-09
.MODEL DLIM D IS = 0.0001 
.ENDS

*PMOS

.SUBCKT DMC6040SSDQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.0844 
RS 30 3 0.001 
RG 20 2 13.61 
CGS 2 3 1.079E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 7.5E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 14.83 KAPPA = 19.32 VTO = -1.879 
.MODEL DCGD D CJO = 2E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 3.531E-010 N = 1.296 RS = 0.01283 BV = 67 CJO = 2.66E-011 VJ = 0.8 M = 0.6 TT=7E-09
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMP6040SSDQ Spice Model v1.0M Last Revised 2016/5/3


*---------- DMC4029SK4 Spice Model ----------
**************************************************************************************
* NMOS
.SUBCKT DMC4029SK4_NMOS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.008754 
RS 30 3 0.001 
RG 20 2 1.7 
CGS 2 3 1.04E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 6.6E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 2.455 
+ TOX = 6E-008 NSUB = 1E+017 KP = 49.07 KAPPA = 1E-015 U0 = 400 
.MODEL DCGD D CJO = 2.703E-010 VJ = 0.2734 M = 0.3551 
.MODEL DSUB D IS = 2.278E-010 N = 1.242 RS = 0.007361 
+ BV = 50 CJO = 2.302E-010 VJ = 0.3812 M = 0.5232 
.MODEL DLIM D IS = 0.0001 
.ENDS
********************************************************************************V
* PMOS
.SUBCKT DMC4029SK4_PMOS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.0269 
RS 30 3 0.001 
RG 20 2 12.6 
CGS 2 3 1.121E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 
+ TOX = 6E-008 NSUB = 1E+016 KP = 23.02 KAPPA = 53.88 VTO = -1.675 
.MODEL DCGD D CJO = 2.806E-010 VJ = 0.3881 M = 0.3064 
.MODEL DSUB D IS = 2.613E-010 N = 1.268 RS = 0.01102 
+ BV = 50 CJO = 1.89E-010 VJ = 4.441E-016 M = 1 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMC4029SK4 Spice Model v1.0M Last Revised 2016/6/14



*SRC=BSS84;DI_BSS84;MOSFETs P;Enh;50.0V 0.130A 6.00ohms  Diodes Inc. MOSFET
.MODEL DI_BSS84  PMOS( LEVEL=1 VTO=-1.60 KP=4.87m  GAMMA=1.98
+ PHI=.75  LAMBDA=1.25m RD=0.840 RS=0.840
+ IS=65.0f  PB=0.800 MJ=0.460 CBD=46.6p
+ CBS=55.9p  CGSO=50.7n CGDO=42.2n CGBO=69.5n  )
*   -- Assumes default L=100U W=100U -- 

*SRC=2N7002;2N7002;MOSFETs N;Enh;60.0V 0.115A 7.50ohms  Diodes Inc. -
.MODEL 2N7002  NMOS( LEVEL=1 VTO=2.50 KP=32.0m  GAMMA=3.10
+ PHI=.75  LAMBDA=39.9u RD=1.05 RS=1.05
+ IS=57.5f  PB=0.800 MJ=0.460 CBD=98.8p 
+ CBS=119p  CGSO=60.0n CGDO=50.0n CGBO=390n  )
*   -- Assumes default L=100U W=100U --


*---------- DMC4040SSDQ Spice Model ----------

*NMOS
.SUBCKT DMC4040SSDQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01247 
RS 30 3 0.001 
RG 20 2 1.29 
CGS 2 3 1.225E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.7E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.378 
+ TOX = 6E-008 NSUB = 1E+016 KP = 59.42 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 5.583E-010 VJ = 0.6 M = 0.6 
.MODEL DSUB D IS = 1.44E-009 N = 1.222 RS = 0.009951 BV = 47 CJO = 1E-015 VJ = 0.6 M = 0.7823 
.MODEL DLIM D IS = 0.0001 
.ENDS

*PMOS
.SUBCKT DMC4040SSDQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.006043 
RS 30 3 0.001 
RG 20 2 6.43 
CGS 2 3 1.554E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1.4E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 
+ TOX = 6E-008 NSUB = 1E+016 KP = 11.66 KAPPA = 9.057 VTO = -1.385 
.MODEL DCGD D CJO = 5.62E-010 VJ = 0.6 M = 0.4221 
.MODEL DSUB D IS = 4.586E-010 N = 1.275 RS = 0.01773 BV = 50 CJO = 2.892E-010 VJ = 0.0947 M = 0.3174 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMC4040SSDQ Spice Model v1.0M Last Revised 2016/5/6



*N-CH
.SUBCKT DMG1016VN   D=10 G=20 S=30
*     TERMINALS:  D  G  S
M1   1  2  3  3  NMOS L=0.6U W=57.5m
RD  10  1  240m
RS  30  3  60m
RG  20  2  93
CGS  2  3  57p
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  27p
R1  13  0  1.00
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1.00
D2  15  0  DLIM
DSD  3 10  DSUB
*********************************************
.MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k
+ ETA=0.1m VTO=0.93 TOX=16.8n NSUB=1e17
*********************************************
.MODEL DCGD D CJO=27p VJ=80m M=0.320
*********************************************
.MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20
+ CJO=14p VJ=0.800 M=0.420
*********************************************
.MODEL DLIM D IS=100U
*********************************************
.ENDS DMG1016VN
*P-CH
.SUBCKT DMG1016VP   D=10 G=20 S=30
*     TERMINALS:  D  G  S
M1   1  2  3  3  PMOS L=0.6U W=41m
RD  10  1  300m
RS  30  3  75m
RG  20  2  150
CGS  2  3  54.55p
EGD 12  30  2  1  1
VFB 14  30  0
FFB  2  1  VFB  1
CGD 13 14  22.2p
R1  13  30  1.00
D1  13 12  DLIM
DDG 14 15  DCGD
R2  12 15  1.00
D2  30  15  DLIM
DSD 10  3  DSUB
*********************************************
.MODEL PMOS PMOS LEVEL=3 U0=300 VMAX=40k
+ ETA=0.1m VTO=-0.952 TOX=16.8n NSUB=2e17
*********************************************
.MODEL DCGD D CJO=22.2p VJ=0.150 M=0.270
*********************************************
.MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20
+ CJO=20p VJ=0.600 M=0.350
*********************************************
.MODEL DLIM D IS=100U
*********************************************
.ENDS DMG1016VP


*---------- DMC2004LPK Spice Model ----------

*NMOS
.SUBCKT DMC2004LPK_N 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.1925 
RS 30 3 0.001 
RG 20 2 68 
DESD1 2 5 DESD
DESD2 3 5 DESD
CGS 2 3 3.272E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 6.7E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0.01  VTO = 0.9058 
+ TOX = 6E-008  NSUB = 1E+016  KP = 3.223  U0 = 400  KAPPA = 15.35 
.MODEL DCGD D  CJO = 1.94E-011  VJ = 0.1108  M = 0.3101 
.MODEL DSUB D  IS = 1E-009  N = 1.905  RS = 0.02633  BV = 25  CJO = 5.066E-012  VJ = 0.1753  M = 0.2672 
.MODEL DLIM D  IS = 0.0001 
.MODEL DESD D  IS=2E-7 N=2.2 BV=13
.ENDS


*PMOS
.SUBCKT DMC2004LPK_P 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.4041 
RS 30 3 0.001 
RG 20 2 14.3 
DESD1 2 5 DESD
DESD2 3 5 DESD
CGS 2 3 4.178E-011 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 5.7E-011 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1E+006  ETA = 0.001 
+ TOX = 6E-008  NSUB = 1E+016  KP = 1.095  KAPPA = 49.86  VTO = -0.8823 
.MODEL DCGD D  CJO = 1.311E-011  VJ = 0.2302  M = 0.2576 
.MODEL DSUB D  IS = 3E-009  N = 1.688  RS = 0.5  BV = 25  CJO = 6.498E-012  VJ = 0.3007  M = 0.2934 
.MODEL DLIM D  IS = 0.0001 
.MODEL DESD D  IS=1E-7 N=2.2 BV=12.3
.ENDS

*Diodes DMC2004LPK Spice Model v1.0 (ESD added)  Last Revised 2012/6/1


*---------- DMC2004DWK Spice Model ----------

*NMOS
.SUBCKT DMC2004DWK_N 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.1925 
RS 30 3 0.001 
RG 20 2 68 
DESD1 2 5 DESD
DESD2 3 5 DESD
CGS 2 3 3.272E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 6.7E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0.01  VTO = 0.9058 
+ TOX = 6E-008  NSUB = 1E+016  KP = 3.223  U0 = 400  KAPPA = 15.35 
.MODEL DCGD D  CJO = 1.94E-011  VJ = 0.1108  M = 0.3101 
.MODEL DSUB D  IS = 1E-009  N = 1.905  RS = 0.02633  BV = 25  CJO = 5.066E-012  VJ = 0.1753  M = 0.2672 
.MODEL DLIM D  IS = 0.0001 
.MODEL DESD D  IS=2E-7 N=2.2 BV=13
.ENDS


*PMOS
.SUBCKT DMC2004DWK_P 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.4041 
RS 30 3 0.001 
RG 20 2 14.3 
DESD1 2 5 DESD
DESD2 3 5 DESD
CGS 2 3 4.178E-011 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 5.7E-011 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1E+006  ETA = 0.001 
+ TOX = 6E-008  NSUB = 1E+016  KP = 1.095  KAPPA = 49.86  VTO = -0.8823 
.MODEL DCGD D  CJO = 1.311E-011  VJ = 0.2302  M = 0.2576 
.MODEL DSUB D  IS = 3E-009  N = 1.688  RS = 0.5  BV = 25  CJO = 6.498E-012  VJ = 0.3007  M = 0.2934 
.MODEL DLIM D  IS = 0.0001 
.MODEL DESD D  IS=1E-7 N=2.2 BV=12.3
.ENDS

*Diodes DMC2004DWK Spice Model v1.0 (ESD added)  Last Revised 2012/6/1


*---------- DMC2004VK Spice Model ----------

*NMOS
.SUBCKT DMC2004VK_N 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.1925 
RS 30 3 0.001 
RG 20 2 68 
DESD1 2 5 DESD
DESD2 3 5 DESD
CGS 2 3 3.272E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 6.7E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0.01  VTO = 0.9058 
+ TOX = 6E-008  NSUB = 1E+016  KP = 3.223  U0 = 400  KAPPA = 15.35 
.MODEL DCGD D  CJO = 1.94E-011  VJ = 0.1108  M = 0.3101 
.MODEL DSUB D  IS = 1E-009  N = 1.905  RS = 0.02633  BV = 25  CJO = 5.066E-012  VJ = 0.1753  M = 0.2672 
.MODEL DLIM D  IS = 0.0001 
.MODEL DESD D  IS=2E-7 N=2.2 BV=13
.ENDS


*PMOS
.SUBCKT DMC2004VK_P 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.4041 
RS 30 3 0.001 
RG 20 2 14.3 
DESD1 2 5 DESD
DESD2 3 5 DESD
CGS 2 3 4.178E-011 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 5.7E-011 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1E+006  ETA = 0.001 
+ TOX = 6E-008  NSUB = 1E+016  KP = 1.095  KAPPA = 49.86  VTO = -0.8823 
.MODEL DCGD D  CJO = 1.311E-011  VJ = 0.2302  M = 0.2576 
.MODEL DSUB D  IS = 3E-009  N = 1.688  RS = 0.5  BV = 25  CJO = 6.498E-012  VJ = 0.3007  M = 0.2934 
.MODEL DLIM D  IS = 0.0001 
.MODEL DESD D  IS=1E-7 N=2.2 BV=12.3
.ENDS

*Diodes DMC2004VK Spice Model v1.0 (ESD added)  Last Revised 2012/6/1


*---------- DMC2038LVT Spice Model ----------

*NMOS
.SUBCKT DMC2038LVT_NMOS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.02716 
RS 30 3 0.001 
RG 20 2 1.9 
CGS 2 3 3.359E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 7.5E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 0.9264 
+ TOX = 6E-008 NSUB = 1E+017 KP = 48.04 KAPPA = 0.1 U0 = 400 
.MODEL DCGD D CJO = 3.417E-010 VJ = 0.2406 M = 0.4472 
.MODEL DSUB D IS = 2.969E-010 N = 1.598 RS = 0.02426 
+ BV = 35 CJO = 4.795E-011 VJ = 0.3436 M = 0.5232 
.MODEL DLIM D IS = 0.0001 
.ENDS

*PMOS
.SUBCKT DMC2038LVT_PMOS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.04586 
RS 30 3 0.001 
RG 20 2 72 
CGS 2 3 5.078E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 7.9E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 14.56 KAPPA = 1 VTO = -0.75 
.MODEL DCGD D CJO = 3.371E-010 VJ = 0.226 M = 0.4329 
.MODEL DSUB D IS = 1.334E-008 N = 1.338 RS = 0.1868 BV = 25 
+ CJO = 3.296E-011 VJ = 0.3087 M = 0.4639 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMC2038LVT_PMOS Spice Model v2.0 Last Revised 2013/8/27


*---------- DMC2990UDJ Spice Model ----------

*NMOS
.SUBCKT DMC2990UDJ_NMOS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.3743 
RS 30 3 0.001 
RG 20 2 113 
CGS 2 3 2.5E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 8E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0.01  VTO = 0.8716 
+ TOX = 6E-008  NSUB = 1.886E+016  KP = 2.108  U0 = 400  KAPPA = 10.7 
.MODEL DCGD D  CJO = 1.594E-011  VJ = 0.2646  M = 0.429 
.MODEL DSUB D  IS = 2.265E-009  N = 1.422  RS = 1.834  BV = 25  CJO = 2.7E-012  VJ = 0.2048  M = 0.1841 
.MODEL DLIM D  IS = 0.0001 
.ENDS


*PMOS
.SUBCKT DMC2990UDJ_PMOS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.6562 
RS 30 3 0.001 
RG 20 2 400 
CGS 2 3 2.653E-011 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 5.8E-011 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.6965 KAPPA = 32.11 VTO = -0.6305 
.MODEL DCGD D CJO = 1.549E-011 VJ = 0.1652 M = 0.3749 
.MODEL DSUB D IS = 3.478E-007 N = 2.097 RS = 3.705 
+ BV = 25 CJO = 3.247E-012 VJ = 1.719E-014 M = 0.02141 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMC2990UDJ Spice Model v1.0 Last Revised 2012/11/30


*---------- DMC2400UV Spice Model ----------

*NMOS
.SUBCKT DMC2400UV_NMOS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.1925 
RS 30 3 0.001 
RG 20 2 68 
CGS 2 3 3.272E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 6.7E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0.01  VTO = 0.9058 
+ TOX = 6E-008  NSUB = 1E+016  KP = 3.223  U0 = 400  KAPPA = 15.35 
.MODEL DCGD D  CJO = 1.94E-011  VJ = 0.1108  M = 0.3101 
.MODEL DSUB D  IS = 1E-009  N = 1.905  RS = 0.02633  BV = 25  CJO = 5.066E-012  VJ = 0.1753  M = 0.2672 
.MODEL DLIM D  IS = 0.0001 
.ENDS


*PMOS
.SUBCKT DMC2400UV_PMOS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.4041 
RS 30 3 0.001 
RG 20 2 14.3 
CGS 2 3 4.178E-011 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 5.7E-011 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1E+006  ETA = 0.001 
+ TOX = 6E-008  NSUB = 1E+016  KP = 1.095  KAPPA = 49.86  VTO = -0.8823 
.MODEL DCGD D  CJO = 1.311E-011  VJ = 0.2302  M = 0.2576 
.MODEL DSUB D  IS = 3E-009  N = 1.688  RS = 0.5  BV = 25  CJO = 6.498E-012  VJ = 0.3007  M = 0.2934 
.MODEL DLIM D  IS = 0.0001 
.ENDS

*Diodes DMC2400UV Spice Model v1.0 Last Revised 2014/11/18


*---------- DMC1229UFDB Spice Model ----------

*NMOS
.SUBCKT DMC1229UFDB_N 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.01212 
RS 30 3 0.001 
RG 20 2 1.26 
CGS 2 3 7.966E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 1.5E-009 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8E+005  ETA = 0.001  VTO = 0.842 
+ TOX = 6E-008  NSUB = 1E+016  KP = 85.31  U0 = 400  KAPPA = 4.441E-010 
.MODEL DCGD D  CJO = 5.233E-010  VJ = 0.5  M = 0.5671 
.MODEL DSUB D  IS = 1.415E-009  N = 1.088  RS = 0.04255  BV = 20  CJO = 1E-015  VJ = 0.6  M = 0.6045 
.MODEL DLIM D  IS = 0.0001 
.ENDS


*PMOS
.SUBCKT DMC1229UFDB_P 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.0273 
RS 30 3 0.001 
RG 20 2 57 
CGS 2 3 8.383E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 1.15E-009 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1E+006  ETA = 0.001 
+ TOX = 6E-008  NSUB = 1E+016  KP = 32.61  KAPPA = 49.86  VTO = -0.9861 
.MODEL DCGD D  CJO = 7.701E-010  VJ = 0.7998  M = 0.6 
.MODEL DSUB D  IS = 6.057E-009  N = 1.269  RS = 0.0595  BV = 20  CJO = 3.41E-012  VJ = 0.8  M = 0.6 
.MODEL DLIM D  IS = 0.0001 
.ENDS

*Diodes DMC1229UFDB Spice Model v1.0 Last Revised 2015/6/1




*---------- DMC1028UFDB Spice Model ----------

*NMOS
.SUBCKT DMC1028UFDB_N 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.01016 
RS 30 3 0.001 
RG 20 2 4.8 
CGS 2 3 6.15E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 1.5E-009 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8E+005  ETA = 0.001  VTO = 0.955 
+ TOX = 6E-008  NSUB = 1E+016  KP = 60.27  U0 = 400  KAPPA = 4.441E-010 
.MODEL DCGD D  CJO = 7.098E-010  VJ = 0.6435  M = 0.6 
.MODEL DSUB D  IS = 9.003E-010  N = 1.119  RS = 0.04018  BV = 50  CJO = 2.22E-010  VJ = 0.3  M = 0.6045 
.MODEL DLIM D  IS = 0.0001 
.ENDS


*PMOS
.SUBCKT DMC1028UFDB_P 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.03888 
RS 30 3 0.001 
RG 20 2 15 
CGS 2 3 5.112E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 8E-010 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1E+006  ETA = 0.001 
+ TOX = 6E-008  NSUB = 1E+016  KP = 17.45  KAPPA = 49.86  VTO = -0.7114 
.MODEL DCGD D  CJO = 3.238E-010  VJ = 0.6  M = 0.52 
.MODEL DSUB D  IS = 1.955E-008  N = 1.194  RS = 0.1356  BV = 30  CJO = 1.43E-012  VJ = 0.8  M = 0.6 
.MODEL DLIM D  IS = 0.0001 
.ENDS

*Diodes DMC1028UFDB Spice Model v1.0 Last Revised 2015/6/1


*---------- DMC2450UV Spice Model ----------



*NMOS
.SUBCKT DMC2450UV_N 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.2445 
RS 30 3 1E-008 
RG 20 2 68 
CGS 2 3 1.832E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5.732E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.9194 
+ TOX = 6E-008 NSUB = 1E+016 KP = 4.018 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 9.036E-011 VJ = 0.1064 M = 0.9082 
.MODEL DSUB D IS = 2.332E-010 N = 1.704 RS = 0.05944 BV = 23.5 CJO = 1E-015 VJ = 0.1745 M = 0.9133 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMC2450UV_N  Spice Model v1.0 Last Revised 2015/9/07


*N-CH
.SUBCKT DMG1016VQ   D=10 G=20 S=30
*     TERMINALS:  D  G  S
M1   1  2  3  3  NMOS L=0.6U W=57.5m
RD  10  1  240m
RS  30  3  60m
RG  20  2  93
CGS  2  3  57p
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  27p
R1  13  0  1.00
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1.00
D2  15  0  DLIM
DSD  3 10  DSUB
*********************************************
.MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k
+ ETA=0.1m VTO=0.93 TOX=16.8n NSUB=1e17
*********************************************
.MODEL DCGD D CJO=27p VJ=80m M=0.320
*********************************************
.MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20
+ CJO=14p VJ=0.800 M=0.420
*********************************************
.MODEL DLIM D IS=100U
*********************************************
.ENDS DMG1016VN
*P-CH
.SUBCKT DMG1016VP   D=10 G=20 S=30
*     TERMINALS:  D  G  S
M1   1  2  3  3  PMOS L=0.6U W=41m
RD  10  1  300m
RS  30  3  75m
RG  20  2  150
CGS  2  3  54.55p
EGD 12  30  2  1  1
VFB 14  30  0
FFB  2  1  VFB  1
CGD 13 14  22.2p
R1  13  30  1.00
D1  13 12  DLIM
DDG 14 15  DCGD
R2  12 15  1.00
D2  30  15  DLIM
DSD 10  3  DSUB
*********************************************
.MODEL PMOS PMOS LEVEL=3 U0=300 VMAX=40k
+ ETA=0.1m VTO=-0.952 TOX=16.8n NSUB=2e17
*********************************************
.MODEL DCGD D CJO=22.2p VJ=0.150 M=0.270
*********************************************
.MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20
+ CJO=20p VJ=0.600 M=0.350
*********************************************
.MODEL DLIM D IS=100U
*********************************************
.ENDS DMG1016VQ


*---------- DMC1030UFDBQ Spice Model ----------

*NMOS

.SUBCKT DMC1030UFDBQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01313 
RS 30 3 0.001 
RG 20 2 1.63 
CGS 2 3 8.902E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.22E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7701 
+ TOX = 6E-008 NSUB = 1E+016 KP = 89.51 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 4.613E-010 VJ = 0.6179 M = 0.6 
.MODEL DSUB D IS = 1.7E-009 N = 1.041 RS = 0.0586 BV = 20 CJO = 2.066E-015 VJ = 0.7549 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS


*PMOS

.SUBCKT DMC1030UFDBQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.03274 
RS 30 3 0.001 
RG 20 2 4.88 
CGS 2 3 7.966E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 9.5E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 22.87 KAPPA = 19.32 VTO = -0.844 
.MODEL DCGD D CJO = 8.091E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 1.135E-008 N = 1.287 RS = 0.07544 BV = 20 CJO = 1.739E-010 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMC1030UFDBQ Spice Model v1.0M Last Revised 2016/1/28


*---------- DMC1018UPD Spice Model ----------

*NMOS

*---------- DMC1018UPD Spice Model ----------
.SUBCKT DMC1018UPD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.003806 
RS 30 3 0.001 
RG 20 2 1.63 
CGS 2 3 1.22E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.17E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.141 
+ TOX = 6E-008 NSUB = 1E+016 KP = 99.78 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.283E-009 VJ = 0.6 M = 0.6 
.MODEL DSUB D IS = 4.518E-010 N = 1.111 RS = 0.01242 BV = 20 CJO = 2.066E-015 VJ = 0.7549 M = 0.6 TT=1.436E-08 
.MODEL DLIM D IS = 0.0001 
.ENDS

*PMOS

*---------- DMC1018UPD Spice Model ----------
.SUBCKT DMC1018UPD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01579 
RS 30 3 0.001 
RG 20 2 4.88 
CGS 2 3 7.293E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 39.52 KAPPA = 19.32 VTO = -1.151 
.MODEL DCGD D CJO = 5.814E-010 VJ = 0.6 M = 0.6 
.MODEL DSUB D IS = 3.068E-009 N = 1.23 RS = 0.03607 BV = 20 CJO = 1.832E-010 VJ = 0.6 M = 0.6244 TT=9.8E-09
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMP1018UPD Spice Model v1.0 Last Revised 2015/12/9


*---------- DMC1015UPD Spice Model ----------

*NMOS

.SUBCKT DMC1015UPD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.003806 
RS 30 3 0.001 
RG 20 2 1.63 
CGS 2 3 1.22E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.17E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.141 
+ TOX = 6E-008 NSUB = 1E+016 KP = 99.78 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.283E-009 VJ = 0.6 M = 0.6 
.MODEL DSUB D IS = 4.518E-010 N = 1.111 RS = 0.01242 BV = 20 CJO = 2.066E-015 VJ = 0.7549 M = 0.6 TT=1.436E-08 
.MODEL DLIM D IS = 0.0001 
.ENDS

*PMOS

.SUBCKT DMC1015UPD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.02073 
RS 30 3 0.001 
RG 20 2 10.39 
CGS 2 3 1.384E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1.3E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 44.98 KAPPA = 19.32 VTO = -0.9359 
.MODEL DCGD D CJO = 7.175E-010 VJ = 0.6 M = 0.6 
.MODEL DSUB D IS = 6.359E-007 N = 1.663 RS = 0.09391 BV = 20 CJO = 1.769E-012 VJ = 0.8 M = 0.6  
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMC1015UPD Spice Model v1.0M Last Revised 2016/3/23


*---------- DMC1016UPD Spice Model ----------

*NMOS

.SUBCKT DMC1016UPD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.003806 
RS 30 3 0.001 
RG 20 2 1.63 
CGS 2 3 1.22E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.17E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.141 
+ TOX = 6E-008 NSUB = 1E+016 KP = 99.78 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.283E-009 VJ = 0.6 M = 0.6 
.MODEL DSUB D IS = 4.518E-010 N = 1.111 RS = 0.01242 BV = 20 CJO = 2.066E-015 VJ = 0.7549 M = 0.6 TT=1.436E-08 
.MODEL DLIM D IS = 0.0001 
.ENDS

*PMOS

.SUBCKT DMC1016PD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.006917 
RS 30 3 0.001 
RG 20 2 12.02 
CGS 2 3 2.686E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 3.8E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 91.34 KAPPA = 19.32 VTO = -0.7199 
.MODEL DCGD D CJO = 1.478E-009 VJ = 0.6094 M = 0.6 
.MODEL DSUB D IS = 2.978E-008 N = 1.118 RS = 0.03405 BV = 20 CJO = 3.453E-010 VJ = 0.6 M = 0.6726 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMC1016UPD Spice Model v1.0M Last Revised 2016/3/23


*---------- DMC2990UDJQ Spice Model ----------

*NMOS
.SUBCKT DMC2990UDJQ_NMOS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.3743 
RS 30 3 0.001 
RG 20 2 113 
CGS 2 3 2.5E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 8E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0.01  VTO = 0.8716 
+ TOX = 6E-008  NSUB = 1.886E+016  KP = 2.108  U0 = 400  KAPPA = 10.7 
.MODEL DCGD D  CJO = 1.594E-011  VJ = 0.2646  M = 0.429 
.MODEL DSUB D  IS = 2.265E-009  N = 1.422  RS = 1.834  BV = 25  CJO = 2.7E-012  VJ = 0.2048  M = 0.1841 
.MODEL DLIM D  IS = 0.0001 
.ENDS


*PMOS
.SUBCKT DMC2990UDJQ_PMOS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.6562 
RS 30 3 0.001 
RG 20 2 400 
CGS 2 3 2.653E-011 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 5.8E-011 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.6965 KAPPA = 32.11 VTO = -0.6305 
.MODEL DCGD D CJO = 1.549E-011 VJ = 0.1652 M = 0.3749 
.MODEL DSUB D IS = 3.478E-007 N = 2.097 RS = 3.705 
+ BV = 25 CJO = 3.247E-012 VJ = 1.719E-014 M = 0.02141 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMC2990UDJQ Spice Model v1.0 Last Revised 2016/9/21


*ZETEX ZVP0545A Spice Model v1.0 Last Revised 4/8/2004
    *              
    *
    .SUBCKT ZVP0545A 3 4 5
    *                D G S
    M1 6 20 8 8 MOSMOD
    M2 6 20 8 8 MOSMODS
    RG 4 2 85
    RIN 2 8 200E6
    RD 3 6 RMOD1 71
    RS 8 5 RMOD1 6.6 
    RL 3 5 200E6
    C1 2 8 110E-12
    D1 3 5 DMOD1
    D2 3 17 DMOD2
    Egs1 2 17 2 8 1
    Egt1 2 20 5 21 1
    Vgt1 5 22 1
    Igt1 5 21 1
    Rgt 21 22 RMOD2 1
    .MODEL MOSMOD PMOS VTO=-2.56 IS=1E-15 KP=.059 CBD=15E-12 PB=1 LAMBDA=4.9E-3
    .MODEL MOSMODS PMOS VTO=-2.2 IS=1E-15 KP=0.002 PB=1
    .MODEL DMOD1 D IS=2E-13 RS=10 N=1.01 IKF=3e-3
    .MODEL DMOD2 D CJO=18e-12 IS=1e-30 N=10
    .MODEL RMOD1 RES (TC1=8E-3 TC2=1.7E-5)
    .MODEL RMOD2 RES (TC1=-2.5e-3 TC2=3.3e-6)
    .ENDS
    *
    *$
    *


*ZETEX ZVP0545G Spice Model v1.2 Last Revised 20/05/2004
    *              
    *
    .SUBCKT ZVP0545G 3 4 5
    *                D G S
    M1 6 20 8 8 MOSMOD
    M2 6 20 8 8 MOSMODS
    RG 4 2 85
    RIN 2 8 200E6
    RD 3 6 RMOD1 71
    RS 8 5 RMOD1 6.6 
    RL 3 5 200E6
    C1 2 8 110E-12
    D1 3 5 DMOD1
    D2 3 17 DMOD2
    Egs1 2 17 2 8 1
    Egt1 2 20 5 21 1
    Vgt1 5 22 1
    Igt1 5 21 1
    Rgt 21 22 RMOD2 1
    .MODEL MOSMOD PMOS VTO=-2.56 IS=1E-15 KP=.059 CBD=15E-12 PB=1 LAMBDA=4.9E-3
    .MODEL MOSMODS PMOS VTO=-2.2 IS=1E-15 KP=0.002 PB=1
    .MODEL DMOD1 D IS=2E-13 RS=10 N=1.01 IKF=3e-3
    .MODEL DMOD2 D CJO=18e-12 IS=1e-30 N=10
    .MODEL RMOD1 RES (TC1=8E-3 TC2=1.7E-5)
    .MODEL RMOD2 RES (TC1=-2.5e-3 TC2=3.3e-6)
    .ENDS
    *
    *$
    *


*ZETEX ZVP1320F Spice Model v1.0 Last Revised 13/06/02
    *
    .SUBCKT ZVP1320F 3 4 5
    *                D G S
    M1 6 2 8 8 MOSMOD
    M2 6 2 8 8 MOSMODS
    RG 4 2 56
    RIN 2 8 200E6
    RD 3 6 RDSMOD 71
    RS 8 5 RDSMOD 6.6 
    RL 3 5 200E6
    C1 2 8 42E-12
    D1 3 5 DMOD1
    D2 3 17 DMOD2
    Egs1 2 17 2 8 1
    .MODEL MOSMOD PMOS VTO=-2.56 IS=1E-15 KP=.059 CBD=15E-12 PB=1 LAMBDA=4.9E-3
    .MODEL MOSMODS PMOS VTO=-2.2 IS=1E-15 KP=0.002 PB=1
    .MODEL DMOD1 D IS=2E-13 RS=0.12 N=1.01 IKF=3e-3
    .MODEL DMOD2 D CJO=18e-12 IS=1e-30 N=10
    .MODEL RDSMOD RES (TC1=8E-3 TC2=3E-5)
    .ENDS ZVP1320F
    *
    *$
    *


*ZETEX ZVP2110A Spice Model v1.0 Last Revised 23/7/04
    *
    .SUBCKT ZVP2110A 3 4 5
    *                D G S
    M1 13 20 5 5 Pmod1
    RG 4 2 65
    RIN 2 5 1E9
    RL 3 5 1.2E8
    RD 3 13 Rmod1 2.5
    C1 2 5 140E-12
    **C2 3 2 15E-12
    D1 3 5 Dmod1
    D2 3 17 Dmod2
    Egs1 2 17 2 5 1
    Egt1 2 20 5 21 1
    Vgt1 5 22 1
    Igt1 5 21 1
    Rgt 21 22 Rmod2 1
    .MODEL Pmod1 PMOS VTO=-2.8 RS=2 IS=1E-15 KP=0.17
    +CBD=105E-12 PB=1 LAMBDA=6E-3
    .MODEL Dmod1 D IS=5E-12 RS=1
    .MODEL Dmod2 D CJO=60e-12 IS=1e-30 N=10
    .MODEL Rmod1 RES (TC1=8e-3 TC2=4.2E-5)
    .MODEL Rmod2 RES (TC1=-2e-3 TC2=3e-6)
    .ENDS ZVP2110A
    *
    *$
    *


*ZETEX ZVP2110G Spice Model v1.0 Last Revised 22/7/04
    *
    .SUBCKT ZVP2110G 3 4 5
    *                D G S
    M1 13 20 5 5 Pmod1
    RG 4 2 65
    RIN 2 5 1E9
    RL 3 5 1.2E8
    RD 3 13 Rmod1 2.5
    C1 2 5 140E-12
    **C2 3 2 15E-12
    D1 3 5 Dmod1
    D2 3 17 Dmod2
    Egs1 2 17 2 5 1
    Egt1 2 20 5 21 1
    Vgt1 5 22 1
    Igt1 5 21 1
    Rgt 21 22 Rmod2 1
    .MODEL Pmod1 PMOS VTO=-2.8 RS=2 IS=1E-15 KP=0.17
    +CBD=105E-12 PB=1 LAMBDA=6E-3
    .MODEL Dmod1 D IS=5E-12 RS=1
    .MODEL Dmod2 D CJO=60e-12 IS=1e-30 N=10
    .MODEL Rmod1 RES (TC1=8e-3 TC2=4.2E-5)
    .MODEL Rmod2 RES (TC1=-2e-3 TC2=3e-6)
    .ENDS ZVP2110G
    *
    *$
    *


*ZETEX ZVP2120A Spice Model v1.0 Last Revised 10/8/05
    *
    .SUBCKT ZVP2120A 3 4 5
    *                D G S
    M1 13 20 5 5 Pmod1
    RG 4 2 100
    RIN 2 5 1E9
    RL 3 5 1.2E8
    RD 3 13 Rmod1 22
    C1 2 5 55E-12
    **C2 3 2 15E-12
    D1 3 5 Dmod1
    D2 3 17 Dmod2
    Egs1 2 17 2 5 1
    Egt1 2 20 5 21 1
    Vgt1 5 22 1
    Igt1 5 21 1
    Rgt 21 22 Rmod2 1
    .MODEL Pmod1 PMOS VTO=-2.8 RS=2 IS=1E-15 KP=0.17
    +CBD=60E-12 PB=1 LAMBDA=6E-3
    .MODEL Dmod1 D IS=5E-12 RS=2 BV=220
    .MODEL Dmod2 D CJO=70e-12 IS=1e-30 N=10
    .MODEL Rmod1 RES (TC1=4.5e-3 TC2=4E-5)
    .MODEL Rmod2 RES (TC1=-2.5e-3 TC2=3e-6)
    .ENDS ZVP2120A
    *
    *$
    *


*ZETEX ZVP2120G Spice Model v1.0 Last Revised 10/8/05
    *
    .SUBCKT ZVP2120G 3 4 5
    *                D G S
    M1 13 20 5 5 Pmod1
    RG 4 2 100
    RIN 2 5 1E9
    RL 3 5 1.2E8
    RD 3 13 Rmod1 22
    C1 2 5 55E-12
    **C2 3 2 15E-12
    D1 3 5 Dmod1
    D2 3 17 Dmod2
    Egs1 2 17 2 5 1
    Egt1 2 20 5 21 1
    Vgt1 5 22 1
    Igt1 5 21 1
    Rgt 21 22 Rmod2 1
    .MODEL Pmod1 PMOS VTO=-2.8 RS=2 IS=1E-15 KP=0.17
    +CBD=60E-12 PB=1 LAMBDA=6E-3
    .MODEL Dmod1 D IS=5E-12 RS=2 BV=220
    .MODEL Dmod2 D CJO=70e-12 IS=1e-30 N=10
    .MODEL Rmod1 RES (TC1=4.5e-3 TC2=4E-5)
    .MODEL Rmod2 RES (TC1=-2.5e-3 TC2=3e-6)
    .ENDS ZVP2120G
    *
    *$
    *


*ZETEX ZVP3310A Spice Model v1.0 Last Revised 23/7/04
    *
    .SUBCKT ZVP3310A 3 4 5
    *                D G S
    M1 13 20 5 5 Pmod1
    RG 4 2 50
    RIN 2 5 1E9
    RL 3 5 1.2E8
    RD 3 13 Rmod1 5
    C1 2 5 55E-12
    D1 3 5 Dmod1
    D2 3 17 Dmod2
    Egs1 2 17 2 5 1
    Egt1 2 20 5 21 1
    Vgt1 5 22 1
    Igt1 5 21 1
    Rgt 21 22 Rmod2 1
    .MODEL Pmod1 PMOS VTO=-2.1 RS=2 IS=1E-15 KP=0.2
    +CBD=35E-12 PB=1 LAMBDA=6E-3
    .MODEL Dmod1 D IS=5E-12 RS=1
    .MODEL Dmod2 D CJO=20e-12 IS=1e-30 N=10
    .MODEL Rmod1 RES (TC1=9e-3 TC2=4.2E-5)
    .MODEL Rmod2 RES (TC1=-2e-3 TC2=3e-6)
    .ENDS ZVP3310A
    *
    *$
    *


*ZETEX ZVP3310F Spice Model v1.1 Last Revised 22/7/04
    *
    .SUBCKT ZVP3310F 3 4 5
    *                D G S
    M1 13 20 5 5 Pmod1
    RG 4 2 50
    RIN 2 5 1E9
    RL 3 5 1.2E8
    RD 3 13 Rmod1 5
    C1 2 5 55E-12
    D1 3 5 Dmod1
    D2 3 17 Dmod2
    Egs1 2 17 2 5 1
    Egt1 2 20 5 21 1
    Vgt1 5 22 1
    Igt1 5 21 1
    Rgt 21 22 Rmod2 1
    .MODEL Pmod1 PMOS VTO=-2.1 RS=2 IS=1E-15 KP=0.2
    +CBD=35E-12 PB=1 LAMBDA=6E-3
    .MODEL Dmod1 D IS=5E-12 RS=1
    .MODEL Dmod2 D CJO=20e-12 IS=1e-30 N=10
    .MODEL Rmod1 RES (TC1=9e-3 TC2=4.2E-5)
    .MODEL Rmod2 RES (TC1=-2e-3 TC2=3e-6)
    .ENDS ZVP3310F
    *
    *$
    *


*ZETEX ZVP4424A Spice Model v1.1 Last Revised 21/3/01
    *
    .SUBCKT ZVP4424A 3 4 5
    *------connections-------D-G-S
    *
    M1 6 2 8 8 P4424AM
    M2 6 2 8 8 P4424AMS
    RG 4 2 27
    RD 3 6 5.5
    RS 8 5 0.6 
    RL 3 5 240E6
    C1 2 8 120E-12
    C2 2 3  20E-12
    C3 15 14 260E-12 
    C4 16 8 233E-12
    D1 3 5 P4424AD
    S1 2 15 13 14 SMOD1
    S2 13 15 14 13 SMOD1
    S3 16 13 13 8 SMOD2
    S4 16 2 8 13 SMOD2
    Egs2 13 8 2 8 1
    Eds1 14 8 3 8 1
    .MODEL P4424AM PMOS VTO=-1.4 IS=1E-15 KP=0.26 CBD=65.3E-12 PB=1
    .MODEL P4424AMS PMOS VTO=-1.04 IS=1E-15 KP=0.0026 CBD=0.653E-12 PB=1
    .MODEL P4424AD D IS=9.36E-13 RS=.196 N=1.045
    .MODEL SMOD1 VSWITCH RON=.001 ROFF=100  VON=-1.5 VOFF=-1
    .MODEL SMOD2 VSWITCH RON=.001 ROFF=100  VON=0.5 VOFF=2.5
    .ENDS ZVP4424A
    *
    *$
    *


*ZETEX ZVP4424G Spice Model v1.1 Last Revised 21/3/01
    *
    .SUBCKT ZVP4424G 3 4 5
    *------connections-------D-G-S
    *
    M1 6 2 8 8 P4424AM
    M2 6 2 8 8 P4424AMS
    RG 4 2 27
    RD 3 6 5.5
    RS 8 5 0.6 
    RL 3 5 240E6
    C1 2 8 120E-12
    C2 2 3  20E-12
    C3 15 14 260E-12 
    C4 16 8 233E-12
    D1 3 5 P4424AD
    S1 2 15 13 14 SMOD1
    S2 13 15 14 13 SMOD1
    S3 16 13 13 8 SMOD2
    S4 16 2 8 13 SMOD2
    Egs2 13 8 2 8 1
    Eds1 14 8 3 8 1
    .MODEL P4424AM PMOS VTO=-1.4 IS=1E-15 KP=0.26 CBD=65.3E-12 PB=1
    .MODEL P4424AMS PMOS VTO=-1.04 IS=1E-15 KP=0.0026 CBD=0.653E-12 PB=1
    .MODEL P4424AD D IS=9.36E-13 RS=.196 N=1.045
    .MODEL SMOD1 VSWITCH RON=.001 ROFF=100  VON=-1.5 VOFF=-1
    .MODEL SMOD2 VSWITCH RON=.001 ROFF=100  VON=0.5 VOFF=2.5
    .ENDS ZVP4424G
    *
    *$
    *


*
*Zetex ZVP4424Z Spice Model v1.0 Last Revised 17/07/2008
*
.SUBCKT ZVP4424Z 3 4 5
*------connections-------D-G-S
*
M1 6 2 8 8 P4424AM
M2 6 2 8 8 P4424AMS
RG 4 2 27
RD 3 6 5.5
RS 8 5 0.6 
RL 3 5 240E6
D1 3 5 P4424AD
Egs2 13 8 2 8 1
Eds1 14 8 6 8 1
C1 2 8 125E-12
C2 2 3  15E-12
C3 15 14 210E-12 
C4 16 8 220E-12
S1 2 15 14 13 SMOD1
S2 13 15 14 13 SMOD2
S3 16 13 13 8 SMOD3
S4 16 2 13 8 SMOD4
.MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=-1 VOFF=-2
.MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=-2 VOFF=-1
.MODEL SMOD3 VSWITCH RON=.001 ROFF=100  VON=2.5 VOFF=3.5
.MODEL SMOD4 VSWITCH RON=.001 ROFF=100  VON=3.5 VOFF=2.5
.MODEL P4424AM PMOS VTO=-1.4 IS=1E-15 KP=0.26 CBD=65.3E-12 PB=1
.MODEL P4424AMS PMOS VTO=-1.04 IS=1E-15 KP=0.0026 CBD=270E-12 PB=1
.MODEL P4424AD D IS=9.36E-13 RS=.196 N=1.045
.ENDS ZVP4424Z
*
*$
*
*                (c)  2008 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA


*ZETEX ZVP4525E6 Spice Model v1.0 Last Revised 6/01/2005
    *
    .SUBCKT  ZVP4525E6 3 4 5
    *---connections---D-G-S
    M1 6 20 8 8 MOSMOD1
    M2 6 20 8 8 MOSMOD2
    RG 4 2 7
    RIN 2 8 200E6
    RD 3 6 RMOD1 11
    RS 8 5 RMOD1 0.5
    RB 3 7 RMOD1 0.2
    RL 3 5 250E6
    C1 2 8 80E-12
    C2 2 3  12E-12
    C3 15 14 175E-12
    C4 16 8 175E-12
    D1 7 5 DMOD1
    S1 2 15 14 13 SMOD1a
    S2 13 15 14 13 SMOD1b
    S3 16 13 13 8 SMOD2a
    S4 16 2 13 8 SMOD2b
    Egs2 13 8 2 8 1
    Eds1 14 8 3 8 1
    Egt1 2 20 5 21 1
    Vgt1 5 22 1
    Igt1 5 21 1
    Rgt 21 22 RMOD2 1
    .MODEL MOSMOD1 PMOS VTO=-1.5 IS=1E-15 KP=0.15
    .MODEL MOSMOD2 PMOS VTO=-.9 IS=1E-15 KP=0.0015
    .MODEL DMOD1 D IS=4.14E-13 N=1.0078 CJO=100E-12 BV=260
    .MODEL SMOD1a VSWITCH RON=.01 ROFF=1e3  VON=1.7 VOFF=-2.75
    .MODEL SMOD1b VSWITCH RON=.01 ROFF=1e3  VON=-2.75 VOFF=1.7
    .MODEL SMOD2a VSWITCH RON=.01 ROFF=1e3  VON=1.5 VOFF=3.5
    .MODEL SMOD2b VSWITCH RON=.01 ROFF=1e3  VON=3.5 VOFF=1.5
    .MODEL RMOD1 RES (TC1=8e-3 TC2=1.5e-5)
    .MODEL RMOD2 RES (TC1=-1.9e-3 TC2=1e-6)
    .ENDS
    *
    *$
    *


*ZETEX ZVP4525G Spice Model v1.0 Last Revised 6/01/2005
    *
    .SUBCKT  ZVP4525G 3 4 5
    *---connections---D-G-S
    M1 6 20 8 8 MOSMOD1
    M2 6 20 8 8 MOSMOD2
    RG 4 2 7
    RIN 2 8 200E6
    RD 3 6 RMOD1 11
    RS 8 5 RMOD1 0.5
    RB 3 7 RMOD1 0.2
    RL 3 5 250E6
    C1 2 8 80E-12
    C2 2 3  12E-12
    C3 15 14 175E-12
    C4 16 8 175E-12
    D1 7 5 DMOD1
    S1 2 15 14 13 SMOD1a
    S2 13 15 14 13 SMOD1b
    S3 16 13 13 8 SMOD2a
    S4 16 2 13 8 SMOD2b
    Egs2 13 8 2 8 1
    Eds1 14 8 3 8 1
    Egt1 2 20 5 21 1
    Vgt1 5 22 1
    Igt1 5 21 1
    Rgt 21 22 RMOD2 1
    .MODEL MOSMOD1 PMOS VTO=-1.5 IS=1E-15 KP=0.15
    .MODEL MOSMOD2 PMOS VTO=-.9 IS=1E-15 KP=0.0015
    .MODEL DMOD1 D IS=4.14E-13 N=1.0078 CJO=100E-12 BV=260
    .MODEL SMOD1a VSWITCH RON=.01 ROFF=1e3  VON=1.7 VOFF=-2.75
    .MODEL SMOD1b VSWITCH RON=.01 ROFF=1e3  VON=-2.75 VOFF=1.7
    .MODEL SMOD2a VSWITCH RON=.01 ROFF=1e3  VON=1.5 VOFF=3.5
    .MODEL SMOD2b VSWITCH RON=.01 ROFF=1e3  VON=3.5 VOFF=1.5
    .MODEL RMOD1 RES (TC1=8e-3 TC2=1.5e-5)
    .MODEL RMOD2 RES (TC1=-1.9e-3 TC2=1e-6)
    .ENDS
    *
    *$
    *


*ZETEX ZVP4525Z Spice Model v1.0 Last Revised 6/01/2005
    *
    .SUBCKT  ZVP4525Z 3 4 5
    *---connections---D-G-S
    M1 6 20 8 8 MOSMOD1
    M2 6 20 8 8 MOSMOD2
    RG 4 2 7
    RIN 2 8 200E6
    RD 3 6 RMOD1 11
    RS 8 5 RMOD1 0.5
    RB 3 7 RMOD1 0.2
    RL 3 5 250E6
    C1 2 8 80E-12
    C2 2 3  12E-12
    C3 15 14 175E-12
    C4 16 8 175E-12
    D1 7 5 DMOD1
    S1 2 15 14 13 SMOD1a
    S2 13 15 14 13 SMOD1b
    S3 16 13 13 8 SMOD2a
    S4 16 2 13 8 SMOD2b
    Egs2 13 8 2 8 1
    Eds1 14 8 3 8 1
    Egt1 2 20 5 21 1
    Vgt1 5 22 1
    Igt1 5 21 1
    Rgt 21 22 RMOD2 1
    .MODEL MOSMOD1 PMOS VTO=-1.5 IS=1E-15 KP=0.15
    .MODEL MOSMOD2 PMOS VTO=-.9 IS=1E-15 KP=0.0015
    .MODEL DMOD1 D IS=4.14E-13 N=1.0078 CJO=100E-12 BV=260
    .MODEL SMOD1a VSWITCH RON=.01 ROFF=1e3  VON=1.7 VOFF=-2.75
    .MODEL SMOD1b VSWITCH RON=.01 ROFF=1e3  VON=-2.75 VOFF=1.7
    .MODEL SMOD2a VSWITCH RON=.01 ROFF=1e3  VON=1.5 VOFF=3.5
    .MODEL SMOD2b VSWITCH RON=.01 ROFF=1e3  VON=3.5 VOFF=1.5
    .MODEL RMOD1 RES (TC1=8e-3 TC2=1.5e-5)
    .MODEL RMOD2 RES (TC1=-1.9e-3 TC2=1e-6)
    .ENDS
    *
    *$
    *


*ZETEX ZXMP2120FF Spice Model v1.0 Last Revised 09/02/07
    *
    .SUBCKT ZXMP2120FF 3 4 5
    *                D G S
    M1 13 20 5 5 Pmod1
    RG 4 2 100
    RIN 2 5 1E9
    RL 3 5 1.2E8
    RD 3 13 Rmod1 22
    C1 2 5 55E-12
    D1 3 5 Dmod1
    D2 3 17 Dmod2
    Egs1 2 17 2 5 1
    Egt1 2 20 5 21 1
    Vgt1 5 22 1
    Igt1 5 21 1
    Rgt 21 22 Rmod2 1
    .MODEL Pmod1 PMOS VTO=-2.8 RS=2 IS=1E-15 KP=0.17
    +CBD=60E-12 PB=1 LAMBDA=6E-3
    .MODEL Dmod1 D IS=5E-12 RS=2 BV=220
    .MODEL Dmod2 D CJO=70e-12 IS=1e-30 N=10
    .MODEL Rmod1 RES (TC1=4.5e-3 TC2=4E-5)
    .MODEL Rmod2 RES (TC1=-2.5e-3 TC2=3e-6)
    .ENDS ZXMP2120FF
    *
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=10FEB2011
*VERSION=1
*PIN_ORDER D G S
*
.SUBCKT ZXMP2120G4 3 4 5
M1 13 20 5 5 Pmod1
RG 4 2 100
RIN 2 5 1E9
RL 3 5 1.2E8
RD 3 13 Rmod1 22
C1 2 5 55E-12
D1 3 5 Dmod1
D2 3 17 Dmod2
Egs1 2 17 2 5 1
Egt1 2 20 5 21 1
Vgt1 5 22 1
Igt1 5 21 1
Rgt 21 22 Rmod2 1
.MODEL Pmod1 PMOS VTO=-2.8 RS=2 IS=1E-15 KP=0.17
+ CBD=60E-12 PB=1 LAMBDA=6E-3
.MODEL Dmod1 D IS=5E-12 RS=2 BV=220
.MODEL Dmod2 D CJO=70e-12 IS=1e-30 N=10
.MODEL Rmod1 RES (TC1=4.5e-3 TC2=4E-5)
.MODEL Rmod2 RES (TC1=-2.5e-3 TC2=3e-6)
.ENDS
*
*$


*---------- DMP10H400SK3 Spice Model ----------
.SUBCKT DMP10H400SK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.1739 
RS 30 3 0.001 
RG 20 2 12.5 
CGS 2 3 1.213E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 4E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 
+ TOX = 6E-008 NSUB = 1E+016 KP = 12.42 KAPPA = 61.41 VTO = -2.193 
.MODEL DCGD D CJO = 9.262E-011 VJ = 0.7916 M = 0.3376 
.MODEL DSUB D IS = 3.112E-009 N = 1.487 RS = 0.008305 BV = 150 
+ CJO = 1.637E-010 VJ = 0.753 M = 0.6004 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP10H400SK3 Spice Model v1.0 Last Revised 2014/02/21


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=17/12/2014
*VERSION=1



.SUBCKT ZXMP10A13F 10 20 30
M1 1 2 3 3  Pmod1
RD 10 1 Rmod1 300E-3
RS 23 3 Rmod1 600E-3
RG 20 22 10
RIN 20 23 2E11
RDS 10 23 2E9
CGS 2 3 13E-12 
EGD 12 0 1 2 1
REGD 12 0 1
VFB 14 0 0 
FFB 1 2 VFB 1 
CGD 13 14 8E-12 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 10 23 DSUB
EL 2 22 1 3 .009
RL 30 23 3
LS  30 23 2E-9
.MODEL Pmod1 PMOS (LEVEL=3 VTO=-4 TOX=10.4E-8 NSUB=3.5E+14 KP=38 NFS=13.7E+11 IS=1E-15 N=10)
.MODEL DCGD D (CJO = 8E-12  VJ = 0.45  M = 0.33 T_ABS=25)
.MODEL DSUB D (IS=.29E-12 N=1.01 RS=0.05 BV=105 CJO=20E-12 VJ=0.45 M=0.33 TT=14E-9 TRS1=2m IKF=.5)
.MODEL DLIM D (IS=100U N=1 T_ABS=25)
.MODEL Rmod1 RES (TC1=1.2e-3 TC2=1E-6)
.ENDS
.SIMULATOR DEFAULT


*                     (c)  2014 Diodes Inc
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*




*ZETEX ZXMP10A16K Spice Model v1.0 Last Revised 21/11/07
    *
    .SUBCKT ZXMP10A16K 30 40 50
    *                D G S
    M1 6 2 5 5 Pmod L=1.35E-6 W=1.68
    M2 5 2 5 6 Nmod L=1.4E-6 W=1.15
    RG 4 2 4.7
    RIN 2 5 1E9
    RD 3 6 Rdmod 0.1
    RL 3 5 3E9
    C1 2 5 50E-12
    C2 3 4 1E-12
    D1 3 5  Dbodymod
    LD 3 30 1.3E-9
    LG 4 40 2.4E-9
    LS 5 50 2.4E-9
    .MODEL Pmod PMOS (LEVEL=3 TOX=11E-8 NSUB=0.3e16
    +VTO=-3.2 KP=5.2e-6 RS=0.035 NFS=7.5E11 KAPPA=0.05 IS=1E-15 N=10)
    .MODEL Nmod NMOS (LEVEL=3 TOX=11E-8 NSUB=3.6E15
    +TPG=-1 IS=1E-15 N=10)
    .MODEL Dbodymod D (IS=1e-12 RS=0.027 CJO=125E-12 TT=66E-9 BV=105)
    .MODEL Rdmod RES (TC1=9e-3 TC2=1e-5)
    .ENDS ZXMP10A16K
    *
    *$
    *


*
*Zetex ZXMP10A17E6 Spice model v1.0 Last revision 06/08/08
*
.SUBCKT ZXMP10A17E6 30 40 50
*                                  D G S
M1 6 2 5 5 Pmod L=1.35E-6 W=1.082
M2 5 2 5 6 Nmod L=1.8E-6 W=0.6
RG 4 2 4.2
RIN 2 5 1E9
RD 3 6 Rdmod 0.185
RL 3 5 7E9
D1 3 5  Dbodymod
LD 3 30 0.3E-9
LG 4 40 1.9E-9
LS 5 50 1.9E-9
.MODEL Pmod PMOS (LEVEL=3 TOX=9.5E-8 NSUB=5E15
+ VTO=-3.7 KP=0.6E-5 RS=0.05 NFS=0.8E12 KAPPA=0.03 UO=650 IS=1E-15 N=10)
.MODEL Nmod NMOS (LEVEL=3 TOX=9.5E-8 NSUB=2.5E15 TPG=-1 IS=1E-15 N=10)
.MODEL Dbodymod D (IS=7.5E-13 RS=.06 TRS1=1.5e-3 CJO=120e-12 M=0.43 VJ=0.41 TT=5.2e-8  BV=110)
.MODEL Rdmod RES (TC1=7.8e-3 TC2=1.4E-5)
.ENDS   ZXMP10A17E6
*
*$
*
*                (c)  2008 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=17SEP2010
*VERSION=1
*------connections------- D, G, S
.SUBCKT ZXMP10A17G 30 40 50
M1 6 2 5 5 Pmod L=1.35E-6 W=1.082
M2 5 2 5 6 Nmod L=1.8E-6 W=0.6
RG 4 2 4.2
RIN 2 5 1E9
RD 3 6 Rdmod 0.185
RL 3 5 7E9
D1 3 5  Dbodymod
LD 3 30 0.3E-9
LG 4 40 1.9E-9
LS 5 50 1.9E-9
.MODEL Pmod PMOS (LEVEL=3 TOX=9.5E-8 NSUB=5E15
+ VTO=-3.7 KP=0.6E-5 RS=0.05 NFS=0.8E12 KAPPA=0.03 UO=650 IS=1E-15 N=10)
.MODEL Nmod NMOS (LEVEL=3 TOX=9.5E-8 NSUB=2.5E15 TPG=-1 IS=1E-15 N=10)
.MODEL Dbodymod D (IS=7.5E-13 RS=.06 TRS1=1.5e-3 CJO=120e-12 M=0.43 VJ=0.41
+ TT=5.2e-8  BV=110)
.MODEL Rdmod RES (TC1=7.8e-3 TC2=1.4E-5)
.ENDS   ZXMP10A17G
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=17SEP2010
*VERSION=1
*------connections------- D, G, S
.SUBCKT ZXMP10A17K 30 40 50
M1 6 2 5 5 Pmod L=1.35E-6 W=1.082
M2 5 2 5 6 Nmod L=1.8E-6 W=0.6
RG 4 2 4.2
RIN 2 5 1E9
RD 3 6 Rdmod 0.185
RL 3 5 7E9
D1 3 5  Dbodymod
LD 3 30 0.3E-9
LG 4 40 1.9E-9
LS 5 50 1.9E-9
.MODEL Pmod PMOS (LEVEL=3 TOX=9.5E-8 NSUB=5E15
+ VTO=-3.7 KP=0.6E-5 RS=0.05 NFS=0.8E12 KAPPA=0.03 UO=650 IS=1E-15 N=10)
.MODEL Nmod NMOS (LEVEL=3 TOX=9.5E-8 NSUB=2.5E15 TPG=-1 IS=1E-15 N=10)
.MODEL Dbodymod D (IS=7.5E-13 RS=.06 TRS1=1.5e-3 CJO=120e-12 M=0.43 VJ=0.41
+ TT=5.2e-8  BV=110)
.MODEL Rdmod RES (TC1=7.8e-3 TC2=1.4E-5)
.ENDS   ZXMP10A17K
*
*$


*ZETEX ZXMP10A18G Spice Model v1.0 Last Revised 22/11/07
    *
    .SUBCKT ZXMP10A18G 30 40 50
    *                D G S
    M1 6 2 5 5 Pmod L=1.3E-6 W=2.64
    M2 5 2 5 6 Nmod L=1.4E-6 W=2.0
    RG 4 2 4.5
    RIN 2 5 1E9
    RD 3 6 Rdmod 0.55
    RL 3 5 3E9
    C1 2 5 50E-12
    C2 3 4 1E-12
    D1 3 5  Dbodymod
    LD 3 30 1E-9
    LG 4 40 2.3E-9
    LS 5 50 2.3E-9
    .MODEL Pmod PMOS (LEVEL=3 TOX=11E-8 NSUB=1.2e16
    +VTO=-3.54 KP=8e-6 RS=0.0182 NFS=11E11 KAPPA=0.05 IS=1E-15 N=10)
    .MODEL Nmod NMOS (LEVEL=3 TOX=11E-8 NSUB=3.6E15
    +TPG=-1 IS=1E-15 N=10)
    .MODEL Dbodymod D (IS=1.3e-12 RS=0.025 CJO=25E-12 TT=65E-9 BV=105)
    .MODEL Rdmod RES (TC1=6e-3 TC2=1e-5)
    .ENDS ZXMP10A18G
    *
    *$
    *


*ZETEX ZXMP10A18K Spice Model v1.0 Last Revised 22/11/07
    *
    .SUBCKT ZXMP10A18K 30 40 50
    *                D G S
    M1 6 2 5 5 Pmod L=1.3E-6 W=2.64
    M2 5 2 5 6 Nmod L=1.4E-6 W=2.0
    RG 4 2 4.5
    RIN 2 5 1E9
    RD 3 6 Rdmod 0.55
    RL 3 5 3E9
    C1 2 5 50E-12
    C2 3 4 1E-12
    D1 3 5  Dbodymod
    LD 3 30 1.3E-9
    LG 4 40 2.4E-9
    LS 5 50 2.4E-9
    .MODEL Pmod PMOS (LEVEL=3 TOX=11E-8 NSUB=1.2e16
    +VTO=-3.54 KP=8e-6 RS=0.0182 NFS=11E11 KAPPA=0.05 IS=1E-15 N=10)
    .MODEL Nmod NMOS (LEVEL=3 TOX=11E-8 NSUB=3.6E15
    +TPG=-1 IS=1E-15 N=10)
    .MODEL Dbodymod D (IS=1.3e-12 RS=0.025 CJO=25E-12 TT=65E-9 BV=105)
    .MODEL Rdmod RES (TC1=6e-3 TC2=1e-5)
    .ENDS ZXMP10A18K
    *
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=10FEB2011
*VERSION=1
*PIN_ORDER D G S
*
.SUBCKT ZXMP2120E5 3 4 5
M1 13 20 5 5 Pmod1
RG 4 2 100
RIN 2 5 1E9
RL 3 5 1.2E8
RD 3 13 Rmod1 22
C1 2 5 55E-12
D1 3 5 Dmod1
D2 3 17 Dmod2
Egs1 2 17 2 5 1
Egt1 2 20 5 21 1
Vgt1 5 22 1
Igt1 5 21 1
Rgt 21 22 Rmod2 1
.MODEL Pmod1 PMOS VTO=-2.8 RS=2 IS=1E-15 KP=0.17
+ CBD=60E-12 PB=1 LAMBDA=6E-3
.MODEL Dmod1 D IS=5E-12 RS=2 BV=220
.MODEL Dmod2 D CJO=70e-12 IS=1e-30 N=10
.MODEL Rmod1 RES (TC1=4.5e-3 TC2=4E-5)
.MODEL Rmod2 RES (TC1=-2.5e-3 TC2=3e-6)
.ENDS
*
*$


*---------- DMP10H400SEQ Spice Model ----------
.SUBCKT DMP10H400SEQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.1739 
RS 30 3 0.001 
RG 20 2 12.5 
CGS 2 3 1.213E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 4E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 
+ TOX = 6E-008 NSUB = 1E+016 KP = 12.42 KAPPA = 61.41 VTO = -2.193 
.MODEL DCGD D CJO = 9.262E-011 VJ = 0.7916 M = 0.3376 
.MODEL DSUB D IS = 3.112E-009 N = 1.487 RS = 0.008305 BV = 150 
+ CJO = 1.637E-010 VJ = 0.753 M = 0.6004 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP10H400SEQ Spice Model v1.0 Last Revised 2014/02/21


*---------- DMP10H4D2S Spice Model ----------
.SUBCKT DMP10H4D2S 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 2.621 
RS 30 3 0.001 
RG 20 2 15.36 
CGS 2 3 8.825E-011 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 8.2E-011 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.8788 KAPPA = 19.32 VTO = -2.563 
.MODEL DCGD D CJO = 1.018E-011 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.256E-010 N = 1.508 RS = 0.08444 BV = 100 CJO = 9.972E-012 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP10H4D2S Spice Model v1.0 Last Revised 2015/10/1


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=17SEP2010
*VERSION=1
*------connections------- D, G, S
.SUBCKT ZXMP10A17GQ 30 40 50
M1 6 2 5 5 Pmod L=1.35E-6 W=1.082
M2 5 2 5 6 Nmod L=1.8E-6 W=0.6
RG 4 2 4.2
RIN 2 5 1E9
RD 3 6 Rdmod 0.185
RL 3 5 7E9
D1 3 5  Dbodymod
LD 3 30 0.3E-9
LG 4 40 1.9E-9
LS 5 50 1.9E-9
.MODEL Pmod PMOS (LEVEL=3 TOX=9.5E-8 NSUB=5E15
+ VTO=-3.7 KP=0.6E-5 RS=0.05 NFS=0.8E12 KAPPA=0.03 UO=650 IS=1E-15 N=10)
.MODEL Nmod NMOS (LEVEL=3 TOX=9.5E-8 NSUB=2.5E15 TPG=-1 IS=1E-15 N=10)
.MODEL Dbodymod D (IS=7.5E-13 RS=.06 TRS1=1.5e-3 CJO=120e-12 M=0.43 VJ=0.41
+ TT=5.2e-8  BV=110)
.MODEL Rdmod RES (TC1=7.8e-3 TC2=1.4E-5)
.ENDS   ZXMP10A17GQ
*
*$


*ZETEX ZXM64P03X Spice Model v1.1 Last Revised 11/7/05
    *
    .SUBCKT ZXM64P03X 3 4 5
    *----connections----D G S
    *
    M1 6 2 8 8 MOSMOD
    M2 6 2 8 8 MOSMODS
    RG 41 2 9
    RIN 2 8 200E6
    RD 31 6 RDSMOD 0.02
    RS 8 51 RDSMOD 0.015 
    RL 3 5 35E6
    C1 2 8 810E-12
    C3 15 14 1050E-12 
    C4 16 8 1150E-12
    D1 3 5 DMOD1
    D2 3 17 DMOD2
    S1 2 15 13 14 SMOD1a
    S2 13 15 13 14 SMOD1b
    S3 16 13 8 13 SMOD2a
    S4 16 2 8 13 SMOD2b
    Egs1 2 17 2 8 1
    Egs2 13 8 2 8 1
    Eds1 14 8 3 8 1
    LD 3 31 1E-9
    LG 4 41 1E-9
    LS 5 51 1E-9
    .MODEL MOSMOD PMOS VTO=-2.4 IS=1E-15 KP=8 CBD=512E-12 PB=1 LAMBDA=4.9E-3
    .MODEL MOSMODS PMOS VTO=-2 IS=1E-15 KP=0.1 PB=1
    .MODEL DMOD1 D IS=6E-13 RS=0.02 N=1.01 TT=1e-8
    .MODEL DMOD2 D CJO=430e-12 IS=1e-30 N=10
    .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4  VON=-1.75 VOFF=2.75
    .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4  VON=2.75 VOFF=-1.75
    .MODEL SMOD2a VSWITCH RON=1e-2 ROFF=1e4  VON=-1.5 VOFF=-3.5
    .MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4  VON=-3.5 VOFF=-1.5
    .MODEL RDSMOD RES (TC1=3E-3 TC2=1.5E-5)
    .ENDS ZXM64P03X
    *
    *$
    *


*ZETEX ZXMD63P03X Spice Model v1.0 Last Revised 18/8/00
    *
    .SUBCKT ZXMD63P03X 3 4 5
    *               D G S
    M1 3 2 5 5 M63P03
    RG 4 2 18
    RL 3 5 1E9
    C1 2 5 450E-12
    C2 3 2 35E-12
    D1 3 5 D63P03
    *
    .MODEL M63P03 PMOS VTO=-2.32 RS=0.09 RD=0.045 KP=4.2
    +CBD=480E-12 LAMBDA=4.9E-3
    .MODEL D63P03 D IS=4E-13 N=1.04 IKF=295E-3 RS=94E-3
    .ENDS ZXMD63P03X
    *
    *$
    *


*ZETEX ZXMP3A13F Spice Model v2.0 Last Revised 21/2/05
    *
    .SUBCKT ZXMP3A13F 30 40 50
    *                D G S
    M1 6 2 5 5 Pmod L=1.2E-6 W=0.33
    M2 5 2 5 6 Nmod L=1.4E-6 W=0.19
    RG 4 2 10
    RIN 2 5 1E9
    RD 3 6 Rdmod 0.05
    RL 3 5 3E9
    C1 2 5 8.5E-12
    C2 3 4 5E-12
    D1 3 5  Dbodymod
    LD 3 30 0.5E-9
    LG 4 40 1.0E-9
    LS 5 50 1.0E-9
    .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E17 
    +VTO=-1.9 KP=2E-5 RS=.05 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10)
    .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=2E16 
    +TPG=-1 IS=1E-15 N=10)
    .MODEL Dbodymod D (IS=6E-13 RS=.025 IKF=0.1 TRS1=1.5e-3
    +CJO=65e-12  BV=33)
    .MODEL Rdmod RES (TC1=5.5e-3 TC2=1.5E-5)
    .ENDS   ZXMP3A13F
    *
    *$
    *


*ZETEX ZXMP3A16DN8 Spice Model v2.0 Last Revised 21/2/05
    *
    .SUBCKT ZXMP3A16DN8 30 40 50
    *                D G S
    M1 6 2 5 5 Pmod L=1.2E-6 W=1.67 
    M2 5 2 5 6 Nmod L=1.4E-6 W=0.96 
    RG 4 2 6
    RIN 2 5 1E9
    RD 3 6 Rdmod 0.015
    RL 3 5 3E9
    C1 2 5 40E-12
    C2 3 4 25E-12
    D1 3 5  Dbodymod
    LD 3 30 1.5E-9
    LG 4 40 1.2E-9
    LS 5 50 1.2E-9
    .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E17
    +VTO=-1.48 KP=1.6E-5 RS=.022 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10)
    .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=2E16
    +TPG=-1 IS=1E-15 N=10)
    .MODEL Dbodymod D (IS=8E-13 RS=.022 IKF=0.1 TRS1=1.5e-3
    +CJO=50e-12  BV=33)
    .MODEL Rdmod RES (TC1=5.5e-3 TC2=1.5E-5)
    .ENDS   ZXMP3A16DN8
    *
    *$
    *


*ZETEX ZXMP3A16G Spice Model v2.0 Last Revised 21/2/05
    *
    .SUBCKT ZXMP3A16G 30 40 50
    *                D G S
    M1 6 2 5 5 Pmod L=1.2E-6 W=1.67 
    M2 5 2 5 6 Nmod L=1.4E-6 W=0.96
    RG 4 2 6
    RIN 2 5 1E9
    RD 3 6 Rdmod 0.015
    RL 3 5 3E9
    C1 2 5 40E-12
    C2 3 4 25E-12
    D1 3 5  Dbodymod
    LD 3 30 1E-9
    LG 4 40 2.3E-9
    LS 5 50 2.3E-9
    .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E17
    +VTO=-1.48 KP=1.6E-5 RS=.022 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10)
    .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=2E16 
    +TPG=-1 IS=1E-15 N=10)
    .MODEL Dbodymod D (IS=8E-13 RS=.022 IKF=0.1 TRS1=1.5e-3
    +CJO=50e-12  BV=33)
    .MODEL Rdmod RES (TC1=5.5e-3 TC2=1.5E-5)
    .ENDS   ZXMP3A16G
    *
    *$
    *


*ZETEX ZXMP3A17DN8 Spice Model v2.0 Last Revised 21/2/05
    *
    .SUBCKT ZXMP3A17DN8 30 40 50
    *                D G S
    M1 6 2 5 5 Pmod L=1.2E-6 W=1 
    M2 5 2 5 6 Nmod L=1.4E-6 W=0.57
    RG 4 2 7
    RIN 2 5 1E9
    RD 3 6 Rdmod 0.017
    RL 3 5 3E9
    C1 2 5 25E-12
    C2 3 4 15E-12
    D1 3 5  Dbodymod
    LD 3 30 1.5E-9
    LG 4 40 1.2E-9
    LS 5 50 1.2E-9
    .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E17
    +VTO=-1.75 KP=.9E-5 RS=.025 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10)
    .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=2E16 
    +TPG=-1 IS=1E-15 N=10)
    .MODEL Dbodymod D (IS=0.8E-12 RS=.015 IKF=0.1 TRS1=1.5e-3
    +CJO=65e-12  BV=33)
    .MODEL Rdmod RES (TC1=5.5e-3 TC2=1.5E-5)
    .ENDS   ZXMP3A17DN8
    *
    *$
    *


*ZETEX ZXMP3A17E6 Spice Model v2.0 Last Revised 21/2/05
    *
    .SUBCKT ZXMP3A17E6 30 40 50
    *                D G S
    M1 6 2 5 5 Pmod L=1.2E-6 W=1 
    M2 5 2 5 6 Nmod L=1.4E-6 W=0.57 
    RG 4 2 7
    RIN 2 5 1E9
    RD 3 6 Rdmod 0.017
    RL 3 5 3E9
    C1 2 5 25E-12
    C2 3 4 15E-12
    D1 3 5  Dbodymod
    LD 3 30 0.3E-9
    LG 4 40 1.9E-9
    LS 5 50 1.9E-9
    .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E17
    +VTO=-1.75 KP=.9E-5 RS=.025 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10)
    .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=2E16
    +TPG=-1 IS=1E-15 N=10)
    .MODEL Dbodymod D (IS=0.8E-12 RS=.015 IKF=0.1 TRS1=1.5e-3
    +CJO=65e-12  BV=33)
    .MODEL Rdmod RES (TC1=5.5e-3 TC2=1.5E-5)
    .ENDS   ZXMP3A17E6
    *
    *$
    *


*---------- DMP3015LSS Spice Model ----------
.SUBCKT DMP3015LSS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.005144 
RS 30 3 0.001 
RG 20 2 2 
CGS 2 3 2.486E-009 
EGD 12 0 1 2 1 
VFB 14 0 0 
FFB 1 2  VFB 1 
CGD 13 14 2.95E-009 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 610.4  VMAX = 1E+006  KP = 57.85  ETA = 0.01628 
+ TOX = 6E-008  NSUB = 1E+017  KAPPA = 20.51  VTO = -2.177 
.MODEL DCGD D  CJO = 1.305E-009  VJ = 0.3167  M = 0.312 
.MODEL DSUB D  IS = 2.366E-010  N = 1.216  RS = 0.002639  BV = 35  CJO = 8.298E-011  VJ = 0.6  M = 0.0929 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMP3015LSS Spice Model v1.2 Last Revised 2011/4/22


*---------- DMP3020LSS Spice Model ----------
.SUBCKT DMP3020LSS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.008417 
RS 30 3 0.001 
RG 20 2 6.37 
CGS 2 3 2.09E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 2.2E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 38.15 KAPPA = 19.32 VTO = -2.025 
.MODEL DCGD D CJO = 1E-009 VJ = 0.8  M = 0.6 
.MODEL DSUB D IS = 2.251E-010 N = 1.261 RS = 0.007736 BV = 33 CJO = 1.038E-010 VJ = 0.8 M = 0.6  
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP3020LSS Spice Model v1.0M Last Revised 2018/1/25


*---------- DMP3030SN Spice Model ----------
.SUBCKT DMP3030SN 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.1167 
RS 30 3 0.001 
RG 20 2 51 
CGS 2 3 1.103E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 3E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 1.68 KAPPA = 13.91 VTO = -2.049 
.MODEL DCGD D CJO = 2.109E-010 VJ = 0.6052 M = 0.5407 
.MODEL DSUB D IS = 2.361E-010 N = 1.408 RS = 0.01768 
+ BV = 50 CJO = 1.912E-010 VJ = 0.6317 M = 0.3668 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP3030SN Spice Model v2.0 Last Revised 2013/11/0


*SRC=DMP3035LSS;DI_DMP3035LSS;MOSFETs P;Enh;30.0V 12.0A 35.0mohms  Diodes Inc MOSFET
*SYM=POWMOSP
.SUBCKT DI_DMP3035LSS   10 20 30
*     TERMINALS:  D  G  S
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  15.6m
RS  40  3  1.87m
RG  20  2  76.7
CGS  2  3  179p
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  347p
R1  13  0  1.00
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1.00
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.50n
.MODEL DMOS PMOS(LEVEL=3 VMAX=62.5k THETA=80.0m
+ ETA=450u VTO=-2.00 KP=23.3
.MODEL DCGD D (CJO=347p VJ=0.600 M=0.680
.MODEL DSUB D (IS=49.8n N=1.50 RS=29.2m BV=30.0
+ CJO=92.5p VJ=0.800 M=0.420 TT=196n
.MODEL DLIM D (IS=100U)
.ENDS


*---------- DMP3056LDM Spice Model ----------

.SUBCKT DMP3056LDM 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.02496 
RS 30 3 0.001 
RG 20 2 11.1 
CGS 2 3 8.938E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 8.92E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 2.425E+005 KP = 27.53 ETA = 0.0001 
+ TOX = 6E-008 NSUB = 1E+017 KAPPA = 2.932 VTO = -1.9 
.MODEL DCGD D CJO = 4.013E-010 VJ = 0.3844 M = 0.3457 
.MODEL DSUB D IS = 2.245E-010 N = 1.343 RS = 0.01819 
+ BV = 35 CJO = 7.964E-011 VJ = 3.068 M = 0.9583 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP3056LDM Spice Model v2.0 Last Revised 2012/8/06


*---------- DMP3056LSD Spice Model ----------

.SUBCKT DMP3056LSD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.02496 
RS 30 3 0.001 
RG 20 2 11.1 
CGS 2 3 8.938E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 8.92E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 2.425E+005 KP = 27.53 ETA = 0.0001 
+ TOX = 6E-008 NSUB = 1E+017 KAPPA = 2.932 VTO = -1.9 
.MODEL DCGD D CJO = 4.013E-010 VJ = 0.3844 M = 0.3457 
.MODEL DSUB D IS = 2.245E-010 N = 1.343 RS = 0.01819 
+ BV = 35 CJO = 7.964E-011 VJ = 3.068 M = 0.9583 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMC3036LSD Spice Model v2.0 Last Revised 2012/8/06


*---------- DMP3056LSS Spice Model ----------

.SUBCKT DMP3056LSS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.02496 
RS 30 3 0.001 
RG 20 2 11.1 
CGS 2 3 8.938E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 8.92E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 2.425E+005 KP = 27.53 ETA = 0.0001 
+ TOX = 6E-008 NSUB = 1E+017 KAPPA = 2.932 VTO = -1.9 
.MODEL DCGD D CJO = 4.013E-010 VJ = 0.3844 M = 0.3457 
.MODEL DSUB D IS = 2.245E-010 N = 1.343 RS = 0.01819 
+ BV = 35 CJO = 7.964E-011 VJ = 3.068 M = 0.9583 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP3056LSS Spice Model v2.0 Last Revised 2012/8/06


*DIODES_INC_SPICE_MODEL DMP3098L 
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=11Dec2012
*VERSION=1



.SUBCKT DMP3098L   10 20 30
M1 1 2 3 3  Pmod1
RD 10 1 Rmod1 27E-3
RS 23 3 Rmod1 27E-3
RG 20 22 5
RIN 20 23 2E11
RDS 10 23 2E9
CGS 2 3 100E-12 
EGD 12 0 1 2 1
REGD 12 0 1
VFB 14 0 0 
FFB 1 2 VFB 1 
CGD 13 14 400E-12 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 10 23 DSUB
EL 2 22 1 3 .003
RL 30 23 3
LS  30 23 2E-9
.MODEL Pmod1 PMOS (LEVEL=3 VTO=-2.1 TOX=6E-8 NSUB=5E+16 KP=9 NFS=1E11 IS=1E-15 N=10)
.MODEL DCGD D (CJO = 350E-12  VJ = 0.45  M = 0.33)
.MODEL DSUB D (IS=2.5E-13 N=1 RS=0.018 BV=33 CJO=94E-12 VJ=0.45 M=0.33 TT=3E-9)
.MODEL DLIM D (IS=100U N=1)
.MODEL Rmod1 RES (TC1=.5e-3 TC2=3E-6)
.ENDS


*DIODES_INC_SPICE_MODEL DMP3098LDM 
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=11Dec2012
*VERSION=1



.SUBCKT DMP3098LDM   10 20 30
M1 1 2 3 3  Pmod1
RD 10 1 Rmod1 26E-3
RS 23 3 Rmod1 26E-3
RG 20 22 5
RIN 20 23 2E11
RDS 10 23 2E9
CGS 2 3 100E-12 
EGD 12 0 1 2 1
REGD 12 0 1
VFB 14 0 0 
FFB 1 2 VFB 1 
CGD 13 14 400E-12 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 10 23 DSUB
EL 2 22 1 3 .003
RL 30 23 3
LS  30 23 2E-9
.MODEL Pmod1 PMOS (LEVEL=3 VTO=-2.1 TOX=6E-8 NSUB=5E+16 KP=9 NFS=1E11 IS=1E-15 N=10)
.MODEL DCGD D (CJO = 350E-12  VJ = 0.45  M = 0.33)
.MODEL DSUB D (IS=2.5E-13 N=1 RS=0.018 BV=33 CJO=94E-12 VJ=0.45 M=0.33 TT=3E-9)
.MODEL DLIM D (IS=100U N=1)
.MODEL Rmod1 RES (TC1=.5e-3 TC2=3E-6)
.ENDS


*DIODES_INC_SPICE_MODEL DMP3098LSD 
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=11Dec2012
*VERSION=1


.SUBCKT DMP3098LSD   10 20 30
M1 1 2 3 3  Pmod1
RD 10 1 Rmod1 26E-3
RS 23 3 Rmod1 26E-3
RG 20 22 5
RIN 20 23 2E11
RDS 10 23 2E9
CGS 2 3 100E-12 
EGD 12 0 1 2 1
REGD 12 0 1
VFB 14 0 0 
FFB 1 2 VFB 1 
CGD 13 14 400E-12 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 10 23 DSUB
EL 2 22 1 3 .003
RL 30 23 3
LS  30 23 2E-9
.MODEL Pmod1 PMOS (LEVEL=3 VTO=-2.1 TOX=6E-8 NSUB=5E+16 KP=9 NFS=1E11 IS=1E-15 N=10)
.MODEL DCGD D (CJO = 350E-12  VJ = 0.45  M = 0.33)
.MODEL DSUB D (IS=2.5E-13 N=1 RS=0.018 BV=33 CJO=94E-12 VJ=0.45 M=0.33 TT=3E-9)
.MODEL DLIM D (IS=100U N=1)
.MODEL Rmod1 RES (TC1=.5e-3 TC2=3E-6)
.ENDS


*---------- DMP3160L Spice Model ----------
.SUBCKT DMP3160L 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.04307 
RS 30 3 0.001 
RG 20 2 17.1 
CGS 2 3 3.339E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 3.9E-010 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1E+006  ETA = 0.001 
+ TOX = 6E-008  NSUB = 1E+016  KP = 8.459  KAPPA = 9.123  VTO = -1.527 
.MODEL DCGD D  CJO = 1.701E-010  VJ = 0.4656  M = 0.372 
.MODEL DSUB D  IS = 5E-010  N = 1.421  RS = 0.05533  BV = 33  CJO = 2.821E-011  VJ = 0.5166  M = 0.4868 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMP3160L Spice Model v1.0 Last Revised 2011/10/28


*ZETEX ZXM61P03F Spice Model v1.0 Last Revised 23/2/04
    *
    .SUBCKT ZXM61P03F 3 4 5
    *----connections----D G S
    *
    M1 6 20 8 8 MOSMOD
    M2 6 20 8 8 MOSMODS
    RG 4 2 8
    RIN 2 8 200E6
    RD 3 6 RDSMOD 0.12
    RS 8 5 RDSMOD 0.09 
    RL 3 5 35E6
    C1 2 8 162E-12
    C3 15 14 210E-12 
    C4 16 8 230E-12
    D1 3 5 DMOD1
    D2 3 17 DMOD2
    S1 2 15 13 14 SMOD1a
    S2 13 15 13 14 SMOD1b
    S3 16 13 8 13 SMOD2a
    S4 16 2 8 13 SMOD2b
    Egs1 2 17 2 8 1
    Egs2 13 8 2 8 1
    Eds1 14 8 3 8 1
    Egt1 2 20 21 8 1
    Vgt1 8 22 1
    Igt1 8 21 1
    Rgt 21 22 RMOD2 1
    .MODEL MOSMOD PMOS VTO=-2.1 IS=1E-15 KP=1.4 CBD=102E-12 PB=1 LAMBDA=4.9E-3
    .MODEL MOSMODS PMOS VTO=-1.7 IS=1E-15 KP=0.018 PB=1
    .MODEL DMOD1 D IS=6E-13 RS=0.1 N=1.01 BV=36 TT=1e-8
    .MODEL DMOD2 D CJO=86e-12 IS=1e-30 N=10
    .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4  VON=-1.75 VOFF=2.75
    .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4  VON=2.75 VOFF=-1.75
    .MODEL SMOD2a VSWITCH RON=1e-2 ROFF=1e4  VON=-1.5 VOFF=-3.5
    .MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4  VON=-3.5 VOFF=-1.5
    .MODEL RDSMOD RES (TC1=3E-3 TC2=1.5E-5)
    .MODEL RMOD2 RES (TC1=2.2E-3 TC2=3E-6)
    .ENDS ZXM61P03F
    *
    *$
    *


*---------- DMP3130L Spice Model ----------
.SUBCKT DMP3130L 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.04181 
RS 30 3 0.001 
RG 20 2 12.29 
CGS 2 3 3.719E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 1.46E-009 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1E+006  ETA = 0.001 
+ TOX = 6E-008  NSUB = 1E+016  KP = 9.397  KAPPA = 9.681  VTO = -1.023 
.MODEL DCGD D  CJO = 3.903E-010  VJ = 0.2566  M = 0.45 
.MODEL DSUB D  IS = 2.936E-009  N = 1.327  RS = 0.07557  BV = 33  CJO = 1.598E-010  VJ = 0.4699  M = 0.5274 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMP3130L Spice Model v1.0 Last Revised 2011/10/7


*SRC=DMG4413LSS;DI_DMG4413LSS;MOSFETs P;Enh;30.0V 10.5A 7.50mohms  Diodes Inc MOSFET
*SYM=POWMOSP
.SUBCKT DI_DMG4413LSS   10 20 30
*     TERMINALS:  D  G  S
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  2.56m
RS  40  3  1.19m
RG  20  2  14.3
CGS  2  3  4.25n
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  6.52n
R1  13  0  1.00
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1.00
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.50n
.MODEL DMOS PMOS(LEVEL=3 VMAX=62.5k THETA=80.0m
+ ETA=2.00m VTO=-2.10 KP=5.73
.MODEL DCGD D (CJO=6.52n VJ=0.600 M=0.680
.MODEL DSUB D (IS=43.6n N=1.50 RS=0.129 BV=30.0
+ CJO=2.73n VJ=0.800 M=0.420 TT=285n
.MODEL DLIM D (IS=100U)
.ENDS


*ZETEX ZXM62P03E6 Spice Model v1.0 Last Revised 26/7/05
    *
    .SUBCKT ZXM62P03E6 30 40 50
    *----connections----D G S
    *
    M1 6 20 8 8 MOSMOD
    M2 6 20 8 8 MOSMODS
    RG 4 2 6
    RIN 2 8 200E6
    RD 3 6 RDSMOD 0.07
    RS 8 5 RDSMOD 0.037
    RL 3 5 35E6
    C1 2 8 390E-12
    C3 15 14 450E-12 
    C4 16 8 550E-12
    D1 3 5 DMOD1
    D2 3 17 DMOD2
    S1 2 15 13 14 SMOD1a
    S2 13 15 13 14 SMOD1b
    S3 16 13 8 13 SMOD2a
    S4 16 2 8 13 SMOD2b
    Egs1 2 17 2 8 1
    Egs2 13 8 2 8 1
    Eds1 14 8 3 8 1
    Egt1 2 20 21 8 1
    Vgt1 8 22 1
    Igt1 8 21 1
    Rgt 21 22 RMOD2 1
    LD 3 30 0.3E-9
    LG 4 40 1.9E-9
    LS 5 50 1.9E-9
    .MODEL MOSMOD PMOS VTO=-2.22 IS=1E-15 KP=4.1 CBD=245E-12 PB=1 LAMBDA=4.9E-3
    .MODEL MOSMODS PMOS VTO=-1.9 IS=1E-15 KP=0.04 PB=1
    .MODEL DMOD1 D IS=4E-13 RS=0.05 N=1.04 BV=36 TT=1e-8 
    .MODEL DMOD2 D CJO=206e-12 IS=1e-30 N=10
    .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4  VON=-1.75 VOFF=2.75
    .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4  VON=2.75 VOFF=-1.75
    .MODEL SMOD2a VSWITCH RON=1e-2 ROFF=1e4  VON=-1.5 VOFF=-3.5
    .MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4  VON=-3.5 VOFF=-1.5
    .MODEL RDSMOD RES (TC1=4E-3 TC2=7E-6)
    .MODEL RMOD2 RES (TC1=2.2E-3 TC2=3E-6)
    .ENDS ZXM62P03E6
    *
    *$
    *


*---------- DMG4435SSS Spice Model ----------
.SUBCKT DMG4435SSS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.01231 
RS 30 3 0.001 
RG 20 2 6.83 
CGS 2 3 1.465E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 1.556E-009 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 164.9  VMAX = 1.945E+005  KP = 39.94 
+ ETA = 0.005129  TOX = 6E-008  NSUB = 1.104E+016  KAPPA = 3.689  VTO = -2.072 
.MODEL DCGD D  CJO = 7.47E-010  VJ = 0.518  M = 0.3662 
.MODEL DSUB D  IS = 2.364E-010  N = 1.296  RS = 0.007836  BV = 33  
+CJO = 9.148E-011  VJ = 0.644  M = 0.663 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMG4435SSS Spice Model v1.0 Last Revised 2010/9/14


*ZETEX ZXM66P03N8 Spice Model v1.0 Last Revised 31/10/07
    *
    .SUBCKT ZXM66P03N8 3 4 5
    *----connections----D G S
    *
    M1 6 2 8 8 MOSMOD
    M2 6 41 8 8 MOSMODS
    RG 41 2 5
    RIN 2 8 100E6
    RD 31 6 RMOD1 0.005
    RS 8 51 RMOD1 0.018
    RL 3 5 350E6
    C1 2 8 800E-12
    C2 6 2 900E-12
    C3 15 14 3300E-12 
    C4 16 8 2000E-12
    D1 3 5 DMOD1
    Egt1 42 41 21 8 1
    Vgt1 8 22 1
    Igt1 8 21 1
    Rgt 21 22 RMOD2 1
    S1 2 15 13 14 SMOD1a
    S2 13 15 13 14 SMOD1b
    S3 16 13 8 13 SMOD2a
    S4 16 2 8 13 SMOD2b
    Egs2 13 8 2 8 1
    Eds1 14 8 31 8 1
    LD 3 31 1.3E-9
    LG 4 42 1.2E-9
    LS 5 51 1.2E-9
    .MODEL MOSMOD PMOS VTO=-2.33 IS=1E-15 KP=50 CBD=1E-12 PB=1 LAMBDA=4.9E-3
    .MODEL MOSMODS PMOS VTO=-1.75 IS=1E-15 KP=10 PB=1
    .MODEL DMOD1 D IS=1.2E-12 RS=0.012 TT=2.5e-8 BV=35
    .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4  VON=-1.75 VOFF=1.75
    .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4  VON=1.75 VOFF=-1.75
    .MODEL SMOD2a VSWITCH RON=1e-2 ROFF=1e4  VON=-1.5 VOFF=-3.5
    .MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4  VON=-3.5 VOFF=-1.5
    .MODEL RMOD1 RES (TC1=3E-3 TC2=8E-6)
    .MODEL RMOD2 RES (TC1=3E-3 TC2=2E-6)
    .ENDS ZXM66P03N8
    *
    *$
    *


*ZETEX ZXMP3A16N8 Spice Model v2.0 Last Revised 21/2/05
    *
    .SUBCKT ZXMP3A16N8 30 40 50
    *                D G S
    M1 6 2 5 5 Pmod L=1.2E-6 W=1.67 
    M2 5 2 5 6 Nmod L=1.4E-6 W=0.96 
    RG 4 2 6
    RIN 2 5 1E9
    RD 3 6 Rdmod 0.015
    RL 3 5 3E9
    C1 2 5 40E-12
    C2 3 4 25E-12
    D1 3 5  Dbodymod
    LD 3 30 1.3E-9
    LG 4 40 1.2E-9
    LS 5 50 1.2E-9
    .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E17
    +VTO=-1.48 KP=1.6E-5 RS=.022 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10)
    .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=2E16
    +TPG=-1 IS=1E-15 N=10)
    .MODEL Dbodymod D (IS=8E-13 RS=.022 IKF=0.1 TRS1=1.5e-3
    +CJO=50e-12  BV=33)
    .MODEL Rdmod RES (TC1=5.5e-3 TC2=1.5E-5)
    .ENDS   ZXMP3A16N8
    *
    *$
    *


*---------- DMP3010LPS Spice Model ----------
.SUBCKT DMP3010LPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.002936 
RS 30 3 0.001 
RG 20 2 1.28 
CGS 2 3 5.724E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 4E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 
+ TOX = 6E-008 NSUB = 1E+016 KP = 118.4 KAPPA = 64.79 VTO = -1.906 
.MODEL DCGD D CJO = 2.87E-009 VJ = 0.3337 M = 0.3427 
.MODEL DSUB D IS = 2.26E-010 N = 1.19 RS = 0.002225 
+ BV = 40 CJO = 1.506E-009 VJ = 0.09737 M = 0.2275 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP3010LPS Spice Model v1.0 Last Revised 2014/09/10



*---------- DMG2307L Spice Model ----------
.SUBCKT DMG2307L 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.04307 
RS 30 3 0.001 
RG 20 2 17.1 
CGS 2 3 3.339E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 3.9E-010 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1E+006  ETA = 0.001 
+ TOX = 6E-008  NSUB = 1E+016  KP = 8.459  KAPPA = 9.123  VTO = -1.527 
.MODEL DCGD D  CJO = 1.701E-010  VJ = 0.4656  M = 0.372 
.MODEL DSUB D  IS = 5E-010  N = 1.421  RS = 0.05533  BV = 33  CJO = 2.821E-011  VJ = 0.5166  M = 0.4868 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMG2307L Spice Model v1.0 Last Revised 2011/10/28


*---------- DMP3105LVT Spice Model ----------
.SUBCKT DMP3105LVT 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.04181 
RS 30 3 0.001 
RG 20 2 12.29 
CGS 2 3 3.719E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 1.46E-009 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1E+006  ETA = 0.001 
+ TOX = 6E-008  NSUB = 1E+016  KP = 9.397  KAPPA = 9.681  VTO = -1.023 
.MODEL DCGD D  CJO = 3.903E-010  VJ = 0.2566  M = 0.45 
.MODEL DSUB D  IS = 2.936E-009  N = 1.327  RS = 0.07557  BV = 33  CJO = 1.598E-010  VJ = 0.4699  M = 0.5274 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMP3105LVT Spice Model v1.0 Last Revised 2011/10/7


*---------- DMP31D0UFB4 Spice Model ----------
.SUBCKT DMP31D0UFB4 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.3953 
RS 30 3 0.001 
RG 20 2 166 
CGS 2 3 7.126E-011 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 8E-011 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 3.955 KAPPA = 0.2552 VTO = -0.6755 
.MODEL DCGD D CJO = 3.218E-011 VJ = 0.07451 M = 0.3033 
.MODEL DSUB D IS = 1.621E-008 N = 1.532 RS = 0.5477 
+ BV = 95.86 CJO = 1.035E-011 VJ = 0.0002124 M = 0.1217 
.MODEL DLIM D IS = 0.0001 
.MODEL DESD D IS = 1.137E-005 N = 1.184E+004 BV = 4.441E-010 
.ENDS
*Diodes DMP31D0UFB4 Spice Model v1.0 Last Revised 2013/10/9


*---------- DMG3401LSN Spice Model ----------
.SUBCKT DMG3401LSN 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.03105 
RS 30 3 0.001 
RG 20 2 7.3 
CGS 2 3 1.279E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1.1E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 24.29 KAPPA = 55.87 VTO = -0.8354 
.MODEL DCGD D CJO = 2.85E-010 VJ = 0.07814 M = 0.2639 
.MODEL DSUB D IS = 1.226E-009 N = 1.149 RS = 0.06597 
+ BV = 50 CJO = 1.669E-010 VJ = 0.6861 M = 0.5296 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMG3401LSN Spice Model v1.0 Last Revised 2012/11/28


*---------- DMP3028LFDE Spice Model ----------
.SUBCKT DMP3028LFDE 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01205 
RS 30 3 0.001 
RG 20 2 14.8 
CGS 2 3 1.141E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 8E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 1E-009 
+ TOX = 6E-008 NSUB = 1E+016 KP = 24.29 KAPPA = 55.87 VTO = -2.147 
.MODEL DCGD D CJO = 4.573E-010 VJ = 0.4119 M = 0.3922 
.MODEL DSUB D IS = 2.24E-010 N = 1.262 RS = 0.009108 
+ BV = 50 CJO = 2.261E-010 VJ = 0.5048 M = 0.5435 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP3028LFDE Spice Model v1.0 Last Revised 2013/11/12



*---------- DMP32D4SW Spice Model ----------
.SUBCKT DMP32D4SW 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.2489 
RS 30 3 0.001 
RG 20 2 6.2 
DESD1 2 5 DESD 
DESD2 3 5 DESD 
CGS 2 3 4.241E-011 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 7E-011 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 
+ ETA = 0.001 TOX = 6E-008 NSUB = 1E+016 KP = 0.9475 
+ KAPPA = 4.451E-013 VTO = -2.03 
.MODEL DCGD D CJO = 4.722E-011 VJ = 0.002858 M = 0.1852 
.MODEL DSUB D IS = 2.27E-010 N = 1.611 RS = 0.3594 BV = 95.86 CJO = 4.168E-012 
+ VJ = 2.307E-006 M = 0.05063 
.MODEL DLIM D IS = 0.0001 
.MODEL DESD D IS = 1.845E-008 N = 59.86 BV = 2.273 
.ENDS
*Diodes DMP32D4SW Spice Model v1.0 Last Revised 2013/8/5


*---------- DMP32D4S Spice Model ----------
.SUBCKT DMP32D4SW 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.2489 
RS 30 3 0.001 
RG 20 2 6.2 
DESD1 2 5 DESD 
DESD2 3 5 DESD 
CGS 2 3 4.241E-011 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 7E-011 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 
+ ETA = 0.001 TOX = 6E-008 NSUB = 1E+016 KP = 0.9475 
+ KAPPA = 4.451E-013 VTO = -2.03 
.MODEL DCGD D CJO = 4.722E-011 VJ = 0.002858 M = 0.1852 
.MODEL DSUB D IS = 2.27E-010 N = 1.611 RS = 0.3594 BV = 95.86 CJO = 4.168E-012 
+ VJ = 2.307E-006 M = 0.05063 
.MODEL DLIM D IS = 0.0001 
.MODEL DESD D IS = 1.845E-008 N = 59.86 BV = 2.273 
.ENDS
*Diodes DMP32D4S Spice Model v1.0 Last Revised 2013/8/5


*---------- DMP3017SFG Spice Model ----------
.SUBCKT DMP3017SFG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.005039 
RS 30 3 0.001 
RG 20 2 8.36 
CGS 2 3 1.93E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 1.6E-009 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1E+006  ETA = 0.001 
+ TOX = 6E-008  NSUB = 1E+016  KP = 46.32  KAPPA = 49.86  VTO = -2.2 
.MODEL DCGD D  CJO = 1.115E-009  VJ = 0.6515  M = 0.3641 
.MODEL DSUB D  IS = 4.862E-012  N = 1.048  RS = 0.005212  BV = 50  CJO = 7.568E-011  VJ = 0.8  M = 0.6 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMP3017SFG Spice Model v1.0 Last Revised 2015/3/26


*---------- DMP32D9UFZ Spice Model ----------
.SUBCKT DMP32D9UFZ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 1.727 
RS 30 3 0.001 
RG 20 2 389 
CGS 2 3 2.041E-011 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 5.3E-011 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1E+006  ETA = 0.001  
+ TOX = 6E-008  NSUB = 1E+016  KP = 0.5546  KAPPA = 49.86  VTO = -0.7516 
.MODEL DCGD D  CJO = 7.862E-012  VJ = 0.2  M = 0.3592 
.MODEL DSUB D  IS = 2.888E-005  N = 4.275  RS = 4.441E-010  BV = 35  CJO = 2.878E-012  VJ = 0.6  M = 0.2781 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMP32D9UFZ Spice Model v1.0 Last Revised 2014/12/5


*---------- DMP32D5SFB Spice Model ----------
.SUBCKT DMP32D5SFB 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.2549 
RS 30 3 1E-006 
RG 20 2 237 
CGS 2 3 4.266E-011 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 8E-011 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1E+006  ETA = 0.001 
+ TOX = 6E-008  NSUB = 1E+016  KP = 1.323  KAPPA = 49.86  VTO = -2 
.MODEL DCGD D  CJO = 2.35E-011  VJ = 0.8  M = 0.3265 
.MODEL DSUB D  IS = 2.271E-010  N = 1.582  RS = 0.2191  BV = 50  CJO = 7.829E-012  VJ = 0.7644  M = 0.6 
.MODEL DLIM D  IS = 0.0001 
.ENDS

*Diodes DMP32D5SFB Spice Model v1.0 Last Revised 2015/7/1


*---------- DMP3017SFGQ Spice Model ----------
.SUBCKT DMP3017SFGQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.005039 
RS 30 3 0.001 
RG 20 2 8.36 
CGS 2 3 1.93E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 1.6E-009 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1E+006  ETA = 0.001 
+ TOX = 6E-008  NSUB = 1E+016  KP = 46.32  KAPPA = 49.86  VTO = -2.2 
.MODEL DCGD D  CJO = 1.115E-009  VJ = 0.6515  M = 0.3641 
.MODEL DSUB D  IS = 4.862E-012  N = 1.048  RS = 0.005212  BV = 50  CJO = 7.568E-011  VJ = 0.8  M = 0.6 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMP3017SFGQ Spice Model v1.0 Last Revised 2015/9/9


*---------- DMG7401SFG Spice Model ----------
.SUBCKT DMG7401SFG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.004201 
RS 30 3 0.001 
RG 20 2 5.79 
CGS 2 3 2.07E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1.5E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 42.67 KAPPA = 19.32 VTO = -2.119 
.MODEL DCGD D CJO = 7.288E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.826E-008 N = 1.639 RS = 4.441E-010 BV = 30 CJO = 1E-009 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMG7401SFG Spice Model v1.0M Last Revised 2016/2/2



*---------- DMG7401SFGQ Spice Model ----------
.SUBCKT DMG7401SFGQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.004201 
RS 30 3 0.001 
RG 20 2 5.79 
CGS 2 3 2.07E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1.5E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 42.67 KAPPA = 19.32 VTO = -2.119 
.MODEL DCGD D CJO = 7.288E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.826E-008 N = 1.639 RS = 4.441E-010 BV = 30 CJO = 1E-009 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMG7401SFGQ Spice Model v1.0M Last Revised 2016/2/2



*---------- DMG4407SSS Spice Model ----------
.SUBCKT DMG4407SSS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.004201 
RS 30 3 0.001 
RG 20 2 5.79 
CGS 2 3 2.07E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1.5E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 42.67 KAPPA = 19.32 VTO = -2.119 
.MODEL DCGD D CJO = 7.288E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.826E-008 N = 1.639 RS = 4.441E-010 BV = 30 CJO = 1E-009 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMG4407SSS Spice Model v1.0M Last Revised 2016/2/2



*DIODES_INC_SPICE_MODEL DMP3098LSS 
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=11Dec2012
*VERSION=1


.SUBCKT DMP3098LSS   10 20 30
M1 1 2 3 3  Pmod1
RD 10 1 Rmod1 26E-3
RS 23 3 Rmod1 26E-3
RG 20 22 5
RIN 20 23 2E11
RDS 10 23 2E9
CGS 2 3 100E-12 
EGD 12 0 1 2 1
REGD 12 0 1
VFB 14 0 0 
FFB 1 2 VFB 1 
CGD 13 14 400E-12 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 10 23 DSUB
EL 2 22 1 3 .003
RL 30 23 3
LS  30 23 2E-9
.MODEL Pmod1 PMOS (LEVEL=3 VTO=-2.1 TOX=6E-8 NSUB=5E+16 KP=9 NFS=1E11 IS=1E-15 N=10)
.MODEL DCGD D (CJO = 350E-12  VJ = 0.45  M = 0.33)
.MODEL DSUB D (IS=2.5E-13 N=1 RS=0.018 BV=33 CJO=94E-12 VJ=0.45 M=0.33 TT=3E-9)
.MODEL DLIM D (IS=100U N=1)
.MODEL Rmod1 RES (TC1=.5e-3 TC2=3E-6)
.ENDS


*---------- DMP3130LQ Spice Model ----------
.SUBCKT DMP3130LQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.04181 
RS 30 3 0.001 
RG 20 2 12.29 
CGS 2 3 3.719E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 1.46E-009 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1E+006  ETA = 0.001 
+ TOX = 6E-008  NSUB = 1E+016  KP = 9.397  KAPPA = 9.681  VTO = -1.023 
.MODEL DCGD D  CJO = 3.903E-010  VJ = 0.2566  M = 0.45 
.MODEL DSUB D  IS = 2.936E-009  N = 1.327  RS = 0.07557  BV = 33  CJO = 1.598E-010  VJ = 0.4699  M = 0.5274 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMP3130LQ Spice Model v1.0M Last Revised 2016/3/21


*---------- DMP3028LK3Q Spice Model ----------
.SUBCKT DMP3028LK3Q 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01205 
RS 30 3 0.001 
RG 20 2 14.8 
CGS 2 3 1.141E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 8E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 1E-009 
+ TOX = 6E-008 NSUB = 1E+016 KP = 24.29 KAPPA = 55.87 VTO = -2.147 
.MODEL DCGD D CJO = 4.573E-010 VJ = 0.4119 M = 0.3922 
.MODEL DSUB D IS = 2.24E-010 N = 1.262 RS = 0.009108 
+ BV = 50 CJO = 2.261E-010 VJ = 0.5048 M = 0.5435 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP3028LK3Q Spice Model v1.0 Last Revised 2016/8/31



*---------- DMPH3010LPSQ Spice Model ----------
.SUBCKT DMPH3010LPSQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.002936 
RS 30 3 0.001 
RG 20 2 1.28 
CGS 2 3 5.724E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 4E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 
+ TOX = 6E-008 NSUB = 1E+016 KP = 118.4 KAPPA = 64.79 VTO = -1.906 
.MODEL DCGD D CJO = 2.87E-009 VJ = 0.3337 M = 0.3427 
.MODEL DSUB D IS = 2.26E-010 N = 1.19 RS = 0.002225 
+ BV = 40 CJO = 1.506E-009 VJ = 0.09737 M = 0.2275 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMPH3010LPSQ Spice Model v1.0 Last Revised 2014/09/10



*---------- DMPH3010LPS Spice Model ----------
.SUBCKT DMPH3010LPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.002936 
RS 30 3 0.001 
RG 20 2 1.28 
CGS 2 3 5.724E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 4E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 
+ TOX = 6E-008 NSUB = 1E+016 KP = 118.4 KAPPA = 64.79 VTO = -1.906 
.MODEL DCGD D CJO = 2.87E-009 VJ = 0.3337 M = 0.3427 
.MODEL DSUB D IS = 2.26E-010 N = 1.19 RS = 0.002225 
+ BV = 40 CJO = 1.506E-009 VJ = 0.09737 M = 0.2275 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMPH3010LPS Spice Model v1.0 Last Revised 2014/09/10


*---------- DMPH3010LK3Q Spice Model ----------
.SUBCKT DMPH3010LK3Q 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.002936 
RS 30 3 0.001 
RG 20 2 1.28 
CGS 2 3 5.724E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 4E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 
+ TOX = 6E-008 NSUB = 1E+016 KP = 118.4 KAPPA = 64.79 VTO = -1.906 
.MODEL DCGD D CJO = 2.87E-009 VJ = 0.3337 M = 0.3427 
.MODEL DSUB D IS = 2.26E-010 N = 1.19 RS = 0.002225 
+ BV = 40 CJO = 1.506E-009 VJ = 0.09737 M = 0.2275 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMPH3010LK3Q Spice Model v1.0 Last Revised 2014/09/10



*---------- DMPH3010LK3 Spice Model ----------
.SUBCKT DMPH3010LK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.002936 
RS 30 3 0.001 
RG 20 2 1.28 
CGS 2 3 5.724E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 4E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 
+ TOX = 6E-008 NSUB = 1E+016 KP = 118.4 KAPPA = 64.79 VTO = -1.906 
.MODEL DCGD D CJO = 2.87E-009 VJ = 0.3337 M = 0.3427 
.MODEL DSUB D IS = 2.26E-010 N = 1.19 RS = 0.002225 
+ BV = 40 CJO = 1.506E-009 VJ = 0.09737 M = 0.2275 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMPH3010LK3 Spice Model v1.0 Last Revised 2014/09/10



*---------- DMP3007SCG Spice Model ----------
.SUBCKT DMP3007SCG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001386 
RS 30 3 0.001 
RG 20 2 22.8 
CGS 2 3 2.969E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 3.2E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 98.34 KAPPA = 19.32 VTO = -2.316 
.MODEL DCGD D CJO = 6E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 3.186E-010 N = 1.188 RS = 4.441E-010 BV = 36 CJO = 1E-009 VJ = 0.8 M = 0.6 TT = 9.51E-009 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP3007SCG Spice Model v1.0M Last Revised 2016/9/7


*---------- DMP3007SPS Spice Model ----------
.SUBCKT DMP3007SPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001386 
RS 30 3 0.001 
RG 20 2 22.8 
CGS 2 3 2.969E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 3.2E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 98.34 KAPPA = 19.32 VTO = -2.316 
.MODEL DCGD D CJO = 6E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 3.186E-010 N = 1.188 RS = 4.441E-010 BV = 36 CJO = 1E-009 VJ = 0.8 M = 0.6 TT = 9.51E-009 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP3007SPS Spice Model v1.0M Last Revised 2016/9/7


*---------- DMP3007SFG Spice Model ----------
.SUBCKT DMP3007SFG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001386 
RS 30 3 0.001 
RG 20 2 22.8 
CGS 2 3 2.969E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 3.2E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 98.34 KAPPA = 19.32 VTO = -2.316 
.MODEL DCGD D CJO = 6E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 3.186E-010 N = 1.188 RS = 4.441E-010 BV = 36 CJO = 1E-009 VJ = 0.8 M = 0.6 TT = 9.51E-009 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP3007SFG Spice Model v1.0M Last Revised 2016/9/7


*SYM=POWMOSP
.SUBCKT DMP2035U   D=10 G=20 S=30
*     TERMINALS:  D  G  S
M1   1  2  3  3  PMOS L=0.6U W=0.9
RD  10  1  15m
RS  30  3  4m
RG  20  2  9.45
CGS  2  3  1.42n
EGD 12  30  2  1  1
VFB 14  30  0
FFB  2  1  VFB  1
CGD 13 14  598p
R1  13  30  1.00
D1  13 12  DLIM
DDG 14 15  DCGD
R2  12 15  1.00
D2  30  15  DLIM
DSD 10  3  DSUB
.MODEL PMOS PMOS LEVEL=3 U0=300 VMAX=40k
+ ETA=0.1m VTO=-1.02 TOX=16.8n NSUB=2e17
.MODEL DCGD D CJO=598p VJ=0.150 M=0.340
.MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20
+ CJO=40p VJ=0.500 M=0.450
.MODEL DLIM D IS=100U
.ENDS


*SRC=DMP2066LDM;DI_DMP2066LDM;MOSFETs P;Enh;20.0V 4.60A 40.0mohms   
*SYM=POWMOSP
.SUBCKT DI_DMP2066LDM   10 20 30
*     TERMINALS:  D  G  S
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  18.0m
RS  40  3  2.00m
RG  20  2  32.6
CGS  2  3  660p
EGD 12  0  1  2  1
VFB 14  0  0
FFB  1  2  VFB  1
CGD 13 14  1.47n
R1  13  0  1.00
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1.00
D2  15  0  DLIM
DSD  10 3  DSUB
LS  30 40  7.50n
.MODEL DMOS PMOS(LEVEL=3 VMAX=41.7k THETA=80.0m
+ ETA=2.00m VTO=-1.20 KP=43.8
.MODEL DCGD D (CJO=1.47n VJ=0.600 M=0.680
.MODEL DSUB D (IS=19.1n N=1.50 RS=0.141 BV=20.0
+ CJO=350p VJ=0.800 M=0.420 TT=223n
.MODEL DLIM D (IS=100U)
.ENDS


*SRC=DMP2066LSD;DI_DMP2066LSD;MOSFETs P;Enh;20.0V 5.80A 40.0mohms   
*SYM=POWMOSP
.SUBCKT DI_DMP2066LSD   10 20 30
*     TERMINALS:  D  G  S
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  18.0m
RS  40  3  2.00m
RG  20  2  25.9
CGS  2  3  660p
EGD 12  0  1  2  1
VFB 14  0  0
FFB  1  2  VFB  1
CGD 13 14  1.47n
R1  13  0  1.00
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1.00
D2  15  0  DLIM
DSD  10 3  DSUB
LS  30 40  7.50n
.MODEL DMOS PMOS(LEVEL=3 VMAX=41.7k THETA=80.0m
+ ETA=2.00m VTO=-1.20 KP=43.8
.MODEL DCGD D (CJO=1.47n VJ=0.600 M=0.680
.MODEL DSUB D (IS=24.1n N=1.50 RS=0.112 BV=20.0
+ CJO=350p VJ=0.800 M=0.420 TT=239n
.MODEL DLIM D (IS=100U)
.ENDS


*SYM=POWMOSP
.SUBCKT DMG2301U   D=10 G=20 S=30
*     TERMINALS:  D  G  S
M1   1  2  3  3  PMOS L=0.6U W=0.4
RD  10  1  60m
RS  30  3  15m
RG  20  2  44.9
CGS  2  3  560p
EGD 12  30  2  1  1
VFB 14  30  0
FFB  2  1  VFB  1
CGD 13 14  258p
R1  13  30  1.00
D1  13 12  DLIM
DDG 14 15  DCGD
R2  12 15  1.00
D2  30  15  DLIM
DSD 10  3  DSUB
.MODEL PMOS PMOS LEVEL=3 U0=300 VMAX=40k
+ ETA=0.1m VTO=-1.0 TOX=16.8n NSUB=5.36e16
.MODEL DCGD D CJO=298p VJ=0.50 M=0.550
.MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20
+ CJO=28p VJ=0.500 M=0.650
.MODEL DLIM D IS=100U
.ENDS


*---------- DMG3415U Spice Model ----------
.SUBCKT DMG3415U 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.0317 
RS 30 3 0.001 
RG 20 2 251 
CGS 2 3 9.65E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 9E-010 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 2.464E+005  KP = 25.76  ETA = 0.005087 
+ TOX = 6E-008  NSUB = 1E+016  KAPPA = 0.7287  VTO = -0.7669 
.MODEL DCGD D  CJO = 4.12E-010  VJ = 0.1028  M = 0.3062 
.MODEL DSUB D  IS = 2.605E-008  N = 1.315  RS = 0.07863  BV = 20  CJO = 2.196E-010  VJ = 0.2994  M = 0.4305 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMG3415U Spice Model v2.0 Last Revised 2013/12/10


*---------- DMG3415UFY4 Spice Model ----------
.SUBCKT DMG3415UFY4 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.02849 
RS 30 3 0.001 
RG 20 2 251 
CGS 2 3 9.685E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 1.25E-009 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1.206E+005  KP = 26.84  ETA = 0.004426 
+ TOX = 6E-008  NSUB = 1E+016  KAPPA = 0.2906  VTO = -0.7669 
.MODEL DCGD D  CJO = 6.481E-010  VJ = 0.4221  M = 0.4512 
.MODEL DSUB D  IS = 2.605E-008  N = 1.315  RS = 0.07863  BV = 20  CJO = 1.057E-010  VJ = 0.008444  M = 0.2401 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMG3415UFY4 Spice Model v1.0 Last Revised 2011/3/24


*SRC=DMP2066LSN;DI_DMP2066LSN;MOSFETs P;Enh;20.0V 4.60A 40.0mohms  Diodes Inc MOSFET
*SYM=POWMOSP
.SUBCKT DI_DMP2066LSN   10 20 30
*     TERMINALS:  D  G  S
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  18.0m
RS  40  3  2.00m
RG  20  2  32.6
CGS  2  3  660p
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  1.47n
R1  13  0  1.00
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1.00
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.50n
.MODEL DMOS PMOS(LEVEL=3 VMAX=41.7k THETA=80.0m
+ ETA=1.13m VTO=-1.20 KP=44.8
.MODEL DCGD D (CJO=1.47n VJ=0.600 M=0.680
.MODEL DSUB D (IS=19.1n N=1.50 RS=97.8m BV=20.0
+ CJO=350p VJ=0.800 M=0.420 TT=188n
.MODEL DLIM D (IS=100U)
.ENDS


*SRC=DMP2066LSS;DI_DMP2066LSS;MOSFETs P;Enh;20.0V 6.50A 40.0mohms   
*SYM=POWMOSP
.SUBCKT DI_DMP2066LSS   10 20 30
*     TERMINALS:  D  G  S
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  18.0m
RS  40  3  2.00m
RG  20  2  23.1
CGS  2  3  660p
EGD 12  0  1  2  1
VFB 14  0  0
FFB  1  2  VFB  1
CGD 13 14  1.47n
R1  13  0  1.00
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1.00
D2  15  0  DLIM
DSD  10 3  DSUB
LS  30 40  7.50n
.MODEL DMOS PMOS(LEVEL=3 VMAX=41.7k THETA=80.0m
+ ETA=2.00m VTO=-1.20 KP=43.8
.MODEL DCGD D (CJO=1.47n VJ=0.600 M=0.680
.MODEL DSUB D (IS=27.0n N=1.50 RS=0.100 BV=20.0
+ CJO=350p VJ=0.800 M=0.420 TT=247n
.MODEL DLIM D (IS=100U)
.ENDS


*---------- DMP2305U Spice Model ----------
.SUBCKT DMP2305U 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.03653 
RS 30 3 0.001 
RG 20 2 23 
CGS 2 3 6.954E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 8.85E-010 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1.385E+005  ETA = 0.001 
+ TOX = 6E-008  NSUB = 1E+016  KP = 24.44  KAPPA = 0.8442  VTO = -0.8978 
.MODEL DCGD D  CJO = 3.468E-010  VJ = 0.2064  M = 0.3945 
.MODEL DSUB D  IS = 4.536E-009  N = 1.339  RS = 0.05752  BV = 30  CJO = 2.406E-011  VJ = 1.677E-012  M = 0.8 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMP2305U  Spice Model v1.0 Last Revised 2011/6/20


*---------- 
DMP2160UFDB Spice Model ----------
.SUBCKT DMP2160UFDB 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.06732 
RS 30 3 0.001 
RG 20 2 44.9 
CGS 2 3 5.341E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 6.75E-010 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1.391E+005  KP = 20.82  ETA = 0.005556 
+ TOX = 6E-008  NSUB = 1E+016  KAPPA = 0.5405  VTO = -0.9485 
.MODEL DCGD D  CJO = 3.766E-010  VJ = 0.2194  M = 0.4355 
.MODEL DSUB D  IS = 8.7E-009  N = 1.353  RS = 0.08758  BV = 25  CJO = 1E-012  VJ = 0.3188  M = 0.5753 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMP2160UFDB Spice Model v1.0 Last Revised 2011/6/14


*SRC=DMP2123L;DI_DMP2123L;MOSFETs P;Enh;20.0V 3.00A 0.123ohms  Diodes Inc MOSFET
*SYM=POWMOSP
.SUBCKT DI_DMP2123L   10 20 30
*     TERMINALS:  D  G  S
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  57.4m
RS  40  3  4.07m
RG  20  2  50.0
CGS  2  3  342p
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  966p
R1  13  0  1.00
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1.00
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.50n
.MODEL DMOS PMOS(LEVEL=3 VMAX=41.7k THETA=80.0m
+ ETA=1.80m VTO=-1.25 KP=44.2
.MODEL DCGD D (CJO=966p VJ=0.600 M=0.680
.MODEL DSUB D (IS=12.5n N=1.50 RS=0.170 BV=20.0
+ CJO=230p VJ=0.800 M=0.420 TT=196n
.MODEL DLIM D (IS=100U)
.ENDS


*SRC=DMP2130L;DI_DMP2130L;MOSFETs P;Enh;20.0V 1.00A 0.125ohms  Diodes Inc MOSFET
*SYM=POWMOSP
.SUBCKT DI_DMP2130L   10 20 30
*     TERMINALS:  D  G  S
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  58.4m
RS  40  3  4.12m
RG  20  2  150
CGS  2  3  342p
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  966p
R1  13  0  1.00
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1.00
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.50n
.MODEL DMOS PMOS(LEVEL=3 VMAX=41.7k THETA=80.0m
+ ETA=2.00m VTO=-1.25 KP=44.2Meg
.MODEL DCGD D (CJO=966p VJ=0.600 M=0.680
.MODEL DSUB D (IS=4.15n N=1.50 RS=0.510 BV=20.0
+ CJO=230p VJ=0.800 M=0.420 TT=141n
.MODEL DLIM D (IS=100U)
.ENDS


*SRC=DMP2130LDM;DI_DMP2130LDM;MOSFETs P;Enh;20.0V 3.40A 80.0mohms  Diodes Inc MOSFET
*SYM=POWMOSP
.SUBCKT DI_DMP2130LDM   10 20 30
*     TERMINALS:  D  G  S
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  37.0m
RS  40  3  3.00m
RG  20  2  44.1
CGS  2  3  345p
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  937p
R1  13  0  1.00
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1.00
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.50n
.MODEL DMOS PMOS(LEVEL=3 VMAX=41.7k THETA=80.0m
+ ETA=1.53m VTO=-1.25 KP=21.9
.MODEL DCGD D (CJO=937p VJ=0.600 M=0.680
.MODEL DSUB D (IS=14.1n N=1.50 RS=0.150 BV=20.0
+ CJO=224p VJ=0.800 M=0.420 TT=188n
.MODEL DLIM D (IS=100U)
.ENDS


*---------- 
DMP2160UW Spice Model ----------
.SUBCKT DMP2160UW 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.06732 
RS 30 3 0.001 
RG 20 2 44.9 
CGS 2 3 5.341E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 6.75E-010 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1.391E+005  KP = 20.82  ETA = 0.005556 
+ TOX = 6E-008  NSUB = 1E+016  KAPPA = 0.5405  VTO = -0.9485 
.MODEL DCGD D  CJO = 3.766E-010  VJ = 0.2194  M = 0.4355 
.MODEL DSUB D  IS = 8.7E-009  N = 1.353  RS = 0.08758  BV = 25  CJO = 1E-012  VJ = 0.3188  M = 0.5753 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMP2160UW Spice Model v1.0 Last Revised 2011/6/14


*DIODES_INC_SPICE_MODEL DMP2225L
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=18sep2013
*VERSION=2
*PINS 10=D 20=G 30=S


.SUBCKT DMP2225L   10 20 30
M1 1 2 3 3  Pmod1
RD 10 1 Rmod1 45E-3
RS 23 3 Rmod1 10E-3
RG 20 22 14
RIN 20 23 2E11
RDS 10 23 2E9
CGS 2 3 220E-12 
EGD 12 0 1 2 1
REGD 12 0 1
VFB 14 0 0 
FFB 1 2 VFB 1 
CGD 13 14 480E-12 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 10 23 DSUB
EL 2 22 1 3 .003
RL 30 23 3
LS  30 23 2E-9
.MODEL Pmod1 PMOS (LEVEL=3 VTO=-1.13 TOX=7.5E-8 NSUB=1E+16 KP=7.5 NFS=1E+11 IS=1E-15 N=10)
.MODEL DCGD D (CJO = 380E-12  VJ = 0.45  M = 0.33 T_ABS=25)
.MODEL DSUB D (IS=.9E-12 N=1.02 RS=0.035 BV=22 CJO=94E-12 VJ=0.45 M=0.33 TT=3E-9)
.MODEL DLIM D (IS=100U N=1 T_ABS=25)
.MODEL Rmod1 RES (TC1=1e-3 TC2=1E-6)
.ENDS

.SIMULATOR DEFAULT


*                (c)  2013 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*SRC=DMP2104LP;???;MOSFETs P;Enh;20.0V 1.50A 0.150ohms  Diodes, Inc. 
.MODEL ???  PMOS( LEVEL=1 VTO=-1.00 KP=11.9  GAMMA=1.24
+ PHI=.75  LAMBDA=386u RD=21.0m RS=21.0m
+ IS=750f  PB=0.800 MJ=0.460 CBD=81.1p 
+ CBS=97.4p  CGSO=720n CGDO=600n CGBO=1.88u  )
*   -- Assumes default L=100U W=100U --


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=01/03/2010
*VERSION=2
*------connections-------D_G_S
*
.SUBCKT DMP2104V 1 2 3
M1 1 2 3 3 Pmod1
M2 1 2 3 3 Pmod2
M3 1 2 3 3 Pmod3
.MODEL Pmod1 PMOS(LEVEL=1 VTO=-1.08 KP=11.9  GAMMA=1.24
+ PHI=.75  LAMBDA=244u RD=45m RS=21.0m
+ IS=475f  PB=0.800 MJ=0.460 CBD=81.1p 
+ CBS=97.4p  CGSO=720n CGDO=600n CGBO=1.88u)
.MODEL Pmod2 PMOS(LEVEL=1 VTO=-0.88 KP=1.2 RD=45 RS=2.1)
.MODEL Pmod3 PMOS(LEVEL=1 VTO=-0.68 KP=0.12 RD=450 RS=210)
.ENDS
*
*$


*SRC=DMP2240UDM;DI_DMP2240UDM;MOSFETs Enh;20.0V 2.00A 0.150ohms  Diodes Inc MOSFET
.MODEL DI_DMP2240UDM  PMOS( LEVEL=1 VTO=1.00 KP=11.9u  GAMMA=1.24
+ PHI=.75  LAMBDA=514u RD=21.0m RS=21.0m
+ IS=1.00p  PB=0.800 MJ=0.460 CBD=81.1p 
+ CBS=97.4p  CGSO=720n CGDO=600n CGBO=1.88u  )
*   -- Assumes default L=100U W=100U --


*ZETEX ZXM62P02E6 Spice Model v1.0 Last Revised 9/8/05
    *
    .SUBCKT ZXM62P02E6 30 40 50
    *----connections----D G S
    *
    M1 6 20 8 8 MOSMOD
    M2 6 20 8 8 MOSMODS
    RG 4 2 11
    RIN 2 8 200E6
    RD 3 6 RDSMOD 0.04
    RS 8 5 RDSMOD 0.025
    RL 3 5 35E6
    C1 2 8 390E-12
    C3 15 14 450E-12 
    C4 16 8 550E-12
    D1 3 5 DMOD1
    D2 3 17 DMOD2
    S1 2 15 13 14 SMOD1a
    S2 13 15 13 14 SMOD1b
    S3 16 13 8 13 SMOD2a
    S4 16 2 8 13 SMOD2b
    Egs1 2 17 2 8 1
    Egs2 13 8 2 8 1
    Eds1 14 8 3 8 1
    Egt1 2 20 21 8 1
    Vgt1 8 22 1
    Igt1 8 21 1
    Rgt 21 22 RMOD2 1
    LD 3 30 0.3E-9
    LG 4 40 1.9E-9
    LS 5 50 1.9E-9
    .MODEL MOSMOD PMOS VTO=-1.50 IS=1E-15 KP=3.8 CBD=245E-12 PB=1 LAMBDA=4.9E-2
    .MODEL MOSMODS PMOS VTO=-1.20 IS=1E-15 KP=0.04 PB=1
    .MODEL DMOD1 D IS=4E-12 RS=0.05 N=1.04 BV=23 TT=1e-8 
    .MODEL DMOD2 D CJO=206e-12 IS=1e-30 N=10
    .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4  VON=-1.75 VOFF=2.75
    .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4  VON=2.75 VOFF=-1.75
    .MODEL SMOD2a VSWITCH RON=1e-2 ROFF=1e4  VON=-1.5 VOFF=-3.5
    .MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4  VON=-3.5 VOFF=-1.5
    .MODEL RDSMOD RES (TC1=4E-3 TC2=7E-6)
    .MODEL RMOD2 RES (TC1=2E-3 TC2=2.5E-6)
    .ENDS ZXM62P02E6
    *
    *$
    *


*---------- DMP2240UW Spice Model ----------
.SUBCKT DMP2240UW 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.04586 
RS 30 3 0.001 
RG 20 2 72 
CGS 2 3 5.078E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 7.9E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 14.56 KAPPA = 1 VTO = -0.75 
.MODEL DCGD D CJO = 3.371E-010 VJ = 0.226 M = 0.4329 
.MODEL DSUB D IS = 1.334E-008 N = 1.338 RS = 0.1868 BV = 25 
+ CJO = 3.296E-011 VJ = 0.3087 M = 0.4639 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMP2240UW Spice Model v1.0 Last Revised 2015/06/10


*ZETEX ZXMD63P02X Spice Model v1.0 Last Revised 18/8/00
    *
    .SUBCKT ZXMD63P02X 3 4 5
    *               D G S
    M1 3 2 5 5 M63P02
    RG 4 2 18
    RL 3 5 1E9
    C1 2 5 700E-12
    C2 3 2 55E-12
    D1 3 5 D63P02
    *
    .MODEL M63P02 PMOS VTO=-1.37 RS=0.08 RD=0.04 KP=8
    +CBD=700E-12 LAMBDA=9E-3
    .MODEL D63P02 D IS=4E-12 N=1.04 IKF=44E-3 RS=96E-3
    .ENDS ZXMD63P02X
    *
    *$
    *


*ZETEX ZXM61P02F Spice Model v1.0 Last Revised 24/2/04
    *
    .SUBCKT ZXM61P02F 3 4 5
    *---connections---D G S
    *
    M1 6 20 8 8 MOSMOD
    M2 6 20 8 8 MOSMODS
    RG 4 2 8
    RIN 2 8 200E6
    RD 3 6 RDSMOD 0.09
    RS 8 5 RDSMOD 0.068
    RL 3 5 35E6
    C1 2 8 207E-12
    C3 15 14 267E-12 
    C4 16 8 294E-12
    D1 3 5 DMOD1
    D2 3 17 DMOD2
    S1 2 15 13 14 SMOD1a
    S2 13 15 13 14 SMOD1b
    S3 16 13 8 13 SMOD2a
    S4 16 2 8 13 SMOD2b
    Egs1 2 17 2 8 1
    Egs2 13 8 2 8 1
    Eds1 14 8 3 8 1
    Egt1 2 20 21 8 1
    Vgt1 8 22 1
    Igt1 8 21 1
    Rgt 21 22 RMOD2 1
    .MODEL MOSMOD PMOS VTO=-1.6 IS=1E-15 KP=2.1 CBD=102E-12 PB=1 LAMBDA=4.9E-3
    .MODEL MOSMODS PMOS VTO=-1.2 IS=1E-15 KP=0.21 PB=1
    .MODEL DMOD1 D IS=3E-13 RS=0.13 N=1.01 BV=24 TT=2e-8
    .MODEL DMOD2 D CJO=110e-12 IS=1e-30 N=10
    .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4  VON=-1.75 VOFF=2.75
    .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4  VON=2.75 VOFF=-1.75
    .MODEL SMOD2a VSWITCH RON=1e-2 ROFF=1e4  VON=-1.5 VOFF=-3.5
    .MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4  VON=-3.5 VOFF=-1.5
    .MODEL RDSMOD RES (TC1=2.4E-3 TC2=1.5E-5)
    .MODEL RMOD2 RES (TC1=0.9E-3 TC2=1.5E-6)
    .ENDS ZXM61P02F
    *
    *$
    *


*SYM=POWMOSP
.SUBCKT DMG1013UW   10 20 30
*     TERMINALS:  D  G  S
M1   1  20  3  3  PMOS L=0.6U W=47.66m
RD  10  1  300m
RS  30  3  85m
CGS  20  3  57.55p
EGD 12  30  20  1  1
VFB 14  30  0
FFB  20  1  VFB  1
CGD 13 14  22.2p
R1  13  30  1.00
D1  13 12  DLIM
DDG 14 15  DCGD
R2  12 15  1.00
D2  30  15  DLIM
DSD 10  3  DSUB
.MODEL PMOS PMOS LEVEL=3 U0=200 VMAX=40k
+ ETA=0.1m VTO=-0.952 TOX=20n NSUB=2.1e16
.MODEL DCGD D CJO=22.2p VJ=0.150 M=0.320
.MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20.0
+ CJO=20p VJ=0.600 M=0.50
.MODEL DLIM D IS=100U
.ENDS

*Diodes DMG1013UW  Spice Model v1.0 Last Revised 2014/6/17


*SRC=DMP2004K;DI_DMP2004K;MOSFETs P;Enh;20.0V 0.600A 0.900ohms  DIODES INC MOSFET
.MODEL DI_DMP2004K  PMOS( LEVEL=1 VTO=-1.00 KP=0.200  GAMMA=1.24
+ PHI=.75  LAMBDA=208u RD=0.126 RS=0.126
+ IS=300f  PB=0.800 MJ=0.460 CBD=40.6p 
+ CBS=48.7p  CGSO=240n CGDO=200n CGBO=1.31u  )
*   -- Assumes default L=100U W=100U --


*SRC=DMP2004WK;DI_DMP2004WK;MOSFETs P;Enh;20.0V 0.400A 0.900ohms  DIODES INC MOSFET
.MODEL DI_DMP2004WK  PMOS( LEVEL=1 VTO=-1.00 KP=0.200  GAMMA=1.24
+ PHI=.75  LAMBDA=208u RD=0.126 RS=0.126
+ IS=200f  PB=0.800 MJ=0.460 CBD=40.6p 
+ CBS=48.7p  CGSO=240n CGDO=200n CGBO=1.31u  )
*   -- Assumes default L=100U W=100U --


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=01/03/2010
*VERSION=2
*------connections-------D_G_S
*
.SUBCKT DMP2004VK 1 2 3
M1 1 2 3 3 Pmod1
M2 1 2 3 3 Pmod2
M3 1 2 3 3 Pmod3
.MODEL Pmod1 PMOS(LEVEL=1 VTO=-0.95 KP=1.5 GAMMA=1.24
+ PHI=.75  LAMBDA=208u RD=0.5 RS=0.126
+ IS=265f  PB=0.800 MJ=0.460 CBD=40.6p
+ CBS=48.7p  CGSO=240n CGDO=200n CGBO=1.31u)
.MODEL Pmod2 PMOS(LEVEL=1 VTO=-0.75 KP=0.15 RD=50 RS=13)
.MODEL Pmod3 PMOS(LEVEL=1 VTO=-0.55 KP=0.015 RD=500 RS=130)
.ENDS
*
*$


*---------- DMG1023UV Spice Model ----------
.SUBCKT DMG1023UV 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.3494 
RS 30 3 0.001 
RG 20 2 147 
CGS 2 3 5.502E-011 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 9E-011 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 200  VMAX = 4E+004  KP = 1.814 
+ ETA = 0.0001  TOX = 2E-008  NSUB = 1E+015  KAPPA = 0.3557  VTO = -0.8709 
.MODEL DCGD D  CJO = 2.616E-011  VJ = 0.127  M = 0.3001 
.MODEL DSUB D  IS = 1.524E-009  N = 1.789  RS = 0.1462  BV = 22  CJO = 1.689E-011  VJ = 0.3791  M = 0.2844 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMG1023UV Spice Model v1.0 Last Revised 2010/10/4


*SRC=DMP2004DMK;DI_DMP2004DMK;MOSFETs P;Enh;20.0V 0.550A 0.900ohms  DIODES INC MOSFET
.MODEL DI_DMP2004DMK  PMOS( LEVEL=1 VTO=-1.00 KP=0.200  GAMMA=1.24
+ PHI=.75  LAMBDA=208u RD=0.126 RS=0.126
+ IS=275f  PB=0.800 MJ=0.460 CBD=40.6p 
+ CBS=48.7p  CGSO=240n CGDO=200n CGBO=1.31u  )
*   -- Assumes default L=100U W=100U --


*SRC=DMP2004DWK;DI_DMP2004DWK;MOSFETs P;Enh;20.0V 0.430A 0.900ohms  DIODES INC MOSFET
.MODEL DI_DMP2004DWK  PMOS( LEVEL=1 VTO=-1.00 KP=0.200  GAMMA=1.24
+ PHI=.75  LAMBDA=208u RD=0.126 RS=0.126
+ IS=215f  PB=0.800 MJ=0.460 CBD=40.6p 
+ CBS=48.7p  CGSO=240n CGDO=200n CGBO=1.31u  )
*   -- Assumes default L=100U W=100U --


*SRC=DMP2004TK;DI_DMP2004TK;MOSFETs P;Enh;20.0V 0.430A 2.40ohms  DIODES INC MOSFET
.MODEL DI_DMP2004TK  PMOS( LEVEL=1 VTO=-1.00 KP=0.200  GAMMA=1.24
+ PHI=.75  LAMBDA=447u RD=0.336 RS=0.336
+ IS=215f  PB=0.800 MJ=0.460 CBD=40.6p 
+ CBS=48.7p  CGSO=240n CGDO=200n CGBO=1.31u  )
*   -- Assumes default L=100U W=100U --


*SRC=DMP2012SN;DI_DMP2012SN;MOSFETs P;Enh;20.0V 0.700A 0.370ohms  Diodes Inc. MOSFET
.MODEL DI_DMP2012SN  PMOS( LEVEL=1 VTO=-1.20 KP=5.62u  GAMMA=1.49
+ PHI=.75  LAMBDA=365u RD=51.8m RS=51.8m
+ IS=350f  PB=0.800 MJ=0.460 CBD=232p 
+ CBS=278p  CGSO=600n CGDO=500n CGBO=700n  )
*   -- Assumes default L=100U W=100U --


*---------- DMP2069UFY4 Spice Model ----------
.SUBCKT DMP2069UFY4 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.0317 
RS 30 3 0.001 
RG 20 2 251 
CGS 2 3 9.65E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 9E-010 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 2.464E+005  KP = 25.76  ETA = 0.005087 
+ TOX = 6E-008  NSUB = 1E+016  KAPPA = 0.7287  VTO = -0.7669 
.MODEL DCGD D  CJO = 4.12E-010  VJ = 0.1028  M = 0.3062 
.MODEL DSUB D  IS = 2.605E-008  N = 1.315  RS = 0.07863  BV = 20  CJO = 2.196E-010  VJ = 0.2994  M = 0.4305 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMP2069UFY4 Spice Model v1.0 Last Revised 2011/3/25


*---------- 
DMP2160U Spice Model ----------
.SUBCKT DMP2160U 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.06732 
RS 30 3 0.001 
RG 20 2 44.9 
CGS 2 3 5.341E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 6.75E-010 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1.391E+005  KP = 20.82  ETA = 0.005556 
+ TOX = 6E-008  NSUB = 1E+016  KAPPA = 0.5405  VTO = -0.9485 
.MODEL DCGD D  CJO = 3.766E-010  VJ = 0.2194  M = 0.4355 
.MODEL DSUB D  IS = 8.7E-009  N = 1.353  RS = 0.08758  BV = 25  CJO = 1E-012  VJ = 0.3188  M = 0.5753 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMP2160U Spice Model v1.0 Last Revised 2011/6/14


*DIODES_INC_SPICE_MODEL DMP2215L
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=06Jan2012
*VERSION=1
*PINS 10=D 20=G 30=S


.SUBCKT DMP2215L   10 20 30
M1 1 2 3 3  Pmod1
RD 10 1 Rmod1 45E-3
RS 23 3 Rmod1 10E-3
RG 20 22 14
RIN 20 23 2E11
RDS 10 23 2E9
CGS 2 3 220E-12 
EGD 12 0 1 2 1
REGD 12 0 1
VFB 14 0 0 
FFB 1 2 VFB 1 
CGD 13 14 480E-12 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 10 23 DSUB
EL 2 22 1 3 .003
RL 30 23 3
LS  30 23 2E-9
.MODEL Pmod1 PMOS (LEVEL=3 VTO=-1.13 TOX=7.5E-8 NSUB=1E+16 KP=7.5 NFS=1E+11 IS=1E-15 N=10)
.MODEL DCGD D (CJO = 380E-12  VJ = 0.45  M = 0.33 T_ABS=25)
.MODEL DSUB D (IS=.9E-12 N=1.02 RS=0.035 BV=22 CJO=94E-12 VJ=0.45 M=0.33 TT=3E-9)
.MODEL DLIM D (IS=100U N=1 T_ABS=25)
.MODEL Rmod1 RES (TC1=1e-3 TC2=1E-6)
.ENDS

.SIMULATOR DEFAULT


*ZETEX ZXM66P02N8 Spice Model v2.0 Last revision 15/3/07
    *
    .SUBCKT ZXM66P02N8 3 4 5
    *----connections----D G S
    *
    M1 6 20 8 8 MOSMOD
    M2 6 20 8 8 MOSMODS
    RG 41 2 4.7
    RIN 2 8 200E6
    RD 31 6 RDSMOD 0.001
    RS 8 51 RDSMOD 0.009
    RL 3 5 350E6
    C1 2 8 1435E-12
    C2 3 2 940E-12
    C3 15 14 4758E-12 
    C4 16 8 5008E-12
    D1 3 5 DMOD1
    Egt1 2 20 21 8 1
    Vgt1 8 22 1
    Igt1 8 21 1
    Rgt 21 22 RMOD2 1
    S1 2 15 13 14 SMOD1a
    S2 13 15 13 14 SMOD1b
    S3 16 13 8 13 SMOD2a
    S4 16 2 8 13 SMOD2b
    Egs2 13 8 2 8 1
    Eds1 14 8 3 8 1
    LD 3 31 1.3E-9
    LG 4 41 1.2E-9
    LS 5 51 1.2E-9
    .MODEL MOSMOD PMOS VTO=-1.26 IS=1E-15 KP=30.5 PB=1 LAMBDA=4.9E-2
    .MODEL MOSMODS PMOS VTO=-.75 IS=1E-15 KP=0.15 PB=1
    .MODEL DMOD1 D IS=2.5E-11 RS=0.005 N=1.01 IKF=.2 TT=1e-8 BV=25 CJO=5400E-12 
    .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4  VON=-0.75 VOFF=1.75
    .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4  VON=1.75 VOFF=-0.75
    .MODEL SMOD2a VSWITCH RON=1e-2 ROFF=1e4  VON=-1.5 VOFF=-4.5
    .MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4  VON=-4.5 VOFF=-1.5
    .MODEL RDSMOD RES (TC1=3E-3 TC2=3E-6)
    .MODEL RMOD2 RES (TC1=1.195E-3 TC2=3E-6)
    .ENDS
    *
    *$
    *


*---------- DMG9933USD Spice Model ----------
.SUBCKT DMG9933USD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.06732 
RS 30 3 0.001 
RG 20 2 44.9 
CGS 2 3 5.341E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 6.75E-010 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1.391E+005  KP = 20.82  ETA = 0.005556 
+ TOX = 6E-008  NSUB = 1E+016  KAPPA = 0.5405  VTO = -0.9485 
.MODEL DCGD D  CJO = 3.766E-010  VJ = 0.2194  M = 0.4355 
.MODEL DSUB D  IS = 8.7E-009  N = 1.353  RS = 0.08758  BV = 25  CJO = 1E-012  VJ = 0.3188  M = 0.5753 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMG9933USD Spice Model v1.0 Last Revised 2011/2/11


*---------- DMP210DUFB4 Spice Model ----------
.SUBCKT DMP210DUFB4 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 1.438 
RS 30 3 0.001 
RG 20 2 8.6 
CGS 2 3 1.209E-011 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 2E-011 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 8E+005  ETA = 0.001 
+ TOX = 6E-008  NSUB = 1E+016  KP = 0.1751  KAPPA = 29.86  VTO = -0.7543 
.MODEL DCGD D  CJO = 7.994E-012  VJ = 0.6297  M = 0.3605 
.MODEL DSUB D  IS = 3.261E-007  N = 2.5  RS = 0.4415  BV = 22  CJO = 3.868E-012  VJ = 1  M = 0.3722 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMP210DUFB4 Spice Model v1.0 Last Revised 2012/4/27


*---------- DMP21D0UFB Spice Model ----------
.SUBCKT DMP21D0UFB 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.2 
RS 30 3 0.001 
RG 20 2 500 
CGS 2 3 7.5E-011 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 9.5E-011 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1E+006  ETA = 0.001 
+ TOX = 6E-008  NSUB = 1E+016  KP = 2.857  KAPPA = 9.123  VTO = -0.8248 
.MODEL DCGD D  CJO = 3.857E-011  VJ = 0.2478  M = 0.3502 
.MODEL DSUB D  IS = 9.827E-009  N = 1.492  RS = 0.8393  BV = 25  CJO = 1.95E-011  VJ = 0.2986  M = 0.379 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMP21D0UFB Spice Model v1.0 Last Revised 2012/1/13


*---------- DMP21D0UFB4 Spice Model ----------
.SUBCKT DMP21D0UFB4 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.1932 
RS 30 3 0.001 
RG 20 2 195 
CGS 2 3 7.164E-011 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 TOX = 6E-008 NSUB = 1E+016 KP = 2.81 KAPPA = 19.32 VTO = -0.8259 
.MODEL DCGD D CJO = 3.703E-011 VJ = 0.7999 M = 0.6 
.MODEL DSUB D IS = 5.741E-007 N = 2.108 RS = 0.5607 BV = 20 CJO = 1.599E-011 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP21D0UFB4 Spice Model v1.0 Last Revised 2015/9/17



*---------- DMP2018LFK Spice Model ----------
.SUBCKT DMP2018LFK 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.009515 
RS 30 3 0.001 
RG 20 2 6.2 
DESD1 2 5 DESD 
DESD2 3 5 DESD 
CGS 2 3 4.617E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 5.9E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 TOX = 6E-008 
+ NSUB = 1E+016 KP = 136 KAPPA = 1E-012 VTO = -0.8589 
.MODEL DCGD D CJO = 1.71E-009 VJ = 0.07406 M = 0.3216 
.MODEL DSUB D IS = 7.934E-009 N = 1.159 RS = 0.01941 BV = 40 CJO = 1.805E-009 
+ VJ = 0.2466 M = 0.3518 
.MODEL DLIM D IS = 0.0001 
.MODEL DESD D IS = 1.845E-008 N = 59.86 BV = 2.273 
.ENDS
*Diodes DMP2018LFK Spice Model v1.0 Last Revised 2012/9/4


*---------- DMP1245UFCL Spice Model ----------
.SUBCKT DMP1245UFCL 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.02066 
RS 30 3 0.001 
RG 20 2 14.26 
CGS 2 3 1.165E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1.55E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 44.55 KAPPA = 19.32 VTO = -0.7381 
.MODEL DCGD D CJO = 1E-009 VJ = 0.7735 M = 0.4895 
.MODEL DSUB D IS = 3.352E-008 N = 1.222 RS = 0.08392 BV = 10 CJO = 8.153E-010 VJ = 0.8984 M = 0.5258 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP1245UFCL Spice Model v1.0 Last Revised 2015/9/15


*---------- DMP21D0UFD Spice Model ----------
.SUBCKT DMP21D0UFD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.2 
RS 30 3 0.001 
RG 20 2 500 
CGS 2 3 7.5E-011 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 9.5E-011 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1E+006  ETA = 0.001 
+ TOX = 6E-008  NSUB = 1E+016  KP = 2.857  KAPPA = 9.123  VTO = -0.8248 
.MODEL DCGD D  CJO = 3.857E-011  VJ = 0.2478  M = 0.3502 
.MODEL DSUB D  IS = 9.827E-009  N = 1.492  RS = 0.8393  BV = 25  CJO = 1.95E-011  VJ = 0.2986  M = 0.379 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMP21D0UFD Spice Model v1.0 Last Revised 2012/1/13


*---------- DMP1022UFDE Spice Model ----------
.SUBCKT DMP1022UFDE 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.007221 
RS 30 3 0.001 
RG 20 2 8.6 
CGS 2 3 2.328E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 3.1E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 TOX = 6E-008 
+ NSUB = 1E+016 KP = 74.03 KAPPA = 52.83 VTO = -0.8598 
.MODEL DCGD D CJO = 1.939E-009 VJ = 0.5312 M = 0.4755 
.MODEL DSUB D IS = 6.822E-009 N = 1.158 RS = 0.03057 BV = 15 CJO = 3.094E-010 VJ = 0.5406 M = 0.6337 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP1022UFDE Spice Model v1.0 Last Revised 2012/4/16


*---------- DMP21D0UT Spice Model ----------
.SUBCKT DMP21D0UT 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.2 
RS 30 3 0.001 
RG 20 2 500 
CGS 2 3 7.5E-011 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 9.5E-011 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1E+006  ETA = 0.001 
+ TOX = 6E-008  NSUB = 1E+016  KP = 2.857  KAPPA = 9.123  VTO = -0.8248 
.MODEL DCGD D  CJO = 3.857E-011  VJ = 0.2478  M = 0.3502 
.MODEL DSUB D  IS = 9.827E-009  N = 1.492  RS = 0.8393  BV = 25  CJO = 1.95E-011  VJ = 0.2986  M = 0.379 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMP21D0UT Spice Model v1.0 Last Revised 2012/1/13


*---------- DMP2066UFDE Spice Model ----------
.SUBCKT DMP2066UFDE 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.02066 
RS 30 3 0.001 
RG 20 2 10.4 
CGS 2 3 1.463E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 1.36E-009 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1E+006  ETA = 0.001 
+ TOX = 6E-008  NSUB = 1E+016  KP = 42.59  KAPPA = 49.86  VTO = -0.9435 
.MODEL DCGD D  CJO = 5.044E-010  VJ = 0.2  M = 0.3439 
.MODEL DSUB D  IS = 1E-006  N = 1.73  RS = 0.08493  BV = 25  CJO = 9.596E-011  VJ = 0.2  M = 0.4531 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMP2066UFDE Spice Model v1.0 Last Revised 2013/4/30


*---------- DMP21D5UFB4 Spice Model ----------
.SUBCKT DMP21D5UFB4 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.4041 
RS 30 3 0.001 
RG 20 2 14.3 
CGS 2 3 4.178E-011 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 5.7E-011 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1E+006  ETA = 0.001 
+ TOX = 6E-008  NSUB = 1E+016  KP = 1.095  KAPPA = 49.86  VTO = -0.8823 
.MODEL DCGD D  CJO = 1.311E-011  VJ = 0.2302  M = 0.2576 
.MODEL DSUB D  IS = 3E-009  N = 1.688  RS = 0.5  BV = 25  CJO = 6.498E-012  VJ = 0.3007  M = 0.2934 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMP21D5UFB4 Spice Model v1.0 Last Revised 2011/10/27


*---------- DMP22D4UFA Spice Model ----------
.SUBCKT DMP22D4UFA 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.6562 
RS 30 3 0.001 
RG 20 2 400 
CGS 2 3 2.653E-011 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 5.8E-011 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.6965 KAPPA = 32.11 VTO = -0.6305 
.MODEL DCGD D CJO = 1.549E-011 VJ = 0.1652 M = 0.3749 
.MODEL DSUB D IS = 3.478E-007 N = 2.097 RS = 3.705 
+ BV = 25 CJO = 3.247E-012 VJ = 1.719E-014 M = 0.02141 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMP22D4UFA Spice Model v1.0 Last Revised 2012/11/30


*---------- DMP21D5UFD Spice Model ----------
.SUBCKT DMP21D5UFD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.4041 
RS 30 3 0.001 
RG 20 2 14.3 
CGS 2 3 4.178E-011 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 5.7E-011 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1E+006  ETA = 0.001 
+ TOX = 6E-008  NSUB = 1E+016  KP = 1.095  KAPPA = 49.86  VTO = -0.8823 
.MODEL DCGD D  CJO = 1.311E-011  VJ = 0.2302  M = 0.2576 
.MODEL DSUB D  IS = 3E-009  N = 1.688  RS = 0.5  BV = 25  CJO = 6.498E-012  VJ = 0.3007  M = 0.2934 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMP21D5UFD Spice Model v1.0 Last Revised 2012/11/28


*---------- DMP1080UCB4 Spice Model ----------
.SUBCKT DMP1080UCB4 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.03 
RS 30 3 0.001 
RG 20 2 8.92 
CGS 2 3 1.587E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 3.2E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 12.39 KAPPA = 52.83 VTO = -0.7353 
.MODEL DCGD D CJO = 1.382E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 1.164E-009 N = 1.16 RS = 0.1428 BV = 10 CJO = 1.849E-010 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP1080UCB4 Spice Model v1.0 Last Revised 2015/11/11


*---------- DMP2033UCB9 Spice Model ----------
.SUBCKT DMP2033UCB9 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.02422 
RS 30 3 0.001 
RG 20 2 10.37 
CGS 2 3 4.809E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 4.5E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 53.62 KAPPA = 19.32 VTO = -0.8014 
.MODEL DCGD D CJO = 3.182E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 4.143E-009 N = 1.198 RS = 0.03934 BV = 20 CJO = 3.658E-010 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP2033UCB9 Spice Model v1.0 Last Revised 2015/11/11


*---------- DMP1045UFY4 Spice Model ----------
.SUBCKT DMP1045UFY4 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01808 
RS 30 3 0.001 
RG 20 2 13.4 
CGS 2 3 1.058E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 9.1E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 35.11 KAPPA = 19.32 VTO = -0.7328 
.MODEL DCGD D CJO = 1E-009 VJ = 0.587 M = 0.4707 
.MODEL DSUB D IS = 1.513E-008 N = 1.192 RS = 0.09064 
+ BV = 40 CJO = 1.315E-010 VJ = 0.6767 M = 0.9842 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP1045UFY4 Spice Model v1.0 Last Revised 2012/11/28


*---------- DMP2100U Spice Model ----------
.SUBCKT DMP2100U 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.0317 
RS 30 3 0.001 
RG 20 2 251 
CGS 2 3 9.65E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 9E-010 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 2.464E+005  KP = 25.76  ETA = 0.005087 
+ TOX = 6E-008  NSUB = 1E+016  KAPPA = 0.7287  VTO = -0.7669 
.MODEL DCGD D  CJO = 4.12E-010  VJ = 0.1028  M = 0.3062 
.MODEL DSUB D  IS = 2.605E-008  N = 1.315  RS = 0.07863  BV = 20  CJO = 2.196E-010  VJ = 0.2994  M = 0.4305 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMP2100U Spice Model v1.0 Last Revised 2013/1/18


*DIODES_INC_SPICE_MODEL DMP2008UFG 
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=23Jul2013
*VERSION=1



** Imported from: C:UserssuppuluriDesktopDMP2008UFG.txt
.SUBCKT DMP2008UFG 10 20 30 
M1 1 2 3 3  Pmod1
RD 10 1 Rmod1 1E-3
RS 23 3 Rmod1 5E-3
RG 20 22 6
RIN 20 23 2E11
RDS 10 23 6E9
CGS 2 3 6500E-12 
EGD 12 0 1 2 1 
VFB 14 0 0 
FFB 1 2  VFB 1 
CGD 13 14 10500E-12 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 10 23  DSUB
EL 2 22 1 3 0.000017
Rta 30 23 1E-20
*LS  30 23  4n
.MODEL Pmod1 PMOS (LEVEL=3 VTO=-.8 TOX=20E-9 NSUB=1E+16 KP=200 NFS=.18E+12 IS=1E-15 N=10)
.MODEL DCGD D (CJO = 1000E-12  VJ = 0.5  M = 0.43)
.MODEL DSUB D (IS = 15E-10 N=1 RS=0.01 BV=20 CJO=1000p VJ=.45 M=0.5 TT=3E-9)
.MODEL DLIM D (IS=100U N=1)
.MODEL Rmod1 RES (TC1=3.9e-6 TC2=6E-6)
.ENDS

.SIMULATOR DEFAULT


*                (c)  2013 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*---------- DMG2305UX Spice Model ----------
.SUBCKT DMG2305UX 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.02969 
RS 30 3 0.001 
RG 20 2 15.2 
CGS 2 3 7.613E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1.28E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 26.49 KAPPA = 65.74 VTO = -0.8201 
.MODEL DCGD D CJO = 5.79E-010 VJ = 0.2973 M = 0.5774 
.MODEL DSUB D IS = 3.162E-009 N = 1.241 RS = 0.08353 BV = 1E+006 CJO = 5.653E-011 VJ = 0.008286 M = 0.1128 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMG2305UX Spice Model v1.0 Last Revised 2013/10/22


*---------- DMP2006UFG Spice Model ----------
.SUBCKT DMP2006UFG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001238 
RS 30 3 0.001 
RG 20 2 3.74 
CGS 2 3 5.072E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 5E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 
+ TOX = 6E-008 NSUB = 1E+016 KP = 175.7 KAPPA = 109 VTO = -0.848 
.MODEL DCGD D CJO = 5.158E-009 VJ = 0.1101 M = 0.4567 
.MODEL DSUB D IS = 4.484E-008 N = 1.181 RS = 0.006778 
+ BV = 30 CJO = 6.249E-010 VJ = 0.1841 M = 0.4836 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP2006UFG Spice Model v1.0 Last Revised 2014/09/10



*---------- DMG302PU Spice Model ----------
.SUBCKT DMG302PU 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 2.093 
RS 30 3 0.001 
RG 20 2 1970 
CGS 2 3 2.534E-011 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 5.5E-011 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1E+006  ETA = 0.001 
+ TOX = 6E-008  NSUB = 1E+016  KP = 0.4462  KAPPA = 49.86  VTO = -0.8635 
.MODEL DCGD D  CJO = 4.312E-012  VJ = 0.1388  M = 0.2172 
.MODEL DSUB D  IS = 3.518E-010  N = 1.34  RS = 0.5434  BV = 40  CJO = 1.22E-011  VJ = 0.6489  M = 0.363 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMG302PU Spice Model v1.0 Last Revised 2015/3/16


*SYM=POWMOSP
.SUBCKT DMG1013T   10 20 30
*     TERMINALS:  D  G  S
M1   1  2  3  3  PMOS L=0.6U W=47.66m
RD  10  1  300m
RS  30  3  85m
RG  20  2  1
CGS  2  3  57.55p
EGD 12  30  2  1  1
VFB 14  30  0
FFB  2  1  VFB  1
CGD 13 14  22.2p
R1  13  30  1.00
D1  13 12  DLIM
DDG 14 15  DCGD
R2  12 15  1.00
D2  30  15  DLIM
DSD 10  3  DSUB
.MODEL PMOS PMOS LEVEL=3 U0=200 VMAX=40k
+ ETA=0.1m VTO=-0.952 TOX=20n NSUB=2.1e16
.MODEL DCGD D CJO=22.2p VJ=0.150 M=0.320
.MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20.0
+ CJO=20p VJ=0.600 M=0.50
.MODEL DLIM D IS=100U
.ENDS


*---------- DMP1012UCB9 Spice Model ----------
.SUBCKT DMP1012UCB9 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.003332 
RS 30 3 0.001 
RG 20 2 2.6 
CGS 2 3 4.721E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 7.15E-010 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1E+006  ETA = 0.001 
+ TOX = 6E-008  NSUB = 1E+016  KP = 107.4  KAPPA = 49.86  VTO = -0.954 
.MODEL DCGD D  CJO = 3.351E-010  VJ = 0.2  M = 0.1104 
.MODEL DSUB D  IS = 2.487E-010  N = 1.095  RS = 0.01511  BV = 20  CJO = 5.861E-010  VJ = 0.6  M = 0.2823 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMP1012UCB9 Spice Model v1.0 Last Revised 2015/4/27


*---------- DMP1011UCB9 Spice Model ----------
.SUBCKT DMP1011UCB9 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.003332 
RS 30 3 0.001 
RG 20 2 2.6 
CGS 2 3 4.721E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 7.15E-010 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1E+006  ETA = 0.001 
+ TOX = 6E-008  NSUB = 1E+016  KP = 107.4  KAPPA = 49.86  VTO = -0.954 
.MODEL DCGD D  CJO = 3.351E-010  VJ = 0.2  M = 0.1104 
.MODEL DSUB D  IS = 2.487E-010  N = 1.095  RS = 0.01511  BV = 20  CJO = 5.861E-010  VJ = 0.6  M = 0.2823 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMP1011UCB9 Spice Model v1.0 Last Revised 2015/6/30


*---------- DMP1022UFDF Spice Model ----------
.SUBCKT DMP1022UFDF 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.007221 
RS 30 3 0.001 
RG 20 2 8.6 
CGS 2 3 2.328E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 3.1E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 TOX = 6E-008 
+ NSUB = 1E+016 KP = 74.03 KAPPA = 52.83 VTO = -0.8598 
.MODEL DCGD D CJO = 1.939E-009 VJ = 0.5312 M = 0.4755 
.MODEL DSUB D IS = 6.822E-009 N = 1.158 RS = 0.03057 BV = 15 CJO = 3.094E-010 VJ = 0.5406 M = 0.6337 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP1022UFDF Spice Model v1.0 Last Revised 2015/9/21


*---------- DMP2021UFDF Spice Model ----------
.SUBCKT DMP2021UFDF 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.006917 
RS 30 3 0.001 
RG 20 2 12.02 
CGS 2 3 2.686E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 3.8E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 91.34 KAPPA = 19.32 VTO = -0.7199 
.MODEL DCGD D CJO = 1.478E-009 VJ = 0.6094 M = 0.6 
.MODEL DSUB D IS = 2.978E-008 N = 1.118 RS = 0.03405 BV = 20 CJO = 3.453E-010 VJ = 0.6 M = 0.6726 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP2021UFDF Spice Model v1.0 Last Revised 2015/8/18


*---------- DMP2035UFCL Spice Model ----------
.SUBCKT DMP2035UFCL 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01433 
RS 30 3 0.001 
RG 20 2 11.12 
CGS 2 3 1.682E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1.58E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 56.81 KAPPA = 19.32 VTO = -0.8663 
.MODEL DCGD D CJO = 9.774E-010 VJ = 0.6 M = 0.6 
.MODEL DSUB D IS = 9.271E-009 N = 1.204 RS = 0.03691 BV = 20 CJO = 6.425E-011 VJ = 0.6 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP2035UFCL Spice Model v1.0 Last Revised 2015/9/23



*---------- DMP2200UDW Spice Model ----------
.SUBCKT DMP2200UDW 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.1222 
RS 30 3 0.001 
RG 20 2 65 
CGS 2 3 1.384E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 2.6E-010 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1E+006  ETA = 0.001 
+ TOX = 6E-008  NSUB = 1E+016  KP = 4.902  KAPPA = 49.86  VTO = -0.8622 
.MODEL DCGD D  CJO = 1.261E-010  VJ = 0.4  M = 0.4131 
.MODEL DSUB D  IS = 1.448E-009  N = 1.239  RS = 0.437  BV = 30  CJO = 1E-012  VJ = 0.2  M = 0.7859 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMP2200UDW Spice Model v1.0 Last Revised 2015/5/6


*SYM=POWMOSP
.SUBCKT DMG1013UWQ   10 20 30
*     TERMINALS:  D  G  S
M1   1  20  3  3  PMOS L=0.6U W=47.66m
RD  10  1  300m
RS  30  3  85m
CGS  20  3  57.55p
EGD 12  30  20  1  1
VFB 14  30  0
FFB  20  1  VFB  1
CGD 13 14  22.2p
R1  13  30  1.00
D1  13 12  DLIM
DDG 14 15  DCGD
R2  12 15  1.00
D2  30  15  DLIM
DSD 10  3  DSUB
.MODEL PMOS PMOS LEVEL=3 U0=200 VMAX=40k
+ ETA=0.1m VTO=-0.952 TOX=20n NSUB=2.1e16
.MODEL DCGD D CJO=22.2p VJ=0.150 M=0.320
.MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20.0
+ CJO=20p VJ=0.600 M=0.50
.MODEL DLIM D IS=100U
.ENDS

*Diodes DMG1013UWQ  Spice Model v1.0 Last Revised 2016/01/13


*---------- DMP2022LSSQ Spice Model ----------
.SUBCKT DMP2022LSSQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.006258 
RS 30 3 0.001 
RG 20 2 10.89 
CGS 2 3 2.508E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 3.1E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 102.8 KAPPA = 19.32 VTO = -1.375 
.MODEL DCGD D CJO = 1E-009 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 3.189E-010 N = 1.132 RS = 0.01069 BV = 20 CJO = 6.012E-010 VJ = 0.6 M = 0.6 TT=2.423E-08
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP2022LSSQ Spice Model v1.0 Last Revised 2016/1/22


*---------- DMP2038USS Spice Model ----------
.SUBCKT DMP2038USS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.02073 
RS 30 3 0.001 
RG 20 2 10.39 
CGS 2 3 1.384E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1.3E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 44.98 KAPPA = 19.32 VTO = -0.9359 
.MODEL DCGD D CJO = 7.175E-010 VJ = 0.6 M = 0.6 
.MODEL DSUB D IS = 6.359E-007 N = 1.663 RS = 0.09391 BV = 20 CJO = 1.769E-012 VJ = 0.8 M = 0.6  
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP2038USS Spice Model v1.0M Last Revised 2016/1/27


*---------- DMG3415UFY4Q Spice Model ----------
.SUBCKT DMG3415UFY4Q 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.02849 
RS 30 3 0.001 
RG 20 2 251 
CGS 2 3 9.685E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 1.25E-009 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1.206E+005  KP = 26.84  ETA = 0.004426 
+ TOX = 6E-008  NSUB = 1E+016  KAPPA = 0.2906  VTO = -0.7669 
.MODEL DCGD D  CJO = 6.481E-010  VJ = 0.4221  M = 0.4512 
.MODEL DSUB D  IS = 2.605E-008  N = 1.315  RS = 0.07863  BV = 20  CJO = 1.057E-010  VJ = 0.008444  M = 0.2401 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMG3415UFY4Q Spice Model v1.0M Last Revised 2016/1/27


*---------- DMP2035UTS Spice Model ----------
.SUBCKT DMP2035UTS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.02108 
RS 30 3 0.001 
RG 20 2 9.45 
CGS 2 3 1.503E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 1.47E-009 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 8.718E+005  KP = 43.38  ETA = 0.0009338 
+ TOX = 6E-008  NSUB = 1E+016  KAPPA = 7.975  VTO = -0.784 
.MODEL DCGD D  CJO = 6.223E-010  VJ = 0.1355  M = 0.3364 
.MODEL DSUB D  IS = 2.917E-008  N = 1.315  RS = 0.04378  BV = 25  CJO = 6.786E-012  VJ = 1  M = 0.001 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMP2035UTS Spice Model v1.0 Last Revised 2011/2/11


*---------- DMP210DUDJ Spice Model ----------
.SUBCKT DMP210DUDJ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 1.438 
RS 30 3 0.001 
RG 20 2 8.6 
CGS 2 3 1.209E-011 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 2E-011 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 8E+005  ETA = 0.001 
+ TOX = 6E-008  NSUB = 1E+016  KP = 0.1751  KAPPA = 29.86  VTO = -0.7543 
.MODEL DCGD D  CJO = 7.994E-012  VJ = 0.6297  M = 0.3605 
.MODEL DSUB D  IS = 3.261E-007  N = 2.5  RS = 0.4415  BV = 22  CJO = 3.868E-012  VJ = 1  M = 0.3722 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMP210DUDJ Spice Model v1.0 Last Revised 2012/4/27


*---------- DMP1081UCB4 Spice Model ----------
.SUBCKT DMP1081UCB4 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.03 
RS 30 3 0.001 
RG 20 2 8.92 
CGS 2 3 1.587E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 3.2E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 12.39 KAPPA = 52.83 VTO = -0.7353 
.MODEL DCGD D CJO = 1.382E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 1.164E-009 N = 1.16 RS = 0.1428 BV = 10 CJO = 1.849E-010 VJ = 0.8 M = 0.6 TT=6.73E-09
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP1081UCB4 Spice Model v1.0M Last Revised 2016/3/3


*---------- DMP1100UCB4 Spice Model ----------
.SUBCKT DMP1100UCB4 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.05127 
RS 30 3 0.001 
RG 20 2 11.18 
CGS 2 3 4.722E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1.17E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 22.5 KAPPA = 52.83 VTO = -0.7673 
.MODEL DCGD D CJO = 7.698E-010 VJ = 0.7898 M = 0.6 
.MODEL DSUB D IS = 3.826E-009 N = 1.106 RS = 0.2748 BV = 12.8 CJO = 3.949E-011 VJ = 0.7021 M = 0.6 TT=8E-09
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP1100UCB4 Spice Model v1.0M Last Revised 2016/4/12


*---------- DMG2301LK Spice Model ----------
.SUBCKT DMG2301LK 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.08416 
RS 30 3 0.001 
RG 20 2 40.9 
CGS 2 3 1.265E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1.85E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 6.629 KAPPA = 19.32 VTO = -0.6459 
.MODEL DCGD D CJO = 1.177E-010 VJ = 0.611 M = 0.6 
.MODEL DSUB D IS = 0.0001419 N = 4.041 RS = 7.253E-009 BV = 22 CJO = 2.853E-011 VJ = 0.7195 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMG2301LK Spice Model v1.0M Last Revised 2016/4/28


*---------- DMP2170U Spice Model ----------
.SUBCKT DMP2170U 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.03401 
RS 30 3 0.001 
RG 20 2 16.19 
CGS 2 3 2.663E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 4.5E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 13.29 KAPPA = 19.32 VTO = -1.265 
.MODEL DCGD D CJO = 2.367E-010 VJ = 0.1307 M = 0.4276 
.MODEL DSUB D IS = 8.156E-010 N = 1.261 RS = 0.05931 BV = 27 CJO = 5.561E-011 VJ = 0.1742 M = 0.4317 TT=2.7E-09
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP2170U Spice Model v1.0M Last Revised 2016/6/15


*---------- DMP2042UCB4 Spice Model ----------
.SUBCKT DMP2042UCB4 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.02838 
RS 30 3 0.001
RC 20 5 5000 
RG 5 2 23
DDIO 5 3 LEGD2
DDIO2 20 3 LEGD
CGS 2 3 3.6E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1.5E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 24.1 KAPPA = 19.32 VTO = -0.8036 
.MODEL DCGD D CJO = 3.548E-011 VJ = 0.6001 M = 0.8 
.MODEL DSUB D IS = 4.84E-009 N = 1.313 RS = 0.0601 BV = 21.3 CJO = 4.2E-010 VJ = 0.8 M = 0.6 TT = 2.3E-007
.MODEL DLIM D IS = 0.0001 
.MODEL LEGD D IS = 5E-009  N = 1.089  RS = 0.004  BV = 22
.MODEL LEGD2 D IS = 5E-009  N = 1.089  RS = 0.004  BV = 7 
.ENDS
*Diodes DMP2042UCB4 Spice Model v1.0M Last Revised 2016/7/7


*---------- DMG1013TQ Spice Model ----------
.SUBCKT DMG1013TQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.2935 
RS 30 3 0.001 
RG 20 2 161.7 
CGS 2 3 5.5E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 8.5E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8938 
+ TOX = 6E-008 NSUB = 1E+016 KP = 1.666 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 3.045E-011 VJ = 0.7992 M = 0.6 
.MODEL DSUB D IS = 5.645E-009 N = 1.473 RS = 0.9179 BV = 23.7 CJO = 2.5E-011 VJ = 0.7186 M = 0.6022 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMG1013TQ Spice Model v1.0M Last Revised 2016/8/3



*---------- DMP2021UFDE Spice Model ----------
.SUBCKT DMP2021UFDE 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.006917 
RS 30 3 0.001 
RG 20 2 12.02 
CGS 2 3 2.686E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 3.8E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 91.34 KAPPA = 19.32 VTO = -0.7199 
.MODEL DCGD D CJO = 1.478E-009 VJ = 0.6094 M = 0.6 
.MODEL DSUB D IS = 2.978E-008 N = 1.118 RS = 0.03405 BV = 20 CJO = 3.453E-010 VJ = 0.6 M = 0.6726 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP2021UFDE Spice Model v1.0 Last Revised 2015/8/18



*---------- DMP2035UFDF Spice Model ----------
.SUBCKT DMP2035UFDF 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01433 
RS 30 3 0.001 
RG 20 2 11.12 
CGS 2 3 1.682E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1.58E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 56.81 KAPPA = 19.32 VTO = -0.8663 
.MODEL DCGD D CJO = 9.774E-010 VJ = 0.6 M = 0.6 
.MODEL DSUB D IS = 9.271E-009 N = 1.204 RS = 0.03691 BV = 20 CJO = 6.425E-011 VJ = 0.6 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP2035UFDF Spice Model v1.0 Last Revised 2015/9/23



*---------- DMP2040UFDF Spice Model ----------
.SUBCKT DMP2040UFDF 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01579 
RS 30 3 0.001 
RG 20 2 4.88 
CGS 2 3 7.293E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 39.52 KAPPA = 19.32 VTO = -1.151 
.MODEL DCGD D CJO = 5.814E-010 VJ = 0.6 M = 0.6 
.MODEL DSUB D IS = 3.068E-009 N = 1.23 RS = 0.03607 BV = 20 CJO = 1.832E-010 VJ = 0.6 M = 0.6244 TT=9.8E-09
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMP2040UFDF Spice Model v1.0 Last Revised 2015/12/9



*---------- DMP2065UFDB Spice Model ----------
.SUBCKT DMP2065UFDB 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.02969 
RS 30 3 0.001 
RG 20 2 15.2 
CGS 2 3 7.613E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1.28E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 26.49 KAPPA = 65.74 VTO = -0.8201 
.MODEL DCGD D CJO = 5.79E-010 VJ = 0.2973 M = 0.5774 
.MODEL DSUB D IS = 3.162E-009 N = 1.241 RS = 0.08353 BV = 1E+006 CJO = 5.653E-011 VJ = 0.008286 M = 0.1128 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP2065UFDB Spice Model v1.0 Last Revised 2013/10/22


*---------- DMP2088LCP3 Spice Model ----------
.SUBCKT DMP2088LCP3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.054 
RS 30 3 0.001 
RG 20 2 17.94 
CGS 2 3 1.138E-010 
DDIO 2 3 LEGD
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1.1E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 7.376 KAPPA = 19.32 VTO = -1.139 
.MODEL DCGD D CJO = 3.616E-011 VJ = 1 M = 0.7818 
.MODEL DSUB D IS = 5.68E-010 N = 1.345 RS = 0.05418 BV = 22.7 CJO = 1.528E-010 VJ = 1 M = 0.3534 TT=2.8E-09
.MODEL DLIM D IS = 0.0001 
.MODEL LEGD D IS = 5E-009  N = 1.089  RS = 0.004  BV = 14  
.ENDS
*Diodes DMP2088LCP3 Spice Model v1.0M Last Revised 2016/7/6



*---------- DMP2002UPS Spice Model ----------
.SUBCKT DMP2002UPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.0001 
RS 30 3 0.001 
RG 20 2 3.44 
CGS 2 3 9E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 2.2E-008 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 392.9 KAPPA = 52.83 VTO = -1.469 
.MODEL DCGD D CJO = 1.143E-008 VJ = 0.6 M = 0.6 
.MODEL DSUB D IS = 2.821E-009 N = 1.184 RS = 5.952E-009 BV = 22 CJO = 1.797E-009 VJ = 0.8 M = 0.6 TT=3.6E-08
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP2002UPS Spice Model v1.0 Last Revised 2016/9/16



*---------- DMP22M2UPS Spice Model ----------
.SUBCKT DMP22M2UPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.0001 
RS 30 3 0.001 
RG 20 2 3.44 
CGS 2 3 9E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 2.2E-008 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 392.9 KAPPA = 52.83 VTO = -1.469 
.MODEL DCGD D CJO = 1.143E-008 VJ = 0.6 M = 0.6 
.MODEL DSUB D IS = 2.821E-009 N = 1.184 RS = 5.952E-009 BV = 22 CJO = 1.797E-009 VJ = 0.8 M = 0.6 TT=3.6E-08
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP22M2UPS Spice Model v1.0 Last Revised 2016/9/16



*---------- DMP2035UVTQ Spice Model ----------
.SUBCKT DMP2035UVTQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01433 
RS 30 3 0.001 
RG 20 2 11.12 
CGS 2 3 1.682E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1.58E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 56.81 KAPPA = 19.32 VTO = -0.8663 
.MODEL DCGD D CJO = 9.774E-010 VJ = 0.6 M = 0.6 
.MODEL DSUB D IS = 9.271E-009 N = 1.204 RS = 0.03691 BV = 20 CJO = 6.425E-011 VJ = 0.6 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP2035UVTQ Spice Model v1.0 Last Revised 2016/9/26


*---------- DMP1018UCB9 Spice Model ----------
.SUBCKT DMP1018UCB9 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.005771 
RS 30 3 0.001 
RG 20 2 21.23 
CGS 2 3 3.759E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 6E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 58.11 KAPPA = 19.32 VTO = -0.9512 
.MODEL DCGD D CJO = 2.5E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 9.246E-010 N = 1.155 RS = 0.02145 BV = 14 CJO = 3.3E-010 VJ = 0.8 M = 0.6 TT = 3.5E-008 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP1018UCB9 Spice Model v1.0M Last Revised 2016/11/18


*---------- DMP1055USW Spice Model ----------

.SUBCKT DMP1055USW 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.03274 
RS 30 3 0.001 
RG 20 2 4.88 
CGS 2 3 7.966E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 9.5E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 22.87 KAPPA = 19.32 VTO = -0.844 
.MODEL DCGD D CJO = 8.091E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 1.135E-008 N = 1.287 RS = 0.07544 BV = 20 CJO = 1.739E-010 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP1055USW Spice Model v1.0M Last Revised 2016/1/28


*ZETEX BS250P Spice Model v1.0 Last Revised 19/3/03
    *
    .SUBCKT BS250P 3 4 5
    *                D G S
    M1 3 2 5 5 MBS250
    RG 4 2 160
    RL 3 5 1.2E8
    C1 2 5 47E-12
    C2 3 2 10E-12 
    D1 3 5 DBS250
    *
    .MODEL MBS250 PMOS VTO=-3.193 RS=2.041 RD=0.697 IS=1E-15 KP=0.277
    +CBD=105E-12 PB=1 LAMBDA=1.2E-2
    .MODEL DBS250 D IS=2E-13 RS=0.309
    .ENDS BS250P
    *
    *$
    *


*ZETEX ZVP2106A Spice Model v1.1 Last Revised 3/5/00
    *
    .SUBCKT ZVP2106A 3 4 5
    *                D G S
    M1 3 2 5 5 MP2106
    RG 4 2 160
    RL 3 5 1.2E8
    C1 2 5 47E-12
    C2 3 2 10E-12 
    D1 3 5 DP2106
    *
    .MODEL MP2106 PMOS VTO=-3.193 RS=2.041 RD=0.697 IS=1E-15 KP=0.277
    +CBD=105E-12 PB=1 LAMBDA=1.2E-2
    .MODEL DP2106 D IS=2E-13 RS=0.309
    .ENDS ZVP2106A
    *
    *$
    *


*ZETEX ZVP2106G Spice Model v1.1 Last Revised 3/5/00
    *
    .SUBCKT ZVP2106G 3 4 5
    *                D G S
    M1 3 2 5 5 MP2106
    RG 4 2 160
    RL 3 5 1.2E8
    C1 2 5 47E-12
    C2 3 2 10E-12 
    D1 3 5 DP2106
    *
    .MODEL MP2106 PMOS VTO=-3.193 RS=2.041 RD=0.697 IS=1E-15 KP=0.277
    +CBD=105E-12 PB=1 LAMBDA=1.2E-2
    .MODEL DP2106 D IS=2E-13 RS=0.309
    .ENDS ZVP2106G
    *
    *$
    *


*ZETEX ZVP3306A Spice Model v1.1 Last Revised 3/5/00
    *
    .SUBCKT ZVP3306A 3 4 5
    *                D G S
    M1 3 2 5 5 P3306M
    RG 4 2 252
    RL 3 5 1.2E8
    C1 2 5 28E-12
    C2 3 2 3E-12
    D1 3 5 P3306D
    *
    .MODEL P3306M PMOS VTO=-2.875 RS=5.227 RD=7.524 IS=1E-15 KP=.145
    +CBD=35E-12 PB=1 LAMBDA=6.67E-3
    .MODEL P3306D D IS=5E-12 RS=.768
    .ENDS ZVP3306A
    *
    *$
    *


*ZETEX ZVP3306F Spice Model v1.1 Last Revised 3/5/00
    *
    .SUBCKT ZVP3306F 3 4 5
    *                D G S
    M1 3 2 5 5 P3306M
    RG 4 2 252
    RL 3 5 1.2E8
    C1 2 5 28E-12
    C2 3 2 3E-12 
    D1 3 5 P3306D
    *
    .MODEL P3306M PMOS VTO=-2.875 RS=5.227 RD=7.524 IS=1E-15 KP=.145
    +CBD=35E-12 PB=1 LAMBDA=6.67E-3
    .MODEL P3306D D IS=5E-12 RS=.768
    .ENDS ZVP3306F
    *
    *$
    *


*ZETEX ZXMP4A16G Spice Model v1.0 Last Revised 22/6/06
    *
    .SUBCKT ZXMP4A16G 30 40 50
    *                D G S
    M1 6 2 5 5 Pmod L=1.2E-6 W=1.67 
    M2 5 2 5 6 Nmod L=1.4E-6 W=0.96
    RG 4 2 2
    RIN 2 5 1E9
    RD 3 6 Rdmod 0.018
    RL 3 5 3E9
    C1 2 5 40E-12
    C2 3 4 25E-12
    D1 3 5  Dbodymod
    LD 3 30 1E-9
    LG 4 40 2.3E-9
    LS 5 50 2.3E-9
    .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=4E16
    +VTO=-1.8 KP=1.6E-5 RS=.022 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10)
    .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=2E16 
    +TPG=-1 IS=1E-15 N=10)
    .MODEL Dbodymod D (IS=5E-12 RS=.018 IKF=0.1 TRS1=1.5e-3
    +CJO=450e-12 TT=2.2e-8  BV=44)
    .MODEL Rdmod RES (TC1=8e-3 TC2=1.5E-5)
    .ENDS   ZXMP4A16G
    *
    *$
    *


*ZETEX ZXMP4A16K Spice Model v1.0 Last Revised 09/10/06
    *
    .SUBCKT ZXMP4A16K 30 40 50
    *                D G S
    M1 6 2 5 5 Pmod L=1.2E-6 W=1.67 
    M2 5 2 5 6 Nmod L=1.4E-6 W=0.96
    RG 4 2 2
    RIN 2 5 1E9
    RD 3 6 Rdmod 0.018
    RL 3 5 3E9
    C1 2 5 40E-12
    C2 3 4 25E-12
    D1 3 5  Dbodymod
    LD 3 30 1.3E-9
    LG 4 40 2.4E-9
    LS 5 50 2.4E-9
    .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=4E16
    +VTO=-1.8 KP=1.6E-5 RS=.022 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10)
    .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=2E16 
    +TPG=-1 IS=1E-15 N=10)
    .MODEL Dbodymod D (IS=5E-12 RS=.018 IKF=0.1 TRS1=1.5e-3
    +CJO=450e-12 TT=2.2e-8  BV=44)
    .MODEL Rdmod RES (TC1=8e-3 TC2=1.5E-5)
    .ENDS   ZXMP4A16K
    *
    *$
    *


*ZETEX ZXMP6A13F Spice Model v2.0 Last Revised 15/02/05
    *
    .SUBCKT zxmp6a13F 30 40 50
    *                D G S
    M1 6 2 5 5 Pmod L=1.2E-6 W=0.39
    M2 5 2 5 6 Nmod L=1.4E-6 W=0.195
    RG 4 2 3
    RIN 2 5 1E9
    RD 3 6 Rdmod 0.25
    RL 3 5 3E9
    C1 2 5 25E-12
    C2 3 4 15E-12
    D1 3 5  Dbodymod
    LD 3 30 0.5E-9
    LG 4 40 1.0E-9
    LS 5 50 1.0E-9
    .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1e16
    +VTO=-1.5 KP=6e-6 RS=0.005 NFS=12e11 KAPPA=0.01 UO=650 IS=1E-15 N=10)
    .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E16
    +TPG=-1 IS=1E-15 N=10)
    .MODEL Dbodymod D (IS=1e-11 RS=0.05 IKF=0.001966 XTI=-1 TRS1=1.2e-3
    +CJO=3.514e-11  BV=66)
    .MODEL Rdmod RES (TC1=5e-3 TC2=1e-5)
    .ENDS zxmp6a13F
    *
    *$
    *


*ZETEX ZXMP6A13G Spice Model v2.0 Last Revised 15/02/05
    *
    .SUBCKT zxmp6a13G 30 40 50
    *                D G S
    M1 6 2 5 5 Pmod L=1.2E-6 W=0.39
    M2 5 2 5 6 Nmod L=1.4E-6 W=0.195
    RG 4 2 3
    RIN 2 5 1E9
    RD 3 6 Rdmod 0.25
    RL 3 5 3E9
    C1 2 5 25E-12
    C2 3 4 15E-12
    D1 3 5  Dbodymod
    LD 3 30 1E-9
    LG 4 40 2.3E-9
    LS 5 50 2.3E-9
    .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1e16
    +VTO=-1.5 KP=6e-6 RS=0.005 NFS=12e11 KAPPA=0.01 UO=650 IS=1E-15 N=10)
    .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E16
    +TPG=-1 IS=1E-15 N=10)
    .MODEL Dbodymod D (IS=1e-11 RS=0.05 IKF=0.001966 XTI=-1 TRS1=1.2e-3
    +CJO=3.514e-11  BV=66)
    .MODEL Rdmod RES (TC1=5e-3 TC2=1e-5)
    .ENDS zxmp6a13G
    *
    *$
    *


*ZETEX ZXMP6A16DN8 Spice Model v1.0 Last Revised 15/3/2007
    *
    .SUBCKT ZXMP6A16DN8 30 40 50
    *                D G S
    M1 6 2 5 5 Pmod L=1.4E-6 W=2.148
    M2 5 2 5 6 Nmod L=1.4E-6 W=1.579
    RG 4 2 1.9
    RIN 2 5 1E9
    RD 3 6 Rdmod 0.04
    RL 3 5 7E9
    D1 3 5  Dbodymod
    LD 3 30 1.5E-9
    LG 4 40 1.2E-9
    LS 5 50 1.2E-9
    .MODEL Pmod PMOS (LEVEL=3 TOX=10.7E-8 NSUB=6.6E15
    +VTO=-2.24 KP=1.4E-5 RS=.03 NFS=1E11 KAPPA=.005 UO=650 IS=1E-15 N=10)
    .MODEL Nmod NMOS (LEVEL=3 TOX=10.7E-8 NSUB=6.45E15 
    +TPG=-1 IS=1E-15 N=10)
    .MODEL Dbodymod D (IS=5E-12 RS=.02 IKF=0.02 TRS1=1.5e-3 CJO=380e-12 
    +M=0.43 VJ=0.41 TT=3.2e-8  BV=110)
    .MODEL Rdmod RES (TC1=7e-3 TC2=1.0E-5)
    .ENDS
    *
    *$
    *


*ZETEX ZXMP6A16K Spice Model v1.0 Last Revised 15/3/2007
    *
    .SUBCKT ZXMP6A16K 30 40 50
    *                D G S
    M1 6 2 5 5 Pmod L=1.4E-6 W=2.148
    M2 5 2 5 6 Nmod L=1.4E-6 W=1.579
    RG 4 2 1.9
    RIN 2 5 1E9
    RD 3 6 Rdmod 0.04
    RL 3 5 7E9
    D1 3 5  Dbodymod
    LD 3 30 1.3E-9
    LG 4 40 2.4E-9
    LS 5 50 2.4E-9
    .MODEL Pmod PMOS (LEVEL=3 TOX=10.7E-8 NSUB=6.6E15
    +VTO=-2.24 KP=1.4E-5 RS=.03 NFS=1E11 KAPPA=.005 UO=650 IS=1E-15 N=10)
    .MODEL Nmod NMOS (LEVEL=3 TOX=10.7E-8 NSUB=6.45E15 
    +TPG=-1 IS=1E-15 N=10)
    .MODEL Dbodymod D (IS=5E-12 RS=.02 IKF=0.02 TRS1=1.5e-3 CJO=380e-12 
    +M=0.43 VJ=0.41 TT=3.2e-8  BV=110)
    .MODEL Rdmod RES (TC1=7e-3 TC2=1.0E-5)
    .ENDS
    *
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=04/02/2009
*VERSION=3
*PIN_ORDER         Sp1, Gp1, Sp2, Gp2, Dp2, Dp2, Dp1, Dp1
*
.SUBCKT ZXMP6A17DN8 1 2 3 4 5 6 7 8
*Dev1 P-channel
M11 20 21 22 22 Ppmod1 L=1.4E-6 W=1.25
M12 22 21 22 20 Npmod1 L=1.4E-6 W=0.95
RG1 21 27 2.8
RIN1 21 22 1E9
RD1 20 24 Rpmod1 0.028
RS1 22 23 Rpmod1 0.068
RL1 23 24 7E9
C1 21 22 160E-12
D1 24 23  Dpmod1
LD1 24 25 1.5E-9
RP11 7 25 1E-6
RP12 8 25 1E-6
LG1 2 27 1.2E-9
LS1 1 23 1.2E-9
*Dev2 P-channel
M21 60 61 62 62 Ppmod1 L=1.4E-6 W=1.25
M22 62 61 62 60 Npmod1 L=1.4E-6 W=0.95
RG2 61 67 2.8
RIN2 61 62 1E9
RD2 60 64 Rpmod1 0.028
RS2 62 63 Rpmod1 0.068
RL2 63 64 7E9
C2 61 62 160E-12
D2 64 63  Dpmod1
LD2 64 65 1.5E-9
RP21 5 65 1E-6
RP22 6 65 1E-6
LG2 4 67 1.2E-9
LS2 3 63 1.2E-9
.MODEL Ppmod1 PMOS (LEVEL=3 TOX=8.6E-8 NSUB=8E15
+VTO=-2.18 KP=3.5E-5 NFS=3.5E11 KAPPA=0.016 IS=1E-15 N=10)
.MODEL Npmod1 NMOS (LEVEL=3 TOX=8.6E-8 NSUB=6.5E15 
+TPG=-1 IS=1E-15 N=10)
.MODEL Dpmod1 D (IS=2E-12 RS=0.02 IKF=0.1 TRS1=1.5e-3 CJO=85e-12 
+M=0.43 VJ=0.41 TT=3.2e-8  BV=66)
.MODEL Rpmod1 RES (TC1=4.6e-3 TC2=8E-6)
.ENDS
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=25/02/2009
*VERSION=1
*PIN_ORDER         D G S
*
.SUBCKT ZXMP6A17E6 1 2 3
M11 20 21 22 22 Ppmod1 L=1.4E-6 W=1.25
M12 22 21 22 20 Npmod1 L=1.4E-6 W=0.95
RG1 21 27 2.8
RIN1 21 22 1E9
RD1 20 24 Rpmod1 0.028
RS1 22 23 Rpmod1 0.068
RL1 23 24 7E9
C1 21 22 160E-12
D1 24 23  Dpmod1
LD1 1 24 0.3E-9
LG1 2 27 1.2E-9
LS1 3 23 1.2E-9
.MODEL Ppmod1 PMOS (LEVEL=3 TOX=8.6E-8 NSUB=8E15
+VTO=-2.18 KP=3.5E-5 NFS=3.5E11 KAPPA=0.016 IS=1E-15 N=10)
.MODEL Npmod1 NMOS (LEVEL=3 TOX=8.6E-8 NSUB=6.5E15 
+TPG=-1 IS=1E-15 N=10)
.MODEL Dpmod1 D (IS=2E-12 RS=0.02 IKF=0.1 TRS1=1.5e-3 CJO=85e-12 
+M=0.43 VJ=0.41 TT=3.2e-8  BV=66)
.MODEL Rpmod1 RES (TC1=4.6e-3 TC2=8E-6)
.ENDS
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=25/02/2009
*VERSION=1
*PIN_ORDER         D G S
*
.SUBCKT ZXMP6A17G 1 2 3
M11 20 21 22 22 Ppmod1 L=1.4E-6 W=1.25
M12 22 21 22 20 Npmod1 L=1.4E-6 W=0.95
RG1 21 27 2.8
RIN1 21 22 1E9
RD1 20 24 Rpmod1 0.028
RS1 22 23 Rpmod1 0.068
RL1 23 24 7E9
C1 21 22 160E-12
D1 24 23  Dpmod1
LD1 1 24 1.0E-9
LG1 2 27 2.3E-9
LS1 3 23 2.3E-9
.MODEL Ppmod1 PMOS (LEVEL=3 TOX=8.6E-8 NSUB=8E15
+VTO=-2.18 KP=3.5E-5 NFS=3.5E11 KAPPA=0.016 IS=1E-15 N=10)
.MODEL Npmod1 NMOS (LEVEL=3 TOX=8.6E-8 NSUB=6.5E15 
+TPG=-1 IS=1E-15 N=10)
.MODEL Dpmod1 D (IS=2E-12 RS=0.02 IKF=0.1 TRS1=1.5e-3 CJO=85e-12 
+M=0.43 VJ=0.41 TT=3.2e-8  BV=66)
.MODEL Rpmod1 RES (TC1=4.6e-3 TC2=8E-6)
.ENDS
*
*$


*ZETEX ZXMP6A18DN8 Spice Model v2.0 Last Revised 21/2/05
    *
    .SUBCKT ZXMP6A18DN8 30 40 50
    *                D G S
    M1 6 2 5 5 Pmod L=1.2E-6 W=2.64 
    M2 5 2 5 6 Nmod L=1.4E-6 W=1.5 
    RG 4 2 5
    RIN 2 5 1E9
    RD 3 6 Rdmod 0.03
    RL 3 5 3E9
    C1 2 5 25E-12
    C2 3 4 15E-12
    D1 3 5  Dbodymod
    LD 3 30 1.5E-9
    LG 4 40 1.2E-9
    LS 5 50 1.2E-9
    .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=.5E17
    +VTO=-1.83 KP=1.9E-5 RS=.035 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10)
    .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E16
    +TPG=-1 IS=1E-15 N=10)
    .MODEL Dbodymod D (IS=1.6E-12 RS=.022 IKF=1 TRS1=1.5e-3
    +CJO=65e-12  BV=66)
    .MODEL Rdmod RES (TC1=9e-3 TC2=3.9E-5)
    .ENDS   ZXMP6A18DN8
    *
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=25/02/2009
*VERSION=3
*PIN_ORDER         D G S
*
.SUBCKT ZXMP6A18K 1 2 3
M11 20 21 22 22 Ppmod1 L=1.2E-6 W=2.64
M12 22 21 22 20 Npmod1 L=1.4E-6 W=1.5
RG1 27 21 1.3
RIN1 21 22 1E9
RD1 20 24 Rpmod1 0.03
RS1 22 23 1E-6
RL1 23 24 3E9
C11 21 22 500E-12
C12 20 21 15E-12
D1 24 23  Dpmod1
LD1 1 24 1.3E-9
LG1 2 27 2.4E-9
LS1 3 23 2.4E-9
.MODEL Ppmod1 PMOS (LEVEL=3 TOX=5.5E-8 NSUB=.5E17 VTO=-1.83
+KP=1.9E-5 RS=0.035 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10)
.MODEL Npmod1 NMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E16
+TPG=-1 IS=1E-15 N=10)
.MODEL Dpmod1 D (IS=1.6E-12 RS=.022 IKF=1 TRS1=1.5E-3
+CJO=65E-12  BV=66)
.MODEL Rpmod1 RES (TC1=10e-3 TC2=8E-6)
.ENDS
*
*$


*ZETEX ZXMP7A17G Spice Model v1.0 Last Revised 14/3/2007
    *
    .SUBCKT ZXMP7A17G 30 40 50
    *                D G S
    M1 6 2 5 5 Pmod L=1.35E-6 W=1.082
    M2 5 2 5 6 Nmod L=1.8E-6 W=0.6
    RG 4 2 1.9
    RIN 2 5 1E9
    RD 3 6 Rdmod 0.07
    RL 3 5 7E9
    D1 3 5  Dbodymod
    LD 3 30 1.0E-9
    LG 4 40 2.3E-9
    LS 5 50 2.3E-9
    .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=50E15
    +VTO=-1.77 KP=2.5E-5 RS=.05 NFS=2E11 KAPPA=.002 UO=650 IS=1E-15 N=10)
    .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=5.2E15 
    +TPG=-1 IS=1E-15 N=10)
    .MODEL Dbodymod D (IS=5E-12 RS=.02 IKF=0.02 TRS1=1.5e-3 CJO=380e-12 
    +M=0.43 VJ=0.41 TT=2.2e-8  BV=77)
    .MODEL Rdmod RES (TC1=9e-3 TC2=1.5E-5)
    .ENDS
    *
    *$
    *


*ZETEX ZXMP7A17K Spice Model v1.0 Last Revised 14/3/2007
    *
    .SUBCKT ZXMP7A17K 30 40 50
    *                D G S
    M1 6 2 5 5 Pmod L=1.35E-6 W=1.082
    M2 5 2 5 6 Nmod L=1.8E-6 W=0.6
    RG 4 2 1.9
    RIN 2 5 1E9
    RD 3 6 Rdmod 0.07
    RL 3 5 7E9
    D1 3 5  Dbodymod
    LD 3 30 1.3E-9
    LG 4 40 2.4E-9
    LS 5 50 2.4E-9
    .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=50E15
    +VTO=-1.77 KP=2.5E-5 RS=.05 NFS=2E11 KAPPA=.002 UO=650 IS=1E-15 N=10)
    .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=5.2E15 
    +TPG=-1 IS=1E-15 N=10)
    .MODEL Dbodymod D (IS=5E-12 RS=.02 IKF=0.02 TRS1=1.5e-3 CJO=380e-12 
    +M=0.43 VJ=0.41 TT=2.2e-8  BV=77)
    .MODEL Rdmod RES (TC1=9e-3 TC2=1.5E-5)
    .ENDS
    *
    *$
    *


*---------- BSS84DW Spice Model ----------
.SUBCKT BSS84DW 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 2.072 
RS 30 3 0.001 
RG 20 2 1 
CGS 2 3 2.301E-011 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 4.1E-011 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 TOX = 6E-008 NSUB = 1E+016 KP = 0.3083 KAPPA = 32.1 VTO = -1.513 
.MODEL DCGD D CJO = 7.698E-012 VJ = 0.2 M = 0.2205 
.MODEL DSUB D IS = 9.579E-010 N = 1.677 RS = 0.1623  BV = 50 CJO = 9.694E-012 VJ = 0.4761 M = 0.3849 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes BSS84DW Spice Model v1.0 Last Revised 2012/4/17


*---------- BSS84V Spice Model ----------
.SUBCKT BSS84V 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 2.072 
RS 30 3 0.001 
RG 20 2 1 
CGS 2 3 2.301E-011 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 4.1E-011 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 TOX = 6E-008 NSUB = 1E+016 KP = 0.3083 KAPPA = 32.1 VTO = -1.513 
.MODEL DCGD D CJO = 7.698E-012 VJ = 0.2 M = 0.2205 
.MODEL DSUB D IS = 9.579E-010 N = 1.677 RS = 0.1623  BV = 50 CJO = 9.694E-012 VJ = 0.4761 M = 0.3849 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes BSS84V Spice Model v1.0 Last Revised 2012/4/17


*---------- BSS84W Spice Model ----------
.SUBCKT BSS84W 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 2.072 
RS 30 3 0.001 
RG 20 2 1 
CGS 2 3 2.301E-011 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 4.1E-011 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 TOX = 6E-008 NSUB = 1E+016 KP = 0.3083 KAPPA = 32.1 VTO = -1.513 
.MODEL DCGD D CJO = 7.698E-012 VJ = 0.2 M = 0.2205 
.MODEL DSUB D IS = 9.579E-010 N = 1.677 RS = 0.1623  BV = 50 CJO = 9.694E-012 VJ = 0.4761 M = 0.3849 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes BSS84W Spice Model v1.0 Last Revised 2012/4/17


*SRC=DMP58D0SV;DMP58D0SV_DI;MOSFETs P;Enh;50.0V 0.160A 8.00ohms  Diodes Inc. MOSFET
.MODEL DMP58D0SV_DI  PMOS( LEVEL=1 VTO=-2.10 KP=25.0m  GAMMA=2.60
+ PHI=.75  LAMBDA=133u RD=1.12 RS=1.12
+ IS=80.0f  PB=0.800 MJ=0.460 CBD=12.8p 
+ CBS=15.4p  CGSO=16.8n CGDO=14.0n CGBO=239n  )
*   -- Assumes default L=100U W=100U --


*ZETEX BSS84 Spice Model v1.1 Last Revised 3/5/00
    *              
    .SUBCKT BSS84 3 4 5
    * NODES: DRAIN GATE SOURCE
    M1 3 2 5 5 MOD1
    RG 4 2 167
    RL 3 5 50E6
    C1 2 5 26P
    C2 3 2 4P 
    D1 3 5 DIODE1
    *
    .MODEL MOD1 PMOS VTO=-1.709 RS=3.091 RD=0.979 IS=1E-15 KP=0.146
    +CBD=12P PB=1
    .MODEL DIODE1 D IS=1.072E-13 RS=0.527 N=1.077
    .ENDS BSS84
    *
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=25/02/2009
*VERSION=1
*PIN_ORDER         D G S
*
.SUBCKT ZXMP6A17K 1 2 3
M11 20 21 22 22 Ppmod1 L=1.4E-6 W=1.25
M12 22 21 22 20 Npmod1 L=1.4E-6 W=0.95
RG1 21 27 2.8
RIN1 21 22 1E9
RD1 20 24 Rpmod1 0.028
RS1 22 23 Rpmod1 0.068
RL1 23 24 7E9
C1 21 22 160E-12
D1 24 23  Dpmod1
LD1 1 24 1.3E-9
LG1 2 27 2.4E-9
LS1 3 23 2.4E-9
.MODEL Ppmod1 PMOS (LEVEL=3 TOX=8.6E-8 NSUB=8E15
+VTO=-2.18 KP=3.5E-5 NFS=3.5E11 KAPPA=0.016 IS=1E-15 N=10)
.MODEL Npmod1 NMOS (LEVEL=3 TOX=8.6E-8 NSUB=6.5E15 
+TPG=-1 IS=1E-15 N=10)
.MODEL Dpmod1 D (IS=2E-12 RS=0.02 IKF=0.1 TRS1=1.5e-3 CJO=85e-12 
+M=0.43 VJ=0.41 TT=3.2e-8  BV=66)
.MODEL Rpmod1 RES (TC1=4.6e-3 TC2=8E-6)
.ENDS ZXMP6A17K
*
*$


*---------- DMP4051LK3 Spice Model ----------
.SUBCKT DMP4051LK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.02905 
RS 30 3 0.001 
RG 20 2 14.26 
CGS 2 3 9.351E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 6.4E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 
+ TOX = 6E-008 NSUB = 1E+016 KP = 13.82 KAPPA = 36.81 VTO = -1.29 
.MODEL DCGD D CJO = 2.635E-010 VJ = 0.2231 M = 0.365 
.MODEL DSUB D IS = 2.311E-010 N = 1.205 RS = 0.02404 
+ BV = 50 CJO = 8.511E-011 VJ = 0.1768 M = 0.3549 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP4051LK3 Spice Model v1.0 Last Revised 2013/05/05


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=10FEB2011
*VERSION=1
*PIN_ORDER D G S
*
.SUBCKT ZXMP6A17N8 1 2 3
M11 20 21 22 22 Ppmod1 L=1.4E-6 W=1.25
M12 22 21 22 20 Npmod1 L=1.4E-6 W=0.95
RG1 21 2 2.8
RIN1 21 22 1E9
RD1 20 24 Rpmod1 0.028
RS1 22 23 Rpmod1 0.068
RL1 23 24 7E9
C1 21 22 160E-12
D1 24 23  Dpmod1
LD1 1 24 1.3E-9
LS1 3 23 2.4E-9
.MODEL Ppmod1 PMOS (LEVEL=3 TOX=8.6E-8 NSUB=8E15
+VTO=-2.18 KP=3.5E-5 NFS=3.5E11 KAPPA=0.016 IS=1E-15 N=10)
.MODEL Npmod1 NMOS (LEVEL=3 TOX=8.6E-8 NSUB=6.5E15 
+TPG=-1 IS=1E-15 N=10)
.MODEL Dpmod1 D (IS=2E-12 RS=0.02 IKF=0.1 TRS1=1.5e-3 CJO=85e-12 
+M=0.43 VJ=0.41 TT=3.2e-8  BV=66)
.MODEL Rpmod1 RES (TC1=4.6e-3 TC2=8E-6)
.ENDS
*
*$


* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=24/07/2015 *VERSION=1    ** Imported from: C:\Users\siva_uppuluri\Desktop\ZXMP4A57E6\ZXMP4A57E6.txt .SUBCKT ZXMP4A57E6 10 20 30 M1 1 2 3 3  Pmod1 RD 10 1 Rmod1 48E-3 RS 23 3 Rmod1 2E-3 RG 20 22 12 RIN 20 23 2E11 RDS 10 23 2E9 CGS 2 3 900E-12  EGD 12 0 1 2 1 REGD 12 0 1 VFB 14 0 0  FFB 1 2 VFB 1  CGD 13 14 530E-12  R1 13 0 1  D1 12 13  DLIM  DDG 15 14  DCGD  R2 12 15 1  D2 15 0  DLIM  DSD 10 23 DSUB EL 2 22 1 3 .002 LS  30 23 2E-15 .MODEL Pmod1 PMOS (LEVEL=3 VTO=-2.5 TOX=5.5E-8 NSUB=35E+16 KP=15 NFS=1.5E+12 IS=1E-105 N=100) .MODEL DCGD D (CJO = 180E-12  VJ = 0.45  M = 0.33 T_ABS=25) .MODEL DSUB D (IS=20E-13 N=1 RS=0.01 BV=45 CJO=400E-12 VJ=0.6 M=0.4 TT=14E-9 TRS1=2m EG=1.05 IKF=20m) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=1e-4 TC2=1E-6) .ENDS  .SIMULATOR DEFAULT   *                     (c)  2015 Diodes Inc *   The copyright in these models  and  the designs embodied belong *   to Diodes Incorporated (" Zetex ").  They  are  supplied *   free of charge by Zetex for the purpose of research and design *   and may be used or copied intact  (including this notice)  for *   that purpose only.  All other rights are reserved.  The models *   are believed accurate but no condition  or warranty  as to their *   merchantability or fitness for purpose is given and no liability *   in respect of any use is accepted by Diodes Incorporated, its distributors *   or agents. * *   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, *   Oldham, United Kingdom, OL9 9LL *


*---------- DMP4015SSS Spice Model ----------
.SUBCKT DMP4015SSS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.00523 
RS 30 3 1E-006 
RG 20 2 7.77 
CGS 2 3 4E-009 
EGD 12 0 1 2 1 
VFB 14 0 0 
FFB 1 2  VFB 1 
CGD 13 14 3.7E-009 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1E+006  ETA = 0.02012  
+ TOX = 5E-008  NSUB = 1E+016  KP = 82.85  KAPPA = 0.001  VTO = -2.609 
.MODEL DCGD D  CJO = 1.762E-009  VJ = 0.4937  M = 0.3181 
.MODEL DSUB D  IS = 1.247E-011  N = 1.091  RS = 0.004133  BV = 45  CJO = 1.6E-009  VJ = 0.437  M = 0.3036 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMP4015SSS Spice Model v1.0 Last Revised 2015/7/16


*---------- DMP4015SK3 Spice Model ----------
.SUBCKT DMP4015SK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.00523 
RS 30 3 1E-006 
RG 20 2 7.77 
CGS 2 3 4E-009 
EGD 12 0 1 2 1 
VFB 14 0 0 
FFB 1 2  VFB 1 
CGD 13 14 3.7E-009 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1E+006  ETA = 0.02012  
+ TOX = 5E-008  NSUB = 1E+016  KP = 82.85  KAPPA = 0.001  VTO = -2.609 
.MODEL DCGD D  CJO = 1.762E-009  VJ = 0.4937  M = 0.3181 
.MODEL DSUB D  IS = 1.247E-011  N = 1.091  RS = 0.004133  BV = 45  CJO = 1.6E-009  VJ = 0.437  M = 0.3036 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMP4015SK3 Spice Model v1.0 Last Revised 2015/7/16


*---------- DMP4015SPS Spice Model ----------
.SUBCKT DMP4015SPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.00523 
RS 30 3 1E-006 
RG 20 2 7.77 
CGS 2 3 4E-009 
EGD 12 0 1 2 1 
VFB 14 0 0 
FFB 1 2  VFB 1 
CGD 13 14 3.7E-009 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1E+006  ETA = 0.02012  
+ TOX = 5E-008  NSUB = 1E+016  KP = 82.85  KAPPA = 0.001  VTO = -2.609 
.MODEL DCGD D  CJO = 1.762E-009  VJ = 0.4937  M = 0.3181 
.MODEL DSUB D  IS = 1.247E-011  N = 1.091  RS = 0.004133  BV = 45  CJO = 1.6E-009  VJ = 0.437  M = 0.3036 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMP4015SPS Spice Model v1.0 Last Revised 2015/7/16


*---------- DMP4047LFDE Spice Model ----------
.SUBCKT DMP4047LFDE 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01862 
RS 30 3 0.001 
RG 20 2 7.7 
CGS 2 3 1.3E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 8E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 
+ TOX = 6E-008 NSUB = 1E+016 KP = 22.81 KAPPA = 0.00531 VTO = -1.74 
.MODEL DCGD D CJO = 2.751E-010 VJ = 0.4031 M = 0.3067 
.MODEL DSUB D IS = 2.613E-010 N = 1.268 RS = 0.01102 
+ BV = 50 CJO = 1.637E-010 VJ = 0.753 M = 0.6004 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP4047LFDE Spice Model v1.0 Last Revised 2013/04/16


*---------- DMP6180SK3 Spice Model ----------
.SUBCKT DMP6180SK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.04464 
RS 30 3 0.001 
RG 20 2 13 
CGS 2 3 1E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 6.5E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 
+ TOX = 6E-008 NSUB = 1E+016 KP = 10.4 KAPPA = 30.49 VTO = -2.063 
.MODEL DCGD D CJO = 1.881E-010 VJ = 0.6541 M = 0.3655 
.MODEL DSUB D IS = 2.224E-010 N = 1.277 RS = 0.01338 
+ BV = 50 CJO = 1.189E-010 VJ = 0.7738 M = 0.6069 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP6180SK3 Spice Model v1.0 Last Revised 2013/08/07


*---------- DMP4025SFG Spice Model ----------
.SUBCKT DMP4025SFG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.006043 
RS 30 3 0.001 
RG 20 2 6.43 
CGS 2 3 1.554E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1.4E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 
+ TOX = 6E-008 NSUB = 1E+016 KP = 11.66 KAPPA = 9.057 VTO = -1.385 
.MODEL DCGD D CJO = 5.62E-010 VJ = 0.6 M = 0.4221 
.MODEL DSUB D IS = 4.586E-010 N = 1.275 RS = 0.01773 
+ BV = 50 CJO = 2.892E-010 VJ = 0.0947 M = 0.3174 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP4025SFG Spice Model v1.0 Last Revised 2013/08/4


*---------- DMP56D0UV Spice Model ----------
.SUBCKT DMP56D0UV 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 4.03 
RS 30 3 0.001 
RG 20 2 244 
CGS 2 3 4.868E-011 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 7E-011 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.0008262 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.9705 KAPPA = 1E-015 VTO = -0.8369 
.MODEL DCGD D CJO = 1.069E-011 VJ = 0.01866 M = 0.2394 
.MODEL DSUB D IS = 1.878E-007 N = 2.277 RS = 0.3052 BV = 95.86 
+ CJO = 4.824E-012 VJ = 0.1277 M = 0.2668 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP56D0UV Spice Model v1.0 Last Revised 2014/2/20



*---------- DMP4015SK3Q Spice Model ----------
.SUBCKT DMP4015SK3Q 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.00523 
RS 30 3 1E-006 
RG 20 2 7.77 
CGS 2 3 4E-009 
EGD 12 0 1 2 1 
VFB 14 0 0 
FFB 1 2  VFB 1 
CGD 13 14 3.7E-009 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1E+006  ETA = 0.02012  
+ TOX = 5E-008  NSUB = 1E+016  KP = 82.85  KAPPA = 0.001  VTO = -2.609 
.MODEL DCGD D  CJO = 1.762E-009  VJ = 0.4937  M = 0.3181 
.MODEL DSUB D  IS = 1.247E-011  N = 1.091  RS = 0.004133  BV = 45  CJO = 1.6E-009  VJ = 0.437  M = 0.3036 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMP4015SK3Q Spice Model v1.0 Last Revised 2015/7/16


*---------- DMP4015SPSQ Spice Model ----------
.SUBCKT DMP4015SPSQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.00523 
RS 30 3 1E-006 
RG 20 2 7.77 
CGS 2 3 4E-009 
EGD 12 0 1 2 1 
VFB 14 0 0 
FFB 1 2  VFB 1 
CGD 13 14 3.7E-009 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1E+006  ETA = 0.02012  
+ TOX = 5E-008  NSUB = 1E+016  KP = 82.85  KAPPA = 0.001  VTO = -2.609 
.MODEL DCGD D  CJO = 1.762E-009  VJ = 0.4937  M = 0.3181 
.MODEL DSUB D  IS = 1.247E-011  N = 1.091  RS = 0.004133  BV = 45  CJO = 1.6E-009  VJ = 0.437  M = 0.3036 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMP4015SPSQ Spice Model v1.0 Last Revised 2015/7/16


*---------- DMP4015SSSQ Spice Model ----------
.SUBCKT DMP4015SSSQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.00523 
RS 30 3 1E-006 
RG 20 2 7.77 
CGS 2 3 4E-009 
EGD 12 0 1 2 1 
VFB 14 0 0 
FFB 1 2  VFB 1 
CGD 13 14 3.7E-009 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1E+006  ETA = 0.02012  
+ TOX = 5E-008  NSUB = 1E+016  KP = 82.85  KAPPA = 0.001  VTO = -2.609 
.MODEL DCGD D  CJO = 1.762E-009  VJ = 0.4937  M = 0.3181 
.MODEL DSUB D  IS = 1.247E-011  N = 1.091  RS = 0.004133  BV = 45  CJO = 1.6E-009  VJ = 0.437  M = 0.3036 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMP4015SSSQ Spice Model v1.0 Last Revised 2015/7/16


*---------- DMP6023LE Spice Model ----------
.SUBCKT DMP6023LE 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01605 
RS 30 3 0.001 
RG 20 2 4.99 
CGS 2 3 2.839E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1.75E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 56.71 KAPPA = 49.86 VTO = -2.33 
.MODEL DCGD D CJO = 8.252E-010 VJ = 1 M = 0.5463 
.MODEL DSUB D IS = 2.343E-010 N = 1.216 RS = 0.003391 BV = 71.9 CJO = 1.513E-010 VJ = 0.1 M = 0.1851 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP6023LE Spice Model v1.0 Last Revised 2015/6/17


*---------- DMP6023LFG Spice Model ----------
.SUBCKT DMP6023LFG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01605 
RS 30 3 0.001 
RG 20 2 4.99 
CGS 2 3 2.839E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1.75E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 56.71 KAPPA = 49.86 VTO = -2.33 
.MODEL DCGD D CJO = 8.252E-010 VJ = 1 M = 0.5463 
.MODEL DSUB D IS = 2.343E-010 N = 1.216 RS = 0.003391 BV = 71.9 CJO = 1.513E-010 VJ = 0.1 M = 0.1851 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP6023LFG Spice Model v1.0 Last Revised 2015/7/7


*---------- DMP6023LSS Spice Model ----------
.SUBCKT DMP6023LSS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01605 
RS 30 3 0.001 
RG 20 2 4.99 
CGS 2 3 2.839E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1.75E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 56.71 KAPPA = 49.86 VTO = -2.33 
.MODEL DCGD D CJO = 8.252E-010 VJ = 1 M = 0.5463 
.MODEL DSUB D IS = 2.343E-010 N = 1.216 RS = 0.003391 BV = 71.9 CJO = 1.513E-010 VJ = 0.1 M = 0.1851 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP6023LSS Spice Model v1.0 Last Revised 2015/6/17


*---------- DMP4013LFG Spice Model ----------
.SUBCKT DMP4013LFG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.00611 
RS 30 3 0.001 
RG 20 2 4.7 
CGS 2 3 3.639E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 2.7E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 74.6 KAPPA = 19.32 VTO = -1.714 
.MODEL DCGD D CJO = 1E-009 VJ = 0.6616 M = 0.6 
.MODEL DSUB D IS = 1.522E-007 N = 1.682 RS = 1.802E-008 BV = 47 CJO = 8.551E-010 VJ = 0.75 M = 0.6 TT=1E-08
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP4013LFG Spice Model v1.0M Last Revised 2016/4/18



*---------- DMP4047SK3 Spice Model ----------
.SUBCKT DMP4047SK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01862 
RS 30 3 0.001 
RG 20 2 7.7 
CGS 2 3 1.3E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 8E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 
+ TOX = 6E-008 NSUB = 1E+016 KP = 22.81 KAPPA = 0.00531 VTO = -1.74 
.MODEL DCGD D CJO = 2.751E-010 VJ = 0.4031 M = 0.3067 
.MODEL DSUB D IS = 2.613E-010 N = 1.268 RS = 0.01102 
+ BV = 50 CJO = 1.637E-010 VJ = 0.753 M = 0.6004 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP4047SK3 Spice Model v1.0 Last Revised 2015/04/24


*---------- DMPH6050SSD Spice Model ----------
.SUBCKT DMPH6050SSD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.03 
RS 30 3 0.001 
RG 20 2 11.79 
CGS 2 3 1.409E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 8.9E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 24.05 KAPPA = 19.32 VTO = -2.527 
.MODEL DCGD D CJO = 3.258E-010 VJ = 0.7999 M = 0.6 
.MODEL DSUB D IS = 2.383E-010 N = 1.262 RS = 0.009525 BV = 65 CJO = 1.973E-010 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMPH6050SSD Spice Model v1.0 Last Revised 2015/6/17


*---------- DMP4010SK3Q Spice Model ----------
.SUBCKT DMP4010SK3Q 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.00523 
RS 30 3 1E-006 
RG 20 2 7.77 
CGS 2 3 4E-009 
EGD 12 0 1 2 1 
VFB 14 0 0 
FFB 1 2  VFB 1 
CGD 13 14 3.7E-009 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1E+006  ETA = 0.02012  
+ TOX = 5E-008  NSUB = 1E+016  KP = 82.85  KAPPA = 0.001  VTO = -2.609 
.MODEL DCGD D  CJO = 1.762E-009  VJ = 0.4937  M = 0.3181 
.MODEL DSUB D  IS = 1.247E-011  N = 1.091  RS = 0.004133  BV = 45  CJO = 1.6E-009  VJ = 0.437  M = 0.3036 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMP4010SK3Q Spice Model v1.0M Last Revised 2016/1/27


*---------- DMPH6050SK3 Spice Model ----------
.SUBCKT DMPH6050SK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.03 
RS 30 3 0.001 
RG 20 2 11.79 
CGS 2 3 1.409E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 8.9E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 24.05 KAPPA = 19.32 VTO = -2.527 
.MODEL DCGD D CJO = 3.258E-010 VJ = 0.7999 M = 0.6 
.MODEL DSUB D IS = 2.383E-010 N = 1.262 RS = 0.009525 BV = 65 CJO = 1.973E-010 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMPH6050SK3 Spice Model v1.0M Last Revised 2016/1/28


*---------- DMPH6050SK3Q Spice Model ----------
.SUBCKT DMPH6050SK3Q 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.03 
RS 30 3 0.001 
RG 20 2 11.79 
CGS 2 3 1.409E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 8.9E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 24.05 KAPPA = 19.32 VTO = -2.527 
.MODEL DCGD D CJO = 3.258E-010 VJ = 0.7999 M = 0.6 
.MODEL DSUB D IS = 2.383E-010 N = 1.262 RS = 0.009525 BV = 65 CJO = 1.973E-010 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMPH6050SK3Q Spice Model v1.0 Last Revised 2015/6/15


**---------- DMP4047SSD Spice Model ----------
.SUBCKT DMP4047SSD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.0269 
RS 30 3 0.001 
RG 20 2 12.6 
CGS 2 3 1.121E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 
+ TOX = 6E-008 NSUB = 1E+016 KP = 23.02 KAPPA = 53.88 VTO = -1.675 
.MODEL DCGD D CJO = 2.806E-010 VJ = 0.3881 M = 0.3064 
.MODEL DSUB D IS = 2.613E-010 N = 1.268 RS = 0.01102 
+ BV = 50 CJO = 1.89E-010 VJ = 4.441E-016 M = 1 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP4047SSD Spice Model v1.0 Last Revised 2014/02/05


*---------- DMP6110SSSQ Spice Model ----------
.SUBCKT DMP6110SSSQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.04464 
RS 30 3 0.001 
RG 20 2 13 
CGS 2 3 1E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 6.5E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 
+ TOX = 6E-008 NSUB = 1E+016 KP = 10.4 KAPPA = 30.49 VTO = -2.063 
.MODEL DCGD D CJO = 1.881E-010 VJ = 0.6541 M = 0.3655 
.MODEL DSUB D IS = 2.224E-010 N = 1.277 RS = 0.01338 
+ BV = 50 CJO = 1.189E-010 VJ = 0.7738 M = 0.6069 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP6110SSSQ Spice Model v1.0M Last Revised 2016/03/17


*---------- DMP6023LFGQ Spice Model ----------
.SUBCKT DMP6023LFGQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01605 
RS 30 3 0.001 
RG 20 2 4.99 
CGS 2 3 2.839E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1.75E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 56.71 KAPPA = 49.86 VTO = -2.33 
.MODEL DCGD D CJO = 8.252E-010 VJ = 1 M = 0.5463 
.MODEL DSUB D IS = 2.343E-010 N = 1.216 RS = 0.003391 BV = 71.9 CJO = 1.513E-010 VJ = 0.1 M = 0.1851 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP6023LFGQ Spice Model v1.0M Last Revised 2016/3/17


*---------- DMPH4015SK3Q Spice Model ----------
.SUBCKT DMPH4015SK3Q 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.00523 
RS 30 3 1E-006 
RG 20 2 7.77 
CGS 2 3 4E-009 
EGD 12 0 1 2 1 
VFB 14 0 0 
FFB 1 2  VFB 1 
CGD 13 14 3.7E-009 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1E+006  ETA = 0.02012  
+ TOX = 5E-008  NSUB = 1E+016  KP = 82.85  KAPPA = 0.001  VTO = -2.609 
.MODEL DCGD D  CJO = 1.762E-009  VJ = 0.4937  M = 0.3181 
.MODEL DSUB D  IS = 1.247E-011  N = 1.091  RS = 0.004133  BV = 45  CJO = 1.6E-009  VJ = 0.437  M = 0.3036 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMPH4010SK3Q Spice Model v1.0M Last Revised 2016/3/31


*---------- DMP4013LFGQ Spice Model ----------
.SUBCKT DMP4013LFGQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.00611 
RS 30 3 0.001 
RG 20 2 4.7 
CGS 2 3 3.639E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 2.7E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 74.6 KAPPA = 19.32 VTO = -1.714 
.MODEL DCGD D CJO = 1E-009 VJ = 0.6616 M = 0.6 
.MODEL DSUB D IS = 1.522E-007 N = 1.682 RS = 1.802E-008 BV = 47 CJO = 8.551E-010 VJ = 0.75 M = 0.6 TT=1E-08
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP4013LFGQ Spice Model v1.0M Last Revised 2016/4/18



*---------- DMP6350S Spice Model ----------
.SUBCKT DMP6350S 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.2153 
RS 30 3 0.001 
RG 20 2 16.48 
CGS 2 3 2.042E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1.6E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 2.79 KAPPA = 19.32 VTO = -2.031 
.MODEL DCGD D CJO = 6.908E-011 VJ = 0.7999 M = 0.6 
.MODEL DSUB D IS = 1.229E-008 N = 1.701 RS = 0.02915 BV = 68 CJO = 2.66E-011 VJ = 0.8 M = 0.6 TT=4E-09
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP6350S Spice Model v1.0M Last Revised 2016/4/29


*---------- DMP6185SE Spice Model ----------
.SUBCKT DMP6185SE 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.03231 
RS 30 3 0.001 
RG 20 2 16.84 
CGS 2 3 7.103E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 6.5E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 30.52 KAPPA = 19.32 VTO = -0.9885 
.MODEL DCGD D CJO = 2.071E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 1.567E-009 N = 1.266 RS = 0.05804 BV = 25 CJO = 3.071E-011 VJ = 0.8 M = 0.6 TT=1.1E-08
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP6185SE Spice Model v1.0M Last Revised 2016/5/17


*---------- DMP4025SFGQ Spice Model ----------
.SUBCKT DMP4025SFGQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.006043 
RS 30 3 0.001 
RG 20 2 6.43 
CGS 2 3 1.554E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1.4E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 
+ TOX = 6E-008 NSUB = 1E+016 KP = 11.66 KAPPA = 9.057 VTO = -1.385 
.MODEL DCGD D CJO = 5.62E-010 VJ = 0.6 M = 0.4221 
.MODEL DSUB D IS = 4.586E-010 N = 1.275 RS = 0.01773 
+ BV = 50 CJO = 2.892E-010 VJ = 0.0947 M = 0.3174 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP4025SFGQ Spice Model v1.0M Last Revised 2016/06/13


*---------- DMP56D0UFB Spice Model ----------
.SUBCKT DMP56D0UFB 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 4.03 
RS 30 3 0.001 
RG 20 2 244 
CGS 2 3 4.868E-011 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 7E-011 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.0008262 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.9705 KAPPA = 1E-015 VTO = -0.8369 
.MODEL DCGD D CJO = 1.069E-011 VJ = 0.01866 M = 0.2394 
.MODEL DSUB D IS = 1.878E-007 N = 2.277 RS = 0.3052 BV = 95.86 
+ CJO = 4.824E-012 VJ = 0.1277 M = 0.2668 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP56D0UFB Spice Model v1.0 Last Revised 2014/2/20



*---------- DMP510DL Spice Model ----------
.SUBCKT DMP510DL 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 1.961 
RS 30 3 0.001 
RG 20 2 916 
CGS 2 3 2.2E-011 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 3.8E-011 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.2606 KAPPA = 49.86 VTO = -1.522 
.MODEL DCGD D CJO = 6.69E-012 VJ = 1 M = 0.1 
.MODEL DSUB D IS = 9.14E-010 N = 1.637 RS = 0.1748 BV = 66.94 CJO = 1E-015 VJ = 0.1 M = 0.1851 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP510DL Spice Model v1.0 Last Revised 2015/9/24


*---------- DMPH4015SPS Spice Model ----------
.SUBCKT DMPH4015SPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.00523 
RS 30 3 1E-006 
RG 20 2 7.77 
CGS 2 3 4E-009 
EGD 12 0 1 2 1 
VFB 14 0 0 
FFB 1 2  VFB 1 
CGD 13 14 3.7E-009 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1E+006  ETA = 0.02012  
+ TOX = 5E-008  NSUB = 1E+016  KP = 82.85  KAPPA = 0.001  VTO = -2.609 
.MODEL DCGD D  CJO = 1.762E-009  VJ = 0.4937  M = 0.3181 
.MODEL DSUB D  IS = 1.247E-011  N = 1.091  RS = 0.004133  BV = 45  CJO = 1.6E-009  VJ = 0.437  M = 0.3036 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMPH4015SPS Spice Model v1.0M Last Revised 2016/3/31



*---------- DMPH6023SK3Q Spice Model ----------
.SUBCKT DMPH6023SK3Q 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01605 
RS 30 3 0.001 
RG 20 2 4.99 
CGS 2 3 2.839E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1.75E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 56.71 KAPPA = 49.86 VTO = -2.33 
.MODEL DCGD D CJO = 8.252E-010 VJ = 1 M = 0.5463 
.MODEL DSUB D IS = 2.343E-010 N = 1.216 RS = 0.003391 BV = 71.9 CJO = 1.513E-010 VJ = 0.1 M = 0.1851 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMPH6023SK3Q Spice Model v1.0 Last Revised 2016/8/3


*---------- DMPH4015SPSQ Spice Model ----------
.SUBCKT DMPH4015SPSQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.00523 
RS 30 3 1E-006 
RG 20 2 7.77 
CGS 2 3 4E-009 
EGD 12 0 1 2 1 
VFB 14 0 0 
FFB 1 2  VFB 1 
CGD 13 14 3.7E-009 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1E+006  ETA = 0.02012  
+ TOX = 5E-008  NSUB = 1E+016  KP = 82.85  KAPPA = 0.001  VTO = -2.609 
.MODEL DCGD D  CJO = 1.762E-009  VJ = 0.4937  M = 0.3181 
.MODEL DSUB D  IS = 1.247E-011  N = 1.091  RS = 0.004133  BV = 45  CJO = 1.6E-009  VJ = 0.437  M = 0.3036 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMPH4015SPSQ Spice Model v1.0M Last Revised 2016/3/31



*---------- DMP4010SK3 Spice Model ----------
.SUBCKT DMP4010SK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.00523 
RS 30 3 1E-006 
RG 20 2 7.77 
CGS 2 3 4E-009 
EGD 12 0 1 2 1 
VFB 14 0 0 
FFB 1 2  VFB 1 
CGD 13 14 3.7E-009 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1E+006  ETA = 0.02012  
+ TOX = 5E-008  NSUB = 1E+016  KP = 82.85  KAPPA = 0.001  VTO = -2.609 
.MODEL DCGD D  CJO = 1.762E-009  VJ = 0.4937  M = 0.3181 
.MODEL DSUB D  IS = 1.247E-011  N = 1.091  RS = 0.004133  BV = 45  CJO = 1.6E-009  VJ = 0.437  M = 0.3036 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMP4010SK3 Spice Model v1.0M Last Revised 2016/1/27


*---------- DMPH4015SK3 Spice Model ----------
.SUBCKT DMPH4015SK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.00523 
RS 30 3 1E-006 
RG 20 2 7.77 
CGS 2 3 4E-009 
EGD 12 0 1 2 1 
VFB 14 0 0 
FFB 1 2  VFB 1 
CGD 13 14 3.7E-009 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1E+006  ETA = 0.02012  
+ TOX = 5E-008  NSUB = 1E+016  KP = 82.85  KAPPA = 0.001  VTO = -2.609 
.MODEL DCGD D  CJO = 1.762E-009  VJ = 0.4937  M = 0.3181 
.MODEL DSUB D  IS = 1.247E-011  N = 1.091  RS = 0.004133  BV = 45  CJO = 1.6E-009  VJ = 0.437  M = 0.3036 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMPH4015SK3 Spice Model v1.0M Last Revised 2016/3/31


*---------- DMPH6050SPDQ Spice Model ----------
.SUBCKT DMPH6050SPDQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.02655 
RS 30 3 0.001 
RG 20 2 15.97 
CGS 2 3 1.62E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1.25E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 25.05 KAPPA = 19.32 VTO = -2.321 
.MODEL DCGD D CJO = 3.1E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.351E-010 N = 1.253 RS = 0.006785 BV = 69 CJO = 2.217E-010 VJ = 0.8 M = 0.6 TT=7.59E-09
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMPH6050SPDQ Spice Model v1.0M Last Revised 2016/10/7



*---------- DMPH6050SSDQ Spice Model ----------
.SUBCKT DMPH6050SSDQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.02655 
RS 30 3 0.001 
RG 20 2 15.97 
CGS 2 3 1.62E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1.25E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 25.05 KAPPA = 19.32 VTO = -2.321 
.MODEL DCGD D CJO = 3.1E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.351E-010 N = 1.253 RS = 0.006785 BV = 69 CJO = 2.217E-010 VJ = 0.8 M = 0.6 TT=7.59E-09
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMPH6050SSDQ Spice Model v1.0M Last Revised 2016/10/7



*---------- DMPH6050SPD Spice Model ----------
.SUBCKT DMPH6050SPD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.02655 
RS 30 3 0.001 
RG 20 2 15.97 
CGS 2 3 1.62E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1.25E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 25.05 KAPPA = 19.32 VTO = -2.321 
.MODEL DCGD D CJO = 3.1E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.351E-010 N = 1.253 RS = 0.006785 BV = 69 CJO = 2.217E-010 VJ = 0.8 M = 0.6 TT=7.59E-09
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMPH6050SPD Spice Model v1.0M Last Revised 2016/10/7


*---------- DMPH6050SSD Spice Model ----------
.SUBCKT DMPH6050SSD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.02655 
RS 30 3 0.001 
RG 20 2 15.97 
CGS 2 3 1.62E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1.25E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 25.05 KAPPA = 19.32 VTO = -2.321 
.MODEL DCGD D CJO = 3.1E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.351E-010 N = 1.253 RS = 0.006785 BV = 69 CJO = 2.217E-010 VJ = 0.8 M = 0.6 TT=7.59E-09
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMPH6050SSD Spice Model v1.0M Last Revised 2016/10/7


*---------- DMP6110SFDF Spice Model ----------
.SUBCKT DMP6110SFDF 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.04464 
RS 30 3 0.001 
RG 20 2 13 
CGS 2 3 1E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 6.5E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 
+ TOX = 6E-008 NSUB = 1E+016 KP = 10.4 KAPPA = 30.49 VTO = -2.063 
.MODEL DCGD D CJO = 1.881E-010 VJ = 0.6541 M = 0.3655 
.MODEL DSUB D IS = 2.224E-010 N = 1.277 RS = 0.01338 
+ BV = 50 CJO = 1.189E-010 VJ = 0.7738 M = 0.6069 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP6110SFDF Spice Model v1.0 Last Revised 2015/12/03


*---------- DMS2120LFWB Spice Model ----------
.SUBCKT DMS2120LFWB 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.06732 
RS 30 3 0.001 
RG 20 2 44.9 
CGS 2 3 5.341E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 6.75E-010 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1.391E+005  KP = 20.82  ETA = 0.005556 
+ TOX = 6E-008  NSUB = 1E+016  KAPPA = 0.5405  VTO = -0.9485 
.MODEL DCGD D  CJO = 3.766E-010  VJ = 0.2194  M = 0.4355 
.MODEL DSUB D  IS = 8.7E-009  N = 1.353  RS = 0.08758  BV = 25  CJO = 1E-012  VJ = 0.3188  M = 0.5753 
.MODEL DLIM D  IS = 0.0001 
.ENDS



*---------- SBR1U40LP Spice Model ----------
.SUBCKT SBR1U40LP 1 2
DS 1 2 SBR
.MODEL SBR D   IS=3.48u RS=66.4m BV=40.0 IBV=50.0u
+ CJO=928p  M=0.333 N=1.11 TT=8.06n 
.ENDS


*Diodes DMS2120LFWB Spice Model v1.0 Last Revised 2011/11/25


*---------- DMS2220LFDB Spice Model ----------
.SUBCKT DMS2220LFDB 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.06732 
RS 30 3 0.001 
RG 20 2 44.9 
CGS 2 3 5.341E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 6.75E-010 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1.391E+005  KP = 20.82  ETA = 0.005556 
+ TOX = 6E-008  NSUB = 1E+016  KAPPA = 0.5405  VTO = -0.9485 
.MODEL DCGD D  CJO = 3.766E-010  VJ = 0.2194  M = 0.4355 
.MODEL DSUB D  IS = 8.7E-009  N = 1.353  RS = 0.08758  BV = 25  CJO = 1E-012  VJ = 0.3188  M = 0.5753 
.MODEL DLIM D  IS = 0.0001 
.ENDS



*---------- SBR1U40LP Spice Model ----------
.SUBCKT SBR1U40LP 1 2
DS 1 2 SBR
.MODEL SBR D   IS=3.48u RS=66.4m BV=40.0 IBV=50.0u
+ CJO=928p  M=0.333 N=1.11 TT=8.06n 
.ENDS


*Diodes DMS2220LFDB Spice Model v1.0 Last Revised 2011/11/25


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=14FEB2011
*VERSION=1
*PIN_ORDER  ZXMHC6A07T8
* 1=G3         8=G4
* 2=S2S3     7=D3D4
* 3=G2         6=S1S4
* 4=G1         5=D1D2
*
.SUBCKT ZXMHC6A07T8 1 2 3 4 5 6 7 8
X1 5 4 6 P6A13
X2 5 3 2 N6A07
X3 7 1 2 N6A07
X4 7 8 6 P6A13
.ENDS ZXMHC6A07T8
*
.SUBCKT N6A07 3 4 5
M1 6 2 5 5 Nmod1 L=.6E-6 W=0.34
M2 5 2 5 6 Pmod1 L=.6E-6 W=0.24
RG 4 2 4
RIN 2 5 1E12
RD 3 6 Rmod1 0.12
RL 6 5 10E9
C1 2 5 25E-12
C2 3 2 15E-12
D1 5 3  Dmod1
.MODEL Nmod1 NMOS (LEVEL=3 TOX=85E-9 NSUB=1E17 VTO=3.35  XJ=1.6E-6
+KP=9.5E-6 RS=.035 NFS=1.2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10)
.MODEL Pmod1 PMOS (LEVEL=3 TOX=80E-9 NSUB=1E16 XJ=2.3E-6
+TPG=-1 IS=1E-15 N=10)
.MODEL Dmod1 D (IS=0.5E-12 RS=.055  TRS1=1.5e-3
+CJO=71e-12  TT=24E-9 BV=66)
.MODEL Rmod1 RES (TC1=7.3e-3 TC2=1.6E-5)
.ENDS N6A07
*
.SUBCKT P6A13 3 4 5
M1 6 2 5 5 Pmod L=1.2E-6 W=0.39
M2 5 2 5 6 Nmod L=1.4E-6 W=0.195
RG 4 2 3
RIN 2 5 1E9
RD 3 6 Rdmod 0.25
RL 3 5 3E9
C1 2 5 25E-12
C2 3 4 15E-12
D1 3 5  Dbodymod
.MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1e16
+VTO=-1.5 KP=6e-6 RS=0.005 NFS=12e11 KAPPA=0.01 UO=650 IS=1E-15 N=10)
.MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E16
+TPG=-1 IS=1E-15 N=10)
.MODEL Dbodymod D (IS=1e-11 RS=0.05 IKF=0.001966 XTI=-1 TRS1=1.2e-3
+CJO=3.514e-11  BV=66)
.MODEL Rdmod RES (TC1=5e-3 TC2=1e-5)
.ENDS P6A13
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=15FEB2011
*VERSION=1
*PIN_ORDER         
* 1=G3         8=G4
* 2=G2         7=D3D4
* 3=S1S2     6=D2S3
* 4=G1         5=D1S4
*
.SUBCKT ZXMHN6A07T8 1 2 3 4 5 6 7 8
X1 5 4 3 N6A07
X2 6 2 3 N6A07
X3 7 1 6 N6A07
X4 7 8 5 N6A07
.ENDS ZXMHN6A07T
*
.SUBCKT N6A07 3 4 5
M1 6 2 5 5 Nmod1 L=.6E-6 W=0.34
M2 5 2 5 6 Pmod1 L=.6E-6 W=0.24
RG 4 2 4
RIN 2 5 1E12
RD 3 6 Rmod1 0.12
RL 6 5 10E9
C1 2 5 25E-12
C2 3 2 15E-12
D1 5 3  Dmod1
.MODEL Nmod1 NMOS (LEVEL=3 TOX=85E-9 NSUB=1E17 VTO=3.35  XJ=1.6E-6
+KP=9.5E-6 RS=.035 NFS=1.2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10)
.MODEL Pmod1 PMOS (LEVEL=3 TOX=80E-9 NSUB=1E16 XJ=2.3E-6
+TPG=-1 IS=1E-15 N=10)
.MODEL Dmod1 D (IS=0.5E-12 RS=.055  TRS1=1.5e-3
+CJO=71e-12  TT=24E-9 BV=66)
.MODEL Rmod1 RES (TC1=7.3e-3 TC2=1.6E-5)
.ENDS N6A07
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=15FEB2011
*VERSION=1
*PIN_ORDER  ZXMHC6A07T8
* 1=N1G            8=P1G
* 2=N1D/P1D     7=P1S/P2S
* 3=N1S/P2S     6=N2D/P2D
* 4=N2G            5=P2G
*
.SUBCKT ZXMHC6A07N8 1 2 3 4 5 6 7 8
X1 2 8 7 P6A13
X2 2 1 3 N6A07
X3 6 4 3 N6A07
X4 6 5 7 P6A13
.ENDS ZXMHC6A07N8
*
.SUBCKT N6A07 3 4 5
M1 6 2 5 5 Nmod1 L=.6E-6 W=0.34
M2 5 2 5 6 Pmod1 L=.6E-6 W=0.24
RG 4 2 4
RIN 2 5 1E12
RD 3 6 Rmod1 0.12
RL 6 5 10E9
C1 2 5 25E-12
C2 3 2 15E-12
D1 5 3  Dmod1
.MODEL Nmod1 NMOS (LEVEL=3 TOX=85E-9 NSUB=1E17 VTO=3.35  XJ=1.6E-6
+KP=9.5E-6 RS=.035 NFS=1.2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10)
.MODEL Pmod1 PMOS (LEVEL=3 TOX=80E-9 NSUB=1E16 XJ=2.3E-6
+TPG=-1 IS=1E-15 N=10)
.MODEL Dmod1 D (IS=0.5E-12 RS=.055  TRS1=1.5e-3
+CJO=71e-12  TT=24E-9 BV=66)
.MODEL Rmod1 RES (TC1=7.3e-3 TC2=1.6E-5)
.ENDS N6A07
*
.SUBCKT P6A13 3 4 5
M1 6 2 5 5 Pmod L=1.2E-6 W=0.39
M2 5 2 5 6 Nmod L=1.4E-6 W=0.195
RG 4 2 3
RIN 2 5 1E9
RD 3 6 Rdmod 0.25
RL 3 5 3E9
C1 2 5 25E-12
C2 3 4 15E-12
D1 3 5  Dbodymod
.MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1e16
+VTO=-1.5 KP=6e-6 RS=0.005 NFS=12e11 KAPPA=0.01 UO=650 IS=1E-15 N=10)
.MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E16
+TPG=-1 IS=1E-15 N=10)
.MODEL Dbodymod D (IS=1e-11 RS=0.05 IKF=0.001966 XTI=-1 TRS1=1.2e-3
+CJO=3.514e-11  BV=66)
.MODEL Rdmod RES (TC1=5e-3 TC2=1e-5)
.ENDS P6A13
*
*$


*ZETEX ZXMHC3A01T8 Spice Model v1.0 Last Revised 8/7/05
    *
    .SUBCKT ZXMHC3A01T8 51 52 53 54 55 56 57 58
    *connections
    *51=pin1=G3
    *52=pin2=S2,S3
    *53=pin3=G2
    *54=pin4=G1
    *55=pin5=D1,D2
    *56=pin6=S1,S4
    *57=pin7=D3,D4
    *58=pin8=G4
    *
    L1 1 51 2.3e-9
    L2a 62 2 1.3e-9
    L2b 72 2 1.3e-9
    L2c 2 52 1e-9
    L3 3 53 2.3e-9
    L4 4 54 2.3e-9
    L5 5 55 1.5e-9
    L6a 66 6 1.3e-9
    L6b 76 6 1.3e-9
    L6c 6 56 1e-9
    L7 7 57 1.5e-9
    L8 8 58 2.3e-9
    M11 16 12 62 62 Nnmod
    M12 62 12 62 16 Npmod
    RG1 3 12 5
    RIN1 12 62 1E12
    RD1 5 16 Nrmod 0.08
    RL1 5 62 3E9
    C11 12 62 8.5E-12
    C21 5 3 3E-12
    D11 62 5  Ndmod
    M21 26 22 72 72 Nnmod
    M22 72 22 72 26 Npmod
    RG2 1 22 5
    RIN2 22 72 1E12
    RD2 7 26 Nrmod 0.08
    RL2 7 72 3E9
    C12 22 72 8.5E-12
    C22 7 1 3E-12
    D12 72 7  Ndmod
    M31 36 32 66 66 Ppmod
    M32 66 32 66 36 Pnmod
    RG3 4 32 10
    RIN3 32 66 1E9
    RD3 5 36 Prmod 0.05
    RL3 5 66 3E9
    C13 32 66 8.5E-12
    C23 5 4 5E-12
    D13 5 66  Pdmod
    M41 46 42 76 76 Ppmod
    M42 76 42 76 46 Pnmod
    RG4 8 42 10
    RIN4 42 76 1E9
    RD4 7 46 Prmod 0.05
    RL4 76 7 3E9
    C14 42 76 8.5E-12
    C24 7 8 5E-12
    D14 7 76  Pdmod
    .MODEL Nnmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=5E17 L=1.16E-6 W=0.28  VTO=2.3
    +KP=15E-5 RS=.045 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10)
    .MODEL Npmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1.5E16 L=1.3E-6 W=0.13  
    +TPG=-1 IS=1E-15 N=10)
    .MODEL Ndmod D (IS=6E-13 RS=.025 IKF=0.1 TRS1=1.5e-3
    +CJO=85e-12  BV=33)
    .MODEL Nrmod RES (TC1=4.2e-3 TC2=1E-5)
    .MODEL Ppmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E17 L=1.2E-6 W=0.33 
    +VTO=-1.9 KP=2E-5 RS=.05 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10)
    .MODEL Pnmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=2E16 L=1.4E-6 W=0.19 
    +TPG=-1 IS=1E-15 N=10)
    .MODEL Pdmod D (IS=6E-13 RS=.025 IKF=0.1 TRS1=1.5e-3
    +CJO=65e-12  BV=33)
    .MODEL Prmod RES (TC1=5.5e-3 TC2=1.5E-5)
    .ENDS 
    *
    *$
    *


*---------- DMHC3025LSD Spice Model ----------

*NMOS
.SUBCKT DMHC3025LSD_NMOS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01437 
RS 30 3 0.001 
RG 20 2 1.84 
CGS 2 3 4.55E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 4.1E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 2.222 
+ TOX = 6E-008 NSUB = 1E+017 KP = 35.61 KAPPA = 1E-015 U0 = 400 
.MODEL DCGD D CJO = 2.222E-010 VJ = 0.2975 M = 0.3378 
.MODEL DSUB D IS = 2.278E-010 N = 1.242 RS = 0.007361 
+ BV = 35 CJO = 4.795E-011 VJ = 0.3436 M = 0.5232 
.MODEL DLIM D IS = 0.0001 
.ENDS


*PMOS

.SUBCKT DMHC3025LSD_PMOS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01769 
RS 30 3 0.001 
RG 20 2 10.8 
CGS 2 3 5.834E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 3.85E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 TOX = 6E-008 
+ NSUB = 1E+016 KP = 8.945 KAPPA = 11.93 VTO = -1.877 
.MODEL DCGD D CJO = 1.097E-010 VJ = 1 M = 0.24 
.MODEL DSUB D IS = 2.613E-010 N = 1.268 RS = 0.01102 BV = 50 
+ CJO = 1.637E-010 VJ = 0.753 M = 0.6004 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMHC3025LSD Spice Model v1.0 Last Revised 2013/4/17


*---------- DMHC10H170SFJ Spice Model ----------

*NMOS
.SUBCKT DMHC10H170SFJ_NMOS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.1083 
RS 30 3 1E-008 
RG 20 2 1.37 
CGS 2 3 1.07E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 3.5E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.715 
+ TOX = 6E-008 NSUB = 1E+016 KP = 20.25 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 2.221E-010 VJ = 0.1 M = 0.4408 
.MODEL DSUB D IS = 2.405E-010 N = 1.267 RS = 0.006864 BV = 116 CJO = 2.222E-010 VJ = 0.1225 M = 0.5115 
.MODEL DLIM D IS = 0.0001 
.ENDS


*PMOS
.SUBCKT DMHC10H170SFJ_P 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.1739 
RS 30 3 0.001 
RG 20 2 12.5 
CGS 2 3 1.213E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 4E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 
+ TOX = 6E-008 NSUB = 1E+016 KP = 12.42 KAPPA = 61.41 VTO = -2.193 
.MODEL DCGD D CJO = 9.262E-011 VJ = 0.7916 M = 0.3376 
.MODEL DSUB D IS = 3.112E-009 N = 1.487 RS = 0.008305 BV = 150 
+ CJO = 1.637E-010 VJ = 0.753 M = 0.6004 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMHC10H170SFJ Spice Model v1.0 Last Revised 2016/1/5



*---------- DMHC6070LSD Spice Model ----------

*NMOS

.SUBCKT DMHC6070LSD_N 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.04411 
RS 30 3 0.001 
RG 20 2 1.31 
CGS 2 3 7.136E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 3.4E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.463 
+ TOX = 6E-008 NSUB = 1E+016 KP = 15.76 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.389E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.333E-010 N = 1.31 RS = 0.01036 BV = 60 CJO = 8.659E-011 VJ = 0.706 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS

*PMOS

*---------- DMHC6070LSD_P Spice Model ----------
.SUBCKT DMHC6070LSD_P 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.1006 
RS 30 3 0.001 
RG 20 2 13.07 
CGS 2 3 5.928E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 2.5E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 6.038 KAPPA = 19.32 VTO = -2.241 
.MODEL DCGD D CJO = 8.101E-011 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 4.484E-010 N = 1.368 RS = 0.02186 BV = 60 CJO = 7.164E-011 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMHC6070LSD Spice Model v1.0M Last Revised 2016/4/8


*---------- DMG4710SSS Spice Model ----------
.SUBCKT DMG4710SSS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.007253 
RS 30 3 0.001 
RG 20 2 2.68 
CGS 2 3 1.769E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 1.666E-009 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
D3 3 10  DS 
D4 3 10  DL 
D5 3 16  DR 
D6 10 16  DB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 4.791E+005  ETA = 4.441E-017  VTO = 1.856 
+ TOX = 6E-008  NSUB = 3.989E+016  KP = 84.87  KAPPA = 100  U0 = 154.9 
.MODEL DCGD D  CJO = 7.729E-010  VJ = 0.06542  M = 0.3396 
.MODEL DLIM D  IS = 4.441E-010 
.MODEL DS D  IS = 7.339E-010  N = 1.331  RS = 0.0311 
.MODEL DL D  IS = 8.12E-006  N = 1.142  RS = 0.03216  VJ = 0.188  CJO = 2.828E-010  M = 0.4555  TT = 1.595E-008 
.MODEL DR D  IS = 1E-006  N = 1.178 
.MODEL DB D  IS = 1E-011  N = 1 
.ENDS
*Diodes DMG4710SSS Spice Model v1.0 Last Revised 2010/11/9


*---------- DMG4712SSS Spice Model ----------
.SUBCKT DMG4712SSS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.01 
RS 30 3 0.001 
RG 20 2 1.3 
CGS 2 3 2.268E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 1.297E-009 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
D3 3 10  DS 
D4 3 10  DL 
D5 3 16  DR 
D6 10 16  DB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 9.356E+005  ETA = 4.441E-017  VTO = 1.817 
+ TOX = 6E-008  NSUB = 4.849E+016  KP = 150  KAPPA = 138.4  U0 = 400 
.MODEL DCGD D  CJO = 4.894E-010  VJ = 0.01098  M = 0.1971 
.MODEL DLIM D  IS = 4.441E-010 
.MODEL DS D  IS = 2.502E-010  N = 1.063  RS = 0.03357 
.MODEL DL D  IS = 1.094E-005  N = 1.118  RS = 0.04796  VJ = 0.2303  CJO = 6.6E-010  M = 0.6461  TT = 1.595E-008 
.MODEL DR D  IS = 1E-015  N = 1.178 
.MODEL DB D  IS = 1E-011  N = 1 
.ENDS
*Diodes DMG4712SSS Spice Model v1.0 Last Revised 2010/10/25


*---------- DMG4932LSD Spice Model ----------

*NMOS_Q1
.SUBCKT DMG4932LSD_Q1 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.007253 
RS 30 3 0.001 
RG 20 2 2.68 
CGS 2 3 1.769E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 1.666E-009 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
D3 3 10  DS 
D4 3 10  DL 
D5 3 16  DR 
D6 10 16  DB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 4.791E+005  ETA = 4.441E-017  VTO = 1.856 
+ TOX = 6E-008  NSUB = 3.989E+016  KP = 84.87  KAPPA = 100  U0 = 154.9 
.MODEL DCGD D  CJO = 7.729E-010  VJ = 0.06542  M = 0.3396 
.MODEL DLIM D  IS = 4.441E-010 
.MODEL DS D  IS = 7.339E-010  N = 1.331  RS = 0.0311 
.MODEL DL D  IS = 8.12E-006  N = 1.142  RS = 0.03216  VJ = 0.188  CJO = 2.828E-010  M = 0.4555  TT = 1.595E-008 
.MODEL DR D  IS = 1E-006  N = 1.178 
.MODEL DB D  IS = 1E-011  N = 1 
.ENDS


*NMOS_Q2
.SUBCKT DMG4932LSD_Q2 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.005805 
RS 30 3 0.001 
RG 20 2 1.32 
CGS 2 3 6.922E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 9.2E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0.0143  VTO = 2.028 
+ TOX = 6E-008  NSUB = 1E+017  KP = 21.95  KAPPA = 105  U0 = 200 
.MODEL DCGD D  CJO = 4.611E-010  VJ = 0.3568  M = 0.4267 
.MODEL DSUB D  IS = 2.567E-010  N = 1.254  RS = 0.01257  BV = 35  CJO = 8.267E-011  VJ = 0.4558  M = 0.5515 
.MODEL DLIM D  IS = 0.0001 
.ENDS

*Diodes DMG4932LSD Spice Model v1.0 Last Revised 2011/6/20


*---------- DMS3015SSS Spice Model ----------
.SUBCKT DMS3015SSS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.00327 
RS 30 3 0.001 
RG 20 2 1.48 
CGS 2 3 1.174E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 1.297E-009 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
D3 3 10  DS 
D4 3 10  DL 
D5 3 16  DR 
D6 10 16  DB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0.01379  VTO = 1.824 
+ TOX = 6E-008  NSUB = 4.849E+016  KP = 64.51  KAPPA = 1E-015  U0 = 400 
.MODEL DCGD D  CJO = 7.171E-010  VJ = 0.2386  M = 0.3999 
.MODEL DLIM D  IS = 4.441E-010 
.MODEL DS D  IS = 1.011E-012  N = 0.9  RS = 0.007376 
.MODEL DL D  IS = 1.416E-007  N = 0.8743  RS = 0.2205  VJ = 0.5878  CJO = 4.376E-010  M = 0.9 
.MODEL DR D  IS = 1.3E-006  N = 0.6 
.MODEL DB D  IS = 2.239E-008  N = 0.6 
.ENDS
*Diodes DMS3015SSS Spice Model v1.0 Last Revised 2011/3/28


*---------- DMS3014SSS Spice Model ----------
.SUBCKT DMS3014SSS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.01 
RS 30 3 0.001 
RG 20 2 1.3 
CGS 2 3 2.268E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 1.297E-009 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
D3 3 10  DS 
D4 3 10  DL 
D5 3 16  DR 
D6 10 16  DB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 9.356E+005  ETA = 4.441E-017  VTO = 1.817 
+ TOX = 6E-008  NSUB = 4.849E+016  KP = 150  KAPPA = 138.4  U0 = 400 
.MODEL DCGD D  CJO = 4.894E-010  VJ = 0.01098  M = 0.1971 
.MODEL DLIM D  IS = 4.441E-010 
.MODEL DS D  IS = 2.502E-010  N = 1.063  RS = 0.03357 
.MODEL DL D  IS = 1.094E-005  N = 1.118  RS = 0.04796  VJ = 0.2303  CJO = 6.6E-010  M = 0.6461  TT = 1.595E-008 
.MODEL DR D  IS = 1E-015  N = 1.178 
.MODEL DB D  IS = 1E-011  N = 1 
.ENDS
*Diodes DMS3014SSS Spice Model v1.0 Last Revised 2010/11/10


*---------- DMS3016SSS Spice Model ----------
.SUBCKT DMS3016SSS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.007253 
RS 30 3 0.001 
RG 20 2 2.68 
CGS 2 3 1.769E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 1.666E-009 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
D3 3 10  DS 
D4 3 10  DL 
D5 3 16  DR 
D6 10 16  DB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 4.791E+005  ETA = 4.441E-017  VTO = 1.856 
+ TOX = 6E-008  NSUB = 3.989E+016  KP = 84.87  KAPPA = 100  U0 = 154.9 
.MODEL DCGD D  CJO = 7.729E-010  VJ = 0.06542  M = 0.3396 
.MODEL DLIM D  IS = 4.441E-010 
.MODEL DS D  IS = 7.339E-010  N = 1.331  RS = 0.0311 
.MODEL DL D  IS = 8.12E-006  N = 1.142  RS = 0.03216  VJ = 0.188  CJO = 2.828E-010  M = 0.4555  TT = 1.595E-008 
.MODEL DR D  IS = 1E-006  N = 1.178 
.MODEL DB D  IS = 1E-011  N = 1 
.ENDS
*Diodes DMS3016SSS Spice Model v1.0 Last Revised 2010/11/10


*---------- DMS3017SSD Spice Model ----------

*NMOS_Q1
.SUBCKT DMS3017SSD_Q1 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.00327 
RS 30 3 0.001 
RG 20 2 1.48 
CGS 2 3 1.174E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 1.297E-009 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
D3 3 10  DS 
D4 3 10  DL 
D5 3 16  DR 
D6 10 16  DB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0.01379  VTO = 1.824 
+ TOX = 6E-008  NSUB = 4.849E+016  KP = 64.51  KAPPA = 1E-015  U0 = 400 
.MODEL DCGD D  CJO = 7.171E-010  VJ = 0.2386  M = 0.3999 
.MODEL DLIM D  IS = 4.441E-010 
.MODEL DS D  IS = 1.011E-012  N = 0.9  RS = 0.007376 
.MODEL DL D  IS = 1.416E-007  N = 0.8743  RS = 0.2205  VJ = 0.5878  CJO = 4.376E-010  M = 0.9 
.MODEL DR D  IS = 1.3E-006  N = 0.6 
.MODEL DB D  IS = 2.239E-008  N = 0.6 
.ENDS


*NMOS_Q2
.SUBCKT DMS3017SSD_Q2 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.01149 
RS 30 3 0.001002 
RG 20 2 1.13 
CGS 2 3 4.216E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 4.55E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8.276E+005  ETA = 0.02587  VTO = 2.098 
+ TOX = 6.045E-008  NSUB = 1.406E+017  KP = 34.37  KAPPA = 1E-015  U0 = 4.441E-010 
.MODEL DCGD D  CJO = 2.453E-010  VJ = 0.1563  M = 0.3026 
.MODEL DSUB D  IS = 1.188E-009  N = 1.345  RS = 0.004578 
+ BV = 35  CJO = 1.739E-010  VJ = 0.4139  M = 0.4368 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMS3017SSD Spice Model v1.0 Last Revised 2011/6/27


*---------- DMS3019SSD Spice Model ----------

*NMOS_Q1
.SUBCKT DMS3019SSD_Q1 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.007253 
RS 30 3 0.001 
RG 20 2 2.68 
CGS 2 3 1.769E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 1.666E-009 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
D3 3 10  DS 
D4 3 10  DL 
D5 3 16  DR 
D6 10 16  DB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 4.791E+005  ETA = 4.441E-017  VTO = 1.856 
+ TOX = 6E-008  NSUB = 3.989E+016  KP = 84.87  KAPPA = 100  U0 = 154.9 
.MODEL DCGD D  CJO = 7.729E-010  VJ = 0.06542  M = 0.3396 
.MODEL DLIM D  IS = 4.441E-010 
.MODEL DS D  IS = 7.339E-010  N = 1.331  RS = 0.0311 
.MODEL DL D  IS = 8.12E-006  N = 1.142  RS = 0.03216  VJ = 0.188  CJO = 2.828E-010  M = 0.4555  TT = 1.595E-008 
.MODEL DR D  IS = 1E-006  N = 1.178 
.MODEL DB D  IS = 1E-011  N = 1 
.ENDS


*NMOS_Q2
.SUBCKT DMS3019SSD_Q2 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.01149 
RS 30 3 0.001002 
RG 20 2 1.13 
CGS 2 3 4.216E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 4.55E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8.276E+005  ETA = 0.02587  VTO = 2.098 
+ TOX = 6.045E-008  NSUB = 1.406E+017  KP = 34.37  KAPPA = 1E-015  U0 = 4.441E-010 
.MODEL DCGD D  CJO = 2.453E-010  VJ = 0.1563  M = 0.3026 
.MODEL DSUB D  IS = 1.188E-009  N = 1.345  RS = 0.004578 
+ BV = 35  CJO = 1.739E-010  VJ = 0.4139  M = 0.4368 
.MODEL DLIM D  IS = 0.0001 
.ENDS

*Diodes DMS3019SSD Spice Model v1.0 Last Revised 2011/6/20


*ZETEX FZT1047A Spice Model v1.0 Last Revised 18/3/97
    *
    .MODEL FZT1047A  NPN IS=9.73E-13  NF=1.0  BF=550  IKF=8.0  VAF=120
    +               ISE=2.6E-13  NE=1.38  NR=1.0  BR=400  IKR=5  VAR=15
    +               ISC=8E-13  NC=1.4  RB=0.1  RE=0.017  RC=0.010 
    +               CJC=195.4E-12  CJE=540.4E-12  MJC=0.257  MJE=0.359
    +               VJC=0.390  VJE=0.753  TF=450E-12  TR=1.2E-9 
    *
    *$
    *


*ZETEX FCX1047A Spice Model v1.0 Last Revised 3/1/03
    *
    .MODEL FCX1047A  NPN IS=9.73E-13  NF=1.0  BF=550  IKF=8.0  VAF=120
    +               ISE=2.6E-13  NE=1.38  NR=1.0  BR=400  IKR=5  VAR=15
    +               ISC=8E-13  NC=1.4  RB=0.1  RE=0.017  RC=0.010 
    +               CJC=195.4E-12  CJE=540.4E-12  MJC=0.257  MJE=0.359
    +               VJC=0.390  VJE=0.753  TF=450E-12  TR=1.2E-9 
    *
    *$
    *


*
*ZETEX ZXTN25012EZ Spice model v1.0 Last revision 14/01/08
*
.MODEL ZXTN25012EZ NPN IS=9E-13 BF=990 NF=1 VAF=25 IKF=3.8 ISE=8E-14 NE=1.35
+ BR=410 NR=1 VAR=8 IKR=1.25 ISC=8e-14 NC=1.35 RE=0.0117 RB=0.1 RC=0.0081
+ CJE=168E-12 VJE=0.7 MJE=0.38 CJC=61E-12 VJC=0.52 MJC=0.31 TF=0.5E-9 TR=1.7e-9
+ XTB=1.4
*
*$
*
*                (c)  2008 Zetex Semiconductors plc
*
*   The copyright in these models  and  the designs embodied belong
*   to Zetex Semiconductors plc (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Zetex PLC, its distributors
*   or agents.
*
*   Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*ZETEX ZXTN25012EFH Spice Model v1.0 Last revision 01/03/07
    *
    .MODEL ZXTN25012EFH NPN IS=9E-13 BF=990 NF=1 VAF=25 IKF=3.8 ISE=8E-14 NE=1.35
    +BR=410 NR=1 VAR=8 IKR=1.25 ISC=8e-14 NC=1.35 RE=0.0117 RB=0.1 RC=0.0081
    +CJE=168E-12 VJE=0.7 MJE=0.38 CJC=61E-12 VJC=0.52 MJC=0.31 TF=0.5E-9 TR=1.7e-9
    +XTB=1.4
    *
    *$
    *


*ZETEX ZXTN07012EFF Spice Model v1.0 Last Revised 12/10/07
    *
    .MODEL ZXTN07012EFF NPN IS=1.7E-12 NF=1 BF=1100 IKF=5 VAF=25 ISE=3E-13
    + NE=1.43 NR=1 BR=470 IKR=1 VAR=6.5 ISC=1.2e-12 NC=1.5 RB=0.1 RE=0.03
    + RC=0.0097 RCO=0.2 GAMMA=10E-10 CJC=106E-12 MJC=0.33 VJC=0.55 CJE=285E-12
    + MJE=0.41 VJE=0.80 TF=0.4E-9 TR=1.3e-9 XTB=1.4 TRC1=0.003 TRB1=0.003
    + TRE1=0.003 QUASIMOD=1
    *
    *$
    *


*ZETEX FZT688B Spice Model v1.0 Last Revised 8/11/90
    *
    .MODEL FZT688B NPN IS =1.09E-12 NF =0.9935 BF =1180 IKF=5.2 VAF=25
    +ISE=1.3E-13 NE =1.35 NR =0.992 BR =790 IKR=.5 VAR=5 ISC=0.174E-12
    +NC =1.399 RB =.3 RE =.036 RC =.034 CJC=104E-12 MJC=.29 VJC=.46
    +CJE=280E-12 TF =.93E-9 TR =1.05E-9
    *
    *$
    *


*ZETEX FCX688B Spice Model v1.0 Last Revised 2/1/03
    *
    .MODEL FCX688B NPN IS =1.09E-12 NF =0.9935 BF =1180 IKF=5.2 VAF=25
    +ISE=1.3E-13 NE =1.35 NR =0.992 BR =790 IKR=.5 VAR=5 ISC=0.174E-12
    +NC =1.399 RB =.3 RE =.036 RC =.034 CJC=104E-12 MJC=.29 VJC=.46
    +CJE=280E-12 TF =.93E-9 TR =1.05E-9
    *
    *$
    *


*ZETEX ZTX688B  Spice Model v1.0 Last Revised 8/11/90
    *
    .MODEL ZTX688B NPN IS =1.09E-12 NF =0.9935 BF =1180 IKF=5.2 VAF=25
    +ISE=1.3E-13 NE =1.35 NR =0.992 BR =790 IKR=.5 VAR=5 ISC=0.174E-12
    +NC =1.399 RB =.3 RE =.036 RC =.034 CJC=104E-12 MJC=.29 VJC=.46
    +CJE=280E-12 TF =.93E-9 TR =1.05E-9
    *
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=08/01/2009
*VERSION=1
*
.MODEL 2DD2678  NPN IS=5.92E-13 BF=500 IKF=5 VAF=34.6
+ ISE=1.27E-13 NE=1.425 NR=1 BR=280 IKR=2 VAR=12.25 
+ ISC=6.138E-13 NC=1.46 RB=0.1 RE=0.025 RC=0.017 
+ CJC=76E-12 MJC=0.2981 VJC=0.4414 CJE=230E-12 
+ MJE=0.3569 VJE=0.7042 TF=1.12E-9 TR=2.15E-9
*
*$


*ZETEX ZXTN25012EFL Spice Model v1.0 Last revision 01/03/07
    *
    .MODEL ZXTN25012EFL NPN IS=9E-13 BF=990 NF=1 VAF=25 IKF=3.8 ISE=8E-14 NE=1.35
    +BR=410 NR=1 VAR=8 IKR=1.25 ISC=8e-14 NC=1.35 RE=0.0117 RB=0.1 RC=0.0081
    +CJE=168E-12 VJE=0.7 MJE=0.38 CJC=61E-12 VJC=0.52 MJC=0.31 TF=0.5E-9 TR=1.7e-9
    +XTB=1.4
    *
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=08/01/2009
*VERSION=1
*
.MODEL 2DD2661  NPN IS=5.92E-13 BF=500 IKF=5 VAF=34.6
+ ISE=1.27E-13 NE=1.425 NR=1 BR=280 IKR=2 VAR=12.25 
+ ISC=6.138E-13 NC=1.46 RB=0.1 RE=0.025 RC=0.017 
+ CJC=76E-12 MJC=0.2981 VJC=0.4414 CJE=230E-12 
+ MJE=0.3569 VJE=0.7042 TF=1.12E-9 TR=2.15E-9
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=09/01/2009
*VERSION=1
*
.MODEL 2DD2652  NPN IS=2.66E-13 BF=550 IKF=2.25 VAF=34.6
+ ISE=5.7E-14 NE=1.425 BR=280 IKR=0.9 VAR=12.25 
+ ISC=2.76E-13 NC=1.46 RB=0.22 RE=0.055 RC=0.038 
+ CJC=34.2E-12 MJC=0.298 VJC=0.441 CJE=103.5E-12 
+ MJE=0.357 VJE=0.7042 TF=1.12E-9 TR=2.15E-9
*
*$


*ZETEX ZXTN23015CFH Spice Model v1.0 Last Revised 05/10/07
    *
    .MODEL ZXTN23015CFH NPN IS=8E-13 NF=1 BF=410 IKF=9 VAF=90 ISE=3.3E-13
    + NE=1.42 NR=1 BR=180 IKR=1 VAR=12.5 ISC=1.2E-12 NC=1.52 RB=0.2 RE=0.0012
    + RC=0.005 CJC=153E-12 MJC=0.35 VJC=0.55 CJE=550E-12 MJE=0.37 VJE=0.75
    + TF=6E-10 TR=0.35E-8 XTB=1.4 TRC1=.005 TRB1=.005 TRE1=.005 QUASIMOD=1
    + RCO=0.12 GAMMA=5E-10
    *
    *$
    *


*ZETEX ZXTN25015DFH Spice Model v1.0 Last Revised 11/10/07
    *
    .MODEL ZXTN25015DFH NPN IS=5E-13 NF=1 BF=500 IKF=5.5 VAF=57 ISE=2.3E-13
    + NE=1.55 NR=1 BR=160 IKR=1 VAR=12.3 ISC=6e-13 NC=1.47 RB=0.15 RE=.009
    + RC=.006 RCO=0.2 GAMMA=1.8E-10 CJC=60E-12 MJC=0.33 VJC=0.55 CJE=200E-12
    + MJE=0.38 VJE=0.75 TF=0.6E-9 TR=2.6e-9 XTB=1.4 TRC1=.005 TRB1=.005
    + TRE1=.005 QUASIMOD=1
    *
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=27JAN2011
*VERSION=1
*
.MODEL ZXTN617MA NPN IS=5.92E-13 BF=500 IKF=5 VAF=34.6
+ ISE=1.27E-13 NE=1.425 NR=1 BR=280 IKR=2 VAR=12.25 
+ ISC=6.138E-13 NC=1.46 RB=0.1 RE=0.025 RC=0.017 
+ CJC=76E-12 MJC=0.2981 VJC=0.4414 CJE=230E-12 
+ MJE=0.3569 VJE=0.7042 TF=1.12E-9 TR=2.15E-9
*
*$


*ZETEX ZXT10N15DE6 Spice Model v1.0 Last Revised 25/11/02
    *
    .MODEL ZXT10N15DE6  NPN IS =5.92E-13 BF =500 IKF=5 VAF=34.6
    +               ISE=1.27E-13 NE =1.425 NR =1 BR =280 IKR=2 VAR=12.25 
    +               ISC=6.138E-13 NC =1.46 RB =0.1 RE =0.025 RC =0.017 
    +               CJC=76E-12 MJC=0.2981 VJC=0.4414 CJE=230E-12 
    +               MJE=0.3569 VJE=0.7042 TF =1.12E-9 TR =2.15E-9
    *
    *$
    *


*ZETEX FCX617 Spice Model v1.0 Last Revised 25/11/02
    *
    .MODEL FCX617  NPN IS =5.92E-13 BF =500 IKF=5 VAF=34.6
    +               ISE=1.27E-13 NE =1.425 NR =1 BR =280 IKR=2 VAR=12.25 
    +               ISC=6.138E-13 NC =1.46 RB =0.1 RE =0.025 RC =0.017 
    +               CJC=76E-12 MJC=0.2981 VJC=0.4414 CJE=230E-12 
    +               MJE=0.3569 VJE=0.7042 TF =1.12E-9 TR =2.15E-9
    *
    *$
    *


*ZETEX FMMT617 Spice Model v1.0 Last Revised 19/4/94
    *
    .MODEL FMMT617  NPN IS =5.92E-13 BF =500 IKF=5 VAF=34.6
    +               ISE=1.27E-13 NE =1.425 NR =1 BR =280 IKR=2 VAR=12.25 
    +               ISC=6.138E-13 NC =1.46 RB =0.1 RE =0.025 RC =0.017 
    +               CJC=76E-12 MJC=0.2981 VJC=0.4414 CJE=230E-12 
    +               MJE=0.3569 VJE=0.7042 TF =1.12E-9 TR =2.15E-9
    *
    *$
    *


*ZETEX ZTX689B Spice Model v1.0 Last Revised 12/10/04
    *
    .MODEL ZTX689B NPN IS =1.8E-12 NF =0.994 BF =1500 IKF=3.2 VAF=24
    +ISE=.218E-12 NE =1.345 NR =0.996 BR =310 IKR=.8 VAR=4 ISC=0.36E-12
    +NC =1.26 RB =.2 RE =.035 RC =.036 CJC=74E-12 MJC=.35 VJC=.485
    +CJE=248E-12 TF =0.72E-9 TR =4.9E-9 XTB=1.13 TRE1=4E-3 ITF=5e-3 
    *
    *$
    *


*ZETEX FMMT618 Spice Model v1.0 Last Revised 8/7/93
    *
    .MODEL FMMT618  NPN IS =5.611E-13 NF =1.0022 BF =480 IKF=4.6 VAF=51
    +               ISE=1.73E-13 NE =1.4 NR =1.0002 BR =200 IKR=3 VAR=25 
    +               ISC=7.3152E-13 NC =1.47 RB =0.032 RE =0.027 RC =0.025 
    +               CJC=59E-12 MJC=0.2651 VJC=0.3051 CJE=216E-12 
    +               TF =0.95E-9 TR =2.25E-9
    *
    *$
    *


*ZETEX ZXTN25020DFL Spice Model v1.0 Last Revised 02/3/2007
    *
    .MODEL ZXTN25020DFL NPN IS=4E-13 BF=550 NF=1 VAF=25 IKF=4.5 ISE=1E-13 NE=1.4
    +BR=120 NR=1 VAR=8 IKR=1.7 ISC=4e-13 NC=1.4 RE=0.010 RB=0.1 RC=0.0085
    +CJE=190E-12 VJE=0.67 MJE=0.345 CJC=47E-12 VJC=0.525 MJC=0.34 TF=0.53E-9 TR=8.6e-9 
    +RCO=0.29 GAMMA=0.8E-9 QUASIMOD=1 XTB=1.4
    *
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=16/9/2009
*VERSION=1
*
.MODEL DSS4220V NPN IS=7.5E-13 BF=700 NF=1.005 VAF=61 IKF=3.3
+ ISE=8.5E-14 NE=1.35 BR=130 NR=1 VAR=11.3 IKR=1.4 ISC=6E-13 NC=1.38
+ RE=0.061 RB=0.5 RC=0.010 CJE=143E-12 VJE=0.80 MJE=0.39 CJC=39E-12
+ VJC=0.40 MJC=0.26 TF=0.48E-9 TR=2.7E-9 RCO=0.42 GAMMA=2E-9
+ QUASIMOD=1 XTB=1.35 TRE1=0.004 TRB1=0.004 TRC1=0.004
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=19/01/2011
*VERSION=1
*
.MODEL ZXTN26020DMF NPN IS=7.5E-13 BF=700 NF=1.005 VAF=61 IKF=3.3
+ ISE=8.5E-14 NE=1.35 BR=130 NR=1 VAR=11.3 IKR=1.4 ISC=6E-13 NC=1.38
+ RE=0.061 RB=0.5 RC=0.010 CJE=143E-12 VJE=0.80 MJE=0.39 CJC=39E-12
+ VJC=0.40 MJC=0.26 TF=0.48E-9 TR=2.7E-9 RCO=0.42 GAMMA=2E-9
+ QUASIMOD=1 XTB=1.35 TRE1=0.004 TRB1=0.004 TRC1=0.004
*
*$


*ZETEX FMMTL618 Spice Model v1.0 Last Revised 25/06/98 
    *
    .MODEL FMMTL618  NPN IS =2.5E-13 NF =1 BF =600 IKF=1 VAF=51 ISE=2E-13 
    +NE =1.4 NR =1 BR =150 IKR=.5 VAR=25 ISC=1e-13 NC =1.47 RB =0.5
    +RE =0.055 RC =0.055 CJC=23E-12 MJC=0.33 VJC=0.75 CJE=98E-12 TF =0.8E-9 
    +TR =30e-9 
    *
    *$
    *


*ZETEX ZUMT618 Spice Model v1.0 Last Revised 24/1/03
    *
    .MODEL ZUMT618  NPN IS =2.52E-13 BF =550 IKF=2.1 VAF=51 
    +ISE=7.8E-14 NE =1.4 BR =200 IKR=1.35 VAR=25 ISC=3.29E-13 
    +NC =1.47 RB =0.071 RE =0.06 RC =0.055 CJC=26.6E-12 MJC=0.265 
    +VJC=0.305 CJE=97.2E-12 TF =0.95E-9 TR =2.25E-9
    *
    *$
    *


*ZETEX ZXTN2005G Spice Model v1.0 Last revision 24/03/06
    *
    .MODEL ZXTN2005G NPN IS =1.9E-12 BF =730 XTB=1.4 IKF=5.5 VAF=30
    +ISE=8E-13 NE =1.4 NR =1 BR =280 IKR=2.5 VAR=15 ISC=1.2E-12
    +NC =1.4 RB =1 RBM =0.012 IRB =1 RE = 0.022 RC =0.004 CJC=125E-12
    +MJC=0.3917 VJC=0.5871 CJE=528E-12 MJE=0.3826 VJE=0.7686
    +TF =0.8E-9 TR =3.2E-9 
    *
    *$
    *


*ZETEX ZXTN2005Z Spice Model v1.0 Last revision 24/03/06
    *
    .MODEL ZXTN2005Z NPN IS =1.9E-12 BF =730 XTB=1.4 IKF=5.5 VAF=30
    +ISE=8E-13 NE =1.4 NR =1 BR =280 IKR=2.5 VAR=15 ISC=1.2E-12
    +NC =1.4 RB =1 RBM =0.012 IRB =1 RE = 0.022 RC =0.004 CJC=125E-12
    +MJC=0.3917 VJC=0.5871 CJE=528E-12 MJE=0.3826 VJE=0.7686
    +TF =0.8E-9 TR =3.2E-9 
    *
    *$
    *


*ZETEX ZTX869 Spice Model v1.0 Last Revised 25/04/01
    *
    .MODEL ZTX869 NPN IS =1.9E-12  BF =600 IKF=9 VAF=40
    +ISE=3.752E-13 NE =1.399 NR =1 BR =370 IKR=6 
    +VAR=18 ISC=4.135E-13 NC =1.384 RB =1 RBM =0.01  
    +IRB =1 RE = 0.01 RC =0.02 CJC=215E-12 MJC=0.3917  
    +VJC=0.5871 CJE=910.3E-12 MJE=0.3826 VJE=0.7686
    +TF =1.15E-9 TR =4.01E-9
    *
    *$
    *


*ZETEX ZTX1049A Spice Model v1.0 Last Revised 15/6/95
    *
    .MODEL     ZTX1049A  NPN IS=1.5E-12  NF=1.0  BF=600  IKF=7.5  VAF=100 
    +               ISE=0.9E-13  NE=1.25  NR=1.0  BR=150  IKR=3  VAR=15
    +               ISC=5.0E-13  NC=1.76  RB=0.1  RE=0.018  RC=0.007 
    +               CJC=136E-12  CJE=550E-12  MJC=0.352  MJE=0.36
    +               VJC=0.554   VJE=0.726  TF=400E-12  TR=6.9E-9
    *
    *$
    *


*ZETEX FZT649 Spice Model v1.0 Last Revised 17/7/90
    *
    .MODEL FZT649 NPN IS =3E-13 BF =225 VAF=80 IKF=2.8 ISE=1.1E-13 NE =1.37
    +BR =110 VAR=28 NR =.972 IKR=0.8 ISC=6.5E-13 NC =1.372 RB =0.3 RE =.063
    +RC =.07 CJE=325E-12 TF =1E-9 CJC=70E-12 TR =10E-9
    *
    *$
    *


*DIODES_INC_SPICE_MODEL ZXTN649F
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=22Aug2013
*VERSION=1.0


.MODEL ZXTN649F NPN (IS=1.45E-13 NF=.99 ISE=75E-15 NE=1.38 BF=220 ISC=400E-15 NC=1.4 BR=30 NR=.99 CJE=178p VJE=.7 MJE=.345 CJC=37.45p MJC=.35 VJC=.5 RE=.03 RB=1 RC=.03 VAF=75 IKF=8.5 TF=1n TR=250u Nk=.69  TR =23.7E-9 XTB=1.3 TRE1=.0025 TRB1=.0025 TRC1=.0025) 


*                (c)  2013 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*ZETEX ZTX649 Spice Model v1.0 Last Revised 17/7/90
    *
    .MODEL ZTX649 NPN IS =3E-13 BF =225 VAF=80 IKF=2.8 ISE=1.1E-13 NE =1.37
    +BR =110 VAR=28 NR =.972 IKR=0.8 ISC=6.5E-13 NC =1.372 RB =0.3 RE =.063
    +RC =.07 CJE=325E-12 TF =1E-9 CJC=70E-12 TR =10E-9
    *
    *$
    *


*ZETEX ZUMT617 Spice Model v1.0 Last Revised 24/1/03
    *
    .MODEL ZUMT617  NPN IS =2.66E-13 BF =550 IKF=2.25 VAF=34.6
    +ISE=5.7E-14 NE =1.425 BR =280 IKR=0.9 VAR=12.25 
    +ISC=2.76E-13 NC =1.46 RB =0.22 RE =0.055 RC =0.038 
    +CJC=34.2E-12 MJC=0.298 VJC=0.441 CJE=103.5E-12 
    +MJE=0.357 VJE=0.7042 TF =1.12E-9 TR =2.15E-9
    *
    *$
    *


*ZETEX FZT1048A Spice Model v1.0 Last Revised 14/3/97
    *
    .MODEL FZT1048A NPN IS=13.73E-13  NF=1.0  BF=550  IKF=8.0  VAF=120 
    +               ISE=2.6E-13  NE=1.38  NR=1.0  BR=300  IKR=6  VAR=15
    +               ISC=1.6E-12  NC=1.4  RB=0.1  RE=0.022  RC=0.010 
    +               CJC=136E-12  CJE=559.1E-12  MJC=0.267  MJE=0.299 
    +               VJC=0.420  VJE=0.533  TF=600E-12  TR=3E-9  
    *
    *$
    *


*ZETEX ZTX1048A Spice Model v1.0 Last Revised 20/01/95
    *
    .MODEL ZTX1048A NPN IS=13.73E-13  NF=1.0  BF=550  IKF=8.0  VAF=120 
    +               ISE=2.6E-13  NE=1.38  NR=1.0  BR=300  IKR=6  VAR=15
    +               ISC=1.6E-12  NC=1.4  RB=0.1  RE=0.022  RC=0.010 
    +               CJC=136E-12  CJE=559.1E-12  MJC=0.267  MJE=0.299 
    +               VJC=0.420  VJE=0.533  TF=600E-12  TR=3E-9  
    *
    *$
    *


*DIODES_INC_SPICE_MODEL ZXTN19020DG
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG
*DATE=4/01/2013
*VERSION=1

.MODEL ZXTN19020DG NPN IS=9E-13 NF=1 BF=530 IKF=6 VAF=105 ISE=8E-14
+ NE=1.4 NR=1  BR=174 IKR=1 VAR=12.8 ISC=4E-13 NC=1.37 RB=0.17 RE=0.0055
+ RC=0.0035 CJC=89E-12 MJC=0.34 VJC=0.51 CJE=365E-12 MJE=0.39 VJE=0.8
+ TF=9E-10 TR=0.55E-8 XTB=1.4 TRC1=.005 TRB1=.005 TRE1=.005 QUASIMOD=1
+ RCO=0.15 GAMMA=0.3E-9



*                (c)  2013 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*DIODES_INC_SPICE_MODEL ZXTN19020DZ
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG
*DATE=4/01/2013
*VERSION=1

.MODEL ZXTN19020DZ NPN IS=9E-13 NF=1 BF=530 IKF=6 VAF=105 ISE=8E-14
+ NE=1.4 NR=1  BR=174 IKR=1 VAR=12.8 ISC=4E-13 NC=1.37 RB=0.17 RE=0.0055
+ RC=0.0035 CJC=89E-12 MJC=0.34 VJC=0.51 CJE=365E-12 MJE=0.39 VJE=0.8
+ TF=9E-10 TR=0.55E-8 XTB=1.4 TRC1=.005 TRB1=.005 TRE1=.005 QUASIMOD=1
+ RCO=0.15 GAMMA=0.3E-9



*                (c)  2013 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*ZETEX ZXTN19020CFF Spice Model v1.0 Last Revised 29/08/07
    *
    .MODEL ZXTN19020CFF NPN IS=5.9E-13 NF=1 BF=400 IKF=9 VAF=117 ISE=9E-14
    +NE=1.42 NR=1 BR=163 IKR=1 VAR=15.2 ISC=4E-13 NC=1.38 RB=.17 RE=.005
    +RC=.0025 CJC=98E-12 MJC=0.29 VJC=0.46 CJE=379E-12 MJE=0.38 VJE=0.8
    +TF=9E-10 TR=0.55E-8 XTB=1.4 TRC1=.01 TRB1=.01 TRE1=.01 QUASIMOD=1
    +RCO=0.15 GAMMA=1E-9
    *
    *$
    *


*ZETEX ZXTN19020DFF Spice Model v1.0 Last Revised 29/08/07
    *
    .MODEL ZXTN19020DFF NPN IS=9E-13 NF=1 BF=530 IKF=6 VAF=105 ISE=8E-14
    +NE=1.4 NR=1  BR=174 IKR=1 VAR=12.8 ISC=4E-13 NC=1.37 RB=0.17 RE=0.0055
    +RC=0.0035 CJC=89E-12 MJC=0.34 VJC=0.51 CJE=365E-12 MJE=0.39 VJE=0.8
    +TF=9E-10 TR=0.55E-8 XTB=1.4 TRC1=.005 TRB1=.005 TRE1=.005 QUASIMOD=1
    +RCO=0.15 GAMMA=0.3E-9
    *
    *$
    *


*ZETEX ZXT13N20DE6 Spice Model v2.0 Last revision 3/10/05
    *
    .MODEL ZXT13N20DE6 NPN IS=1.71E-12 NF=1 BF=600 IKF=15 VAF=51 RC=0.03 
    +ISE=1.5E-13 NE=1.3 NR=1 BR=125 VAR=12 ISC=3.5E-13 NC=1.3 RB =1.6
    +RE =0.006 CJC=162E-12 MJC=0.278 VJC=0.391 CJE=614E-12 MJE=0.308
    +VJE=0.46 TF=1.1E-9 TR=6.3E-9 XTB=1.4 QUASIMOD=1 RCO=0.5 GAMMA=1E-8 
    *
    *$
    *


*ZETEX ZXTN25020BFH Spice Model v1.0 Last Revised 13/3/2007
    *
    .MODEL ZXTN25020BFH NPN IS=2E-13 BF=280 NF=1 VAF=40 IKF=4.3 ISE=1E-13 NE=1.4
    +BR=90 NR=1 VAR=19 IKR=2.0 ISC=5e-13 NC=1.45 RE=0.0131 RB=0.14 RC=0.0086
    +CJE=224E-12 VJE=0.67 MJE=0.33 CJC=62.5E-12 VJC=0.55 MJC=0.335 TF=0.65E-9 TR=7.5e-9
    +RCO=0.13 GAMMA=1E-10 QUASIMOD=1 XTB=1.4
    *
    *$
    *


*ZETEX ZXTN25020CFH Spice Model v1.0 Last revision 04/07/07
    *
    .MODEL ZXTN25020CFH NPN IS =2.8E-13 NF =1 BF =390 IKF=9 NK=0.73 VAF=67
    +ISE=7E-14 NE =1.4 NR =1 BR =36 IKR=1.7 VAR=14 ISC=4e-13 NC =1.4 RB =0.15
    +RE =.008 RC =.006 RCO=0.29 GAMMA=1.1E-9 CJC=47E-12 MJC=0.33 VJC=0.49
    +CJE=196E-12 MJE=0.34 VJE=0.68 TF =0.7E-9 TR =20e-9 XTB=1.4 TRE1=.005
    +TRB1=.005 TRC1=.005 QUASIMOD=1
    *
    *$
    *


*ZETEX ZXTN25020DFH Spice Model v1.0 Last Revised 02/3/2007
    *
    .MODEL ZXTN25020DFH NPN IS=4E-13 BF=550 NF=1 VAF=25 IKF=4.5 ISE=1E-13 NE=1.4
    +BR=120 NR=1 VAR=8 IKR=1.7 ISC=4e-13 NC=1.4 RE=0.010 RB=0.1 RC=0.0085
    +CJE=190E-12 VJE=0.67 MJE=0.345 CJC=47E-12 VJC=0.525 MJC=0.34 TF=0.53E-9 TR=8.6e-9 
    +RCO=0.29 GAMMA=0.8E-9 QUASIMOD=1 XTB=1.4
    *
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=27JAN2011
*VERSION=1
*
.MODEL ZXTN618MA NPN IS=5.611E-13 NF=1.0022 BF=480 IKF=4.6 VAF=51
+ ISE=1.73E-13 NE=1.4 NR=1.0002 BR=200 IKR=3 VAR=25 
+ ISC=7.3152E-13 NC=1.47 RB=0.032 RE=0.027 RC=0.025 
+ CJC=59E-12 MJC=0.2651 VJC=0.3051 CJE=216E-12 
+ TF=0.95E-9 TR=2.25E-9
*
*$


*ZETEX ZXT10N20DE6 Spice Model v1.0 Last Revised 25/11/02
    *
    .MODEL ZXT10N20DE6  NPN IS =5.611E-13 NF =1.0022 BF =480 IKF=4.6 VAF=51
    +               ISE=1.73E-13 NE =1.4 NR =1.0002 BR =200 IKR=3 VAR=25 
    +               ISC=7.3152E-13 NC =1.47 RB =0.032 RE =0.027 RC =0.025 
    +               CJC=59E-12 MJC=0.2651 VJC=0.3051 CJE=216E-12 
    +               TF =0.95E-9 TR =2.25E-9
    *
    *$
    *


*ZETEX ZTX618 Spice Model v1.0 Last Revised 8/7/93
    *
    .MODEL ZTX618  NPN IS =5.611E-13 NF =1.0022 BF =480 IKF=4.6 VAF=51
    +               ISE=1.73E-13 NE =1.4 NR =1.0002 BR =200 IKR=3 VAR=25 
    +               ISC=7.3152E-13 NC =1.47 RB =0.032 RE =0.027 RC =0.025 
    +               CJC=59E-12 MJC=0.2651 VJC=0.3051 CJE=216E-12 
    +               TF =0.95E-9 TR =2.25E-9
    *
    *$
    *


*ZETEX BCX6825 Spice Model v1.0 Last Revised 11/11/04
    *
    .MODEL BCX6825 NPN IS =1.04E-13  BF =195 IKF =1.9 VAF =160 
    +              ISE=1.83E-14 NE =1.35 NR =1.00 BR =140 IKR=0.5 
    +              VAR=30 ISC=6.00E-12 NC =1.5 RB =0.3 RE =0.065
    +              RC =0.11 CJC=25.37E-12 MJC=0.3281 VJC=0.464 
    +              CJE=122E-12 MJE=0.3412 VJE=0.7631 TF =0.86E-9 
    +              TR =12.5E-9
    *
    *$
    *


*ZETEX FZT689B Spice Model v1.1 Last Revised 12/10/04
    *
    .MODEL FZT689B NPN IS =1.8E-12 NF =0.994 BF =1500 IKF=3.2 VAF=24
    +ISE=.218E-12 NE =1.345 NR =0.996 BR =310 IKR=.8 VAR=4 ISC=0.36E-12
    +NC =1.26 RB =.2 RE =.035 RC =.036 CJC=74E-12 MJC=.35 VJC=.485
    +CJE=248E-12 TF =0.72E-9 TR =4.9E-9 XTB=1.13 TRE1=4E-3 ITF=5e-3 
    *
    *$
    *


*ZETEX FZT869 Spice Model v1.0 Last Revised 14/3/97
    *
    .MODEL FZT869 NPN IS =1.9E-12  BF =600 IKF=9 VAF=40
    +             ISE=3.752E-13 NE =1.399 NR =1 BR =370 IKR=6 
    +             VAR=18 ISC=4.135E-13 NC =1.384 RB =1 RBM =0.01  
    +             IRB =1 RE = 0.01 RC =0.02 CJC=215E-12 MJC=0.3917  
    +             VJC=0.5871 CJE=910.3E-12 MJE=0.3826 VJE=0.7686
    +             TF =1.15E-9 TR =4.01E-9
    *
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=10FEB2011
*VERSION=1
*PIN_ORDER         
* 1=E2    8=C2
* 2=B2    7=C2
* 3=E1    6=C1
* 4=B1    5=C1
*
.SUBCKT ZDT6718 1 2 3 4 5 6 7 8
Q1 11 4 3 Nmod
Q2 12 2 1 Pmod
RP1 11 5 0.001
RP2 11 6 0.001
RP3 12 7 0.001
RP4 12 8 0.001
*
.MODEL Nmod NPN IS=5.611E-13 NF=1.0022 BF=480 IKF=4.6 VAF=51
+ ISE=1.73E-13 NE=1.4 NR=1.0002 BR=200 IKR=3 VAR=25 
+ ISC=7.3152E-13 NC=1.47 RB=0.032 RE=0.027 RC=0.025 
+ CJC=59E-12 MJC=0.2651 VJC=0.3051 CJE=216E-12 
+ TF=0.95E-9 TR=2.25E-9
.MODEL Pmod PNP IS=6.8E-13  BF=480 IKF=2 VAF=23 
+ ISE=0.8E-13 NE=1.5567 NR=1.00 BR=70 IKR=0.4 
+ VAR=7 ISC=7.5E-14 NC=1.19 RB=0.085 RE=0.04
+ RC=0.045 CJC=70.02E-12 MJC=0.4685 VJC=0.7714 
+ CJE=203.6E-12 MJE=0.5029 VJE=0.9403 TF=0.71E-9 
+ TR=23.7E-9
.ENDS
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=10FEB2011
*VERSION=1
*PIN_ORDER         
* 1=C1    6=E1
* 2=B1    5=B2
* 3=C2    4=E2
*
.SUBCKT ZXTC2061E6 1 2 3 4 5 6
Q1 1 2 6 Nmod
Q2 3 5 4 Pmod
*
.MODEL Nmod NPN IS=9E-13 BF=990 NF=1 VAF=25 IKF=3.8 ISE=8E-14 NE=1.35
+ BR=410 NR=1 VAR=8 IKR=1.25 ISC=8e-14 NC=1.35 RE=0.0117 RB=0.1 RC=0.0081
+ CJE=168E-12 VJE=0.7 MJE=0.38 CJC=61E-12 VJC=0.52 MJC=0.31 TF=0.5E-9 TR=1.7e-9
+ XTB=1.4
.MODEL Pmod PNP IS=5.5E-13 NF=1 BF=650 VAF=20 ISE=1.9E-13
+ IKF=2.5 NE=1.53 BR=72 VAR=4.1 ISC=7E-14 NC=1.2 IKR=0.25 RC=0.010
+ RB=0.15 RE=0.006 QUASIMOD=1 RCO=0.7 GAMMA=1.7E-9 CJC=57E-12 MJC=0.35
+ VJC=0.53 CJE=168E-12 MJE=0.54 VJE=0.95 TF=0.42E-9 TR=8.4E-9 TRC1=0.005
+ TRB1=0.005 TRE1=0.005 XTB=1.4 
.ENDS
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=10FEB2011
*VERSION=1
*PIN_ORDER         
* 1=C1    6=E1
* 2=B1    5=B2
* 3=C2    4=E2
*
.SUBCKT ZXTC2062E6 1 2 3 4 5 6
Q1 1 2 6 Nmod
Q2 3 5 4 Pmod
*
.MODEL Nmod NPN IS=4E-13 BF=550 NF=1 VAF=25 IKF=4.5 ISE=1E-13 NE=1.4
+ BR=120 NR=1 VAR=8 IKR=1.7 ISC=4e-13 NC=1.4 RE=0.010 RB=0.1 RC=0.0085
+ CJE=190E-12 VJE=0.67 MJE=0.345 CJC=47E-12 VJC=0.525 MJC=0.34 TF=0.53E-9 TR=8.6e-9 
+ RCO=0.29 GAMMA=0.8E-9 QUASIMOD=1 XTB=1.4
.MODEL Pmod PNP IS=4E-13 NF=1 BF=510 IKF=3.5 VAF=23 ISE=10E-14 NE=1.49
+ NR=1 BR=97 IKR=1 VAR=4.5 ISC=7.5e-14 NC=1.2 RE=0.0136 RB=0.12 RC=0.0094 RCO=0.9
+ GAMMA=2.5E-9 CJC=60E-12 MJC=0.33 VJC=0.51 CJE=183E-12 MJE=0.5 VJE=0.9 TF=3.4E-10
+ TR=4.5e-9 XTB=1.5 TRE1=.002 TRB1=.002 TRC1=.002 QUASIMOD=1 
.ENDS
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=24JAN2011
*VERSION=2
*PIN_ORDER         
*1=B1
*2=E1
*3=B2
*4=E2
*5=C2
*6=C2
*7=C1
*8=C1
*
.SUBCKT ZXTC6717MC 1 2 3 4 5 6 7 8
Q1 10 1 2 Nmod
Q2 20 3 4 Pmod
RP1 10 7 0.001
RP2 10 8 0.001
RP3 20 5 0.001
RP4 20 6 0.001
*
.MODEL Nmod NPN IS=5.92E-13 BF=500 IKF=5 VAF=34.6
+ ISE=1.27E-13 NE=1.425 NR=1 BR=280 IKR=2 VAR=12.25 
+ ISC=6.138E-13 NC=1.46 RB=0.1 RE=0.025 RC=0.017 
+ CJC=76E-12 MJC=0.2981 VJC=0.4414 CJE=230E-12 
+ MJE=0.3569 VJE=0.7042 TF=1.12E-9 TR=2.15E-9
.MODEL Pmod PNP IS=5.5E-13  BF=500 IKF=3 VAF=14.93 
+ ISE=1.75E-13 NE=1.5 NR=1.00 BR=280 IKR=0.3 
+ VAR=5.64 ISC=6.01E-13 NC=1.34 RB=0.3 RE=0.03
+ RC=0.025 CJC=116.9E-12 MJC=0.3456 VJC=0.4576 
+ CJE=223.6E-12 MJE=0.4803 VJE=0.9091 TF=1.2E-9 
+ TR=2E-9
.ENDS
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=24JAN2011
*VERSION=1
*PIN_ORDER         
*1=B1
*2=E1
*3=B2
*4=E2
*5=C2
*6=C2
*7=C1
*8=C1
*
.SUBCKT ZXTC6718MC 1 2 3 4 5 6 7 8
Q1 10 1 2 Nmod
Q2 20 3 4 Pmod
RP1 10 7 0.001
RP2 10 8 0.001
RP3 20 5 0.001
RP4 20 6 0.001
*
.MODEL Nmod NPN IS=5.611E-13 NF=1.0022 BF=480 IKF=4.6 VAF=51
+ ISE=1.73E-13 NE=1.4 NR=1.0002 BR=200 IKR=3 VAR=25 
+ ISC=7.3152E-13 NC=1.47 RB=0.032 RE=0.027 RC=0.025 
+ CJC=59E-12 MJC=0.2651 VJC=0.3051 CJE=216E-12 
+ TF=0.95E-9 TR=2.25E-9
.MODEL Pmod PNP IS=6.8E-13  BF=480 IKF=2 VAF=23 
+ ISE=0.8E-13 NE=1.5567 NR=1.00 BR=70 IKR=0.4 
+ VAR=7 ISC=7.5E-14 NC=1.19 RB=0.085 RE=0.04
+ RC=0.045 CJC=70.02E-12 MJC=0.4685 VJC=0.7714 
+ CJE=203.6E-12 MJE=0.5029 VJE=0.9403 TF=0.71E-9 
+ TR=23.7E-9
.ENDS
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=27/04/2010
*VERSION=1
*PIN_ORDER         C1, B1, C2, E2, B2, E1.
*
.SUBCKT ZXTD6717E6 1 2 3 4 5 6
*
Q1 1 2 6 Nmod1
Q2 3 5 4 Pmod1
*
.MODEL Nmod1 NPN IS=5.92E-13 BF=500 IKF=5 VAF=34.6
+ ISE=1.27E-13 NE=1.425 NR=1 BR=280 IKR=2 VAR=12.25 
+ ISC=6.138E-13 NC=1.46 RB=0.1 RE=0.025 RC=0.017 
+ CJC=76E-12 MJC=0.2981 VJC=0.4414 CJE=230E-12 
+ MJE=0.3569 VJE=0.7042 TF=1.12E-9 TR=2.15E-9
*
.MODEL Pmod1 PNP IS=5.5E-13  BF=500 IKF=3 VAF=14.93 
+ ISE=1.75E-13 NE=1.5 NR=1.00 BR=280 IKR=0.3 
+ VAR=5.64 ISC=6.01E-13 NC=1.34 RB=0.3 RE=0.03
+ RC=0.025 CJC=116.9E-12 MJC=0.3456 VJC=0.4576 
+ CJE=223.6E-12 MJE=0.4803 VJE=0.9091 TF=1.2E-9 
+ TR=2E-9
*
.ENDS
*
*$


*
*Zetex ZDT749 Spice Model v1.0 Last Revised  12/09/08
*
.SUBCKT ZDT749 1 2 3 4 5 6 7 8
*            E2 B2 E1 B1 C1 C1 C2 C2
Q1 9 4 3 Mod1
Q2 10 2 1 Mod1
R1 5 9 0.001
R2 6 9 0.001
R3 7 10 0.001
R4 8 10 0.001
*
.MODEL Mod1 PNP IS=2.6E-13 BF=210 VAF=27 IKF=7 ISE=1.2E-13 NE=1.43 BR=70
+ VAR=14 IKR=.6 ISC=12.04E-13 NC=1.4474 NF=.999 NR=.982 RB=.3 RE=.065
+ RC=.04 CJE=410E-12 TF=.65E-9 CJC=140E-12 TR=12E-9 MJC=.35 VJC=.305
*
.ENDS ZDT749
*
*$
*
*                (c)  2008 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=24JAN2011
*VERSION=1
*PIN_ORDER         
*1=B1
*2=E1
*3=B2
*4=E2
*5=C2
*6=C2
*7=C1
*8=C1
*
.SUBCKT ZXTD717MC 1 2 3 4 5 6 7 8
Q1 10 1 2 Pmod
Q2 20 3 4 Pmod
RP1 10 7 0.001
RP2 10 8 0.001
RP3 20 5 0.001
RP4 20 6 0.001
*
.MODEL Pmod PNP IS=5.5E-13  BF=500 IKF=3 VAF=14.93 
+ ISE=1.75E-13 NE=1.5 NR=1.00 BR=280 IKR=0.3 
+ VAR=5.64 ISC=6.01E-13 NC=1.34 RB=0.3 RE=0.03
+ RC=0.025 CJC=116.9E-12 MJC=0.3456 VJC=0.4576 
+ CJE=223.6E-12 MJE=0.4803 VJE=0.9091 TF=1.2E-9 
+ TR=2E-9
.ENDS
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=24JAN2011
*VERSION=1
*PIN_ORDER         
*1=B1
*2=E1
*3=B2
*4=E2
*5=C2
*6=C2
*7=C1
*8=C1
*
.SUBCKT ZXTD718MC 1 2 3 4 5 6 7 8
Q1 10 1 2 Pmod
Q2 20 3 4 Pmod
RP1 10 7 0.001
RP2 10 8 0.001
RP3 20 5 0.001
RP4 20 6 0.001
*
.MODEL Pmod PNP IS=6.8E-13  BF=480 IKF=2 VAF=23 
+ ISE=0.8E-13 NE=1.5567 NR=1.00 BR=70 IKR=0.4 
+ VAR=7 ISC=7.5E-14 NC=1.19 RB=0.085 RE=0.04
+ RC=0.045 CJC=70.02E-12 MJC=0.4685 VJC=0.7714 
+ CJE=203.6E-12 MJE=0.5029 VJE=0.9403 TF=0.71E-9 
+ TR=23.7E-9
.ENDS
*
*$


*
*Zetex ZDT1048 Spice Model v1.0 Last Revised  12/09/08
*
.SUBCKT ZDT1048 1 2 3 4 5 6 7 8
*            E2 B2 E1 B1 C1 C1 C2 C2
Q1 9 4 3 Mod1
Q2 10 2 1 Mod1
R1 5 9 0.001
R2 6 9 0.001
R3 7 10 0.001
R4 8 10 0.001
*
.MODEL Mod1 NPN IS=13.73E-13 NF=1.0 BF=550 IKF=8.0 VAF=120 
+ ISE=2.6E-13 NE=1.38 NR=1.0 BR=300 IKR=6 VAR=15
+ ISC=1.6E-12 NC=1.4 RB=0.1 RE=0.022 RC=0.010
+ CJC=136E-12 CJE=559.1E-12 MJC=0.267 MJE=0.299 
+ VJC=0.420 VJE=0.533 TF=600E-12 TR=3E-9
*
.ENDS ZDT1048
*
*$
*
*                (c)  2008 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA


*
*Zetex ZDT1049 Spice Model v1.0 Last Revised  12/09/08
*
.SUBCKT ZDT1049 1 2 3 4 5 6 7 8
*            E2 B2 E1 B1 C1 C1 C2 C2
Q1 9 4 3 Mod1
Q2 10 2 1 Mod1
R1 5 9 0.001
R2 6 9 0.001
R3 7 10 0.001
R4 8 10 0.001
*
.MODEL Mod1 NPN IS=1.5E-12 NF=1.0 BF=600 IKF=7.5 VAF=100 
+ ISE=0.9E-13 NE=1.25 NR=1.0 BR=150 IKR=3 VAR=15
+ ISC=5.0E-13 NC=1.76 RB=0.1 RE=0.018 RC=0.007 
+ CJC=136E-12 CJE=550E-12 MJC=0.352 MJE=0.36
+ VJC=0.554 VJE=0.726 TF=400E-12 TR=6.9E-9
*
.ENDS ZDT1049
*
*$
*
*                (c)  2008 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=24JAN2011
*VERSION=1
*PIN_ORDER         
*1=B1
*2=E1
*3=B2
*4=E2
*5=C2
*6=C2
*7=C1
*8=C1
*
.SUBCKT ZXTD617MC 1 2 3 4 5 6 7 8
Q1 10 1 2 Nmod
Q2 20 3 4 Nmod
RP1 10 7 0.001
RP2 10 8 0.001
RP3 20 5 0.001
RP4 20 6 0.001
*
.MODEL Nmod NPN IS=5.92E-13 BF=500 IKF=5 VAF=34.6
+ ISE=1.27E-13 NE=1.425 NR=1 BR=280 IKR=2 VAR=12.25 
+ ISC=6.138E-13 NC=1.46 RB=0.1 RE=0.025 RC=0.017 
+ CJC=76E-12 MJC=0.2981 VJC=0.4414 CJE=230E-12 
+ MJE=0.3569 VJE=0.7042 TF=1.12E-9 TR=2.15E-9
.ENDS
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=24JAN2011
*VERSION=1
*PIN_ORDER         
*1=B1
*2=E1
*3=B2
*4=E2
*5=C2
*6=C2
*7=C1
*8=C1
*
.SUBCKT ZXTD618MC 1 2 3 4 5 6 7 8
Q1 10 1 2 Nmod
Q2 20 3 4 Nmod
RP1 10 7 0.001
RP2 10 8 0.001
RP3 20 5 0.001
RP4 20 6 0.001
*
.MODEL Nmod NPN IS=5.611E-13 NF=1.0022 BF=480 IKF=4.6 VAF=51
+ ISE=1.73E-13 NE=1.4 NR=1.0002 BR=200 IKR=3 VAR=25 
+ ISC=7.3152E-13 NC=1.47 RB=0.032 RE=0.027 RC=0.025 
+ CJC=59E-12 MJC=0.2651 VJC=0.3051 CJE=216E-12 
+ TF=0.95E-9 TR=2.25E-9
.ENDS
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_IM
*SIMULATOR=PSPICE
*DATE=17Jun2013
*VERSION=1
*

.MODEL 2DB1713 PNP IS=1.252E-12 NF=1.0119 BF=770 IKF=2.6 VAF=11
+ISE=1.3185E-13 NE=1.4832 NR=1.0047 BR=350 IKR=0.32 VAR=10.5
+ISC=5.2648E-14 NC=1.186 RB=0.053 RE=0.031 RC=0.044 CJC=137E-12
+MJC=0.34 VJC=0.275 CJE=280E-12 TF=0.75E-9 TR=2.3E-9


*                (c)  2013 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*DIODES_INC_SPICE_MODEL_DSS20200L
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=30/10/2012
*VERSION=1

.MODEL DSS20200L PNP IS=2.5E-13 BF=400 NF=1 VAF=18.7 IKF=3.8
+ ISE=1.9E-13 NE=1.5 BR=110 NR=1 VAR=5 IKR=2 ISC=1.3e-13 NC=1.45 RE=0.01
+ RB=0.2 RC=0.02 CJE=199E-12 VJE=0.9 MJE=0.48 CJC=80E-12 VJC=0.53
+ MJC=0.3 TF=3.8E-10 TR=3.8e-9 TRB1=.02 XTB=1.5


*                (c)  2012 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=17/9/2009
*VERSION=1


.MODEL DSS5220V PNP IS=5.5e-13 NF=1.005 ISE=1.2e-13 NE=1.55 BF=590
+ VAF=21 IKF=2 ISC=1.8e-13 NC=1.39 BR=52 VAR=5.7 IKR=0.6 RE=0.067
+ RB=0.33 RC=0.012 CJE=147e-12 VJE=0.88 MJE=0.48 CJC=51e-12 VJC=0.51
+ MJC=0.33 TF=4.5e-10 TR=5.6e-9 QUASIMOD=1 RCO=0.66 GAMMA=1.3e-9
+ XTB=1.5 TRE1=0.004 TRB1=0.003 TRC1=0.004


 (c)  2009 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA


*DIODES_INC_SPICE_MODEL DXTP19020DP5
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG
*DATE=08/04/2013
*VERSION=1

.MODEL DXTP19020DP5 PNP IS=8.5E-13 NF=1 BF=530 VAF=25.8 ISE=1.2E-13
+ IKF=3.8 NE=1.48 BR=130 VAR=5.15 ISC=0.8E-13 NC=1.23 RC=0.0045 RB=0.15
+ RE=0.009 QUASIMOD=1 RCO=0.27 GAMMA=2E-10 CJC=112E-12 MJC=0.4 VJC=0.6
+ CJE=345E-12 MJE=0.53 VJE=0.95 TF=0.59E-9 TR=4.2E-9 TRC1=.003 TRB1=.003
+ TRE1=.003 XTB=1.4


*                (c)  2013 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*ZETEX FCX1147A Spice Model v1.0 Last Revised 3/1/03
    *
    .MODEL FCX1147A  PNP IS=1.272e-12 NF=0.989 ISE=2.5e-13 NE=1.65 BF=500 
    +               VAF=14.59 IKF=8 NR=1 ISC=8e-14 NC= 1.6 BR=90 VAR=3.1
    +               IKR=1.2 RE=15e-3 RB=145e-3 RC=13e-3 CJE=560e-12
    +               CJC=255e-12 VJC=0.6288 MJC=0.4048 TF=1.2e-9 TR=13e-9
    *
    *$
    *


*ZETEX FCX1149A Spice Model v1.0 Last Revised 3/1/03
    *
    .MODEL FCX1149A PNP IS=9.5e-13 NF=1.002 ISE=1.2e-13 NE=1.4 BF=520
    +              VAF=24.97 IKF=5 NR=0.997 ISC=4.5E-13 NC=1.25 BR=40
    +              VAR=2.51 IKR=0.7 RE=20e-3 RB=150e-3 RC=10e-3 
    +              CJE=490e-12 CJC=150e-12 VJC=1.094 MJC=0.4739
    +              TF=1e-9 TR=3.5e-9
    *
    *$
    *


*ZETEX FCX717 Spice Model v1.0 Last Revised 25/11/02
    *
    .MODEL FCX717 PNP IS =5.5E-13  BF =500 IKF =3 VAF =14.93 
    +              ISE=1.75E-13 NE =1.5 NR =1.00 BR =280 IKR=0.3 
    +              VAR=5.64 ISC=6.01E-13 NC =1.34 RB =0.3 RE =0.03
    +              RC =0.025 CJC=116.9E-12 MJC=0.3456 VJC=0.4576 
    +              CJE=223.6E-12 MJE=0.4803 VJE=0.9091 TF =1.2E-9 
    +              TR =2E-9
    *
    *$
    *


*ZETEX FCX718 Spice Model v1.0 Last Revised 11/03/02
    *
    .MODEL FCX718 PNP IS =6.8E-13  BF =480 IKF =2 VAF =23 
    +              ISE=0.8E-13 NE =1.5567 NR =1.00 BR =70 IKR=0.4 
    +              VAR=7 ISC=7.5E-14 NC =1.19 RB =0.085 RE =0.04
    +              RC =0.045 CJC=70.02E-12 MJC=0.4685 VJC=0.7714 
    +              CJE=203.6E-12 MJE=0.5029 VJE=0.9403 TF =0.71E-9 
    +              TR =23.7E-9
    *
    *$
    *


*ZETEX FCX789A Spice Model v1.0 Last Revised 2/1/03
    *
    .MODEL FCX789A PNP IS=8.5083E-13 NF=1.007 BF=540 IKF=3.4 VAF=15.5
    +ISE=1.60716E-13 NE=1.5059 NR=1.0025 BR=180 IKR=0.3 VAR=9 ISC=7.382E-14
    +NC=1.2275 RB=0.05 RE=0.32 RC=0.052 CJC=140E-12 MJC=0.335 VJC=0.26
    +CJE=300E-12 TF=0.73E-9 TR=4.2E-9
    *
    *$
    *


*ZETEX FMMT717 Spice Model v1.0 Last Revised 25/3/94
    *
    .MODEL FMMT717 PNP IS =5.5E-13  BF =500 IKF =3 VAF =14.93 
    +              ISE=1.75E-13 NE =1.5 NR =1.00 BR =280 IKR=0.3 
    +              VAR=5.64 ISC=6.01E-13 NC =1.34 RB =0.3 RE =0.03
    +              RC =0.025 CJC=116.9E-12 MJC=0.3456 VJC=0.4576 
    +              CJE=223.6E-12 MJE=0.4803 VJE=0.9091 TF =1.2E-9 
    +              TR =2E-9
    *
    *$
    *


*ZETEX FMMT718 Spice Model v1.0 Last Revised 15/12/93
    *
    .MODEL FMMT718 PNP IS =6.8E-13  BF =480 IKF =2 VAF =23 
    +              ISE=0.8E-13 NE =1.5567 NR =1.00 BR =70 IKR=0.4 
    +              VAR=7 ISC=7.5E-14 NC =1.19 RB =0.085 RE =0.04
    +              RC =0.045 CJC=70.02E-12 MJC=0.4685 VJC=0.7714 
    +              CJE=203.6E-12 MJE=0.5029 VJE=0.9403 TF =0.71E-9 
    +              TR =23.7E-9
    *
    *$
    *


*ZETEX FMMTL717 Spice Model v1.0 Last Revised 28/6/00
    *
    .MODEL FMMTL717 PNP IS=3E-13 NF=1 BF=450 IKF=1 VAF=17
    +ISE=5E-14 NE=1.6 NR=1 BR=80 VAR=7 ISC=5e-14 NC=1.45
    +RB=1.2 RE=0.076 RC=0.076 
    +CJC=62.5E-12 MJC=0.51 VJC=0.559 CJE=102E-12
    +TF =0.68E-9 TR =2e-9 
    *
    *$
    *


*ZETEX FMMTL718 Spice Model v1.0 Last Revised 7/8/00
    *
    .MODEL FMMTL718 PNP IS=2e-13 BF=550 XTB=1.4
    +NF=1 VAF=21 IKF=0.25 ISE=1e-13 NE=1.38 BR=55
    +NR=1 VAR=9.9 IKR=0.25 ISC=1e-13 NC=1.18
    +RE=0.06 RB=0.7 RC=0.06 
    +CJE=95.9e-12 VJE=0.897 MJE=0.468 CJC=43.4e-12
    +VJC=1.816 MJC=0.85 TF=495e-12 TR=25e-9
    *
    *$
    *


*ZETEX FZT1147A Spice Model v1.0 Last Revised 10/12/96
    *
    .MODEL FZT1147A  PNP IS=1.272e-12 NF=0.989 ISE=2.5e-13 NE=1.65 BF=500 
    +               VAF=14.59 IKF=8 NR=1 ISC=8e-14 NC= 1.6 BR=90 VAR=3.1
    +               IKR=1.2 RE=15e-3 RB=145e-3 RC=13e-3 CJE=560e-12
    +               CJC=255e-12 VJC=0.6288 MJC=0.4048 TF=1.2e-9 TR=13e-9
    *
    *$
    *


*ZETEX FZT1149A Spice Model v1.0 Last Revised 10/1/97
    *
    .MODEL FZT1149A PNP IS=9.5e-13 NF=1.002 ISE=1.2e-13 NE=1.4 BF=520
    +              VAF=24.97 IKF=5 NR=0.997 ISC=4.5E-13 NC=1.25 BR=40
    +              VAR=2.51 IKR=0.7 RE=20e-3 RB=150e-3 RC=10e-3 
    +              CJE=490e-12 CJC=150e-12 VJC=1.094 MJC=0.4739
    +              TF=1e-9 TR=3.5e-9
    *
    *$
    *


*ZETEX FZT717 Spice Model v1.0 Last Revised 25/11/02
    *
    .MODEL FZT717 PNP IS =5.5E-13  BF =500 IKF =3 VAF =14.93 
    +              ISE=1.75E-13 NE =1.5 NR =1.00 BR =280 IKR=0.3 
    +              VAR=5.64 ISC=6.01E-13 NC =1.34 RB =0.3 RE =0.03
    +              RC =0.025 CJC=116.9E-12 MJC=0.3456 VJC=0.4576 
    +              CJE=223.6E-12 MJE=0.4803 VJE=0.9091 TF =1.2E-9 
    +              TR =2E-9
    *
    *$
    *


*ZETEX FZT749 Spice Model v1.0 Last Revised 17/7/90
    *
    .MODEL FZT749 PNP IS =2.6E-13 BF =210 VAF=27 IKF=7 ISE=1.2E-13 NE =1.43 BR =70
    +VAR=14 IKR=.6 ISC=12.04E-13 NC =1.4474 NF =.999 NR =.982 RB =.3 RE =.065
    +RC =.04 CJE=410E-12 TF =.65E-9 CJC=140E-12 TR =12E-9 MJC=.35 VJC=.305
    *
    *$
    *


*ZETEX FZT788B Spice Model v1.0 Last Revised 2/1/92
    *
    .MODEL FZT788B PNP IS=1.252E-12 NF=1.0119 BF=770 IKF=2.6 VAF=11
    +ISE=1.3185E-13 NE=1.4832 NR=1.0047 BR=350 IKR=0.32 VAR=10.5
    +ISC=5.2648E-14 NC=1.186 RB=0.053 RE=0.031 RC=0.044 CJC=137E-12
    +MJC=0.34 VJC=0.275 CJE=280E-12 TF=0.75E-9 TR=2.3E-9
    *
    *$
    *


*ZETEX FZT789A Spice Model v1.0 Last Revised 3/1/92
    *
    .MODEL FZT789A PNP IS=8.5083E-13 NF=1.007 BF=540 IKF=3.4 VAF=15.5
    +ISE=1.60716E-13 NE=1.5059 NR=1.0025 BR=180 IKR=0.3 VAR=9 ISC=7.382E-14
    +NC=1.2275 RB=0.05 RE=0.32 RC=0.052 CJC=140E-12 MJC=0.335 VJC=0.26
    +CJE=300E-12 TF=0.73E-9 TR=4.2E-9
    *
    *$
    *


*ZETEX FZT948 Spice Model v1.0 Last Revised 14/3/97
    *
    .MODEL FZT948  PNP IS=1.5554E-12 NF=1.013 BF=208 IKF=14.7 VAF=22.4
    +ISE=1.48E-13 NE=1.485 NR=1.004 BR=140 IKR=1.34 VAR=15.4 
    +ISC=1.3946E-11 NC=1.702 RB=0.020 RE=0.0177 RC=0.015 CJC=440E-12  
    +MJC=0.3604 VJC=0.685 CJE=1.23E-9 TF=1.38E-9 TR=4.8E-9
    *
    *$
    *


*ZETEX FZT968 Spice Model v1.0 Last Revised 14/3/97
    *
    .MODEL FZT968  PNP IS=3.58E-12 NF=1.015 BF=500 IKF=11 VAF=11.4
    +ISE=1.576E-13 NE=1.42 NR=1.01 BR=245 IKR=1.4 VAR=8.4 ISC=1.48E-11
    +NC=1.637 RB=0.024 RE=0.0164 RC=0.0235 CJC=438E-12 MJC=0.361 
    +VJC=0.673 CJE=1.05E-9 TF=1.38E-9 TR=2.3E-9
    *
    *$
    *


*ZETEX ZTX1147A Spice Model v1.0 Last Revised 10/12/96
    *
    .MODEL ZTX1147A  PNP IS=1.272e-12 NF=0.989 ISE=2.5e-13 NE=1.65 BF=500 
    +               VAF=14.59 IKF=8 NR=1 ISC=8e-14 NC= 1.6 BR=90 VAR=3.1
    +               IKR=1.2 RE=15e-3 RB=145e-3 RC=13e-3 CJE=560e-12
    +               CJC=255e-12 VJC=0.6288 MJC=0.4048 TF=1.2e-9 TR=13e-9
    *
    *$
    *


*ZETEX ZTX1149A Spice Model v1.0 Last Revised 10/1/97
    *
    .MODEL ZTX1149A PNP IS=9.5e-13 NF=1.002 ISE=1.2e-13 NE=1.4 BF=520
    +              VAF=24.97 IKF=5 NR=0.997 ISC=4.5E-13 NC=1.25 BR=40
    +              VAR=2.51 IKR=0.7 RE=20e-3 RB=150e-3 RC=10e-3 
    +              CJE=490e-12 CJC=150e-12 VJC=1.094 MJC=0.4739
    +              TF=1e-9 TR=3.5e-9
    *
    *$
    *


*ZETEX ZTX718  Spice Model v1.0 Last Revised 15/12/93
    *
    .MODEL ZTX718 PNP IS =6.8E-13  BF =480 IKF =2 VAF =23 
    +              ISE=0.8E-13 NE =1.5567 NR =1.00 BR =70 IKR=0.4 
    +              VAR=7 ISC=7.5E-14 NC =1.19 RB =0.085 RE =0.04
    +              RC =0.045 CJC=70.02E-12 MJC=0.4685 VJC=0.7714 
    +              CJE=203.6E-12 MJE=0.5029 VJE=0.9403 TF =0.71E-9 
    +              TR =23.7E-9
    *
    *$
    *


*ZETEX ZTX749 Spice Model v1.0 Last Revised 17/7/90
    *
    .MODEL ZTX749 PNP IS =2.6E-13 BF =210 VAF=27 IKF=7 ISE=1.2E-13 NE =1.43 BR =70
    +VAR=14 IKR=.6 ISC=12.04E-13 NC =1.4474 NF =.999 NR =.982 RB =.3 RE =.065
    +RC =.04 CJE=410E-12 TF =.65E-9 CJC=140E-12 TR =12E-9 MJC=.35 VJC=.305
    *
    *$
    *


*ZETEX ZTX788A Spice Model v1.0 Last Revised 3/6/92
    *
    .MODEL ZTX788A PNP IS=1.2016E-12 NF=1.0186 BF=490 IKF=3.8 VAF=10.8
    +ISE=2.2E-13 NE=1.57 NR=1.011 BR=190 IKR=0.35 VAR=13.6 
    +ISC=2.38E-12 NC=1.693 RB=0.050 RE=0.028 RC=0.042 CJC=156E-12  
    +MJC=0.4266 VJC=0.9718 CJE=335E-12 TF=0.78E-9 TR=4.6E-9
    *
    *$
    *


*ZETEX ZTX788B Spice Model v1.0 Last Revised 2/1/92
    *
    .MODEL ZTX788B PNP IS=1.252E-12 NF=1.0119 BF=770 IKF=2.6 VAF=11
    +ISE=1.3185E-13 NE=1.4832 NR=1.0047 BR=350 IKR=0.32 VAR=10.5
    +ISC=5.2648E-14 NC=1.186 RB=0.053 RE=0.031 RC=0.044 CJC=137E-12
    +MJC=0.34 VJC=0.275 CJE=280E-12 TF=0.75E-9 TR=2.3E-9
    *
    *$
    *


*ZETEX ZTX789A Spice Model v1.0 Last Revised 3/1/92
    *
    .MODEL ZTX789A PNP IS=8.5083E-13 NF=1.007 BF=540 IKF=3.4 VAF=15.5
    +ISE=1.60716E-13 NE=1.5059 NR=1.0025 BR=180 IKR=0.3 VAR=9 ISC=7.382E-14
    +NC=1.2275 RB=0.05 RE=0.32 RC=0.052 CJC=140E-12 MJC=0.335 VJC=0.26
    +CJE=300E-12 TF=0.73E-9 TR=4.2E-9
    *
    *$
    *


*ZETEX ZTX948 Spice Model v1.0 Last Revised 26/5/92
    *
    .MODEL ZTX948  PNP IS=1.5554E-12 NF=1.013 BF=208 IKF=14.7 VAF=22.4
    +ISE=1.48E-13 NE=1.485 NR=1.004 BR=140 IKR=1.34 VAR=15.4 
    +ISC=1.3946E-11 NC=1.702 RB=0.020 RE=0.0177 RC=0.015 CJC=440E-12  
    +MJC=0.3604 VJC=0.685 CJE=1.23E-9 TF=1.38E-9 TR=4.8E-9
    *
    *$
    *


*ZETEX ZTX968 Spice Model v1.0 Last Revised 25/5/92
    *
    .MODEL ZTX968  PNP IS=3.58E-12 NF=1.015 BF=500 IKF=11 VAF=11.4
    +ISE=1.576E-13 NE=1.42 NR=1.01 BR=245 IKR=1.4 VAR=8.4 ISC=1.48E-11
    +NC=1.637 RB=0.024 RE=0.0164 RC=0.0235 CJC=438E-12 MJC=0.361 
    +VJC=0.673 CJE=1.05E-9 TF=1.38E-9 TR=2.3E-9
    *
    *$
    *


*ZETEX ZUMT717 Spice Model v1.0 Last Revised 14/12/00
    *
    .MODEL ZUMT717 PNP IS =1.57E-13 BF =500 IKF =0.86
    +VAF =14.93 ISE=0.5E-13 NE =1.5 NR =1.00 BR =280
    +IKR=0.086 VAR=5.64 ISC=1.72E-13 NC =1.34 RB =1.05 
    +RE =0.105 RC =0.088 CJC=48.7E-12 MJC=0.3456
    +VJC=0.4576 CJE=93.2E-12 MJE=0.4803 VJE=0.9091
    +TF =1.2E-9 TR =2E-9 
    *
    *$
    *


*ZETEX ZUMT718 Spice Model v1.0 Last Revised 24/1/03
    *
    .MODEL ZUMT718 PNP IS =3.1E-13  BF =550 IKF =0.45 VAF =23 
    +ISE=3.6E-14 NE =1.557 BR =70 IKR=0.18 VAR=7 ISC=3.4E-14 NC =1.19 
    +RB =.188 RE =0.089 RC =0.1 CJC=31.5E-12 MJC=0.469 VJC=0.771 
    +CJE=91.6E-12 MJE=0.503 VJE=0.94 TF =0.71E-9 TR =23.7E-9
    *
    *$
    *


*ZETEX ZX5T2E6 Spice Model v1.0 Last revision 07/06/07
    *
    .MODEL ZX5T2E6 PNP IS=11E-13 BF=610 NF=1 VAF=20.1 IKF=2.5 ISE=1.1E-13
    +NE=1.49 BR=75 NR=1 VAR=4.3 IKR=1 ISC=1.1e-13 NC=1.31 RE=0.0072 RB=0.3
    +RC=0.012 CJE=460E-12 VJE=1.0 MJE=0.54 CJC=170E-12 VJC=0.62 MJC=0.42
    +TF=9E-10 TR=8.5e-9 RCO=0.5 GAMMA=25E-10 QUASIMOD=1 XTB=1.5 TRE1=.003
    +TRB1=.003  TRC1=.003
    *
    *$
    *


*ZETEX ZXT10P12DE6 Spice Model v1.0 Last Revised 25/11/02
    *
    .MODEL ZXT10P12DE6 PNP IS =5.5E-13  BF =500 IKF =3 VAF =14.93 
    +              ISE=1.75E-13 NE =1.5 NR =1.00 BR =280 IKR=0.3 
    +              VAR=5.64 ISC=6.01E-13 NC =1.34 RB =0.3 RE =0.03
    +              RC =0.025 CJC=116.9E-12 MJC=0.3456 VJC=0.4576 
    +              CJE=223.6E-12 MJE=0.4803 VJE=0.9091 TF =1.2E-9 
    +              TR =2E-9
    *
    *$
    *


*ZETEX ZXT10P20DE6 Spice Model v1.0 Last Revised 11/03/02
    *
    .MODEL  ZXT10P20DE6 PNP IS =6.8E-13  BF =480 IKF =2 VAF =23 
    +              ISE=0.8E-13 NE =1.5567 NR =1.00 BR =70 IKR=0.4 
    +              VAR=7 ISC=7.5E-14 NC =1.19 RB =0.085 RE =0.04
    +              RC =0.045 CJC=70.02E-12 MJC=0.4685 VJC=0.7714 
    +              CJE=203.6E-12 MJE=0.5029 VJE=0.9403 TF =0.71E-9 
    +              TR =23.7E-9
    *
    *$
    *


*ZETEX ZXT13P12DE6 Spice Model v1.0 Last Revised 1/3/02
    *This single transistor Model is one half of a pair in package.
    *
    .MODEL ZXT13P12DE6 PNP IS=1.7E-12 NF=1 BF=530 IKF=1 NK=0.43
    +VAF=15 ISE=1E-13 NE=1.5 NR=1 BR=200 VAR=5 ISC=1e-13
    +NC=1.5 IKR=0.13 RB=1.1 RE=.013 RC=.013 CJC=257E-12
    +MJC=0.34 VJC=0.54 CJE=645E-12 MJE=0.62 VJE=1.3
    +TF=2E-9 TR=5e-9 XTB=1.5
    *
    *$
    *


*ZETEX ZXT13P20DE6 Spice Model v1.0  Last Revised 17/1/05
    *
    .MODEL ZXT13P20DE6 PNP IS=1.3E-12 NF=1 BF=450 IKF=6 VAF=15 
    +ISE=0.8E-13 NE=1.4 NR=1 BR=210 VAR=5 ISC=4e-14 NC=1.18 RB=1 
    +RE=.0075 RC=.07 CJC=235E-12 MJC=0.38 VJC=0.51 CJE=674E-12 
    +MJE=0.52 VJE=0.95 TF=1.1E-9 TR=3.6e-9 XTB=1.5 
    *
    *$
    *


*ZETEX ZXTP07012EFF Spice Model v1.0 Last Revised 14/05/07
    *
    .MODEL X07P12E PNP IS=1.3E-12 BF=660 NF=1 VAF=11 IKF=4 ISE=2E-13 NE=1.48
    +BR=230 NR=1 VAR=6 IKR=0.65 ISC=1.2e-13 NC=1.33 RE=0.035 RB=0.1 RC=0.018 
    +CJE=280E-12 VJE=0.8 MJE=0.47 CJC=145E-12 VJC=0.75 MJC=0.46
    +TF=3.3E-10 TR=2e-9 RCO=0.26 GAMMA=20E-10 QUASIMOD=1 
    +TRB1=0.001 TRE1=0.001 TRC1=0.001 XTB=1.5
    *
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=18/09/2014
*VERSION=1
*
*
.MODEL ZXTP19020CFF PNP IS=6.3E-13 NF=1 BF=400 VAF=21.5 ISE=1.2E-13 IKF=4.6
+NE=1.42 BR=140 VAR=4.9 ISC=1.3E-13 NC=1.25 RC=0.0045 RB=0.15 RE=0.009
+CJC=145E-12 MJC=0.33 VJC=0.6 CJE=379E-12 MJE=0.47 VJE=0.85 TF=0.4E-9
+TR=4.5E-9 XTB=1.4 QUASIMOD=1 RCO=0.18 GAMMA=0.3E-9 TRC1=.003 TRB1=.003
+TRE1=.003
*
*$
*         (c)  2014 Diodes Inc
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*

.SIMULATOR DEFAULT


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=18/09/2014
*VERSION=1
*
.MODEL ZXTP19020DFF PNP IS=8.5E-13 NF=1 BF=530 VAF=25.8 ISE=1.2E-13
+ IKF=3.8 NE=1.48 BR=130 VAR=5.15 ISC=0.8E-13 NC=1.23 RC=0.0045 RB=0.15
+ RE=0.009 QUASIMOD=1 RCO=0.27 GAMMA=2E-10 CJC=112E-12 MJC=0.4 VJC=0.6
+ CJE=345E-12 MJE=0.53 VJE=0.95 TF=0.59E-9 TR=4.2E-9 TRC1=.003 TRB1=.003
+ TRE1=.003 XTB=1.4
*
*$
*         (c)  2014 Diodes Inc
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*

.SIMULATOR DEFAULT


*DIODES_INC_SPICE_MODEL ZXTP19020DG
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG
*DATE=7/01/2013
*VERSION=1

.MODEL ZXTP19020DG PNP IS=8.5E-13 NF=1 BF=530 VAF=25.8 ISE=1.2E-13
+ IKF=3.8 NE=1.48 BR=130 VAR=5.15 ISC=0.8E-13 NC=1.23 RC=0.0045 RB=0.15
+ RE=0.009 QUASIMOD=1 RCO=0.27 GAMMA=2E-10 CJC=112E-12 MJC=0.4 VJC=0.6
+ CJE=345E-12 MJE=0.53 VJE=0.95 TF=0.59E-9 TR=4.2E-9 TRC1=.003 TRB1=.003
+ TRE1=.003 XTB=1.4


*                (c)  2013 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*DIODES_INC_SPICE_MODEL ZXTP19020DZ
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG
*DATE=7/01/2013
*VERSION=1

.MODEL ZXTP19020DZ PNP IS=8.5E-13 NF=1 BF=530 VAF=25.8 ISE=1.2E-13
+ IKF=3.8 NE=1.48 BR=130 VAR=5.15 ISC=0.8E-13 NC=1.23 RC=0.0045 RB=0.15
+ RE=0.009 QUASIMOD=1 RCO=0.27 GAMMA=2E-10 CJC=112E-12 MJC=0.4 VJC=0.6
+ CJE=345E-12 MJE=0.53 VJE=0.95 TF=0.59E-9 TR=4.2E-9 TRC1=.003 TRB1=.003
+ TRE1=.003 XTB=1.4


*                (c)  2013 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*ZETEX ZXTP2006E6 Spice Model v1.0 Last revision 07/06/07
    *
    .MODEL ZXTP2006E6 PNP IS=11E-13 BF=610 NF=1 VAF=20.1 IKF=2.5 ISE=1.1E-13
    +NE=1.49 BR=75 NR=1 VAR=4.3 IKR=1 ISC=1.1e-13 NC=1.31 RE=0.0072 RB=0.3
    +RC=0.012 CJE=460E-12 VJE=1.0 MJE=0.54 CJC=170E-12 VJC=0.62 MJC=0.42
    +TF=9E-10 TR=8.5e-9 RCO=0.5 GAMMA=25E-10 QUASIMOD=1 XTB=1.5 TRE1=.003
    +TRB1=.003  TRC1=.003
    *
    *$
    *


*ZETEX ZXTP23015CFH Spice Model v2.0 Last revision 21/05/07
    *
    .MODEL ZXTP23015CFH PNP IS=6.5E-13 BF=470 NF=1 VAF=16.5 IKF=6 ISE=0.6E-13 NE=1.4
    +BR=240 NR=1 VAR=3.1 ISC=1.3E-13 NC=1.45 RE=0.0122 RB=0.1 RC=0.0051
    +CJE=540E-12 VJE=0.95 MJE=0.3 CJC=202E-12 VJC=0.45 MJC=0.3 TF=0.55E-9 TR=1.4E-9 
    +TRB1=0.007 XTB=1.4
    *
    *$
    *


*ZETEX ZXTP25012EFH Spice Model v1.0 Last Revised 16/10/07
    *
    .MODEL ZXTP25012EFH PNP IS=5.5E-13 NF=1 BF=650 VAF=20 ISE=1.9E-13
    + IKF=2.5 NE=1.53 BR=72 VAR=4.1 ISC=7E-14 NC=1.2 IKR=0.25 RC=0.010
    + RB=0.15 RE=0.006 QUASIMOD=1 RCO=0.7 GAMMA=1.7E-9 CJC=57E-12 MJC=0.35
    + VJC=0.53 CJE=168E-12 MJE=0.54 VJE=0.95 TF=0.42E-9 TR=8.4E-9 TRC1=0.005
    + TRB1=0.005 TRE1=0.005 XTB=1.4
    *
    *$
    *


*DIODES_INC_SPICE_MODEL ZXTP25012EZ
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL
*DATE=9Apr2012
*VERSION=1


.MODEL ZXTP25012EFH PNP IS=5.5E-13 NF=1 BF=650 VAF=20 ISE=1.9E-13
+ IKF=2.5 NE=1.53 BR=72 VAR=4.1 ISC=7E-14 NC=1.2 IKR=0.25 RC=0.010
+ RB=0.15 RE=0.006 QUASIMOD=1 RCO=0.7 GAMMA=1.7E-9 CJC=57E-12 MJC=0.35
+ VJC=0.53 CJE=168E-12 MJE=0.54 VJE=0.95 TF=0.42E-9 TR=8.4E-9 TRC1=0.005
+ TRB1=0.005 TRE1=0.005 XTB=1.4


*                (c)  2011 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*ZETEX ZXTP25015DFH Spice Model v1.0 Last revision 30/05/07
    *
    .MODEL ZXTP25015DFH PNP IS=5E-13 BF=480 NF=1 VAF=18 IKF=2.5 ISE=1.2E-13
    +NE=1.48 BR=65 NR=1 VAR=6.9 IKR=1 ISC=8e-14 NC=1.31 RE=0.0125 RB=0.11
    +RC=0.0089 CJE=191E-12 VJE=1.05 MJE=0.56 CJC=68E-12 VJC=0.52 MJC=0.31
    +TF=3.7E-10 TR=6.5e-9 RCO=0.39 GAMMA=8.5E-10 QUASIMOD=1 XTB=1.5 TRE1=.004
    +TRB1=.004 TRC1=.004
    *
    *$
    *


*ZETEX ZXTP25020BFH Spice Model v1.0 Last revision 19/07/07
    *
    .MODEL ZXTP25020BFH PNP IS=1.7E-13 NF=1 BF=220 IKF=3.3 VAF=21 ISE=8E-14 
    +NE=1.45 NR=1 BR=44 IKR=1 VAR=7 ISC=8e-14 NC=1.4 RE=0.0133 RB=0.12 
    +RC=0.0092 RCO=0.5 GAMMA=2.5E-9 CJC=62E-12 MJC=0.33 VJC=0.55 CJE=226E-12 
    +MJE=0.34 VJE=0.7 TF=4.1E-10 TR=10e-9 XTB=1.5 TRE1=0.002 TRB1=0.002 
    +TRC1=0.002 QUASIMOD=1
    *
    *$
    *


*ZETEX ZXTP25020CFF Spice Model v1.0 Last revision 19/07/07
    *
    .MODEL ZXTP25020CFF PNP IS=2.5E-13 BF=400 NF=1 VAF=18.7 IKF=3.8 ISE=1.9E-13 NE=1.5
    +BR=110 NR=1 VAR=5 IKR=2 ISC=1.3e-13 NC=1.45 RE=0.01 RB=0.2 RC=0.02 
    +CJE=199E-12 VJE=0.9 MJE=0.48 CJC=80E-12 VJC=0.53 MJC=0.3 TF=3.8E-10 TR=3.8e-9
    +TRB1=.02 XTB=1.5
    *
    *$
    *


*ZETEX ZXTP25020CFH Spice Model v1.0 Last revision 29/01/07
    *
    .MODEL ZXTP25020CFH PNP IS=2.5E-13 NF=1 BF=400 IKF=3.8 VAF=18.7 ISE=1.9E-13
    +NE=1.5 NR=1 BR=110 IKR=2 VAR=5 ISC=1.3e-13 NC=1.45 RB=0.2 RE=0.01 RC=0.02 
    +CJC=80E-12 MJC=0.3 VJC=0.53 CJE=199E-12 MJE=0.48 VJE=0.9 TF=3.8E-10 
    +TR=3.8e-9 XTB=1.5 TRB1=.02 
    *
    *$
    *


*ZETEX ZXTP25020DFH Spice Model v1.0 Last revision 20/07/07
    *
    .MODEL ZXTP25020DFH PNP IS=4E-13 NF=1 BF=510 IKF=3.5 VAF=23 ISE=10E-14 NE=1.49
    +NR=1 BR=97 IKR=1 VAR=4.5 ISC=7.5e-14 NC=1.2 RE=0.0136 RB=0.12 RC=0.0094 RCO=0.9
    +GAMMA=2.5E-9 CJC=60E-12 MJC=0.33 VJC=0.51 CJE=183E-12 MJE=0.5 VJE=0.9 TF=3.4E-10
    +TR=4.5e-9 XTB=1.5 TRE1=.002 TRB1=.002 TRC1=.002 QUASIMOD=1
    *
    *$
    *


*ZETEX ZXTP25020DFL Spice Model v1.0 Last revision 20/07/07
    *
    .MODEL ZXTP25020DFL PNP IS=4E-13 NF=1 BF=510 IKF=3.5 VAF=23 ISE=10E-14 NE=1.49
    +NR=1 BR=97 IKR=1 VAR=4.5 ISC=7.5e-14 NC=1.2 RE=0.0136 RB=0.12 RC=0.0094 RCO=0.9
    +GAMMA=2.5E-9 CJC=60E-12 MJC=0.33 VJC=0.51 CJE=183E-12 MJE=0.5 VJE=0.9 TF=3.4E-10
    +TR=4.5e-9 XTB=1.5 TRE1=.002 TRB1=.002 TRC1=.002 QUASIMOD=1
    *
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=21/01/2011
*VERSION=1
*
.MODEL ZXTP26020DMF PNP IS=5.5e-13 NF=1.005 ISE=1.2e-13 NE=1.55 BF=590
+ VAF=21 IKF=2 ISC=1.8e-13 NC=1.39 BR=52 VAR=5.7 IKR=0.6 RE=0.067
+ RB=0.33 RC=0.012 CJE=147e-12 VJE=0.88 MJE=0.48 CJC=51e-12 VJC=0.51
+ MJC=0.33 TF=4.5e-10 TR=5.6e-9 QUASIMOD=1 RCO=0.66 GAMMA=1.3e-9
+ XTB=1.5 TRE1=0.004 TRB1=0.003 TRC1=0.004
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=27JAN2011
*VERSION=1
*
.MODEL ZXTP717MA PNP IS=5.5E-13  BF=500 IKF=3 VAF=14.93 
+ ISE=1.75E-13 NE=1.5 NR=1.00 BR=280 IKR=0.3 
+ VAR=5.64 ISC=6.01E-13 NC=1.34 RB=0.3 RE=0.03
+ RC=0.025 CJC=116.9E-12 MJC=0.3456 VJC=0.4576 
+ CJE=223.6E-12 MJE=0.4803 VJE=0.9091 TF=1.2E-9 
+ TR=2E-9
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=27JAN2011
*VERSION=1
*
.MODEL ZXTP718MA PNP IS=6.8E-13  BF=480 IKF=2 VAF=23 
+ ISE=0.8E-13 NE=1.5567 NR=1.00 BR=70 IKR=0.4 
+ VAR=7 ISC=7.5E-14 NC=1.19 RB=0.085 RE=0.04
+ RC=0.045 CJC=70.02E-12 MJC=0.4685 VJC=0.7714 
+ CJE=203.6E-12 MJE=0.5029 VJE=0.9403 TF=0.71E-9 
+ TR=23.7E-9
*
*$


*DIODES_INC_SPICE_MODEL DSS2515M
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=02Apr2012
*VERSION=1

 .MODEL DSS2515M NPN(IS=6E-14 BF=450 NF=.98 ISE=1.25E-14 NE=1.25 BR=40 NR=.99 ISC=2E-14 NC=1.15 RC=.05 RE=.05 CJE=36.08p VJE.75 MJE=.37 CJC=11.196p VJC=.5 MJC=.3 VAF=20 IKF=1.1 NK=.77)

*                (c)  2011 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*DIODES_INC_SPICE_MODEL_DSL12AW
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=24/07/2015
*VERSION=1

.MODEL DSL12AW PNP IS=25E-13 BF=250 NF=1 VAF=18.7 IKF=3.8
+ ISE=1.9E-13 NE=1.5 BR=100 NR=1 VAR=5 IKR=2 ISC=1.3e-13 NC=1.45 RE=0.01
+ RB=0.2 RC=0.02 CJE=199E-12 VJE=0.9 MJE=0.48 CJC=80E-12 VJC=0.53
+ MJC=0.3 TF=3.8E-10 TR=3.8e-9 TRB1=.02 XTB=1.4


*                (c)  2015 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*SRC=MMBTH10;DI_MMBTH10;BJTs NPN; Si;  25.0V  50.0mA  650MHz   Diodes Inc. Transistor
 

.MODEL DI_MMBTH10  NPN (IS=1.26e-016 NF=1.00 BF=95.8 VAF=114
+ IKF=24.3m ISE=1.28p NE=2.00 BR=4.00 NR=1.00
+ VAR=16.0 IKR=60.0m RE=1.51 RB=6.05 RC=0.605
+ XTB=1.5 CJE=6.27p VJE=1.10 MJE=0.500 CJC=2.02p VJC=0.300
+ MJC=0.300 TF=130p TR=27.4n EG=1.12 )


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=21JAN2011
*VERSION=1
*
.MODEL BST39 NPN IS=5.32E-14 NF=1 BF=230 IKF=1.5 VAF=1500
+ ISE=2.1E-14 NE=1.385 NR=1.05 BR=8 IKR=0.7 VAR=64 ISC=6.42E-12
+ NC=1.25 RB=0.5 RE=0.224 RC=0.134 QUASIMOD=1 RCO=80 GAMMA=4E-7
+ CJC=9.5E-12 MJC=0.32 VJC=0.4 CJE=115E-12 MJE=0.37 VJE=0.8
+ TF=1.3E-9 TR=16E-6 TRC1=.004 TRB1=.004 TRE1=.004 XTB=1.4
*
*$


*SRC=DN350T05;DI_DN350T05;BJTs NPN; Si;  350V  0.500A  50.0MHz   Diodes Inc. NPN BJT
.MODEL DI_DN350T05  NPN (IS=177f NF=1.00 BF=185 VAF=337
+ IKF=0.182 ISE=68.4p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.450 RE=1.26 RB=5.05 RC=0.505
+ XTB=1.5 CJE=69.1p VJE=1.10 MJE=0.500 CJC=7.10p VJC=0.300
+ MJC=0.300 TF=3.05n TR=116n EG=1.12 )


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_IM
*SIMULATOR=PSPICE
*DATE=29May2013
*VERSION=1
*

*
.MODEL DXT458P5 NPN IS=5.32E-14 NF=1 BF=230 IKF=1.5 VAF=1500
+ ISE=2.1E-14 NE=1.385 NR=1.05 BR=8 IKR=0.7 VAR=64 ISC=6.42E-12
+ NC=1.25 RB=0.5 RE=0.224 RC=0.134 QUASIMOD=1 RCO=80 GAMMA=4E-7
+ CJC=9.5E-12 MJC=0.32 VJC=0.4 CJE=115E-12 MJE=0.37 VJE=0.8
+ TF=1.3E-9 TR=16E-6 TRC1=.004 TRB1=.004 TRE1=.004 XTB=1.4
*


*                (c)  2013 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=08FEB2011
*VERSION=2
*
.MODEL DZT5551 NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14
+ NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23
+ CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9
+ TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=13OCT2010
*VERSION=1
*
.MODEL DXT5551P5 NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14
+ NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23
+ CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9
+ TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7
*
*$


*SRC=DXTA42;DI_DXTA42;BJTs NPN; Si;  300V  0.500A  140MHz    -
.MODEL DI_DXTA42  NPN (IS=19.4f NF=1.00 BF=144 VAF=312
+ IKF=58.6m ISE=31.4f NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=90.0m RE=0.895 RB=3.58 RC=0.358
+ XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=8.82p VJC=0.300
+ MJC=0.300 TF=751p TR=185n EG=1.12 )


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=27JUL2010
*VERSION=2
*
.MODEL DZT5551 NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14
+ NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23
+ CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9
+ TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7
*
*


*SRC=DZTA42;DI_DZTA42;BJTs NPN; Si;  300V  0.500A  140MHz    -
.MODEL DI_DZTA42  NPN (IS=19.4f NF=1.00 BF=144 VAF=312
+ IKF=58.6m ISE=31.4f NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=90.0m RE=0.895 RB=3.58 RC=0.358
+ XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=8.82p VJC=0.300
+ MJC=0.300 TF=751p TR=185n EG=1.12 )


*ZETEX FCX458 Spice Model v3.0 Last Revised 20/09/2007
    *
    .MODEL FCX458 NPN IS=5.32E-14 NF=1 BF=230 IKF=1.5 VAF=1500
    + ISE=2.1E-14 NE=1.385 NR=1.05 BR=8 IKR=0.7 VAR=64 ISC=6.42E-12
    + NC=1.25 RB=0.5 RE=0.224 RC=0.134 QUASIMOD=1 RCO=80 GAMMA=4E-7
    + CJC=9.5E-12 MJC=0.32 VJC=0.4 CJE=115E-12 MJE=0.37 VJE=0.8
    + TF=1.3E-9 TR=16E-6 TRC1=.004 TRB1=.004 TRE1=.004 XTB=1.4
    *
    *$
    *


*
.MODEL FCX495 NPN IS=1E-13 NF=1 BF=205 IKF=4 VAF=300 ISE=1E-13
+ NE=1.5 NR=0.98 BR=24 VAR=45 ISC=1e-13 NC=1.2 RB=0.4 RE=0.07
+ RC=0.08 RCO=17 GAMMA=9E-8 CJC=15.3E-12 MJC=0.27 VJC=0.35 CJE=114E-12
+ MJE=0.33 VJE=0.68 TF=0.8E-9 TR=120e-9 XTB=1.4 QUASIMOD=1
*
*$


*ZETEX  FCX658A Spice Model v2.0 Last Revised 21/1/05
    *
    .MODEL FCX658A NPN IS=1.3E-13 NF=1.0025 BF=150 IKF=0.7 VAF=154
    +ISE=0.7E-13 NE=1.4 NR=1.0012 BR=8 IKR=0.42 VAR=48
    +ISC=3E-13 NC=1.3 RB=0.04 RE=0.0875 RC=0.05 
    +CJC=24.77E-12 MJC=0.322 VJC=0.432 CJE=354E-12 MJE=0.36
    +VJE=0.824 TF=0.62E-9 TR=700E-9 XTB=1.55
    +QUASIMOD=1 RCO=38 GAMMA=20E-8
    *
    *$
    *


*
.MODEL FMMT455 NPN IS =5.6E-14 BF =260 VAF=660 NF =.992 IKF=.155 ISE=3.1E-14
+NE =1.2502 BR =24 VAR=6 NR =.999 IKR=.114 ISC=1.406E-13 NC =1.13 RB =1.1
+RE =.161 RC =.0339 CJC=11.6E-12 TF =.75E-9 CJE=53.5E-12 TR =100E-9 VJC=.505
+MJC=.455
*
*$


*ZETEX FMMT458 Spice Model v3.0 Last Revised 20/09/2007
    *
    .MODEL FMMT458 NPN IS=5.32E-14 NF=1 BF=230 IKF=1.5 VAF=1500
    + ISE=2.1E-14 NE=1.385 NR=1.05 BR=8 IKR=0.7 VAR=64 ISC=6.42E-12
    + NC=1.25 RB=0.5 RE=0.224 RC=0.134 QUASIMOD=1 RCO=80 GAMMA=4E-7
    + CJC=9.5E-12 MJC=0.32 VJC=0.4 CJE=115E-12 MJE=0.37 VJE=0.8
    + TF=1.3E-9 TR=16E-6 TRC1=.004 TRB1=.004 TRE1=.004 XTB=1.4
    *
    *$
    *


*ZETEX FMMT459 Spice Model v2.0 Last Revised 24/2/05
    *
    .MODEL FMMT459 NPN IS=4E-14 NF=1 BF=130 VAF=1000 ISE=4E-13 NE=1.59 
    +RCO=60 GAMMA=1E-7 NR=1 BR=10 VAR=100 ISC=1e-10 NC=1.6 IKR=30E-3
    +RB=1 RE=.1 RC=.1 CJC=9E-12 MJC=0.36 VJC=0.51 CJE=99E-12 MJE=0.42
    +VJE=0.88 TF=2E-9 TR=1.2e-6 XTB=1.5 QUASIMOD=1
    *
    *$
    *


*ZETEX FMMT494 Spice Model v2.0 Last Revised 24/2/05
    *
    .MODEL FMMT494 NPN IS =6E-14 NF =0.99 BF =250 IKF=0.9 NK=0.7 VAF=270 
    +ISE=1E-14 NE =1.2 NR =0.98 BR =30 IKR=0.5 VAR=27 ISC=1.2e-13 NC =1.2
    +RB =0.2 RE =0.08 RC =0.08 RCO=7.5 GAMMA=1E-8 CJC=15.9E-12 MJC=0.4
    +VJC=0.51 CJE=108E-12 MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4
    +QUASIMOD=1
    *
    *$
    *


*ZETEX FMMT495 Spice Model v1.0 Last Revised 8/5/2006
    *
    .MODEL FMMT495 NPN IS =1E-13 NF =1 BF =205 IKF=4 VAF=300 ISE=1E-13
    +NE =1.5 NR =0.98 BR =24 VAR=45 ISC=1e-13 NC =1.2 RB =.4 RE =.07
    +RC =.08 RCO=17 GAMMA=9E-8 CJC=15.3E-12 MJC=0.27 VJC=0.35 CJE=114E-12
    +MJE=0.33 VJE=0.68 TF =0.8E-9 TR =120e-9 XTB=1.4 QUASIMOD=1
    *
    *$
    *


*ZETEX FMMT497 Spice Model v2.0 Last Revised 24/2/05
    *
    .MODEL FMMT497 NPN IS =5E-14 NF =1
    +BF =250 IKF=500E-3 VAF=1020 ISE=2.5E-14 NE =1.38
    +RCO=60 GAMMA=10E-7 NR =1 BR =5 IKR=0 VAR=55 ISC=5e-12
    +NC =1.31 RB =3 RE =0.05 RC =0.05 QUASIMOD=1
    +CJC=10.95E-12 MJC=0.265 VJC=0.3905 CJE=125.2E-12 
    +TF =0.6E-9 TR =0.66e-6 XTB=1.4 
    *
    *$
    *


*ZETEX FMMT624 Spice Model v1.0 Last Revised 12/7/93
    *
    .MODEL FMMT624  NPN IS =6.855E-13 NF =1.0037 BF =540 IKF=0.95 VAF=231
    +               ISE=2.23E-13 NE =1.4195 NR =1.0024 BR =100 IKR=2 
    +               VAR=61 ISC=3E-12 NC =1.2276 RB =0.036 RE =0.065 
    +               RC =0.1 CJC=28E-12 MJC=0.4348 VJC=0.4934 CJE=207E-12 
    +               TF =0.85E-9 TR =49E-9
    *
    *$
    *


*ZETEX FMMT625 Spice Model v1.0 Last Revised 13/7/93
    *
    .MODEL FMMT625  NPN IS =6.2024E-13 NF =1.0037 BF =450 IKF=0.6 VAF=428
    +               ISE=2.3242E-13 NE =1.4689 NR =1.0033 BR =250 IKR=1.7 
    +               VAR=73 ISC=7.66E-13 NC =1.1546 RB =0.036 RE =0.090 
    +               RC =0.143 CJC=24.5E-12 MJC=0.4246 VJC=0.4425 CJE=210E-12 
    +               TF =0.99E-9 TR =60E-9
    *
    *$
    *


*ZETEX FMMT6517 Spice Model v1.0 Last Revised 11/06/2007
    *
    .MODEL FMMT6517  NPN IS=5.32E-14 NF=0.992 BF=210 IKF=0.5 VAF=1050
    +XTB=1.4 ISE=2.1E-14 NE=1.385 NR=1.05 BR=16.3 IKR=1.8 VAR=99 
    +ISC=6.42E-12 NC=1.25 RB=0.5 RE=0.224 RC=0.134 CJC=8.5E-12
    +MJC=0.3966 VJC=0.4332 CJE=122E-12 TF=1.66E-9 TR=16E-6
    +QUASIMOD=1 RCO=70 GAMMA=1.6E-7 VO=10  
    *
    *$
    *


*ZETEX FMMTA42 Spice Model v2.0 Last Revised 24/2/05
    *
    .MODEL FMMTA42 NPN IS =5E-14 NF =1 BF =230 IKF=250E-3
    +VAF=610 ISE=9E-15 NE =1.28 RCO=75 GAMMA=3.1E-7
    +NR =1 BR =5 VAR=45 ISC=5e-12 NC =1.3 
    +RB =7 RE =0.07 RC =0.07 QUASIMOD=1
    +CJC=9.26E-12 MJC=0.241 VJC=0.3905 CJE=68.6E-12 
    +TF =1.1E-9 TR =0.9e-6 XTB=1.4 
    *
    *$
    *


*ZETEX FZT458 Spice Model v3.0 Last Revised 20/09/2007
    *
    .MODEL FZT458 NPN IS=5.32E-14 NF=1 BF=230 IKF=1.5 VAF=1500
    + ISE=2.1E-14 NE=1.385 NR=1.05 BR=8 IKR=0.7 VAR=64 ISC=6.42E-12
    + NC=1.25 RB=0.5 RE=0.224 RC=0.134 QUASIMOD=1 RCO=80 GAMMA=4E-7
    + CJC=9.5E-12 MJC=0.32 VJC=0.4 CJE=115E-12 MJE=0.37 VJE=0.8
    + TF=1.3E-9 TR=16E-6 TRC1=.004 TRB1=.004 TRE1=.004 XTB=1.4
    *
    *$
    *


*ZETEX FZT655 Spice Model v2.0 Last Revised 24/2/05
    *
    .MODEL FZT655  NPN IS=3.2E-13 NF=1.0041 BF=200 IKF=2 VAF=85 RCO=4 
    +GAMMA=5E-9 ISE=1.5E-13 NE =1.26 NR=1.0008 BR=20 VAR=51 ISC=6E-14
    +NC=1.079 RB =0.1 RE =0.045 CJC=65E-12 MJC=0.4896 VJC=0.7676 
    +CJE=350E-12 TF=1.5E-9 TR=3E-7 XTB=1.4 QUASIMOD=1
    *
    *$
    *


*ZETEX FZT657 Spice Model v1.0 Last Revised 25/7/05
    *
    .MODEL FZT657  NPN  IS=2.3E-13 NF=1.003 BF=150 IKF=1.35
    +VAF=295 RCO=20 GAMMA=300E-9 ISE=1.1E-13 NE =1.33 NR=1.001
    +BR=8 VAR=43 ISC=1.8E-13 NC=1.19  RC=0.085 RB =0.35 RE =0.2
    +CJC=45E-12 MJC=0.41 VJC=0.6 CJE=352E-12 TF=0.6E-9 TR=5.5E-7
    +XTB=1.4 QUASIMOD=1 
    *
    *$
    *


*ZETEX  FZT658 Spice Model v2.0 Last Revised 21/1/05
    *
    .MODEL FZT658 NPN IS=1.3E-13 NF=1.0025 BF=150 IKF=0.7 VAF=154
    +ISE=0.7E-13 NE=1.4 NR=1.0012 BR=8 IKR=0.42 VAR=48
    +ISC=3E-13 NC=1.3 RB=0.04 RE=0.0875 RC=0.05 
    +CJC=24.77E-12 MJC=0.322 VJC=0.432 CJE=354E-12 MJE=0.36
    +VJE=0.824 TF=0.62E-9 TR=700E-9 XTB=1.55
    +QUASIMOD=1 RCO=38 GAMMA=20E-8
    *
    *$
    *


*ZETEX FZT694B Spice Model v1.0 Last Revised 1/11/90
    *
    .MODEL FZT694B NPN IS =1.59E-12 NF =1.001 BF =1009 IKF=0.26 VAF=45
    +ISE=.253E-12 NE =1.445 NR =1 BR =40 IKR=1 VAR=30 ISC=0.326E-12
    +NC =1.075 RB =0.2 RE =0.065 RC =0.075 CJC=35.5E-12 MJC=.465
    +VJC=.515 CJE=258E-12 TF =.763E-9 TR =130E-9
    *Note: This Model may be inaccurate for collector currents above 0.6A.
    *
    *$
    *


*ZETEX FZT696B Spice Model v2.0 Last Revised 25/1/05
    *
    .MODEL FZT696B NPN IS =.98476E-12 NF =.999 BF =705 IKF=0.8 VAF=235
    +ISE=8.1E-14 NE =1.36 NR =1.002 BR =20 IKR=.8 VAR=26 ISC=.66E-12
    +NC =1.15 RB =.07 RE =.125 RC =.098 CJC=25.4E-12 MJC=.47 VJC=.445
    +CJE=270E-12 TF =1.301E-9 TR =690E-9 XTB=1.4
    +QUASIMOD=1 RCO=24 GAMMA=75E-8
    *
    *$
    *


*ZETEX FZT855 Spice Model v2.0 Last Revised 24/2/05
    *
    .MODEL FZT855  NPN IS =7.5E-13 BF =240 NF=0.995 VAF=350 ISE=4E-13
    +NE=1.42 GAMMA=8E-8 RCO=2 XTB=1.4 BR=27 NR=1.0015 VAR=140 ISC=8E-12
    +NC=1.3 RB=0.15 RE=0.018 RC=0.018 CJE=4.2E-10 CJC=6.6E-11 VJC=0.48
    +MJC=0.41 TF =1.5E-9 TR=18E-8 QUASIMOD=1
    *
    *$
    *


*ZETEX FZT857 Spice Model v2.0 Last Revised 21/01/2005
    *
    .MODEL FZT857 NPN IS=2E-12 NF=1.006 BF=226 IKF=5 VAF=595 ISE=3.6E-13 
    +NE=1.4088 NR=1.01 BR=40 IKR=94m VAR=33.5 ISC=1.502E-12 NC=1.067
    +RB=.02 RE=.055 RC=.02 CJC=63E-12 MJC=.505 VJC=.491 CJE=1.1E-9
    +TF=1.3E-9 TR=1.75E-6 XTB=1.4 TRB1=.005 TRE1=.005 QUASIMOD=1
    +VO=10 RCO=2.5 GAMMA=6E-8 
    *
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=21JUL2010
*VERSION=1
*
.MODEL MJD340  NPN  IS=2.3E-13 NF=1.003 BF=150 IKF=1.35
+ VAF=295 RCO=20 GAMMA=300E-9 ISE=1.1E-13 NE 1.33 NR=1.001
+ BR=8 VAR=43 ISC=1.8E-13 NC=1.19  RC=0.085 RB 0.35 RE 0.2
+ CJC=45E-12 MJC=0.41 VJC=0.6 CJE=352E-12 TF=0.6E-9 TR=5.5E-7
+ XTB=1.4 QUASIMOD=1 
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=08FEB2011
*VERSION=2
*
.MODEL MMBT5551 NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14
+ NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23
+ CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9
+ TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7
*
*$


*SRC=MMBTA42;DI_MMBTA42;BJTs NPN; Si;  300V  0.500A  219MHz   Diodes Inc. NPN Transistor 
.MODEL DI_MMBTA42  NPN (IS=51.0f NF=1.00 BF=194 VAF=312 
+ IKF=0.182 ISE=34.9p NE=2.00 BR=4.00 NR=1.00 
+ VAR=24.0 IKR=0.450 RE=11.6 RB=46.3 RC=4.63 
+ XTB=1.5 CJE=58.7p VJE=1.10 MJE=0.500 CJC=18.9p VJC=0.300 
+ MJC=0.300 TF=481p TR=115n EG=1.12 )


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=08FEB2011
*VERSION=2
*
.MODEL MMST5551 NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14
+ NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23
+ CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9
+ TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7
*
*$


*SRC=MMSTA42;DI_MMSTA42;BJTs NPN; Si;  300V  0.200A  347MHz   Diodes Inc. BJTs
.MODEL DI_MMSTA42  NPN (IS=109f NF=1.00 BF=219 VAF=312
+ IKF=0.425 ISE=69.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=1.05 RE=1.21 RB=4.86 RC=0.486
+ XTB=1.5 CJE=32.9p VJE=1.10 MJE=0.500 CJC=10.6p VJC=0.300
+ MJC=0.300 TF=441p TR=72.5n EG=1.12 )


*ZETEX SXTA42 Spice Model v2.0 Last Revised 24/2/05
    *
    .MODEL SXTA42 NPN IS =5E-14 NF =1 BF =230 IKF=250E-3
    +VAF=610 ISE=9E-15 NE =1.28 RCO=75 GAMMA=3.1E-7
    +NR =1 BR =5 VAR=45 ISC=5e-12 NC =1.3 
    +RB =7 RE =0.07 RC =0.07 QUASIMOD=1
    +CJC=9.26E-12 MJC=0.241 VJC=0.3905 CJE=68.6E-12 
    +TF =1.1E-9 TR =0.9e-6 XTB=1.4 
    *
    *$
    *


*
.MODEL ZTX455 NPN IS =5.6E-14 BF =260 VAF=660 NF =.992 IKF=.155 ISE=3.1E-14
+NE =1.2502 BR =24 VAR=6 NR =.999 IKR=.114 ISC=1.406E-13 NC =1.13 RB =1.1
+RE =.161 RC =.0339 CJC=11.6E-12 TF =.75E-9 CJE=53.5E-12 TR =100E-9 VJC=.505
+MJC=.455
*
*


*ZETEX ZTX457 Spice Model v2.0 Last Revised 24/2/05
    *
    .MODEL ZTX457 NPN IS =5E-14 NF =1
    +BF =250 IKF=500E-3 VAF=1020 ISE=2.5E-14 NE =1.38
    +RCO=60 GAMMA=10E-7 NR =1 BR =5 IKR=0 VAR=55 ISC=5e-12
    +NC =1.31 RB =3 RE =0.05 RC =0.05 QUASIMOD=1
    +CJC=10.95E-12 MJC=0.265 VJC=0.3905 CJE=125.2E-12 
    +TF =0.6E-9 TR =0.66e-6 XTB=1.4 
    *
    *$
    *


*ZETEX ZTX458 Spice Model v3.0 Last Revised 20/09/2007
    *
    .MODEL ZTX458 NPN IS=5.32E-14 NF=1 BF=230 IKF=1.5 VAF=1500
    + ISE=2.1E-14 NE=1.385 NR=1.05 BR=8 IKR=0.7 VAR=64 ISC=6.42E-12
    + NC=1.25 RB=0.5 RE=0.224 RC=0.134 QUASIMOD=1 RCO=80 GAMMA=4E-7
    + CJC=9.5E-12 MJC=0.32 VJC=0.4 CJE=115E-12 MJE=0.37 VJE=0.8
    + TF=1.3E-9 TR=16E-6 TRC1=.004 TRB1=.004 TRE1=.004 XTB=1.4
    *
    *$
    *


*ZETEX ZTX657 Spice Model v1.0 Last Revised 27/7/05
    *
    .MODEL ZTX657  NPN  IS=2.3E-13 NF=1.003 BF=150 IKF=1.35
    +VAF=295 RCO=20 GAMMA=300E-9 ISE=1.1E-13 NE =1.33 NR=1.001
    +BR=8 VAR=43 ISC=1.8E-13 NC=1.19  RC=0.085 RB =0.35 RE =0.2
    +CJC=45E-12 MJC=0.41 VJC=0.6 CJE=352E-12 TF=0.6E-9 TR=5.5E-7
    +XTB=1.4 QUASIMOD=1 
    *
    *$
    *


*ZETEX  ZTX658 Spice Model v2.0 Last Revised 21/1/05
    *
    .MODEL ZTX658 NPN IS=1.3E-13 NF=1.0025 BF=150 IKF=0.7 VAF=154
    +ISE=0.7E-13 NE=1.4 NR=1.0012 BR=8 IKR=0.42 VAR=48
    +ISC=3E-13 NC=1.3 RB=0.04 RE=0.0875 RC=0.05 
    +CJC=24.77E-12 MJC=0.322 VJC=0.432 CJE=354E-12 MJE=0.36
    +VJE=0.824 TF=0.62E-9 TR=700E-9 XTB=1.55
    +QUASIMOD=1 RCO=38 GAMMA=20E-8
    *
    *$
    *


*ZETEX ZTX694B Spice Model v1.0 Last Revised  1/11/90
    *
    .MODEL ZTX694B NPN IS =1.59E-12 NF =1.001 BF =1009 IKF=0.26 VAF=45
    +ISE=.253E-12 NE =1.445 NR =1 BR =40 IKR=1 VAR=30 ISC=0.326E-12
    +NC =1.075 RB =0.2 RE =0.065 RC =0.075 CJC=35.5E-12 MJC=.465
    +VJC=.515 CJE=258E-12 TF =.763E-9 TR =130E-9
    *Note: This Model may be inaccurate for collector currents above 0.6A.
    *
    *$
    *


*ZETEX ZTX696B Spice Model v2.0 Last Revised 25/1/05
    *
    .MODEL ZTX696B NPN IS =.98476E-12 NF =.999 BF =705 IKF=0.8 VAF=235
    +ISE=8.1E-14 NE =1.36 NR =1.002 BR =20 IKR=.8 VAR=26 ISC=.66E-12
    +NC =1.15 RB =.07 RE =.125 RC =.098 CJC=25.4E-12 MJC=.47 VJC=.445
    +CJE=270E-12 TF =1.301E-9 TR =690E-9 XTB=1.4
    +QUASIMOD=1 RCO=24 GAMMA=75E-8
    *
    *$
    *


*ZETEX ZTX855 Spice Model v2.0 Last Revised 24/2/05
    *
    .MODEL ZTX855  NPN IS =7.5E-13 BF =240 NF=0.995 VAF=350 ISE=4E-13
    +NE=1.42 GAMMA=8E-8 RCO=2 XTB=1.4 BR=27 NR=1.0015 VAR=140 ISC=8E-12
    +NC=1.3 RB=0.15 RE=0.018 RC=0.018 CJE=4.2E-10 CJC=6.6E-11 VJC=0.48
    +MJC=0.41 TF =1.5E-9 TR=18E-8 QUASIMOD=1
    *
    *$
    *


*ZETEX ZTX857 Spice Model v2.0 Last Revised 21/01/2005
    *
    .MODEL ZTX857 NPN IS=2E-12 NF=1.006 BF=226 IKF=5 VAF=595 ISE=3.6E-13 
    +NE=1.4088 NR=1.01 BR=40 IKR=94m VAR=33.5 ISC=1.502E-12 NC=1.067
    +RB=.02 RE=.055 RC=.02 CJC=63E-12 MJC=.505 VJC=.491 CJE=1.1E-9
    +TF=1.3E-9 TR=1.75E-6 XTB=1.4 TRB1=.005 TRE1=.005 QUASIMOD=1
    +VO=10 RCO=2.5 GAMMA=6E-8 
    *
    *$
    *


*ZETEX ZXTN08400BFF Spice Model v1.0 Last Revised 12/10/07
    *
    .MODEL ZXTN08400BFF NPN IS=3.3E-13 NF=1 BF=215 IKF=2 VAF=1500 ISE=1.3E-13
    + NE=1.43 NR=1 BR=11.3 IKR=0.2 VAR=70 ISC=1E-12 NC=1.15 RB=0.2 RE=0.075
    + RC=0.036 CJC=31E-12 MJC=0.33 VJC=0.38 CJE=360E-12 MJE=0.34 VJE=0.7
    + TF=19E-10 TR=170E-8 XTB=1.4 TRC1=.005 TRB1=.005 TRE1=.005 QUASIMOD=1
    + RCO=36 GAMMA=15E-7
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=27JUL2010
*VERSION=2
*
.MODEL ZXTN5551FL NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14
+ NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23
+ CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9
+ TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7
*
*$


*
*Diodes DMMT5451 Spice Model v1.0 Last Revised 17/02/09
*
*.MODEL 5401 PNP IS=6E-14 NF=1 BF=130 VAF=360 ISE=6E-14
+ NE=1.5 NR=1 BR=6.5 VAR=37 ISC=8E-12 NC=1.35 RC=0.08 RB=1 RE=0.25
+ CJC=13E-12 MJC=0.46  VJC=0.7 CJE=63E-12 MJE=0.41 VJE=0.9 
+ TF=6.7E-10 TR=1.03E-6 XTB=1.5 QUASIMOD=1 RCO=14 GAMMA=1.5E-8
*
*$

.MODEL 5551 NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14
+ NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23
+ CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9
+ TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7
*
*$
*
*                (c)  2009 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=10FEB2011
*VERSION=1
*PIN_ORDER         
* 1=E1    6=C1
* 2=B1    5=B2
* 3=C2    4=E2
*
.SUBCKT MMDT5401 1 2 3 4 5 6
Q1 6 2 1 Mod1
Q2 3 5 4 Mod1
*
.MODEL Mod1 PNP IS=6E-14 NF=1 BF=130 VAF=360 ISE=6E-14
+ NE=1.5 NR=1 BR=6.5 VAR=37 ISC=8E-12 NC=1.35 RC=0.08 RB=1 RE=0.25
+ CJC=13E-12 MJC=0.46  VJC=0.7 CJE=63E-12 MJE=0.41 VJE=0.9 
+ TF=6.7E-10 TR=1.03E-6 XTB=1.5 QUASIMOD=1 RCO=14 GAMMA=1.5E-8
.ENDS
*
*$


.SUBCKT ZDT795A 1 2 3 4 5 6 7 8
*            E2 B2 E1 B1 C1 C1 C2 C2
Q1 9 4 3 Mod1
Q2 10 2 1 Mod1
R1 5 9 0.001
R2 6 9 0.001
R3 7 10 0.001
R4 8 10 0.001
*
.MODEL Mod1 PNP IS=7E-13 NF=1.005 BF=500 IKF=2 VAF=62 ISE=1E-14
+ NE=1.4 NR=1 BR=10.1 VAR=25 ISC=4.1E-13 IKR=2 NC=1.07 RB=0.45
+ RE=0.06 RC=0.14 CJC=52E-12 MJC=0.515 VJC=0.65 CJE=280E-12
+ TF=0.72E-9 TR=58E-8 XTB=1.4 TRB1=.005 TRE1=.005 QUASIMOD=1
+ RCO=4.3 GAMMA=0.5E-7
*
.ENDS ZDT795A


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=10FEB2011
*VERSION=1
*PIN_ORDER         
* 1=E1    6=C1
* 2=B1    5=B2
* 3=C2    4=E2
*
.SUBCKT MMDT5551 1 2 3 4 5 6
Q1 6 2 1 Mod1
Q2 3 5 4 Mod1
*
.MODEL Mod1 NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14
+ NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23
+ CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9
+ TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7
.ENDS
*
*$


*
.SUBCKT ZDT694 1 2 3 4 5 6 7 8
*            E2 B2 E1 B1 C1 C1 C2 C2
Q1 9 4 3 Mod1
Q2 10 2 1 Mod1
R1 5 9 0.001
R2 6 9 0.001
R3 7 10 0.001
R4 8 10 0.001
*
.MODEL Mod1 NPN IS=1.59E-12 NF=1.001 BF=1009 IKF=0.26 VAF=45
+ ISE=.253E-12 NE=1.445 NR=1 BR=40 IKR=1 VAR=30 ISC=0.326E-12
+ NC=1.075 RB=0.2 RE=0.065 RC=0.075 CJC=35.5E-12 MJC=.465
+ VJC=.515 CJE=258E-12 TF=.763E-9 TR=130E-9
*
.ENDS ZDT694


*SRC=IMX8;DI_IMX8;BJTs NPN; Si;  120V  50.0mA  300MHz   Diodes Inc.
Transistor
.MODEL DI_IMX8  NPN (IS=14.6f NF=1.00 BF=581 VAF=197
+ IKF=30.4m ISE=2.54p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=75.0m RE=0.830 RB=3.32 RC=0.332
+ XTB=1.5 CJE=12.5p VJE=1.10 MJE=0.500 CJC=4.02p VJC=0.300
+ MJC=0.300 TF=475p TR=80.1n EG=1.12 )


*SRC=DP350T05;DI_DP350T05;BJTs PNP; Si;  350V  0.500A  50.0MHz   Diodes Inc. PNP BJT
.MODEL DI_DP350T05  PNP (IS=177f NF=1.00 BF=185 VAF=337
+ IKF=0.182 ISE=68.4p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.450 RE=1.26 RB=5.05 RC=0.505
+ XTB=1.5 CJE=73.2p VJE=1.10 MJE=0.500 CJC=11.8p VJC=0.300
+ MJC=0.300 TF=3.04n TR=116n EG=1.12 )


*
*Diodes DXT5401 Spice Model v1.0 Last Revised 16/02/09
*
.MODEL DXT5401 PNP IS=6E-14 NF=1 BF=130 VAF=360 ISE=6E-14
+ NE=1.5 NR=1 BR=6.5 VAR=37 ISC=8E-12 NC=1.35 RC=0.08 RB=1 RE=0.25
+ CJC=13E-12 MJC=0.46  VJC=0.7 CJE=63E-12 MJE=0.41 VJE=0.9 
+ TF=6.7E-10 TR=1.03E-6 XTB=1.5 QUASIMOD=1 RCO=14 GAMMA=1.5E-8
*
*$
*


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=18/09/2014
*VERSION=1
*
.MODEL DXTA92 PNP IS =4E-14 NF =1.01 BF =105
+IKF=800E-3 VAF=300 ISE=8E-15 NE =1.38 RCO=59 
+GAMMA=0.85E-7 NR =1 BR =4 IKR=55e-3 VAR=40
+ISC=8e-12 NC =1.3 RB =9 RE =0.1 RC =0.1 QUASIMOD=1
+CJC=16.9E-12 MJC=0.382 VJC=0.536 CJE=80.9E-12 
+TF =0.7E-9 TR =1.6e-6 XTB=1.4
*
*$
*
*                     (c)  2014 Diodes Inc
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=08FEB2011
*VERSION=2
*
.MODEL DZT5401 PNP IS=6E-14 NF=1 BF=130 VAF=360 ISE=6E-14
+ NE=1.5 NR=1 BR=6.5 VAR=37 ISC=8E-12 NC=1.35 RC=0.08 RB=1 RE=0.25
+ CJC=13E-12 MJC=0.46  VJC=0.7 CJE=63E-12 MJE=0.41 VJE=0.9 
+ TF=6.7E-10 TR=1.03E-6 XTB=1.5 QUASIMOD=1 RCO=14 GAMMA=1.5E-8
*
*$


*
.MODEL FCX555 PNP IS=1.3E-13 NF=1 BF=220 IKF=1.2
+ VAF=110 ISE=3E-14 NE=1.5 RCO=12 GAMMA=3E-8
+ NR=1 BR=8 VAR=15.5 ISC=1e-13 NC=1.06
+ RB=5 RE=0.2 RC=0.2 QUASIMOD=1 XTB=1.4
+ CJC=28E-12 MJC=0.45 VJC=0.736 CJE=112E-12
+ TF=0.7E-9 TR=2e-7 
*
*$


*ZETEX FCX558 Spice Model v3.0 Last Revised 20/09/2007
    *
    .MODEL FCX558 PNP IS=7.84E-14 NF=1 BF=210 IKF=1.8 VAF=349 ISE=3.35E-14
    + NE=1.69 NR=1 BR=3.4 IKR=0.15 VAR=82 ISC=9.42E-12 NC=1.05 RB=0.5 RE=0.1
    + RC=0.1 QUASIMOD=1 RCO=54 GAMMA=13e-6 CJC=20.5E-12 MJC=0.38 VJC=0.44
    + CJE=115E-12 MJE=0.43 VJE=0.85 TF=0.9E-9 TR=18E-5 TRC1=.015 TRB1=.015
    + TRE1=.015 XTB=1.4
    *
    *$
    *


*ZETEX FCX596 Spice Model v2.0 Last Revised 24/2/05
    *
    .MODEL FCX596 PNP IS=1.3E-13 NF=1 BF=220 IKF=1.2
    +VAF=110 ISE=3E-14 NE=1.5 RCO=12 GAMMA=3E-8
    +NR=1 BR=8 VAR=15.5 ISC=1e-13 NC=1.06
    +RB=5 RE=0.2 RC=0.2 QUASIMOD=1 XTB=1.4
    +CJC=28E-12 MJC=0.45 VJC=0.736 CJE=112E-12
    +TF=0.7E-9 TR=2e-7 
    *
    *$
    *


*ZETEX FMMT555 Spice Model v2.0 Last Revised 24/2/05
    *
    .MODEL FMMT555 PNP IS=1.3E-13 NF=1 BF=220 IKF=1.2
    +VAF=110 ISE=3E-14 NE=1.5 RCO=12 GAMMA=3E-8
    +NR=1 BR=8 VAR=15.5 ISC=1e-13 NC=1.06
    +RB=5 RE=0.2 RC=0.2 QUASIMOD=1 XTB=1.4
    +CJC=28E-12 MJC=0.45 VJC=0.736 CJE=112E-12
    +TF=0.7E-9 TR=2e-7 
    *
    *$
    *


*ZETEX FMMT558 Spice Model v3.0 Last Revised 20/09/2007
    *
    .MODEL FMMT558 PNP IS=7.84E-14 NF=1 BF=210 IKF=1.8 VAF=349 ISE=3.35E-14
    + NE=1.69 NR=1 BR=3.4 IKR=0.15 VAR=82 ISC=9.42E-12 NC=1.05 RB=0.5 RE=0.1
    + RC=0.1 QUASIMOD=1 RCO=54 GAMMA=13e-6 CJC=20.5E-12 MJC=0.38 VJC=0.44
    + CJE=115E-12 MJE=0.43 VJE=0.85 TF=0.9E-9 TR=18E-5 TRC1=.015 TRB1=.015
    + TRE1=.015 XTB=1.4
    *$
    *


*ZETEX FMMT560 Spice Model v2.0 Last Revised 24/2/05
    *
    .MODEL FMMT560 PNP IS=4E-14 NF=0.98 BF=140 VAF=104 ISE=1E-12 NE=1.54
    +RCO=100 GAMMA=1.5E-7 NR=1 BR=2 VAR=100 ISC=1e-13 NC=2 IKR=10E-3
    +RB=25 RE=.3 RC=.3 CJC=29E-12 MJC=0.364 VJC=0.511 CJE=100.3E-12
    +MJE=0.419 VJE=0.877 TF=2E-10 TR=1.5e-6 XTB=1.5 QUASIMOD=1
    *
    *$
    *


*ZETEX FMMT596 Spice Model v2.0 Last Revised 24/2/05
    *
    .MODEL FMMT596 PNP IS=1.3E-13 NF=1 BF=220 IKF=1.2
    +VAF=110 ISE=3E-14 NE=1.5 RCO=12 GAMMA=3E-8
    +NR=1 BR=8 VAR=15.5 ISC=1e-13 NC=1.06
    +RB=5 RE=0.2 RC=0.2 QUASIMOD=1 XTB=1.4
    +CJC=28E-12 MJC=0.45 VJC=0.736 CJE=112E-12
    +TF=0.7E-9 TR=2e-7 
    *
    *$
    *


*ZETEX FMMT597 Spice Model v1.0 Last Revised 20/09/07
    *
    .MODEL FMMT597 PNP IS=7E-14 NF=1 BF=155 IKF=1.4 VAF=320 ISE=6E-14
    + NE=1.8 NR=1 BR=3 IKR=0.3 VAR=56 ISC=5e-13 NC=1.12 RB=0.5 RE=0.1
    + RC=0.1 QUASIMOD=1  RCO=41 GAMMA=13E-8 CJC=20.7E-12 MJC=0.38 VJC=0.44
    + CJE=126E-12 MJE=0.41 VJE=0.8 TF=1.1E-9 TR=30e-7 TRC1=.003 TRB1=.003
    + TRE1=.003 XTB=1.4
    *
    *$
    *


*ZETEX FMMT6520 Spice Model v2.0 Last Revised 24/2/05
    *
    .MODEL FMMT6520 PNP IS =4E-14 NF =1.01 BF =105
    +IKF=800E-3 VAF=300 ISE=8E-15 NE =1.38 RCO=59 
    +GAMMA=0.85E-7 NR =1 BR =4 IKR=55e-3 VAR=40
    +ISC=8e-12 NC =1.3 RB =9 RE =0.1 RC =0.1 QUASIMOD=1
    +CJC=16.9E-12 MJC=0.382 VJC=0.536 CJE=80.9E-12 
    +TF =0.7E-9 TR =1.6e-6 XTB=1.4
    *
    *$
    *


*ZETEX FMMTA92 Spice Model v2.0 Last Revised 24/2/05
    *
    .MODEL FMMTA92 PNP IS =4E-14 NF =1.01 BF =105
    +IKF=800E-3 VAF=300 ISE=8E-15 NE =1.38 RCO=59 
    +GAMMA=0.85E-7 NR =1 BR =4 IKR=55e-3 VAR=40
    +ISC=8e-12 NC =1.3 RB =9 RE =0.1 RC =0.1 QUASIMOD=1
    +CJC=16.9E-12 MJC=0.382 VJC=0.536 CJE=80.9E-12 
    +TF =0.7E-9 TR =1.6e-6 XTB=1.4
    *
    *$
    *


*ZETEX FZT558 Spice Model v3.0 Last Revised 20/09/2007
    *
    .MODEL FZT558 PNP IS=7.84E-14 NF=1 BF=210 IKF=1.8 VAF=349 ISE=3.35E-14
    + NE=1.69 NR=1 BR=3.4 IKR=0.15 VAR=82 ISC=9.42E-12 NC=1.05 RB=0.5 RE=0.1
    + RC=0.1 QUASIMOD=1 RCO=54 GAMMA=13e-6 CJC=20.5E-12 MJC=0.38 VJC=0.44
    + CJE=115E-12 MJE=0.43 VJE=0.85 TF=0.9E-9 TR=18E-5 TRC1=.015 TRB1=.015
    + TRE1=.015 XTB=1.4
    *
    *$
    *


*ZETEX FZT755 Spice Model v2.0 Last Revised 24/2/05
    *
    .MODEL FZT755 PNP IS =3.2E-13 NF =1.0041 BF =150 IKF=1.6 VAF=85
    +RCO=5 GAMMA=5E-9 ISE=8E-14 NE =1.57 NR =1.0008 BR =20 IKR=0.45 VAR=51
    +ISC=6E-14 NC =1.079 RB =0.087 RE =0.08 RC =0.07 CJC=65E-12 MJC=0.4896
    +VJC=0.7676 CJE=350E-12 TF =1.5E-9 TR =3E-7 XTB=1.4 QUASIMOD=1
    *$
    *


*ZETEX FZT757 Spice Model v3.0 Last Revised 24/2/05
    *
    .MODEL FZT757 PNP IS =1.305E-13 NF =1.0004 BF =120 IKF=.5 VAF=1060
    +ISE=7.5E-13 NE =1.5 RCO=15 GAMMA=5E-8 NR =1 ISC=2E-13 NC =1.8
    +VAR=50 BR =3.2 IKR=.5 RB =.1 RE =.19 RC =.2 CJC=48E-12 MJC=.56
    +VJC=.775 CJE=445E-12 TF=3.03E-9 TR=1500E-9 NK=0.75 XTB=1.6
    +TRE1=.0025 TRB1=.0025 TRC1=.0025 QUASIMOD=1
    *
    *$
    *


*ZETEX FZT758 Spice Model v2.0 Last Revised 14/6/04
    *
    .MODEL FZT758 PNP  IS =1.305E-13 NF =1.0004 BF =150 VAF=350
    +ISE=7.5E-13 NE =1.5 RCO=20 GAMMA=2.5E-8 QUASIMOD=1 NR =1
    +ISC=2E-13 NC =1.8 VAR=30  BR =2.5 RB =.1 RE =.01 RC =.01
    +CJC=58E-12 MJC=.56 VJC=.775 CJE=404E-12  TF =1E-9 TR =1200E-9
    +XTB=1.7 
    *
    *$
    *


*ZETEX FZT795A Spice Model v1.0 Last revision 16/09/05
    *
    .MODEL FZT795A PNP IS=7E-13 NF=1.005 BF=500 IKF=2 VAF=62 ISE=1E-14
    +NE=1.4 NR=1 BR=10.1 VAR=25 ISC=4.1E-13 IKR=2 NC=1.07 RB=0.45
    +RE=0.06 RC=0.14 CJC=52E-12 MJC=0.515 VJC=0.65 CJE=280E-12
    +TF=0.72E-9 TR=58E-8 XTB=1.4 TRB1=.005 TRE1=.005 QUASIMOD=1
    +RCO=4.3 GAMMA=0.5E-7
    *
    *$
    *


*ZETEX FZT796A Spice Model v2.0 Last Revised 24/1/05
    *
    .MODEL FZT796A PNP IS=7E-13 NF=1.005 BF=450 IKF=2 VAF=450 ISE=1E-14
    +NE=1.4 NR=1 BR=6.5 VAR=48 ISC=4.1E-13 IKR=0.4 NC=1.07 RB=0.05
    +RE=0.06 RC=0.14 CJC=52E-12 MJC=0.515 VJC=0.65 CJE=280E-12 TF=0.83E-9
    +TR=130E-8 XTB=1.4 TRB1=.005 TRE1=.005 QUASIMOD=1 RCO=13 GAMMA=2E-7 
    *
    *$
    *


*ZETEX FZT955 Spice Model v2.0 Last Revised 24/2/05
    *
    .MODEL FZT955  PNP IS =6E-13 BF =150 NF=1 VAF=40 ISE=4E-13
    +NE=1.42 GAMMA=1E-8 RCO=1 XTB=1.4 BR=21 NR=1.0015 VAR=19 ISC=8E-12
    +NC=1.3 RB=0.15 RE=0.023 RC=0.018 CJE=1190E-12 VJE=0.92 MJE=0.44 
    +CJC=216E-12 VJC=0.87 MJC=0.54 TF =9E-10 TR=11E-8 QUASIMOD=1
    *
    *$
    *


*ZETEX FZT956 Spice Model v3.0 Last Revised 24/2/05
    *
    .MODEL FZT956  PNP IS =3E-12 BF =215 NF=1 VAF=86 IKF=2 ISE=6.5E-13
    +NE=1.58 GAMMA=1E-8 RCO=1.4 XTB=1.4 BR=18 NR=1 VAR=59 ISC=6E-12
    +NC=1.6 RB=0.05 RE=0.02 RC=0.01 CJC=191E-12 MJC=0.5535 VJC=0.8577
    +CJE=1.08E-9 TF=0.895E-9 TR=118E-9 QUASIMOD=1
    *
    *$
    *


*ZETEX FZT957 Spice Model v2.0 Last Revised 21/01/2005
    *
    .MODEL FZT957  PNP IS=1.3152E-12 NF=1.0106 BF=215 IKF=4 VAF=325
    +ISE=5.5E-13 NE=1.524 NR=1.0104 BR=8 IKR=0.63 VAR=110 ISC=6E-12
    +NC=1.8 RB=0.25 RE=0.07 RC=0.07 CJC=140E-12 MJC=0.5432 VJC=0.7592
    +CJE=1.1E-9 TF=1.23E-9 TR=560E-9 XTB=1.4 TRB1=.005 TRE1=.005
    +QUASIMOD=1 VO=10 RCO=6.5 GAMMA=0.8E-7
    *
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=21JUL2010
*VERSION=1
*
.MODEL MJD350 PNP IS=1.305E-13 NF=1.0004 BF=120 IKF=.5 VAF=1060
+ ISE=7.5E-13 NE=1.5 RCO=15 GAMMA=5E-8 NR=1 ISC=2E-13 NC=1.8
+ VAR=50 BR=3.2 IKR=.5 RB=.1 RE=.19 RC=.2 CJC=48E-12 MJC=.56
+ VJC=.775 CJE=445E-12 TF=3.03E-9 TR=1500E-9 NK=0.75 XTB=1.6
+ TRE1=.0025 TRB1=.0025 TRC1=.0025 QUASIMOD=1
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=08FEB2011
*VERSION=2
*
.MODEL MMBT5401 PNP IS=6E-14 NF=1 BF=130 VAF=360 ISE=6E-14
+ NE=1.5 NR=1 BR=6.5 VAR=37 ISC=8E-12 NC=1.35 RC=0.08 RB=1 RE=0.25
+ CJC=13E-12 MJC=0.46  VJC=0.7 CJE=63E-12 MJE=0.41 VJE=0.9 
+ TF=6.7E-10 TR=1.03E-6 XTB=1.5 QUASIMOD=1 RCO=14 GAMMA=1.5E-8
*
*$


*SRC=MMBTA92;DI_MMBTA92;BJTs PNP; Si;  300V  0.500A  60.0MHz   Diodes Inc.
Transistor
.MODEL DI_MMBTA92  PNP (IS=177f NF=1.00 BF=239 VAF=312
+ IKF=72.9m ISE=33.4p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.180 RE=1.16 RB=4.63 RC=0.463
+ XTB=1.5 CJE=125p VJE=1.10 MJE=0.500 CJC=40.2p VJC=0.300 MJC=0.300 
+ TF=2.18n TR=415n EG=1.12 )


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=08FEB2011
*VERSION=2
*
.MODEL MMST5401 PNP IS=6E-14 NF=1 BF=130 VAF=360 ISE=6E-14
+ NE=1.5 NR=1 BR=6.5 VAR=37 ISC=8E-12 NC=1.35 RC=0.08 RB=1 RE=0.25
+ CJC=13E-12 MJC=0.46  VJC=0.7 CJE=63E-12 MJE=0.41 VJE=0.9 
+ TF=6.7E-10 TR=1.03E-6 XTB=1.5 QUASIMOD=1 RCO=14 GAMMA=1.5E-8
*
*$


*SRC=MMSTA92;DI_MMSTA92;BJTs PNP; Si;  300V  0.100A  60.0MHz   Diodes Inc.  BJTs
.MODEL DI_MMSTA92  PNP (IS=53.7f NF=1.00 BF=164 VAF=312
+ IKF=66.8m ISE=25.7p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.165 RE=0.565 RB=2.26 RC=0.226
+ XTB=1.5 CJE=52.0p VJE=1.10 MJE=0.500 CJC=16.8p VJC=0.300
+ MJC=0.300 TF=2.46n TR=426n EG=1.12 )


*ZETEX ZTX558 Spice Model v3.0 Last Revised 20/09/2007
    *
    .MODEL ZTX558 PNP IS=7.84E-14 NF=1 BF=210 IKF=1.8 VAF=349 ISE=3.35E-14
    + NE=1.69 NR=1 BR=3.4 IKR=0.15 VAR=82 ISC=9.42E-12 NC=1.05 RB=0.5 RE=0.1
    + RC=0.1 QUASIMOD=1 RCO=54 GAMMA=13e-6 CJC=20.5E-12 MJC=0.38 VJC=0.44
    + CJE=115E-12 MJE=0.43 VJE=0.85 TF=0.9E-9 TR=18E-5 TRC1=.015 TRB1=.015
    + TRE1=.015 XTB=1.4
    *
    *$
    *


*ZETEX ZTX560 Spice Model v2.0 Last Revised 24/2/05
    *
    .MODEL ZTX560 PNP IS=4E-14 NF=0.98 BF=140 VAF=104 ISE=1E-12 NE=1.54
    +RCO=100 GAMMA=1.5E-7 NR=1 BR=2 VAR=100 ISC=1e-13 NC=2 IKR=10E-3
    +RB=25 RE=.3 RC=.3 CJC=29E-12 MJC=0.364 VJC=0.511 CJE=100.3E-12
    +MJE=0.419 VJE=0.877 TF=2E-10 TR=1.5e-6 XTB=1.5 QUASIMOD=1
    *
    *$
    *


*ZETEX ZTX757 Spice Model v3.0 Last Revised 24/2/05
    *
    .MODEL ZTX757 PNP IS =1.305E-13 NF =1.0004 BF =120 IKF=.5 VAF=1060
    +ISE=7.5E-13 NE =1.5 RCO=15 GAMMA=5E-8 NR =1 ISC=2E-13 NC =1.8
    +VAR=50 BR =3.2 IKR=.5 RB =.1 RE =.19 RC =.2 CJC=48E-12 MJC=.56
    +VJC=.775 CJE=445E-12 TF=3.03E-9 TR=1500E-9 NK=0.75 XTB=1.6
    +TRE1=.0025 TRB1=.0025 TRC1=.0025 QUASIMOD=1
    *
    *$
    *


*ZETEX ZTX758 Spice Model v2.0 Last Revised 14/6/04
    *
    .MODEL ZTX758 PNP  IS =1.305E-13 NF =1.0004 BF =150 VAF=350
    +ISE=7.5E-13 NE =1.5 RCO=20 GAMMA=2.5E-8 QUASIMOD=1 NR =1
    +ISC=2E-13 NC =1.8 VAR=30  BR =2.5 RB =.1 RE =.01 RC =.01
    +CJC=58E-12 MJC=.56 VJC=.775 CJE=404E-12  TF =1E-9 TR =1200E-9
    +XTB=1.7 
    *
    *$
    *


*ZETEX ZTX795A Spice Model v1.0 Last revision 16/09/05
    *
    .MODEL ZTX795A PNP IS=7E-13 NF=1.005 BF=500 IKF=2 VAF=62 ISE=1E-14
    +NE=1.4 NR=1 BR=10.1 VAR=25 ISC=4.1E-13 IKR=2 NC=1.07 RB=0.45
    +RE=0.06 RC=0.14 CJC=52E-12 MJC=0.515 VJC=0.65 CJE=280E-12
    +TF=0.72E-9 TR=58E-8 XTB=1.4 TRB1=.005 TRE1=.005 QUASIMOD=1
    +RCO=4.3 GAMMA=0.5E-7
    *
    *$
    *


*ZETEX ZTX796A Spice Model v2.0 Last Revised 4/3/05
    *
    .MODEL ZTX796A PNP IS=7E-13 NF=1.005 BF=450 IKF=2 VAF=450 ISE=1E-14
    +NE=1.4 NR=1 BR=6.5 VAR=48 ISC=4.1E-13 IKR=0.4 NC=1.07 RB=0.05
    +RE=0.06 RC=0.14 CJC=52E-12 MJC=0.515 VJC=0.65 CJE=280E-12 TF=0.83E-9
    +TR=130E-8 XTB=1.4 TRB1=.005 TRE1=.005 QUASIMOD=1 RCO=13 GAMMA=2E-7 
    *
    *$
    *


*ZETEX ZTX955 Spice Model v3.0 Last Revised 24/2/05
    *
    .MODEL ZTX955  PNP IS =6E-13 BF =150 NF=1 VAF=40 ISE=4E-13
    +NE=1.42 GAMMA=1E-8 RCO=1 XTB=1.4 BR=21 NR=1.0015 VAR=19 ISC=8E-12
    +NC=1.3 RB=0.15 RE=0.023 RC=0.018 CJE=1190E-12 VJE=0.92 MJE=0.44 
    +CJC=216E-12 VJC=0.87 MJC=0.54 TF =9E-10 TR=11E-8 QUASIMOD=1
    *
    *$
    *


*ZETEX ZTX956 Spice Model v3.0 Last Revised 24/2/05
    *
    .MODEL ZTX956  PNP IS =3E-12 BF =215 NF=1 VAF=86 IKF=2 ISE=6.5E-13
    +NE=1.58 GAMMA=1E-8 RCO=1.4 XTB=1.4 BR=18 NR=1 VAR=59 ISC=6E-12
    +NC=1.6 RB=0.05 RE=0.02 RC=0.01 CJC=191E-12 MJC=0.5535 VJC=0.8577
    +CJE=1.08E-9 TF=0.895E-9 TR=118E-9 QUASIMOD=1
    *
    *$
    *


*ZETEX ZTX957 Spice Model v2.0 Last Revised 21/01/2005
    *
    .MODEL ZTX957  PNP IS=1.3152E-12 NF=1.0106 BF=215 IKF=4 VAF=325
    +ISE=5.5E-13 NE=1.524 NR=1.0104 BR=8 IKR=0.63 VAR=110 ISC=6E-12
    +NC=1.8 RB=0.25 RE=0.07 RC=0.07 CJC=140E-12 MJC=0.5432 VJC=0.7592
    +CJE=1.1E-9 TF=1.23E-9 TR=560E-9 XTB=1.4 TRB1=.005 TRE1=.005
    +QUASIMOD=1 VO=10 RCO=6.5 GAMMA=0.8E-7
    *
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=23JUL2010
*VERSION=2
*
.MODEL ZTX958  PNP IS=1.601E-12 NF=1.01 BF=175 IKF=2.8 VAF=530 ISE=1.7E-13
+ NE=1.46 NR=1.05 BR=5 IKR=0.8 VAR=28 ISC=5E-11 NC=1.7 RB=0.25 RE=0.038
+ RC=0.035 CJC=113E-12 MJC=0.507 VJC=0.595 CJE=1.05E-9 TF=1.26E-9 TR=1.28E-6
+ XTB=1.4 TRB1=0.005 TRE1=0.005 QUASIMOD=1 VO=10 RCO=7 GAMMA=0.5E-7
*
*$


*DIODES_INC_SPICE_MODEL ZX5T955G
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=28Dec2012
*VERSION=1

.MODEL ZX5T955G PNP IS=370E-14 NF=.99 BF=180 ISE=150E-15 NE=1.35 
+ BR=6 ISC=260E-15 NC=1.1 NR=.99 CJC=121E-12 MJC=0.4 VJC=0.6
+ CJE=687E-12 MJE=0.4 VJE=0.75 RC=40m RE=40m RB=.18 TF=.8n TR=150n XTB=1.65 NK=.78 IKF=5.1 EG=1.4


*                (c)  2012 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*DIODES_INC_SPICE_MODEL ZX5T955Z
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=28Dec2012
*VERSION=1

.MODEL ZX5T955Z PNP IS=370E-14 NF=.99 BF=180 ISE=150E-15 NE=1.35 
+ BR=6 ISC=260E-15 NC=1.1 NR=.99 CJC=121E-12 MJC=0.4 VJC=0.6
+ CJE=687E-12 MJE=0.4 VJE=0.75 RC=40m RE=40m RB=.18 TF=.8n TR=150n XTB=1.65 NK=.78 IKF=5.1 EG=1.4


*                (c)  2012 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*ZETEX ZXTP08400BFF Spice Model v1.1 Last Revised 15/08/07
    *
    .MODEL ZXTP08400BFF PNP IS=3.8E-13 BF=200 NF=1 VAF=250 ISE=2E-13 NE=1.48
    +BR=5 NR=1 VAR=65 ISC=3.8E-13 NC=1.05 RC=0.045 RE=0.068 RB=0.1 
    +CJE=370E-12 VJE=0.8 MJE=0.43 CJC=65E-12 VJC=0.5 MJC=0.43
    +TF=1.2E-9 TR=2400E-9 RCO=14 GAMMA=7E-8 QUASIMOD=1 XTB=1.5
    *
    *$
    *


*DIODES_INC_SPICE_MODEL ZXTP2014G
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=28Dec2012
*VERSION=1

.MODEL ZXTP2014G PNP IS=370E-14 NF=.99 BF=180 ISE=150E-15 NE=1.35 
+ BR=6 ISC=260E-15 NC=1.1 NR=.99 CJC=121E-12 MJC=0.4 VJC=0.6
+ CJE=687E-12 MJE=0.4 VJE=0.75 RC=40m RE=40m RB=.18 TF=.8n TR=150n XTB=1.65 NK=.78 IKF=5.1 EG=1.4


*                (c)  2012 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*DIODES_INC_SPICE_MODEL ZXTP2014Z
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=28Dec2012
*VERSION=1

.MODEL ZXTP2014Z PNP IS=370E-14 NF=.99 BF=180 ISE=150E-15 NE=1.35 
+ BR=6 ISC=260E-15 NC=1.1 NR=.99 CJC=121E-12 MJC=0.4 VJC=0.6
+ CJE=687E-12 MJE=0.4 VJE=0.75 RC=40m RE=40m RB=.18 TF=.8n TR=150n XTB=1.65 NK=.78 IKF=5.1 EG=1.4


*                (c)  2012 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*ZETEX ZXTP23140BFH Spice Model v1.0 Last Revised 04/10/07
    *
    .MODEL ZXTP23140BFH PNP IS=4E-13 NF=1 BF=230 VAF=99 ISE=1.2E-13 IKF=6
    + NE=1.4 BR=16 VAR=5.15 ISC=2E-13 NC=1.09 RC=0.0045 RB=0.15 RE=0.014
    + QUASIMOD=1 RCO=1.4 GAMMA=7E-9 CJC=103E-12 MJC=0.405 VJC=0.55 CJE=630E-12
    + MJE=0.47 VJE=0.95 TF=0.9E-9 TR=5E-8 TRC1=.003 TRB1=.003 TRE1=.003 XTB=1.4
    *
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=27JUL2010
*VERSION=2
*
.MODEL ZXTP5401FL PNP IS=6E-14 NF=1 BF=130 VAF=360 ISE=6E-14
+ NE=1.5 NR=1 BR=6.5 VAR=37 ISC=8E-12 NC=1.35 RC=0.08 RB=1 RE=0.25
+ CJC=13E-12 MJC=0.46  VJC=0.7 CJE=63E-12 MJE=0.41 VJE=0.9 
+ TF=6.7E-10 TR=1.03E-6 XTB=1.5 QUASIMOD=1 RCO=14 GAMMA=1.5E-8
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=27JUL2010
*VERSION=2
*
.MODEL ZXTP5401G PNP IS=6E-14 NF=1 BF=130 VAF=360 ISE=6E-14
+ NE=1.5 NR=1 BR=6.5 VAR=37 ISC=8E-12 NC=1.35 RC=0.08 RB=1 RE=0.25
+ CJC=13E-12 MJC=0.46  VJC=0.7 CJE=63E-12 MJE=0.41 VJE=0.9 
+ TF=6.7E-10 TR=1.03E-6 XTB=1.5 QUASIMOD=1 RCO=14 GAMMA=1.5E-8
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=27JUL2010
*VERSION=2
*
.MODEL ZXTP5401Z PNP IS=6E-14 NF=1 BF=130 VAF=360 ISE=6E-14
+ NE=1.5 NR=1 BR=6.5 VAR=37 ISC=8E-12 NC=1.35 RC=0.08 RB=1 RE=0.25
+ CJC=13E-12 MJC=0.46  VJC=0.7 CJE=63E-12 MJE=0.41 VJE=0.9 
+ TF=6.7E-10 TR=1.03E-6 XTB=1.5 QUASIMOD=1 RCO=14 GAMMA=1.5E-8
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=22FEB2011
*VERSION=1
*
.MODEL ZXTP558L PNP IS=7.84E-14 NF=1 BF=210 IKF=1.8 VAF=349 ISE=3.35E-14
+ NE=1.69 NR=1 BR=3.4 IKR=0.15 VAR=82 ISC=9.42E-12 NC=1.05 RB=0.5 RE=0.1
+ RC=0.1 QUASIMOD=1 RCO=54 GAMMA=13e-6 CJC=20.5E-12 MJC=0.38 VJC=0.44
+ CJE=115E-12 MJE=0.43 VJE=0.85 TF=0.9E-9 TR=18E-5 TRC1=.015 TRB1=.015
+ TRE1=.015 XTB=1.4
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_IM
*SIMULATOR=PSPICE
*DATE=06Sep2013
*VERSION=1
*

*
.MODEL DXTP560BP5 PNP IS=4E-14 NF=0.98 BF=140 VAF=104 ISE=1E-12 NE=1.54
+RCO=100 GAMMA=1.5E-7 NR=1 BR=2 VAR=100 ISC=1e-13 NC=2 IKR=10E-3
+RB=25 RE=.3 RC=.3 CJC=29E-12 MJC=0.364 VJC=0.511 CJE=100.3E-12
+MJE=0.419 VJE=0.877 TF=2E-10 TR=1.5e-6 XTB=1.5 QUASIMOD=1
*



*                (c)  2013 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=CADENCE PSPICE 15.7
*DATE=01DEC2010
*VERSION=1
*
.MODEL ZXTN10150D NPN IS=7.5E-13 NF=1.008 BF=440 IKF=3
+ VAF=220 ISE=1E-13 NE=1.4 NR=1.008 BR=36 IKR=0.5
+ VAR=39.6 ISC=1E-12 NC=1.2 RB=0.8 RE=0.026 RC=0.046
+ CJC=26E-12 MJC=0.4 VJC=0.4 CJE=220E-12 MJE=0.35 VJE=0.73
+ TF=0.5E-9 TR=380E-9 RCO=9 GAMMA=2E-7 QUASIMOD=1
+ TRE1=0.0045 TRB1=0.0035 TRC1=0.0045 XTB=1.5 XTI=4
*

*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_IM
*SIMULATOR=PSPICE
*DATE=27-Jan-2014
*VERSION=1
*

.MODEL ZXTN4004Z NPN IS=7.5E-13 NF=1.008 BF=440 IKF=3
+ VAF=220 ISE=1E-13 NE=1.4 NR=1.008 BR=36 IKR=0.5
+ VAR=39.6 ISC=1E-12 NC=1.2 RB=0.8 RE=0.026 RC=0.046
+ CJC=26E-12 MJC=0.4 VJC=0.4 CJE=220E-12 MJE=0.35 VJE=0.73
+ TF=0.5E-9 TR=380E-9 RCO=9 GAMMA=2E-7 QUASIMOD=1
+ TRE1=0.0045 TRB1=0.0035 TRC1=0.0045 XTB=1.5 XTI=4


*
*                (c)  2014 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_IM
*SIMULATOR=PSPICE
*DATE=27-Jan-2014
*VERSION=1
*

.MODEL ZXTN4004K NPN IS=7.5E-13 NF=1.008 BF=440 IKF=3
+ VAF=220 ISE=1E-13 NE=1.4 NR=1.008 BR=36 IKR=0.5
+ VAR=39.6 ISC=1E-12 NC=1.2 RB=0.8 RE=0.026 RC=0.046
+ CJC=26E-12 MJC=0.4 VJC=0.4 CJE=220E-12 MJE=0.35 VJE=0.73
+ TF=0.5E-9 TR=380E-9 RCO=9 GAMMA=2E-7 QUASIMOD=1
+ TRE1=0.0045 TRB1=0.0035 TRC1=0.0045 XTB=1.5 XTI=4


*
*                (c)  2014 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*DIODES_INC_SPICE_MODEL_2DA1971
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=09/10/2012
*VERSION=2


.MODEL 2DA1971 PNP  IS =1.305E-13 NF =1.0004 BF =150 VAF=350
+ISE=7.5E-13 NE =1.5 RCO=20 GAMMA=2.5E-8 QUASIMOD=1 NR =1
+ISC=2E-13 NC =1.8 VAR=30  BR =2.5 RB =.1 RE =.01 RC =.01
+CJC=58E-12 MJC=.56 VJC=.775 CJE=404E-12  TF =1E-9 TR =1200E-9
+XTB=1.7 


*                (c)  2012 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*DIODES_INC_SPICE_MODEL_DA1201Y
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=06/07/2012
*VERSION=1



.MODEL DA1201Y PNP IS=1.6E-13 NF=1 BF=210 VAF=175 ISE=3E-14 IKF=4.2
+ NE=1.4 BR=12 VAR=5.15 ISC=1E-13 NC=1.08 IKR=0.7 RC=0.013 RB=0.2 RE=0.016
+ QUASIMOD=1 RCO=4 GAMMA=1.4E-8 CJC=42E-12 MJC=0.32 VJC=0.44 CJE=237E-12
+ MJE=0.44 VJE=0.85 TF=0.95E-9 TR=22E-8 TRC1=.005 TRB1=.005 TRE1=.005 XTB=1.4 
*


*DIODES_INC_SPICE_MODEL DXT2014P5
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=28Dec2012
*VERSION=1

.MODEL DXT2014P5 PNP IS=370E-14 NF=.99 BF=180 ISE=150E-15 NE=1.35 
+ BR=6 ISC=260E-15 NC=1.1 NR=.99 CJC=121E-12 MJC=0.4 VJC=0.6
+ CJE=687E-12 MJE=0.4 VJE=0.75 RC=40m RE=40m RB=.18 TF=.8n TR=150n XTB=1.65 NK=.78 IKF=5.1 EG=1.4


*                (c)  2012 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_IM
*SIMULATOR=PSPICE
*DATE=14-Jan-2014
*VERSION=1
*

.MODEL DXT696BK NPN IS=.98476E-12 NF=.999 BF=705 IKF=0.8 VAF=235
+ISE=8.1E-14 NE=1.36 NR=1.002 BR=20 IKR=.8 VAR=26 ISC=.66E-12
+NC=1.15 RB=.07 RE=.125 RC=.098 CJC=25.4E-12 MJC=.47 VJC=.445
+CJE=270E-12 TF=1.301E-9 TR =690E-9 XTB=1.4
+QUASIMOD=1 RCO=24 GAMMA=75E-8

*
*                (c)  2014 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*ZETEX FZT560 Spice Model v2.0 Last Revised 24/2/05
    *
    .MODEL FZT560 PNP IS=4E-14 NF=0.98 BF=140 VAF=104 ISE=1E-12 NE=1.54
    +RCO=100 GAMMA=1.5E-7 NR=1 BR=2 VAR=100 ISC=1e-13 NC=2 IKR=10E-3
    +RB=25 RE=.3 RC=.3 CJC=29E-12 MJC=0.364 VJC=0.511 CJE=100.3E-12
    +MJE=0.419 VJE=0.877 TF=2E-10 TR=1.5e-6 XTB=1.5 QUASIMOD=1
    *
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=27JUL2010
*VERSION=2
*
.MODEL DZT5551Q NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14
+ NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23
+ CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9
+ TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7
*
*


*ZETEX ZXTP25140BFH Spice Model v1.0 Last Revised 08/10/07
    *
    .MODEL ZXTP25140BFH PNP IS=1.6E-13 NF=1 BF=210 VAF=175 ISE=3E-14 IKF=4.2
    + NE=1.4 BR=12 VAR=5.15 ISC=1E-13 NC=1.08 IKR=0.7 RC=0.013 RB=0.2 RE=0.016
    + QUASIMOD=1 RCO=4 GAMMA=1.4E-8 CJC=42E-12 MJC=0.32 VJC=0.44 CJE=237E-12
    + MJE=0.44 VJE=0.85 TF=0.95E-9 TR=22E-8 TRC1=.005 TRB1=.005 TRE1=.005 XTB=1.4 
    *
    *$
    *


*SRC=DZTA42;DI_DZTA42Q;BJTs NPN; Si;  300V  0.500A  140MHz    -
.MODEL DI_DZTA42Q  NPN (IS=19.4f NF=1.00 BF=144 VAF=312
+ IKF=58.6m ISE=31.4f NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=90.0m RE=0.895 RB=3.58 RC=0.358
+ XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=8.82p VJC=0.300
+ MJC=0.300 TF=751p TR=185n EG=1.12 )


*SRC=BC846A;DI_BC846A;BJTs NPN; Si;  65.0V  0.100A  300MHz   Diodes Inc
BJTs
.MODEL DI_BC846A  NPN (IS=10.2f NF=1.00 BF=305 VAF=145
+ IKF=53.6m ISE=5.86p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.915 RB=3.66 RC=0.366
+ XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 
+ TF=416p TR=50.3n EG=1.12 )


*SRC=BC846B;DI_BC846B;BJTs NPN; Si;  65.0V  0.100A  300MHz   Diodes Inc
BJTs
.MODEL DI_BC846B  NPN (IS=10.2f NF=1.00 BF=650 VAF=145
+ IKF=39.5m ISE=2.93p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.105 RE=0.915 RB=3.66 RC=0.366
+ XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 
+ TF=385p TR=49.0n EG=1.12 )


*SRC=BC846AW;DI_BC846AW;BJTs NPN; Si;  65.0V  0.100A  300MHz   Diodes Inc
BJTs
.MODEL DI_BC846AW  NPN (IS=10.2f NF=1.00 BF=305 VAF=145
+ IKF=53.6m ISE=5.86p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.915 RB=3.66 RC=0.366
+ XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 
+ TF=416p TR=50.3n EG=1.12 )


*SRC=BC846BW;DI_BC846BW;BJTs NPN; Si;  65.0V  0.100A  300MHz   Diodes Inc
BJTs
.MODEL DI_BC846BW  NPN (IS=10.2f NF=1.00 BF=650 VAF=145
+ IKF=39.5m ISE=2.93p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.105 RE=0.915 RB=3.66 RC=0.366
+ XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 
+ TF=385p TR=49.0n EG=1.12 )


*ZETEX BSR43 Spice Model v2.0 Last Revised 24/2/05
    *
    .MODEL BSR43 NPN IS =6E-14 NF =0.99 BF =250 IKF=0.9
    +NK=0.7 VAF=270 ISE=1E-14 NE =1.2 NR =0.98 BR =30 IKR=0.5
    +VAR=27 ISC=1.2e-13 NC =1.2 RB =0.2 RE =0.08 RC =0.08 RCO=5
    +GAMMA=5E-9 CJC=15.9E-12 MJC=0.4 VJC=0.51 CJE=108E-12 
    +MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4 QUASIMOD=1
    *
    *$
    *


*SRC=DNBT8105;DI_DNBT8105;BJTs NPN; Si;  60.0V  1.00A  150MHz   Diodes Inc. Single NPN BJT
.MODEL DI_DNBT8105  NPN (IS=167f NF=1.00 BF=264 VAF=139
+ IKF=0.364 ISE=65.8p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.900 RE=0.231 RB=0.926 RC=92.6m
+ XTB=1.5 CJE=117p VJE=1.10 MJE=0.500 CJC=16.6p VJC=0.300
+ MJC=0.300 TF=973p TR=165n EG=1.12 )


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=10-Dec-2013
*VERSION=1
*

.MODEL DSS4160U NPN IS=6e-13 NF=1 ISE=30e-15 NE=1.35 BF=400
+ VAF=28 IKF=8.5 ISC=2e-13 NC=1.2 BR=15 NR=1 VAR=5.7 IKR=0.6 RE=0.029
+ RB=0.33 RC=0.01 CJE=160e-12 VJE=0.55 MJE=0.36 CJC=30e-12 VJC=0.5
+ MJC=0.35 TF=1.5e-9 TR=48e-9  QUASIMOD=1 RCO=.6 GAMMA=1.3e-9 NK=.7
+ XTB=1.4 TRE1=0.004 TRB1=0.003 TRC1=0.004


*
*                (c)  2013 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=10-Dec-2013
*VERSION=1
*

.MODEL DSS4160V NPN IS=6e-13 NF=1 ISE=30e-15 NE=1.35 BF=400
+ VAF=28 IKF=8.5 ISC=2e-13 NC=1.2 BR=15 NR=1 VAR=5.7 IKR=0.6 RE=0.029
+ RB=0.33 RC=0.01 CJE=160e-12 VJE=0.55 MJE=0.36 CJC=30e-12 VJC=0.5
+ MJC=0.35 TF=1.5e-9 TR=48e-9  QUASIMOD=1 RCO=.6 GAMMA=1.3e-9 NK=.7
+ XTB=1.4 TRE1=0.004 TRB1=0.003 TRC1=0.004


*
*                (c)  2013 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=06/01/2009
*VERSION=1
*
.MODEL DSS60601MZ4 NPN IS=1.0085E-12 NF=1.0001 BF=210 IKF=4 VAF=158
+ ISE=7E-13 NE=1.38 NR=0.9988 BR=90 IKR=3 VAR=46 ISC=4.6515E-13
+ NC=1.334 RB=0.2 RE=0.018 RC=0.016 CJC=93E-12 MJC=0.4348
+ VJC=0.6477 CJE=0.63E-9 TF=0.75E-9  TR=20E-9 XTB=1.5
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=19NOV2010
*VERSION=1
*
.MODEL DXT2010P5 NPN IS =1.0085E-12 NF =1.0001 BF =210 IKF=4 VAF=158
+ ISE=7E-13 NE =1.38 NR =0.9988 BR =90 IKR=3 VAR=46 ISC=4.6515E-13
+ NC =1.334 RB =0.2 RE =0.018 RC =0.016 CJC=93E-12 MJC=0.4348
+ VJC=0.6477 CJE=0.63E-9 TF =0.75E-9  TR =20E-9 XTB=1.5
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=19JAN11
*VERSION=1
*
.MODEL DXT2011P5 NPN IS=6E-13 NF=1 BF=240 IKF=10 VAF=500 ISE=1.8E-13
+ NE=1.42 NR=1 BR=40 IKR=1 VAR=28 ISC=8E-13 NC=1.18 RC=0.007 RB=0.15
+ RE=0.019 CJC=84E-12 MJC=0.35 VJC=0.43 CJE=700E-12 MJE=0.37 VJE=0.78
+ QUASIMOD=1 RCO=1.2 GAMMA=1.3E-8 TF=0.85E-9 TR=75E-9 XTB=1.4
+ TRC1=0.003 TRB1=0.003 TRE1=0.003
*
*$


*SRC=DXT651;DI_DXT651;BJTs NPN; Si;  60.0V  3.00A  200MHz    
.MODEL DI_DXT651  NPN (IS=7.42f NF=1.00 BF=206 VAF=139
+ IKF=1.98 ISE=13.4f NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=3.00 RE=32.0m RB=0.128 RC=12.8m
+ XTB=1.5 CJE=390p VJE=1.10 MJE=0.500 CJC=48.3p VJC=0.300
+ MJC=0.300 TF=626p TR=76.3n EG=1.12 )


*ZETEX FCX1053A Spice Model v1.0 Last Revised 3/1/03
    *
    .MODEL FCX1053A  NPN IS=2.1E-12  NF=1.0  BF=600  IKF=2.2  VAF=100
    +               ISE=0.9E-13  NE=1.25  NR=0.99  BR=150  IKR=2.5  VAR=15
    +               ISC=5.0E-10  NC=1.76  RB=0.1  RE=0.028  RC=0.016 
    +               CJC=75.1E-12  CJE=520E-12  MJC=0.415  MJE=0.367
    +               VJC=0.512  VJE=0.766  TF=550E-12  TR=22E-9
    *
    *$
    *


.MODEL FCX491 NPN IS=3.05E-13 NF=1.0034 BF=200 IKF=0.8 VAF=165
+ISE=8.0191E-14 NE=1.4126 NR=1.001 BR=50 IKR=0.6 VAR=69 
+ISC=1.6E-12 NC=1.38 RB=0.065 RE=0.109 RC=0.075 
+CJC=17.2E-12 MJC=0.3429 VJC=0.4298 CJE=96E-12 
+TF=0.71E-9 TR=2.5E-9
*
*$


*ZETEX FCX493 Spice Model v2.0 Last Revised 24/2/05
    *
    .MODEL FCX493 NPN IS =6E-14 NF =0.99 BF =250 IKF=0.9
    +NK=0.7 VAF=270 ISE=1E-14 NE =1.2 NR =0.98 BR =30 IKR=0.5
    +VAR=27 ISC=1.2e-13 NC =1.2 RB =0.2 RE =0.08 RC =0.08 RCO=5
    +GAMMA=5E-9 CJC=15.9E-12 MJC=0.4 VJC=0.51 CJE=108E-12 
    +MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4 QUASIMOD=1
    *
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=21JAN2011
*VERSION=1
*
.MODEL FMMT451 NPN IS =3.941445E-14 BF =175 VAF=109.45 NF =1 IKF=.8
+ISE=7.4025E-15 NE =1.3 BR =20.5 VAR=14.25 NR =.974 IKR=.1 ISC=3.157E-13
+NC =1.2 RB =1.1 RE =.1259 RC =.0539 CJE=63E-12 TF =.75E-9 CJC=15.8E-12
+TR =85E-9 VJC=.505 MJC=.39
*
*$


.MODEL FMMT491 NPN IS=3.05E-13 NF=1.0034 BF=200 IKF=0.8 VAF=165
+ISE=8.0191E-14 NE=1.4126 NR=1.001 BR=50 IKR=0.6 VAR=69 
+ISC=1.6E-12 NC=1.38 RB=0.065 RE=0.109 RC=0.075 
+CJC=17.2E-12 MJC=0.3429 VJC=0.4298 CJE=96E-12 
+TF=0.71E-9 TR=2.5E-9
*
*$


*ZETEX FMMT493 Spice Model v2.0 Last Revised 24/2/05
    *
    .MODEL FMMT493 NPN IS =6E-14 NF =0.99 BF =250 IKF=0.9
    +NK=0.7 VAF=270 ISE=1E-14 NE =1.2 NR =0.98 BR =30 IKR=0.5
    +VAR=27 ISC=1.2e-13 NC =1.2 RB =0.2 RE =0.08 RC =0.08 RCO=5
    +GAMMA=5E-9 CJC=15.9E-12 MJC=0.4 VJC=0.51 CJE=108E-12 
    +MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4 QUASIMOD=1
    *
    *$
    *


*ZETEX FMMT493A Spice Model v1.0 Last Revised 30/3/06
    *
    .MODEL FMMT493A NPN IS =6E-14 NF =0.99 BF =1100 IKF=1.1
    +NK=0.7 VAF=270 ISE=0.3E-14 NE =1.26 NR =0.98 BR =70 IKR=0.5
    +VAR=27 ISC=1.2e-13 NC =1.2 RB =0.2 RE =0.08 RC =0.08 RCO=8
    +GAMMA=5E-9 CJC=15.9E-12 MJC=0.4 VJC=0.51 CJE=108E-12 
    +MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4 QUASIMOD=1
    *
    *$
    *


*ZETEX FMMT620 Spice Model v1.0 Last Revised 12/12/02
    *
    .MODEL FMMT620  NPN IS =6.5E-13 BF =480 NF=1.003 VAF=150 IKF=1.5
    +ISE=2.00E-13 NE=1.42 BR=180 NR=1.0015 VAR=55 IKR=1 ISC=4.00E-12
    +NC=1.3 RB=0.04 RE=0.048 RC=0.065 CJE=2.13E-10 CJC=3.30E-11 VJC=0.48
    +MJC=0.41 TF =9E-10 TR=3.5E-8 
    *
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=23JUN10
*VERSION=1
*
.MODEL FMMTA06 NPN IS=3.8E-14 NF=1.008 BF=150 IKF=2 VAF=300 XTB=1.4
+ ISE=1E-14 NE=1.22 NR=1.015 BR=6 IKR=1.8 VAR=48 ISC=5E-13 NC=1.2
+ RB=1 RE=0.155 RC=0.061 CJC=18E-12 MJC=0.31 VJC=0.45 CJE=65E-12
+ MJE=0.34 VJE=0.7 TF=8E-10 TR=6E-7 QUASIMOD=1 RCO=17 GAMMA=1E-7 VO=20
*
*$


*ZETEX FZT1053A Spice Model v1.0 Last Revised 18/3/97
    *
    .MODEL FZT1053A  NPN IS=2.1E-12  NF=1.0  BF=600  IKF=2.2  VAF=100
    +               ISE=0.9E-13  NE=1.25  NR=0.99  BR=150  IKR=2.5  VAR=15
    +               ISC=5.0E-10  NC=1.76  RB=0.1  RE=0.028  RC=0.016 
    +               CJC=75.1E-12  CJE=520E-12  MJC=0.415  MJE=0.367
    +               VJC=0.512  VJE=0.766  TF=550E-12  TR=22E-9
    *
    *$
    *


.MODEL FZT491 NPN IS=3.05E-13 NF=1.0034 BF=200 IKF=0.8 VAF=165
+ISE=8.0191E-14 NE=1.4126 NR=1.001 BR=50 IKR=0.6 VAR=69 
+ISC=1.6E-12 NC=1.38 RB=0.065 RE=0.109 RC=0.075 
+CJC=17.2E-12 MJC=0.3429 VJC=0.4298 CJE=96E-12 
+TF=0.71E-9 TR=2.5E-9
*
*$


*ZETEX FZT493 Spice Model v2.0 Last Revised 24/2/05
    *
    .MODEL FZT493 NPN IS =6E-14 NF =0.99 BF =250 IKF=0.9
    +NK=0.7 VAF=270 ISE=1E-14 NE =1.2 NR =0.98 BR =30 IKR=0.5
    +VAR=27 ISC=1.2e-13 NC =1.2 RB =0.2 RE =0.08 RC =0.08 RCO=5
    +GAMMA=5E-9 CJC=15.9E-12 MJC=0.4 VJC=0.51 CJE=108E-12 
    +MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4 QUASIMOD=1
    *
    *$
    *


*ZETEX FZT651 Spice Model v1.0 Last Revised 16/1/91
    *
    .MODEL FZT651 NPN IS =2.218E-13 NF =.9956 BF =230 IKF=2 VAF=100 ISE=2.9E-14
    +NE =1.35 NR =.995 BR =56 IKR=1 VAR=30 ISC=2.971E-13 NC =1.321 RB =.04
    +RE =.075 RC =.069 CJC=51E-12 MJC=.42 VJC=.595 CJE=318E-12 TF =.77E-9
    +TR =27E-9
    *
    *$
    *


*ZETEX FZT653 Spice Model v1.0 Last Revised 18/3/97
    *
    .MODEL FZT653 NPN IS =3.8206E-13 NF =1.0025 BF =250 IKF=1.15 VAF=154
    +             ISE=1.035E-13 NE =1.3642 NR =1.0012 BR =50 IKR=0.42 VAR=38 
    +             ISC=7E-13 NC =1.19 RB =0.04 RE =0.0875 RC =0.06 
    +             CJC=45.5E-12 MJC=0.4534 VJC=0.5774 CJE=278E-12 
    +             TF =0.78E-9 TR =30E-9
    *
    *$
    *


*ZETEX FZT692B Spice Model v1.0 Last Revised 31/10/90
    *
    .MODEL FZT692B NPN IS =1.87E-12 NF =.9983 BF =1400 IKF=0.73 VAF=29
    +ISE=.21E-12 NE =1.378 NR =.997 BR =68 IKR=.55 VAR=12 ISC=.44E-12
    +NC =1.14 RB =.2 RE =.05 RC =.048 CJC=42.5E-12 MJC=.475 VJC=.625
    +CJE=233E-12 TF =.77E-9 TR =39E-9
    *Note: This Model may be inaccurate for collector currents above 1.5A.
    *
    *$
    *


*ZETEX FZT851 Spice Model v1.0 Last Revised 14/3/97
    *
    .MODEL FZT851 NPN IS =1.0085E-12 NF =1.0001 BF =240 IKF=5.1 VAF=158
    +             ISE=2E-13 NE =1.38 NR =0.9988 BR =110 IKR=5.5 VAR=46 
    +             ISC=4.6515E-13 NC =1.334 RB =0.025 RE =0.018 RC =0.015 
    +             CJC=155E-12 MJC=0.4348 VJC=0.6477 CJE=1.05E-9 
    +             TF =0.79E-9 TR =24E-9
    *
    *$
    *


*ZETEX FZT853 Spice Model v1.0 Last Revised 4/12/2001 
    *
    .MODEL FZT853 NPN IS =8E-13 NF =0.99 BF =240 IKF=1.4 VAF=200 
    +ISE=4E-13 NE =1.27 NR =0.99 BR =90 IKR=1.4 VAR=46 ISC=100E-12 
    +NC =1.65 CJC=127E-12 MJC=0.46 VJC=.65 CJE=1.07E-9 RB=.3 RC=.014 
    +RE=.014 TF =0.9E-9 TR =20e-9 
    *
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=21JUL2010
*VERSION=1
*
.MODEL MJD31C NPN IS=3.8206E-13 NF=1.0025 BF=250 IKF=1.15 VAF=154
+ ISE=1.035E-13 NE=1.3642 NR=1.0012 BR=50 IKR=0.42 VAR=38 ISC=7E-13
+ NC=1.19 RB=0.04 RE=0.0875 RC=0.06 CJC=45.5E-12 MJC=0.4534
+ VJC=0.5774 CJE=278E-12 TF=0.78E-9 TR=30E-9
*
*$


*SRC=MMBTA05;DI_MMBTA05;BJTs NPN; Si;  60.0V  0.500A  219MHz   Diodes Inc.
BJTs
.MODEL DI_MMBTA05  NPN (IS=51.3f NF=1.00 BF=547 VAF=139
+ IKF=0.146 ISE=11.1p NE=2.00 BR=4.00 NR=1.00
+ VAR=16.0 IKR=0.360 RE=0.223 RB=0.892 RC=89.2m
+ XTB=1.5 CJE=58.7p VJE=1.10 MJE=0.500 CJC=18.9p VJC=0.300 MJC=0.300 
+ TF=631p TR=110n EG=1.12 )


*SRC=MMBTA06;DI_MMBTA06;BJTs NPN; Si;  80.0V  0.500A  219MHz   Diodes Inc. Transistor 
.MODEL DI_MMBTA06  NPN (IS=50.8f NF=1.00 BF=479 VAF=161 
+ IKF=91.1m ISE=9.99p NE=2.00 BR=4.00 NR=1.00 
+ VAR=16.0 IKR=0.225 RE=0.103 RB=0.412 RC=41.2m 
+ XTB=1.5 CJE=58.7p VJE=1.10 MJE=0.500 CJC=18.9p VJC=0.300 
+ MJC=0.300 TF=576p TR=110n EG=1.12 )


*SRC=MMSTA05;DI_MMSTA05;BJTs NPN; Si;  60.0V  0.500A  219MHz   Diodes Inc.
BJTs
.MODEL DI_MMSTA05  NPN (IS=94.2f NF=1.00 BF=331 VAF=139
+ IKF=0.146 ISE=24.9p NE=2.00 BR=4.00 NR=1.00
+ VAR=16.0 IKR=0.360 RE=0.215 RB=0.860 RC=86.0m
+ XTB=1.5 CJE=58.7p VJE=1.10 MJE=0.500 CJC=18.9p VJC=0.300 MJC=0.300 
+ TF=633p TR=112n EG=1.12 )


*SRC=MMSTA06;DI_MMSTA06;BJTs NPN; Si;  80.0V  0.500A  219MHz   Diodes Inc.
BJTs
.MODEL DI_MMSTA06  NPN (IS=94.2f NF=1.00 BF=301 VAF=161
+ IKF=0.146 ISE=27.4p NE=2.00 BR=4.00 NR=1.00
+ VAR=16.0 IKR=0.360 RE=0.215 RB=0.860 RC=86.0m
+ XTB=1.5 CJE=58.7p VJE=1.10 MJE=0.500 CJC=18.9p VJC=0.300 MJC=0.300 
+ TF=633p TR=112n EG=1.12 )


*ZETEX ZTX1053A Spice Model v1.0 Last Revised 19/01/95
    *
    .MODEL ZTX1053A  NPN IS=2.1E-12  NF=1.0  BF=600  IKF=2.2  VAF=100
    +               ISE=0.9E-13  NE=1.25  NR=0.99  BR=150  IKR=2.5  VAR=15
    +               ISC=5.0E-10  NC=1.76  RB=0.1  RE=0.028  RC=0.016 
    +               CJC=75.1E-12  CJE=520E-12  MJC=0.415  MJE=0.367
    +               VJC=0.512  VJE=0.766  TF=550E-12  TR=22E-9
    *
    *$
    *


.MODEL ZTX453 NPN IS=3.8E-14 NF=1.008 BF=150 IKF=2 VAF=300 XTB=1.4
+ ISE=1E-14 NE=1.22 NR=1.015 BR=6 IKR=1.8 VAR=48 ISC=5E-13 NC=1.2
+ RB=1 RE=0.155 RC=0.061 CJC=18E-12 MJC=0.31 VJC=0.45 CJE=65E-12
+ MJE=0.34 VJE=0.7 TF=8E-10 TR=6E-7 QUASIMOD=1 RCO=17 GAMMA=1E-7 VO=20
*
*$


*ZETEX ZTX651 Spice Model v1.0 Last Revised 16/1/91
    *
    .MODEL ZTX651 NPN IS =2.218E-13 NF =.9956 BF =230 IKF=2 VAF=100 ISE=2.9E-14
    +NE =1.35 NR =.995 BR =56 IKR=1 VAR=30 ISC=2.971E-13 NC =1.321 RB =.04
    +RE =.075 RC =.069 CJC=51E-12 MJC=.42 VJC=.595 CJE=318E-12 TF =.77E-9
    +TR =27E-9
    *
    *$
    *


*ZETEX ZTX653 Spice Model v1.0 Last Revised 18/5/93
    *
    .MODEL ZTX653 NPN IS =3.8206E-13 NF =1.0025 BF =250 IKF=1.15 VAF=154
    +             ISE=1.035E-13 NE =1.3642 NR =1.0012 BR =50 IKR=0.42 VAR=38 
    +             ISC=7E-13 NC =1.19 RB =0.04 RE =0.0875 RC =0.06 
    +             CJC=45.5E-12 MJC=0.4534 VJC=0.5774 CJE=278E-12 
    +             TF =0.78E-9 TR =30E-9
    *
    *$
    *


*ZETEX ZTX692B Spice Model v1.0 Last Revised  31/10/90
    *
    .MODEL ZTX692B NPN IS =1.87E-12 NF =.9983 BF =1400 IKF=0.73 VAF=29
    +ISE=.21E-12 NE =1.378 NR =.997 BR =68 IKR=.55 VAR=12 ISC=.44E-12
    +NC =1.14 RB =.2 RE =.05 RC =.048 CJC=42.5E-12 MJC=.475 VJC=.625
    +CJE=233E-12 TF =.77E-9 TR =39E-9
    *Note: This Model may be inaccurate for collector currents above 1.5A.
    *
    *$
    *


*ZETEX ZTX851 Spice Model v1.0 Last Revised 21/1/93
    *
    .MODEL ZTX851 NPN IS =1.0085E-12 NF =1.0001 BF =240 IKF=5.1 VAF=158
    +             ISE=2E-13 NE =1.38 NR =0.9988 BR =110 IKR=5.5 VAR=46 
    +             ISC=4.6515E-13 NC =1.334 RB =0.025 RE =0.018 RC =0.015 
    +             CJC=155E-12 MJC=0.4348 VJC=0.6477 CJE=1.05E-9 
    +             TF =0.79E-9 TR =24E-9
    *
    *$
    *


*ZETEX ZTX853 Spice Model v1.0 Last Revised 30/7/98 
    *
    .MODEL ZTX853 NPN IS =8E-13 NF =0.99 BF =240 IKF=1.4 VAF=200 
    +ISE=4E-13 NE =1.27 NR =0.99 BR =90 IKR=1.4 VAR=46 ISC=100E-12 
    +NC =1.65 CJC=127E-12 MJC=0.46 VJC=.65 CJE=1.07E-9 RB=.3 RC=.014 
    +RE=.014 TF =0.9E-9 TR =20e-9 
    *
    *$
    *


*ZETEX ZX5T851A Spice Model v1.1 Last Revised 23/03/2006
    *
    .MODEL ZX5T851A NPN IS =1.0085E-12 NF =1.0001 BF =210 IKF=4 VAF=158
    +ISE=7E-13 NE =1.38 NR =0.9988 BR =90 IKR=3 VAR=46 ISC=4.6515E-13
    +NC =1.334 RB =0.2 RE =0.018 RC =0.016 CJC=93E-12 MJC=0.4348
    +VJC=0.6477 CJE=0.63E-9 TF =0.75E-9  TR =20E-9 XTB=1.5
    *
    *$
    *


*ZETEX ZX5T851G Spice Model v1.1 Last Revised 23/03/2006
    *
    .MODEL ZX5T851G NPN IS =1.0085E-12 NF =1.0001 BF =210 IKF=4 VAF=158
    +ISE=7E-13 NE =1.38 NR =0.9988 BR =90 IKR=3 VAR=46 ISC=4.6515E-13
    +NC =1.334 RB =0.2 RE =0.018 RC =0.016 CJC=93E-12 MJC=0.4348
    +VJC=0.6477 CJE=0.63E-9 TF =0.75E-9  TR =20E-9 XTB=1.5
    *
    *$
    *


.MODEL ZX5T853G NPN IS=6E-13 NF=1 BF=240 IKF=10 VAF=500 ISE=1.8E-13
+ NE=1.42 NR=1 BR=40 IKR=1 VAR=28 ISC=8E-13 NC=1.18 RC=0.007 RB=0.15
+ RE=0.019 CJC=84E-12 MJC=0.35 VJC=0.43 CJE=700E-12 MJE=0.37 VJE=0.78
+ QUASIMOD=1 RCO=1.2 GAMMA=1.3E-8 TF=0.85E-9 TR=75E-9 XTB=1.4
+ TRC1=0.003 TRB1=0.003 TRE1=0.003
*
*$


*ZETEX ZXT1053AK Spice Model v1.0 Last Revised 08/03/06
    *
    .MODEL ZXT1053AK  NPN IS=2.1E-12  NF=1.0  BF=600  IKF=2.2  VAF=100
    +               ISE=0.9E-13  NE=1.25  NR=0.99  BR=150  IKR=2.5  VAR=15
    +               ISC=5.0E-10  NC=1.76  RB=0.1  RE=0.028  RC=0.016 
    +               CJC=75.1E-12  CJE=520E-12  MJC=0.415  MJE=0.367
    +               VJC=0.512  VJE=0.766  TF=550E-12  TR=22E-9
    *
    *$
    *


*ZETEX ZXTN19055DZ Spice Model v1.0 Last Revised 10/10/07
    *
    .MODEL ZXTN19055DZ NPN IS=8E-13 NF=1 BF=520 IKF=9 VAF=150 ISE=9E-14
    + NE=1.42 NR=1 BR=80 IKR=2.2 VAR=22 ISC=6E-13 NC=1.23 RB=0.14 RE=0.011
    + RC=0.011 CJC=67E-12 MJC=0.35 VJC=0.47 CJE=360E-12 MJE=0.38 VJE=0.75
    + TF=7E-10 TR=1.7E-8 XTB=1.4 TRC1=.005 TRB1=.005 TRE1=.005 QUASIMOD=1
    + RCO=0.8 GAMMA=3.8E-9
    *
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=09FEB2011
*VERSION=2
*
.MODEL ZXTN19060CG NPN IS=6E-13 NF=1 BF=375 IKF=9 VAF=176 ISE=7E-14 NE=1.42
+NR=1 BR=65 IKR=.12 VAR=23.3 ISC=3E-13 NC=1.27 RB=0.17 RE=0.007 RC=0.005
+CJC=62E-12 MJC=0.38 VJC=0.51 CJE=379E-12 MJE=0.38 VJE=0.8 TF=10E-10
+TR=2.5E-8 XTB=1.4 TRC1=.01 TRB1=.01 TRE1=.01 QUASIMOD=1 RCO=1.1
+GAMMA=1.6E-8
*
*$


*ZETEX ZXTN19100CFF Spice Model v1.0 Last Revised 27/08/07
    *
    .MODEL ZXTN19100CFF NPN IS=5.7E-13 NF=1 BF=390 IKF=6 VAF=183 ISE=1E-13
    +NE=1.42 NR=1 BR=43 IKR=.1 VAR=32 ISC=5.5E-13 NC=1.25 RB=.15 RE=.01 RC=.01 
    +CJC=52E-12 MJC=0.378 VJC=0.45 CJE=373E-12 MJE=0.38 VJE=0.77 TF=8.5E-10 
    +TR=5.1E-8 XTB=1.4 TRC1=.004 TRB1=.004 TRE1=.004 QUASIMOD=1 RCO=2.1 
    +GAMMA=1.9E-8 
    *
    *$
    *


.MODEL ZXTN19100CZ NPN IS=5.7E-13 NF=1 BF=390 IKF=6 VAF=183 ISE=1E-13
+ NE=1.42 NR=1 BR=43 IKR=.1 VAR=32 ISC=5.5E-13 NC=1.25 RB=.15 RE=.01 RC=.01 
+ CJC=52E-12 MJC=0.378 VJC=0.45 CJE=373E-12 MJE=0.38 VJE=0.77 TF=8.5E-10 
+ TR=5.1E-8 XTB=1.4 TRC1=.004 TRB1=.004 TRE1=.004 QUASIMOD=1 RCO=2.1 
+ GAMMA=1.9E-8 
*
*$


*ZETEX  ZXTN2010A Spice Model v1.0 Last revision 24/03/2006
    *
    .MODEL ZXTN2010A NPN IS =1.0085E-12 NF =1.0001 BF =210 IKF=4 VAF=158
    +ISE=7E-13 NE =1.38 NR =0.9988 BR =90 IKR=3 VAR=46 ISC=4.6515E-13
    +NC =1.334 RB =0.2 RE =0.018 RC =0.016 CJC=93E-12 MJC=0.4348
    +VJC=0.6477 CJE=0.63E-9 TF =0.75E-9  TR =20E-9 XTB=1.5
    *
    *$
    *


*ZETEX  ZXTN2010Z Spice Model v1.0 Last revision 24/10/2006
    *
    .MODEL ZXTN2010Z NPN IS =1.0085E-12 NF =1.0001 BF =210 IKF=4 VAF=158
    +ISE=7E-13 NE =1.38 NR =0.9988 BR =90 IKR=3 VAR=46 ISC=4.6515E-13
    +NC =1.334 RB =0.2 RE =0.018 RC =0.016 CJC=93E-12 MJC=0.4348
    +VJC=0.6477 CJE=0.63E-9 TF =0.75E-9  TR =20E-9 XTB=1.5
    *
    *$
    *


.MODEL ZXTN2011G NPN IS=6E-13 NF=1 BF=240 IKF=10 VAF=500 ISE=1.8E-13
+ NE=1.42 NR=1 BR=40 IKR=1 VAR=28 ISC=8E-13 NC=1.18 RC=0.007 RB=0.15
+ RE=0.019 CJC=84E-12 MJC=0.35 VJC=0.43 CJE=700E-12 MJE=0.37 VJE=0.78
+ QUASIMOD=1 RCO=1.2 GAMMA=1.3E-8 TF=0.85E-9 TR=75E-9 XTB=1.4
+ TRC1=0.003 TRB1=0.003 TRE1=0.003
*
*$


.MODEL ZXTN2011Z NPN IS=6E-13 NF=1 BF=240 IKF=10 VAF=500 ISE=1.8E-13
+ NE=1.42 NR=1 BR=40 IKR=1 VAR=28 ISC=8E-13 NC=1.18 RC=0.007 RB=0.15
+ RE=0.019 CJC=84E-12 MJC=0.35 VJC=0.43 CJE=700E-12 MJE=0.37 VJE=0.78
+ QUASIMOD=1 RCO=1.2 GAMMA=1.3E-8 TF=0.85E-9 TR=75E-9 XTB=1.4
+ TRC1=0.003 TRB1=0.003 TRE1=0.003
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=09/04/2009
*VERSION=2
*
.MODEL ZXTN2018F NPN IS=3E-13 NF=1 BF=245 IKF=8.5 VAF=87 ISE=1.3E-13
+ NE=1.42 NR=1 BR=50 IKR=1 VAR=33 ISC=7e-13 NC=1.4 RE=0.0077 RB=0.15
+ RC=0.0049 QUASIMOD=1 RCO=0.75 GAMMA=3E-9 VO=11.5 CJE=610E-12 VJE=0.7
+ MJE=0.36 CJC=90E-12 VJC=0.6 MJC=0.36 TF=8.8E-10 TR=2.5e-8 XTB=1.4
+ TRE1=0.004 TRB1=0.004 TRC1=0.004
*
*$


*ZETEX ZXTN2020F Spice Model v1.0 Last Revised 15/03/06 
    *
    .MODEL ZXTN2020F NPN IS=500E-15 NF=.998 BF=270 IKF=15 VAF=390 ISE=300E-15
    +NE =1.46 NR=1 BR=40 IKR=1 VAR=23 ISC=500E-15 NC=1.37 RC=0.006 RB =0.15 
    +RE =0.010 CJC=72E-12 MJC=0.42 VJC=0.68 CJE=580E-12 MJE=0.35 VJE=0.68
    +TF=0.8E-9 TR=40E-9 XTB=1.4 QUASIMOD=1 RCO=1.2 GAMMA=5E-9 
    *
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=26JUL2010
*VERSION=1
*
.MODEL ZXTN2038F NPN IS=3.05E-13 NF=1.0034 BF=200 IKF=0.8 VAF=165
+ ISE=8.0191E-14 NE=1.4126 NR=1.001 BR=50 IKR=0.6 VAR=69 ISC=1.6E-12
+ NC=1.38 RB=0.065 RE=0.109 RC=0.075 CJC=17.2E-12 MJC=0.3429
+ VJC=0.4298 CJE=96E-12 TF=0.71E-9 TR=2.5E-9
*
*$


*ZETEX ZXTN25060BFH Spice Model v1.0 Last revision 05/06/07
    *
    .MODEL ZXTN25060BFH NPN IS=2E-13 NF=1 BF=315 IKF=4.0 VAF=210 ISE=1.2E-13
    +NE=1.3 NR=1 BR=12 IKR=0.5 VAR=27 ISC=4.2e-13 NC=1.33 RE=.005 RB=0.25
    +RC=.005 RCO=1.9 GAMMA=16E-9 QUASIMOD=1 CJE=222E-12 VJE=0.73 MJE=0.35
    +CJC=34E-12 VJC=0.46 MJC=0.34 TF=7.4E-10 TR=7.6e-8 XTB=1.4 TRE1=.004
    +TRB1=.004 TRC1=.004
    *
    *$
    *


*ZETEX ZXTN25060BZ Spice Model v1.0 Last revision 05/06/07
    *
    .MODEL ZXTN25060BZ NPN IS=2E-13 NF=1 BF=315 IKF=4.0 VAF=210 ISE=1.2E-13
    +NE=1.3 NR=1 BR=12 IKR=0.5 VAR=27 ISC=4.2e-13 NC=1.33 RE=.005 RB=0.25
    +RC=.005 RCO=1.9 GAMMA=16E-9 QUASIMOD=1 CJE=222E-12 VJE=0.73 MJE=0.35
    +CJC=34E-12 VJC=0.46 MJC=0.34 TF=7.4E-10 TR=7.6e-8 XTB=1.4 TRE1=.004
    +TRB1=.004 TRC1=.004
    *
    *$
    *


*ZETEX ZXTN25100BFH Spice Model v1.0 Last Revised 11/10/07
    *
    .MODEL ZXTN25100BFH NPN IS=3E-13 NF=1 BF=315 IKF=5 VAF=256 ISE=1.1E-13
    + NE=1.43 NR=1 BR=31 IKR=1 VAR=40 ISC=3e-13 NC=1.15 RB=0.15 RE=.014
    + RC=.015 RCO=4.5 GAMMA=4.5E-8 CJC=30E-12 MJC=0.3 VJC=0.42 CJE=210E-12
    + MJE=0.38 VJE=0.8 TF=0.8E-9 TR=70e-9 XTB=1.4 TRC1=.003 TRB1=.003
    + TRE1=.003 QUASIMOD=1
    *
    *$
    *


*ZETEX ZXTN25100DFH Spice Model v1.0 Last Revised 09/10/07
    *
    .MODEL ZXTN25100DFH  NPN IS=6E-13 NF=1 BF=550 IKF=4 VAF=117 ISE=1.3E-13
    + NE=1.42 NR=1 BR=35 IKR=1 VAR=36 ISC=5E-13 NC=1.18 RB=0.2 RE=0.0013
    + RC=0.0016 CJC=28E-12 MJC=0.3 VJC=0.4 CJE=182E-12 MJE=0.39 VJE=0.78
    + TF=7.5E-10 TR=5.3E-8 XTB=1.4 TRC1=.005 TRB1=.005 TRE1=.005 QUASIMOD=1
    + RCO=7 GAMMA=8.3E-8
    *
    *$
    *


.MODEL ZXTN25100DG  NPN IS=6E-13 NF=1 BF=550 IKF=4 VAF=117 ISE=1.3E-13
+ NE=1.42 NR=1 BR=35 IKR=1 VAR=36 ISC=5E-13 NC=1.18 RB=0.2 RE=0.0013
+ RC=0.0016 CJC=28E-12 MJC=0.3 VJC=0.4 CJE=182E-12 MJE=0.39 VJE=0.78
+ TF=7.5E-10 TR=5.3E-8 XTB=1.4 TRC1=.005 TRB1=.005 TRE1=.005 QUASIMOD=1
+ RCO=7 GAMMA=8.3E-8
*
*$


.MODEL ZXTN25100DZ  NPN IS=6E-13 NF=1 BF=550 IKF=4 VAF=117 ISE=1.3E-13
+ NE=1.42 NR=1 BR=35 IKR=1 VAR=36 ISC=5E-13 NC=1.18 RB=0.2 RE=0.0013
+ RC=0.0016 CJC=28E-12 MJC=0.3 VJC=0.4 CJE=182E-12 MJE=0.39 VJE=0.78
+ TF=7.5E-10 TR=5.3E-8 XTB=1.4 TRC1=.005 TRB1=.005 TRE1=.005 QUASIMOD=1
+ RCO=7 GAMMA=8.3E-8
*
*$


*DIODES_INC_SPICE_MODEL ZXTN26070CV
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=10Nov2011
*VERSION=1

.MODEL ZXTN26070 NPN IS=300E-15 NF=1 BF=350 ISE=60E-15 NE=1.35 
+ BR=16 ISC=400E-15 NC=1.25 NR=1 CJC=30.37E-12 MJC=0.33 VJC=0.5
+ CJE=160.7E-12 MJE=0.37 VJE=0.75 RC=93.2m RE=30m RB=2 TF=.8n TR=80n


.SIMULATOR DEFAULT


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=27JAN2011
*VERSION=1
*
.MODEL ZXTN620MA NPN IS =6.5E-13 BF =480 NF=1.003 VAF=150 IKF=1.5
+ISE=2.00E-13 NE=1.42 BR=180 NR=1.0015 VAR=55 IKR=1 ISC=4.00E-12
+NC=1.3 RB=0.04 RE=0.048 RC=0.065 CJE=2.13E-10 CJC=3.30E-11 VJC=0.48
+MJC=0.41 TF =9E-10 TR=3.5E-8
*
*$


*SRC=DMB2227A;DI_DMB2227A_NPN;BJTs NPN; Si;  40.0V  0.600A  410MHz    -
.MODEL DI_DMB2227A_NPN  NPN (IS=9.69f NF=1.00 BF=272 VAF=114
+ IKF=0.493 ISE=11.7f NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.750 RE=0.253 RB=1.01 RC=0.101
+ XTB=1.5 CJE=29.0p VJE=1.10 MJE=0.500 CJC=14.7p VJC=0.300
+ MJC=0.300 TF=362p TR=60.3n EG=1.12 )


*SRC=DMB2227A;DI_DMB2227A_PNP;BJTs PNP; Si;  60.0V  0.600A  360MHz    -
.MODEL DI_DMB2227A_PNP  NPN (IS=6.60f NF=1.00 BF=151 VAF=139
+ IKF=0.394 ISE=17.3f NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.600 RE=0.434 RB=1.74 RC=0.174
+ XTB=1.5 CJE=31.0p VJE=1.10 MJE=0.500 CJC=14.8p VJC=0.300
+ MJC=0.300 TF=416p TR=71.8n EG=1.12 )


*****************************************************************************************************************************************
*SRC=MMDT2227;DI_MMDT2227_NPN;BJTs NPN; Si;  40.0V  0.600A  300MHz   Diodes Inc. BJTs - Complementary
.MODEL DI_MMDT2227_NPN  NPN (IS=61.0f NF=1.00 BF=410 VAF=114
+ IKF=0.121 ISE=14.8p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.300 RE=0.269 RB=1.08 RC=0.108
+ XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=15.3p VJC=0.300
+ MJC=0.300 TF=496p TR=81.1n EG=1.12 )

*SRC=MMDT2227;DI_MMDT2227_PNP;BJTs PNP; Si;  60.0V  0.600A  300MHz   Diodes Inc. BJTs - Complementary
.MODEL DI_MMDT2227_PNP  PNP (IS=61.2f NF=1.00 BF=410 VAF=139
+ IKF=0.279 ISE=22.4p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.690 RE=0.361 RB=1.44 RC=0.144
+ XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300
+ MJC=0.300 TF=491p TR=81.1n EG=1.12 )
*****************************************************************************************************************************************


*SRC=MMDT2227M;DI_MMDT2227M_NPN Element Only;BJTs NPN; Si;  40.0V  0.600A  300MHz   Diodes Inc. BJTs - Complementary
.MODEL DI_MMDT2227M_NPN  NPN (IS=61.0f NF=1.00 BF=410 VAF=114
+ IKF=0.121 ISE=14.8p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.300 RE=0.269 RB=1.08 RC=0.108
+ XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=15.3p VJC=0.300
+ MJC=0.300 TF=496p TR=81.1n EG=1.12 )

*SRC=MMDT2227M;DI_MMDT2227M_PNP Element Only;BJTs PNP; Si;  60.0V  0.600A  300MHz   Diodes Inc. BJTs - Complementary
.MODEL DI_MMDT2227M_PNP  PNP (IS=61.2f NF=1.00 BF=410 VAF=139
+ IKF=0.279 ISE=22.4p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.690 RE=0.361 RB=1.44 RC=0.144
+ XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300
+ MJC=0.300 TF=491p TR=81.1n EG=1.12 )


*
.SUBCKT ZDT6702 1 2 3 4 5 6 7 8
* pins           E2, B2, E1, B1, C1, C1, C2, C2
*
Q11 12 4 11 SUB603
Q12 12 11 3 SUB603 3.46
Q21 10 2 9 SUB702
Q22 10 9 1 SUB702 3.46
R1 5 12 0.001
R2 6 12 0.001
R3 7 10 0.001
R4 8 10 0.001
*
.MODEL SUB603 NPN IS=1E-13 BF=130 VAF=200 NF=1 IKF=0.45 ISE=1.8E-13
+ NE=1.5 BR=20 VAR=30 NR=1 IKR=0.45 ISC=7E-13 NC=1.2 RB=0.3 RE=0.3
+ RC=0.5  CJE=115E-12 CJC=11E-12 VJC=0.85 MJC=0.41 TF=1E-9 TR=250E-9
+ XTB=1.5
*
.MODEL SUB702 PNP IS =.5E-13 BF =103 VAF=200 NF =1 IKF=.55
+ ISE=.75E-14 NE =1.5 BR =15 VAR=30 NR =1 IKR=.45 ISC=3E-13 
+ NC=1.2 RB=0.3 RE=0.3 RC=0.3  CJE=140E-12 CJC=20E-12 
+ VJC=0.85 MJC=0.41 TF=1E-9 TR=290E-9 XTB=1.4
*
.ENDS ZDT6702
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=10FEB2011
*VERSION=1
*PIN_ORDER         
* 1=E2    8=C2
* 2=B2    7=C2
* 3=E1    6=C1
* 4=B1    5=C1
*
.SUBCKT ZDT6753 1 2 3 4 5 6 7 8
Q1 11 4 3 Nmod
Q2 12 2 1 Pmod
RP1 11 5 0.001
RP2 11 6 0.001
RP3 12 7 0.001
RP4 12 8 0.001
*
.MODEL Nmod NPN IS =3.8206E-13 NF =1.0025 BF =250 IKF=1.15 VAF=154
+ ISE=1.035E-13 NE =1.3642 NR =1.0012 BR =50 IKR=0.42 VAR=38 
+ ISC=7E-13 NC =1.19 RB =0.04 RE =0.0875 RC =0.06 
+ CJC=45.5E-12 MJC=0.4534 VJC=0.5774 CJE=278E-12 
+ TF =0.78E-9 TR =30E-9
.MODEL Pmod PNP IS =3.2007E-13 NF =1.0041 BF =200 IKF=1.6 VAF=76
+ ISE=8E-14 NE =1.57 NR =1.0008 BR =33 IKR=0.45 VAR=51 
+ ISC=6E-14 NC =1.079 RB =0.087 RE =0.08 RC =0.07 
+ CJC=80E-12 MJC=0.4896 VJC=0.7676 CJE=350E-12 
+ TF =0.86E-9 TR =24E-9
.ENDS
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=24JAN2011
*VERSION=1
*PIN_ORDER         
*1=B1
*2=E1
*3=B2
*4=E2
*5=C2
*6=C2
*7=C1
*8=C1
*
.SUBCKT ZXTC6720MC 1 2 3 4 5 6 7 8
Q1 10 1 2 Nmod
Q2 20 3 4 Pmod
RP1 10 7 0.001
RP2 10 8 0.001
RP3 20 5 0.001
RP4 20 6 0.001
*
.MODEL Nmod NPN IS =6.5E-13 BF =480 NF=1.003 VAF=150 IKF=1.5
+ISE=2.00E-13 NE=1.42 BR=180 NR=1.0015 VAR=55 IKR=1 ISC=4.00E-12
+NC=1.3 RB=0.04 RE=0.048 RC=0.065 CJE=2.13E-10 CJC=3.30E-11 VJC=0.48
+MJC=0.41 TF =9E-10 TR=3.5E-8
.MODEL Pmod PNP IS =6.348E-13  BF =450 IKF =1.25 VAF =30.24 
+ ISE=1.375E-13 NE =1.5 NR =1.00 BR =25 IKR=0.8 
+ VAR=12.6 ISC=1E-13 NC =1.093 RB =0.081 RE =0.09
+ RC =0.1 CJC=49.87E-12 MJC=0.494 VJC=0.7653 
+ CJE=199E-12 MJE=0.5045 VJE=0.9617 TF =0.57E-9 
+ TR =57E-9
.ENDS
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=23JUL2010
*VERSION=1
*PIN_ORDER         P1=C1, P2=B1, P3=C2, P4=E2, P5=B2, P6=E1
*
.SUBCKT ZXTD4591E6 P1 P2 P3 P4 P5 P6
Q1 P1 P2 P6 Nmod
Q2 P3 P5 P4 Pmod
*
.MODEL Nmod NPN IS=3.05E-13 NF=1.0034 BF=200 IKF=0.8 VAF=165
+ ISE=8.0191E-14 NE=1.4126 NR=1.001 BR=50 IKR=0.6 VAR=69 
+ ISC=1.6E-12 NC=1.38 RB=0.065 RE=0.109 RC=0.075 
+ CJC=17.2E-12 MJC=0.3429 VJC=0.4298 CJE=96E-12 
+ TF=0.71E-9 TR=2.5E-9
.ENDS ZXTD4591E6
.MODEL Pmod PNP IS =3.2E-14 BF =170 VAF=45 NF =0.977 IKF=1.25 ISE=7E-15
+ NE =1.35 BR =50 VAR=50 NR =.986 IKR=0.15 ISC=0.9E-14 NC =1.08 RB =0.16
+ RE =0.195 RC =0.185 CJE=104E-12 TF =0.7E-9 CJC=30.5E-12 TR =3E-9 VJC=0.395
+ MJC=0.415
*
*$


*SRC=BC856AS;DI_BC856AS;BJTs PNP; Si;  65.0V  0.100A  400MHz    Diodes Inc
.MODEL DI_BC856AS  PNP (IS=10.2f NF=1.00 BF=342 VAF=145
+ IKF=60.7m ISE=5.11p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.150 RE=0.735 RB=2.94 RC=0.294
+ XTB=1.5 CJE=21.1p VJE=1.10 MJE=0.500 CJC=7.67p VJC=0.300
+ MJC=0.300 TF=314p TR=61.2n EG=1.12 )


*****************************************************************************************************************************************
*SRC=MMDT2907A;DI_MMDT2907A;BJTs PNP; Si;  60.0V  0.600A  300MHz   Diodes Inc. BJTs - Single device of  dual
.MODEL DI_MMDT2907A  PNP (IS=61.2f NF=1.00 BF=410 VAF=139
+ IKF=0.279 ISE=22.4p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.690 RE=0.361 RB=1.44 RC=0.144
+ XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300
+ MJC=0.300 TF=491p TR=81.1n EG=1.12 )
*****************************************************************************************************************************************


*SRC=MMDT2907V;DI_MMDT2907V;BJTs PNP; Si;  60.0V  0.600A  148MHz   Diodes Inc. Single element of dual BJTs
.MODEL DI_MMDT2907V  PNP (IS=59.8f NF=1.00 BF=312 VAF=139
+ IKF=0.219 ISE=25.8p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.540 RE=1.56 RB=6.25 RC=0.625
+ XTB=1.5 CJE=148p VJE=1.10 MJE=0.500 CJC=47.8p VJC=0.300
+ MJC=0.300 TF=912p TR=166n EG=1.12 )


.SUBCKT ZDT751 1 2 3 4 5 6 7 8
*            E2 B2 E1 B1 C1 C1 C2 C2
Q1 9 4 3 Mod1
Q2 10 2 1 Mod1
R1 5 9 0.001
R2 6 9 0.001
R3 7 10 0.001
R4 8 10 0.001
*
.MODEL Mod1 PNP IS=2.715E-13 BF=170 VAF=70 NF=1.004 IKF=2.75 ISE=1E-13
+ NE=1.535 BR=23 VAR=40 NR=1.005 IKR=.55 ISC=5.15E-14 NC=1.13 RB=.07
+ RE=.065 RC=.085 CJE=360E-12 TF=.94E-9 CJC=90E-12 TR=60E-9 VJC=.705
+ MJC=.46
*
.ENDS ZDT751
*
*$


*SRC=BC846AS;DI_BC846AS;BJTs NPN; Si;  65.0V  0.100A  250MHz    Diodes Inc
.MODEL DI_BC846AS  PNP (IS=10.1f NF=1.00 BF=301 VAF=145
+ IKF=54.7m ISE=5.50p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.705 RB=2.82 RC=0.282
+ XTB=1.5 CJE=19.1p VJE=1.10 MJE=0.500 CJC=5.37p VJC=0.300
+ MJC=0.300 TF=564p TR=98.4n EG=1.12


.SUBCKT ZDT1053 1 2 3 4 5 6 7 8
*            E2 B2 E1 B1 C1 C1 C2 C2
Q1 9 4 3 Mod1
Q2 10 2 1 Mod1
R1 5 9 0.001
R2 6 9 0.001
R3 7 10 0.001
R4 8 10 0.001
*
.MODEL Mod1 NPN IS=2.1E-12 NF=1.0 BF=600 IKF=2.2 VAF=100
+ ISE=0.9E-13 NE=1.25 NR=0.99 BR=150 IKR=2.5 VAR=15
+ ISC=5.0E-10 NC=1.76 RB=0.1 RE=0.028 RC=0.016
+ CJC=75.1E-12 CJE=520E-12  MJC=0.415 MJE=0.367
+ VJC=0.512 VJE=0.766 TF=550E-12 TR=22E-9
*
.ENDS ZDT1053
*
*$


*SRC=BC856A;DI_BC856A;BJTs PNP; Si;  65.0V  0.100A  250MHz   Diodes Inc. BJTs
.MODEL DI_BC856A  PNP (IS=10.2f NF=1.00 BF=342 VAF=145
+ IKF=72.9m ISE=5.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.180 RE=0.715 RB=2.86 RC=0.286
+ XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300
+ MJC=0.300 TF=581p TR=97.8n EG=1.12 )


*SRC=BC856AW;DI_BC856AW;BJTs PNP; Si;  65.0V  0.100A  250MHz   Diodes Inc. BJTs
.MODEL DI_BC856AW  PNP (IS=10.2f NF=1.00 BF=342 VAF=145
+ IKF=72.9m ISE=5.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.180 RE=0.715 RB=2.86 RC=0.286
+ XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300
+ MJC=0.300 TF=581p TR=97.8n EG=1.12 )


*DIODES_INC_SPICE_MODEL BC856B
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=21May2012
*VERSION=1

.MODEL BC856B PNP IS=15E-15 NF=1 BF=360 ISE=100E-18 NE=1.05 
+ BR=2 ISC=1.8E-14 NC=1.05 NR=1 CJC=8.26E-12 MJC=0.33 VJC=0.48
+ CJE=14.6E-12 MJE=0.37 VJE=0.75 RC=.313 RE=.782 RB=3.5 VAF=20 IKF=130m XTB=1.4 NK=.7 QUASIMOD=1 RCO=1 EG=1.11

.SIMULATOR DEFAULT


*SRC=BC856BW;DI_BC856BW;BJTs PNP; Si;  80.0V  0.200A  257MHz   Diodes Inc. Transistor
.MODEL DI_BC856BW  PNP (IS=3.90f NF=1.00 BF=408 VAF=161
+ IKF=91.1m ISE=3.25p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.225 RE=0.782 RB=3.13 RC=0.313
+ XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300
+ MJC=0.300 TF=548p TR=94.5n EG=1.12 )


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=08FEB2011
*VERSION=1
*
.MODEL BSR33 PNP IS=2E-13 NF=1 BF=300 IKF=0.8 
+ VAF=44 ISE=1E-13 NE=1.4 RCO=4.5 GAMMA=5E-9 
+ NR=1 BR=20 IKR=0.2 VAR=10 ISC=2e-13 NC=1.25 
+ RB=0.15 RE=0.15 RC=0.2 QUASIMOD=1
+ CJC=36E-12 MJC=0.45 VJC=0.75 CJE=110E-12 
+ TF=0.8E-9 TR=70e-9 XTB=1.4
*
*$


*SRC=DPBT8105;DI_DPBT8105;BJTs PNP; Si;  80.0V  1.00A  150MHz   Diodes Inc. BJT PNP
.MODEL DI_DPBT8105  PNP (IS=101f NF=1.00 BF=410 VAF=161
+ IKF=0.304 ISE=29.9p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.750 RE=0.281 RB=1.13 RC=0.113
+ XTB=1.5 CJE=117p VJE=1.10 MJE=0.500 CJC=28.4p VJC=0.300
+ MJC=0.300 TF=972p TR=162n EG=1.12 )


*SRC=DPLS160;DI_DPLS160;BJTs PNP; Si;  60.0V  1.00A  240MHz    
.MODEL DI_DPLS160  PNP (IS=2.94f NF=1.00 BF=327 VAF=139
+ IKF=0.989 ISE=5.32f NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=1.50 RE=64.0m RB=0.256 RC=25.6m
+ XTB=1.5 CJE=130p VJE=1.10 MJE=0.500 CJC=31.2p VJC=0.300
+ MJC=0.300 TF=607p TR=49.8n EG=1.12 )


*SRC=DPLS160V;DI_DPLS160V;BJTs PNP; Si;  60.0V  1.00A  240MHz    
.MODEL DI_DPLS160V  PNP (IS=2.94f NF=1.00 BF=327 VAF=139
+ IKF=0.989 ISE=5.32f NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=1.50 RE=64.0m RB=0.256 RC=25.6m
+ XTB=1.5 CJE=130p VJE=1.10 MJE=0.500 CJC=31.2p VJC=0.300
+ MJC=0.300 TF=607p TR=49.8n EG=1.12 )


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=24/04/2009
*VERSION=1
*
.MODEL DSS5160U PNP IS=2.2e-13 NF=1 ISE=8e-14 NE=1.49 BF=300
+ VAF=51 IKF=2.6 ISC=8e-14 NC=1.2 BR=24 VAR=15 IKR=0.75 RE=33e-3
+ RB=1000e-3 RC=112e-3 CJE=168e-12 VJE=0.8 MJE=0.45 CJC=49e-12
+ VJC=0.7 MJC=0.47 TF=4e-10 TR=21e-9 XTB=1.6 QUASIMOD=1
+ RCO=1.4 GAMMA=15e-10
* 
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_IM
*SIMULATOR=PSPICE
*DATE=10-Dec-2014
*VERSION=1
*

.MODEL DSS5160V PNP IS=2.2e-13 NF=1 ISE=8e-14 NE=1.49 BF=300
+ VAF=51 IKF=2.6 ISC=8e-14 NC=1.2 BR=24 VAR=15 IKR=0.75 RE=33e-3
+ RB=1000e-3 RC=112e-3 CJE=168e-12 VJE=0.8 MJE=0.45 CJC=49e-12
+ VJC=0.7 MJC=0.47 TF=4e-10 TR=21e-9 XTB=1.6 QUASIMOD=1
+ RCO=1.4 GAMMA=15e-10


*
*                (c)  2014 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=06/01/2009
*VERSION=1
*
.MODEL DSS60600MZ4 PNP IS=5.3E-13 BF=220 NF=1.0 VAF=84 IKF=11 
+ ISE=5E-14 NE=1.4 BR=45 NR=1 VAR=8.9 IKR=5 ISC=5E-14 NC=1.07 RE=0.015
+ RB=0.27 RC=0.022 CJE=750E-12 VJE=0.68 MJE=0.4 CJC=170E-12 VJC=0.55 
+ MJC=0.4 TF=0.5E-9 TR=2.2E-8 RCO=0.22 GAMMA=5e-10 QUASIMOD=1 
+ TRE1=.005 TRB1=.005 XTB=1.4
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=19JAN11
*VERSION=1
*
.MODEL DXT2013P5 PNP IS=1E-13 NF=1 BF=200 VAF=44 ISE=1.3E-13 IKF=8 NE=1.6
+NR=1 BR=22 VAR=16 ISC=1.3E-13 IKR=4 NC=1.4 RC=0.017 RB=0.13 RE=0.019
+CJC=136E-12 MJC=0.41 VJC=0.50 CJE=570E-12 MJE=0.45 VJE=0.86 TF=0.7E-9
+TR=45E-9 XTB=1.5 QUASIMOD=1 RCO=0.7 GAMMA=5E-10
*
*$


*SRC=DXT2907A;DI_DXT2907A;BJTs PNP; Si;  60.0V  0.600A  360MHz    -
.MODEL DI_DXT2907A  NPN (IS=6.60f NF=1.00 BF=151 VAF=139
+ IKF=0.394 ISE=17.3f NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.600 RE=0.434 RB=1.74 RC=0.174
+ XTB=1.5 CJE=31.0p VJE=1.10 MJE=0.500 CJC=14.8p VJC=0.300
+ MJC=0.300 TF=416p TR=71.8n EG=1.12 )


*SRC=DZT2907A;DI_DZT2907A;BJTs PNP; Si;  60.0V  0.600A  360MHz    -
.MODEL DI_DZT2907A  NPN (IS=6.60f NF=1.00 BF=151 VAF=139
+ IKF=0.394 ISE=17.3f NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.600 RE=0.434 RB=1.74 RC=0.174
+ XTB=1.5 CJE=31.0p VJE=1.10 MJE=0.500 CJC=14.8p VJC=0.300
+ MJC=0.300 TF=416p TR=71.8n EG=1.12 )


.MODEL FCX591 PNP IS =3.2E-14 BF =170 VAF=45 NF =0.977 IKF=1.25 ISE=7E-15
+NE =1.35 BR =50 VAR=50 NR =.986 IKR=0.15 ISC=0.9E-14 NC =1.08 RB =0.16
+RE =0.195 RC =0.185 CJE=104E-12 TF =0.7E-9 CJC=30.5E-12 TR =3E-9 VJC=0.395
+MJC=0.415
*
*$


.MODEL FCX593 PNP IS=2E-13 NF=1 BF=300 IKF=0.8 
+ VAF=44 ISE=1E-13 NE=1.4 RCO=4.5 GAMMA=5E-9 
+ NR=1 BR=20 IKR=0.2 VAR=10 ISC=2e-13 NC=1.25 
+ RB=0.15 RE=0.15 RC=0.2 QUASIMOD=1
+ CJC=36E-12 MJC=0.45 VJC=0.75 CJE=110E-12 
+ TF=0.8E-9 TR=70e-9 XTB=1.4
*
*$


*ZETEX FMMT551 Spice Model v1.0 Last Revised 8/8/05
    *
    .MODEL FMMT551 PNP IS =3.2E-14 BF =120 VAF=45 NF =0.977 IKF=1.25 ISE=7E-15
    +NE =1.35 BR =35 VAR=50 NR =.986 IKR=0.15 ISC=0.9E-14 NC =1.08 RB =0.16
    +RE =0.195 RC =0.185 CJE=104E-12 TF =0.7E-9 CJC=30.5E-12 TR =3E-9 VJC=0.395
    +MJC=0.415
    *
    *$
    *


*
.MODEL FMMT591 PNP IS =3.2E-14 BF =170 VAF=45 NF =0.977 IKF=1.25 ISE=7E-15
+NE =1.35 BR =50 VAR=50 NR =.986 IKR=0.15 ISC=0.9E-14 NC =1.08 RB =0.16
+RE =0.195 RC =0.185 CJE=104E-12 TF =0.7E-9 CJC=30.5E-12 TR =3E-9 VJC=0.395
+MJC=0.415
*
*$


*ZETEX FMMT593 Spice Model v2.0 Last Revised 24/2/05
    *
    .MODEL FMMT593 PNP IS =2E-13 NF =1 BF =300 IKF=0.8 
    +VAF=44 ISE=1E-13 NE =1.4 RCO=4.5 GAMMA=5E-9 
    +NR =1 BR =20 IKR=0.2 VAR=10 ISC=2e-13 NC =1.25 
    +RB =0.15 RE =0.15 RC =0.2 QUASIMOD=1
    +CJC=36E-12 MJC=0.45 VJC=0.75 CJE=110E-12 
    +TF =0.8E-9 TR =70e-9 XTB=1.4
    *
    *$
    *


*ZETEX FMMT722 Spice Model v1.0 Last Revised 15/12/93
    *
    .MODEL FMMT722 PNP IS =6.348E-13  BF =450 IKF =1.25 VAF =30.24 
    +              ISE=1.375E-13 NE =1.5 NR =1.00 BR =25 IKR=0.8 
    +              VAR=12.6 ISC=1E-13 NC =1.093 RB =0.081 RE =0.09
    +              RC =0.1 CJC=49.87E-12 MJC=0.494 VJC=0.7653 
    +              CJE=199E-12 MJE=0.5045 VJE=0.9617 TF =0.57E-9 
    +              TR =57E-9
    *
    *$
    *


*ZETEX FMMT723 Spice Model v1.0 Last Revised 15/12/93
    *
    .MODEL FMMT723 PNP IS =5.5E-13  BF =440 IKF =1 VAF =50.88 
    +              ISE=1.554E-13 NE =1.477 NR =1.03 BR =30 IKR=0.7 
    +              VAR=13.79 ISC=1.3E-12 NC =1.198 RB =1.5 RE =0.02
    +              RC =0.14 CJC=45.74E-12 MJC=0.4889 VJC=0.711 
    +              CJE=204.3E-12 MJE=0.5105 VJE=0.9711 TF =0.63E-9 
    +              TR =95E-9
    *
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=08FEB2011
*VERSION=1
*
.MODEL FMMTA56 PNP IS=2E-13 NF=1 BF=300 IKF=0.8 
+ VAF=44 ISE=1E-13 NE=1.4 RCO=4.5 GAMMA=5E-9 
+ NR=1 BR=20 IKR=0.2 VAR=10 ISC=2e-13 NC=1.25 
+ RB=0.15 RE=0.15 RC=0.2 QUASIMOD=1
+ CJC=36E-12 MJC=0.45 VJC=0.75 CJE=110E-12 
+ TF=0.8E-9 TR=70e-9 XTB=1.4
*
*$


.MODEL FZT591 PNP IS =3.2E-14 BF =170 VAF=45 NF =0.977 IKF=1.25 ISE=7E-15
+NE =1.35 BR =50 VAR=50 NR =.986 IKR=0.15 ISC=0.9E-14 NC =1.08 RB =0.16
+RE =0.195 RC =0.185 CJE=104E-12 TF =0.7E-9 CJC=30.5E-12 TR =3E-9 VJC=0.395
+MJC=0.415
*
*$


*ZETEX FZT751 Spice Model v1.0 Last Revised 23/1/91
    *
    .MODEL FZT751 PNP IS =2.715E-13 BF =170 VAF=70 NF =1.004 IKF=2.75 ISE=1E-13
    +NE =1.535 BR =23 VAR=40 NR =1.005 IKR=.55 ISC=5.15E-14 NC =1.13 RB =.07
    +RE =.065 RC =.085 CJE=360E-12 TF =.94E-9 CJC=90E-12 TR =60E-9 VJC=.705
    +MJC=.46
    *
    *$
    *


*ZETEX FZT753 Spice Model v1.0 Last Revised 18/3/97
    *
    .MODEL FZT753 PNP IS =3.2007E-13 NF =1.0041 BF =200 IKF=1.6 VAF=76
    +             ISE=8E-14 NE =1.57 NR =1.0008 BR =33 IKR=0.45 VAR=51 
    +             ISC=6E-14 NC =1.079 RB =0.087 RE =0.08 RC =0.07 
    +             CJC=80E-12 MJC=0.4896 VJC=0.7676 CJE=350E-12 
    +             TF =0.86E-9 TR =24E-9
    *
    *$
    *


*ZETEX FZT792A Spice Model v1.0 Last Revised 7/1/92
    *
    .MODEL FZT792A PNP IS=5.98255E-13 NF=1.0022 BF=525 IKF=1.25 VAF=30
    +ISE=1.45E-13 NE=1.54 NR=0.995 BR=75 IKR=0.4 VAR=34 ISC=1.58913E-13
    +NC=1.03943 RB=0.06 RE=0.059 RC=0.08 CJC=90E-12 MJC=0.5 VJC=0.71
    +CJE=286E-12 TF=0.75E-9 TR=93.75E-9
    *Note, The Model may be inaccurate for collector currents above 1.2A.
    *
    *$
    *


*ZETEX FZT951 Spice Model v1.0 Last Revised 14/3/97
    *
    .MODEL FZT951  PNP IS=1.3766E-12 NF=1.013 BF=187 IKF=5.0 VAF=66.3
    +ISE=1.4E-13 NE=1.41 NR=1.0099 BR=56 IKR=0.9 VAR=33 ISC=1.7E-12
    +NC=1.4 RB=0.029 RE=0.020 RC=0.0255 CJC=287E-12 MJC=0.4522 
    +VJC=0.4956 CJE=1.15E-9 TF=0.83E-9 TR=20E-9
    *
    *$
    *


*ZETEX FZT953 Spice Model v1.1 Last Revised 24/4/03
    *
    .MODEL FZT953  PNP IS=1.6649E-12 NF=1.0139 BF=220 IKF=4 VAF=55
    +ISE=6.2E-13 NE=1.62 NR=1.0107 BR=40 IKR=0.95 VAR=43 ISC=3E-12
    +NC=1.4 RB=0.032 RE=0.0295 RC=0.034 CJC=265E-12 MJC=0.5286
    +VJC=0.76 CJE=1.1E-9 TF=0.8E-9 TR=29E-9 XTB=1.4 NK=0.7
    +TRE1=.0025 TRB1=.0025 TRC1=.0025 
    *
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=21JUL2010
*VERSION=1
*
.MODEL MJD32C PNP IS=3.2007E-13 NF=1.0041 BF=200 IKF=1.6 VAF=76
+ ISE=8E-14 NE=1.57 NR=1.0008 BR=33 IKR=0.45 VAR=51 ISC=6E-14
+ NC=1.079 RB=0.087 RE=0.08 RC=0.07 CJC=80E-12 MJC=0.4896
+ VJC=0.7676 CJE=350E-12 TF=0.86E-9 TR=24E-9
*
*$


*SRC=MMBT2907A;DI_MMBT2907A;BJTs PNP; Si;  60.0V  0.600A  200MHz   Diodes Inc. Transistor 
.MODEL DI_MMBT2907A  PNP (IS=60.7f NF=1.00 BF=312 VAF=139 
+ IKF=0.219 ISE=26.0p NE=2.00 BR=4.00 NR=1.00 
+ VAR=20.0 IKR=0.540 RE=85.8m RB=0.343 RC=34.3m 
+ XTB=1.5 CJE=50.4p VJE=1.10 MJE=0.500 CJC=23.1p VJC=0.300 
+ MJC=0.300 TF=758p TR=123n EG=1.12 )


*SRC=MMBT2907AT;DI_MMBT2907AT;BJTs PNP; Si;  60.0V  0.500A  300MHz   Diodes Inc. BJTs 
.MODEL DI_MMBT2907AT  PNP (IS=50.0f NF=1.00 BF=410 VAF=139
+ IKF=0.182 ISE=16.4p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.450 RE=0.343 RB=1.37 RC=0.137
+ XTB=1.5 CJE=34.9p VJE=1.10 MJE=0.500 CJC=14.7p VJC=0.300
+ MJC=0.300 TF=484p TR=29.9n EG=1.12 )


*SRC=MMBTA55;DI_MMBTA55;BJTs PNP; Si;  60.0V  0.500A  163MHz   Diodes Inc. Transistor 
.MODEL DI_MMBTA55  PNP (IS=50.8f NF=1.00 BF=479 VAF=139 
+ IKF=91.1m ISE=9.99p NE=2.00 BR=4.00 NR=1.00 
+ VAR=16.0 IKR=0.225 RE=0.103 RB=0.412 RC=41.2m 
+ XTB=1.5 CJE=125p VJE=1.10 MJE=0.500 CJC=40.2p VJC=0.300 
+ MJC=0.300 TF=660p TR=149n EG=1.12 )


*SRC=MMBTA56;DI_MMBTA56;BJTs PNP; Si;  80.0V  0.500A  163MHz   Diodes Inc.
Transistor
.MODEL DI_MMBTA56  PNP (IS=50.8f NF=1.00 BF=479 VAF=161
+ IKF=91.1m ISE=9.99p NE=2.00 BR=4.00 NR=1.00
+ VAR=16.0 IKR=0.225 RE=0.103 RB=0.412 RC=41.2m
+ XTB=1.5 CJE=125p VJE=1.10 MJE=0.500 CJC=40.2p VJC=0.300
+ MJC=0.300 TF=660p TR=149n EG=1.12 )


*SRC=MMST2907A;DI_MMST2907A;BJTs PNP; Si;  60.0V  0.600A  275MHz   Diodes
Inc. BJTs
.MODEL DI_MMST2907A  PNP (IS=59.9f NF=1.00 BF=410 VAF=139
+ IKF=0.273 ISE=21.9p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.675 RE=0.344 RB=1.38 RC=0.138
+ XTB=1.5 CJE=30.2p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 MJC=0.300 
+ TF=513p TR=29.9n EG=1.12 )


*SRC=MMSTA55;DI_MMSTA55;BJTs PNP; Si;  60.0V  0.500A  70.0MHz   Diodes Inc.
BJTs
.MODEL DI_MMSTA55  PNP (IS=50.2f NF=1.00 BF=331 VAF=139
+ IKF=0.182 ISE=20.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=16.0 IKR=0.450 RE=0.133 RB=0.532 RC=53.2m
+ XTB=1.5 CJE=125p VJE=1.10 MJE=0.500 CJC=40.2p VJC=0.300 MJC=0.300 
+ TF=2.16n TR=350n EG=1.12 )


*SRC=MMSTA56;DI_MMSTA56;BJTs PNP; Si;  80.0V  0.500A  70.0MHz   Diodes Inc.
BJTs
.MODEL DI_MMSTA56  PNP (IS=50.2f NF=1.00 BF=331 VAF=161
+ IKF=0.182 ISE=20.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=16.0 IKR=0.450 RE=0.133 RB=0.532 RC=53.2m
+ XTB=1.5 CJE=125p VJE=1.10 MJE=0.500 CJC=40.2p VJC=0.300 MJC=0.300 
+ TF=2.16n TR=350n EG=1.12 )


*ZETEX ZTX551 Spice Model v1.0 Last Revised 6/1/03
    *
    .MODEL ZTX551 PNP IS =3.2E-14 BF =120 VAF=45 NF =0.977 IKF=1.25 ISE=7E-15
    +NE =1.35 BR =35 VAR=50 NR =.986 IKR=0.15 ISC=0.9E-14 NC =1.08 RB =0.16
    +RE =0.195 RC =0.185 CJE=104E-12 TF =0.7E-9 CJC=30.5E-12 TR =3E-9 VJC=0.395
    +MJC=0.415
    *
    *$
    *


*ZETEX ZTX553 Spice Model v1.0 Last Revised 16/12/05
    *
    .MODEL ZTX553 PNP IS =2E-13 NF =1 BF =200 IKF=0.8 
    +VAF=44 ISE=1E-13 NE =1.4 RCO=4.5 GAMMA=5E-9 
    +NR =1 BR =15 IKR=0.2 VAR=10 ISC=2e-13 NC =1.25 
    +RB =0.15 RE =0.15 RC =0.2 QUASIMOD=1
    +CJC=36E-12 MJC=0.45 VJC=0.75 CJE=110E-12 
    +TF =0.8E-9 TR =70e-9 XTB=1.4
    *
    *$
    *


*ZETEX ZTX751 Spice Model v1.0 Last Revised 23/1/91
    *
    .MODEL ZTX751 PNP IS =2.715E-13 BF =170 VAF=70 NF =1.004 IKF=2.75 ISE=1E-13
    +NE =1.535 BR =23 VAR=40 NR =1.005 IKR=.55 ISC=5.15E-14 NC =1.13 RB =.07
    +RE =.065 RC =.085 CJE=360E-12 TF =.94E-9 CJC=90E-12 TR =60E-9 VJC=.705
    +MJC=.46
    *
    *$
    *


*ZETEX ZTX753 Spice Model v1.0 Last Revised 24/5/93
    *
    .MODEL ZTX753 PNP IS =3.2007E-13 NF =1.0041 BF =200 IKF=1.6 VAF=76
    +             ISE=8E-14 NE =1.57 NR =1.0008 BR =33 IKR=0.45 VAR=51 
    +             ISC=6E-14 NC =1.079 RB =0.087 RE =0.08 RC =0.07 
    +             CJC=80E-12 MJC=0.4896 VJC=0.7676 CJE=350E-12 
    +             TF =0.86E-9 TR =24E-9
    *
    *$
    *


*ZETEX ZTX792A Spice Model v1.0 Last Revised 7/1/92
    *
    .MODEL ZTX792A PNP IS=5.98255E-13 NF=1.0022 BF=525 IKF=1.25 VAF=30
    +ISE=1.45E-13 NE=1.54 NR=0.995 BR=75 IKR=0.4 VAR=34 ISC=1.58913E-13
    +NC=1.03943 RB=0.06 RE=0.059 RC=0.08 CJC=90E-12 MJC=0.5 VJC=0.71
    +CJE=286E-12 TF=0.75E-9 TR=93.75E-9
    *Note, The Model may be inaccurate for collector currents above 1.2A.
    *
    *$
    *


*ZETEX ZTX951 Spice Model v1.0 Last Revised 27/5/92
    *
    .MODEL ZTX951  PNP IS=1.3766E-12 NF=1.013 BF=187 IKF=5.0 VAF=66.3
    +ISE=1.4E-13 NE=1.41 NR=1.0099 BR=56 IKR=0.9 VAR=33 ISC=1.7E-12
    +NC=1.4 RB=0.029 RE=0.020 RC=0.0255 CJC=287E-12 MJC=0.4522 
    +VJC=0.4956 CJE=1.15E-9 TF=0.83E-9 TR=20E-9
    *
    *$
    *


*ZETEX ZTX953 Spice Model v1.1 Last Revised 24/4/03
    *
    .MODEL ZTX953  PNP IS=1.6649E-12 NF=1.0139 BF=220 IKF=4 VAF=55
    +ISE=6.2E-13 NE=1.62 NR=1.0107 BR=40 IKR=0.95 VAR=43 ISC=3E-12
    +NC=1.4 RB=0.032 RE=0.0295 RC=0.034 CJC=265E-12 MJC=0.5286
    +VJC=0.76 CJE=1.1E-9 TF=0.8E-9 TR=29E-9 XTB=1.4 NK=0.7
    +TRE1=.0025 TRB1=.0025 TRC1=.0025 
    *
    *$
    *


*ZETEX ZX5T951G Spice Model v2.0 Last revision 09/01/07
    *
    .MODEL ZX5T951G PNP IS=5.3E-13 NF=1.0 BF=220 IKF=11 VAF=84 ISE=5E-14 NE=1.4
    +NR=1 BR=45 VAR=8.9 ISC=5E-14 IKR=5 NC=1.07 RB=0.27 RE=0.015 RC=0.022
    +CJC=170E-12 MJC=0.4 VJC=0.55 CJE=750E-12 MJE=0.4 VJE=0.68 TF=0.5E-9
    +TR=2.2E-8 XTB=1.4 TRB1=.005 TRE1=.005 QUASIMOD=1 RCO=0.22 GAMMA=5e-10
    *
    *$
    *


*ZETEX ZX5T953G Spice Model v1.0 Last revision 13/12/06
    *
    .MODEL ZX5T953G PNP IS=1E-13 NF=1 BF=200 VAF=44 ISE=1.3E-13 IKF=8 NE=1.6
    +NR=1 BR=22 VAR=16 ISC=1.3E-13 IKR=4 NC=1.4 RC=0.017 RB=0.13 RE=0.019
    +CJC=136E-12 MJC=0.41 VJC=0.50 CJE=570E-12 MJE=0.45 VJE=0.86 TF=0.7E-9
    +TR=45E-9 XTB=1.5 QUASIMOD=1 RCO=0.7 GAMMA=5E-10
    *
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=23FEB2011
*VERSION=1
*
.MODEL ZXT951K PNP IS=1.3766E-12 NF=1.013 BF=187 IKF=5.0 VAF=66.3
+ ISE=1.4E-13 NE=1.41 NR=1.0099 BR=56 IKR=0.9 VAR=33 ISC=1.7E-12
+ NC=1.4 RB=0.029 RE=0.020 RC=0.0255 CJC=287E-12 MJC=0.4522 
+ VJC=0.4956 CJE=1.15E-9 TF=0.83E-9 TR=20E-9
*
*$


*ZETEX ZXT953K Spice Model v1.0 Last Revised 16/01/07
    *
    .MODEL ZXT953K  PNP IS=1.6649E-12 NF=1.0139 BF=220 IKF=4 VAF=55
    +ISE=6.2E-13 NE=1.62 NR=1.0107 BR=40 IKR=0.95 VAR=43 ISC=3E-12
    +NC=1.4 RB=0.032 RE=0.0295 RC=0.034 CJC=265E-12 MJC=0.5286
    +VJC=0.76 CJE=1.1E-9 TF=0.8E-9 TR=29E-9 XTB=1.4 NK=0.7
    +TRE1=.0025 TRB1=.0025 TRC1=.0025 
    *
    *$
    *


*ZETEX ZXTP19060CFF Spice Model v1.0 Last Revised 11/09/07
    *
    .MODEL ZXTP19060CFF PNP IS=6E-13 NF=1 BF=385 VAF=55.2 ISE=1.3E-13 IKF=3.8
    +NE=1.45 BR=43 VAR=10.4 ISC=1.3E-13 NC=1.18 RC=0.0045 RB=0.15 RE=0.009
    +CJC=98E-12 MJC=0.42 VJC=0.66 CJE=360E-12 MJE=0.5 VJE=0.95 TF=0.53E-9
    +TR=21E-9 XTB=1.4 QUASIMOD=1 RCO=0.7 GAMMA=7.5E-10 TRC1=.003 TRB1=.003
    +TRE1=.003
    *
    *$
    *


.MODEL ZXTP19060CG PNP IS=6E-13 NF=1 BF=385 VAF=55.2 ISE=1.3E-13 IKF=3.8
+NE=1.45 BR=43 VAR=10.4 ISC=1.3E-13 NC=1.18 RC=0.0045 RB=0.15 RE=0.009
+CJC=98E-12 MJC=0.42 VJC=0.66 CJE=360E-12 MJE=0.5 VJE=0.95 TF=0.53E-9
+TR=21E-9 XTB=1.4 QUASIMOD=1 RCO=0.7 GAMMA=7.5E-10 TRC1=.003 TRB1=.003
+TRE1=.003
*
*$


.MODEL ZXTP19060CZ PNP IS=6E-13 NF=1 BF=385 VAF=55.2 ISE=1.3E-13 IKF=3.8
+NE=1.45 BR=43 VAR=10.4 ISC=1.3E-13 NC=1.18 RC=0.0045 RB=0.15 RE=0.009
+CJC=98E-12 MJC=0.42 VJC=0.66 CJE=360E-12 MJE=0.5 VJE=0.95 TF=0.53E-9
+TR=21E-9 XTB=1.4 QUASIMOD=1 RCO=0.7 GAMMA=7.5E-10 TRC1=.003 TRB1=.003
+TRE1=.003
*
*$


.MODEL ZXTP19100CFF PNP IS=5E-13 NF=1 BF=370 VAF=70 ISE=1E-13 IKF=3.5
+ NE=1.45 BR=16 VAR=6 ISC=1.8E-13 NC=1.09 RC=0.009 RB=0.2 RE=0.014
+ QUASIMOD=1 RCO=2.25 GAMMA=1.0E-8 CJC=80E-12 MJC=0.47 VJC=0.75
+ CJE=360E-12 MJE=0.51 VJE=1 TF=0.85E-9 TR=1.15E-7 TRC1=0.003 TRB1=0.003
+ TRE1=0.003 XTB=1.4
*
*$


.MODEL ZXTP19100CG PNP IS=5E-13 NF=1 BF=370 VAF=70 ISE=1E-13 IKF=3.5
+ NE=1.45 BR=16 VAR=6 ISC=1.8E-13 NC=1.09 RC=0.009 RB=0.2 RE=0.014
+ QUASIMOD=1 RCO=2.25 GAMMA=1.0E-8 CJC=80E-12 MJC=0.47 VJC=0.75
+ CJE=360E-12 MJE=0.51 VJE=1 TF=0.85E-9 TR=1.15E-7 TRC1=0.003 TRB1=0.003
+ TRE1=0.003 XTB=1.4
*
*$


.MODEL ZXTP19100CZ PNP IS=5E-13 NF=1 BF=370 VAF=70 ISE=1E-13 IKF=3.5
+ NE=1.45 BR=16 VAR=6 ISC=1.8E-13 NC=1.09 RC=0.009 RB=0.2 RE=0.014
+ QUASIMOD=1 RCO=2.25 GAMMA=1.0E-8 CJC=80E-12 MJC=0.47 VJC=0.75
+ CJE=360E-12 MJE=0.51 VJE=1 TF=0.85E-9 TR=1.15E-7 TRC1=0.003 TRB1=0.003
+ TRE1=0.003 XTB=1.4
*
*$


*ZETEX ZXTP2012A Spice Model v2.0 Last revision 09/01/07
    *
    .MODEL ZXTP2012A PNP IS=5.3E-13 NF=1.0 BF=220 IKF=11 VAF=84 ISE=5E-14 NE=1.4
    +NR=1 BR=45 VAR=8.9 ISC=5E-14 IKR=5 NC=1.07 RB=0.27 RE=0.015 RC=0.022
    +CJC=170E-12 MJC=0.4 VJC=0.55 CJE=750E-12 MJE=0.4 VJE=0.68 TF=0.5E-9
    +TR=2.2E-8 XTB=1.4 TRB1=.005 TRE1=.005 QUASIMOD=1 RCO=0.22 GAMMA=5e-10
    *
    *$
    *


*ZETEX ZXTP2012G Spice Model v2.0 Last revision 09/01/07
    *
    .MODEL ZXTP2012G PNP IS=5.3E-13 NF=1.0 BF=220 IKF=11 VAF=84 ISE=5E-14 NE=1.4
    +NR=1 BR=45 VAR=8.9 ISC=5E-14 IKR=5 NC=1.07 RB=0.27 RE=0.015 RC=0.022
    +CJC=170E-12 MJC=0.4 VJC=0.55 CJE=750E-12 MJE=0.4 VJE=0.68 TF=0.5E-9
    +TR=2.2E-8 XTB=1.4 TRB1=.005 TRE1=.005 QUASIMOD=1 RCO=0.22 GAMMA=5e-10
    *
    *$
    *


*ZETEX ZXTP2012Z Spice Model v2.0 Last revision 09/01/07
    *
    .MODEL ZXTP2012Z PNP IS=5.3E-13 NF=1.0 BF=220 IKF=11 VAF=84 ISE=5E-14 NE=1.4
    +NR=1 BR=45 VAR=8.9 ISC=5E-14 IKR=5 NC=1.07 RB=0.27 RE=0.015 RC=0.022
    +CJC=170E-12 MJC=0.4 VJC=0.55 CJE=750E-12 MJE=0.4 VJE=0.68 TF=0.5E-9
    +TR=2.2E-8 XTB=1.4 TRB1=.005 TRE1=.005 QUASIMOD=1 RCO=0.22 GAMMA=5e-10
    *
    *$
    *


*ZETEX ZXTP2013G Spice Model v1.0 Last revision 22/12/06
    *
    .MODEL ZXTP2013G PNP IS=1E-13 NF=1 BF=200 VAF=44 ISE=1.3E-13 IKF=8 NE=1.6
    +NR=1 BR=22 VAR=16 ISC=1.3E-13 IKR=4 NC=1.4 RC=0.017 RB=0.13 RE=0.019
    +CJC=136E-12 MJC=0.41 VJC=0.50 CJE=570E-12 MJE=0.45 VJE=0.86 TF=0.7E-9
    +TR=45E-9 XTB=1.5 QUASIMOD=1 RCO=0.7 GAMMA=5E-10
    *
    *$
    *


*ZETEX ZXTP2013Z Spice Model v1.0 Last revision 22/12/06
    *
    .MODEL ZXTP2013Z PNP IS=1E-13 NF=1 BF=200 VAF=44 ISE=1.3E-13 IKF=8 NE=1.6
    +NR=1 BR=22 VAR=16 ISC=1.3E-13 IKR=4 NC=1.4 RC=0.017 RB=0.13 RE=0.019
    +CJC=136E-12 MJC=0.41 VJC=0.50 CJE=570E-12 MJE=0.45 VJE=0.86 TF=0.7E-9
    +TR=45E-9 XTB=1.5 QUASIMOD=1 RCO=0.7 GAMMA=5E-10
    *
    *$
    *


.MODEL ZXTP2027F PNP IS=6.3E-13 NF=1 BF=270 VAF=22 ISE=1E-13 IKF=7
+ NE=1.4 BR=120 VAR=8 ISC=1.3E-13 NC=1.5 RC=0.009 RB=0.15 RE=0.013
+ CJC=180E-12 MJC=0.36 VJC=0.55 CJE=520E-12 MJE=0.35 VJE=0.8 QUASIMOD=1
+ RCO=0.32 GAMMA=4E-10 TF=0.72E-9 TR=4.1E-9 XTB=1.4
*
*$


*ZETEX ZXTP2029F Spice Model v1.0 Last Revised 15/03/06
    *
    .MODEL ZXTP2029F PNP IS=470E-15 NF=1 BF=270 VAF=72 ISE=100E-15 
    +IKF=18 NE=1.46 +NR=1 BR=22 VAR=16 ISC=470E-15 IKR=1 NC=1.37 RC=0.01 
    +RB=0.15 RE=0.02 CJC=130E-12 MJC=0.43 VJC=0.68 CJE=570E-12 MJE=0.4 
    +VJE=0.68 TF=0.55E-9 TR=25E-9 XTB=1.4 QUASIMOD=1 RCO=1.5 GAMMA=2E-8 
    *
    *$
    *


*ZETEX ZXTP2039F Spice Model v1.0 Last Revised 8/2/06
    *
    .MODEL ZXTP2039F PNP IS =3.2E-14 BF =170 VAF=45 NF =0.977 IKF=1.25 ISE=7E-15
    +NE =1.35 BR =50 VAR=50 NR =.986 IKR=0.15 ISC=0.9E-14 NC =1.08 RB =0.16
    +RE =0.195 RC =0.185 CJE=104E-12 TF =0.7E-9 CJC=30.5E-12 TR =3E-9 VJC=0.395
    +MJC=0.415
    *
    *$
    *


*ZETEX ZXTP25060BFH Spice Model v2.0 Last revision 29/05/07
    *
    .MODEL ZXTP25060BFH PNP IS=1.5E-13 BF=230 NF=1 VAF=72 IKF=3.5 ISE=8E-14
    +NE=1.55 BR=15 NR=1 VAR=8 IKR=1 ISC=8e-14 NC=1.2 RE=0.014 RB=0.11 RC=0.0103
    +CJE=239E-12 VJE=0.98 MJE=0.495 CJC=59E-12 VJC=0.51 MJC=0.33 TF=5E-10
    +TR=34e-9 RCO=0.85 GAMMA=8.5E-10 QUASIMOD=1 XTB=1.5 TRE1=.008 TRB1=.008
    +TRC1=.008
    *
    *$
    *


*ZETEX ZXTP25100BFH Spice Model v1.0 Last Revised 15/10/07
    *
    .MODEL ZXTP25100BFH PNP IS=2E-13 NF=1 BF=200 VAF=121 ISE=1.6E-14
    + IKF=6 NE=1.65 BR=17 VAR=16 ISC=1.4E-13 NC=1.1 IKR=1 RC=0.015 RB=0.2
    + RE=0.012 QUASIMOD=1 RCO=3.8 GAMMA=2.5E-8 CJC=49E-12 MJC=0.34 VJC=0.5
    + CJE=231E-12 MJE=0.46 VJE=0.9 TF=0.6E-9 TR=6.5E-8 TRC1=0.005 TRB1=0.005
    + TRE1=0.005 XTB=1.4
    *
    *$
    *


.MODEL ZXTP25100CFH PNP IS=2E-13 NF=1 BF=375 VAF=75 ISE=4E-14 IKF=1.4
+ NE=1.65 BR=15 VAR=9 ISC=9E-14 NC=1.2 IKR=0.45 RC=0.012 RB=0.3
+ RE=0.016 QUASIMOD=1 VO=7 RCO=3.4 GAMMA=0.4E-8 CJC=45E-12 MJC=0.38
+ VJC=0.52 CJE=190E-12 MJE=0.46 VJE=0.85 TF=3.9E-10 TR=5.3E-8 TRC1=0.004
+ TRB1=0.004 TRE1=0.004 XTB=1.4
*
*$
*


.MODEL ZXTP25100CZ PNP IS=2E-13 NF=1 BF=375 VAF=75 ISE=4E-14 IKF=1.4
+ NE=1.65 BR=15 VAR=9 ISC=9E-14 NC=1.2 IKR=0.45 RC=0.012 RB=0.3
+ RE=0.016 QUASIMOD=1 VO=7 RCO=3.4 GAMMA=0.4E-8 CJC=45E-12 MJC=0.38
+ VJC=0.52 CJE=190E-12 MJE=0.46 VJE=0.85 TF=3.9E-10 TR=5.3E-8 TRC1=0.004
+ TRB1=0.004 TRE1=0.004 XTB=1.4
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=27JAN2011
*VERSION=1
*
.MODEL ZXTP722MA PNP IS =6.348E-13  BF =450 IKF =1.25 VAF =30.24 
+ ISE=1.375E-13 NE =1.5 NR =1.00 BR =25 IKR=0.8 
+ VAR=12.6 ISC=1E-13 NC =1.093 RB =0.081 RE =0.09
+ RC =0.1 CJC=49.87E-12 MJC=0.494 VJC=0.7653 
+ CJE=199E-12 MJE=0.5045 VJE=0.9617 TF =0.57E-9 
+ TR =57E-9
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=9-Sep-2014
*VERSION=1
*

.MODEL DSS8110Y NPN IS=1.2e-13 NF=.975 ISE=50e-15 NE=1.35 BF=200
+ ISC=3.5e-13 NC=1.25 BR=3 NR=.99 RE=0.029  VAF=30 IKF=4
+ RB=0.33 RC=0.01 CJE=185e-12 VJE=0.7 MJE=0.345 CJC=25e-12 VJC=0.5
+ MJC=0.345 TF=1.5e-9 TR=48e-9 QUASIMOD=1 RCO=.05 GAMMA=1.3e-9 NK=.7 
+ XTB=1.3 EG=1.2 



*
*                (c)  2014 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*ZETEX  ZXTN2010G Spice Model v1.0 Last revision 24/03/2006
    *
    .MODEL ZXTN2010G NPN IS =1.0085E-12 NF =1.0001 BF =210 IKF=4 VAF=158
    +ISE=7E-13 NE =1.38 NR =0.9988 BR =90 IKR=3 VAR=46 ISC=4.6515E-13
    +NC =1.334 RB =0.2 RE =0.018 RC =0.016 CJC=93E-12 MJC=0.4348
    +VJC=0.6477 CJE=0.63E-9 TF =0.75E-9  TR =20E-9 XTB=1.5
    *
    *$
    *


*DIODES_INC_SPICE_MODEL BCX5516
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_IM
*DATE=24-APR-2013
*VERSION=1

.MODEL BCX5516 NPN IS =6E-14 NF =0.99 BF =250 IKF=0.9
+NK=0.7 VAF=270 ISE=1E-14 NE =1.2 NR =0.98 BR =30 IKR=0.5
+VAR=27 ISC=1.2e-13 NC =1.2 RB =0.2 RE =0.08 RC =0.08 RCO=5
+GAMMA=5E-9 CJC=15.9E-12 MJC=0.4 VJC=0.51 CJE=108E-12 
+MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4 QUASIMOD=1

*                (c)  2013 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*ZETEX BCX56 Spice Model v2.0 Last Revised 24/2/05
    *
    .MODEL BCX56 NPN IS =6E-14 NF =0.99 BF =250 IKF=0.9
    +NK=0.7 VAF=270 ISE=1E-14 NE =1.2 NR =0.98 BR =30 IKR=0.5
    +VAR=27 ISC=1.2e-13 NC =1.2 RB =0.2 RE =0.08 RC =0.08 RCO=5
    +GAMMA=5E-9 CJC=15.9E-12 MJC=0.4 VJC=0.51 CJE=108E-12 
    +MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4 QUASIMOD=1
    *
    *$
    *


*ZETEX BCX5610 Spice Model v2.0 Last Revised 24/2/05
    *
    .MODEL BCX5610 NPN IS =6E-14 NF =0.99 BF =250 IKF=0.9
    +NK=0.7 VAF=270 ISE=1E-14 NE =1.2 NR =0.98 BR =30 IKR=0.5
    +VAR=27 ISC=1.2e-13 NC =1.2 RB =0.2 RE =0.08 RC =0.08 RCO=5
    +GAMMA=5E-9 CJC=15.9E-12 MJC=0.4 VJC=0.51 CJE=108E-12 
    +MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4 QUASIMOD=1
    *
    *$
    *


*DIODES_INC_SPICE_MODEL BCP5516
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_IM
*DATE=24-APR-2013
*VERSION=1

.MODEL BCP5516 NPN IS =6E-14 NF =0.99 BF =250 IKF=0.9
+NK=0.7 VAF=270 ISE=1E-14 NE =1.2 NR =0.98 BR =30 IKR=0.5
+VAR=27 ISC=1.2e-13 NC =1.2 RB =0.2 RE =0.08 RC =0.08 RCO=5
+GAMMA=5E-9 CJC=15.9E-12 MJC=0.4 VJC=0.51 CJE=108E-12 
+MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4 QUASIMOD=1

*                (c)  2013 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*ZETEX BCP5610 Spice Model v2.0 Last Revised 24/2/05
    *
    .MODEL BCP5610 NPN IS =6E-14 NF =0.99 BF =250 IKF=0.9
    +NK=0.7 VAF=270 ISE=1E-14 NE =1.2 NR =0.98 BR =30 IKR=0.5
    +VAR=27 ISC=1.2e-13 NC =1.2 RB =0.2 RE =0.08 RC =0.08 RCO=5
    +GAMMA=5E-9 CJC=15.9E-12 MJC=0.4 VJC=0.51 CJE=108E-12 
    +MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4 QUASIMOD=1
    *
    *$
    *


*ZETEX BCP5616 Spice Model v2.0 Last Revised 24/2/05
    *
    .MODEL BCP5616 NPN IS =6E-14 NF =0.99 BF =250 IKF=0.9
    +NK=0.7 VAF=270 ISE=1E-14 NE =1.2 NR =0.98 BR =30 IKR=0.5
    +VAR=27 ISC=1.2e-13 NC =1.2 RB =0.2 RE =0.08 RC =0.08 RCO=5
    +GAMMA=5E-9 CJC=15.9E-12 MJC=0.4 VJC=0.51 CJE=108E-12 
    +MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4 QUASIMOD=1
    *
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_IM
*SIMULATOR=PSPICE
*DATE=04-Jun-2014
*VERSION=1
*

.MODEL DXT2012P5 PNP IS=5.3E-13 NF=1.0 BF=220 IKF=11 VAF=84 ISE=5E-14 NE=1.4
+NR=1 BR=45 VAR=8.9 ISC=5E-14 IKR=5 NC=1.07 RB=0.27 RE=0.015 RC=0.022
+CJC=170E-12 MJC=0.4 VJC=0.55 CJE=750E-12 MJE=0.4 VJE=0.68 TF=0.5E-9
+TR=2.2E-8 XTB=1.4 TRB1=.005 TRE1=.005 QUASIMOD=1 RCO=0.22 GAMMA=5e-10


*
*                (c)  2014 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*ZETEX ZXTN19060CFF Spice Model v1.0 Last Revised 28/08/07
    *
    .MODEL ZXTN19060CFF NPN IS=6E-13 NF=1 BF=375 IKF=9 VAF=176 ISE=7E-14 NE=1.42
    +NR=1 BR=65 IKR=.12 VAR=23.3 ISC=3E-13 NC=1.27 RB=0.17 RE=0.007 RC=0.005
    +CJC=62E-12 MJC=0.38 VJC=0.51 CJE=379E-12 MJE=0.38 VJE=0.8 TF=10E-10
    +TR=2.5E-8 XTB=1.4 TRC1=.01 TRB1=.01 TRE1=.01 QUASIMOD=1 RCO=1.1
    +GAMMA=1.6E-8
    *
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=10-Dec-2013
*VERSION=1
*

.MODEL DSS4160T NPN IS=6e-13 NF=1 ISE=30e-15 NE=1.35 BF=400
+ VAF=28 IKF=8.5 ISC=2e-13 NC=1.2 BR=15 NR=1 VAR=5.7 IKR=0.6 RE=0.029
+ RB=0.33 RC=0.01 CJE=160e-12 VJE=0.55 MJE=0.36 CJC=30e-12 VJC=0.5
+ MJC=0.35 TF=1.5e-9 TR=48e-9  QUASIMOD=1 RCO=.6 GAMMA=1.3e-9 NK=.7
+ XTB=1.4 TRE1=0.004 TRB1=0.003 TRC1=0.004


*
*                (c)  2013 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_IM
*SIMULATOR=PSPICE
*DATE=10-Dec-2014
*VERSION=1
*

.MODEL DSS5160T PNP IS=2.2e-13 NF=1 ISE=8e-14 NE=1.49 BF=300
+ VAF=51 IKF=2.6 ISC=8e-14 NC=1.2 BR=24 VAR=15 IKR=0.75 RE=33e-3
+ RB=1000e-3 RC=112e-3 CJE=168e-12 VJE=0.8 MJE=0.45 CJC=49e-12
+ VJC=0.7 MJC=0.47 TF=4e-10 TR=21e-9 XTB=1.6 QUASIMOD=1
+ RCO=1.4 GAMMA=15e-10


*
*                (c)  2014 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*DIODES_INC_SPICE_MODEL BC846BLP4
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_IM
*DATE=27Mar2013
*VERSION=1

.MODEL BC846BLP4  NPN (IS=6E-15 NF=.99 BF=350 ISE=400E-18 NE=1.15 BR=1.8 NR=.97 NC=1.1 ISC=10E-15
+ RE=0.15 RB=4 RC=0.2 CJE=9p VJE=.7 MJE=0.3 CJC=3.146p VJC=0.500 MJC=0.2200 VAF=40 IKF=48m VAR=24.0 IKR=90.0m)



*                (c)  2013 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=10-Dec-2013
*VERSION=1
*

.MODEL DSS4160DS NPN IS=6e-13 NF=1 ISE=30e-15 NE=1.35 BF=400
+ VAF=28 IKF=8.5 ISC=2e-13 NC=1.2 BR=15 NR=1 VAR=5.7 IKR=0.6 RE=0.029
+ RB=0.33 RC=0.01 CJE=160e-12 VJE=0.55 MJE=0.36 CJC=30e-12 VJC=0.5
+ MJC=0.35 TF=1.5e-9 TR=48e-9  QUASIMOD=1 RCO=.6 GAMMA=1.3e-9 NK=.7
+ XTB=1.4 TRE1=0.004 TRB1=0.003 TRC1=0.004


*
*                (c)  2013 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*SRC=DXT751;DI_DXT751;BJTs PNP; Si;  60.0V  3.00A  145MHz    
.MODEL DI_DXT751  PNP (IS=8.12f NF=1.00 BF=171 VAF=139
+ IKF=2.97 ISE=16.9f NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=4.50 RE=27.3m RB=0.109 RC=10.9m
+ XTB=1.5 CJE=421p VJE=1.10 MJE=0.500 CJC=79.3p VJC=0.300
+ MJC=0.300 TF=719p TR=71.5n EG=1.12 )


*ZETEX BCP56 Spice Model v2.0 Last Revised 24/2/05
    *
    .MODEL BCP56 NPN IS =6E-14 NF =0.99 BF =250 IKF=0.9
    +NK=0.7 VAF=270 ISE=1E-14 NE =1.2 NR =0.98 BR =30 IKR=0.5
    +VAR=27 ISC=1.2e-13 NC =1.2 RB =0.2 RE =0.08 RC =0.08 RCO=5
    +GAMMA=5E-9 CJC=15.9E-12 MJC=0.4 VJC=0.51 CJE=108E-12 
    +MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4 QUASIMOD=1
    *
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=08FEB2011
*VERSION=1
*
.MODEL BCX5316 PNP IS=2E-13 NF=1 BF=300 IKF=0.8 
+ VAF=44 ISE=1E-13 NE=1.4 RCO=4.5 GAMMA=5E-9 
+ NR=1 BR=20 IKR=0.2 VAR=10 ISC=2e-13 NC=1.25 
+ RB=0.15 RE=0.15 RC=0.2 QUASIMOD=1
+ CJC=36E-12 MJC=0.45 VJC=0.75 CJE=110E-12 
+ TF=0.8E-9 TR=70e-9 XTB=1.4
*
*$


*ZETEX FMMT634 Spice Model v1.0 Last Revised 17/10/97 
    *
    .SUBCKT FMMT634 1 2 3
    *               C B E
    Q1 5 2 4 SUB634
    Q2 5 4 3 SUB634 4.45
    R1 1 5 .27
    *
    .MODEL SUB634 NPN IS=4.5E-14 ISE=1E-14 NF =1 NE =1.45 BF =250 IKF=.16 
    +RE=.09 RB=1 BR =12 IKR=.15  VAF=240 CJE=65E-12 CJC=7E-12
    +VJC=.85 MJC=.45 TF =.95E-9 TR =300E-9 
    .ENDS FMMT634
    *
    *$
    *


*ZETEX BCX5616 Spice Model v2.0 Last Revised 24/2/05
    *
    .MODEL BCX5616 NPN IS =6E-14 NF =0.99 BF =250 IKF=0.9
    +NK=0.7 VAF=270 ISE=1E-14 NE =1.2 NR =0.98 BR =30 IKR=0.5
    +VAR=27 ISC=1.2e-13 NC =1.2 RB =0.2 RE =0.08 RC =0.08 RCO=5
    +GAMMA=5E-9 CJC=15.9E-12 MJC=0.4 VJC=0.51 CJE=108E-12 
    +MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4 QUASIMOD=1
    *
    *$
    *


*

*DIODES_INC_SPICE_MODEL

*ORIGIN=DZSL_DPG_SU

*SIMULATOR=PSPICE

*DATE=10-Dec-2015

*VERSION=1

*



.MODEL DSS4160FDB NPN IS=6e-13 NF=1 ISE=30e-15 NE=1.35 BF=400

+ VAF=28 IKF=8.5 ISC=2e-13 NC=1.2 BR=15 NR=1 VAR=5.7 IKR=0.6 RE=0.029

+ RB=0.33 RC=0.01 CJE=160e-12 VJE=0.55 MJE=0.36 CJC=30e-12 VJC=0.5

+ MJC=0.35 TF=1.5e-9 TR=48e-9  QUASIMOD=1 RCO=.6 GAMMA=1.3e-9 NK=.7

+ XTB=1.4 TRE1=0.004 TRB1=0.003 TRC1=0.004





*
*                (c)  2015 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=31May2016
*VERSION=1-Q
*
.MODEL MJD31CQ NPN (IS=3.8206E-13 NF=1.0025 BF=250 IKF=1.15 VAF=154
+ ISE=1.035E-13 NE=1.3642 NR=1.0012 BR=50 IKR=0.42 VAR=38 ISC=7E-13
+ NC=1.19 RB=0.04 RE=0.0875 RC=0.06 CJC=45.5E-12 MJC=0.4534
+ VJC=0.5774 CJE=278E-12 TF=0.78E-9 TR=30E-9)

*                (c)  2016 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=31May2016
*VERSION=1-Q
*
.MODEL MJD32CQ PNP (IS=3.2007E-13 NF=1.0041 BF=200 IKF=1.6 VAF=76
+ ISE=8E-14 NE=1.57 NR=1.0008 BR=33 IKR=0.45 VAR=51 ISC=6E-14
+ NC=1.079 RB=0.087 RE=0.08 RC=0.07 CJC=80E-12 MJC=0.4896
+ VJC=0.7676 CJE=350E-12 TF=0.86E-9 TR=24E-9)

*                (c)  2016 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=31May2016
*VERSION=1-Q
*
.MODEL MJD31CUQ NPN (IS=3.8206E-13 NF=1.0025 BF=250 IKF=1.15 VAF=154
+ ISE=1.035E-13 NE=1.3642 NR=1.0012 BR=50 IKR=0.42 VAR=38 ISC=7E-13
+ NC=1.19 RB=0.04 RE=0.0875 RC=0.06 CJC=45.5E-12 MJC=0.4534
+ VJC=0.5774 CJE=278E-12 TF=0.78E-9 TR=30E-9)

*                (c)  2016 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL



*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=31May2016
*VERSION=1-Q
*
.MODEL MJD32CUQ PNP (IS=3.2007E-13 NF=1.0041 BF=200 IKF=1.6 VAF=76
+ ISE=8E-14 NE=1.57 NR=1.0008 BR=33 IKR=0.45 VAR=51 ISC=6E-14
+ NC=1.079 RB=0.087 RE=0.08 RC=0.07 CJC=80E-12 MJC=0.4896
+ VJC=0.7676 CJE=350E-12 TF=0.86E-9 TR=24E-9)

*                (c)  2016 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=23FEB2011
*VERSION=1
*
.MODEL ZXT849K NPN IS =5.8591E-13 NF =0.9919 BF =230 IKF=18 VAF=90
+ ISE=2.0067E-13 NE =1.4 NR =0.9908 BR =180 IKR=6.8 
+ VAR=20 ISC=5.3E-13 NC =1.46 RB =0.023 RE =0.0223 
+ RC =0.015 CJC=200E-12 MJC=0.3006 VJC=0.3532 
+ CJE=1.21E-9 TF =1.07E-9 TR =9.3E-9
*
*$


*ZETEX ZXTN2007G Spice Model v1.0 Last revision 24/03/06
    *
    .MODEL ZXTN2007G  NPN IS=1.5E-12 NF=1 BF=210 IKF=8 VAF=100 ISE=7.5E-13 
    +NE=1.39 NR=1 BR=120 IKR=5 VAR=25 ISC=9E-13 NC=1.37 RC=0.005 TRC1=3e-3 
    +RB=0.3 TRB1=6e-3 RE=0.024 TRE1=3e-3 CJC=110E-12 MJC=0.44 VJC=0.65 CJE=650E-12
    +TF=0.8E-9 TR=9E-9 XTB=1.4 
    *
    *$
    *


*ZETEX ZXTN2007Z Spice Model v1.0 Last revision 24/03/06
    *
    .MODEL ZXTN2007Z  NPN IS=1.5E-12 NF=1 BF=210 IKF=8 VAF=100 ISE=7.5E-13 
    +NE=1.39 NR=1 BR=120 IKR=5 VAR=25 ISC=9E-13 NC=1.37 RC=0.005 TRC1=3e-3 
    +RB=0.3 TRB1=6e-3 RE=0.024 TRE1=3e-3 CJC=110E-12 MJC=0.44 VJC=0.65 CJE=650E-12
    +TF=0.8E-9 TR=9E-9 XTB=1.4 
    *
    *$
    *


*ZETEX ZTX849 Spice Model v1.0  Last Revised 20/1/93
    *
    .MODEL ZTX849 NPN IS =5.8591E-13 NF =0.9919 BF =230 IKF=18 VAF=90
    +             ISE=2.0067E-13 NE =1.4 NR =0.9908 BR =180 IKR=6.8 
    +             VAR=20 ISC=5.3E-13 NC =1.46 RB =0.023 RE =0.0223 
    +             RC =0.015 CJC=200E-12 MJC=0.3006 VJC=0.3532 
    +             CJE=1.21E-9 TF =1.07E-9 TR =9.3E-9
    *
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=09/01/2009
*VERSION=1
*
.MODEL 2DD2679 NPN IS=5.1E-13 BF=480 NF=1 VAF=99 IKF=3.3 ISE=1.2E-13
+ NE=1.49 BR=65 NR=1 VAR=24 IKR=1 ISC=1.1E-13 NC=1.31 RE=0.0115 RB=0.15 RC=0.012
+ CJE=192E-12 VJE=0.75 MJE=0.38 CJC=35E-12 VJC=0.47 MJC=0.34 TF=0.62E-9 TR=20E-9
+ RCO=1.9 GAMMA=1E-8 QUASIMOD=1 XTB=1.35 TRE1=0.005 TRB1=0.005 TRC1=0.005
*
*$


*ZETEX FZT489 Spice Model v1.0 Last Revised 11/11/04
    *
    .MODEL FZT489 NPN IS =1.04E-13  BF =195 IKF =1.9 VAF =160 
    +              ISE=1.83E-14 NE =1.35 NR =1.00 BR =140 IKR=0.5 
    +              VAR=30 ISC=6.00E-12 NC =1.5 RB =0.3 RE =0.065
    +              RC =0.11 CJC=25.37E-12 MJC=0.3281 VJC=0.464 
    +              CJE=122E-12 MJE=0.3412 VJE=0.7631 TF =0.86E-9 
    +              TR =12.5E-9
    *
    *$
    *


*ZETEX FMMT489  Spice Model v1.0 Last Revised 13/10/93
    *
    .MODEL FMMT489 NPN IS =1.04E-13  BF =195 IKF =1.9 VAF =160 
    +              ISE=1.83E-14 NE =1.35 NR =1.00 BR =140 IKR=0.5 
    +              VAR=30 ISC=6.00E-12 NC =1.5 RB =0.3 RE =0.065
    +              RC =0.11 CJC=25.37E-12 MJC=0.3281 VJC=0.464 
    +              CJE=122E-12 MJE=0.3412 VJE=0.7631 TF =0.86E-9 
    +              TR =12.5E-9
    *
    *$
    *


*ZETEX FMMT449 Spice Model v1.0  Last Revised 11/11/04
    *
    .MODEL FMMT449 NPN IS =1.04E-13  BF =195 IKF =1.9 VAF =160 
    +              ISE=1.83E-14 NE =1.35 NR =1.00 BR =140 IKR=0.5 
    +              VAR=30 ISC=6.00E-12 NC =1.5 RB =0.3 RE =0.065
    +              RC =0.11 CJC=25.37E-12 MJC=0.3281 VJC=0.464 
    +              CJE=122E-12 MJE=0.3412 VJE=0.7631 TF =0.86E-9 
    +              TR =12.5E-9
    *
    *$
    *


*SRC=2DD1766Q;DI_2DD1766Q;BJTs NPN; Si;  32.0V  2.00A  250MHz    -
.MODEL DI_2DD1766Q  NPN (IS=6.65f NF=1.00 BF=201 VAF=102
+ IKF=2.97 ISE=13.0f NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=4.50 RE=68.7m RB=0.275 RC=27.5m
+ XTB=1.5 CJE=218p VJE=1.10 MJE=0.500 CJC=41.4p VJC=0.300
+ MJC=0.300 TF=538p TR=101n EG=1.12 )


*
*DIODES_INC_SPICE_MODEL 2DD1664R
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=14/07/2014
*VERSION=1


.MODEL DD1664R NPN IS=150E-15 NF=1 BF=224 
+ ISE=1E-15 NE=1.35 NR=1 BR=28 ISC=6E-14 IKF=5 NK=.52 VAF=30
+ NC=1.3 RB=0.5 RE=0.1 RC=0.134 QUASIMOD=1 RCO=1 GAMMA=50E-11 VO=10
+ CJC=36.5E-12 MJC=0.36 VJC=0.55 CJE=139.4E-12 MJE=0.36 VJE=0.7
+ TF=1.3E-9 TR=16E-6 TRC1=.004 TRB1=.004 TRE1=.004 XTB=1.2
*QUASIMOD=1 RCO=80 GAMMA=4E-7  IKR=0.7 VAR=64 
*$



*                (c)  2014 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*ZETEX FZT1051A Spice Model v1.0 Last Revised 18/3/97
    *
    .MODEL FZT1051A  NPN IS=1.35E-12  NF=1.0  BF=600  IKF=5.0  VAF=120
    +               ISE=0.6E-13  NE=1.25  NR=1.0  BR=150  IKR=3  VAR=15
    +               ISC=1.0E-10  NC=1.7  RB=0.1  RE=0.023  RC=0.010 
    +               CJC=90.36E-12  CJE=547.5E-12  MJC=0.385  MJE=0.357
    +               VJC=0.5 VJE=0.741  TF=600E-12  TR=8E-9
    *
    *$
    *


*ZETEX ZXTN25040DZ Spice Model v1.0 Last revision 01/06/07
    *
    .MODEL ZXTN25040DZ NPN IS=5.1E-13 BF=480 NF=1 VAF=99 IKF=3.3 ISE=1.2E-13
    +NE=1.49 BR=65 NR=1 VAR=24 IKR=1 ISC=1.1E-13 NC=1.31 RE=0.0115 RB=0.15 RC=0.012
    +CJE=192E-12 VJE=0.75 MJE=0.38 CJC=35E-12 VJC=0.47 MJC=0.34 TF=0.62E-9 TR=20E-9
    +RCO=1.9 GAMMA=1E-8 QUASIMOD=1 XTB=1.35 TRE1=0.005 TRB1=0.005 TRC1=0.005
    *
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=06/01/09
*VERSION=1
*
.MODEL DSS4540X NPN IS=1.35E-12 NF=1.0 BF=600 IKF=5.0 VAF=120
+ ISE=0.6E-13 NE=1.25 NR=1.0 BR=150 IKR=3 VAR=15
+ ISC=1.0E-10 NC=1.7 RB=0.1 RE=0.023 RC=0.010 
+ CJC=90.36E-12 CJE=547.5E-12 MJC=0.385 MJE=0.357
+ VJC=0.5 VJE=0.741 TF=600E-12 TR=8E-9
*
*$


*ZETEX ZTX1051A Spice Model v1.0 Last Revised 16/12/94
    *
    .MODEL ZTX1051A  NPN IS=1.35E-12  NF=1.0  BF=600  IKF=5.0  VAF=120
    +               ISE=0.6E-13  NE=1.25  NR=1.0  BR=150  IKR=3  VAR=15
    +               ISC=1.0E-10  NC=1.7  RB=0.1  RE=0.023  RC=0.010 
    +               CJC=90.36E-12  CJE=547.5E-12  MJC=0.385  MJE=0.357
    +               VJC=0.5 VJE=0.741  TF=600E-12  TR=8E-9
    *
    *$
    *


*ZETEX ZXTN25040DFH Spice Model v1.0 Last revision 01/06/07
    *
    .MODEL ZXTN25040DFH NPN IS=5.1E-13 BF=480 NF=1 VAF=99 IKF=3.3 ISE=1.2E-13
    +NE=1.49 BR=65 NR=1 VAR=24 IKR=1 ISC=1.1E-13 NC=1.31 RE=0.0115 RB=0.15 RC=0.012
    +CJE=192E-12 VJE=0.75 MJE=0.38 CJC=35E-12 VJC=0.47 MJC=0.34 TF=0.62E-9 TR=20E-9
    +RCO=1.9 GAMMA=1E-8 QUASIMOD=1 XTB=1.35 TRE1=0.005 TRB1=0.005 TRC1=0.005
    *
    *$
    *


*ZETEX FCX1051A Spice Model v1.0 Last Revised 3/1/03
    *
    .MODEL FCX1051A  NPN IS=1.35E-12  NF=1.0  BF=600  IKF=5.0  VAF=120
    +               ISE=0.6E-13  NE=1.25  NR=1.0  BR=150  IKR=3  VAR=15
    +               ISC=1.0E-10  NC=1.7  RB=0.1  RE=0.023  RC=0.010 
    +               CJC=90.36E-12  CJE=547.5E-12  MJC=0.385  MJE=0.357
    +               VJC=0.5 VJE=0.741  TF=600E-12  TR=8E-9
    *
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=13OCT2010
*VERSION=1
*
.MODEL DSS4240T NPN IS=6.8E-13 BF=700 NF=1.005 VAF=100 IKF=2.8
+ ISE=6E-14 NE=1.4 BR=42 NR=1 VAR=14 IKR=1 ISC=4.8E-13 NC=1.44
+ RE=0.02 RB=1 RC=0.032 CJE=141E-12 VJE=0.84 MJE=0.4 CJC=31E-12
+ VJC=0.55 MJC=0.4 TF=0.59E-9 TR=6E-9 RCO=1.7 GAMMA=3E-8
+ QUASIMOD=1 XTB=1.35 TRE1=0.0045 TRB1=0.0035 TRC1=0.0045
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=13OCT2010
*VERSION=2
*
.MODEL DSS4240V NPN IS=6.8E-13 BF=700 NF=1.005 VAF=100 IKF=2.8
+ ISE=6E-14 NE=1.4 BR=42 NR=1 VAR=14 IKR=1 ISC=4.8E-13 NC=1.44
+ RE=0.02 RB=1 RC=0.032 CJE=141E-12 VJE=0.84 MJE=0.4 CJC=31E-12
+ VJC=0.55 MJC=0.4 TF=0.59E-9 TR=6E-9 RCO=1.7 GAMMA=3E-8
+ QUASIMOD=1 XTB=1.35 TRE1=0.0045 TRB1=0.0035 TRC1=0.0045
*
*$


*ZETEX ZXTN25040DFL Spice Model v1.0 Last revision 01/06/07
    *
    .MODEL ZXTN25040DFL NPN IS=5.1E-13 BF=480 NF=1 VAF=99 IKF=3.3 ISE=1.2E-13
    +NE=1.49 BR=65 NR=1 VAR=24 IKR=1 ISC=1.1E-13 NC=1.31 RE=0.0115 RB=0.15 RC=0.012
    +CJE=192E-12 VJE=0.75 MJE=0.38 CJC=35E-12 VJC=0.47 MJC=0.34 TF=0.62E-9 TR=20E-9
    +RCO=1.9 GAMMA=1E-8 QUASIMOD=1 XTB=1.35 TRE1=0.005 TRB1=0.005 TRC1=0.005
    *
    *$
    *


*ZETEX FZT491A Spice Model v1.0 Last Revised 8/8/05
    *
    .MODEL FZT491A NPN IS =3.05E-13 NF =1.0034 BF =650 IKF=0.8 VAF=165
    +ISE=8.0191E-14 NE =1.4126 NR =1.001 BR =120 IKR=0.6 VAR=69 
    +ISC=1.6E-12 NC =1.38 RB =0.065 RE =0.109 RC =0.075 
    +CJC=17.2E-12 MJC=0.3429 VJC=0.4298 CJE=96E-12 
    +TF =0.71E-9 TR =2.5E-9
    *
    *$
    *


*ZETEX FCX491 Spice Model v1.0 Last Revised 8/8/05
    *
    .MODEL FCX491 NPN IS=3.05E-13 NF=1.0034 BF=200 IKF=0.8 VAF=165
    +ISE=8.0191E-14 NE=1.4126 NR=1.001 BR=50 IKR=0.6 VAR=69 
    +ISC=1.6E-12 NC=1.38 RB=0.065 RE=0.109 RC=0.075 
    +CJC=17.2E-12 MJC=0.3429 VJC=0.4298 CJE=96E-12 
    +TF=0.71E-9 TR=2.5E-9
    *
    *$
    *


*ZETEX FMMT491 Spice Model v1.0 Last Revised 8/8/05
    *
    .MODEL FMMT491 NPN IS=3.05E-13 NF=1.0034 BF=200 IKF=0.8 VAF=165
    +ISE=8.0191E-14 NE=1.4126 NR=1.001 BR=50 IKR=0.6 VAR=69 
    +ISC=1.6E-12 NC=1.38 RB=0.065 RE=0.109 RC=0.075 
    +CJC=17.2E-12 MJC=0.3429 VJC=0.4298 CJE=96E-12 
    +TF=0.71E-9 TR=2.5E-9
    *
    *$
    *


*ZETEX ZXTN2040F Spice Model v1.0 Last Revised 10/03/06
    *
    .MODEL ZXTN2040F NPN IS =3.05E-13 NF =1.0034 BF =650 IKF=0.8 VAF=165
    +ISE=8.0191E-14 NE =1.4126 NR =1.001 BR =120 IKR=0.6 VAR=69 
    +ISC=1.6E-12 NC =1.38 RB =0.065 RE =0.109 RC =0.075 
    +CJC=17.2E-12 MJC=0.3429 VJC=0.4298 CJE=96E-12 
    +TF =0.71E-9 TR =2.5E-9
    *
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=13OCT2010
*VERSION=2
*
.MODEL DSS4140U NPN IS=6.8E-13 BF=700 NF=1.005 VAF=100 IKF=2.8
+ ISE=6E-14 NE=1.4 BR=42 NR=1 VAR=14 IKR=1 ISC=4.8E-13 NC=1.44
+ RE=0.02 RB=1 RC=0.032 CJE=141E-12 VJE=0.84 MJE=0.4 CJC=31E-12
+ VJC=0.55 MJC=0.4 TF=0.59E-9 TR=6E-9 RCO=1.7 GAMMA=3E-8
+ QUASIMOD=1 XTB=1.35 TRE1=0.0045 TRB1=0.0035 TRC1=0.0045
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=13OCT2010
*VERSION=2
*
.MODEL DSS4140V NPN IS=6.8E-13 BF=700 NF=1.005 VAF=100 IKF=2.8
+ ISE=6E-14 NE=1.4 BR=42 NR=1 VAR=14 IKR=1 ISC=4.8E-13 NC=1.44
+ RE=0.02 RB=1 RC=0.032 CJE=141E-12 VJE=0.84 MJE=0.4 CJC=31E-12
+ VJC=0.55 MJC=0.4 TF=0.59E-9 TR=6E-9 RCO=1.7 GAMMA=3E-8
+ QUASIMOD=1 XTB=1.35 TRE1=0.0045 TRB1=0.0035 TRC1=0.0045
*
*$


*ZETEX ZXTN07045EFF Spice Model v1.0 Last revision 13/07/07
    *
    .MODEL ZXTN07045EFF NPN IS=1.5E-12 NF=1 BF=1160 IKF=4 VAF=60 ISE=4E-13 NE=1.37 
    +NR=1 BR=123 IKR=1 VAR=14.5 ISC=4E-13 NC=1.34 RB=0.1 RE=0.022 RC=0.015  +CJE=250E-12 VJE=0.68 MJE=0.36 CJC=59E-12 VJC=0.49 MJC=0.36 TF=0.6E-9
    +TR=9E-9 RCO=0.75 GAMMA=5E-9 QUASIMOD=1 XTB=1.4 TRE1=0.004 TRB1=0.004
    +TRC1=0.004
    *
    *$
    *


*ZETEX ZXT690BK Spice Model v1.0 Last revision 13/07/07
    *
    .MODEL ZXT690BK NPN IS=1.5E-12 NF=1 BF=1000 IKF=3 VAF=60 ISE=4E-13 NE=1.37 
    +NR=1 BR=123 IKR=1 VAR=14.5 ISC=4E-13 NC=1.34 RB=0.1 RE=0.045 RC=0.027 
    +CJE=250E-12 VJE=0.68 MJE=0.36 CJC=59E-12 VJC=0.49 MJC=0.36 TF=0.77E-9
    +TR=18E-9 RCO=0.93 GAMMA=5E-9 QUASIMOD=1 XTB=1.4 TRE1=0.002 TRB1=0.002 
    +TRC1=0.002 
    *
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_IM
*SIMULATOR=PSPICE
*DATE=21Oct2013
*VERSION=1
*

.MODEL DXT690BP5 NPN IS=1.5E-12 NF=1 BF=1000 IKF=3 VAF=60 ISE=4E-13 NE=1.37 
+NR=1 BR=123 IKR=1 VAR=14.5 ISC=4E-13 NC=1.34 RB=0.1 RE=0.045 RC=0.027 
+CJE=250E-12 VJE=0.68 MJE=0.36 CJC=59E-12 VJC=0.49 MJC=0.36 TF=0.77E-9
+TR=18E-9 RCO=0.93 GAMMA=5E-9 QUASIMOD=1 XTB=1.4 TRE1=0.002 TRB1=0.002 
+TRC1=0.002 

*
*                (c)  2013 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*ZETEX FZT690B Spice Model v2.0 Last revision 12/07/07
    *
    .MODEL FZT690B NPN IS=1.5E-12 NF=1 BF=1000 IKF=3 VAF=60 ISE=4E-13 NE=1.37 
    +NR=1 BR=123 IKR=1 VAR=14.5 ISC=4E-13 NC=1.34 RB=0.1 RE=0.045 RC=0.027 
    +CJE=250E-12 VJE=0.68 MJE=0.36 CJC=59E-12 VJC=0.49 MJC=0.36 TF=0.77E-9
    +TR=18E-9 RCO=0.93 GAMMA=5E-9 QUASIMOD=1 XTB=1.4 TRE1=0.002 TRB1=0.002 
    +TRC1=0.002 
    *
    *$
    *


*ZETEX FCX690B Spice Model v2.0 Last revision 12/07/07
    *
    .MODEL FCX690B NPN IS=1.5E-12 NF=1 BF=1000 IKF=3 VAF=60 ISE=4E-13 NE=1.37 
    +NR=1 BR=123 IKR=1 VAR=14.5 ISC=4E-13 NC=1.34 RB=0.1 RE=0.045 RC=0.027 
    +CJE=250E-12 VJE=0.68 MJE=0.36 CJC=59E-12 VJC=0.49 MJC=0.36 TF=0.77E-9
    +TR=18E-9 RCO=0.93 GAMMA=5E-9 QUASIMOD=1 XTB=1.4 TRE1=0.002 TRB1=0.002 
    +TRC1=0.002 
    *
    *$
    *


*ZETEX ZTX690B Spice Model v2.0 Last revision 12/07/07
    *
    .MODEL ZTX690B NPN IS=1.5E-12 NF=1 BF=1000 IKF=3 VAF=60 ISE=4E-13 NE=1.37 
    +NR=1 BR=123 IKR=1 VAR=14.5 ISC=4E-13 NC=1.34 RB=0.1 RE=0.045 RC=0.027 
    +CJE=250E-12 VJE=0.68 MJE=0.36 CJC=59E-12 VJC=0.49 MJC=0.36 TF=0.77E-9
    +TR=18E-9 RCO=0.93 GAMMA=5E-9 QUASIMOD=1 XTB=1.4 TRE1=0.002 TRB1=0.002 
    +TRC1=0.002 
    *
    *$
    *


*ZETEX ZTX450 Spice Model v1.0 Last Revised 1/4/90
    *
    .MODEL ZTX450 NPN IS =3.941445E-14 BF =175 VAF=109.45 NF =1 IKF=.8
    +ISE=7.4025E-15 NE =1.3 BR =20.5 VAR=14.25 NR =.974 IKR=.1 ISC=3.157E-13
    +NC =1.2 RB =1.1 RE =.1259 RC =.0539 CJE=63E-12 TF =.75E-9 CJC=15.8E-12
    +TR =85E-9 VJC=.505 MJC=.39
    *
    *$
    *


*ZETEX ZXTN2031F Spice Model v1.0 Last Revised 01/11/05
    *
    .MODEL ZXTN2031F NPN IS =3E-13 BF =380 VAF=100 IKF=2.5 ISE=1.1E-13 NE =1.37 
    +BR =100 VAR=28 NR =.972 IKR=0.8 ISC=6.5E-13 NC =1.372 RB =0.2 RE =.015 
    +RC =.015 CJE=250E-12 TF =1E-9 CJC=50E-12 TR =10E-9
    *
    *$
    *


*ZETEX ZXTN25050DFH Spice Model v1.0 Last Revised 09/10/07
    *
    .MODEL ZXTN25050DFH NPN IS=5E-13 NF=1 BF=520 IKF=5.6 VAF=115 ISE=1.1E-13
    + NE=1.38 NR=1 BR=22 IKR=1 VAR=65 ISC=3E-13 NC=1.25 RB=0.2 RE=0.00125
    + RC=0.00128 CJC=35.5E-12 MJC=0.32 VJC=0.45 CJE=183E-12 MJE=0.38 VJE=0.75
    + TF=5.7E-10 TR=5.3E-8 XTB=1.4 TRC1=.01 TRB1=.01 TRE1=.01 QUASIMOD=1
    + RCO=1.7 GAMMA=1.2E-8
    *
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=27JAN2011
*VERSION=1
*
.MODEL ZXTN619MA NPN IS=5.8032E-13 NF=1.0027 BF=485 IKF=2.2 VAF=84
+ ISE=1.5933E-13 NE=1.4148 NR=1.0006 BR=110 IKR=1.4 
+ VAR=51 ISC=5E-12 NC=1.45 RB=0.042 RE=0.033 
+ RC=0.0375 CJC=40E-12 MJC=0.3708 VJC=0.4347 CJE=217E-12 
+ TF=0.78E-9 TR=9E-9
*
*$


*ZETEX ZXT10N50DE6 Spice Model v1.0 Last Revised 25/11/02
    *
    .MODEL ZXT10N50DE6  NPN IS =5.8032E-13 NF =1.0027 BF =485 IKF=2.2 VAF=84
    +               ISE=1.5933E-13 NE =1.4148 NR =1.0006 BR =110 IKR=1.4 
    +               VAR=51 ISC=5E-12 NC =1.45 RB =0.042 RE =0.033 
    +               RC =0.0375 CJC=40E-12 MJC=0.3708 VJC=0.4347 CJE=217E-12 
    +               TF =0.78E-9 TR =9E-9
    *
    *$
    *


*ZETEX FCX619 Spice Model v1.0 Last Revised 25/11/02
    *
    .MODEL FCX619  NPN IS =5.8032E-13 NF =1.0027 BF =485 IKF=2.2 VAF=84
    +               ISE=1.5933E-13 NE =1.4148 NR =1.0006 BR =110 IKR=1.4 
    +               VAR=51 ISC=5E-12 NC =1.45 RB =0.042 RE =0.033 
    +               RC =0.0375 CJC=40E-12 MJC=0.3708 VJC=0.4347 CJE=217E-12 
    +               TF =0.78E-9 TR =9E-9
    *
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=09/01/2009
*VERSION=1
*
.MODEL 2DC4672 NPN IS=2.218E-13 NF=.9956 BF=230 IKF=2 VAF=100 ISE=2.9E-14
+ NE=1.35 NR=.995 BR=56 IKR=1 VAR=30 ISC=2.971E-13 NC=1.321 RB=.04
+ RE=.075 RC=.069 CJC=51E-12 MJC=.42 VJC=.595 CJE=318E-12 TF=.77E-9
+ TR=27E-9
*
*$


*ZETEX FMMT619 Spice Model v1.0 Last Revised 8/7/93
    *
    .MODEL FMMT619  NPN IS =5.8032E-13 NF =1.0027 BF =485 IKF=2.2 VAF=84
    +               ISE=1.5933E-13 NE =1.4148 NR =1.0006 BR =110 IKR=1.4 
    +               VAR=51 ISC=5E-12 NC =1.45 RB =0.042 RE =0.033 
    +               RC =0.0375 CJC=40E-12 MJC=0.3708 VJC=0.4347 CJE=217E-12 
    +               TF =0.78E-9 TR =9E-9
    *
    *$
    *


*ZETEX ZUMT619 Spice Model v1.0 Last Revised 24/1/03
    *
    .MODEL ZUMT619 NPN IS =2.61E-13 BF =550 IKF=0.99 VAF=84
    +ISE=7.17E-14 NE =1.4148 BR =110 IKR=0.63 VAR=51 ISC=2.25E-12 
    +NC =1.45 RB =0.093 RE =0.073 RC =0.083 CJC=18E-12 MJC=0.371 
    +VJC=0.435 CJE=97.7E-12 TF =0.78E-9 TR =9E-9
    *
    *$
    *


*SRC=2DC2412R;DI_2DC2412R;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. Bipolar Transistor
.MODEL DI_2DC2412R  NPN (IS=15.5f NF=1.00 BF=524 VAF=127
+ IKF=54.7m ISE=3.90p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.135 RE=0.290 RB=1.16 RC=0.116
+ XTB=1.5 CJE=22.7p VJE=1.10 MJE=0.500 CJC=7.34p VJC=0.300
+ MJC=0.300 TF=698p TR=121n EG=1.12 )


*SRC=2DC4617QLP;DI_2DC4617QLP;BJTs NPN; Si;  50.0V  0.100A  200MHz    
.MODEL DI_2DC4617QLP  NPN (IS=1.21f NF=1.00 BF=202 VAF=127
+ IKF=98.0m ISE=5.55f NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.150 RE=0.575 RB=2.30 RC=0.230
+ XTB=1.5 CJE=15.6p VJE=1.10 MJE=0.500 CJC=6.12p VJC=0.300
+ MJC=0.300 TF=765p TR=126n EG=1.12 )


*SRC=2DC4617R;DI_2DC4617R;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. Bipolar Transistor
.MODEL DI_2DC4617R  NPN (IS=15.5f NF=1.00 BF=524 VAF=127
+ IKF=54.7m ISE=3.90p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.135 RE=0.290 RB=1.16 RC=0.116
+ XTB=1.5 CJE=22.7p VJE=1.10 MJE=0.500 CJC=7.34p VJC=0.300
+ MJC=0.300 TF=698p TR=121n EG=1.12 )


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=08/01/2009
*VERSION=1
*
.MODEL 2DD2656 NPN IS=2.61E-13 BF=550 IKF=0.99 VAF=84
+ ISE=7.17E-14 NE=1.4148 BR=110 IKR=0.63 VAR=51 ISC=2.25E-12 
+ NC=1.45 RB=0.093 RE=0.073 RC=0.083 CJC=18E-12 MJC=0.371 
+ VJC=0.435 CJE=97.7E-12 TF=0.78E-9 TR=9E-9
*
*$


*SRC=DNLS350E;DI_DNLS350E;BJTs NPN; Si;  50.0V  3.00A  220MHz    
.MODEL DI_DNLS350E  NPN (IS=11.7f NF=1.00 BF=388 VAF=127
+ IKF=2.97 ISE=8.95f NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=4.50 RE=23.8m RB=95.3m RC=9.53m
+ XTB=1.5 CJE=341p VJE=1.10 MJE=0.500 CJC=45.4p VJC=0.300
+ MJC=0.300 TF=574p TR=111n EG=1.12 )


*SRC=DNLS350Y;DI_DNLS350Y;BJTs NPN; Si;  50.0V  3.00A  220MHz    
.MODEL DI_DNLS350Y  NPN (IS=11.7f NF=1.00 BF=388 VAF=127
+ IKF=2.97 ISE=8.95f NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=4.50 RE=23.8m RB=95.3m RC=9.53m
+ XTB=1.5 CJE=341p VJE=1.10 MJE=0.500 CJC=45.4p VJC=0.300
+ MJC=0.300 TF=574p TR=111n EG=1.12 )


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=13OCT2010
*VERSION=1
*
.MODEL DSS30101L NPN IS=6.8E-13 BF=700 NF=1.005 VAF=100 IKF=2.8
+ ISE=6E-14 NE=1.4 BR=42 NR=1 VAR=14 IKR=1 ISC=4.8E-13 NC=1.44
+ RE=0.02 RB=1 RC=0.032 CJE=141E-12 VJE=0.84 MJE=0.4 CJC=31E-12
+ VJC=0.55 MJC=0.4 TF=0.59E-9 TR=6E-9 RCO=1.7 GAMMA=3E-8
+ QUASIMOD=1 XTB=1.35 TRE1=0.0045 TRB1=0.0035 TRC1=0.0045
*
*$


*SRC=DXT2222A;DI_DXT2222A;BJTs NPN; Si;  40.0V  0.600A  410MHz    -
.MODEL DI_DXT2222A  NPN (IS=9.69f NF=1.00 BF=272 VAF=114
+ IKF=0.493 ISE=11.7f NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.750 RE=0.253 RB=1.01 RC=0.101
+ XTB=1.5 CJE=29.0p VJE=1.10 MJE=0.500 CJC=14.7p VJC=0.300
+ MJC=0.300 TF=362p TR=60.3n EG=1.12 )


*SRC=BC817-16;DI_BC817-16;BJTs NPN; Si;  45.0V  0.800A  220MHz   Diodes
Inc. BJTs
.MODEL DI_BC817-16  NPN (IS=4.04n NF=1.00 BF=342 VAF=121
+ IKF=0.273 ISE=6.86n NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.675 RE=0.227 RB=0.907 RC=90.7m
+ XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300 
+ TF=651p TR=111n EG=1.12 )


*SRC=BC817-25;DI_BC817-25;BJTs NPN; Si;  45.0V  0.800A  220MHz   Diodes
Inc. BJTs
.MODEL DI_BC817-25  NPN (IS=4.04n NF=1.00 BF=548 VAF=121
+ IKF=0.273 ISE=4.29n NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.675 RE=0.227 RB=0.907 RC=90.7m
+ XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300 
+ TF=651p TR=109n EG=1.12 )


*SRC=BC817-40;DI_BC817-40;BJTs NPN; Si;  45.0V  0.800A  220MHz   Diodes
Inc. BJTs
.MODEL DI_BC817-40  NPN (IS=4.04n NF=1.00 BF=822 VAF=121
+ IKF=0.273 ISE=2.86n NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.675 RE=0.227 RB=0.907 RC=90.7m
+ XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300 
+ TF=651p TR=108n EG=1.12 )


*SRC=BC807-16W;DI_BC807-16W;BJTs PNP; Si;  45.0V  0.500A  163MHz   Diodes Inc. PNP BJT
.MODEL DI_BC807-16W  NPN (IS=49.9f NF=1.00 BF=342 VAF=121
+ IKF=0.182 ISE=19.6p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.450 RE=0.663 RB=2.65 RC=0.265
+ XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300
+ MJC=0.300 TF=841p TR=112n EG=1.12


*SRC=BC807-25W;DI_BC807-25W;BJTs PNP; Si;  45.0V  0.500A  163MHz   Diodes Inc. PNP BJT
.MODEL DI_BC807-25W  NPN (IS=49.9f NF=1.00 BF=547 VAF=121
+ IKF=0.182 ISE=12.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.450 RE=0.663 RB=2.65 RC=0.265
+ XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300
+ MJC=0.300 TF=841p TR=110n EG=1.12 )


*SRC=BC807-40W;DI_BC807-40W;BJTs PNP; Si;  45.0V  0.500A  163MHz   Diodes Inc. PNP BJT
.MODEL DI_BC807-40W  NPN (IS=49.9f NF=1.00 BF=821 VAF=121
+ IKF=0.182 ISE=8.17p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.450 RE=0.663 RB=2.65 RC=0.265
+ XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300
+ MJC=0.300 TF=841p TR=109n EG=1.12 )


*SRC=BC847A;DI_BC847A;BJTs NPN; Si;  45.0V  0.100A  300MHz   Diodes Inc
BJTs
.MODEL DI_BC847A  NPN (IS=10.2f NF=1.00 BF=301 VAF=121
+ IKF=60.7m ISE=5.82p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366
+ XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 
+ TF=427p TR=50.3n EG=1.12 )


*SRC=BC847B;DI_BC847B;BJTs NPN; Si;  45.0V  0.100A  300MHz   Diodes, Inc. transistor
.MODEL DI_BC847B  NPN (IS=3.75f NF=1.00 BF=1.61k VAF=121
+ IKF=8.79m ISE=8.38p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306
+ XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300
+ MJC=0.300 TF=520p TR=78.9n EG=1.12 )


*SRC=BC847C;DI_BC847C;BJTs NPN; Si;  45.0V  0.100A  300MHz   Diodes Inc
BJTs
.MODEL DI_BC847C  NPN (IS=10.3f NF=1.00 BF=1.09k VAF=121
+ IKF=60.7m ISE=1.61p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.150 RE=0.965 RB=3.86 RC=0.386
+ XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 
+ TF=427p TR=48.6n EG=1.12 )


*SRC=BC848A;DI_BC848A;BJTs NPN; Si;  30.0V  0.100A  300MHz   Diodes Inc
BJTs
.MODEL DI_BC848A  NPN (IS=10.2f NF=1.00 BF=1.09k VAF=98.6
+ IKF=60.7m ISE=1.60p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366
+ XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 
+ TF=427p TR=48.6n EG=1.12 )


*SRC=BC848B;DI_BC848B;BJTs NPN; Si;  30.0V  0.100A  300MHz   Diodes Inc
BJTs
.MODEL DI_BC848B  NPN (IS=10.2f NF=1.00 BF=616 VAF=98.6
+ IKF=60.7m ISE=2.84p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366
+ XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 
+ TF=427p TR=49.1n EG=1.12 )


*SRC=BC847AT;DI_BC847AT;BJTs NPN; Si;  45.0V  0.100A  300MHz   Diodes Inc
BJTs
.MODEL DI_BC847AT  NPN (IS=9.98f NF=1.00 BF=301 VAF=121
+ IKF=60.7m ISE=5.75p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.150 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=13.0p VJC=0.300 MJC=0.300 
+ TF=423p TR=50.3n EG=1.12 )


*SRC=BC847BT;DI_BC847BT;BJTs NPN; Si;  45.0V  0.100A  300MHz   Diodes Inc
BJTs
.MODEL DI_BC847BT  NPN (IS=9.98f NF=1.00 BF=616 VAF=121
+ IKF=60.7m ISE=2.81p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.150 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=13.0p VJC=0.300 MJC=0.300 
+ TF=423p TR=49.1n EG=1.12 )


*SRC=BC847CT;DI_BC847CT;BJTs NPN; Si;  45.0V  0.100A  300MHz   Diodes Inc
BJTs
.MODEL DI_BC847CT  NPN (IS=9.98f NF=1.00 BF=1.09k VAF=121
+ IKF=60.7m ISE=1.58p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.150 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=13.0p VJC=0.300 MJC=0.300 
+ TF=423p TR=48.6n EG=1.12 )


*SRC=BC847AW;DI_BC847AW;BJTs NPN; Si;  45.0V  0.100A  300MHz   Diodes Inc
BJTs
.MODEL DI_BC847AW  NPN (IS=10.2f NF=1.00 BF=301 VAF=121
+ IKF=60.7m ISE=5.82p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366
+ XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 
+ TF=427p TR=50.3n EG=1.12 )


*SRC=BC847CW;DI_BC847CW;BJTs NPN; Si;  45.0V  0.100A  300MHz   Diodes Inc
BJTs
.MODEL DI_BC847CW  NPN (IS=10.2f NF=1.00 BF=1.09k VAF=121
+ IKF=60.7m ISE=1.60p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366
+ XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 
+ TF=427p TR=48.6n EG=1.12 )


*SRC=BC848AW;DI_BC848AW;BJTs NPN; Si;  30.0V  0.100A  300MHz   Diodes Inc
BJTs
.MODEL DI_BC848AW  NPN (IS=10.2f NF=1.00 BF=1.09k VAF=98.6
+ IKF=60.7m ISE=1.60p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366
+ XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 
+ TF=427p TR=48.6n EG=1.12 )


*SRC=BC848BW;DI_BC848BW;BJTs NPN; Si;  30.0V  0.100A  300MHz   Diodes Inc
BJTs
.MODEL DI_BC848BW  NPN (IS=10.2f NF=1.00 BF=616 VAF=98.6
+ IKF=60.7m ISE=2.84p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366
+ XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 
+ TF=427p TR=49.1n EG=1.12 )


*SRC=BC848CW;DI_BC848CW;BJTs NPN; Si;  30.0V  0.100A  300MHz   Diodes Inc
BJTs
.MODEL DI_BC848CW  NPN (IS=10.2f NF=1.00 BF=1.09k VAF=98.6
+ IKF=60.7m ISE=1.60p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366
+ XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 
+ TF=427p TR=48.6n EG=1.12 )


*SRC=BC847BLP;DI_BC847BLP;BJTs NPN; Si;  45.0V  0.100A  280MHz    -
.MODEL DI_BC847BLP  NPN (IS=5.62f NF=1.00 BF=450 VAF=121
+ IKF=70.3m ISE=191f NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.120 RE=0.700 RB=2.80 RC=0.280
+ XTB=1.5 CJE=14.6p VJE=1.10 MJE=0.500 CJC=6.93p VJC=0.300
+ MJC=0.300 TF=541p TR=86.5n EG=1.12 )


*SRC=BC847BLP4;DI_BC847BLP4;BJTs NPN; Si;  45.0V  0.100A  450MHz    
.MODEL DI_BC847BLP4  NPN (IS=2.31f NF=1.00 BF=425 VAF=121
+ IKF=58.6m ISE=3.67f NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=90.0m RE=0.700 RB=2.80 RC=0.280
+ XTB=1.5 CJE=14.9p VJE=1.10 MJE=0.500 CJC=6.07p VJC=0.300
+ MJC=0.300 TF=294p TR=53.9n EG=1.12 )


*ZETEX BCW68H Spice Model v1.0 Last Revised 8/8/05
    *
    .MODEL BCW68H PNP IS =3.0572E-13 NF =1.0103 BF =450 IKF=0.93 VAF=20
    +ISE=1.5E-14 NE =1.52 NR =1.007 BR =160 IKR=0.08 VAR=33 
    +ISC=3.8736E-14 NC =1.0893 RB =0.112 RE =0.144 RC =0.156 
    +CJC=42E-12 MJC=0.4449 VJC=0.3131 CJE=91E-12 
    +TF =0.51E-9 TR =3.6E-9
    *
    *$
    *


*DIODES_INC_SPICE_MODEL DN0150ALP4
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_IM
*DATE=17Aug2012
*VERSION=1.0

.MODEL DN0150ALP4 NPN (IS=26E-15 NF=1 BF=180 ISE=2E-15 NE=1.4 BR=6 ISC=10E-15 NC=1.1 NR=1 CJC=3.58E-12 MJC=0.35 VJC=0.5 CJE=15.8E-12 MJE=0.36 VJE=0.73 RC=80m RE=500m VAF=30 IKF=.5 XTB=1.8 NK=1.1)


*                (c)  2012 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*DIODES_INC_SPICE_MODEL DN0150BLP4
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_IM
*DATE=17Aug2012
*VERSION=1.0

.MODEL DN0150BLP4 NPN (IS=26E-15 NF=1 BF=260 ISE=2E-15 NE=1.4 BR=6 ISC=10E-15 NC=1.1 NR=1 CJC=3.58E-12 MJC=0.35 VJC=0.5 CJE=15.8E-12 MJE=0.36 VJE=0.73 RC=80m RE=500m VAF=30 IKF=.5 XTB=1.8 NK=1.1)

*                (c)  2012 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*SRC=DXT3904;DI_DXT3904;BJTs NPN; Si;  40.0V  0.200A  420MHz    -
.MODEL DI_DXT3904  NPN (IS=3.52e-016 NF=1.00 BF=233 VAF=114
+ IKF=39.0m ISE=2.61f NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=60.0m RE=0.655 RB=2.62 RC=0.262
+ XTB=1.5 CJE=6.25p VJE=1.10 MJE=0.500 CJC=4.78p VJC=0.300
+ MJC=0.300 TF=368p TR=59.4n EG=1.12 )


*SRC=DZT2222A;DI_DZT2222A;BJTs NPN; Si;  40.0V  0.600A  410MHz    -
.MODEL DI_DZT2222A  NPN (IS=9.69f NF=1.00 BF=272 VAF=114
+ IKF=0.493 ISE=11.7f NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.750 RE=0.253 RB=1.01 RC=0.101
+ XTB=1.5 CJE=29.0p VJE=1.10 MJE=0.500 CJC=14.7p VJC=0.300
+ MJC=0.300 TF=362p TR=60.3n EG=1.12 )


*ZETEX FZT1049A Spice Model v1.0 Last Revised 18/3/97
    *
    .MODEL     FZT1049A  NPN IS=1.5E-12  NF=1.0  BF=600  IKF=7.5  VAF=100 
    +               ISE=0.9E-13  NE=1.25  NR=1.0  BR=150  IKR=3  VAR=15
    +               ISC=5.0E-13  NC=1.76  RB=0.1  RE=0.018  RC=0.007 
    +               CJC=136E-12  CJE=550E-12  MJC=0.352  MJE=0.36
    +               VJC=0.554   VJE=0.726  TF=400E-12  TR=6.9E-9
    *
    *$
    *


*ZETEX FZT849 Spice Model v1.0 Last Revised 14/3/97
    *
    .MODEL FZT849 NPN IS =5.8591E-13 NF =0.9919 BF =230 IKF=18 VAF=90
    +             ISE=2.0067E-13 NE =1.4 NR =0.9908 BR =180 IKR=6.8 
    +             VAR=20 ISC=5.3E-13 NC =1.46 RB =0.023 RE =0.0223 
    +             RC =0.015 CJC=200E-12 MJC=0.3006 VJC=0.3532 
    +             CJE=1.21E-9 TF =1.07E-9 TR =9.3E-9
    *
    *$
    *


*SRC=MMBT2222A;DI_MMBT2222A;BJTs NPN; Si;  40.0V  0.600A  200MHz   Diodes Inc. Transistor 
.MODEL DI_MMBT2222A  NPN (IS=25.4f NF=1.00 BF=274 VAF=114 
+ IKF=0.121 ISE=14.3p NE=2.00 BR=4.00 NR=1.00 
+ VAR=24.0 IKR=0.300 RE=0.219 RB=0.877 RC=87.7m 
+ XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=14.2p VJC=0.300 
+ MJC=0.300 TF=622p TR=124n EG=1.12 )


*SRC=MMBT2222AT;DI_MMBT2222AT;BJTs NPN; Si;  40.0V  0.600A  300MHz   Diodes
Inc. BJTs
.MODEL DI_MMBT2222AT  NPN (IS=60.4f NF=1.00 BF=301 VAF=114
+ IKF=66.8m ISE=14.8p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.165 RE=0.261 RB=1.04 RC=0.104
+ XTB=1.5 CJE=36.2p VJE=1.10 MJE=0.500 CJC=23.1p VJC=0.300 MJC=0.300 
+ TF=491p TR=82.1n EG=1.12 )


*SRC=MMBT3904;DI_MMBT3904;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes Inc. NPN Transistor
.MODEL DI_MMBT3904 NPN (IS=48.3f NF=1.00 BF=410 VAF=114
+ IKF=0.121 ISE=13.1p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.300 RE=2.63 RB=10.5 RC=1.05
+ XTB=1.5 CJE=9.67p VJE=1.10 MJE=0.500 CJC=8.70p VJC=0.300
+ MJC=0.300 TF=440p TR=74.7n EG=1.12 )


*SRC=BC848C;DI_BC848C;BJTs NPN; Si;  30.0V  0.100A  300MHz   Diodes Inc
BJTs
.MODEL DI_BC848C  NPN (IS=10.2f NF=1.00 BF=1.09k VAF=98.6
+ IKF=60.7m ISE=1.60p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366
+ XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 
+ TF=427p TR=48.6n EG=1.12 )


*SRC=MMBT3904T;DI_MMBT3904T;BJTs NPN; Si;  40.0V  0.200A  347MHz   Diodes
Inc. BJTs
.MODEL DI_MMBT3904T  NPN (IS=20.2f NF=1.00 BF=410 VAF=114
+ IKF=30.4m ISE=4.25p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=75.0m RE=0.707 RB=2.83 RC=0.283
+ XTB=1.5 CJE=8.92p VJE=1.10 MJE=0.500 CJC=7.10p VJC=0.300 MJC=0.300 
+ TF=383p TR=69.9n EG=1.12 )


*SRC=MMBT4401;DI_MMBT4401;BJTs NPN; Si;  40.0V  0.600A  200MHz   Diodes, Inc. transistor
.MODEL DI_MMBT4401  NPN (IS=60.9f NF=1.00 BF=410 VAF=114
+ IKF=0.364 ISE=25.5p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.900 RE=0.713 RB=2.85 RC=0.285
+ XTB=1.5 CJE=36.2p VJE=1.10 MJE=0.500 CJC=15.4p VJC=0.300
+ MJC=0.300 TF=717p TR=121n EG=1.12 )

*SRC=UDZ5V6B;DI_UDZ5V6;Diodes;Zener <=10V; 5.60V  0.200W   Diodes Inc. Zener Diode
*SYM=HZEN
.SUBCKT DI_UDZ5V6  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 4.99
.MODEL DF D ( IS=14.7p RS=3.10 N=1.10
+ CJO=32.9p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.94f RS=1.28 N=0.828 )


*SRC=MMBT4401T;DI_MMBT4401T;BJTs NPN; Si;  40.0V  0.600A  275MHz   Diodes
Inc. BJTs
.MODEL DI_MMBT4401T  NPN (IS=1.27p NF=1.00 BF=410 VAF=114
+ IKF=60.7m ISE=47.7p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.150 RE=0.261 RB=1.04 RC=0.104
+ XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=14.2p VJC=0.300 MJC=0.300 
+ TF=533p TR=84.1n EG=1.12 )


*SRC=MMBTH24;DI_MMBTH24;BJTs NPN; Si;  40.0V  50.0mA  1.00kMHz   Diodes Inc. Transistor 
.MODEL DI_MMBTH24  NPN (IS=1.26e-016 NF=1.00 BF=95.8 VAF=114 
+ IKF=24.3m ISE=1.28p NE=2.00 BR=4.00 NR=1.00 
+ VAR=16.0 IKR=60.0m RE=1.51 RB=6.05 RC=0.605 
+ XTB=1.5 CJE=6.27p VJE=1.10 MJE=0.500 CJC=2.02p VJC=0.300 
+ MJC=0.300 TF=130p TR=27.4n EG=1.12 )


*SRC=MMST2222A;DI_MMST2222A;BJTs NPN; Si;  40.0V  0.600A  300MHz   Diodes
Inc. BJTs
.MODEL DI_MMST2222A  NPN (IS=61.0f NF=1.00 BF=410 VAF=114
+ IKF=0.121 ISE=14.8p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.300 RE=0.269 RB=1.08 RC=0.108
+ XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=15.0p VJC=0.300 MJC=0.300 
+ TF=496p TR=84.1n EG=1.12 )


*SRC=MMST3904;DI_MMST3904;BJTs NPN; Si;  40.0V  0.200A  347MHz   Diodes
Inc. BJTs
.MODEL DI_MMST3904  NPN (IS=3.95e-016 NF=1.00 BF=410 VAF=114
+ IKF=30.4m ISE=593f NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=75.0m RE=0.707 RB=2.83 RC=0.283
+ XTB=1.5 CJE=9.95p VJE=1.10 MJE=0.500 CJC=8.99p VJC=0.300 MJC=0.300 
+ TF=367p TR=70.2n EG=1.12 )


*SRC=MMST4401;DI_MMST4401;BJTs NPN; Si;  40.0V  0.600A  275MHz   Diodes Inc. BJTs
.MODEL DI_MMST4401  NPN (IS=1.27p NF=1.00 BF=410 VAF=114
+ IKF=60.7m ISE=47.7p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.150 RE=0.261 RB=1.04 RC=0.104
+ XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=14.2p VJC=0.300
+ MJC=0.300 TF=533p TR=84.1n EG=1.12 )


*ZETEX ZTX449 Spice Model v1.0 Last Revised 11/11/04
    *
    .MODEL ZTX449 NPN IS =1.04E-13  BF =195 IKF =1.9 VAF =160 
    +              ISE=1.83E-14 NE =1.35 NR =1.00 BR =140 IKR=0.5 
    +              VAR=30 ISC=6.00E-12 NC =1.5 RB =0.3 RE =0.065
    +              RC =0.11 CJC=25.37E-12 MJC=0.3281 VJC=0.464 
    +              CJE=122E-12 MJE=0.3412 VJE=0.7631 TF =0.86E-9 
    +              TR =12.5E-9
    *
    *$
    *


*****************************************************************************************************************************************
*SRC=LBN150B01;DI_LBN150B01_NPN;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes Inc. BJTs - Complementary
.MODEL DI_LBN150B01_NPN NPN (IS=5.81e-016 NF=1.00 BF=410 VAF=114
+ IKF=0.304 ISE=2.28p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.750 RE=0.707 RB=2.83 RC=0.283
+ XTB=1.5 CJE=9.67p VJE=1.10 MJE=0.500 CJC=6.86p VJC=0.300
+ MJC=0.300 TF=450p TR=70.2n EG=1.12 )

*SRC=LBN150B01;DI_LBN150B01_PNP;BJTs PNP; Si; 40.0V 0.200A 257MHz Diodes Inc. BJTs - Complementary
.MODEL DI_LBN150B01_PNP PNP (IS=7.21e-016 NF=1.00 BF=410 VAF=114
+ IKF=48.6m ISE=1.01p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.120 RE=1.21 RB=4.83 RC=0.483
+ XTB=1.5 CJE=10.9p VJE=1.10 MJE=0.500 CJC=7.57p VJC=0.300
+ MJC=0.300 TF=558p TR=84.1n EG=1.12 )
*****************************************************************************************************************************************


*****************************************************************************************************************************************
*SRC=MMDT3946;DI_MMDT3946_NPN;BJTs NPN; Si;  40.0V  0.200A  347MHz   Diodes Inc. BJTs - Complementary
.MODEL DI_MMDT3946_NPN  NPN (IS=5.81e-016 NF=1.00 BF=410 VAF=114
+ IKF=0.304 ISE=2.28p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.750 RE=0.707 RB=2.83 RC=0.283
+ XTB=1.5 CJE=9.67p VJE=1.10 MJE=0.500 CJC=6.86p VJC=0.300
+ MJC=0.300 TF=450p TR=70.2n EG=1.12 )

*SRC=MMDT3946;DI_MMDT3946_PNP;BJTs PNP; Si;  40.0V  0.200A  257MHz   Diodes Inc. BJTs - Complementary
.MODEL DI_MMDT3946_PNP  PNP (IS=7.21e-016 NF=1.00 BF=410 VAF=114
+ IKF=48.6m ISE=1.01p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.120 RE=1.21 RB=4.83 RC=0.483
+ XTB=1.5 CJE=10.9p VJE=1.10 MJE=0.500 CJC=7.57p VJC=0.300
+ MJC=0.300 TF=558p TR=84.1n EG=1.12 )
*****************************************************************************************************************************************


*SRC=MMDT3946LP4;MMDT3946LP4_NPN;BJTs NPN; Si;  40.0V  0.200A  375MHz    
.MODEL MMDT3946LP4_NPN  NPN (IS=7.48e-016 NF=1.00 BF=141 VAF=114
+ IKF=0.118 ISE=6.24f NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.180 RE=0.477 RB=1.91 RC=0.191
+ XTB=1.5 CJE=11.1p VJE=1.10 MJE=0.500 CJC=4.97p VJC=0.300
+ MJC=0.300 TF=401p TR=69.4n EG=1.12 )

*SRC=MMDT3946LP4;MMDT3946LP4_PNP;BJTs PNP; Si;  40.0V  0.200A  490MHz    
.MODEL MMDT3946LP4_PNP  PNP (IS=5.58e-016 NF=1.00 BF=162 VAF=114
+ IKF=98.0m ISE=4.72f NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.150 RE=0.865 RB=3.46 RC=0.346
+ XTB=1.5 CJE=11.1p VJE=1.10 MJE=0.500 CJC=6.63p VJC=0.300
+ MJC=0.300 TF=301p TR=52.4n EG=1.12 )


*****************************************************************************************************************************************
*SRC=MMDT4413;DI_MMDT4413_NPN;BJTs NPN; Si;  40.0V  0.600A  275MHz   Diodes Inc. BJTs - Complementaryl
.MODEL DI_MMDT4413_NPN  NPN (IS=60.7f NF=1.00 BF=410 VAF=114
+ IKF=0.219 ISE=19.7p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.540 RE=85.8m RB=0.343 RC=34.3m
+ XTB=1.5 CJE=36.2p VJE=1.10 MJE=0.500 CJC=15.4p VJC=0.300
+ MJC=0.300 TF=539p TR=84.1n EG=1.12 )

*SRC=MMDT4413;DI_MMDT4413_PNP;BJTs PNP; Si;  40.0V  0.600A  275MHz   Diodes Inc. BJTs - Complementary
.MODEL DI_MMDT4413_PNP  PNP (IS=61.0f NF=1.00 BF=410 VAF=114
+ IKF=0.340 ISE=24.7p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.269 RB=1.08 RC=0.108
+ XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300
+ MJC=0.300 TF=516p TR=84.1n EG=1.12 )
*****************************************************************************************************************************************


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=10FEB2011
*VERSION=1
*PIN_ORDER         
* 1=E2    8=C2
* 2=B2    7=C2
* 3=E1    6=C1
* 4=B1    5=C1
*
.SUBCKT ZDT6790 1 2 3 4 5 6 7 8
Q1 11 4 3 Nmod
Q2 12 2 1 Pmod
RP1 11 5 0.001
RP2 11 6 0.001
RP3 12 7 0.001
RP4 12 8 0.001
*
.MODEL Nmod NPN IS=1.5E-12 NF=1 BF=1000 IKF=3 VAF=60 ISE=4E-13 NE=1.37 
+ NR=1 BR=123 IKR=1 VAR=14.5 ISC=4E-13 NC=1.34 RB=0.1 RE=0.045 RC=0.027 
+ CJE=250E-12 VJE=0.68 MJE=0.36 CJC=59E-12 VJC=0.49 MJC=0.36 TF=0.77E-9
+ TR=18E-9 RCO=0.93 GAMMA=5E-9 QUASIMOD=1 XTB=1.4 TRE1=0.002 TRB1=0.002 
+ TRC1=0.002
.MODEL Pmod PNP IS=1.09684E-12 NF=1.0102 BF=650 IKF=1.7 NK=0.75
+ VAF=23.5 ISE=9.88593E-14 NE=1.47256 NR=1.00391 BR=270 IKR=0.2 VAR=30
+ ISC=5.4933E-14 NC=1.07427 RB=0.055 RE=0.049 RC=0.078 CJC=96E-12
+ MJC=0.495 VJC=0.67 CJE=275E-12 TF=0.75E-9 TR=10.8E-9 XTB=1.4 
+ TRE1=.0025 TRB1=.0025 TRC1=.0025
.ENDS
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=10FEB2011
*VERSION=1
*PIN_ORDER         
* 1=C1    6=E1
* 2=B1    5=B2
* 3=C2    4=E2
*
.SUBCKT ZXTC2045E6 1 2 3 4 5 6
Q1 1 2 6 Nmod
Q2 3 5 4 Pmod
*
.MODEL Nmod  NPN IS =2.5E-13 NF =1 BF =600 IKF=1 VAF=51 ISE=2E-13 
+ NE =1.4 NR =1 BR =150 IKR=.5 VAR=25 ISC=1e-13 NC =1.47 RB =0.5
+ RE =0.055 RC =0.055 CJC=23E-12 MJC=0.33 VJC=0.75 CJE=98E-12 TF =0.8E-9 
+ TR =30e-9 
.MODEL Pmod PNP IS=2e-13 BF=550 XTB=1.4 NF=1 VAF=21 IKF=0.25
+ ISE=1e-13 NE=1.38 BR=55 NR=1 VAR=9.9 IKR=0.25 ISC=1e-13 NC=1.18
+ RE=0.06 RB=0.7 RC=0.06 CJE=95.9e-12 VJE=0.897 MJE=0.468 CJC=43.4e-12
+ VJC=1.816 MJC=0.85 TF=495e-12 TR=25e-9
.ENDS
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=10FEB2011
*VERSION=1
*PIN_ORDER         
* 1=C1    6=E1
* 2=B1    5=B2
* 3=C2    4=E2
*
.SUBCKT ZXTC2063E6 1 2 3 4 5 6
Q1 1 2 6 Nmod
Q2 3 5 4 Pmod
*
.MODEL Nmod NPN IS=5.1E-13 BF=480 NF=1 VAF=99 IKF=3.3 ISE=1.2E-13
+NE=1.49 BR=65 NR=1 VAR=24 IKR=1 ISC=1.1E-13 NC=1.31 RE=0.0115 RB=0.15 RC=0.012
+CJE=192E-12 VJE=0.75 MJE=0.38 CJC=35E-12 VJC=0.47 MJC=0.34 TF=0.62E-9 TR=20E-9
+RCO=1.9 GAMMA=1E-8 QUASIMOD=1 XTB=1.35 TRE1=0.005 TRB1=0.005 TRC1=0.005
.MODEL Pmod PNP IS=4E-13 NF=1 BF=470 IKF=3.5 VAF=23 ISE=10E-14
+ NE=1.49 NR=1 BR=97 IKR=1 VAR=4.5 ISC=7.5e-14 NC=1.2 RE=0.014 RB=0.12
+ RC=0.0111 RCO=0.88 GAMMA=0.6E-9 CJC=58E-12 MJC=0.41 VJC=0.62 CJE=183E-12
+ MJE=0.5 VJE=0.95 TF=3.9E-10 TR=7.8e-9 XTB=1.5 TRE1=0.003 TRB1=0.003
+ TRC1=0.003 QUASIMOD=1
.ENDS
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=24JAN2011
*VERSION=2
*PIN_ORDER         
*1=B1
*2=E1
*3=B2
*4=E2
*5=C2
*6=C2
*7=C1
*8=C1
*
.SUBCKT ZXTC4591AMC 1 2 3 4 5 6 7 8
Q1 10 1 2 Nmod
Q2 20 3 4 Pmod
RP1 10 7 0.001
RP2 10 8 0.001
RP3 20 5 0.001
RP4 20 6 0.001
*
.MODEL Nmod NPN IS =3.05E-13 NF =1.0034 BF =650 IKF=0.8 VAF=165
+ ISE=8.0191E-14 NE =1.4126 NR =1.001 BR =120 IKR=0.6 VAR=69 
+ ISC=1.6E-12 NC =1.38 RB =0.065 RE =0.109 RC =0.075 
+ CJC=17.2E-12 MJC=0.3429 VJC=0.4298 CJE=96E-12 
+ TF =0.71E-9 TR =2.5E-9
.MODEL Pmod PNP IS =3.0572E-13 NF =1.0103 BF =450 IKF=0.93
+ VAF=20 ISE=1.5E-14 NE =1.52 NR =1.007 BR =160 IKR=0.08 VAR=33 
+ ISC=3.8736E-14 NC =1.0893 RB =0.112 RE =0.144 RC =0.156 
+ CJC=42E-12 MJC=0.4449 VJC=0.3131 CJE=91E-12 
+ TF =0.51E-9 TR =3.6E-9
.ENDS
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=24JAN2011
*VERSION=1
*PIN_ORDER         
*1=B1
*2=E1
*3=B2
*4=E2
*5=C2
*6=C2
*7=C1
*8=C1
*
.SUBCKT ZXTC6719MC 1 2 3 4 5 6 7 8
Q1 10 1 2 Nmod
Q2 20 3 4 Pmod
RP1 10 7 0.001
RP2 10 8 0.001
RP3 20 5 0.001
RP4 20 6 0.001
*
.MODEL Nmod NPN IS=5.8032E-13 NF=1.0027 BF=485 IKF=2.2 VAF=84
+ ISE=1.5933E-13 NE=1.4148 NR=1.0006 BR=110 IKR=1.4 
+ VAR=51 ISC=5E-12 NC=1.45 RB=0.042 RE=0.033 
+ RC=0.0375 CJC=40E-12 MJC=0.3708 VJC=0.4347 CJE=217E-12 
+ TF=0.78E-9 TR=9E-9
.MODEL Pmod PNP IS=6.261E-13  BF=500 IKF=1.4 VAF=28.4 
+ ISE=1.057E-13 NE=1.4923 NR=1.00 BR=42 IKR=0.65 VAR=10.21 
+ ISC=6E-14 NC=1.124 RB=0.078 RE=0.077 RC=0.04 CJC=59.54E-12 
+ MJC=0.5058 VJC=0.8427 CJE=201.4E-12 MJE=0.5244 VJE=1.021 
+ TF=0.68E-9 TR=23.7E-9 NK=0.75 XTB=1.8 TRE1=.0025 TRB1=.0025 
+ TRC1=.0025
.ENDS
*
*$


*SRC=BC857BS;DI_BC857BS;BJTs PNP; Si;  45.0V  0.100A  250MHz   Diodes Inc.
BJTs - Single device of dual
.MODEL DI_BC857BS  PNP (IS=10.2f NF=1.00 BF=650 VAF=121
+ IKF=42.5m ISE=2.25p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.105 RE=0.715 RB=2.86 RC=0.286
+ XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300 MJC=0.300 
+ TF=586p TR=95.9n EG=1.12 )


*SRC=BC857BV;DI_BC857BV;BJTs PNP; Si;  45.0V  0.100A  250MHz   Diodes Inc. BJTs
.MODEL DI_BC857BV  PNP (IS=10.2f NF=1.00 BF=650 VAF=121
+ IKF=42.5m ISE=2.25p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.105 RE=0.715 RB=2.86 RC=0.286
+ XTB=1.5 CJE=37.6p VJE=1.10 MJE=0.500 CJC=12.1p VJC=0.300
+ MJC=0.300 TF=499p TR=95.9n EG=1.12 )=499p TR=95.9n EG=1.12 )


*DIODES_INC_SPICE_MODEL DST3906DJ
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=31Aug2012
*VERSION=1.1


.MODEL DST3906DJ PNP (IS=6E-15 BF=150 NE=1.45 NF=1 ISE=2E-15 ISC=2E-15 NR=1 BR=5 NC=1.025 CJC=6.49E-12 MJC=0.32 VJC=0.5 CJE=8.819E-12 MJE=0.35 VJE=0.7 RE=.8 RC=.6 IKF=170m NK=.70 VAF=12 XTB=1.5 QUASIMOD=1 RCO=1 EG=1.15)


*                (c)  2012 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*DIODES_INC_SPICE_MODEL DST857BDJ
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=17Aug2012
*VERSION=1.2

.MODEL DST857BDJ PNP (IS=10E-15 NF=1 BF=180 ISE=2E-15 NE=1.45 BR=4 ISC=3E-15 NC=1.05 NR=1 CJC=5.45E-12 MJC=0.33 VJC=0.59 CJE=7.53E-12 MJE=0.36 VJE=0.73 RC=.2 RE=200m VAF=5 IKF=70m XTB=1.3 NK=.7)


*                (c)  2012 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*SRC=IMT17;DI_IMT17;BJTs PNP; Si;  50.0V  0.500A  240MHz    
.MODEL DI_IMT17  PNP (IS=3.85f NF=1.00 BF=289 VAF=127
+ IKF=0.592 ISE=6.90f NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.900 RE=0.150 RB=0.600 RC=60.0m
+ XTB=1.5 CJE=79.9p VJE=1.10 MJE=0.500 CJC=18.9p VJC=0.300
+ MJC=0.300 TF=606p TR=103n EG=1.12 )


*SRC=MMDT3906;DI_MMDT3906;BJTs PNP; Si;  40.0V  0.200A  257MHz   Diodes
Inc. BJTs - Single device of dual
.MODEL DI_MMDT3906  PNP (IS=7.21e-016 NF=1.00 BF=410 VAF=114
+ IKF=48.6m ISE=1.01p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.120 RE=1.21 RB=4.83 RC=0.483
+ XTB=1.5 CJE=10.9p VJE=1.10 MJE=0.500 CJC=7.57p VJC=0.300 MJC=0.300 
+ TF=558p TR=84.1n EG=1.12 )


*SRC=MMDT3906VC;DI_MMDT3906VC;BJTs PNP; Si;  40.0V  0.200A  257MHz   Diodes, Inc. PNP
.MODEL DI_MMDT3906VC  PNP (IS=20.3f NF=1.00 BF=274 VAF=114
+ IKF=36.4m ISE=6.99p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=90.0m RE=1.01 RB=4.03 RC=0.403
+ XTB=1.5 CJE=12.1p VJE=1.10 MJE=0.500 CJC=10.7p VJC=0.300
+ MJC=0.300 TF=531p TR=85.6n EG=1.12 )


*SRC=MMDT4403;DI_MMDT4403;BJTs PNP; Si;  40.0V  0.600A  275MHz   Diodes
Inc. BJTs - Single device of dual
.MODEL DI_MMDT4403  PNP (IS=61.0f NF=1.00 BF=410 VAF=114
+ IKF=0.340 ISE=24.7p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.269 RB=1.08 RC=0.108
+ XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 MJC=0.300 
+ TF=516p TR=84.1n EG=1.12 )


*ZETEX ZXT12P40DX Spice Model v1.2 Last revision 7/12/06
    *
    .MODEL ZXT12P40DX PNP IS =8E-13 NF =1 BF =700 IKF=1.2 VAF=22 ISE=6E-14 NE =1.4
    +NR =1 BR =35 IKR=1.2 VAR=10 ISC=1.3e-13 NC =1.45 RB =0.025 RE =0.025 RC =0.025
    +CJC=123E-12 MJC=0.45 VJC=0.7 CJE=412E-12 MJE=0.45 VJE=0.74 TF =5E-10 TR =30e-9
    +XTB=1.6 RCO=0.45 GAMMA=0.8E-9 QUASIMOD=1
    *
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=24JAN2011
*VERSION=1
*PIN_ORDER         
*1=B1
*2=E1
*3=B2
*4=E2
*5=C2
*6=C2
*7=C1
*8=C1
*
.SUBCKT ZXTD720MC 1 2 3 4 5 6 7 8
Q1 10 1 2 Pmod
Q2 20 3 4 Pmod
RP1 10 7 0.001
RP2 10 8 0.001
RP3 20 5 0.001
RP4 20 6 0.001
*
.MODEL Pmod PNP IS=6.261E-13  BF=500 IKF=1.4 VAF=28.4 
+ ISE=1.057E-13 NE=1.4923 NR=1.00 BR=42 IKR=0.65 VAR=10.21 
+ ISC=6E-14 NC=1.124 RB=0.078 RE=0.077 RC=0.04 CJC=59.54E-12 
+ MJC=0.5058 VJC=0.8427 CJE=201.4E-12 MJE=0.5244 VJE=1.021 
+ TF=0.68E-9 TR=23.7E-9 NK=0.75 XTB=1.8 TRE1=.0025 TRB1=.0025 
+ TRC1=.0025
.ENDS
*
*$


*SRC=BC847BS;DI_BC847BS;BJTs NPN; Si;  45.0V  0.100A  250MHz   Diodes Inc.
BJTs
.MODEL DI_BC847BS  NPN (IS=9.98f NF=1.00 BF=616 VAF=121
+ IKF=60.7m ISE=2.81p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.150 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=4.33p VJC=0.300 MJC=0.300 
+ TF=585p TR=49.1n EG=1.12 )


*SRC=BC847BVC;DI_BC847BVC;BJTs NPN; Si;  45.0V  0.100A  300MHz   Diodes, Inc. transistor
.MODEL DI_BC847BVC  NPN (IS=3.75f NF=1.00 BF=1.61k VAF=121
+ IKF=8.79m ISE=8.38p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306
+ XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300
+ MJC=0.300 TF=520p TR=78.9n EG=1.12 )


*SRC=BC847CDLP;DI_BC847CDLP;BJTs NPN; Si;  45.0V  0.100A  300MHz    Diodes Inc
.MODEL DI_BC847CDLP  NPN (IS=10.2f NF=1.00 BF=1.09k VAF=121
+ IKF=36.4m ISE=1.24p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=90.0m RE=0.490 RB=1.96 RC=0.196
+ XTB=1.5 CJE=13.4p VJE=1.10 MJE=0.500 CJC=5.92p VJC=0.300
+ MJC=0.300 TF=481p TR=79.2n EG=1.12 )


*DIODES_INC_SPICE_MODEL DST3904DJ
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=28Feb2011
*VERSION=1


.MODEL DST3904DJ NPN (IS=4.5E-15 NF=1 ISE=2E-15 NE=1.4 BF=170 ISC=30E-15 NC=.995 BR=1.2 NR=1.24 CJE=8.5p VJE=.7 MJE=.345 CJC=2.9p MJC=.23 VJC=.4 RE=.1 RB=5 RC=.1 VAR=2.4 IKR=0.300 VAF=180 IKF=0.121 TF=1n TR=250u)


*                (c)  2011 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*DIODES_INC_SPICE_MODEL DST847BDJ
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=15Mar2011
*VERSION=1

.MODEL DST847BDJ  NPN (IS=6E-15 NF=.99 BF=350 ISE=400E-18 NE=1.15 BR=1.8 NR=.97 NC=1.1 ISC=10E-15
+ RE=0.15 RB=4 RC=0.2 CJE=9p VJE=.7 MJE=0.3 CJC=3.146p VJC=0.500 MJC=0.2200 VAF=40 IKF=48m VAR=24.0 IKR=90.0m)



*                (c)  2011 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*SRC=MMDT2222A;DI_MMDT2222A;BJTs NPN; Si;  40.0V  0.600A  300MHz   Diodes Inc. BJTs - Single device of dual 
.MODEL DI_MMDT2222A  NPN (IS=61.0f NF=1.00 BF=410 VAF=114 
+ IKF=0.121 ISE=14.8p NE=2.00 BR=4.00 NR=1.00 
+ VAR=24.0 IKR=0.300 RE=0.269 RB=1.08 RC=0.108 
+ XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=15.3p VJC=0.300 
+ MJC=0.300 TF=496p TR=81.1n EG=1.12 )


*SRC=MMDT2222V;DI_MMDT2222V;BJTs NPN; Si; 40.0V 0.600A 300MHz Diodes Inc. BJTs - Single element of dual 
.MODEL DI_MMDT2222V NPN (IS=61.0f NF=1.00 BF=410 VAF=114 
+ IKF=0.121 ISE=14.8p NE=2.00 BR=4.00 NR=1.00 
+ VAR=24.0 IKR=0.300 RE=0.269 RB=1.08 RC=0.108 
+ XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=15.3p VJC=0.300 
+ MJC=0.300 TF=496p TR=81.1n EG=1.12 )


*SRC=MMDT3904VC;DI_MMDT3904VC;BJTs NPN; Si;  40.0V  0.200A  347MHz   Diodes Inc. NPN Transistor
.MODEL DI_MMDT3904VC  NPN (IS=20.3f NF=1.00 BF=274 VAF=114
+ IKF=36.4m ISE=6.99p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=90.0m RE=0.657 RB=2.63 RC=0.263
+ XTB=1.5 CJE=8.29p VJE=1.10 MJE=0.500 CJC=7.10p VJC=0.300
+ MJC=0.300 TF=426p TR=71.3n EG=1.12 )


*SRC=MMDT4401;DI_MMDT4401;BJTs NPN; Si;  40.0V  0.600A  275MHz   Diodes
Inc. BJTs - Single device of dual
.MODEL DI_MMDT4401  NPN (IS=60.7f NF=1.00 BF=410 VAF=114
+ IKF=0.219 ISE=19.7p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.540 RE=85.8m RB=0.343 RC=34.3m
+ XTB=1.5 CJE=36.2p VJE=1.10 MJE=0.500 CJC=15.4p VJC=0.300 MJC=0.300 
+ TF=539p TR=84.1n EG=1.12 )


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=08FEB2011
*VERSION=2
*PIN_ORDER         
* 1=E1    6=C1
* 2=B1    5=B2
* 3=C2    4=E2
*
.SUBCKT ZXTD09N50DE6 1 2 3 4 5 6
Q1 6 2 1 Mod1
Q2 3 5 4 Mod1
*
.MODEL Mod1 NPN IS=2.61E-13 BF=550 IKF=0.99 VAF=84
+ ISE=7.17E-14 NE=1.4148 BR=110 IKR=0.63 VAR=51 ISC=2.25E-12 
+ NC=1.45 RB=0.093 RE=0.073 RC=0.083 CJC=18E-12 MJC=0.371 
+ VJC=0.435 CJE=97.7E-12 TF=0.78E-9 TR=9E-9
.ENDS
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=10FEB2011
*VERSION=1
*PIN_ORDER         
* 1=E1    6=C1
* 2=B1    5=B2
* 3=C2    4=E2
*
.SUBCKT ZXTD2090E6 1 2 3 4 5 6
Q1 6 2 1 Mod1
Q2 3 5 4 Mod1
*
.MODEL Mod1 NPN IS=2.61E-13 BF=550 IKF=0.99 VAF=84
+ ISE=7.17E-14 NE=1.4148 BR=110 IKR=0.63 VAR=51 ISC=2.25E-12 
+ NC=1.45 RB=0.093 RE=0.073 RC=0.083 CJC=18E-12 MJC=0.371 
+ VJC=0.435 CJE=97.7E-12 TF=0.78E-9 TR=9E-9
.ENDS
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=24JAN2011
*VERSION=1
*PIN_ORDER         
*1=B1
*2=E1
*3=B2
*4=E2
*5=C2
*6=C2
*7=C1
*8=C1
*
.SUBCKT ZXTD619MC 1 2 3 4 5 6 7 8
Q1 10 1 2 Nmod
Q2 20 3 4 Nmod
RP1 10 7 0.001
RP2 10 8 0.001
RP3 20 5 0.001
RP4 20 6 0.001
*
.MODEL Nmod NPN IS=5.8032E-13 NF=1.0027 BF=485 IKF=2.2 VAF=84
+ ISE=1.5933E-13 NE=1.4148 NR=1.0006 BR=110 IKR=1.4 
+ VAR=51 ISC=5E-12 NC=1.45 RB=0.042 RE=0.033 
+ RC=0.0375 CJC=40E-12 MJC=0.3708 VJC=0.4347 CJE=217E-12 
+ TF=0.78E-9 TR=9E-9
.ENDS
*
*$


*SRC=2DA1774R;DI_2DA1774R;BJTs PNP; Si;  50.0V  0.150A  250MHz   Diodes Inc. Bipolar Transistor
.MODEL DI_2DA1774R  PNP (IS=15.2f NF=1.00 BF=523 VAF=127
+ IKF=54.7m ISE=3.88p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.710 RB=2.84 RC=0.284
+ XTB=1.5 CJE=42.6p VJE=1.10 MJE=0.500 CJC=13.7p VJC=0.300
+ MJC=0.300 TF=453p TR=96.4n EG=1.12 )


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=08/01/2009
*VERSION=1
*
.MODEL 2DA1797 PNP IS=2.715E-13 BF=170 VAF=70 NF=1.004 IKF=2.75 ISE=1E-13
+ NE=1.535 BR=23 VAR=40 NR=1.005 IKR=.55 ISC=5.15E-14 NC=1.13 RB=.07
+ RE=.065 RC=.085 CJE=360E-12 TF=.94E-9 CJC=90E-12 TR=60E-9 VJC=.705
+ MJC=.46
*
*$


*SRC=2DB1132R;DI_2DB1132R;BJTs PNP; Si;  32.0V  1.00A  200MHz    -
.MODEL DI_2DB1132R  NPN (IS=3.90f NF=1.00 BF=302 VAF=102
+ IKF=0.989 ISE=6.63f NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=1.50 RE=96.5m RB=0.386 RC=38.6m
+ XTB=1.5 CJE=127p VJE=1.10 MJE=0.500 CJC=32.4p VJC=0.300
+ MJC=0.300 TF=741p TR=123n EG=1.12 )


*DIODES_INC_SPICE_MODEL 2DB1184Q 
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=29Nov2012
*VERSION=1


.MODEL 2DB1184Q  PNP (IS=24E-14 NF=1.00 BF=200 ISE=10E-15 NE=1.28 VAF=127
+ IKF=3.34 BR=16.00 NR=1.00 ISC=30E-15 NC=1
+ VAR=20.0 IKR=5.25 RE=33.2m RB=0.133 RC=33.3m
+ XTB=1.5 CJE=411p VJE=.75 MJE=0.37 CJC=93.24p VJC=0.500
+ MJC=0.3300 TF=1.27n TR=230n EG=1.2 XTI=3)



*                (c)  2012 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=08/01/2009
*VERSION=1
*
.MODEL 2DB1694 PNP IS=2.817E-13 BF=550 IKF=0.63 VAF=28.4 
+ ISE=4.76E-14 NE=1.492 BR=42 IKR=0.293 VAR=10.21 ISC=2.7E-14 
+ NC=1.124 RB=0.173 RE=0.171 RC=0.089 CJC=28.5E-12 MJC=0.506 
+ VJC=0.843 CJE=92E-12 MJE=0.524 VJE=1.021 TF=0.8E-9 TR=20E-9
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=09/01/2009
*VERSION=1
*
.MODEL 2DB1714 PNP IS=4E-13 NF=1 BF=470 IKF=3.5 VAF=23 ISE=10E-14
+ NE=1.49 NR=1 BR=97 IKR=1 VAR=4.5 ISC=7.5e-14 NC=1.2 RE=0.014 RB=0.12
+ RC=0.0111 RCO=0.88 GAMMA=0.6E-9 CJC=58E-12 MJC=0.41 VJC=0.62 CJE=183E-12
+ MJE=0.5 VJE=0.95 TF=3.9E-10 TR=7.8e-9 XTB=1.5 TRE1=0.003 TRB1=0.003
+ TRC1=0.003 QUASIMOD=1
*
*$


*SRC=BC807-16;DI_BC807-16;BJTs PNP; Si;  45.0V  0.500A  220MHz   Diodes
Inc. BJTs
.MODEL DI_BC807-16  PNP (IS=50.7f NF=1.00 BF=342 VAF=121
+ IKF=0.273 ISE=24.2p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.675 RE=0.213 RB=0.852 RC=85.2m
+ XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300 
+ TF=631p TR=111n EG=1.12 )


*SRC=BC807-25;DI_BC807-25;BJTs PNP; Si;  45.0V  0.500A  220MHz   Diodes
Inc. BJTs
.MODEL DI_BC807-25  PNP (IS=50.7f NF=1.00 BF=547 VAF=121
+ IKF=0.273 ISE=15.1p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.675 RE=0.213 RB=0.852 RC=85.2m
+ XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300 
+ TF=631p TR=109n EG=1.12 )


*SRC=BC807-40;DI_BC807-40;BJTs PNP; Si;  45.0V  0.500A  220MHz   Diodes
Inc. BJTs
.MODEL DI_BC807-40  PNP (IS=50.7f NF=1.00 BF=821 VAF=121
+ IKF=0.273 ISE=10.1p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.675 RE=0.213 RB=0.852 RC=85.2m
+ XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300 
+ TF=631p TR=108n EG=1.12 )


*SRC=BC857A;DI_BC857A;BJTs PNP; Si;  45.0V  0.100A  250MHz   Diodes Inc. BJTs
.MODEL DI_BC857A  PNP (IS=10.2f NF=1.00 BF=342 VAF=121
+ IKF=72.9m ISE=5.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.180 RE=0.715 RB=2.86 RC=0.286
+ XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300
+ MJC=0.300 TF=581p TR=97.8n EG=1.12 )


*SRC=BC857AT;DI_BC857AT;BJTs PNP; Si;  45.0V  0.100A  250MHz   Diodes Inc. BJTs
.MODEL DI_BC857AT  PNP (IS=10.2f NF=1.00 BF=342 VAF=121
+ IKF=72.9m ISE=5.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.180 RE=0.715 RB=2.86 RC=0.286
+ XTB=1.5 CJE=37.6p VJE=1.10 MJE=0.500 CJC=12.1p VJC=0.300
+ MJC=0.300 TF=488p TR=97.8n EG=1.12 )


*SRC=BC857AW;DI_BC857AW;BJTs PNP; Si;  45.0V  0.100A  250MHz   Diodes Inc. BJTs
.MODEL DI_BC857AW  PNP (IS=10.2f NF=1.00 BF=342 VAF=121
+ IKF=72.9m ISE=5.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.180 RE=0.715 RB=2.86 RC=0.286
+ XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300
+ MJC=0.300 TF=581p TR=97.8n EG=1.12 )


*SRC=BC857B;DI_BC857B;BJTs PNP; Si;  45.0V  0.100A  200MHz   Diodes, Inc. transistor
.MODEL DI_BC857B  PNP (IS=5.51f NF=1.00 BF=424 VAF=121
+ IKF=36.4m ISE=2.35p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306
+ XTB=1.5 CJE=26.9p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300
+ MJC=0.300 TF=700p TR=121n EG=1.12 )


*SRC=BC857BLP;DI_BC857BLP;BJTs PNP; Si;  45.0V  0.100A  490MHz   Diodes Inc. BJT
.MODEL DI_BC857BLP  PNP (IS=3.72f NF=1.00 BF=650 VAF=121
+ IKF=54.7m ISE=1.54p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.135 RE=1.06 RB=4.26 RC=0.426
+ XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300
+ MJC=0.300 TF=221p TR=49.1n EG=1.12 )


*SRC=BC857BLP4;DI_BC857BLP4;BJTs PNP; Si;  45.0V  0.100A  220MHz    
.MODEL DI_BC857BLP4  PNP (IS=2.24f NF=1.00 BF=333 VAF=121
+ IKF=98.0m ISE=4.59f NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.150 RE=1.14 RB=4.58 RC=0.458
+ XTB=1.5 CJE=14.8p VJE=1.10 MJE=0.500 CJC=8.09p VJC=0.300
+ MJC=0.300 TF=659p TR=111n EG=1.12 )


*SRC=BC857BT;DI_BC857BT;BJTs PNP; Si;  45.0V  0.100A  200MHz   Diodes, Inc. transistor
.MODEL DI_BC857B  PNP (IS=5.51f NF=1.00 BF=424 VAF=121
+ IKF=36.4m ISE=2.35p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306
+ XTB=1.5 CJE=26.9p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300
+ MJC=0.300 TF=700p TR=121n EG=1.12 )


*SRC=BC857BW;DI_BC857BW;BJTs PNP; Si;  45.0V  0.100A  200MHz   Diodes, Inc. transistor
.MODEL DI_BC857BW  PNP (IS=5.51f NF=1.00 BF=424 VAF=121
+ IKF=36.4m ISE=2.35p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306
+ XTB=1.5 CJE=26.9p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300
+ MJC=0.300 TF=700p TR=121n EG=1.12 )


*SRC=BC857C;DI_BC857C;BJTs PNP; Si;  45.0V  0.100A  250MHz   Diodes Inc. BJTs
.MODEL DI_BC857C  PNP (IS=10.2f NF=1.00 BF=1.09k VAF=121
+ IKF=36.4m ISE=1.24p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=90.0m RE=0.715 RB=2.86 RC=0.286
+ XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300
+ MJC=0.300 TF=587p TR=95.0n EG=1.12 )


*SRC=BC857CT;DI_BC857CT;BJTs PNP; Si;  45.0V  0.100A  250MHz   Diodes Inc. BJTs
.MODEL DI_BC857CT  PNP (IS=10.2f NF=1.00 BF=1.09k VAF=121
+ IKF=36.4m ISE=1.24p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=90.0m RE=0.715 RB=2.86 RC=0.286
+ XTB=1.5 CJE=30.8p VJE=1.10 MJE=0.500 CJC=12.1p VJC=0.300
+ MJC=0.300 TF=526p TR=95.0n EG=1.12 )


*SRC=BC857CW;DI_BC857CW;BJTs PNP; Si;  45.0V  0.100A  250MHz   Diodes Inc. BJTs
.MODEL DI_BC857CW  PNP (IS=10.2f NF=1.00 BF=1.09k VAF=121
+ IKF=36.4m ISE=1.24p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=90.0m RE=0.715 RB=2.86 RC=0.286
+ XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300
+ MJC=0.300 TF=587p TR=95.0n EG=1.12 )


*SRC=BC858A;DIBC858A;BJTs PNP; Si;  30.0V  0.100A  250MHz   Diodes Inc. BJTs
.MODEL DIBC858A  PNP (IS=10.2f NF=1.00 BF=342 VAF=98.6
+ IKF=72.9m ISE=5.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.180 RE=0.715 RB=2.86 RC=0.286
+ XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300
+ MJC=0.300 TF=581p TR=97.8n EG=1.12 )


*SRC=BC858AW;DI_BC858AW;BJTs PNP; Si;  30.0V  0.100A  250MHz   Diodes Inc. BJTs
.MODEL DI_BC858AW  PNP (IS=10.2f NF=1.00 BF=342 VAF=98.6
+ IKF=72.9m ISE=5.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.180 RE=0.715 RB=2.86 RC=0.286
+ XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300
+ MJC=0.300 TF=581p TR=97.8n EG=1.12 )


*SRC=BC858B;DI_BC858B;BJTs PNP; Si;  30.0V  0.100A  250MHz   Diodes Inc. BJTs
.MODEL DI_BC858B  PNP (IS=10.2f NF=1.00 BF=650 VAF=98.6
+ IKF=42.5m ISE=2.25p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.105 RE=0.715 RB=2.86 RC=0.286
+ XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300
+ MJC=0.300 TF=586p TR=95.9n EG=1.12 )


*SRC=BC858BW;DI_BC858BW;BJTs PNP; Si;  30.0V  0.100A  200MHz   Diodes, Inc. transistor
.MODEL DI_BC858BW  PNP (IS=5.51f NF=1.00 BF=424 VAF=98.6
+ IKF=36.4m ISE=2.35p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306
+ XTB=1.5 CJE=26.9p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300
+ MJC=0.300 TF=700p TR=121n EG=1.12 )


*SRC=BC858C;DI_BC858C;BJTs PNP; Si;  30.0V  0.100A  250MHz   Diodes Inc. BJTs
.MODEL DI_BC858C  PNP (IS=10.2f NF=1.00 BF=1.09k VAF=98.6
+ IKF=36.4m ISE=1.24p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=90.0m RE=0.715 RB=2.86 RC=0.286
+ XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300
+ MJC=0.300 TF=587p TR=95.0n EG=1.12 )


.MODEL BCW68H PNP IS =3.0572E-13 NF =1.0103 BF =450 IKF=0.93 VAF=20
+ISE=1.5E-14 NE =1.52 NR =1.007 BR =160 IKR=0.08 VAR=33 
+ISC=3.8736E-14 NC =1.0893 RB =0.112 RE =0.144 RC =0.156 
+CJC=42E-12 MJC=0.4449 VJC=0.3131 CJE=91E-12 
+TF =0.51E-9 TR =3.6E-9


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=16/04/2009
*VERSION=1
*
.MODEL DJT4030P PNP IS=5.5e-13 NF=1 ISE=1.3e-13 NE=1.5 BF=360
+ VAF=36 IKF=8 ISC=1.1e-13 NC=1.28 BR=55 VAR=6.6 IKR=1.4 RE=9e-3
+ RB=300e-3 RC=9e-3  CJE=380e-12 VJE=0.7 MJE=0.4 CJC=111e-12
+ VJC=0.4 MJC=0.35 TF=8.5e-10 TR=3.7e-9 XTB=1.6 QUASIMOD=1
+ RCO=0.24 GAMMA=6e-10
*
*$


*SRC=DPLS350E;DI_DPLS350E;BJTs PNP; Si;  50.0V  3.00A  200MHz    
.MODEL DI_DPLS350E  PNP (IS=9.40f NF=1.00 BF=382 VAF=127
+ IKF=2.48 ISE=8.14f NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=3.75 RE=25.8m RB=0.103 RC=10.3m
+ XTB=1.5 CJE=337p VJE=1.10 MJE=0.500 CJC=76.7p VJC=0.300
+ MJC=0.300 TF=645p TR=122n EG=1.12 )


*SRC=DPLS350Y;DI_DPLS350Y;BJTs PNP; Si;  50.0V  3.00A  200MHz    
.MODEL DI_DPLS350Y  PNP (IS=9.40f NF=1.00 BF=382 VAF=127
+ IKF=2.48 ISE=8.14f NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=3.75 RE=25.8m RB=0.103 RC=10.3m
+ XTB=1.5 CJE=337p VJE=1.10 MJE=0.500 CJC=76.7p VJC=0.300
+ MJC=0.300 TF=645p TR=122n EG=1.12 )


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=21/04/2009
*VERSION=1
*
.MODEL DSS5140U PNP IS=3e-13 NF=1 ISE=8e-14 NE=1.47 BF=430
+ VAF=27 IKF=2.35 ISC=1e-13 NC=1.25 BR=29 VAR=9.3 IKR=0.5 RE=55e-3
+ RB=500e-3 RC=12e-3 CJE=158e-12 VJE=1.0 MJE=0.55 CJC=51e-12
+ VJC=0.7 MJC=0.45 TF=6e-10 TR=13.6e-9 XTB=1.6 QUASIMOD=1
+ RCO=0.85 GAMMA=6e-10
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=21/04/2009
*VERSION=1
*
.MODEL DSS5140V PNP IS=3e-13 NF=1 ISE=8e-14 NE=1.47 BF=430
+ VAF=27 IKF=2.35 ISC=1e-13 NC=1.25 BR=29 VAR=9.3 IKR=0.5 RE=55e-3
+ RB=500e-3 RC=12e-3 CJE=158e-12 VJE=1.0 MJE=0.55 CJC=51e-12
+ VJC=0.7 MJC=0.45 TF=6e-10 TR=13.6e-9 XTB=1.6 QUASIMOD=1
+ RCO=0.85 GAMMA=6e-10
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=06/01/2009
*VERSION=1
*
.MODEL DSS5240T PNP IS=4E-13 NF=1 BF=470 IKF=3.5 VAF=23 
+ ISE=10E-14 NE=1.49 NR=1 BR=97 IKR=1 VAR=4.5 ISC=7.5e-14 NC=1.2 
+ RE=0.014 RB=0.12 RC=0.0111 RCO=0.88 GAMMA=0.6E-9 CJC=58E-12 
+ MJC=0.41 VJC=0.62 CJE=183E-12 MJE=0.5 VJE=0.95 TF=3.9E-10 
+ TR=7.8e-9 XTB=1.5 TRE1=0.003 TRB1=0.003 TRC1=0.003 QUASIMOD=1
*
*$


*SRC=DXT3906;DI_DXT3906;BJTs PNP; Si;  40.0V  0.200A  510MHz    -
.MODEL DI_DXT3906  PNP (IS=2.87e-016 NF=1.00 BF=160 VAF=114
+ IKF=88.5m ISE=120f NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.150 RE=0.705 RB=2.82 RC=0.282
+ XTB=1.5 CJE=8.98p VJE=1.10 MJE=0.500 CJC=6.15p VJC=0.300
+ MJC=0.300 TF=293p TR=50.4n EG=1.12 )


*DIODES_INC_SPICE_MODEL DXT790AP5
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_IM
*DATE=25Oct2012
*VERSION=1

.MODEL DXT790AP5 PNP IS=1.09684E-12 NF=1.0102 BF=650 IKF=1.7 NK=0.75
+VAF=23.5 ISE=9.88593E-14 NE=1.47256 NR=1.00391 BR=270 IKR=0.2 VAR=30
+ISC=5.4933E-14 NC=1.07427 RB=0.055 RE=0.049 RC=0.078 CJC=96E-12
+MJC=0.495 VJC=0.67 CJE=275E-12 TF=0.75E-9 TR=10.8E-9 XTB=1.4 
+TRE1=.0025 TRB1=.0025 TRC1=.0025


*                (c)  2012 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*ZETEX   FCX1151A   Spice Model v1.0 Last Revised 3/1/03
    *
    .MODEL FCX1151A PNP IS=1.7e-12 NF=1.004 ISE=1.02e-13 NE=1.55 BF=562
    +              VAF=26.01 IKF=3.5 NR=.97 ISC=1.5e-13 NC=1.3 BR=38
    +              VAR=2.41 IKR=0.3 RE=25.37e-3 RB=250e-3 RC=25e-3 
    +              CJE=440e-12 CJC=160e-12 VJC=1.058 MJC=0.5678
    +              TF=0.8e-9 TR=55.5e-9
    *
    *$
    *


*ZETEX FCX589 Spice Model v1.0 Last Revised 26/01/05
    *
    .MODEL FCX589 PNP IS =1.3E-13 BF =200 IKF=1.8 VAF=104
    +ISE=6E-14 NE =1.45 BR =50 IKR=0.2 VAR=8 
    +ISC=3.5E-14 NC =1.23 RB =0.7 RE =0.063 RC =0.122 
    +CJC=55E-12 MJC=0.3541 VJC=0.1928 CJE=120.9E-12 
    +MJE=.4685 VJE=1.041 TF =0.51E-9 TR =3.6E-9
    *
    *$
    *


*ZETEX FCX591 Spice Model v1.0 Last Revised 8/8/05
    *
    .MODEL FCX591 PNP IS =3.2E-14 BF =170 VAF=45 NF =0.977 IKF=1.25 ISE=7E-15
    +NE =1.35 BR =50 VAR=50 NR =.986 IKR=0.15 ISC=0.9E-14 NC =1.08 RB =0.16
    +RE =0.195 RC =0.185 CJE=104E-12 TF =0.7E-9 CJC=30.5E-12 TR =3E-9 VJC=0.395
    +MJC=0.415
    *
    *$
    *


*ZETEX FCX790A Spice Model v2.0 Last Revised 1/5/03
    *
    .MODEL FCX790A PNP IS=1.09684E-12 NF=1.0102 BF=650 IKF=1.7 NK=0.75
    +VAF=23.5 ISE=9.88593E-14 NE=1.47256 NR=1.00391 BR=270 IKR=0.2 VAR=30
    +ISC=5.4933E-14 NC=1.07427 RB=0.055 RE=0.049 RC=0.078 CJC=96E-12
    +MJC=0.495 VJC=0.67 CJE=275E-12 TF=0.75E-9 TR=10.8E-9 XTB=1.4 
    +TRE1=.0025 TRB1=.0025 TRC1=.0025
    *
    *$
    *


*ZETEX FMMT549 Spice Model v1.0 Last Revised 11/10/94
    *
    .MODEL FMMT549 PNP IS =1.3E-13 BF =200 IKF=1.8 VAF=104
    +              ISE=6E-14 NE =1.45 BR =50 IKR=0.2 VAR=8 
    +              ISC=3.5E-14 NC =1.23 RB =0.7 RE =0.063 RC =0.122 
    +              CJC=55E-12 MJC=0.3541 VJC=0.1928 CJE=120.9E-12 
    +              MJE=.4685 VJE=1.041 TF =0.51E-9 TR =3.6E-9
    *
    *$
    *


*ZETEX FMMT589 Spice Model v1.0 Last Revised 11/10/94
    *
    .MODEL FMMT589 PNP IS =1.3E-13 BF =200 IKF=1.8 VAF=104
    +              ISE=6E-14 NE =1.45 BR =50 IKR=0.2 VAR=8 
    +              ISC=3.5E-14 NC =1.23 RB =0.7 RE =0.063 RC =0.122 
    +              CJC=55E-12 MJC=0.3541 VJC=0.1928 CJE=120.9E-12 
    +              MJE=.4685 VJE=1.041 TF =0.51E-9 TR =3.6E-9
    *
    *$
    *


*ZETEX FMMT591 Spice Model v1.0 Last Revised 8/8/05
    *
    .MODEL FMMT591 PNP IS =3.2E-14 BF =170 VAF=45 NF =0.977 IKF=1.25 ISE=7E-15
    +NE =1.35 BR =50 VAR=50 NR =.986 IKR=0.15 ISC=0.9E-14 NC =1.08 RB =0.16
    +RE =0.195 RC =0.185 CJE=104E-12 TF =0.7E-9 CJC=30.5E-12 TR =3E-9 VJC=0.395
    +MJC=0.415
    *
    *$
    *


*ZETEX FMMT720 Spice Model v2.0 Last Revised 1/5/03
    *
    .MODEL FMMT720 PNP IS =6.261E-13  BF =500 IKF =1.4 VAF =28.4 
    +ISE=1.057E-13 NE =1.4923 NR =1.00 BR =42 IKR=0.65 VAR=10.21 
    +ISC=6E-14 NC =1.124 RB =0.078 RE =0.077 RC =0.04 CJC=59.54E-12 
    +MJC=0.5058 VJC=0.8427 CJE=201.4E-12 MJE=0.5244 VJE=1.021 
    +TF =0.68E-9 TR =23.7E-9 NK=0.75 XTB=1.8 TRE1=.0025 TRB1=.0025 
    +TRC1=.0025 
    *
    *$
    *


*ZETEX FZT1151A Spice Model v1.0 Last Revised 12/12/96
    *
    .MODEL FZT1151A PNP IS=1.7e-12 NF=1.004 ISE=1.02e-13 NE=1.55 BF=562
    +              VAF=26.01 IKF=3.5 NR=.97 ISC=1.5e-13 NC=1.3 BR=38
    +              VAR=2.41 IKR=0.3 RE=25.37e-3 RB=250e-3 RC=25e-3 
    +              CJE=440e-12 CJC=160e-12 VJC=1.058 MJC=0.5678
    +              TF=0.8e-9 TR=55.5e-9
    *
    *$
    *


*ZETEX FZT549 Spice Model v1.0 Last Revised 26/01/05
    *
    .MODEL FZT549 PNP IS =1.3E-13 BF =200 IKF=1.8 VAF=104
    +ISE=6E-14 NE =1.45 BR =50 IKR=0.2 VAR=8 
    +ISC=3.5E-14 NC =1.23 RB =0.7 RE =0.063 RC =0.122 
    +CJC=55E-12 MJC=0.3541 VJC=0.1928 CJE=120.9E-12 
    +MJE=.4685 VJE=1.041 TF =0.51E-9 TR =3.6E-9
    *
    *$
    *


*ZETEX FZT589 Spice Model  v1.0 Last Revised 26/01/05
    *
    .MODEL FZT589 PNP IS =1.3E-13 BF =200 IKF=1.8 VAF=104
    +ISE=6E-14 NE =1.45 BR =50 IKR=0.2 VAR=8 
    +ISC=3.5E-14 NC =1.23 RB =0.7 RE =0.063 RC =0.122 
    +CJC=55E-12 MJC=0.3541 VJC=0.1928 CJE=120.9E-12 
    +MJE=.4685 VJE=1.041 TF =0.51E-9 TR =3.6E-9
    *
    *$
    *


*ZETEX FZT591A Spice Model v1.0 Last Revised 8/8/05
    *
    .MODEL FZT591A PNP IS =3.0572E-13 NF =1.0103 BF =450 IKF=0.93
    +VAF=20 ISE=1.5E-14 NE =1.52 NR =1.007 BR =160 IKR=0.08 VAR=33 
    +ISC=3.8736E-14 NC =1.0893 RB =0.112 RE =0.144 RC =0.156 
    +CJC=42E-12 MJC=0.4449 VJC=0.3131 CJE=91E-12 
    +TF =0.51E-9 TR =3.6E-9
    *
    *$
    *


*ZETEX FZT790A Spice Model v2.0 Last Revised 1/5/03
    *
    .MODEL FZT790A PNP IS=1.09684E-12 NF=1.0102 BF=650 IKF=1.7 NK=0.75
    +VAF=23.5 ISE=9.88593E-14 NE=1.47256 NR=1.00391 BR=270 IKR=0.2 VAR=30
    +ISC=5.4933E-14 NC=1.07427 RB=0.055 RE=0.049 RC=0.078 CJC=96E-12
    +MJC=0.495 VJC=0.67 CJE=275E-12 TF=0.75E-9 TR=10.8E-9 XTB=1.4 
    +TRE1=.0025 TRB1=.0025 TRC1=.0025
    *
    *$
    *


*ZETEX FZT949 Spice Model v1.0 Last Revised 14/3/97
    *
    .MODEL FZT949  PNP IS=1.5111E-12 NF=1.0127 BF=208 IKF=12.4 VAF=32.7
    +ISE=1.335E-13 NE=1.42 NR=1.009 BR=145 IKR=1.25 VAR=26.5 
    +ISC=1.392E-13 NC=1.14 RB=0.026 RE=0.019 RC=0.0175 CJC=362E-12  
    +MJC=0.338 VJC=0.4294 CJE=1.17E-9 TF=1.01E-9 TR=7.5E-9
    *
    *$
    *


*SRC=MMBT3906;DI_MMBT3906;BJTs PNP; Si;  40.0V  0.200A  257MHz   Diodes Inc. Transistor
.MODEL DI_MMBT3906  PNP (IS=20.3f NF=1.00 BF=192 VAF=114
+ IKF=60.7m ISE=12.9p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.150 RE=1.16 RB=4.63 RC=0.463
+ XTB=1.5 CJE=7.60p VJE=1.10 MJE=0.500 CJC=6.52p VJC=0.300
+ MJC=0.300 TF=589p TR=98.4n EG=1.12 )


*DIODES_INC_SPICE_MODEL MMBT3906LP
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=31Aug2012
*VERSION=1.1


.MODEL MMBT3906LP PNP (IS=6E-15 BF=150 NE=1.45 NF=1 ISE=2E-15 ISC=2E-15 NR=1 BR=5 NC=1.025 CJC=6.49E-12 MJC=0.32 VJC=0.5 CJE=8.819E-12 MJE=0.35 VJE=0.7 RE=.8 RC=.6 IKF=170m NK=.70 VAF=12 XTB=1.5 QUASIMOD=1 RCO=1 EG=1.15)



*                (c)  2012 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*SRC=MMBT3906T;DI_MMBT3906T;BJTs PNP; Si;  40.0V  0.200A  257MHz   Didoes
Inc. BJTs
.MODEL DI_MMBT3906T  PNP (IS=7.21e-016 NF=1.00 BF=410 VAF=114
+ IKF=60.7m ISE=1.13p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.150 RE=1.21 RB=4.83 RC=0.483
+ XTB=1.5 CJE=10.9p VJE=1.10 MJE=0.500 CJC=6.63p VJC=0.300 MJC=0.300 
+ TF=571p TR=84.1n EG=1.12 )


*SRC=MMBT4403;DI_MMBT4403;BJTs PNP; Si;  40.0V  0.600A  300MHz   Diodes Inc. Transistor 
.MODEL DI_MMBT4403  PNP (IS=26.9f NF=1.00 BF=274 VAF=114 
+ IKF=0.304 ISE=23.2p NE=2.00 BR=4.00 NR=1.00 
+ VAR=20.0 IKR=0.750 RE=0.263 RB=1.05 RC=0.105 
+ XTB=1.5 CJE=36.2p VJE=1.10 MJE=0.500 CJC=24.6p VJC=0.300 
+ MJC=0.300 TF=500p TR=82.4n EG=1.12 )


*****************************************************************************************************************************************
*SRC=MMBT4403T;DI_MMBT4403T;BJTs PNP; Si;  40.0V  0.600A  200MHz   Diodes Inc. BJTs
.MODEL DI_MMBT4403T  PNP (IS=60.4f NF=1.00 BF=410 VAF=114
+ IKF=0.304 ISE=23.2p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.750 RE=0.261 RB=1.04 RC=0.104
+ XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300
+ MJC=0.300 TF=667p TR=84.1n EG=1.12 )
*****************************************************************************************************************************************


*SRC=MMST3906;DI_MMST3906;BJTs PNP; Si;  40.0V  0.200A  347MHz   Diodes
Inc. BJTs
.MODEL DI_MMST3906  PNP (IS=7.06e-016 NF=1.00 BF=410 VAF=114
+ IKF=60.7m ISE=1.12p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.150 RE=1.16 RB=4.63 RC=0.463
+ XTB=1.5 CJE=7.84p VJE=1.10 MJE=0.500 CJC=7.10p VJC=0.300 MJC=0.300 
+ TF=422p TR=84.1n EG=1.12 )


*SRC=MMST4403;DI_MMST4403;BJTs PNP; Si;  40.0V  0.600A  300MHz   Diodes
Inc. BJTs
.MODEL DI_MMST4403  PNP (IS=60.4f NF=1.00 BF=410 VAF=114
+ IKF=0.334 ISE=24.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.825 RE=0.261 RB=1.04 RC=0.104
+ XTB=1.5 CJE=31.4p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 MJC=0.300 
+ TF=486p TR=81.1n EG=1.12 )


*ZETEX ZTX549 Spice Model v1.0 Last Revised 11/10/94
    *
    .MODEL ZTX549 PNP IS =1.3E-13 BF =200 IKF=1.8 VAF=104
    +              ISE=6E-14 NE =1.45 BR =50 IKR=0.2 VAR=8 
    +              ISC=3.5E-14 NC =1.23 RB =0.7 RE =0.063 RC =0.122 
    +              CJC=55E-12 MJC=0.3541 VJC=0.1928 CJE=120.9E-12 
    +              MJE=.4685 VJE=1.041 TF =0.51E-9 TR =3.6E-9
    *
    *$
    *


*ZETEX ZTX550 Spice Model v1.0 Last Revised 24/7/01
    *
    .MODEL ZTX550 PNP IS =3.2E-14 BF =170 VAF=45 NF =0.977 IKF=1.25 ISE=7E-15
    +NE =1.35 BR =50 VAR=50 NR =.986 IKR=0.15 ISC=0.9E-14 NC =1.08 RB =0.16
    +RE =0.195 RC =0.185 CJE=104E-12 TF =0.7E-9 CJC=30.5E-12 TR =3E-9 VJC=0.395
    +MJC=0.415
    *
    *$
    *


*ZETEX ZTX790A Spice Model v2.0 Last Revised 1/5/03
    *
    .MODEL ZTX790A PNP IS=1.09684E-12 NF=1.0102 BF=650 IKF=1.7 NK=0.75
    +VAF=23.5 ISE=9.88593E-14 NE=1.47256 NR=1.00391 BR=270 IKR=0.2 VAR=30
    +ISC=5.4933E-14 NC=1.07427 RB=0.055 RE=0.049 RC=0.078 CJC=96E-12
    +MJC=0.495 VJC=0.67 CJE=275E-12 TF=0.75E-9 TR=10.8E-9 XTB=1.4 
    +TRE1=.0025 TRB1=.0025 TRC1=.0025
    *
    *$
    *


*ZETEX ZTX949 Spice Model v1.0 Last Revised 27/5/92
    *
    .MODEL ZTX949  PNP IS=1.5111E-12 NF=1.0127 BF=208 IKF=12.4 VAF=32.7
    +ISE=1.335E-13 NE=1.42 NR=1.009 BR=145 IKR=1.25 VAR=26.5 
    +ISC=1.392E-13 NC=1.14 RB=0.026 RE=0.019 RC=0.0175 CJC=362E-12  
    +MJC=0.338 VJC=0.4294 CJE=1.17E-9 TF=1.01E-9 TR=7.5E-9
    *
    *$
    *


*ZETEX ZUMT720 Spice Model v1.0 Last Revised 14/1/03
    *
    .MODEL ZUMT720 PNP IS=2.817E-13 BF=550 IKF=0.63 VAF=28.4 
    +ISE=4.76E-14 NE=1.492 BR=42 IKR=0.293 VAR=10.21 ISC=2.7E-14 
    +NC =1.124 RB=0.173 RE=0.171 RC=0.089 CJC=28.5E-12 MJC=0.506 
    +VJC=0.843 CJE=92E-12 MJE=0.524 VJE=1.021 TF=0.8E-9 TR=20E-9
    *
    *$
    *


*ZETEX ZX5T3Z Spice Model v1.1 Last Revised 3/6/2004
    *
    .MODEL ZX5T3 PNP IS=2e-12 NF=1 ISE=9e-13 NE=1.55 BF=600 VAF=26
    +IKF=2.5 NR=.97 ISC=2e-13 NC=1.4 BR=105 VAR=2.41 IKR=1.5 RE=2e-3
    +RB=700e-3 RC=20e-3 CJE=535e-12 CJC=165e-12 TF=0.6e-9 TR=10e-9
    +XTB=1.5  
    *
    *$
    *


*ZETEX ZX5T949G Spice Model v1.0 Last Revised 18/03/05
    *
    .MODEL ZX5T949G  PNP IS=1.5111E-12 NF=1.0127 BF=208 XTB=1.4 IKF=7.5
    +VAF=43.4 ISE=1.335E-13 NE=1.42 NR=1.009 BR=100 IKR=1.3 VAR=9.7
    +ISC=1.392E-13 NC=1.22 RB=0.12 RE=0.022 RC=0.004 CJC=246E-12
    +MJC=0.338 VJC=0.4294 CJE=796E-12 TF=1.01E-9 TR=5E-9
    *
    *$
    *


*ZETEX ZXTP07040DFF Spice Model v1.0 Last Revised 12/10/07
    *
    .MODEL ZXTP07040DFF PNP IS=7.5E-13 NF=1 BF=490 VAF=34 ISE=1.9E-13
    + IKF=3 NE=1.49 BR=69 VAR=5.7 ISC=1.3E-13 NC=1.22 RC=0.006 RB=0.1
    + RE=0.022 CJC=105E-12 MJC=0.44 VJC=0.65 CJE=299E-12 MJE=0.52 VJE=0.96
    + TF=0.47E-9 TR=10E-9 XTB=1.4 TRC1=.005 TRB1=.005 TRE1=.005 RCO=0.58
    + GAMMA=6E-10 QUASIMOD=1
    *
    *$
    *


*ZETEX ZXT10P40DE6 Spice Model v2.0 Last Revised 1/5/03
    *
    .MODEL ZXT10P40DE6 PNP IS =6.261E-13  BF =500 IKF =1.4 VAF =28.4 
    +ISE=1.057E-13 NE =1.4923 NR =1.00 BR =42 IKR=0.65 VAR=10.21 
    +ISC=6E-14 NC =1.124 RB =0.078 RE =0.077 RC =0.04 CJC=59.54E-12 
    +MJC=0.5058 VJC=0.8427 CJE=201.4E-12 MJE=0.5244 VJE=1.021 
    +TF =0.68E-9 TR =23.7E-9 NK=0.75 XTB=1.8 TRE1=.0025 TRB1=.0025 
    +TRC1=.0025 
    *
    *$
    *


*ZETEX ZXT13P40DE6 Spice Model v1.0 Last Revised 24/10/07
    *
    .MODEL ZXT13P40DE6 PNP IS=1.6E-12 NF=1 BF=600 VAF=29.9 ISE=1.2E-13
    + IKF=4 NE=1.45 BR=48 VAR=6.8 ISC=1.2E-13 NC=1.1 IKR=0.4 RC=0.028
    + RB=0.10 RE=0.022 QUASIMOD=1 RCO=0.5 GAMMA=2.5E-9 CJC=155E-12 MJC=0.43
    + VJC=0.6 CJE=570E-12 MJE=0.59 VJE=1.1 TF=0.8E-9 TR=18E-9 TRC1=0.005
    + TRB1=0.005 TRE1=0.005 XTB=1.4
    *
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=10/11/2009
*VERSION=1
*
.MODEL ZXT790AK PNP IS=1.09684E-12 NF=1.0102 BF=650 IKF=1.7 NK=0.75
+VAF=23.5 ISE=9.88593E-14 NE=1.47256 NR=1.00391 BR=270 IKR=0.2 VAR=30
+ISC=5.4933E-14 NC=1.07427 RB=0.055 RE=0.049 RC=0.078 CJC=96E-12
+MJC=0.495 VJC=0.67 CJE=275E-12 TF=0.75E-9 TR=10.8E-9 XTB=1.4 
+TRE1=.0025 TRB1=.0025 TRC1=.0025
*
*$


*ZETEX ZXTP2008G Spice Model v1.0 Last revision 24/03/06
    *
    .MODEL ZXTP2008G  PNP IS=1.5111E-12 NF=1.0127 BF=208 XTB=1.4 IKF=7.5
    +VAF=43.4 ISE=1.335E-13 NE=1.42 NR=1.009 BR=100 IKR=1.3 VAR=9.7
    +ISC=1.392E-13 NC=1.22 RB=0.12 RE=0.022 RC=0.004 CJC=246E-12
    +MJC=0.338 VJC=0.4294 CJE=796E-12 TF=1.01E-9 TR=5E-9
    *
    *$
    *


*ZETEX ZXTP2008Z Spice Model v1.0 Last revision 24/03/06
    *
    .MODEL ZXTP2008Z  PNP IS=1.5111E-12 NF=1.0127 BF=208 XTB=1.4 IKF=7.5
    +VAF=43.4 ISE=1.335E-13 NE=1.42 NR=1.009 BR=100 IKR=1.3 VAR=9.7
    +ISC=1.392E-13 NC=1.22 RB=0.12 RE=0.022 RC=0.004 CJC=246E-12
    +MJC=0.338 VJC=0.4294 CJE=796E-12 TF=1.01E-9 TR=5E-9
    *
    *$
    *


*ZETEX ZXTP2009Z Spice Model v1.0 Last Revised 24/03/2006
    *
    .MODEL ZXTP2009Z PNP IS=2e-12 NF=1 ISE=9e-13 NE=1.55 BF=600 VAF=26
    +IKF=2.5 NR=.97 ISC=2e-13 NC=1.4 BR=105 VAR=2.41 IKR=1.5 RE=2e-3
    +RB=700e-3 RC=20e-3 CJE=535e-12 CJC=165e-12 TF=0.6e-9 TR=10e-9
    +XTB=1.5  
    *
    *$
    *


*ZETEX ZXTP2025F Spice Model v1.0 Last revision 31/03/06
    *
    .MODEL ZXTP2025F PNP IS=6E-13 NF=.996 BF=340 VAF=31 ISE=1.3E-13 IKF=4
    +NE=1.7 BR=45 VAR=12 ISC=7E-14 NC=1.7 RC=0.009 RB=.19 RE=0.009
    +CJC=130E-12 MJC=0.425 VJC=0.68 CJE=510E-12 MJE=0.4 VJE=0.68 TF=0.75E-9
    +TR=11E-9 XTB=1.4 QUASIMOD=1 RCO=0.4 GAMMA=0.5E-9
    *
    *$
    *


*ZETEX ZXTP2041F Spice Model v1.0 Last Revised 10/03/06
    *
    .MODEL ZXTP2041F PNP IS =3.0572E-13 NF =1.0103 BF =450 IKF=0.93
    +VAF=20 ISE=1.5E-14 NE =1.52 NR =1.007 BR =160 IKR=0.08 VAR=33 
    +ISC=3.8736E-14 NC =1.0893 RB =0.112 RE =0.144 RC =0.156 
    +CJC=42E-12 MJC=0.4449 VJC=0.3131 CJE=91E-12 
    +TF =0.51E-9 TR =3.6E-9
    *
    *$
    *


*ZETEX ZXTP25040DFH Spice Model v1.0 Last revision 25/07/07
    *
    .MODEL ZXTP25040DFH PNP IS=4E-13 NF=1 BF=470 IKF=3.5 VAF=23 ISE=10E-14
    +NE=1.49 NR=1 BR=97 IKR=1 VAR=4.5 ISC=7.5e-14 NC=1.2 RE=0.014 RB=0.12
    +RC=0.0111 RCO=0.88 GAMMA=0.6E-9 CJC=58E-12 MJC=0.41 VJC=0.62 CJE=183E-12
    +MJE=0.5 VJE=0.95 TF=3.9E-10 TR=7.8e-9 XTB=1.5 TRE1=0.003 TRB1=0.003
    +TRC1=0.003 QUASIMOD=1
    *
    *$
    *


*ZETEX ZXTP25040DFL Spice Model v1.0 Last revision 25/07/07
    *
    .MODEL ZXTP25040DFL PNP IS=4E-13 NF=1 BF=470 IKF=3.5 VAF=23 ISE=10E-14
    +NE=1.49 NR=1 BR=97 IKR=1 VAR=4.5 ISC=7.5e-14 NC=1.2 RE=0.014 RB=0.12
    +RC=0.0111 RCO=0.88 GAMMA=0.6E-9 CJC=58E-12 MJC=0.41 VJC=0.62 CJE=183E-12
    +MJE=0.5 VJE=0.95 TF=3.9E-10 TR=7.8e-9 XTB=1.5 TRE1=0.003 TRB1=0.003
    +TRC1=0.003 QUASIMOD=1
    *
    *$
    *


.MODEL ZXTP25040DZ PNP IS=4E-13 NF=1 BF=470 IKF=3.5 VAF=23 ISE=10E-14
+ NE=1.49 NR=1 BR=97 IKR=1 VAR=4.5 ISC=7.5e-14 NC=1.2 RE=0.014 RB=0.12
+ RC=0.0111 RCO=0.88 GAMMA=0.6E-9 CJC=58E-12 MJC=0.41 VJC=0.62 CJE=183E-12
+ MJE=0.5 VJE=0.95 TF=3.9E-10 TR=7.8e-9 XTB=1.5 TRE1=0.003 TRB1=0.003
+ TRC1=0.003 QUASIMOD=1


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=27JAN2011
*VERSION=1
*
.MODEL ZXTP720MA PNP IS=6.261E-13  BF=500 IKF=1.4 VAF=28.4 
+ ISE=1.057E-13 NE=1.4923 NR=1.00 BR=42 IKR=0.65 VAR=10.21 
+ ISC=6E-14 NC=1.124 RB=0.078 RE=0.077 RC=0.04 CJC=59.54E-12 
+ MJC=0.5058 VJC=0.8427 CJE=201.4E-12 MJE=0.5244 VJE=1.021 
+ TF=0.68E-9 TR=23.7E-9 NK=0.75 XTB=1.8 TRE1=.0025 TRB1=.0025 
+ TRC1=.0025
*
*$


*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=14/11/2013
*VERSION=1


.MODEL DSS3540M PNP IS=20e-14 NF=1 ISE=5e-15 NE=1.3 BF=350
+ VAF=26 IKF=1 ISC=9e-15 NC=1.03 BR=15 NR=1 VAR=5.7 IKR=0.6 RE=0.067
+ RB=0.33 RC=0.012 CJE=36.99e-12 VJE=0.75 MJE=0.41 CJC=13.96e-12 VJC=0.5
+ MJC=0.33 TF=4.5e-10 TR=5.6e-9 QUASIMOD=1 RCO=0.66 GAMMA=1.3e-9 NK=.71
+ XTB=1.5 TRE1=0.004 TRB1=0.003 TRC1=0.004



*                (c)  2013 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*DIODES_INC_SPICE_MODEL DSS2540M
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=02Apr2012
*VERSION=1


.MODEL DSS2540M NPN(IS=6E-14 BF=500 NF=.98 ISE=1E-14 NE=1.25 ISC=3.3E-14 BR=15 NR=1 NC=1.12 CJE=36.592p VJE=.75 MJE=.37 CJC=9.674p VJC=.5 MJC=.33 VAF=28 IKF=1 RC=.1 RE=.05 NK=.808)

*                (c)  2011 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*DIODES_INC_SPICE_MODEL DN0150ADJ
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=17Aug2012
*VERSION=1.2

.MODEL DN0150ADJ NPN (IS=26E-15 NF=1 BF=180 ISE=2E-15 NE=1.4 BR=6 ISC=10E-15 NC=1.1 NR=1 CJC=3.58E-12 MJC=0.35 VJC=0.5 CJE=15.8E-12 MJE=0.36 VJE=0.73 RC=80m RE=500m VAF=30 IKF=.5 XTB=1.8 NK=1.1)


*                (c)  2012 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*DIODES_INC_SPICE_MODEL DN0150BDJ
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=17Aug2012
*VERSION=1.2

.MODEL DN0150BDJ NPN (IS=26E-15 NF=1 BF=260 ISE=2E-15 NE=1.4 BR=6 ISC=10E-15 NC=1.1 NR=1 CJC=3.58E-12 MJC=0.35 VJC=0.5 CJE=15.8E-12 MJE=0.36 VJE=0.73 RC=80m RE=500m VAF=30 IKF=.5 XTB=1.8 NK=1.1)

*                (c)  2012 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*DIODES_INC_SPICE_MODEL DST3946DPJ
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=31Aug2012
*VERSION=1.1

.SUBCKT DST3946DPJ 1 2 3 4 5 6

Q1 6 2 1 DST3904DJ
Q2 3 5 4 DST3906DJ

.MODEL DST3904DJ NPN (IS=4.5E-15 NF=1 ISE=2E-15 NE=1.4 BF=170 ISC=30E-15 NC=.995 BR=1.2 NR=1.24 CJE=8.5p VJE=.7 MJE=.345 CJC=2.9p MJC=.23 VJC=.4 RE=.1 RB=5 RC=.1 VAR=2.4 IKR=0.300 VAF=180 IKF=0.121 TF=1n TR=250u)

.MODEL DST3906DJ PNP (IS=6E-15 BF=150 NE=1.45 NF=1 ISE=2E-15 ISC=2E-15 NR=1 BR=5 NC=1.025 CJC=6.49E-12 MJC=0.32 VJC=0.5 CJE=8.819E-12 MJE=0.35 VJE=0.7 RE=.8 RC=.6 IKF=170m NK=.70 VAF=12 XTB=1.5 QUASIMOD=1 RCO=1 EG=1.15)

.ENDS

*                (c)  2012 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*DIODES_INC_SPICE_MODEL DST847BPDP6
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=17Aug2012
*VERSION=1.1

.SUBCKT DST847BPDP6 1 2 3 4 5 6

Q1 6 2 1 DST847BDJ
Q2 3 5 4 DST857BDJ

.MODEL DST847BDJ  NPN (IS=6E-15 NF=.99 BF=350 ISE=400E-18 NE=1.15 BR=1.8 NR=.97 NC=1.1 ISC=10E-15 RE=0.15 RB=4 RC=0.2 CJE=9p VJE=.7 MJE=0.3 CJC=3.146p VJC=0.500 MJC=0.2200 VAF=40 IKF=48m VAR=24.0 IKR=90.0m)

.MODEL DST857BDJ PNP (IS=10E-15 NF=1 BF=180 ISE=2E-15 NE=1.45 BR=4 ISC=3E-15 NC=1.05 NR=1 CJC=5.45E-12 MJC=0.33 VJC=0.59 CJE=7.53E-12 MJE=0.36 VJE=0.73 RC=.2 RE=200m VAF=5 IKF=70m XTB=1.3 NK=.7)

.ENDS

*                (c)  2012 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*DIODES_INC_SPICE_MODEL MMBT3904LP
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_IM
*DATE=17Aug2012
*VERSION=1.0


.MODEL MMBT3904LP NPN (IS=4.5E-15 NF=1 ISE=2E-15 NE=1.4 BF=170 ISC=30E-15 NC=.995 BR=1.2 NR=1.24 CJE=8.5p VJE=.7 MJE=.345 CJC=2.9p MJC=.23 VJC=.4 RE=.1 RB=5 RC=.1 VAR=2.4 IKR=0.300 VAF=180 IKF=0.121 TF=1n TR=250u)


*                (c)  2012 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*DIODES_INC_SPICE_MODEL 2DB1182Q 
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=6Nov2012
*VERSION=1


.MODEL 2DB1182Q  PNP (IS=24E-14 NF=1.00 BF=200 ISE=10E-15 NE=1.28 VAF=127
+ IKF=3.34 BR=16.00 NR=1.00 ISC=30E-15 NC=1
+ VAR=20.0 IKR=5.25 RE=33.2m RB=0.133 RC=33.3m
+ XTB=1.5 CJE=411p VJE=.75 MJE=0.37 CJC=93.24p VJC=0.500
+ MJC=0.3300 TF=1.27n TR=230n EG=1.2 XTI=3)



*                (c)  2012 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*DIODES_INC_SPICE_MODEL BC847BFA
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_IM
*DATE=10Jul2013
*VERSION=1.0

.MODEL BC847BFA  NPN (IS=6E-15 NF=.99 BF=350 ISE=400E-18 NE=1.15 BR=1.8 NR=.97 NC=1.1 ISC=10E-15 RE=0.15 RB=4 RC=0.2 CJE=9p VJE=.7 MJE=0.3 CJC=3.146p VJC=0.500 MJC=0.2200 VAF=40 IKF=48m VAR=24.0 IKR=90.0m)



*                (c)  2013 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*DIODES_INC_SPICE_MODEL BC857BFA
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_IM
*DATE=10Jul2013
*VERSION=1.0

.MODEL BC857BFA PNP (IS=10E-15 NF=1 BF=180 ISE=2E-15 NE=1.45 BR=4 ISC=3E-15 NC=1.05 NR=1 CJC=5.45E-12 MJC=0.33 VJC=0.59 CJE=7.53E-12 MJE=0.36 VJE=0.73 RC=.2 RE=200m VAF=5 IKF=70m XTB=1.3 NK=.7)


*                (c)  2013 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*DIODES_INC_SPICE_MODEL MMBT3904FA
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_IM
*DATE=22Oct2013
*VERSION=2.0

.MODEL MMBT3904FA NPN (IS=4.5E-15 NF=1 ISE=2E-15 NE=1.4 BF=170 ISC=30E-15 NC=.995 BR=1.2 NR=1.24 CJE=8.5p VJE=.7 MJE=.345 CJC=2.9p MJC=.23 VJC=.4 RE=.1 RB=5 RC=.1 VAR=2.4 IKR=0.300 VAF=180 IKF=0.121 TF=1n TR=250u)


*                (c)  2013 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*DIODES_INC_SPICE_MODEL MMBT3906FA
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_IM
*DATE=10Jul2013
*VERSION=1.0


.MODEL MMBT3906FA PNP (IS=6E-15 BF=150 NE=1.45 NF=1 ISE=2E-15 ISC=2E-15 NR=1 BR=5 NC=1.025 CJC=6.49E-12 MJC=0.32 VJC=0.5 CJE=8.819E-12 MJE=0.35 VJE=0.7 RE=.8 RC=.6 IKF=170m NK=.70 VAF=12 XTB=1.5 QUASIMOD=1 RCO=1 EG=1.15)



*                (c)  2013 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*DIODES_INC_SPICE_MODEL
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG
*DATE=18Apr2014
*VERSION=1.1

.MODEL DP0150BLP4 PNP IS=3E-15 NF=1 BF=145 ISE=2E-15 NE=1.45 
+ BR=4 ISC=15E-15 NC=1.05 NR=1 CJC=5.45E-12 MJC=0.33 VJC=0.59
+ CJE=7.53E-12 MJE=0.36 VJE=0.73 RC=.2 RE=200m VAF=5 IKF=135m XTB=1 NK=.7
.SIMULATOR DEFAULT


*         (c)  2014 Diodes Inc
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*

.SIMULATOR DEFAULT


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DDTC115GE;DI_DDTC115GE;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC115GE  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
*****************************************************************************************************************************************


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DDTC115GUA;DI_DDTC115GUA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC115GUA  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
*****************************************************************************************************************************************


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC115TE;DI_DDTC115TE;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC115TE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC115TUA;DI_DDTC115TUA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC115TUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DDTC122LE;DI_DDTC122LE;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC122LE  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
*****************************************************************************************************************************************


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DDTC122LU;DI_DDTC122LU;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC122LU  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
*****************************************************************************************************************************************


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DDTC122LE;DI_DDTC122TE;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC122LE  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
*****************************************************************************************************************************************


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DDTC122TU;DI_DDTC122TU;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC122TU  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
*****************************************************************************************************************************************


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC123EE;DI_DDTC123EE;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC123EE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DDTC123EUA;DI_DDTC123EUA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC123EUA  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
*****************************************************************************************************************************************


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC123JE;DI_DDTC123JE;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC123JE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC123JUA;DI_DDTC123JUA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC123JUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC123TCA;DI_DDTC123TCA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC123TCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC123TE;DI_DDTC123TE;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC123TE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC123TUA;DI_DDTC123TUA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC123TUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC123YCA;DI_DDTC123YCA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC123YCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC123YE;DI_DDTC123YE;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC123YE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC123YUA;DI_DDTC123YUA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC123YUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC124EE;DI_DDTC124EE;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC124EE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DDTC124EUA;DI_DDTC124EUA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC124EUA  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
*****************************************************************************************************************************************


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DDTC124GE;DI_DDTC124GE;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC124GE  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
*****************************************************************************************************************************************


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DDTC124GUA;DI_DDTC124GUA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC124GUA  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
*****************************************************************************************************************************************


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC124TCA;DI_DDTC124TCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC124TCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC124TE;DI_DDTC124TE;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC124TE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC124TUA;DI_DDTC124TUA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC124TUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC124XCA;DI_DDTC124XCA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC124XCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC124XE;DI_DDTC124XE;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC124XE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC124XUA;DI_DDTC124XUA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC124XUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC125TCA;DI_DDTC125TCA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC125TCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC125TE;DI_DDTC125TE;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC125TE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC125TUA;DI_DDTC125TUA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC125TUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DDTC142JE;DI_DDTC142JE;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC142JE  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
*****************************************************************************************************************************************


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DDTC142JU;DI_DDTC142JU;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC142JU  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
*****************************************************************************************************************************************


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DDTC142TE;DI_DDTC142TE;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC142TE  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
*****************************************************************************************************************************************


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DDTC142TU;DI_DDTC142TU;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC142TU  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
*****************************************************************************************************************************************


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC143EE;DI_DDTC143EE;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC143EE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DDTC143EUA;DI_DDTC143EUA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC143EUA  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
*****************************************************************************************************************************************


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC143FCA;DI_DDTC143FCA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC143FCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC143FE;DI_DDTC143FE;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC143FE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC143FUA;DI_DDTC143FUA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC143FUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC143TCA;DI_DDTC143TCA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC143TCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC143TE;DI_DDTC143TE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC143TE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC143TUA;DI_DDTC143TUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC143TUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC143XCA;DI_DDTC143XCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC143XCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC143XE;DI_DDTC143XE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC143XE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC143XUA;DI_DDTC143XUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC143XUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC143ZCA;DI_DDTC143ZCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC143ZCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC143ZE;DI_DDTC143ZE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC143ZE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC143ZUA;DI_DDTC143ZUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC143ZUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC144EE;DI_DDTC144EE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC144EE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DDTC144EUA;DI_DDTC144EUA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC144EUA  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
*****************************************************************************************************************************************


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DDTC144GE;DI_DDTC144GE;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC144GE  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
*****************************************************************************************************************************************


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DDTC144GUA;DI_DDTC144GUA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC144GUA  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
*****************************************************************************************************************************************


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC144TCA;DI_DDTC144TCA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC144TCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC144TE;DI_DDTC144TE;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC144TE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC144VCA;DI_DDTC144VCA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC144VCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC144VE;DI_DDTC144VE;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC144VE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC144VUA;DI_DDTC144VUA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC144VUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC144WCA;DI_DDTC144WCA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC144WCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC144WE;DI_DDTC144WE;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC144WE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC144WUA;DI_DDTC144WUA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC144WUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTD113EC;DI_DDTD113EC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTD113EC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTD113EU;DI_DDTD113EU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTD113EU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTD113ZC;DI_DDTD113ZC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTD113ZC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTD113ZU;DI_DDTD113ZU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTD113ZU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTD114EC;DI_DDTD114EC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTD114EC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTD114EU;DI_DDTD114EU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTD114EU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTD114GC;DI_DDTD114GC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTD114GC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTD114GU;DI_DDTD114GU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTD114GU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTD114TC;DI_DDTD114TC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTD114TC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTD114TU;DI_DDTD114TU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTD114TU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTD122JC;DI_DDTD122JC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTD122JC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTD122JU;DI_DDTD122JU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTD122JU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTD122LC;DI_DDTD122LC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTD122LC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTD122TC;DI_DDTD122TC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTD122TC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTD123EC;DI_DDTD123EC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTD123EC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTD123EU;DI_DDTD123EU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTD123EU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTD123TC;DI_DDTD123TC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTD123TC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTD123TU;DI_DDTD123TU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTD123TU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTD123YC;DI_DDTD123YC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTD123YC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTD123YU;DI_DDTD123YU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTD123YU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTD133HC;DI_DDTD133HC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTD133HC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTD133HU;DI_DDTD133HU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTD133HU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTD142JC;DI_DDTD142JC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTD142JC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTD142JU;DI_DDTD142JU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTD142JU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTD142TC;DI_DDTD142TC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTD142TC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTD142TU;DI_DDTD142TU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTD142TU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTD143EC;DI_DDTD143EC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTD143EC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTD143EU;DI_DDTD143EU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTD143EU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTD143TC;DI_DDTD143TC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTD143TC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTD143TU;DI_DDTD143TU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTD143TU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


******************************************************************************************************************************
500mA PNP
******************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.  When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DIMD10A;DI_DIMD10A;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DIMD10A  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************
100mA NPN
******************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.  When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DIMD10A;DI_DIMD10A;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DIMD10A  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
******************************************************************************************************************************


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DCX114EH;DI_DCX114EH;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX114EH  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
********************************************************************************************************************************
***************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.

*SRC=DCX114EH;DI_DCX114EH;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX114EH  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DCX114EK;DI_DCX114EK;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX114EK  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
********************************************************************************************************************************
***************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.

*SRC=DCX114EK;DI_DCX114EK;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX114EK  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DCX114EU;DI_DCX114EU;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX114EU  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
********************************************************************************************************************************
***************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.

*SRC=DCX114EU;DI_DCX114EU;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX114EU  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DCX114TH;DI_DCX114TH;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX114TH  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
********************************************************************************************************************************
***************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.

*SRC=DCX114TH;DI_DCX114TH;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX114TH  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DCX114TK;DI_DCX114TK;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX114TK  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
********************************************************************************************************************************
***************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.

*SRC=DCX114TK;DI_DCX114TK;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX114TK  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DCX114TU;DI_DCX114TU;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX114TU  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
********************************************************************************************************************************
***************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.

*SRC=DCX114TU;DI_DCX114TU;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX114TU  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DCX114YH;DI_DCX114YH;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX114YH  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
********************************************************************************************************************************
***************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.

*SRC=DCX114YH;DI_DCX114YH;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX114YH  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DCX122TH;DI_DCX122TH;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX122TH  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
********************************************************************************************************************************
***************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.

*SRC=DCX122TH;DI_DCX122TH;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX122TH  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DCX123JK;DI_DCX123JK;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX123JK  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
********************************************************************************************************************************
***************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.

*SRC=DCX123JK;DI_DCX123JK;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX123JK  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DCX123JU;DI_DCX123JU;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX123JU  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
********************************************************************************************************************************
***************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.

*SRC=DCX123JU;DI_DCX123JU;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX123JU  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DCX124EH;DI_DCX124EH;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX124EH  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
********************************************************************************************************************************
***************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.

*SRC=DCX124EH;DI_DCX124EH;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX124EH  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DCX124EK;DI_DCX124EK;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX124EK  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
********************************************************************************************************************************
***************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.

*SRC=DCX124EK;DI_DCX124EK;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX124EK  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DCX124EU;DI_DCX124EU;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX124EU  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
********************************************************************************************************************************
***************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.

*SRC=DCX124EU;DI_DCX124EU;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX124EU  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DCX142JH;DI_DCX142JH;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX142JH  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
********************************************************************************************************************************
***************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.

*SRC=DCX142JH;DI_DCX142JH;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX142JH  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DCX142TH;DI_DCX142TH;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX142TH  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
********************************************************************************************************************************
***************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.

*SRC=DCX142TH;DI_DCX142TH;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX142TH  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DCX143EH;DI_DCX143EH;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX143EH  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
********************************************************************************************************************************
***************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.

*SRC=DCX143EH;DI_DCX143EH;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX143EH  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DCX143TH;DI_DCX143TH;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX143TH  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
********************************************************************************************************************************
***************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.

*SRC=DCX143TH;DI_DCX143TH;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX143TH  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DCX143TK;DI_DCX143TK;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX143TK  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
********************************************************************************************************************************
***************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.

*SRC=DCX143TK;DI_DCX143TK;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX143TK  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DCX143TU;DI_DCX143TU;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX143TU  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
********************************************************************************************************************************
***************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.

*SRC=DCX143TU;DI_DCX143TU;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX143TU  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DCX144EH;DI_DCX144EH;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX144EH  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
********************************************************************************************************************************
***************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.

*SRC=DCX144EH;DI_DCX144EH;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX144EH  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DCX144EK;DI_DCX144EK;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX144EK  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
********************************************************************************************************************************
***************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.

*SRC=DCX144EK;DI_DCX144EK;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX144EK  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DCX144EU;DI_DCX144EU;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX144EU  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
********************************************************************************************************************************
***************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.

*SRC=DCX144EU;DI_DCX144EU;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX144EU  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDA114EK;DI_DDA114EK;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDA114EK  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDA114EU;DI_DDA114EU;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDA114EU  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDA114TH;DI_DDA114TH;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDA114TH  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDA114TK;DI_DDA114TK;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDA114TK  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDA114TU;DI_DDA114TU;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDA114TU  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDA114YH;DI_DDA114YH;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDA114YH  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDA114YK;DI_DDA114YK;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDA114YK  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDA114YU;DI_DDA114YU;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDA114YU  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDA122LH;DI_DDA122LH;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDA122LH  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDA122LU;DI_DDA122LU;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDA122LU  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDA122TH;DI_DDA122TH;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDA122TH  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDA122TU;DI_DDA122TU;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDA122TU  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDA123JH;DI_DDA123JH;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDA123JH  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDA123JK;DI_DDA123JK;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDA123JK  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDA124EH;DI_DDA124EH;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDA124EH  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDA124EK;DI_DDA124EK;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDA124EK  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDA124EU;DI_DDA124EU;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDA124EU  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDA142JH;DI_DDA142JH;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDA142JH  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDA142JU;DI_DDA142JU;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDA142JU  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDA142TH;DI_DDA142TH;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDA142TH  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDA142TU;DI_DDA142TU;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDA142TU  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDA143EH;DI_DDA143EH;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDA143EH  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDA143TH;DI_DDA143TH;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDA143TH  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDA143TK;DI_DDA143TK;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDA143TK  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDA143TU;DI_DDA143TU;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDA143TU  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDA144EH;DI_DDA144EH;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDA144EH  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDA144EK;DI_DDA144EK;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDA144EK  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDA144EU;DI_DDA144EU;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDA144EU  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DDC114EH;DI_DDC114EH;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDC114EH  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
*****************************************************************************************************************************************


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DDC114YU;DI_DDC114YU;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDC114YU  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
*****************************************************************************************************************************************


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DDC122LH;DI_DDC122LH;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDC122LH  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
*****************************************************************************************************************************************


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DDC122TH;DI_DDC122TH;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDC122TH  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
*****************************************************************************************************************************************


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DDC122TU;DI_DDC122TU;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDC122TU  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
*****************************************************************************************************************************************


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DDC124EH;DI_DDC124EH;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDC124EH  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
*****************************************************************************************************************************************


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DDC124EU;DI_DDC124EU;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDC124EU  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
*****************************************************************************************************************************************


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DDC142JH;DI_DDC142JH;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDC142JH  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
*****************************************************************************************************************************************


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DDC142JU;DI_DDC142JU;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDC142JU  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
*****************************************************************************************************************************************


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DDC142TH;DI_DDC142TH;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDC142TH  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
*****************************************************************************************************************************************


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DDC142TU;DI_DDC142TU;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDC142TU  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
*****************************************************************************************************************************************


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DDC143EH;DI_DDC143EH;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDC143EH  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
*****************************************************************************************************************************************


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DDC143TU;DI_DDC143TU;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDC143TU  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
*****************************************************************************************************************************************


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DDC144EH;DI_DDC144EH;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDC144EH  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
*****************************************************************************************************************************************


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DDC144EU;DI_DDC144EU;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDC144EU  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
*****************************************************************************************************************************************


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA113TCA;DI_DDTA113TCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA113TCA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA113TE;DI_DDTA113TE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA113TE  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA113TUA;DI_DDTA113TUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA113TUA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA113ZCA;DI_DDTA113ZCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA113ZCA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA113ZE;DI_DDTA113ZE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA113ZE  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA113ZUA;DI_DDTA113ZUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA113ZUA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA114ECA;DI_DDTA114ECA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA114ECA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA114EE;DI_DDTA114EE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA114EE  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA114EUA;DI_DDTA114EUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA114EUA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA114GCA;DI_DDTA114GCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA114GCA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA114GE;DI_DDTA114GE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA114GE  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA114GUA;DI_DDTA114GUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA114GUA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DDC114EU;DI_DDC114EU;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDC114EU  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
*****************************************************************************************************************************************


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DDC114TH;DI_DDC114TH;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDC114TH  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
*****************************************************************************************************************************************


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DDC114TU;DI_DDC114TU;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDC114TU  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
*****************************************************************************************************************************************


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DDC123JH;DI_DDC123JH;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDC123JH  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
*****************************************************************************************************************************************


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DDC123JU;DI_DDC123JU;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDC123JU  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
*****************************************************************************************************************************************


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA114TCA;DI_DDTA114TCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA114TCA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA114TE;DI_DDTA114TE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA114TE  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA114TUA;DI_DDTA114TUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA114TUA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA114WCA;DI_DDTA114WCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA114WCA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA114WE;DI_DDTA114WE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA114WE  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA114WUA;DI_DDTA114WUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA114WUA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA114YCA;DI_DDTA114YCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA114YCA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA114YE;DI_DDTA114YE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA114YE  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


*SRC=DDTA114YLP;;BJTs PNP; Si;  50.0V  0.100A  250MHz   Diodes, Inc. 
.MODEL   PNP (IS=10.2f NF=1.00 BF=1.14k VAF=127
+ IKF=14.7m ISE=25.1p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.150 RE=54.2m RB=0.217 RC=21.7m
+ XTB=1.5 CJE=30.8p VJE=1.10 MJE=0.500 CJC=9.94p VJC=0.300
+ MJC=0.300 TF=552p TR=95.0n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA114YUA;DI_DDTA114YUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA114YUA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA115ECA;DI_DDTA115ECA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA115ECA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA115EE;DI_DDTA115EE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA115EE  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA115EUA;DI_DDTA115EUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA115EUA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA115GCA;DI_DDTA115GCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA115GCA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA115GE;DI_DDTA115GE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA115GE  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA115GUA;DI_DDTA115GUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA115GUA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA115TCA;DI_DDTA115TCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA115TCA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA115TE;DI_DDTA115TE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA115TE  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA115TUA;DI_DDTA115TUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA115TUA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA122LE;DI_DDTA122LE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA122LE  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA122LU;DI_DDTA122LU;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA122LU  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA122TE;DI_DDTA122TE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA122TE  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA122TU;DI_DDTA122TU;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA122TU  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA123ECA;DI_DDTA123ECA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA123ECA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA123EE;DI_DDTA123EE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA123EE  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA123EUA;DI_DDTA123EUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA123EUA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDA114EH;DI_DDA114EH;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDA114EH  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA123JCA;DI_DDTA123JCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA123JCA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA123JE;DI_DDTA123JE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA123JE  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA123JUA;DI_DDTA123JUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA123JUA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA123TCA;DI_DDTA123TCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA123TCA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA123TE;DI_DDTA123TE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA123TE  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA123TUA;DI_DDTA123TUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA123TUA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA123YCA;DI_DDTA123YCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA123YCA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA123YE;DI_DDTA123YE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA123YE  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA123YUA;DI_DDTA123YUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA123YUA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA124ECA;DI_DDTA124ECA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA124ECA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA124EE;DI_DDTA124EE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA124EE  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA124EUA;DI_DDTA124EUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA124EUA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA124GCA;DI_DDTA124GCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA124GCA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA124GE;DI_DDTA124GE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA124GE  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA124GUA;DI_DDTA124GUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA124GUA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA124TCA;DI_DDTA124TCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA124TCA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA124TE;DI_DDTA124TE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA124TE  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA124TUA;DI_DDTA124TUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA124TUA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA124XCA;DI_DDTA124XCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA124XCA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA124XE;DI_DDTA124XE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA124XE  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA124XUA;DI_DDTA124XUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA124XUA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA125TCA;DI_DDTA125TCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA125TCA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA125TE;DI_DDTA125TE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA125TE  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA125TUA;DI_DDTA125TUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA125TUA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA142JE;DI_DDTA142JE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA142JE  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA142JU;DI_DDTA142JU;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA142JU  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA142TE;DI_DDTA142TE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA142TE  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA142TU;DI_DDTA142TU;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA142TU  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA143ECA;DI_DDTA143ECA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA143ECA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA143EE;DI_DDTA143EE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA143EE  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA143EUA;DI_DDTA143EUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA143EUA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA143FCA;DI_DDTA143FCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA143FCA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA143FE;DI_DDTA143FE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA143FE  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA143FUA;DI_DDTA143FUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA143FUA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA143TCA;DI_DDTA143TCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA143TCA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA143TE;DI_DDTA143TE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA143TE  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA143TUA;DI_DDTA143TUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA143TUA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA143XCA;DI_DDTA143XCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA143XCA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA143XE;DI_DDTA143XE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA143XE  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA143XUA;DI_DDTA143XUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA143XUA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA143ZCA;DI_DDTA143ZCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA143ZCA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA143ZE;DI_DDTA143ZE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA143ZE  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA143ZUA;DI_DDTA143ZUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA143ZUA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA144ECA;DI_DDTA144ECA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA144ECA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA144EE;DI_DDTA144EE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA144EE  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA144EUA;DI_DDTA144EUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA144EUA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA144GCA;DI_DDTA144GCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA144GCA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA144GE;DI_DDTA144GE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA144GE  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA144GUA;DI_DDTA144GUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA144GUA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA144TCA;DI_DDTA144TCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA144TCA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA144TE;DI_DDTA144TE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA144TE  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA144TUA;DI_DDTA144TUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA144TUA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA144VCA;DI_DDTA144VCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA144VCA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA144VE;DI_DDTA144VE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA144VE  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA144VUA;DI_DDTA144VUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA144VUA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA144WCA;DI_DDTA144WCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA144WCA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA144WE;DI_DDTA144WE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA144WE  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTA144WUA;DI_DDTA144WUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTA144WUA  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTB113EC;DI_DDTB113EC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTB113EC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTB113EU;DI_DDTB113EU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTB113EU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTB113ZC;DI_DDTB113ZC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTB113ZC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTB113ZU;DI_DDTB113ZU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTB113ZU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTB114EC;DI_DDTB114EC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTB114EC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTB114EU;DI_DDTB114EU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTB114EU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTB114GC;DI_DDTB114GC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTB114GC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTB114GU;DI_DDTB114GU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTB114GU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTB114TC;DI_DDTB114TC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTB114TC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTB114TU;DI_DDTB114TU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTB114TU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTB122JC;DI_DDTB122JC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTB122JC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTB122JU;DI_DDTB122JU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTB122JU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTB122LC;DI_DDTB122LC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTB122LC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTB122LU;DI_DDTB122LU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTB122LU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTB122TC;DI_DDTB122TC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTB122TC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTB122TU;DI_DDTB122TU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTB122TU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTB123EC;DI_DDTB123EC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTB123EC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTB123EU;DI_DDTB123EU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTB123EU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTB123TC;DI_DDTB123TC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTB123TC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTB123TU;DI_DDTB123TU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTB123TU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTB123YC;DI_DDTB123YC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTB123YC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTB123YU;DI_DDTB123YU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTB123YU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTB133HC;DI_DDTB133HC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTB133HC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTB133HU;DI_DDTB133HU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTB133HU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTB142JC;DI_DDTB142JC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTB142JC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTB142JU;DI_DDTB142JU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTB142JU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTB142TC;DI_DDTB142TC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTB142TC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTB142TU;DI_DDTB142TU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTB142TU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTB143EU;DI_DDTB143EU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTB143EU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTB143TC;DI_DDTB143TC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTB143TC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


**************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be 
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- 
20% for R2/R1 ratio tolerance.

*SRC=DDTB143TU;DI_DDTB143TU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DDTB143TU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
******************************************************************************************************************************


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC113TCA;DI_DDTC113TCA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC113TCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC113TE;DI_DDTC113TE;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC113TE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


*SRC=DDTA113TLP;;BJTs PNP; Si;  50.0V  0.100A  250MHz   Diodes, Inc. -
.MODEL   PNP (IS=10.2f NF=1.00 BF=415 VAF=127
+ IKF=74.6m ISE=82.5f NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.120 RE=0.615 RB=2.46 RC=0.246
+ XTB=1.5 CJE=30.8p VJE=1.10 MJE=0.500 CJC=9.94p VJC=0.300
+ MJC=0.300 TF=479p TR=97.1n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC113TUA;DI_DDTC113TUA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC113TUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC113ZCA;DI_DDTC113ZCA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC113ZCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC113ZE;DI_DDTC113ZE;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC113ZE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC113ZUA;DI_DDTC113ZUA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC113ZUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC114EE;DI_DDTC114EE;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC114EE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DDTC114EUA;DI_DDTC114EUA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC114EUA  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
*****************************************************************************************************************************************


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DDTC114GUA;DI_DDTC114GUA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC114GUA  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
*****************************************************************************************************************************************


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC114TCA;DI_DDTC114TCA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC114TCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC114TE;DI_DDTC114TE;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC114TE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC114TUA;DI_DDTC114TUA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC114TUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC114WCA;DI_DDTC114WCA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC114WCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC114WE;DI_DDTC114WE;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC114WE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC114WUA;DI_DDTC114WUA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC114WUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC114YCA;DI_DDTC114YCA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC114YCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC114YE;DI_DDTC114YE;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC114YE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC114YUA;DI_DDTC114YUA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC114YUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC115EE;DI_DDTC115EE;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC115EE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DDTC115EUA;DI_DDTC115EUA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC115EUA  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
*****************************************************************************************************************************************


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC115TCA;DI_DDTC115TCA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC115TCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


Note:  The following SPICE model is for the transistor element.  
When applying this SPICE model to your circuit simulation be certain to 
add R1 and/or R2 values per the table found on sheet 1 of the data sheet. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DDTC144TUA;DI_DDTC144TUA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DDTC144TUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DCX114YU;DI_DCX114YU;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX114YU  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
********************************************************************************************************************************
***************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.

*SRC=DCX114YU;DI_DCX114YU;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX114YU  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DCX114YK;DI_DCX114YK;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX114YK  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
********************************************************************************************************************************
***************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.

*SRC=DCX114YK;DI_DCX114YK;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX114YK  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DCX122LH;DI_DCX122LH;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX122LH  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
********************************************************************************************************************************
***************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.

*SRC=DCX122LH;DI_DCX122LH;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX122LH  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********


******************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio 
tolerance.

*SRC=DCX123JH;DI_DCX123JH;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX123JH  PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
********************************************************************************************************************************
***************************************************************************************************************************************
Note:  The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.

*SRC=DCX123JH;DI_DCX123JH;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DCX123JH  NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********


*SRC=DMMT3904W;DI_DMMT3904W;BJTs NPN; Si;  40.0V  0.200A  347MHz   Diodes
Inc. Matched Transistor
.MODEL DI_DMMT3904W  NPN (IS=20.3f NF=1.00 BF=274 VAF=114
+ IKF=36.4m ISE=6.99p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=90.0m RE=0.657 RB=2.63 RC=0.263
+ XTB=1.5 CJE=8.29p VJE=1.10 MJE=0.500 CJC=7.10p VJC=0.300
+ MJC=0.300 TF=426p TR=71.3n EG=1.12 )


*****************************************************************************************************************************************
*SRC=DMMT3906;DI_DMMT3906;BJTs PNP; Si;  40.0V  0.200A  257MHz   Diodes Inc. Matched BJTs - Single device of dual
.MODEL DI_DMMT3906  PNP (IS=20.3f NF=1.00 BF=437 VAF=114
+ IKF=44.6m ISE=6.81p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.120 RE=1.16 RB=4.63 RC=0.463
+ XTB=1.5 CJE=23.5p VJE=1.10 MJE=0.500 CJC=10.7p VJC=0.300
+ MJC=0.300 TF=504p TR=94.3n EG=1.12 )
*****************************************************************************************************************************************


*SRC=DMMT3906W;DI_DMMT3906W;BJTs PNP; Si;  40.0V  0.200A  257MHz   Diodes, Inc. PNP 
.MODEL DI_DMMT3906W  PNP (IS=20.3f NF=1.00 BF=274 VAF=114 
+ IKF=36.4m ISE=6.99p NE=2.00 BR=4.00 NR=1.00 
+ VAR=20.0 IKR=90.0m RE=1.01 RB=4.03 RC=0.403 
+ XTB=1.5 CJE=12.1p VJE=1.10 MJE=0.500 CJC=10.7p VJC=0.300 
+ MJC=0.300 TF=531p TR=85.6n EG=1.12 )


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=10FEB2011
*VERSION=2
*PIN_ORDER         
* 1=C1    6=E1
* 2=B1    5=E2
* 3=B2    4=C2
*
.SUBCKT DMMT5401 1 2 3 4 5 6
Q1 1 2 6 Mod1
Q2 4 3 5 Mod1
*
.MODEL Mod1  PNP IS=6E-14 NF=1 BF=130 VAF=360 ISE=6E-14
+ NE=1.5 NR=1 BR=6.5 VAR=37 ISC=8E-12 NC=1.35 RC=0.08 RB=1 RE=0.25
+ CJC=13E-12 MJC=0.46  VJC=0.7 CJE=63E-12 MJE=0.41 VJE=0.9 
+ TF=6.7E-10 TR=1.03E-6 XTB=1.5 QUASIMOD=1 RCO=14 GAMMA=1.5E-8
.ENDS
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=10FEB2011
*VERSION=2
*PIN_ORDER         
* 1=C1    6=E1
* 2=B1    5=E2
* 3=B2    4=C2
*
.SUBCKT DMMT5551 1 2 3 4 5 6
Q1 1 2 6 Mod1
Q2 4 3 5 Mod1
*
.MODEL Mod1  NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14
+ NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23
+ CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9
+ TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7
.ENDS
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=10FEB2011
*VERSION=2
*PIN_ORDER         
* 1=B1    6=C1
* 2=E2    5=E1
* 3=B2    4=C2
*
.SUBCKT DMMT5551S 1 2 3 4 5 6
Q1 6 1 5 Mod1
Q2 4 3 2 Mod1
*
.MODEL Mod1  NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14
+ NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23
+ CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9
+ TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7
.ENDS
*
*$


*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*DATE=18/11/2015
*VERSION=1

*PIN ORDER 1:IN 2:GND 3:OUT


.SUBCKT ZXTR2105 1 2 3 

Q1 1 4 3 ZXTRNPN
R1 1 4 13.1K TC1=-0.35m
R2 3 2 10Meg
D1 2 4 ZXTRdiode


.MODEL ZXTRNPN NPN IS=120e-11 NF=1.2 ISE=30e-15 NE=1.2 BF=200
+ VAF=10 IKF=500m ISC=2e-13 NC=1.2 BR=15 NR=1 RE=0.01
+ RB=0.1 RC=0.01 CJE=60e-12 VJE=0.55 MJE=0.36 CJC=15e-12 VJC=0.5
+ MJC=0.35 TF=1e-9 TR=4e-9  QUASIMOD=1 RCO=1 GAMMA=1.3e-9 NK=.55
+ XTB=1.4 TRE1=0.004 TRB1=0.003 TRC1=0.004


.model ZXTRdiode D(IS=3f RS=.01 N=1.05 IKF=1m CJO=.5p M=0.3 VJ=0.7
+ BV=5.44 IBV=10u XTI=12.5)


.ENDS

.SIMULATOR DEFAULT


*
*Zetex ZXGD3001E6 Spice Model v2.0 Last Revised  17/09/08
*
.SUBCKT ZXGD3001E6 1 2 3 4 5 6
*pins             Vcc, In1, Gnd, Sink, In2, Source
Q1 1 2 6 ZXGD3001N
Q2 3 5 4 ZXGD3001P
*
.MODEL ZXGD3001N NPN IS=9E-13 BF=990 NF=1 VAF=25 IKF=3.8 ISE=8E-14 NE=1.35
+ BR=410 NR=1 VAR=8 IKR=1.25 ISC=8e-14 NC=1.35 RE=0.0117 RB=0.1 RC=0.0081
+ CJE=168E-12 VJE=0.7 MJE=0.38 CJC=61E-12 VJC=0.52 MJC=0.31 TF=0.5E-9 TR=1.7e-9
+ XTB=1.4
*
.MODEL ZXGD3001P PNP IS=5.5E-13 NF=1 BF=650 VAF=20 ISE=1.9E-13
+ IKF=2.5 NE=1.53 BR=72 VAR=4.1 ISC=7E-14 NC=1.2 IKR=0.25 RC=0.010
+ RB=0.15 RE=0.006 QUASIMOD=1 RCO=0.7 GAMMA=1.7E-9 CJC=57E-12 MJC=0.35
+ VJC=0.53 CJE=168E-12 MJE=0.54 VJE=0.95 TF=0.42E-9 TR=8.4E-9 TRC1=0.005
+ TRB1=0.005 TRE1=0.005 XTB=1.4 
*
.ENDS ZXGD3001E6
*
*$
*
*                (c)  2008 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA


*TITLE=ZXGD3006 MACROMODEL
*DATE=26Jan2012
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=DIODES, SIMETRIX and PSPICE
*VERSION=1

.SUBCKT ZXGD3006 VCC IN VEE SINK SOURCE
LIN IN 6 2n
RIN 6 7 1
D1 7 8 DMOD
D2 9 7 DMOD
RI1 7 8 1000K
RI2 9 7 1000K
CI1 7 8 5.5p
CI2 9 7 5.5p
RO1 8 10 100K
R02 9 11 100K
RsourceI 10 12 1.5
RsinkI 11 13 1.5
D3 12 8 DMOD
D4 9 13 DMOD
LCC VCC 8 2n
LEE VEE 9 2n
Lsource 12 SOURCE 1n
Lsink 13 SINK 1n
G1 8 10 VALUE={1.39e-11*exp((V(7)-V(10))/.0032)*.5*(1+tanh(10*MAX(V(8)-V(7),0)))}
G2 11 9 VALUE={1.39e-11*exp((V(11)-V(7))/.0032)*.5*(1-tanh(10*MAX(V(9)-V(7),0)))}
.MODEL DMOD D(IS=8p BV=44)
.ENDS

.SIMULATOR DEFAULT

*                (c)  2011 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*TITLE=ZXGD3006 MACROMODEL
*DATE=04Feb2015
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=DIODES, SIMETRIX and PSPICE
*VERSION=1

.SUBCKT ZXGD3006E6Q VCC IN VEE SINK SOURCE
LIN IN 6 2n
RIN 6 7 1
D1 7 8 DMOD
D2 9 7 DMOD
RI1 7 8 1000K
RI2 9 7 1000K
CI1 7 8 5.5p
CI2 9 7 5.5p
RO1 8 10 100K
R02 9 11 100K
RsourceI 10 12 1.5
RsinkI 11 13 1.5
D3 12 8 DMOD
D4 9 13 DMOD
LCC VCC 8 2n
LEE VEE 9 2n
Lsource 12 SOURCE 1n
Lsink 13 SINK 1n
G1 8 10 VALUE={1.39e-11*exp((V(7)-V(10))/.0032)*.5*(1+tanh(10*MAX(V(8)-V(7),0)))}
G2 11 9 VALUE={1.39e-11*exp((V(11)-V(7))/.0032)*.5*(1-tanh(10*MAX(V(9)-V(7),0)))}
.MODEL DMOD D(IS=8p BV=44)
.ENDS

.SIMULATOR DEFAULT

*                (c)  2015 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*
*Zetex ZXGD3002E6 Spice Model v2.0 Last Revised  17/09/08
*
.SUBCKT ZXGD3002E6 1 2 3 4 5 6
*pins             Vcc, In1, Gnd, Sink, In2, Source
Q1 1 2 6 ZXGD3002N
Q2 3 5 4 ZXGD3002P
*
.MODEL ZXGD3002N NPN IS=4E-13 BF=550 NF=1 VAF=25 IKF=4.5 ISE=1E-13 NE=1.4
+ BR=120 NR=1 VAR=8 IKR=1.7 ISC=4e-13 NC=1.4 RE=0.010 RB=0.1 RC=0.0085
+ CJE=190E-12 VJE=0.67 MJE=0.345 CJC=47E-12 VJC=0.525 MJC=0.34 TF=0.53E-9 TR=8.6e-9 
+ RCO=0.29 GAMMA=0.8E-9 QUASIMOD=1 XTB=1.4
*
.MODEL ZXGD3002P PNP IS=4E-13 NF=1 BF=510 IKF=3.5 VAF=23 ISE=10E-14 NE=1.49
+ NR=1 BR=97 IKR=1 VAR=4.5 ISC=7.5e-14 NC=1.2 RE=0.0136 RB=0.12 RC=0.0094 RCO=0.9
+ GAMMA=2.5E-9 CJC=60E-12 MJC=0.33 VJC=0.51 CJE=183E-12 MJE=0.5 VJE=0.9 TF=3.4E-10
+ TR=4.5e-9 XTB=1.5 TRE1=.002 TRB1=.002 TRC1=.002 QUASIMOD=1 
*
.ENDS ZXGD3002E6
*
*$
*
*                (c)  2008 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA


*
*Zetex ZXGD3003E6 Spice Model v2.0 Last Revised   17/09/08
*
.SUBCKT ZXGD3003E6 1 2 3 4 5 6
*pins             Vcc, In1, Gnd, Sink, In2, Source
Q1 1 2 6 ZXGD3003N
Q2 3 5 4 ZXGD3003P
*
.MODEL ZXGD3003N  NPN IS=2.5E-13 NF=1 BF=600 IKF=1 VAF=51 ISE=2E-13 
+NE=1.4 NR=1 BR=150 IKR=.5 VAR=25 ISC=1e-13 NC=1.47 RB=0.5
+RE=0.055 RC=0.055 CJC=23E-12 MJC=0.33 VJC=0.75 CJE=98E-12 TF=0.8E-9 
+TR=30e-9
*
.MODEL ZXGD3003P PNP IS=2e-13 BF=550 XTB=1.4 NF=1 VAF=21 IKF=0.25 
+ ISE=1e-13 NE=1.38 BR=55 NR=1 VAR=9.9 IKR=0.25 ISC=1e-13 NC=1.18
+ RE=0.06 RB=0.7 RC=0.06 CJE=95.9e-12 VJE=0.897 MJE=0.468 CJC=43.4e-12
+ VJC=1.816 MJC=0.85 TF=495e-12 TR=25e-9 
*
.ENDS ZXGD3003E6
*
*$
*
*                (c)  2008 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA


*
*Zetex ZXGD3004E6 Spice Model v2.0 Last Revised  17/09/08
*
.SUBCKT ZXGD3004E6 1 2 3 4 5 6
*pins             Vcc, In1, Gnd, Sink, In2, Source
Q1 1 2 6 ZXGD3004N
Q2 3 5 4 ZXGD3004P
*
.MODEL ZXGD3004N NPN IS=5.1E-13 BF=480 NF=1 VAF=99 IKF=3.3 ISE=1.2E-13
+NE=1.49 BR=65 NR=1 VAR=24 IKR=1 ISC=1.1E-13 NC=1.31 RE=0.0115 RB=0.15 RC=0.012
+CJE=192E-12 VJE=0.75 MJE=0.38 CJC=35E-12 VJC=0.47 MJC=0.34 TF=0.62E-9 TR=20E-9
+RCO=1.9 GAMMA=1E-8 QUASIMOD=1 XTB=1.35 TRE1=0.005 TRB1=0.005 TRC1=0.005
*
.MODEL ZXGD3004P PNP IS=4E-13 NF=1 BF=470 IKF=3.5 VAF=23 ISE=10E-14
+ NE=1.49 NR=1 BR=97 IKR=1 VAR=4.5 ISC=7.5e-14 NC=1.2 RE=0.014 RB=0.12
+ RC=0.0111 RCO=0.88 GAMMA=0.6E-9 CJC=58E-12 MJC=0.41 VJC=0.62 CJE=183E-12
+ MJE=0.5 VJE=0.95 TF=3.9E-10 TR=7.8e-9 XTB=1.5 TRE1=0.003 TRB1=0.003
+ TRC1=0.003 QUASIMOD=1
*
.ENDS ZXGD3004E6
*
*$
*
*                (c)  2008 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA


*TITLE=ZXGD3005 MACROMODEL
*DATE=26Jan2012
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=DIODES, SIMETRIX and PSPICE
*VERSION=1

.SUBCKT ZXGD3005 VCC IN VEE SINK SOURCE
LIN IN 6 2n
RIN 6 7 1
D1 7 8 DMOD
D2 9 7 DMOD
RI1 7 8 1000K
RI2 9 7 1000K
CI1 7 8 5.5p
CI2 9 7 5.5p
RO1 8 10 100K
R02 9 11 100K
RsourceI 10 12 1.5
RsinkI 11 13 1.5
D3 12 8 DMOD
D4 9 13 DMOD
LCC VCC 8 2n
LEE VEE 9 2n
Lsource 12 SOURCE 1n
Lsink 13 SINK 1n
G1 8 10 VALUE={1.39e-11*exp((V(7)-V(10))/.0032)*.5*(1+tanh(10*MAX(V(8)-V(7),0)))}
G2 11 9 VALUE={1.39e-11*exp((V(11)-V(7))/.0032)*.5*(1-tanh(10*MAX(V(9)-V(7),0)))}
.MODEL DMOD D(IS=8p BV=30)
.ENDS

.SIMULATOR DEFAULT

*                (c)  2011 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*DIODES_INC_SPICE_MODEL
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=29Jul2016
*VERSION=1

** PIN ORDER 1=Vcc 2=IN 3=Vee 4=SINK 5=NC 6=SOURCE
.SUBCKT ZXGD3009DY 1 2 3 4 5 6
Q1 10 2 60 N
Q2 30 2 40 P
L1 1 10 1p
L2 3 30 1p
L3 4 40 100p
L4 6 60 100p
.MODEL N NPN(IS=6E-14 BF=500 NF=.98 ISE=1E-14 NE=1.25 ISC=3.3E-14 BR=15 NR=1 NC=1.12 CJE=36.592p VJE=.75 MJE=.37 CJC=9.674p VJC=.5 MJC=.33 VAF=28 IKF=1 RC=.1 RE=.05 NK=.808)
.MODEL P PNP IS=20e-14 NF=1 ISE=5e-15 NE=1.3 BF=350
+ VAF=26 IKF=1 ISC=9e-15 NC=1.03 BR=15 NR=1 VAR=5.7 IKR=0.6 RE=0.067
+ RB=0.33 RC=0.012 CJE=36.99e-12 VJE=0.75 MJE=0.41 CJC=13.96e-12 VJC=0.5
+ MJC=0.33 TF=8e-10 TR=5.6e-9 QUASIMOD=1 RCO=0.66 GAMMA=1.3e-9 NK=.71
+ XTB=1.5 TRE1=0.004 TRB1=0.003 TRC1=0.004
.ENDS

*                (c)  2016 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*DIODES_INC_SPICE_MODEL
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=29Jul2016
*VERSION=1

** PIN ORDER 1=Vcc 2=IN 3=Vee 4=SINK 5=NC 6=SOURCE
.SUBCKT ZXGD3009E6 1 2 3 4 5 6
Q1 10 2 60 N
Q2 30 2 40 P
L1 1 10 1p
L2 3 30 1p
L3 4 40 100p
L4 6 60 100p
.MODEL N NPN(IS=6E-14 BF=500 NF=.98 ISE=1E-14 NE=1.25 ISC=3.3E-14 BR=15 NR=1 NC=1.12 CJE=36.592p VJE=.75 MJE=.37 CJC=9.674p VJC=.5 MJC=.33 VAF=28 IKF=1 RC=.1 RE=.05 NK=.808)
.MODEL P PNP IS=20e-14 NF=1 ISE=5e-15 NE=1.3 BF=350
+ VAF=26 IKF=1 ISC=9e-15 NC=1.03 BR=15 NR=1 VAR=5.7 IKR=0.6 RE=0.067
+ RB=0.33 RC=0.012 CJE=36.99e-12 VJE=0.75 MJE=0.41 CJC=13.96e-12 VJC=0.5
+ MJC=0.33 TF=8e-10 TR=5.6e-9 QUASIMOD=1 RCO=0.66 GAMMA=1.3e-9 NK=.71
+ XTB=1.5 TRE1=0.004 TRB1=0.003 TRC1=0.004
.ENDS

*                (c)  2016 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL




*ZETEX FMMT413 Spice Model v1.0 Last Revised 15/10/04
    *
    .SUBCKT  FMMT413 16 15 14
    *Pins_____________C__B__E
    Q_Q1          9  8  7 QMOD_1
    R_R1          5  6  100  
    R_R2          5  4  100
    R_R3          12  3  100  
    R_R4          3  1  500  
    R_R5          10  2  2k  
    R_R6          10  11  1.5  
    D_D1          10  5 DZ20
    D_D2          4  2 DZ500
    D_D3          10  3 DZ200
    D_D4          1  2 DZ500
    D_D5          7  9 DZ300
    C_C1          10  2  20p  
    S_S1         13  11  2  10  SMOD1 
    S_S2          9  13  2  10  SMOD2 
    S_S3          8  10  2  10  SMOD3 
    V_H1          7  10  0
    H1 6 10  V_H1 50 
    E1 12 10 11 10 10
    L_L1          9  16  1nH  
    L_L2          15  8  2nH  
    L_L3          10  14  2nH  
    .Model QMOD_1 NPN IS =1.8E-14 ISE=5.0E-14 NF =.9955 NE =1.46 
    +BF =400 BR =35.5 IKF=.14 IKR=.03 ISC=1.72E-13 NC =1.27 NR =1.005
    +RB =.56 RE =.6 RC =.25 VAF=80 VAR=12.5 CJE=13E-12 CJC=4E-12 
    +VJC=.54 MJC=.33 TF =.64E-9 TR =50.72E-9
    .Model DZ20 D Is=1E-15  Bv=20 Ibv=100u
    .Model DZ200 D Is=1E-15  Bv=200 Ibv=100u
    .Model DZ300 D Is=1E-15 Rs=0.1 Bv=300 Ibv=100u
    .Model DZ500 D Is=1E-15 N=10 Bv=500 Ibv=100u
    .Model SMOD1 VSWITCH Roff=1e10 Ron=0.05 Voff=4.3 Von=4.6
    .Model SMOD2 VSWITCH Roff=1e3 Ron=.5 Voff=4.5 Von=9
    .Model SMOD3 VSWITCH Roff=1e10 Ron=0.1 Voff=20 Von=25
    .ENDS FMMT413
    *
    *$
    *


*ZETEX FMMT415 Spice Model v1.0 Last Revised 14/01/03
    *
    .SUBCKT FMMT415 16 15 14
    *Pins______________C__B__E
    Q_Q1          9  8  7 QMOD_1
    R_R1          5  6  100  
    R_R2          5  4  100
    R_R3          12  3  100  
    R_R4          3  1  500  
    R_R5          10  2  2k  
    R_R6          10  11  2
    D_D1          10  5 DZ20
    D_D2          4  2 DZ500
    D_D3          10  3 DZ200
    D_D4          1  2 DZ500
    D_D5          7  9 DZ300
    C_C1          10  2  20p  
    S_S1         13  11  2  10  SMOD1 
    S_S2          9  13  2  10  SMOD2 
    S_S3          8  10  2  10  SMOD3 
    V_H1          7  10  0
    H1 6 10  V_H1 50 
    E1 12 10 11 10 10
    L_L1          9  16  1nH  
    L_L2          15  8  2nH  
    L_L3          10  14  2nH  
    .Model QMOD_1 NPN IS =3E-14 NF =1 BF =110 IKF=0.4
    +VAF=1900 ISE=1E-12 NE =1.6
    +NR =1 BR =7 IKR=0.2 VAR=75 ISC=1e-10 NC =1.9
    +RB =0.4 RE =0.1 RC =0.1
    +CJC=10.9E-12 MJC=0.347 VJC=0.476 CJE=82.6E-12
    +TF =1.3E-9 TR =2.3e-7
    .Model DZ20 D Is=1E-15  Bv=20 Ibv=100u
    .Model DZ200 D Is=1E-15  Bv=200 Ibv=100u
    .Model DZ300 D Is=1E-15 Rs=0.1 Bv=300 Ibv=100u
    .Model DZ500 D Is=1E-15 N=10 Bv=500 Ibv=100u
    .Model SMOD1 VSWITCH Roff=1e10 Ron=0.1 Voff=4.3 Von=4.6
    .Model SMOD2 VSWITCH Roff=1e3 Ron=1.0 Voff=4.5 Von=9
    .Model SMOD3 VSWITCH Roff=1e10 Ron=0.1 Voff=20 Von=25
    .ENDS FMMT415
    *
    *$
    *


*ZETEX FMMT417 Spice Model v2.0 Last Revised 23/03/07
    *
    .SUBCKT FMMT417 16 15 14
    *Pins______________C__B__E
    Q_Q1          9  8  7 QMOD_1
    R_R1          5  6  100  
    R_R2          5  4  100
    R_R3          12  3  100  
    R_R4          3  1  500  
    R_R5          10  2  2k  
    R_R6          10  11  2
    D_D1          10  5 DZ20
    D_D2          4  2 DZ500
    D_D3          10  3 DZ200
    D_D4          1  2 DZ500
    D_D5          7  9 DZ350
    C_C1          10  2  20p  
    S_S1         13  11  2  10  SMOD1 
    S_S2          9  13  2  10  SMOD2 
    S_S3          8  10  2  10  SMOD3 
    V_H1          7  10  0
    H1 6 10  V_H1 50 
    E1 12 10 11 10 10
    L_L1          9  16  1nH  
    L_L2          15  8  2nH  
    L_L3          10  14  2nH  
    .model QMOD_1 NPN IS =3E-14 NF =1 BF =110 IKF=0.4
    +VAF=1900 ISE=1E-12 NE =1.6
    +NR =1 BR =7 IKR=0.2 VAR=75 ISC=1e-10 NC =1.9
    +RB =0.4 RE =0.1 RC =0.1
    +CJC=10.9E-12 MJC=0.347 VJC=0.476 CJE=82.6E-12
    +TF =1.3E-9 TR =2.3e-7
    .model DZ20 D Is=1E-15  Bv=20 Ibv=100u
    .model DZ200 D Is=1E-15  Bv=200 Ibv=100u
    .model DZ350 D Is=1E-15 Rs=0.1 Bv=350 Ibv=100u
    .model DZ500 D Is=1E-15 N=10 Bv=500 Ibv=100u
    .model SMOD1 VSWITCH Roff=1e10 Ron=0.1 Voff=4.3 Von=4.6
    .model SMOD2 VSWITCH Roff=1e3 Ron=1.0 Voff=4.5 Von=9
    .model SMOD3 VSWITCH Roff=1e10 Ron=0.1 Voff=20 Von=25
    .ENDS FMMT417
    *
    *$
    *


*ZETEX ZTX415 Spice Model v1.0 Last Revised 14/01/03
    *
    .SUBCKT ZTX415 16 15 14
    *Pins______________C__B__E
    Q_Q1          9  8  7 QMOD_1
    R_R1          5  6  100  
    R_R2          5  4  100
    R_R3          12  3  100  
    R_R4          3  1  500  
    R_R5          10  2  2k  
    R_R6          10  11  2
    D_D1          10  5 DZ20
    D_D2          4  2 DZ500
    D_D3          10  3 DZ200
    D_D4          1  2 DZ500
    D_D5          7  9 DZ300
    C_C1          10  2  20p  
    S_S1         13  11  2  10  SMOD1 
    S_S2          9  13  2  10  SMOD2 
    S_S3          8  10  2  10  SMOD3 
    V_H1          7  10  0
    H1 6 10  V_H1 50 
    E1 12 10 11 10 10
    L_L1          9  16  1nH  
    L_L2          15  8  2nH  
    L_L3          10  14  2nH  
    .Model QMOD_1 NPN IS =3E-14 NF =1 BF =110 IKF=0.4
    +VAF=1900 ISE=1E-12 NE =1.6
    +NR =1 BR =7 IKR=0.2 VAR=75 ISC=1e-10 NC =1.9
    +RB =0.4 RE =0.1 RC =0.1
    +CJC=10.9E-12 MJC=0.347 VJC=0.476 CJE=82.6E-12
    +TF =1.3E-9 TR =2.3e-7
    .Model DZ20 D Is=1E-15  Bv=20 Ibv=100u
    .Model DZ200 D Is=1E-15  Bv=200 Ibv=100u
    .Model DZ300 D Is=1E-15 Rs=0.1 Bv=300 Ibv=100u
    .Model DZ500 D Is=1E-15 N=10 Bv=500 Ibv=100u
    .Model SMOD1 VSWITCH Roff=1e10 Ron=0.1 Voff=4.3 Von=4.6
    .Model SMOD2 VSWITCH Roff=1e3 Ron=1.0 Voff=4.5 Von=9
    .Model SMOD3 VSWITCH Roff=1e10 Ron=0.1 Voff=20 Von=25
    .ENDS ZTX415
    *
    *$
    *


*ZETEX BST52 Spice Model v1.0 Last Revised 2/8/2004
    *
    .SUBCKT BST52 1 2 3
    *              C B E
    Q1 1 2 4 SUB614
    Q2 1 4 3 SUB614 5.39
    .ENDS BST52
    *
    .MODEL SUB614 NPN IS =1.575E-14 NF =1.00 BF =280 IKF=0.08 VAF=284 
    +             ISE=5.8853E-15 NE =1.3517 NR =1.0469 BR =11 IKR=0.2 
    +             VAR=13 ISC=5.3795E-14 NC =1.257 RB =0.22 RE =0.375 
    +             RC =0.40 CJC=3.6E-12 MJC=0.3393 VJC=0.4127 
    +             CJE=23.7E-12 TF =1.73E-9 TR =260E-9
    *
    *$
    *


*ZETEX FCX605 Spice Model v1.0 Last Revised 27/04/05
    *
    .SUBCKT FCX605 1 2 3
    *              C B E
    Q1 1 2 4 SUB605
    Q2 1 4 3 SUB605 3.46
    *
    .MODEL SUB605 NPN IS=4.8E-14 BF=170 VAF=542 NF=1.0039 IKF=0.2 ISE=1.5E-14
    +NE=1.55 BR=12 VAR=20 NR=1.007 IKR=0.35 ISC=7.486E-14 NC=1.0984 RB=0.17 RE=0.3
    +RC=0.14 CJE=81E-12 CJC=10.8E-12 VJC=0.58 MJC=0.41 TF=1.024E-9 TR=700E-9
    .ENDS FCX605
    *
    *$
    *


*
*Zetex FCX705 Spice Model v1.0 Last Revised 12/08/08
*
.SUBCKT FCX705 1 2 3
*              C B E
Q1 1 2 4 SUB705
Q2 1 4 3 SUB705 4
*
.MODEL SUB705 PNP IS=3.35584E-14 BF=85 VAF=212 NF=1.002 IKF=0.817
+ ISE=3.6E-13 NE=4.1 BR=24 VAR=6 NR=0.999 IKR=0.114 ISC=1.406E-13 NC=1.13
+ RB=1.1 RE=0.4 RC=0.0339 CJE=100E-12 CJC=37E-12 VJC=1.045 MJC=0.595
.ENDS FCX705
*
*$
*
*                (c)  2008 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA


*ZETEX FMMT38C Spice Model v1.0 Last Revised 12/6/02
    *
    .SUBCKT FMMT38C 1 2 3
    *               C B E
    Q1 1 2 4 SUB38C
    Q2 1 4 3 SUB38C 12.75
    *
    .MODEL SUB38C NPN IS=1.1E-14 ISE=7.1E-15 NF=1.012 NE=1.4758 
    +BF=220 IKF=.12 BR=15 IKR=.05 RE=1.3 RC=.5 RB=.3 VAF=150 
    +CJE=14.5E-12 CJC=4.14E-12 VJC=.515 MJC=.26 TF=1.15E-9 TR=75E-9
    .ENDS FMMT38C
    *
    *$
    *


*ZETEX FMMT614 Spice Model v1.0 Last Revised 2/8/2004
    *
    .SUBCKT FMMT614 1 2 3
    *              C B E
    Q1 1 2 4 SUB614
    Q2 1 4 3 SUB614 5.39
    .ENDS FMMT614
    *
    .MODEL SUB614 NPN IS =1.575E-14 NF =1.00 BF =280 IKF=0.08 VAF=284 
    +             ISE=5.8853E-15 NE =1.3517 NR =1.0469 BR =11 IKR=0.2 
    +             VAR=13 ISC=5.3795E-14 NC =1.257 RB =0.22 RE =0.375 
    +             RC =0.40 CJC=3.6E-12 MJC=0.3393 VJC=0.4127 
    +             CJE=23.7E-12 TF =1.73E-9 TR =260E-9
    *
    *$
    *


*ZETEX FMMT734 Spice Model v1.0 Last Revised 29/8/2006
    *
    .SUBCKT FMMT734 1 2 3
    *              C B E
    Q1 1 2 4 SUB734 0.4
    Q2 1 4 3 SUB734 2
    *
    .MODEL SUB734 PNP IS =2E-13 NF =1 BF =330 IKF=0.8 
    +VAF=44 ISE=1E-13 NE =1.4 RCO=4.5 GAMMA=5E-9 
    +NR =1 BR =20 IKR=0.2 VAR=10 ISC=2e-13 NC =1.25 
    +RB =0.15 RE =0.15 RC =0.2 QUASIMOD=1
    +CJC=36E-12 MJC=0.45 VJC=0.75 CJE=110E-12 
    +TF =0.8E-9 TR =10e-9 XTB=1.4
    .ENDS FMMT734
    *
    *$
    *


*ZETEX FMMTA13 Spice Model v1.1 Last Revised 6/1/03
    *
    .SUBCKT FMMTA13 1 2 3
    *               C B E
    Q1 1 2 4 SUB38B
    Q2 1 4 3 SUB38B 12.75
    *
    .MODEL SUB38B NPN IS =1.1E-14 ISE=7.1E-15 NF =1.012 NE =1.4758 
    +BF =147 IKF=.12 BR =15 IKR=.05 RE =1.3 RC =.5 RB =.3 VAF=150 
    +CJE=14.5E-12 CJC=4.14E-12 VJC=.515 MJC=.26 TF =1.15E-9 TR =75E-9
    .ENDS FMMTA13
    *
    *$
    *


*ZETEX FMMTA14 Spice Model v1.0 Last Revised  12/6/2002
    *
    .SUBCKT FMMTA14 1 2 3
    *               C B E
    Q1 1 2 4 SUB38C
    Q2 1 4 3 SUB38C 12.75
    *
    .MODEL SUB38C NPN IS=1.1E-14 ISE=7.1E-15 NF=1.012 NE=1.4758 
    +BF=220 IKF=.12 BR=15 IKR=.05 RE=1.3 RC=.5 RB=.3 VAF=150 
    +CJE=14.5E-12 CJC=4.14E-12 VJC=.515 MJC=.26 TF=1.15E-9 TR=75E-9
    .ENDS FMMTA14
    *
    *$
    *


*ZETEX FZT600 Spice Model v1.0 Last Revised 23/12/04
    *
    .SUBCKT FZT600 1 2 3
    *               C B E
    Q1 1 2 4 SUB600
    Q2 1 4 3 SUB600 2.74
    *
    .MODEL SUB600 NPN IS=8.354E-14 BF=70 VAF=18.3 IKF=0.25 ISE=2E-13
    +NE=1.45 BR=2 VAR=6.5 NR=1 IKR=0.2 ISC=6.138E-13 NC=1.46 RB=0.5 RE=0.25
    +RC=0.3 CJE=83.7E-12 VJE=0.6868 MJE=0.3362 CJC=8.6E-12 VJC=0.3679
    +MJC=0.3607 TF=1E-9 TR=1800E-9
    .ENDS FZT600
    *
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=21JAN2011
*VERSION=1
*PINS              C B E
*
.SUBCKT FZT600B 1 2 3
Q1 1 2 4 SUB601B
Q2 1 4 3 SUB601B 2.74
*
.MODEL SUB601B NPN IS=8.354E-14 BF=130 VAF=18.3 IKF=0.2 ISE=2E-13
+NE=1.45 BR=2 VAR=6.5 NR=1 IKR=0.2 ISC=6.138E-13 NC=1.46 RB=0.5 RE=0.25
+RC=0.3 CJE=83.7E-12 VJE=0.6868 MJE=0.3362 CJC=8.6E-12 VJC=0.3679 MJC=0.3607 
+TF=1E-9 TR=1800E-9
.ENDS
*
*$


*ZETEX FZT603 Spice Model v1.0 Last Revised 1/7/03
    *
    .SUBCKT FZT603 1 2 3
    *              C B E
    Q1 1 2 4 SUB603
    Q2 1 4 3 SUB603 3.46
    *
    .MODEL SUB603 NPN IS=1E-13 BF=130 VAF=200 NF=1 IKF=0.45 ISE=1.8E-13
    +NE=1.5 BR=20 VAR=30 NR=1 IKR=0.45 ISC=7E-13 NC=1.2 RB=0.3 RE=0.3
    +RC=0.5  CJE=115E-12 CJC=11E-12 VJC=0.85 MJC=0.41 TF=1E-9 TR=250E-9
    +XTB=1.5
    .ENDS
    *
    *$
    *


*ZETEX FZT605 Spice Model v1.0 Last Revised 27/04/05
    *
    .SUBCKT FZT605 1 2 3
    *              C B E
    Q1 1 2 4 SUB605
    Q2 1 4 3 SUB605 3.46
    *
    .MODEL SUB605 NPN IS=4.8E-14 BF=170 VAF=542 NF=1.0039 IKF=0.2 ISE=1.5E-14
    +NE=1.55 BR=12 VAR=20 NR=1.007 IKR=0.35 ISC=7.486E-14 NC=1.0984 RB=0.17 RE=0.3
    +RC=0.14 CJE=81E-12 CJC=10.8E-12 VJC=0.58 MJC=0.41 TF=1.024E-9 TR=700E-9
    .ENDS FZT605
    *
    *$
    *


*ZETEX FZT705 Spice Model v1.0 Last Revised 9/8/90
    *
    .SUBCKT FZT705 1 2 3
    *              C B E
    Q1 1 2 4 SUB704
    Q2 1 4 3 SUB704 4
    *
    .MODEL SUB704 PNP IS =3.35584E-14 BF =85 VAF=212 NF =1.002 IKF=.817
    +ISE=3.6E-13 NE =4.1 BR =24 VAR=6 NR =.999 IKR=.114 ISC=1.406E-13 NC =1.13
    +RB =1.1 RE =.4 RC =.0339 CJE=100E-12 CJC=37E-12 VJC=1.045 MJC=.595
    .ENDS FZT705
    *
    *$
    *


*ZETEX FZTA14 Spice Model v1.0 Last revision  25/11/2005
    *
    .SUBCKT FZTA14 1 2 3
    *               C B E
    Q1 1 2 4 SUB38C
    Q2 1 4 3 SUB38C 12.75
    *
    .MODEL SUB38C NPN IS=1.1E-14 ISE=7.1E-15 NF=1.012 NE=1.4758 
    +BF=220 IKF=.12 BR=15 IKR=.05 RE=1.3 RC=.5 RB=.3 VAF=150 
    +CJE=14.5E-12 CJC=4.14E-12 VJC=.515 MJC=.26 TF=1.15E-9 TR=75E-9
    .ENDS FZTA14
    *
    *$
    *


*SRC=MMBT6427;DI_MMBT6427;BJTs NPN;Darlington;40.0V 0.500A Diodes Inc. Darlington Transistor
*SYM=DARBJTN
.SUBCKT DII_MMBT6427 col base emtr
Q1 col base eb QPWR .1
Q2 col eb emtr QPWR
D1 emtr col  DSUB
D2 eb base  DSUB
.MODEL QPWR NPN  (IS=600f NF=1.00 BF=448  VAF=114
+ IKF=0.400 ISE=10.9p NE=2.00 BR=4.00 NR=1.00
+ VAR=48.0  IKR=0.600 RE=0.300 RB=1.20  RC=0.120
+ XTB=1.5 CJE=189p  VJE=0.740 MJE=0.450 CJC=13.9p
+  VJC=1.10 MJC=0.240 TF=1.30n  TR=659n )


*SRC=MMBTA13;DI_MMBTA13;BJTs NPN;Darlington;30.0V 0.300A Diodes Inc. NPN Darlington 
*SYM=DARBJTN 
.SUBCKT DI_MMBTA13 col base emtr 
Q1 col base eb QPWR .1 
Q2 col eb emtr QPWR 
D1 emtr col  DSUB 
D2 eb base  DSUB 
.MODEL QPWR NPN  (IS=360f NF=1.00 BF=134  VAF=98.6 
+ IKF=0.240 ISE=21.9p NE=2.00 BR=4.00 NR=1.00 
+ VAR=40.0  IKR=0.360 RE=4.00 RB=16.0  RC=1.60 
+ XTB=1.5 CJE=189p  VJE=0.740 MJE=0.450 CJC=13.9p 
+  VJC=1.10 MJC=0.240 TF=3.77n  TR=617n ) 
.MODEL DSUB D( IS=360f N=1 RS=4.00  BV=30.0 
+ IBV=.001  CJO=13.9p TT=617n ) 
.ENDS


*SRC=MMBTA14;DI_MMBTA14;BJTs NPN;Darlington;30.0V 0.300A Diodes Inc. Darlington Transistor
*SYM=DARBJTN
.SUBCKT DI_MMBTA14 col base emtr
Q1 col base eb QPWR .1
Q2 col eb emtr QPWR
D1 emtr col  DSUB
D2 eb base  DSUB
.MODEL QPWR NPN  (IS=360f NF=1.00 BF=141  VAF=98.6
+ IKF=0.240 ISE=20.8p NE=2.00 BR=4.00 NR=1.00
+ VAR=40.0  IKR=0.360 RE=0.333 RB=1.33  RC=0.133
+ XTB=1.5 CJE=189p  VJE=0.740 MJE=0.450 CJC=13.9p
+  VJC=1.10 MJC=0.240 TF=3.57n  TR=614n )=0.133
+ XTB=1.5 CJE=189p  VJE=0.740 MJE=0.450 CJC=13.9p
+  VJC=1.10 MJC=0.240 TF=3.57n  TR=614n )
.MODEL DSUB D( IS=360f N=1 RS=0.333  BV=30.0
+ IBV=.001  CJO=13.9p TT=614n )


*SRC=MMBTA28;DI_MMBTA28;BJTs NPN;Darlington;80.0V 0.500A Diodes Inc. NPN Darlington 
*SYM=DARBJTN 
.SUBCKT DI_MMBTA28 col base emtr 
Q1 col base eb QPWR .1 
Q2 col eb emtr QPWR 
D1 emtr col  DSUB 
D2 eb base  DSUB 
.MODEL QPWR NPN  (IS=600f NF=1.00 BF=134  VAF=161 
+ IKF=0.400 ISE=36.5p NE=2.00 BR=4.00 NR=1.00 
+ VAR=48.0  IKR=0.600 RE=0.500 RB=2.00  RC=0.200 
+ XTB=1.5 CJE=189p  VJE=0.740 MJE=0.450 CJC=13.9p 
+  VJC=1.10 MJC=0.240 TF=6.15n  TR=1.01u ) 
.MODEL DSUB D( IS=600f N=1 RS=0.500  BV=80.0 
+ IBV=.001  CJO=13.9p TT=1.01u ) 
.ENDS


*SRC=MMBTA63;DI_MMBTA63;BJTs PNP;Darlington;30.0V 0.500A Diodes Inc.  Darlington Transistor
*SYM=DARBJTP
.SUBCKT DII_MMBTA63 col base emtr
Q1 col base eb QPWR .1
Q2 col eb emtr QPWR
D1  col emtr DSUB
D2 base eb DSUB
.MODEL QPWR PNP  (IS=600f NF=1.00 BF=100  VAF=98.6
+ IKF=0.400 ISE=49.0p NE=2.00 BR=4.00 NR=1.00
+ VAR=40.0  IKR=0.600 RE=0.340 RB=1.36  RC=0.136
+ XTB=1.5 CJE=115p  VJE=0.740 MJE=0.450 CJC=16.5p
+  VJC=1.10 MJC=0.240 TF=5.05n  TR=641n )


*SRC=MMBTA64;DI_MMBTA64;BJTs PNP;Darlington;30.0V 0.500A Diodes Inc.  Darlington Transistor
*SYM=DARBJTP
.SUBCKT DII_MMBTA64 col base emtr
Q1 col base eb QPWR .1
Q2 col eb emtr QPWR
D1  col emtr DSUB
D2 base eb DSUB
.MODEL QPWR PNP  (IS=600f NF=1.00 BF=141  VAF=98.6
+ IKF=0.400 ISE=34.6p NE=2.00 BR=4.00 NR=1.00
+ VAR=40.0  IKR=0.600 RE=0.340 RB=1.36  RC=0.136
+ XTB=1.5 CJE=115p  VJE=0.740 MJE=0.450 CJC=16.5p
+  VJC=1.10 MJC=0.240 TF=3.57n  TR=614n )


*SRC=MMST6427;DI_MMST6427;BJTs NPN;Darlington;40.0V 0.500A Diodes Inc. Darlington Transistor
*SYM=DARBJTN
.SUBCKT DII_MMST6427 col base emtr
Q1 col base eb QPWR .1
Q2 col eb emtr QPWR
D1 emtr col  DSUB
D2 eb base  DSUB
.MODEL QPWR NPN  (IS=600f NF=1.00 BF=448  VAF=114
+ IKF=0.400 ISE=10.9p NE=2.00 BR=4.00 NR=1.00
+ VAR=48.0  IKR=0.600 RE=0.300 RB=1.20  RC=0.120
+ XTB=1.5 CJE=189p  VJE=0.740 MJE=0.450 CJC=13.9p
+  VJC=1.10 MJC=0.240 TF=1.30n  TR=659n )


*SRC=MMSTA13;DI_MMSTA13;BJTs NPN;Darlington;30.0V 0.300A Diodes Inc. Darlington Transistor
*SYM=DARBJTN
.SUBCKT DI_MMSTA13 col base emtr
Q1 col base eb QPWR .1
Q2 col eb emtr QPWR
D1 emtr col  DSUB
D2 eb base  DSUB
.MODEL QPWR NPN  (IS=360f NF=1.00 BF=100  VAF=98.6
+ IKF=0.240 ISE=29.4p NE=2.00 BR=4.00 NR=1.00
+ VAR=40.0  IKR=0.360 RE=0.333 RB=1.33  RC=0.133
+ XTB=1.5 CJE=189p  VJE=0.740 MJE=0.450 CJC=13.9p
+  VJC=1.10 MJC=0.240 TF=5.05n  TR=641n )


*SRC=MMSTA14;DI_MMSTA14;BJTs NPN;Darlington;30.0V 0.300A Diodes Inc. Darlington Transistor
*SYM=DARBJTN
.SUBCKT DI_MMSTA14 col base emtr
Q1 col base eb QPWR .1
Q2 col eb emtr QPWR
D1 emtr col  DSUB
D2 eb base  DSUB
.MODEL QPWR NPN  (IS=360f NF=1.00 BF=141  VAF=98.6
+ IKF=0.240 ISE=20.8p NE=2.00 BR=4.00 NR=1.00
+ VAR=40.0  IKR=0.360 RE=0.333 RB=1.33  RC=0.133
+ XTB=1.5 CJE=189p  VJE=0.740 MJE=0.450 CJC=13.9p
+  VJC=1.10 MJC=0.240 TF=3.57n  TR=614n )


*SRC=MMSTA63;DI_MMSTA63;BJTs PNP;Darlington;30.0V 0.500A Diodes Inc.  Darlington Transistor
*SYM=DARBJTP
.SUBCKT MMSTA63 col base emtr
Q1 col base eb QPWR .1
Q2 col eb emtr QPWR
.MODEL QPWR PNP  (IS=600f NF=1.00 BF=100  VAF=98.6
+ IKF=0.400 ISE=49.0p NE=2.00 BR=4.00 NR=1.00
+ VAR=40.0  IKR=0.600 RE=0.340 RB=1.36  RC=0.136
+ XTB=1.5 CJE=115p  VJE=0.740 MJE=0.450 CJC=16.5p
+  VJC=1.10 MJC=0.240 TF=5.05n  TR=641n )
.ENDS


*SRC=MMSTA64;DI_MMSTA64;BJTs PNP;Darlington;30.0V 0.500A Diodes Inc.  Darlington Transistor
*SYM=DARBJTP
.SUBCKT DII_MMSTA64 col base emtr
Q1 col base eb QPWR .1
Q2 col eb emtr QPWR
D1  col emtr DSUB
D2 base eb DSUB
.MODEL QPWR PNP  (IS=600f NF=1.00 BF=141  VAF=98.6
+ IKF=0.400 ISE=34.6p NE=2.00 BR=4.00 NR=1.00
+ VAR=40.0  IKR=0.600 RE=0.340 RB=1.36  RC=0.136
+ XTB=1.5 CJE=115p  VJE=0.740 MJE=0.450 CJC=16.5p
+  VJC=1.10 MJC=0.240 TF=3.57n  TR=614n )


*ZETEX ZTX603 Spice Model v1.0 Last Revised 1/7/03
    *
    .SUBCKT ZTX603 1 2 3
    *              C B E
    Q1 1 2 4 SUB603
    Q2 1 4 3 SUB603 3.46
    *
    .MODEL SUB603 NPN IS=1E-13 BF=130 VAF=200 NF=1 IKF=0.45 ISE=1.8E-13
    +NE=1.5 BR=20 VAR=30 NR=1 IKR=0.45 ISC=7E-13 NC=1.2 RB=0.3 RE=0.3
    +RC=0.5  CJE=115E-12 CJC=11E-12 VJC=0.85 MJC=0.41 TF=1E-9 TR=250E-9
    +XTB=1.5
    .ENDS
    *
    *$
    *


*ZETEX ZTX605 Spice Model v1.0 Last Revised 24/6/93
    *
    .SUBCKT ZTX605 1 2 3
    *              C B E
    Q1 1 2 4 SUB605
    Q2 1 4 3 SUB605 3.46
    *
    .MODEL SUB605 NPN IS=4.8E-14 BF=170 VAF=542 NF=1.0039 IKF=0.2 ISE=1.5E-14
    +NE=1.55 BR=12 VAR=20 NR=1.007 IKR=0.35 ISC=7.486E-14 NC=1.0984 RB=0.17 RE=0.3
    +RC=0.14 CJE=81E-12 CJC=10.8E-12 VJC=0.58 MJC=0.41 TF=1.024E-9 TR=700E-9
    .ENDS ZTX605
    *
    *$
    *


*ZETEX ZTX614 Spice Model v1.0 Last Revised 17/12/92
    *
    .SUBCKT ZTX614 1 2 3
    *              C B E
    Q1 1 2 4 SUB614
    Q2 1 4 3 SUB614 5.39
    .ENDS ZTX614
    *
    .MODEL SUB614 NPN IS =1.575E-14 NF =1.00 BF =280 IKF=0.08 VAF=284 
    +             ISE=5.8853E-15 NE =1.3517 NR =1.0469 BR =11 IKR=0.2 
    +             VAR=13 ISC=5.3795E-14 NC =1.257 RB =0.22 RE =0.375 
    +             RC =0.40 CJC=3.6E-12 MJC=0.3393 VJC=0.4127 
    +             CJE=23.7E-12 TF =1.73E-9 TR =260E-9
    *
    *$
    *


*ZETEX ZTX705 Spice Model v1.0 Last Revised 9/8/90
    *
    .SUBCKT ZTX705 1 2 3
    *              C B E
    Q1 1 2 4 SUB704
    Q2 1 4 3 SUB704 4
    *
    .MODEL SUB704 PNP IS =3.35584E-14 BF =85 VAF=212 NF =1.002 IKF=.817
    +ISE=3.6E-13 NE =4.1 BR =24 VAR=6 NR =.999 IKR=.114 ISC=1.406E-13 NC =1.13
    +RB =1.1 RE =.4 RC =.0339 CJE=100E-12 CJC=37E-12 VJC=1.045 MJC=.595
    .ENDS ZTX705
    *
    *$
    *


*ZETEX ZXTN04120HFF Spice Model v1.0 Last Revised 09/02/07
    *
    .SUBCKT ZXTN04120HFF 1 2 3
    *              C B E
    Q1 1 2 4 SUB605
    Q2 1 4 3 SUB605 3.46
    *
    .MODEL SUB605 NPN IS=4.8E-14 BF=170 VAF=542 NF=1.0039 IKF=0.2 ISE=1.5E-14
    +NE=1.55 BR=12 VAR=20 NR=1.007 IKR=0.35 ISC=7.486E-14 NC=1.0984 RB=0.17 RE=0.3
    +RC=0.14 CJE=81E-12 CJC=10.8E-12 VJC=0.58 MJC=0.41 TF=1.024E-9 TR=700E-9
    .ENDS ZXTN04120HFF
    *
    *$
    *


*ZETEX ZXTP05120HFF Spice Model v1.0 Last Revised 08/02/07
    *
    .SUBCKT ZXTP05120HFF 1 2 3
    *              C B E
    Q1 1 2 4 SUB704
    Q2 1 4 3 SUB704 4
    *
    .MODEL SUB704 PNP IS =3.35584E-14 BF =85 VAF=212 NF =1.002 IKF=.817
    +ISE=3.6E-13 NE =4.1 BR =24 VAR=6 NR =.999 IKR=.114 ISC=1.406E-13 NC =1.13
    +RB =1.1 RE =.4 RC =.0339 CJE=100E-12 CJC=37E-12 VJC=1.045 MJC=.595
    .ENDS ZXTP05120HFF
    *
    *$
    *


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=21JAN2011
*VERSION=1
*PINS          C B E
*
.SUBCKT FZT7053 1 2 3
Q1 1 2 4 SUB614
Q2 1 4 3 SUB614 5.39
*
.MODEL SUB614 NPN IS =1.575E-14 NF =1.00 BF =280 IKF=0.08 VAF=284 
+ ISE=5.8853E-15 NE =1.3517 NR =1.0469 BR =11 IKR=0.2 
+ VAR=13 ISC=5.3795E-14 NC =1.257 RB =0.22 RE =0.375 
+ RC =0.40 CJC=3.6E-12 MJC=0.3393 VJC=0.4127 
+ CJE=23.7E-12 TF =1.73E-9 TR =260E-9
.ENDS
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_IM
*SIMULATOR=PSPICE
*DATE=17Dec2013
*VERSION=1
*

.SUBCKT ZXTN04120HK 1 2 3
*                   C B E
Q1 1 2 4 SUB04120
Q2 1 4 3 SUB04120 3.46

.MODEL SUB04120 NPN IS=4.8E-14 BF=170 VAF=542 NF=1.0039 IKF=0.2 ISE=1.5E-14
+NE=1.55 BR=12 VAR=20 NR=1.007 IKR=0.35 ISC=7.486E-14 NC=1.0984 RB=0.17 RE=0.3
+RC=0.14 CJE=81E-12 CJC=10.8E-12 VJC=0.58 MJC=0.41 TF=1.024E-9 TR=700E-9
.ENDS ZXTN04120HK

*
*                (c)  2013 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=27JAN2011
*VERSION=1
*PIN_ORDER         
*1=B1
*2=E1
*3=N/C
*4=A
*5=K
*6=K
*7=C1
*8=C1
*
.SUBCKT ZXTNS618MC 1 2 3 4 5 6 7 8
Q1 11 1 2 Nmod
D1 4 12 S9086
RP1 11 7 0.001
RP2 11 8 0.001
RP3 12 5 0.001
RP4 12 6 0.001
RP5 3 4 1E15
*
.MODEL Nmod NPN IS=5.611E-13 NF=1.0022 BF=480 IKF=4.6 VAF=51
+ ISE=1.73E-13 NE=1.4 NR=1.0002 BR=200 IKR=3 VAR=25 
+ ISC=7.3152E-13 NC=1.47 RB=0.032 RE=0.027 RC=0.025 
+ CJC=59E-12 MJC=0.2651 VJC=0.3051 CJE=216E-12 
+ TF=0.95E-9 TR=2.25E-9
.MODEL S9086 D IS=1E-6 EG=0.62 RS=0.13 BV=40 IBV=100u CJO=175p
+ M=0.333 N=0.823 TT=7.20n XTI=2 TRS1=4e-3 ISR=12e-6 NR=1.25
.ENDS
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=27JAN2011
*VERSION=1
*PIN_ORDER         
*1=B1
*2=E1
*3=N/C
*4=A
*5=K
*6=K
*7=C1
*8=C1
*
.SUBCKT ZXTPS717MC 1 2 3 4 5 6 7 8
Q1 11 1 2 Pmod
D1 4 12 S9086
RP1 11 7 0.001
RP2 11 8 0.001
RP3 12 5 0.001
RP4 12 6 0.001
RP5 3 4 1E15
*
.MODEL Pmod PNP IS=5.5E-13  BF=500 IKF=3 VAF=14.93 
+ ISE=1.75E-13 NE=1.5 NR=1.00 BR=280 IKR=0.3  VAR=5.64
+ ISC=6.01E-13 NC=1.34 RB=0.3 RE=0.03 RC=0.025 CJC=116.9E-12
+ MJC=0.3456 VJC=0.4576 CJE=223.6E-12 MJE=0.4803 VJE=0.9091
+ TF=1.2E-9  TR=2E-9
.MODEL S9086 D IS=1E-6 EG=0.62 RS=0.13 BV=40 IBV=100u CJO=175p
+ M=0.333 N=0.823 TT=7.20n XTI=2 TRS1=4e-3 ISR=12e-6 NR=1.25
.ENDS
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=27JAN2011
*VERSION=1
*PIN_ORDER         
*1=B1
*2=E1
*3=N/C
*4=A
*5=K
*6=K
*7=C1
*8=C1
*
.SUBCKT ZXTPS718MC 1 2 3 4 5 6 7 8
Q1 11 1 2 Pmod
D1 4 12 S9086
RP1 11 7 0.001
RP2 11 8 0.001
RP3 12 5 0.001
RP4 12 6 0.001
RP5 3 4 1E15
*
.MODEL Pmod PNP IS=6.8E-13  BF=480 IKF=2 VAF=23 
+ ISE=0.8E-13 NE=1.5567 NR=1.00 BR=70 IKR=0.4 
+ VAR=7 ISC=7.5E-14 NC=1.19 RB=0.085 RE=0.04
+ RC=0.045 CJC=70.02E-12 MJC=0.4685 VJC=0.7714 
+ CJE=203.6E-12 MJE=0.5029 VJE=0.9403 TF=0.71E-9 
+ TR=23.7E-9
.MODEL S9086 D IS=1E-6 EG=0.62 RS=0.13 BV=40 IBV=100u CJO=175p
+ M=0.333 N=0.823 TT=7.20n XTI=2 TRS1=4e-3 ISR=12e-6 NR=1.25
.ENDS
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=27JAN2011
*VERSION=1
*PIN_ORDER         
*1=B1
*2=E1
*3=N/C
*4=A
*5=K
*6=K
*7=C1
*8=C1
*
.SUBCKT ZXTPS720MC 1 2 3 4 5 6 7 8
Q1 11 1 2 Pmod
D1 4 12 S9086
RP1 11 7 0.001
RP2 11 8 0.001
RP3 12 5 0.001
RP4 12 6 0.001
RP5 3 4 1E15
*
.MODEL Pmod PNP IS=6.261E-13  BF=500 IKF=1.4 VAF=28.4 
+ ISE=1.057E-13 NE=1.4923 NR=1.00 BR=42 IKR=0.65 VAR=10.21 
+ ISC=6E-14 NC=1.124 RB=0.078 RE=0.077 RC=0.04 CJC=59.54E-12 
+ MJC=0.5058 VJC=0.8427 CJE=201.4E-12 MJE=0.5244 VJE=1.021 
+ TF=0.68E-9 TR=23.7E-9 NK=0.75 XTB=1.8 TRE1=.0025 TRB1=.0025 
+ TRC1=.0025
.MODEL S9086 D IS=1E-6 EG=0.62 RS=0.13 BV=40 IBV=100u CJO=175p
+ M=0.333 N=0.823 TT=7.20n XTI=2 TRS1=4e-3 ISR=12e-6 NR=1.25
.ENDS
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=03/08/2010
*VERSION=2
*------connections-------P1=D, P2=G, P3=N/C, P4=C, P5=E, P6=R1, P7=B, P8=S
*
.SUBCKT DLD101 P1 P2 P4 P5 P6 P7 P8
*
*MOSFET model
M1 6 2 5 5 Nmod L=1E-6 W=0.2
M2 5 2 5 6 Pmod L=1.5E-6 W=0.15
RG P2 2 7
RIN 2 5 1E9
RD P1 6 Rdmod 0.58
RB P1 7 Rdmod 0.015
RL 6 5 10E9
C1 2 5 10E-12
C2 P1 P2 3E-12
D1 5 7  Dbodymod
LS 5 P8 2.0E-9
*
*Bipolar model
Q1 P4 P7 P5 NPNmod
R1 P6 P7 4.7E3
R2 P5 P7 47E3
*
.MODEL Nmod NMOS (LEVEL=3 TOX=5E-8  NSUB=2E17 VTO=3.7 KP=8.6E-6 RS=.046 NFS=2E12
+ KAPPA=0.06 UO=650 IS=6E-15 N=10)
.MODEL Pmod PMOS (LEVEL=3 TOX=15E-8 NSUB=6E15 TPG=-1 IS=1E-15 N=10)
.MODEL Dbodymod D (IS=1E-12 N=1.05 RS=0.045 TRS1=1.5e-3 CJO=39e-12 BV=101)
.MODEL Rdmod RES (TC1=7e-3 TC2=1.7E-5)
.MODEL NPNmod  NPN (IS=6E-14 NF=1.02 BF=320 IKF=0.3 VAF=80 ISE=5E-14 NE=1.4 NR=1 BR=10
+ IKR=0.06 VAR=10 ISC=2E-13 NC=1.3 RC=0.194 RB=0.5 RE=0.245 CJC=6.05E-12 MJC=0.175 VJC=0.4
+ CJE=13E-12 MJE=0.36 VJE=0.7 TF=0.4E-9 TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=25 GAMMA=5E-8)
.ENDS DLD101
*
*$


*
*DIODES_INC_SPICE_MODEL_AL5801
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=11/06/2012
*VERSION=2

.SUBCKT AL5801 BIAS FB OUT REXT COMP GND


M1 1 2 3 3  Nmod1
RD OUT 1 Rmod1 450E-3
RS 23 3 Rmod1 27E-3
RG BIAS 22 1.5
RIN BIAS 23 2E11
RDS OUT 23 6E9
CGS 2 3 380E-12 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 426E-12 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 23 10  DSUB
EL 2 22 1 3 0.0015
LS  REXT 23 2n
.MODEL Nmod1 NMOS (LEVEL=3 VTO=3.4 TOX=6E-8 NSUB=2.8E+17 KP=1 NFS=8E+11 IS=1E-15 N=10)
.MODEL DCGD D (CJO = 244E-12  VJ = 0.5  M = 0.43 T_ABS=25)
.MODEL DSUB D (IS = .1E-10 N=1.1 RS=0.02 BV=102 CJO=330E-12 VJ=0.42 M=0.5 TT=145E-9 TRS1=2E-3)
.MODEL DLIM D (IS=100U N=1 T_ABS=25)
.MODEL Rmod1 RES (TC1=2e-3 TC2=6E-6)

Q1 BIAS FB GND SWT
Rbg FB GND 47000
Rbnc FB COMP 4700

.MODEL SWT NPN(IS=20E-14 NF=.99 BF=320 IKF=0.3 VAF=80 ISE=5E-14 NE=1.4 NR=1 BR=10
+ IKR=0.06 VAR=10 ISC=2E-13 NC=1.3 RC=0.194 RB=0.5 RE=0.245 CJC=6.05E-12 MJC=0.175 VJC=0.4
+ CJE=13E-12 MJE=0.36 VJE=0.7 TF=0.4E-9 TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=25 GAMMA=5E-8)

.ENDS
.SIMULATOR DEFAULT



*                (c)  2012 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*SRC=DRDN005W;DI_DRDN005W_NPN;BJTs NPN; Si;  80.0V  0.500A  219MHz   Diodes Inc. Transistor 
.MODEL DI_DRDN005W_NPN  NPN (IS=50.8f NF=1.00 BF=479 VAF=161 
+ IKF=91.1m ISE=9.99p NE=2.00 BR=4.00 NR=1.00 
+ VAR=16.0 IKR=0.225 RE=0.103 RB=0.412 RC=41.2m 
+ XTB=1.5 CJE=58.7p VJE=1.10 MJE=0.500 CJC=18.9p VJC=0.300 
+ MJC=0.300 TF=576p TR=110n EG=1.12 )

*SRC=DRDN005W;DI_DRDN005W_DIODE;Diodes;Si;  75.0V  0.250A  4.00ns   Diodes Inc. Switching Diode
.MODEL DI_DRDN005W_DIODE D  ( IS=300n RS=0.422 BV=75.0 IBV=2.50u
+ CJO=1.99p  M=0.333 N=2.77 TT=5.76n )


*SRC=DRDN010W;DI_DRDN010W_NPN;BJTs NPN; Si;  18.0V  1.00A  100MHz   Diodes Inc. BJTs
.MODEL DI_DRDN010W_NPN  NPN (IS=102f NF=1.00 BF=1.09k VAF=76.4
+ IKF=0.425 ISE=13.4p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=1.05 RE=0.181 RB=0.726 RC=72.6m
+ XTB=1.5 CJE=71.7p VJE=1.10 MJE=0.500 CJC=23.1p VJC=0.300 MJC=0.300 
+ TF=1.55n TR=238n EG=1.12 )

*SRC=DRDN010W;DI_DRDN010W_DIODE;Diodes;Si;  75.0V  0.250A  4.00ns   Diodes Inc. Switching Diode
.MODEL DI_DRDN010W_DIODE D  ( IS=300n RS=0.422 BV=75.0 IBV=2.50u
+ CJO=1.99p  M=0.333 N=2.77 TT=5.76n )


*SRC=DRDNB16W;DI_DRDNB16W_NPN;BJTs NPN; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DRDNB16W_NPN  NPN (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )

*SRC=DRDNB16W;DI_DRDNB16W_DIODE;Diodes;Si;  75.0V  0.250A  4.00ns   Diodes Inc. Switching Diode
.MODEL DI_DRDNB16W_DIODE D  ( IS=300n RS=0.422 BV=75.0 IBV=2.50u
+ CJO=1.99p  M=0.333 N=2.77 TT=5.76n )


Note:  The following SPICE model is for the individual elements of this device.
When applying this SPICE model to your circuit simulation be certain to 
add R1 and R2 values per the table found on the data sheet for the pre-biased
transistor elements. 
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.

*SRC=DRDNB21D;DI_DRDNB21D_NPN;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs
.MODEL DI_DRDNB21D_NPN  NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )

*SRC=DRDNB21D;DI_DRDNB21D_DIODE;Diodes;Si;  75.0V  0.250A  4.00ns   Diodes Inc. Switching Diode
.MODEL DI_DRDNB21D_DIODE D  ( IS=300n RS=0.422 BV=75.0 IBV=2.50u
+ CJO=1.99p  M=0.333 N=2.77 TT=5.76n )


*SRC=DRDNB26W;DI_DRDNB26W_NPN;BJTs NPN; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DRDNB26W_NPN  NPN (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )

*SRC=DRDNB26W;DI_DRDNB26W_DIODE;Diodes;Si;  75.0V  0.250A  4.00ns   Diodes Inc. Switching Diode
.MODEL DI_DRDNB26W_DIODE D  ( IS=300n RS=0.422 BV=75.0 IBV=2.50u
+ CJO=1.99p  M=0.333 N=2.77 TT=5.76n )


*SRC=DRDP006W;DI_DRDP006W_PNP;BJTs PNP; Si;  60.0V  0.600A  200MHz   Diodes Inc. Transistor 
.MODEL DI_DRDP006W_PNP  PNP (IS=60.7f NF=1.00 BF=312 VAF=139 
+ IKF=0.219 ISE=26.0p NE=2.00 BR=4.00 NR=1.00 
+ VAR=20.0 IKR=0.540 RE=85.8m RB=0.343 RC=34.3m 
+ XTB=1.5 CJE=50.4p VJE=1.10 MJE=0.500 CJC=23.1p VJC=0.300 
+ MJC=0.300 TF=758p TR=123n EG=1.12 )

*SRC=DRDP006W;DI_DRDP006W_DIODE;Diodes;Si;  75.0V  0.250A  4.00ns   Diodes Inc. Switching Diode
.MODEL DI_DRDP006W_DIODE D  ( IS=300n RS=0.422 BV=75.0 IBV=2.50u
+ CJO=1.99p  M=0.333 N=2.77 TT=5.76n )


*SRC=DRDPB16W;DI_DRDPB16W_PNP;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DRDPB16W_PNP  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )

*SRC=DRDPB16W;DI_DRDPB16W_DIODE;Diodes;Si;  75.0V  0.250A  4.00ns   Diodes Inc. Switching Diode
.MODEL DI_DRDPB16W_DIODE D  ( IS=300n RS=0.422 BV=75.0 IBV=2.50u
+ CJO=1.99p  M=0.333 N=2.77 TT=5.76n )


*SRC=DRDPB26W;DI_DRDPB26W_PNP;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs
.MODEL DI_DRDPB26W_PNP  PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )

*SRC=DRDPB26W;DI_DRDPB26W_DIODE;Diodes;Si;  75.0V  0.250A  4.00ns   Diodes Inc. Switching Diode
.MODEL DI_DRDPB26W_DIODE D  ( IS=300n RS=0.422 BV=75.0 IBV=2.50u
+ CJO=1.99p  M=0.333 N=2.77 TT=5.76n )


*******************************************************************************************************************************
*SRC=CTA2N1P;DI_CTA2N1P_BJT;BJTs NPN; Si;  40.0V  0.600A  275MHz   Diodes Inc. BJTs
.MODEL DI_CTA2N1P_BJT  NPN (IS=1.27p NF=1.00 BF=410 VAF=114
+ IKF=60.7m ISE=47.7p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.150 RE=0.261 RB=1.04 RC=0.104
+ XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=14.2p VJC=0.300
+ MJC=0.300 TF=533p TR=84.1n EG=1.12 )

*SRC=CTA2N1P;DI_CTA2N1P_MOSFET;MOSFETs P;Enh;50.0V 0.130A 6.00ohms  Diodes Inc. MOSFET
.MODEL DI_CTA2N1P_MOSFET  PMOS( LEVEL=1 VTO=-1.60 KP=25.0m  GAMMA=1.98
+ PHI=.75  LAMBDA=108u RD=0.840 RS=0.840
+ IS=65.0f  PB=0.800 MJ=0.460 CBD=64.2p 
+ CBS=77.1p  CGSO=144n CGDO=120n CGBO=341n  )
*   -- Assumes default L=100U W=100U --
*******************************************************************************************************************************


----------------------------------------------------------------------------------------------------------------------------------------------------------------
*SRC=CTA2P1N;DI_CTA2P1N_BJT;BJTs PNP; Si;  40.0V  0.600A  200MHz   Diodes Inc. BJTs
.MODEL DI_CTA2P1N_BJT  PNP (IS=60.4f NF=1.00 BF=410 VAF=114
+ IKF=0.304 ISE=23.2p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.750 RE=0.261 RB=1.04 RC=0.104
+ XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300
+ MJC=0.300 TF=667p TR=84.1n EG=1.12 )

*SRC=CTA2P1N;DI_CTA2P1N_MOSFET;MOSFETs N;Enh;60.0V 0.115A 2.00ohms  Didoes Inc. MOSFET 
.MODEL DI_CTA2P1N_MOSFET  NMOS( LEVEL=1 VTO=1.50 KP=32.0m  GAMMA=1.86
+ PHI=.75  LAMBDA=40.0u RD=0.280 RS=0.280
+ IS=57.5f  PB=0.800 MJ=0.460 CBD=44.5p 
+ CBS=53.4p  CGSO=24.0n CGDO=20.0n CGBO=176n  )
*   -- Assumes default L=100U W=100U --
-----------------------------------------------------------------------------------------------------------------------------------------------------------------


*******************************************************************************************************************************
*SRC=LMN200B01;DI_LMN200B01_BJT;BJTs NPN; Si;  40.0V  0.600A  275MHz   Diodes Inc. BJTs
.MODEL DI_LMN200B01P_BJT  NPN (IS=1.27p NF=1.00 BF=410 VAF=114
+ IKF=60.7m ISE=47.7p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.150 RE=0.261 RB=1.04 RC=0.104
+ XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=14.2p VJC=0.300
+ MJC=0.300 TF=533p TR=84.1n EG=1.12 )

*SRC=CTA2N1P;DI_CTA2N1P_MOSFET;MOSFETs P;Enh;50.0V 0.130A 6.00ohms  Diodes Inc. MOSFET
.MODEL DI_CTA2N1P_MOSFET  PMOS( LEVEL=1 VTO=-1.60 KP=25.0m  GAMMA=1.98
+ PHI=.75  LAMBDA=108u RD=0.840 RS=0.840
+ IS=65.0f  PB=0.800 MJ=0.460 CBD=64.2p 
+ CBS=77.1p  CGSO=144n CGDO=120n CGBO=341n  )
*   -- Assumes default L=100U W=100U --
*******************************************************************************************************************************

----------------------------------------------------------------------------------------------------------------------------------------------------------------
*SRC=CTA2P1N;DI_CTA2P1N_BJT;BJTs PNP; Si;  40.0V  0.600A  200MHz   Diodes Inc. BJTs
.MODEL DI_CTA2P1N_BJT  PNP (IS=60.4f NF=1.00 BF=410 VAF=114
+ IKF=0.304 ISE=23.2p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.750 RE=0.261 RB=1.04 RC=0.104
+ XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300
+ MJC=0.300 TF=667p TR=84.1n EG=1.12 )

*SRC=CTA2P1N;DI_CTA2P1N_MOSFET;MOSFETs N;Enh;60.0V 0.115A 2.00ohms  Didoes Inc. MOSFET 
.MODEL DI_CTA2P1N_MOSFET  NMOS( LEVEL=1 VTO=1.50 KP=32.0m  GAMMA=1.86
+ PHI=.75  LAMBDA=40.0u RD=0.280 RS=0.280
+ IS=57.5f  PB=0.800 MJ=0.460 CBD=44.5p 
+ CBS=53.4p  CGSO=24.0n CGDO=20.0n CGBO=176n  )
*   -- Assumes default L=100U W=100U --
----------------------------------------------------------


*******************************************************************************************************************************
*SRC=LMN200B02;DI_LMN200B02_BJT;BJTs NPN; Si;  40.0V  0.600A  275MHz   Diodes Inc. BJTs
.MODEL DI_LMN200B02_BJT  NPN (IS=1.27p NF=1.00 BF=410 VAF=114
+ IKF=60.7m ISE=47.7p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.150 RE=0.261 RB=1.04 RC=0.104
+ XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=14.2p VJC=0.300
+ MJC=0.300 TF=533p TR=84.1n EG=1.12 )

*SRC=CTA2N1P;DI_CTA2N1P_MOSFET;MOSFETs P;Enh;50.0V 0.130A 6.00ohms  Diodes Inc. MOSFET
.MODEL DI_CTA2N1P_MOSFET  PMOS( LEVEL=1 VTO=-1.60 KP=25.0m  GAMMA=1.98
+ PHI=.75  LAMBDA=108u RD=0.840 RS=0.840
+ IS=65.0f  PB=0.800 MJ=0.460 CBD=64.2p 
+ CBS=77.1p  CGSO=144n CGDO=120n CGBO=341n  )
*   -- Assumes default L=100U W=100U --
*******************************************************************************************************************************

----------------------------------------------------------------------------------------------------------------------------------------------------------------
*SRC=CTA2P1N;DI_CTA2P1N_BJT;BJTs PNP; Si;  40.0V  0.600A  200MHz   Diodes Inc. BJTs
.MODEL DI_CTA2P1N_BJT  PNP (IS=60.4f NF=1.00 BF=410 VAF=114
+ IKF=0.304 ISE=23.2p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.750 RE=0.261 RB=1.04 RC=0.104
+ XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300
+ MJC=0.300 TF=667p TR=84.1n EG=1.12 )

*SRC=CTA2P1N;DI_CTA2P1N_MOSFET;MOSFETs N;Enh;60.0V 0.115A 2.00ohms  Didoes Inc. MOSFET 
.MODEL DI_CTA2P1N_MOSFET  NMOS( LEVEL=1 VTO=1.50 KP=32.0m  GAMMA=1.86
+ PHI=.75  LAMBDA=40.0u RD=0.280 RS=0.280
+ IS=57.5f  PB=0.800 MJ=0.460 CBD=44.5p 
+ CBS=53.4p  CGSO=24.0n CGDO=20.0n CGBO=176n  )
*   -- Assumes default L=100U W=100U --
----------------------------------------------------------


*SRC=DVR5V0W;DI_DVR5V0W_NPN;BJTs NPN; Si;  18.0V  1.00A  100MHz   Diodes Inc. BJTs
.MODEL DI_DVR5V0W_NPN  NPN (IS=102f NF=1.00 BF=1.09k VAF=76.4
+ IKF=0.425 ISE=13.4p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=1.05 RE=0.181 RB=0.726 RC=72.6m
+ XTB=1.5 CJE=71.7p VJE=1.10 MJE=0.500 CJC=23.1p VJC=0.300 MJC=0.300 
+ TF=1.55n TR=238n EG=1.12 )

*SRC=DVR5V0W;DI_DVR5V0W_Zener;Diodes;Zener <=10V; 5.10V  0.500W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_DVR5V0W_Zener  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.62
.MODEL DF D ( IS=40.4p RS=34.9 N=1.10
+ CJO=119p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.08f RS=13.1 N=3.00 )


*SRC=MMBT4401;DI_MMBT4401;BJTs NPN; Si;  40.0V  0.600A  200MHz   Diodes, Inc. transistor
.MODEL DI_MMBT4401  NPN (IS=60.9f NF=1.00 BF=410 VAF=114
+ IKF=0.364 ISE=25.5p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.900 RE=0.713 RB=2.85 RC=0.285
+ XTB=1.5 CJE=36.2p VJE=1.10 MJE=0.500 CJC=15.4p VJC=0.300
+ MJC=0.300 TF=717p TR=121n EG=1.12 )

*SRC=UDZ5V6B;DI_UDZ5V6;Diodes;Zener <=10V; 5.60V  0.200W   Diodes Inc. Zener Diode
*SYM=HZEN
.SUBCKT DI_UDZ5V6  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 4.99
.MODEL DF D ( IS=14.7p RS=3.10 N=1.10
+ CJO=32.9p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.94f RS=1.28 N=0.828 )
.ENDS


* SPICE 3 Model for  DESD5V0U1BA 1 Channel SOD323
*****************************************************************************
* (C) Copyright 2016 Diodes Incorporated. All rights reserved.                                            
*****************************************************************************
** This model is designed as an aid not an accurate physical model
** DIODES  make no warranties with this model
**  The model is provided solely on an "as is" basis.  
** The entire risk as to its quality and performance is with the customer.
*****************************************************************************
*
* This model is subject to change without notice. 
* Diodes is not responsible that this model is actual or to give notice about changes
*****************************************************************************
*
* Updates:
*
* Version 1.0  
*
*****************************************************************************
*â€Provides ESD Protection per IEC 61000-4-2 Standard: Contact ±10kV
*â€1 Channel of ESD Protection
*â€Low Channel Input Capacitance
*â€Typically Used in Cellular Handsets, Portable Electronics,
*Communication Systems, Computers and Peripherals
*****************************************************************************
.SUBCKT DESD5V0U1BA 1 2


* Pin 1 = Electrode 1
* Pin 2 = Electrode 2 

*  Terminals    A   K

D1	  1    3     ZDiode
D2	  2    3     ZDiode

.ENDS DESD5V0U1BA
*
.MODEL ZDiode d
+IS=1e-13 RS=0.151 N=0.957115 EG=1.3
+XTI=4 BV=6.47 IBV=0.00025 CJO=5.52e-12
+VJ=0.980233 M=0.39895 FC=0.5 TT=1e-09
+KF=0 AF=1


* SPICE 3 Model for  D5V0L1B2WS 1 Channel SOD323
*****************************************************************************
* (C) Copyright 2016 Diodes Incorporated. All rights reserved.                                            
*****************************************************************************
** This model is designed as an aid not an accurate physical model
** DIODES  make no warranties with this model
**  The model is provided solely on an "as is" basis.  
** The entire risk as to its quality and performance is with the customer.
*****************************************************************************
*
* This model is subject to change without notice. 
* Diodes is not responsible that this model is actual or to give notice about changes
*****************************************************************************
*
* Updates:
*
* Version 1.0  
*
*****************************************************************************
*â€Provides ESD Protection per IEC 61000-4-2 Standard: Air â€Â±30kV, Contact â€Â±30kV
*â€1 Channel of ESD Protection
*â€Low Channel Input Capacitance
*â€Typically Used in Cellular Handsets, Portable Electronics,
*Communication Systems, Computers and Peripherals
*****************************************************************************
.SUBCKT D5V0L1B2WS 1 2


* Pin 1 = Electrode 1
* Pin 2 = Electrode 2 

*  Terminals    A   K

D1	  1    3     ZDiode
D2	  2    3     ZDiode

.ENDS D5V0L1B2WS
*
.MODEL ZDiode d
+IS=1e-13 RS=0.25 N=0.957115 EG=1.3
+XTI=4 BV=6.48 IBV=0.00025 CJO=32e-12
+VJ=0.980233 M=0.39895 FC=0.5 TT=1e-09
+KF=0 AF=1


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=09/10/2009
*VERSION=1
*PIN_ORDER         C A
*
.SUBCKT 30SMCJ22A 1 2
D1 2 11  Dmod1
L1 1 11 5E-9
.MODEL Dmod1 D (IS=1E-12 N=1.1 RS=0.01 TRS1=5E-4 CJO=5950E-12 VJ=0.51
+ M=0.34 BV=25.3 IBV=100E-6 TBV1=8E-4)
.ENDS 30SMCJ22A
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=1/04/2014
*VERSION=1

.model 30SMCJ28A D(IS=.1u RS=0.1 CJO=1800p M=0.5 VJ=0.4 ISR=.008u N=1.05 IKF=1m BV=30 NBV=20 IBV=10u TT=40n EG=.84 TRS1=.1m) 


*         (c)  2014 Diodes Inc
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*

.SIMULATOR DEFAULT



*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=1/30/2015
*VERSION=1


.model 3_0SMCJ30A D(IS=.1u RS=0.15 CJO=17000p M=1 VJ=0.4 ISR=.008u N=1.05 IKF=1m BV=32 NBV=10 IBV=10u TT=4n EG=.84 TRS1=.1m)


*         (c)  2015 Diodes Inc
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*

.SIMULATOR DEFAULT


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=24/02/2013
*VERSION=1


.model DFLT15A D(IS=4f RS=0.194 CJO=4000p M=0.6 VJ=0.5 ISR=.008u N=1.05 IKF=1m BV=16.9 IBV=100u TT=40n EG=.84 TRS1=.1m)              
       

*                     (c)  2014 Diodes Inc
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*

.SIMULATOR DEFAULT



*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=8/01/2014
*VERSION=1


.model SMAJ48A D(IS=.1u RS=0.078 CJO=1000p M=0.5 VJ=0.4 ISR=.008u N=1.05 IKF=1m BV=53 NBV=20 IBV=10u TT=40n EG=.84 TRS1=.1m)       



*         (c)  2014 Diodes Inc
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*

.SIMULATOR DEFAULT



*DIODES_INC_SPICE_MODEL
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=23AUG2013
*VERSION=1

.SUBCKT SMBJ18A  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 20
.MODEL DF D ( IS=10f RS=.5 N=1.10
+ CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5f RS=.2 N=1.1 )
.ENDS


.SIMULATOR DEFAULT

*                (c)  2013 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=30/01/2015
*VERSION=1


.model SMBJ33A D(IS=.1u RS=0.3 CJO=80000p M=1.3 VJ=0.4 ISR=.008u N=1.05 IKF=1m BV=34.3 NBV=20 IBV=10u TT=4n EG=.84 TRS1=.1m) 




*         (c)  2015 Diodes Inc
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*

.SIMULATOR DEFAULT


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=10NOV2010
*VERSION=1
*
.SUBCKT SMCJ24A 7 1
*------connections-------Anode Cathode
*
L1 7 2 1.5E-9
*Forward
D1 2 1 Dmod1
.MODEL Dmod1 D IS=1.5E-12 N=1.18 XTI=5 RS=0.04 CJO=620E-12 VJ=0.75 M=0.42 TT=4E-7
C1 1 2 50E-12
*Leakage
RL 1 2 8E6
*Reverse
RZ1 2 3 2
D2 4 3 Dmod2
.MODEL Dmod2 D IS=1E-15 N=0.5
RZ2 2 5 0.33
D3 6 5 Dmod2
EV1 1 4 16 18 1
EV2 1 6 16 18 1.07
IBV 0 16 0.001
RBV 16 0 Rmod2 47750
.MODEL Rmod2 RES TC1=8.3E-4
D4 18 0 Dmod2
IT 0 18 0.001
.ENDS SMCJ24A
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=10NOV2010
*VERSION=1
*
.SUBCKT SMCJ24A 7 1
*------connections-------Anode Cathode
*
L1 7 2 2E-9
*Forward
D1 2 1 Dmod1
.MODEL Dmod1 D IS=4E-12 N=1.18 XTI=6 RS=0.012 CJO=2700E-12 VJ=0.6 M=0.45 TT=5.2E-7
C1 1 2 300E-12
*Leakage
RL 1 2 5E6
*Reverse
RZ1 2 3 0.14
D2 4 3 Dmod2
.MODEL Dmod2 D IS=1E-15 N=0.5
RZ2 2 5 0.055
D3 6 5 Dmod2
EV1 1 4 16 18 1
EV2 1 6 16 18 1.05
IBV 0 16 0.001
RBV 16 0 Rmod2 27700
.MODEL Rmod2 RES TC1=8.3E-4
D4 18 0 Dmod2
IT 0 18 0.001
.ENDS SMCJ24A
*
*$


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=30/01/2015
*VERSION=1

.model SMCJ33A D(IS=.1u RS=0.2 CJO=80000p M=1.3 VJ=0.4 ISR=.008u N=1.05 IKF=1m BV=34.3 NBV=20 IBV=10u TT=4n EG=.84 TRS1=.1m) 



*         (c)  2015 Diodes Inc
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*

.SIMULATOR DEFAULT


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=28/1/2016
*VERSION=1


.model SMBJ60CA D(IS=.1u RS=0.005 CJO=8000p M=1.3 VJ=0.4 ISR=.008u N=1.05 IKF=1m BV=6 NBV=10 IBV=200u TT=4n EG=.84 TRS1=.1m)

*         (c)  2016 Diodes Inc
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*

.SIMULATOR DEFAULT


*SRC=BZT52C4V7;DI_BZT52C4V7;Diodes;Zener <=10V; 4.70V  0.500W   Diodes Inc.
-
*SYM=HZEN
.SUBCKT DI_BZT52C4V7  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.27
.MODEL DF D ( IS=43.8p RS=35.2 N=1.10
+ CJO=357p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.77f RS=64.5 N=3.00).ENDS



*SRC=BZT52C6V2S;DI_BZT52C6V2S;Diodes;Zener <=10V; 6.20V  0.200W   Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZT52C6V2S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.10
.MODEL DF D ( IS=13.3p RS=31.8 N=1.10
+ CJO=79.4p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.66f RS=2.30 N=1.49 ).ENDS



*SRC=BZX84C11TS;DI_BZX84C11TS;Diodes;Zener 10V-50V; 11.0V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C11TS  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 8.76
.MODEL DF D ( IS=7.49p RS=30.1 N=1.10
+ CJO=45.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.50f RS=4.60 N=2.97 ).ENDS



*SRC=BZX84C13S;DI_BZX84C13S;Diodes;Zener 10V-50V; 13.0V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C13S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 10.7
.MODEL DF D ( IS=6.34p RS=29.7 N=1.10
+ CJO=40.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.27f RS=14.5 N=3.00 ).ENDS



*SRC=BZX84C24S;DI_BZX84C24S;Diodes;Zener 10V-50V; 24.0V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node
*SYM=HZEN
.SUBCKT DI_BZX84C24S  1 2
*        Terminals    A   K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 21.4
.MODEL DF D ( IS=3.43p RS=27.9 N=1.10
+ CJO=28.9p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.87e-016 RS=54.5 N=3.00 ).ENDS



*---------- DMP25H18DLFDE Spice Model ----------
.SUBCKT DMP25H18DLFDE 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 9.589 
RS 30 3 0.001 
RG 20 2 13.33 
CGS 2 3 7.775E-011 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1.8E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.1628 KAPPA = 19.32 VTO = -1.523 
.MODEL DCGD D CJO = 7.161E-011 VJ = 0.6 M = 0.7774 
.MODEL DSUB D IS = 3.284E-010 N = 1.445 RS = 0.08438 BV = 268 CJO = 9.098E-011 VJ = 0.6 M = 0.6 TT = 4.2E-008 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP25H18DLFDE Spice Model v1.0M Last Revised 2017/1/9


*---------- DMN30H4D0L Spice Model ----------
.SUBCKT DMN30H4D0L 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 2.239 
RS 30 3 0.001 
RG 20 2 1.53 
CGS 2 3 2E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 3.9E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.514 
+ TOX = 6E-008 NSUB = 1E+016 KP = 3.1 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.204E-010 VJ = 0.1 M = 0.5744 
.MODEL DSUB D IS = 5.479E-008 N = 1.755 RS = 0.04325 BV = 334 CJO = 1.2E-010 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN30H4D0L Spice Model v1.0M Last Revised 2017/1/18


*SBR02M30LP Spice Model v1.0 Last Revised 1/20/2017  Diodes Inc SUPER BARRIER RECTIFIER
 SIMULATOR=SPICE3
.MODEL DI_SBR02M30LP D  ( IS=87.49n RS=387.2m BV=35.00 IBV=1.000m
+ CJO=59.00p M=110.0k N=1.045 TT=20.00n EG=480.0m VJ=1.100 )

*                (c)  2015 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan


*---------- DMG10N60SCT Spice Model ----------
.SUBCKT DMG10N60SCT 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.5888 
RS 30 3 0.001 
RG 20 2 1.5 
CGS 2 3 1.548E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.25E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.606 
+ TOX = 6E-008 NSUB = 1E+016 KP = 3.779 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1E-009 VJ = 0.6 M = 0.8 
.MODEL DSUB D IS = 2.227E-010 N = 1.213 RS = 0.01007 BV = 694 CJO = 1.726E-009 VJ = 0.6787 M = 0.8 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMG10N60SCT Spice Model v1.0M Last Revised 2016/12/5


*---------- DMN3110LCP3 Spice Model ----------
.SUBCKT DMN3110LCP3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.03826 
RS 30 3 0.001 
RG 20 2 21.38 
CGS 2 3 1.1E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.25E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8378 
+ TOX = 6E-008 NSUB = 1E+016 KP = 13.63 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 2.572E-011 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 4.441E-010 N = 1.189 RS = 0.1195 BV = 30.8 CJO = 2E-010 VJ = 0.6 M = 0.6 TT=2.6E-09
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN3110LCP3 Spice Model v1.0M Last Revised 2016/7/7


*---------- DMG3N60SCT Spice Model ----------
.SUBCKT DMG3N60SCT 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 2.225 
RS 30 3 0.001 
RG 20 2 1.5 
CGS 2 3 3.373E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 6.5E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 
+ VTO = 3.4 TOX = 6E-008 NSUB = 1E+016 KP = 1.179 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 3.727E-010 VJ = 0.6564 M = 0.8 
.MODEL DSUB D IS = 2.232E-010 N = 1.328 RS = 0.02148 BV = 650 CJO = 5.32E-010 VJ = 0.6625 M = 0.7963 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMG3N60SCT Spice Model v1.0 Last Revised 2016/12/9


*DFLU1200 Spice Model v1.0  01/12/2017  Diodes Inc SuperFast Recovery Rectifier

.MODEL DI_DFLU1200 D (
+LEVEL    = 1              IS       = 11n            RS       = 44.7m       
+N        = 1.10     	   BV       = 200            IBV      = 5e-06          
+CJO      = 45p     	   VJ       = 0.468489       MJ       = 0.395956       
+FC       = 0.5            XTI      = 3.14412        EG       = 1.11        
+TT       = 33e-9          IKF      = 6.06945e-06    TRS1     = -0.00446639    
+TRS2     = 9.32759e-06     )

*(c)  2017 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Incorporated, 4949 Hedgcoxe Rd, Suite 110, Plano, TX 75024, USA


*---------- DMTH6016LSDQ Spice Model ----------
.SUBCKT DMTH6016LSDQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.006728 
RS 30 3 0.001 
RG 20 2 1.35 
CGS 2 3 8.475E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 6E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.61 
+ TOX = 6E-008 NSUB = 1E+016 KP = 37.72 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 3.945E-010 VJ = 0.8 M = 0.6507 
.MODEL DSUB D IS = 2.448E-010 N = 1.248 RS = 0.006471 BV = 60 CJO = 5.274E-010 VJ = 0.8 M = 0.6 TT=2.2E-010
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH6016LSDQ Spice Model v1.0 Last Revised 2017/2/3



*SRC=DXT751Q;DI_DXT751Q;BJTs PNP; Si;  60.0V  3.00A  145MHz    
.MODEL DI_DXT751  PNP (IS=8.12f NF=1.00 BF=171 VAF=139
+ IKF=2.97 ISE=16.9f NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=4.50 RE=27.3m RB=0.109 RC=10.9m
+ XTB=1.5 CJE=421p VJE=1.10 MJE=0.500 CJC=79.3p VJC=0.300
+ MJC=0.300 TF=719p TR=71.5n EG=1.12 )


*---------- DMN6069SFGQ Spice Model ----------
.SUBCKT DMN6069SFGQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.03539 
RS 30 3 1E-008 
RG 20 2 2.16 
CGS 2 3 7.47E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5.1E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.641 
+ TOX = 6E-008 NSUB = 1E+016 KP = 36.47 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 2.225E-010 VJ = 0.3984 M = 0.4935 
.MODEL DSUB D IS = 2.365E-010 N = 1.257 RS = 0.006622 BV = 72 CJO = 2.225E-010 VJ = 0.1191 M = 0.564 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN6069SFGQ  Spice Model v1.0 Last Revised 2017/1/26


*---------- DMN3065LW Spice Model ----------
.SUBCKT DMN3065LW 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01938 
RS 30 3 0.001 
RG 20 2 2.05 
CGS 2 3 4.156E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5.7E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.394 
+ TOX = 6E-008 NSUB = 1E+016 KP = 32.82 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 3.123E-010 VJ = 0.6 M = 0.6 
.MODEL DSUB D IS = 2.225E-010 N = 1.229 RS = 0.02329 BV = 35 CJO = 2.22E-010 VJ = 0.6 M = 0.6211 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN3065LW Spice Model v1.0M Last Revised 2017/2/14


*---------- DMN6070SY Spice Model ----------

.SUBCKT DMN6070SY_N 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.04411 
RS 30 3 0.001 
RG 20 2 1.31 
CGS 2 3 7.136E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 3.4E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.463 
+ TOX = 6E-008 NSUB = 1E+016 KP = 15.76 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.389E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.333E-010 N = 1.31 RS = 0.01036 BV = 60 CJO = 8.659E-011 VJ = 0.706 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMN6070SY Spice Model v1.0M Last Revised 2016/4/8



*---------- DMG7N65SCT Spice Model ----------
.SUBCKT DMG7N65SCT 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 1.115 
RS 30 3 0.001 
RG 20 2 1.36 
CGS 2 3 8.891E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 9.5E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.384 
+ TOX = 6E-008 NSUB = 1E+016 KP = 4.959 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 9.065E-010 VJ = 0.6 M = 0.8 
.MODEL DSUB D IS = 2.314E-010 N = 1.255 RS = 0.01304 BV = 687 CJO = 1.426E-009 VJ = 0.7128 M = 0.8 TT=1.35E-07
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMG7N65SCT Spice Model v1.0 Last Revised 2016/12/31



*---------- DMG7N65SCTI Spice Model ----------
.SUBCKT DMG7N65SCTI 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 1.115 
RS 30 3 0.001 
RG 20 2 1.36 
CGS 2 3 8.891E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 9.5E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.384 
+ TOX = 6E-008 NSUB = 1E+016 KP = 4.959 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 9.065E-010 VJ = 0.6 M = 0.8 
.MODEL DSUB D IS = 2.314E-010 N = 1.255 RS = 0.01304 BV = 687 CJO = 1.426E-009 VJ = 0.7128 M = 0.8 TT=1.35E-07
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMG7N65SCTI Spice Model v1.0 Last Revised 2016/12/31



*---------- DMG7N65SJ3 Spice Model ----------
.SUBCKT DMG7N65SJ3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 1.115 
RS 30 3 0.001 
RG 20 2 1.36 
CGS 2 3 8.891E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 9.5E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.384 
+ TOX = 6E-008 NSUB = 1E+016 KP = 4.959 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 9.065E-010 VJ = 0.6 M = 0.8 
.MODEL DSUB D IS = 2.314E-010 N = 1.255 RS = 0.01304 BV = 687 CJO = 1.426E-009 VJ = 0.7128 M = 0.8 TT=1.35E-07
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMG7N65SJ3 Spice Model v1.0 Last Revised 2016/12/31



*---------- DMG8N65SCT Spice Model ----------
.SUBCKT DMG8N65SCT 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 1.115 
RS 30 3 0.001 
RG 20 2 1.36 
CGS 2 3 8.891E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 9.5E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.384 
+ TOX = 6E-008 NSUB = 1E+016 KP = 4.959 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 9.065E-010 VJ = 0.6 M = 0.8 
.MODEL DSUB D IS = 2.314E-010 N = 1.255 RS = 0.01304 BV = 687 CJO = 1.426E-009 VJ = 0.7128 M = 0.8 TT=1.35E-07
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMG8N65SCT Spice Model v1.0 Last Revised 2016/12/31



*---------- DMG3N60SJ3 Spice Model ----------
.SUBCKT DMG3N60SJ3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 2.225 
RS 30 3 0.001 
RG 20 2 1.5 
CGS 2 3 3.373E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 6.5E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 
+ VTO = 3.4 TOX = 6E-008 NSUB = 1E+016 KP = 1.179 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 3.727E-010 VJ = 0.6564 M = 0.8 
.MODEL DSUB D IS = 2.232E-010 N = 1.328 RS = 0.02148 BV = 650 CJO = 5.32E-010 VJ = 0.6625 M = 0.7963 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMG3N60SJ3 Spice Model v1.0 Last Revised 2016/12/9


*---------- DMN60H3D5SK3 Spice Model ----------
.SUBCKT DMN60H3D5SK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 2.225 
RS 30 3 0.001 
RG 20 2 1.5 
CGS 2 3 3.373E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 6.5E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 
+ VTO = 3.4 TOX = 6E-008 NSUB = 1E+016 KP = 1.179 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 3.727E-010 VJ = 0.6564 M = 0.8 
.MODEL DSUB D IS = 2.232E-010 N = 1.328 RS = 0.02148 BV = 650 CJO = 5.32E-010 VJ = 0.6625 M = 0.7963 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN60H3D5SK3 Spice Model v1.0 Last Revised 2016/12/9


*---------- DMN1004UFV Spice Model ----------
.SUBCKT DMN1004UFV 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001015 
RS 30 3 0.001 
RG 20 2 2.2 
CGS 2 3 1.851E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.2E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8155 
+ TOX = 6E-008 NSUB = 1E+016 KP = 494.3 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.933E-009 VJ = 0.7844 M = 0.6 
.MODEL DSUB D IS = 1.631E-008 N = 1.136 RS = 0.007419 BV = 14 CJO = 5.543E-010 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN1004UFV Spice Model v1.0M Last Revised 2016/5/26



*---------- DMHC4035LSDQ Spice Model ----------

*NMOS

.SUBCKT DMHC4035LSDQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.02213 
RS 30 3 0.001 
RG 20 2 1.56 
CGS 2 3 5.488E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 6E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.146 
+ TOX = 6E-008 NSUB = 1E+016 KP = 30.04 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 2.594E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.405E-010 N = 1.261 RS = 0.01477 BV = 43 CJO = 2.653E-010 VJ = 0.8 M = 0.6 TT=3E-09
.MODEL DLIM D IS = 0.0001 
.ENDS



*PMOS

.SUBCKT DMHC4035LSDQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.04326 
RS 30 3 0.001 
RG 20 2 13.07 
CGS 2 3 5.846E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 4.5E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 8.014 KAPPA = 19.32 VTO = -1.583 
.MODEL DCGD D CJO = 1.5E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.222E-010 N = 1.255 RS = 0.0255 BV = 43 CJO = 3E-010 VJ = 0.8 M = 0.6 TT = 7E-009 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMHC4035LSDQ Spice Model v1.0M Last Revised 2016/12/23


*TITLE=BCR402UW6Q*DATE=12/05/2016
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*VERSION=1

*PIN ORDER 1:GND 2:OUT 3:OUT 4:VS 5:OUT 6:Rext

.SUBCKT BCR402UW6 1 6 2 5 3 4 

Q1 5 8 6 BCRPNP
R1 8 1 22K TC=2m,8u
R2 6 4 44 TC=3.5m,6u
Rshort23 2 3 1m
Rshort35 3 5 1m
D1 4 9 BCRdiode
D2 9 8 BCRdiode


.MODEL BCRPNP PNP (IS=100.000f NF=0.995 BF=440 VAF=4.000 IKF=.14
+ ISE=.55n NE=2.234 NR=1.005 BR=4.800 ISC=0.125P NC=2.074
+ RB=1.00 RE=0.82 RC=1.4
+ CJE=10P VJE=0.9000 MJE=0.4
+ CJC=10P VJC=0.900 MJC=0.55 
+ TF=8.600n TR=2.604n XTB=1.900 EG=1.110 XTI=3.300)

.model BCRdiode D(IS=2.4E-16 N=1.06 RS=2 IBV=1.00E-04 BV=7.5E+01 IKF=.15m
+ M=.45 CJO=1E-14 EG=1.11E+00
+ TT=8.66E-012 VJ=1.1E+00 XTI=3.0E+00)


.ENDS



*                (c)  2016 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*TITLE=BCR405UW6Q
*DATE=12/05/2016
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*VERSION=1

*PIN ORDER 1:GND 2:OUT 3:OUT 4:VS 5:OUT 6:Rext

.SUBCKT BCR405UW6 1 6 2 5 3 4 

Q1 5 8 6 BCRPNP
R1 8 1 22K TC=2m,8u
R2 6 4 16.5 TC=4m,6u
Rshort23 2 3 1m
Rshort35 3 5 1m
D1 4 9 BCRdiode
D2 9 8 BCRdiode


.MODEL BCRPNP PNP (IS=220.000f NF=0.995 BF=440 VAF=4.000 IKF=.18
+ ISE=.55n NE=2.234 NR=1.005 BR=4.800 ISC=0.125P NC=2.074
+ RB=1.00 RE=0.82 RC=1.4
+ CJE=10P VJE=0.9000 MJE=0.4
+ CJC=10P VJC=0.900 MJC=0.55 
+ TF=8.600n TR=2.604n XTB=1.900 EG=1.110 XTI=3.300)

.model BCRdiode D(IS=2.4E-16 N=1.06 RS=2 IBV=1.00E-04 BV=7.5E+01 IKF=.08m
+ M=.45 CJO=1E-14 EG=1.11E+00
+ TT=8.66E-012 VJ=1.1E+00 XTI=3.0E+00)


.ENDS

*                (c)  2016 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*TITLE=BCR401UW6Q*
DATE=12/05/2016
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*VERSION=1




*PIN ORDER 1:GND 2:OUT 3:OUT 4:VS 5:OUT 6:Rext

.SUBCKT BCR401UW6 1 6 2 5 3 4 

Q1 5 8 6 BCRPNP
R1 8 1 22K TC=2m,8u
R2 6 4 91 TC=3.5m,6u
Rshort23 2 3 1m
Rshort35 3 5 1m
D1 4 9 BCRdiode
D2 9 8 BCRdiode


.MODEL BCRPNP PNP (IS=100.000f NF=0.995 BF=440 VAF=4.000 IKF=.14
+ ISE=.55n NE=2.234 NR=1.005 BR=4.800 ISC=0.125P NC=2.074
+ RB=1.00 RE=0.82 RC=1.4
+ CJE=10P VJE=0.9000 MJE=0.4
+ CJC=10P VJC=0.900 MJC=0.55 
+ TF=8.600n TR=2.604n XTB=1.900 EG=1.110 XTI=3.300)

.model BCRdiode D(IS=2.4E-16 N=1.06 RS=2 IBV=1.00E-04 BV=7.5E+01 IKF=.15m
+ M=.45 CJO=1E-14 EG=1.11E+00
+ TT=8.66E-012 VJ=1.1E+00 XTI=3.0E+00)


.ENDS



*                (c)  2016 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


---------- DMP3056L Spice Model ----------
.SUBCKT DMP3056L 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.02496 
RS 30 3 0.001 
RG 20 2 11.1 
CGS 2 3 8.938E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 8.92E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 2.425E+005 KP = 27.53 ETA = 0.0001 TOX = 6E-008 NSUB = 1E+017 KAPPA = 2.932 VTO = -1.9 
.MODEL DCGD D CJO = 4.013E-010 VJ = 0.3844 M = 0.3457 
.MODEL DSUB D IS = 2.245E-010 N = 1.343 RS = 0.01819 BV = 35 CJO = 7.964E-011 VJ = 3.068 M = 0.9583 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMC3036L Spice Model v2.0 Last Revised 2017/3/1


*---------- DMN2300UFL4 Spice Model ----------
.SUBCKT DMN2300UFL4 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.1046 
RS 30 3 0.001 
RG 20 2 68.51 
CGS 2 3 6.5E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.06E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8391 
+ TOX = 6E-008 NSUB = 1E+016 KP = 6.998 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 4E-011 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 1.831E-009 N = 1.251 RS = 0.4309 BV = 22 CJO = 1E-011 VJ = 0.6 M = 0.748 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN2300UFL4 Spice Model v1.0M Last Revised 2017/3/6



*---------- DMN2300UFD Spice Model ----------
.SUBCKT DMN2300UFD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.1046 
RS 30 3 0.001 
RG 20 2 68.51 
CGS 2 3 6.5E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.06E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8391 
+ TOX = 6E-008 NSUB = 1E+016 KP = 6.998 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 4E-011 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 1.831E-009 N = 1.251 RS = 0.4309 BV = 22 CJO = 1E-011 VJ = 0.6 M = 0.748 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN2300UFD Spice Model v1.0M Last Revised 2017/3/6



*---------- DMN2300UFB4 Spice Model ----------
.SUBCKT DMN2300UFB4 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.1046 
RS 30 3 0.001 
RG 20 2 68.51 
CGS 2 3 6.5E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.06E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8391 
+ TOX = 6E-008 NSUB = 1E+016 KP = 6.998 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 4E-011 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 1.831E-009 N = 1.251 RS = 0.4309 BV = 22 CJO = 1E-011 VJ = 0.6 M = 0.748 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN2300UFB4 Spice Model v1.0M Last Revised 2017/3/6



*---------- DMN2300UFB Spice Model ----------
.SUBCKT DMN2300UFB 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.1046 
RS 30 3 0.001 
RG 20 2 68.51 
CGS 2 3 6.5E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.06E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8391 
+ TOX = 6E-008 NSUB = 1E+016 KP = 6.998 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 4E-011 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 1.831E-009 N = 1.251 RS = 0.4309 BV = 22 CJO = 1E-011 VJ = 0.6 M = 0.748 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN2300UFB Spice Model v1.0M Last Revised 2017/3/6



*---------- DMN2300U Spice Model ----------
.SUBCKT DMN2300U 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.1046 
RS 30 3 0.001 
RG 20 2 68.51 
CGS 2 3 6.5E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.06E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8391 
+ TOX = 6E-008 NSUB = 1E+016 KP = 6.998 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 4E-011 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 1.831E-009 N = 1.251 RS = 0.4309 BV = 22 CJO = 1E-011 VJ = 0.6 M = 0.748 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN2300U Spice Model v1.0M Last Revised 2017/3/6



*---------- DMP1011LFV Spice Model ----------
.SUBCKT DMP1011LFV 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.004 
RS 30 3 0.001 
RG 20 2 1.85 
DDIO 20 3 LEGD
CGS 2 3 8.665E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 6.5E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 65.42 KAPPA = 19.32 VTO = -1.011 
.MODEL DCGD D CJO = 2.008E-010 VJ = 0.8 M = 0.6424 
.MODEL DSUB D IS = 9.223E-010 N = 1.195 RS = 0.007458 BV = 14.8 CJO = 6.473E-010 VJ = 1.704 M = 0.3114 TT = 6.7E-009 
.MODEL DLIM D IS = 0.0001 
.MODEL LEGD D IS = 5E-009  N = 1.089  RS = 0.004  BV = 7
.ENDS
*Diodes DMP1011LFV Spice Model v1.0M Last Revised 2016/7/20


*---------- DMP2023UFDF Spice Model ----------
.SUBCKT DMP2023UFDF 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01569 
RS 30 3 0.001 
RG 20 2 14.79 
CGS 2 3 1.643E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 3.95E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 77.07 KAPPA = 19.32 VTO = -0.7749 
.MODEL DCGD D CJO = 1.6E-009 VJ = 0.6 M = 0.7394 
.MODEL DSUB D IS = 1.175E-008 N = 1.161 RS = 0.0337 BV = 30 CJO = 3E-010 VJ = 0.6 M = 0.6625 TT=2.3E-08
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP2023UFDF Spice Model v1.0M Last Revised 2017/3/10



*---------- DMTH10H005LCT Spice Model ----------
.SUBCKT DMTH10H005LCT 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001629 
RS 30 3 0.001 
RG 20 2 0.75 
CGS 2 3 4.821E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 6E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.467 
+ TOX = 6E-008 NSUB = 1E+016 KP = 92.66 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 6.93E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.249E-010 N = 1.121 RS = 0.003 BV = 108 CJO = 4E-009 VJ = 0.8 M = 0.6 TT = 3.3E-008 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH10H005LCT Spice Model v1.0M Last Revised 2016/11/18


*---------- DMT32M5LFG Spice Model ----------
.SUBCKT DMT32M5LFG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 5.43E-006 
RS 30 3 0.001 
RG 20 2 0.71 
CGS 2 3 3.753E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.15E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 1 VTO = 1.7 TOX = 6E-008 KP = 299.5 
.MODEL DCGD D CJO = 1.805E-009 VJ = 0.8 M = 0.6038 
.MODEL DSUB D IS = 2.221E-010 N = 1.18 RS = 4.441E-010 BV = 38 CJO = 3E-009 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT32M5LFG Spice Model v1.0 Last Revised 2016/12/31


*---------- DMP2005UFG Spice Model ----------
.SUBCKT DMP2005UFG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001373 
RS 30 3 0.001 
RG 20 2 3.49 
CGS 2 3 4.4E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 6.5E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 229.3 KAPPA = 19.32 VTO = -1.122 
.MODEL DCGD D CJO = 4.2E-009 VJ = 0.6 M = 0.6142 
.MODEL DSUB D IS = 5.136E-008 N = 1.326 RS = 0.003606 BV = 27 CJO = 1.5E-009 VJ = 0.6 M = 0.7153 TT = 1.233E-008 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP2005UFG Spice Model v1.0M Last Revised 2016/9/14



*---------- DMT69M8LFV Spice Model ----------
.SUBCKT DMT69M8LFV 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.006099 
RS 30 3 1E-008 
RG 20 2 1.71 
CGS 2 3 2.016E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.086 
+ TOX = 6E-008 NSUB = 1E+016 KP = 136.4 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 4.367E-010 VJ = 1 M = 0.5797 
.MODEL DSUB D IS = 2.239E-010 N = 1.183 RS = 0.005972 BV = 67 CJO = 8.953E-010 VJ = 1 M = 0.201 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT69M8LFV  Spice Model v1.0M Last Revised 2016/11/21


*---------- DMHT6016LFJ Spice Model ----------
.SUBCKT DMHT6016LFJ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.006728 
RS 30 3 0.001 
RG 20 2 1.35 
CGS 2 3 8.475E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 6E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.61 
+ TOX = 6E-008 NSUB = 1E+016 KP = 37.72 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 3.945E-010 VJ = 0.8 M = 0.6507 
.MODEL DSUB D IS = 2.448E-010 N = 1.248 RS = 0.006471 BV = 60 CJO = 5.274E-010 VJ = 0.8 M = 0.6 TT=2.2E-010
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMHT6016LFJ Spice Model v1.0 Last Revised 2016/11/23



*---------- DMP6180SK3Q Spice Model ----------
.SUBCKT DMP6180SK3Q 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.04464 
RS 30 3 0.001 
RG 20 2 13 
CGS 2 3 1E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 6.5E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 
+ TOX = 6E-008 NSUB = 1E+016 KP = 10.4 KAPPA = 30.49 VTO = -2.063 
.MODEL DCGD D CJO = 1.881E-010 VJ = 0.6541 M = 0.3655 
.MODEL DSUB D IS = 2.224E-010 N = 1.277 RS = 0.01338 
+ BV = 50 CJO = 1.189E-010 VJ = 0.7738 M = 0.6069 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP6180SK3Q Spice Model v1.0 Last Revised 2013/08/07


*ZETEX FCX591 Spice Model v1.0 Last Revised 8/8/05
    *
    .MODEL FCX591 PNP IS =3.2E-14 BF =170 VAF=45 NF =0.977 IKF=1.25 ISE=7E-15
    +NE =1.35 BR =50 VAR=50 NR =.986 IKR=0.15 ISC=0.9E-14 NC =1.08 RB =0.16
    +RE =0.195 RC =0.185 CJE=104E-12 TF =0.7E-9 CJC=30.5E-12 TR =3E-9 VJC=0.395
    +MJC=0.415
    *
    *$
    *


*---------- DMPH4015SSS Spice Model ----------
.SUBCKT DMPH4015SSS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.00523 
RS 30 3 1E-006 
RG 20 2 7.77 
CGS 2 3 4E-009 
EGD 12 0 1 2 1 
VFB 14 0 0 
FFB 1 2  VFB 1 
CGD 13 14 3.7E-009 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1E+006  ETA = 0.02012  
+ TOX = 5E-008  NSUB = 1E+016  KP = 82.85  KAPPA = 0.001  VTO = -2.609 
.MODEL DCGD D  CJO = 1.762E-009  VJ = 0.4937  M = 0.3181 
.MODEL DSUB D  IS = 1.247E-011  N = 1.091  RS = 0.004133  BV = 45  CJO = 1.6E-009  VJ = 0.437  M = 0.3036 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMPH4015SSS Spice Model v1.0M Last Revised 2016/3/31



*---------- DMPH4015SSSQ Spice Model ----------
.SUBCKT DMPH4015SSSQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.00523 
RS 30 3 1E-006 
RG 20 2 7.77 
CGS 2 3 4E-009 
EGD 12 0 1 2 1 
VFB 14 0 0 
FFB 1 2  VFB 1 
CGD 13 14 3.7E-009 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1E+006  ETA = 0.02012  
+ TOX = 5E-008  NSUB = 1E+016  KP = 82.85  KAPPA = 0.001  VTO = -2.609 
.MODEL DCGD D  CJO = 1.762E-009  VJ = 0.4937  M = 0.3181 
.MODEL DSUB D  IS = 1.247E-011  N = 1.091  RS = 0.004133  BV = 45  CJO = 1.6E-009  VJ = 0.437  M = 0.3036 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMPH4015SSSQ Spice Model v1.0M Last Revised 2016/3/31



*---------- DMPH1006UPS Spice Model ----------
.SUBCKT DMPH1006UPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001194 
RS 30 3 0.001 
RG 20 2 3.22 
CGS 2 3 5.408E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 8E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 175.4 KAPPA = 19.32 VTO = -0.9124 
.MODEL DCGD D CJO = 4.636E-009 VJ = 0.6 M = 0.6 
.MODEL DSUB D IS = 1.613E-008 N = 1.106 RS = 0.007199 BV = 18 CJO = 6.91E-010 VJ = 0.8 M = 0.6 TT = 1.343E-008 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMPH1006UPS Spice Model v1.0M Last Revised 2016/12/13



*---------- DMPH1006UPSQ Spice Model ----------
.SUBCKT DMPH1006UPSQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001194 
RS 30 3 0.001 
RG 20 2 3.22 
CGS 2 3 5.408E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 8E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 175.4 KAPPA = 19.32 VTO = -0.9124 
.MODEL DCGD D CJO = 4.636E-009 VJ = 0.6 M = 0.6 
.MODEL DSUB D IS = 1.613E-008 N = 1.106 RS = 0.007199 BV = 18 CJO = 6.91E-010 VJ = 0.8 M = 0.6 TT = 1.343E-008 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMPH1006UPSQ Spice Model v1.0M Last Revised 2016/12/13



*---------- DMP3017SFV Spice Model ----------
.SUBCKT DMP3017SFV 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.005039 
RS 30 3 0.001 
RG 20 2 8.36 
CGS 2 3 1.93E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 1.6E-009 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1E+006  ETA = 0.001 
+ TOX = 6E-008  NSUB = 1E+016  KP = 46.32  KAPPA = 49.86  VTO = -2.2 
.MODEL DCGD D  CJO = 1.115E-009  VJ = 0.6515  M = 0.3641 
.MODEL DSUB D  IS = 4.862E-012  N = 1.048  RS = 0.005212  BV = 50  CJO = 7.568E-011  VJ = 0.8  M = 0.6 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMP3017SFV Spice Model v1.0 Last Revised 2015/3/26



*---------- 2N7002DWA Spice Model ----------
.SUBCKT N7002DWA 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 1.728 
RS 30 3 0.001 
RG 20 2 1.23 
CGS 2 3 2.5E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5.8E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.754 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.4647 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.2E-011 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 5.923E-009 N = 1.912 RS = 0.08286 BV = 73 CJO = 4E-012 VJ = 0.7586 M = 0.6096 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes N7002DWA Spice Model v1.0M Last Revised 2016/10/4


*DFLS260 Spice Model v1.0 Last Revised 3/21/2017  Diodes Inc SUPER BARRIER RECTIFIER
 SIMULATOR=SPICE3
.MODEL DI_DFLS260 D  ( IS=721.4n RS=80.00m BV=60.00 IBV=10.00
+ CJO=320.8p M=450.7m N=1.029 TT=10.00n EG=480.0m VJ=292.4m )

*                (c)  2017 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan


*---------- DMPH6023SK3 Spice Model ----------
.SUBCKT DMPH6023SK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01605 
RS 30 3 0.001 
RG 20 2 4.99 
CGS 2 3 2.839E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1.75E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 56.71 KAPPA = 49.86 VTO = -2.33 
.MODEL DCGD D CJO = 8.252E-010 VJ = 1 M = 0.5463 
.MODEL DSUB D IS = 2.343E-010 N = 1.216 RS = 0.003391 BV = 71.9 CJO = 1.513E-010 VJ = 0.1 M = 0.1851 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMPH6023SK3 Spice Model v1.0 Last Revised 2016/8/3


*---------- DMN2990UDJQ Spice Model ----------
.SUBCKT DMN2990UDJQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.3366 
RS 30 3 0.001 
RG 20 2 216.8 
CGS 2 3 2.5E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 8E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8158 
+ TOX = 6E-008 NSUB = 1E+016 KP = 2.327 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1E-011 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 9.72E-010 N = 1.305 RS = 1.559 BV = 22 CJO = 5E-012 VJ = 0.6 M = 0.748  
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN2990UDJQ Spice Model v1.0M Last Revised 2017/2/8



*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*DATE=31/03/2017
*VERSION=1

*PIN ORDER 1:NC 2:OUT 3:NC 4:EN 5:Rext 6:GND

.SUBCKT BCR421UFD 1 2 3 4 5 6 
Q1 2 8 5 BCRNPN
R1 4 8 1.5K TC1=0.2m
R2 5 6 95 TC1=2m
D1 8 9 BCRdiode
D2 9 6 BCRdiode

.MODEL BCRNPN NPN IS=300e-11 NF=1.2 ISE=30e-15 NE=1.2 BF=350
+ VAF=10 IKF=300m ISC=2e-13 NC=1.2 BR=15 NR=1 RE=0.01
+ RB=0.33 RC=0.01 CJE=60e-12 VJE=0.55 MJE=0.36 CJC=15e-12 VJC=0.5
+ MJC=0.35 TF=1e-9 TR=4e-9  QUASIMOD=1 RCO=1 GAMMA=1.3e-9 NK=.6
+ XTB=1.4 TRE1=0.004 TRB1=0.003 TRC1=0.004

.model BCRdiode D(IS=10f RS=.01 N=1.05 IKF=1m CJO=.5p M=0.3 VJ=0.7
+ BV=3 XTI=10)
.ENDS

.SIMULATOR DEFAULT

*                (c)  2017 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*DATE=31/03/2017
*VERSION=1

*PIN ORDER 1:NC 2:OUT 3:NC 4:EN 5:Rext 6:GND

.SUBCKT BCR420UFD 1 2 3 4 5 6

Q1 2 8 5 BCRNPN
R1 4 8 20K TC1=0.2m
R2 5 6 95 TC1=2m
D1 8 9 BCRdiode
D2 9 6 BCRdiode

.MODEL BCRNPN NPN IS=300e-11 NF=1.2 ISE=30e-15 NE=1.2 BF=350
+ VAF=10 IKF=300m ISC=2e-13 NC=1.2 BR=15 NR=1 RE=0.01
+ RB=0.33 RC=0.01 CJE=60e-12 VJE=0.55 MJE=0.36 CJC=15e-12 VJC=0.5
+ MJC=0.35 TF=1e-9 TR=4e-9  QUASIMOD=1 RCO=1 GAMMA=1.3e-9 NK=.55
+ XTB=1.4 TRE1=0.004 TRB1=0.003 TRC1=0.004

.model BCRdiode D(IS=3f RS=.01 N=1.05 IKF=1m CJO=.5p M=0.3 VJ=0.7
+ BV=3 XTI=12.5)

.ENDS

.SIMULATOR DEFAULT

*                (c)  2017 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL



*---------- DMN31D6UT Spice Model ----------
.SUBCKT DMN31D6UT D=10 G=20 S=30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.6513 
RS 30 3 1E-008 
RG 20 2 252 
CGS 2 3 1.074E-014 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 8E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 1.159 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.5657 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 8.453E-012 VJ = 1 M = 0.9082 
.MODEL DSUB D IS = 9.654E-008 N = 2.227 RS = 0.3077 BV = 35 CJO = 1.069E-014 VJ = 1 M = 0.9133 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN31D6UT  Spice Model v1.0 Last Revised 2015/9/7



*---------- DMP3098LQ Spice Model ----------
.SUBCKT DMP3098LQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.0434 
RS 30 3 0.001 
RG 20 2 14.77 
CGS 2 3 4.782E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 5.4E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 8.923 KAPPA = 19.32 VTO = -2.061 
.MODEL DCGD D CJO = 2.071E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.524E-010 N = 1.412 RS = 0.04459 BV = 33 CJO = 3.071E-011 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP3098LQ Spice Model v1.0M Last Revised 2017/3/14



*---------- DMP3026SFDF Spice Model ----------
.SUBCKT DMP3026SFDF 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.009697 
RS 30 3 0.001 
RG 20 2 15.56 
CGS 2 3 1.185E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 6.5E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 21.21 KAPPA = 19.32 VTO = -2.826 
.MODEL DCGD D CJO = 2.5E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.381E-010 N = 1.297 RS = 0.003867 BV = 38 CJO = 2.5E-010 VJ = 0.8 M = 0.6 TT = 5.11E-009 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP3026SFDF Spice Model v1.0M Last Revised 2016/9/5



*---------- DMP6110SSDQ Spice Model ----------
.SUBCKT DMP6110SSDQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.04464 
RS 30 3 0.001 
RG 20 2 13 
CGS 2 3 1E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 6.5E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 
+ TOX = 6E-008 NSUB = 1E+016 KP = 10.4 KAPPA = 30.49 VTO = -2.063 
.MODEL DCGD D CJO = 1.881E-010 VJ = 0.6541 M = 0.3655 
.MODEL DSUB D IS = 2.224E-010 N = 1.277 RS = 0.01338 
+ BV = 50 CJO = 1.189E-010 VJ = 0.7738 M = 0.6069 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP6110SSDQ Spice Model v1.0 Last Revised 2015/12/03



*---------- DMN60H4D5SK3 Spice Model ----------
.SUBCKT DMN60H4D5SK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 3.191 
RS 30 3 0.001 
RG 20 2 3.45 
CGS 2 3 2.604E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 3.3E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.302 
+ TOX = 6E-008 NSUB = 1E+016 KP = 1.248 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 2.826E-010 VJ = 0.7299 M = 0.8 
.MODEL DSUB D IS = 2.466E-010 N = 1.339 RS = 0.02508 BV = 654 CJO = 3.749E-010 VJ = 0.7748 M = 0.8 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN60H4D5SK3 Spice Model v1.0 Last Revised 2017/3/1


*---------- DMJ65H900HCTI Spice Model ----------
.SUBCKT DMJ70H600SH3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.3681 
RS 30 3 0.001 
RG 20 2 3.94 
CGS 2 3 6.303E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 6.6E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.027 
+ TOX = 6E-008 NSUB = 1E+016 KP = 1.26 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 7.15E-010 VJ = 0.6 M = 0.8 
.MODEL DSUB D IS = 2.295E-010 N = 1.299 RS = 0.007844 BV = 772 CJO = 4E-009 VJ = 0.6 M = 0.8 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMJ65H900HCTI Spice Model v1.0 Last Revised 2017/3/1



*---------- DMN80H2D0SCTI Spice Model ----------
.SUBCKT DMN80H2D0SCTI 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 1.236 
RS 30 3 0.001 
RG 20 2 1.48 
CGS 2 3 1.233E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.45E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.589 
+ TOX = 6E-008 NSUB = 1E+016 KP = 1.74 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.207E-009 VJ = 0.6875 M = 0.8 
.MODEL DSUB D IS = 2.36E-010 N = 1.257 RS = 0.009393 BV = 877 CJO = 1.307E-009 VJ = 0.8 M = 0.8 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN80H2D0SCTI Spice Model v1.0 Last Revised 2017/3/2


*---------- DMN1260UFA Spice Model ----------
.SUBCKT DMN1260UFA 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.07116 
RS 30 3 0.001 
RG 20 2 376.2 
CGS 2 3 4.8E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.48E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7455 
+ TOX = 6E-008 NSUB = 1E+016 KP = 5.146 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 5.425E-011 VJ = 0.7999 M = 0.6 
.MODEL DSUB D IS = 2.321E-010 N = 1.095 RS = 1.469 BV = 16 CJO = 8E-012 VJ = 0.6 M = 0.748 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN1260UFA Spice Model v1.0M Last Revised 2017/4/17


*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=30Dec2016
*VERSION=1

*PIN ORDER 1=Vcc, 2=Vb, 3=HO, 4=Vs, 5=NC, 6=DT, 7=EN, 8=IN, 9=COM, 10=LO 
.SUBCKT DGD0506 1 2 3 4 5 6 7 8 9 10


Rvcc 1 11 1m
Rlo 14 10 1m
Rvb 51 2 1m
Rho 54 3 1m
Rvs 55 4 1m
Rdt 21 6 1m
Rin 28 8 1m
Rcom 15 9 1m

D12 11 51 Dboost
Q1l 11 12 13 Small_drive_npn
Q2l 11 13 14 large_drive_npn
Q3l 15 12 13 small_drive_pnp
Q4l 15 13 14 large_drive_pnp

R11_12 80 12 20
C12_15 12 15 800p

SbaseL 12 15 20 15 SMODl
.MODEL SMODl VSWITCH(VOFF=14 VON=10 RON=10m ROFF=5meg)

Glow 20 15 22 15 -1m

Rilow 20 15 5k
cilow 20 15 15p

D1 30 20 DMOD
D2 30 15 DMOD
.MODEL DMOD D(BV=13)


Cdt 22 15 8p
Qisource 22 23 24 DTpnp1
Qiset 21 23 25 DTpnp1
Rshort 21 23 1m
M1 24 26 25 25 PFET
M2 22 26 15 15 NFET

.MODEL PFET PMOS (LEVEL=3 VTO=-1 TOX=10.4E-8 NSUB=3.5E+14 KP=30 NFS=15.7E+11 IS=1E-15 N=10)
.MODEL NFET NMOS (VTO=2.474 RS=1.68 RD=0.0 IS=1E-15 KP=0.296 CBD=1P PB=1 LAMBDA=267E-6)


V1 25 15 5
R2 26 27 100
V2 27 15 5
Sthreshold 26 15 28 15 SMODth
.MODEL SMODth VSWITCH(VOFF=2.4 VON=3 RON=10m ROFF=5meg)


Q1h 51 52 53 Small_drive_npn
Q2h 51 53 54 large_drive_npn
Q3h 55 52 53 small_drive_pnp
Q4h 55 53 54 large_drive_pnp

RhighGnd 55 15 3meg

R51_52 90 52 20
C52_55 52 55 800p

SbaseH 52 55 60 15 SMODh
.MODEL SMODh VSWITCH(VOFF=14 VON=10 RON=10m ROFF=5meg)

Ghigh 60 15 62 15 -1m

Rihigh 60 15 5k
cihigh 60 15 15p

D1h 40 60 DMOD
D2h 40 15 DMOD

Cdth 62 15 8p
Qisourceh 62 23 64 DTpnp1


M1h 64 66 65 65 PFET
M2h 62 66 15 15 NFET
M3h 66 26 15 15 NFET
Rsupplyh 25 65 1m
Rinhigh 65 66 100

Ren 7 9 4Meg
Ibias 100 7 .5u
Renshort 100 9 .1

SenH 20 15 7 9 SMODenH
SenL 60 15 7 9 SMODenL
.MODEL SMODenH VSWITCH(VOFF=2 VON=1.8 RON=1 ROFF=5meg)
.MODEL SMODenL VSWITCH(VOFF=2 VON=1.8 RON=1 ROFF=5meg)

Ehi 90 55 11 15 .91
Elo 80 15 11 15 1

SvccuvH 20 15 11 15 SMODvccuvH
SvccuvL 60 15 11 15 SMODvccuvL

.MODEL SMODvccuvH VSWITCH(VOFF=6.9 VON=6.6 RON=1 ROFF=5meg)
.MODEL SMODvccuvL VSWITCH(VOFF=6.9 VON=6.6 RON=1 ROFF=5meg)

SvbsuvH 20 15 2 4 SMODvbsuvH
SvbsuvL 60 15 2 4 SMODvbsuvL

.MODEL SMODvbsuvH VSWITCH(VOFF=6.9 VON=6.6 RON=1 ROFF=5meg)
.MODEL SMODvbsuvL VSWITCH(VOFF=6.9 VON=6.6 RON=1 ROFF=5meg)


.model DTpnp1 pnp ( IS=3.58E-14 VAF=90.6 BF=425 IKF=0.0888 NE=1.4466
+    ISE=5.217E-14 IKR=0.03 ISC=2.00E-12 NC=1.5 NR=1 BR=5 RC=0.4 CJC=7.00E-12
+    FC=0.5 MJC=0.45 VJC=0.8 CJE=9.00E-12 MJE=0.33 VJE=0.75 TF=4.70E-10
+    ITF=0.4 VTF=3 XTF=20 RE=1.4 TR=9.00E-08)

.MODEL Small_drive_npn NPN IS=6E-16 NF=1.005 BF=260 IKF=0.007 VAF=51 ISE=2E-16 NE=1.35 
+ BR=25 ISC=1e-15 NC=1.2 RB=160 RE=3 RC=0.6 CJC=0.24E-12 MJC=0.33 VJC=0.7
+ CJE=1.02E-12 MJE=0.3 VJE=0.7
+ TF=10E-9 TR=30e-9
.MODEL large_drive_npn NPN IS=3E-13 NF=1.005 BF=260 IKF=0.7 VAF=51 ISE=1E-14 NE=1.45 
+ BR=25 ISC=1e-13 NC=1.2 RB=2 RE=0.05 RC=0.1 CJC=27E-12 MJC=0.4 VJC=0.7
+ CJE=114E-12 MJE=0.35 VJE=0.7
+ TF=10E-9 TR=30e-9  
.MODEL small_drive_pnp PNP IS=5E-16 NF=1 BF=350 IKF=0.006 VAF=51 ISE=5E-16 NE=1.35 
+ BR=25 ISC=1e-15 NC=1.2 RB=20 RE=5 RC=.6 CJC=0.54E-12 MJC=0.32 VJC=0.5
+ CJE=1.05E-12 MJE=0.2 VJE=0.6
+ TF=10E-9 TR=30e-9
.MODEL large_drive_pnp PNP IS=2.2E-13 NF=1 BF=350 IKF=0.6 VAF=51 ISE=1E-14 NE=1.45 
+ BR=25 ISC=1e-13 NC=1.2 RB=3 RE=0.05 RC=0.1 CJC=35E-12 MJC=0.4 VJC=0.6
+ CJE=125E-12 MJE=0.5 VJE=1
+ TF=10E-9 TR=30e-9 

.MODEL Dboost D(IS=15f RS=8m CJO=150p M=0.3 VJ=0.75 ISR=120n 
+ BV=80 Ibv=100u)

.ENDS

*                (c)  2016 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*---------- DMN65D8LDWQ Spice Model ----------
.SUBCKT DMN65D8LDWQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 2.175 
RS 30 3 0.001 
RG 20 2 79.9 
DESD1 2 5 DESD 
DESD2 3 5 DESD 
CGS 2 3 2.011E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5.9E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.595 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.58 U0 = 400 KAPPA = 4.069 
.MODEL DCGD D CJO = 1.646E-011 VJ = 0.1277 M = 0.4 
.MODEL DSUB D IS = 4.551E-009 N = 1.836 RS = 0.1357 CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 
.MODEL DLIM D IS = 0.0001 
.MODEL DESD D IS = 1.223E-008 N = 54.79 BV = 5.385 
.ENDS
*Diodes DMN65D8LDWQ Spice Model v1.0 Last Revised 2017/3/17


*---------- DMP6110SVTQ Spice Model ----------
.SUBCKT DMP6110SVTQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.04464 
RS 30 3 0.001 
RG 20 2 13 
CGS 2 3 1E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 6.5E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 
+ TOX = 6E-008 NSUB = 1E+016 KP = 10.4 KAPPA = 30.49 VTO = -2.063 
.MODEL DCGD D CJO = 1.881E-010 VJ = 0.6541 M = 0.3655 
.MODEL DSUB D IS = 2.224E-010 N = 1.277 RS = 0.01338 
+ BV = 50 CJO = 1.189E-010 VJ = 0.7738 M = 0.6069 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP6110SVTQ Spice Model v1.0 Last Revised 2015/12/03



*---------- DMTH6002LPS Spice Model ----------
.SUBCKT DMTH6002LPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.0001 
RS 30 3 0.001 
RG 20 2 0.68 
CGS 2 3 8E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 4.2E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.549 
+ TOX = 6E-008 NSUB = 1E+016 KP = 212 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 2.254E-009 VJ = 0.8 M = 0.6192 
.MODEL DSUB D IS = 2.249E-010 N = 1.121 RS = 0.0001411 BV = 68 CJO = 4.5E-009 VJ = 0.8 M = 0.6 TT = 3.1E-08
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH6002LPS Spice Model v1.0M Last Revised 2016/8/31


*---------- DMT68M8LSS Spice Model ----------
.SUBCKT DMT68M8LSS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.004537 
RS 30 3 0.001 
RG 20 2 1.68 
CGS 2 3 2.094E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 9E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.933 
+ TOX = 6E-008 NSUB = 1E+016 KP = 122.1 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 4.5E-010 VJ = 0.8 M = 0.7951 
.MODEL DSUB D IS = 1.193E-010 N = 1.123 RS = 0.004612 BV = 67 CJO = 1.2E-009 VJ = 0.8 M = 0.6 TT=9.6E-09
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT68M8LSS Spice Model v1.0 Last Revised 2017/5/8



*---------- DMJ70H601SK3 Spice Model ----------
.SUBCKT DMJ70H601SK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.3542 
RS 30 3 0.001 
RG 20 2 2.58 
CGS 2 3 6.72E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 8.8E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.659 
+ TOX = 6E-008 NSUB = 1E+016 KP = 1.351 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 7.15E-010 VJ = 0.6 M = 0.8 
.MODEL DSUB D IS = 2.288E-010 N = 1.299 RS = 0.007 BV = 775 CJO = 2.8E-009 VJ = 0.6 M = 0.8 TT=1.3E-07
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMJ70H601SK3 Spice Model v1.0 Last Revised 2017/4/11



*---------- DMJ70H601SV3 Spice Model ----------
.SUBCKT DMJ70H601SV3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.3542 
RS 30 3 0.001 
RG 20 2 2.58 
CGS 2 3 6.72E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 8.8E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.659 
+ TOX = 6E-008 NSUB = 1E+016 KP = 1.351 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 7.15E-010 VJ = 0.6 M = 0.8 
.MODEL DSUB D IS = 2.288E-010 N = 1.299 RS = 0.007 BV = 775 CJO = 2.8E-009 VJ = 0.6 M = 0.8 TT=1.3E-07
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMJ70H601SV3 Spice Model v1.0 Last Revised 2017/4/11



*---------- DMJ70H1D0SV3 Spice Model ----------
.SUBCKT DMJ70H1D0SV3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.6345 
RS 30 3 0.001 
RG 20 2 1.71 
CGS 2 3 4.113E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 6E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.825 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.8461 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 4.5E-010 VJ = 0.6 M = 0.8 
.MODEL DSUB D IS = 2.288E-010 N = 1.299 RS = 0.007 BV = 774 CJO = 2E-009 VJ = 0.7983 M = 0.8 TT = 1.08E-07 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMJ70H1D0SV3 Spice Model v1.0 Last Revised 2017/4/11


*---------- DMJ70H1D4SV3 Spice Model ----------
.SUBCKT DMJ70H1D4SV3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.9432 
RS 30 3 0.001 
RG 20 2 4.05 
CGS 2 3 3.369E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.8E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.622 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.9096 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 2.1E-010 VJ = 0.6 M = 0.8 
.MODEL DSUB D IS = 2.403E-010 N = 1.369 RS = 0.007559 BV = 795 CJO = 1.992E-009 VJ = 0.6 M = 0.8 TT = 8.8E-08 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMJ70H1D4SV3 Spice Model v1.0 Last Revised 2017/4/12



*---------- DMJ70H1D5SV3 Spice Model ----------
.SUBCKT DMJ70H1D5SV3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.7381 
RS 30 3 0.001 
RG 20 2 2.23 
CGS 2 3 3.093E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 4.9E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.558 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.3995 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 3.3E-010 VJ = 0.6 M = 0.8 
.MODEL DSUB D IS = 2.254E-010 N = 1.36 RS = 0.009297 BV = 792 CJO = 1.992E-009 VJ = 0.6 M = 0.8 TT = 9.5E-08 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMJ70H1D5SV3 Spice Model v1.0 Last Revised 2017/4/12


*---------- DMN1017UCP3 Spice Model ----------
.SUBCKT DMN1017UCP3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.009415 
RS 30 3 0.001 
RG 20 2 2.09 
CGS 2 3 6.485E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.65E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.976 
+ TOX = 6E-008 NSUB = 1E+016 KP = 128.9 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 8.273E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.373E-010 N = 1.103 RS = 0.02934 BV = 13 CJO = 2.31E-010 VJ = 0.7039 M = 0.6 TT = 6.5E-009 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN1017UCP3 Spice Model v1.0M Last Revised 2017/4/11


*---------- DMP45H4D9HJ3 Spice Model ----------
.SUBCKT DMP45H4D9HJ3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 3.071 
RS 30 3 0.001 
RG 20 2 280.6 
CGS 2 3 5.247E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 6E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.8385 KAPPA = 19.32 VTO = -4.541 
.MODEL DCGD D CJO = 4E-010 VJ = 0.6 M = 0.8 
.MODEL DSUB D IS = 2.777E-010 N = 1.379 RS = 4.441E-010 BV = 513 CJO = 9.289E-010 VJ = 0.6602 M = 0.7995 TT = 8.41E-008 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP45H4D9HJ3 Spice Model v1.0M Last Revised 2017/3/15



*---------- DMP45H4D9HK3 Spice Model ----------
.SUBCKT DMP45H4D9HK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 3.071 
RS 30 3 0.001 
RG 20 2 280.6 
CGS 2 3 5.247E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 6E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.8385 KAPPA = 19.32 VTO = -4.541 
.MODEL DCGD D CJO = 4E-010 VJ = 0.6 M = 0.8 
.MODEL DSUB D IS = 2.777E-010 N = 1.379 RS = 4.441E-010 BV = 513 CJO = 9.289E-010 VJ = 0.6602 M = 0.7995 TT = 8.41E-008 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP45H4D9HK3 Spice Model v1.0M Last Revised 2016/9/8



*---------- DMN95H2D2HCTI Spice Model ----------
.SUBCKT DMN95H2D2HCTI 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 1.542 
RS 30 3 0.001 
RG 20 2 4.86 
CGS 2 3 1.465E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 6E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 4.498 
+ TOX = 6E-008 NSUB = 1E+016 KP = 2.06 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.49E-012 VJ = 2.391 M = 0.12 
.MODEL DSUB D IS = 2.503E-010 N = 1.303 RS = 0.005901 BV = 1054 CJO = 2.001E-009 VJ = 0.1005 M = 0.5169 TT=3E-07
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN95H2D2HCTI Spice Model v1.0M Last Revised 2017/3/30



*---------- DMN95H8D5HCTI Spice Model ----------
.SUBCKT DMN95H8D5HCTI 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 4.884 
RS 30 3 0.001 
RG 20 2 1.16 
CGS 2 3 4.535E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 7E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 4.536 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.4727 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.213E-010 VJ = 0.6 M = 0.8 
.MODEL DSUB D IS = 3.813E-010 N = 1.399 RS = 0.01264 BV = 1050 CJO = 5.904E-010 VJ = 0.6 M = 0.7456 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN95H8D5HCTI Spice Model v1.0 Last Revised 2017/3/30



*---------- DMP22D4UDA Spice Model ----------
.SUBCKT DMP22D4UDA 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.6562 
RS 30 3 0.001 
RG 20 2 400 
CGS 2 3 2.653E-011 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 5.8E-011 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.6965 KAPPA = 32.11 VTO = -0.6305 
.MODEL DCGD D CJO = 1.549E-011 VJ = 0.1652 M = 0.3749 
.MODEL DSUB D IS = 3.478E-007 N = 2.097 RS = 3.705 BV = 25 CJO = 3.247E-012 VJ = 1.719E-014 M = 0.02141 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMP22D4UDA Spice Model v1.0 Last Revised 2012/11/30


*---------- DMC21D1UDA Spice Model ----------

*NMOS

.SUBCKT DMC21D1UDA_N 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.3366 
RS 30 3 0.001 
RG 20 2 216.8 
CGS 2 3 2.5E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 8E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8158 
+ TOX = 6E-008 NSUB = 1E+016 KP = 2.327 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1E-011 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 9.72E-010 N = 1.305 RS = 1.559 BV = 22 CJO = 5E-012 VJ = 0.6 M = 0.748  
.MODEL DLIM D IS = 0.0001 
.ENDS

*PMOS

.SUBCKT DMC21D1UDA_P 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.6562 
RS 30 3 0.001 
RG 20 2 400 
CGS 2 3 2.653E-011 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 5.8E-011 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.6965 KAPPA = 32.11 VTO = -0.6305 
.MODEL DCGD D CJO = 1.549E-011 VJ = 0.1652 M = 0.3749 
.MODEL DSUB D IS = 3.478E-007 N = 2.097 RS = 3.705 BV = 25 CJO = 3.247E-012 VJ = 1.719E-014 M = 0.02141 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMC21D1UDA Spice Model v1.0 Last Revised 2017/5/11


*---------- DMP22D4UFO Spice Model ----------
.SUBCKT DMP22D4UFO 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.6562 
RS 30 3 0.001 
RG 20 2 400 
CGS 2 3 2.653E-011 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 5.8E-011 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.6965 KAPPA = 32.11 VTO = -0.6305 
.MODEL DCGD D CJO = 1.549E-011 VJ = 0.1652 M = 0.3749 
.MODEL DSUB D IS = 3.478E-007 N = 2.097 RS = 3.705 BV = 25 CJO = 3.247E-012 VJ = 1.719E-014 M = 0.02141 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMP22D4UFO Spice Model v1.0 Last Revised 2012/11/30


*---------- DMN3009SFG Spice Model ----------
.SUBCKT DMN3009SFG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.002613 
RS 30 3 1E-008 
RG 20 2 2.2 
CGS 2 3 1.778E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.6E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 1.773 
+ TOX = 6E-008 NSUB = 1E+016 KP = 235.8 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 1.354E-009 VJ = 0.8372 M = 0.51 
.MODEL DSUB D IS = 2.529E-010 N = 1.173 RS = 0.001642 BV = 35.37 CJO = 2.225E-010 VJ = 0.1191 M = 0.564 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN3009SFG  Spice Model v1.0 Last Revised 2015/8/03


*---------- DMN90H8D5HCTI Spice Model ----------
.SUBCKT DMN90H8D5HCTI 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 4.884 
RS 30 3 0.001 
RG 20 2 1.16 
CGS 2 3 4.535E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 7E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 4.536 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.4727 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.213E-010 VJ = 0.6 M = 0.8 
.MODEL DSUB D IS = 3.813E-010 N = 1.399 RS = 0.01264 BV = 1050 CJO = 5.904E-010 VJ = 0.6 M = 0.7456 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN90H8D5HCTI Spice Model v1.0 Last Revised 2017/3/30



*---------- DMN21D1UDA Spice Model ----------
.SUBCKT DMN21D1UDA 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.3366 
RS 30 3 0.001 
RG 20 2 216.8 
CGS 2 3 2.5E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 8E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8158 
+ TOX = 6E-008 NSUB = 1E+016 KP = 2.327 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1E-011 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 9.72E-010 N = 1.305 RS = 1.559 BV = 22 CJO = 5E-012 VJ = 0.6 M = 0.748  
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN21D1UDA Spice Model v1.0M Last Revised 2016/11/29



*---------- DMTH43M8LK3 Spice Model ----------
.SUBCKT DMTH43M8LK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001508 
RS 30 3 0.0005 
RG 20 2 2.54 
CGS 2 3 2.691E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 9.5E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.6 
+ TOX = 6E-008 NSUB = 1E+016 KP = 120 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 5.505E-010 VJ = 0.8 M = 0.7773 
.MODEL DSUB D IS = 2.615E-010 N = 1.185 RS = 0.003471 BV = 45 CJO = 3E-009 VJ = 0.8 M = 0.6 TT=1.77E-08
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH43M8LK3 Spice Model v1.0 Last Revised 2017/4/18



*---------- DMN2990UFO Spice Model ----------
.SUBCKT DMN2990UFO 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.3366 
RS 30 3 0.001 
RG 20 2 216.8 
CGS 2 3 2.5E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 8E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8158 
+ TOX = 6E-008 NSUB = 1E+016 KP = 2.327 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1E-011 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 9.72E-010 N = 1.305 RS = 1.559 BV = 22 CJO = 5E-012 VJ = 0.6 M = 0.748  
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN2990UFO Spice Model v1.0M Last Revised 2016/11/29



*---------- DMTH8012LPSW Spice Model ----------
.SUBCKT DMTH8012LPSW 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01004 
RS 30 3 0.001 
RG 20 2 0.68 
CGS 2 3 2.141E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.05E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.24 
+ TOX = 6E-008 NSUB = 1E+016 KP = 128.7 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 2.73E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 1.193E-010 N = 1.123 RS = 0.004612 BV = 88 CJO = 1.2E-009 VJ = 0.8 M = 0.6 TT=1.5E-08
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH8012LPSW Spice Model v1.0 Last Revised 2017/6/9


*---------- DMP3048LSD Spice Model ----------
.SUBCKT DMP3048LSD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.03788 
RS 30 3 0.001 
RG 20 2 6.83 
CGS 2 3 1.301E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 9.5E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 29.14 KAPPA = 19.32 VTO = -0.9085 
.MODEL DCGD D CJO = 3E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 7.066E-009 N = 1.281 RS = 0.04157 BV = 32 CJO = 1.76E-010 VJ = 0.8 M = 0.6 TT = 5E-009 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP3048LSD Spice Model v1.0M Last Revised 2016/9/12



*---------- DMT10H005SCT Spice Model ----------
.SUBCKT DMT10H005SCT 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.002568 
RS 30 3 0.001 
RG 20 2 0.41 
CGS 2 3 8.598E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.6E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.346 
+ TOX = 6E-008 NSUB = 1E+016 KP = 244.5 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 9.719E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.45E-011 N = 1.089 RS = 0.0009224 BV = 107 CJO = 3.5E-009 VJ = 0.8 M = 0.6 TT=3.5E-08
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT10H005SCT Spice Model v1.0 Last Revised 2017/5/12



*TITLE=GZ23C5V6
*DATE=15/06/2017
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*VERSION=1


** Imported from: C:\Users\suppuluri\Desktop\GZ23C5V6.txt
.model GZ23C5V6  D(IS=.21f RS=0.35 CJO=14.5p M=0.37 VJ=0.7 N=1 IKF=18m ISR=.05n 
+ BV=5.5 IBV=100u TT=30n EG=1.09 TRS1=.1m)



*                (c)  2017 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL


*---------- DMN60H080DS Spice Model ----------
.SUBCKT DMN60H080DS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 69.4 
RS 30 3 0.001 
RG 20 2 21.25 
CGS 2 3 2.45E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.38E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.494 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.1069 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 8E-012 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.248E-010 N = 1.562 RS = 0.05025 BV = 672 CJO = 4E-011 VJ = 0.6755 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN60H080DS Spice Model v1.0 Last Revised 2017/4/20



*---------- DMN3008SCP10 Spice Model ----------
.SUBCKT DMN3008SCP10 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.004161 
RS 30 3 0.001 
RG 20 2 436.8 
CGS 2 3 1.44E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.6E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.229 
+ TOX = 6E-008 NSUB = 1E+016 KP = 141.2 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 2E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.255E-010 N = 1.24 RS = 0.003684 BV = 32 CJO = 4.715E-010 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN3008SCP10 Spice Model v1.0M Last Revised 2017/3/23


*---------- DMN6017SK3 Spice Model ----------
.SUBCKT DMN6017SK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01068 
RS 30 3 0.001 
RG 20 2 1.44 
CGS 2 3 2.598E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.5E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.01616 VTO = 1.936 
+ TOX = 6E-008 NSUB = 1E+016 KP = 180.7 U0 = 400 KAPPA = 1 
.MODEL DCGD D CJO = 8.856E-010 VJ = 0.6 M = 0.6 
.MODEL DSUB D IS = 4.323E-010 N = 1.209 RS = 0.002739 BV = 65 CJO = 1.445E-010 VJ = 0.6 M = 0.6 TT=8.3E-09
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN6017SK3 Spice Model v1.0 Last Revised 2017/6/21




*---------- DMN3009LFV Spice Model ----------
.SUBCKT DMN3009LFV 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.002613 
RS 30 3 1E-008 
RG 20 2 2.2 
CGS 2 3 1.778E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.6E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 1.773 
+ TOX = 6E-008 NSUB = 1E+016 KP = 235.8 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 1.354E-009 VJ = 0.8372 M = 0.51 
.MODEL DSUB D IS = 2.529E-010 N = 1.173 RS = 0.001642 BV = 35.37 CJO = 2.225E-010 VJ = 0.1191 M = 0.564 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN3009LFV  Spice Model v1.0 Last Revised 2015/8/03



*---------- DMT32M5LPS Spice Model ----------
.SUBCKT DMT32M5LPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 5.43E-006 
RS 30 3 0.001 
RG 20 2 0.71 
CGS 2 3 3.753E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.15E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 1 VTO = 1.7 TOX = 6E-008 KP = 299.5 
.MODEL DCGD D CJO = 1.805E-009 VJ = 0.8 M = 0.6038 
.MODEL DSUB D IS = 2.221E-010 N = 1.18 RS = 4.441E-010 BV = 38 CJO = 3E-009 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT32M5LPS Spice Model v1.0 Last Revised 2016/12/31


*SBRT6U20LP Spice Model v1.0 Last Revised 6/27/2017  Diodes Inc SUPER BARRIER RECTIFIER
 SIMULATOR=SPICE3
.MODEL DI_SBRT6U20LP D  ( IS=38.15u RS=10.89m BV=22.00 IBV=10.00
+ CJO=8.554n M=708.2m N=1.034 TT=1.627n EG=480.0m VJ=96.07m )

*                (c)  2017 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan


*---------- DMS3014SFG Spice Model ----------
.SUBCKT DMS3014SFG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.008927 
RS 30 3 0.001 
RG 20 2 1 
CGS 2 3 2.236E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.1E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.818 
+ TOX = 6E-008 NSUB = 1E+016 KP = 148.2 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 5E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 1.833E-007 N = 0.7719 RS = 0.04835 BV = 32 CJO = 5.024E-010 VJ = 0.6 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMS3014SFG Spice Model v1.0M Last Revised 2017/6/28


*SBR2U60S1F Spice Model v1.0 Last Revised 6/26/2017  Diodes Inc SUPER BARRIER RECTIFIER
 SIMULATOR=SPICE3
.MODEL DI_SBR2U60S1F D  ( IS=12.49u RS=58.29m BV=62.00 IBV=10.00
+ CJO=1.727n M=2.037 N=1.060 TT=1.82n EG=480.0m VJ=357.3m )

*                (c)  2017 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan


*---------- DMT34M1LPS Spice Model ----------
.SUBCKT DMT34M1LPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001128 
RS 30 3 0.001 
RG 20 2 0.94 
CGS 2 3 2.402E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.3E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.5 
+ TOX = 6E-008 NSUB = 1E+016 KP = 192.5 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 9.697E-010 VJ = 0.8 M = 0.6455 
.MODEL DSUB D IS = 7.376E-011 N = 1.098 RS = 0.00218 BV = 34 CJO = 1.8E-009 VJ = 0.8 M = 0.6 TT=1.1E-08
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT34M1LPS Spice Model v1.0 Last Revised 2017/6/6


*---------- DMT36M1LPS Spice Model ----------
.SUBCKT DMT36M1LPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001846 
RS 30 3 0.001 
RG 20 2 1.04 
CGS 2 3 1.248E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 8E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.961 
+ TOX = 6E-008 NSUB = 1E+016 KP = 69.31 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 4.861E-010 VJ = 0.8 M = 0.6541 
.MODEL DSUB D IS = 2.305E-010 N = 1.192 RS = 0.003032 BV = 30 CJO = 1.695E-009 VJ = 0.8 M = 0.6 TT=7E-09
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT36M1LPS Spice Model v1.0M Last Revised 2016/5/3



*---------- DMN3009SK3 Spice Model ----------
.SUBCKT DMN3009SK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.002613 
RS 30 3 1E-008 
RG 20 2 2.2 
CGS 2 3 1.778E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.6E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 1.773 
+ TOX = 6E-008 NSUB = 1E+016 KP = 235.8 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 1.354E-009 VJ = 0.8372 M = 0.51 
.MODEL DSUB D IS = 2.529E-010 N = 1.173 RS = 0.001642 BV = 35.37 CJO = 2.225E-010 VJ = 0.1191 M = 0.564 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN3009SK3  Spice Model v1.0 Last Revised 2015/8/03



*---------- DMP2010UFV Spice Model ----------
.SUBCKT DMP2010UFV 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.004509 
RS 30 3 0.001 
RG 20 2 10.72 
CGS 2 3 3.102E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 6.3E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 192.6 KAPPA = 19.32 VTO = -1.259 
.MODEL DCGD D CJO = 3E-009 VJ = 0.2228 M = 0.4828 
.MODEL DSUB D IS = 2.281E-009 N = 1.168 RS = 0.007325 BV = 25 CJO = 1E-009 VJ = 0.1694 M = 0.6632 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP2010UFV Spice Model v1.0 Last Revised 2015/7/31



*---------- DMP1009UFDF Spice Model ----------
.SUBCKT DMP1009UFDF 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.004634 
RS 30 3 0.001 
RG 20 2 10.24 
CGS 2 3 1.427E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 3E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 112 KAPPA = 19.32 VTO = -0.9739 
.MODEL DCGD D CJO = 2.402E-009 VJ = 0.6 M = 0.6079 
.MODEL DSUB D IS = 2.361E-008 N = 1.199 RS = 0.01507 BV = 17 CJO = 4.956E-010 VJ = 0.6543 M = 0.6627 TT = 1.7E-008 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP1009UFDF Spice Model v1.0M Last Revised 2017/5/10



*---------- DMP1005UFDF Spice Model ----------
.SUBCKT DMP1005UFDF 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.003444 
RS 30 3 0.001 
RG 20 2 19.5 
CGS 2 3 2.289E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 2.9E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 177.3 KAPPA = 19.32 VTO = -0.724 
.MODEL DCGD D CJO = 2.303E-009 VJ = 0.6 M = 0.6 
.MODEL DSUB D IS = 8.27E-007 N = 1.204 RS = 0.01592 BV = 16 CJO = 8.775E-010 VJ = 0.6 M = 0.6 TT = 5.7E-008 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP1005UFDF Spice Model v1.0M Last Revised 2017/5/10



*---------- DMN1004UFDF Spice Model ----------
.SUBCKT DMN1004UFDF 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001015 
RS 30 3 0.001 
RG 20 2 2.2 
CGS 2 3 1.851E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.2E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8155 
+ TOX = 6E-008 NSUB = 1E+016 KP = 494.3 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.933E-009 VJ = 0.7844 M = 0.6 
.MODEL DSUB D IS = 1.631E-008 N = 1.136 RS = 0.007419 BV = 14 CJO = 5.543E-010 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN1004UFDF Spice Model v1.0M Last Revised 2016/5/26



*---------- DMT6018LDR Spice Model ----------
.SUBCKT DMT6018LDR 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.009389 
RS 30 3 0.001 
RG 20 2 1.11 
CGS 2 3 9.122E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 4.2E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.613 
+ TOX = 6E-008 NSUB = 1E+016 KP = 55.32 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 8E-011 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.369E-010 N = 1.263 RS = 0.00377 BV = 67 CJO = 5.5E-010 VJ = 0.8 M = 0.6 TT=1.02E-08
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT6018LDR Spice Model v1.0 Last Revised 2017/7/6


*---------- DMN1006UCA6 Spice Model ----------
.SUBCKT DMN1006UCA6 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001045 
RS 30 3 0.001 
RG 20 2 485.6 
CGS 2 3 1.95E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5.1E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9751 
+ TOX = 6E-008 NSUB = 1E+016 KP = 615.2 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 7E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 5.115E-009 N = 1.172 RS = 0.003108 BV = 14 CJO = 6E-010 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN1006UCA6 Spice Model v1.0 Last Revised 2017/6/26


*---------- DMN1003UCA6 Spice Model ----------
.SUBCKT DMN1003UCA6 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.0001516 
RS 30 3 0.001 
RG 20 2 2 
CGS 2 3 2.9E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 8.8E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9351 
+ TOX = 6E-008 NSUB = 1E+016 KP = 2145 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 7E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.75E-009 N = 1.084 RS = 4.441E-010 BV = 15 CJO = 8.348E-010 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN1003UCA6 Spice Model v1.0 Last Revised 2017/6/28



*SBRT15U50SP5 Spice Model v1.0 Last Revised 7/12/2017  Diodes Inc TRENCH SUPER BARRIER RECTIFIER
*SIMULATOR=SPICE3

.MODEL DI_SBRT15U50SP5 D  ( IS=74.23u RS=5.775m BV=54.00 IBV=10.00
+ CJO=14.41n M=489.9m N=1.023 TT=49.80n EG=480.0m VJ=20.30m )

*                (c)  2017 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan


*---------- DMN1053UCP4 Spice Model ----------
.SUBCKT DMN1053UCP4 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.02848 
RS 30 3 0.007857 
RG 20 2 1.16 
CGS 2 3 5.054E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 9.75E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8E+005  ETA = 0.001  VTO = 0.8543 
+ TOX = 6E-008  NSUB = 1E+016  KP = 113.6  U0 = 400  KAPPA = 1 
.MODEL DCGD D  CJO = 4.172E-010  VJ = 0.6  M = 0.6531 
.MODEL DSUB D  IS = 1.997E-008  N = 1.295  RS = 0.1266  BV = 15  CJO = 1.714E-012  VJ = 0.6607  M = 0.6958 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN1053UCP4 Spice Model v1.0 Last Revised 2016/7/25


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=14/07/2017
*VERSION=1


.SUBCKT BZT585B2V4T 1 2 
D1 1 2 DF
D2 2 1 DR
D3 1 2 DR2
.model DF D(IS=.000015n RS=0.32 CJO=200p M=0.5 VJ=0.4 N=1.1 IKF=120m TT=40n EG=1.13 TRS1=.2m) 
.model DR D(IS=.6n RS=58 N=3.3 IKF=.7u T_ABS=25)
.model DR2 D(BV=2.378 IBV=100p RS=6 NBV=1.2 IBVL=10p TBV1=-1.72m N=100)
.ENDS
*         (c)  2017 Diodes Inc
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*




*---------- DMTH43M8LK3Q Spice Model ----------
.SUBCKT DMTH43M8LK3Q 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001508 
RS 30 3 0.0005 
RG 20 2 2.54 
CGS 2 3 2.691E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 9.5E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.6 
+ TOX = 6E-008 NSUB = 1E+016 KP = 120 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 5.505E-010 VJ = 0.8 M = 0.7773 
.MODEL DSUB D IS = 2.615E-010 N = 1.185 RS = 0.003471 BV = 45 CJO = 3E-009 VJ = 0.8 M = 0.6 TT=1.77E-08
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH43M8LK3Q Spice Model v1.0 Last Revised 2017/4/18



*---------- DMP6185SEQ Spice Model ----------
.SUBCKT DMP6185SEQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.03231 
RS 30 3 0.001 
RG 20 2 16.84 
CGS 2 3 7.103E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 6.5E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 30.52 KAPPA = 19.32 VTO = -0.9885 
.MODEL DCGD D CJO = 2.071E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 1.567E-009 N = 1.266 RS = 0.05804 BV = 25 CJO = 3.071E-011 VJ = 0.8 M = 0.6 TT=1.1E-08
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP6185SEQ Spice Model v1.0M Last Revised 2017/6/26



*---------- DMP2021UTS Spice Model ----------
.SUBCKT DMP2021UTS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.006917 
RS 30 3 0.001 
RG 20 2 12.02 
CGS 2 3 2.686E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 3.8E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 91.34 KAPPA = 19.32 VTO = -0.7199 
.MODEL DCGD D CJO = 1.478E-009 VJ = 0.6094 M = 0.6 
.MODEL DSUB D IS = 2.978E-008 N = 1.118 RS = 0.03405 BV = 20 CJO = 3.453E-010 VJ = 0.6 M = 0.6726 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP2021UTS Spice Model v1.0 Last Revised 2015/8/18



*---------- DMN3020UTS Spice Model ----------
.SUBCKT DMN3020UTS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01197 
RS 30 3 0.001 
RG 20 2 1.27 
CGS 2 3 1.239E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.85E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9495 
+ TOX = 6E-008 NSUB = 1E+016 KP = 109.4 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 5.31E-010 VJ = 0.6 M = 0.6 
.MODEL DSUB D IS = 1.004E-008 N = 1.226 RS = 0.01837 BV = 35.5 CJO = 2.226E-010 VJ = 0.7186 M = 0.6022 TT = 3.5E-009 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN3020UTS Spice Model v1.0M Last Revised 2016/7/19



*---------- DMN2011UTS Spice Model ----------
.SUBCKT DMN2011UTS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.0032 
RS 30 3 0.001 
RG 20 2 1.49 
CGS 2 3 1.99E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 3.25E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.95 
+ TOX = 6E-008 NSUB = 1E+016 KP = 184 U0 = 400 KAPPA = 80 
.MODEL DCGD D CJO = 1.288E-009 VJ = 0.6701 M = 0.6 
.MODEL DSUB D IS = 3.806E-009 N = 1.128 RS = 0.007 
+ BV = 30 CJO = 1.91E-010 VJ = 1E-015 M = 0.03576 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN2011UTS Spice Model v1.0 Last Revised 2014/9/11



*---------- DMN2015UFDF Spice Model ----------
.SUBCKT DMN2015UFDF 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.005835 
RS 30 3 0.001 
RG 20 2 1.34 
CGS 2 3 1.233E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.6E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.036 
+ TOX = 6E-008 NSUB = 1E+016 KP = 237.4 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.251E-009 VJ = 0.6 M = 0.6285 
.MODEL DSUB D IS = 1.124E-009 N = 1.134 RS = 0.007534 BV = 25 CJO = 2.22E-010 VJ = 0.6 M = 0.6283 TT=5.78E-09
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN2015UFDF Spice Model v1.0M Last Revised 2016/9/5


*---------- DMT35M7LFV Spice Model ----------
.SUBCKT DMT35M7LFV 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001532 
RS 30 3 0.001 
RG 20 2 0.94 
CGS 2 3 1.419E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.65E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.591 
+ TOX = 6E-008 NSUB = 1E+016 KP = 129.9 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.2E-009 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 1.939E-011 N = 1.109 RS = 0.001352 BV = 34 CJO = 1E-009 VJ = 0.8 M = 0.6 TT=8E-09
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT35M7LFV Spice Model v1.0 Last Revised 2017/7/27


*---------- DMT3006LFV Spice Model ----------
.SUBCKT DMT3006LFV 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001846 
RS 30 3 0.001 
RG 20 2 1.04 
CGS 2 3 1.248E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 8E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.961 
+ TOX = 6E-008 NSUB = 1E+016 KP = 69.31 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 4.861E-010 VJ = 0.8 M = 0.6541 
.MODEL DSUB D IS = 2.305E-010 N = 1.192 RS = 0.003032 BV = 30 CJO = 1.695E-009 VJ = 0.8 M = 0.6 TT=7E-09
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT3006LFV Spice Model v1.0M Last Revised 2016/5/3



*---------- DMN61D9UWQ Spice Model ----------
.SUBCKT DMN61D9UWQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 1.449 
RS 30 3 0.001 
RG 20 2 127 
DESD1 2 5 DESD 
DESD2 3 5 DESD 
CGS 2 3 2.688E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.189 TOX = 6E-008 NSUB = 1E+016 KP = 1.163 U0 = 400 KAPPA = 14.08 
.MODEL DCGD D CJO = 1.808E-011 VJ = 0.134 M = 0.369 
.MODEL DSUB D IS = 247.6E-9 N = 1.566 RS = 0.358 EG = 0.06341 XTI = 8.194 
+ TNOM = 217.5 BV = 70 CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 
.MODEL DLIM D IS = 0.0001 
.MODEL DESD D IS = 2.728E-008 N = 66.22 BV = 5.068 
.ENDs
*Diodes DMN61D9UWQ Spice Model v1.0 Last Revised 2017/7/20



*---------- DMN2065UWQ Spice Model ----------
.SUBCKT DMN2065UWQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01692 
RS 30 3 0.001 
RG 20 2 2.59 
CGS 2 3 3.316E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 7.8E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.001 VTO = 0.8496 
+ TOX = 6E-008 NSUB = 1E+016 KP = 33.27 U0 = 400 KAPPA = 10
.MODEL DCGD D CJO = 3.676E-010 VJ = 0.6 M = 0.6002 
.MODEL DSUB D IS = 1.559E-008 N = 1.278 RS = 0.07423 BV = 23 CJO = 3.241E-012 VJ = 0.6 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN2065UWQ Spice Model v1.0 Last Revised 2017/6/6



*---------- DMN7022LFGQ Spice Model ----------
.SUBCKT DMN7022LFGQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01229 
RS 30 3 0.001 
RG 20 2 0.89 
CGS 2 3 2.958E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.2E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.283 
+ TOX = 6E-008 NSUB = 1E+016 KP = 108.2 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 9.098E-010 VJ = 0.6685 M = 0.6 
.MODEL DSUB D IS = 2.356E-010 N = 1.236 RS = 0.001642 BV = 84 CJO = 4.014E-010 VJ = 0.6 M = 0.6031 TT=1.3E-08 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN7022LFGQ Spice Model v1.0M Last Revised 2017/8/4



*---------- DMN13M9UCA6 Spice Model ----------
.SUBCKT DMN13M9UCA6 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.0001516 
RS 30 3 0.001 
RG 20 2 2 
CGS 2 3 2.9E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 8.8E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9351 
+ TOX = 6E-008 NSUB = 1E+016 KP = 2145 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 7E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.75E-009 N = 1.084 RS = 4.441E-010 BV = 15 CJO = 8.348E-010 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN13M9UCA6 Spice Model v1.0 Last Revised 2017/7/13



*---------- DMN16M9UCA6 Spice Model ----------
.SUBCKT DMN16M9UCA6 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001045 
RS 30 3 0.001 
RG 20 2 485.6 
CGS 2 3 1.95E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5.1E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9751 
+ TOX = 6E-008 NSUB = 1E+016 KP = 615.2 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 7E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 5.115E-009 N = 1.172 RS = 0.003108 BV = 14 CJO = 6E-010 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN16M9UCA6 Spice Model v1.0 Last Revised 2017/7/13


*---------- DMN3012LFG Spice Model ----------

*High Side Q1

.SUBCKT DMN3012LFG_high 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001098 
RS 30 3 0.001 
RG 20 2 1.63 
CGS 2 3 6.425E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.6E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.623 
+ TOX = 6E-008 NSUB = 1E+016 KP = 37.72 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.038E-010 VJ = 0.8 M = 0.7803 
.MODEL DSUB D IS = 2.719E-010 N = 1.316 RS = 0.0001616 BV = 31 CJO = 8E-010 VJ = 0.8 M = 0.6 TT = 1.22E-008 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Low Side Q2

.SUBCKT DMN3012LFG_low 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001219 
RS 30 3 0.001 
RG 20 2 1.63 
CGS 2 3 1.13E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 9E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.064 
+ TOX = 6E-008 NSUB = 1E+016 KP = 87.26 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 2E-010 VJ = 0.8 M = 0.792 
.MODEL DSUB D IS = 6.518E-010 N = 1.184 RS = 0.003091 BV = 31 CJO = 1.6E-009 VJ = 0.8 M = 0.6 TT = 1.5E-008 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMN3012LFG Spice Model v1.0M Last Revised 2017/8/1



*---------- DMC2700UDMQ Spice Model ----------

*NMOS

.SUBCKT DMC2700UDMQ_N 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.2097 
RS 30 3 0.001 
RG 20 2 155.2 
CGS 2 3 5E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 9E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8699 
 +TOX = 6E-008 NSUB = 1E+016 KP = 5.296 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 2.5E-011 VJ = 0.6 M = 0.7342 
.MODEL DSUB D IS = 8.403E-009 N = 1.531 RS = 0.4153 BV = 26 CJO = 3.241E-012 VJ = 0.6 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS

*PMOS

.SUBCKT DMC2700UDMQ_P 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.309 
RS 30 3 0.001 
RG 20 2 168.8
CGS 2 3 5.175E-011 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 7E-011 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 1.529 KAPPA = 19.32 VTO = -0.8736 
.MODEL DCGD D CJO = 2.322E-011 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 1.357E-008 N = 1.581 RS = 0.8199 BV = 25 CJO = 1.5E-011 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMN2700UDMQ Spice Model v1.0 Last Revised 2017/8/9


*---------- DMN63D1LT Spice Model ----------
.SUBCKT DMN63D1LT 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 1.631 
RS 30 3 0.001 
RG 20 2 133 
CGS 2 3 2.711E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 2.628E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0  VTO = 1.596 
+ TOX = 6E-008  NSUB = 1.945E+017  KP = 1.196  KAPPA = 1E-015  U0 = 400  THETA = 5.648E-007 
.MODEL DCGD D  CJO = 2.628E-011  VJ = 0.6  M = 0.2561 
.MODEL DSUB D  IS = 2.05E-009  N = 1.698  RS = 0.1282  BV = 65  CJO = 6.226E-012  VJ = 1  M = 0.6474 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN63D1LT Spice Model v1.0 Last Revised 2015/8/28



*---------- DMN63D1LV Spice Model ----------
.SUBCKT DMN63D1LV 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 1.631 
RS 30 3 0.001 
RG 20 2 133 
CGS 2 3 2.711E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 2.628E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0  VTO = 1.596 
+ TOX = 6E-008  NSUB = 1.945E+017  KP = 1.196  KAPPA = 1E-015  U0 = 400  THETA = 5.648E-007 
.MODEL DCGD D  CJO = 2.628E-011  VJ = 0.6  M = 0.2561 
.MODEL DSUB D  IS = 2.05E-009  N = 1.698  RS = 0.1282  BV = 65  CJO = 6.226E-012  VJ = 1  M = 0.6474 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN63D1LV Spice Model v1.0 Last Revised 2015/8/28



*---------- DMG1012UW Spice Model ----------
.SUBCKT DMG1012UW 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.1379 
RS 30 3 0.001 
RG 20 2 173.69 
CGS 2 3 5E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 9E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9495 
+ TOX = 6E-008 NSUB = 1E+016 KP = 5.129 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 2.8E-011 VJ = 0.6 M = 0.7528 
.MODEL DSUB D IS = 2.319E-010 N = 1.641 RS = 0.1327 BV = 26 CJO = 2E-011 VJ = 0.7125 M = 0.6  
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMG1012UW Spice Model v1.0M Last Revised 2017/8/22


*---------- DMN2080UCB4 Spice Model ----------
.SUBCKT DMN2080UCB4 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.03895 
RS 30 3 0.001 
RG 20 2 923.5 
CGS 2 3 5.087E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.03E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9628 
+ TOX = 6E-008 NSUB = 1E+016 KP = 58.7 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 2.094E-010 VJ = 0.6 M = 0.6337 
.MODEL DSUB D IS = 2.479E-010 N = 1.126 RS = 0.09698 BV = 21 CJO = 8E-011 VJ = 0.7125 M = 0.6 TT = 2.5E-007 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN2080UCB4 Spice Model v1.0M Last Revised 2017/8/15


*---------- DMS3014SFGQ Spice Model ----------
.SUBCKT DMS3014SFGQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.008927 
RS 30 3 0.001 
RG 20 2 1 
CGS 2 3 2.236E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.1E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.818 
+ TOX = 6E-008 NSUB = 1E+016 KP = 148.2 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 5E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 1.833E-007 N = 0.7719 RS = 0.04835 BV = 32 CJO = 5.024E-010 VJ = 0.6 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMS3014SFGQ Spice Model v1.0M Last Revised 2017/9/15


*---------- DMT34M2LPS Spice Model ----------
.SUBCKT DMT34M2LPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001128 
RS 30 3 0.001 
RG 20 2 0.94 
CGS 2 3 2.402E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.3E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.5 
+ TOX = 6E-008 NSUB = 1E+016 KP = 192.5 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 9.697E-010 VJ = 0.8 M = 0.6455 
.MODEL DSUB D IS = 7.376E-011 N = 1.098 RS = 0.00218 BV = 34 CJO = 1.8E-009 VJ = 0.8 M = 0.6 TT=1.1E-08
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT34M2LPS Spice Model v1.0 Last Revised 2017/6/6


*---------- DMP3028LPSQ Spice Model ----------
.SUBCKT DMP3028LPSQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01205 
RS 30 3 0.001 
RG 20 2 14.8 
CGS 2 3 1.141E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 8E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 1E-009 
+ TOX = 6E-008 NSUB = 1E+016 KP = 24.29 KAPPA = 55.87 VTO = -2.147 
.MODEL DCGD D CJO = 4.573E-010 VJ = 0.4119 M = 0.3922 
.MODEL DSUB D IS = 2.24E-010 N = 1.262 RS = 0.009108 
+ BV = 50 CJO = 2.261E-010 VJ = 0.5048 M = 0.5435 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP3028LPSQ Spice Model v1.0 Last Revised 2017/10/13



* SPICE 3 Model for  D58V0M4U8MR_model 4 Channel SO-8
*****************************************************************************
* (C) Copyright 2017 Diodes Incorporated. All rights reserved.                                            
*****************************************************************************
** This model is designed as an aid not an accurate physical model
** DIODES  make no warranties with this model
**  The model is provided solely on an "as is" basis.  
** The entire risk as to its quality and performance is with the customer.
*****************************************************************************
*
* This model is subject to change without notice. 
* Diodes is not responsible that this model is actual or to give notice about changes
*****************************************************************************
*
* Updates:
*
* Version 1.0  
*
*****************************************************************************
* Package : SO-8
*â€Provides ESD Protection per IEC 61000-4-2 Standard: Air â€Â±30kV, Contact â€Â±30kV
*â€1 Channel of ESD Protection
*â€Low Channel Input Capacitance
*â€Typically Used in Powever Over Ethernet PSE Equipment against Line Overvoltges
*****************************************************************************
.SUBCKT D58V0M4U8MR_model 1 2 3 4 5 6 7 8

* Pinout:
*Pin 1 = PS1
*Pin 2 = GND
*Pin 3 = GND
*Pin 4 = PS2
*Pin 5 = PS3
*Pin 6 = GND
*Pin 7 = GND
*Pin 8 = PS4

D1 1 2 ZDiode
D2 4 2 ZDiode
D3 5 2 ZDiode
D4 8 2 ZDiode
R1 2 3 .01m
R2 2 6 .01m
R3 2 7 .01m

.MODEL ZDiode d
+IS=1e-13 RS=0.169 N=0.957115 EG=1.3
+XTI=4 BV=68.22 IBV=0.00025 CJO=368.2e-12
+VJ=0.980233 M=0.39895 FC=0.5 TT=1e-09


*---------- DMN1008UFDF Spice Model ----------
.SUBCKT DMN1008UFDF 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.003143 
RS 30 3 0.001 
RG 20 2 1.45 
CGS 2 3 7.277E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.3E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7348 
+ TOX = 6E-008 NSUB = 1E+016 KP = 114.4 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.145E-009 VJ = 0.8 M = 0.6716 
.MODEL DSUB D IS = 1.104E-007 N = 1.389 RS = 0.01258 BV = 19 CJO = 2.22E-010 VJ = 0.6 M = 0.6283 TT = 7.62E-009 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN1008UFDF Spice Model v1.0M Last Revised 2016/9/5


*---------- DMN67D7L Spice Model ----------
.SUBCKT DMN67D7L 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.9475 
RS 30 3 0.001 
RG 20 2 104.4 
CGS 2 3 1.8E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 4.1E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.632 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.4338 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.224E-011 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 6.28E-008 N = 2.068 RS = 0.107 BV = 78 CJO = 1E-011 VJ = 0.6 M = 0.7932 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN67D7L Spice Model v1.0 Last Revised 2017/10/23


*---------- DMN1002UCA6 Spice Model ----------
.SUBCKT DMN1002UCA6 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 1.211E-005 
RS 30 3 0.001 
RG 20 2 501.3 
CGS 2 3 2.932E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 8.8E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.141 
+ TOX = 6E-008 NSUB = 1E+016 KP = 1881 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 5.649E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.658E-010 N = 1.089 RS = 4.441E-010 BV = 16 CJO = 8.348E-010 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN1002UCA6 Spice Model v1.0 Last Revised 2017/10/18



*---------- DMP3056LSDQ Spice Model ----------
.SUBCKT DMP3056LSDQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.02496 
RS 30 3 0.001 
RG 20 2 11.1 
CGS 2 3 8.938E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 8.92E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 2.425E+005 KP = 27.53 ETA = 0.0001 TOX = 6E-008 NSUB = 1E+017 KAPPA = 2.932 VTO = -1.9 
.MODEL DCGD D CJO = 4.013E-010 VJ = 0.3844 M = 0.3457 
.MODEL DSUB D IS = 2.245E-010 N = 1.343 RS = 0.01819 BV = 35 CJO = 7.964E-011 VJ = 3.068 M = 0.9583 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMC3056LSDQ Spice Model v2.0 Last Revised 2017/3/1


*---------- DMN4020LFDE Spice Model ----------
.SUBCKT DMN4020LFDE 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.007676 
RS 30 3 0.001 
RG 20 2 1.5 
CGS 2 3 1.176E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 8E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.129 
+ TOX = 6E-008 NSUB = 1E+016 KP = 40 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 2.925E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.232E-010 N = 1.234 RS = 0.004374 BV = 48 CJO = 2.224E-010 VJ = 0.7963 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN4020LFDE Spice Model v1.0 Last Revised 2015/6/17




*---------- DMT3009LFVW Spice Model ----------
.SUBCKT DMT3009LFVW 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.002503 
RS 30 3 0.001 
RG 20 2 1.04 
CGS 2 3 7.039E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5.5E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.879 
+ TOX = 6E-008 NSUB = 1E+016 KP = 40.58 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 3.446E-010 VJ = 0.8 M = 0.7188 
.MODEL DSUB D IS = 2.773E-010 N = 1.21 RS = 0.005245 BV = 30 CJO = 1.695E-009 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT3009LFVW Spice Model v1.0 Last Revised 2017/7/27



*---------- DMP3125L Spice Model ----------
.SUBCKT DMP3125L 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.04242 
RS 30 3 0.001 
RG 20 2 53.6 
CGS 2 3 2.497E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 3.8E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 4.757 KAPPA = 19.32 VTO = -1.65 
.MODEL DCGD D CJO = 5.012E-011 VJ = 0.6 M = 0.6 
.MODEL DSUB D IS = 1.656E-009 N = 1.475 RS = 0.01802 BV = 37 CJO = 4.932E-011 VJ = 0.6 M = 0.6 TT = 4.8E-009 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP3125L Spice Model v1.0M Last Revised 2017/10/11


*---------- DMP1045UQ Spice Model ----------
.SUBCKT DMP1045UQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.0186 
RS 30 3 0.001 
RG 20 2 14.08 
CGS 2 3 1.211E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1.55E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 42.87 KAPPA = 19.32 VTO = -0.7925 
.MODEL DCGD D CJO = 9E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 1.937E-008 N = 1.239 RS = 0.07874 BV = 16 CJO = 8E-010 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP1045UQ Spice Model v1.0M Last Revised 2017/11/17


*---------- DMN2036UCB4 Spice Model ----------
.SUBCKT DMN2036UCB4 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.02713 
RS 30 3 0.001 
RG 20 2 361.7 
CGS 2 3 1.154E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.55E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.264 
+ TOX = 6E-008 NSUB = 1E+016 KP = 122.2 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 2.762E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.222E-010 N = 1.133 RS = 0.09706 BV = 27 CJO = 6E-011 VJ = 0.8 M = 0.6 TT = 3.5E-009 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN2036UCB4 Spice Model v1.0M Last Revised 2017/10/24


*---------- DMT10H025SSS Spice Model ----------
.SUBCKT DMT10H025SSS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.00752 
RS 30 3 0.001 
RG 20 2 6.22 
CGS 2 3 1.533E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 3.6E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.5 
+ TOX = 6E-008 NSUB = 1E+016 KP = 14.04 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 3.499E-010 VJ = 0.8 M = 0.6956 
.MODEL DSUB D IS = 2.335E-010 N = 1.273 RS = 0.001925 BV = 110 CJO = 4.489E-010 VJ = 0.8 M = 0.6 TT = 1.8E-008 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT10H025SSS Spice Model v1.0 Last Revised 2017/10/16



*---------- DMP45H150DHE Spice Model ----------
.SUBCKT DMP45H150DHE 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 39.3 
RS 30 3 0.001 
RG 20 2 51.5 
CGS 2 3 5.872E-011 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1.1E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.2487 KAPPA = 19.32 VTO = -3.203 
.MODEL DCGD D CJO = 2.067E-011 VJ = 0.6 M = 0.8 
.MODEL DSUB D IS = 2.977E-010 N = 1.498 RS = 0.04929 BV = 527 CJO = 8.446E-011 VJ = 0.6352 M = 0.6 TT = 5.4E-008 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP45H150DHE Spice Model v1.0M Last Revised 2017/7/13



*---------- DMP45H21DHE Spice Model ----------
.SUBCKT DMP45H21DHE 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 10.09 
RS 30 3 0.001 
RG 20 2 611.5 
CGS 2 3 1E-09 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.1236 KAPPA = 19.32 VTO = -4.317 
.MODEL DCGD D CJO = 4.992E-011 VJ = 0.6 M = 0.8 
.MODEL DSUB D IS = 3.303E-010 N = 1.458 RS = 0.01541 BV = 650 CJO = 2.508E-010 VJ = 0.6494 M = 0.6559 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP45H21DHE Spice Model v1.0 Last Revised 2015/9/23


*SRC=GBU1010;DI_GBU1010;Diodes;Si;  1000V  10.0A  3.00us   Diodes Inc.
Bridge Rectifier -- Per Element
.MODEL DI_GBU1010 D  ( IS=1.71f RS=7.00m BV=1000 IBV=5.00u
+ CJO=133p  M=0.333 N=0.900 TT=4.32u )
.ENDS*


*---------- DMP3099L Spice Model ----------
.SUBCKT DMP3099L 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.02942 
RS 30 3 0.001 
RG 20 2 10.27 
CGS 2 3 5.366E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 4.4E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 TOX = 6E-008 NSUB = 1E+016 KP = 8.769 KAPPA = 19.32 VTO = -1.917 
.MODEL DCGD D CJO = 2.502E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 4.949E-009 N = 1.628 RS = 0.02235 BV = 33 CJO = 5.295E-011 VJ = 0.8 M = 0.6  
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP3099L Spice Model v1.0M Last Revised 2017/12/7


*---------- DMP2200UFCL Spice Model ----------
.SUBCKT DMP2200UFCL 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.1222 
RS 30 3 0.001 
RG 20 2 65 
CGS 2 3 1.384E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 2.6E-010 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1E+006  ETA = 0.001 
+ TOX = 6E-008  NSUB = 1E+016  KP = 4.902  KAPPA = 49.86  VTO = -0.8622 
.MODEL DCGD D  CJO = 1.261E-010  VJ = 0.4  M = 0.4131 
.MODEL DSUB D  IS = 1.448E-009  N = 1.239  RS = 0.437  BV = 30  CJO = 1E-012  VJ = 0.2  M = 0.7859 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMP2200UFCL Spice Model v1.0 Last Revised 2015/5/6



*

*DIODES_INC_SPICE_MODEL

*ORIGIN=DZSL_DPG_IM

*SIMULATOR=SIMETRIX
*DATE=15-Dec-2017

*VERSION=1

*


.MODEL DSS4320T NPN IS=2.8E-13 NF=1 BF=390 IKF=9 NK=0.73 VAF=67
+ ISE=7E-14 NE =1.4 NR =1 BR =36 IKR=1.7 VAR=14 ISC=4e-13 NC=1.4 RB=0.15
+ RE =.008 RC =.006 RCO=0.29 GAMMA=1.1E-9 CJC=47E-12 MJC=0.33 VJC=0.49
+ CJE=196E-12 MJE=0.34 VJE=0.68 TF=0.7E-9 TR=20e-9 XTB=1.4 TRE1=.005
+ TRB1=.005 TRC1=.005 QUASIMOD=1

*                (c)  2017 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*

*DIODES_INC_SPICE_MODEL

*ORIGIN=DZSL_DPG_IM

*SIMULATOR=SIMETRIX
*DATE=15-Dec-2017

*VERSION=1

*


.MODEL DSS20201L NPN IS=2.8E-13 NF=1 BF=390 IKF=9 NK=0.73 VAF=67
+ ISE=7E-14 NE =1.4 NR =1 BR =36 IKR=1.7 VAR=14 ISC=4e-13 NC=1.4 RB=0.15
+ RE =.008 RC =.006 RCO=0.29 GAMMA=1.1E-9 CJC=47E-12 MJC=0.33 VJC=0.49
+ CJE=196E-12 MJE=0.34 VJE=0.68 TF=0.7E-9 TR=20e-9 XTB=1.4 TRE1=.005
+ TRB1=.005 TRC1=.005 QUASIMOD=1

*                (c)  2017 Diodes Inc
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*---------- DM3018SFV Spice Model ----------
.SUBCKT DMP3018SFV 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.005131 
RS 30 3 0.001 
RG 20 2 14.2 
CGS 2 3 1.876E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 2.5E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 42.07 KAPPA = 19.32 VTO = -2.783 
.MODEL DCGD D CJO = 1.4E-009 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.674E-010 N = 1.26 RS = 0.0008951 BV = 33 CJO = 8E-010 VJ = 0.6358 M = 0.6 TT = 1.07E-008 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP3018SFV Spice Model v1.0M Last Revised 2017/11/27


*---------- DMN2450UFD Spice Model ----------
.SUBCKT DMN2450UFD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.2738 
RS 30 3 0.001 
RG 20 2 85.4 
CGS 2 3 9E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.01616 VTO = 0.9919 
+TOX = 6E-008 NSUB = 1E+016 KP = 5.914 U0 = 400 KAPPA = 1 
.MODEL DCGD D CJO = 8E-011 VJ = 0.6 M = 0.7362 
.MODEL DSUB D IS = 1.244E-009 N = 1.349 RS = 0.6867 BV = 24 CJO = 1.445E-010 VJ = 0.6 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN2450UFD Spice Model v1.0 Last Revised 2017/12/18



*---------- DMP21D6UFD Spice Model ----------
.SUBCKT DMP21D6UFD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.4438 
RS 30 3 0.001 
RG 20 2 351 
CGS 2 3 4.728E-011 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 9E-011 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 1.479 KAPPA = 19.32 VTO = -0.8293 
.MODEL DCGD D CJO = 2.973E-011 VJ = 0.7863 M = 0.6 
.MODEL DSUB D IS = 1.085E-008 N = 1.536 RS = 1.529 BV = 23 CJO = 1.064E-011 VJ = 0.76 M = 0.6  
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP21D6UFD Spice Model v1.0M Last Revised 2017/12/15


*---------- DMP2003UPS Spice Model ----------
.SUBCKT DMP2003UPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.0003964 
RS 30 3 0.001 
RG 20 2 13.18 
CGS 2 3 8.007E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 3.8E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 763.4 KAPPA = 19.32 VTO = -1.08 
.MODEL DCGD D CJO = 1.7E-009 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.712E-008 N = 1.174 RS = 0.0001033 BV = 25.5 CJO = 3E-009 VJ = 0.8 M = 0.6 TT = 1.2E-008 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP2003UPS Spice Model v1.0M Last Revised 2017/10/13


*---------- DMN3009LFVW Spice Model ----------
.SUBCKT DMN3009LFVW 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.002613 
RS 30 3 1E-008 
RG 20 2 2.2 
CGS 2 3 1.778E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.6E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 1.773 
+ TOX = 6E-008 NSUB = 1E+016 KP = 235.8 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 1.354E-009 VJ = 0.8372 M = 0.51 
.MODEL DSUB D IS = 2.529E-010 N = 1.173 RS = 0.001642 BV = 35.37 CJO = 2.225E-010 VJ = 0.1191 M = 0.564 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN3009LFVW  Spice Model v1.0 Last Revised 2016/8/03



*---------- DMN2044UCB4 Spice Model ----------
.SUBCKT DMN2044UCB4 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01819 
RS 30 3 0.001 
RG 20 2 0.98 
CGS 2 3 9.562E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.7E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8805 
+ TOX = 6E-008 NSUB = 1E+016 KP = 66.63 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 6.191E-010 VJ = 0.6 M = 0.6141 
.MODEL DSUB D IS = 1.072E-009 N = 1.11 RS = 0.0616 BV = 22 CJO = 6E-011 VJ = 0.8 M = 0.6 TT = 3.9E-009 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN2044UCB4 Spice Model v1.0M Last Revised 2017/12/1


*---------- DMP4065SQ Spice Model ----------
.SUBCKT DMP4065SQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.04289 
RS 30 3 0.001 
RG 20 2 10.24 
CGS 2 3 5.75E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 4.5E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 8.015 KAPPA = 19.32 VTO = -1.585 
.MODEL DCGD D CJO = 1.7E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.364E-010 N = 1.26 RS = 0.0254 BV = 46 CJO = 2.226E-010 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP4065SQ Spice Model v1.0M Last Revised 2017/9/19


*---------- DMP1012UFDF Spice Model ----------
.SUBCKT DMP1012UFDF 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.006568 
RS 30 3 0.001 
RG 20 2 14.81 
CGS 2 3 1.032E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 2.35E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 82.23 KAPPA = 19.32 VTO = -0.7535 
.MODEL DCGD D CJO = 1.705E-009 VJ = 0.6 M = 0.6012 
.MODEL DSUB D IS = 1.388E-007 N = 1.21 RS = 0.0255 BV = 10 CJO = 3.453E-010 VJ = 0.6 M = 0.6726 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP1012UFDF Spice Model v1.0 Last Revised 2015/8/27


*---------- DMT40M9LPS Spice Model ----------
.SUBCKT DMT40M9LPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.0005801 
RS 30 3 1E-015 
RG 20 2 3.57 
CGS 2 3 1.316E-008 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.646 
+ TOX = 6E-008 NSUB = 1E+016 KP = 975.9 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.704E-009 VJ = 0.785 M = 0.8 
.MODEL DSUB D IS = 4.197E-010 N = 1.139 RS = 4.441E-010 BV = 44 CJO = 1E-008 VJ = 0.8 M = 0.6 TT=4.1E-08
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT40M9LPS Spice Model v1.0 Last Revised 2017/12/26


*---------- DMTH4011SPD Spice Model ----------
.SUBCKT DMTH4011SPD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.007344 
RS 30 3 1E-015 
RG 20 2 2.76 
CGS 2 3 7.856E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.138 
+ TOX = 6E-008 NSUB = 1E+016 KP = 34.25 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.712E-010 VJ = 0.8 M = 0.7249 
.MODEL DSUB D IS = 2.227E-010 N = 1.288 RS = 0.007593 BV = 43 CJO = 6E-010 VJ = 0.8 M = 0.6 TT = 5E-009
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH4011SPD Spice Model v1.0 Last Revised 2018/1/2


*---------- DMC3025LSDQ Spice Model ----------

*NMOS
.SUBCKT DMC3025LSDQ_NMOS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01437 
RS 30 3 0.001 
RG 20 2 1.84 
CGS 2 3 4.55E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 4.1E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 2.222 
+ TOX = 6E-008 NSUB = 1E+017 KP = 35.61 KAPPA = 1E-015 U0 = 400 
.MODEL DCGD D CJO = 2.222E-010 VJ = 0.2975 M = 0.3378 
.MODEL DSUB D IS = 2.278E-010 N = 1.242 RS = 0.007361 
+ BV = 35 CJO = 4.795E-011 VJ = 0.3436 M = 0.5232 
.MODEL DLIM D IS = 0.0001 
.ENDS


*PMOS

.SUBCKT DMC3025LSDQ_PMOS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01769 
RS 30 3 0.001 
RG 20 2 10.8 
CGS 2 3 5.834E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 3.85E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 TOX = 6E-008 
+ NSUB = 1E+016 KP = 8.945 KAPPA = 11.93 VTO = -1.877 
.MODEL DCGD D CJO = 1.097E-010 VJ = 1 M = 0.24 
.MODEL DSUB D IS = 2.613E-010 N = 1.268 RS = 0.01102 BV = 50 
+ CJO = 1.637E-010 VJ = 0.753 M = 0.6004 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMC3025LSDQ Spice Model v1.0 Last Revised 2018/1/3


*---------- ZXMN6A08GQ Spice Model ----------
.SUBCKT ZXMN6A08GQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.03422 
RS 30 3 0.001 
RG 20 2 1.51 
CGS 2 3 4.009E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 4.8E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.887 
+ TOX = 6E-008 NSUB = 1E+016 KP = 7.677 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 2.6E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 1.504E-009 N = 1.348 RS = 0.02116 BV = 68 CJO = 2.699E-010 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes ZXMN6A08GQ Spice Model v1.0 Last Revised 2017/12/15


*---------- DMTH43M8LPSQ Spice Model ----------
.SUBCKT DMTH43M8LPSQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001508 
RS 30 3 0.0005 
RG 20 2 2.54 
CGS 2 3 2.691E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 9.5E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.6 
+ TOX = 6E-008 NSUB = 1E+016 KP = 120 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 5.505E-010 VJ = 0.8 M = 0.7773 
.MODEL DSUB D IS = 2.615E-010 N = 1.185 RS = 0.003471 BV = 45 CJO = 3E-009 VJ = 0.8 M = 0.6 TT=1.77E-08
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH43M8LPSQ Spice Model v1.0 Last Revised 2017/6/12



*SDM1100S1F Spice Model v1.0 Last Revised 1/19/2018  Diodes Inc SUPER BARRIER RECTIFIER
 SIMULATOR=SPICE3
.MODEL DI_SDM1100S1F D  ( IS=5.225n RS=119.2m BV=104.0 IBV=10.00
+ CJO=223.1p M=336.8m N=1.126 TT=9.5n EG=480.0m VJ=24.16m )

*                (c)  2018 Diodes Incorporated
*
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Diodes ").  They  are  supplied
*   free of charge by Diodes for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved. The models
*   are believed accurate but  no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan


*---------- DMTH10H010LPS Spice Model ----------
.SUBCKT DMTH10H010LPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.00344 
RS 30 3 0.001 
RG 20 2 1.2 
CGS 2 3 3.2E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.3E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.295 
+ TOX = 6E-008 NSUB = 1E+016 KP = 91.79 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 3.556E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.234E-010 N = 1.212 RS = 4.441E-010 BV = 108 CJO = 2E-009 VJ = 0.8 M = 0.6 TT = 3.5E-008 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH10H010LPS Spice Model v1.0 Last Revised 2017/12/6



*---------- DMTH10H010SPS Spice Model ----------
.SUBCKT DMTH10H010SPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.00344 
RS 30 3 0.001 
RG 20 2 1.2 
CGS 2 3 3.2E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.3E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.295 
+ TOX = 6E-008 NSUB = 1E+016 KP = 91.79 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 3.556E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.234E-010 N = 1.212 RS = 4.441E-010 BV = 108 CJO = 2E-009 VJ = 0.8 M = 0.6 TT = 3.5E-008 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH10H010SPS Spice Model v1.0 Last Revised 2017/12/6



*---------- DMT10H010SPS Spice Model ----------
.SUBCKT DMT10H010SPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.00344 
RS 30 3 0.001 
RG 20 2 1.2 
CGS 2 3 3.2E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.3E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.295 
+ TOX = 6E-008 NSUB = 1E+016 KP = 91.79 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 3.556E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.234E-010 N = 1.212 RS = 4.441E-010 BV = 108 CJO = 2E-009 VJ = 0.8 M = 0.6 TT = 3.5E-008 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT10H010SPS Spice Model v1.0 Last Revised 2017/12/6



*---------- DMTH4011SPDQ Spice Model ----------
.SUBCKT DMTH4011SPDQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.007344 
RS 30 3 1E-015 
RG 20 2 2.76 
CGS 2 3 7.856E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.138 
+ TOX = 6E-008 NSUB = 1E+016 KP = 34.25 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.712E-010 VJ = 0.8 M = 0.7249 
.MODEL DSUB D IS = 2.227E-010 N = 1.288 RS = 0.007593 BV = 43 CJO = 6E-010 VJ = 0.8 M = 0.6 TT = 5E-009
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH4011SPDQ Spice Model v1.0 Last Revised 2018/1/2


*---------- DMPH6050SFGQ Spice Model ----------
.SUBCKT DMPH6050SFGQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.02655 
RS 30 3 0.001 
RG 20 2 15.97 
CGS 2 3 1.62E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1.25E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 25.05 KAPPA = 19.32 VTO = -2.321 
.MODEL DCGD D CJO = 3.1E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.351E-010 N = 1.253 RS = 0.006785 BV = 69 CJO = 2.217E-010 VJ = 0.8 M = 0.6 TT=7.59E-09
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMPH6050SFGQ Spice Model v1.0M Last Revised 2018/1/16


*---------- DMP6050SPS Spice Model ----------
.SUBCKT DMP6050SPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.02655 
RS 30 3 0.001 
RG 20 2 15.97 
CGS 2 3 1.62E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1.25E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 25.05 KAPPA = 19.32 VTO = -2.321 
.MODEL DCGD D CJO = 3.1E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.351E-010 N = 1.253 RS = 0.006785 BV = 69 CJO = 2.217E-010 VJ = 0.8 M = 0.6 TT=7.59E-09
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP6050SPS Spice Model v1.0M Last Revised 2018/1/3


*---------- DMN3009SFGQ Spice Model ----------
.SUBCKT DMN3009SFGQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.002613 
RS 30 3 1E-008 
RG 20 2 2.2 
CGS 2 3 1.778E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.6E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 1.773 
+ TOX = 6E-008 NSUB = 1E+016 KP = 235.8 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 1.354E-009 VJ = 0.8372 M = 0.51 
.MODEL DSUB D IS = 2.529E-010 N = 1.173 RS = 0.001642 BV = 35.37 CJO = 2.225E-010 VJ = 0.1191 M = 0.564 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN3009SFGQ  Spice Model v1.0 Last Revised 2017/12/15



*---------- DMP34M4SPS Spice Model ----------
.SUBCKT DMP34M4SPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001 
RS 30 3 0.001 
RG 20 2 21.06 
CGS 2 3 3.557E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 8.5E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 105.6 KAPPA = 19.32 VTO = -3 
.MODEL DCGD D CJO = 9E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.318E-010 N = 1.196 RS = 2.078E-009 BV = 35 CJO = 2.5E-009 VJ = 0.8 M = 0.6 TT = 1.3E-008 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP3125L Spice Model v1.0M Last Revised 2017/10/12


*---------- DMP2022LSS Spice Model ----------
.SUBCKT DMP2022LSS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.007151 
RS 30 3 0.001 
RG 20 2 13.61 
CGS 2 3 1.622E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 3.5E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 121.7 KAPPA = 19.32 VTO = -1.167 
.MODEL DCGD D CJO = 1.792E-009 VJ = 0.6 M = 0.6003 
.MODEL DSUB D IS = 6.504E-009 N = 1.17 RS = 0.01543 BV = 25 CJO = 1.144E-010 VJ = 0.799 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP2022LSS Spice Model v1.0M Last Revised 2016/6/20


*---------- DMG4822SSDQ Spice Model ----------
.SUBCKT DMG4822SSDQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.01149 
RS 30 3 0.001002 
RG 20 2 1.13 
CGS 2 3 4.216E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 4.55E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8.276E+005  ETA = 0.02587  VTO = 2.098 
+ TOX = 6.045E-008  NSUB = 1.406E+017  KP = 34.37  KAPPA = 1E-015  U0 = 4.441E-010 
.MODEL DCGD D  CJO = 2.453E-010  VJ = 0.1563  M = 0.3026 
.MODEL DSUB D  IS = 1.188E-009  N = 1.345  RS = 0.004578 
+ BV = 35  CJO = 1.739E-010  VJ = 0.4139  M = 0.4368 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMG4822SSDQ Spice Model v1.0 Last Revised 2017/12/25


*---------- DMC25D0UVT Spice Model ----------

*NMOS
.SUBCKT DMC25D0UVT_N 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.5296 
RS 30 3 0.08274 
RG 20 2 84 
CGS 2 3 2.421E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 6.2E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8E+005  ETA = 0.001  VTO = 0.9252 
+ TOX = 6E-008  NSUB = 1E+016  KP = 1.517  U0 = 400  KAPPA = 4.441E-010 
.MODEL DCGD D  CJO = 1.033E-011  VJ = 0.2003  M = 0.3 
.MODEL DSUB D  IS = 1.714E-009  N = 1.454  RS = 0.03011  BV = 35  CJO = 1.259E-011  VJ = 0.6  M = 0.3013 
.MODEL DLIM D  IS = 0.0001 
.ENDS


*PMOS
.SUBCKT DMC25D0UVT_P 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.04181 
RS 30 3 0.001 
RG 20 2 12.29 
CGS 2 3 3.719E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 1.46E-009 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1E+006  ETA = 0.001 
+ TOX = 6E-008  NSUB = 1E+016  KP = 9.397  KAPPA = 9.681  VTO = -1.023 
.MODEL DCGD D  CJO = 3.903E-010  VJ = 0.2566  M = 0.45 
.MODEL DSUB D  IS = 2.936E-009  N = 1.327  RS = 0.07557  BV = 33  CJO = 1.598E-010  VJ = 0.4699  M = 0.5274 
.MODEL DLIM D  IS = 0.0001 
.ENDS

*Diodes DMC25D0UVT Spice Model v1.0 Last Revised 2015/6/4


*---------- DMC1030UFDB Spice Model ----------

*NMOS

.SUBCKT DMC1030UFDB 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01313 
RS 30 3 0.001 
RG 20 2 1.63 
CGS 2 3 8.902E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.22E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7701 
+ TOX = 6E-008 NSUB = 1E+016 KP = 89.51 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 4.613E-010 VJ = 0.6179 M = 0.6 
.MODEL DSUB D IS = 1.7E-009 N = 1.041 RS = 0.0586 BV = 20 CJO = 2.066E-015 VJ = 0.7549 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS


*PMOS

.SUBCKT DMC1030UFDB 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.03274 
RS 30 3 0.001 
RG 20 2 4.88 
CGS 2 3 7.966E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 9.5E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 22.87 KAPPA = 19.32 VTO = -0.844 
.MODEL DCGD D CJO = 8.091E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 1.135E-008 N = 1.287 RS = 0.07544 BV = 20 CJO = 1.739E-010 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMC1030UFDB Spice Model v1.0M Last Revised 2018/2/1


*---------- DMC2700UDM Spice Model ----------

*NMOS

.SUBCKT DMC2700UDM_N 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.2097 
RS 30 3 0.001 
RG 20 2 155.2 
CGS 2 3 5E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 9E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8699 
 +TOX = 6E-008 NSUB = 1E+016 KP = 5.296 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 2.5E-011 VJ = 0.6 M = 0.7342 
.MODEL DSUB D IS = 8.403E-009 N = 1.531 RS = 0.4153 BV = 26 CJO = 3.241E-012 VJ = 0.6 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS

*PMOS

.SUBCKT DMC2700UDM_P 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.309 
RS 30 3 0.001 
RG 20 2 168.8
CGS 2 3 5.175E-011 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 7E-011 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 1.529 KAPPA = 19.32 VTO = -0.8736 
.MODEL DCGD D CJO = 2.322E-011 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 1.357E-008 N = 1.581 RS = 0.8199 BV = 25 CJO = 1.5E-011 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMN2700UDM Spice Model v1.0 Last Revised 2018/2/1


*---------- DMC3016LSD Spice Model ----------

*NMOS

.SUBCKT DMC3016LSD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.007058 
RS 30 3 0.001 
RG 20 2 2.94 
CGS 2 3 1.348E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.222 
+ TOX = 6E-008 NSUB = 1E+016 KP = 121.1 U0 = 400 KAPPA = 1E-015 
.MODEL DCGD D CJO = 3.779E-010 VJ = 0.6 M = 0.4637 
.MODEL DSUB D IS = 2.322E-010 N = 1.242 RS = 0.002024 BV = 45 CJO = 1.63E-010 VJ = 0.7 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS

*PMOS

.SUBCKT DMC3016LSD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01336 
RS 30 3 0.001 
RG 20 2 8.56 
CGS 2 3 1.2E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 6.5E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 18.68 KAPPA = 19.32 VTO = -1.634 
.MODEL DCGD D CJO = 2.5E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.291E-010 N = 1.209 RS = 0.01908 BV = 34 CJO = 2.5E-010 VJ = 0.8 M = 0.6 TT = 5.17E-009 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMC3016LSD Spice Model v1.0M Last Revised 2018/2/1


*---------- DMC3021LSDQ Spice Model ----------

*NMOS
.SUBCKT DMC3021LSDQ_N 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.005805 
RS 30 3 0.001 
RG 20 2 1.32 
CGS 2 3 6.922E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 9.2E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0.0143  VTO = 2.028 
+ TOX = 6E-008  NSUB = 1E+017  KP = 21.95  KAPPA = 105  U0 = 200 
.MODEL DCGD D  CJO = 4.611E-010  VJ = 0.3568  M = 0.4267 
.MODEL DSUB D  IS = 2.567E-010  N = 1.254  RS = 0.01257  BV = 35  CJO = 8.267E-011  VJ = 0.4558  M = 0.5515 
.MODEL DLIM D  IS = 0.0001 
.ENDS


*PMOS
.SUBCKT DMC3021LSDQ_P 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.02496 
RS 30 3 0.001 
RG 20 2 11.1 
CGS 2 3 8.938E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 8.92E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 2.425E+005 KP = 27.53 ETA = 0.0001 
+ TOX = 6E-008 NSUB = 1E+017 KAPPA = 2.932 VTO = -1.9 
.MODEL DCGD D CJO = 4.013E-010 VJ = 0.3844 M = 0.3457 
.MODEL DSUB D IS = 2.245E-010 N = 1.343 RS = 0.01819 
+ BV = 35 CJO = 7.964E-011 VJ = 3.068 M = 0.9583 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMC3021LSD Spice Model v2.0 Last Revised 2018/2/1


*---------- DMC3028LSD Spice Model ----------

*NMOS
.SUBCKT DMC3028LSD_N 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.0121 
RS 30 3 0.001 
RG 20 2 2.45 
CGS 2 3 5.929E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 6.45E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8E+005  ETA = 0.001  VTO = 1.863 
+ TOX = 6E-008  NSUB = 1E+016  KP = 52  U0 = 400  KAPPA = 4.441E-010 
.MODEL DCGD D  CJO = 3.069E-010  VJ = 0.7  M = 0.65 
.MODEL DSUB D  IS = 1.511E-011  N = 1.099  RS = 0.01954  BV = 45  CJO = 2.221E-010  VJ = 0.6319  M = 0.7672 
.MODEL DLIM D  IS = 0.0001 
.ENDS

*PMOS
.SUBCKT DMC3028LSD_P 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01205 
RS 30 3 0.001 
RG 20 2 14.8 
CGS 2 3 1.141E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 8E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 1E-009 
+ TOX = 6E-008 NSUB = 1E+016 KP = 24.29 KAPPA = 55.87 VTO = -2.147 
.MODEL DCGD D CJO = 4.573E-010 VJ = 0.4119 M = 0.3922 
.MODEL DSUB D IS = 2.24E-010 N = 1.262 RS = 0.009108 
+ BV = 50 CJO = 2.261E-010 VJ = 0.5048 M = 0.5435 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMC3028LSD Spice Model v1.0  Last Revised 2015/1/30


*---------- DMC3028LSDX Spice Model ----------

*NMOS
.SUBCKT DMC3028LSDX_N 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.0121 
RS 30 3 0.001 
RG 20 2 2.45 
CGS 2 3 5.929E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 6.45E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8E+005  ETA = 0.001  VTO = 1.863 
+ TOX = 6E-008  NSUB = 1E+016  KP = 52  U0 = 400  KAPPA = 4.441E-010 
.MODEL DCGD D  CJO = 3.069E-010  VJ = 0.7  M = 0.65 
.MODEL DSUB D  IS = 1.511E-011  N = 1.099  RS = 0.01954  BV = 45  CJO = 2.221E-010  VJ = 0.6319  M = 0.7672 
.MODEL DLIM D  IS = 0.0001 
.ENDS

*PMOS
.SUBCKT DMC3028LSDX_P 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01205 
RS 30 3 0.001 
RG 20 2 14.8 
CGS 2 3 1.141E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 8E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 1E-009 
+ TOX = 6E-008 NSUB = 1E+016 KP = 24.29 KAPPA = 55.87 VTO = -2.147 
.MODEL DCGD D CJO = 4.573E-010 VJ = 0.4119 M = 0.3922 
.MODEL DSUB D IS = 2.24E-010 N = 1.262 RS = 0.009108 
+ BV = 50 CJO = 2.261E-010 VJ = 0.5048 M = 0.5435 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMC3028LSDX Spice Model v1.0  Last Revised 2015/1/30


*---------- DMC3028LSDXQ Spice Model ----------

*NMOS
.SUBCKT DMC3028LSDXQ_N 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.0121 
RS 30 3 0.001 
RG 20 2 2.45 
CGS 2 3 5.929E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 6.45E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8E+005  ETA = 0.001  VTO = 1.863 
+ TOX = 6E-008  NSUB = 1E+016  KP = 52  U0 = 400  KAPPA = 4.441E-010 
.MODEL DCGD D  CJO = 3.069E-010  VJ = 0.7  M = 0.65 
.MODEL DSUB D  IS = 1.511E-011  N = 1.099  RS = 0.01954  BV = 45  CJO = 2.221E-010  VJ = 0.6319  M = 0.7672 
.MODEL DLIM D  IS = 0.0001 
.ENDS

*PMOS
.SUBCKT DMC3028LSDXQ_P 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01205 
RS 30 3 0.001 
RG 20 2 14.8 
CGS 2 3 1.141E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 8E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 1E-009 
+ TOX = 6E-008 NSUB = 1E+016 KP = 24.29 KAPPA = 55.87 VTO = -2.147 
.MODEL DCGD D CJO = 4.573E-010 VJ = 0.4119 M = 0.3922 
.MODEL DSUB D IS = 2.24E-010 N = 1.262 RS = 0.009108 
+ BV = 50 CJO = 2.261E-010 VJ = 0.5048 M = 0.5435 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMC3028LSDXQ Spice Model v1.0  Last Revised 2015/1/30


*---------- DMC4040SSD Spice Model ----------

*NMOS
.SUBCKT DMC4040SSD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01247 
RS 30 3 0.001 
RG 20 2 1.29 
CGS 2 3 1.225E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.7E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.378 
+ TOX = 6E-008 NSUB = 1E+016 KP = 59.42 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 5.583E-010 VJ = 0.6 M = 0.6 
.MODEL DSUB D IS = 1.44E-009 N = 1.222 RS = 0.009951 BV = 47 CJO = 1E-015 VJ = 0.6 M = 0.7823 
.MODEL DLIM D IS = 0.0001 
.ENDS

*PMOS
.SUBCKT DMC4040SSD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.006043 
RS 30 3 0.001 
RG 20 2 6.43 
CGS 2 3 1.554E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1.4E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 
+ TOX = 6E-008 NSUB = 1E+016 KP = 11.66 KAPPA = 9.057 VTO = -1.385 
.MODEL DCGD D CJO = 5.62E-010 VJ = 0.6 M = 0.4221 
.MODEL DSUB D IS = 4.586E-010 N = 1.275 RS = 0.01773 BV = 50 CJO = 2.892E-010 VJ = 0.0947 M = 0.3174 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMC4040SSD Spice Model v1.0M Last Revised 2018/2/1



*---------- DMC4050SSD Spice Model ----------

*NMOS
.SUBCKT DMC4050SSD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01247 
RS 30 3 0.001 
RG 20 2 1.29 
CGS 2 3 1.225E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.7E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.378 
+ TOX = 6E-008 NSUB = 1E+016 KP = 59.42 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 5.583E-010 VJ = 0.6 M = 0.6 
.MODEL DSUB D IS = 1.44E-009 N = 1.222 RS = 0.009951 BV = 47 CJO = 1E-015 VJ = 0.6 M = 0.7823 
.MODEL DLIM D IS = 0.0001 
.ENDS

*PMOS
.SUBCKT DMC4050SSD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.006043 
RS 30 3 0.001 
RG 20 2 6.43 
CGS 2 3 1.554E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1.4E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 
+ TOX = 6E-008 NSUB = 1E+016 KP = 11.66 KAPPA = 9.057 VTO = -1.385 
.MODEL DCGD D CJO = 5.62E-010 VJ = 0.6 M = 0.4221 
.MODEL DSUB D IS = 4.586E-010 N = 1.275 RS = 0.01773 BV = 50 CJO = 2.892E-010 VJ = 0.0947 M = 0.3174 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMC4050SSD Spice Model v1.0M Last Revised 2018/2/1


*---------- DMC6040SSD Spice Model ----------

*NMOS

.SUBCKT DMC6040SSD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.03016 
RS 30 3 0.001 
RG 20 2 1.66 
CGS 2 3 1.107E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 8.5E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.359 
+ TOX = 6E-008 NSUB = 1E+016 KP = 58.33 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.99E-010 VJ = 0.7999 M = 0.6 
.MODEL DSUB D IS = 2.23E-010 N = 1.26 RS = 0.006689 BV = 67 CJO = 2.221E-010 VJ = 0.6969 M = 0.6 TT=7E-09
.MODEL DLIM D IS = 0.0001 
.ENDS

*PMOS

.SUBCKT DMC6040SSD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.0844 
RS 30 3 0.001 
RG 20 2 13.61 
CGS 2 3 1.079E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 7.5E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 14.83 KAPPA = 19.32 VTO = -1.879 
.MODEL DCGD D CJO = 2E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 3.531E-010 N = 1.296 RS = 0.01283 BV = 67 CJO = 2.66E-011 VJ = 0.8 M = 0.6 TT=7E-09
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMP6040SSD Spice Model v1.0M Last Revised 2018/2/1


*---------- DMT6016LND Spice Model ----------

*NMOS

.SUBCKT DMC6070LFDH_N 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.04411 
RS 30 3 0.001 
RG 20 2 1.31 
CGS 2 3 7.136E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 3.4E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.463 
+ TOX = 6E-008 NSUB = 1E+016 KP = 15.76 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.389E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.333E-010 N = 1.31 RS = 0.01036 BV = 60 CJO = 8.659E-011 VJ = 0.706 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS

*PMOS

*---------- DMC6070LFD_P Spice Model ----------
.SUBCKT DMC6070LFD_P 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.1006 
RS 30 3 0.001 
RG 20 2 13.07 
CGS 2 3 5.928E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 2.5E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 6.038 KAPPA = 19.32 VTO = -2.241 
.MODEL DCGD D CJO = 8.101E-011 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 4.484E-010 N = 1.368 RS = 0.02186 BV = 60 CJO = 7.164E-011 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMT6016LND Spice Model v1.0 Last Revised 2015/9/7



---------- DMG4N65CTI Spice Model ----------

.SUBCKT DMG4N65CTI 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 1.901 
RS 30 3 0.001 
RG 20 2 2.4 
CGS 2 3 8.859E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 7.5E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 1E-012 VTO = 4.347 
+ TOX = 6E-008 NSUB = 1E+016 KP = 4.509 U0 = 400 KAPPA = 13.05 
.MODEL DCGD D CJO = 3.337E-010 VJ = 0.6 M = 0.9816 
.MODEL DSUB D IS = 2.232E-010 N = 1.338 RS = 0.002184 
+ BV = 700 CJO = 1.208E-009 VJ = 0.4984 M = 0.83 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMG4N65CTI Spice Model v1.0 Last Revised 2018/2/1


*---------- DMG2301L Spice Model ----------
.SUBCKT DMG2301L 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.08416 
RS 30 3 0.001 
RG 20 2 40.9 
CGS 2 3 1.265E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1.85E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 6.629 KAPPA = 19.32 VTO = -0.6459 
.MODEL DCGD D CJO = 1.177E-010 VJ = 0.611 M = 0.6 
.MODEL DSUB D IS = 0.0001419 N = 4.041 RS = 7.253E-009 BV = 22 CJO = 2.853E-011 VJ = 0.7195 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMG2301L Spice Model v1.0M Last Revised 2018/2/1


*---------- DMG2302UQ Spice Model ----------
.SUBCKT DMG2302UQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.02745 
RS 30 3 0.001 
RG 20 2 2.64 
CGS 2 3 1E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.55E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.6118 
+ TOX = 6E-008 NSUB = 1E+016 KP = 11.46 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 7.358E-011 VJ = 0.7999 M = 0.6 
.MODEL DSUB D IS = 4.844E-007 N = 1.983 RS = 0.05975 BV = 20 CJO = 8E-011 VJ = 0.6 M = 0.7957 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMG2302UQ Spice Model v1.0 Last Revised 2018/2/1


*---------- DMG2305UXQ Spice Model ----------
.SUBCKT DMG2305UXQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.02969 
RS 30 3 0.001 
RG 20 2 15.2 
CGS 2 3 7.613E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1.28E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 26.49 KAPPA = 65.74 VTO = -0.8201 
.MODEL DCGD D CJO = 5.79E-010 VJ = 0.2973 M = 0.5774 
.MODEL DSUB D IS = 3.162E-009 N = 1.241 RS = 0.08353 BV = 1E+006 CJO = 5.653E-011 VJ = 0.008286 M = 0.1128 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMG2305UXQ Spice Model v1.0 Last Revised 2018/2/1


*---------- DMG6402LVT Spice Model ----------
.SUBCKT DMG6402LVT 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01735 
RS 30 3 0.001 
RG 20 2 1.51 
CGS 2 3 3.898E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 4.95E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 1.5 
+ TOX = 6E-008 NSUB = 1E+017 KP = 16.9 KAPPA = 9.834 U0 = 400 
.MODEL DCGD D CJO = 2.661E-010 VJ = 0.2369  M = 0.408 
.MODEL DSUB D IS = 1.445E-010 N = 1.257 RS = 0.01296 BV = 35 
+ CJO = 4.795E-011 VJ = 0.3436 M = 0.5232 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMG6402LVT Spice Model v2.0 Last Revised 2012/8/6


*---------- DMG6602SVTQ Spice Model ----------

*NMOS
.SUBCKT DMG6602SVTQ_N 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.01593 
RS 30 3 0.001 
RG 20 2 1.4 
CGS 2 3 2.711E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 5.2E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 5.378E+005  ETA = 0.001  VTO = 2.227 
+ TOX = 6E-008  NSUB = 1E+016  KP = 9.816  U0 = 400  KAPPA = 10 
.MODEL DCGD D  CJO = 2.317E-010  VJ = 0.2783  M = 0.4405 
.MODEL DSUB D  IS = 1E-015  N = 0.8731  RS = 0.04482  BV = 35  CJO = 1.086E-011  VJ = 0.4101  M = 0.9 
.MODEL DLIM D  IS = 0.0001 
.ENDS

*PMOS
.SUBCKT DMG6602SVTQ_P 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.04762 
RS 30 3 0.001 
RG 20 2 17 
CGS 2 3 3.334E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 3.9E-010 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 7.77E+005  ETA = 0.001 
+ TOX = 6E-008  NSUB = 1E+016  KP = 7.61  KAPPA = 25  VTO = -1.533 
.MODEL DCGD D  CJO = 1.725E-010  VJ = 0.4474  M = 0.3707 
.MODEL DSUB D  IS = 1.119E-011  N = 1.169  RS = 0.06724  BV = 35  CJO = 2.406E-011  VJ = 0.1  M = 0.8 
.MODEL DLIM D  IS = 0.0001 
.ENDS

*Diodes DMG6602SVTQ Spice Model v1.0 Last Revised 2018/2/1


*---------- DMG8880LK3 Spice Model ----------
.SUBCKT DMG8880LK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.004237 
RS 30 3 0.001 
RG 20 2 0.97 
CGS 2 3 1.154E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 1.22E-009 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 9.897E+005  ETA = 4.441E-017  VTO = 2.123 
+ TOX = 6E-008  NSUB = 1E+017  KP = 68.03  KAPPA = 416.1  U0 = 202.1 
.MODEL DCGD D  CJO = 7.076E-010  VJ = 0.225  M = 0.3502 
.MODEL DSUB D  IS = 2.798E-010  N = 1.195  RS = 0.003607  BV = 35  CJO = 1.85E-010  VJ = 0.7412  M = 0.6747 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMG8880LK3 Spice Model v1.0 Last Revised 2010/9/21



*---------- BSS123(Z) Spice Model ----------
.SUBCKT BSS123Z 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 2.298 
RS 30 3 0.001 
RG 20 2 17 
CGS 2 3 5.7E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.75 
+ TOX = 6E-008 NSUB = 1E+016 KP = 1.58 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.2E-011 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 1.847E-009 N = 1.638 RS = 0.1103 BV = 115 CJO = 1E-011 VJ = 0.7586 M = 0.6096 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes BSS123Z Spice Model v1.0M Last Revised 2016/10/6


*---------- BSS123WQ Spice Model ----------
.SUBCKT BSS123WQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 2.998 
RS 30 3 0.001 
RG 20 2 1.23 
CGS 2 3 1.9E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5.2E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.562 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.298 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 8E-012 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 7.832E-008 N = 2.128 RS = 0.06918 BV = 107 CJO = 1E-011 VJ = 0.7586 M = 0.6096 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes BSS123WQ Spice Model v1.0M Last Revised 2016/10/4


*---------- BSS138Z Spice Model ----------
.SUBCKT BSS138Z 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.9338 
RS 30 3 0.001 
RG 20 2 47 
CGS 2 3 1.906E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 4.9E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 1E-012 VTO = 1.422 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.5025 U0 = 400 KAPPA = 7.117 
.MODEL DCGD D CJO = 9.463E-012 VJ = 6.446 M = 0.9816 
.MODEL DSUB D IS = 7.582E-010 N = 1.586 RS = 0.1976 
+ BV = 65 CJO = 1.173E-011 VJ = 0.03727 M = 0.2868 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes BSS138Z Spice Model v1.0 Last Revised 2012/8/22


*---------- DMJ65H900HCTI Spice Model ----------
.SUBCKT DMJ70H600SH3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.3681 
RS 30 3 0.001 
RG 20 2 3.94 
CGS 2 3 6.303E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 6.6E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.027 
+ TOX = 6E-008 NSUB = 1E+016 KP = 1.26 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 7.15E-010 VJ = 0.6 M = 0.8 
.MODEL DSUB D IS = 2.295E-010 N = 1.299 RS = 0.007844 BV = 772 CJO = 4E-009 VJ = 0.6 M = 0.8 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMJ65H900HCTI Spice Model v1.0 Last Revised 2017/3/1


*---------- DMN10H120SE Spice Model ----------
.SUBCKT DMN10H120SE 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.05782 
RS 30 3 0.001 
RG 20 2 1.86 
CGS 2 3 5.654E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 3.75E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8E+005  ETA = 0.001  VTO = 3.378 
+ TOX = 6E-008  NSUB = 1E+016  KP = 20  U0 = 400  KAPPA = 1 
.MODEL DCGD D  CJO = 2.382E-010  VJ = 0.7  M = 0.7 
.MODEL DSUB D  IS = 9.862E-009  N = 1.554  RS = 4.441E-010  BV = 125  CJO = 4.436E-010  VJ = 0.7  M = 0.7033 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN10H120SE Spice Model v1.0 Last Revised 2018/2/1


*---------- DMN10H170SFDE Spice Model ----------
.SUBCKT DMN10H170SFDE 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.1083 
RS 30 3 1E-008 
RG 20 2 1.37 
CGS 2 3 1.07E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 3.5E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.715 
+ TOX = 6E-008 NSUB = 1E+016 KP = 20.25 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 2.221E-010 VJ = 0.1 M = 0.4408 
.MODEL DSUB D IS = 2.405E-010 N = 1.267 RS = 0.006864 BV = 116 CJO = 2.222E-010 VJ = 0.1225 M = 0.5115 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN10H170SFDE  Spice Model v1.0 Last Revised 2018/2/1


*---------- DMN10H170SFG Spice Model ----------
.SUBCKT DMN10H170SFG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.1083 
RS 30 3 1E-008 
RG 20 2 1.37 
CGS 2 3 1.07E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 3.5E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.715 
+ TOX = 6E-008 NSUB = 1E+016 KP = 20.25 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 2.221E-010 VJ = 0.1 M = 0.4408 
.MODEL DSUB D IS = 2.405E-010 N = 1.267 RS = 0.006864 BV = 116 CJO = 2.222E-010 VJ = 0.1225 M = 0.5115 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN10H170SFG  Spice Model v1.0 Last Revised 2018/2/1


*---------- DMN10H170SK3 Spice Model ----------
.SUBCKT DMN10H170SK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.1083 
RS 30 3 1E-008 
RG 20 2 1.37 
CGS 2 3 1.07E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 3.5E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.715 
+ TOX = 6E-008 NSUB = 1E+016 KP = 20.25 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 2.221E-010 VJ = 0.1 M = 0.4408 
.MODEL DSUB D IS = 2.405E-010 N = 1.267 RS = 0.006864 BV = 116 CJO = 2.222E-010 VJ = 0.1225 M = 0.5115 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN10H170SK3  Spice Model v1.0 Last Revised 2018/2/1


*---------- DMN10H170SVT Spice Model ----------
.SUBCKT DMN10H170SVT 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.1083 
RS 30 3 1E-008 
RG 20 2 1.37 
CGS 2 3 1.07E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 3.5E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.715 
+ TOX = 6E-008 NSUB = 1E+016 KP = 20.25 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 2.221E-010 VJ = 0.1 M = 0.4408 
.MODEL DSUB D IS = 2.405E-010 N = 1.267 RS = 0.006864 BV = 116 CJO = 2.222E-010 VJ = 0.1225 M = 0.5115 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN10H170SVT  Spice Model v1.0 Last Revised 2018/2/1


*---------- DMN10H220L Spice Model ----------
.SUBCKT DMN10H220L 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.1185 
RS 30 3 0.001 
RG 20 2 2.05 
CGS 2 3 3.939E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 3.2E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.875 
+ TOX = 6E-008 NSUB = 1E+016 KP = 7.549 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.543E-010 VJ = 0.6 M = 0.6016 
.MODEL DSUB D IS = 2.244E-010 N = 1.289 RS = 0.02506 BV = 105 CJO = 8E-011 VJ = 0.7087 M = 0.6107 TT = 8.5E-009 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN10H220L Spice Model v1.0M Last Revised 2018/2/1


*---------- DMN10H220LE Spice Model ----------
.SUBCKT DMN10H220LE 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.1185 
RS 30 3 0.001 
RG 20 2 2.05 
CGS 2 3 3.939E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 3.2E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.875 
+ TOX = 6E-008 NSUB = 1E+016 KP = 7.549 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.543E-010 VJ = 0.6 M = 0.6016 
.MODEL DSUB D IS = 2.244E-010 N = 1.289 RS = 0.02506 BV = 105 CJO = 8E-011 VJ = 0.7087 M = 0.6107 TT = 8.5E-009 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN10H220LE Spice Model v1.0M Last Revised 2018/2/1


*---------- DMN10H220LVT Spice Model ----------
.SUBCKT DMN10H220LVT 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.1185 
RS 30 3 0.001 
RG 20 2 2.05 
CGS 2 3 3.939E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 3.2E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.875 
+ TOX = 6E-008 NSUB = 1E+016 KP = 7.549 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.543E-010 VJ = 0.6 M = 0.6016 
.MODEL DSUB D IS = 2.244E-010 N = 1.289 RS = 0.02506 BV = 105 CJO = 8E-011 VJ = 0.7087 M = 0.6107 TT = 8.5E-009 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN10H220LVT Spice Model v1.0M Last Revised 2018/2/1


*---------- DMN15H310SE Spice Model ----------
.SUBCKT DMN15H310SE 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.1731 
RS 30 3 0.001 
RG 20 2 0.98 
CGS 2 3 3.848E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 3.1E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.651 
+ TOX = 6E-008 NSUB = 1E+016 KP = 11.81 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.862E-010 VJ = 0.6 M = 0.6 
.MODEL DSUB D IS = 3.094E-010 N = 1.262 RS = 0.01335 BV = 170 CJO = 2.22E-010 VJ = 0.6 M = 0.6149 TT=3.8E-08
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN15H310SE Spice Model v1.0 Last Revised 2018/2/1


*---------- DMN53D0L Spice Model ----------
.SUBCKT DMN53D0L 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.6021 
RS 30 3 0.001 
RG 20 2 29.9 
CGS 2 3 5E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5.8E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.411 
+ TOX = 6E-008 NSUB = 1E+016 KP = 1.08 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 3.516E-011 VJ = 0.6 M = 0.6 
.MODEL DSUB D IS = 4.736E-009 N = 1.687 RS = 0.2132 BV = 50 CJO = 2.22E-010 VJ = 0.1 M = 0.7932 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN53D0L Spice Model v1.0 Last Revised 2018/2/1


*---------- DMN53D0LDW Spice Model ----------
.SUBCKT DMN53D0LDW 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.6021 
RS 30 3 0.001 
RG 20 2 29.9 
CGS 2 3 5E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5.8E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.411 
+ TOX = 6E-008 NSUB = 1E+016 KP = 1.08 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 3.516E-011 VJ = 0.6 M = 0.6 
.MODEL DSUB D IS = 4.736E-009 N = 1.687 RS = 0.2132 BV = 50 CJO = 2.22E-010 VJ = 0.1 M = 0.7932 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN53D0LDW Spice Model v1.0 Last Revised 2018/2/1


*---------- DMN53D0LT Spice Model ----------
.SUBCKT DMN53D0LT 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.6021 
RS 30 3 0.001 
RG 20 2 29.9 
CGS 2 3 5E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5.8E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.411 
+ TOX = 6E-008 NSUB = 1E+016 KP = 1.08 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 3.516E-011 VJ = 0.6 M = 0.6 
.MODEL DSUB D IS = 4.736E-009 N = 1.687 RS = 0.2132 BV = 50 CJO = 2.22E-010 VJ = 0.1 M = 0.7932 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN53D0LT Spice Model v1.0 Last Revised 2018/2/1


*---------- DMN53D0LV Spice Model ----------
.SUBCKT DMN53D0LV 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.6021 
RS 30 3 0.001 
RG 20 2 29.9 
CGS 2 3 5E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5.8E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.411 
+ TOX = 6E-008 NSUB = 1E+016 KP = 1.08 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 3.516E-011 VJ = 0.6 M = 0.6 
.MODEL DSUB D IS = 4.736E-009 N = 1.687 RS = 0.2132 BV = 50 CJO = 2.22E-010 VJ = 0.1 M = 0.7932 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN53D0LV Spice Model v1.0 Last Revised 2018/2/1


*---------- DMN53D0LW Spice Model ----------
.SUBCKT DMN53D0LW 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.6021 
RS 30 3 0.001 
RG 20 2 29.9 
CGS 2 3 5E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5.8E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.411 
+ TOX = 6E-008 NSUB = 1E+016 KP = 1.08 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 3.516E-011 VJ = 0.6 M = 0.6 
.MODEL DSUB D IS = 4.736E-009 N = 1.687 RS = 0.2132 BV = 50 CJO = 2.22E-010 VJ = 0.1 M = 0.7932 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN53D0LW Spice Model v1.0 Last Revised 2018/2/1


*---------- DMN53D0U Spice Model ----------
.SUBCKT DMN53D0U 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.6021 
RS 30 3 0.001 
RG 20 2 29.9 
CGS 2 3 5E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5.8E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.411 
+ TOX = 6E-008 NSUB = 1E+016 KP = 1.08 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 3.516E-011 VJ = 0.6 M = 0.6 
.MODEL DSUB D IS = 4.736E-009 N = 1.687 RS = 0.2132 BV = 50 CJO = 2.22E-010 VJ = 0.1 M = 0.7932 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN53D0U Spice Model v1.0 Last Revised 2018/2/1


*DIODES_INC_SPICE_MODEL DMN61D8L N-channel MOSFET
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=24/08/2015
*VERSION=1


**Pin order:  Drain=10, Gate=50, Source=30
.SUBCKT DMN61D8L 10 50 30
M1 1 2 3 3  Nmod1
RD 10 1 Rmod1 1.02
RS 23 3 Rmod1 .08
RG 20 22 50
RIN 20 23 2E11
RDS 10 23 6E9
CGS 2 3 30E-12 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 40E-12 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 23 10  DSUB
EL 2 22 1 3 0.022
LS  30 23  1n



*ESD and Clamp structures
Dclamp1 10 55 Dclamp
Dclamp2 20 55 Dclamp


*---------- DMN62D0SFD Spice Model ----------
.SUBCKT DMN62D0SFD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 1.631 
RS 30 3 0.001 
RG 20 2 133 
CGS 2 3 2.79E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 3.4E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0  VTO = 1.596 
+ TOX = 6E-008  NSUB = 1.945E+017  KP = 1.196  KAPPA = 1E-015  U0 = 400  THETA = 5.648E-007 
.MODEL DCGD D  CJO = 1.283E-011  VJ = 0.6  M = 0.4065 
.MODEL DSUB D  IS = 2.05E-009  N = 1.698  RS = 0.1282  BV = 65  CJO = 8.365E-012  VJ = 0.7198  M = 0.6 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN62D0SFD Spice Model v1.1 Last Revised 2018/2/1


*---------- DMN62D1LFD Spice Model ----------
.SUBCKT DMN62D1LFD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.8574 
RS 30 3 0.001 
RG 20 2 81.24 
CGS 2 3 3.774E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 8.43E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8E+005  ETA = 0.001  VTO = 1.584 
+ TOX = 6E-008  NSUB = 1E+016  KP = 0.9918  U0 = 400  KAPPA = 1 
.MODEL DCGD D  CJO = 2.818E-011  VJ = 0.4  M = 0.5368 
.MODEL DSUB D  IS = 6.562E-012  N = 1.326  RS = 0.08305  BV = 65  CJO = 5.117E-012  VJ = 0.4  M = 0.6 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN62D1LFD Spice Model v1.0 Last Revised 2018/2/1


*---------- DMN63D1L Spice Model ----------
.SUBCKT DMN63D1L 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 1.631 
RS 30 3 0.001 
RG 20 2 133 
CGS 2 3 2.711E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 2.628E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0  VTO = 1.596 
+ TOX = 6E-008  NSUB = 1.945E+017  KP = 1.196  KAPPA = 1E-015  U0 = 400  THETA = 5.648E-007 
.MODEL DCGD D  CJO = 2.628E-011  VJ = 0.6  M = 0.2561 
.MODEL DSUB D  IS = 2.05E-009  N = 1.698  RS = 0.1282  BV = 65  CJO = 6.226E-012  VJ = 1  M = 0.6474 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN63D1L Spice Model v1.0 Last Revised 2018/2/1


*---------- DMN63D1LW Spice Model ----------
.SUBCKT DMN63D1LW 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 1.631 
RS 30 3 0.001 
RG 20 2 133 
CGS 2 3 2.711E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 2.628E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0  VTO = 1.596 
+ TOX = 6E-008  NSUB = 1.945E+017  KP = 1.196  KAPPA = 1E-015  U0 = 400  THETA = 5.648E-007 
.MODEL DCGD D  CJO = 2.628E-011  VJ = 0.6  M = 0.2561 
.MODEL DSUB D  IS = 2.05E-009  N = 1.698  RS = 0.1282  BV = 65  CJO = 6.226E-012  VJ = 1  M = 0.6474 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN63D1LW Spice Model v1.0 Last Revised 2018/2/1


*---------- DMN65D8LQ Spice Model ----------
.SUBCKT DMN65D8LQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 2.175 
RS 30 3 0.001 
RG 20 2 79.9 
DESD1 2 5 DESD 
DESD2 3 5 DESD 
CGS 2 3 2.011E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5.9E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.595 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.58 U0 = 400 KAPPA = 4.069 
.MODEL DCGD D CJO = 1.646E-011 VJ = 0.1277 M = 0.4 
.MODEL DSUB D IS = 4.551E-009 N = 1.836 RS = 0.1357 
+ CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 
.MODEL DLIM D IS = 0.0001 
.MODEL DESD D IS = 1.223E-008 N = 54.79 BV = 5.385 
.ENDS
*Diodes DMN65D8LQ Spice Model v1.0 Last Revised 2018/2/1


*---------- DMN67D8L Spice Model ----------
.SUBCKT DMN67D8L 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.764 
RS 30 3 0.001 
RG 20 2 120 
CGS 2 3 1.982E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5.95E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.951 
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.3344 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.046E-011 VJ = 0.2615 M = 0.3137 
.MODEL DSUB D IS = 6.246E-010 N = 1.568 RS = 0.1544 BV = 75 CJO = 9.897E-012 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN67D8L Spice Model v1.0 Last Revised 2018/2/1


*---------- DMN313DLT Spice Model ----------
.SUBCKT DMN313DLT 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 1.188 
RS 30 3 0.001 
RG 20 2 127.7 
CGS 2 3 3.079E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 7.5E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 1.099 
+ TOX = 6E-008 NSUB = 1E+017 KP = 1.832 KAPPA = 1E-015 U0 = 400 
.MODEL DCGD D CJO = 1.712E-011 VJ = 0.6 M = 0.5004 
.MODEL DSUB D IS = 7.2E-007 N = 2.594 RS = 0.03889 
+ BV = 35 CJO = 4.301E-012 VJ = 0.2 M = 0.1735 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN313DLT Spice Model v1.0 Last Revised 2014/6/6


---------- DMN1019USN Spice Model ----------
.SUBCKT DMN1019USN 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.003695 
RS 30 3 0.001 
RG 20 2 1.12 
DESD1 2 5 DESD 
DESD2 3 5 DESD 
CGS 2 3 2.085E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 3.8E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001248 VTO = 0.9106 
+ TOX = 6E-008 NSUB = 1E+016 KP = 208.4 U0 = 400 KAPPA = 94.25 
.MODEL DCGD D CJO = 1.867E-009 VJ = 0.2465 M = 0.4333 
.MODEL DSUB D IS = 2.007E-009 N = 1.095 RS = 0.01324 
+ BV = 20 CJO = 5.112E-012 VJ = 6.535E-009 M = 0.00671 
.MODEL DLIM D IS = 0.0001 
.MODEL DESD D IS = 1.223E-008 N = 54.81 BV = 5.381 
.ENDS
*Diodes DMN1019USN Spice Model v1.0 Last Revised 2018/2/1


*---------- DMN1019UVT Spice Model ----------
.SUBCKT DMN1019UVT 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.003695 
RS 30 3 0.001 
RG 20 2 1.12 
DESD1 2 5 DESD 
DESD2 3 5 DESD 
CGS 2 3 2.085E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 3.8E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001248 VTO = 0.9106 
+ TOX = 6E-008 NSUB = 1E+016 KP = 208.4 U0 = 400 KAPPA = 94.25 
.MODEL DCGD D CJO = 1.867E-009 VJ = 0.2465 M = 0.4333 
.MODEL DSUB D IS = 2.007E-009 N = 1.095 RS = 0.01324 
+ BV = 20 CJO = 5.112E-012 VJ = 6.535E-009 M = 0.00671 
.MODEL DLIM D IS = 0.0001 
.MODEL DESD D IS = 1.223E-008 N = 54.81 BV = 5.381 
.ENDS
*Diodes DMN1019UVT Spice Model v1.0 Last Revised 2018/2/1


*---------- DMN1150UFB Spice Model ----------
.SUBCKT DMN1150UFB 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.05481 
RS 30 3 0.001 
RG 20 2 90 
CGS 2 3 6.366E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.707E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.7353 
+ TOX = 6E-008 NSUB = 1E+016 KP = 11.2 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 2.627E-010 VJ = 1 M = 0.9231 
.MODEL DSUB D IS = 1.294E-009 N = 1.166 RS = 0.4831 BV = 16.8 CJO = 1.444E-015 VJ = 0.1 M = 0.9578 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN1150UFB  Spice Model v1.0 Last Revised 2018/2/1


*---------- DMN2005UFG Spice Model ----------
.SUBCKT DMN2005UFG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001735 
RS 30 3 1E-006 
RG 20 2 0.73 
CGS 2 3 4.893E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 8.203E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.8495 
+ TOX = 6E-008 NSUB = 1E+016 KP = 404.4 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 3.312E-009 VJ = 0.1775 M = 0.4588 
.MODEL DSUB D IS = 7.261E-009 N = 1.052 RS = 0.006412 BV = 28 CJO = 5.538E-010 VJ = 0.3369 M = 0.6764 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN2005UFG  Spice Model v1.0 Last Revised 2018/2/1


*---------- DMN2011UFX Spice Model ----------
.SUBCKT DMN2011UFX 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.0032 
RS 30 3 0.001 
RG 20 2 1.49 
CGS 2 3 1.99E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 3.25E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.95 
+ TOX = 6E-008 NSUB = 1E+016 KP = 184 U0 = 400 KAPPA = 80 
.MODEL DCGD D CJO = 1.288E-009 VJ = 0.6701 M = 0.6 
.MODEL DSUB D IS = 3.806E-009 N = 1.128 RS = 0.007 
+ BV = 30 CJO = 1.91E-010 VJ = 1E-015 M = 0.03576 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN2011UFX Spice Model v1.0 Last Revised 2018/2/1


*DIODES_INC_SPICE_MODEL DMN2013UFX
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=31Mar2104
*VERSION=1
*PINS 10=D 20=G 30=S


.SUBCKT DMN2013UFDE   10 20 30
M1 1 2 3 3  Nmod1
RD 10 1 Rmod1 4E-3
RS 23 3 Rmod1 3E-3
RG 20 22 1.2
RIN 20 23 2E11
RDS 10 23 2E9
CGS 2 3 1200E-12 
EGD 12 0 2 1 1
*REGD 12 0 1
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1900E-12 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 23 10 DSUB
EL 2 22 1 3 .005
RL 30 23 3
LS  30 23 2E-9
.MODEL Nmod1 NMOS (LEVEL=3 VTO=.9 TOX=4.5E-8 NSUB=1E+16 KP=190 NFS=1E+11 IS=1E-15 N=10)
.MODEL DCGD D (CJO = 180E-12  VJ = 0.45  M = 0.33 T_ABS=25)
.MODEL DSUB D (IS=200E-12 N=1 RS=0.0128 BV=22 CJO=94E-12 VJ=0.45 M=0.33 TT=3E-9)
.MODEL DLIM D (IS=100U N=1 T_ABS=25)
.MODEL Rmod1 RES (TC1=.3e-3 TC2=1E-6)
.ENDS


*                     (c)  2014 Diodes Inc
*   The copyright in these models  and  the designs embodied belong
*   to Diodes Incorporated (" Zetex ").  They  are  supplied
*   free of charge by Zetex for the purpose of research and design
*   and may be used or copied intact  (including this notice)  for
*   that purpose only.  All other rights are reserved.  The models
*   are believed accurate but no condition  or warranty  as to their
*   merchantability or fitness for purpose is given and no liability
*   in respect of any use is accepted by Diodes Incorporated, its distributors
*   or agents.
*
*   Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
*   Oldham, United Kingdom, OL9 9LL
*


*---------- DMN2015UFDE Spice Model ----------
.SUBCKT DMN2015UFDE 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.005835 
RS 30 3 0.001 
RG 20 2 1.34 
CGS 2 3 1.233E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.6E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.036 
+ TOX = 6E-008 NSUB = 1E+016 KP = 237.4 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.251E-009 VJ = 0.6 M = 0.6285 
.MODEL DSUB D IS = 1.124E-009 N = 1.134 RS = 0.007534 BV = 25 CJO = 2.22E-010 VJ = 0.6 M = 0.6283 TT=5.78E-09
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN2015UFDE Spice Model v1.0M Last Revised 2018/2/1


*---------- DMN2016LFG Spice Model ----------
.SUBCKT DMN2016LFG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.01185 
RS 30 3 0.001 
RG 20 2 1.42 
CGS 2 3 1.392E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 1.85E-009 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0.01011  VTO = 1.042 
+ TOX = 6E-008  NSUB = 1E+016  KP = 143.4  KAPPA = 20.85  U0 = 400 
.MODEL DCGD D  CJO = 6.156E-010  VJ = 0.1767  M = 0.3617 
.MODEL DSUB D  IS = 7.1E-010  N = 1.3  RS = 0.01232  BV = 25  CJO = 7.957E-011  VJ = 0.3347  M = 0.4933 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN2016LFG Spice Model v1.0 Last Revised 2018/2/1


*---------- DMN2016LHAB Spice Model ----------
.SUBCKT DMN2016LHAB 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.01185 
RS 30 3 0.001 
RG 20 2 1.42 
CGS 2 3 1.392E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 1.85E-009 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0.01011  VTO = 1.042 
+ TOX = 6E-008  NSUB = 1E+016  KP = 143.4  KAPPA = 20.85  U0 = 400 
.MODEL DCGD D  CJO = 6.156E-010  VJ = 0.1767  M = 0.3617 
.MODEL DSUB D  IS = 7.1E-010  N = 1.3  RS = 0.01232  BV = 25  CJO = 7.957E-011  VJ = 0.3347  M = 0.4933 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN2016LHAB Spice Model v1.0 Last Revised 2018/2/1


*SYM=POWMOSN
.SUBCKT DMN2020UFCL   D=10 G=20 S=30
*     TERMINALS:  D  G  S
M1   1  2  3  3  NMOS L=0.6U W=1943.229m
RD  10  1  5m
RS  30  3  4m
RG  20  2  1.5
CGS  2  3  952p
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  550p
R1  13  0  1.00
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1.00
D2  15  0  DLIM
DSD  3 10  DSUB
.MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k
+ ETA=0.1m VTO=1.525 TOX=25n NSUB=5.3e16
.MODEL DCGD D CJO=550p VJ=0.350 M=0.410
.MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20
+ CJO=116p VJ=0.120 M=0.380
.MODEL DLIM D IS=100U
.ENDS


*---------- DMN2020UFCL Spice Model ----------
.SUBCKT DMN2020UFCL 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.01083 
RS 30 3 0.001 
RG 20 2 1.51 
CGS 2 3 1.024E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 1.4E-09 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8E+005  ETA = 0.004367  VTO = 1.404 
+ TOX = 6E-008  NSUB = 5.26E+016  KP = 106.5  KAPPA = 22.88  U0 = 400 
.MODEL DCGD D  CJO = 6.156E-010  VJ = 0.1767  M = 0.3617 
.MODEL DSUB D  IS = 1.112E-009  N = 1.26  RS = 0.01288  BV = 25  CJO = 7.957E-011  VJ = 0.3347  M = 0.4933 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN2020UFCL Spice Model v1.0 Last Revised 2011/1/28


*---------- DMN2020UFDF Spice Model ----------
.SUBCKT DMN2020UFDF 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.01083 
RS 30 3 0.001 
RG 20 2 1.51 
CGS 2 3 1.024E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 1.4E-09 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8E+005  ETA = 0.004367  VTO = 1.404 
+ TOX = 6E-008  NSUB = 5.26E+016  KP = 106.5  KAPPA = 22.88  U0 = 400 
.MODEL DCGD D  CJO = 6.156E-010  VJ = 0.1767  M = 0.3617 
.MODEL DSUB D  IS = 1.112E-009  N = 1.26  RS = 0.01288  BV = 25  CJO = 7.957E-011  VJ = 0.3347  M = 0.4933 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN2020UFDF Spice Model v1.0 Last Revised 2011/1/28


*---------- DMN2022UFDF Spice Model ----------
.SUBCKT DMN2022UFDF 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.007593 
RS 30 3 0.001 
RG 20 2 95.7 
CGS 2 3 1.702E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.7E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.9482 
+ TOX = 6E-008 NSUB = 1E+016 KP = 146.6 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 8.774E-010 VJ = 0.6 M = 0.6 
.MODEL DSUB D IS = 1.408E-008 N = 1.274 RS = 0.01256 BV = 20 CJO = 5.835E-010 VJ = 0.8 M = 0.6 TT=1.49E-7
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN2022UFDF Spice Model v1.0 Last Revised 2018/2/1


*---------- DMN2026UVT Spice Model ----------
.SUBCKT DMN2026UVT 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.01441 
RS 30 3 0.001 
RG 20 2 202.6 
CGS 2 3 1.466E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 1E-009 
R1 13 30 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1.361E+005  ETA = 0.001  VTO = 0.8913 
+ TOX = 6E-008  NSUB = 1E+016  KP = 97.33  KAPPA = 1  U0 = 400 
.MODEL DCGD D  CJO = 2.802E-010  VJ = 0.2313  M = 0.4878 
.MODEL DSUB D  IS = 2.098E-009  N = 1.133  RS = 0.02894  BV = 25  CJO = 2.541E-010  VJ = 0.1292  M = 0.32 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN2026UVT Spice Model v1.0 Last Revised 2015/7/3


*---------- DMN2027USS Spice Model ----------
.SUBCKT DMN2027USS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.007309 
RS 30 3 1E-008 
RG 20 2 1.5 
CGS 2 3 9.632E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 1.095E-009 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8E+005  ETA = 0.001  VTO = 1.335 
+ TOX = 6E-008  NSUB = 1E+016  KP = 107.7  U0 = 400  KAPPA = 4.441E-010 
.MODEL DCGD D  CJO = 6.082E-010  VJ = 0.6  M = 0.5 
.MODEL DSUB D  IS = 3.253E-010  N = 1.168  RS = 0.01176  BV = 28  CJO = 2.221E-010  VJ = 0.6  M = 0.6492 
.MODEL DLIM D  IS = 0.0001 
.ENDS

*Diodes DMN2027USS  Spice Model v1.0 Last Revised 2018/2/1


*---------- DMN2028UFDF Spice Model ----------
.SUBCKT DMN2028UFDF 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.01441 
RS 30 3 0.001 
RG 20 2 202.6 
CGS 2 3 1.466E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 1E-009 
R1 13 30 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1.361E+005  ETA = 0.001  VTO = 0.8913 
+ TOX = 6E-008  NSUB = 1E+016  KP = 97.33  KAPPA = 1  U0 = 400 
.MODEL DCGD D  CJO = 2.802E-010  VJ = 0.2313  M = 0.4878 
.MODEL DSUB D  IS = 2.098E-009  N = 1.133  RS = 0.02894  BV = 25  CJO = 2.541E-010  VJ = 0.1292  M = 0.32 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN2028UFDF Spice Model v1.0 Last Revised 2015/7/3


*---------- DMN2028UFDH Spice Model ----------
.SUBCKT DMN2028UFDH 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.01441 
RS 30 3 0.001 
RG 20 2 202.6 
CGS 2 3 1.466E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 1E-009 
R1 13 30 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1.361E+005  ETA = 0.001  VTO = 0.8913 
+ TOX = 6E-008  NSUB = 1E+016  KP = 97.33  KAPPA = 1  U0 = 400 
.MODEL DCGD D  CJO = 2.802E-010  VJ = 0.2313  M = 0.4878 
.MODEL DSUB D  IS = 2.098E-009  N = 1.133  RS = 0.02894  BV = 25  CJO = 2.541E-010  VJ = 0.1292  M = 0.32 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN2028UFDH Spice Model v1.0 Last Revised 2015/7/3


*---------- DMN2028UFU Spice Model ----------
.SUBCKT DMN2028UFU 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.01441 
RS 30 3 0.001 
RG 20 2 202.6 
CGS 2 3 1.466E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 1E-009 
R1 13 30 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1.361E+005  ETA = 0.001  VTO = 0.8913 
+ TOX = 6E-008  NSUB = 1E+016  KP = 97.33  KAPPA = 1  U0 = 400 
.MODEL DCGD D  CJO = 2.802E-010  VJ = 0.2313  M = 0.4878 
.MODEL DSUB D  IS = 2.098E-009  N = 1.133  RS = 0.02894  BV = 25  CJO = 2.541E-010  VJ = 0.1292  M = 0.32 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN2028UFU Spice Model v1.0 Last Revised 2015/7/3


*---------- DMN2028USS Spice Model ----------
.SUBCKT DMN2028USS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.01441 
RS 30 3 0.001 
RG 20 2 202.6 
CGS 2 3 1.466E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 1E-009 
R1 13 30 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1.361E+005  ETA = 0.001  VTO = 0.8913 
+ TOX = 6E-008  NSUB = 1E+016  KP = 97.33  KAPPA = 1  U0 = 400 
.MODEL DCGD D  CJO = 2.802E-010  VJ = 0.2313  M = 0.4878 
.MODEL DSUB D  IS = 2.098E-009  N = 1.133  RS = 0.02894  BV = 25  CJO = 2.541E-010  VJ = 0.1292  M = 0.32 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN2028USS Spice Model v1.0 Last Revised 2015/7/3


*---------- DMN2028UVT Spice Model ----------
.SUBCKT DMN2028UVT 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.01441 
RS 30 3 0.001 
RG 20 2 202.6 
CGS 2 3 1.466E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 1E-009 
R1 13 30 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1.361E+005  ETA = 0.001  VTO = 0.8913 
+ TOX = 6E-008  NSUB = 1E+016  KP = 97.33  KAPPA = 1  U0 = 400 
.MODEL DCGD D  CJO = 2.802E-010  VJ = 0.2313  M = 0.4878 
.MODEL DSUB D  IS = 2.098E-009  N = 1.133  RS = 0.02894  BV = 25  CJO = 2.541E-010  VJ = 0.1292  M = 0.32 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN2028UVT Spice Model v1.0 Last Revised 2015/7/3


*---------- DMN2041L Spice Model ----------
.SUBCKT DMN2041L 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.01312 
RS 30 3 0.001002 
RG 20 2 1.37 
CGS 2 3 4.74E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 9E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8E+005  ETA = 0.0001  VTO = 1.023 
+ TOX = 6E-008  NSUB = 1.901E+016  KP = 50  KAPPA = 30.04  U0 = 400 
.MODEL DCGD D  CJO = 4.457E-010  VJ = 0.2472  M = 0.4558 
.MODEL DSUB D  IS = 2.93E-009  N = 1.251  RS = 0.02983  BV = 25  CJO = 3.405E-011  VJ = 0.2561  M = 0.4362 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN2041L Spice Model v1.0 Last Revised 2018/2/1


*---------- DMN2041UFDB Spice Model ----------
.SUBCKT DMN2041UFDB 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.01312 
RS 30 3 0.001002 
RG 20 2 1.37 
CGS 2 3 4.74E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 9E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8E+005  ETA = 0.0001  VTO = 1.023 
+ TOX = 6E-008  NSUB = 1.901E+016  KP = 50  KAPPA = 30.04  U0 = 400 
.MODEL DCGD D  CJO = 4.457E-010  VJ = 0.2472  M = 0.4558 
.MODEL DSUB D  IS = 2.93E-009  N = 1.251  RS = 0.02983  BV = 25  CJO = 3.405E-011  VJ = 0.2561  M = 0.4362 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN2041UFDB Spice Model v1.0 Last Revised 2018/2/1


*---------- DMN2050LFDB Spice Model ----------
.SUBCKT DMN2050LFDB 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01936 
RS 30 3 0.001 
RG 20 2 2.08 
CGS 2 3 3.397E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 7.5E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8119 TOX = 6E-008 NSUB = 1E+016 KP = 34.81 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 3.458E-010 VJ = 0.6234 M = 0.6 
.MODEL DSUB D IS = 1.692E-009 N = 1.092 RS = 0.08289 BV = 24 CJO = 1E-015 VJ = 0.6 M = 0.7957 TT=4.3E-09
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN2050LFDB Spice Model v1.0M Last Revised 2016/3/30


*---------- DMN2400UFDQ Spice Model ----------
.SUBCKT DMN2400UFDQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.1925 
RS 30 3 0.001 
RG 20 2 68 
CGS 2 3 3.272E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 6.7E-011 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0.01  VTO = 0.9058 
+ TOX = 6E-008  NSUB = 1E+016  KP = 3.223  U0 = 400  KAPPA = 15.35 
.MODEL DCGD D  CJO = 1.94E-011  VJ = 0.1108  M = 0.3101 
.MODEL DSUB D  IS = 1E-009  N = 1.905  RS = 0.02633  BV = 25  CJO = 5.066E-012  VJ = 0.1753  M = 0.2672 
.MODEL DLIM D  IS = 0.0001 
.ENDS

*Diodes DMN2400UFDQ Spice Model v1.0 Last Revised 2018/2/1


*---------- DMN2550UFA Spice Model ----------
.SUBCKT DMN2550UFA 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.1364 
RS 30 3 0.001 
RG 20 2 393.8 
CGS 2 3 5E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.38E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7707 
+ TOX = 6E-008 NSUB = 1E+016 KP = 4.742 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 3.478E-011 VJ = 0.6 M = 0.6 
.MODEL DSUB D IS = 3.986E-010 N = 1.141 RS = 1.236 BV = 22 CJO = 1E-011 VJ = 0.6 M = 0.748 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN2550UFA Spice Model v1.0M Last Revised 2017/6/8


*---------- DMN2990UFZ Spice Model ----------
.SUBCKT DMN2990UFZ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.3366 
RS 30 3 0.001 
RG 20 2 216.8 
CGS 2 3 2.5E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 8E-011 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8158 
+ TOX = 6E-008 NSUB = 1E+016 KP = 2.327 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1E-011 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 9.72E-010 N = 1.305 RS = 1.559 BV = 22 CJO = 5E-012 VJ = 0.6 M = 0.748  
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN2990UFZ Spice Model v1.0M Last Revised 2018/2/1


*---------- DMN3010LK3 Spice Model ----------
.SUBCKT DMN3010LK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.0045 
RS 30 3 0.001 
RG 20 2 2.36 
CGS 2 3 1.952E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.4E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.358 
+ TOX = 6E-008 NSUB = 1E+016 KP = 129.3 U0 = 400 KAPPA = 4.441E-014 
.MODEL DCGD D CJO = 7.076E-010 VJ = 0.6 M = 0.4965 
.MODEL DSUB D IS = 2.322E-010 N = 1.242 RS = 0.002024 
+ BV = 35 CJO = 2.865E-010 VJ = 2.446 M = 1.359 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN3010LK3  Spice Model v1.0 Last Revised 2014/3/14


*---------- DMN3016LDN Spice Model ----------
.SUBCKT DMN3016LDN 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.007058 
RS 30 3 0.001 
RG 20 2 2.94 
CGS 2 3 1.348E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.222 
+ TOX = 6E-008 NSUB = 1E+016 KP = 121.1 U0 = 400 KAPPA = 1E-015 
.MODEL DCGD D CJO = 3.779E-010 VJ = 0.6 M = 0.4637 
.MODEL DSUB D IS = 2.322E-010 N = 1.242 RS = 0.002024 BV = 45 CJO = 1.63E-010 VJ = 0.7 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMN3016LDN Spice Model v1.0M Last Revised 2018/2/1


*---------- DMN3016LFDE Spice Model ----------
.SUBCKT DMN3016LFDE 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.007058 
RS 30 3 0.001 
RG 20 2 2.94 
CGS 2 3 1.348E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.222 
+ TOX = 6E-008 NSUB = 1E+016 KP = 121.1 U0 = 400 KAPPA = 1E-015 
.MODEL DCGD D CJO = 3.779E-010 VJ = 0.6 M = 0.4637 
.MODEL DSUB D IS = 2.322E-010 N = 1.242 RS = 0.002024 BV = 45 CJO = 1.63E-010 VJ = 0.7 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMN3016LFDE Spice Model v1.0M Last Revised 2018/2/1


*---------- DMN3016LK3 Spice Model ----------
.SUBCKT DMN3016LK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.007058 
RS 30 3 0.001 
RG 20 2 2.94 
CGS 2 3 1.348E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.222 
+ TOX = 6E-008 NSUB = 1E+016 KP = 121.1 U0 = 400 KAPPA = 1E-015 
.MODEL DCGD D CJO = 3.779E-010 VJ = 0.6 M = 0.4637 
.MODEL DSUB D IS = 2.322E-010 N = 1.242 RS = 0.002024 BV = 45 CJO = 1.63E-010 VJ = 0.7 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMN3016LK3 Spice Model v1.0M Last Revised 2018/2/1


*---------- DMN3016LPS Spice Model ----------
.SUBCKT DMN3016LPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.007058 
RS 30 3 0.001 
RG 20 2 2.94 
CGS 2 3 1.348E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.222 
+ TOX = 6E-008 NSUB = 1E+016 KP = 121.1 U0 = 400 KAPPA = 1E-015 
.MODEL DCGD D CJO = 3.779E-010 VJ = 0.6 M = 0.4637 
.MODEL DSUB D IS = 2.322E-010 N = 1.242 RS = 0.002024 BV = 45 CJO = 1.63E-010 VJ = 0.7 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMN3016LPS Spice Model v1.0M Last Revised 2018/2/1


*---------- DMN3016LSS Spice Model ----------
.SUBCKT DMN3016LSS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.007058 
RS 30 3 0.001 
RG 20 2 2.94 
CGS 2 3 1.348E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.222 
+ TOX = 6E-008 NSUB = 1E+016 KP = 121.1 U0 = 400 KAPPA = 1E-015 
.MODEL DCGD D CJO = 3.779E-010 VJ = 0.6 M = 0.4637 
.MODEL DSUB D IS = 2.322E-010 N = 1.242 RS = 0.002024 BV = 45 CJO = 1.63E-010 VJ = 0.7 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMN3016LSS Spice Model v1.0M Last Revised 2018/2/1


*---------- DMN3018SFG Spice Model ----------
.SUBCKT DMN3018SFG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.009782 
RS 30 3 0.001 
RG 20 2 1.16 
CGS 2 3 7.066E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 6.066E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.353 
+ TOX = 6E-008 NSUB = 1E+016 KP = 52.61 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 4.065E-010 VJ = 1 M = 0.9231 
.MODEL DSUB D IS = 2.251E-010 N = 1.3 RS = 0.004445 BV = 33.26 CJO = 2.225E-010 VJ = 0.1072 M = 0.284 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN3018SFG  Spice Model v1.0M Last Revised 2018/2/1


*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=21JUL2010
*VERSION=1
*------connections-------D-G-S
*
.SUBCKT DMN3024LSS 3 4 5
M1 6 20 8 8 Nmod
RG 4 2 2
RD 3 6 Rmod1 0.015
RS 8 5 Rmod1 0.005
RL 3 5 100E6
D1 5 3 Dmod1
I1 8 21 1
V1 22 21 1
RT 22 8 Rmod2 1
Et 2 20 21 8 1
Egs2 13 8 2 8 1
Eds1 14 8 3 8 1
C1 2 8 549E-12
C2 2 3  129E-12
C3 15 14 390E-12 
C4 16 8 400E-12
S1 2 15 14 13 SMOD1
S2 13 15 14 13 SMOD2
S3 16 13 13 8 SMOD3
S4 16 2 13 8 SMOD4
.MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=-0.5 VOFF=0.5
.MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=0.5 VOFF=-0.5
.MODEL SMOD3 VSWITCH RON=.001 ROFF=100  VON=-2 VOFF=-3
.MODEL SMOD4 VSWITCH RON=.001 ROFF=100  VON=-3 VOFF=-2
.MODEL Nmod NMOS (LEVEL=3  VTO=2.5 KP=35  NFS=1.33E12 KAPPA=500 TOX=30E-9  NSUB=1E16 IS=1E-15 N=10)
.MODEL Dmod1 D (IS=8.7E-14 RS=0.019 CJO=400E-12 VJ=0.6 M=0.55 TT=1e-9 TRS1=1e-4  BV=33)
.MODEL Rmod1 RES (TC1=4.3e-3 TC2=0.6E-5)
.MODEL Rmod2 RES (TC1=-4.5e-3 TC2=-6E-6)
.ENDS DMN3024LSS
*
*$


*---------- DMN3025LSS Spice Model ----------
.SUBCKT DMN3025LSS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01437 
RS 30 3 0.001 
RG 20 2 1.84 
CGS 2 3 4.55E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 4.1E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 2.222 
+ TOX = 6E-008 NSUB = 1E+017 KP = 35.61 KAPPA = 1E-015 U0 = 400 
.MODEL DCGD D CJO = 2.222E-010 VJ = 0.2975 M = 0.3378 
.MODEL DSUB D IS = 2.278E-010 N = 1.242 RS = 0.007361 
+ BV = 35 CJO = 4.795E-011 VJ = 0.3436 M = 0.5232 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMN3025LSS Spice Model v1.0 Last Revised 2018/2/1


*---------- DMN3030LFG Spice Model ----------
.SUBCKT DMN3030LFG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.005805 
RS 30 3 0.001 
RG 20 2 1.32 
CGS 2 3 6.922E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 9.2E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0.0143  VTO = 2.028 
+ TOX = 6E-008  NSUB = 1E+017  KP = 21.95  KAPPA = 105  U0 = 200 
.MODEL DCGD D  CJO = 4.611E-010  VJ = 0.3568  M = 0.4267 
.MODEL DSUB D  IS = 2.567E-010  N = 1.254  RS = 0.01257  BV = 35  CJO = 8.267E-011  VJ = 0.4558  M = 0.5515 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN3030LFG Spice Model v1.0 Last Revised 2018/2/1


*---------- DMN3032LE Spice Model ----------
.SUBCKT DMN3032LE 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.004399 
RS 30 3 0.001 
RG 20 2 2.29 
CGS 2 3 4.23E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.525 
+ TOX = 6E-008 NSUB = 1E+016 KP = 17.07 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 3.11E-010 VJ = 0.335 M = 0.5084 
.MODEL DSUB D IS = 2.451E-010 N = 1.289 RS = 0.02026 BV = 30 CJO = 1E-015 VJ = 0.1 M = 0.2257 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN3032LE Spice Model v1.0 Last Revised 2018/2/1


*---------- DMN3033LSDNQ Spice Model ----------
.SUBCKT DMN3033LSDNQ 10 20 30 
* TERMINALS: D G S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.005805 
RS 30 3 0.001 
RG 20 2 1.32 
CGS 2 3 6.922E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 9.2E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.0143 VTO = 2.028 
+ TOX = 6E-008 NSUB = 1E+017 KP = 21.95 KAPPA = 105 U0 = 200 
.MODEL DCGD D CJO = 4.611E-010 VJ = 0.3568 M = 0.4267 
.MODEL DSUB D IS = 2.567E-010 N = 1.254 RS = 0.01257 BV = 35 CJO = 8.267E-011 VJ = 0.4558 M = 0.5515 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMN3033LSDNQ Spice Model V2.0 Last Revised 2018/2/1


*---------- DMN3033LSDQ Spice Model ----------
.SUBCKT DMN3033LSDQ 10 20 30 
* TERMINALS: D G S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.005805 
RS 30 3 0.001 
RG 20 2 1.32 
CGS 2 3 6.922E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 9.2E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.0143 VTO = 2.028 
+ TOX = 6E-008 NSUB = 1E+017 KP = 21.95 KAPPA = 105 U0 = 200 
.MODEL DCGD D CJO = 4.611E-010 VJ = 0.3568 M = 0.4267 
.MODEL DSUB D IS = 2.567E-010 N = 1.254 RS = 0.01257 BV = 35 CJO = 8.267E-011 VJ = 0.4558 M = 0.5515 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMN3033LSDQ Spice Model V2.0 Last Revised 2018/2/1


*---------- DMN3042L Spice Model ----------
.SUBCKT DMN3042L 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01631 
RS 30 3 0.001 
RG 20 2 3.19 
CGS 2 3 5.244E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 6.7E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.053 
+ TOX = 6E-008 NSUB = 1E+016 KP = 44.07 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 3.121E-010 VJ = 0.7018 M = 0.6 
.MODEL DSUB D IS = 1.011E-009 N = 1.157 RS = 0.0244 BV = 36 CJO = 2.1E-010 VJ = 0.7682 M = 0.6 TT=3.9E-09
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN3042L Spice Model v1.0M Last Revised 2018/2/1


*---------- DMN3730UFB Spice Model ----------
.SUBCKT DMN3730UFB 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.254 
RS 30 3 0.001 
RG 20 2 64.1 
CGS 2 3 6.303E-011 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.3E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8482 
+ TOX = 6E-008 NSUB = 1E+016 KP = 6.297 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 2.864E-011 VJ = 0.6391 M = 0.6 
.MODEL DSUB D IS = 1.379E-008 N = 1.49 RS = 0.3453 BV = 34 CJO = 7E-012 VJ = 0.6 M = 0.7813 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN3730UFB Spice Model v1.0M Last Revised 2018/2/1


*---------- DMN4010LK3 Spice Model ----------
.SUBCKT DMN4010LK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.005483 
RS 30 3 0.001 
RG 20 2 1.64 
CGS 2 3 1.736E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.58E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 2.274
+ TOX = 6E-008 NSUB = 1E+017 KP = 95.33 KAPPA = 24.52 U0 = 400 
.MODEL DCGD D CJO = 8.624E-010 VJ = 0.3663 M = 0.4967 
.MODEL DSUB D IS = 2.495E-010 N = 1.227 RS = 0.003519 
+ BV = 45 CJO = 7.592E-010 VJ = 0.3012 M = 0.5211 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN4010LK3  Spice Model v1.0 Last Revised 2018/2/1


*---------- DMN4031SSDQ Spice Model ----------
.SUBCKT DMN4031SSDQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.001 
RS 30 3 0.009995 
RG 20 2 1.56 
CGS 2 3 8.311E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 9.4E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 1E+006  ETA = 0.001  VTO = 3.195 
+ TOX = 6E-008  NSUB = 1E+016  KP = 26.57  U0 = 400  KAPPA = 32.33 
.MODEL DCGD D  CJO = 3.144E-010  VJ = 0.09587  M = 0.3239 
.MODEL DSUB D  IS = 1.133E-011  N = 1.136  RS = 1.044E-015  BV = 40  CJO = 1.281E-010  VJ = 0.3722  M = 0.5383 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN4031SSDQ Spice Model v1.0 Last Revised 2018/2/1


*---------- DMN4800LSSL Spice Model ----------
.SUBCKT DMN4800LSSL 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.00609 
RS 30 3 0.001002 
RG 20 2 1.37 
CGS 2 3 6.734E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 7E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8E+005  ETA = 0.0001  VTO = 1.515 
+ TOX = 6.045E-008  NSUB = 3.203E+015  KP = 26.14  KAPPA = 26.53  U0 = 400 
.MODEL DCGD D  CJO = 5.334E-010  VJ = 0.3477  M = 0.4238 
.MODEL DSUB D  IS = 2.647E-009  N = 1.306  RS = 0.01224  BV = 35  CJO = 5.333E-011  VJ = 0.6305  M = 0.8 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN4800LSSL Spice Model v1.0M Last Revised 2018/2/1


*DIODES_INC_SPICE_MODEL DMN6066SSD N-channel MOSFET
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=29Nov2011
*VERSION=1

.SUBCKT DMN6066 10 20 30
M1 1 2 3 3  Nmod1
RD 10 1 Rmod1 27E-3
RS 23 3 Rmod1 27E-3
RG 20 22 1.5
RIN 20 23 2E11
RDS 10 23 6E9
CGS 2 3 420E-12 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 420E-12 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 23 10  DSUB
EL 2 22 1 3 0.0015
LS  30 23  3n
.MODEL Nmod1 NMOS (LEVEL=3 VTO=3.2 TOX=6E-8 NSUB=3E+17 KP=140 NFS=8E+11 IS=1E-15 N=10)
.MODEL DCGD D (CJO = 220E-12  VJ = 0.5  M = 0.43)
.MODEL DSUB D (IS = .1E-10 N=1.1 RS=0.02 BV=66 CJO=330E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=2E-3)
.MODEL DLIM D (IS=100U N=1)
.MODEL Rmod1 RES (TC1=2e-3 TC2=6E-6)
.ENDS

.SIMULATOR DEFAULT


*DIODES_INC_SPICE_MODEL DMN6068LK3 N-channel MOSFET
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=21Dec2011
*VERSION=1
*PINS 10=D 20=G 30=S

.SUBCKT DMN6068 10 20 30
M1 1 2 3 3  Nmod1
RD 10 1 Rmod1 27E-3
RS 23 3 Rmod1 27E-3
RG 20 22 1.5
RIN 20 23 2E11
RDS 10 23 6E9
CGS 2 3 380E-12 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 426E-12 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 23 10  DSUB
EL 2 22 1 3 0.0015
LS  30 23 2n
.MODEL Nmod1 NMOS (LEVEL=3 VTO=3.4 TOX=6E-8 NSUB=2.8E+17 KP=155 NFS=8E+11 IS=1E-15 N=10)
.MODEL DCGD D (CJO = 244E-12  VJ = 0.5  M = 0.43 T_ABS=25)
.MODEL DSUB D (IS = .1E-10 N=1.1 RS=0.02 BV=66 CJO=330E-12 VJ=0.42 M=0.5 TT=145E-9 TRS1=2E-3)
.MODEL DLIM D (IS=100U N=1 T_ABS=25)
.MODEL Rmod1 RES (TC1=2e-3 TC2=6E-6)
.ENDS


*---------- DMN6069SE Spice Model ----------
.SUBCKT DMN6069SE 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.03539 
RS 30 3 1E-008 
RG 20 2 2.16 
CGS 2 3 7.47E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5.1E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.641 
+ TOX = 6E-008 NSUB = 1E+016 KP = 36.47 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 2.225E-010 VJ = 0.3984 M = 0.4935 
.MODEL DSUB D IS = 2.365E-010 N = 1.257 RS = 0.006622 BV = 72 CJO = 2.225E-010 VJ = 0.1191 M = 0.564 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN6069SE  Spice Model v1.0 Last Revised 2015/8/03


*---------- DMN6070SFCL Spice Model ----------

.SUBCKT DMN6070SFCL 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.04411 
RS 30 3 0.001 
RG 20 2 1.31 
CGS 2 3 7.136E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 3.4E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.463 
+ TOX = 6E-008 NSUB = 1E+016 KP = 15.76 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.389E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.333E-010 N = 1.31 RS = 0.01036 BV = 60 CJO = 8.659E-011 VJ = 0.706 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMN6070SFCL Spice Model v1.0M Last Revised 2018/2/1



*---------- DMN6070SSD Spice Model ----------

.SUBCKT DMN6070SSD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.04411 
RS 30 3 0.001 
RG 20 2 1.31 
CGS 2 3 7.136E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 3.4E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.463 
+ TOX = 6E-008 NSUB = 1E+016 KP = 15.76 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.389E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.333E-010 N = 1.31 RS = 0.01036 BV = 60 CJO = 8.659E-011 VJ = 0.706 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMN6070SSD Spice Model v1.0M Last Revised 2018/2/1


*---------- DMN6140LQ Spice Model ----------
.SUBCKT DMN6140LQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.06658 
RS 30 3 0.001 
RG 20 2 0.65 
CGS 2 3 3.184E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 4.4E-010 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 5.378E+005  ETA = 0.001 
+ VTO = 1.88  TOX = 6E-008  NSUB = 1E+016  KP = 5.783  U0 = 400  KAPPA = 10 
.MODEL DCGD D  CJO = 1.846E-010  VJ = 0.6  M = 0.6135 
.MODEL DSUB D  IS = 2.247E-010  N = 1.308  RS = 0.02648  BV = 65  CJO = 6.828E-012  VJ = 0.7  M = 0.6 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMN6140LQ Spice Model v1.0 Last Revised 2018/2/1


*---------- DMN7022LFG Spice Model ----------
.SUBCKT DMN7022LFG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01229 
RS 30 3 0.001 
RG 20 2 0.89 
CGS 2 3 2.958E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.2E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.283 
+ TOX = 6E-008 NSUB = 1E+016 KP = 108.2 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 9.098E-010 VJ = 0.6685 M = 0.6 
.MODEL DSUB D IS = 2.356E-010 N = 1.236 RS = 0.001642 BV = 84 CJO = 4.014E-010 VJ = 0.6 M = 0.6031 TT=1.3E-08 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN7022LFG Spice Model v1.0M Last Revised 2018/2/1



*---------- DMNH10H028SK3 Spice Model ----------
.SUBCKT DMNH10H028SK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.02115 
RS 30 3 1E-008 
RG 20 2 1.82 
CGS 2 3 2.134E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 8E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.675 
+ TOX = 6E-008 NSUB = 1E+016 KP = 72.57 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 4.731E-010 VJ = 1 M = 0.9082 
.MODEL DSUB D IS = 2.476E-010 N = 1.172 RS = 0.003739 BV = 119 CJO = 2.226E-009 VJ = 1 M = 0.9133 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMNH10H028SK3  Spice Model v1.0 Last Revised 2018/2/1


*---------- DMNH10H028SPS Spice Model ----------
.SUBCKT DMNH10H028SPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.02115 
RS 30 3 1E-008 
RG 20 2 1.82 
CGS 2 3 2.134E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 8E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.675 
+ TOX = 6E-008 NSUB = 1E+016 KP = 72.57 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 4.731E-010 VJ = 1 M = 0.9082 
.MODEL DSUB D IS = 2.476E-010 N = 1.172 RS = 0.003739 BV = 119 CJO = 2.226E-009 VJ = 1 M = 0.9133 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMNH10H028SPS  Spice Model v1.0 Last Revised 2018/2/1


*---------- DMNH4005SPS Spice Model ----------
.SUBCKT DMNH4005SPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001 
RS 30 3 0.001 
RG 20 2 1.66 
CGS 2 3 2.804E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.37 
+ TOX = 6E-008 NSUB = 1E+016 KP = 102.4 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 8E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.268E-010 N = 1.123 RS = 0.0001872 BV = 51 CJO = 3E-009 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMNH4005SPS Spice Model v1.0M Last Revised 2018/2/1


*---------- DMNH6008SPS Spice Model ----------
.SUBCKT DMNH6008SPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001343 
RS 30 3 0.001 
RG 20 2 1.35 
CGS 2 3 2.757E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.209 
+ TOX = 6E-008 NSUB = 1E+016 KP = 43.04 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 4.614E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.22E-010 N = 1.156 RS = 4.441E-010 BV = 68 CJO = 2E-009 VJ = 0.8 M = 0.6 TT=1.6E-08
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMNH6008SPS Spice Model v1.0M Last Revised 2018/2/1


*---------- DMT6008LFG Spice Model ----------
.SUBCKT DMT6008LFG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001564 
RS 30 3 0.001 
RG 20 2 0.72 
CGS 2 3 2.16E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.05E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 
+ DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.01616 VTO = 1.663 
+ TOX = 6E-008 NSUB = 1E+016 KP = 72.59 U0 = 400 KAPPA = 4.441E-011 
.MODEL DCGD D CJO = 4.802E-010 VJ = 3.157 M = 1.442 
.MODEL DSUB D IS = 3.784E-010 N = 1.165 RS = 0.004441 
+ BV = 65 CJO = 1.266E-009 VJ = 17.3 M = 0.9348 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMNT6008LFG Spice Model v1.0 Last Revised 2013/10/31


*---------- DMP10H400SE Spice Model ----------
.SUBCKT DMP10H400SE 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.1739 
RS 30 3 0.001 
RG 20 2 12.5 
CGS 2 3 1.213E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 4E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 
+ TOX = 6E-008 NSUB = 1E+016 KP = 12.42 KAPPA = 61.41 VTO = -2.193 
.MODEL DCGD D CJO = 9.262E-011 VJ = 0.7916 M = 0.3376 
.MODEL DSUB D IS = 3.112E-009 N = 1.487 RS = 0.008305 BV = 150 
+ CJO = 1.637E-010 VJ = 0.753 M = 0.6004 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP10H400SE Spice Model v1.0 Last Revised 2018/2/1


*---------- DMP31D0U Spice Model ----------
.SUBCKT DMP31D0U 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.3953 
RS 30 3 0.001 
RG 20 2 166 
CGS 2 3 7.126E-011 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 8E-011 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 3.955 KAPPA = 0.2552 VTO = -0.6755 
.MODEL DCGD D CJO = 3.218E-011 VJ = 0.07451 M = 0.3033 
.MODEL DSUB D IS = 1.621E-008 N = 1.532 RS = 0.5477 
+ BV = 95.86 CJO = 1.035E-011 VJ = 0.0002124 M = 0.1217 
.MODEL DLIM D IS = 0.0001 
.MODEL DESD D IS = 1.137E-005 N = 1.184E+004 BV = 4.441E-010 
.ENDS
*Diodes DMP31D0U Spice Model v1.0 Last Revised 2018/2/1


*---------- DMP32D4SFB Spice Model ----------
.SUBCKT DMP32D4SFB 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.2489 
RS 30 3 0.001 
RG 20 2 6.2 
DESD1 2 5 DESD 
DESD2 3 5 DESD 
CGS 2 3 4.241E-011 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 7E-011 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 
+ ETA = 0.001 TOX = 6E-008 NSUB = 1E+016 KP = 0.9475 
+ KAPPA = 4.451E-013 VTO = -2.03 
.MODEL DCGD D CJO = 4.722E-011 VJ = 0.002858 M = 0.1852 
.MODEL DSUB D IS = 2.27E-010 N = 1.611 RS = 0.3594 BV = 95.86 CJO = 4.168E-012 
+ VJ = 2.307E-006 M = 0.05063 
.MODEL DLIM D IS = 0.0001 
.MODEL DESD D IS = 1.845E-008 N = 59.86 BV = 2.273 
.ENDS
*Diodes DMP32D4SFB Spice Model v1.0 Last Revised 2018/2/1


*---------- DMP32D5LFA Spice Model ----------
.SUBCKT DMP32D5LFA 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.2549 
RS 30 3 1E-006 
RG 20 2 237 
CGS 2 3 4.266E-011 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 8E-011 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1E+006  ETA = 0.001 
+ TOX = 6E-008  NSUB = 1E+016  KP = 1.323  KAPPA = 49.86  VTO = -2 
.MODEL DCGD D  CJO = 2.35E-011  VJ = 0.8  M = 0.3265 
.MODEL DSUB D  IS = 2.271E-010  N = 1.582  RS = 0.2191  BV = 50  CJO = 7.829E-012  VJ = 0.7644  M = 0.6 
.MODEL DLIM D  IS = 0.0001 
.ENDS

*Diodes DMP32D5LFA Spice Model v1.0 Last Revised 2018/2/1


*---------- DMP58D0LFB Spice Model ----------
.SUBCKT DMP58D0LFB 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 4.315 
RS 30 3 0.001 
RG 20 2 150 
CGS 2 3 2.573E-011 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 1E-010 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 800  VMAX = 4.005E+005  KP = 0.1511  ETA = 0.01292  
+VTO = -1.594  TOX = 6E-008  NSUB = 1E+015  KAPPA = 1E-015 
.MODEL DCGD D  CJO = 4.271E-012  VJ = 0.07778  M = 0.1905 
.MODEL DSUB D  IS = 3.174E-009  N = 1.911  RS = 0.1816  BV = 55  CJO = 1.083E-011  VJ = 0.5802  M = 0.3745 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMP58D0LFB Spice Model v1.0 Last Revised 2011/1/18


*---------- DMP1045U Spice Model ----------
.SUBCKT DMP1045U 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01808 
RS 30 3 0.001 
RG 20 2 13.4 
CGS 2 3 1.058E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 9.1E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 35.11 KAPPA = 19.32 VTO = -0.7328 
.MODEL DCGD D CJO = 1E-009 VJ = 0.587 M = 0.4707 
.MODEL DSUB D IS = 1.513E-008 N = 1.192 RS = 0.09064 
+ BV = 40 CJO = 1.315E-010 VJ = 0.6767 M = 0.9842 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP1045U Spice Model v1.0 Last Revised 2018/2/1


*---------- DMP1055UFDB Spice Model ----------

.SUBCKT DMP1055UFDB 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.03274 
RS 30 3 0.001 
RG 20 2 4.88 
CGS 2 3 7.966E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 9.5E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 22.87 KAPPA = 19.32 VTO = -0.844 
.MODEL DCGD D CJO = 8.091E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 1.135E-008 N = 1.287 RS = 0.07544 BV = 20 CJO = 1.739E-010 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP1055UFDB Spice Model v1.0M Last Revised 2018/2/1


*---------- DMP2010UFG Spice Model ----------
.SUBCKT DMP2010UFG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.004509 
RS 30 3 0.001 
RG 20 2 10.72 
CGS 2 3 3.102E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 6.3E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 192.6 KAPPA = 19.32 VTO = -1.259 
.MODEL DCGD D CJO = 3E-009 VJ = 0.2228 M = 0.4828 
.MODEL DSUB D IS = 2.281E-009 N = 1.168 RS = 0.007325 BV = 25 CJO = 1E-009 VJ = 0.1694 M = 0.6632 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP2010UFG Spice Model v1.0 Last Revised 2018/2/1


*---------- DMP2035UVT Spice Model ----------
.SUBCKT DMP2035UVT 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01433 
RS 30 3 0.001 
RG 20 2 11.12 
CGS 2 3 1.682E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1.58E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 56.81 KAPPA = 19.32 VTO = -0.8663 
.MODEL DCGD D CJO = 9.774E-010 VJ = 0.6 M = 0.6 
.MODEL DSUB D IS = 9.271E-009 N = 1.204 RS = 0.03691 BV = 20 CJO = 6.425E-011 VJ = 0.6 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP2035UVT Spice Model v1.0 Last Revised 2018/2/1


*---------- DMP2066LVT Spice Model ----------
.SUBCKT DMP2066LVT 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.02066 
RS 30 3 0.001 
RG 20 2 10.4 
CGS 2 3 1.463E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 1.36E-009 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1E+006  ETA = 0.001 
+ TOX = 6E-008  NSUB = 1E+016  KP = 42.59  KAPPA = 49.86  VTO = -0.9435 
.MODEL DCGD D  CJO = 5.044E-010  VJ = 0.2  M = 0.3439 
.MODEL DSUB D  IS = 1E-006  N = 1.73  RS = 0.08493  BV = 25  CJO = 9.596E-011  VJ = 0.2  M = 0.4531 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMP2066LVT Spice Model v1.0 Last Revised 2018/2/1


*---------- DMP2100UFU Spice Model ----------
.SUBCKT DMP2100UFU 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01885 
RS 30 3 0.001 
RG 20 2 259 
CGS 2 3 8.967E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1.18E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 20.27 KAPPA = 19.32 VTO = -0.5 
.MODEL DCGD D CJO = 8.447E-011 VJ = 0.3714 M = 0.3197 
.MODEL DSUB D IS = 5.083E-010 N = 1.362 RS = 0.02549 BV = 25 CJO = 2.887E-010 VJ = 0.2487 M = 0.4372 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP2100UFU Spice Model v1.0 Last Revised 2015/7/2


*SRC=DMP2123L;DI_DMP2123L;MOSFETs P;Enh;20.0V 3.00A 0.123ohms  Diodes Inc MOSFET
*SYM=POWMOSP
.SUBCKT DI_DMP2123L   10 20 30
*     TERMINALS:  D  G  S
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  57.4m
RS  40  3  4.07m
RG  20  2  50.0
CGS  2  3  342p
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  966p
R1  13  0  1.00
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1.00
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.50n
.MODEL DMOS PMOS(LEVEL=3 VMAX=41.7k THETA=80.0m
+ ETA=1.80m VTO=-1.25 KP=44.2
.MODEL DCGD D (CJO=966p VJ=0.600 M=0.680
.MODEL DSUB D (IS=12.5n N=1.50 RS=0.170 BV=20.0
+ CJO=230p VJ=0.800 M=0.420 TT=196n
.MODEL DLIM D (IS=100U)
.ENDS


*---------- DMP2160UFDBQ Spice Model ----------
.SUBCKT DMP2160UFDBQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.06732 
RS 30 3 0.001 
RG 20 2 44.9 
CGS 2 3 5.341E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 6.75E-010 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1.391E+005  KP = 20.82  ETA = 0.005556 
+ TOX = 6E-008  NSUB = 1E+016  KAPPA = 0.5405  VTO = -0.9485 
.MODEL DCGD D  CJO = 3.766E-010  VJ = 0.2194  M = 0.4355 
.MODEL DSUB D  IS = 8.7E-009  N = 1.353  RS = 0.08758  BV = 25  CJO = 1E-012  VJ = 0.3188  M = 0.5753 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMP2160UFDBQ Spice Model v1.0 Last Revised 2018/2/1


*---------- DMP2240UWQ Spice Model ----------
.SUBCKT DMP2240UWQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.04586 
RS 30 3 0.001 
RG 20 2 72 
CGS 2 3 5.078E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 7.9E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 14.56 KAPPA = 1 VTO = -0.75 
.MODEL DCGD D CJO = 3.371E-010 VJ = 0.226 M = 0.4329 
.MODEL DSUB D IS = 1.334E-008 N = 1.338 RS = 0.1868 BV = 25 
+ CJO = 3.296E-011 VJ = 0.3087 M = 0.4639 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMP2240UWQ Spice Model v1.0 Last Revised 2018/2/1


*---------- DMP2305UVT Spice Model ----------
.SUBCKT DMP2305UVT 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.03653 
RS 30 3 0.001 
RG 20 2 23 
CGS 2 3 6.954E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 8.85E-010 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1.385E+005  ETA = 0.001 
+ TOX = 6E-008  NSUB = 1E+016  KP = 24.44  KAPPA = 0.8442  VTO = -0.8978 
.MODEL DCGD D  CJO = 3.468E-010  VJ = 0.2064  M = 0.3945 
.MODEL DSUB D  IS = 4.536E-009  N = 1.339  RS = 0.05752  BV = 30  CJO = 2.406E-011  VJ = 1.677E-012  M = 0.8 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMP2305UVT  Spice Model v1.0 Last Revised 2018/2/1


*---------- DMP3008SFG Spice Model ----------
.SUBCKT DMP3008SFG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.008417 
RS 30 3 0.001 
RG 20 2 6.37 
CGS 2 3 2.09E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 2.2E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 38.15 KAPPA = 19.32 VTO = -2.025 
.MODEL DCGD D CJO = 1E-009 VJ = 0.8  M = 0.6 
.MODEL DSUB D IS = 2.251E-010 N = 1.261 RS = 0.007736 BV = 33 CJO = 1.038E-010 VJ = 0.8 M = 0.6  
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP3008SFG Spice Model v1.0M Last Revised 2018/1/25


*---------- DMP3008SFGQ Spice Model ----------
.SUBCKT DMP3008SFGQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.008417 
RS 30 3 0.001 
RG 20 2 6.37 
CGS 2 3 2.09E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 2.2E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 38.15 KAPPA = 19.32 VTO = -2.025 
.MODEL DCGD D CJO = 1E-009 VJ = 0.8  M = 0.6 
.MODEL DSUB D IS = 2.251E-010 N = 1.261 RS = 0.007736 BV = 33 CJO = 1.038E-010 VJ = 0.8 M = 0.6  
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP3008SFGQ Spice Model v1.0M Last Revised 2018/1/25


*---------- DMP3010LK3 Spice Model ----------
.SUBCKT DMP3010LK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.002936 
RS 30 3 0.001 
RG 20 2 1.28 
CGS 2 3 5.724E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 4E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 
+ TOX = 6E-008 NSUB = 1E+016 KP = 118.4 KAPPA = 64.79 VTO = -1.906 
.MODEL DCGD D CJO = 2.87E-009 VJ = 0.3337 M = 0.3427 
.MODEL DSUB D IS = 2.26E-010 N = 1.19 RS = 0.002225 
+ BV = 40 CJO = 1.506E-009 VJ = 0.09737 M = 0.2275 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP3010LK3 Spice Model v1.0 Last Revised 2018/2/1


*---------- DMP3010LPSQ Spice Model ----------
.SUBCKT DMP3010LPSQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.002936 
RS 30 3 0.001 
RG 20 2 1.28 
CGS 2 3 5.724E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 4E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 
+ TOX = 6E-008 NSUB = 1E+016 KP = 118.4 KAPPA = 64.79 VTO = -1.906 
.MODEL DCGD D CJO = 2.87E-009 VJ = 0.3337 M = 0.3427 
.MODEL DSUB D IS = 2.26E-010 N = 1.19 RS = 0.002225 
+ BV = 40 CJO = 1.506E-009 VJ = 0.09737 M = 0.2275 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP3010LPSQ Spice Model v1.0 Last Revised 2018/2/1


*---------- DM3013SFV Spice Model ----------
.SUBCKT DMP3013SFV 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.005437 
RS 30 3 0.001 
RG 20 2 15.2 
CGS 2 3 1.536E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1.5E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 81.78 KAPPA = 19.32 VTO = -2.222 
.MODEL DCGD D CJO = 7E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 5.656E-011 N = 1.14 RS = 1.587 BV = 32 CJO = 7.357E-010 VJ = 0.8 M = 0.6 TT = 2.3E-008 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP3013SFV Spice Model v1.0M Last Revised 2017/11/27


*---------- DMP3015LSSQ Spice Model ----------
.SUBCKT DMP3015LSSQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.005144 
RS 30 3 0.001 
RG 20 2 2 
CGS 2 3 2.486E-009 
EGD 12 0 1 2 1 
VFB 14 0 0 
FFB 1 2  VFB 1 
CGD 13 14 2.95E-009 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 610.4  VMAX = 1E+006  KP = 57.85  ETA = 0.01628 
+ TOX = 6E-008  NSUB = 1E+017  KAPPA = 20.51  VTO = -2.177 
.MODEL DCGD D  CJO = 1.305E-009  VJ = 0.3167  M = 0.312 
.MODEL DSUB D  IS = 2.366E-010  N = 1.216  RS = 0.002639  BV = 35  CJO = 8.298E-011  VJ = 0.6  M = 0.0929 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMP3015LSSQ Spice Model v1.2 Last Revised 2018/2/1


*---------- DMP3017SFK Spice Model ----------
.SUBCKT DMP3017SFK 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.005039 
RS 30 3 0.001 
RG 20 2 8.36 
CGS 2 3 1.93E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 1.6E-009 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 400  VMAX = 1E+006  ETA = 0.001 
+ TOX = 6E-008  NSUB = 1E+016  KP = 46.32  KAPPA = 49.86  VTO = -2.2 
.MODEL DCGD D  CJO = 1.115E-009  VJ = 0.6515  M = 0.3641 
.MODEL DSUB D  IS = 4.862E-012  N = 1.048  RS = 0.005212  BV = 50  CJO = 7.568E-011  VJ = 0.8  M = 0.6 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMP3017SFK Spice Model v1.0 Last Revised 2018/2/1


*---------- DM3018SFK Spice Model ----------
.SUBCKT DMP3018SFK 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.005131 
RS 30 3 0.001 
RG 20 2 14.2 
CGS 2 3 1.876E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 2.5E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 42.07 KAPPA = 19.32 VTO = -2.783 
.MODEL DCGD D CJO = 1.4E-009 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.674E-010 N = 1.26 RS = 0.0008951 BV = 33 CJO = 8E-010 VJ = 0.6358 M = 0.6 TT = 1.07E-008 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP3018SFK Spice Model v1.0M Last Revised 2017/11/27


*---------- DMP3026SFDE Spice Model ----------
.SUBCKT DMP3026SFDE 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.009697 
RS 30 3 0.001 
RG 20 2 15.56 
CGS 2 3 1.185E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 6.5E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 21.21 KAPPA = 19.32 VTO = -2.826 
.MODEL DCGD D CJO = 2.5E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.381E-010 N = 1.297 RS = 0.003867 BV = 38 CJO = 2.5E-010 VJ = 0.8 M = 0.6 TT = 5.11E-009 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP3026SFDE Spice Model v1.0M Last Revised 2018/2/1


*---------- DMP3028LK3 Spice Model ----------
.SUBCKT DMP3028LK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01205 
RS 30 3 0.001 
RG 20 2 14.8 
CGS 2 3 1.141E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 8E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 1E-009 
+ TOX = 6E-008 NSUB = 1E+016 KP = 24.29 KAPPA = 55.87 VTO = -2.147 
.MODEL DCGD D CJO = 4.573E-010 VJ = 0.4119 M = 0.3922 
.MODEL DSUB D IS = 2.24E-010 N = 1.262 RS = 0.009108 
+ BV = 50 CJO = 2.261E-010 VJ = 0.5048 M = 0.5435 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP3028LK3 Spice Model v1.0 Last Revised 2018/2/1


*---------- DMP3028LSD Spice Model ----------
.SUBCKT DMP3028LSD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.01205 
RS 30 3 0.001 
RG 20 2 14.8 
CGS 2 3 1.141E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 8E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 1E-009 
+ TOX = 6E-008 NSUB = 1E+016 KP = 24.29 KAPPA = 55.87 VTO = -2.147 
.MODEL DCGD D CJO = 4.573E-010 VJ = 0.4119 M = 0.3922 
.MODEL DSUB D IS = 2.24E-010 N = 1.262 RS = 0.009108 
+ BV = 50 CJO = 2.261E-010 VJ = 0.5048 M = 0.5435 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP3028LSD Spice Model v1.0 Last Revised 2018/2/1


*SRC=DMP3035LSS;DI_DMP3035LSS;MOSFETs P;Enh;30.0V 12.0A 35.0mohms  Diodes Inc MOSFET
*SYM=POWMOSP
.SUBCKT DI_DMP3035LSS   10 20 30
*     TERMINALS:  D  G  S
M1   1  2  3  3  DMOS L=1U W=1U
RD  10  1  15.6m
RS  40  3  1.87m
RG  20  2  76.7
CGS  2  3  179p
EGD 12  0  2  1  1
VFB 14  0  0
FFB  2  1  VFB  1
CGD 13 14  347p
R1  13  0  1.00
D1  12 13  DLIM
DDG 15 14  DCGD
R2  12 15  1.00
D2  15  0  DLIM
DSD  3 10  DSUB
LS  30 40  7.50n
.MODEL DMOS PMOS(LEVEL=3 VMAX=62.5k THETA=80.0m
+ ETA=450u VTO=-2.00 KP=23.3
.MODEL DCGD D (CJO=347p VJ=0.600 M=0.680
.MODEL DSUB D (IS=49.8n N=1.50 RS=29.2m BV=30.0
+ CJO=92.5p VJ=0.800 M=0.420 TT=196n
.MODEL DLIM D (IS=100U)
.ENDS


*---------- DMP3036SFG Spice Model ----------
.SUBCKT DMP3036SFG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.01231 
RS 30 3 0.001 
RG 20 2 6.83 
CGS 2 3 1.465E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 1.556E-009 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 164.9  VMAX = 1.945E+005  KP = 39.94 
+ ETA = 0.005129  TOX = 6E-008  NSUB = 1.104E+016  KAPPA = 3.689  VTO = -2.072 
.MODEL DCGD D  CJO = 7.47E-010  VJ = 0.518  M = 0.3662 
.MODEL DSUB D  IS = 2.364E-010  N = 1.296  RS = 0.007836  BV = 33  
+CJO = 9.148E-011  VJ = 0.644  M = 0.663 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMP3036SFG Spice Model v1.0 Last Revised 2017/7/27


*---------- DMP3036SFV Spice Model ----------
.SUBCKT DMP3036SFV 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.01231 
RS 30 3 0.001 
RG 20 2 6.83 
CGS 2 3 1.465E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 1.556E-009 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 164.9  VMAX = 1.945E+005  KP = 39.94 
+ ETA = 0.005129  TOX = 6E-008  NSUB = 1.104E+016  KAPPA = 3.689  VTO = -2.072 
.MODEL DCGD D  CJO = 7.47E-010  VJ = 0.518  M = 0.3662 
.MODEL DSUB D  IS = 2.364E-010  N = 1.296  RS = 0.007836  BV = 33  
+CJO = 9.148E-011  VJ = 0.644  M = 0.663 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMP3036SFV Spice Model v1.0 Last Revised 2017/7/27


*---------- DMP3036SSD Spice Model ----------
.SUBCKT DMP3036SSD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.01231 
RS 30 3 0.001 
RG 20 2 6.83 
CGS 2 3 1.465E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 1.556E-009 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 164.9  VMAX = 1.945E+005  KP = 39.94 
+ ETA = 0.005129  TOX = 6E-008  NSUB = 1.104E+016  KAPPA = 3.689  VTO = -2.072 
.MODEL DCGD D  CJO = 7.47E-010  VJ = 0.518  M = 0.3662 
.MODEL DSUB D  IS = 2.364E-010  N = 1.296  RS = 0.007836  BV = 33  
+CJO = 9.148E-011  VJ = 0.644  M = 0.663 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMP3036SSD Spice Model v1.0 Last Revised 2017/7/27


*---------- DMP3036SSS Spice Model ----------
.SUBCKT DMP3036SSS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  PMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.01231 
RS 30 3 0.001 
RG 20 2 6.83 
CGS 2 3 1.465E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1  VFB 1 
CGD 13 14 1.556E-009 
R1 13 30 1 
D1 13 12  DLIM 
DDG 14 15  DCGD 
R2 12 15 1 
D2 30 15  DLIM 
DSD 10 3  DSUB 
.MODEL PMOS PMOS  LEVEL = 3  U0 = 164.9  VMAX = 1.945E+005  KP = 39.94 
+ ETA = 0.005129  TOX = 6E-008  NSUB = 1.104E+016  KAPPA = 3.689  VTO = -2.072 
.MODEL DCGD D  CJO = 7.47E-010  VJ = 0.518  M = 0.3662 
.MODEL DSUB D  IS = 2.364E-010  N = 1.296  RS = 0.007836  BV = 33  
+CJO = 9.148E-011  VJ = 0.644  M = 0.663 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMP3036SSS Spice Model v1.0 Last Revised 2017/7/27


*---------- DMP4025LK3 Spice Model ----------
.SUBCKT DMP4025LK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.006043 
RS 30 3 0.001 
RG 20 2 6.43 
CGS 2 3 1.554E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1.4E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 
+ TOX = 6E-008 NSUB = 1E+016 KP = 11.66 KAPPA = 9.057 VTO = -1.385 
.MODEL DCGD D CJO = 5.62E-010 VJ = 0.6 M = 0.4221 
.MODEL DSUB D IS = 4.586E-010 N = 1.275 RS = 0.01773 
+ BV = 50 CJO = 2.892E-010 VJ = 0.0947 M = 0.3174 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP4025LK3 Spice Model v1.0 Last Revised 2018/2/1


*---------- DMP4025LSD Spice Model ----------
.SUBCKT DMP4025LSD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.006043 
RS 30 3 0.001 
RG 20 2 6.43 
CGS 2 3 1.554E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1.4E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 
+ TOX = 6E-008 NSUB = 1E+016 KP = 11.66 KAPPA = 9.057 VTO = -1.385 
.MODEL DCGD D CJO = 5.62E-010 VJ = 0.6 M = 0.4221 
.MODEL DSUB D IS = 4.586E-010 N = 1.275 RS = 0.01773 
+ BV = 50 CJO = 2.892E-010 VJ = 0.0947 M = 0.3174 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP4025LSD Spice Model v1.0 Last Revised 2018/2/1


*---------- DMP4025LSS Spice Model ----------
.SUBCKT DMP4025LSS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.006043 
RS 30 3 0.001 
RG 20 2 6.43 
CGS 2 3 1.554E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1.4E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 
+ TOX = 6E-008 NSUB = 1E+016 KP = 11.66 KAPPA = 9.057 VTO = -1.385 
.MODEL DCGD D CJO = 5.62E-010 VJ = 0.6 M = 0.4221 
.MODEL DSUB D IS = 4.586E-010 N = 1.275 RS = 0.01773 
+ BV = 50 CJO = 2.892E-010 VJ = 0.0947 M = 0.3174 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP4025LSS Spice Model v1.0 Last Revised 2018/2/1


*---------- DMP4065S Spice Model ----------
.SUBCKT DMP4065S 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.04289 
RS 30 3 0.001 
RG 20 2 10.24 
CGS 2 3 5.75E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 4.5E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 8.015 KAPPA = 19.32 VTO = -1.585 
.MODEL DCGD D CJO = 1.7E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.364E-010 N = 1.26 RS = 0.0254 BV = 46 CJO = 2.226E-010 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP4065S Spice Model v1.0M Last Revised 2018/2/1


*---------- DMP6050SFG Spice Model ----------
.SUBCKT DMP6050SFG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.02655 
RS 30 3 0.001 
RG 20 2 15.97 
CGS 2 3 1.62E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 1.25E-009 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 25.05 KAPPA = 19.32 VTO = -2.321 
.MODEL DCGD D CJO = 3.1E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.351E-010 N = 1.253 RS = 0.006785 BV = 69 CJO = 2.217E-010 VJ = 0.8 M = 0.6 TT=7.59E-09
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP6050SFG Spice Model v1.0M Last Revised 2018/2/1


*---------- DMP6110SSD Spice Model ----------
.SUBCKT DMP6110SSD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.04464 
RS 30 3 0.001 
RG 20 2 13 
CGS 2 3 1E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 6.5E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 
+ TOX = 6E-008 NSUB = 1E+016 KP = 10.4 KAPPA = 30.49 VTO = -2.063 
.MODEL DCGD D CJO = 1.881E-010 VJ = 0.6541 M = 0.3655 
.MODEL DSUB D IS = 2.224E-010 N = 1.277 RS = 0.01338 
+ BV = 50 CJO = 1.189E-010 VJ = 0.7738 M = 0.6069 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP6110SSD Spice Model v1.0 Last Revised 2018/2/1


*---------- DMP6110SSS Spice Model ----------
.SUBCKT DMP6110SSS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.04464 
RS 30 3 0.001 
RG 20 2 13 
CGS 2 3 1E-009 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 6.5E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 
+ TOX = 6E-008 NSUB = 1E+016 KP = 10.4 KAPPA = 30.49 VTO = -2.063 
.MODEL DCGD D CJO = 1.881E-010 VJ = 0.6541 M = 0.3655 
.MODEL DSUB D IS = 2.224E-010 N = 1.277 RS = 0.01338 
+ BV = 50 CJO = 1.189E-010 VJ = 0.7738 M = 0.6069 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP6110SSS Spice Model v1.0 Last Revised 2018/2/1


*---------- DMP6185SK3 Spice Model ----------
.SUBCKT DMP6185SK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.03231 
RS 30 3 0.001 
RG 20 2 16.84 
CGS 2 3 7.103E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 6.5E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 30.52 KAPPA = 19.32 VTO = -0.9885 
.MODEL DCGD D CJO = 2.071E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 1.567E-009 N = 1.266 RS = 0.05804 BV = 25 CJO = 3.071E-011 VJ = 0.8 M = 0.6 TT=1.1E-08
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMP6185SK3 Spice Model v1.0M Last Revised 2018/2/1


*---------- DMP6250SE Spice Model ----------
.SUBCKT DMP6250SE 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 
RD 10 1 0.1006 
RS 30 3 0.001 
RG 20 2 13.07 
CGS 2 3 5.928E-010 
EGD 12 30 2 1 1 
VFB 14 30 0 
FFB 2 1 VFB 1 
CGD 13 14 2.5E-010 
R1 13 30 1 
D1 13 12 DLIM 
DDG 14 15 DCGD 
R2 12 15 1 
D2 30 15 DLIM 
DSD 10 3 DSUB 
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 
+ TOX = 6E-008 NSUB = 1E+016 KP = 6.038 KAPPA = 19.32 VTO = -2.241 
.MODEL DCGD D CJO = 8.101E-011 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 4.484E-010 N = 1.368 RS = 0.02186 BV = 60 CJO = 7.164E-011 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS

*Diodes DMP6250SE Spice Model v1.0 Last Revised 2015/12/03


*---------- DMS3016SFG Spice Model ----------
.SUBCKT DMS3016SFG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.007253 
RS 30 3 0.001 
RG 20 2 2.68 
CGS 2 3 1.769E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 1.666E-009 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
D3 3 10  DS 
D4 3 10  DL 
D5 3 16  DR 
D6 10 16  DB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 4.791E+005  ETA = 4.441E-017  VTO = 1.856 
+ TOX = 6E-008  NSUB = 3.989E+016  KP = 84.87  KAPPA = 100  U0 = 154.9 
.MODEL DCGD D  CJO = 7.729E-010  VJ = 0.06542  M = 0.3396 
.MODEL DLIM D  IS = 4.441E-010 
.MODEL DS D  IS = 7.339E-010  N = 1.331  RS = 0.0311 
.MODEL DL D  IS = 8.12E-006  N = 1.142  RS = 0.03216  VJ = 0.188  CJO = 2.828E-010  M = 0.4555  TT = 1.595E-008 
.MODEL DR D  IS = 1E-006  N = 1.178 
.MODEL DB D  IS = 1E-011  N = 1 
.ENDS
*Diodes DMS3016SFG Spice Model v1.0 Last Revised 2010/11/10


*---------- DMS3016SSSA Spice Model ----------
.SUBCKT DMS3016SSSA 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.007253 
RS 30 3 0.001 
RG 20 2 2.68 
CGS 2 3 1.769E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 1.666E-009 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
D3 3 10  DS 
D4 3 10  DL 
D5 3 16  DR 
D6 10 16  DB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 4.791E+005  ETA = 4.441E-017  VTO = 1.856 
+ TOX = 6E-008  NSUB = 3.989E+016  KP = 84.87  KAPPA = 100  U0 = 154.9 
.MODEL DCGD D  CJO = 7.729E-010  VJ = 0.06542  M = 0.3396 
.MODEL DLIM D  IS = 4.441E-010 
.MODEL DS D  IS = 7.339E-010  N = 1.331  RS = 0.0311 
.MODEL DL D  IS = 8.12E-006  N = 1.142  RS = 0.03216  VJ = 0.188  CJO = 2.828E-010  M = 0.4555  TT = 1.595E-008 
.MODEL DR D  IS = 1E-006  N = 1.178 
.MODEL DB D  IS = 1E-011  N = 1 
.ENDS
*Diodes DMS3016SSSA Spice Model v1.0 Last Revised 2010/11/10


*---------- DMT6004SPS Spice Model ----------
.SUBCKT DMT6004SPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001226 
RS 30 3 1E-008 
RG 20 2 0.66 
CGS 2 3 4.957E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 3.8E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.661 
+ TOX = 6E-008 NSUB = 1E+016 KP = 76.21 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 1.182E-009 VJ = 1 M = 0.6256 
.MODEL DSUB D IS = 5.527E-010 N = 1.203 RS = 0.002268 BV = 64 CJO = 2.894E-009 VJ = 1 M = 0.2266 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT6004SPS  Spice Model v1.0M Last Revised 2018/2/1


*---------- DMT6010LFG Spice Model ----------
.SUBCKT DMT6010LFG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.003535 
RS 30 3 0.001 
RG 20 2 0.6 
CGS 2 3 2.137E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.6E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.01616 VTO = 2.226 
+ TOX = 6E-008 NSUB = 1E+016 KP = 85.27 U0 = 400 KAPPA = 38.28 
.MODEL DCGD D CJO = 7.629E-010 VJ = 2.052 M = 1.442 
.MODEL DSUB D IS = 3.784E-010 N = 1.165 RS = 0.004441 
+ BV = 65 CJO = 1.489E-009 VJ = 2.873 M = 0.3016 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMNT6010LFG Spice Model v1.0 Last Revised 2018/2/1


*---------- DMT6010LPS Spice Model ----------
.SUBCKT DMT6010LPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.003535 
RS 30 3 0.001 
RG 20 2 0.6 
CGS 2 3 2.137E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.6E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.01616 VTO = 2.226 
+ TOX = 6E-008 NSUB = 1E+016 KP = 85.27 U0 = 400 KAPPA = 38.28 
.MODEL DCGD D CJO = 7.629E-010 VJ = 2.052 M = 1.442 
.MODEL DSUB D IS = 3.784E-010 N = 1.165 RS = 0.004441 
+ BV = 65 CJO = 1.489E-009 VJ = 2.873 M = 0.3016 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMNT6010LPS Spice Model v1.0 Last Revised 2018/2/1


*---------- DMT8012LFG Spice Model ----------
.SUBCKT DMT8012LFG 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.008517 
RS 30 3 0.001 
RG 20 2 0.44 
CGS 2 3 2.128E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.2E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.597 
+ TOX = 6E-008 NSUB = 1E+016 KP = 56.79 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 8.921E-010 VJ = 0.7739 M = 0.8 
.MODEL DSUB D IS = 2.461E-010 N = 1.229 RS = 0.001885 BV = 89 CJO = 1.11E-009 VJ = 0.8 M = 0.6392 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT8012LFG Spice Model v1.0M Last Revised 2018/2/1


*---------- DMT8012LK3 Spice Model ----------
.SUBCKT DMT8012LK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.008517 
RS 30 3 0.001 
RG 20 2 0.44 
CGS 2 3 2.128E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.2E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.597 
+ TOX = 6E-008 NSUB = 1E+016 KP = 56.79 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 8.921E-010 VJ = 0.7739 M = 0.8 
.MODEL DSUB D IS = 2.461E-010 N = 1.229 RS = 0.001885 BV = 89 CJO = 1.11E-009 VJ = 0.8 M = 0.6392 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT8012LK3 Spice Model v1.0M Last Revised 2018/2/1


*---------- DMT8012LPS Spice Model ----------
.SUBCKT DMT8012LPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.008517 
RS 30 3 0.001 
RG 20 2 0.44 
CGS 2 3 2.128E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.2E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.597 
+ TOX = 6E-008 NSUB = 1E+016 KP = 56.79 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 8.921E-010 VJ = 0.7739 M = 0.8 
.MODEL DSUB D IS = 2.461E-010 N = 1.229 RS = 0.001885 BV = 89 CJO = 1.11E-009 VJ = 0.8 M = 0.6392 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT8012LPS Spice Model v1.0M Last Revised 2018/2/1


*---------- DMT10H005SCT Spice Model ----------
.SUBCKT DMT10H005SCT 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.002568 
RS 30 3 0.001 
RG 20 2 0.41 
CGS 2 3 8.598E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.6E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.346 
+ TOX = 6E-008 NSUB = 1E+016 KP = 244.5 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 9.719E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.45E-011 N = 1.089 RS = 0.0009224 BV = 107 CJO = 3.5E-009 VJ = 0.8 M = 0.6 TT=3.5E-08
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMT10H005SCT Spice Model v1.0 Last Revised 2017/5/12


*---------- DMTH3004LK3Q Spice Model ----------
.SUBCKT DMTH3004LK3Q 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001 
RS 30 3 0.001 
RG 20 2 1 
CGS 2 3 2.049E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.8E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.164 
+ TOX = 6E-008 NSUB = 1E+016 KP = 135.6 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 9.486E-010 VJ = 2.289 M = 0.7048 
.MODEL DSUB D IS = 2.321E-010 N = 1.181 RS = 0.0003474 BV = 30 CJO = 1.937E-009 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH3004LK3Q Spice Model v1.0 Last Revised 2018/2/1


*---------- DMTH3004LPSQ Spice Model ----------
.SUBCKT DMTH3004LPSQ 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001 
RS 30 3 0.001 
RG 20 2 1 
CGS 2 3 2.049E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.8E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.164 
+ TOX = 6E-008 NSUB = 1E+016 KP = 135.6 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 9.486E-010 VJ = 2.289 M = 0.7048 
.MODEL DSUB D IS = 2.321E-010 N = 1.181 RS = 0.0003474 BV = 30 CJO = 1.937E-009 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH3004LPSQ Spice Model v1.0 Last Revised 2018/2/1


*---------- DMTH4005SPS Spice Model ----------
.SUBCKT DMTH4005SPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 9.814E-005 
RS 30 3 0.001 
RG 20 2 0.67 
CGS 2 3 2.961E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1.3E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.117 
+ TOX = 6E-008 NSUB = 1E+016 KP = 46.39 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.053E-009 VJ = 0.8 M = 0.6001 
.MODEL DSUB D IS = 1.159E-009 N = 1.284 RS = 0.0003205 BV = 40 CJO = 1.784E-009 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH4005SPS Spice Model v1.0 Last Revised 2018/2/1


*---------- DMTH4007LK3 Spice Model ----------
.SUBCKT DMTH4007LK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.002855 
RS 30 3 0.001 
RG 20 2 0.62 
CGS 2 3 2.005E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 8E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.997 
+ TOX = 6E-008 NSUB = 1E+016 KP = 74.74 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.614E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 3.75E-010 N = 1.163 RS = 0.004456 BV = 40 CJO = 1.695E-009 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH4007LK3 Spice Model v1.0 Last Revised 2018/2/1


*---------- DMTH4007LK3Q Spice Model ----------
.SUBCKT DMTH4007LK3Q 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.002855 
RS 30 3 0.001 
RG 20 2 0.62 
CGS 2 3 2.005E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 8E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.997 
+ TOX = 6E-008 NSUB = 1E+016 KP = 74.74 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.614E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 3.75E-010 N = 1.163 RS = 0.004456 BV = 40 CJO = 1.695E-009 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH4007LK3Q Spice Model v1.0 Last Revised 2018/2/1


*---------- DMTH4007LPS Spice Model ----------
.SUBCKT DMTH4007LPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.002855 
RS 30 3 0.001 
RG 20 2 0.62 
CGS 2 3 2.005E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 8E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.997 
+ TOX = 6E-008 NSUB = 1E+016 KP = 74.74 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.614E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 3.75E-010 N = 1.163 RS = 0.004456 BV = 40 CJO = 1.695E-009 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH4007LPS Spice Model v1.0 Last Revised 2018/2/1


*---------- DMTH4007SPD Spice Model ----------
.SUBCKT DMTH4007SPD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.002855 
RS 30 3 0.001 
RG 20 2 0.62 
CGS 2 3 2.005E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 8E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.997 
+ TOX = 6E-008 NSUB = 1E+016 KP = 74.74 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.614E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 3.75E-010 N = 1.163 RS = 0.004456 BV = 40 CJO = 1.695E-009 VJ = 0.8 M = 0.6 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH4007SPD Spice Model v1.0 Last Revised 2018/2/1


*---------- DMTH6009LK3Q Spice Model ----------
.SUBCKT DMTH6009LK3Q 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.006099 
RS 30 3 1E-008 
RG 20 2 1.71 
CGS 2 3 2.016E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 1E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.086 
+ TOX = 6E-008 NSUB = 1E+016 KP = 136.4 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 4.367E-010 VJ = 1 M = 0.5797 
.MODEL DSUB D IS = 2.239E-010 N = 1.183 RS = 0.005972 BV = 67 CJO = 8.953E-010 VJ = 1 M = 0.201 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH6009LK3Q Spice Model v1.0 Last Revised 2018/2/1


*---------- DMTH6010SK3 Spice Model ----------
.SUBCKT DMTH6010SK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001 
RS 30 3 0.001 
RG 20 2 0.39 
CGS 2 3 2.821E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 7E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.126 
+ TOX = 6E-008 NSUB = 1E+016 KP = 42.75 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 5.661E-010 VJ = 0.8 M = 0.7959 
.MODEL DSUB D IS = 2.263E-010 N = 1.18 RS = 0.007091 BV = 67 CJO = 2E-009 VJ = 0.8 M = 0.6 TT = 1.7E-008 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH6010SK3 Spice Model v1.0M Last Revised 2018/2/1


*---------- DMTH6016LSD Spice Model ----------
.SUBCKT DMTH6016LSD 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.006728 
RS 30 3 0.001 
RG 20 2 1.35 
CGS 2 3 8.475E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 6E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.61 
+ TOX = 6E-008 NSUB = 1E+016 KP = 37.72 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 3.945E-010 VJ = 0.8 M = 0.6507 
.MODEL DSUB D IS = 2.448E-010 N = 1.248 RS = 0.006471 BV = 60 CJO = 5.274E-010 VJ = 0.8 M = 0.6 TT=2.2E-010
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH6016LSD Spice Model v1.0 Last Revised 2018/2/1


*---------- DMTH8012LK3 Spice Model ----------
.SUBCKT DMTH8012LK3 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.01093 
RS 30 3 0.001 
RG 20 2 0.68 
CGS 2 3 2.125E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 1E-009 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8E+005  ETA = 0.001  VTO = 2.22 
+ TOX = 6E-008  NSUB = 1E+016  KP = 83.45  U0 = 400  KAPPA = 4.441E-010 
.MODEL DCGD D  CJO = 2.852E-010  VJ = 0.9  M = 0.5564 
.MODEL DSUB D  IS = 2.326E-010  N = 1.19  RS = 0.00327  BV = 90  CJO = 1.422E-009  VJ = 0.8  M = 0.3738 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMTH8012LK3  Spice Model v1.0 Last Revised 2018/2/1


*---------- DMTH8012LPS Spice Model ----------
.SUBCKT DMTH8012LPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3  NMOS  L = 1E-006  W = 1E-006 
RD 10 1 0.01093 
RS 30 3 0.001 
RG 20 2 0.68 
CGS 2 3 2.125E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1  VFB 1 
CGD 13 14 1E-009 
R1 13 0 1 
D1 12 13  DLIM 
DDG 15 14  DCGD 
R2 12 15 1 
D2 15 0  DLIM 
DSD 3 10  DSUB 
.MODEL NMOS NMOS  LEVEL = 3  VMAX = 8E+005  ETA = 0.001  VTO = 2.22 
+ TOX = 6E-008  NSUB = 1E+016  KP = 83.45  U0 = 400  KAPPA = 4.441E-010 
.MODEL DCGD D  CJO = 2.852E-010  VJ = 0.9  M = 0.5564 
.MODEL DSUB D  IS = 2.326E-010  N = 1.19  RS = 0.00327  BV = 90  CJO = 1.422E-009  VJ = 0.8  M = 0.3738 
.MODEL DLIM D  IS = 0.0001 
.ENDS
*Diodes DMTH8012LPS  Spice Model v1.0 Last Revised 2018/2/1


*---------- DMN6069SE Spice Model ----------
.SUBCKT DMN6069SE 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.03539 
RS 30 3 1E-008 
RG 20 2 2.16 
CGS 2 3 7.47E-010 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 5.1E-010 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.641 
+ TOX = 6E-008 NSUB = 1E+016 KP = 36.47 U0 = 400 KAPPA = 4.441E-010 
.MODEL DCGD D CJO = 2.225E-010 VJ = 0.3984 M = 0.4935 
.MODEL DSUB D IS = 2.365E-010 N = 1.257 RS = 0.006622 BV = 72 CJO = 2.225E-010 VJ = 0.1191 M = 0.564 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMN6069SE  Spice Model v1.0 Last Revised 2018/2/02


*---------- DMTH8003SPS Spice Model ----------
.SUBCKT DMTH8003SPS 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.001913 
RS 30 3 0.001 
RG 20 2 0.85 
CGS 2 3 9.031E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 4E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.789 
+ TOX = 6E-008 NSUB = 1E+016 KP = 487.1 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 1.6E-009 VJ = 0.8 M = 0.7845 
.MODEL DSUB D IS = 2.221E-010 N = 1.178 RS = 4.441E-010 BV = 90 CJO = 3.5E-009 VJ = 0.8 M = 0.6 TT = 2.8E-008 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH8003SPS Spice Model v1.0 Last Revised 2017/10/16



*---------- DMTH10H010SCT Spice Model ----------
.SUBCKT DMTH10H010SCT 10 20 30 
*     TERMINALS:  D  G  S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 
RD 10 1 0.00344 
RS 30 3 0.001 
RG 20 2 1.2 
CGS 2 3 3.2E-009 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.3E-009 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 3.295 
+ TOX = 6E-008 NSUB = 1E+016 KP = 91.79 U0 = 400 KAPPA = 10 
.MODEL DCGD D CJO = 3.556E-010 VJ = 0.8 M = 0.6 
.MODEL DSUB D IS = 2.234E-010 N = 1.212 RS = 4.441E-010 BV = 108 CJO = 2E-009 VJ = 0.8 M = 0.6 TT = 3.5E-008 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes DMTH10H010SCT Spice Model v1.0 Last Revised 2018/1/3
